Pixel unit, image sensor, camera module, electronic device and shooting method

Abstract

The present application discloses a pixel unit, an image sensor, a camera module, an electronic device and a shooting method, which are applied to the technical field of electronic equipment. The pixel unit includes: a photodiode, a first transmission gate transistor, a hole collection circuit, a second transmission gate transistor and an electron collection circuit; the positive electrode of the photodiode is connected to the hole collection circuit through the first transmission gate transistor, and the hole collection circuit is used to collect holes generated by the photodiode and convert the holes into hole voltage; the negative electrode of the photodiode is connected to the electron collection circuit through the second transmission gate transistor, and the electron collection circuit is used to collect photoelectrons generated by the photodiode and convert the photoelectrons into photoelectric voltage.

Description

Technical Field

[0001] The present application belongs to the technical field of electronic equipment, and specifically relates to a pixel unit, an image sensor, a camera module, an electronic device, and a shooting method. Background Art

[0002] With the development of technology, image sensors are widely used in camera modules of electronic devices. Currently, most image sensors in camera modules of electronic devices use Quad Bayer array sensors. In related technologies, the circuit of each pixel unit in an image sensor includes: a photodiode, a transfer gate transistor, and an electron collection circuit. The positive electrode of the photodiode is grounded, and the negative electrode of the photodiode is connected to the electron collection circuit via the transfer gate transistor. The electron collection circuit is used to collect photoelectrons generated by the photodiode and convert them into a photoelectric voltage.

[0003] However, since the photodiode of each pixel unit in the image sensor is essentially a PN junction, when light shines on the photodiode, the photodiode generates negatively charged photoelectrons and positively charged holes at the same time. The electron collection circuit of each pixel unit in the related art can only collect the negatively charged photoelectrons generated by the photodiode, and the positively charged holes will be absorbed by the earth, wasting the positive information generated by the photodiode. Summary of the Invention

[0004] The purpose of the embodiments of the present application is to provide a pixel unit, an image sensor, a camera module, an electronic device and a shooting method, which can collect photoelectrons and holes generated by a photodiode, thereby avoiding the waste of positive electrical information generated by the photodiode.

[0005] In a first aspect, an embodiment of the present application provides a pixel unit, comprising: a photodiode, a first transfer gate transistor, a hole collection circuit, a second transfer gate transistor, and an electron collection circuit;

[0006] The anode of the photodiode is connected to the hole collection circuit through the first transmission gate transistor, and the hole collection circuit is used to collect holes generated by the photodiode and convert the holes into hole voltage;

[0007] The cathode of the photodiode is connected to the electron collection circuit through the second transfer gate transistor, and the electron collection circuit is used to collect photoelectrons generated by the photodiode and convert the photoelectrons into photoelectric voltage;

[0008] In which, the hole collection circuit includes: a first reset switch transistor, a first storage capacitor, a first source follower and a first row selection switch transistor; the positive electrode of the photodiode is connected to the negative electrode of the first DC power supply through the first transmission gate transistor and the first reset switch transistor, and the positive electrode of the photodiode is grounded through the first transmission gate transistor and the first storage capacitor; the first storage capacitor is connected to the negative electrode of the first DC power supply through the first source follower, the first storage capacitor is connected to the negative electrode of the first DC power supply through the first reset switch transistor, and the first storage capacitor is connected to the first row selection switch transistor through the first source follower; the first row selection switch transistor is used to output the hole voltage converted by the hole collection circuit.

[0009] In a second aspect, an embodiment of the present application provides an image sensor comprising: a plurality of quad-Bayer pixel arrays, each quad-Bayer pixel array comprising four pixel groups, each pixel group comprising the four pixel units in the first aspect arranged in a 2×2 manner; the four photodiodes of the four pixel units in each pixel group share a hole collection circuit and an electron collection circuit.

[0010] In a third aspect, an embodiment of the present application provides a camera module, which includes the image sensor in the second aspect.

[0011] In a fourth aspect, an embodiment of the present application provides an electronic device, comprising a processor and the camera module described in the third aspect.

[0012] In a fifth aspect, an embodiment of the present application provides a photographing method, which is performed by the electronic device according to the fourth aspect, and the method includes:

[0013] The processor controls at least one pixel unit of each pixel group of the image sensor to perform photoelectric conversion according to the operating mode of the image sensor of the camera module, thereby obtaining a hole voltage and a photoelectric voltage of each pixel group; the hole voltage is a voltage converted by a hole collection circuit of the pixel group, and the photoelectric voltage is a voltage converted by an electron collection circuit of the pixel group;

[0014] The processor converts the hole voltage of each pixel group into a hole pixel value of each pixel group, and converts the photoelectric voltage of each pixel group into a photoelectric pixel value of each pixel group;

[0015] The processor performs imaging based on the hole pixel value and the photoelectric pixel value of each pixel group and outputs an image.

[0016] In a sixth aspect, an embodiment of the present application provides an electronic device comprising a processor, a memory, and an image sensor, wherein the memory stores programs or instructions that can be run on the processor, and when the programs or instructions are executed by the processor, the steps of the shooting method described in the fifth aspect are implemented.

[0017] In a seventh aspect, an embodiment of the present application provides a readable storage medium, on which a program or instruction is stored. When the program or instruction is executed by a processor, the steps of the shooting method described in the fifth aspect are implemented.

[0018] In an eighth aspect, an embodiment of the present application provides a chip, which includes a processor and a communication interface, wherein the communication interface is coupled to the processor, and the processor is used to run a program or instruction to implement the steps of the shooting method described in the fifth aspect.

[0019] In a ninth aspect, an embodiment of the present application provides a computer program product, which is stored in a storage medium and is executed by at least one processor to implement the steps of the shooting method as described in the fifth aspect.

[0020] In some embodiments of the present application, the pixel unit includes: a photodiode, a first transmission gate transistor, a hole collection circuit, a second transmission gate transistor and an electron collection circuit; the positive electrode of the photodiode is connected to the hole collection circuit through the first transmission gate transistor, and the hole collection circuit is used to collect holes generated by the photodiode and convert the holes into a hole voltage; the negative electrode of the photodiode is connected to the electron collection circuit through the second transmission gate transistor, and the electron collection circuit is used to collect photoelectrons generated by the photodiode and convert the photoelectrons into a photoelectric voltage; wherein the hole collection circuit includes: a first reset switch transistor, a first storage capacitor, a first source follower and a first row selection switch transistor; the positive electrode of the photodiode is connected to the negative electrode of the first DC power supply through the first transmission gate transistor and the first reset switch transistor, and the positive electrode of the photodiode is grounded through the first transmission gate transistor and the first storage capacitor; the first storage capacitor is connected to the negative electrode of the first DC power supply through the first source follower, the first storage capacitor is connected to the negative electrode of the first DC power supply through the first reset switch transistor, and the first storage capacitor is connected to the first row selection switch transistor through the first source follower; the first row selection switch transistor is used to output the hole voltage converted by the hole collection circuit.

[0021] In some embodiments of the present application, since a first transfer gate transistor and a hole collection circuit are added to the circuit of the pixel unit, the photodiode of the pixel unit can transfer the generated positively charged holes to the hole collection circuit through the first transfer gate transistor, and the hole collection circuit can collect and store the positively charged holes generated by the photodiode, thereby avoiding the waste of positive information generated by the photodiode.

[0022] In some embodiments of the present application, the image sensor includes: multiple quad-Bayer pixel arrays, each quad-Bayer pixel array includes four pixel groups, each pixel group includes four pixel units arranged in a 2×2 manner; the four photodiodes of the four pixel units in each pixel group share a hole collection circuit and an electron collection circuit.

[0023] In some embodiments of the present application, since each pixel group in the image sensor has a hole collection circuit and an electron collection circuit, the hole collection circuit can collect and store the positively charged holes generated by the photodiodes in the pixel group, and the electron collection circuit can collect and store the negatively charged photoelectrons generated by the photodiodes in the pixel group, thereby avoiding the waste of positive information generated by the photodiodes and doubling the sensitivity of the image sensor.

[0024] In some embodiments of the present application, the camera module includes the above-mentioned image sensor.

[0025] In some embodiments of the present application, since the sensitivity of the above-mentioned image sensor is doubled, when the camera module is used for image capture, the sensitivity can be increased in night scene mode, and the captured image has higher brightness but lower noise, so that the image brightness can be increased without excessive digital gain, thereby optimizing the night scene capture effect.

[0026] In some embodiments of the present application, the electronic device includes a processor and the above-mentioned camera module.

[0027] In some embodiments of the present application, since the above-mentioned camera module adopts a high-sensitivity image sensor, when shooting night scene images based on the high-sensitivity image sensor, it can capture night scene images with higher brightness but lower noise.

[0028] In some embodiments of the present application, the processor of the electronic device controls at least one pixel unit of each pixel group of the image sensor to perform photoelectric conversion according to the working mode of the image sensor of the camera module, and obtains a hole voltage and a photoelectric voltage of each pixel group; the hole voltage is the voltage converted by the hole collection circuit of the pixel group, and the photoelectric voltage is the voltage converted by the electron collection circuit of the pixel group; the processor converts the hole voltage of each pixel group into a hole pixel value of each pixel group, and converts the photoelectric voltage of each pixel group into a photoelectric pixel value of each pixel group; the processor performs imaging based on the hole pixel value and the photoelectric pixel value of each pixel group, and outputs an image.

[0029] In some embodiments of the present application, since when the electronic device is shooting through a camera module, each pixel group of the image sensor of the camera module has a hole collection circuit and an electron collection circuit, the hole collection circuit can collect and store the positively charged holes generated by the photodiodes in the pixel group, and the electron collection circuit can collect and store the negatively charged photoelectrons generated by the photodiodes in the pixel group. Therefore, the positive and negative information generated by the photodiodes can be fully utilized, so that the voltage signal amount read by the processor from the image sensor of the camera module is doubled, and imaging is performed based on the read voltage signal amount, thereby improving the image quality of the imaged image. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 is an example diagram of a quad-Bayer pixel array provided by some embodiments of the present application;

[0031] Figure 2 is a circuit diagram of a pixel unit provided in some embodiments of the present application;

[0032] Figure 3 is a circuit diagram of a pixel unit provided in some embodiments of the present application;

[0033] Figure 4A is a circuit diagram of an image sensor provided by some embodiments of the present application;

[0034] Figure 4B is an example diagram of a quad-Bayer pixel array provided by some embodiments of the present application;

[0035] Figure 5 is a circuit diagram of each pixel group of an image sensor provided by some embodiments of the present application;

[0036] Figure 6 is a circuit diagram of each pixel group of an image sensor provided by some embodiments of the present application;

[0037] Figure 7 is a schematic structural diagram of a camera module provided in some embodiments of the present application;

[0038] Figure 8 is a schematic structural diagram of an electronic device provided by some embodiments of the present application;

[0039] Figure 9 is a flowchart of a shooting method provided by some embodiments of the present application;

[0040] Figure 10 is a flowchart of an implementation of step 901 provided in some embodiments of the present application;

[0041] Figure 11 is a flowchart of an implementation of step 901 provided in some embodiments of the present application;

[0042] Figure 12 is a structural block diagram of a photographing device provided by some embodiments of the present application;

[0043] Figure 13 is a schematic structural diagram of an electronic device provided by some embodiments of the present application;

[0044] Figure 14 It is a schematic diagram of the hardware structure of the electronic device provided in some embodiments of the present application.

[0045] Description of reference numerals:

[0046] PD-photodiode; PD0-photodiode; PD1-photodiode; PD2-photodiode; PD3-photodiode; TG h -First transmission gate transistor; TG h1 -First transmission gate transistor; TG h2 -First transmission gate transistor; TG h3 -First transmission gate transistor; TG h4 -First transmission gate transistor; TG e - Second transmission gate transistor; TG e1 - Second transmission gate transistor; TG e2 - Second transmission gate transistor; TG e3 - Second transmission gate transistor; TG e4 -Second transmission gate transistor; C1-hole collection circuit; C2-electron collection circuit; RST h -First reset switch transistor; FD h - a first storage capacitor; SF h -First source follower; RSL h -First row select switch transistor; RST e - Second reset switch transistor; FD e - Second storage capacitor; SF e-Second source follower; RSL e - Second row select switch transistor; VDD h -First DC power supply; VDD e - A second DC power supply. DETAILED DESCRIPTION

[0047] The following will be combined with the accompanying drawings in the embodiments of this application to clearly describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field are within the scope of protection of this application.

[0048] The terms "first", "second", etc. in the specification and claims of this application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable under appropriate circumstances, so that the embodiments of the present application can be implemented in an order other than those illustrated or described here, and the objects distinguished by "first", "second", etc. are generally of one type, and the number of objects is not limited. For example, the first object can be one or more. In addition, "and / or" in the specification and claims represents at least one of the connected objects, and the character " / " generally indicates that the objects associated before and after are in an "or" relationship. The identifiers in this application are text, symbols, images, etc. used to indicate information, and controls or other containers can be used as carriers for displaying information, including but not limited to text identifiers, symbol identifiers, and image identifiers.

[0049] To facilitate understanding, some concepts involved in the embodiments of this application are first introduced.

[0050] Quad Bayer array is a special pixel arrangement. The 16 pixel units arranged in a quad Bayer array are called a quad Bayer pixel array. Figure 1 As shown, a quad-Bayer pixel array 10 is shown, which includes: four pixel groups arranged in 2×2, wherein the pixel group in the first row and first column is a red (Red, R) pixel group 11, the pixel group in the first row and second column is a green (Green, G) pixel group 12, the pixel group in the second row and first column is a green pixel group 13, and the pixel group in the second row and second column is a blue (Blue, B) pixel group 14; the red pixel group 11 includes: four R pixel units arranged in 2×2, the green pixel group 12 and the green pixel group 13 both include: four G pixel units arranged in 2×2, and the blue pixel group 14 includes: four B pixel units arranged in 2×2.

[0051] A photodiode is a semiconductor device with a PN junction or PIN structure, primarily used for light detection. It is highly sensitive to changes in light and can convert optical signals into electrical signals. A photodiode typically contains a PN junction and may have an intrinsic layer (I layer) between the N layer and the P layer. This structure is called a PIN photodiode. When light impinges on this structure, photoelectron-hole pairs are generated in the depletion region or intrinsic region. These photoelectron-hole pairs contribute to the photocurrent, which is proportional to the absorbed light intensity.

[0052] A transmission gate (TG) is a bidirectional switch composed of NMOS and PMOS transistors, primarily used for signal exchange and transmission in digital circuits. It selectively transmits input signals by controlling the on / off switching of signals based on externally applied logic levels.

[0053] A reset switch transistor (RST) is a special transistor whose primary function is to reset or initialize the state of a circuit or system. In digital circuits, transistors are often used to implement logic gates, and a reset switch transistor is used to reset the state of a circuit or system to its initial state.

[0054] A storage capacitor is an electronic component used to store charge and energy. It consists of two conductive plates separated by an insulating medium, typically air, plastic, or ceramic.

[0055] A source follower (SF) is a field-effect transistor circuit, also known as a common-source circuit or voltage follower. Its primary function is to provide high input impedance and low output impedance, making it suitable for applications such as signal amplification, buffering, and driving.

[0056] A row selection switch transistor (RSST) is a switching element used in electronic devices, primarily for controlling the selection of a specific row in a circuit. It achieves this function by controlling the on / off flow of current.

[0057] Figure 2 is a circuit diagram of a pixel unit provided in some embodiments of the present application, such as Figure 2 As shown, a pixel unit includes: a photodiode PD, a first transmission gate transistor TG h , hole collection circuit C1, second transmission gate transistor TG e and electronic collection circuit C2.

[0058] The anode of the photodiode PD passes through the first transmission gate transistor TG h It is connected to the hole collection circuit C1, which is used to collect holes generated by the photodiode PD and convert the holes into hole voltage.

[0059] The photodiode PD is used to convert light signals into electrical signals. When light shines on the photodiode PD, the photodiode PD generates positively charged holes and negatively charged photoelectrons.

[0060] The first transmission gate transistor TG h It plays the role of a switch between the photodiode PD and the hole collection circuit C1; when the first transmission gate transistor TG h When switched to the off state, the holes generated by the photodiode PD cannot be transferred to the hole collection circuit C1; when the first transfer gate transistor TG h When switched to the on state, the holes generated by the photodiode PD can be transferred to the hole collection circuit C1.

[0061] The cathode of the photodiode PD passes through the second transmission gate transistor TG e It is connected to the electron collection circuit C2, which is used to collect photoelectrons generated by the photodiode PD and convert the photoelectrons into photoelectric voltage.

[0062] The second transmission gate transistor TG e It plays the role of a switch between the photodiode PD and the electron collection circuit C2. When the second transmission gate transistor TG e When switched to the off state, the photoelectrons generated by the photodiode PD cannot be transmitted to the electron collection circuit C2; when the second transmission gate transistor TG e When switched to the on state, the photoelectrons generated by the photodiode PD can be transferred to the electron collection circuit C2.

[0063] The hole collection circuit C1 includes: a first reset switch transistor RST h , first storage capacitor FD h , the first source follower SF h and the first row select switch transistor RSL h .

[0064] The anode of the photodiode PD passes through the first transmission gate transistor TG h and the first reset switch transistor RST h With the first DC power supply VDD h The positive electrode of the photodiode PD is connected to the negative electrode of the photodiode PD through the first transmission gate transistor TG. h and the first storage capacitor FD hGround.

[0065] The first storage capacitor FD h Used to store holes generated by the photodiode PD.

[0066] First DC power supply VDD h Used to provide power to the hole collection circuit C1. VDD h It is usually the negative electrode, for example, set to -2.8V.

[0067] The first transmission gate transistor TG h and the first reset switch transistor RST h , for the photodiode PD and the first DC power supply VDD h When the first transmission gate transistor TG h and the first reset switch transistor RST h When both are switched to the off state, the holes generated by the photodiode PD cannot flow out of the photodiode PD; when the first transmission gate transistor TG h and the first reset switch transistor RST h When both are switched to the on state, holes generated in the photodiode PD can flow out of the photodiode PD.

[0068] The first storage capacitor FD h Through the first source follower SF h With the first DC power supply VDD h The negative electrode of the first storage capacitor FD is connected h Through the first reset switch transistor RST h With the first DC power supply VDD h The negative electrode of the first storage capacitor FD is connected h Through the first source follower SF h With the first row select switch transistor RSL h connect.

[0069] First row selection switch transistor RSL h Used to output the hole voltage Vout converted by the hole collection circuit C1 h .

[0070] First reset switch transistor RST h For the first storage capacitor FD h With the first DC power supply VDD h The negative electrode of the transistor RST acts as a switch. h When switched to the off state, the first storage capacitor FD h The holes inside cannot flow out, and when the first reset switch transistor RSTh When switched to the on state, the first storage capacitor FD h The holes inside can flow out.

[0071] The first source follower SF h It is used to provide high input impedance and low output impedance so as to h The voltage of the holes stored in the source is followed and output. For example, the first source follower SF h The gain is 0.9x.

[0072] In some embodiments of the present application, a first transmission gate transistor and a hole collection circuit are added to the circuit of the pixel unit. The photodiode of the pixel unit can transmit the generated positively charged holes to the hole collection circuit via the first transmission gate transistor. The hole collection circuit can collect and store the positively charged holes generated by the photodiode, thereby avoiding the waste of positive information generated by the photodiode. In addition, the hole collection circuit of the pixel unit includes simple electronic components such as a first reset switch transistor, a first storage capacitor, a first source follower, and a first row select switch transistor. Because the cost of these electronic components is relatively low and the wiring connections between the electronic components are relatively simple, the use of the hole collection circuit structured as described above does not increase manufacturing costs.

[0073] Figure 3 is a circuit diagram of a pixel unit provided in some embodiments of the present application, such as Figure 3 As shown, the electron collection circuit C2 of the pixel unit may specifically include: a second reset switch transistor RST e , the second storage capacitor FD e , the second source follower SF e and the second row select switch transistor RSL e ;

[0074] The cathode of the photodiode PD passes through the second transmission gate transistor TG e and the second reset switch transistor RST e With the second DC power supply VDD e The positive electrode of the photodiode PD is connected to the negative electrode of the second transmission gate transistor TG. e and the second storage capacitor FD e Ground.

[0075] The second storage capacitor FD e Used to store photoelectrons generated by the photodiode PD.

[0076] Second DC power supply VDD e Used to provide electrical energy to the electronic collection circuit C2.

[0077] The second transmission gate transistor TG e and the second reset switch transistor RST e , used for the photodiode PD and the second DC power supply VDD e When the second transmission gate transistor TG e and the second reset switch transistor RST e When both are switched to the off state, the photoelectrons generated by the photodiode PD cannot flow out of the photodiode PD; when the second transmission gate transistor TG e and the second reset switch transistor RST e When both are switched to the on state, the photoelectrons generated by the photodiode PD can flow out from the photodiode PD.

[0078] The second storage capacitor FD e Through the second source follower SF e With the second DC power supply VDD e The positive electrode of the second storage capacitor FD is connected e Through the second reset switch transistor RST e With the second DC power supply VDD e The positive electrode of the second storage capacitor FD is connected e Through the second source follower SF e With the second row select switch transistor RSL e connect.

[0079] Second row selection switch transistor RSL e Used to output the photoelectric voltage Vout converted by the electron collection circuit C2 e .

[0080] Second reset switch transistor RST e For the second storage capacitor FD e With the second DC power supply VDD e The positive electrode of the second reset switch transistor RST plays the role of a switch. e When switched to the off state, the second storage capacitor FD e The photoelectrons inside cannot flow out, and when the second reset switch transistor RST e When switched to the on state, the second storage capacitor FD e The photoelectrons inside can flow out.

[0081] The second source follower SF e It is used to provide high input impedance and low output impedance so that the second storage capacitor FD e The voltage of the stored photoelectrons is followed by the output.

[0082] In some embodiments of the present application, the electron collection circuit of the pixel unit includes simple electronic devices such as a second reset switch transistor, a second storage capacitor, a second source follower, and a second row selection switch transistor. Since the above-mentioned electronic devices have low costs and the wiring connections between the electronic devices are relatively simple, the use of the electron collection circuit with the above-mentioned structure does not increase the manufacturing cost.

[0083] In some embodiments of the present application, the first transmission gate transistor is a P-type field effect transistor, and the second transmission gate transistor is an N-type field effect transistor. The above transistors have a relatively simple manufacturing process, a high yield, low power consumption, a relatively simple logic circuit, high integration, and strong anti-interference ability, and are particularly suitable for large-scale integrated circuits.

[0084] In some embodiments of the present application, an image sensor is provided, which may include: multiple quad-Bayer pixel arrays, each quad-Bayer pixel array includes four pixel groups, each pixel group includes four pixel units arranged in a 2×2 manner as described in any of the above pixel unit embodiments; the four photodiodes of the four pixel units in each pixel group share a hole collection circuit and an electron collection circuit.

[0085] For example, Figure 4A As shown, the image sensor 40 includes a quad-Bayer pixel array 41 in the first row and first column. In practical applications, the image sensor 40 may include multiple quad-Bayer pixel arrays 41 , and the number of the quad-Bayer pixel arrays 41 may be 5 million to 200 million.

[0086] In some embodiments of the present application, the number of quad-Bayer pixel arrays in the image sensor 40 can be set according to the pixel resolution of the image sensor 40. Generally, the number of quad-Bayer pixel arrays in low-end image sensors is 5 million, and the number of quad-Bayer pixel arrays in high-end image sensors is 50 million or even 200 million.

[0087] Take the four-Bayer pixel array 41 in the image sensor 40 as an example. Figure 4B As shown, the quad-Bayer pixel array 41 includes four pixel groups, namely pixel group 411, pixel group 412, pixel group 413 and pixel group 414, each pixel group includes 2×2 pixel units. For example, pixel group 411 includes four R pixel units arranged in a 2×2 matrix, pixel group 412 includes four G pixel units arranged in a 2×2 matrix, pixel group 413 includes four G pixel units arranged in a 2×2 matrix, and pixel group 414 includes four B pixel units arranged in a 2×2 matrix.

[0088] The four photodiodes of the four pixel units in each pixel group share one hole collection circuit and one electron collection circuit. Figure 5 As shown, the R pixel unit in the first row and first column includes: a photodiode PD0, a first transmission gate transistor TG h0 and the second transfer gate transistor TG e0 The R pixel unit in the first row and second column includes: a photodiode PD1, a first transmission gate transistor TG h1 and the second transfer gate transistor TG e1 The R pixel unit in the second row and first column includes: a photodiode PD2, a first transmission gate transistor TG h2 and the second transfer gate transistor TG e2 The R pixel unit in the second row and second column includes: a photodiode PD3, a first transmission gate transistor TG h3 and the second transfer gate transistor TG e3 The four R pixel units of the pixel group 411 share a hole collection circuit C1 and an electron collection circuit C2.

[0089] The hole collection circuit C1 includes: a first reset switch transistor RST h , first storage capacitor FD h , the first source follower SF h and the first row select switch transistor RSL h .

[0090] Photodiode PD i The positive electrode of the first transmission gate transistor TG hi Connected to the hole collection circuit C1, the photodiode PD i The negative electrode of the second transmission gate transistor TG ei Connected to the electron collection circuit C2, where 1≤i≤4.

[0091] Specifically, the photodiode PD i The positive electrode of the first transmission gate transistor TG hi and the first reset switch transistor RST h With the first DC power supply VDD h The negative connection of the photodiode PD i The positive electrode of the first transmission gate transistor TG hi and the first storage capacitor FD h Ground. The first storage capacitor FD h Through the first source follower SF h With the first DC power supply VDD h The negative electrode of the first storage capacitor FD is connected hThrough the first reset switch transistor RST h With the first DC power supply VDD h The negative electrode of the first storage capacitor FD is connected h Through the first source follower SF h With the first row select switch transistor RSL h Connection. First row select switch transistor RSL h Used to output the hole voltage Vout converted by the hole collection circuit C1 h .

[0092] For each R pixel unit, the first transmission gate transistor TG hi and the second transfer gate transistor TG ei Switching to the on state, the photodiode PD i The generated photoelectrons are transferred to the electron collection circuit C2 for storage, and the photodiode PD i The generated holes are transmitted to the hole collection circuit C2 for storage, so as to collect the photoelectrons and holes of the R pixel unit.

[0093] For example, if only the photoelectrons and holes of the R pixel unit in the first row and first column of the pixel group 411 are to be collected, the first transfer gate transistor TG of the R pixel unit in the first row and first column is set to h0 and the second transfer gate transistor TG e0 Switch to the on state, the first transfer gate transistors TG of the other three R pixel units h1 TG h2 TG h3 and the second transfer gate transistor TG e1 TG e2 TG e3 Switch to disconnected state.

[0094] For example, if you want to collect photoelectrons and holes from the two R pixel units in the first row of the pixel group 411, then the first transfer gate transistors TG of the two R pixel units in the first row are set to h0 TG h1 and the second transfer gate transistor TG e0 TG e1 Switch to the on state, the first transfer gate transistor TG of the two R pixel units in the second row h2 TG h3 and the second transfer gate transistor TG e2 TG e3 Switch to disconnected state.

[0095] For example, for Figure 5 The electron collection circuit C2 in the pixel group shown is Figure 6As shown, the electron collection circuit C2 may include: a second reset switch transistor RST e , the second storage capacitor FD e , the second source follower SF e and the second row select switch transistor RSL e .

[0096] Photodiode PD i The negative electrode of the second transmission gate transistor TG ei and the second reset switch transistor RST e With the second DC power supply VDD e The positive connection of the photodiode PD i The negative electrode of the second transmission gate transistor TG ei and the second storage capacitor FD e Grounded; wherein 1≤i≤4. Second storage capacitor FD e Through the second source follower SF e With the second DC power supply VDD e The positive electrode of the second storage capacitor FD is connected e Through the second reset switch transistor RST e With the second DC power supply VDD e The positive electrode of the second storage capacitor FD is connected e Through the second source follower SF e With the second row select switch transistor RSL e Connection. Second row select switch transistor RSL e Used to output the photoelectric voltage Vout converted by the electron collection circuit C2 e .

[0097] In some embodiments of the present application, since each pixel group in the image sensor has a hole collection circuit and an electron collection circuit, the hole collection circuit can collect and store positively charged holes generated by the photodiodes in the pixel group, and the electron collection circuit can collect and store negatively charged photoelectrons generated by the photodiodes in the pixel group, thereby avoiding the waste of positive information generated by the photodiodes and doubling the sensitivity of the image sensor.

[0098] Figure 7 is a schematic structural diagram of a camera module provided in some embodiments of the present application, such as Figure 7 As shown, the camera module 700 may include: the image sensor 701 in the above embodiment.

[0099] In some embodiments of the present application, in addition to the image sensor, the camera module also includes the following devices: a lens, a digital signal processor, a circuit board and other auxiliary components. Among them, the lens is used to focus light onto the image sensor, affecting the image quality and field of view. The choice of lens can be determined according to the shooting requirements, such as a wide-angle lens, a telephoto lens, a large aperture lens, etc. The digital signal processor is used to process the signal output by the image sensor to improve the image quality and clarity. The processing process includes denoising, color restoration, contrast enhancement, etc. The circuit board is a carrier that connects the above components together, usually including a printed circuit board or a flexible circuit board. Other auxiliary components, such as filters, infrared filters, optical image stabilization elements, etc.

[0100] In some embodiments of the present application, since the sensitivity of the above-mentioned image sensor is doubled, when the camera module is used for image capture, the sensitivity can be increased in night scene mode, and the captured image has higher brightness but lower noise, so that the image brightness can be increased without excessive digital gain, thereby optimizing the night scene capture effect.

[0101] Figure 8 is a schematic diagram of the structure of an electronic device provided by some embodiments of the present application, such as Figure 8 As shown, the electronic device 800 may include a processor 801 and the above-mentioned camera module 700; wherein, the processor 801 is used to control the camera module 700 to take pictures.

[0102] In some embodiments of the present application, since the camera module uses a high-sensitivity image sensor, when shooting night scene images based on the high-sensitivity image sensor, it can capture night scene images with higher brightness but lower noise.

[0103] Figure 9 is a flowchart of a shooting method provided by some embodiments of the present application, the method is applied to an electronic device, the electronic device includes a processor and the above-mentioned camera module, such as Figure 9 As shown, the method may include at least the following steps: step 901, step 902 and step 903.

[0104] In step 901, the processor controls at least one pixel unit of each pixel group of the image sensor to perform photoelectric conversion according to the working mode of the image sensor of the camera module, so as to obtain a hole voltage and a photoelectric voltage of each pixel group; wherein, the hole voltage is the voltage converted by the hole collection circuit of the pixel group, and the photoelectric voltage is the voltage converted by the electron collection circuit of the pixel group.

[0105] In some embodiments of the present application, the operating mode of the image sensor may include: a single-pixel unit shooting mode or a four-pixel unit focusing mode.

[0106] In some embodiments of the present application, the single-pixel unit shooting mode is used to shoot an image based on one pixel unit in each pixel group of the image sensor.

[0107] Exemplarily, the image sensor includes 10 million pixel groups. During shooting, only one pixel unit in each pixel group captures an image, and the remaining pixel units do not capture an image.

[0108] In some embodiments of the present application, since the four pixel units in each pixel group of the image sensor have the same color, in order to reduce shooting power consumption, during shooting, one pixel unit in each pixel group can be controlled to perform the shooting task, while the other pixel units do not perform the shooting task. The hole voltage generated by the pixel unit in each pixel group that performs the shooting task is determined as the hole voltage of the pixel group, and the photoelectric voltage generated by the pixel unit in each pixel group that performs the shooting task is determined as the photoelectric voltage of the pixel group. In addition, since the pixel unit in each pixel group that performs the shooting task can generate both hole voltage and photoelectric voltage, the total voltage signal is relatively high, and the quality of the image based on the voltage output based on the high signal is higher.

[0109] In some embodiments of the present application, the four-pixel unit focus mode is used to focus on all pixel units of each pixel group of the image sensor during image capture.

[0110] For example, the image sensor includes 10 million pixel groups. During focusing, four pixel units in each pixel group perform the focusing task.

[0111] In some embodiments of the present application, since the voltage generated by the two pixel units on one side of each pixel group and the voltage generated by the two pixel units on the other side are required for focusing, where when one side is the left side, the other side is the right side, and when one side is the right side, the other side is the left side, in order to ensure the focusing speed, it is necessary to control all pixel units in each pixel group to perform the focusing task, determine the hole voltage generated by the two pixel units on one side of each pixel group as the hole voltage of the pixel group, and determine the photoelectric voltage generated by the two pixel units on the other side of each pixel group as the photoelectric voltage of the pixel group. Since the hole voltage and photoelectric voltage of the same pixel group can be read in parallel, the focusing speed can be improved.

[0112] In step 902 , the processor converts the hole voltage of each pixel group into a hole pixel value of each pixel group, and converts the photoelectric voltage of each pixel group into a photoelectric pixel value of each pixel group.

[0113] Exemplarily, the image sensor includes 10 million pixel groups, each pixel group has a hole voltage and a photoelectric voltage, totaling 10 million hole voltages and 10 million photoelectric voltages. These 10 million hole voltages are converted into 10 million hole pixel values, and these 10 million photoelectric voltages are converted into 10 million photoelectric pixel values.

[0114] In some embodiments of the present application, the processor may input the hole voltage of each pixel group into an analog-to-digital converter, and convert the hole voltage of each pixel group into a hole pixel value of each pixel group through the analog-to-digital converter. Similarly, the processor may input the photoelectric voltage of each pixel group into an analog-to-digital converter, and convert the photoelectric voltage of each pixel group into a photoelectric pixel value of each pixel group through the analog-to-digital converter. Both the hole pixel value and the photoelectric pixel value are used to represent the attributes of the pixel point, such as brightness, grayscale, or color.

[0115] In step 903 , the processor performs imaging based on the hole pixel value and the photoelectric pixel value of each pixel group and outputs an image.

[0116] In some embodiments of the present application, when the working mode of the image sensor is a single-pixel unit shooting mode, the above-mentioned step 903 may include the following steps: step 9031.

[0117] In step 9031, the processor performs a sum operation on the hole pixel value and the photoelectric pixel value of each pixel group to obtain a total pixel value of each pixel group; and generates an image based on the total pixel value of each pixel group.

[0118] In some embodiments of the present application, interpolation processing can be performed based on the total pixel value of each pixel group of the image sensor, and demosaicing processing can be performed on the interpolation processing result. Bad pixel correction, color correction, illumination correction and geometric calibration can be performed on the demosaicing processing result to obtain an image.

[0119] In some embodiments of the present application, twice the native sensitivity can be achieved, and holes and photoelectrons appear in pairs, that is, the signal values ​​are exactly the same. The logic part adds the two to achieve twice the native sensitivity. In night scene mode, the sensitivity is improved. Since the front stage amplifies the signal twice, the noise performance is better than that in the state of single sensitivity. In addition, for night scenes, traditional image sensors can obtain very few photoelectrons. Even if the exposure is increased, the number of photoelectrons obtained is still small. The brightness of the native image is low, and the visual processor is required to process and brighten the image, but it also amplifies the noise. Therefore, very obvious jumping and flickering noise can be seen in night scenes. The root cause is that the visual processor applies too much digital gain and amplifies the noise. The native sensitivity of the image sensor under this architecture is twice that of the traditional image sensor, and the brightness of the native image obtained is twice that of the traditional image sensor. Therefore, there is no need for too much digital gain to increase the brightness, thereby optimizing the night scene shooting effect.

[0120] In some embodiments of the present application, when the working mode of the image sensor is the four-pixel unit focus mode, the above step 903 may include the following steps: step 9032.

[0121] In step 9032, the processor calculates phase information based on the hole pixel value and the photoelectric pixel value of each pixel group to obtain the focus parameters of the image sensor; controls the image sensor to focus according to the focus parameters and outputs an image.

[0122] In some embodiments of the present application, phase focusing is a technology that achieves rapid focusing by detecting phase difference. The core principle of phase focusing is to achieve focusing by finding the point of minimum phase difference. When an object is reflected by the lens, its light forms two sets of light paths on the image sensor. The camera module drives the focusing lens group to move until the two sets of light paths are focused on the image sensor.

[0123] In some embodiments of the present application, the processor calculates the minimum phase difference based on the hole pixel value and the photoelectric pixel value of each pixel group, and determines the minimum phase difference as the focus parameter of the image sensor.

[0124] In some embodiments of the present application, the processor first controls the image sensor to focus according to the focus parameters. After focusing is completed, the processor controls at least one pixel unit in each pixel group of the image sensor to perform photoelectric conversion, obtains the hole pixel value and the photoelectric pixel value of each pixel group, and performs a sum operation on the hole pixel value and the photoelectric pixel value of each pixel group to obtain the total pixel value of each pixel group; and generates an image based on the total pixel value of each pixel group.

[0125] In some embodiments of the present application, since the reading of holes and electrons is separate and does not interfere with each other, and the values ​​of electrons and holes are exactly the same, it is equivalent to parallel operation when focusing, and the left pixel values ​​and right pixel values ​​of the pixel array are read at the same time, thereby achieving an increase in the readout speed of about 2 times, and the frame rate is basically linearly related to the readout speed, so it is expected that the frame rate can be increased by 1.5 times to 2 times.

[0126] In some embodiments of the present application, since when the electronic device is shooting through a camera module, each pixel group of the image sensor of the camera module has a hole collection circuit and an electron collection circuit, the hole collection circuit can collect and store the positively charged holes generated by the photodiodes in the pixel group, and the electron collection circuit can collect and store the negatively charged photoelectrons generated by the photodiodes in the pixel group. Therefore, the positive and negative information generated by the photodiodes can be fully utilized, so that the voltage signal amount read by the processor from the image sensor of the camera module is doubled, and imaging is performed based on the read voltage signal amount, thereby improving the image quality of the imaged image.

[0127] In some embodiments of the present application, when the working mode of the image sensor is a single pixel unit shooting mode, as shown in FIG. Figure 10 As shown, the above step 901 may include the following steps: step 1001, step 1002, step 1003 and step 1004.

[0128] In step 1001 , before the image sensor is exposed to light, the processor controls the photodiode of the first pixel unit of each pixel group of the image sensor to clear stored holes and photoelectrons.

[0129] In some embodiments of the present application, the first pixel unit is a pixel unit in the pixel group that performs a shooting task. The first pixel unit may be specified by a user or randomly set by the image sensor.

[0130] In some embodiments of the present application, before the image sensor takes pictures, in order to prevent the holes and photoelectrons remaining in the photodiode of the first pixel unit of each pixel group of the image sensor from affecting the shooting effect, the photodiode of each first pixel unit needs to be cleared to clear the holes and photoelectrons remaining.

[0131] In some embodiments of the present application, the above-mentioned step 1001 may include the following steps: step 10011.

[0132] In step 10011, before the image sensor is exposed, the processor controls the first transfer gate transistor, the first reset switch transistor, the second transfer gate transistor and the second reset switch transistor of the first pixel unit of each pixel group of the image sensor to switch to the on state to clear the holes and photoelectrons in the photodiode of the first pixel unit of each pixel group.

[0133] In some embodiments of the present application, since the first reset switch transistor of the hole collection circuit of each pixel group is connected to the negative electrode of the first DC power supply, when the first transfer gate transistor and the first reset switch transistor of the first pixel unit of each pixel group are switched to the on state, the holes in the photodiode of the first pixel unit can flow out of the photodiode to clear the holes in the photodiode of the first pixel unit of each pixel group.

[0134] In some embodiments of the present application, since the second reset switch transistor of the electron collection circuit of each pixel group is connected to the positive pole of the second DC power supply, when the second transfer gate transistor and the second reset switch transistor of the first pixel unit of each pixel group are switched to the on state, the photoelectrons in the photodiode of the first pixel unit can flow out of the photodiode to clear the photoelectrons in the photodiode of the first pixel unit of each pixel group.

[0135] For example, the circuit structure of each pixel group in the image sensor is as follows: Figure 6 As shown, for example, the first pixel unit is the pixel unit corresponding to the photodiode PD0. Since only the first pixel unit in each pixel group of the image sensor performs the shooting task in the single-pixel unit shooting mode, and the remaining three pixel units do not perform the shooting task, only the pixel unit corresponding to the photodiode PD0 is working, and the pixel units corresponding to the photodiode PD1, the pixel units corresponding to the photodiode PD2, and the pixel units corresponding to the photodiode PD3 are all inoperative. Accordingly, in the single-pixel unit shooting mode, first, before the image sensor is exposed, the processor controls the first transfer gate transistor TG of the pixel unit corresponding to the photodiode PD1 of each pixel group of the image sensor. h1 and the second transfer gate transistor TG e1 are switched to the off state, and the first transmission gate transistor TG of the pixel unit corresponding to the photodiode PD2 h2 and the second transfer gate transistor TG e2 The first transmission gate transistor TG of the pixel unit corresponding to the photodiode PD3 is also switched to the off state. h3 and the second transfer gate transistor TG e3They are also switched to the off state to ensure that the pixel unit corresponding to the photodiode PD1, the pixel unit corresponding to the photodiode PD2, and the pixel unit corresponding to the photodiode PD3 are not working.

[0136] Afterwards, the processor controls the first transfer gate transistor TG of the pixel unit corresponding to the photodiode PD0 of each pixel group of the image sensor. h0 , the first reset switch transistor RST h , the second transmission gate transistor TG e0 and the second reset switch transistor RST e Both are switched to the on state, so that the holes in the photodiode PD0 can flow out to clear the holes in the photodiode PD0 , and the photoelectrons in the photodiode PD0 can flow out to clear the photoelectrons in the photodiode PD0 .

[0137] In some embodiments of the present application, by controlling the opening and closing states of switching transistors such as the first transfer gate transistor, the first reset switch transistor, the second transfer gate transistor, and the second reset switch transistor of the first pixel unit of each pixel group of the image sensor, it is possible to clear the holes and photoelectrons in the photodiode of the first pixel unit of each pixel group. The control logic is relatively simple and easy to implement.

[0138] In step 1002 , during exposure of the image sensor, the processor controls the photodiode of the first pixel unit of each pixel group of the image sensor to generate and store holes and photoelectrons.

[0139] In some embodiments of the present application, after clearing the remaining holes and photoelectrons in the photodiode of the first pixel unit of each pixel group of the image sensor, the current shooting begins, that is, the image sensor is controlled to start exposure so that light can be irradiated to the photodiode of the first pixel unit of each pixel group of the image sensor, and the photodiode irradiated by the light can generate holes and photoelectrons.

[0140] In some embodiments of the present application, the above-mentioned step 1002 may include the following steps: step 10021.

[0141] In step 10021, during the exposure process of the image sensor, the processor controls the first transfer gate transistor, the first reset switch transistor, the second transfer gate transistor and the second reset switch transistor of the first pixel unit of each pixel group of the image sensor to switch to the off state, so that the photodiode of the first pixel unit of each pixel group generates and stores holes and photoelectrons.

[0142] In some embodiments of the present application, since the photodiode of the first pixel unit of each pixel group of the image sensor continuously generates holes and photoelectrons during the exposure process of the image sensor, in order to prevent the holes and photoelectrons generated during the exposure process from flowing out, it is necessary to control the first transfer gate transistor and the first reset switch transistor of the first pixel unit of each pixel group of the image sensor to switch to the off state, so that the holes generated by the photodiode of the first pixel unit during the current exposure process always remain within the photodiode. At the same time, it is necessary to control the second transfer gate transistor and the second reset switch transistor of the first pixel unit of each pixel group of the image sensor to switch to the off state, so that the photoelectrons generated by the photodiode of the first pixel unit during the current exposure process always remain within the photodiode.

[0143] For example, the circuit structure of each pixel group in the image sensor is as follows: Figure 6 As shown, for example, the first pixel unit is the pixel unit corresponding to the photodiode PD0, and the first transmission gate transistor TG of the pixel unit corresponding to the photodiodes PD1, PD2, and PD3 is h1 TG h2 TG h3 and the second transfer gate transistor TG e1 TG e2 TG e3 During the exposure process of the image sensor, the processor controls the first transmission gate transistor TG of the pixel unit corresponding to the photodiode PD0 of each pixel group of the image sensor. h0 , the first reset switch transistor RST h , the second transmission gate transistor TG e0 and the second reset switch transistor RST e Both are switched to the off state, so that the photodiode PD0 generates and stores holes and photoelectrons.

[0144] In some embodiments of the present application, by controlling the opening and closing states of switching transistors such as the first transfer gate transistor, the first reset switch transistor, the second transfer gate transistor, and the second reset switch transistor of the first pixel unit of each pixel group of the image sensor, it is possible to ensure that the photodiode of the first pixel unit of each pixel group generates and stores holes and photoelectrons during the exposure process of the image sensor. The control logic is relatively simple and easy to implement.

[0145] In some embodiments of the present application, at the end of exposure of the image sensor, holes generated by the photodiode of each pixel group of the image sensor need to be transferred to a first storage capacitor to convert the holes generated by the current exposure into a hole voltage; and photoelectrons generated by the photodiode of each pixel group need to be transferred to a second storage capacitor to convert the photoelectrons generated by the current exposure into a photoelectric voltage. Furthermore, since the hole collection circuit and the electron collection circuit have a certain voltage offset, i.e., a reset voltage, when no charge is stored, before the end of exposure of the image sensor, the following steps need to be performed: Step 1005 and Step 1006.

[0146] In step 1005, the processor controls the first reset switch transistor and the first row selection switch transistor of the first pixel unit of each pixel group of the image sensor to switch to the on state to clear the first storage capacitor of the hole collection circuit of each pixel group; after the first storage capacitor of the hole collection circuit of each pixel group of the image sensor is cleared, the processor controls the first reset switch transistor of the first pixel unit of each pixel group to switch to the off state; after the first reset switch transistor of the first pixel unit of each pixel group of the image sensor is switched to the off state, the processor reads the voltage of the first storage capacitor of the hole collection circuit of each pixel group, and determines the read voltage as the reset voltage of the hole collection circuit.

[0147] In some embodiments of the present application, since new holes will be generated in the photodiode of the first pixel unit during the exposure process of the image sensor, and the newly generated holes are the holes required for the current imaging, it is necessary to clear the first storage capacitor of the hole collection circuit of each pixel group before the end of the exposure of the image sensor, on the one hand, in order to obtain the reset voltage of the first storage capacitor in the cleared state, and on the other hand, to transfer the newly generated holes to the first storage capacitor, thereby converting the holes generated in this exposure into hole voltage.

[0148] In some embodiments of the present application, because the first reset switch transistor of the first pixel unit of each pixel group is connected to the negative electrode of the first DC power supply, when the first reset switch transistor and the first row select switch transistor are switched to the on state, holes in the first storage capacitor of the hole collection circuit of each pixel group flow out, thereby clearing the first storage capacitor. After clearing the first storage capacitor, the first reset switch transistor of the first pixel unit of each pixel group is controlled to switch to the off state, so that the reset voltage of the hole collection circuit can be read from the first storage capacitor.

[0149] For example, the circuit structure of each pixel group in the image sensor is as follows: Figure 6As shown, for example, the first pixel unit is the pixel unit corresponding to the photodiode PD0, and the first transmission gate transistor TG of the pixel unit corresponding to the photodiodes PD1, PD2, and PD3 is h1 TG h2 TG h3 and the second transfer gate transistor TG e1 TG e2 TG e3 During the exposure process of the image sensor, the processor controls the first reset switch transistor RST of the pixel unit corresponding to the photodiode PD0 of each pixel group of the image sensor. h and the first row select switch transistor RSL h are switched to the on state to empty the first storage capacitor FD of the hole collection circuit C1 of each pixel group. h ; The first storage capacitor FD of the hole collection circuit C1 of each pixel group of the image sensor h After clearing, the processor controls the first reset switch transistor RST of the pixel unit corresponding to the photodiode PD0 of each pixel group h Switch to the off state; the first reset switch transistor RST of the first pixel unit of each pixel group of the image sensor h After switching to the off state, the processor reads the first storage capacitor FD of the hole collection circuit C1 of each pixel group. h At this time, the first storage capacitor FD h That is the reset voltage of the hole collection circuit C1.

[0150] In some embodiments of the present application, by controlling the opening and closing states of switching transistors such as the first reset switching transistor and the first row selection switching transistor of the first pixel unit of each pixel group of the image sensor, the reset voltage of the hole collection circuit of each pixel group can be read. The entire control process is relatively simple and easy to implement.

[0151] In step 1006, the processor controls the second reset switch transistor and the second row selection switch transistor of the first pixel unit of each pixel group of the image sensor to switch to the on state to clear the second storage capacitor of the electron collection circuit of each pixel group; after the second storage capacitor of the electron collection circuit of each pixel group of the image sensor is cleared, the processor controls the second reset switch transistor of the first pixel unit of each pixel group to switch to the off state; after the second reset switch transistor of the first pixel unit of each pixel group of the image sensor is switched to the off state, the processor reads the voltage of the second storage capacitor of the electron collection circuit of each pixel group, and determines the read voltage as the reset voltage of the electron collection circuit.

[0152] In some embodiments of the present application, since the photodiode of the first pixel unit will generate new photoelectrons during the exposure process of the image sensor, and the newly generated photoelectrons are the photoelectrons required for the current imaging, it is necessary to clear the second storage capacitor of the electron collection circuit of each pixel group before the end of the exposure of the image sensor, on the one hand, in order to obtain the reset voltage of the second storage capacitor in the cleared state, and on the other hand, to transfer the newly generated photoelectrons to the first storage capacitor, so as to realize the conversion of the photoelectrons generated by this exposure into photoelectric voltage.

[0153] In some embodiments of the present application, because the second reset switch transistor of the first pixel unit of each pixel group is connected to the positive electrode of the second DC power supply, when the second reset switch transistor and the second row select switch transistor are switched to the on state, photoelectrons in the second storage capacitor of the electron collection circuit of each pixel group flow out, thereby clearing the second storage capacitor. After the second storage capacitor is cleared, the second reset switch transistor of the first pixel unit of each pixel group is controlled to switch to the off state, and the reset voltage of the electron collection circuit can be read from the second storage capacitor.

[0154] For example, the circuit structure of each pixel group in the image sensor is as follows: Figure 6 As shown, for example, the first pixel unit is the pixel unit corresponding to the photodiode PD0, and the first transmission gate transistor TG of the pixel unit corresponding to the photodiodes PD1, PD2, and PD3 is h1 TG h2 TG h3 and the second transfer gate transistor TG e1 TG e2 TG e3 During the exposure process of the image sensor, the processor controls the second reset switch transistor RST of the pixel unit corresponding to the photodiode PD0 of each pixel group of the image sensor. e and the second row select switch transistor RSL e are switched to the conductive state to empty the second storage capacitor FD of the electron collection circuit C2 of each pixel group. e ; The second storage capacitor FD of the electron collection circuit C2 of each pixel group of the image sensor e After clearing, the processor controls the second reset switch transistor RST of the pixel unit corresponding to the photodiode PD0 of each pixel group e Switch to the off state; the second reset switch transistor RST of the first pixel unit of each pixel group of the image sensor e After switching to the off state, the processor reads the second storage capacitor FD of the electron collection circuit C2 of each pixel group. eAt this time, the second storage capacitor FD e The voltage is the reset voltage of the electron collection circuit C2.

[0155] In some embodiments of the present application, by controlling the opening and closing states of switching transistors such as the second reset switch transistor and the second row selection switch transistor of the first pixel unit of each pixel group of the image sensor, the reset voltage of the electron collection circuit of each pixel group can be read. The entire control process is relatively simple and easy to implement.

[0156] In step 1003, after the exposure of the image sensor is completed, the processor controls the holes generated by the photodiode of the first pixel unit of each pixel group of the image sensor to flow into the hole collection circuit of each pixel group, and the processor reads the voltage boost voltage of the hole collection circuit of each pixel group; the processor controls the photoelectrons generated by the photodiode of the first pixel unit of each pixel group of the image sensor to flow into the electron collection circuit of each pixel group, and the processor reads the voltage drop voltage of the electron collection circuit of each pixel group.

[0157] In some embodiments of the present application, since the photodiode of the first pixel unit of each pixel group of the image sensor generates new holes during the exposure process of the image sensor, and the new holes are the holes required for this shooting, after the exposure of the image sensor is completed, the processor controls the holes generated by the photodiode of the first pixel unit of each pixel group of the image sensor to flow into the hole collection circuit of each pixel group, and the processor reads the boost voltage of the hole collection circuit of each pixel group, wherein the boost voltage is the voltage raised by the holes generated by the photodiode of the first pixel unit during this exposure process based on the reset voltage.

[0158] In some embodiments of the present application, the above-mentioned step 1003 may include the following steps: step 10031.

[0159] In step 10031, after the exposure of the image sensor is completed, the processor controls the first transfer gate transistor of the first pixel unit of each pixel group of the image sensor to switch to the on state, so that the holes generated by the photodiode of the first pixel unit of each pixel group of the image sensor flow into the first storage capacitor of the hole collection circuit of each pixel group; after the holes generated by the photodiode of the first pixel unit of each pixel group of the image sensor flow into the first storage capacitor of the hole collection circuit of each pixel group, the processor reads the voltage of the first storage capacitor of the hole collection circuit of each pixel group of the image sensor, and determines the read voltage as the voltage boost voltage of the hole collection circuit.

[0160] For example, the circuit structure of each pixel group in the image sensor is as follows: Figure 6As shown, for example, the first pixel unit is the pixel unit corresponding to the photodiode PD0, and the first transmission gate transistor TG of the pixel unit corresponding to the photodiodes PD1, PD2, and PD3 is h1 TG h2 TG h3 and the second transfer gate transistor TG e1 TG e2 TG e3 After the image sensor is exposed, the processor controls the first transmission gate transistor TG of the pixel unit corresponding to the photodiode PD0 of each pixel group of the image sensor. h0 Switched to the on state, the holes generated by the photodiode PD0 of each pixel group of the image sensor can pass through the first transfer gate transistor TG h0 The hole current flowing into the first storage capacitor FD of the hole collection circuit C1 of each pixel group h The holes generated in the photodiode PD0 all flow into the first storage capacitor FD of the hole collection circuit C1 of each pixel group. h Afterwards, the processor reads the first storage capacitor FD of the hole collection circuit C1 of each pixel group of the image sensor. h At this time, the first storage capacitor FD h The voltage is the boost voltage of the hole collection circuit C1.

[0161] In some embodiments of the present application, by controlling the opening and closing state of the first transfer gate transistor of the first pixel unit of each pixel group of the image sensor, it is possible to read the boost voltage of the hole collection circuit of each pixel group exposed this time. The entire control process is relatively simple and easy to implement.

[0162] In some embodiments of the present application, since the photodiode of the first pixel unit of each pixel group of the image sensor generates new photoelectrons during the exposure process of the image sensor, and the new photoelectrons are the photoelectrons required for this shooting, after the exposure of the image sensor is completed, the processor controls the photoelectrons generated by the photodiode of the first pixel unit of each pixel group of the image sensor to flow into the electron collection circuit of each pixel group, and the processor reads the voltage drop voltage of the electron collection circuit of each pixel group, wherein the voltage drop voltage is the voltage dropped by the photoelectrons generated by the photodiode of the first pixel unit during this exposure based on the reset voltage.

[0163] In some embodiments of the present application, the above-mentioned step 1003 may include the following steps: step 10032.

[0164] In step 10032, after the exposure of the image sensor is completed, the processor controls the second transfer gate transistor of the first pixel unit of each pixel group of the image sensor to switch to the on state, so that the photoelectrons generated by the photodiode of the first pixel unit of each pixel group of each pixel group flow into the second storage capacitor of the electron collection circuit of each pixel group; after the photoelectrons generated by the photodiode of the first pixel unit of each pixel group of the image sensor flow into the second storage capacitor of the electron collection circuit of each pixel group, the processor reads the voltage of the second storage capacitor of the electron collection circuit of each pixel group of the image sensor, and determines the read voltage as the voltage drop voltage of the electron collection circuit.

[0165] For example, the circuit structure of each pixel group in the image sensor is as follows: Figure 6 As shown, for example, the first pixel unit is the pixel unit corresponding to the photodiode PD0, and the first transmission gate transistor TG of the pixel unit corresponding to the photodiodes PD1, PD2, and PD3 is h1 TG h2 TG h3 and the second transfer gate transistor TG e1 TG e2 TG e3 After the image sensor is exposed, the processor controls the second transmission gate transistor TG of the pixel unit corresponding to the photodiode PD0 of each pixel group of the image sensor. e0 Switched to the on state, the photoelectrons generated by the photodiode PD0 of each pixel group of the image sensor can pass through the second transfer gate transistor TG e0 The electrons flowing into the second storage capacitor FD of the electron collection circuit C2 of each pixel group e All the photoelectrons generated in the photodiode PD0 flow into the second storage capacitor FD of the electron collection circuit C2 of each pixel group. e Afterwards, the processor reads the second storage capacitor FD of the electron collection circuit C2 of each pixel group of the image sensor. e At this time, the second storage capacitor FD e That is the voltage drop of the electron collection circuit C2.

[0166] In some embodiments of the present application, by controlling the opening and closing state of the second transfer gate transistor of the first pixel unit of each pixel group of the image sensor, it is possible to read the voltage drop of the electron collection circuit of each pixel group exposed this time. The entire control process is relatively simple and easy to implement.

[0167] In step 1004, the processor performs a difference operation on the boost voltage and the reset voltage of the hole collection circuit of each pixel group of the image sensor to obtain the hole voltage of each pixel group; and performs a difference operation on the drop voltage and the reset voltage of the electron collection circuit of each pixel group of the image sensor to obtain the photoelectric voltage of each pixel group.

[0168] In some embodiments of the present application, the hole voltage is a voltage converted from holes generated by the light-spot diode of the first pixel unit during the current exposure process.

[0169] In some embodiments of the present application, the photoelectric voltage is a voltage converted from photoelectrons generated by the light-spot diode of the first pixel unit during the current exposure process.

[0170] In some embodiments of the present application, by simply controlling the photodiode, hole collection circuit and electron collection circuit of the first pixel unit of each pixel group of the image sensor, the hole voltage and photoelectric voltage of each pixel group during the current exposure process can be collected. The control logic is relatively simple and easy to implement.

[0171] In some embodiments of the present application, when the working mode of the image sensor is the four-pixel unit focus mode, as shown in FIG. Figure 11 As shown, the above step 901 may include the following steps: step 1101, step 1102, step 1103 and step 1104.

[0172] In step 1101 , before the image sensor is exposed to light, the processor controls the photodiodes of all pixel units in each pixel group of the image sensor to clear stored holes and photoelectrons.

[0173] In some embodiments of the present application, in a four-pixel unit focus mode, all pixel units in each pixel group of the image sensor should perform a focus task.

[0174] In some embodiments of the present application, before the image sensor takes a picture, in order to prevent the holes and photoelectrons remaining in the photodiode of any pixel unit of each pixel group of the image sensor from affecting the shooting effect, the photodiodes of all pixel units of each pixel group need to be cleared to clear the holes and photoelectrons remaining.

[0175] In some embodiments of the present application, the above-mentioned step 1101 may include the following steps: step 11011.

[0176] In step 11011, before the image sensor is exposed, the processor controls the first transfer gate transistor, the first reset switch transistor, the second transfer gate transistor and the second reset switch transistor of all pixel units of each pixel group of the image sensor to switch to the on state to clear the holes and photoelectrons in the photodiodes of all pixel units of each pixel group.

[0177] In some embodiments of the present application, since the first reset switch transistor of the hole collection circuit of each pixel group is connected to the negative electrode of the first DC power supply, when the first transfer gate transistor and the first reset switch transistor of all pixel units of each pixel group are switched to the on state, the holes in the photodiodes of all pixel units can flow out to clear the holes in the photodiodes of all pixel units of each pixel group.

[0178] In some embodiments of the present application, since the second reset switch transistor of the electron collection circuit of each pixel group is connected to the positive pole of the second DC power supply, when the second transfer gate transistor and the second reset switch transistor of all pixel units in each pixel group are switched to the on state, the photoelectrons in the photodiodes of all pixel units can flow out to clear the photoelectrons in the photodiodes of all pixel units in each pixel group.

[0179] For example, the circuit structure of each pixel group in the image sensor is as follows: Figure 6 As shown, since all pixel units in each pixel group of the image sensor perform the focusing task in the four-pixel unit focusing mode, before the image sensor is exposed, the processor controls the first transfer gate transistor TG of the pixel unit corresponding to the photodiode PD0 of each pixel group of the image sensor. h0 and the second transfer gate transistor TG e0 Both are switched to the on state, so that the holes in the photodiode PD0 can flow out to clear the holes in the photodiode PD0 , and the photoelectrons in the photodiode PD0 can flow out to clear the photoelectrons in the photodiode PD0 .

[0180] Similarly, the processor controls the first transfer gate transistor TG of the pixel unit corresponding to the photodiode PD1 of each pixel group of the image sensor. h1 and the second transfer gate transistor TG e1 Both are switched to the on state, so that the holes in the photodiode PD1 can flow out to clear the holes in the photodiode PD1 , and the photoelectrons in the photodiode PD1 can flow out to clear the photoelectrons in the photodiode PD1 .

[0181] Similarly, the processor controls the first transfer gate transistor TG of the pixel unit corresponding to the photodiode PD2 of each pixel group of the image sensor.h2 and the second transfer gate transistor TG e2 Both are switched to the on state, so that the holes in the photodiode PD2 can flow out to clear the holes in the photodiode PD2, and the photoelectrons in the photodiode PD2 can flow out to clear the photoelectrons in the photodiode PD2.

[0182] Similarly, the processor controls the first transfer gate transistor TG of the pixel unit corresponding to the photodiode PD3 of each pixel group of the image sensor. h3 and the second transfer gate transistor TG e3 Both are switched to the on state, so that the holes in the photodiode PD3 can flow out to clear the holes in the photodiode PD3, and the photoelectrons in the photodiode PD3 can flow out to clear the photoelectrons in the photodiode PD3.

[0183] In some embodiments of the present application, by controlling the opening and closing states of switching transistors such as the first transfer gate transistor, the first reset switch transistor, the second transfer gate transistor, and the second reset switch transistor of all pixel units in each pixel group of the image sensor, it is possible to clear the holes and photoelectrons in the photodiodes of all pixel units in each pixel group. The control logic is relatively simple and easy to implement.

[0184] In step 1102 , during exposure of the image sensor, the processor controls the photodiodes of all pixel units of each pixel group of the image sensor to generate and store holes and photoelectrons.

[0185] In some embodiments of the present application, after clearing the remaining holes and photoelectrons in the photodiodes of all pixel units of each pixel group of the image sensor, the current shooting begins, that is, the image sensor is controlled to start exposure so that light can be irradiated to the photodiodes of all pixel units of each pixel group of the image sensor, and the photodiodes irradiated by the light can generate holes and photoelectrons.

[0186] In some embodiments of the present application, the above-mentioned step 1102 may include the following steps: step 11021.

[0187] In step 11021, during the exposure process of the image sensor, the processor controls the first transfer gate transistor, the first reset switch transistor, the second transfer gate transistor and the second reset switch transistor of all pixel units of each pixel group of the image sensor to switch to the off state, so that the photodiodes of all pixel units of each pixel group generate and store holes and photoelectrons.

[0188] In some embodiments of the present application, since the photodiodes of all pixel units in each pixel group of the image sensor continuously generate holes and photoelectrons during the exposure process of the image sensor, in order to prevent the holes and photoelectrons generated during the exposure process from flowing out, it is necessary to control the first transfer gate transistors and first reset switch transistors of all pixel units in each pixel group of the image sensor to switch to an off state, so that the holes generated by the photodiodes of all pixel units during the current exposure process always remain within the photodiodes. At the same time, it is necessary to control the second transfer gate transistors and second reset switch transistors of all pixel units in each pixel group of the image sensor to switch to an off state, so that the photoelectrons generated by the photodiodes of all pixel units during the current exposure process always remain within the photodiodes.

[0189] For example, the circuit structure of each pixel group in the image sensor is as follows: Figure 6 As shown, during the exposure process of the image sensor, the processor controls the first transmission gate transistor TG of the pixel unit corresponding to the photodiodes PD0, PD1, PD2, and PD3 of each pixel group of the image sensor. h0 TG h1 TG h2 TG h3 and the second transfer gate transistor TG e0 TG e1 TG e2 TG e3 All are switched to the off state, so that the photodiodes PD0, PD1, PD2, and PD3 generate and store holes and photoelectrons.

[0190] In some embodiments of the present application, by controlling the opening and closing states of switching transistors such as the first transfer gate transistor, the first reset switch transistor, the second transfer gate transistor, and the second reset switch transistor of all pixel units of each pixel group of the image sensor, it is possible to ensure that the photodiodes of all pixel units of each pixel group generate and store holes and photoelectrons during the exposure process of the image sensor. The control logic is relatively simple and easy to implement.

[0191] In some embodiments of the present application, at the end of exposure of the image sensor, holes generated by the photodiode of each pixel group of the image sensor need to be transferred to a first storage capacitor to convert the holes generated by the current exposure into a hole voltage; and photoelectrons generated by the photodiode of each pixel group need to be transferred to a second storage capacitor to convert the photoelectrons generated by the current exposure into a photoelectric voltage. Furthermore, since the hole collection circuit and the electron collection circuit have a certain voltage offset, i.e., a reset voltage, when no charge is stored, before the end of exposure of the image sensor, the following steps need to be performed: Step 1105 and Step 1106.

[0192] In step 1105, the processor controls the first reset switch transistors and the first row selection switch transistors of all pixel units of each pixel group of the image sensor to switch to the on state to clear the first storage capacitor of the hole collection circuit of each pixel group; after the first storage capacitor of the hole collection circuit of each pixel group of the image sensor is cleared, the processor controls the first reset switch transistors of all pixel units of each pixel group to switch to the off state; after the first reset switch transistors of all pixel units of each pixel group of the image sensor are switched to the off state, the processor reads the voltage of the first storage capacitor of the hole collection circuit of each pixel group, and determines the read voltage as the reset voltage of the hole collection circuit.

[0193] In some embodiments of the present application, since new holes will be generated in the photodiodes of all pixel units during the exposure process of the image sensor, and the newly generated holes are the holes required for the current imaging, it is necessary to clear the first storage capacitor of the hole collection circuit of each pixel group before the end of the exposure of the image sensor, on the one hand, in order to obtain the reset voltage of the first storage capacitor in the cleared state, and on the other hand, to transfer the newly generated holes to the first storage capacitor, thereby converting the holes generated in this exposure into hole voltage.

[0194] In some embodiments of the present application, because the first reset switch transistors of all pixel cells in each pixel group are connected to the negative electrode of the first DC power supply, when the first reset switch transistors and the first row select switch transistors are switched to an on state, holes in the first storage capacitor of the hole collection circuit of each pixel group flow out, thereby clearing the first storage capacitor. After clearing the first storage capacitor, the first reset switch transistors of all pixel cells in each pixel group are controlled to switch to an off state, and the reset voltage of the hole collection circuit can be read from the first storage capacitor.

[0195] For example, the circuit structure of each pixel group in the image sensor is as follows: Figure 6 As shown, during the exposure process of the image sensor, since the pixel units corresponding to the photodiodes PD0, PD1, PD2, and PD3 of each pixel group of the image sensor share a hole collection circuit C1, the processor controls the first reset switch transistor RST in the hole collection circuit C1. h and the first row select switch transistor RSL h are switched to the on state to empty the first storage capacitor FD of the hole collection circuit C1 of each pixel group. h ; The first storage capacitor FD of the hole collection circuit C1 of each pixel group of the image sensor hAfter clearing, the processor controls the first reset switch transistor RST of the hole collection circuit C1 h Switch to the off state; the first reset switch transistor RST of the hole collection circuit C1 of each pixel group of the image sensor h After switching to the off state, the processor reads the first storage capacitor FD of the hole collection circuit C1 of each pixel group. h At this time, the first storage capacitor FD h That is the reset voltage of the hole collection circuit C1.

[0196] In some embodiments of the present application, by controlling the opening and closing states of switching transistors such as the first reset switch transistor and the first row selection switch transistor of the hole collection circuit of each pixel group of the image sensor, the reset voltage of the hole collection circuit of each pixel group can be read. The entire control process is relatively simple and easy to implement.

[0197] In step 1106, the processor controls the second reset switch transistors and the second row selection switch transistors of all pixel units of each pixel group of the image sensor to switch to the on state to clear the second storage capacitor of the electron collection circuit of each pixel group; after the second storage capacitor of the electron collection circuit of each pixel group of the image sensor is cleared, the processor controls the second reset switch transistors of all pixel units of each pixel group to switch to the off state; after the second reset switch transistors of all pixel units of each pixel group of the image sensor are switched to the off state, the processor reads the voltage of the second storage capacitor of the voltage collection circuit of each pixel group, and determines the read voltage as the reset voltage of the electron collection circuit.

[0198] In some embodiments of the present application, since the photodiodes of all pixel units will generate new photoelectrons during the exposure process of the image sensor, and the newly generated photoelectrons are the photoelectrons required for the current imaging, it is necessary to clear the second storage capacitor of the electron collection circuit of each pixel group before the end of the exposure of the image sensor, on the one hand, in order to obtain the reset voltage of the second storage capacitor in the cleared state, and on the other hand, to transfer the newly generated photoelectrons to the first storage capacitor, so as to realize the conversion of the photoelectrons generated by this exposure into photoelectric voltage.

[0199] In some embodiments of the present application, because the second reset switch transistors of all pixel cells in each pixel group are connected to the positive electrode of the second DC power supply, when the second reset switch transistors and the second row select switch transistors are switched to an on state, photoelectrons within the second storage capacitor of the electron collection circuit of each pixel group flow out, thereby clearing the second storage capacitor. After clearing the second storage capacitor, the second reset switch transistors of all pixel cells in each pixel group are controlled to switch to an off state, and the reset voltage of the electron collection circuit can be read from the second storage capacitor.

[0200] For example, the circuit structure of each pixel group in the image sensor is as follows: Figure 6 As shown, during the exposure process of the image sensor, since the pixel units corresponding to the photodiodes PD0, PD1, PD2, and PD3 of each pixel group of the image sensor share an electron collection circuit C2, the processor controls the second reset switch transistor RST in the electron collection circuit C2. e and the second row select switch transistor RSL e are switched to the conductive state to empty the second storage capacitor FD of the electron collection circuit C2 of each pixel group. e ; The second storage capacitor FD of the electron collection circuit C2 of each pixel group of the image sensor e After clearing, the processor controls the second reset switch transistor RST of the electron collection circuit C2 e Switched to the off state; the second reset switch transistor RST of the electron collection circuit C2 of each pixel group of the image sensor e After switching to the off state, the processor reads the second storage capacitor FD of the electron collection circuit C2 of each pixel group. e At this time, the second storage capacitor FD e The voltage is the reset voltage of the electron collection circuit C2.

[0201] In some embodiments of the present application, by controlling the opening and closing states of switching transistors such as the second reset switch transistor and the second row selection switch transistor of the electron collection circuit of each pixel group of the image sensor, the reset voltage of the electron collection circuit of each pixel group can be read. The entire control process is relatively simple and easy to implement.

[0202] In step 1103, after the exposure of the image sensor is completed, the processor controls the holes generated by the photodiodes of the two pixel units on one side of each pixel group of the image sensor to flow into the hole collection circuit of each pixel group, and the processor reads the voltage boost voltage of the hole collection circuit of each pixel group; the processor controls the photoelectrons generated by the photodiodes of the two pixel units on the other side of each pixel group of the image sensor to flow into the electron collection circuit of each pixel group, and the processor reads the voltage drop voltage of the electron collection circuit of each pixel group; where one side is the left side or the right side.

[0203] In some embodiments of the present application, when one side is the left side, the other side is the right side, and when one side is the right side, the other side is the left side.

[0204] In some embodiments of the present application, since during the exposure process of the image sensor, the photodiodes of all pixel units in each pixel group of the image sensor will generate new holes, and the new holes are the holes required for this focusing, and the focusing process requires voltage values ​​on the left and right sides of each pixel group, after the exposure of the image sensor is completed, the processor controls the holes generated by the photodiodes of the two pixel units on one side of each pixel group of the image sensor to flow into the hole collection circuit of each pixel group, and the processor reads the boost voltage of the hole collection circuit of each pixel group, wherein the boost voltage is the voltage raised by the holes generated by the photodiodes of the two pixel units on one side during this exposure based on the reset voltage.

[0205] In some embodiments of the present application, the above-mentioned step 1003 may include the following steps: step 10031.

[0206] In step 10031, the processor controls the first transfer gate transistors of the two pixel units on one side of each pixel group of the image sensor to switch to the on state, so that the holes generated by the photodiodes of the two pixel units on one side of each pixel group flow into the first storage capacitor of the hole collection circuit of each pixel group; after the holes generated by the photodiodes of the two pixel units on one side of each pixel group of the image sensor flow into the first storage capacitor of the hole collection circuit of each pixel group, the processor reads the voltage of the first storage capacitor of the hole collection circuit of each pixel group, and determines the read voltage as the voltage boost voltage of the hole collection circuit.

[0207] For example, one side is the left side and the other side is the right side. The circuit structure of each pixel group in the image sensor is as follows: Figure 6 As shown, for example, the two pixel units on the left are pixel units corresponding to the photodiodes PD0 and PD2, and the two pixel units on the right are pixel units corresponding to the photodiodes PD1 and PD3. In the focus mode, the first transmission gate transistor TG of the pixel units corresponding to the photodiodes PD1 and PD3 ish1 TG h3 Always in the off state, the first transmission gate transistor TG of the pixel unit corresponding to the photodiodes PD0 and PD2 h0 TG h2 Switch to the on state, so that the holes generated by the photodiodes PD0 and PD2 can pass through their respective first transfer gate transistors TG h0 TG h2 The first storage capacitor FD of the hole collection circuit C1 h The holes generated in the photodiodes PD0 and PD2 flow into the first storage capacitor FD of the hole collection circuit C1. h Afterwards, the processor reads the first storage capacitor FD of the hole collection circuit C1. h At this time, the first storage capacitor FD h The voltage is the boost voltage of the hole collection circuit C1.

[0208] In some embodiments of the present application, by controlling the opening and closing states of the first transfer gate transistors of the two pixel units on one side of each pixel group of the image sensor, it is possible to read the boost voltage of the hole collection circuit of each pixel group exposed this time. The entire control process is relatively simple and easy to implement.

[0209] In some embodiments of the present application, since the photodiodes of all pixel units in each pixel group of the image sensor will generate new photoelectrons during the exposure process of the image sensor, and the new photoelectrons are the photoelectrons required for this focusing, and the focusing process requires voltage values ​​on the left and right sides of each pixel group, after the exposure of the image sensor is completed, the processor controls the photoelectrons generated by the photodiodes of the two pixel units on the other side of each pixel group of the image sensor to flow into the electron collection circuit of each pixel group, and the processor reads the voltage drop voltage of the electron collection circuit of each pixel group, wherein the voltage drop voltage is the voltage dropped by the photoelectrons generated by the photodiodes of the two pixel units on the other side during this exposure based on the reset voltage.

[0210] In some embodiments of the present application, the above-mentioned step 1003 may include the following steps: step 10032.

[0211] In step 10032, after the exposure of the image sensor is completed, the processor controls the second transfer gate transistors of the two pixel units on the other side of each pixel group of the image sensor to switch to the on state, so that the photoelectrons generated by the photodiodes of the two pixel units on the other side of each pixel group flow into the second storage capacitor of the electron collection circuit of each pixel group; after the photoelectrons generated by the photodiodes of the two pixel units on the other side of each pixel group of the image sensor flow into the second storage capacitor of the electron collection circuit of each pixel group, the processor reads the voltage of the second storage capacitor of the electron collection circuit of each pixel group of the image sensor, and determines the read voltage as the voltage drop voltage of the electron collection circuit.

[0212] For example, one side is the left side and the other side is the right side. The circuit structure of each pixel group in the image sensor is as follows: Figure 6 As shown, for example, the two pixel units on the left are pixel units corresponding to the photodiodes PD0 and PD2, and the two pixel units on the right are pixel units corresponding to the photodiodes PD1 and PD3. In the focus mode, the second transmission gate transistor TG of the pixel units corresponding to the photodiodes PD0 and PD2 is e0 TG e2 Always in the off state, the second transmission gate transistor TG of the pixel unit corresponding to the photodiodes PD1 and PD3 e1 TG e3 Switching to the on state allows the photoelectrons generated by the photodiodes PD1 and PD3 to pass through their respective second transfer gate transistors TG e1 TG e3 The electrons flowing into the second storage capacitor FD of the electron collection circuit C2 e The photoelectrons generated in the photodiodes PD1 and PD3 flow into the second storage capacitor FD of the electron collection circuit C2. e Afterwards, the processor reads the second storage capacitor FD of the electron collection circuit C2. e At this time, the second storage capacitor FD e The voltage is the voltage drop of the electron collection circuit C2.

[0213] In some embodiments of the present application, by controlling the opening and closing states of the second transfer gate transistors of the two pixel units on the other side of each pixel group of the image sensor, it is possible to read the voltage drop of the electron collection circuit of each pixel group exposed this time. The entire control process is relatively simple and easy to implement.

[0214] In step 1104, the processor performs a difference operation on the boost voltage and the reset voltage of the hole collection circuit of each pixel group of the image sensor to obtain the hole voltage of each pixel group; and performs a difference operation on the drop voltage and the reset voltage of the electron collection circuit of each pixel group of the image sensor to obtain the photoelectric voltage of each pixel group.

[0215] In some embodiments of the present application, the hole voltage is a voltage converted from holes generated by the light-spot diodes of two pixel units on one side during the current exposure process.

[0216] In some embodiments of the present application, the photoelectric voltage is a voltage converted from photoelectrons generated by the light-spot diode of the pixel unit on the other side during the current exposure process.

[0217] In some embodiments of the present application, by simply controlling the photodiodes, hole collection circuits and electron collection circuits of the pixel units on the left and right sides of each pixel group of the image sensor, it is possible to collect the hole voltages of the two pixel units on one side and the photoelectric voltages of the two pixel units on the other side of the same pixel group during the current exposure process. On the one hand, the control logic is relatively simple and easy to implement; on the other hand, since the reading of the hole voltage and the photoelectric voltage are separate and do not interfere with each other, and the values ​​of electrons and holes are exactly the same, therefore, when focusing, it is equivalent to parallel operation, which improves the focusing speed.

[0218] Figure 12 This is a structural block diagram of a shooting device provided by an embodiment of the present application. Figure 12 As shown, the photographing device 1200 may include: a processing module 1201;

[0219] The processing module 1201 is used to control at least one pixel unit of each pixel group of the image sensor to perform photoelectric conversion according to the working mode of the image sensor of the camera module, so as to obtain a hole voltage and a photoelectric voltage of each pixel group; the hole voltage is the voltage converted by the hole collection circuit of the pixel group, and the photoelectric voltage is the voltage converted by the electron collection circuit of the pixel group; the hole voltage of each pixel group is converted into a hole pixel value of each pixel group, and the photoelectric voltage of each pixel group is converted into a photoelectric pixel value of each pixel group; imaging is performed based on the hole pixel value and the photoelectric pixel value of each pixel group, and an image is output.

[0220] In some embodiments of the present application, since when the electronic device is shooting through a camera module, each pixel group of the image sensor of the camera module has a hole collection circuit and an electron collection circuit, the hole collection circuit can collect and store the positively charged holes generated by the photodiodes in the pixel group, and the electron collection circuit can collect and store the negatively charged photoelectrons generated by the photodiodes in the pixel group. Therefore, the positive and negative information generated by the photodiodes can be fully utilized, so that the voltage signal amount read by the processor from the image sensor of the camera module is doubled, and imaging is performed based on the read voltage signal amount, thereby improving the image quality of the imaged image.

[0221] In some embodiments of the present application, the operating modes of the image sensor include: a single-pixel unit shooting mode or a four-pixel unit focusing mode;

[0222] The single-pixel unit shooting mode is used to shoot images based on one pixel unit in each pixel group of the image sensor, and the four-pixel unit focusing mode is used to focus during the image shooting process based on all pixel units in each pixel group of the image sensor.

[0223] In some embodiments of the present application, the working mode of the image sensor is a single-pixel unit shooting mode;

[0224] The processing module 1201 is specifically configured to perform a sum operation on the hole pixel value and the photoelectric pixel value of each pixel group to obtain a total pixel value of each pixel group; and generate an image according to the total pixel value of each pixel group.

[0225] In some embodiments of the present application, the image sensor operates in a four-pixel unit focus mode;

[0226] The processing module 1201 is specifically configured to calculate phase information based on the hole pixel value and the photoelectric pixel value of each pixel group to obtain focus parameters of the image sensor; control the image sensor to focus according to the focus parameters, and output an image.

[0227] In some embodiments of the present application, the working mode of the image sensor is a single-pixel unit shooting mode;

[0228] The processing module 1201 is specifically configured to control the photodiode of the first pixel unit of each pixel group of the image sensor to clear stored holes and photoelectrons before the image sensor is exposed; control the photodiode of the first pixel unit of each pixel group of the image sensor to generate and store holes and photoelectrons during the exposure process of the image sensor; control the holes generated by the photodiode of the first pixel unit of each pixel group of the image sensor to flow into the hole collection circuit of each pixel group after the exposure of the image sensor is completed, and read the boost voltage of the hole collection circuit of each pixel group; control the photoelectrons generated by the photodiode of the first pixel unit of each pixel group of the image sensor to flow into the electron collection circuit of each pixel group, and read the voltage drop voltage of the electron collection circuit of each pixel group; perform a difference operation on the voltage boost voltage of the hole collection circuit of each pixel group of the image sensor and the reset voltage to obtain the hole voltage of each pixel group; perform a difference operation on the voltage drop voltage of the electron collection circuit of each pixel group of the image sensor and the reset voltage to obtain the photoelectric voltage of each pixel group.

[0229] In some embodiments of the present application, the processing module 1201 is specifically used to control the first transfer gate transistor, the first reset switch transistor, the second transfer gate transistor, and the second reset switch transistor of the first pixel unit of each pixel group of the image sensor to switch to the on state before the image sensor is exposed, so as to clear the holes and photoelectrons in the photodiode of the first pixel unit of each pixel group.

[0230] In some embodiments of the present application, the processing module 1201 is specifically used to control the first transfer gate transistor, the first reset switch transistor, the second transfer gate transistor, and the second reset switch transistor of the first pixel unit of each pixel group of the image sensor to switch to the off state during the exposure process of the image sensor, so that the photodiode of the first pixel unit of each pixel group generates and stores holes and photoelectrons.

[0231] In some embodiments of the present application, the processing module 1201 is specifically used to control the first reset switch transistor and the first row selection switch transistor of the first pixel unit of each pixel group of the image sensor to switch to the on state to clear the first storage capacitor of the hole collection circuit of each pixel group of the image sensor; after the first storage capacitor of the hole collection circuit of each pixel group of the image sensor is cleared, control the first reset switch transistor of the first pixel unit of each pixel group to switch to the off state; after the first reset switch transistor of the first pixel unit of each pixel group of the image sensor is switched to the off state, read the voltage of the first storage capacitor of the hole collection circuit of each pixel group, and determine the read voltage as the reset voltage of the hole collection circuit.

[0232] In some embodiments of the present application, the processing module 1201 is specifically used to control the second reset switch transistor and the second row selection switch transistor of the first pixel unit of each pixel group of the image sensor to switch to the on state to clear the second storage capacitor of the electron collection circuit of each pixel group of the image sensor; after the second storage capacitor of the electron collection circuit of each pixel group of the image sensor is cleared, control the second reset switch transistor of the first pixel unit of each pixel group to switch to the off state; after the second reset switch transistor of the first pixel unit of each pixel group of the image sensor is switched to the off state, read the voltage of the second storage capacitor of the electron collection circuit of each pixel group, and determine the read voltage as the reset voltage of the electron collection circuit.

[0233] In some embodiments of the present application, the processing module 1201 is specifically used to control the first transfer gate transistor of the first pixel unit of each pixel group of the image sensor to switch to the on state after the exposure of the image sensor is completed, so that the holes generated by the photodiode of the first pixel unit of each pixel group of the image sensor flow into the first storage capacitor of the hole collection circuit of each pixel group; after the holes generated by the photodiode of the first pixel unit of each pixel group of the image sensor flow into the first storage capacitor of the hole collection circuit of each pixel group, read the voltage of the first storage capacitor of the hole collection circuit of each pixel group of the image sensor, and determine the read voltage as the voltage boost voltage of the hole collection circuit.

[0234] In some embodiments of the present application, the processing module 1201 is specifically used to control the second transfer gate transistor of the first pixel unit of each pixel group of the image sensor to switch to the on state after the exposure of the image sensor is completed, so that the photoelectrons generated by the photodiode of the first pixel unit of each pixel group flow into the second storage capacitor of the electron collection circuit of each pixel group; after the photoelectrons generated by the photodiode of the first pixel unit of each pixel group of the image sensor flow into the second storage capacitor of the electron collection circuit of each pixel group, read the voltage of the second storage capacitor of the electron collection circuit of each pixel group of the image sensor, and determine the read voltage as the voltage drop voltage of the electron collection circuit.

[0235] In some embodiments of the present application, the image sensor operates in a four-pixel unit focus mode;

[0236] The processing module 1201 is specifically configured to control the photodiodes of all pixel units of each pixel group of the image sensor to clear stored holes and photoelectrons before the image sensor is exposed; control the photodiodes of all pixel units of each pixel group of the image sensor to generate and store holes and photoelectrons during the exposure process of the image sensor; control the holes generated by the photodiodes of two pixel units on one side of each pixel group of the image sensor to flow into the hole collection circuit of each pixel group, and read the boost voltage of the hole collection circuit of each pixel group after the exposure of the image sensor is completed; control the photoelectrons generated by the photodiodes of two pixel units on the other side of each pixel group of the image sensor to flow into the electron collection circuit of each pixel group, and read the voltage drop voltage of the electron collection circuit of each pixel group; perform a difference operation on the voltage boost voltage of the hole collection circuit of each pixel group of the image sensor and a reset voltage to obtain the hole voltage of each pixel group; perform a difference operation on the voltage drop voltage of the electron collection circuit of each pixel group of the image sensor and a reset voltage to obtain the photoelectric voltage of each pixel group; wherein the one side is the left side or the right side.

[0237] In some embodiments of the present application, the processing module 1201 is specifically used to control the first transfer gate transistor, the first reset switch transistor, the second transfer gate transistor, and the second reset switch transistor of all pixel units of each pixel group of the image sensor to switch to the on state before the image sensor is exposed, so as to clear the holes and photoelectrons in the photodiodes of all pixel units of each pixel group.

[0238] In some embodiments of the present application, the processing module 1201 is specifically used to control the first transfer gate transistor, the first reset switch transistor, the second transfer gate transistor, and the second reset switch transistor of all pixel units of each pixel group of the image sensor to switch to an off state during the exposure process of the image sensor, so that the photodiodes of all pixel units of each pixel group generate and store holes and photoelectrons.

[0239] In some embodiments of the present application, the processing module 1201 is specifically used to control the first reset switch transistors and the first row selection switch transistors of all pixel units of each pixel group of the image sensor to switch to the on state to clear the first storage capacitor of the hole collection circuit of each pixel group of the image sensor; after the first storage capacitor of the hole collection circuit of each pixel group of the image sensor is cleared, control the first reset switch transistors of all pixel units of each pixel group to switch to the off state; after the first reset switch transistors of all pixel units of each pixel group of the image sensor are switched to the off state, read the voltage of the first storage capacitor of the hole collection circuit of each pixel group, and determine the read voltage as the reset voltage of the hole collection circuit.

[0240] In some embodiments of the present application, the processing module 1201 is specifically used to control the second reset switch transistors and the second row selection switch transistors of all pixel units of each pixel group of the image sensor to switch to the on state to clear the second storage capacitor of the electron collection circuit of each pixel group of the image sensor; after the second storage capacitor of the electron collection circuit of each pixel group of the image sensor is cleared, control the second reset switch transistors of all pixel units of each pixel group to switch to the off state; after the second reset switch transistors of all pixel units of each pixel group of the image sensor are switched to the off state, read the voltage of the second storage capacitor of the voltage collection circuit of each pixel group, and determine the read voltage as the reset voltage of the electron collection circuit.

[0241] In some embodiments of the present application, the processing module 1201 is specifically used to control the first transfer gate transistors of the two pixel units on one side of each pixel group of the image sensor to switch to the on state, so that the holes generated by the photodiodes of the two pixel units on one side of each pixel group flow into the first storage capacitor of the hole collection circuit of each pixel group; after the holes generated by the photodiodes of the two pixel units on one side of each pixel group of the image sensor flow into the first storage capacitor of the hole collection circuit of each pixel group, read the voltage of the first storage capacitor of the hole collection circuit of each pixel group, and determine the read voltage as the boost voltage of the hole collection circuit.

[0242] In some embodiments of the present application, the processing module 1201 is specifically used to control the second transfer gate transistors of the two pixel units on the other side of each pixel group of the image sensor to switch to the on state after the exposure of the image sensor is completed, so that the photoelectrons generated by the photodiodes of the two pixel units on the other side of each pixel group flow into the second storage capacitor of the electron collection circuit of each pixel group; after the photoelectrons generated by the photodiodes of the two pixel units on the other side of each pixel group of the image sensor flow into the second storage capacitor of the electron collection circuit of each pixel group, read the voltage of the second storage capacitor of the electron collection circuit of each pixel group of the image sensor, and determine the read voltage as the voltage drop voltage of the electron collection circuit.

[0243] The electronic device in the embodiments of the present application may be a mobile phone, a tablet computer, a laptop computer, a PDA, an in-vehicle electronic device, a mobile Internet device (MID), an augmented reality (AR) / virtual reality (VR) device, a robot, a wearable device, an ultra-mobile personal computer (UMPC), a netbook, or a personal digital assistant (PDA), etc. It may also be a server, a network attached storage (NAS), a personal computer (PC), a television (TV), an ATM or a self-service machine, etc., and the embodiments of the present application are not specifically limited.

[0244] The electronic device in the embodiment of the present application may be a terminal having an operating system. The operating system may be an Android operating system, an iOS operating system, or other possible operating systems, which are not specifically limited in the embodiment of the present application.

[0245] The electronic device provided in the embodiment of the present application can achieve Figures 9 to 11 To avoid repetition, the various processes implemented in any of the method embodiments will not be described again here.

[0246] Alternatively, as Figure 13As shown, an embodiment of the present application further provides an electronic device 1300, including a processor 1301, a memory 1302 and an image sensor 1303. The memory 1302 stores a program or instruction that can be run on the processor 1301. When the program or instruction is executed by the processor 1301, the various steps of the above-mentioned shooting method embodiment are implemented and the same technical effect can be achieved. To avoid repetition, it will not be repeated here.

[0247] It should be noted that the electronic devices in the embodiments of the present application include the mobile electronic devices and non-mobile electronic devices mentioned above.

[0248] Figure 14 This is a schematic diagram of the hardware structure of an electronic device provided in each embodiment of the present application.

[0249] The electronic device 1400 includes but is not limited to: a radio frequency unit 1401, a network module 1402, an audio output unit 1403, an input unit 1404, an image sensor 1405, a display unit 1406, a user input unit 1407, an interface unit 1408, a memory 1409 and a processor 1410.

[0250] Those skilled in the art will understand that the electronic device 1400 may also include a power source (such as a battery) to power each component, and the power source may be logically connected to the processor 1410 through a power management system, thereby implementing functions such as charging, discharging, and power consumption management through the power management system. Figure 14 The electronic device structure shown in the figure does not constitute a limitation on the electronic device. The electronic device may include more or fewer components than shown in the figure, or combine certain components, or arrange the components differently, which will not be repeated here.

[0251] In some embodiments of the present application, the processor 1410 is used to control at least one pixel unit of each pixel group of the image sensor to perform photoelectric conversion according to the working mode of the image sensor of the camera module, so as to obtain a hole voltage and a photoelectric voltage of each pixel group; the hole voltage is the voltage converted by the hole collection circuit of the pixel group, and the photoelectric voltage is the voltage converted by the electron collection circuit of the pixel group; the hole voltage of each pixel group is converted into a hole pixel value of each pixel group, and the photoelectric voltage of each pixel group is converted into a photoelectric pixel value of each pixel group; imaging is performed based on the hole pixel value and the photoelectric pixel value of each pixel group, and an image is output.

[0252] In some embodiments of the present application, since when the electronic device is shooting through a camera module, each pixel group of the image sensor of the camera module has a hole collection circuit and an electron collection circuit, the hole collection circuit can collect and store the positively charged holes generated by the photodiodes in the pixel group, and the electron collection circuit can collect and store the negatively charged photoelectrons generated by the photodiodes in the pixel group. Therefore, the positive and negative information generated by the photodiodes can be fully utilized, so that the voltage signal amount read by the processor from the image sensor of the camera module is doubled, and imaging is performed based on the read voltage signal amount, thereby improving the image quality of the imaged image.

[0253] In some embodiments of the present application, the operating modes of the image sensor include: a single-pixel unit shooting mode or a four-pixel unit focusing mode;

[0254] The single-pixel unit shooting mode is used to shoot images based on one pixel unit in each pixel group of the image sensor, and the four-pixel unit focusing mode is used to focus during the image shooting process based on all pixel units in each pixel group of the image sensor.

[0255] In some embodiments of the present application, the working mode of the image sensor is a single-pixel unit shooting mode;

[0256] The processor 1410 is specifically configured to perform a sum operation on the hole pixel value and the photoelectric pixel value of each pixel group to obtain a total pixel value of each pixel group; and generate an image according to the total pixel value of each pixel group.

[0257] In some embodiments of the present application, the image sensor operates in a four-pixel unit focus mode;

[0258] The processor 1410 is specifically configured to calculate phase information based on the hole pixel value and the photoelectric pixel value of each pixel group to obtain focus parameters of the image sensor; control the image sensor to focus according to the focus parameters and output an image.

[0259] In some embodiments of the present application, the working mode of the image sensor is a single-pixel unit shooting mode;

[0260] Processor 1410 is specifically configured to control the photodiode of the first pixel unit of each pixel group of the image sensor to clear stored holes and photoelectrons before the image sensor is exposed; control the photodiode of the first pixel unit of each pixel group of the image sensor to generate and store holes and photoelectrons during the exposure of the image sensor; control the holes generated by the photodiode of the first pixel unit of each pixel group of the image sensor to flow into the hole collection circuit of each pixel group and read the boost voltage of the hole collection circuit of each pixel group after the exposure of the image sensor is completed; control the photoelectrons generated by the photodiode of the first pixel unit of each pixel group of the image sensor to flow into the electron collection circuit of each pixel group and read the voltage drop voltage of the electron collection circuit of each pixel group; perform a difference operation on the voltage boost voltage of the hole collection circuit of each pixel group of the image sensor and a reset voltage to obtain the hole voltage of each pixel group; perform a difference operation on the voltage drop voltage of the electron collection circuit of each pixel group of the image sensor and a reset voltage to obtain the photoelectric voltage of each pixel group.

[0261] In some embodiments of the present application, the processor 1410 is specifically used to control the first transfer gate transistor, the first reset switch transistor, the second transfer gate transistor, and the second reset switch transistor of the first pixel unit of each pixel group of the image sensor to switch to the on state before the image sensor is exposed, so as to clear the holes and photoelectrons in the photodiode of the first pixel unit of each pixel group.

[0262] In some embodiments of the present application, the processor 1410 is specifically used to control the first transfer gate transistor, the first reset switch transistor, the second transfer gate transistor, and the second reset switch transistor of the first pixel unit of each pixel group of the image sensor to switch to the off state during the exposure process of the image sensor, so that the photodiode of the first pixel unit of each pixel group generates and stores holes and photoelectrons.

[0263] In some embodiments of the present application, the processor 1410 is specifically used to control the first reset switch transistor and the first row selection switch transistor of the first pixel unit of each pixel group of the image sensor to switch to the on state to clear the first storage capacitor of the hole collection circuit of each pixel group of the image sensor; after the first storage capacitor of the hole collection circuit of each pixel group of the image sensor is cleared, control the first reset switch transistor of the first pixel unit of each pixel group to switch to the off state; after the first reset switch transistor of the first pixel unit of each pixel group of the image sensor is switched to the off state, read the voltage of the first storage capacitor of the hole collection circuit of each pixel group, and determine the read voltage as the reset voltage of the hole collection circuit.

[0264] In some embodiments of the present application, the processor 1410 is specifically used to control the second reset switch transistor and the second row selection switch transistor of the first pixel unit of each pixel group of the image sensor to switch to the on state to clear the second storage capacitor of the electron collection circuit of each pixel group of the image sensor; after the second storage capacitor of the electron collection circuit of each pixel group of the image sensor is cleared, control the second reset switch transistor of the first pixel unit of each pixel group to switch to the off state; after the second reset switch transistor of the first pixel unit of each pixel group of the image sensor is switched to the off state, read the voltage of the second storage capacitor of the electron collection circuit of each pixel group, and determine the read voltage as the reset voltage of the electron collection circuit.

[0265] In some embodiments of the present application, the processor 1410 is specifically used to control the first transfer gate transistor of the first pixel unit of each pixel group of the image sensor to switch to the on state after the exposure of the image sensor is completed, so that the holes generated by the photodiode of the first pixel unit of each pixel group of the image sensor flow into the first storage capacitor of the hole collection circuit of each pixel group; after the holes generated by the photodiode of the first pixel unit of each pixel group of the image sensor flow into the first storage capacitor of the hole collection circuit of each pixel group, read the voltage of the first storage capacitor of the hole collection circuit of each pixel group of the image sensor, and determine the read voltage as the voltage boost voltage of the hole collection circuit.

[0266] In some embodiments of the present application, the processor 1410 is specifically used to control the second transfer gate transistor of the first pixel unit of each pixel group of the image sensor to switch to the on state after the exposure of the image sensor is completed, so that the photoelectrons generated by the photodiode of the first pixel unit of each pixel group flow into the second storage capacitor of the electron collection circuit of each pixel group; after the photoelectrons generated by the photodiode of the first pixel unit of each pixel group of the image sensor flow into the second storage capacitor of the electron collection circuit of each pixel group, read the voltage of the second storage capacitor of the electron collection circuit of each pixel group of the image sensor, and determine the read voltage as the voltage drop voltage of the electron collection circuit.

[0267] In some embodiments of the present application, the image sensor operates in a four-pixel unit focus mode;

[0268] Processor 1410 is specifically configured to control the photodiodes of all pixel units of each pixel group of the image sensor to clear stored holes and photoelectrons before the image sensor is exposed; control the photodiodes of all pixel units of each pixel group of the image sensor to generate and store holes and photoelectrons during the exposure of the image sensor; control the holes generated by the photodiodes of two pixel units on one side of each pixel group of the image sensor to flow into the hole collection circuit of each pixel group, and read the boost voltage of the hole collection circuit of each pixel group after the exposure of the image sensor is completed; control the photoelectrons generated by the photodiodes of two pixel units on the other side of each pixel group of the image sensor to flow into the electron collection circuit of each pixel group, and read the voltage drop voltage of the electron collection circuit of each pixel group; perform a difference operation on the voltage boost voltage of the hole collection circuit of each pixel group of the image sensor and a reset voltage to obtain the hole voltage of each pixel group; perform a difference operation on the voltage drop voltage of the electron collection circuit of each pixel group of the image sensor and a reset voltage to obtain the photoelectric voltage of each pixel group; wherein, the one side is the left side or the right side.

[0269] In some embodiments of the present application, the processor 1410 is specifically used to control the first transfer gate transistor, the first reset switch transistor, the second transfer gate transistor, and the second reset switch transistor of all pixel units of each pixel group of the image sensor to switch to the on state before the image sensor is exposed, so as to clear the holes and photoelectrons in the photodiodes of all pixel units of each pixel group.

[0270] In some embodiments of the present application, the processor 1410 is specifically used to control the first transfer gate transistor, the first reset switch transistor, the second transfer gate transistor, and the second reset switch transistor of all pixel units of each pixel group of the image sensor to switch to an off state during the exposure process of the image sensor, so that the photodiodes of all pixel units of each pixel group generate and store holes and photoelectrons.

[0271] In some embodiments of the present application, the processor 1410 is specifically used to control the first reset switch transistors and the first row selection switch transistors of all pixel units of each pixel group of the image sensor to switch to the on state to clear the first storage capacitor of the hole collection circuit of each pixel group of the image sensor; after the first storage capacitor of the hole collection circuit of each pixel group of the image sensor is cleared, control the first reset switch transistors of all pixel units of each pixel group to switch to the off state; after the first reset switch transistors of all pixel units of each pixel group of the image sensor are switched to the off state, read the voltage of the first storage capacitor of the hole collection circuit of each pixel group, and determine the read voltage as the reset voltage of the hole collection circuit.

[0272] In some embodiments of the present application, the processor 1410 is specifically used to control the second reset switch transistors and the second row selection switch transistors of all pixel units of each pixel group of the image sensor to switch to the on state to clear the second storage capacitor of the electron collection circuit of each pixel group of the image sensor; after the second storage capacitor of the electron collection circuit of each pixel group of the image sensor is cleared, control the second reset switch transistors of all pixel units of each pixel group to switch to the off state; after the second reset switch transistors of all pixel units of each pixel group of the image sensor are switched to the off state, read the voltage of the second storage capacitor of the voltage collection circuit of each pixel group, and determine the read voltage as the reset voltage of the electron collection circuit.

[0273] In some embodiments of the present application, the processor 1410 is specifically used to control the first transfer gate transistors of the two pixel units on one side of each pixel group of the image sensor to switch to the on state, so that the holes generated by the photodiodes of the two pixel units on one side of each pixel group flow into the first storage capacitor of the hole collection circuit of each pixel group; after the holes generated by the photodiodes of the two pixel units on one side of each pixel group of the image sensor flow into the first storage capacitor of the hole collection circuit of each pixel group, the voltage of the first storage capacitor of the hole collection circuit of each pixel group is read, and the read voltage is determined as the voltage boost voltage of the hole collection circuit.

[0274] In some embodiments of the present application, the processor 1410 is specifically used to control the second transfer gate transistors of the two pixel units on the other side of each pixel group of the image sensor to switch to the on state after the exposure of the image sensor is completed, so that the photoelectrons generated by the photodiodes of the two pixel units on the other side of each pixel group flow into the second storage capacitor of the electron collection circuit of each pixel group; after the photoelectrons generated by the photodiodes of the two pixel units on the other side of each pixel group of the image sensor flow into the second storage capacitor of the electron collection circuit of each pixel group, read the voltage of the second storage capacitor of the electron collection circuit of each pixel group of the image sensor, and determine the read voltage as the voltage drop voltage of the electron collection circuit.

[0275] It should be understood that in an embodiment of the present application, the input unit 1404 may include a graphics processing unit (GPU) 14041 and a microphone 14042, and the graphics processor 14041 processes the image data of a static picture or video obtained by an image capture device (such as a camera) in a video capture mode or an image capture mode. The display unit 1406 may include a display panel 14061, and the display panel 14061 may be configured in the form of a liquid crystal display, an organic light emitting diode, etc. The user input unit 1407 includes a touch panel 14071 and at least one of other input devices 14072. The touch panel 14071 is also called a touch screen. The touch panel 14071 may include two parts: a touch detection device and a touch controller. Other input devices 14072 may include, but are not limited to, a physical keyboard, function keys (such as volume control keys, switch keys, etc.), a trackball, a mouse, and an operating stick, which will not be repeated here.

[0276] The memory 1409 can be used to store software programs and various data. The memory 1409 may mainly include a first storage area for storing programs or instructions and a second storage area for storing data, wherein the first storage area may store an operating system, applications or instructions required for at least one function (such as a sound playback function, an image playback function, etc.). In addition, the memory 1409 may include a volatile memory or a non-volatile memory, or the memory 1409 may include both volatile and non-volatile memory. Among them, the non-volatile memory may be a read-only memory (ROM), a programmable read-only memory (PROM), an erasable programmable read-only memory (EPROM), an electrically erasable programmable read-only memory (EEPROM), or a flash memory. The volatile memory may be random access memory (RAM), static random access memory (SRAM), dynamic random access memory (DRAM), synchronous dynamic random access memory (SDRAM), double data rate synchronous dynamic random access memory (DDRSDRAM), enhanced synchronous dynamic random access memory (ESDRAM), synchronous link dynamic random access memory (SLDRAM), and direct RAM bus random access memory (DRRAM). The memory 1409 in the embodiment of the present application includes but is not limited to these and any other suitable types of memory.

[0277] Processor 1410 may include one or more processing units. Optionally, processor 1410 integrates an application processor and a modem processor. The application processor primarily handles operations related to the operating system, user interface, and application programs, while the modem processor primarily processes wireless communication signals, such as a baseband processor. It is understood that the modem processor may not be integrated into processor 1410.

[0278] An embodiment of the present application also provides a readable storage medium, on which a program or instruction is stored. When the program or instruction is executed by a processor, the various processes of the above-mentioned shooting method embodiment are implemented and the same technical effect can be achieved. To avoid repetition, it will not be repeated here.

[0279] The processor is the processor in the electronic device described in the above embodiment. The readable storage medium includes a computer readable storage medium, such as a computer read-only memory (ROM), a random access memory (RAM), a magnetic disk, or an optical disk.

[0280] An embodiment of the present application also provides a chip, which includes a processor and a communication interface, wherein the communication interface is coupled to the processor, and the processor is used to run programs or instructions to implement the various processes of the above-mentioned shooting method embodiment and achieve the same technical effect. To avoid repetition, it will not be repeated here.

[0281] It should be understood that the chip mentioned in the embodiments of the present application can also be called a system-level chip, a system chip, a chip system or a system-on-chip chip, etc.

[0282] An embodiment of the present application also provides a computer program product, which is stored in a storage medium and is executed by at least one processor to implement the various processes of the above-mentioned shooting method embodiment and can achieve the same technical effect. To avoid repetition, it will not be repeated here.

[0283] It should be noted that, in this article, the terms "comprise", "include" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device comprising a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the statement "comprises a ..." does not exclude the presence of other identical elements in the process, method, article or device comprising the element. In addition, it should be noted that the scope of the method in the embodiment of the present application is not limited to performing the functions in the order shown or discussed, and may also include performing the functions in a substantially simultaneous manner or in the opposite order according to the functions involved. For example, the described method may be performed in an order different from that described, and various steps may also be added, omitted, or combined. In addition, the features described with reference to certain examples may be combined in other examples.

[0284] Through the description of the above implementation methods, those skilled in the art can clearly understand that the above-mentioned embodiment methods can be implemented by means of software plus the necessary general hardware platform, and of course can also be implemented by hardware, but in many cases the former is a better implementation method. Based on this understanding, the technical solution of the present application is essentially or the part that contributes to the prior art can be embodied in the form of a computer software product, which is stored in a storage medium (such as ROM / RAM, magnetic disk, optical disk), including a number of instructions for enabling a terminal (such as a mobile phone, computer, server, or network device, etc.) to execute the methods described in each embodiment of the present application.

[0285] The embodiments of the present application are described above in conjunction with the accompanying drawings, but the present application is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the guidance of this application, ordinary technicians in this field can also make many forms without departing from the purpose of this application and the scope of protection of the claims, all of which are within the protection of this application.

Claims

1. A pixel unit, characterized in that: include: a photodiode, a first transfer gate transistor, a hole collection circuit, a second transfer gate transistor, and an electron collection circuit; The anode of the photodiode is connected to the hole collection circuit through the first transmission gate transistor, and the hole collection circuit is used to collect holes generated by the photodiode and convert the holes into hole voltage; The cathode of the photodiode is connected to the electron collection circuit through the second transfer gate transistor, and the electron collection circuit is used to collect photoelectrons generated by the photodiode and convert the photoelectrons into photoelectric voltage; In which, the hole collection circuit includes: a first reset switch transistor, a first storage capacitor, a first source follower and a first row selection switch transistor; the positive electrode of the photodiode is connected to the negative electrode of the first DC power supply through the first transmission gate transistor and the first reset switch transistor, and the positive electrode of the photodiode is grounded through the first transmission gate transistor and the first storage capacitor; the first storage capacitor is connected to the negative electrode of the first DC power supply through the first source follower, the first storage capacitor is connected to the negative electrode of the first DC power supply through the first reset switch transistor, and the first storage capacitor is connected to the first row selection switch transistor through the first source follower; the first row selection switch transistor is used to output the hole voltage converted by the hole collection circuit.

2. The pixel unit according to claim 1, wherein: The electron collection circuit includes: a second reset switch transistor, a second storage capacitor, a second source follower, and a second row selection switch transistor; In which, the cathode of the photodiode is connected to the positive electrode of the second DC power supply through the second transmission gate transistor and the second reset switch transistor, and the cathode of the photodiode is grounded through the second transmission gate transistor and the second storage capacitor; the second storage capacitor is connected to the positive electrode of the second DC power supply through the second source follower, the second storage capacitor is connected to the positive electrode of the second DC power supply through the second reset switch transistor, and the second storage capacitor is connected to the second row selection switch transistor through the second source follower; the second row selection switch transistor is used to output the photoelectric voltage converted by the electron collection circuit.

3. The pixel unit according to claim 1 or 2, characterized in that: The first transmission gate transistor is a P-type field effect transistor, and the second transmission gate transistor is an N-type field effect transistor.

4. An image sensor, characterized in that: include: A plurality of quad-Bayer pixel arrays, each quad-Bayer pixel array comprising four pixel groups, each pixel group comprising four pixel units according to any one of claims 1 to 3 arranged in a 2×2 manner; the four photodiodes of the four pixel units in each pixel group share a hole collection circuit and an electron collection circuit.

5. A camera module, characterized in that: The camera module includes the image sensor described in claim 4.

6. An electronic device, characterized in that: The electronic device includes a processor and the camera module according to claim 5.

7. A shooting method, performed by the electronic device according to claim 6, characterized in that: The method comprises: The processor controls at least one pixel unit of each pixel group of the image sensor to perform photoelectric conversion according to the operating mode of the image sensor of the camera module, thereby obtaining a hole voltage and a photoelectric voltage of each pixel group; the hole voltage is a voltage converted by a hole collection circuit of the pixel group, and the photoelectric voltage is a voltage converted by an electron collection circuit of the pixel group; The processor converts the hole voltage of each pixel group into a hole pixel value of each pixel group, and converts the photoelectric voltage of each pixel group into a photoelectric pixel value of each pixel group; The processor performs imaging based on the hole pixel value and the photoelectric pixel value of each pixel group and outputs an image.

8. The method according to claim 7, characterized in that The working modes of the image sensor include: single-pixel unit shooting mode or four-pixel unit focusing mode; The single-pixel unit shooting mode is used to shoot images based on one pixel unit in each pixel group of the image sensor, and the four-pixel unit focusing mode is used to focus during the image shooting process based on all pixel units in each pixel group of the image sensor.

9. The method according to claim 8, characterized in that The working mode of the image sensor is a single-pixel unit shooting mode; The processor performs imaging based on the hole pixel value and the photoelectric pixel value of each pixel group to obtain an image, including: The processor performs a sum operation on the hole pixel value and the photoelectric pixel value of each pixel group to obtain a total pixel value of each pixel group; The processor generates an image based on the total pixel value of each pixel group.

10. The method according to claim 8, characterized in that The working mode of the image sensor is a four-pixel unit focus mode; The processor performs imaging based on the hole pixel value and the photoelectric pixel value of each pixel group and outputs an image, including: The processor calculates phase information based on the hole pixel value and the photoelectric pixel value of each pixel group to obtain the focus parameter of the image sensor; The processor controls the image sensor to focus according to the focus parameters and output an image.

11. The method according to claim 8, characterized in that The working mode of the image sensor is a single-pixel unit shooting mode; The controlling at least one pixel unit of each pixel group of the image sensor to perform photoelectric conversion to obtain a hole voltage and a photoelectric voltage of each pixel group includes: Before the image sensor is exposed, the processor controls the photodiode of the first pixel unit of each pixel group of the image sensor to clear the stored holes and photoelectrons; During exposure of the image sensor, the processor controls the photodiode of the first pixel unit of each pixel group of the image sensor to generate and store holes and photoelectrons; After the image sensor is exposed, the processor controls the holes generated by the photodiode of the first pixel unit of each pixel group of the image sensor to flow into the hole collection circuit of each pixel group, and the processor reads the voltage boost voltage of the hole collection circuit of each pixel group; the processor controls the photoelectrons generated by the photodiode of the first pixel unit of each pixel group of the image sensor to flow into the electron collection circuit of each pixel group, and the processor reads the voltage drop voltage of the electron collection circuit of each pixel group; The processor performs a difference operation on the boost voltage and reset voltage of the hole collection circuit of each pixel group of the image sensor to obtain the hole voltage of each pixel group; and performs a difference operation on the drop voltage and reset voltage of the electron collection circuit of each pixel group of the image sensor to obtain the photoelectric voltage of each pixel group.

12. The method according to claim 11, characterized in that Before the image sensor is exposed, the processor controls the photodiode of the first pixel unit of each pixel group of the image sensor to clear the stored holes and photoelectrons, including: Before the image sensor is exposed, the processor controls the first transfer gate transistor, the first reset switch transistor, the second transfer gate transistor, and the second reset switch transistor of the first pixel unit of each pixel group of the image sensor to switch to the on state to clear the holes and photoelectrons in the photodiode of the first pixel unit of each pixel group.

13. The method according to claim 11, characterized in that During the exposure process of the image sensor, the processor controls the photodiode of the first pixel unit of each pixel group of the image sensor to generate and store holes and photoelectrons, including: During the exposure process of the image sensor, the processor controls the first transfer gate transistor, the first reset switch transistor, the second transfer gate transistor and the second reset switch transistor of the first pixel unit of each pixel group of the image sensor to switch to the off state, so that the photodiode of the first pixel unit of each pixel group generates and stores holes and photoelectrons.

14. The method according to claim 11, characterized in that Before the exposure of the image sensor ends, the method further includes: The processor controls the first reset switch transistor and the first row select switch transistor of the first pixel unit of each pixel group of the image sensor to switch to a conductive state to empty the first storage capacitor of the hole collection circuit of each pixel group; After the first storage capacitor of the hole collection circuit of each pixel group of the image sensor is emptied, the processor controls the first reset switch transistor of the first pixel unit of each pixel group to switch to an off state; After the first reset switch transistor of the first pixel unit of each pixel group of the image sensor is switched to an off state, the processor reads the voltage of the first storage capacitor of the hole collection circuit of each pixel group and determines the read voltage as the reset voltage of the hole collection circuit.

15. The method according to claim 11, characterized in that Before the exposure of the image sensor ends, the method further includes: The processor controls the second reset switch transistor and the second row select switch transistor of the first pixel unit of each pixel group of the image sensor to switch to a conductive state to clear the second storage capacitor of the electron collection circuit of each pixel group; After the second storage capacitor of the electron collection circuit of each pixel group of the image sensor is emptied, the processor controls the second reset switch transistor of the first pixel unit of each pixel group to switch to an off state; After the second reset switch transistor of the first pixel unit of each pixel group of the image sensor is switched to an off state, the processor reads the voltage of the second storage capacitor of the electron collection circuit of each pixel group and determines the read voltage as the reset voltage of the electron collection circuit.

16. The method according to claim 11, characterized in that After the exposure of the image sensor is completed, the processor controls the holes generated by the photodiode of the first pixel unit of each pixel group of the image sensor to flow into the hole collection circuit of each pixel group, and the processor reads the boost voltage of the hole collection circuit of each pixel group, including: After the exposure of the image sensor ends, the processor controls the first transfer gate transistor of the first pixel unit of each pixel group of the image sensor to switch to a conductive state, so that holes generated by the photodiode of the first pixel unit of each pixel group of the image sensor flow into the first storage capacitor of the hole collection circuit of each pixel group; After the holes generated by the photodiode of the first pixel unit of each pixel group of the image sensor flow into the first storage capacitor of the hole collection circuit of each pixel group, the processor reads the voltage of the first storage capacitor of the hole collection circuit of each pixel group of the image sensor and determines the read voltage as the voltage boost voltage of the hole collection circuit.

17. The method according to claim 11, characterized in that The processor controls the photoelectrons generated by the photodiode of the first pixel unit of each pixel group of the image sensor to flow into the electron collection circuit of each pixel group, and the processor reads the voltage drop of the electron collection circuit of each pixel group, including: After the image sensor is exposed, the processor controls the second transfer gate transistor of the first pixel unit of each pixel group of the image sensor to switch to a conductive state, so that the photoelectrons generated by the photodiode of the first pixel unit of each pixel group flow into the second storage capacitor of the electron collection circuit of each pixel group; After the photoelectrons generated by the photodiode of the first pixel unit of each pixel group of the image sensor flow into the second storage capacitor of the electron collection circuit of each pixel group, the processor reads the voltage of the second storage capacitor of the electron collection circuit of each pixel group of the image sensor and determines the read voltage as the voltage drop voltage of the electron collection circuit.

18. The method according to claim 8, characterized in that The working mode of the image sensor is a four-pixel unit focus mode; The controlling at least one pixel unit of each pixel group of the image sensor to perform photoelectric conversion to obtain a hole voltage and a photoelectric voltage of each pixel group includes: Before the image sensor is exposed, the processor controls the photodiodes of all pixel units of each pixel group of the image sensor to clear stored holes and photoelectrons; During the exposure process of the image sensor, the processor controls the photodiodes of all pixel units of each pixel group of the image sensor to generate and store holes and photoelectrons; After the exposure of the image sensor is completed, the processor controls the holes generated by the photodiodes of the two pixel units on one side of each pixel group of the image sensor to flow into the hole collection circuit of each pixel group, and the processor reads the voltage boost voltage of the hole collection circuit of each pixel group; the processor controls the photoelectrons generated by the photodiodes of the two pixel units on the other side of each pixel group of the image sensor to flow into the electron collection circuit of each pixel group, and the processor reads the voltage drop voltage of the electron collection circuit of each pixel group; the one side is the left side or the right side; The processor performs a difference operation on the boost voltage and reset voltage of the hole collection circuit of each pixel group of the image sensor to obtain the hole voltage of each pixel group; and performs a difference operation on the drop voltage and reset voltage of the electron collection circuit of each pixel group of the image sensor to obtain the photoelectric voltage of each pixel group.

19. The method according to claim 18, characterized in that Before the image sensor is exposed, the processor controls the photodiodes of all pixel units of each pixel group of the image sensor to clear stored holes and photoelectrons, including: Before the image sensor is exposed, the processor controls the first transfer gate transistor, the first reset switch transistor, the second transfer gate transistor, and the second reset switch transistor of all pixel units of each pixel group of the image sensor to switch to the on state to clear the holes and photoelectrons in the photodiodes of all pixel units of each pixel group.

20. The method according to claim 18, wherein During the exposure process of the image sensor, the processor controls the photodiodes of all pixel units of each pixel group of the image sensor to generate and store holes and photoelectrons, including: During the exposure process of the image sensor, the processor controls the first transfer gate transistor, the first reset switch transistor, the second transfer gate transistor and the second reset switch transistor of all pixel units of each pixel group of the image sensor to switch to the off state, so that the photodiodes of all pixel units of each pixel group generate and store holes and photoelectrons.

21. The method according to claim 18, wherein Before the exposure of the image sensor ends, the method further includes: The processor controls the first reset switch transistors and the first row select switch transistors of all pixel units of each pixel group of the image sensor to switch to a conductive state to empty the first storage capacitor of the hole collection circuit of each pixel group; After the first storage capacitor of the hole collection circuit of each pixel group of the image sensor is emptied, the processor controls the first reset switch transistors of all pixel units of each pixel group to switch to an off state; After the first reset switch transistors of all pixel units of each pixel group of the image sensor are switched to an off state, the processor reads the voltage of the first storage capacitor of the hole collection circuit of each pixel group and determines the read voltage as the reset voltage of the hole collection circuit.

22. The method according to claim 18, wherein Before the exposure of the image sensor ends, the method further includes: The processor controls the second reset switch transistors and the second row select switch transistors of all pixel cells of each pixel group of the image sensor to switch to a conductive state to clear the second storage capacitor of the electron collection circuit of each pixel group; After the second storage capacitor of the electron collection circuit of each pixel group of the image sensor is emptied, the processor controls the second reset switch transistors of all pixel units of each pixel group to switch to an off state; After the second reset switch transistors of all pixel units of each pixel group of the image sensor are switched to the off state, the processor reads the voltage of the second storage capacitor of the voltage collection circuit of each pixel group and determines the read voltage as the reset voltage of the electron collection circuit.

23. The method according to claim 18, wherein After the exposure of the image sensor is completed, the processor controls the holes generated by the photodiodes of the two pixel units on one side of each pixel group of the image sensor to flow into the hole collection circuit of each pixel group, and the processor reads the boost voltage of the hole collection circuit of each pixel group, including: The processor controls the first transfer gate transistors of the two pixel units on one side of each pixel group of the image sensor to switch to a conductive state, so that the holes generated by the photodiodes of the two pixel units on one side of each pixel group flow into the first storage capacitor of the hole collection circuit of each pixel group; After the holes generated by the photodiodes of the two pixel units on one side of each pixel group of the image sensor flow into the first storage capacitor of the hole collection circuit of each pixel group, the processor reads the voltage of the first storage capacitor of the hole collection circuit of each pixel group and determines the read voltage as the voltage boost voltage of the hole collection circuit.

24. The method according to claim 18, wherein The processor controls the photoelectrons generated by the photodiodes of the two pixel units on the other side of each pixel group of the image sensor to flow into the electron collection circuit of each pixel group, and the processor reads the voltage drop of the electron collection circuit of each pixel group, including: After the exposure of the image sensor is completed, the processor controls the second transfer gate transistors of the two pixel units on the other side of each pixel group of the image sensor to switch to a conductive state, so that the photoelectrons generated by the photodiodes of the two pixel units on the other side of each pixel group flow into the second storage capacitor of the electron collection circuit of each pixel group; After the photoelectrons generated by the photodiodes of the two pixel units on the other side of each pixel group of the image sensor flow into the second storage capacitor of the electron collection circuit of each pixel group, the processor reads the voltage of the second storage capacitor of the electron collection circuit of each pixel group of the image sensor and determines the read voltage as the voltage drop voltage of the electron collection circuit.

25. An electronic device, characterized in that: The apparatus comprises a processor, a memory and an image sensor, wherein the memory stores a program or instruction that can be run on the processor, and when the program or instruction is executed by the processor, the steps of the shooting method according to any one of claims 7 to 24 are implemented.

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