Optoelectronic tweezer device capable of patterning microscopic particles

Abstract

The application discloses a photoelectric tweezers device capable of patterning and controlling micro particles, relates to the technical field of micro particle control, and comprises a patterned light beam generating light path, an ultraviolet sheet-shaped illumination module and a photovoltaic wafer control platform. The patterned light beam generating light path generates a preset pattern light beam, and the preset pattern light beam generates a first electric field on the photovoltaic wafer control platform. The ultraviolet sheet-shaped illumination module generates a second laser, and the second laser is expanded, and the intensity and diameter of the expanded second laser are controlled, so that a second electric field is generated on the photovoltaic wafer control platform. Micro particles in the photovoltaic wafer control platform move to a preset pattern area under the influence of the first electric field and the second electric field. The application captures micro particles by using patterned laser, so that the number of controlled particles is increased and the capturing efficiency is improved.

Description

Technical Field

[0001] This invention relates to the field of microparticle manipulation technology, and more specifically to an optoelectronic tweezers device capable of patterned manipulation of microparticles. Background Technology

[0002] Optoelectronic tweezers (OETs) are a novel technology that uses dielectrophoresis to manipulate a large number of tiny objects, including suspended particles, biological cells, macromolecules, and even atoms. Because lithium niobate crystals (LiNbO3, LN) possess excellent photoelectric properties, their surface generates a photovoltaic electric field upon illumination, enabling particle trapping without the need for external electrodes. Optoelectronic tweezers greatly enrich photoinduced micromanipulation techniques and are primarily used for analysis, screening, reaction, extraction, and detection. Lithium niobate-based OETs have become a core technology in lab-on-a-chip applications.

[0003] Over the past 20 years, researchers have been dedicated to in-depth research and continuous innovation in the functionality of optoelectronic tweezers. Esseling M et al. reported on OET capture experiments on C-cut LiNbO3 surfaces, using a spatial electric field to capture polystyrene microspheres with uniformly attached silver. Munoz-Martinez JF et al. first achieved the capture of micron-sized calcium carbonate particles and nano-sized aluminum particles on C-cut LiNbO3 crystals, forming one-dimensional and two-dimensional capture patterns, respectively. Verma RS et al. used OET to manipulate polystyrene microspheres and red blood cells. In recent years, there has been an increasing trend in domestic research reports on OET. Wang Kai et al. from Tianjin University used a self-built femtosecond laser optical tweezers to achieve stable capture of human red blood cells (RBCs). Song Chunfeng, Ni Zhonghua et al., based on a comprehensive analysis of current biological particle micromanipulation technologies, designed a micromanipulation chip based on photoinduced dielectrophoresis technology combined with a detection and tracking system to construct a manipulation experimental platform for particle capture and transport, including the transport of single particles.

[0004] Utilizing the photovoltaic effect of crystals (lithium niobate, lithium tantalate), OET (Optical Electron Emission) technology offers advantages such as no need for external electrodes, low light intensity requirements, and the ability to flexibly capture large numbers of microscopic particles, thus improving capture efficiency and reducing capture time. However, OET based on a single laser point has a small coverage area, a limited number of manipulated particles, and low capture efficiency. Therefore, developing parallel OET technology is of significant practical importance for high-throughput microscopic particle manipulation.

[0005] Therefore, how to increase the number of manipulated particles while improving capture efficiency is a problem that urgently needs to be solved by those skilled in the art. Summary of the Invention

[0006] In view of this, the present invention provides an optoelectronic tweezers device capable of patterned manipulation of microscopic particles to solve the problems existing in the background art.

[0007] To achieve the above objectives, the present invention adopts the following technical solution:

[0008] An optoelectronic tweezers device capable of patterned manipulation of microscopic particles includes: a patterned beam generating optical path, an ultraviolet sheet illumination module, and a photovoltaic wafer manipulation platform. The patterned beam generating optical path generates a preset patterned beam, which generates a first electric field on the photovoltaic wafer manipulation platform. The ultraviolet sheet illumination module generates a second laser, which is then expanded, and the intensity and diameter of the expanded second laser are controlled to generate a second electric field on the photovoltaic wafer manipulation platform. Microscopic particles inside the photovoltaic wafer manipulation platform move towards the preset patterned region under the influence of the first and second electric fields.

[0009] Preferably, the photovoltaic wafer manipulation platform includes: a clamping displacement stage, a first C-cut lithium iron niobate wafer and a second C-cut lithium iron niobate wafer, wherein the first C-cut lithium iron niobate wafer and the second C-cut lithium iron niobate wafer are fixed on the clamping displacement stage; the first C-cut lithium iron niobate wafer receives a preset pattern beam of light to generate a first electric field; the second C-cut lithium iron niobate wafer receives a second laser beam to generate a second electric field.

[0010] Preferably, the patterned beam generation optical path includes: a first laser, a first lens, a second lens, a half-wave plate, a spatial light modulator, a first quarter-wave plate, a polarizer, a second quarter-wave plate, an imaging lens, a dichroic mirror, a microscope objective, an illumination source, a filter, and an imaging camera. The first laser generates a first laser beam, which sequentially passes through the first lens, the second lens, the half-wave plate, the spatial light modulator, the first quarter-wave plate, the polarizer, the second quarter-wave plate, and the imaging lens to generate a preset patterned beam. The preset patterned beam passes through the dichroic mirror and the microscope objective and enters the first C-cut lithium iron niobate wafer. The illumination source provides light for the photovoltaic wafer manipulation platform and the microscope objective. The imaging camera records the movement of microscopic particles in the photovoltaic wafer manipulation platform. The filter adjusts the brightness of the light entering the imaging camera.

[0011] Preferably, the ultraviolet sheet illumination module includes: a second laser, a beam expanding system, and an adjustable slit. The second laser generates a second laser beam, which passes sequentially through the beam expanding system and the adjustable slit. The beam expanding system expands the diameter of the second laser beam to twice its original size. The adjustable slit controls the beam diameter and intensity of the expanded second laser beam by adjusting the slit, and then inputs the second laser beam into the second C-cut lithium iron niobate wafer.

[0012] Preferably, the beam expanding system includes a third lens and a fourth lens, the third lens having a focal length of 30mm, the fourth lens having a focal length of 60mm, and the third lens and the fourth lens being 90mm apart.

[0013] Preferably, the half-wave plate adjusts the polarization direction of the laser incident on the spatial light modulator to an angle of 45° / 135° with the working direction of the spatial light modulator.

[0014] Preferably, the first quarter-wave plate converts the depolarized light reflected by the spatial light modulator into a linearly polarized state, sharpening the spot pattern of the light passing through the polarizer.

[0015] Preferably, the patterned region loaded on the spatial light modulator is consistent with the preset pattern on the focal plane of the microscope objective. The phase information loaded in the patterned region is π, while the phase information in other regions is 0. The delay of the π phase is used to make the polarization state of the laser reflected from the loaded patterned region orthogonal to the polarization state of the incident laser.

[0016] Preferably, a second quarter-wave plate is provided after the polarizer, which is at 45° to the polarization direction of the light passing through the polarizer, so as to convert the linearly polarized light into circularly polarized light.

[0017] Preferably, the dichroic mirror is at a 45° angle to the incident laser, resulting in total internal reflection of the incident laser wavelength and high transmission to the illumination source wavelength.

[0018] As can be seen from the above technical solution, compared with the prior art, the present invention discloses an optoelectronic tweezers device capable of patterned manipulation of microscopic particles, which has the following advantages compared with the prior art:

[0019] 1. Using patterned lasers to capture microscopic particles is highly efficient. Its efficiency is reflected in the fact that the structure of the patterned beam provides a larger beam illumination range, enabling higher throughput particle capture.

[0020] 2. It has more diverse forms of micro-particle manipulation. It can shape the laser beam into various shapes and patterns through a spatial light modulator to manipulate micro-particles.

[0021] 3. It has a more flexible control method, and can capture micro particles in both liquid and air environments.

[0022] 4. The device is easy to operate, scientifically designed, and inexpensive, making it easy to promote and apply. Attached Figure Description

[0023] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0024] Figure 1 A schematic diagram of the structure of an optoelectronic tweezers device capable of patterned manipulation of microscopic particles provided by the present invention;

[0025] Figure 2 A beam characteristic diagram at various markers in the optical path of an optoelectronic tweezers device capable of patterned manipulation of microscopic particles, provided by the present invention;

[0026] Figure 3 The present invention provides a photovoltaic effect manipulation principle and process diagram of an optoelectronic tweezers device for patterned manipulation of micro-particles; wherein, a is a principle diagram of photovoltaic effect manipulation of micro-particles, b is a micro-particle distribution diagram before laser irradiation, c is a micro-particle motion trend diagram after laser irradiation, and d is a final distribution diagram of micro-particles after laser irradiation.

[0027] In the figure: 1 Patterned beam generation optical path; 101 First laser; 102 First lens; 103 Second lens; 104 Half-wave plate; 105 Spatial light modulator; 106 First quarter-wave plate; 107 Polarizer; 108 Second quarter-wave plate; 109 Imaging lens; 110 Dichroic mirror; 111 Microscope objective; 112 Illumination source; 113 Filter; 114 Image sensor; 2 Ultraviolet sheet illumination module; 201 Second laser; 202 Third lens; 203 Fourth lens; 204 Adjustable slit; 3 Photovoltaic wafer manipulation platform; 301 Clamping displacement stage; 302 First C-cut lithium iron niobate wafer; 303 Second C-cut lithium iron niobate wafer. Detailed Implementation

[0028] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0029] This invention discloses an optoelectronic tweezers device capable of patterned manipulation of microscopic particles, such as... Figure 1As shown, it includes: a patterned beam generating optical path 1, an ultraviolet sheet illumination module 2, and a photovoltaic wafer manipulation platform 3. The patterned beam generating optical path 1 generates a preset patterned beam, which generates a first electric field on the photovoltaic wafer manipulation platform 3. The ultraviolet sheet illumination module 2 generates a second laser, which is then expanded. The intensity and diameter of the expanded second laser are controlled to generate a second electric field on the photovoltaic wafer manipulation platform 3. Microscopic particles inside the photovoltaic wafer manipulation platform 3 move towards the preset patterned area under the influence of the first and second electric fields.

[0030] In one specific embodiment, the photovoltaic wafer manipulation platform 3 includes a clamping displacement stage 301, a first C-cut lithium iron niobate wafer 302, and a second C-cut lithium iron niobate wafer 303. The first C-cut lithium iron niobate wafer 302 and the second C-cut lithium iron niobate wafer 303 are fixed on the clamping displacement stage 301. The first C-cut lithium iron niobate wafer 302 receives a preset pattern beam of light to generate a first electric field. The second C-cut lithium iron niobate wafer 303 receives a second laser beam to generate a second electric field. The clamping displacement stage 301 can adjust the relative positions of the first C-cut lithium iron niobate wafer 302 and the second C-cut lithium iron niobate wafer 303 in the x, y, and z axis directions.

[0031] In one specific embodiment, the patterned beam generating optical path 1 includes: a first laser 101, a first lens 102, a second lens 103, a half-wave plate 104, a spatial light modulator 105, a first quarter-wave plate 106, a polarizer 107, a second quarter-wave plate 108, an imaging lens 109, a dichroic mirror 110, a microscope objective 111, an illumination source 112, a filter 113, and an imaging camera 114. The first laser 101 generates a first laser beam, which sequentially passes through the first lens 102, the second lens 103, the half-wave plate 104, the spatial light modulator 105, and the beam... A first quarter-wave plate 106, a polarizer 107, a second quarter-wave plate 108, and an imaging lens 109 are placed sequentially along the reflected light path after entering the spatial light modulator 105 at an angle of 5-10° to generate a preset pattern beam. The preset pattern beam passes through a dichroic mirror 110 and a microscope objective 111 and enters the first C-cut lithium iron niobate wafer 302. The illumination source 112 provides light to the photovoltaic wafer manipulation platform 3 and the microscope objective 111. The imaging camera 114 records the movement of microscopic particles in the photovoltaic wafer manipulation platform 3. The filter 113 adjusts the brightness of the light entering the imaging camera 114.

[0032] In the diagram, mark 1 is the polarization direction of the laser after beam expansion, mark 2 is the polarization direction of the laser after passing through a half-wave plate, mark 3 is the pattern loaded by the spatial light modulator, mark 4 is the depolarized light reflected by the spatial light modulator, mark 5 is the depolarization of the first quarter-wave plate into a linear polarization state, mark 6 is the polarization direction of the laser after passing through a polarizer, and mark 7 is the conversion of the linearly polarized light into circularly polarized light by the second quarter-wave plate.

[0033] Reference Figure 2In this embodiment, the continuous wave excitation light is provided by an external light source and is all linearly polarized light (as shown in mark 1). The center wavelength of the first laser 101 is 405nm. The focal length of the first lens 102 is 30mm, the focal length of the second lens 103 is 90mm, and the distance between the first lens 102 and the second lens 103 is 120mm (the two convex lenses form a beam expanding system). The diameter of the laser is expanded to 3 times its original size by the beam expanding system formed by the first lens 102 and the second lens 103. After beam expansion, the laser polarization direction incident on the spatial light modulator is adjusted by the half-wave plate 104 to form a 45° angle with the working direction of the spatial light modulator (as shown in mark 2). The patterned region loaded on the spatial light modulator 105 is consistent with the expected pattern on the focal plane of the microscope objective 111, and the phase information loaded on its patterned region is π, while the phase information of other regions is 0. The π phase delay is used to make the polarization state of the laser reflected from the loaded patterned region orthogonal to the polarization state of the incident laser (as shown in mark 3). The laser reflected by the spatial light modulator 105 enters the first quarter-wave plate 106, converting the depolarized light reflected by the spatial light modulator 105 (as shown in mark 4) into a linearly polarized state (as shown in mark 5), thus sharpening the spot pattern passing through the polarizer 107. The beam then enters the polarizer 107, whose light transmission direction is 135° / -45°, parallel to the laser polarization state modulated by the spatial light modulator 105, making the vibration direction of the polarized light incident at 135° / -45° (as shown in mark 5). As shown in mark 6), the linearly polarized light is then converted into circularly polarized light by a second quarter-wave plate 108 at a 45° angle to the polarization direction of the polarizer 107 (as shown in mark 7). The light then passes through the imaging lens 109 and is reflected by a dichroic mirror 110 at a 45° angle to the incident laser before entering the microscope objective 111. The light is imaged on the surface of the first C-cut lithium iron niobate wafer 302. The illumination source 112 provides a light source for the imaging camera 114. The microscopic particle motion information of the photovoltaic wafer manipulation platform 3 is transmitted to the imaging camera 114 through the microscope objective 111, the dichroic mirror 110, and the filter 113. An imaging lens 109 is set between the spatial light modulator 105 and the microscope objective 111. The focal length f5 of the imaging lens 109 is 150 mm, and the distances from the imaging lens 109 to the spatial light modulator 105 and to the rear focal plane of the microscope objective 111 are equal to the focal length of the imaging lens 109, i.e., f5 = L1 + L2.

[0034] In one specific embodiment, the ultraviolet sheet illumination module 2 includes: a second laser 201, a beam expanding system, and an adjustable slit 204. The second laser 201 generates a second laser beam, which passes sequentially through the beam expanding system and the adjustable slit 204. The beam expanding system expands the diameter of the second laser beam to twice its original size. The adjustable slit 204 controls the beam diameter and intensity of the second laser beam after the expansion by adjusting the slit, and then inputs the second laser beam into the second C-cut lithium iron niobate wafer 303. The center position of the adjustable slit 204 is at the same height as the center position of the second laser beam 201. Furthermore, the center position of the adjustable slit 204 and the center position of the second laser beam 201 are always consistent with the center position of the second C-cut lithium niobate wafer 303 of the photovoltaic wafer manipulation platform 3.

[0035] In one specific embodiment, the second laser 201 has the same center wavelength of 405nm as the first laser 101; the third lens 202 has a focal length f3 of 30mm, the fourth lens 203 has a focal length f4 of 60mm, and the third lens 202 and the fourth lens 203 are 90mm apart (the two convex lenses form a beam expanding system). The diameter of the laser beam is expanded to twice its original size through the beam expanding system formed by the third lens 202 and the fourth lens 203. After beam expansion, the diameter and intensity of the laser beam entering the second C-cut lithium iron niobate wafer 303 from the side can be controlled by the adjustable slit 204.

[0036] In one specific embodiment, the beam expanding system includes a third lens 202 and a fourth lens 203, the third lens 202 having a focal length of 30mm and the fourth lens 203 having a focal length of 60mm, and the third lens 202 and the fourth lens 203 being 90mm apart.

[0037] In one specific embodiment, the half-wave plate 104 adjusts the polarization direction of the laser incident on the spatial light modulator 105 to form an angle of 45° / 135° with the working direction of the spatial light modulator 105.

[0038] In one specific embodiment, the first quarter-wave plate 106 converts the depolarized light reflected by the spatial light modulator 105 into a linear polarized state, sharpening the light spot pattern passing through the polarizer 107.

[0039] In one specific embodiment, the patterned region loaded on the spatial light modulator 105 is consistent with the preset pattern on the focal plane of the microscope objective 111. The phase information loaded on the patterned region is π, while the phase information of other regions is 0. The delay of the π phase is used to make the polarization state of the laser reflected from the loaded patterned region orthogonal to the polarization state of the incident laser.

[0040] In one specific embodiment, a second quarter-wave plate 108 is disposed after the polarizer 107, which is at 45° to the polarization direction of the light passing through the polarizer 107, so as to convert the linearly polarized light into circularly polarized light.

[0041] In one specific embodiment, the dichroic mirror 110 forms a 45° angle with the incident laser, performing total internal reflection of the incident laser wavelength and high transmission of the illumination source 112 wavelength.

[0042] Reference Figure 3 In this embodiment, the first C-cut iron-doped lithium niobate wafer 302 and the second C-cut iron-doped lithium niobate wafer 303 have an iron doping concentration of 0.03% and align their +C surfaces. The second C-cut iron-doped lithium niobate wafer 303, when irradiated by the second laser 201, generates a large-scale electric field. Meanwhile, the patterned area irradiated by the first laser 101, after being magnified by a microscope, generates a small-scale electric field on the first C-cut iron-doped lithium niobate wafer 302. Because the charged regions on the two wafers are of different sizes, a non-uniform electric field is formed between the wafers (as shown in a). The microparticles are thus in a non-equilibrium force state and move towards the patterned area (as shown in b, c, and d). The electric force experienced by the microparticles after polarization in the non-uniform electric field is the dielectrophoretic force. This is a conventional method for manipulating microparticles using photoelectric tweezers. The expression for the dielectrophoretic force experienced by the microparticles in the non-uniform electric field is:

[0043]

[0044] Where r is the radius of the microscopic particle, ε m Let α be the dielectric constant of the medium, E be the electric field strength, and α be the electric field strength. ( ω is the Klausius-Mossotti factor;

[0045] α ( ω ) The expression is:

[0046]

[0047] in, ε represents the complex dielectric constant of the microscopic particle and the medium, respectively, σ is the conductivity, and ω is the angular frequency of the electric field. When the provided electric field is a constant electric field, that is, when the angular frequency ω→0, ε * Since the imaginary part approaches infinity, Re[α(ω)] can be expressed as:

[0048]

[0049] Therefore, the final expression for the dielectrophoretic force is:

[0050]

[0051] In this embodiment, the direction and magnitude of the dielectric force on the microparticle can be determined according to the above formula; when Re[α(ω)]>0, the microparticle is captured by photoelectric tweezers and is subjected to a positive dielectric force; when Re[α(ω)]<0, the microparticle is captured by photoelectric tweezers and is subjected to a negative dielectric force.

[0052] The various embodiments in this specification are described in a progressive manner, with each embodiment focusing on its differences from other embodiments. Similar or identical parts between embodiments can be referred to interchangeably. For the apparatus disclosed in the embodiments, since it corresponds to the method disclosed in the embodiments, the description is relatively simple; relevant parts can be referred to the method section.

[0053] The above description of the disclosed embodiments enables those skilled in the art to make or use the invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the invention. Therefore, the invention is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. An optoelectronic tweezer device capable of patterning micro- particles, characterized in that, The application relates to a photovoltaic wafer manipulation platform, which comprises a patterned light beam generating light path (1), an ultraviolet sheet illumination module (2) and the photovoltaic wafer manipulation platform (3), the patterned light beam generating light path (1) generates a preset pattern light beam, the preset pattern light beam generates a first electric field on the photovoltaic wafer manipulation platform (3); the ultraviolet sheet illumination module (2) generates a second laser, the second laser is expanded, the intensity and diameter of the expanded second laser are controlled, and a second electric field is generated on the photovoltaic wafer manipulation platform (3); micro particles in the photovoltaic wafer manipulation platform (3) move to a preset pattern area under the influence of the first electric field and the second electric field. The photovoltaic wafer manipulation platform (3) comprises a clamping displacement table (301), a first C-cut iron-doped lithium niobate wafer (302) and a second C-cut iron-doped lithium niobate wafer (303), the first C-cut iron-doped lithium niobate wafer (302) and the second C-cut iron-doped lithium niobate wafer (303) are fixed on the clamping displacement table (301); the first C-cut iron-doped lithium niobate wafer (302) receives the preset pattern light beam and generates the first electric field; the second C-cut iron-doped lithium niobate wafer (303) receives the second laser and generates the second electric field.

2. The photo-optical tweezers device capable of patterning micro- particles according to claim 1, wherein, The patterned light beam generating light path (1) comprises a first laser (101), a first lens (102), a second lens (103), a half-wave plate (104), a spatial light modulator (105), a first quarter-wave plate (106), a polarizer (107), a second quarter-wave plate (108), an imaging lens (109), a dichroic mirror (110), a microscope objective (111), an illumination light source (112), a filter (113) and an imaging camera (114), the first laser (101) generates a first laser, and the first laser sequentially passes through the first lens (102), the second lens (103), the half-wave plate (104), the spatial light modulator (105), the first quarter-wave plate (106), the polarizer (107), the second quarter-wave plate (108) and the imaging lens (109) to generate a preset pattern light beam; the preset pattern light beam enters the first C-cut iron-doped lithium niobate wafer (302) through the dichroic mirror (110) and the microscope objective (111); the illumination light source (112) provides light for the photovoltaic wafer manipulation platform (3) and the microscope objective (111), the imaging camera (114) records the motion of micro particles in the photovoltaic wafer manipulation platform (3), and the filter (113) adjusts the light brightness entering the imaging camera (114).

3. The photo-optical tweezers device capable of patterning micro- particles according to claim 2, wherein, ​ 4. The photo-optical tweezers device capable of patterning micro- particles according to claim 2, wherein, The ultraviolet sheet-shaped illumination module (2) comprises a second laser (201) generating a second laser, a beam expander system and an adjustable slit (204) through which the second laser passes in sequence; the beam expander system expands the diameter of the second laser to 2 times the original diameter; the adjustable slit (204) controls the beam diameter and intensity of the second laser after diameter expansion by adjusting the slit, and then inputs the second laser beam into the second C-cut iron-doped lithium niobate crystal sheet (303).

5. The photo-optical tweezers device capable of patterning micro- particles according to claim 4, wherein, The beam expander system comprises a third lens (202) and a fourth lens (203), the focal length of the third lens (202) is 30 mm, the focal length of the fourth lens (203) is 60 mm, and the third lens (202) and the fourth lens (203) are apart by 90 mm.

6. The photo-optical tweezers device capable of patterning micro- particles according to claim 3, wherein, The half-wave plate (104) adjusts the polarization direction of the laser incident on the spatial light modulator (105) to be 45° / 135° with the working direction of the spatial light modulator (105).

7. The photo-optical tweezers device according to claim 3, wherein the photo- optical tweezers device is capable of being patterned. The first quarter-wave plate (106) converts the depolarized light reflected by the spatial light modulator (105) into linear polarization, and sharpens the spot pattern passing through the polarizer (107).

8. The photo-optical tweezers device according to claim 3, wherein the photo- optical tweezers device is patternable. The spatial light modulator (105) loads a pattern area consistent with the preset pattern on the focal plane of the microscope objective (111), the phase information of the pattern area loaded is π, and the phase information of other areas is 0, the delay of the π phase makes the polarization state of the laser reflected by the loaded pattern area orthogonal to the polarization state of the incident laser.

9. The photo-optical tweezers device capable of patterning micro- particles according to claim 3, wherein, The polarizer (107) is provided with a second quarter-wave plate (108) behind it, which is 45° with the polarization direction of the light passing through the polarizer (107), and converts linear polarization into circular polarization.

10. The photo-optical tweezers device capable of patterning micro- particles according to claim 3, wherein, The dichroic mirror (110) is 45° with the incident laser, fully reflects the incident laser waveband, and is highly transmissive to the illumination light source (112) waveband.

Images