Deep ultraviolet light-emitting diode with diamond nano-column structure and preparation method of deep ultraviolet light-emitting diode

Abstract

The invention relates to a deep ultraviolet light-emitting diode with a diamond nano-column structure and a preparation method of the deep ultraviolet light-emitting diode. The deep ultraviolet light-emitting diode comprises a substrate layer, a nucleating layer, an n-type GaN layer, an n-type active region, an electron blocking layer and a p-type region which are sequentially stacked from top to bottom, the p-type region comprises a plurality of diamond nano-columns arranged at intervals, and a hydrogen terminal is formed on at least part of the surface of each diamond nano-column; an N-type electrode is also arranged on the lower surface of the n-type GaN layer, and the N-type electrode and the n-type active region are arranged at an interval; a P-type electrode is further arranged on the lower surface of the p-type region, and the bottom of the N-type electrode is flush with the bottom of the P-type electrode; and a substrate is arranged on the lower surfaces of the N-type electrode and the P-type electrode. The device can greatly improve the light-emitting efficiency of the deep ultraviolet light-emitting diode, better exert the heat dissipation performance of the device and improve the use performance of the device.

Description

Technical Field

[0001] The invention belongs to the technical field of semiconductor devices, and in particular relates to a deep ultraviolet light emitting diode with a diamond nanocolumn structure and a preparation method thereof. Background Art

[0002] Deep ultraviolet light-emitting diodes, abbreviated as UVC LEDs in English, refer to light-emitting diodes that can emit ultraviolet light with a wavelength in the range of 100 to 280 nanometers (nm). At present, deep ultraviolet light-emitting diodes are mainly used in disinfection, air quality, water and wastewater quality monitoring, as well as detection of hazardous substances and medical diagnosis. The light-emitting principle of deep ultraviolet light-emitting diodes is similar to that of ordinary LEDs, both of which are based on the electroluminescence phenomenon of semiconductor materials. When current passes through a deep ultraviolet light-emitting diode, the recombination of holes and electrons inside it releases energy, generating ultraviolet light of a specific wavelength.

[0003] However, the hole concentration in existing deep ultraviolet light-emitting diodes is low, which seriously limits the recombination probability of holes and electrons in the active region of the deep ultraviolet light-emitting diodes, thereby greatly restricting the luminous efficiency of the deep ultraviolet light-emitting diodes. Summary of the invention

[0004] In order to solve the above problems existing in the prior art, the present invention provides a deep ultraviolet light-emitting diode with a diamond nanorod structure and a preparation method thereof. The technical problem to be solved by the present invention is achieved by the following technical solutions:

[0005] In a first aspect, the present invention provides a deep ultraviolet light-emitting diode with a diamond nanorod structure, comprising:

[0006] A substrate layer, a nucleation layer, an n-type GaN layer, an n-type active region, an electron blocking layer and a p-type region are stacked in sequence from top to bottom; the p-type region includes a plurality of spaced diamond nanocolumns, and a hydrogen terminal is formed on at least part of the surface of each diamond nanocolumn; an N-type electrode is also arranged on the side of the n-type GaN layer where the n-type active region is arranged, and the N-type electrode is spaced from the n-type active region; a P-type electrode is also arranged on part of the surface of the p-type region away from the electron blocking layer; a substrate is arranged on the side of the N-type electrode away from the n-type GaN layer and on the side of the P-type electrode away from the p-type region.

[0007] In some embodiments, the diameter of each diamond nanocolumn ranges from 150 nm to 250 nm, the height ranges from 0.3 μm to 1.5 μm, and the spacing between two adjacent diamond nanocolumns ranges from 30 nm to 80 nm.

[0008] In some embodiments, the substrate layer, the nucleation layer, and the n-type GaN layer have the same width, the n-type active region, the electron blocking layer, and the p-type region have the same width, and the n-type GaN layer has a width greater than that of the n-type active region.

[0009] In some embodiments, the n-type active region includes a plurality of Al x Ga 1-x N layer and multiple Al y Ga 1-y The N layer is grown alternately, and the doping concentration is 1×10 16 cm -3 ~1×10 19 cm -3 , each Al x Ga 1-x The thickness of the N layer ranges from 4nm to 7nm. y Ga 1-y The thickness of the N layer ranges from 6 nm to 12 nm, and the width of the n-type active region ranges from 300 μm to 400 μm, wherein the value of x ranges from 0 to 0.6, and the value of y ranges from 0.4 to 0.8.

[0010] In some embodiments, the material of the substrate layer includes a patterned sapphire substrate, and the width of the substrate layer ranges from 500 μm to 600 μm.

[0011] In some embodiments, the material of the nucleation layer includes GaN, and the thickness of the nucleation layer ranges from 20 nm to 40 nm.

[0012] In some embodiments, the thickness of the n-type GaN layer is 2 μm to 4 μm, and the doping concentration is 1×10 16 cm -3 ~1×10 19 cm -3 .

[0013] In some embodiments, the material of the electron blocking layer is Al z Ga 1-z N, doping concentration is 1×10 16 cm -3 ~1×10 19 cm -3 , the thickness ranges from 15nm to 25nm, where the value range of z is 0.3 to 0.75.

[0014] In some embodiments, the width of the N-type electrode ranges from 100 μm to 150 μm, and the width of the P-type electrode ranges from 100 μm to 150 μm.

[0015] In a second aspect, the present invention provides a method for preparing a deep ultraviolet light-emitting diode with a diamond nanorod structure, wherein the method is used to prepare the deep ultraviolet light-emitting diode with a diamond nanorod structure as described in the first aspect; the method comprises:

[0016] A nucleation layer is prepared on a pretreated substrate layer; an n-type GaN layer is grown on the nucleation layer; an n-type active region is prepared on the n-type GaN layer; an electron blocking layer is prepared on the n-type active region; a p-type region is prepared on the electron blocking layer, wherein the p-type region comprises a plurality of spaced diamond nanocolumns, and a hydrogen terminal is formed on at least part of the surface of each diamond nanocolumn; an N-type electrode is sputtered on the n-type GaN layer, and a P-type electrode is sputtered on part of the surface of the p-type region away from the electron blocking layer; a side of the N-type electrode away from the n-type GaN layer and a side of the P-type electrode away from the p-type region are welded on a substrate to obtain a deep ultraviolet light-emitting diode with a diamond nanocolumn structure.

[0017] Compared with the prior art, the present invention has the following beneficial effects:

[0018] Aiming at the problem that the hole concentration in the existing deep ultraviolet light-emitting diode is low, which seriously limits the recombination probability of holes and electrons in the active region of the deep ultraviolet light-emitting diode, thereby greatly restricting the luminous efficiency of the deep ultraviolet light-emitting diode, the present invention provides a deep ultraviolet light-emitting diode with a diamond nano-pillar structure and a preparation method thereof. The p-type region of the deep ultraviolet light-emitting diode includes a plurality of diamond nano-pillars with hydrogen terminals formed on part of the surface, the hole injection efficiency is improved by using the side walls of the diamond nano-pillars, and the hole gas formed by the hydrogen terminal at one end of the diamond nano-pillars is used to improve the hole injection efficiency, effectively improve the recombination probability of holes and electrons in the active region, and finally greatly improve the luminous efficiency of the deep ultraviolet light-emitting diode, and has the advantages of simple structure, low complexity of device preparation and high reliability; in addition, the deep ultraviolet light-emitting diode with a diamond nano-pillar structure provided by the present invention is an inverted structure, based on the inverted structure, the heat dissipation performance of the device can be better exerted, which is conducive to extending the service life of the device and improving the performance of the device. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 is a schematic structural diagram of a deep ultraviolet light-emitting diode with a diamond nanorod structure provided by an embodiment of the present invention;

[0020] Figure 2 It is a flow chart of the preparation of a deep ultraviolet light-emitting diode with a diamond nanocolumn structure provided by an embodiment of the present invention.

[0021] Reference numerals:

[0022] 1: substrate layer; 2: nucleation layer; 3: n-type GaN layer; 4: n-type active region; 5: electron blocking layer; 6: p-type region; 7: N-type electrode; 8: P-type electrode; 9: substrate. DETAILED DESCRIPTION

[0023] The present invention is further described in detail below with reference to specific embodiments, but the embodiments of the present invention are not limited thereto.

[0024] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine different embodiments or examples described in this specification.

[0025] Now, in conjunction with the accompanying drawings, the deep ultraviolet light emitting diode with a diamond nanorod structure and the preparation method thereof proposed in the present invention are described in detail. Figure 1 FIG. 1 is a schematic diagram of the structure of a deep ultraviolet light-emitting diode with a diamond nanorod structure provided by an embodiment of the present invention. Figure 1 As shown, the structure of the deep ultraviolet light-emitting diode includes: a substrate layer 1, a nucleation layer 2, an n-type GaN layer 3, an n-type active region 4, an electron blocking layer 5 and a p-type region 6 stacked in sequence from top to bottom; the p-type region 6 includes a plurality of spaced diamond nanocolumns, and a hydrogen terminal is formed on at least part of the surface of each diamond nanocolumn; an N-type electrode 7 is also arranged on the side of the n-type GaN layer 3 where the n-type active region 4 is arranged, and the N-type electrode 7 is spaced from the n-type active region 4; a P-type electrode 8 is also arranged on part of the surface of the p-type region 6 away from the electron blocking layer 5; and a substrate 9 is arranged on the lower surfaces of the N-type electrode 7 and the P-type electrode 8.

[0026] Here, the deep ultraviolet light-emitting diode with a diamond nanocolumn structure is in an inverted structure. Based on the inverted structure, the heat dissipation performance of the device can be better exerted, which is conducive to extending the service life of the device and improving the working performance of the device. The widths of the substrate layer 1, the nucleation layer 2, and the n-type GaN layer 3 are the same, the widths of the n-type active region 4, the electron blocking layer 5, and the p-type region 6 are the same, and the width of the n-type GaN layer 3 is greater than the width of the n-type active region 4.

[0027] Specifically, the material of the substrate layer 1 includes a patterned sapphire substrate, and the width of the substrate layer 1 ranges from 500 μm to 600 μm, preferably 500 μm. Also, the material of the nucleation layer 2 includes GaN, and the thickness of the nucleation layer 2 ranges from 20 nm to 40 nm, preferably 30 nm. By preparing the nucleation layer 2 on the substrate layer 1, lattice mismatch and subsequent growth defects can be reduced.

[0028] Here, the n-type GaN layer 3 acts as an electron injection layer, and its thickness is generally thicker than that of the p-type GaN. The thickness of the n-type GaN layer 3 is 2 μm to 4 μm, preferably 2.5 μm, and the doping concentration is 1×10 16 cm -3 ~1×10 19 cm -3 .

[0029] Here, the n-type active region 4 includes a plurality of Al x Ga 1-x N layer and multiple Al y Ga 1-y The N layer is grown alternately, and the doping concentration is 1×10 16 cm -3 ~1×10 19 cm -3 , each Al x Ga 1-x The thickness of the N layer ranges from 4nm to 7nm. y Ga 1-y The thickness of the N layer ranges from 6 nm to 12 nm, the width of the n-type active region 4 ranges from 300 μm to 400 μm, preferably 350 μm, wherein the value of x ranges from 0 to 0.6, and the value of y ranges from 0.4 to 0.8.

[0030] In one possible implementation, the number of alternations is 5, and the first Al x Ga 1-x N layer, in the first Al x Ga 1-x The first Al y Ga 1-y N layer, then in the first Al y Ga 1-y A second Al x Ga 1-x N layer, in the second Al x Ga 1-x The second Al layer is superimposed on the N layer y Ga 1-y N layers are repeatedly stacked alternately until the fifth Al y Ga1-y N layer, to obtain an active region 5. Exemplarily, the n-type active region 4 is composed of 5 Al 0.55 Ga 0.45 N layer and 5 Al 0.65 Ga 0.35 N layers are grown alternately, each Al 0.55 Ga 0.45 The thickness of the N layer is 4nm, and each Al 0.65 Ga 0.35 The thickness of the N layer is 8 nm.

[0031] Here, the material of the electron blocking layer 5 is Al z Ga 1-z N, doping concentration is 1×10 16 cm -3 ~1×10 19 cm -3 , the thickness ranges from 15 nm to 25 nm, preferably 15 nm, wherein z ranges from 0.3 to 0.75. For example, the electron blocking layer 5 is made of Al 0.7 Ga 0.3 Prepared by N.

[0032] Here, the diameter of each diamond nanorod in the p-type region 6 is in the range of 150nm to 250nm, the height is in the range of 0.3μm to 1.5μm, and the spacing between two adjacent diamond nanorods is in the range of 30nm to 80nm, preferably 50nm. In addition, the hydrogen terminal refers to the end face formed after hydrogen ion treatment, which can be distributed on a part of the outer surface of the diamond nanorod or the entire outer surface.

[0033] Here, the width of the N-type electrode 7 is in the range of 100 μm to 150 μm, and the width of the P-type electrode 8 is in the range of 100 μm to 150 μm.

[0034] Corresponds to Figure 1 The invention discloses a deep ultraviolet light emitting diode with a diamond nanocolumn structure, and also provides a method for preparing a deep ultraviolet light emitting diode with a diamond nanocolumn structure. Figure 2 FIG. 1 is a flow chart of the preparation of a deep ultraviolet light-emitting diode having a diamond nanorod structure provided by an embodiment of the present invention. Figure 2 , the preparation method of the deep ultraviolet light-emitting diode with diamond nanorod structure proposed by the present invention is described in detail. It should be noted that, Figure 2 The figure includes 8 small figures, and the direction of the arrows represents the preparation order of the device. In addition, for the sake of simplicity and to facilitate clear identification of the newly added parts, the components that have appeared in the previous small figures in each small figure are not numbered, and only the newly added components in the current small figure are numbered.

[0035] Specifically, the preparation method includes S110-S170. Specifically:

[0036] S110 , preparing a nucleation layer 2 on the pretreated substrate layer 1 .

[0037] Here, the substrate layer 1 is cleaned to remove dust and other impurities on the surface, and then placed in a metal organic chemical vapor deposition (MOCVD) chamber, and the reaction chamber is evacuated to a vacuum degree of 3×10 -2 Torr; hydrogen is introduced into the reaction chamber, and when the pressure of the reaction chamber reaches about 50 Torr, the substrate layer 1 is heated to 900°C for 6 minutes to complete the pretreatment of the substrate layer 1; the pretreated substrate layer 1 is placed in a reaction chamber at 1100°C, and ammonia with a flow rate of 3200sccm is introduced for 5 minutes to complete nitridation; then, a MOCVD process is used to grow a nucleation layer 2 on the substrate layer 1 after nitridation at 1000°C, ammonia with a flow rate of 2600sccm and a gallium source with a flow rate of 130sccm in the reaction chamber environment, as shown in FIG. Figure 2 As shown in (1) in .

[0038] S120 , growing an n-type GaN layer 3 on the nucleation layer 2 .

[0039] Here, the MOCVD process is used to control the temperature of the reaction chamber to 1000°C, and at the same time, ammonia gas with a flow rate of 2600sccm, gallium source gas with a flow rate of 130sccm, and silicon source gas with a flow rate of 20sccm are introduced. When the pressure is maintained at 22Torr, a 2.5μm thick and doping concentration of 2×10 18 cm -3 The n-type GaN layer 3, such as Figure 2 As shown in (2) in .

[0040] S130 , preparing an n-type active region 4 on the n-type GaN layer 3 .

[0041] Here, on one side of the upper surface of the n-type GaN layer 3, five Al layers are alternately grown by MOCVD process at a reaction chamber temperature of 900°C and a pressure of 22 Torr. 0.55 Ga 0.45 N layer and Al 0.65 Ga 0.35 N layer, each Al 0.55 Ga 0.45 The thickness of the N layer is 4nm, and each Al 0.65 Ga 0.35 The thickness of the N layer is 8 nm, and an n-type active region 4 is obtained, such as Figure 2 Specifically, when growing Al 0.55 Ga 0.45N layer and Al 0.65 Ga 0.35 During the N layer growth process, the nitrogen source flow rate was controlled to be maintained at 1000 sccm. 0.55 Ga 0.45 When the N layer is grown, the gallium source flow rate is controlled to 60sccm and the aluminum source flow rate is 400sccm. 0.65 Ga 0.35 In the N layer, the gallium source flow rate is controlled to be 40 sccm and the aluminum source flow rate is controlled to be 600 sccm.

[0042] S140 , preparing an electron blocking layer 5 on the n-type active region 4 .

[0043] Here, the MOCVD process is used. When the reaction chamber temperature is 900°C, a nitrogen source with a flow rate of 1000sccm, a gallium source with a flow rate of 35sccm, and an aluminum source with a flow rate of 700sccm are introduced into the reaction chamber to grow a 15nm thick Al layer. 0.7 Ga 0.3 N layer, an electron blocking layer 5 is obtained, such as Figure 2 As shown in (4) in .

[0044] S150, preparing a p-type region 6 on the electron blocking layer 5, wherein the p-type region 6 comprises a plurality of diamond nanocolumns arranged at intervals, and a hydrogen terminal is formed on at least a portion of the surface of each diamond nanocolumn.

[0045] Here, in the MPCVD chamber, the microwave power is set to 1800W, the hydrogen flow rate is 400sccm, the methane concentration is 5%, the nitrogen concentration is 0.02sccm, the working pressure is 145Torr, and the reaction chamber temperature is 850°C. A diamond layer is grown on the electron blocking layer 5, as shown in FIG. Figure 2 As shown in (5) in the figure; the grown diamond is pre-baked to remove moisture on the surface to enhance the adhesion of the subsequent photoresist to the surface of the diamond layer; after the pre-baking is completed, the photoresist is dripped onto the surface of the diamond layer placed in the coating machine, and the photoresist is rotated at high speed to make the photoresist flow to the edge under the action of centrifugal force to form a uniform film, and then it is soft-baked; after the soft-baking is completed, the solvent in the photoresist is removed to reduce the risk of dust contamination and improve the adhesion of the photoresist to the diamond layer; then, it is placed in a photolithography machine to photolithograph the required pattern, and baked again to further solidify the photoresist and complete the photochemical reaction; the photoresist is removed using a developer, so that the pattern on the mask is copied to the photoresist film to generate a plurality of diamond nanocolumns, and finally one end of the photolithographic diamond nanocolumn is treated with hydrogen ions to form a hydrogen terminal, and a plurality of diamond nanocolumns containing hydrogen terminals are obtained, such as Figure 2 As shown in (6) in .

[0046] Here, the hole injection efficiency can be improved based on the sidewalls of the diamond nanorods containing multiple hydrogen terminals, and the hole concentration can be increased based on the two-dimensional hole gas formed by the hydrogen terminals.

[0047] S160, sputtering an N-type electrode 7 on the n-type GaN layer 3, and sputtering a P-type electrode 8 on a portion of the surface of the p-type region 6 away from the electron blocking layer 5, the bottom of the N-type electrode 7 is flush with the bottom of the P-type electrode 8.

[0048] Here, a metal sputtering method is used to sputter an N-type electrode 7 on the n-type GaN layer 3, and a P-type electrode 8 on the p-type region 6, as shown in FIG. Figure 2 As shown in (7) in .

[0049] S170, welding the side of the N-type electrode 7 away from the n-type GaN layer 3 and the side of the P-type electrode 8 away from the p-type region 6 on the substrate 9 to obtain a deep ultraviolet light-emitting diode with a diamond nanorod structure, such as Figure 2 As shown in (8) in .

[0050] Here, solder is used to directly connect the chip electrode to the substrate pad, thereby completing the preparation of a deep ultraviolet light-emitting diode with a diamond nanocolumn structure having a flip-chip structure.

[0051] Aiming at the problem that the hole concentration in the existing deep ultraviolet light-emitting diode is low, which seriously limits the recombination probability of holes and electrons in the active region of the deep ultraviolet light-emitting diode, thereby greatly restricting the luminous efficiency of the deep ultraviolet light-emitting diode, the present invention provides a deep ultraviolet light-emitting diode with a diamond nano-pillar structure and a preparation method thereof. The p-type region of the deep ultraviolet light-emitting diode includes a plurality of diamond nano-pillars with hydrogen terminals formed on part of the surface, the hole injection efficiency is improved by using the side walls of the diamond nano-pillars, and the hole gas formed by the hydrogen terminal at one end of the diamond nano-pillars is used to improve the hole injection efficiency, effectively improve the recombination probability of holes and electrons in the active region, and finally greatly improve the luminous efficiency of the deep ultraviolet light-emitting diode, and has the advantages of simple structure, low complexity of device preparation and high reliability; in addition, the deep ultraviolet light-emitting diode with a diamond nano-pillar structure provided by the present invention is an inverted structure, based on the inverted structure, the heat dissipation performance of the device can be better exerted, which is conducive to extending the service life of the device and improving the performance of the device.

[0052] The above contents are further detailed descriptions of the present invention in combination with specific preferred embodiments, and it cannot be determined that the specific implementation of the present invention is limited to these descriptions. For ordinary technicians in the technical field to which the present invention belongs, several simple deductions or substitutions can be made without departing from the concept of the present invention, which should be regarded as falling within the protection scope of the present invention.

Claims

1. A deep ultraviolet light-emitting diode with a diamond nanorod structure, characterized in that: include: A substrate layer (1), a nucleation layer (2), an n-type GaN layer (3), an n-type active region (4), an electron blocking layer (5) and a p-type region (6) stacked in sequence; the p-type region (6) comprises a plurality of diamond nanocolumns arranged at intervals, and a hydrogen terminal is formed on at least part of the surface of each diamond nanocolumn; An N-type electrode (7) is also provided on the side of the n-type GaN layer (3) where the n-type active region (4) is provided, and the N-type electrode (7) is spaced apart from the n-type active region (4); A P-type electrode (8) is also provided on a portion of the surface of the p-type region (6) away from the electron blocking layer (5); A substrate (9) is provided on a side of the N-type electrode (7) away from the n-type GaN layer (3) and a side of the P-type electrode (8) away from the p-type region (6).

2. The deep ultraviolet light-emitting diode with a diamond nanorod structure according to claim 1, characterized in that: The diameter of each diamond nanocolumn ranges from 150nm to 250nm, the height ranges from 0.3μm to 1.5μm, and the spacing distance between two adjacent diamond nanocolumns ranges from 30nm to 80nm.

3. The deep ultraviolet light emitting diode with a diamond nanorod structure according to claim 1, characterized in that: The substrate layer (1), the nucleation layer (2), and the n-type GaN layer (3) have the same width, the n-type active region (4), the electron blocking layer (5), and the p-type region (6) have the same width, and the n-type GaN layer (3) has a width greater than that of the n-type active region (4).

4. The deep ultraviolet light emitting diode with a diamond nanorod structure according to claim 1, characterized in that: The n-type active region (4) comprises a plurality of Al x Ga 1-x N layer and multiple Al y Ga 1-y N layers are alternated, with a doping concentration of 1×10 16 cm -3 ~1×10 19 cm -3 , each Al x Ga 1-x The thickness of the N layer ranges from 4nm to 7nm. y Ga 1-y The thickness of the N layer ranges from 6 nm to 12 nm, the width of the n-type active region (4) ranges from 300 μm to 400 μm, wherein the value of x ranges from 0 to 0.6, and the value of y ranges from 0.4 to 0.

8.

5. The deep ultraviolet light emitting diode with a diamond nanorod structure according to claim 1, characterized in that: The material of the substrate layer (1) comprises a patterned sapphire substrate, and the width of the substrate layer (1) ranges from 500 μm to 600 μm.

6. The deep ultraviolet light emitting diode with a diamond nanorod structure according to claim 1, characterized in that: The material of the nucleation layer (2) includes GaN, and the thickness of the nucleation layer (2) ranges from 20 nm to 40 nm.

7. The deep ultraviolet light emitting diode with a diamond nanorod structure according to claim 1, characterized in that: The thickness of the n-type GaN layer (3) is 2 μm to 4 μm, and the doping concentration is 1×10 16 cm -3 ~1×10 19 cm -3 .

8. The deep ultraviolet light emitting diode with a diamond nanorod structure according to claim 1, characterized in that: The material of the electron blocking layer (5) is Al z Ga 1-z N, doping concentration is 1×10 16 cm -3 ~1×10 19 cm -3 , the thickness ranges from 15nm to 25nm, where the value range of z is 0.3 to 0.

75.

9. The deep ultraviolet light emitting diode with a diamond nanorod structure according to claim 1, characterized in that: The width of the N-type electrode (7) is in the range of 100 μm to 150 μm, and the width of the P-type electrode (8) is in the range of 100 μm to 150 μm.

10. A method for preparing a deep ultraviolet light-emitting diode having a diamond nanorod structure, characterized in that: The preparation method is used to prepare a deep ultraviolet light-emitting diode having a diamond nanorod structure as described in any one of claims 1 to 9; The preparation method comprises: Preparing a nucleation layer (2) on the pretreated substrate layer (1); Growing an n-type GaN layer (3) on the nucleation layer (2); Preparing an n-type active region (4) on the n-type GaN layer (3); Preparing an electron blocking layer (5) on the n-type active region (4); A p-type region (6) is prepared on the electron blocking layer (5), wherein the p-type region (6) comprises a plurality of diamond nanocolumns arranged at intervals, and a hydrogen terminal is formed on at least part of the surface of each diamond nanocolumn; sputtering an N-type electrode (7) on the n-type GaN layer (3), and sputtering a P-type electrode (8) on a portion of the surface of the p-type region (6) away from the electron blocking layer (5); The side of the N-type electrode (7) away from the n-type GaN layer (3) and the side of the P-type electrode (8) away from the p-type region (6) are welded on a substrate (9) to obtain the deep ultraviolet light-emitting diode with the diamond nanocolumn structure.

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