Laser annealing device for silicon carbide wafer

Abstract

The invention belongs to the technical field of semiconductor manufacturing, and discloses a laser annealing device for silicon carbide wafers, which comprises a shell, a laser heating module is arranged on the inner wall of the shell, a wafer tray is arranged on the inner wall of the shell through a buffer mechanism, and a fixing mechanism is arranged on the inner wall of the wafer tray. A connecting mechanism is arranged on the outer wall of the bottom end of the wafer tray; the connecting mechanism comprises a connecting block, the inner wall of the connecting block is elastically connected with a moving block through a connecting spring, the outer wall of the moving block is fixedly connected with a handle, the outer wall of the moving block is fixedly connected with a trapezoidal block, the inner wall of the connecting block is slidably connected with a sliding rod, and the inner wall of the connecting block is slidably connected with a limiting block. According to the invention, through the cooperation of structures such as the trapezoidal blocks and the limiting blocks, the number of used wafer trays can be flexibly adjusted, and the splicing and splitting processes are convenient and rapid, so that the use flexibility of the wafer trays is improved.

Description

Technical Field

[0001] The invention belongs to the technical field of semiconductor manufacturing, and in particular relates to a laser annealing device for silicon carbide wafers. Background Art

[0002] The laser annealing device for silicon carbide wafers is a device specially used for annealing silicon carbide wafers. It mainly generates a high-energy density laser beam by a laser generation system, transmits the laser through the beam transmission and shaping system, adjusts the spot size and shape, and then acts on the silicon carbide wafer placed on the sample support and positioning system. At the same time, there is a monitoring and control system to monitor parameters in real time, and control parameters such as laser power according to feedback information, thereby changing the lattice structure and internal stress state of atoms on the wafer surface and within a certain depth range to achieve the annealing purpose.

[0003] During the laser annealing process of silicon carbide wafers, different process stages have different requirements on the number of wafers. In small-batch experiments or initial process debugging stages, only a small number of wafers need to be processed, while in the large-scale production stage, multiple wafers may need to be annealed at the same time. In some existing technologies, wafers need to be placed on trays during annealing, and some trays are individually set. When multiple groups of wafers need to be annealed at the same time, the trays need to be placed in the device one by one, which is more troublesome. After the annealing is completed, they need to be taken out one by one. Therefore, a laser annealing device for silicon carbide wafers is proposed to address the above problems. Summary of the invention

[0004] In order to solve the problems raised in the above background technology, the present invention provides a laser annealing device for silicon carbide wafers, which solves the problem that the wafer tray in the prior art is inconvenient to use.

[0005] To achieve the above object, the present invention provides the following technical solution: a laser annealing device for silicon carbide wafers, comprising a shell, the inner wall of the shell is provided with a laser heating module, the inner wall of the shell is provided with a wafer tray through a buffer mechanism, the inner wall of the wafer tray is provided with a fixing mechanism, and the outer wall of the bottom end of the wafer tray is provided with a connecting mechanism;

[0006] The connecting mechanism includes a connecting block, the inner wall of the connecting block is elastically connected to a moving block through a connecting spring, the outer wall of the moving block is fixedly connected to a handle, the outer wall of the moving block is fixedly connected to a trapezoidal block, the inner wall of the connecting block is slidably connected to a sliding rod, the inner wall of the connecting block is slidably connected to a limiting block, the inner wall of the connecting block is slidably connected to an abutting block, a limiting groove is provided on the outer wall of the connecting block, the outer wall of the wafer tray is fixedly connected to a T-shaped block, and the outer wall of the wafer tray is provided with a T-shaped groove.

[0007] Preferably, the connecting block is fixedly connected to the outer wall of the bottom end of the wafer tray, the trapezoidal block is slidably connected to the inner wall of the connecting block, and the T-shaped block is clamped to the T-shaped slot.

[0008] Preferably, one end of the connecting spring is fixedly connected to the outer wall of the moving block, the other end of the connecting spring is fixedly connected to the inner wall of the connecting block, and the moving block is slidably connected to the inner wall of the connecting block.

[0009] Preferably, one end of the slide rod is slidably connected to the outer wall of the trapezoidal block, the other end of the slide rod is fixedly connected to the outer wall of the limit block, and the limit block is snap-fitted to the limit groove.

[0010] Preferably, the fixing mechanism includes a pressure block, the outer wall of the bottom end of the pressure block is fixedly connected to a round rod, the inner wall of the wafer tray is rotatably connected to a turntable, the outer wall of the turntable is fixedly connected to a tooth block A, the outer wall of the turntable is provided with an inclined groove, the outer wall of the wafer tray is provided with a guide groove, the inner wall of the wafer tray is rotatably connected to a rotating rod, the outer wall of the rotating rod is threadedly connected to a threaded ring, and the outer wall of the rotating rod is fixedly connected to a tooth block B.

[0011] Preferably, the pressing block is slidably connected to the outer wall of the wafer tray, and the round rod is in contact with the inner walls of the guide groove and the inclined groove.

[0012] Preferably, the tooth block A is meshed with the tooth block B, and the threaded collar is in contact with the top outer wall of the wafer tray.

[0013] Preferably, the buffer mechanism includes a base, the inner wall of the base is elastically connected to a buffer block via an elastic telescopic rod, the inner wall of the base is rotatably connected to a rotating wheel, a traction rope is wound around the outer wall of the rotating wheel, and the inner wall of the base is elastically connected to a counterweight block via a buffer spring.

[0014] Preferably, the base is fixedly connected to the inner wall of the shell, the movable end of the elastic telescopic rod is fixedly connected to the buffer block, the buffer block is slidably connected to the inner wall of the base, one end of the traction rope is fixedly connected to the counterweight block, and the other end of the traction rope is fixedly connected to the outer wall of the buffer block.

[0015] Preferably, one end of the buffer spring is fixedly connected to the outer wall of the counterweight block, the other end of the buffer spring is fixedly connected to the inner wall of the base, and the counterweight block is slidably connected to the inner wall of the base.

[0016] Compared with the prior art, the present invention has the following beneficial effects:

[0017] The present invention provides the cooperation of structures such as trapezoidal blocks and limit blocks. When splicing two groups of wafer trays, the handle is pulled and the T-shaped blocks of one group of wafer trays are inserted into the T-shaped grooves of the other group of wafer trays. The limit blocks are engaged with the limit grooves to complete the splicing. When splitting, the handle is also pulled so that the abutment blocks in one group of connecting blocks squeeze the limit blocks in the other group of connecting blocks so that they are out of contact with the limit grooves and can be separated. Therefore, the number of wafer trays used can be adjusted more flexibly, and the process of splicing and splitting is more convenient and quick, thereby improving the flexibility of using the wafer trays.

[0018] The present invention provides a combination of structures such as a pressing block and a turntable, and rotates a threaded collar to disengage the pressing block from the wafer tray. The turntable can be driven to rotate by rotating a rotating rod, so that the turntable can drive the three groups of pressing blocks to move toward the middle or the outside at the same time. When the silicon carbide wafer is placed in the wafer tray, the positions of the three groups of pressing blocks can be adjusted to clamp and fix the wafer. The operation is simple, and the process of clamping and fixing the wafer is facilitated.

[0019] The present invention arranges the cooperation of structures such as the buffer block and the counterweight block. When the shell generates vibration during operation, the elastic telescopic rod can provide a certain buffer force, and the buffer block will pull the counterweight block when it moves under the force. When the counterweight block moves, the rubber gasket on its outer wall contacts the inner wall of the base, and the friction between the two is relatively high, thereby reducing the amplitude of movement of the buffer block, thereby improving the buffering effect, and preventing the wafer from being damaged by excessive vibration impact force. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 It is a schematic diagram of the main structure of the present invention;

[0021] Figure 2 It is a schematic diagram of the structure of the buffer mechanism, the connecting mechanism and the fixing mechanism of the present invention;

[0022] Figure 3 This is a schematic diagram of the exploded structure of the wafer tray and the connecting mechanism of the present invention;

[0023] Figure 4 This is a schematic diagram of the cross-sectional structure of the connecting block of the present invention;

[0024] Figure 5 It is a schematic diagram of the cross section and fixing mechanism structure of the wafer tray of the present invention;

[0025] Figure 6 It is a schematic diagram of the fixing mechanism structure of the present invention;

[0026] Figure 7 It is a schematic diagram of the exploded structure of the base, buffer block section, and connecting mechanism of the present invention;

[0027] Figure 8 For the present invention Figure 7A schematic diagram of the enlarged structure of part A.

[0028] In the figure: 1. Shell; 2. Buffer mechanism; 201. Base; 202. Elastic telescopic rod; 203. Buffer block; 204. Rotating wheel; 205. Towing rope; 206. Counterweight block; 207. Buffer spring; 3. Wafer tray; 4. Connecting mechanism; 401. Connecting block; 402. T-shaped block; 403. T-shaped slot; 404. Handle; 405. Moving block; 406. Connecting spring; 407. Trapezoidal block; 408. Sliding rod; 409. Limiting block; 410. Connecting rod; 411. Abutting block; 412. Limiting slot; 5. Fixing mechanism; 501. Pressing block; 502. Round rod; 503. Rotating disk; 504. Tooth block A; 505. Guide slot; 506. Rotating rod; 507. Threaded collar; 508. Tooth block B; 509. Bevel slot; 6. Laser heating module. DETAILED DESCRIPTION

[0029] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0030] like Figures 1 to 4 As shown, the present invention provides a laser annealing device for silicon carbide wafers, comprising a shell 1, an inner wall of the shell 1 is provided with a laser heating module 6, an inner wall of the shell 1 is provided with a wafer tray 3 through a buffer mechanism 2, an inner wall of the wafer tray 3 is provided with a fixing mechanism 5, and an outer wall of the bottom end of the wafer tray 3 is provided with a connecting mechanism 4; the connecting mechanism 4 comprises a connecting block 401, an inner wall of the connecting block 401 is elastically connected with a moving block 405 through a connecting spring 406, an outer wall of the moving block 405 is fixedly connected with a handle 404, an outer wall of the moving block 405 is fixedly connected with a trapezoidal block 407, an inner wall of the connecting block 401 is slidably connected with a sliding rod 408, an inner wall of the connecting block 401 is slidably connected with a limiting block 409, an inner wall of the connecting block 401 is slidably connected with an abutting block 411, an outer wall of the connecting block 401 is provided with a limiting groove 412, an outer wall of the wafer tray 3 is fixedly connected with a T-shaped block 402, and an outer wall of the wafer tray 3 is provided with a T-shaped groove 403.

[0031] The above scheme is adopted: the shell 1 is the main body of the shell of the laser annealing device for silicon carbide wafers, and the silicon carbide wafers to be returned can be placed on the wafer tray 3. After being fixed by the fixing mechanism 5, the laser heating module 6 can generate a high-temperature beam to heat and anneal it, which is a prior art; through the connecting mechanism 4, multiple wafer trays 3 can be connected and fixed, so that a suitable number of wafer trays 3 can be selected according to actual needs to be placed in the shell 1 for annealing, not only can a group of silicon carbide wafers be annealed separately, but also multiple groups can be annealed at the same time, and it is convenient to connect the wafer trays 3; on a group of wafer trays 3, T-blocks 402 and T-slots 403 are arranged on both sides, and the T-blocks 402 of one group of wafer trays 3 can be clamped with the T-slots 403 of another group of wafer trays 3, so that the vertical position between the two is fixed; by connecting the lower connecting blocks 401, the two groups of wafer trays 3 can be completely spliced ​​and fixed.

[0032] like Figures 2 to 4 As shown, the connecting block 401 is fixedly connected to the outer wall of the bottom end of the wafer tray 3, the trapezoidal block 407 is slidably connected to the inner wall of the connecting block 401, and the T-shaped block 402 is clamped with the T-shaped slot 403; one end of the connecting spring 406 is fixedly connected to the outer wall of the moving block 405, and the other end of the connecting spring 406 is fixedly connected to the inner wall of the connecting block 401, and the moving block 405 is slidably connected to the inner wall of the connecting block 401; one end of the sliding rod 408 is slidably connected to the outer wall of the trapezoidal block 407, and the other end of the sliding rod 408 is fixedly connected to the outer wall of the limit block 409, and the limit block 409 is clamped with the limit slot 412.

[0033] The above scheme is adopted: the handle 404 passes through the front end outer wall of the connecting block 401, and when the handle 404 is pulled, the moving block 405 can be driven to move and the connecting spring 406 can be stretched; the trapezoidal blocks 407 are provided with four groups, two groups on each side, and the directions of the trapezoidal blocks 407 on both sides are opposite. The two groups of trapezoidal blocks 407 on each side are fixed by the connecting rod 410. When the moving block 405 is pulled, the trapezoidal blocks 407 will move synchronously therewith; under normal conditions, the connecting spring 406 maintains According to the relative position of the moving block 405 in the connecting block 401, the slide bar 408 on the trapezoidal block 407 on one side of the limiting block 409 is always in contact with its long side slope, and the slide bar 408 on the trapezoidal block 407 on one side of the abutting block 411 is always in contact with its short side slope. When the handle 404 is pulled to move the moving block 405 and the trapezoidal block 407, the trapezoidal block 407 on one side will drive the limiting block 409 to move toward the inner wall of the connecting block 401 through the corresponding slide bar 408. When two sets of wafer trays 3 are connected, the T-shaped block 402 is aligned with the T-shaped slot 403, and the handle 404 in one set of connecting mechanisms 4 is pulled to move the stop block 409 to the inner wall of the connecting block 401, so that the T-shaped block 402 can be inserted into the T-shaped slot 403. When the handle 404 is released, the connecting spring 406 drives the moving block 405 due to the elastic force. After resetting with the trapezoidal block 407, the limit block 409 moves outward and engages with the limit groove 412 of the other group of wafer trays 3 to complete the splicing; when the two groups of wafer trays 3 need to be separated, the handle 404 can also be pulled, and the abutment block 411 in one group of connecting mechanisms 4 moves outward and squeezes the limit block 409 in the other group of connecting mechanisms 4 to make it disengage from the limit groove 412, so that the splicing state of the two groups of wafer trays 3 can be released and they can be removed, which is more convenient to operate.

[0034] like Figures 5 and 6 As shown, the fixing mechanism 5 includes a pressing block 501, a round rod 502 is fixedly connected to the outer wall of the bottom end of the pressing block 501, a turntable 503 is rotatably connected to the inner wall of the wafer tray 3, a tooth block A504 is fixedly connected to the outer wall of the turntable 503, an inclined groove 509 is provided on the outer wall of the turntable 503, a guide groove 505 is provided on the outer wall of the wafer tray 3, a rotating rod 506 is rotatably connected to the inner wall of the rotating rod 506, a threaded collar 507 is threadedly connected to the outer wall of the rotating rod 506, and a tooth block B508 is fixedly connected to the outer wall of the rotating rod 506; the pressing block 501 is slidably connected to the outer wall of the wafer tray 3, the round rod 502 is in contact with the inner walls of the guide groove 505 and the inclined groove 509; the tooth block A504 is meshed with the tooth block B508, and the threaded collar 507 is in contact with the top outer wall of the wafer tray 3.

[0035] According to the above scheme, the silicon carbide wafer can be placed in the wafer tray 3 and fixed by the fixing mechanism 5 to prevent it from shifting during the annealing process and affecting the annealing effect. The pressing block 501 is used to fix the silicon carbide wafer placed on the wafer tray 3. When the rotating rod 506 is rotated, due to the meshing relationship between the tooth block A 504 and the tooth block B 508, the turntable 503 will rotate accordingly. During the rotation of the turntable 503, the inclined groove 509 pushes the round rod 502 to move. Since the round rod 502 is in contact with the inner wall of the guide groove 505, the round rod 502 is in contact with the inner wall of the guide groove 505. When the threaded collar 507 is rotated to make it disengage from the outer wall of the top end of the wafer tray 3, the limit of the rotating rod 506 can be released to rotate it, and when the threaded collar 507 is rotated in the opposite direction to make it contact with the outer wall of the top end of the wafer tray 3, the two are tightly fitted together so that the rotating rod 506 cannot rotate, thereby ensuring the stability of the fixing mechanism 5.

[0036] like Figures 7 and 8 As shown, the buffer mechanism 2 includes a base 201, the inner wall of the base 201 is elastically connected to a buffer block 203 through an elastic telescopic rod 202, the inner wall of the base 201 is rotatably connected to a rotating wheel 204, the outer wall of the rotating wheel 204 is wound with a traction rope 205, and the inner wall of the base 201 is elastically connected to a counterweight 206 through a buffer spring 207; the base 201 is fixedly connected to the inner wall of the shell 1, the movable end of the elastic telescopic rod 202 is fixedly connected to the buffer block 203, the buffer block 203 is slidably connected to the inner wall of the base 201, one end of the traction rope 205 is fixedly connected to the counterweight 206, and the other end of the traction rope 205 is fixedly connected to the outer wall of the buffer block 203; one end of the buffer spring 207 is fixedly connected to the outer wall of the counterweight 206, the other end of the buffer spring 207 is fixedly connected to the inner wall of the base 201, and the counterweight 206 is slidably connected to the inner wall of the base 201.

[0037] The above scheme is adopted: the elastic telescopic rod 202 on the base 201 cooperates with the buffer block 203 to provide a buffer force in the vertical direction; when the wafer tray 3 is subjected to the impact force of the equipment operation vibration, the buffer block 203 will compress the elastic telescopic rod 202, and the elastic telescopic rod 202 will undergo elastic deformation to absorb and disperse the impact force, thereby protecting the wafer tray 3 and the wafers placed thereon from severe vibration; the rotating wheel 204, the traction rope 205 and the counterweight block 206 constitute a damping system, and the outer wall of the counterweight block 206 is provided with a rubber gasket. When the counterweight 203 is impacted and moves downward, the traction rope 205 will pull the counterweight 206 to move upward, and the buffer spring 207 will be stretched. The movement of the counterweight 206 and the elastic deformation of the buffer spring 207 further consume the energy of the impact force. At the same time, the buffer block 203 can be restored to its initial position to a certain extent through the rebound force of the buffer spring 207. When the counterweight 206 moves, the rubber gasket contacts the inner wall of the base 201, and the friction between the two is relatively high, thereby reducing the amplitude of the vibration and reducing the impact of the vibration on the silicon carbide wafer.

[0038] The working principle and use process of the present invention:

[0039] The operator can first place the silicon carbide wafer to be annealed in the wafer tray 3, and then rotate the threaded collar 507 in the fixing mechanism 5 to make it disengage from the outer wall of the top of the wafer tray 3, and then rotate the rotating rod 506. Due to the meshing relationship between the tooth block A504 and the tooth block B508, the turntable 503 rotates accordingly, and the inclined groove 509 pushes the round rod 502 to move. According to the diameter of the silicon carbide wafer, the pressing block 501 is adjusted to a suitable spacing to just contact the outer wall of the silicon carbide wafer. Then, the threaded collar 507 is rotated in the opposite direction to make it fit tightly with the outer wall of the top of the wafer tray 3, limit the rotation of the rotating rod 506, ensure the stability of the fixing mechanism 5, and complete the fixation of the wafer.

[0040] If it is necessary to anneal multiple wafers at one time, multiple groups of wafer trays 3 can be spliced ​​together; the T-shaped block 402 of one group of wafer trays 3 can be first aligned with the T-shaped slot 403 of another group of wafer trays 3, and the handle 404 in one group of connecting mechanisms 4 is pulled to drive the moving block 405 to move and stretch the connecting spring 406, and the trapezoidal block 407 moves synchronously therewith. At this time, the trapezoidal block 407 on one side drives the limiting block 409 to move toward the inner wall of the connecting block 401 through the corresponding sliding rod 408, and the trapezoidal block 407 on the other side drives the abutting block 411 to move toward the outside of the connecting block 401; then the T-shaped block 402 is inserted into the T-shaped slot 403, the handle 404 is released, and the elastic force of the connecting spring 406 drives the moving block 405 and the trapezoidal block 407 to reset, and the limiting block 409 moves outward and engages with the limiting slot 412 of the other group of wafer trays 3, completing the splicing of the two groups of wafer trays 3.

[0041] After completing the splicing of multiple groups of wafer trays 3 according to the above operations, the connected wafer trays 3 are placed in the buffer block 203, and the laser heating module 6 can be started to generate a high-temperature light beam to heat and anneal the silicon carbide wafers on the wafer tray 3. This is a conventional operation in the prior art; during the operation, the shell 1 will vibrate, and the elastic telescopic rod 202 cooperates with the buffer block 203 to provide a buffering force for the wafer tray 3 in the vertical direction. At the same time, the damping system composed of the rotating wheel 204, the traction rope 205 and the counterweight block 206 further consumes the impact force energy generated by the vibration of the equipment operation, thereby reducing the impact of the vibration shock on the wafer.

[0042] When the annealing of multiple groups of wafers is completed, the handle 404 in one group of connecting mechanisms 4 can be pulled to move the abutment block 411 in the group of connecting mechanisms 4 outward and squeeze the limit block 409 in the other group of connecting mechanisms 4 to make it disengage from the limit groove 412, so that the two groups of wafer trays 3 can be separated quickly and conveniently, and the threaded ring 507 is rotated to release the limit of the rotating rod 506, which is rotated in the opposite direction to disengage the pressure block 501 from the wafer, and the annealed silicon carbide wafer in the wafer tray 3 can be taken out, completing the entire workflow.

[0043] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device.

[0044] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A laser annealing device for silicon carbide wafers, comprising a housing (1), characterized in that: The inner wall of the shell (1) is provided with a laser heating module (6), the inner wall of the shell (1) is provided with a wafer tray (3) via a buffer mechanism (2), the inner wall of the wafer tray (3) is provided with a fixing mechanism (5), and the outer wall of the bottom end of the wafer tray (3) is provided with a connecting mechanism (4); The connecting mechanism (4) comprises a connecting block (401), the inner wall of the connecting block (401) is elastically connected to a moving block (405) via a connecting spring (406), the outer wall of the moving block (405) is fixedly connected to a handle (404), the outer wall of the moving block (405) is fixedly connected to a trapezoidal block (407), the inner wall of the connecting block (401) is slidably connected to a sliding rod (408), the inner wall of the connecting block (401) is slidably connected to a limiting block (409), the inner wall of the connecting block (401) is slidably connected to an abutting block (411), the outer wall of the connecting block (401) is provided with a limiting groove (412), the outer wall of the wafer tray (3) is fixedly connected to a T-shaped block (402), and the outer wall of the wafer tray (3) is provided with a T-shaped groove (403).

2. The laser annealing device for silicon carbide wafer according to claim 1, characterized in that: The connecting block (401) is fixedly connected to the outer wall of the bottom end of the wafer tray (3), the trapezoidal block (407) is slidably connected to the inner wall of the connecting block (401), and the T-shaped block (402) is snap-fitted to the T-shaped slot (403).

3. The laser annealing device for silicon carbide wafer according to claim 1, characterized in that: One end of the connecting spring (406) is fixedly connected to the outer wall of the moving block (405), the other end of the connecting spring (406) is fixedly connected to the inner wall of the connecting block (401), and the moving block (405) is slidably connected to the inner wall of the connecting block (401).

4. The laser annealing device for silicon carbide wafer according to claim 1, characterized in that: One end of the slide bar (408) is slidably connected to the outer wall of the trapezoidal block (407), and the other end of the slide bar (408) is fixedly connected to the outer wall of the limit block (409), and the limit block (409) is snap-fitted to the limit groove (412).

5. The laser annealing device for silicon carbide wafer according to claim 1, characterized in that: The fixing mechanism (5) comprises a pressing block (501), the outer wall of the bottom end of the pressing block (501) is fixedly connected to a round rod (502), the inner wall of the wafer tray (3) is rotatably connected to a turntable (503), the outer wall of the turntable (503) is fixedly connected to a tooth block A (504), the outer wall of the turntable (503) is provided with an inclined groove (509), the outer wall of the wafer tray (3) is provided with a guide groove (505), the inner wall of the wafer tray (3) is rotatably connected to a rotating rod (506), the outer wall of the rotating rod (506) is threadedly connected to a threaded collar (507), and the outer wall of the rotating rod (506) is fixedly connected to a tooth block B (508).

6. The laser annealing device for silicon carbide wafer according to claim 5, characterized in that: The pressing block (501) is slidably connected to the outer wall of the wafer tray (3), and the round rod (502) is in contact with the inner walls of the guide groove (505) and the inclined groove (509).

7. The laser annealing device for silicon carbide wafer according to claim 5, characterized in that: The tooth block A (504) is meshed with the tooth block B (508), and the threaded collar (507) is in contact with the top outer wall of the wafer tray (3).

8. The laser annealing device for silicon carbide wafer according to claim 1, characterized in that: The buffer mechanism (2) comprises a base (201), the inner wall of the base (201) being elastically connected to a buffer block (203) via an elastic telescopic rod (202), the inner wall of the base (201) being rotatably connected to a rotating wheel (204), a traction rope (205) being wound around the outer wall of the rotating wheel (204), and the inner wall of the base (201) being elastically connected to a counterweight block (206) via a buffer spring (207).

9. The laser annealing device for silicon carbide wafer according to claim 8, characterized in that: The base (201) is fixedly connected to the inner wall of the shell (1); the movable end of the elastic telescopic rod (202) is fixedly connected to the buffer block (203); the buffer block (203) is slidably connected to the inner wall of the base (201); one end of the traction rope (205) is fixedly connected to the counterweight block (206); and the other end of the traction rope (205) is fixedly connected to the outer wall of the buffer block (203).

10. The laser annealing device for silicon carbide wafer according to claim 8, characterized in that: One end of the buffer spring (207) is fixedly connected to the outer wall of the counterweight (206), the other end of the buffer spring (207) is fixedly connected to the inner wall of the base (201), and the counterweight (206) is slidably connected to the inner wall of the base (201).

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