Cadmium zinc telluride crystal orientation judgment device and method
By designing a zinc tellurium crystal orientation determination device, using a tilt clamping mechanism and a laser mechanism, efficient orientation determination of (211) crystal plane and other high-index crystal planes is achieved, and the problem of low orientation determination efficiency in the prior art is solved.
Patent Information
- Application Number
- CN202411675834.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-22
- Publication Date
- 2025-04-15
AI Technical Summary
The prior art is difficult to efficiently judge and process the (211) crystal plane and other high-index crystal plane orientations of zinc tellurium cadmium crystals, resulting in low processing efficiency and material loss.
A zinc tellurium crystal orientation determination device is designed, including a tilt clamping mechanism and a laser mechanism. By determining the common axis of the twin surface and the rotating twin surface, it assists in determining the position of the crystal surface to be measured, and realizes efficient judgment of the crystal orientation.
It greatly improves the determination and processing efficiency of zinc tellurium crystal orientation, simplifies the processing process, and reduces material losses.
Smart Images
Figure CN119827484A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the technical field of crystal orientation cutting and processing, and in particular to a device and method for determining the orientation of a cadmium zinc telluride crystal. Background Art
[0002] Cadmium zinc telluride (CdZnTe) crystals are widely used as epitaxial substrates for mercury cadmium telluride thin films in infrared detectors. Different applications require substrate surfaces with different crystal plane orientations. For example, in the liquid phase epitaxy process, the substrate surface needs to be a (111) crystal plane, while in the molecular beam epitaxy process, the substrate surface needs to be a (211) crystal plane.
[0003] Substrates with different crystal planes need to go through different processing procedures. For the processing of (111) crystal plane substrates, since the twin plane of CdZnTe material is the (111) crystal plane, the orientation of the crystal can be indirectly known with the help of the twin plane. The substrate surface with the (111) crystal plane can be obtained by cutting along the twin line exposed on the crystal surface using an inner circle cutting machine or a diamond wire cutting machine; and for the processing of (211) crystal plane substrates, since CdZnTe crystals have no surface features directly corresponding to the (211) crystal plane, it is difficult to make an indirect judgment based on the surface features of CdZnTe crystals, and it is necessary to use a single crystal orientation instrument for orientation testing. Its principle is to use X-rays and Bragg diffraction principles to realize the judgment of crystal orientation, and it has the characteristics of high orientation test accuracy. However, this test method requires the completion of cumbersome sample preparation processes such as crystal sampling, grinding, and polishing, and the test cycle is long and the efficiency is low. Secondly, if the deviation between the crystal orientation of the sample and the crystal plane to be tested is large, the orientation test may fail, and repeated sampling and testing are required, which not only causes the loss of crystal materials, but also reduces the efficiency of substrate orientation processing. In addition, with the development of crystal growth technology, seed crystal orientation growth technology has been applied in the field of CdZnTe crystal growth, and the preparation of seed crystals with various specific orientations has also put forward certain requirements for crystal orientation processing.
[0004] In view of this, how to provide a simple method for determining the orientation of the (211) crystal plane and other high-index crystal planes has become a technical problem that needs to be solved urgently. Summary of the invention
[0005] The embodiment of the present application provides a device for determining the orientation of a cadmium zinc telluride crystal, which is used to solve the contradiction between the stability dimension, accuracy and effective carrying space of the current system.
[0006] In a first aspect of an embodiment of the present application, a device for determining a cadmium zinc telluride crystal orientation is provided, comprising:
[0007] The tilting clamping mechanism, the bottom of which is installed on the mounting hole in the center of the bottom plate of the device, is used to clamp the CdZnTe crystal and adjust the placement of the crystal by rotation and pitch. The top is connected to the U-shaped graphite groove to hold the CdZnTe crystal.
[0008] The laser mechanism comprises a laser support slide rail base, a laser support and a cross-line laser, wherein the laser support slide rail base is installed on one side of the device bottom plate and connected to one side of the laser support, and the other side of the laser support is connected to the cross-line laser, and is used for positioning the common axis of the crystal twin plane and assisting in determining the position of the crystal plane to be measured by adjusting the laser irradiation position.
[0009] In an optional embodiment, the laser bracket includes a rocker arm and a mounting platform, which are used to fix and adjust the cross-line laser, and through the rocker arm and the mounting platform, the laser beam of the laser is adjusted to vertically illuminate the cube placed on the bottom plate of the device.
[0010] In an optional embodiment, the tilt clamping mechanism includes a clamping device base, a base mounting stud, a rotating disk with a scale, a clamp tilt adjustment screw, a tilt angle dial and a clamp chuck, wherein the base mounting stud passes through the middle of the clamping mounting base and the rotating disk with a scale stacked together; the rotating disk with a scale is provided with a tilt angle dial; and the clamp chuck is provided on the side of the clamp tilt adjustment rod away from the clamping device.
[0011] In an optional embodiment, the laser support slide rail is used for translationally adjusting the laser irradiation position.
[0012] In an optional embodiment, the CdZnTe crystal is placed in the U-shaped graphite groove, wherein the side of the CdZnTe crystal having the cross twin lines faces upward.
[0013] In a second aspect of an embodiment of the present application, a method for determining a cadmium zinc telluride crystal orientation is provided, comprising:
[0014] Determine the common axis corresponding to the twin planes of CdZnTe crystals;
[0015] Based on the common axis, by rotating any twin plane, the corresponding position of the crystal plane other than the twin plane is determined;
[0016] The orientation of the cadmium zinc telluride crystal is determined based on the corresponding positions of the crystal planes.
[0017] The present application provides a device for determining the orientation of a cadmium zinc telluride crystal, comprising: a tilting clamping mechanism, the bottom of which is mounted on a mounting hole at the center of a bottom plate of the device, for clamping the cadmium zinc telluride crystal and adjusting the placement position of the crystal by rotation and pitch, and the top of which is connected to a U-shaped graphite groove for supporting the cadmium zinc telluride crystal; a laser mechanism, comprising a laser support slide rail base, a laser support and a cross-line laser, wherein the laser support slide rail base is mounted on one side of the bottom plate of the device and connected to one side of the laser support, and the other side of the laser support is connected to the cross-line laser, and is used to perform common axis positioning of the crystal twin plane and auxiliary position determination of the crystal plane to be measured by adjusting the laser irradiation position.
[0018] The device for determining the orientation of a cadmium zinc telluride crystal provided by the embodiment of the present application has the advantages of being simple and efficient, and greatly improves the determination and processing efficiency of the orientation of a cadmium zinc telluride crystal.
[0019] The above description is only an overview of the technical solution of the present application. In order to more clearly understand the technical means of the present application, which can be implemented in accordance with the contents of the specification, and in order to make the above and other purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are listed below. BRIEF DESCRIPTION OF THE DRAWINGS
[0020] Various other advantages and benefits will become apparent to those of ordinary skill in the art by reading the detailed description of the preferred embodiments below. The accompanying drawings are only for the purpose of illustrating the preferred embodiments and are not to be considered as limiting the present application. Also, the same reference symbols are used throughout the accompanying drawings to represent the same components. In the accompanying drawings:
[0021] Figure 1 A schematic diagram of the structure of a device for determining the orientation of a cadmium zinc telluride crystal provided in an embodiment of the present application;
[0022] Figure 2 A schematic structural diagram of a tilting clamping structure in a device for determining the orientation of a cadmium zinc telluride crystal provided in an embodiment of the present application;
[0023] Figure 3 A schematic diagram of a process for determining the orientation of a cadmium zinc telluride crystal provided in an embodiment of the present application;
[0024] Figure 4 A schematic diagram of the distribution of commonly used crystal planes within the vertical projection of the (110) crystal plane in a method for determining the orientation of a cadmium zinc telluride crystal provided in an embodiment of the present application;
[0025] Among them, the device base-1; the tilting clamping mechanism-2, including the clamping device base-21, the base mounting studs-22, the rotating disk with scale-23, the fixture tilt adjustment screws-24, the tilt angle dial-25 and the fixture chuck-26; the U-shaped graphite groove-3; the cadmium zinc telluride crystal-4; the cross twin lines in the cadmium zinc telluride crystal-5; the laser bracket slide rail base-6; the laser bracket mechanism-7; the cross-line laser-8; the laser beam-9. DETAILED DESCRIPTION
[0026] The exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although the exemplary embodiments of the present disclosure are shown in the accompanying drawings, it should be understood that the present disclosure can be implemented in various forms and should not be limited by the embodiments set forth herein. On the contrary, these embodiments are provided to enable a more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.
[0027] The twin plane of CdZnTe crystal corresponds to the {111} crystal plane. When there are two non-parallel twin planes in CdZnTe crystal, they can be defined as (111) crystal plane and Crystal planes. According to crystallographic knowledge, the angle between the crystal planes is 70°32′, and the intersection line of the two crystal planes can be confirmed to be unique. Crystal direction, at this time it can also be considered The crystal plane is (111) The axis is rotated 70°32′. Similarly, the (111) crystal plane is rotated around Rotating the axis to other angles can obtain other (11h) crystal planes, where h can be any value, representing different crystal planes. According to this principle, it is only necessary to confirm the common axis of the twin planes, and by rotating any twin plane, the position of the remaining (11h) crystal planes can be confirmed, thus realizing the determination of the CdZnTe crystal orientation.
[0028] In order to realize the above operation process, the embodiment of the present application designs a crystal orientation testing device. Figure 1 , Figure 1 A schematic diagram of the structure of a device for determining the orientation of a cadmium zinc telluride crystal provided in an embodiment of the present application.
[0029] like Figure 1 As shown, the CdZnTe crystal orientation determination device comprises: a device base 1, a tilting clamping mechanism 2, a U-shaped graphite groove 3, a CdZnTe crystal 4, cross twin lines 5 in the CdZnTe crystal, a laser support slide rail base 6, a laser support mechanism 7, a cross-line laser 8 and a laser beam 9.
[0030] Specifically, the tilting clamping mechanism 2 is installed at the bottom of the mounting hole in the center of the bottom plate of the device, and is used to clamp the CdZnTe crystal and adjust the placement of the crystal by rotation and pitching. The top is connected to the U-shaped graphite groove and is used to lift the CdZnTe crystal. The CdZnTe crystal is placed in the U-shaped graphite groove, wherein the side of the CdZnTe crystal with the cross twin line faces upward.
[0031] The laser mechanism comprises a laser support slide rail base, a laser support and a cross-line laser, wherein the laser support slide rail base is installed on one side of the device bottom plate and connected to one side of the laser support, and the other side of the laser support is connected to the cross-line laser, and is used for positioning the common axis of the crystal twin plane and assisting in determining the position of the crystal plane to be measured by adjusting the laser irradiation position.
[0032] More specifically, the laser bracket includes a rocker arm and a mounting platform, which are used to fix and adjust the cross-line laser. Through the rocker arm and the mounting platform, the laser beam of the laser is adjusted to vertically irradiate the cube placed on the bottom plate of the device.
[0033] More specifically, the tilting clamping mechanism 2 comprises a clamping device base 21, a base mounting stud 22, a rotating disk with a scale 23, a fixture tilt adjustment screw 24, a tilt angle dial 25 and a fixture chuck 26, wherein the base mounting stud runs through the middle of the clamping mounting base and the rotating disk with a scale stacked together; the rotating disk with a scale is provided with a tilt angle dial; the fixture chuck is provided on the side of the fixture tilt adjustment rod away from the clamping device. Figure 2 , Figure 2 A schematic structural diagram of a tilting clamping structure in a CdZnTe crystal orientation determination device provided in an embodiment of the present application.
[0034] In another embodiment of the present application, the laser support slide rail is used to translate and adjust the laser irradiation position.
[0035] In practical applications, the device base provides installation locations for various components of the device, and is mainly used for the installation and fixation of the laser bracket slide rail and the detachable tilting chuck.
[0036] The detachable tilt chuck of the tilt clamping mechanism is installed on the mounting hole in the center of the base plate. It is used to clamp the crystal and adjust the placement of the crystal by rotation and pitch. The bottom screw is compatible with crystal processing equipment.
[0037] The U-shaped graphite groove is used to support the crystal and facilitate the rotation of the crystal in the groove to adjust the crystal position.
[0038] The cross-line laser is used to assist the human eye in locating the common axis of the crystal twin planes and to assist in determining the position of the crystal plane to be measured.
[0039] The laser bracket mechanism is used to fix and adjust the laser. The laser irradiation direction can be adjusted through the bracket's rocker arm and the laser mounting platform to achieve vertical laser irradiation of the device bottom plate.
[0040] The device for determining the orientation of a cadmium zinc telluride crystal provided by the embodiment of the present application has the advantages of being simple and efficient, and greatly improves the determination and processing efficiency of the orientation of a cadmium zinc telluride crystal.
[0041] See also Figure 3 , Figure 3 A schematic flow chart of a method for determining the orientation of a cadmium zinc telluride crystal provided in an embodiment of the present application, which specifically includes the following steps.
[0042] Step S302: determining a common axis corresponding to the twin plane of the CdZnTe crystal.
[0043] Step S304: Based on the common axis, by rotating any twin plane, the corresponding position of the crystal plane other than the twin plane is determined.
[0044] Step S306: determining the orientation of the CdZnTe crystal based on the corresponding positions of the crystal planes.
[0045] In practical applications, the cross-line laser is first mounted on the laser bracket, and a cube is placed in the center of the device base plate to assist in laser adjustment.
[0046] Adjust the laser bracket rocker arm and the laser mounting platform so that the laser cross beam coincides with any right-angled side of the cube to complete the vertical adjustment of the laser. At this time, the laser vertically illuminates the bottom plate of the device, and then remove the cube to turn off the laser.
[0047] Install the removable tilting fixture to the mounting hole in the center of the bottom plate of the device, use the fixture to clamp the U-shaped graphite groove, ensure that it is firmly clamped, and then place the crystal to be measured in the U-shaped graphite groove. Flip the CdZnTe crystal in the U-shaped graphite groove so that the side with two cross twin lines faces up.
[0048] Turn on the laser switch and translate the laser bracket so that the laser shines vertically on the crystal surface.
[0049] By rotating the fixture rotating disk, tilting the adjustment screw, and flipping the CdZnTe crystal in the U-shaped graphite groove, the cross-line laser beam is completely aligned with a twin line on the crystal surface.
[0050] Replace the next twin line and repeat the above operation so that the cross-line laser beam completely coincides with another twin line on the crystal surface again.
[0051] At this time, only rotate the fixture rotating disk to check whether the cross-line laser beam still coincides with the first twin line. If so, proceed to the next step. If not, repeat the previous adjustment process and continue testing until the test passes.
[0052] At this time, the intersection line of the two intersecting twin planes of the crystal is perpendicular to the bottom plate of the device and the intersection line is defined as a common axis, and the preliminary position adjustment operation is completed.
[0053] Taking the determination of the position of the (112) crystal plane as an example, the rotating disk of the fixture base is rotated so that the laser cross beam coincides with one of the twin lines, and then the rotating disk of the fixture base is rotated again according to the scale so that the laser beam that originally coincided with the twin line is rotated 19°29′ around the common axis in the direction of the obtuse angle of the cross twin line. At this time, the position of the laser beam that originally coincided with the twin line is the (112) crystal plane. Use a rubber strip to simply fix the crystal, and then use a marker to draw the position of the laser beam. Remove it together with the fixture and install it in an internal circle cutting machine or diamond wire cutting machine. Cut vertically along the position drawn by the marker to obtain the surface of the (112) crystal plane. Similarly, according to the above operation, by rotating in other directions and angles, the positions of other high-index crystal planes can be obtained. Commonly used crystal plane rotation methods are shown in the table below. Figure 4 As shown, Figure 4 A schematic diagram of the distribution of commonly used crystal planes within the vertical projection of the (110) crystal plane in a method for determining the orientation of a cadmium zinc telluride crystal provided in an embodiment of the present application.
[0054] The method for determining the orientation of a cadmium zinc telluride crystal provided in the embodiment of the present application has the advantages of being simple and efficient, and greatly improves the determination of the orientation of a cadmium zinc telluride crystal and the processing efficiency.
[0055] Each embodiment in this specification is described in a progressive manner, and the same or similar parts between the embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. In particular, for the network traffic anomaly detection device based on feature grouping and autoencoder integration, since it is basically similar to the network traffic anomaly detection method embodiment based on feature grouping and autoencoder integration, the description is relatively simple, and the relevant parts can be referred to the partial description of the network traffic anomaly detection method embodiment based on feature grouping and autoencoder integration.
[0056] It should be noted that the above is a description of a specific embodiment of the present specification. Other embodiments are within the scope of the appended claims. In some cases, the actions or steps recorded in the claims can be performed in an order different from that in the embodiments and still achieve the desired results. In addition, the processes depicted in the accompanying drawings do not necessarily require the specific order or continuous order shown to achieve the desired results. In some embodiments, multitasking and parallel processing are also possible or may be advantageous. Secondly, those skilled in the art should also be aware that the embodiments described in the specification are all preferred embodiments, and the actions and modules involved are not necessarily required by the embodiments of the present specification.
[0057] In the above embodiments, the description of each embodiment has its own emphasis. For parts that are not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.
[0058] The preferred embodiments of this specification disclosed above are only used to help explain this specification. The optional embodiments do not describe all the details in detail, nor do they limit the invention to only the specific implementation methods described. Obviously, many modifications and changes can be made according to the content of the embodiments of this specification. This specification selects and specifically describes these embodiments in order to better explain the principles and practical applications of the embodiments of this specification, so that technicians in the relevant technical field can well understand and use this specification. This specification is only limited by the claims and their full scope and equivalents.
Claims
1. A device for determining the orientation of a cadmium zinc telluride crystal, characterized in that: include: The tilting clamping mechanism, the bottom of which is installed on the mounting hole in the center of the bottom plate of the device, is used to clamp the CdZnTe crystal and adjust the placement of the crystal by rotation and pitch. The top is connected to the U-shaped graphite groove to hold the CdZnTe crystal. The laser mechanism comprises a laser support slide rail base, a laser support and a cross-line laser, wherein the laser support slide rail base is installed on one side of the device bottom plate and connected to one side of the laser support, and the other side of the laser support is connected to the cross-line laser, and is used for positioning the common axis of the crystal twin plane and assisting in determining the position of the crystal plane to be measured by adjusting the laser irradiation position.
2. The device for determining the orientation of a cadmium zinc telluride crystal according to claim 1, characterized in that: The laser support includes a rocker arm and a mounting platform, which are used to fix and adjust the cross-line laser. The laser beam of the laser is adjusted to vertically irradiate the cube placed on the bottom plate of the device through the rocker arm and the mounting platform.
3. The device for determining the orientation of a cadmium zinc telluride crystal according to claim 1, characterized in that: The tilting clamping mechanism includes a clamping device base, a base mounting stud, a rotating disk with a scale, a clamp tilt adjustment screw, a tilt angle dial and a clamp chuck, wherein the base mounting stud passes through the middle of the clamping mounting base and the rotating disk with a scale stacked together; the rotating disk with a scale is provided with a tilt angle dial; and the clamp chuck is provided on the side of the clamp tilt adjustment rod away from the clamping device.
4. The device for determining the orientation of a cadmium zinc telluride crystal according to claim 1, characterized in that: The laser support slide rail is used for translationally adjusting the laser irradiation position.
5. The device for determining the orientation of a cadmium zinc telluride crystal according to claim 1, characterized in that: The CdZnTe crystal is placed in the U-shaped graphite groove, wherein the side of the CdZnTe crystal having the cross twin line faces upward.
6. A method for determining the crystal orientation of cadmium zinc telluride, characterized in that: include: Determine the common axis corresponding to the twin planes of CdZnTe crystals; Based on the common axis, by rotating any twin plane, the corresponding position of the crystal plane other than the twin plane is determined; The orientation of the cadmium zinc telluride crystal is determined based on the corresponding positions of the crystal planes.