Wafer cleaning equipment and cleaning method

Abstract

The invention relates to the technical field of wafer cleaning, and discloses wafer cleaning equipment and a cleaning method. The wafer cleaning equipment comprises a cleaning chamber, a first cleaning assembly and a purging assembly, the cleaning chamber is suitable for containing wafers, and the first cleaning assembly communicates with the cleaning chamber through a first conveying pipeline and sprays dry ice and snow particles to the wafers in the cleaning chamber; the purging assembly comprises a first gas storage tank containing purging gas and a heating structure arranged in the first gas storage tank and used for heating the purging gas. The purging assembly is used for communicating with the first conveying pipeline and introducing heated purging gas into the cleaning cavity. The first cleaning assembly sprays dry ice and snow particles to the upper surface of the wafer in the cleaning cavity along the first conveying pipeline, and nanoscale particle pollutants on the surface of the wafer are physically removed; the purging assembly enables the heated purging gas to be introduced into the cleaning cavity along the first conveying pipeline, residual dry ice and snow particles are removed, blockage is prevented, meanwhile, the temperature of the cleaning cavity is adjusted through the heating gas, and subsequent wafer cleaning is guaranteed.

Description

Technical Field

[0001] The present invention relates to the technical field of wafer cleaning, and in particular to wafer cleaning equipment and a cleaning method. Background Art

[0002] During the manufacturing and polishing process of the wafer, some contaminants will inevitably be introduced. They will adhere to the surface of the wafer. If they are not cleaned in time, they will affect the quality of subsequent processes and even cause the failure of subsequent processes. With the development of semiconductor technology, advanced processes are more sensitive to impurities, and the requirements for wafer surface cleanliness and damage are getting higher and higher. In addition, it is more difficult to efficiently clean small-sized contaminants, and the process flow is extended and increasingly complex. Therefore, a cleaning method that can effectively remove contaminants without damaging the wafer surface is needed.

[0003] Based on this, low-temperature carbon dioxide cleaning technology came into being. Low-temperature carbon dioxide cleaning technology uses low-temperature carbon dioxide as a cleaning medium to remove pollutant particles on the surface of the wafer through its unique physical properties. Specifically, carbon dioxide will turn into dry ice snow at low temperatures. This dry ice snow has extremely high surface energy and can adsorb and remove particles on the surface of the wafer. At the same time, since carbon dioxide is a gas, it is easy to volatilize at room temperature and pressure, thus avoiding the risk of secondary pollution. In addition, carbon dioxide is cheap, easy to obtain, non-toxic, chemically stable, and not easy to burn. It is a safe and environmentally friendly cleaning medium. However, the temperature of dry ice snow particles in low-temperature cleaning is very low, and sublimation will occur in the cleaning chamber and absorb a large amount of heat, causing the temperature in the cleaning chamber to drop, and even frosting or ice will occur. At the same time, the pipes and nozzles that spray dry ice snow particles will also be blocked due to ice, thereby affecting the subsequent wafer cleaning effect. Summary of the invention

[0004] In view of this, the present invention provides a wafer cleaning device and a cleaning method to solve the problem that the inside of the cleaning chamber is prone to ice formation and the nozzle is prone to clogging during low-temperature carbon dioxide cleaning, thereby affecting the cleaning effect.

[0005] In the first aspect, the present invention provides a wafer cleaning device, comprising: a cleaning chamber, a first cleaning component and a purge component, the cleaning chamber is suitable for accommodating wafers; the first cleaning component is connected to the cleaning chamber through a first delivery pipeline, the first cleaning component is suitable for spraying dry ice snow particles onto the wafers in the cleaning chamber; the purge component comprises a first gas tank and a heating structure, the first gas tank is suitable for accommodating purge gas, the heating structure is arranged in the first gas tank and is used to heat the purge gas; the purge component is used to connect to the first delivery pipeline to pass the heated purge gas into the cleaning chamber along the first delivery pipeline.

[0006] Beneficial effect: In the wafer cleaning equipment of this embodiment, the wafer to be cleaned is placed in the cleaning chamber, and the first cleaning component is connected to the cleaning chamber through the first conveying pipeline, so that dry ice snow particles are sprayed along the first conveying pipeline to the upper surface of the wafer in the cleaning chamber, and the nano-scale particle contaminants on the surface of the wafer are physically removed under the action of the high-speed impact and low-temperature effect of the dry ice snow particles; after the dry ice snow particle cleaning is completed and the wafer is taken out, the second switch valve on the first conveying pipeline is closed, and the heating structure located in the first gas tank in the purge component heats the purge gas, and the third switch valve at the outlet of the first gas tank is opened, so that the heated purge gas in the first gas tank enters the first conveying pipeline, and is passed into the cleaning chamber along the first conveying pipeline, so as to remove the dry ice snow particles remaining in the first conveying pipeline and the outlet end to prevent blockage. At the same time, the heated gas entering the cleaning chamber can adjust the temperature in the cleaning chamber to ensure the cleaning effect of subsequent wafers.

[0007] In an optional embodiment, the first cleaning component includes:

[0008] A first liquid storage tank, wherein the first liquid storage tank is suitable for containing liquid carbon dioxide;

[0009] A pre-treatment component, the inlet end of the pre-treatment component is connected to the first liquid storage tank, and the outlet end is connected to the first delivery pipeline; the pre-treatment component includes a pre-treatment chamber, a pre-treatment pipeline located in the pre-treatment chamber, and a temperature control structure and a pressure control structure arranged on the pre-treatment pipeline, the temperature control device and the pressure control device are suitable for converting liquid carbon dioxide in the pre-treatment pipeline into dry ice snow particles, and passing them into the cleaning chamber through the first delivery pipeline.

[0010] Beneficial effects: A pretreatment chamber is provided in the pretreatment component to accommodate the pretreatment pipeline, the temperature control structure and the pressure control structure, so as to realize the protection of these structures; the liquid carbon dioxide contained in the first liquid storage tank enters into the pretreatment pipeline in the pretreatment chamber, and the temperature control structure and the pressure control structure adjust the temperature and pressure of the liquid carbon dioxide, so that the liquid carbon dioxide maintains a relatively high pressure state before entering the cleaning chamber from the first delivery pipeline, and then rapidly expands from the high pressure state at the outlet end of the first delivery pipeline to the low pressure in the cleaning chamber to form dry ice snow particles, and the dry ice snow particles generate a strong physical impact force on the surface of the wafer, so as to physically remove the nano-scale particle contaminants on the surface of the wafer.

[0011] In an optional embodiment, the pre-treatment component further includes: a filtering structure, which is disposed on the pre-treatment pipeline and is disposed close to the inlet end of the pre-treatment pipeline relative to the temperature control structure and the pressure control structure.

[0012] Beneficial effect: The filtering structure is arranged at the inlet end of the pre-treatment pipeline to purify and filter the liquid carbon dioxide entering the pre-treatment pipeline. The high-purity liquid carbon dioxide is more likely to form dry ice snow particles of uniform size and regular shape during the spraying process, thereby improving the cleaning effect and efficiency.

[0013] In an optional embodiment, the first cleaning component also includes:

[0014] A first flow regulating structure is disposed on the first conveying pipeline and is disposed close to the pre-treatment component; the first flow regulating structure is suitable for regulating the injection flow of the dry ice snow particles output from the first cleaning component;

[0015] A connecting pipeline is arranged between the first liquid storage tank and the pre-treatment component; and arranged on the connecting pipeline:

[0016] A first switch valve, the first switch valve is arranged close to the first liquid storage tank;

[0017] A flow detection structure, suitable for detecting the flow of liquid carbon dioxide in the connecting pipeline;

[0018] A pressure detection structure, suitable for detecting the pressure of the connecting pipeline;

[0019] The temperature detection structure is suitable for detecting the temperature of the connecting pipeline.

[0020] Beneficial effects: liquid carbon dioxide is stored in the first liquid storage tank, and the flow of liquid carbon dioxide into the pre-treatment pipeline is controlled by opening and closing of the first switch valve arranged on the connecting pipeline. The flow detection structure and the pressure detection structure are used to detect the flow state of the liquid carbon dioxide in the connecting pipeline. The pressure detection structure and the temperature detection structure detect the instantaneous temperature and pressure of the liquid carbon dioxide before entering the pre-treatment pipeline, thereby providing a numerical reference for the temperature control and pressure control in the pre-treatment chamber, thereby ensuring that the liquid carbon dioxide can form dry ice snow particles when it flows out of the pre-treatment pipeline and is sprayed into the cleaning chamber along the first delivery pipeline; the first flow regulating structure is arranged on the side of the first delivery pipeline close to the outlet end of the pre-treatment pipeline.

[0021] In an optional embodiment, the size of the dry ice snow particles ranges from 1 μm to 20 μm.

[0022] Beneficial effect: The dry ice snow particles of the present invention are formed by directly converting liquid carbon dioxide into tiny solid particles. Compared with the conventional scheme of compressing and cooling carbon dioxide gas to form larger dry ice particles (usually 0.25mm-0.5mm), the dry ice snow particles in the present invention with a size range of 1μm-20μm are smaller and suitable for the field of precision cleaning.

[0023] In an optional embodiment, it also includes: a second cleaning component, which is connected to the cleaning chamber through a second delivery pipeline; the second cleaning component includes a second liquid storage tank and a second flow regulating structure, the second liquid storage tank contains cleaning liquid, and the cleaning liquid includes an aqueous solution dissolved with carbon dioxide gas; the second flow regulating structure is arranged on the second delivery pipeline and is arranged close to the second liquid storage tank.

[0024] Beneficial effects: The second liquid storage tank stores the cleaning liquid, and the second flow control structure controls the flow rate of the cleaning liquid outflow; the cleaning liquid of the second cleaning component is an aqueous solution dissolved with carbon dioxide gas. After the carbon dioxide gas is dissolved in water, it can reduce the resistivity of the water, increase its conductivity, and avoid electrostatic discharge; in addition, carbon dioxide can also remove oxygen from the water, reduce the dissolved oxygen content in the water, and reduce the possibility of oxidation on the wafer surface. Therefore, the second cleaning component performs the first cleaning liquid cleaning on the wafer surface before dry ice snow cleaning, which can remove static electricity and prevent oxidation on the wafer surface; after the dry ice snow particles are cleaned, the second cleaning component uses a small amount of cleaning liquid to clean the wafer surface for the second time, remove the dry ice snow particles remaining on the wafer surface, and avoid affecting the subsequent drying process.

[0025] In an optional embodiment, the method further includes: a first drying component connected to the cleaning chamber through a third delivery pipeline; the first drying component includes a third liquid storage tank and a third flow regulating structure, and the third liquid storage tank contains a drying liquid; the third flow regulating structure is arranged on the third delivery pipeline and is arranged close to the third liquid storage tank;

[0026] The second drying component is connected to the cleaning chamber through the fourth delivery pipeline; the second drying component includes a second gas storage tank and a fourth flow regulating structure, and the second gas storage tank contains drying gas; the fourth flow regulating structure is arranged on the fourth delivery pipeline and is arranged close to the second gas storage tank.

[0027] Beneficial effects: The present invention arranges the first drying component and the second drying component to realize various methods of drying liquid and gas for the cleaned wafers through different conveying pipelines, and flow regulating structures are arranged for both the drying liquid and the drying gas to accurately control the output volume, thereby ensuring the drying effect on the wafers.

[0028] In an optional embodiment, the cleaning chamber further comprises:

[0029] A carrying platform, which is rotatably arranged and suitable for carrying wafers;

[0030] A first swing arm, wherein the first end of the first swing arm is fixed on the cleaning chamber, and the second end of the first swing arm is rotatably arranged above the supporting platform; the first swing arm is hollow inside to accommodate the output end of the first conveying pipeline;

[0031] A first spraying member is disposed on the second end of the first swing arm and is connected to the first conveying pipeline to spray dry ice snow particles onto the surface of the wafer; the first spraying member is adapted to adjust its relative position with the wafer under the drive of the first swing arm;

[0032] A second swing arm, wherein the first end of the second swing arm is fixed on the cleaning chamber, and the second end is rotatably disposed above the supporting platform; the interior of the second swing arm is hollow to accommodate the output ends of the second conveying pipeline, the third conveying pipeline, and the fourth conveying pipeline;

[0033] The injection assembly includes a second injection component, a third injection component and a fourth injection component; the injection assembly is arranged on the second end of the second swing arm, and the second injection component is connected to the second conveying pipeline, the third injection component is connected to the third conveying pipeline, and the fourth injection component is connected to the fourth conveying pipeline; the injection assembly is suitable for moving between directly above and the edge of the wafer under the drive of the second swing arm.

[0034] Beneficial effects: The carrier platform for carrying the wafer in the present invention is rotatable, so the wafer is in rotation during the wafer cleaning and drying process, ensuring that all parts of the wafer can be cleaned and dried; the first swing arm is located at one end of the carrier platform and can drive the first injection component to adjust the injection position and injection angle; the second swing arm is located at one end of the carrier platform and can drive the injection component to change its position, thereby changing the injection position of the cleaning liquid, drying liquid and drying gas. In addition, during the drying process, after the drying liquid and drying gas are sprayed in the central part for a period of time, the second swing arm moves to the edge position, which can ensure that isopropyl alcohol and nitrogen are more evenly distributed on the wafer surface, which helps to remove residues on the wafer surface, reduce impact and friction on the center of the wafer, and avoid isopropyl alcohol and residues accumulating in the center of the wafer and causing damage.

[0035] In a second aspect, the present invention further provides a wafer cleaning method, using the above-mentioned wafer cleaning device, comprising the following steps:

[0036] The first cleaning component sprays dry ice snow particles onto the surface of the wafer in the cleaning chamber through the first delivery pipeline;

[0037] The purge component passes the purge gas heated by the heating structure into the cleaning chamber through the first delivery pipeline.

[0038] Beneficial effect: Liquid carbon dioxide flows out from the first cleaning component and is sprayed into the cleaning chamber through the first delivery pipeline, completing efficient cleaning of contaminants on the wafer surface; after the wafer is taken out, a heated purge gas is set to be sprayed into the cleaning chamber through the same first delivery pipeline, which can clear the dry ice and snow particles in the first delivery pipeline and the injection port to prevent blockage, and at the same time, the heated purge gas can be injected into the cleaning chamber, and the temperature in the cleaning chamber is adjusted to rise, so as to avoid affecting the subsequent wafer cleaning.

[0039] In an optional embodiment, before the first cleaning component sprays dry ice snow particles onto the surface of the wafer in the cleaning chamber through the first delivery pipeline, the second cleaning component also includes: spraying the aqueous solution containing carbon dioxide gas in the second liquid storage tank onto the wafer through the second delivery pipeline;

[0040] After the first cleaning component sprays dry ice snow particles onto the wafer surface in the cleaning chamber through the first delivery pipeline, and before the purge component passes the purge gas heated by the heating structure into the cleaning chamber through the first delivery pipeline, the method further includes:

[0041] The second cleaning component sprays the aqueous solution containing carbon dioxide gas in the second liquid storage tank onto the wafer again through the second delivery pipeline to remove the dry ice snow particles remaining on the wafer;

[0042] The first drying component sprays the drying liquid onto the surface of the wafer through the third delivery pipeline;

[0043] After the first drying component sprays drying liquid for a period of time, the second drying component sprays drying gas onto the surface of the wafer with drying liquid through the fourth delivery pipeline, and the first drying component and the second drying component close to one end of the wafer gradually move from directly above the wafer to the edge position.

[0044] Beneficial effects: The wafer cleaning method of the present invention comprises: using an aqueous solution containing carbon dioxide gas for pre-cleaning to remove static electricity and prevent oxidation on the wafer surface, using dry ice snow particles for high-precision cleaning of micro-nano particles on the wafer surface, using an aqueous solution containing carbon dioxide gas for post-cleaning to remove dry ice snow particles remaining on the wafer surface, using isopropanol solution and nitrogen to dry the wafer surface, and using heated purge gas to remove dry ice snow particles remaining in the pipeline and nozzle to prevent blockage, while adjusting the temperature of the cleaning chamber to make its temperature rise again to avoid affecting subsequent wafer cleaning and ensure the cleaning effect and cleaning efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0045] In order to more clearly illustrate the specific implementation methods of the present invention or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0046] Figure 1 is a schematic structural diagram of a wafer cleaning device according to an embodiment of the present invention;

[0047] Figure 2is a schematic structural diagram of a pre-processing component according to an embodiment of the present invention;

[0048] Figure 3 is a schematic structural diagram of a cleaning chamber according to an embodiment of the present invention;

[0049] Figure 4 is a schematic flow chart of a wafer cleaning method according to an embodiment of the present invention;

[0050] Figure 5 It is another flow chart of the wafer cleaning method according to an embodiment of the present invention.

[0051] Description of reference numerals:

[0052] 100. Wafer;

[0053] 1. Cleaning chamber; 101. Carrying platform; 102. First swing arm; 103. First spraying member; 104. Second swing arm; 105. Second spraying member; 106. Third spraying member; 107. Fourth spraying member;

[0054] 2. First cleaning component; 201. First liquid storage tank; 202. Pre-treatment component; 2021. Pre-treatment chamber; 2022. Pre-treatment pipeline; 2023. Temperature control structure; 2024. Pressure control structure; 2025. Filter structure; 203. First flow regulating structure; 204. Connecting pipeline; 205. First switch valve; 206. Flow detection structure; 207. Pressure detection structure; 208. Temperature detection structure;

[0055] 3. First delivery pipeline; 301. Second switch valve;

[0056] 4. Purge assembly; 401. First gas storage tank; 402. Heating structure; 403. Third switch valve;

[0057] 5. Second cleaning component; 501. Second liquid storage tank; 502. Second flow regulating structure;

[0058] 6. The second delivery pipeline;

[0059] 7. First drying component; 701. Third liquid storage tank; 702. Third flow regulating structure;

[0060] 8. The third delivery pipeline;

[0061] 9. Second drying component; 901. Second gas storage tank; 902. Fourth flow regulating structure;

[0062] 10. The fourth delivery pipeline. DETAILED DESCRIPTION

[0063] The present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It is understood that the specific embodiments described herein are only used to explain the present invention, rather than to limit the present invention. It should also be noted that, for ease of description, only some structures related to the present invention are shown in the accompanying drawings, rather than all structures. In the following description, the description of known structures and technologies is omitted to avoid unnecessary confusion of the concept of the present invention. Various structural schematic diagrams according to embodiments of the present invention are shown in the accompanying drawings. These figures are not drawn to scale, and some details are magnified for the purpose of clear expression, and some details may be omitted. The shapes of various regions and layers shown in the figures and the relative sizes and positional relationships between them are only exemplary, and may be deviated due to manufacturing tolerances or technical limitations in practice, and those skilled in the art may additionally design regions / layers with different shapes, sizes, and relative positions according to actual needs. In the context of the present invention, when a layer / element is referred to as being "on" another layer / element, the layer / element may be directly on the other layer / element, or there may be an intermediate layer / element between them. In addition, if a layer / element is "on" another layer / element in one orientation, then when the orientation is reversed, the layer / element may be "below" the other layer / element.

[0064] The wafer cleaning process is a crucial link in the manufacture of semiconductor devices and integrated circuits. Clean wafers are an important prerequisite for the preparation of high-performance semiconductor devices. The traditional cleaning process uses SC-1 solution to remove organic pollutants and particulate pollutants on the surface of the wafer. SC-1 solution is the No. 1 solution used in the semiconductor RCA standard cleaning, usually called SC-1 or APM solution. It is a mixture of water, ammonia and hydrogen peroxide in proportion. This solution will cause certain chemical corrosion to the surface of the wafer, and the removal effect of inorganic pollutants and fine particles is not ideal. After cleaning, a large amount of carbon dioxide water is required to clean the surface of the wafer. If the waste liquid is not handled properly, it will cause serious environmental pollution. Based on this, low-temperature carbon dioxide cleaning came into being.

[0065] Carbon dioxide has low-temperature characteristics. When it is cooled under constant pressure and reaches a critical temperature, it will become a colorless, odorless, non-toxic, and non-flammable liquid. By pressurizing liquid carbon dioxide, it will expand rapidly at the nozzle end and turn into a solid state, forming fine dry ice snow particles. The high-speed sprayed dry ice snow particles hit the surface of the wafer, generating a strong impact force, stripping off impurities such as stains and particles on the surface of the wafer. This method avoids the introduction of SC-1 solution during the cleaning process, consuming a large amount of scarce water resources, and easily causing environmental pollution. However, the temperature of the dry ice snow particles in low-temperature carbon dioxide cleaning is very low, and sublimation will occur in the cleaning chamber to absorb a large amount of heat, resulting in frost or ice in the cleaning chamber. The pipes and nozzles may also freeze and cause blockage, which will have a certain impact on the subsequent wafer cleaning effect.

[0066] Therefore, the present invention provides a wafer cleaning device and a cleaning method, in which a purge component is arranged to perform heated gas purge after low-temperature carbon dioxide cleaning, thereby solving the problems of poor effect of SC-1 solution in removing fine particles, large consumption of water resources and easy environmental pollution in the cleaning process of existing chemical mechanical polishing (CMP) equipment. At the same time, it also provides a solution to the problems of cleaning chamber icing and nozzle clogging occurring in low-temperature carbon dioxide cleaning.

[0067] refer to Figures 1 to 3 The present embodiment provides a wafer cleaning device, comprising: a cleaning chamber 1, a first cleaning component 2 and a purge component 4, wherein the cleaning chamber 1 is suitable for accommodating a wafer 100; the first cleaning component 2 is connected to the cleaning chamber 1 through a first delivery pipeline 3, and the first cleaning component 2 is suitable for spraying dry ice snow particles onto the wafer 100 in the cleaning chamber 1; the purge component 4 comprises a first gas storage tank 401 and a heating structure 402, wherein the first gas storage tank 401 is suitable for accommodating a purge gas, and the heating structure 402 is arranged in the first gas storage tank 401 and is used for heating the purge gas; the purge component 4 is used for connecting to the first delivery pipeline 3 to pass the heated purge gas into the cleaning chamber 1 along the first delivery pipeline 3.

[0068] Specifically, the wafer 100 to be cleaned is placed in the cleaning chamber 1, and the first cleaning component 2 is connected to the cleaning chamber 1 through the first conveying pipeline 3, so that the dry ice snow particles are sprayed along the first conveying pipeline 3 to the upper surface of the wafer 100 in the cleaning chamber 1, and the nano-scale particle contaminants on the surface of the wafer 100 are physically removed under the action of the high-speed impact and low-temperature effect of the dry ice snow particles; after the dry ice snow particle cleaning is completed and the wafer 100 is taken out, the second switch valve 301 on the first conveying pipeline 3 is closed, and the heating structure 401 in the first gas storage tank 401 of the purge component 4 is opened. 02 Heat the purge gas. The temperature range of the purge gas after heating is 20℃~40℃. The third switch valve 403 at the outlet of the first gas tank 401 is opened, so that the heated purge gas in the first gas tank 401 enters the first delivery pipeline 3 from the outlet end of the first gas tank 401, and enters the cleaning chamber 1 along the first delivery pipeline 3 to remove the dry ice and snow particles remaining in the first delivery pipeline 3 and the outlet end to prevent blockage. At the same time, the heated gas entering the cleaning chamber 1 can adjust the temperature in the cleaning chamber 1 to ensure the cleaning effect of the subsequent wafers.

[0069] The wafer cleaning equipment of this embodiment is suitable for cleaning wafers of various materials, including but not limited to silicon oxide wafers, gallium nitride wafers, silicon carbide wafers and silicon nitride wafers. The purge gas of this embodiment is selected from gases with little temperature influence and high purity, such as nitrogen or helium, to clean the first delivery pipeline 3, the injection outlet and the cleaning chamber 1, and avoid the residual dry ice snow particles from affecting the wafer cleaning effect and introducing new impurities; the operating temperature range of the entire wafer cleaning equipment of this embodiment is -100℃~40℃, and the operating pressure range is 1bar-100bar.

[0070] In one embodiment, reference Figure 1 and Figure 2 The above-mentioned first cleaning component 2 includes: a first liquid storage tank 201 and a pre-treatment component 202, the first liquid storage tank 201 is suitable for accommodating liquid carbon dioxide; the inlet end of the pre-treatment component 202 is connected to the first liquid storage tank 201, and the outlet end is connected to the first delivery pipeline 3; the pre-treatment component 202 includes a pre-treatment chamber 2021, a pre-treatment pipeline 2022 located in the pre-treatment chamber 2021, and a temperature control structure 2023 and a pressure control structure 2024 arranged on the pre-treatment pipeline 2022, the temperature control device and the pressure control device are suitable for converting the liquid carbon dioxide in the pre-treatment pipeline 2022 into dry ice snow particles, and passing them into the cleaning chamber 1 through the first delivery pipeline 3.

[0071] Specifically, a pretreatment chamber 2021 is provided in the pretreatment component 202 to accommodate a pretreatment pipeline 2022, a temperature control structure 2023 and a pressure control structure 2024, so as to protect these structures; the liquid carbon dioxide contained in the first liquid storage tank 201 enters into the pretreatment pipeline 2022 in the pretreatment chamber 2021, and the temperature control structure 2023 and the pressure control structure 2024 adjust the temperature and pressure of the liquid carbon dioxide, so that the liquid carbon dioxide maintains a relatively high pressure state before entering the cleaning chamber 1 from the first delivery pipeline 3, and then rapidly expands from the high pressure state at the outlet end of the first delivery pipeline 3 to the low pressure in the cleaning chamber 1 to form dry ice snow particles, and the dry ice snow particles generate a strong physical impact force on the surface of the wafer 100, so as to physically remove the nano-scale particle contaminants on the surface of the wafer 100.

[0072] Furthermore, the pre-treatment component 202 further includes: a filtering structure 2025 , which is disposed on the pre-treatment pipeline 2022 and is disposed close to the inlet end of the pre-treatment pipeline 2022 relative to the temperature control structure 2023 and the pressure control structure 2024 .

[0073] The filtering structure 2025 of this embodiment is arranged on the inlet end of the pre-treatment pipeline 2022 to purify and filter the liquid carbon dioxide entering the pre-treatment pipeline 2022. The high-purity liquid carbon dioxide is more likely to form dry ice snow particles of uniform size and regular shape during the injection process, thereby improving the cleaning effect and efficiency.

[0074] Exemplarily, the above-mentioned filtering structure 2025 includes but is not limited to a gravity sedimentation filtering structure 2025, a pressure filtering structure 2025, an adsorption filtering structure 2025 and a filtering membrane, etc. On this basis, the temperature control structure 2023 provided on the pre-treatment pipeline 2022 controls the temperature of the filtered and purified liquid carbon dioxide to between minus 100°C and minus 70°C, and the pressure control structure 2024 controls the pressure of the filtered and purified liquid carbon dioxide to between 15 bar and 100 bar.

[0075] In one embodiment, the first cleaning component 2 also includes: a first flow regulating structure 203, a connecting pipeline 204, and a first switch valve 205 arranged on the connecting pipeline 204, a flow detection structure 206, a pressure detection structure 207 and a temperature detection structure 208. The first flow regulating structure 203 is arranged on the first conveying pipeline 3 and is arranged close to the pre-treatment component 202. The first flow regulating structure 203 is suitable for adjusting the injection flow of dry ice snow particles output from the first cleaning component 2; the connecting pipeline 204 is arranged between the first liquid storage tank 201 and the pre-treatment component 202; the first switch valve 205 is arranged close to the first liquid storage tank 201; the flow detection structure 206 is suitable for detecting the flow of liquid carbon dioxide in the connecting pipeline 204; the pressure detection structure 207 is suitable for detecting the pressure of the connecting pipeline 204; the temperature detection structure 208 is suitable for detecting the temperature of the connecting pipeline 204.

[0076] Specifically, liquid carbon dioxide is stored in the first liquid storage tank 201, and the opening and closing of the first switch valve 205 arranged on the connecting pipeline 204 controls the flow of liquid carbon dioxide into the pretreatment pipeline 2022. The flow detection structure 206 and the pressure detection structure 207 are used to detect the flow state of liquid carbon dioxide in the connecting pipeline 204. The pressure detection structure 207 and the temperature detection structure 208 detect the instantaneous temperature and pressure of the liquid carbon dioxide before entering the pretreatment pipeline 2022, thereby providing a numerical reference for the temperature control and pressure control in the pretreatment chamber 2021, thereby ensuring that the liquid carbon dioxide can form dry ice snow particles when it flows out of the pretreatment pipeline 2022 and is sprayed into the cleaning chamber 1 along the first conveying pipeline 3; the first flow regulating structure 203 is arranged on one side of the first conveying pipeline 3 close to the outlet end of the pretreatment pipeline 2022.

[0077] Exemplarily, the flow detection structure 206 may be a flow meter, the pressure detection structure 207 may be a pressure gauge, the temperature detection structure 208 may be a temperature gauge, and the first flow regulating structure 203 may be a flow regulating valve.

[0078] The size of the dry ice snow particles in this embodiment ranges from 1 μm to 20 μm. Such dry ice snow particles are obtained by directly converting liquid carbon dioxide into tiny solid particles. Compared with the conventional scheme of compressing and cooling carbon dioxide gas to form larger dry ice particles (usually 0.25 mm to 0.5 mm), the dry ice snow particles in this embodiment are smaller and suitable for the field of precision cleaning.

[0079] Based on the above scheme, refer to Figure 1 The wafer 100 cleaning equipment of this embodiment also includes a second cleaning component 5, which is connected to the cleaning chamber 1 through a second delivery pipeline 6. The second cleaning component 5 includes a second liquid storage tank 501 and a second flow regulating structure 502. The second liquid storage tank 501 contains a cleaning liquid, and the cleaning liquid includes an aqueous solution dissolved with carbon dioxide gas; the second flow regulating structure 502 is arranged on the second delivery pipeline 6 and is arranged close to the second liquid storage tank 501.

[0080] Specifically, the second liquid storage tank 501 stores the cleaning liquid, and the second flow control structure controls the flow rate of the cleaning liquid outflowing; the cleaning liquid of the second cleaning component 5 is an aqueous solution dissolved with carbon dioxide gas. After the carbon dioxide gas is dissolved in water, it can reduce the resistivity of the water, increase its conductivity, and avoid electrostatic discharge; in addition, carbon dioxide can also remove oxygen from the water, reduce the dissolved oxygen content in the water, and reduce the possibility of oxidation on the surface of the wafer 100. Therefore, the second cleaning component 5 performs the first cleaning liquid cleaning on the surface of the wafer 100 before the dry ice snow cleaning, which can remove the static electricity and prevent oxidation on the surface of the wafer 100; after the dry ice snow particles are cleaned, the second cleaning component 5 uses a small amount of cleaning liquid to clean the surface of the wafer 100 for the second time, remove the dry ice snow particles remaining on the surface of the wafer 100, and avoid affecting the subsequent drying process.

[0081] When the second cleaning component 5 performs the first cleaning with the cleaning liquid, the flow rate range of the cleaning liquid is 1200ml / min~2000ml / min, and the cleaning time range is 8-15s; when the second cleaning liquid is performed, the flow rate range of the cleaning liquid is 500ml / min~1000ml / min, and the cleaning time range is 5-10s.

[0082] like Figure 1As shown, the wafer cleaning equipment also includes: a first drying component 7 and a second drying component 9, the first drying component 7 is connected to the cleaning chamber 1 through a third delivery pipeline 8, the first drying component 7 includes a third liquid storage tank 701 and a third flow regulating structure 702, the third liquid storage tank 701 is filled with dry liquid, the third flow regulating structure 702 is arranged on the third delivery pipeline 8, and is arranged close to the third liquid storage tank 701; the second drying component 9 is connected to the cleaning chamber 1 through a fourth delivery pipeline 10, the second drying component 9 includes a second gas storage tank 901 and a fourth flow regulating structure 902, the second gas storage tank 901 is filled with dry gas, the fourth flow regulating structure 902 is arranged on the fourth delivery pipeline 10, and is arranged close to the second gas storage tank 901.

[0083] Specifically, the drying liquid in the first drying component 7 may be isopropanol, and the drying gas in the second drying component 9 may be nitrogen. The first drying component 7 and the second drying component 9 are arranged to realize the drying of the cleaned wafer 100 in various ways of liquid and gas through different conveying pipelines, and flow regulating structures are arranged for both the drying liquid and the drying gas to accurately control the output, thereby ensuring the drying effect on the wafer 100. Preferably, in this embodiment, the drying liquid is first used for drying alone, and the flow range of the isopropanol drying liquid in this process is 100ml / min to 200ml / min, and then the drying liquid and the drying gas are dried together, and finally the drying gas is dried alone and blown off, ensuring that the drying liquid fully covers the wafer 100 and realizes liquid film replacement, thereby improving the drying effect.

[0084] like Figure 3As shown, the cleaning chamber 1 also includes: a carrier 101, a first swing arm 102, a first spraying member 103, a second swing arm 104 and a spraying assembly. The carrier 101 can be rotatably arranged, that is, the carrier 101 is a rotatable carrying device and is suitable for carrying the wafer 100; the first end of the first swing arm 102 is fixed on the cleaning chamber 1, and the second end is rotatably arranged above the carrier 101, and the first swing arm 102 is hollow inside to accommodate the output end of the first conveying pipeline 3; the first spraying member 103 is arranged on the second end of the first swing arm 102 and is connected to the first conveying pipeline 3 to spray dry ice snow particles onto the surface of the wafer 100, and the first spraying member 103 is suitable for adjusting the contact with the wafer 1 under the drive of the first swing arm 102. 00; the first end of the second swing arm 104 is fixed on the cleaning chamber 1, and the second end is rotatably arranged above the carrier 101, the interior of the second swing arm 104 is hollow to accommodate the output ends of the second conveying pipeline 6, the third conveying pipeline 8 and the fourth conveying pipeline 10; the injection assembly includes a second injection component 105, a third injection component 106 and a fourth injection component 107, the injection assembly is arranged on the second end of the second swing arm 104, and the second injection component 105 is connected to the second conveying pipeline 6, the third injection component 106 is connected to the third conveying pipeline 8, and the fourth injection component 107 is connected to the fourth conveying pipeline 10, and the injection assembly is suitable for moving between directly above and the edge of the wafer 100 under the drive of the second swing arm 104.

[0085] refer to Figure 3The carrier 101 carrying the wafer 100 is rotatable, so the wafer 100 is in horizontal rotation during the cleaning and drying process of the wafer 100, ensuring that all parts of the wafer 100 can be cleaned and dried. The rotation speed of the wafer 100 in the cleaning process ranges from 300rpm to 800rpm. During the drying process, when the spray assembly sweeps from the center to the edge of the wafer 100, the rotation speed of the wafer 100 gradually decreases, for example, from 1200rpm to 400rpm. The first end of the first swing arm 102 is fixed in the cleaning chamber 1 to be set on the carrier On one side of the carrier 101, the first conveying pipeline 3 is located at one end of the cleaning chamber 1 and extends into the first swing arm 102. The first injection component 103 is arranged on the second end of the first swing arm 102 located above the carrier 101 to communicate with the first conveying pipeline 3. The first injection component 103 is used to spray the liquid carbon dioxide in the first conveying pipeline 3 onto the surface of the wafer 100 in the cleaning chamber 1 in the form of dry ice snow particles. The first injection component 103 at the second end of the first swing arm 102 can rotate along the horizontal plane, thereby changing the injection position of the dry ice snow particles. Similarly, the first end of the second swing arm 104 is fixed in the cleaning chamber 1 to be arranged on the other side of the carrier 101, the second delivery pipeline 6, the third delivery pipeline 8 and the fourth delivery pipeline 10 at one end of the cleaning chamber 1 all extend into the second swing arm 104, the second injection component 105, the third injection component 106 and the fourth injection component 107 are all arranged on the second end of the second swing arm 104 above the carrier 101 to be connected with the second delivery pipeline 6, the third delivery pipeline 8 and the fourth delivery pipeline 10 respectively, the second injection component 105 is used to spray the aqueous solution containing carbon dioxide gas in the second delivery pipeline 6 onto the surface of the wafer 100, the third injection component 106 is used to spray the drying liquid in the third delivery pipeline 8 onto the surface of the wafer 100, and the fourth injection component 107 is used to spray the drying gas in the fourth delivery pipeline 10 onto the surface of the wafer 100, and the injection assembly at the second end of the second swing arm 104 can rotate along the horizontal plane to change the injection position of the cleaning liquid, the drying liquid and the drying gas.

[0086] In this embodiment, the first injection member 103 is configured as a nozzle to ensure that the particle size of the dry ice snow particles is small enough and the impact force is large enough. The spray speed of the dry ice snow particles ranges from 5m / s to 60m / s, the diameter of the sprayed dry ice snow particles ranges from 1μm to 20μm, the distance between the nozzle and the upper surface of the wafer 100 ranges from 0.2cm to 3cm, the cleaning time is 10-25s, the angle formed by the axis of the nozzle and the surface of the wafer 100 is adjustable in the range of 25° to 90°, preferably 30° to 60°, and the nozzle diameter ranges from 1mm to 10mm, preferably 3mm-6mm. The second injection member 105, the third injection member 106 and the fourth injection member 107 in the injection assembly are all configured as nozzles. In addition, the spray assembly of the present embodiment is located directly above the wafer 100 before spraying begins, that is, corresponding to the center of the wafer 100; during the drying process, after spraying the drying liquid and the drying gas in the center for a period of time, it can be moved to the edge to ensure that the isopropyl alcohol and the nitrogen are more evenly distributed on the surface of the wafer 100, which helps to remove the residue on the surface of the wafer 100 and reduce the impact and friction on the center of the wafer 100; if the nozzle always stays in the center of the wafer 100 for purging, isopropyl alcohol and residues may accumulate in the center of the wafer 100, causing damage.

[0087] refer to Figures 1 to 4 As shown, this embodiment also provides a wafer cleaning method, using the above-mentioned wafer cleaning equipment, Figure 4 FIG. 5 is a flow chart of a wafer cleaning method according to an embodiment of the present invention. The method comprises:

[0088] In step S401 , the first cleaning component 2 sprays dry ice snow particles onto the surface of the wafer 100 in the cleaning chamber 1 through the first delivery pipeline 3 .

[0089] Exemplarily, liquid carbon dioxide is stored in a first liquid storage tank 201, and the fluid flows into a pre-treatment pipeline 2022 of a pre-treatment component 202 through the opening and closing control of a first on-off valve. The liquid carbon dioxide is purified by a filtering structure 2025 in the pre-treatment component 202, and the temperature and pressure of the purified liquid carbon dioxide are adjusted by a temperature control structure 2023 and a pressure control structure 2024. The flow rate entering the first delivery pipeline 3 is controlled by a first flow regulating structure 203, and the position of the first injection component 103 is controlled by a first swing arm 102. The liquid carbon dioxide rapidly expands from the high pressure in the first injection component 103 to the low pressure in the cleaning chamber 1 to form dry ice snow particles. The dry ice snow particles are sprayed onto the upper surface of the wafer 100 placed on the carrier 101, generating a strong physical impact force to physically remove nano-scale particle contaminants on the surface of the wafer 100.

[0090] In this embodiment, the wafer 100 is in a rotating state in the cleaning chamber 1, and the rotation speed range of the wafer 100 during the cleaning process is 300rpm-800rpm; the spraying speed range of dry ice snow particles is 5m / s~60m / s, the diameter range of the sprayed dry ice snow particles is 1μm~20μm, the distance range between the first injection component 103 and the upper surface of the wafer 100 is 0.2cm~3cm, the cleaning time is 10-25s, the angle formed by the axis of the first injection component 103 and the surface of the wafer 100 is adjustable in the range of 25°~90°, preferably 30°~60°, and the diameter range of the first injection component 103 is 1mm~10mm, preferably 3mm-6mm.

[0091] In step S402 , the purge assembly 4 passes the purge gas heated by the heating structure 402 into the cleaning chamber 1 through the first delivery pipeline 3 .

[0092] Exemplarily, the second on-off valve at the outlet of the pre-treatment pipeline 2022 is closed, and the third on-off valve at the outlet of the first gas tank 401 is opened. The purge gas heated by the heating structure 402 flows out from the first gas tank 401, and is ejected from the first injection member 103 along the first delivery pipeline 3, so as to remove the dry ice and snow particles remaining in the first delivery pipeline 3 and the first injection member 103 of the liquid carbon dioxide to prevent blockage. At the same time, the heated purge gas enters the cleaning chamber 1 to adjust the temperature in the cleaning chamber 1, thereby reducing the impact on the cleaning effect of the next wafer. In this embodiment, the temperature range of the heated purge gas is 20°C to 40°C.

[0093] In this embodiment, liquid carbon dioxide flows out from the first cleaning component 2 and is sprayed into the cleaning chamber 1 through the first delivery pipeline 3, thereby completing the efficient cleaning of the contaminants on the surface of the wafer 100. After that, after the wafer 100 is taken out, a heated purge gas is set to be sprayed into the cleaning chamber 1 through the same first delivery pipeline 3. While clearing the dry ice and snow particles in the first delivery pipeline 3 and the injection port to prevent blockage, the heated purge gas can also be injected into the cleaning chamber 1, and the temperature in the cleaning chamber 1 is adjusted to rise, thereby avoiding affecting the subsequent cleaning of the wafer 100.

[0094] refer to Figure 5 The complete wafer cleaning method of this embodiment includes the following steps:

[0095] In step S501 , the second cleaning component 5 sprays the aqueous solution containing carbon dioxide gas in the second liquid storage tank 501 onto the wafer 100 through the second delivery pipeline 6 .

[0096] Exemplarily, the second cleaning component 5 performs a first cleaning liquid cleaning on the surface of the wafer 100 before the dry ice snow particle cleaning, which can remove static electricity and anti-oxidation on the surface of the wafer 100. The flow rate of the cleaning liquid in this step ranges from 1200ml / min to 2000ml / min, and the cleaning time ranges from 8 to 15s. It should be known that the carrier 101 starts to drive the wafer 100 to rotate before the wafer 100 starts to be cleaned, and the rotation speed of the wafer 100 during the cleaning process ranges from 300rpm to 800rpm.

[0097] In step S502 , the first cleaning component 2 sprays dry ice snow particles onto the surface of the wafer 100 in the cleaning chamber 1 through the first delivery pipeline 3 .

[0098] Liquid carbon dioxide is stored in the first liquid storage tank 201, and the fluid flows into the pre-treatment pipeline 2022 of the pre-treatment component 202 through the opening and closing control of the first on-off valve. The liquid carbon dioxide is purified by the filtering structure 2025 in the pre-treatment component 202, and then the temperature and pressure of the purified liquid carbon dioxide are adjusted by the temperature control structure 2023 and the pressure control structure 2024. The flow rate entering the first conveying pipeline 3 is controlled by the first flow regulating structure 203, and the first swing arm 102 controls the position of the first injection component 103. The liquid carbon dioxide rapidly expands from the high pressure in the first injection component 103 to the low pressure in the cleaning chamber 1 to form dry ice snow particles. The dry ice snow particles are sprayed onto the upper surface of the wafer 100 placed on the carrier 101, generating a strong physical impact force to physically remove nano-scale particle contaminants on the surface of the wafer 100.

[0099] The spraying speed of dry ice snow particles ranges from 5m / s to 60m / s, the diameter of the sprayed dry ice snow particles ranges from 1μm to 20μm, the distance between the first injection component 103 and the upper surface of the wafer 100 ranges from 0.2cm to 3cm, the cleaning time is 10-25s, the angle formed by the axis of the first injection component 103 and the surface of the wafer 100 is adjustable in the range of 25° to 90°, preferably 30° to 60°, and the diameter of the first injection component 103 ranges from 1mm to 10mm, preferably 3mm-6mm.

[0100] In step S503 , the second cleaning component 5 sprays the aqueous solution containing carbon dioxide gas in the second liquid storage tank 501 onto the wafer 100 again through the second delivery pipeline 6 to remove the dry ice snow particles remaining on the wafer 100 .

[0101] Exemplarily, after the dry ice snow particles are cleaned, the second cleaning component 5 uses a small amount of cleaning liquid to clean the surface of the wafer 100 for the second time, removing the residual dry ice snow particles on the surface of the wafer 100 to avoid affecting the subsequent drying process. The flow rate of the cleaning liquid in this step ranges from 500ml / min to 1000ml / min, and the cleaning time ranges from 5 to 10s.

[0102] In step S504 , the first drying component 7 sprays the drying liquid onto the surface of the wafer 100 through the third delivery pipeline 8 .

[0103] In this embodiment, isopropanol solution is used in the drying process of the drying liquid alone, and the flow rate range of the drying liquid is 100 ml / min to 200 ml / min.

[0104] In step S505, after the first drying component 7 sprays the drying liquid for a period of time, the second drying component 9 sprays the drying gas onto the surface of the wafer 100 having the drying liquid through the fourth delivery pipeline 10, and the first drying component 7 and the second drying component 9 close to the wafer 100 gradually move from directly above the wafer 100 to the edge position.

[0105] In this embodiment, after the isopropyl alcohol solution is sprayed for a period of time to cover the surface of the wafer 100, the spraying of the drying gas is turned on, and the spraying of the drying liquid is not stopped at this time, that is, the spraying of the drying liquid and the drying gas is carried out simultaneously. In this process, when the drying liquid and the drying gas are swept from the center to the edge of the wafer 100, the rotation speed of the wafer 100 is gradually reduced from 1200rpm to 400rpm, and the drying process of the wafer 100 is completely completed. After that, the wafer 100 is taken out from the cleaning chamber 1 using a structure such as a robot.

[0106] In step S506 , the purge assembly 4 passes the purge gas heated by the heating structure 402 into the cleaning chamber 1 through the first delivery pipeline 3 .

[0107] Exemplarily, the second on-off valve at the outlet of the pretreatment pipeline 2022 is closed, and the third on-off valve at the outlet of the first gas tank 401 is opened. The purge gas heated by the heating structure 402 flows out from the first gas tank 401, and is ejected from the first injection member 103 along the first delivery pipeline 3, so as to remove the dry ice and snow particles remaining in the first delivery pipeline 3 and the first injection member 103 of the liquid carbon dioxide to prevent blockage. At the same time, the heated purge gas enters the cleaning chamber 1 to adjust the temperature in the cleaning chamber 1, thereby reducing the impact on the cleaning effect of the next wafer 100. In this embodiment, the temperature range of the heated purge gas is 20°C to 40°C.

[0108] The wafer cleaning method of this embodiment includes: using an aqueous solution containing carbon dioxide gas for pre-cleaning to remove static electricity and prevent oxidation on the surface of the wafer 100, using dry ice snow particles to perform high-precision cleaning of micro-nano particles on the surface of the wafer 100, using an aqueous solution containing carbon dioxide gas for post-cleaning to remove dry ice snow particles remaining on the surface of the wafer 100, using isopropyl alcohol solution and nitrogen gas to dry the surface of the wafer 100, and using heated purge gas to remove dry ice snow particles remaining in the pipeline and nozzle to prevent clogging, and at the same time adjusting the temperature of the cleaning chamber 1 to make its temperature rise to avoid affecting the subsequent cleaning of the wafer 100 and ensure the cleaning effect and cleaning efficiency.

[0109] The further functional description of each of the above structures is the same as that of the above corresponding embodiments and will not be repeated here.

[0110] It should be understood that, although the various embodiments are described separately above, this does not mean that the measures in the various embodiments cannot be used in combination to advantage.

[0111] Although the embodiments of the present invention have been described in conjunction with the accompanying drawings, those skilled in the art may make various modifications and variations without departing from the spirit and scope of the present invention, and such modifications and variations are all within the scope defined by the appended claims.

Claims

1. A wafer cleaning device, characterized in that: include: a cleaning chamber, wherein the cleaning chamber is suitable for accommodating a wafer; a first cleaning component, connected to the cleaning chamber through a first delivery pipeline, the first cleaning component being suitable for spraying dry ice snow particles onto the wafers in the cleaning chamber; The purge assembly includes a first gas tank and a heating structure. The first gas tank is suitable for accommodating the purge gas. The heating structure is arranged in the first gas tank and is used to heat the purge gas. The purge assembly is used to connect to the first delivery pipeline to introduce the heated purge gas into the cleaning chamber along the first delivery pipeline.

2. The wafer cleaning equipment according to claim 1, characterized in that: The first cleaning component comprises: a first liquid storage tank, wherein the first liquid storage tank is suitable for containing liquid carbon dioxide; A pre-treatment component, wherein the inlet end of the pre-treatment component is connected to the first liquid storage tank, and the outlet end is connected to the first delivery pipeline; the pre-treatment component includes a pre-treatment chamber, a pre-treatment pipeline located in the pre-treatment chamber, and a temperature control structure and a pressure control structure arranged on the pre-treatment pipeline, and the temperature control device and the pressure control device are suitable for converting the liquid carbon dioxide in the pre-treatment pipeline into dry ice snow particles, and passing them into the cleaning chamber through the first delivery pipeline.

3. The wafer cleaning equipment according to claim 2, characterized in that: The pre-processing component also includes: A filtering structure is arranged on the pre-treatment pipeline and is arranged close to the inlet end of the pre-treatment pipeline relative to the temperature control structure and the pressure control structure.

4. The wafer cleaning equipment according to claim 3, characterized in that: The first cleaning component also includes: A first flow regulating structure is disposed on the first delivery pipeline and is disposed close to the pre-treatment component; the first flow regulating structure is suitable for regulating the injection flow of the dry ice snow particles output from the first cleaning component; A connecting pipeline, arranged between the first liquid storage tank and the pre-treatment component; and arranged on the connecting pipeline: a first switch valve, wherein the first switch valve is disposed close to the first liquid storage tank; A flow detection structure, adapted to detect the flow of liquid carbon dioxide in the connecting pipeline; A pressure detection structure, suitable for detecting the pressure of the connecting pipeline; The temperature detection structure is suitable for detecting the temperature of the connecting pipeline.

5. The wafer cleaning equipment according to claim 1, characterized in that: The size of the dry ice snow particles ranges from 1 μm to 20 μm.

6. The wafer cleaning equipment according to any one of claims 1 to 5, characterized in that: Also includes: The second cleaning component is connected to the cleaning chamber through a second delivery pipeline; the second cleaning component includes a second liquid storage tank and a second flow regulating structure, the second liquid storage tank contains cleaning liquid, and the cleaning liquid includes an aqueous solution dissolved with carbon dioxide gas; the second flow regulating structure is arranged on the second delivery pipeline and is arranged close to the second liquid storage tank.

7. The wafer cleaning equipment according to claim 6, characterized in that: Also includes: a first drying component, connected to the cleaning chamber through a third delivery pipeline; the first drying component comprises a third liquid storage tank and a third flow regulating structure, the third liquid storage tank contains a drying liquid; the third flow regulating structure is arranged on the third delivery pipeline and is arranged close to the third liquid storage tank; The second drying component is connected to the cleaning chamber through a fourth delivery pipeline; the second drying component includes a second gas storage tank and a fourth flow regulating structure, and the second gas storage tank contains drying gas; the fourth flow regulating structure is arranged on the fourth delivery pipeline and is arranged close to the second gas storage tank.

8. The wafer cleaning equipment according to claim 7, characterized in that: The cleaning chamber also includes: A carrying platform, the carrying platform is rotatably arranged and is suitable for carrying a wafer; a first swing arm, wherein a first end of the first swing arm is fixed on the cleaning chamber, and a second end of the first swing arm is rotatably disposed above the supporting platform; the first swing arm is hollow inside to accommodate an output end of the first conveying pipeline; a first spraying member, disposed on the second end of the first swing arm and connected to the first conveying pipeline, so as to spray dry ice snow particles onto the surface of the wafer; the first spraying member is adapted to adjust its relative position with respect to the wafer under the drive of the first swing arm; a second swing arm, wherein a first end of the second swing arm is fixed to the cleaning chamber, and a second end of the second swing arm is rotatably disposed above the supporting platform; the interior of the second swing arm is hollow to accommodate the output ends of the second conveying pipeline, the third conveying pipeline, and the fourth conveying pipeline; An injection assembly includes a second injection component, a third injection component and a fourth injection component; the injection assembly is arranged on the second end of the second swing arm, and the second injection component is connected to the second conveying pipeline, the third injection component is connected to the third conveying pipeline, and the fourth injection component is connected to the fourth conveying pipeline; the injection assembly is suitable for moving between directly above and the edge of the wafer under the drive of the second swing arm.

9. A wafer cleaning method, using the wafer cleaning device according to any one of claims 1 to 8, characterized in that: include: The first cleaning component sprays dry ice snow particles onto the surface of the wafer in the cleaning chamber through a first delivery pipeline; The purge assembly passes the purge gas heated by the heating structure into the cleaning chamber through the first delivery pipeline.

10. The wafer cleaning method according to claim 9, characterized in that: Before the first cleaning component sprays dry ice snow particles onto the surface of the wafer in the cleaning chamber through the first delivery pipeline, the second cleaning component also includes: spraying the aqueous solution containing carbon dioxide gas in the second liquid storage tank onto the wafer through the second delivery pipeline; After the first cleaning component sprays dry ice snow particles onto the wafer surface in the cleaning chamber through the first delivery pipeline, and before the purge component passes the purge gas heated by the heating structure into the cleaning chamber through the first delivery pipeline, the method further includes: The second cleaning component sprays the aqueous solution containing carbon dioxide gas in the second liquid storage tank onto the wafer again through the second delivery pipeline to remove the dry ice snow particles remaining on the wafer; The first drying component sprays the drying liquid onto the surface of the wafer through the third delivery pipeline; After the first drying component sprays the drying liquid for a period of time, the second drying component sprays the drying gas onto the surface of the wafer having the drying liquid through the fourth delivery pipeline, and the first drying component and the second drying component gradually move from directly above the wafer to the edge position close to one end of the wafer.

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