Preparation method of gas switching device for semiconductor equipment

Abstract

The invention provides a preparation method of a gas switching device for semiconductor equipment, which comprises the following steps: S1, processing and manufacturing a rotary main body, forming a gas flow channel and a plurality of connecting holes communicated with the gas flow channel in the rotary main body, and milling along the inner cavity wall of the connecting hole to form a positioning boss; s2, a plurality of connecting pipelines are provided and bent to be matched with the rotary body, then the bent connecting pipelines and the positioning boss are welded, and an assembly workpiece is obtained; and S3, then finish machining is conducted on the assembled workpiece, and abrasive flow polishing treatment is conducted on the inner surface of the gas flow channel. Structural defects in the gas switching device can be effectively eliminated, so that the gas switching device is flat and smooth, and gas residues are reduced.

Description

Technical Field

[0001] The invention belongs to the technical field of semiconductor equipment manufacturing, and relates to a method for preparing a gas switching device for semiconductor equipment. Background Art

[0002] The gas collection device in the semiconductor equipment usually uses a gas transfer component to collect the waste gas, and treats the waste gas by burning or neutralizing it. There are some inert gases and corrosive gases in the collected gas, which are easy to remain inside the device during the conversion process. If the inside of the gas transfer component is rough, or there are processing or welding defects, the gas residue will be aggravated, causing corrosion inside the structure, thereby causing other parts connected to the structure to be contaminated.

[0003] Existing gas transfer devices are prone to defects such as pores, gaps, steps, etc. due to unreasonable structural design, material selection or processing technology, which hinders the flow of gas and causes gas to remain inside the components, causing corrosion of the device.

[0004] Therefore, how to reduce the surface defects of the gas transition components during processing and thus avoid gas corrosion is very important for the normal operation of the gas collection device. Summary of the invention

[0005] In view of the shortcomings of the prior art, the purpose of the present invention is to provide a method for preparing a gas switching device for semiconductor equipment, which can effectively eliminate the structural defects inside the gas switching device, make its inner surface smooth, reduce gas residue, avoid internal corrosion or pollution, and thus increase the service life of the product.

[0006] The present invention provides a method for preparing a gas switching device for semiconductor equipment, the method comprising:

[0007] S1: machining and manufacturing a rotating body, forming a gas flow channel and a plurality of connecting holes connected to the gas flow channel on the rotating body, and forming a positioning boss by milling along the inner cavity wall of the connecting hole;

[0008] S2: providing a plurality of connecting pipes, and bending them respectively to match the rotating body, and then welding the bent connecting pipes to the positioning bosses to obtain an assembled workpiece;

[0009] S3: The assembled workpiece is then fine-machined, and the inner surface of the gas flow channel is subjected to abrasive flow polishing.

[0010] The preparation method provided by the present invention can avoid defects such as steps, bubbles or gaps inside the gas switching device, improve the overall structure, make the inner and outer surfaces of the gas switching device smoother, effectively prevent gas flow obstruction, reduce gas residue, alleviate corrosion or contamination problems inside the device, and ensure the service life of the device.

[0011] As a preferred technical solution of the present invention, in step S1, the material of the rotating body includes any one of titanium, titanium alloy, stainless steel, aluminum or aluminum alloy, or a combination of at least two of them.

[0012] Preferably, the rotating body is made of titanium or titanium alloy.

[0013] Preferably, the rotating body has a cubic structure.

[0014] The rotary body provided by the present invention has a gas flow channel and a connecting hole, the gas flow channel allows the gas to flow smoothly, and the connecting hole is used to connect the pipeline and communicate with the inlet and outlet gas pipelines through the connecting pipeline. The rotary body is preferably made of titanium or titanium alloy, which has high corrosion resistance, alleviates the problem of pollution and corrosion of the interior thereof by inert gas or corrosive gas, and increases the service life.

[0015] As a preferred technical solution of the present invention, in step S1, during the milling process of the positioning boss, a ball cutter is used to level the welding surface of the positioning boss.

[0016] Preferably, the ball head radius of the ball cutter is 0.15-0.3 mm, for example, it can be 0.15 mm, 0.16 mm, 0.18 mm, 0.2 mm, 0.22 mm, 0.24 mm, 0.25 mm, 0.26 mm, 0.28 mm or 0.3 mm, but it is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0017] The present invention processes a positioning boss in the connection hole of the rotating body, which can avoid the connection pipeline being directly welded on the rotating body to cause internal step defects, ensure the flatness of the rotating body, and enable unobstructed gas flow.

[0018] It should be noted that the welding surface mentioned in the present invention refers to the surface where the positioning boss and the connecting pipe are connected, which ensures that the welding surface is flat and improves the welding qualification rate.

[0019] As a preferred technical solution of the present invention, in step S1, the width of the positioning boss is 0.02 to 0.06 mm, for example, it can be 0.02 mm, 0.025 mm, 0.03 mm, 0.035 mm, 0.04 mm, 0.045 mm, 0.05 mm, 0.055 mm or 0.06 mm, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0020] Preferably, the maximum linear length of the positioning boss from the outer surface of the rotating body is 0.3-0.8 mm, for example, it can be 0.3 mm, 0.35 mm, 0.4 mm, 0.5 mm, 0.6 mm, 0.7 mm or 0.8 mm, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0021] As a preferred technical solution of the present invention, in step S2, the connecting pipeline is a titanium tube.

[0022] The connecting pipeline of the present invention adopts a titanium tube, which has high corrosion resistance and is conducive to extending its service life.

[0023] Preferably, the inner diameter of the connecting pipe is 6 to 15 mm, for example, it can be 6 mm, 7 mm, 8 mm, 9 mm, 10 mm, 11 mm, 12 mm, 13 mm, 14 mm or 15 mm, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0024] Preferably, the thickness of the connecting pipe is 0.5-2 mm, for example, it can be 0.5 mm, 0.6 mm, 0.8 mm, 1 mm, 1.2 mm, 1.4 mm, 1.5 mm, 1.6 mm, 1.8 mm or 2 mm, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0025] As a preferred technical solution of the present invention, in step S2, the welding process is argon arc welding or orbital welding.

[0026] Preferably, when the welding process is argon arc welding, the welding current is 130-160A, for example, it can be 130A, 132A, 135A, 138A, 140A, 145A, 148A, 150A, 152A, 155A, 156A, 158A or 160A, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0027] When the welding process is argon arc welding, the shielding gas flow rate is 14 to 20 L / min, for example, it can be 14 L / min, 14.5 L / min, 15 L / min, 15.5 L / min, 16 L / min, 16.5 L / min, 17.5 L / min, 18 L / min, 19 L / min or 20 L / min, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0028] Preferably, when the welding process is orbital welding, the welding current is 130-160A, for example, it can be 130A, 132A, 135A, 138A, 140A, 145A, 148A, 150A, 152A, 155A, 156A, 158A or 160A, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0029] When the welding process is orbital welding, the welding speed is 160-210 mm / min, for example, it can be 160 mm / min, 165 mm / min, 170 mm / min, 175 mm / min, 180 mm / min, 185 mm / min, 190 mm / min, 195 mm / min, 200 mm / min or 210 mm / min, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0030] As a preferred technical solution of the present invention, in step S3, the finishing method includes: using a CNC machine tool to finish turning the outer surface of the rotating body, so that the surface of the rotating body is flat and smooth.

[0031] Preferably, after finishing the fine machining, the surface roughness Ra of the rotating body is ≤0.4 μm, and the flatness is ≤0.1 mm.

[0032] Preferably, the spindle speed for the finishing is 120-240 r / min, for example, it can be 120 r / min, 130 r / min, 140 r / min, 150 r / min, 160 r / min, 170 r / min, 180 r / min, 200 r / min, 210 r / min, 220 r / min, 230 r / min or 240 r / min, but it is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0033] The feed amount for the finishing process is 0.008-0.015 mm, for example, it can be 0.008 mm, 0.009 mm, 0.01 mm, 0.011 mm, 0.012 mm, 0.013 mm, 0.014 mm or 0.015 mm, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0034] As a preferred technical solution of the present invention, in step S3, the abrasive particles used in the abrasive flow polishing process include any one of silicon dioxide, silicon carbide or aluminum oxide, or a combination of at least two of them.

[0035] Preferably, the particle size of the abrasive is 20 to 200 nm, for example, it can be 20 nm, 25 nm, 30 nm, 50 nm, 80 nm, 100 nm, 110 nm, 120 nm, 130 nm, 140 nm, 150 nm, 160 nm, 180 nm, or 200 nm, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0036] Preferably, the air flow pressure of the abrasive flow polishing treatment is 0.1-0.5 MPa, for example, it can be 0.1 MPa, 0.12 MPa, 0.15 MPa, 0.2 MPa, 0.23 MPa, 0.25 MPa, 0.28 MPa, 0.3 MPa, 0.35 MPa, 0.38 MPa, 0.4 MPa, 0.45 MPa, 0.48 MPa or 0.5 MPa, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0037] Preferably, after the abrasive flow polishing process is completed, the roughness Ra of the inner cavity wall of the gas flow channel is ≤ 0.3 μm.

[0038] As a preferred technical solution of the present invention, the preparation method further comprises: after the abrasive flow polishing treatment is completed, electrolytic polishing treatment is performed on the outer surface of the assembled workpiece.

[0039] Preferably, the electrolytic polishing treatment method includes: placing the assembly workpiece in an electrolytic tank containing an electrolytic polishing liquid, using the assembly workpiece as an anode and a lead block as a cathode, applying voltage to achieve electrolytic polishing, and then taking out the assembly workpiece, and cleaning and drying it in sequence.

[0040] Preferably, after the electrolytic polishing treatment, the roughness of the surface of the assembly workpiece is Ra≤0.6 μm.

[0041] As a preferred technical solution of the present invention, the temperature of the electrolytic polishing treatment is 35-60°C, for example, it can be 35°C, 36°C, 38°C, 40°C, 43°C, 45°C, 50°C, 55°C or 60°C, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0042] Preferably, the voltage applied in the electrolytic polishing process is 5 to 10 V, for example, it can be 5 V, 5.5 V, 6 V, 6.5 V, 7 V, 7.5 V, 8 V, 8.5 V, 9 V, 9.5 V or 10 V, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0043] Preferably, the electrolytic polishing treatment time is 150 to 220 s, for example, it can be 150 s, 155 s, 160 s, 170 s, 180 s, 190 s, 200 s, 210 s, 215 s or 220 s, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0044] Preferably, the cleaning method is ultrasonic cleaning.

[0045] Preferably, the ultrasonic cleaning time is 8 to 15 minutes, for example, it can be 8 minutes, 9 minutes, 10 minutes, 11 minutes, 12 minutes, 13 minutes, 14 minutes or 15 minutes, but it is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0046] Preferably, the temperature of the ultrasonic cleaning is 60-80°C, for example, it can be 60°C, 62°C, 65°C, 68°C, 70°C, 72°C, 75°C, 78°C or 80°C, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0047] Preferably, the drying method is vacuum drying.

[0048] In order to help those skilled in the art better understand the overall technical solution and working process of the present invention, the present invention exemplarily provides the following two specific solutions for the preparation method of the gas transfer device for semiconductor equipment:

[0049] Scheme 1: The preparation method specifically comprises the following steps:

[0050] (1) machining and manufacturing a rotating body, forming a gas flow channel and a plurality of connection holes connected to the gas flow channel on the rotating body, and milling along the inner cavity wall of the connection hole to form a positioning boss, and flattening the welding surface of the positioning boss with a ball cutter;

[0051] (2) providing a plurality of connecting pipes, and bending them respectively to match the rotating body, and then performing argon arc welding on the bent connecting pipes and the positioning bosses to obtain an assembled workpiece;

[0052] (3) Then, the outer surface of the rotating body is finely turned by a numerically controlled machine tool, so that the surface of the rotating body is flat and smooth, and the roughness Ra of the surface of the rotating body is ≤0.4 μm, and the flatness is ≤0.1 mm;

[0053] (4) performing abrasive flow polishing on the inner surface of the gas flow channel so that the roughness Ra of the inner cavity wall of the gas flow channel is ≤0.3 μm;

[0054] (5) placing the assembled workpiece in an electrolytic cell containing an electrolytic polishing solution, using the assembled workpiece as an anode and a lead block as a cathode, applying a voltage for electrolytic polishing, so that the roughness Ra of the surface of the assembled workpiece is ≤0.6 μm;

[0055] (6) The assembled workpiece is then taken out and ultrasonically cleaned and dried in sequence.

[0056] Scheme 2: The preparation method specifically comprises the following steps:

[0057] (1) machining and manufacturing a rotating body, forming a gas flow channel and a plurality of connection holes connected to the gas flow channel on the rotating body, and milling along the inner cavity wall of the connection hole to form a positioning boss, and flattening the welding surface of the positioning boss with a ball cutter;

[0058] (2) providing a plurality of connecting pipes, and bending them respectively to match the rotating body, and then performing orbital welding on the bent connecting pipes and the positioning bosses to obtain an assembled workpiece;

[0059] (3) Then, the outer surface of the rotating body is finely turned by a numerically controlled machine tool, so that the surface of the rotating body is flat and smooth, and the roughness Ra of the surface of the rotating body is ≤0.4 μm, and the flatness is ≤0.1 mm;

[0060] (4) performing abrasive flow polishing on the inner surface of the gas flow channel so that the roughness Ra of the inner cavity wall of the gas flow channel is ≤0.3 μm;

[0061] (5) placing the assembled workpiece in an electrolytic cell containing an electrolytic polishing solution, using the assembled workpiece as an anode and a lead block as a cathode, applying a voltage for electrolytic polishing, so that the roughness Ra of the surface of the assembled workpiece is ≤0.6 μm;

[0062] (6) The assembled workpiece is then taken out and ultrasonically cleaned and dried in sequence.

[0063] The numerical range described in the present invention not only includes the point values ​​listed above, but also includes any point values ​​between the above numerical ranges that are not listed. Due to space limitations and for the sake of simplicity, the present invention no longer exhaustively lists the specific point values ​​included in the range.

[0064] Compared with the prior art, the present invention has the following beneficial effects:

[0065] The present invention provides a method for preparing a gas switching device for semiconductor equipment, which can avoid defects such as steps, bubbles or gaps inside the gas switching device, improve the welding qualification rate, improve the overall structure, make the inner and outer surfaces of the gas switching device smoother, effectively prevent gas circulation from being obstructed, and ensure the service life of the device. BRIEF DESCRIPTION OF THE DRAWINGS

[0066] Figure 1 A schematic structural diagram of a rotating body provided for a specific embodiment of the present invention.

[0067] Figure 2 A schematic diagram of the structure of the connecting pipeline provided for a specific embodiment of the present invention.

[0068] Among them, 1 is a rotating body; 11 is a gas flow channel; 12 is a connecting hole; 13 is a positioning boss; and 2 is a connecting pipeline. DETAILED DESCRIPTION

[0069] The technical solution of the present invention is further described below with reference to the accompanying drawings and through specific implementation methods.

[0070] In a specific embodiment, the present invention provides a method for preparing a gas transfer device for semiconductor equipment, which specifically comprises the following steps:

[0071] (1) Processing and manufacturing the rotating body 1, such as Figure 1 As shown, a gas flow channel 11 and a plurality of connecting holes 12 connected to the gas flow channel 11 are formed on the rotating body 1, and a positioning boss 13 is formed by milling along the inner cavity wall of the connecting hole 12, and a ball cutter with a ball head radius of 0.15 to 0.3 mm is used to level the welding surface of the positioning boss 13.

[0072] Among them, the rotating body 1 has a cubic structure, and its material includes any one of titanium, titanium alloy, stainless steel, aluminum or aluminum alloy or a combination of at least two, preferably titanium or titanium alloy; the width of the positioning boss 13 is 0.02~0.06mm, and the maximum linear length of the positioning boss 13 from the outer surface of the rotating body 1 is 0.3~0.8mm.

[0073] (2) Figure 2As shown, a plurality of connecting pipes 2 are provided and bent respectively to match the rotating body 1, and then the bent connecting pipes 2 are argon arc welded with the positioning boss 13 to obtain an assembled workpiece.

[0074] The welding current is 130-160A, the flow rate of the shielding gas is 14-20L / min, the inner diameter of the connecting pipeline 2 is 6-15mm, and the thickness of the connecting pipeline 2 is 0.5-2mm.

[0075] (3) Then, the outer surface of the rotating body 1 is finely machined by a numerically controlled machine tool, so that the surface of the rotating body 1 is flat and smooth, and the roughness Ra of the surface of the rotating body 1 is ≤0.4 μm, and the flatness is ≤0.1 mm.

[0076] Wherein, the spindle speed of the finishing process is 120-240 r / min, and the feed amount is 0.008-0.015 mm;

[0077] (4) The inner surface of the gas flow channel 11 is subjected to abrasive flow polishing treatment, and the air flow pressure of the abrasive flow polishing treatment is 0.1-0.5 MPa, so that the roughness Ra of the inner cavity wall of the gas flow channel 11 is ≤ 0.3 μm, and the abrasive particles used include any one of silicon dioxide, silicon carbide or aluminum oxide or a combination of at least two of them, and the particle size of the abrasive particles is 20-200 nm.

[0078] (5) The assembled workpiece is placed in an electrolytic cell containing an electrolytic polishing liquid, the assembled workpiece is used as an anode, the lead block is used as a cathode, a voltage is applied, and electrolytic polishing is performed, so that the roughness of the surface of the assembled workpiece Ra is ≤ 0.6 μm.

[0079] The electrolytic polishing treatment is performed at a temperature of 35 to 60° C., an applied voltage of 5 to 10 V, and a time of 150 to 220 seconds.

[0080] (6) The assembled workpiece is then taken out and ultrasonically cleaned and dried in sequence, wherein the ultrasonic cleaning time is 8 to 15 minutes at a temperature of 60 to 80° C. The drying method is vacuum drying.

[0081] In another specific embodiment, the present invention provides a method for preparing a gas transfer device for semiconductor equipment, which specifically comprises the following steps:

[0082] (1) A rotating body 1 is manufactured and processed, a gas flow channel 11 and a plurality of connecting holes 12 connected to the gas flow channel 11 are formed on the rotating body 1, and a positioning boss 13 is formed by milling along the inner wall of the connecting hole 12, and a ball cutter with a ball head radius of 0.15 to 0.3 mm is used to level the welding surface of the positioning boss 13.

[0083] Among them, the rotating body 1 has a cubic structure, and its material includes any one of titanium, titanium alloy, stainless steel, aluminum or aluminum alloy or a combination of at least two, preferably titanium or titanium alloy; the width of the positioning boss 13 is 0.02~0.06mm, and the maximum linear length of the positioning boss 13 from the outer surface of the rotating body 1 is 0.3~0.8mm.

[0084] (2) A plurality of connecting pipes 2 are provided and bent respectively to match the rotating body 1, and then the bent connecting pipes 2 are orbitally welded to the positioning boss 13 to obtain an assembled workpiece.

[0085] The welding current is 130-160A, the welding speed is 160-210mm / min, the inner diameter of the connecting pipe 2 is 6-15mm, and the thickness of the connecting pipe 2 is 0.5-2mm.

[0086] (3) Then, the outer surface of the rotating body 1 is finely machined by a numerically controlled machine tool, so that the surface of the rotating body 1 is flat and smooth, and the roughness Ra of the surface of the rotating body 1 is ≤0.4 μm, and the flatness is ≤0.1 mm.

[0087] Wherein, the spindle speed of the finishing process is 120-240 r / min, and the feed amount is 0.008-0.015 mm;

[0088] (4) The inner surface of the gas flow channel 11 is subjected to abrasive flow polishing treatment, and the air flow pressure of the abrasive flow polishing treatment is 0.1-0.5 MPa, so that the roughness Ra of the inner cavity wall of the gas flow channel 11 is ≤ 0.3 μm, and the abrasive particles used include any one of silicon dioxide, silicon carbide or aluminum oxide or a combination of at least two of them, and the particle size of the abrasive particles is 20-200 nm.

[0089] (5) The assembled workpiece is placed in an electrolytic cell containing an electrolytic polishing liquid, the assembled workpiece is used as an anode, the lead block is used as a cathode, a voltage is applied, and electrolytic polishing is performed, so that the roughness of the surface of the assembled workpiece Ra is ≤ 0.6 μm.

[0090] The electrolytic polishing treatment is performed at a temperature of 35 to 60° C., an applied voltage of 5 to 10 V, and a time of 150 to 220 seconds.

[0091] (6) The assembled workpiece is then taken out and ultrasonically cleaned and dried in sequence, wherein the ultrasonic cleaning time is 8 to 15 minutes at a temperature of 60 to 80° C. The drying method is vacuum drying.

[0092] Example 1

[0093] This embodiment provides a method for preparing a gas transfer device for semiconductor equipment, which specifically includes the following steps:

[0094] (1) A titanium rotating body with a cubic structure is manufactured, a gas flow channel and a connecting hole are formed on the rotating body, and a positioning boss with a width of 0.04 mm is formed by milling along the inner wall of the connecting hole. A ball cutter with a ball head radius of 0.2 mm is used to level the welding surface of the positioning boss, and the maximum linear length of the positioning boss from the outer surface of the rotating body is 0.5 mm;

[0095] (2) providing a plurality of titanium tubes as connecting pipes, each having an inner diameter of 10 mm and a thickness of 1 mm, and bending them respectively to match the rotating body, and then performing argon arc welding on the bent connecting pipes and the positioning bosses to obtain an assembled workpiece, wherein the welding current is 140 A and the shielding gas flow rate is 16 L / min;

[0096] (3) Then, the outer surface of the rotating body is finely turned by a CNC machine tool, so that the surface of the rotating body is flat and smooth, and the roughness Ra of the surface of the rotating body is ≤ 0.4 μm, and the flatness is ≤ 0.1 mm, wherein the spindle speed of the fine machining is 200 r / min, and the feed amount is 0.01 mm;

[0097] (4) performing abrasive flow polishing on the inner surface of the gas flow channel, wherein the air flow pressure of the abrasive flow polishing is 0.3 MPa, so that the roughness Ra of the inner cavity wall of the gas flow channel is ≤ 0.3 μm, and the abrasive particles are silicon dioxide with a particle size of 50 nm;

[0098] (5) placing the assembled workpiece in an electrolytic cell containing an electrolytic polishing solution, with the assembled workpiece as the anode and the lead block as the cathode, applying an 8V voltage for 200s at a temperature of 45°C, so that the surface roughness of the assembled workpiece Ra ≤ 0.6μm;

[0099] (6) The assembled workpiece is then taken out and ultrasonically cleaned and vacuum dried in sequence. The ultrasonic cleaning time is 10 min at a temperature of 70° C.

[0100] Example 2

[0101] This embodiment provides a method for preparing a gas transfer device for semiconductor equipment, which specifically includes the following steps:

[0102] (1) A titanium rotating body with a cubic structure is manufactured, a gas flow channel and a connecting hole are formed on the rotating body, and a positioning boss with a width of 0.02 mm is formed by milling along the inner wall of the connecting hole. A ball cutter with a ball head radius of 0.15 mm is used to level the welding surface of the positioning boss, and the maximum linear length of the positioning boss from the outer surface of the rotating body is 0.8 mm;

[0103] (2) providing a plurality of titanium tubes as connecting pipes, with an inner diameter of 8 mm and a thickness of 0.5 mm, and bending them respectively to match the rotating body, and then performing argon arc welding on the bent connecting pipes and the positioning bosses to obtain an assembled workpiece, wherein the welding current is 150 A and the shielding gas flow rate is 20 L / min;

[0104] (3) Then, the outer surface of the rotating body is finely turned by a CNC machine tool, so that the surface of the rotating body is flat and smooth, and the roughness Ra of the surface of the rotating body is ≤ 0.4 μm, and the flatness is ≤ 0.1 mm, wherein the spindle speed of the fine machining is 180 r / min, and the feed amount is 0.008 mm;

[0105] (4) performing abrasive flow polishing on the inner surface of the gas flow channel, wherein the air flow pressure of the abrasive flow polishing is 0.2 MPa, so that the roughness Ra of the inner cavity wall of the gas flow channel is ≤ 0.3 μm, and the abrasive particles are aluminum oxide with a particle size of 100 nm;

[0106] (5) placing the assembled workpiece in an electrolytic cell containing an electrolytic polishing solution, with the assembled workpiece as the anode and the lead block as the cathode, applying a voltage of 10 V for 180 seconds at a temperature of 50° C., so that the surface roughness of the assembled workpiece Ra ≤ 0.6 μm;

[0107] (6) The assembled workpiece is then taken out and ultrasonically cleaned and vacuum dried in sequence. The ultrasonic cleaning time is 8 minutes and the temperature is 60°C.

[0108] Example 3

[0109] This embodiment provides a method for preparing a gas transfer device for semiconductor equipment, which specifically includes the following steps:

[0110] (1) A cubic aluminum alloy rotating body is manufactured, a gas flow channel and a plurality of connection holes are formed on the rotating body, and a positioning boss with a width of 0.06 mm is formed by milling along the inner wall of the connection hole. A ball cutter with a ball head radius of 0.15 mm is used to level the welding surface of the positioning boss, and the maximum linear length of the positioning boss from the outer surface of the rotating body is 0.3 mm;

[0111] (2) providing a plurality of titanium tubes as connecting pipes, with an inner diameter of 15 mm and a thickness of 2 mm, and bending them respectively to match the rotating body, and then performing argon arc welding on the bent connecting pipes and the positioning bosses to obtain an assembled workpiece, wherein the welding current is 160 A and the shielding gas flow rate is 15 L / min;

[0112] (3) Then, the outer surface of the rotating body is finely machined by a CNC machine tool, so that the surface of the rotating body is flat and smooth, and the roughness Ra of the surface of the rotating body is ≤ 0.4 μm, and the flatness is ≤ 0.1 mm, wherein the spindle speed of the fine machining is 220 r / min, and the feed amount is 0.012 mm;

[0113] (4) performing abrasive flow polishing on the inner surface of the gas flow channel, wherein the air flow pressure of the abrasive flow polishing is 0.5 MPa, so that the roughness Ra of the inner cavity wall of the gas flow channel is ≤ 0.3 μm, and the abrasive particles are silicon carbide with a particle size of 150 nm;

[0114] (5) placing the assembled workpiece in an electrolytic cell containing an electrolytic polishing solution, with the assembled workpiece as the anode and the lead block as the cathode, applying a voltage of 9 V for 220 seconds at a temperature of 60° C., so that the roughness Ra of the assembled workpiece surface is ≤0.6 μm;

[0115] (6) The assembled workpiece is then taken out and ultrasonically cleaned and vacuum dried in sequence. The ultrasonic cleaning time is 12 minutes and the temperature is 80°C.

[0116] Example 4

[0117] This embodiment provides a method for preparing a gas transfer device for semiconductor equipment, which specifically includes the following steps:

[0118] (1) A titanium rotating body with a cubic structure is manufactured, a gas flow channel and a plurality of connecting holes are formed on the rotating body, and a positioning boss with a width of 0.05 mm is formed by milling along the inner wall of the connecting hole. A ball cutter with a ball head radius of 0.25 mm is used to level the welding surface of the positioning boss, and the maximum linear length of the positioning boss from the outer surface of the rotating body is 0.4 mm;

[0119] (2) providing a plurality of titanium tubes as connecting pipes, with an inner diameter of 14 mm and a thickness of 1.8 mm, and bending them respectively to match the rotating body, and then orbitally welding the bent connecting pipes to the positioning bosses to obtain an assembled workpiece, wherein the welding current is 130 A and the welding speed is 180 mm / min;

[0120] (3) Then, the outer surface of the rotating body is finely turned by a CNC machine tool, so that the surface of the rotating body is flat and smooth, and the roughness Ra of the surface of the rotating body is ≤ 0.4 μm, and the flatness is ≤ 0.1 mm, wherein the spindle speed of the fine machining is 230 r / min, and the feed amount is 0.009 mm;

[0121] (4) performing abrasive flow polishing on the inner surface of the gas flow channel, wherein the air flow pressure of the abrasive flow polishing is 0.4 MPa, so that the roughness Ra of the inner cavity wall of the gas flow channel is ≤ 0.3 μm, and the abrasive particles are silicon dioxide with a particle size of 180 nm;

[0122] (5) placing the assembled workpiece in an electrolytic cell containing an electrolytic polishing solution, with the assembled workpiece as the anode and the lead block as the cathode, applying a voltage of 6 V for 200 s at a temperature of 55° C., so that the roughness Ra of the assembled workpiece surface is ≤ 0.6 μm;

[0123] (6) The assembled workpiece was then taken out and ultrasonically cleaned and vacuum dried in sequence. The ultrasonic cleaning time was 14 min at a temperature of 75° C.

[0124] Example 5

[0125] This embodiment provides a method for preparing a gas transfer device for semiconductor equipment, which specifically includes the following steps:

[0126] (1) A titanium alloy rotating body with a cubic structure is manufactured, a gas flow channel and a plurality of connecting holes are formed on the rotating body, and a positioning boss with a width of 0.04 mm is formed by milling along the inner wall of the connecting hole. A ball cutter with a ball head radius of 0.2 mm is used to level the welding surface of the positioning boss, and the maximum linear length of the positioning boss from the outer surface of the rotating body is 0.6 mm;

[0127] (2) providing a plurality of titanium tubes as connecting pipes, with an inner diameter of 13 mm and a thickness of 1.5 mm, and bending them respectively to match the rotating body, and then orbitally welding the bent connecting pipes to the positioning bosses to obtain an assembled workpiece, wherein the welding current is 145 A and the welding speed is 205 mm / min;

[0128] (3) Then, the outer surface of the rotating body is finely turned by a CNC machine tool, so that the surface of the rotating body is flat and smooth, and the roughness Ra of the surface of the rotating body is ≤ 0.4 μm, and the flatness is ≤ 0.1 mm, wherein the spindle speed of the fine machining is 240 r / min, and the feed amount is 0.015 mm;

[0129] (4) performing abrasive flow polishing on the inner surface of the gas flow channel, wherein the air flow pressure of the abrasive flow polishing is 0.2 MPa, so that the roughness Ra of the inner cavity wall of the gas flow channel is ≤ 0.3 μm, and the abrasive particles are silicon carbide with a particle size of 90 nm;

[0130] (5) placing the assembled workpiece in an electrolytic cell containing an electrolytic polishing solution, with the assembled workpiece as the anode and the lead block as the cathode, applying a voltage of 9 V for 190 seconds at a temperature of 45° C., so that the surface roughness of the assembled workpiece Ra is ≤ 0.6 μm;

[0131] (6) The assembled workpiece was then taken out and ultrasonically cleaned and vacuum dried in sequence. The ultrasonic cleaning time was 13 min at a temperature of 60° C.

[0132] Example 6

[0133] This embodiment provides a method for preparing a gas transfer device for semiconductor equipment, which specifically includes the following steps:

[0134] (1) A stainless steel rotating body with a cubic structure is manufactured, a gas flow channel and a plurality of connecting holes are formed on the rotating body, and a positioning boss with a width of 0.05 mm is formed by milling along the inner wall of the connecting hole. A ball cutter with a ball head radius of 0.18 mm is used to level the welding surface of the positioning boss, and the maximum linear length of the positioning boss from the outer surface of the rotating body is 0.7 mm;

[0135] (2) providing a plurality of titanium tubes as connecting pipes, with an inner diameter of 8 mm and a thickness of 0.5 mm, and bending them respectively to match the rotating body, and then orbitally welding the bent connecting pipes and the positioning bosses to obtain an assembled workpiece, wherein the welding current is 130 A and the welding speed is 160 mm / min;

[0136] (3) Then, the outer surface of the rotating body is finely turned by a CNC machine tool, so that the surface of the rotating body is flat and smooth, and the roughness Ra of the surface of the rotating body is ≤ 0.4 μm, and the flatness is ≤ 0.1 mm, wherein the spindle speed of the fine machining is 120 r / min, and the feed amount is 0.008 mm;

[0137] (4) performing abrasive flow polishing on the inner surface of the gas flow channel, wherein the air flow pressure of the abrasive flow polishing is 0.4 MPa, so that the roughness Ra of the inner cavity wall of the gas flow channel is ≤ 0.3 μm, and the abrasive particles are aluminum oxide with a particle size of 150 nm;

[0138] (5) placing the assembled workpiece in an electrolytic cell containing an electrolytic polishing solution, with the assembled workpiece as the anode and the lead block as the cathode, applying a voltage of 8 V for 160 seconds at a temperature of 40° C., so that the surface roughness of the assembled workpiece Ra is ≤ 0.6 μm;

[0139] (6) The assembled workpiece is then taken out and ultrasonically cleaned and vacuum dried in sequence. The ultrasonic cleaning time is 10 min at a temperature of 65°C.

[0140] The applicant declares that the above is only a specific implementation mode of the present invention, but the protection scope of the present invention is not limited thereto. Those skilled in the art should understand that any changes or substitutions that can be easily thought of by those skilled in the art within the technical scope disclosed by the present invention shall fall within the protection scope and disclosure scope of the present invention.

Claims

1. A method for preparing a gas transfer device for semiconductor equipment, characterized in that: The preparation method comprises: S1: machining and manufacturing a rotating body, forming a gas flow channel and a plurality of connecting holes connected to the gas flow channel on the rotating body, and forming a positioning boss by milling along the inner cavity wall of the connecting hole; S2: providing a plurality of connecting pipes, and bending them respectively to match the rotating body, and then welding the bent connecting pipes to the positioning bosses to obtain an assembled workpiece; S3: The assembled workpiece is then fine-machined, and the inner surface of the gas flow channel is subjected to abrasive flow polishing.

2. The preparation method according to claim 1, characterized in that: In step S1, the material of the rotating body includes any one of titanium, titanium alloy, stainless steel, aluminum or aluminum alloy, or a combination of at least two thereof; Preferably, the material of the rotating body is titanium or titanium alloy; Preferably, the rotating body has a cubic structure.

3. The preparation method according to claim 1 or 2, characterized in that: In step S1, during the milling process of the positioning boss, a ball cutter is used to level the welding surface of the positioning boss; Preferably, the ball head radius of the ball cutter is 0.15-0.3 mm.

4. The preparation method according to any one of claims 1 to 3, characterized in that In step S1, the width of the positioning boss is 0.02-0.06 mm; Preferably, the maximum linear length between the positioning boss and the outer surface of the rotating body is 0.3-0.8 mm.

5. The preparation method according to any one of claims 1 to 4, characterized in that: In step S2, the connecting pipeline is a titanium tube; Preferably, the inner diameter of the connecting pipeline is 6 to 15 mm; Preferably, the thickness of the connecting pipeline is 0.5-2 mm.

6. The preparation method according to any one of claims 1 to 5, characterized in that: In step S2, the welding process is argon arc welding or orbital welding; Preferably, when the welding process is argon arc welding, the welding current is 130-160A, and the flow rate of the shielding gas is 14-20L / min; Preferably, when the welding process is orbital welding, the welding current is 130-160A and the welding speed is 160-210mm / min.

7. The preparation method according to any one of claims 1 to 6, characterized in that: In step S3, the finishing method includes: using a CNC machine tool to finish turning the outer surface of the rotating body so that the surface of the rotating body is flat and smooth; Preferably, after finishing the fine machining, the roughness Ra of the surface of the rotating body is ≤0.4 μm, and the flatness is ≤0.1 mm; Preferably, the spindle speed of the finishing process is 120-240 r / min, and the feed rate is 0.008-0.015 mm.

8. The preparation method according to any one of claims 1 to 7, characterized in that: In step S3, the abrasive particles used in the abrasive flow polishing process include any one of silicon dioxide, silicon carbide or aluminum oxide, or a combination of at least two thereof; Preferably, the particle size of the abrasive particles is 20 to 200 nm; Preferably, the air flow pressure of the abrasive flow polishing process is 0.1-0.5 MPa; Preferably, after the abrasive flow polishing process is completed, the roughness Ra of the inner cavity wall of the gas flow channel is ≤ 0.3 μm.

9. The preparation method according to any one of claims 1 to 8, characterized in that: The preparation method further comprises: after the abrasive flow polishing treatment is completed, electrolytic polishing treatment is performed on the outer surface of the assembled workpiece: Preferably, the electrolytic polishing treatment comprises: placing the assembly workpiece in an electrolytic tank containing an electrolytic polishing liquid, using the assembly workpiece as an anode and a lead block as a cathode, applying voltage to achieve electrolytic polishing, then taking out the assembly workpiece, and sequentially cleaning and drying it; Preferably, after the electrolytic polishing treatment, the roughness of the surface of the assembly workpiece is Ra≤0.6 μm.

10. The preparation method according to claim 9, characterized in that: The temperature of the electrolytic polishing treatment is 35-60°C; Preferably, the voltage applied during the electrolytic polishing process is 5 to 10 V; Preferably, the electrolytic polishing treatment time is 150 to 220 seconds; Preferably, the cleaning method is ultrasonic cleaning; Preferably, the ultrasonic cleaning time is 8 to 15 minutes; Preferably, the temperature of the ultrasonic cleaning is 60-80°C; Preferably, the drying method is vacuum drying.

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