Pressure control system and method for pressure sensor

Abstract

The invention relates to the technical field of data monitoring, in particular to a pressure control system and method for a pressure sensor, and the method specifically comprises the steps: building a digital twin model according to a target etching groove type, and carrying out the division of etching monitoring unit regions of the digital twin model; collecting etching state data of each etching groove on the semiconductor substrate to be etched in real time, and obtaining an etching efficiency index and an etching quality index of each groove depth layer; dynamically screening an etching monitoring unit area to be adjusted according to the etching efficiency index and the etching quality index, and controlling a pressure sensor to execute a pressure control strategy; according to the invention, the problems of insufficient etching precision and low etching efficiency in the prior art are solved.

Description

Technical Field

[0001] The invention relates to the technical field of data monitoring, and is a pressure control system and method for a pressure sensor. Background Art

[0002] In the semiconductor manufacturing process, as semiconductor process technology develops towards smaller size and higher integration, traditional etching control methods have been unable to meet the increasing precision requirements and quality standards. The existing etching methods lack a monitoring and feedback mechanism for real-time changes in the etching process, resulting in the shape and depth of the etched groove being difficult to achieve ideal accuracy. In addition, the etching process lacks real-time evaluation and optimization of the etching efficiency, resulting in long etching time and low production efficiency. During the etching process, the evaluation of etching quality mainly depends on the surface morphology analysis after etching, and it is impossible to monitor and adjust the etching parameters in real time during the etching process, resulting in unstable etching quality and difficulty in controlling the surface roughness within the ideal range, resulting in the performance of semiconductor devices cannot be guaranteed. Summary of the invention

[0003] The technical problem to be solved by the present invention is to solve the problems of insufficient etching precision and low etching efficiency in the prior art, and propose a pressure control system and method for a pressure sensor.

[0004] In order to achieve the above object, a technical solution of a pressure control method for a pressure sensor of the present invention comprises the following steps:

[0005] S1: Identify a target etching groove type in an etching task of a semiconductor substrate to be etched, establish a digital twin model according to the target etching groove type, and divide the digital twin model into etching monitoring unit areas;

[0006] S2: Open the fluoroplastic valve, control the etching gas to flow into the etching reaction chamber through the built-in pressure sensor of the fluoroplastic valve, and collect the etching state data of each etching groove on the semiconductor substrate to be etched in real time;

[0007] S3: extracting etching state data of each lateral etching monitoring unit area group on the same groove depth layer, and importing the etching state data of each lateral etching monitoring unit area group into the etching efficiency verification strategy to obtain the etching efficiency index of each groove depth layer;

[0008] S4: acquiring etching state data of each longitudinal etching monitoring unit area group in adjacent groove depth layers by electronic scanning equipment, and importing the etching state data of each longitudinal etching monitoring unit area group into the etching quality checking strategy to calculate the etching quality index of each adjacent groove depth layer;

[0009] S5: According to the etching efficiency index and the etching quality index, the etching monitoring unit area to be adjusted is dynamically screened, and the pressure sensor is controlled to execute the pressure control strategy.

[0010] Specifically, S1 includes the following steps:

[0011] S11: Identify a target etching groove type in an etching task of a semiconductor substrate to be etched, and establish a digital twin model according to the target etching groove type, wherein the target etching groove type includes: a V-shaped groove, a trapezoidal groove, a vertical groove, and a U-shaped groove;

[0012] S12: According to the target etching groove type, the digital twin model is divided into etching monitoring unit areas, as follows:

[0013] When the target etching groove type is a V-shaped groove, a trapezoidal groove, or a vertical groove, the groove depth of the target etching groove type is extracted, and the groove depth is evenly divided into a plurality of groove depth layers;

[0014] When the target etching groove type is a U-shaped groove, the groove arc of the U-shaped groove is extracted, the angle formed by the tangent of each point on the groove arc and the center line of the U-shaped groove is calculated, the angle baseline difference range is set, and the points on the groove arc are divided into multiple arc segments according to the angle baseline difference range, wherein the arc segments within the same angle baseline difference range constitute a groove depth layer;

[0015] S13: extracting the total circumference of the side wall of each groove depth layer in the groove at the same time, and evenly dividing the total circumference of the side wall into regions of equal length;

[0016] S14: In the digital twin model, multiple etching monitoring unit areas are obtained, where there are M n An etching monitoring unit area.

[0017] Specifically, in S2, the etching state data includes: actual etching angle data, actual etching time data and etching surface morphology data of each etching monitoring unit area.

[0018] Specifically, S3 includes the following specific steps:

[0019] S31: extracting etching state data of each lateral etching monitoring unit area group on the same groove depth layer;

[0020] Wherein, each lateral etching monitoring unit area group includes: the mth adjacent areas on the same groove depth layer n The mth n -1 etching monitoring unit area, there are I n A lateral etching monitoring unit area group, in The sequence of the lateral etching monitoring unit area group,

[0021] S32: importing the etching state data of each lateral etching monitoring unit area group into an etching efficiency checking strategy, wherein the etching efficiency checking strategy includes: an etching angle deviation checking sub-strategy and an etching time deviation checking sub-strategy;

[0022] The etching angle deviation checking sub-strategy is specifically as follows:

[0023]

[0024] s1 is the etching angle deviation coefficient;

[0025] Respectively represent the index as 2i n ,2i n The actual etching angle of the etching monitoring unit area of ​​-1;

[0026] For index i n The average value of the actual etching angle of the lateral etching monitoring unit area group;

[0027] For I n The average value of the actual etching angle of the lateral etching monitoring unit area group.

[0028] Specifically, S3 also includes the following specific steps:

[0029] S33: Importing the etching state data of each lateral etching monitoring unit area group into the etching time deviation checking sub-strategy, wherein the etching time deviation checking sub-strategy is specifically:

[0030]

[0031] Among them, s2 is the etching time deviation coefficient;

[0032] t 2in ,t 2in-1 Respectively represent the index as 2i n ,2i n -1 is the actual etching time of the etching monitoring unit area;

[0033] For index i n The average value of the actual etching time of the lateral etching monitoring unit area group;

[0034] For I n The average value of the actual etching time of each lateral etching monitoring unit area group;

[0035] S34: extracting the etching angle deviation coefficient and the etching time deviation coefficient to obtain the etching efficiency index of each groove depth layer. The calculation strategy of the etching efficiency index is: xl n =α1×s1+α2×s2, where xl n is the etching efficiency index of the nth groove depth layer, α1 and α2 are the efficiency influence proportional coefficients of etching angle deviation and etching time deviation respectively.

[0036] Specifically, S4 includes the following specific steps:

[0037] S41: acquiring a high-resolution surface topography image of each longitudinal etching monitoring unit area group in adjacent groove depth layers by electronic scanning;

[0038] S42: preprocessing the SEM image using image processing software, including removing noise and smoothing the image, and extracting surface contour data from the preprocessed image using a contour extraction algorithm, wherein the surface contour data includes: the number of peaks and valleys and the height of each peak and valley;

[0039] S43: According to S42, the roughness value of each vertical etching monitoring unit area group is calculated, wherein each vertical etching monitoring unit area group includes: adjacent m-th adjacent groove depth layers n The mth n -1 etching monitoring unit area; in N groove depth layers, at the mth n The etching monitoring unit areas of the columns constitute There are a total of vertical etching monitoring unit area groups on the nth groove depth layer. indivual, is the index of the vertical etching monitoring unit area group,

[0040] The calculation strategy of the roughness value is:

[0041]

[0042] For the Roughness value of each longitudinal etching monitoring unit area group;

[0043] No. The mth vertical etching monitoring unit area group n The number of peak points in an etching monitoring unit area is is the index;

[0044] No. The mth vertical etching monitoring unit area group n-The number of peak points in one etching monitoring unit area is is the index;

[0045] Respectively The height of the peaks and valleys;

[0046] Respectively The heights of the peaks and valleys.

[0047] Specifically, S4 also includes the following specific steps:

[0048] S44: According to S41-S43, the etching quality index of each adjacent groove depth layer is calculated, specifically including: zl n ,zl n-1 are the etching quality indexes of the nth and n-1th groove depth layers, respectively, c′ is the etching quality index of the nth groove depth layer, In the vertical etching monitoring unit area group, The closest roughness value;

[0049] C max ,C min They are The maximum and minimum roughness values ​​in the vertical etching monitoring unit area group.

[0050] Specifically, S5 includes the following specific steps:

[0051] S51: According to the etching efficiency index and the etching quality index, construct an etching standard function F(n), F(n) = k1×xl n +k2×zl n , k1 and k2 are the proportion coefficients of etching efficiency index and etching quality index respectively;

[0052] S52: Preset an etching standard baseline, and when it is monitored that the etching standard value of the groove depth layer is lower than the etching standard baseline, dynamically select the groove depth layer as the etching monitoring unit area to be adjusted, and simultaneously extract the etching efficiency index and etching quality index of the groove depth layer;

[0053] S53: Preset the etching standard efficiency, and when the etching efficiency index of the groove depth layer is lower than the etching standard efficiency, control the direction in which the etching gas in the etching reaction chamber flows into the nozzle;

[0054] S54: Preset the etching standard quality. When the etching quality index of the groove depth layer is lower than the etching standard quality, control the valve opening of the fluoroplastic valve to increase the pressure of the etching gas in the etching reaction chamber.

[0055] In addition, the present invention provides a pressure control system for a pressure sensor, comprising the following modules:

[0056] Digital twin model construction module, unit area division module, etching state data acquisition module, etching efficiency evaluation module, etching quality evaluation module and pressure control strategy execution module;

[0057] The digital twin model building module is used to identify a target etching groove type in an etching task of a semiconductor substrate to be etched, and to establish a digital twin model according to the target etching groove type;

[0058] The unit area division module is used to divide the digital twin model into etching monitoring unit areas;

[0059] The etching state data acquisition module is used to open the fluoroplastic valve, control the etching gas to flow into the etching reaction chamber through the built-in pressure sensor of the fluoroplastic valve, and collect the etching state data of each etching groove on the semiconductor substrate to be etched in real time;

[0060] The etching efficiency evaluation module is used to extract the etching state data of each lateral etching monitoring unit area group on the same groove depth layer, and import the etching state data of each lateral etching monitoring unit area group into the etching efficiency verification strategy to obtain the etching efficiency index of each groove depth layer;

[0061] The etching quality assessment module is used to obtain the etching state data of each longitudinal etching monitoring unit area group in the adjacent groove depth layer through an electronic scanning device, and import the etching state data of each longitudinal etching monitoring unit area group into the etching quality verification strategy to calculate the etching quality index of each adjacent groove depth layer;

[0062] The pressure control strategy execution module dynamically selects the etching monitoring unit area to be adjusted according to the etching efficiency index and the etching quality index, and controls the pressure sensor to execute the pressure control strategy.

[0063] A storage medium stores instructions, and when a computer reads the instructions, the computer executes the pressure control method for a pressure sensor.

[0064] An electronic device comprises a memory, a processor and a computer program stored in the memory and executable on the processor, wherein the processor implements the above-mentioned pressure control method for a pressure sensor when executing the computer program.

[0065] Compared with the prior art, the technical effects of the present invention are as follows:

[0066] 1. By establishing a digital twin model, the present invention can accurately divide the etching monitoring unit area of ​​the semiconductor substrate to be etched, thereby realizing fine control and real-time monitoring of complex grooves (such as V-shaped, U-shaped, and trapezoidal grooves), and improving the accuracy of the shape and depth of the etching groove.

[0067] 2. The present invention collects and analyzes etching status data in real time. Through the etching angle deviation verification sub-strategy and the etching time deviation verification sub-strategy, the etching efficiency can be evaluated in real time. At the same time, the present invention monitors and adjusts the etching parameters in real time during the etching process to ensure that the roughness of the etched surface is controlled within an ideal range, thereby improving the stability of the etching quality, significantly shortening the etching time, and improving production efficiency.

[0068] 3. The present invention dynamically screens the etching monitoring unit area to be adjusted according to the etching efficiency index and the etching quality index, and executes the pressure control strategy. It can dynamically adjust the parameters according to the real-time data in the etching process, cope with the random changes and uncertainties in the etching process, and improve the flexibility and adaptability of the etching process. BRIEF DESCRIPTION OF THE DRAWINGS

[0069] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without paying creative labor.

[0070] in:

[0071] Figure 1 A schematic flow chart of a pressure control method for a pressure sensor of the present invention;

[0072] Figure 2 The figure is a schematic structural diagram of a pressure control system for a pressure sensor of the present invention. DETAILED DESCRIPTION

[0073] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the specific implementation methods of the present invention are described in detail below in conjunction with the accompanying drawings.

[0074] In the following description, many specific details are set forth to facilitate a full understanding of the present invention, but the present invention may also be implemented in other ways different from those described herein, and those skilled in the art may make similar generalizations without violating the connotation of the present invention. Therefore, the present invention is not limited to the specific embodiments disclosed below.

[0075] Secondly, the term "one embodiment" or "embodiment" as used herein refers to a specific feature, structure, or characteristic that may be included in at least one implementation of the present invention. The term "in one embodiment" that appears in different places in this specification does not necessarily refer to the same embodiment, nor does it refer to a separate or selective embodiment that is mutually exclusive with other embodiments.

[0076] Embodiment 1:

[0077] like Figure 1 As shown, a pressure control method for a pressure sensor according to an embodiment of the present invention includes the following specific steps:

[0078] S1: Identify a target etching groove type in an etching task of a semiconductor substrate to be etched, establish a digital twin model according to the target etching groove type, and divide the digital twin model into etching monitoring unit areas;

[0079] S1 includes the following steps:

[0080] S11: Identify a target etching groove type in an etching task of a semiconductor substrate to be etched, and establish a digital twin model according to the target etching groove type, wherein the target etching groove type includes: a V-shaped groove, a trapezoidal groove, a vertical groove, and a U-shaped groove;

[0081] S12: According to the target etching groove type, the digital twin model is divided into etching monitoring unit areas, as follows:

[0082] When the target etching groove type is a V-shaped groove, a trapezoidal groove, or a vertical groove, the groove depth of the target etching groove type is extracted, and the groove depth is evenly divided into a plurality of groove depth layers;

[0083] When the target etching groove type is a U-shaped groove, the groove arc of the U-shaped groove is extracted, the angle formed by the tangent of each point on the groove arc and the center line of the U-shaped groove is calculated, the angle baseline difference range is set, and the points on the groove arc are divided into multiple arc segments according to the angle baseline difference range, wherein the arc segments within the same angle baseline difference range constitute a groove depth layer;

[0084] S13: extracting the total circumference of the side wall of each groove depth layer in the groove at the same time, and evenly dividing the total circumference of the side wall into regions of equal length;

[0085] S14: In the digital twin model, multiple etching monitoring unit areas are obtained, where there are M n An etching monitoring unit area.

[0086] S2: Open the fluoroplastic valve, control the etching gas to flow into the etching reaction chamber through the built-in pressure sensor of the fluoroplastic valve, and collect the etching state data of each etching groove on the semiconductor substrate to be etched in real time;

[0087] In S2, the etching state data includes: actual etching angle data, actual etching time data and etching surface morphology data of each etching monitoring unit area.

[0088] S3: extracting etching state data of each lateral etching monitoring unit area group on the same groove depth layer, and importing the etching state data of each lateral etching monitoring unit area group into the etching efficiency verification strategy to obtain the etching efficiency index of each groove depth layer;

[0089] S3 includes the following specific steps:

[0090] S31: extracting etching state data of each lateral etching monitoring unit area group on the same groove depth layer;

[0091] Wherein, each lateral etching monitoring unit area group includes: the mth adjacent areas on the same groove depth layer n The mth n -1 etching monitoring unit area, there are I n A lateral etching monitoring unit area group, i n The sequence of the lateral etching monitoring unit area group,

[0092] S32: importing the etching state data of each lateral etching monitoring unit area group into an etching efficiency checking strategy, wherein the etching efficiency checking strategy includes: an etching angle deviation checking sub-strategy and an etching time deviation checking sub-strategy;

[0093] The etching angle deviation checking sub-strategy is specifically as follows:

[0094]

[0095] s1 is the etching angle deviation coefficient;

[0096] Respectively represent the index as 2i n ,2i n The actual etching angle of the etching monitoring unit area of ​​-1;

[0097] For index i n The average value of the actual etching angle of the lateral etching monitoring unit area group;

[0098] For In The average value of the actual etching angle of the lateral etching monitoring unit area group.

[0099] S3 also includes the following specific steps:

[0100] S33: Importing the etching state data of each lateral etching monitoring unit area group into the etching time deviation checking sub-strategy, wherein the etching time deviation checking sub-strategy is specifically:

[0101]

[0102] Among them, s2 is the etching time deviation coefficient;

[0103] Respectively represent the index as 2i n ,2i n -1 is the actual etching time of the etching monitoring unit area;

[0104] For index i n The average value of the actual etching time of the lateral etching monitoring unit area group;

[0105] For I n The average value of the actual etching time of each lateral etching monitoring unit area group;

[0106] S34: extracting the etching angle deviation coefficient and the etching time deviation coefficient to obtain the etching efficiency index of each groove depth layer. The calculation strategy of the etching efficiency index is: xl n =α1×s1+α2×s2, where xl n is the etching efficiency index of the nth groove depth layer, α1 and α2 are the efficiency influence proportional coefficients of etching angle deviation and etching time deviation respectively.

[0107] S4: acquiring etching state data of each longitudinal etching monitoring unit area group in adjacent groove depth layers by electronic scanning equipment, and importing the etching state data of each longitudinal etching monitoring unit area group into the etching quality checking strategy to calculate the etching quality index of each adjacent groove depth layer;

[0108] S4 includes the following specific steps:

[0109] S41: acquiring a high-resolution surface topography image of each longitudinal etching monitoring unit area group in adjacent groove depth layers by electronic scanning;

[0110] Exemplarily, in this embodiment, the electron scanning device is an in-situ scanning electron microscope;

[0111] S42: preprocessing the SEM image using image processing software, including removing noise and smoothing the image, and extracting surface contour data from the preprocessed image using a contour extraction algorithm, wherein the surface contour data includes: the number of peaks and valleys and the height of each peak and valley;

[0112] S43: According to S42, the roughness value of each vertical etching monitoring unit area group is calculated, wherein each vertical etching monitoring unit area group includes: adjacent m-th adjacent groove depth layers n The mth n -1 etching monitoring unit area; in N groove depth layers, at the mth n The etching monitoring unit areas of the columns constitute There are a total of vertical etching monitoring unit area groups on the nth groove depth layer. indivual, is the index of the vertical etching monitoring unit area group,

[0113] The calculation strategy of the roughness value is:

[0114]

[0115] For the Roughness value of each longitudinal etching monitoring unit area group;

[0116] No. The mth vertical etching monitoring unit area group n The number of peak points in an etching monitoring unit area is is the index;

[0117] No. The mth vertical etching monitoring unit area group n -The number of peak points in one etching monitoring unit area is is the index;

[0118] Respectively The height of the peaks and valleys;

[0119] Respectively The heights of the peaks and valleys.

[0120] S4 also includes the following specific steps:

[0121] S44: According to S41-S43, the etching quality index of each adjacent groove depth layer is calculated, specifically including: zl n,zl n-1 are the etching quality indexes of the nth and n-1th groove depth layers, respectively, c′ is the etching quality index of the nth groove depth layer, In the vertical etching monitoring unit area group, The closest roughness value;

[0122] C max ,C min They are The maximum and minimum roughness values ​​in the vertical etching monitoring unit area group.

[0123] S5: According to the etching efficiency index and the etching quality index, the etching monitoring unit area to be adjusted is dynamically screened, and the pressure sensor is controlled to execute the pressure control strategy.

[0124] S5 includes the following specific steps:

[0125] S51: According to the etching efficiency index and the etching quality index, construct an etching standard function F(n), F(n) = k1×xl n +k2×zl n , k1 and k2 are the proportion coefficients of etching efficiency index and etching quality index respectively;

[0126] S52: Preset an etching standard baseline, and when it is monitored that the etching standard value of a certain groove depth layer is lower than the etching standard baseline, dynamically select the groove depth layer as the etching monitoring unit area to be adjusted, and simultaneously extract the etching efficiency index and etching quality index of the groove depth layer;

[0127] S53: Preset the etching standard efficiency, and when the etching efficiency index of the groove depth layer is lower than the etching standard efficiency, control the direction in which the etching gas in the etching reaction chamber flows into the nozzle;

[0128] S54: Preset the etching standard quality. When the etching quality index of the groove depth layer is lower than the etching standard quality, control the valve opening of the fluoroplastic valve to increase the pressure of the etching gas in the etching reaction chamber.

[0129] Embodiment 2:

[0130] like Figure 2 As shown, a pressure control system for a pressure sensor according to an embodiment of the present invention includes the following modules:

[0131] Digital twin model construction module, unit area division module, etching state data acquisition module, etching efficiency evaluation module, etching quality evaluation module and pressure control strategy execution module;

[0132] The digital twin model building module is used to identify a target etching groove type in an etching task of a semiconductor substrate to be etched, and to establish a digital twin model according to the target etching groove type;

[0133] The unit area division module is used to divide the digital twin model into etching monitoring unit areas;

[0134] The etching state data acquisition module is used to open the fluoroplastic valve, control the etching gas to flow into the etching reaction chamber through the built-in pressure sensor of the fluoroplastic valve, and collect the etching state data of each etching groove on the semiconductor substrate to be etched in real time;

[0135] The etching efficiency evaluation module is used to extract the etching state data of each lateral etching monitoring unit area group on the same groove depth layer, and import the etching state data of each lateral etching monitoring unit area group into the etching efficiency verification strategy to obtain the etching efficiency index of each groove depth layer;

[0136] The etching quality assessment module is used to obtain the etching state data of each longitudinal etching monitoring unit area group in the adjacent groove depth layer through an electronic scanning device, and import the etching state data of each longitudinal etching monitoring unit area group into the etching quality verification strategy to calculate the etching quality index of each adjacent groove depth layer;

[0137] The pressure control strategy execution module dynamically selects the etching monitoring unit area to be adjusted according to the etching efficiency index and the etching quality index, and controls the pressure sensor to execute the pressure control strategy.

[0138] Embodiment three:

[0139] This embodiment provides an electronic device, including: a processor and a memory, wherein the memory stores a computer program that can be called by the processor;

[0140] The processor executes the above-mentioned pressure control method for a pressure sensor by calling a computer program stored in the memory.

[0141] The electronic device may have relatively large differences due to different configurations or performances, and may include one or more processors (Central Processing Units, CPU) and one or more memories, wherein the memory stores at least one computer program, and the computer program is loaded and executed by the processor to implement a pressure control method for a pressure sensor provided in the above method embodiment. The electronic device may also include other components for implementing the functions of the device, for example, the electronic device may also have components such as a wired or wireless network interface and an input and output interface to input and output data. This embodiment will not be described in detail here.

[0142] Embodiment 4:

[0143] This embodiment provides a computer-readable storage medium having a rewritable computer program stored thereon;

[0144] When the computer program is executed on a computer device, the computer device is enabled to execute the above-mentioned pressure control method for a pressure sensor.

[0145] For example, the computer readable storage medium can be a read-only memory (ROM), a random access memory (RAM), a compact disc (CD-ROM), a magnetic tape, a floppy disk, and an optical data storage device, etc.

[0146] It should be understood that in the various embodiments of the present application, the size of the serial numbers of the above-mentioned processes does not mean the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of the present application.

[0147] It should be understood that determining B based on A does not mean determining B only based on A. B can also be determined based on A and / or other information.

[0148] The above embodiments can be implemented in whole or in part by software, hardware, firmware or any other combination. When implemented by software, the above embodiments can be implemented in whole or in part in the form of a computer program product. The computer program product includes one or more computer instructions or computer programs. When a computer instruction or computer program is loaded or executed on a computer, a process or function according to an embodiment of the present invention is generated in whole or in part. The computer can be a general-purpose computer, a special-purpose computer, a computer network, or other programmable device. Computer instructions can be stored in a computer-readable storage medium, or transmitted from one computer-readable storage medium to another computer-readable storage medium. For example, computer instructions can be transmitted from one website site, computer, server or data center to another website site, computer, server or data center through a wired network or / and a wireless network. The computer-readable storage medium can be any available medium that a computer can access or a data storage device such as a server or data center that contains one or more available media sets. The available medium can be a magnetic medium (for example, a floppy disk, a hard disk, a tape), an optical medium (for example, a DVD), or a semiconductor medium. The semiconductor medium can be a solid-state hard disk.

[0149] Those skilled in the art will appreciate that the units and algorithm steps of each example described in conjunction with the embodiments disclosed in the present invention can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are performed in hardware or software depends on the specific application and design constraints of the technical solution. Professional and technical personnel can use different methods to implement the described functions for each specific application, but such implementation should not be considered to be beyond the scope of the present invention.

[0150] Those skilled in the art can clearly understand that, for the convenience and brevity of description, the specific working processes of the systems, devices and units described above can refer to the corresponding processes in the aforementioned method embodiments and will not be repeated here.

[0151] In the several embodiments provided by the present invention, it should be understood that the disclosed systems, devices and methods can be implemented in other ways. For example, the device embodiments described above are only schematic, for example, the division of units is only one, and there may be other division methods in actual implementation, such as multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some interfaces, indirect coupling or communication connection of devices or units, which can be electrical, mechanical or other forms.

[0152] The units described as separate components may or may not be physically separated, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed on multiple network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0153] In addition, each functional unit in each embodiment of the present invention may be integrated into one processing unit, or each unit may exist physically separately, or two or more units may be integrated into one unit.

[0154] In the description of this specification, the description with reference to the terms "one embodiment", "example", "specific example", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0155] In summary, compared with the prior art, the technical effects of the present invention are as follows:

[0156] 1. By establishing a digital twin model, the present invention can accurately divide the etching monitoring unit area of ​​the semiconductor substrate to be etched, thereby realizing fine control and real-time monitoring of complex grooves (such as V-shaped, U-shaped, and trapezoidal grooves), and improving the accuracy of the shape and depth of the etching groove.

[0157] 2. The present invention collects and analyzes etching status data in real time. Through the etching angle deviation verification sub-strategy and the etching time deviation verification sub-strategy, the etching efficiency can be evaluated in real time. At the same time, the present invention monitors and adjusts the etching parameters in real time during the etching process to ensure that the roughness of the etched surface is controlled within an ideal range, thereby improving the stability of the etching quality, significantly shortening the etching time, and improving production efficiency.

[0158] 3. The present invention dynamically screens the etching monitoring unit area to be adjusted according to the etching efficiency index and the etching quality index, and executes the pressure control strategy. It can dynamically adjust the parameters according to the real-time data in the etching process, cope with the random changes and uncertainties in the etching process, and improve the flexibility and adaptability of the etching process.

[0159] The above shows and describes the basic principles and main features of the present invention and the advantages of the present invention. It should be understood by those skilled in the art that the present invention is not limited to the above embodiments. The above embodiments and descriptions are only for explaining the principles of the present invention. Without departing from the spirit and scope of the present invention, the present invention may have various changes and improvements, which fall within the scope of the present invention to be protected. The scope of protection of the present invention is defined by the attached claims and their equivalents.

Claims

1. A pressure control method for a pressure sensor, characterized in that: The method comprises the following specific steps: S1: Identify a target etching groove type in an etching task of a semiconductor substrate to be etched, establish a digital twin model according to the target etching groove type, and divide the digital twin model into etching monitoring unit areas; S2: Open the fluoroplastic valve, control the etching gas to flow into the etching reaction chamber through the built-in pressure sensor of the fluoroplastic valve, and collect the etching state data of each etching groove on the semiconductor substrate to be etched in real time; S3: extracting etching state data of each lateral etching monitoring unit area group on the same groove depth layer, and importing the etching state data of each lateral etching monitoring unit area group into the etching efficiency verification strategy to obtain the etching efficiency index of each groove depth layer; S4: acquiring etching state data of each longitudinal etching monitoring unit area group in adjacent groove depth layers by electronic scanning equipment, and importing the etching state data of each longitudinal etching monitoring unit area group into the etching quality checking strategy to calculate the etching quality index of each adjacent groove depth layer; S5: According to the etching efficiency index and the etching quality index, the etching monitoring unit area to be adjusted is dynamically screened, and the pressure sensor is controlled to execute the pressure control strategy.

2. A pressure control method for a pressure sensor according to claim 1, characterized in that: S1 includes the following steps: S11: Identify a target etching groove type in an etching task of a semiconductor substrate to be etched, and establish a digital twin model according to the target etching groove type, wherein the target etching groove type includes: a V-shaped groove, a trapezoidal groove, a vertical groove, and a U-shaped groove; S12: According to the target etching groove type, the digital twin model is divided into etching monitoring unit areas, as follows: When the target etching groove type is a V-shaped groove, a trapezoidal groove, or a vertical groove, the groove depth of the target etching groove type is extracted, and the groove depth is evenly divided into a plurality of groove depth layers; When the target etching groove type is a U-shaped groove, the groove arc of the U-shaped groove is extracted, the angle formed by the tangent of each point on the groove arc and the center line of the U-shaped groove is calculated, the angle baseline difference range is set, and the points on the groove arc are divided into multiple arc segments according to the angle baseline difference range, wherein the arc segments within the same angle baseline difference range constitute a groove depth layer; S13: extracting the total circumference of the side wall of each groove depth layer in the groove at the same time, and evenly dividing the total circumference of the side wall into regions of equal length; S14: In the digital twin model, multiple etching monitoring unit areas are obtained, where there are M n An etching monitoring unit area.

3. A pressure control method for a pressure sensor according to claim 2, characterized in that: In S2, the etching state data includes: actual etching angle data, actual etching time data and etching surface morphology data of each etching monitoring unit area.

4. A pressure control method for a pressure sensor according to claim 3, characterized in that: S3 includes the following specific steps: S31: extracting etching state data of each lateral etching monitoring unit area group on the same groove depth layer; Wherein, each lateral etching monitoring unit area group includes: the mth adjacent areas on the same groove depth layer n The mth n -1 etching monitoring unit area, there are I n A lateral etching monitoring unit area group, i n The sequence of the lateral etching monitoring unit area group, S32: importing the etching state data of each lateral etching monitoring unit area group into an etching efficiency checking strategy, wherein the etching efficiency checking strategy includes: an etching angle deviation checking sub-strategy and an etching time deviation checking sub-strategy; The etching angle deviation checking sub-strategy is specifically as follows: s1 is the etching angle deviation coefficient; Respectively represent the index as 2i n ,2i n The actual etching angle of the etching monitoring unit area of ​​-1; For index i n The average value of the actual etching angle of the lateral etching monitoring unit area group; For I n The average value of the actual etching angle of the lateral etching monitoring unit area group.

5. A pressure control method for a pressure sensor according to claim 4, characterized in that: S3 also includes the following specific steps: S33: Importing the etching state data of each lateral etching monitoring unit area group into the etching time deviation checking sub-strategy, wherein the etching time deviation checking sub-strategy is specifically: Among them, s2 is the etching time deviation coefficient; Respectively represent the index as 2i n ,2i n -1 is the actual etching time of the etching monitoring unit area; For index i n The average value of the actual etching time of the lateral etching monitoring unit area group; For I n The average value of the actual etching time of each lateral etching monitoring unit area group; S34: extracting the etching angle deviation coefficient and the etching time deviation coefficient to obtain the etching efficiency index of each groove depth layer. The calculation strategy of the etching efficiency index is: xl n =α1×s1+α2×s2, where xl n is the etching efficiency index of the nth groove depth layer, α1 and α2 are the efficiency influence proportional coefficients of etching angle deviation and etching time deviation respectively.

6. A pressure control method for a pressure sensor according to claim 5, characterized in that: S4 includes the following specific steps: S41: acquiring a high-resolution surface topography image of each longitudinal etching monitoring unit area group in adjacent groove depth layers by electronic scanning; S42: preprocessing the SEM image using image processing software, including removing noise and smoothing the image, and extracting surface contour data from the preprocessed image using a contour extraction algorithm, wherein the surface contour data includes: the number of peaks and valleys and the height of each peak and valley; S43: According to S42, the roughness value of each vertical etching monitoring unit area group is calculated, wherein each vertical etching monitoring unit area group includes: adjacent m-th adjacent groove depth layers n The mth n -1 etching monitoring unit area; in N groove depth layers, at the mth n The etching monitoring unit areas of the columns constitute There are a total of vertical etching monitoring unit area groups on the nth groove depth layer. indivual, is the index of the vertical etching monitoring unit area group, The calculation strategy of the roughness value is: For the Roughness value of each longitudinal etching monitoring unit area group; No. The mth vertical etching monitoring unit area group n The number of peak points in an etching monitoring unit area is is the index; No. The mth vertical etching monitoring unit area group n -The number of peak points in one etching monitoring unit area is is the index; Respectively The height of the peaks and valleys; Respectively The heights of the peaks and valleys.

7. A pressure control method for a pressure sensor according to claim 6, characterized in that: S4 also includes the following specific steps: S44: According to S41-S43, the etching quality index of each adjacent groove depth layer is calculated, specifically including: zl n ,zl n-1 are the etching quality indexes of the nth and n-1th groove depth layers, respectively, c′ is the etching quality index of the nth groove depth layer, In the vertical etching monitoring unit area group, The closest roughness value; C max ,C min They are The maximum and minimum roughness values ​​in the vertical etching monitoring unit area group.

8. A pressure control method for a pressure sensor according to claim 7, characterized in that: S5 includes the following specific steps: S51: According to the etching efficiency index and the etching quality index, construct an etching standard function F(n), F(n) = k1×xl n +k2×zl n , k1 and k2 are the proportion coefficients of etching efficiency index and etching quality index respectively; S52: Preset an etching standard baseline, and when it is monitored that the etching standard value of the groove depth layer is lower than the etching standard baseline, dynamically select the groove depth layer as the etching monitoring unit area to be adjusted, and simultaneously extract the etching efficiency index and etching quality index of the groove depth layer; S53: Preset the etching standard efficiency, and when the etching efficiency index of the groove depth layer is lower than the etching standard efficiency, control the direction in which the etching gas in the etching reaction chamber flows into the nozzle; S54: Preset the etching standard quality. When the etching quality index of the groove depth layer is lower than the etching standard quality, control the valve opening of the fluoroplastic valve to increase the pressure of the etching gas in the etching reaction chamber.

9. A pressure control system for a pressure sensor, used to implement a pressure control method for a pressure sensor according to any one of claims 1 to 8, characterized in that: The system includes the following modules: Digital twin model construction module, unit area division module, etching state data acquisition module, etching efficiency evaluation module, etching quality evaluation module and pressure control strategy execution module; The digital twin model building module is used to identify a target etching groove type in an etching task of a semiconductor substrate to be etched, and to establish a digital twin model according to the target etching groove type; The unit area division module is used to divide the digital twin model into etching monitoring unit areas; The etching state data acquisition module is used to open the fluoroplastic valve, control the etching gas to flow into the etching reaction chamber through the built-in pressure sensor of the fluoroplastic valve, and collect the etching state data of each etching groove on the semiconductor substrate to be etched in real time; The etching efficiency evaluation module is used to extract the etching state data of each lateral etching monitoring unit area group on the same groove depth layer, and import the etching state data of each lateral etching monitoring unit area group into the etching efficiency verification strategy to obtain the etching efficiency index of each groove depth layer; The etching quality assessment module is used to obtain the etching state data of each longitudinal etching monitoring unit area group in the adjacent groove depth layer through an electronic scanning device, and import the etching state data of each longitudinal etching monitoring unit area group into the etching quality verification strategy to calculate the etching quality index of each adjacent groove depth layer; The pressure control strategy execution module dynamically selects the etching monitoring unit area to be adjusted according to the etching efficiency index and the etching quality index, and controls the pressure sensor to execute the pressure control strategy.

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