Insulated sealed beam spot adjustable target electrode structure for material ion irradiation

Abstract

The invention relates to the technical field of ion irradiation devices, in particular to an insulated sealed beam spot adjustable target electrode structure for material ion irradiation. According to the technical scheme, the electrode comprises a cylindrical electrode, the bottom of the cylindrical electrode is in threaded connection with an insulating supporting base, and a cooling mechanism is arranged between the cylindrical electrode and the insulating supporting base; a target is arranged in the cylindrical electrode, and a height adjusting mechanism is arranged between the insulating supporting base and the target; and a spiral water cooling hose is connected between the target and the cooling mechanism. Through the adjustable ion energy and beam spot size, the device can adapt to irradiation requirements of different materials, a good technical basis is provided for the target electrode structure design of the ion irradiation device, heat generated by ion sputtering bombardment is taken away, the electrode is prevented from being deformed and damaged due to temperature rise, and the continuity and stability of the ion irradiation process are guaranteed.

Description

Technical Field

[0001] The invention relates to the technical field of ion irradiation devices, and in particular to an insulating sealed beam spot adjustable target electrode structure for material ion irradiation. Background Art

[0002] Ion irradiation is an important material modification technology that changes the physical, chemical, structural and mechanical properties of materials by injecting high-energy ion beams into the surface or interior of the material. This process involves the interaction between ions and materials, such as atomic replacement, lattice distortion, point defect generation, surface etching and doping, and other microscopic effects. This technology has a wide range of applications in semiconductor manufacturing, materials science, nuclear industry, and biomedicine. For example: in the semiconductor manufacturing process, ion implantation technology is often used to precisely dope ions (such as boron, phosphorus, arsenic, etc.) into silicon wafers to control their conductive properties; in materials science, such as in the aerospace and automotive industries, ion irradiation can introduce surface compressive stress to improve the surface hardness and wear resistance of turbine blades and engine components; in the nuclear industry, ion irradiation is used to simulate radiation environments to study the performance and life of nuclear materials under high radiation fields, to study the irradiation damage and durability of nuclear fuel and cladding materials (such as zirconium alloys, ceramic fuels) under extreme conditions, or to screen materials that require fusion energy reactors to withstand extremely high heat fluxes and neutron irradiation through high-energy ion beam irradiation tests. With the development of ion irradiation technology, the demand and requirements for irradiation technology are also increasing.

[0003] However, during the operation of the irradiation equipment, high requirements are placed on the target electrode structure of the equipment: 1. When extracting a high-energy ion beam, the electrode is susceptible to ion sputtering bombardment, resulting in temperature rise, deformation and damage, requiring additional water cooling protection. 2. Ion irradiation is always in a vacuum environment. 3. The extraction electrode and the target are at a high voltage potential, and insulation isolation protection must be set. At the same time, during the ion irradiation process, the size of the beam spot area directly affects the size and uniformity of the material modification area, which in turn determines the modification effect and product performance. However, traditional ion irradiation systems typically rely on fixed optical systems (such as electromagnetic lenses and apertures) to control the beam spot size, and this method has limited flexibility and accuracy.

[0004] Therefore, the present application proposes an insulating sealed beam spot adjustable target electrode structure for material ion irradiation. Summary of the invention

[0005] The purpose of the present invention is to address the problem in the background technology that during the operation of the irradiation equipment, when the target electrode structure of the equipment draws out a high-energy ion beam, the electrode is easily bombarded by ion sputtering, resulting in temperature rise, deformation and damage. An insulating sealed beam spot adjustable target electrode structure for material ion irradiation is proposed.

[0006] The technical solution of the present invention is an insulating sealed beam spot adjustable target electrode structure for material ion irradiation, comprising:

[0007] A cylindrical electrode, wherein the bottom of the cylindrical electrode is threadedly connected to an insulating support base, and a cooling mechanism is provided between the cylindrical electrode and the insulating support base;

[0008] A target is arranged in the cylindrical electrode, and a height adjustment mechanism is arranged between the insulating support base and the target;

[0009] A spiral water cooling hose is connected between the target and the cooling mechanism.

[0010] Optionally, the cooling mechanism includes an electrode interlayer water cooling channel opened on the cylindrical electrode, a base water inlet and a base water outlet are respectively opened on both sides of the insulating support base, and the electrode interlayer water cooling channel is connected to the base water inlet and the base water outlet.

[0011] Optionally, there are two spiral water-cooling hoses, and the bottoms of the two spiral water-cooling hoses are respectively connected to the water inlet and the water outlet of the base.

[0012] Optionally, the inner diameter of the spiral water-cooling hose is 10 mm, the outer diameter of the spiral water-cooling hose is 12 mm, and the spiral water-cooling hose is an elastic hose.

[0013] Optionally, the height adjustment mechanism is a height-adjustable custom screw, which is assembled from an upper screw part, a lower screw part and an annular nut. A nut rotation groove is provided on the lower screw part, and the annular nut is rotatably sleeved on the nut rotation groove of the lower screw part. A threaded hole matching the upper screw part is provided at the upper end of the annular nut. The upper screw part is threadedly connected to the inner wall of the threaded hole, the top target of the upper screw part is fixedly connected, and the bottom of the lower screw part is fixedly connected to the insulating support base.

[0014] Optionally, the bottom of the cylindrical electrode is provided with a fine-pitch thread, and the insulating support base is provided with a thread adapted to the fine-pitch thread.

[0015] Optionally, the target is a cylindrical metal target with a diameter of 111 mm and a thickness of 15 mm.

[0016] Optionally, the insulating support base is made of polytetrafluoroethylene or PEEK.

[0017] Optionally, an O-shaped sealing groove is provided on the outermost ring of the insulating support base.

[0018] Compared with the prior art, the present invention has at least one of the following beneficial technical effects:

[0019] Under the premise of ensuring the overall vacuum and insulation of the device, the present invention designs a target electrode structure with an adjustable beam spot for material ion irradiation. Through adjustable ion energy and beam spot size, the device can adapt to the irradiation requirements of different materials, providing a good technical basis for the design of the target electrode structure of the ion irradiation device.

[0020] The electrode interlayer water cooling channel is combined with the water inlet and outlet of the base to form an efficient water cooling system for the cylindrical electrode, which can promptly remove the heat generated by ion sputtering bombardment, prevent the electrode from heating up, deforming and damaging, and ensure the continuity and stability of the ion irradiation process.

[0021] The present invention provides an adjustable ion energy and beam spot size, so that the device can adapt to the irradiation requirements of different materials, provide a good technical basis for the target electrode structure design of the ion irradiation device, take away the heat generated by ion sputtering bombardment, prevent the electrode from heating up, deforming and damaging, and ensure the continuity and stability of the ion irradiation process. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 The schematic diagram is a structural diagram of an insulating sealed beam spot adjustable target electrode structure for material ion irradiation;

[0023] Figure 2 It is a schematic diagram of the structure of a cylindrical electrode;

[0024] Figure 3 Schematic diagram of the structure of the height-adjustable custom screw.

[0025] Figure numerals: 1. cylindrical electrode; 2. electrode interlayer water-cooling channel; 3. target; 4. height-adjustable custom screw; 5. spiral water-cooling hose; 6. insulating support base; 7. base water inlet; 8. base water outlet; 9. fine thread; 101. electrode outer wall; 102. electrode inner wall; 401. screw upper part; 402. ring nut; 403. nut rotation groove; 404. screw lower part. DETAILED DESCRIPTION

[0026] The technical solution of the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all of the embodiments.

[0027] The components of the embodiments of the present invention generally described and shown in the drawings herein may be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present invention provided in the drawings is not intended to limit the scope of the claimed invention, but merely represents selected embodiments of the present invention.

[0028] Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making any creative work shall fall within the scope of protection of the present invention.

[0029] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", and "third" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance.

[0030] It should be noted that the terms "include", "comprises" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0031] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0032] Example

[0033] like Figure 1-Figure 2 As shown, the present invention proposes an insulated sealed beam spot adjustable target electrode structure for material ion irradiation, including a cylindrical electrode 1, the bottom of the cylindrical electrode 1 is threadedly connected to an insulating support base 6, the bottom of the cylindrical electrode 1 is provided with a fine thread 9, and the insulating support base 6 is provided with a thread adapted to the fine thread 9, so as to realize the connection between the cylindrical electrode 1 and the insulating support base 6, and the height of the cylindrical electrode 1 can be adjusted to a desired height by rotation.

[0034] A target 3 is arranged in the cylindrical electrode 1. The target 3 is a cylindrical metal target. The diameter of the target 3 is 111 mm and the thickness of the target 3 is 15 mm. A height adjustment mechanism is arranged between the insulating support base 6 and the target 3. The purpose of controlling the beam spot size is achieved by adjusting the height of the cylindrical electrode 1 and the target 3 together. Among them, the height adjustment mechanism is a height-adjustable custom screw 4. The height-adjustable custom screw 4 is assembled by a screw upper part 401, a screw lower part 404 and a ring nut 402. A nut rotation groove 403 is provided on the screw lower part 404. The ring nut 402 is rotatably sleeved on the nut rotation groove 403 of the screw lower part 404. A threaded hole adapted to the screw upper part 401 is provided at the upper end of the ring nut 402. The screw upper part 401 is threadedly connected to the inner wall of the threaded hole. The top target 3 of the screw upper part 401 is fixedly connected, and the bottom of the screw lower part 404 is fixedly connected to the insulating support base 6. The height of the target 3 is adjusted by slowly rotating the annular nut 402 to drive the upper part 401 of the screw rod to adjust its height.

[0035] It is worth noting that a cooling mechanism is arranged between the cylindrical electrode 1 and the insulating support base 6; the cooling mechanism includes an electrode interlayer water cooling channel 2 opened on the cylindrical electrode 1, and the cylindrical electrode 1 includes an electrode outer wall 101 and an electrode inner wall 102 welded together to form an electrode interlayer water cooling channel 2, and a base water inlet 7 and a base water outlet 8 are respectively opened on both sides of the insulating support base 6, and the electrode interlayer water cooling channel 2 is connected to the base water inlet 7 and the base water outlet 8.

[0036] In this embodiment, a spiral water-cooling hose 5 is connected between the target 3 and the cooling mechanism, the inner diameter of the spiral water-cooling hose 5 is 10 mm, the outer diameter of the spiral water-cooling hose 5 is 12 mm, and the spiral water-cooling hose 5 is an elastic hose. There are two spiral water-cooling hoses 5, and the bottoms of the two spiral water-cooling hoses 5 are respectively connected to the base water inlet 7 and the base water outlet 8. The spiral water-cooling hose 5 provides coolant circulation for the target 3, and the coolant can use fluorinated liquid or other insulating coolants such as deionized water.

[0037] The insulating support base 6 is made of polytetrafluoroethylene or PEEK, and an O-shaped sealing groove is arranged on the outermost ring of the insulating support base 6 to ensure the vacuum sealing of the overall structure.

[0038] The coolant enters through the water inlet 7 of the base, is diverted to the target 3 and the electrode interlayer water cooling channel 2, takes away the heat of the cylindrical electrode 1 and the target 3, flows through the spiral water cooling hose 5, then flows back to the water outlet 8 of the base, and finally flows back to the water cooler for heat exchange.

[0039] The above specific embodiments are only several optional embodiments of the present invention. Based on the technical solutions of the present invention and the relevant inspirations of the above embodiments, those skilled in the art can make various alternative improvements and combinations to the above specific embodiments.

Claims

1. An insulating sealed beam spot adjustable target electrode structure for material ion irradiation, characterized in that: include: A cylindrical electrode (1), wherein the bottom of the cylindrical electrode (1) is threadedly connected to an insulating support base (6), and a cooling mechanism is provided between the cylindrical electrode (1) and the insulating support base (6); A target (3) is arranged inside the cylindrical electrode (1), and a height adjustment mechanism is arranged between the insulating support base (6) and the target (3); A spiral water cooling hose (5) is connected between the target (3) and the cooling mechanism.

2. The insulating sealed beam spot adjustable target electrode structure for material ion irradiation according to claim 1, characterized in that: The cooling mechanism comprises an electrode interlayer water cooling channel (2) provided on the cylindrical electrode (1); a base water inlet (7) and a base water outlet (8) are respectively provided on two sides of the insulating support base (6); and the electrode interlayer water cooling channel (2) is in communication with the base water inlet (7) and the base water outlet (8).

3. The insulating sealed beam spot adjustable target electrode structure for material ion irradiation according to claim 2, characterized in that: There are two spiral water-cooling hoses (5), and the bottoms of the two spiral water-cooling hoses (5) are respectively connected to the base water inlet (7) and the base water outlet (8).

4. The insulating sealed beam spot adjustable target electrode structure for material ion irradiation according to claim 3, characterized in that: The inner diameter of the spiral water-cooling hose (5) is 10 mm, the outer diameter of the spiral water-cooling hose (5) is 12 mm, and the spiral water-cooling hose (5) is an elastic hose.

5. The insulating sealed beam spot adjustable target electrode structure for material ion irradiation according to claim 1, characterized in that: The height adjustment mechanism is a height-adjustable custom screw (4), which is assembled from a screw upper part (401), a screw lower part (404) and a ring nut (402). A nut rotation groove (403) is provided on the screw lower part (404). The ring nut (402) is rotatably sleeved on the nut rotation groove (403) of the screw lower part (404). A threaded hole matching the screw upper part (401) is provided on the upper end of the ring nut (402). The screw upper part (401) is threadedly connected to the inner wall of the threaded hole. The top target (3) of the screw upper part (401) is fixedly connected, and the bottom of the screw lower part (404) is fixedly connected to the insulating support base (6).

6. The insulating sealed beam spot adjustable target electrode structure for material ion irradiation according to claim 1, characterized in that: The bottom of the cylindrical electrode (1) is provided with a fine pitch thread (9), and the insulating support base (6) is provided with a thread matching the fine pitch thread (9).

7. The insulating sealed beam spot adjustable target electrode structure for material ion irradiation according to claim 1, characterized in that: The target (3) is a cylindrical metal target, the diameter of the target (3) is 111 mm, and the thickness of the target (3) is 15 mm.

8. The insulating sealed beam spot adjustable target electrode structure for material ion irradiation according to claim 1, characterized in that: The insulating support base (6) is made of polytetrafluoroethylene or PEEK.

9. The insulating sealed beam spot adjustable target electrode structure for material ion irradiation according to claim 1, characterized in that: The outermost ring of the insulating support base (6) is provided with an O-shaped sealing groove.

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