Multi-chip parallel IGBT module temperature on-line measurement device and method thereof

Abstract

The invention relates to the technical field of power electronic devices, in particular to a multi-chip parallel IGBT module temperature online measuring device which comprises an upper ceramic substrate and a lower ceramic substrate, the ceramic substrates are provided with two copper layers, the copper layers are connected with IGBT power devices through solder layers, the adjacent IGBT power devices are connected through a metal belt, and the metal belt is connected with the upper ceramic substrate and the lower ceramic substrate. Two thermistors are arranged on the surface of an emitting electrode of the IGBT power device, two bonding pads are arranged at the two ends of each thermistor respectively, and the bonding pads are connected with a lead through lead terminals. The thermistor directly measures the surface temperature of the chip, and the thermistor value is calculated through the voltage difference measured by the positive lead and the negative lead. According to the invention, the thermistor on the insulating layer of each IGBT power device can measure the temperature of each IGBT power device, thereby improving the temperature measurement capability of the multi-chip parallel IGBT power module, and achieving the intelligentization of the IGBT power module.

Description

Technical Field

[0001] The invention relates to the technical field of power electronic devices, in particular to an online temperature measurement device and method for multi-chip parallel IGBT modules. Background Art

[0002] Multi-chip parallel IGBT modules are widely used in rail transit, new energy power generation and other industries, ensuring various key application areas of electric energy production, transmission and utilization. As one of the core components in the power conversion system, the reliability of IGBT has received widespread attention. The reliable switching operation of IGBT can ensure the long-term safe and stable operation of the power conversion system. Power semiconductors account for the highest proportion of failed components in power converters, accounting for about 31% of failures. Temperature stress accounts for about 55% of various failure causes. Device junction temperature information is crucial to the safe and reliable operation of power converters, and the failure rate doubles for every 10°C increase in junction temperature.

[0003] Due to the thermal coupling effect in multi-chip parallel IGBT modules, traditional temperature measurement methods are difficult to monitor the temperature of each IGBT chip in real time online. Summary of the invention

[0004] The technical problem to be solved by the present invention is to provide an online temperature measurement device for multi-chip parallel IGBT modules to solve the above problem.

[0005] In order to solve the above technical problems, the technical solution adopted by the present invention is: a multi-chip parallel IGBT module temperature online measurement device, including two upper and lower ceramic substrates, two copper layers are provided on the ceramic substrate, the copper layers are connected to the IGBT power device through a solder layer, and the adjacent IGBT power devices are connected through a metal strip. Two thermistors are provided on the emitter surface of the IGBT power device, and two pads are provided at both ends of the thermistor, respectively, and the pads are connected to the lead through a lead terminal.

[0006] As a further solution of the present invention, the solder layer is a tin-silver-copper solder layer.

[0007] As a further solution of the present invention, a shielding layer is provided in the middle of the emitter of the IGBT power device, and a thermistor is welded to the shielding layer.

[0008] As a further solution of the present invention, the two thermistors are arranged in parallel.

[0009] As a further solution of the present invention, the pad on one side is connected to the positive electrode lead through a lead terminal, and the pad on the other side is connected to the negative electrode lead through a lead terminal.

[0010] As a further solution of the present invention, the resistance value of the thermistor is calculated by measuring the voltage of the positive lead and the negative lead.

[0011] As a further solution of the present invention, the thermistor, lead terminals and leads are all arranged in silicone gel.

[0012] A measuring method for an online temperature measuring device of a multi-chip parallel IGBT module, wherein a thermistor directly measures the chip surface temperature, and the thermistor value is calculated through the voltage measured by the positive lead and the negative lead.

[0013] Since the present invention adopts the above technical solution, the present invention has the advantages and positive effects: the thermistor on the insulating layer of each IGBT power device can measure the temperature of each IGBT power device, thereby improving the temperature measurement capability of a multi-chip parallel IGBT power module and realizing the intelligence of the IGBT power module. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 This is a top view of an IGBT power device. Figure 2 is a top view of the ceramic substrate. DETAILED DESCRIPTION

[0015] The present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0016] like Figure 1~2 As shown, the present invention provides an online temperature measurement device for a multi-chip parallel IGBT module, comprising an upper and lower ceramic substrate, two copper layers are provided on the ceramic substrate, the copper layers are connected to the IGBT power device through a solder layer, adjacent IGBT power devices are connected through a metal strip, two thermistors are provided on the emitter surface of the IGBT power device, two pads are provided at both ends of the thermistor, and the pads are connected to the lead through a lead terminal.

[0017] According to the present invention, the solder layer is a tin-silver-copper solder layer.

[0018] According to a further aspect of the present invention, a shielding layer is provided in the middle of the emitter of the IGBT power device, and a thermistor is welded to the shielding layer.

[0019] Furthermore, the two thermistors are arranged in parallel.

[0020] In the present invention, the pad on one side is connected to the positive electrode lead through a lead terminal, and the pad on the other side is connected to the negative electrode lead through a lead terminal.

[0021] Furthermore, the resistance value of the thermistor is calculated by measuring the voltage of the positive lead and the negative lead.

[0022] Furthermore, the thermistor, lead terminals and leads are all arranged in silicone gel.

[0023] A measuring method for an online temperature measuring device of a multi-chip parallel IGBT module, wherein a thermistor directly measures the chip surface temperature, and the thermistor value is calculated through the voltage measured by the positive lead and the negative lead.

[0024] Although specific embodiments of the present invention are described above, those skilled in the art should understand that these are merely examples and that various changes or modifications may be made to the embodiments without departing from the principles and essence of the present invention. The scope of protection of the present invention is limited only by the appended claims.

Claims

1. A multi-chip parallel IGBT module temperature online measurement device, characterized by: It comprises two upper and lower ceramic substrates, two copper layers are arranged on the ceramic substrates, the copper layers are connected to the IGBT power devices through solder layers, adjacent IGBT power devices are connected through metal strips, two thermistors are arranged on the emitter surfaces of the IGBT power devices, two pads are arranged at both ends of the thermistor, and the pads are connected to the leads through lead terminals.

2. The device for online temperature measurement of multi-chip parallel IGBT modules according to claim 1, characterized in that: A shielding layer is provided in the middle of the emitter of the IGBT power device, and a thermistor is welded to the shielding layer.

3. The device for online temperature measurement of multi-chip parallel IGBT modules according to claim 1, characterized in that: The two thermistors are arranged in parallel.

4. The device for online temperature measurement of multi-chip parallel IGBT modules according to claim 1, characterized in that: The pad on one side is connected to the positive electrode lead through a lead terminal, and the pad on the other side is connected to the negative electrode lead through a lead terminal.

5. The device for online temperature measurement of multi-chip parallel IGBT modules according to claim 4, characterized in that: The resistance value of the thermistor is calculated by the voltage difference measured between the positive lead and the negative lead.

6. The device for online temperature measurement of multi-chip parallel IGBT modules according to claim 1, characterized in that: The thermistor, lead terminals and lead wires are all arranged in the silicone gel.

7. The device for online temperature measurement of multi-chip parallel IGBT modules according to claim 1, characterized in that: The solder layer is a tin-silver-copper solder layer.

8. The method for measuring the temperature of a multi-chip parallel IGBT module online measuring device according to any one of claims 1 to 7, characterized in that: The thermistor directly measures the chip surface temperature, and the thermistor value is calculated by the voltage difference measured between the positive and negative leads.

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