An integrated MOSFET module and cooling assembly for high power applications

Abstract

The present invention relates to the field of power electronics technology, and more specifically, to an integrated MOSFET module and cooling assembly for high-power applications. The module comprises a packaging shell, which comprises an upper isolation plate, a middle isolation plate, a lower isolation plate and a circuit structure arranged on the middle isolation plate in parallel from top to bottom. In the present invention, the electronic component is in direct contact with the upper isolation plate, and the two sides of the electronic component are in contact with thermal conductive silicone grease respectively, thereby increasing the heat conduction area. When the circuit is working, the heat generated by the electronic component will be directly conducted to the upper isolation plate and the lower isolation plate through the upper isolation plate and the thermal conductive silicone grease indirectly. The upper isolation plate, the middle isolation plate, the lower isolation plate, the fixed shielding plate and the movable shielding plate made of aluminum nitride have excellent electrical insulation and thermal conductivity, and can timely conduct and dissipate the heat, thereby ensuring the cooling effect on the electronic component.

Description

Technical Field

[0001] The invention relates to the technical field of power electronics, in particular to an integrated MOSFET module and a cooling assembly for high-power applications. Background Art

[0002] Integrated MOSFET modules are part of integrated circuit manufacturing. Integrated MOSFET modules usually contain multiple MOSFETs and other electronic components. These components are integrated in a package to form a circuit module with specific functions. High-power MOSFET modules are used for energy rectification, conversion and transmission to achieve efficient use of energy.

[0003] For example, CN115910979A involves a three-phase high-power SiC MOSFET module, which includes a substrate, a circuit copper layer arranged on the substrate, and a semiconductor power electronic component arranged on the circuit copper layer; the semiconductor power electronic component includes an upper bridge power chipset, a lower bridge power chipset, an electrode probe and a plurality of control electrode resistors; the upper bridge power chipset and the lower bridge power chipset respectively include a plurality of semiconductor power chips connected in parallel, and the semiconductor power chips of the upper bridge power chipset and the lower bridge power chipset are symmetrically arranged.

[0004] Although the chip parallel layout of the above-mentioned MOSFET module reduces the thermal coupling effect of adjacent chips, due to the influence of the parallel arrangement of the chips, the length of the module in the parallel direction is correspondingly increased, which makes the size of the module larger and requires a larger packaging space, increasing the difficulty and cost of packaging. In addition, since the high-power MOSFET module integrates more electronic components internally and the power of the module is relatively large when it is working, the heat generated by the module when it is working is relatively large. In addition to setting the chip parallel layout to avoid heat concentration on adjacent chips, the above-mentioned MOSFET module does not have other heat dissipation cooling structures, so that the module power device can only dissipate heat through the contact surface with the substrate in the form of natural convection and thermal radiation, and the heat dissipation efficiency is relatively low, resulting in serious module temperature accumulation, affecting the normal operation of the module.

[0005] In order to solve the heat dissipation and cooling problem of the module while ensuring the high power processing capability of the module, an integrated MOSFET module and a cooling assembly for high power applications are proposed. Summary of the invention

[0006] The object of the present invention is to provide an integrated MOSFET module and a cooling assembly for high-power applications to solve the problems raised in the above background technology.

[0007] To achieve the above object, one of the objects of the present invention is to provide an integrated MOSFET module for high-power applications, comprising a packaging shell, the packaging shell comprising an upper isolation plate, a middle isolation plate, a lower isolation plate and a circuit structure arranged on the middle isolation plate in parallel from top to bottom, the lower isolation plate being provided with a plurality of connection terminals electrically connected to the circuit structure;

[0008] The circuit structure includes a chipset for energy rectification, conversion and transmission, and a driving component and a protection component connected to the chipset, and the chipset is electrically connected to an external circuit through the driving component;

[0009] The driving component controls the switching operation of the chipset in a high-speed response manner, and the protection component is used to release the electrode charge of the chipset to prevent overvoltage damage.

[0010] As a further improvement of the technical solution, the driving component includes MOS tubes Q1 and Q2.

[0011] The gate of the MOS tube Q1 is connected to the resistor R3 and connected to the positive electrode of the diode D1, the source of the MOS tube Q1 is connected to the resistor R1 and the VCC terminal and connected to the negative electrode of the diode D1, and the drain of the MOS tube Q1 is connected to the Ui terminal and grounded;

[0012] The gate of the MOS tube Q2 is connected to the resistor R2 and connected to the CONTROL terminal, the source of the MOS tube Q2 is connected to the other end of the resistor R2 and grounded, and the drain of the MOS tube Q2 is connected to the other end of the resistor R1 and connected to the other end of the resistor R3.

[0013] As a further improvement of the technical solution, the chipset includes MOS tubes VT3, VT4 and triodes VT1, VT2, Q11, Q12, Q13, Q14, wherein:

[0014] The base of the transistor VT1 is connected to the positive electrode of the diode VD1 and connected to the resistor R11, the resistor R11 is grounded, the cathode of the diode VD1 is connected to the resistor R21, the resistor R21 is connected to the resistors R22, R27, R35, the capacitor C16 and connected to the drain of the MOS tube VT4, the collector of the transistor VT1 is connected to the sliding rheostat VR1, the sliding rheostat VR1 is connected to the transistor VT2, and the emitter of the transistor VT1 is connected to the other end of the resistor R22;

[0015] The transistor VT2 is connected to the resistors R24, R25, R26, R29, R30, the capacitors C11, C12, C14 and are connected to the base of the transistor Q11 and the base of the transistor Q12, the resistor R24 ​​is connected to the resistor R23 and is connected to the Ui terminal, the resistor R26 is connected to the resistors R36, R37 and is connected to the capacitor C17, the capacitor C17 is connected to the resistor R39, the resistors R29 and R30 are connected to the resistor R31, the capacitor C15, the drain of the MOS tube VT3 and are connected to the +V terminal, the capacitors C11, C15, the resistors R23, R25, R39 are all grounded;

[0016] The gate of the MOS tube VT3 is connected to the resistor R32, the resistor R32 is connected to the resistor R33, the capacitor C13, the collector of the transistor Q12, the collector of the transistor Q13 is connected in parallel to the other end of the capacitor C14, and the source of the MOS tube VT3 is connected to the other end of the resistor R36;

[0017] The gate of the MOS tube VT4 is connected to the resistor R38, the resistor R38 is connected to the potentiometer RP1, the emitter of the transistor Q13, the collector of the transistor Q14 and the other end of the capacitor C13, and the source of the MOS tube VT4 is connected to the other end of the resistor R37;

[0018] The emitter of the transistor Q11 and the emitter of the transistor Q12 are both connected to the other end of the resistor R31, and the collector of the transistor Q11 is connected to the resistor R28 and connected to the other end of the capacitor C12;

[0019] The base of the transistor Q13 is connected to the resistor R34 and the other end of the resistor R33, and the resistor R34 is connected to the other end of the potentiometer RP1;

[0020] The collector of the transistor Q14 is connected to the positive electrode of the diode VD2 and connected to the other end of the resistor R28, the cathode of the diode VD2 is connected to the other end of the resistor R27, and the emitter of the transistor Q14 is connected to the other end of the resistor R35.

[0021] As a further improvement of the technical solution, the protection component includes resistors R42, R43, R44, diodes D21, D22, D23 and capacitor C36, wherein:

[0022] One end of the resistor R42 is connected to the cathode of the diode D23 and connected to the BHO terminal, and the other end of the resistor R42 is connected to the resistor R43, the cathode of the diode D21, the anode of the diode D23 and connected to the gate of the power MOS tube of the chipset;

[0023] One end of the resistor R44 is connected to the anode of the diode D21, the anode of the diode D22, and the other end of the resistor R43 is connected in parallel to the source of the power MOS tube of the chipset. The other end of the resistor R44 is connected to the capacitor C36. The capacitor C36 is connected to the cathode of the diode D22 and the VCC end and is connected in parallel to the drain of the power MOS tube of the chipset.

[0024] As a further improvement of the technical solution, the MOS tube Q2 is an N-type MOS tube.

[0025] The second object of the present invention is to provide a cooling assembly for the integrated MOSFET module for high-power applications as described above, comprising a heat dissipation assembly disposed on the middle isolation plate;

[0026] The upper isolation plate and the lower isolation plate are provided with fins for heat dissipation on one side away from the middle isolation plate, the middle isolation plate is provided with a plurality of embedding grooves penetrating the upper and lower surfaces of the middle isolation plate, the embedding grooves are used to install the electronic components of the circuit structure, and one side of the middle isolation plate is provided with an injection port for injecting thermal conductive silicone grease;

[0027] The heat dissipation component includes a fixed shielding plate fixedly arranged at the left and right ends of the middle isolation plate and a movable shielding plate plugged into the front and rear ends of the middle isolation plate, positioning shafts are arranged at both ends of the fixed shielding plate, and a first locking structure for fixing the upper isolation plate and the lower isolation plate is arranged on the positioning shaft. The movable shielding plate is connected with the injection port and a second locking structure for clamping the upper isolation plate and the lower isolation plate is arranged in the middle of the movable shielding plate. The electronic components dissipate heat by directly conducting heat to the middle isolation plate and indirectly conducting heat to the upper isolation plate and the lower isolation plate through the thermal grease on both sides.

[0028] As a further improvement of the present technical solution, the second locking structure includes a guide groove connected to the middle part of the movable shielding plate at one end and a snap-fitting piece slidably connected to the middle part of the movable shielding plate, the other end of the guide groove is connected to the injection port, a flow outlet is provided on the surface of the middle part of the movable shielding plate facing the electronic component, the positioning shaft is a conical structure at one end away from the middle isolation plate, the upper isolation plate and the lower isolation plate are provided with corresponding positioning grooves at the four corners of one side close to the middle isolation plate, and the upper isolation plate and the lower isolation plate are provided with snap-fitting grooves in the middle, the positioning shaft is plugged into the positioning groove, and the upper and lower ends of the snap-fitting piece are respectively snap-fitted with the snap-fitting grooves of the upper isolation plate and the lower isolation plate.

[0029] As a further improvement of the technical solution, an inlet is provided on the surface of the positioning shaft close to the electronic component, a movable cone that moves up and down is provided inside the positioning shaft, a pair of locking blocks are provided in the cone structure of the positioning shaft, and a locking groove is provided in the positioning groove.

[0030] As a further improvement of the technical solution, the contact surface between the locking groove and the locking block is provided with an annular edge, and the bottom end of the locking block is correspondingly provided with a hook edge.

[0031] As a further improvement of the technical solution, the upper isolation plate, the middle isolation plate, the lower isolation plate, the fixed shielding plate, and the movable shielding plate are all made of aluminum nitride.

[0032] Compared with the prior art, the present invention has the following beneficial effects:

[0033] 1. In the integrated MOSFET module and cooling assembly for high-power applications, the driving assembly controls the switching operation of the chipset in a high-speed response manner to reduce electromagnetic interference and conduction loss, and then utilizes the on-and-off process of the chipset's power MOSFET to achieve high efficiency and high power output, ensuring the chipset's high-power energy processing efficiency. During the chipset's operation, the protection assembly can limit the electrode charge of the chipset's power MOS tube to avoid breakdown of the power MOS tube, thereby ensuring that the integrated MOSFET module can operate stably when applied to high-power conditions.

[0034] 2. In the integrated MOSFET module and cooling assembly of this high-power application, the electronic components are in direct contact with the upper isolation plate, and the two sides of the electronic components are in contact with the thermal grease respectively, thereby increasing the heat conduction area. When the circuit is working, the heat generated by the electronic components will be directly transmitted to the upper isolation plate and the lower isolation plate through the upper isolation plate and the thermal grease indirectly. The upper isolation plate, the middle isolation plate, the lower isolation plate, the fixed shielding plate, and the movable shielding plate made of aluminum nitride have excellent electrical insulation and thermal conductivity, and can export and dissipate the heat in time, thereby ensuring the cooling effect of the electronic components. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Figure 1 is a circuit diagram of a driving component of the present invention;

[0036] Figure 2 A circuit diagram of a chipset of the present invention;

[0037] Figure 3 is a circuit diagram of a protection component of the present invention;

[0038] Figure 4 It is a schematic diagram of the overall structure of the present invention;

[0039] Figure 5It is a disassembled diagram of the overall structure of the present invention;

[0040] Figure 6 This is a cross-sectional structural diagram of a middle-layer isolation board of the present invention;

[0041] Figure 7 It is a cross-sectional structural diagram of the upper isolation plate of the present invention;

[0042] Figure 8 It is a schematic diagram of the structure of the lower isolation plate of the present invention;

[0043] Fig. 9 for Figure 7 A schematic diagram of the structure enlargement in the middle;

[0044] Fig.10 It is a schematic diagram of the engagement state of the second locking structure of the present invention;

[0045] Fig.11 The schematic diagram of the cooperation between the positioning shaft and the positioning groove of the present invention is shown in FIG. Figure 1 ;

[0046] Fig.12 The schematic diagram of the cooperation between the positioning shaft and the positioning groove of the present invention is shown in FIG. Figure 2 .

[0047] The meaning of each number in the figure is:

[0048] 1. Encapsulation shell;

[0049] 11a, upper isolation board; 11b, middle isolation board; 11c, lower isolation board;

[0050] 111, injection port; 112, positioning groove; 1121, locking groove; 1122, annular edge; 113, connecting terminal; 114, engaging groove;

[0051] 12. Fixed shielding plate; 121. Positioning shaft; 122. Inlet; 123. Locking block; 124. Movable cone;

[0052] 13. Movable shielding plate; 131. Guide groove; 132. Engaging member; 133. Outlet. DETAILED DESCRIPTION

[0053] The following will be combined with the accompanying drawings in the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0054] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present invention.

[0055] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0056] See also Figure 1 , Figure 2 , Figure 3 As shown, one of the purposes of this embodiment is to provide an integrated MOSFET module for high-power applications, including a packaging shell 1, the packaging shell 1 includes an upper isolation plate 11a, a middle isolation plate 11b, a lower isolation plate 11c and a circuit structure arranged on the middle isolation plate 11b in parallel from top to bottom, the lower isolation plate 11c is provided with a plurality of connection terminals 113 electrically connected to the circuit structure, the circuit structure includes a high-power chipset for energy rectification, conversion and transmission, and a driving component and a protection component connected to the chipset, and the chipset is electrically connected to an external circuit through the driving component;

[0057] The driver component controls the switching operation of the chipset in a high-speed response manner to reduce electromagnetic interference and conduction loss, ensure the high-power energy processing efficiency of the chipset, and protect the components for releasing charge to prevent the chipset from being damaged by overvoltage.

[0058] The driving components include MOS tubes Q1 and Q2.

[0059] The gate of the MOS tube Q1 is connected to the resistor R3 and connected to the positive electrode of the diode D1, the source of the MOS tube Q1 is connected to the resistor R1 and the VCC terminal and connected to the negative electrode of the diode D1, and the drain of the MOS tube Q1 is connected to the Ui terminal and grounded;

[0060] The gate of the MOS tube Q2 is connected to the resistor R2 and connected to the CONTROL terminal, the source of the MOS tube Q2 is connected to the other end of the resistor R2 and connected to the ground, and the drain of the MOS tube Q2 is connected to the other end of the resistor R1 and connected to the other end of the resistor R3.

[0061] The MOS tube Q2 is an N-type MOS tube. The N-type MOS tube has a lower on-resistance and can be applied to a more efficient switching power supply. The N-type MOS tube has a high current carrying capacity and can be applied to the integrated MOSFET module of the high-power application of this embodiment.

[0062] In this component circuit, CONTROL is the control signal of MCU or other controllers. MOS tube Q2 is used to drive level conversion, and then drive the switch of MOS tube Q1. When CONTROL is 0, MOS tube Q2 is turned off, the gate level of MOS tube Q1 is pulled up to VCC, MOS tube Q1 is turned off, and the chipset is shut down; when CONTROL is 1, MOS tube Q2 is turned on, the gate level of MOS tube Q1 is pulled down to 0, and the chipset is turned on to work, thereby realizing the control switch operation of the chipset.

[0063] The chipset includes MOS tubes VT3, VT4 and transistors VT1, VT2, Q11, Q12, Q13, Q14, among which,

[0064] The base of transistor VT1 is connected to the positive electrode of diode VD1 and connected to resistor R11, which is grounded. The cathode of diode VD1 is connected to resistor R21, which is connected to resistors R22, R27, R35, capacitor C16 and connected to the drain of MOS tube VT4. The collector of transistor VT1 is connected to sliding rheostat VR1, which is connected to transistor VT2. The emitter of transistor VT1 is connected to the other end of resistor R22.

[0065] Transistor VT2 is connected to resistors R24, R25, R26, R29, R30, capacitors C11, C12, C14 and connected to the base of transistor Q11 and the base of transistor Q12, resistor R24 ​​is connected to resistor R23 and connected to the Ui terminal, resistor R26 is connected to resistors R36, R37 and connected to capacitor C17, capacitor C17 is connected to resistor R39, resistors R29 and R30 are connected to resistor R31, capacitor C15, MOS tube VT3 drain and connected to +V terminal, capacitors C11, C15, resistors R23, R25, R39 are all grounded;

[0066] The gate of MOS tube VT3 is connected to resistor R32, resistor R32 is connected to resistor R33, capacitor C13, collector of transistor Q12, collector of transistor Q13 and the other end of capacitor C14, and the source of MOS tube VT3 is connected to the other end of resistor R36;

[0067] The gate of MOS tube VT4 is connected to resistor R38, resistor R38 is connected to potentiometer RP1, emitter of transistor Q13, collector of transistor Q14 and the other end of capacitor C13, and the source of MOS tube VT4 is connected to the other end of resistor R37;

[0068] The emitter of transistor Q11 and the emitter of transistor Q12 are both connected to the other end of resistor R31, and the collector of transistor Q11 is connected to resistor R28 and connected to the other end of capacitor C12;

[0069] The base of transistor Q13 is connected to resistor R34 and the other end of resistor R33, and resistor R34 is connected to the other end of potentiometer RP1;

[0070] The collector of transistor Q14 is connected to the positive electrode of diode VD2 and connected to the other end of resistor R28, the negative electrode of diode VD2 is connected to the other end of resistor R27, and the emitter of transistor Q14 is connected to the other end of resistor R35.

[0071] The circuit composed of this chipset is a power MOSFET circuit, which is composed of triodes VT1, VT2 and other transistors to form a cross-current circuit, and MOS tubes VT3, VT4 and other transistors to form a final power amplifier circuit. The bias current is adjusted by potentiometer RP1, and the opening and closing process of the power MOSFET is used to achieve high efficiency and high power output.

[0072] The protection components include resistors R42, R43, R44, diodes D21, D22, D23 and capacitor C36, where:

[0073] One end of the resistor R42 is connected to the cathode of the diode D23 and connected to the BHO terminal, and the other end of the resistor R42 is connected to the resistor R43, the cathode of the diode D21, the anode of the diode D23 and connected to the gate of the power MOS tube (i.e., MOS tube VT3, VT4) of the chipset;

[0074] One end of the resistor R44 is connected to the anode of the diode D21 and the anode of the diode D22, and the other end of the resistor R43 is connected in parallel to the source of the power MOS tube (i.e., MOS tube VT3, VT4) of the chipset. The other end of the resistor R44 is connected to the capacitor C36, and the capacitor C36 is connected to the cathode of the diode D22 and the VCC end is connected in parallel to the drain of the power MOS tube (i.e., MOS tube VT3, VT4) of the chipset.

[0075] In the protection component, the BHO terminal is the output terminal of the power MOS tube. First, by connecting the resistor R42 in series between the gate and the output terminal of the chipset power MOS tube, it can avoid the situation where the surrounding components are broken down due to the excessive switching speed of the MOS tube under high voltage conditions;

[0076] Secondly, since the impedance of the gate and source of the power MOS tube is very high, the voltage mutation between the drain and the source will be coupled to the gate through the inter-electrode capacitance to generate a very high gate-source spike voltage. This voltage will cause the very thin gate-source oxide layer to break down. At the same time, the gate is prone to accumulate charges, which will also cause the gate-source oxide layer to break down. Therefore, a voltage regulator diode D21 is set in parallel with the gate and source of the power MOS tube to limit the gate voltage below the voltage regulator diode voltage value, protecting the power MOS tube from breakdown. In addition, a resistor R43 is connected in parallel with the gate and source of the power MOS tube to release the gate charge and avoid charge accumulation.

[0077] See also Figure 4 , Figure 5 , Figure 6 As shown, the second purpose of this embodiment is to provide a cooling assembly for the integrated MOSFET module for the above-mentioned high-power application, including a heat dissipation assembly arranged on the middle isolation plate 11b;

[0078] The upper isolation plate 11a and the lower isolation plate 11c are provided with fins for heat dissipation on one side away from the middle isolation plate 11b. The middle isolation plate 11b is provided with a plurality of embedded grooves penetrating the upper and lower surfaces of the middle isolation plate 11b. The embedded grooves are used to install electronic components of the circuit structure. An injection port 111 for injecting thermal conductive silicone grease is provided on one side of the middle isolation plate 11b.

[0079] The heat dissipation component includes a fixed shielding plate 12 fixedly arranged at the left and right ends of the middle isolation plate 11b and a movable shielding plate 13 plugged and matched with the front and rear ends of the middle isolation plate 11b. Positioning shafts 121 are arranged at both ends of the fixed shielding plate 12. A first locking structure for fixing the upper isolation plate 11a and the lower isolation plate 11c is arranged on the positioning shaft 121. The movable shielding plate 13 is connected with the injection port 111 and a second locking structure for clamping the upper isolation plate 11a and the lower isolation plate 11c is arranged in the middle of the movable shielding plate 13. When the upper isolation plate 11a, the middle isolation plate 11b and the lower isolation plate 11c are assembled and installed to form the packaging shell 1, the fixed shielding plates 12 at the four corners of the middle isolation plate 11b play a positioning role, and the upper isolation plate 11a, the middle isolation plate 11b and the lower isolation plate 11c are installed in alignment. When the upper isolation plate 11a, the middle isolation plate 11b and the lower isolation plate 11c are installed, the upper and lower ends of the fixed shielding plate 12 and the movable shielding plate 13 are aligned with the surfaces of the upper isolation plate 11a and the lower isolation plate 11c. By plugging and matching, the fixed shielding plate 12 and the movable shielding plate 13 are combined to make the packaging shell 1 a closed structure, and the internal space of the packaging shell 1 is divided into two closed spaces, upper and lower, by the middle isolation plate 11b. When injecting thermal grease, the thermal grease enters the movable shielding plate 13 through the injection port 111 to push the second locking structure to move and clamp the upper isolation plate 11a and the lower isolation plate 11c. After the thermal grease enters from the movable shielding plate 13 and fills the upper and lower closed spaces respectively, the thermal grease pushes the first locking structure to completely fix the upper isolation plate 11a, the middle isolation plate 11b, and the lower isolation plate 11c. In the cooling assembly provided in this embodiment, the electronic components dissipate heat by directly conducting heat to the middle isolation plate 11b and indirectly conducting heat to the upper isolation plate 11a and the lower isolation plate 11c through the thermal grease on both sides. The contact area is increased to improve the heat dissipation efficiency, thereby ensuring the cooling effect of the electronic components.

[0080] The above structure is disclosed as follows:

[0081] like Figure 6 , Figure 7 , Figure 8 , Fig.10As shown, in order to facilitate the alignment installation of the upper isolation plate 11a, the middle isolation plate 11b, and the lower isolation plate 11c, and to prevent the leakage of the thermal grease due to the separation of the upper isolation plate 11a and the lower isolation plate 11c when injecting the thermal grease into the upper and lower closed spaces, the second locking structure includes a guide groove 131 connected to the middle of the movable shielding plate 13 at one end and a clamping member 132 slidably connected to the middle of the movable shielding plate 13, the other end of the guide groove 131 is connected to the injection port 111, and the movable shielding plate 13 is connected to the middle of the movable shielding plate 13. A flow outlet 133 is provided on the surface of the middle part of the dynamic shielding plate 13 facing the electronic components. The end of the positioning shaft 121 away from the middle isolation plate 11b is a cone structure. The upper isolation plate 11a and the lower isolation plate 11c are provided with positioning grooves 112 at four corners close to the middle isolation plate 11b, and the upper isolation plate 11a and the lower isolation plate 11c are provided with a clamping groove 114 in the middle part. The positioning shaft 121 is plugged into the positioning groove 112. The upper and lower ends of the clamping member 132 are respectively connected with the upper isolation plate 11a and the lower isolation plate 11c. The snap-fitting grooves 114 of the lower isolation plate 11c are snap-fitted. When the positioning is installed, the positioning shafts 121 at the four corners of the middle isolation plate 11b are aligned with the positioning grooves 112 opened at the four corners of the upper isolation plate 11a and the lower isolation plate 11c. Due to the cone structure at the end of the positioning shaft 121, the insertion resistance can be reduced by means of the inclined surface when the positioning shaft 121 is inserted into the positioning groove 112, thereby completing the positioning installation of the upper isolation plate 11a, the middle isolation plate 11b, and the lower isolation plate 11c. After forming the upper and lower closed spaces, thermal grease is injected through the injection port 111, and the thermal grease enters the guide groove 131 to push the clamping piece 132 to move, so that the upper and lower ends of the clamping piece 132 are clamped in the clamping groove 114, thereby clamping the upper isolation plate 11a and the lower isolation plate 11c to avoid separation of the upper isolation plate 11a and the lower isolation plate 11c, and after the clamping piece 132 is pushed, the flow outlet 133 is exposed, so that the thermal grease can flow to the upper and lower closed spaces through the flow outlet 133.

[0082] After the thermal conductive silicone grease is filled into the upper and lower closed spaces, the upper isolation plate 11a, the middle isolation plate 11b, and the lower isolation plate 11c need to be completely fixed to ensure the overall structural stability of the packaging shell 1. Figure 6 , Fig. 9 , Fig.11 , Fig.12As shown, the surface of the positioning shaft 121 close to the electronic component is provided with an inlet 122, a movable cone 124 that moves up and down is provided in the positioning shaft 121, a pair of locking blocks 123 are provided in the cone structure of the positioning shaft 121, and a locking groove 1121 is provided in the positioning groove 112. After the thermal conductive silicone grease filling of the upper and lower closed spaces is completed, the thermal conductive silicone grease is continuously injected, so that the thermal conductive silicone grease enters the positioning shaft 121 through the inlet 122 and pushes the movable cone 124 to move, so that the movable cone 124 pushes the locking block 123 out of the cone structure of the positioning shaft 121, and the movable cone 124 is stuck in the locking groove 1121. Thereby, the upper isolation plate 11a, the middle isolation plate 11b and the lower isolation plate 11c are completely fixed. Furthermore, the contact surface between the locking groove 1121 and the locking block 123 is provided with an annular edge 1122, and the bottom end of the locking block 123 is correspondingly provided with a hook edge. When the movable cone 124 pushes the locking block 123 to move, the hook edge of the locking block 123 will cross the annular edge 1122 and engage with the annular edge 1122, so that the locking block 123 cannot be separated from the locking groove 1121 and retracted into the positioning shaft 121, thereby ensuring the fixing effect of the upper isolation plate 11a, the middle isolation plate 11b and the lower isolation plate 11c.

[0083] In the cooling assembly provided in this embodiment, the upper isolation plate 11a, the middle isolation plate 11b, the lower isolation plate 11c, the fixed shielding plate 12, and the movable shielding plate 13 are all made of aluminum nitride. The electronic components are directly in contact with the upper isolation plate 11a, and the two sides of the electronic components are respectively in contact with the thermal grease, thereby increasing the heat conduction area. When the circuit is working, the heat generated by the electronic components will be directly transmitted to the upper isolation plate 11a and the lower isolation plate 11c through the upper isolation plate 11a and the thermal grease. The upper isolation plate 11a, the middle isolation plate 11b, the lower isolation plate 11c, the fixed shielding plate 12, and the movable shielding plate 13 made of aluminum nitride have excellent electrical insulation and thermal conductivity, and can export and dissipate heat in time, thereby ensuring the cooling effect of the electronic components.

[0084] The above shows and describes the basic principles, main features and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited by the above embodiments. The above embodiments and descriptions are only preferred examples of the present invention and are not intended to limit the present invention. Without departing from the spirit and scope of the present invention, the present invention may have various changes and improvements, which fall within the scope of the present invention. The scope of protection of the present invention is defined by the attached claims and their equivalents.

Claims

1. An integrated MOSFET module for high power applications, characterized in that: The packaging shell (1) comprises an upper isolation plate (11a), a middle isolation plate (11b), a lower isolation plate (11c) arranged in parallel from top to bottom, and a circuit structure arranged on the middle isolation plate (11b), wherein the lower isolation plate (11c) is provided with a plurality of connection terminals (113) electrically connected to the circuit structure; The circuit structure includes a chipset for energy rectification, conversion and transmission, and a driving component and a protection component connected to the chipset, and the chipset is electrically connected to an external circuit through the driving component; The driving component controls the switching operation of the chipset in a high-speed response manner, and the protection component is used to release the electrode charge of the chipset to prevent overvoltage damage; The driving component includes MOS tubes Q1 and Q2. The gate of the MOS tube Q1 is connected to the resistor R3 and connected to the positive electrode of the diode D1, the source of the MOS tube Q1 is connected to the resistor R1 and the VCC terminal and connected to the negative electrode of the diode D1, and the drain of the MOS tube Q1 is connected to the Ui terminal and grounded; The gate of the MOS transistor Q2 is connected to the resistor R2 and connected to the CONTROL terminal, the source of the MOS transistor Q2 is connected to the other end of the resistor R2 and grounded, and the drain of the MOS transistor Q2 is connected to the other end of the resistor R1 and connected to the other end of the resistor R3; The MOS tube Q2 is an N-type MOS tube.

2. The integrated MOSFET module for high-power applications according to claim 1, characterized in that: The chipset includes MOS tubes VT3, VT4 and transistors VT1, VT2, Q11, Q12, Q13, Q14, wherein: The base of the transistor VT1 is connected to the positive electrode of the diode VD1 and connected to the resistor R11, the resistor R11 is grounded, the cathode of the diode VD1 is connected to the resistor R21, the resistor R21 is connected to the resistors R22, R27, R35, the capacitor C16 and connected to the drain of the MOS tube VT4, the collector of the transistor VT1 is connected to the sliding rheostat VR1, the sliding rheostat VR1 is connected to the transistor VT2, and the emitter of the transistor VT1 is connected to the other end of the resistor R22; The transistor VT2 is connected to the resistors R24, R25, R26, R29, R30, the capacitors C11, C12, C14 and are connected to the base of the transistor Q11 and the base of the transistor Q12, the resistor R24 ​​is connected to the resistor R23 and is connected to the Ui terminal, the resistor R26 is connected to the resistors R36, R37 and is connected to the capacitor C17, the capacitor C17 is connected to the resistor R39, the resistors R29 and R30 are connected to the resistor R31, the capacitor C15, the drain of the MOS tube VT3 and are connected to the +V terminal, the capacitors C11, C15, the resistors R23, R25, R39 are all grounded; The gate of the MOS tube VT3 is connected to the resistor R32, the resistor R32 is connected to the resistor R33, the capacitor C13, the collector of the transistor Q12, the collector of the transistor Q13 is connected in parallel to the other end of the capacitor C14, and the source of the MOS tube VT3 is connected to the other end of the resistor R36; The gate of the MOS tube VT4 is connected to the resistor R38, the resistor R38 is connected to the potentiometer RP1, the emitter of the transistor Q13, the collector of the transistor Q14 and the other end of the capacitor C13, and the source of the MOS tube VT4 is connected to the other end of the resistor R37; The emitter of the transistor Q11 and the emitter of the transistor Q12 are both connected to the other end of the resistor R31, and the collector of the transistor Q11 is connected to the resistor R28 and connected to the other end of the capacitor C12; The base of the transistor Q13 is connected to the resistor R34 and the other end of the resistor R33, and the resistor R34 is connected to the other end of the potentiometer RP1; The collector of the transistor Q14 is connected to the positive electrode of the diode VD2 and connected to the other end of the resistor R28, the cathode of the diode VD2 is connected to the other end of the resistor R27, and the emitter of the transistor Q14 is connected to the other end of the resistor R35.

3. The integrated MOSFET module for high-power applications according to claim 1, characterized in that: The protection component includes resistors R42, R43, R44, diodes D21, D22, D23 and capacitor C36, wherein: One end of the resistor R42 is connected to the cathode of the diode D23 and connected to the BHO terminal, and the other end of the resistor R42 is connected to the resistor R43, the cathode of the diode D21, the anode of the diode D23 and connected to the gate of the power MOS tube of the chipset; One end of the resistor R44 is connected to the anode of the diode D21, the anode of the diode D22, and the other end of the resistor R43 is connected in parallel to the source of the power MOS tube of the chipset. The other end of the resistor R44 is connected to the capacitor C36. The capacitor C36 is connected to the cathode of the diode D22 and the VCC end and is connected in parallel to the drain of the power MOS tube of the chipset.

4. A cooling assembly for an integrated MOSFET module for high power applications according to any one of claims 1 to 3, characterized in that: It comprises a heat dissipation component arranged on the middle isolation plate (11b); The upper isolation plate (11a) and the lower isolation plate (11c) are provided with fins for heat dissipation on one side away from the middle isolation plate (11b); the middle isolation plate (11b) is provided with a plurality of embedding grooves penetrating the upper and lower surfaces of the middle isolation plate (11b); the embedding grooves are used to install electronic components of the circuit structure; and one side of the middle isolation plate (11b) is provided with an injection port (111) for injecting thermal conductive silicone grease; The heat dissipation component comprises a fixed shielding plate (12) fixedly arranged at the left and right ends of the middle isolation plate (11b) and a movable shielding plate (13) plugged into and matched with the front and rear ends of the middle isolation plate (11b); positioning shafts (121) are arranged at both ends of the fixed shielding plate (12); a first locking structure for fixing the upper isolation plate (11a) and the lower isolation plate (11c) is arranged on the positioning shaft (121); the movable shielding plate (13) is connected to the injection port (111) and a second locking structure for clamping the upper isolation plate (11a) and the lower isolation plate (11c) is arranged in the middle of the movable shielding plate (13); the electronic components dissipate heat by directly conducting heat to the middle isolation plate (11b) and indirectly conducting heat to the upper isolation plate (11a) and the lower isolation plate (11c) through the thermal grease on both sides.

5. The cooling assembly for an integrated MOSFET module for high power applications according to claim 4, characterized in that: The second locking structure comprises a guide groove (131) having one end connected to the middle of the movable shielding plate (13) and a snap-fitting member (132) slidably connected to the middle of the movable shielding plate (13); the other end of the guide groove (131) is connected to the injection port (111); a flow outlet (133) is provided on the surface of the middle of the movable shielding plate (13) facing the electronic component; the end of the positioning shaft (121) away from the middle isolation plate (11b) is a cone structure; the upper isolation plate (11b) is a plurality of holes formed on the middle of the movable shielding plate (11c); and the plurality of holes formed on the middle of the movable shielding plate (11d) are provided with a plurality of holes formed on the middle of the movable shielding plate (11c). 1a), the lower isolation plate (11c) has corresponding positioning grooves (112) at four corners of one side close to the middle isolation plate (11b), and the upper isolation plate (11a) and the lower isolation plate (11c) have locking grooves (114) in the middle, the positioning shaft (121) is plugged into the positioning groove (112), and the upper and lower ends of the locking member (132) are respectively locked into the locking grooves (114) of the upper isolation plate (11a) and the lower isolation plate (11c).

6. The cooling assembly for an integrated MOSFET module for high power applications according to claim 5, characterized in that: The surface of the positioning shaft (121) close to the electronic component is provided with an inflow port (122), a movable cone (124) that moves up and down is provided in the positioning shaft (121), a pair of locking blocks (123) are provided in the cone structure of the positioning shaft (121), and a locking groove (1121) is provided in the positioning groove (112).

7. The cooling assembly for an integrated MOSFET module for high power applications according to claim 6, characterized in that: The contact surface between the locking groove (1121) and the locking block (123) is provided with an annular edge (1122), and the bottom end of the locking block (123) is correspondingly provided with a hook edge.

8. The cooling assembly for an integrated MOSFET module for high power applications according to claim 4, characterized in that: The upper isolation plate (11a), the middle isolation plate (11b), the lower isolation plate (11c), the fixed shielding plate (12), and the movable shielding plate (13) are all made of aluminum nitride.

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