Semiconductor sample annealing method and device

Abstract

The invention provides a semiconductor sample annealing method and device, and relates to the technical field of semiconductors, and the method comprises the steps: heating a chamber to a first preset temperature, and placing a semiconductor sample in the chamber, the semiconductor sample including a sample doped with a dopant; and after heat preservation for a preset time, cooling the semiconductor sample by using a first inert gas so as to reduce the annealing time of the semiconductor sample. The inert gas is adopted to cool the semiconductor sample, so that the heating time of the sample in the annealing process can be obviously reduced, and the rapid annealing of the semiconductor sample is realized.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a method and device for annealing a semiconductor sample. Background Art

[0002] Annealing technology is a commonly used technology in semiconductor processing. It uses a heating device to quickly heat up and keep the sample warm to rearrange the atoms inside the material, remove defects or impurities, repair the material lattice structure and restore the lattice order. It can be used to activate dopants in the material, densify or crystallize the deposited amorphous film, repair epitaxial defects or ion implantation damage, improve the material lattice quality and regulate the electrical and optical properties of the material.

[0003] The currently used annealing process usually only achieves rapid sample temperature rise during the heating phase. However, due to the large heat capacity of the chamber and other reasons, the total heating time of the sample during the annealing process is relatively long, which can cause the diffusion and rearrangement of dopants in the material and destroy the doping design in the material, causing the performance of the prepared semiconductor product to deviate from the expected effect. Summary of the invention

[0004] In view of the above problems, embodiments of the present invention provide a semiconductor sample annealing method and device.

[0005] One aspect of the present invention provides a semiconductor sample annealing method, comprising: heating a chamber to a first preset temperature, wherein a semiconductor sample is placed in the chamber, and the semiconductor sample includes a sample doped with a dopant; after keeping the temperature at a preset time, using a first inert gas to cool the semiconductor sample to reduce the annealing time of the semiconductor sample.

[0006] According to an embodiment of the present invention, the semiconductor sample is a sample doped with a super solid solubility dopant; before using the first inert gas to cool the semiconductor sample, the method also includes: cooling the first inert gas so that the temperature of the first inert gas is lower than a second preset temperature.

[0007] According to an embodiment of the present invention, cooling the first inert gas includes: cooling the first inert gas using liquid nitrogen.

[0008] According to an embodiment of the present invention, liquid nitrogen is used to cool the first inert gas, including: injecting liquid nitrogen into a heat exchanger, the liquid nitrogen is connected to the air through an evaporation port; the first inert gas is introduced into a heat exchange pipe of the heat exchanger, the heat exchange pipe is immersed in liquid nitrogen and connected to the chamber.

[0009] According to an embodiment of the present invention, heating the chamber to a first preset temperature includes: introducing a second inert gas into the chamber and simultaneously exhausting the second inert gas from the chamber, wherein the flow rate of the second inert gas introduced is the same as the flow rate of the second inert gas exhausted; and heating the chamber to raise the temperature of the chamber to the first preset temperature.

[0010] According to an embodiment of the present invention, before introducing the second inert gas into the chamber, the semiconductor sample annealing method further includes: evacuating the chamber to achieve a preset vacuum degree in the chamber.

[0011] According to an embodiment of the present invention, after the chamber is vacuumed, the semiconductor sample annealing method further includes: after introducing a second inert gas into the chamber, exhausting the second inert gas; after repeatedly introducing and exhausting the second inert gas a predetermined number of times, introducing a preset amount of the second inert gas into the chamber again.

[0012] According to an embodiment of the present invention, a first inert gas is used to cool a semiconductor sample, including: introducing the first inert gas into a chamber, and simultaneously exhausting the first inert gas from the chamber until the temperature in the chamber is lower than a third preset temperature, and the flow rate of the first inert gas introduced is the same as the flow rate of the first inert gas exhausted.

[0013] According to an embodiment of the present invention, heating the chamber to a first preset temperature includes: heating the chamber using a plurality of heating devices, wherein the plurality of heating devices are at least disposed on two opposite sides of the semiconductor sample along the epitaxial direction.

[0014] Another aspect of the present invention provides a semiconductor sample annealing device, comprising: a chamber for placing a semiconductor sample, the semiconductor sample including a sample doped with a dopant; a heating device, disposed in the chamber, for heating the chamber to raise the temperature of the chamber to a first preset temperature; a heat exchange pipe, connected to the chamber, for introducing a first inert gas into the chamber, the first inert gas being used to cool the semiconductor sample to reduce the annealing time of the semiconductor sample.

[0015] The method of the present invention can significantly reduce the heating time of the sample in the annealing process by using an inert gas to cool the semiconductor sample, thereby achieving rapid annealing of the semiconductor sample. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The above contents and other objects, features and advantages of the present invention will become more apparent through the following description of the embodiments of the present invention with reference to the accompanying drawings, in which:

[0017] Figure 1 A flowchart of a semiconductor sample annealing method according to an embodiment of the present invention is schematically shown;

[0018] Figure 2 A schematic diagram of a semiconductor sample annealing device according to an embodiment of the present invention is shown;

[0019] Figure 3 A diagram schematically shows a heating process of a semiconductor sample annealing method according to an embodiment of the present invention;

[0020] Figure 4 The temperature reduction process diagram of the semiconductor sample annealing method according to an embodiment of the present invention is schematically shown.

[0021] [Description of Reference Numerals]

[0022] 1- inert gas source; 2- first control valve; 3- second control valve; 4- heat exchanger; 41- filling port; 42- evaporation port; 43- heat exchange pipeline; 44- cooling liquid; 5- pressure and temperature detection device; 6- chamber; 61- semiconductor sample; 62- heating device; 7- third control valve; 8- vacuum device. DETAILED DESCRIPTION

[0023] In order to make the objectives, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0024] It should be noted that in the drawings or descriptions, similar or identical parts use the same figure numbers. The technical features in the various embodiments exemplified in the specification can be freely combined to form new solutions without conflict, and in the drawings, the shape or thickness of the embodiments can be expanded and simplified or conveniently indicated. Furthermore, the elements or implementations not shown or described in the drawings are in a form known to ordinary technicians in the relevant technical field. In addition, although demonstrations of parameters containing specific values ​​may be provided herein, it should be understood that the parameters do not need to be exactly equal to the corresponding values, but can be approximated to the corresponding values ​​within an acceptable error tolerance or design constraint.

[0025] Unless there are technical obstacles or contradictions, the above-mentioned various embodiments of the present invention can be freely combined to form other embodiments, and these other embodiments are all within the protection scope of the present invention.

[0026] Although the present invention is described in conjunction with the accompanying drawings, the embodiments disclosed in the drawings are intended to exemplify the preferred embodiments of the present invention and should not be construed as limiting the present invention. The size ratios in the drawings are merely illustrative and should not be construed as limiting the present invention.

[0027] Although some embodiments of the present general inventive concept have been shown and described, it will be appreciated by those skilled in the art that changes may be made to these embodiments without departing from the principles and spirit of the present general disclosed concept.

[0028] Figure 1 The flowchart of the semiconductor sample annealing method according to an embodiment of the present invention is schematically shown.

[0029] According to an embodiment of the present invention, Figure 1 As shown, the present invention provides a semiconductor sample annealing method, for example, including operations S101 and S102.

[0030] In operation S101 , the temperature of a chamber is raised to a first preset temperature, a semiconductor sample is placed in the chamber, and the semiconductor sample includes a sample doped with a dopant.

[0031] In operation S102 , after being kept at a preset temperature for a period of time, the semiconductor sample is cooled by using a first inert gas to reduce the annealing time of the semiconductor sample.

[0032] In some embodiments, the first preset temperature and the preset time can be selected according to actual needs of the semiconductor sample 61 heating process.

[0033] For example, when heating a TiNxOy / TiS2 material made of TiN, the first preset temperature may be set to 900° C. and the holding time may be 30 seconds.

[0034] For another example, when heating the interface of the silicon germanium material, the first preset temperature may be set to 1270° C., and the holding time may be 30 seconds.

[0035] For another example, when the temperature of the material doped with the super solid solubility dopant is increased, the first preset temperature may be set to 350° C., and the holding time may be 60 seconds.

[0036] The semiconductor sample 61 may be, for example, a heat-time-sensitive material doped with a dopant. A heat-time-sensitive material is a material that is susceptible to atomic diffusion due to a long heating time caused by a low cooling rate after annealing during a thermal annealing process. The shape of the semiconductor sample 61 may be, for example, a square, a polygon, or other shapes, and more specifically, may be a wafer.

[0037] It can be understood that the shape of the semiconductor sample 61 in the present invention can be selected according to the specific application scenario.

[0038] The first inert gas may be, for example, helium.

[0039] By using inert gas to cool down semiconductor samples, the heating time of the samples during the annealing process can be significantly reduced, thereby achieving rapid annealing of semiconductor samples.

[0040] Figure 2 The structure of a semiconductor sample annealing device according to an embodiment of the present invention is schematically shown.

[0041] According to an embodiment of the present invention, the semiconductor sample is a sample doped with a supersolubility dopant. Before cooling the semiconductor sample with the first inert gas, the semiconductor sample annealing method further includes: cooling the first inert gas so that the temperature of the first inert gas is less than a second preset temperature.

[0042] In some embodiments, Figure 2 As shown, when cooling the semiconductor sample 61 doped with a supersolubility dopant, the sample doped with the supersolubility dopant is more sensitive to the heating time scale, that is, it is more likely to undergo atomic diffusion reactions during high temperatures. Therefore, before cooling the semiconductor sample 61 with the first inert gas, for example, the second control valve 3 can be opened to transfer the inert gas in the inert gas source 1 to the heat exchanger 4, and the inert gas can be cooled using the coolant 44 in the heat exchanger 4. The inert gas source can be, for example, a helium bottle with a pressure reducing valve or a centralized gas supply facility.

[0043] It can be understood that the second preset temperature can be selected according to the actual needs of the cooling process. The lower the second preset temperature is, the better the cooling effect on the semiconductor sample will be.

[0044] By cooling the first inert gas before cooling the semiconductor sample doped with the super solid solubility dopant, the cooling rate of the semiconductor sample doped with the super solid solubility dopant can be effectively improved.

[0045] According to an embodiment of the present invention, cooling the first inert gas includes: cooling the first inert gas using liquid nitrogen.

[0046] In some embodiments, Figure 2 As shown, the coolant 44 may be, for example, liquid nitrogen, the inert gas source 1 may be, for example, a helium gas source, and the first inert gas may correspondingly be, for example, helium.

[0047] For example, liquid nitrogen can be used to cool the interior of the heat exchanger 4 and maintain the temperature at about 77 K. Then, the helium is transmitted through the cooled heat exchange pipe 43, and the helium is continuously cooled during the transmission process. Since the liquefaction temperature of the helium is lower than the temperature of the liquid nitrogen, the helium can be kept in a low-temperature gas state.

[0048] By using liquid nitrogen as the coolant, the temperature of the first inert gas can be quickly reduced, thereby significantly improving the cooling rate of the semiconductor sample.

[0049] According to an embodiment of the present invention, the first inert gas is cooled by using liquid nitrogen, including: injecting liquid nitrogen into a heat exchanger, the liquid nitrogen is connected to the air through an evaporation port, and the first inert gas is introduced into a heat exchange pipe of the heat exchanger, the heat exchange pipe is immersed in liquid nitrogen and connected to the chamber.

[0050] In some embodiments, Figure 2 As shown, for example, liquid nitrogen can be injected into the heat exchanger 4 from the injection port 41. The heat exchanger 4 can be, for example, a low-temperature resistant heat exchanger with a certain volume. After the liquid nitrogen enters the heat exchanger 4, it is connected to the atmosphere through the evaporation port 42, so the liquid nitrogen will boil under normal pressure, and the generated gas will be discharged from the evaporation port 42 and absorb a large amount of heat to rapidly reduce the temperature in the heat exchanger 4.

[0051] When the temperature in the heat exchanger 4 is stable, the liquid nitrogen no longer boils violently and maintains the system temperature at 77K. When the temperature in the heat exchanger 4 is stable, for example, the second control valve 3 can be opened to transmit the first inert gas to the heat exchange pipe 43 of the heat exchanger 4 through the inert gas source 1, and the heat exchange pipe 43 is immersed in normal pressure liquid nitrogen. At this time, the temperature of the normal pressure liquid nitrogen is, for example, 77K, which can quickly cool the first inert gas. The cooled first inert gas is then transmitted to the chamber 6 through the heat exchange pipe 43, wherein the heat exchange pipe 43 can be, for example, a tortuous coil or a plate pipe, which serves to allow the inert gas to flow slowly and fully cool down to the liquid nitrogen temperature within a long flow time. In the process of cooling the first inert gas by the heat exchanger 4, the temperature of the liquid nitrogen will increase. The liquid nitrogen with increased temperature can continue to volatilize nitrogen and absorb heat because it is connected to the atmosphere through the evaporation port 42, and the system temperature is maintained at about 77K.

[0052] For example, the pressure and temperature detection device 5 may be used to detect the pressure and temperature of the first inert gas after cooling while the first inert gas after cooling is transferred to the chamber 6. The pressure and temperature detection device 5 may be, for example, a low-temperature resistant gas pressure gauge and a low-temperature resistant thermocouple.

[0053] For example, an outer wall of the transmission pipeline outside the heat exchanger 4 and an outer wall of the heat exchanger 4 may be coated with an insulating foam layer to reduce the temperature rise caused by heat transfer between the low-temperature inert gas in the pipeline and the air outside the pipeline due to the atmospheric temperature difference, and to reduce the liquid nitrogen consumption caused by heat transfer between the heat exchanger 4 and the air.

[0054] By setting the evaporation port, the temperature of the liquid nitrogen can be continuously maintained at about 77K, and the continuous and effective cooling of the first inert gas can be achieved.

[0055] Figure 3 The heating process diagram of the semiconductor sample annealing method according to an embodiment of the present invention is schematically shown.

[0056] According to an embodiment of the present invention, raising the temperature of the chamber to the first preset temperature includes: introducing a second inert gas into the chamber and simultaneously exhausting the second inert gas from the chamber, wherein the flow rate of the second inert gas introduced is the same as the flow rate of the second inert gas exhausted. The chamber is heated to raise the temperature of the chamber to the first preset temperature.

[0057] In some embodiments, Figure 3 As shown, for example, the first control valve 2 can be opened and the second control valve 3 can be closed by a computer program, and the second inert gas can be introduced into the chamber 6 from the top of the chamber 6 through the inert gas source 1. At the same time, the third control valve 7 is opened, and the second inert gas in the chamber 6 is extracted from the bottom of the chamber 6 by the vacuum device 8, and the openings of the first control valve and the third control valve are adjusted so that the inflow and outflow of the second inert gas in the chamber 6 are balanced, and the gas pressure inside the chamber no longer changes. The gas flow path is as follows: Figure 3 The vacuum device 8, the first control valve 2 and the third control valve 7 cooperate with each other to control the chamber 6 to maintain a certain inert gas atmosphere during the entire heating process. An inert gas convection environment is formed to promote the flow of the inert atmosphere and take away volatile substances that may exist during the heating process.

[0058] Through the coordinated control of the vacuum pumping device, the first control valve and the third control valve, an inert gas convection environment is formed in the chamber to promote the flow of the inert atmosphere and take away volatile substances that may exist in the heating process.

[0059] According to an embodiment of the present invention, before introducing the second inert gas into the chamber, the semiconductor sample annealing method further includes: evacuating the chamber to achieve a preset vacuum degree in the chamber.

[0060] In some embodiments, Figure 2 As shown, for example, the first control valve 2 and the second control valve 3 can be closed first, and the third control valve 7 can be opened to connect the chamber 6 with the vacuum pumping device 8 and pump out the air in the chamber 6 until a preset vacuum degree is reached to prevent the semiconductor sample 61 from being oxidized during the heating process. The preset vacuum degree can, for example, represent the vacuum degree that can make the chamber 6 reach a negative pressure state. The vacuum pumping device 8 can, for example, be a mechanical vacuum pump.

[0061] By evacuating the chamber before introducing the second inert gas into the chamber, oxidation of the semiconductor sample during the heating process can be effectively avoided, thereby improving the performance of the prepared semiconductor sample.

[0062] According to an embodiment of the present invention, after the chamber is evacuated, the semiconductor sample annealing method further includes: after introducing a second inert gas into the chamber, exhausting the second inert gas. After repeatedly introducing and exhausting the second inert gas a predetermined number of times, a preset amount of the second inert gas is introduced into the chamber again.

[0063] In some embodiments, Figure 2 As shown, for example, when the chamber 6 is evacuated to a negative pressure, the third control valve 7 can be closed and the first control valve 2 can be opened to fill the chamber 6 with inert gas at room temperature. Then, the first control valve 2 is closed and the third control valve 7 is opened to evacuate the gas in the chamber 6 to take away any residual oxygen. The evacuation and filling operations are repeated three times to completely fill the chamber 6 with pure inert gas.

[0064] By introducing and exhausting the second inert gas multiple times, the residual oxygen can be further extracted, and the chamber is filled with pure inert gas, so as to improve the performance of the prepared semiconductor sample.

[0065] Figure 4 The temperature reduction process diagram of the semiconductor sample annealing method according to an embodiment of the present invention is schematically shown.

[0066] According to an embodiment of the present invention, a first inert gas is used to cool a semiconductor sample, including: introducing the first inert gas into a chamber, and simultaneously exhausting the first inert gas from the chamber until the temperature in the chamber is lower than a third preset temperature, and the flow rate of the first inert gas introduced is the same as the flow rate of the first inert gas exhausted.

[0067] In some embodiments, Figure 4 As shown, for example, the first control valve 2 can be closed first, and the second control valve 3 and the third control valve 7 can be opened to allow the first inert gas to flow through the longer path of the zigzag coil immersed in liquid nitrogen in the heat exchanger 4, and then flow into the chamber 6 after the temperature drops to the liquid nitrogen temperature, and the first inert gas is pumped out of the chamber 6 through the vacuum pumping device 8. The gas flow path is as follows Figure 4 For example, a computer system can be used to monitor the temperature in the chamber 6 in real time and record its cooling curve through a thermocouple set in the chamber 6. When the temperature in the chamber 6 is, for example, lower than 40°C, the annealing process is completed, all control valves can be closed and the semiconductor sample 61 can be taken out.

[0068] By introducing the first inert gas into the chamber and exhausting the first inert gas from the chamber at the same time, gas circulation in the chamber can be achieved, thereby improving the cooling rate of the semiconductor sample.

[0069] According to an embodiment of the present invention, heating the chamber to a first preset temperature includes: heating the chamber using a plurality of heating devices, wherein the plurality of heating devices are at least disposed on two opposite sides of the semiconductor sample along the epitaxial direction.

[0070] In some embodiments, Figure 2 As shown, for example, a halogen heating lamp can be used as a heating device 62 to heat the chamber 6. The heating inside the cavity 6 is achieved by applying a certain current to the halogen heating lamp. The halogen heating lamp is arranged on the upper and lower sides of the semiconductor sample 61, and the semiconductor sample 61 can be quickly heated. For example, the cavity 6 can be equipped with a sample table to carry the semiconductor sample 61, and a high-temperature thermocouple can be arranged to measure the temperature in the chamber 6 in real time, and the current flowing through the halogen heating lamp is adjusted by feedback through a computer control system, so that the sample reaches the set temperature along the set heating curve and is kept warm for a set time to complete the heating process.

[0071] For example, during the heating process, the chamber 6 may be connected to a barometer to monitor the internal air pressure of the chamber 6 .

[0072] After the temperature rise process is completed, the constant temperature program of the computer feedback regulation should be terminated to avoid triggering system feedback heating during the temperature drop stage. In order to maintain the stability of the temperature feedback regulation in the chamber during the temperature rise period, the temperature of the inert gas introduced into the chamber during the sample heating and insulation process can be, for example, room temperature.

[0073] By arranging a plurality of heating devices on two opposite sides of the semiconductor sample along the epitaxial direction, rapid heating treatment of the semiconductor sample can be achieved and the heating rate can be increased.

[0074] Another aspect of the present invention provides a semiconductor sample annealing device, such as Figure 2 As shown, for example, it may include: a chamber 6 for placing a semiconductor sample 61, wherein the semiconductor sample 61 includes a sample doped with a dopant. A heating device 62 is disposed in the chamber 6 and is used to heat the chamber 6 so that the chamber 6 is heated to a first preset temperature. A heat exchange pipe 43 is connected to the chamber 6 and is used to introduce a first inert gas into the chamber 6, wherein the first inert gas is used to cool the semiconductor sample 61 so as to reduce the annealing time of the semiconductor sample 61.

[0075] The unfinished details in the product example section are similar to those in the method example section. Please refer to the method example section and will not be repeated here.

[0076] It should be understood that the specific order or hierarchy of steps in the disclosed process is an example of an exemplary method. Based on design preferences, it should be understood that the specific order or hierarchy of steps in the process can be rearranged without departing from the scope of protection of the present invention. The attached method provides the elements of various steps in an exemplary order and is not intended to be limited to a specific order or hierarchy.

[0077] It should also be noted that the directional terms mentioned in the embodiments, such as "upper", "lower", "front", "back", "left", "right", etc., are only reference directions of the drawings and are not intended to limit the scope of protection of the present invention. Throughout the drawings, the same elements are represented by the same or similar reference numerals. Conventional structures or constructions will be omitted when they may cause confusion in the understanding of the present invention. In addition, the shapes, sizes, and positional relationships of the components in the drawings do not reflect the actual sizes, proportions, and actual positional relationships.

[0078] In the foregoing detailed description, various features are grouped together in a single embodiment to simplify the invention. This disclosure method should not be interpreted as reflecting such an intention.

[0079] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined. As for the term "comprising" used in the specification, the word is covered in a manner similar to the term "including".

[0080] The specific embodiments described above further illustrate the objectives, technical solutions and beneficial effects of the present invention in detail. It should be understood that the above description is only a specific embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A semiconductor sample annealing method, characterized in that: include: Raising the temperature of a chamber to a first preset temperature, wherein a semiconductor sample is placed in the chamber, and the semiconductor sample includes a sample doped with a dopant; After the semiconductor sample is kept at a preset temperature for a period of time, the first inert gas is used to cool the semiconductor sample to reduce the annealing time of the semiconductor sample.

2. The method according to claim 1, characterized in that The semiconductor sample is a sample doped with a super solid solubility dopant; Before cooling the semiconductor sample by using the first inert gas, the method further comprises: The first inert gas is cooled so that the temperature of the first inert gas is lower than a second preset temperature.

3. The method according to claim 2, characterized in that The step of cooling the first inert gas comprises: The first inert gas is cooled by liquid nitrogen.

4. The method according to claim 3, characterized in that The step of cooling the first inert gas by using liquid nitrogen comprises: Filling liquid nitrogen into the heat exchanger, wherein the liquid nitrogen is connected to the air through the evaporation port; The first inert gas is introduced into the heat exchange pipe of the heat exchanger, the heat exchange pipe is immersed in the liquid nitrogen and is connected with the chamber.

5. The method according to claim 1, characterized in that The step of heating the chamber to a first preset temperature comprises: Introducing a second inert gas into the chamber and simultaneously exhausting the second inert gas from the chamber, wherein the flow rate of the second inert gas introduced is the same as the flow rate of the second inert gas exhausted; The chamber is heated to raise the temperature of the chamber to the first preset temperature.

6. The method according to claim 5, characterized in that Before introducing the second inert gas into the chamber, the method further comprises: The chamber is evacuated to achieve a preset vacuum level in the chamber.

7. The method according to claim 6, characterized in that After evacuating the chamber, the method further comprises: After the second inert gas is introduced into the chamber, the second inert gas is exhausted; After repeatedly introducing and exhausting the second inert gas a predetermined number of times, a preset amount of the second inert gas is introduced into the chamber again.

8. The method according to claim 1, characterized in that The step of cooling the semiconductor sample by using a first inert gas comprises: The first inert gas is introduced into the chamber and simultaneously exhausted from the chamber until the temperature in the chamber is lower than a third preset temperature, and the flow rate of the first inert gas introduced is the same as the flow rate of the first inert gas exhausted.

9. The method according to claim 1, characterized in that: The step of heating the chamber to a first preset temperature comprises: The chamber is heated by using a plurality of heating devices, wherein the plurality of heating devices are at least arranged on two opposite sides of the semiconductor sample along the epitaxial direction.

10. A semiconductor sample annealing device, characterized in that: include: a chamber for placing a semiconductor sample, wherein the semiconductor sample includes a sample doped with a dopant; A heating device, disposed in the chamber, for heating the chamber to raise the temperature of the chamber to a first preset temperature; A heat exchange pipe is connected to the chamber and is used to introduce a first inert gas into the chamber. The first inert gas is used to cool the semiconductor sample to reduce the annealing time of the semiconductor sample.

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