Bidirectional transient voltage suppression (TVS) diode adopting DFN1006 side tin-climbing packaging technology

Abstract

The invention relates to a bidirectional transient voltage suppression (TVS) diode adopting a DFN1006 side surface tin-climbing packaging technology, which is characterized in that: 1, after the side surface tin-climbing packaging technology is used, wettability (wettability) of a bonding pad is improved, welding defects are reduced, welding strength is enhanced, and heat dissipation performance is improved by DFN1006 packaging, so that welding quality and connection reliability are greatly improved; and the parasitic capacitance introduced by assembly is correspondingly reduced. The side surface structure is shown in the figure 1 of the abstract, is led out from the figure 2 of the bottom bonding pad, and is laterally exposed on the side surface of the plastic package body in the figure 1. 2, after the side surface tin-climbing packaging technology is used, the side surface tin-climbing packaging technology can be detected by AOI detection equipment in high-end manufacturing, so that the assembly reliability is further improved; and 3, a high-end customized chip is used in the device, so that the junction capacitance of the device is very low (0.15 pF), and the device is very suitable for electrostatic surge protection of a high-frequency circuit.

Description

Technical Field

[0001] The present invention relates to a packaging structure in which the side pins of a plastic package body have a side tin creeping performance, and the pins of the packaging structure have a side tin creeping performance, belonging to the technical field of semiconductor packaging. Specifically, it is a bidirectional transient voltage suppression (TVS) diode designed for protecting voltage-sensitive high-speed data lines and adopting DFN1006 side tin creeping packaging technology. Background Art

[0002] With the rapid development of electronic devices, especially the widespread application of high-speed data transmission interfaces (such as Fast Ethnet, DisplayPorts, PCI Express, Serial SATA, Type-C, USB, MIDI, etc.), higher requirements are placed on the package size, response speed and electrostatic discharge (ESD) protection capabilities of electronic components. The traditional TVS diode packaging method can no longer meet the needs of modern electronic devices and the needs of high assembly reliability and detectability in terms of size, capacitance value and ESD protection capabilities. Therefore, it is very important to obtain good welding reliability in the semiconductor industry. The tin layer on the semiconductor welding surface can make the welding more secure, especially for automotive electronics. Summary of the invention

[0003] Side creep tin packaging structure: The TVS diode of the present invention adopts DFN1006U package with a size of 1.0×0.6×0.5mm. The side creep tin technology (SWF) is used to achieve a tighter package connection, effectively reducing the package volume. On the basis of DFN1006 package, pins that can be tinned and soaked by solder are added on the side. The appearance is as shown in the attached figure. Figure 1 After the PCBA is assembled, this pin will form tin creeping adhesion with the PCB. Figure 2 The welding condition can be detected by AOI. The invention of the side creep tin packaging structure provides sufficient and necessary conditions to ensure the high reliability of welding quality of conventional DFN1006 packaging.

[0004] Ultra-low capacitance: The TVS diode of the present invention has an ultra-low capacitance characteristic, with a typical value of 0.15pF, which helps to reduce signal attenuation and maintain the signal integrity of high-speed data lines. BRIEF DESCRIPTION OF THE DRAWINGS

[0005] Figure 1 This is the appearance diagram of the side tin-climbing package, where Metal solder pad protruding from the side of the package 1 Conventional semiconductor DFN1006 package plastic package 2 Bottom pad 3 Internal frame cutting section 4

[0006] Figure 2 The cross-sectional view of the completed PCBA, where Metal pad with protruding side 1 Solder after welding (tin creep) 2 DFN1006 plastic package 3 Bottom pad 4 PCB circuit board 5

[0007] The electrical test results of the TVS diode after the design are as follows: Figure 3 This is a diagram of the diode electrical specification parameters (WPE0501 DP1 ∪), where 1 is the electrical parameter table; 2 is the ultra-low junction capacitance (0.12pF).

Claims

1. The purpose of the present invention is to provide a bidirectional transient voltage suppression (TVS) diode using DFN1006 side creep tin packaging technology (hereinafter referred to as "TVS diode of the present invention"), so as to solve the problems of poor installation welding quality and reliability, inability to be detected by AOI optical inspection after welding assembly, and large parasitic capacitance value in the production and application process of DFN1006 packaging of TVS diodes in the prior art.

2. Features of the TVS diode technical solution of the present invention in terms of packaging structure: The TVS diode of the present invention adopts DFN1006U package with a size of 1.0×0.6×0.5mm. It realizes a tighter packaging connection through side creep tin technology (SWF), effectively reduces the packaging volume, and is suitable for application scenarios with limited space.

3. Advantages of ultra-low junction capacitance of the TVS diode technical solution of the present invention: The TVS diode of the present invention has ultra-low capacitance characteristics, with a typical value of 0.15pF, which helps to reduce signal attenuation and maintain the signal integrity of high-speed data lines.

4. The TVS diode of the present invention has high-efficiency ESD protection: the TVS diode complies with the IEC 61000-4-2 (ESD) standard, can withstand ±30kV air discharge and ±16kV contact discharge, and provides reliable electrostatic protection for high-speed data lines.

5. The TVS diode of the present invention has high electrical performance parameters: low reverse leakage current (nA level), low clamping voltage and high reverse operating voltage (5V), meeting the voltage protection requirements in various application scenarios.

6. Application scope of the invented TVS diode: It is widely used in voltage protection in the fields of automotive electronics, mobile phones, medical equipment, high-speed data transmission equipment, etc., and can effectively protect circuits from electrostatic discharge and overvoltage damage.

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