Busbar assembly, power semiconductor module, electronic device, and vehicle

Abstract

The invention discloses a busbar assembly, a power semiconductor module, electronic equipment and a vehicle, the busbar assembly is used for a power semiconductor device unit, the power semiconductor device unit comprises a plurality of power semiconductor devices and a driving board, and the busbar assembly is suitable for being arranged between the plurality of power semiconductor devices and the driving board; the busbar assembly comprises a direct current busbar and an alternating current output electrode busbar which are arranged in a laminated mode in the thickness direction of the power semiconductor device unit, and the alternating current output electrode busbar is far away from the drive board. The busbar assembly provided by the invention can reduce the electromagnetic interference of the AC output electrode busbar on the driving board, and improves the anti-interference performance of the power module, thereby ensuring the stable operation of the power module.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a busbar assembly, a power semiconductor module, an electronic device and a vehicle. Background Art

[0002] In the related art, a power semiconductor device unit, such as a half-bridge power unit, is Figure 1 As shown, the AC output busbar 214' is located at the top layer and is close to key circuit components such as the driver board 23'. During the inverter operation, the potential of the AC output busbar may jump back and forth between the DC positive voltage and the DC negative voltage, causing serious electromagnetic interference problems to other components in the system, especially the driver board 23' and other components that are close to it. Summary of the invention

[0003] The present invention aims to solve at least one of the technical problems existing in the prior art. To this end, one object of the present invention is to provide a busbar assembly, which can reduce the electromagnetic interference of the AC output pole busbar to the driving board, improve the anti-interference performance, and thus ensure the stable operation of the power module.

[0004] A second objective of the present invention is to provide a power semiconductor module.

[0005] The third objective of the present invention is to provide an electronic device.

[0006] A fourth objective of the present invention is to provide a vehicle.

[0007] In order to achieve the above-mentioned purpose, a busbar assembly of an embodiment of the first aspect of the present invention is used for a power semiconductor device unit, which includes a plurality of power semiconductor devices and a driving board, and the busbar assembly is suitable for being arranged between the plurality of power semiconductor devices and the driving board; the busbar assembly includes a DC busbar and an AC output pole busbar stacked along the thickness direction of the power semiconductor device unit, and the AC output pole busbar is far away from the driving board.

[0008] According to the busbar assembly of the embodiment of the present invention, by adopting a layout structure in which the DC busbar and the AC output pole busbar are stacked in sequence from top to bottom along the thickness direction, the AC output pole busbar is away from the driving board, and when the power semiconductor device is working, the AC output pole busbar can be affected by the electromagnetic shielding effect from the DC busbar above, thereby effectively limiting the electromagnetic interference of the potential jump of the AC output pole busbar to other key components, especially the driving board that is relatively close, thereby improving the anti-interference performance of the power semiconductor device unit, thereby ensuring stable operation of the unit.

[0009] In some embodiments, the DC busbar includes a DC positive busbar and a DC negative busbar stacked in a direction perpendicular to the first direction; the DC positive busbar is close to the driving board or the DC negative busbar is close to the driving board.

[0010] In some embodiments, the current direction of the DC positive busbar is opposite to that of the DC negative busbar.

[0011] In some embodiments, the DC positive busbar extends along a first direction and a second direction and leads out a first DC connection terminal from a first side of the power semiconductor device unit, wherein the first direction and the second direction are both perpendicular to the thickness direction of the power semiconductor device unit, and the first direction intersects with the second direction.

[0012] In some embodiments, the DC negative busbar extends along the first direction and the second direction and leads out a second DC connection terminal from a second side of the power semiconductor device unit, wherein the first side and the second side are opposite sides along the second direction.

[0013] In some embodiments, the AC output busbar extends along the first direction and the second direction and leads out a first AC connection terminal from a first side of the power semiconductor device unit, and the AC output busbar leads out a second AC connection terminal from a second side of the power semiconductor device unit.

[0014] In some embodiments, the DC positive busbar leads out a DC positive terminal from the third side or the fourth side of the power semiconductor device unit, and the DC positive terminal is suitable for connecting to the first end of the bus capacitor in the power semiconductor device unit, wherein the third side and the fourth side of the power semiconductor device unit are opposite sides along the first direction.

[0015] In some embodiments, the DC negative busbar leads out a DC negative terminal on the third side or the fourth side of the power semiconductor device unit, the DC negative terminal is suitable for being connected to the second end of the bus capacitor, and the DC negative terminal and the DC positive terminal are located on the same side of the power semiconductor device unit.

[0016] In some embodiments, the AC output busbar leads out an AC terminal on the fourth side or the third side of the power semiconductor device unit, the AC terminal is suitable for connecting to a load, and the AC terminal and the DC positive terminal or the DC negative terminal are located on opposite sides of the power semiconductor device unit.

[0017] In some embodiments, the busbar assembly further includes: a first insulating layer, wherein the first insulating layer is located between the DC positive busbar and the DC negative busbar.

[0018] In some embodiments, the busbar assembly further includes: a second insulating layer, wherein the second insulating layer is located between the DC negative busbar and the AC output busbar.

[0019] In some embodiments, the busbar assembly further includes: a third insulating layer, wherein the third insulating layer is located on the DC positive busbar.

[0020] In some embodiments, the terminals of each busbar and the terminals of the corresponding connected power semiconductor device have a horizontal contact area to be connected by laser welding.

[0021] In order to achieve the above-mentioned purpose, the power semiconductor module of the second embodiment of the present invention comprises: at least one power semiconductor device unit, each of the power semiconductor device units comprises a plurality of power semiconductor devices, a driving board and a busbar assembly as described in the above embodiment.

[0022] According to the power semiconductor module of the embodiment of the present invention, by adopting the busbar assembly described in the above embodiment, the layout structure of the busbar assembly adopts a method in which the DC busbar and the AC output pole busbar are stacked in sequence from top to bottom along the thickness direction. The AC output pole busbar is far away from the driving board, and when the power semiconductor device is working, the AC output pole busbar can be affected by the electromagnetic shielding effect from the DC busbar above, which effectively limits the electromagnetic interference of the potential jump of the AC output pole busbar to other key circuit components, especially the driving board that is close, thereby improving the anti-interference performance of the power semiconductor device unit, thereby ensuring the stable operation of the unit.

[0023] In some examples, the multiple power semiconductor devices of each of the power semiconductor device units are spaced apart and arranged in an array.

[0024] In some embodiments, the plurality of power semiconductor devices include a plurality of first power semiconductor devices connected in parallel and a plurality of second power semiconductor devices connected in parallel; the plurality of first power semiconductor devices are arranged along a first direction, and the plurality of second power semiconductor devices are arranged along the first direction; the plurality of first power semiconductor devices and the plurality of second power semiconductor devices are arranged correspondingly along a second direction.

[0025] In some embodiments, the terminal of the first power semiconductor device is located on a side of the first power semiconductor device away from the second power semiconductor device in the second direction; the terminal of the second power semiconductor device is located on a side of the second power semiconductor device away from the first power semiconductor device in the second direction.

[0026] In some embodiments, the terminals of the first power semiconductor device include a first drain terminal and a first source terminal; the first drain terminal is connected to the first DC connection terminal of the busbar assembly; and the first source terminal is connected to the first AC connection terminal of the busbar assembly.

[0027] In some embodiments, the terminals of the second power semiconductor device include a second drain terminal and a second source terminal; the second drain terminal is connected to the second AC connection terminal of the busbar assembly; and the second source terminal is connected to the second DC connection terminal of the busbar assembly.

[0028] In some embodiments, the terminal of the first power semiconductor device also includes a first drive terminal, which extends from the side of the busbar assembly along the thickness direction of the power semiconductor device unit and is connected to the drive board; the terminal of the second power semiconductor device also includes a second drive terminal, which extends from the side of the busbar assembly along the thickness direction of the power semiconductor device unit and is connected to the drive board.

[0029] In some embodiments, the lead-out sides of the DC positive terminal and the DC negative terminal of the busbar assembly of the power semiconductor device unit are different from the lead-out sides of the terminals of the first power semiconductor device, and the lead-out sides of the DC positive terminal and the DC negative terminal of the busbar assembly of the power semiconductor device unit are different from the lead-out sides of the terminals of the second power semiconductor device.

[0030] In some embodiments, each of the power semiconductor device units further includes a heat dissipation substrate, and a plurality of the power semiconductor devices are disposed on the heat dissipation substrate.

[0031] In some embodiments, the heat dissipation substrate includes: a substrate; a plurality of bosses, the plurality of bosses are arranged on the first surface of the substrate, the plurality of bosses are arranged corresponding to the plurality of power semiconductor devices, and the power semiconductor devices are located on the bosses; a plurality of heat dissipation columns, the plurality of heat dissipation columns are arranged on the second surface of the substrate, and the second surface of the substrate is opposite to the first surface of the substrate.

[0032] In some embodiments, a heat conducting layer is disposed at the bottom of the power semiconductor device, and the heat conducting layer is connected to the corresponding boss through a sintering process.

[0033] In some embodiments, the at least one power semiconductor device unit includes three power semiconductor device units, and the three power semiconductor device units are arranged along the second direction.

[0034] In order to achieve the above object, an electronic device according to an embodiment of a third aspect of the present invention includes the power semiconductor module described in the above embodiment.

[0035] According to the electronic device of the embodiment of the present invention, by adopting the power semiconductor module described in the above embodiment, the layout structure of the busbar assembly in the power semiconductor module adopts a method in which the DC busbar and the AC output pole busbar are stacked in sequence from top to bottom along the thickness direction of the power semiconductor device unit. The AC output pole busbar is away from the driving board, and when the power semiconductor device is working, the AC output pole busbar can be subjected to the electromagnetic shielding effect from the DC positive busbar and the DC negative busbar above, which effectively limits the electromagnetic interference of the potential jump of the AC output pole busbar to other key circuit components, especially the driving board that is relatively close, and improves the anti-interference performance of the power semiconductor device unit, thereby helping to improve the performance and stability of the electronic equipment and ensure the reliable operation of the unit.

[0036] In order to achieve the above-mentioned object, a vehicle according to an embodiment of the fourth aspect of the present invention includes the electronic device described in the above embodiment.

[0037] The vehicle according to the embodiment of the present invention, by adopting the electronic equipment described in the above embodiment, can reduce the risk of electromagnetic interference, improve the anti-interference performance of the power semiconductor device unit, ensure the reliability and stability of the vehicle's electronic system, and thus improve the overall performance of the vehicle.

[0038] Additional aspects and advantages of the present invention will be given in part in the following description and in part will be obvious from the following description, or will be learned through practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] The above and / or additional aspects and advantages of the present invention will become apparent and easily understood from the description of the embodiments in conjunction with the following drawings, in which:

[0040] Figure 1 is a diagram of the electric field simulation result of the busbar assembly of the prior art;

[0041] Figure 2 is an overall schematic diagram of a power semiconductor device unit according to an embodiment of the present invention;

[0042] Figure 3 is a cross-sectional schematic diagram of a power semiconductor device unit busbar assembly according to an embodiment of the present invention;

[0043] Figure 4 is a connection diagram of a busbar assembly according to an embodiment of the present invention;

[0044] Figure 5 It corresponds to Figure 4 A connection diagram of the busbar assembly from another perspective;

[0045] Figure 6is an equivalent circuit diagram of a half-bridge subunit according to an embodiment of the present invention;

[0046] Figure 7 is an equivalent circuit diagram of a power semiconductor device unit according to an embodiment of the present invention;

[0047] Figure 8 is a diagram of electric field simulation results of a busbar assembly according to an embodiment of the present invention;

[0048] Fig. 9 is a schematic diagram of a layout of power semiconductor devices connected in parallel according to an embodiment of the present invention;

[0049] Fig.10 is a schematic diagram of a layout of four groups of power semiconductor devices connected in parallel according to an embodiment of the present invention;

[0050] Fig.11 is a schematic diagram of the layout of power semiconductor devices in a half-bridge subunit according to an embodiment of the present invention;

[0051] Fig.12 is a schematic diagram of a first power semiconductor device according to an embodiment of the present invention;

[0052] Fig.13 is a schematic diagram of a second power semiconductor device according to an embodiment of the present invention;

[0053] Fig.14 is a schematic diagram of a heat dissipation substrate according to an embodiment of the present invention;

[0054] Fig.15 is a schematic diagram of a heat-conducting layer according to an embodiment of the present invention;

[0055] Fig.16 It is a thermal simulation diagram according to the prior art;

[0056] Fig.17 is a thermal simulation diagram according to an embodiment of the present invention;

[0057] Fig.18 is a schematic diagram of the layout of a three-phase full-bridge power semiconductor device unit according to an embodiment of the present invention;

[0058] Fig.19 is an overall schematic diagram of a three-phase full-bridge integrated power semiconductor device unit according to an embodiment of the present invention;

[0059] Fig. 20 is a block diagram of an electronic device according to an embodiment of the present invention;

[0060] Fig.21 is a block diagram of a vehicle according to one embodiment of the present invention.

[0061] Reference numerals:

[0062] Existing technology:

[0063] Busbar assembly 21';

[0064] A driving board 23'; a first power semiconductor device 220'; a second power semiconductor device 230'; a DC positive busbar 210'; a DC negative busbar 212'; and an AC output busbar 214'.

[0065] This application:

[0066] Vehicle 100;

[0067] Electronic equipment 1;

[0068] A power semiconductor module 10;

[0069] U-phase half-bridge power semiconductor device unit 20; V-phase half-bridge power semiconductor device unit 30; W-phase half-bridge power semiconductor device unit 40; upper bridge structure 50; lower bridge structure 60; half-bridge sub-unit 70;

[0070] Busbar assembly 21; drive board 23; busbar capacitor 24; heat dissipation substrate 25; load 26;

[0071] DC positive busbar 210; DC positive terminal 211; DC negative busbar 212; DC negative terminal 213; AC output busbar 214; AC terminal 215; third insulating layer 216; first insulating layer 217; second insulating layer 218; first power semiconductor device 220; second power semiconductor device 230; heat conducting layer 240;

[0072] first drain terminal 221 ; first source terminal 222 ; first drive terminal 223 ; first drive source terminal 224 ; first drive gate terminal 225 ; second drain terminal 231 ; second source terminal 232 ; second drive terminal 233 ; second drive source terminal 234 ; second drive gate terminal 235 ; substrate 251 ; boss 252 ; heat dissipation column 253 . DETAILED DESCRIPTION

[0073] Embodiments of the present invention are described in detail below. The embodiments described with reference to the accompanying drawings are exemplary. Embodiments of the present invention are described in detail below.

[0074] Reference below Figure 2-Figure 5 A busbar assembly according to an embodiment of the present invention is described.

[0075] Figure 2 is an overall schematic diagram of a power semiconductor device unit according to an embodiment of the present invention, Figure 3is a cross-sectional schematic diagram of a power semiconductor device unit busbar assembly according to an embodiment of the present invention, Figure 4 is a connection diagram of a busbar assembly according to an embodiment of the present invention, Figure 5 It corresponds to Figure 4 A connection diagram of the busbar assembly from another perspective.

[0076] like Figure 2-Figure 5 As shown, the busbar assembly 21 can be used for a power semiconductor device unit, wherein the power semiconductor device unit may include multiple power semiconductor devices and a driving board 23, and the busbar assembly 21 includes a DC busbar and an AC output busbar stacked along the thickness direction of the power semiconductor device unit, and the AC output pole busbar is far away from the driving board.

[0077] According to the busbar assembly 21 of the embodiment of the present invention, by adopting a layout structure in which the DC busbar and the AC output pole busbar are stacked in sequence from top to bottom along the thickness direction, the AC output pole busbar is away from the driving board, and when the power semiconductor device is working, the AC output pole busbar can be affected by the electromagnetic shielding effect from the DC busbar above, which effectively limits the electromagnetic interference of the potential jump of the AC output pole busbar to other key components, especially the driving board that is relatively close, thereby improving the anti-interference performance of the power semiconductor device unit, thereby ensuring the stable operation of the unit.

[0078] Further, in an embodiment, the DC busbar includes a DC positive busbar and a DC negative busbar stacked along the thickness direction of the power semiconductor device unit, and the DC positive busbar is close to the driving board or the DC negative busbar is close to the driving board. That is, the DC positive busbar and the DC negative busbar can be interchanged, but the AC busbar needs to be located at the bottom layer, that is, away from the driving board.

[0079] For example, Figure 2 As shown, a DC positive busbar 210 , a DC negative busbar 212 and an AC output busbar 214 are stacked in sequence from top to bottom, wherein the DC positive busbar 210 is close to the driving board 23 , and the AC output busbar 214 is far away from the driving board 23 .

[0080] In some embodiments, the driver board 23 may refer to a circuit board or module for controlling and driving the operation of the power semiconductor device unit. The driver board 23 generally includes electronic components and circuits for providing the required control signals to ensure the normal operation of the power semiconductor device unit. The driver board 23 may be an important part of the power electronic device, used to control and manage the switching operation of the power semiconductor device to realize the function of the circuit.

[0081] In some embodiments, the busbar assembly 21 may refer to a modular electrical component, which is usually made of conductive materials, such as copper, aluminum, etc., and can be used to connect power semiconductor device units. The main functions of the busbar assembly 21 include distributing current and providing voltage connection. The DC positive busbar 210 may be a level in the busbar assembly 21, which is used to connect the positive terminal in the power semiconductor device unit. This part is designed to provide the DC positive voltage required by the circuit. The DC negative busbar 212 may be used to connect the negative terminal in the power semiconductor device unit. This part is designed to provide the DC negative voltage required by the circuit. The AC output busbar 214 is located below the DC positive busbar 210 and the DC negative busbar 212, and is usually located at the bottom layer of the busbar assembly 21. It can be used to connect the AC connection terminals in the power semiconductor device unit and transmit electrical energy to the external load 26.

[0082] In some embodiments, since the AC output pole busbar 214 is located at the bottom layer of the busbar assembly 21, the AC output pole busbar 214 can be shielded by the electromagnetic shielding effect of the DC positive pole busbar 210 and the DC negative pole busbar 212 to reduce the impact range of electromagnetic interference on components such as the drive board 23. At the same time, the DC positive pole busbar 210 and the DC negative pole busbar 212 are located in adjacent layers, so that the distance between the positive and negative pole busbars is small. This arrangement helps to enhance the mutual inductance cancellation effect, thereby reducing the commutation inductance and improving system performance.

[0083] According to the busbar assembly 21 of the embodiment of the present invention, by adopting a layout structure in which the DC busbar and the AC output pole busbar 214 are arranged along the thickness direction and the AC output pole busbar is located in the lower layer, the AC output pole busbar 214 is away from the driving board 23, and when the power semiconductor device is working, the AC output pole busbar 214 can be affected by the electromagnetic shielding effect from the DC busbar above, which effectively limits the electromagnetic interference of the potential jump of the AC output pole busbar to other key circuit components, especially the driving board 23 that is relatively close, thereby improving the anti-interference performance of the power semiconductor device unit, thereby ensuring stable operation of the unit.

[0084] In some embodiments, the power semiconductor device unit includes multiple first power semiconductor devices 220, which can be semiconductor devices for current control, voltage regulation and power amplification, such as MOSFET (metal oxide semiconductor field effect transistor), IGBT (insulated gate bipolar transistor), etc.

[0085] like Figure 4 As shown, the DC positive busbar 210 extends along the first direction and the second direction and leads out a first DC connection terminal from a first side of the power semiconductor device unit.

[0086] The first direction and the second direction are both perpendicular to the thickness direction of the power semiconductor device unit, and the first direction intersects with the second direction. For example, the first direction may be the length direction of the power semiconductor device unit, and the second direction may be the width direction of the power semiconductor device unit.

[0087] The first DC connection terminal is adapted to be connected to the first drain terminal 221 of the first power semiconductor device 220. The first drain terminal 221 may refer to a specific terminal in the first power semiconductor device 220, which is used to connect to the DC positive busbar 210 so that current can flow from the DC positive busbar 210 to the drain portion of the first power semiconductor device 220 in the power semiconductor device unit. This connection facilitates the operation of the circuit and power transmission.

[0088] In some embodiments, Figure 5 As shown, the power semiconductor device unit includes not only a first power semiconductor device 220, but also a plurality of second power semiconductor devices 230. These second power semiconductor devices 230 are generally of the same type as the first power semiconductor device 220, and are used for controlling current, regulating voltage, and power amplification. In addition, the first power semiconductor device 220 and the second power semiconductor device 230 can cooperate with each other to form a half-bridge subunit 70 of a power semiconductor device. This half-bridge subunit 70 can be used to implement specific power electronic control tasks, such as inversion, voltage or current amplification, etc.

[0089] like Figure 5 As shown, the DC negative busbar 212 extends along the first direction and the second direction and leads out a second DC connection terminal on the second side of the power semiconductor device unit, wherein the first side and the second side are opposite sides along the second direction (e.g., the width direction). The second DC connection terminal is suitable for connecting to the second source terminal 232 of the second power semiconductor device 230. The second source terminal 232 may refer to a specific terminal in the second power semiconductor device 230, which is used to connect to the DC negative busbar 212 so that current can flow from the DC negative busbar 212 to the source portion of the second power semiconductor device 230 in the power semiconductor device unit. This connection facilitates the operation of the circuit and power transmission.

[0090] In some embodiments, Figure 4As shown, the AC output pole busbar 214 extends along the first direction and the second direction and leads out the first AC connection terminal on the first side of the power semiconductor device unit, and the AC output pole busbar 214 leads out the second AC connection terminal on the second side of the power semiconductor device unit. Among them, the first AC connection terminal is suitable for connecting to the first source terminal 222 of the first power semiconductor device 220. This connection method helps to guide the output current from the first power semiconductor device 220 to the AC output pole busbar 214, and then transmit it to the external load 26 or other circuit parts. The second AC connection terminal is suitable for connecting to the second drain terminal 231 of the second power semiconductor device 230. This connection method allows the output current to be guided from the second power semiconductor device 230 to the AC output pole busbar 214, and then transmitted to the external load 26 or other circuit parts.

[0091] Therefore, the structure and connection mode of the AC output pole busbar 214 help to achieve normal operation and current transmission of the power semiconductor device unit. This layout and connection mode can be adjusted and optimized according to specific application requirements and device types to meet the requirements of different electronic devices. This helps to improve the reliability and performance of the circuit.

[0092] In some embodiments, Figure 2 As shown, the DC positive busbar 210 leads out a DC positive terminal 211 on the third side or the fourth side of the power semiconductor device unit, and the DC positive terminal 211 is suitable for connecting to the first end of the bus capacitor 24 in the power semiconductor device unit. The DC negative busbar 212 leads out a DC negative terminal 213 on the third side or the fourth side of the power semiconductor device unit, and the DC negative terminal 213 is suitable for connecting to the second end of the bus capacitor 24. The third side and the fourth side of the power semiconductor device unit are opposite sides along the first direction (e.g., the length direction). Both sides can be used to connect circuit elements and make electrical connections.

[0093] In some embodiments, the bus capacitor 24 may be an electronic component for storing charge and stabilizing voltage to ensure stable operation of the circuit. Therefore, the connection between the DC positive busbar 210, the DC negative busbar 212 and the bus capacitor 24 helps to store charge in the circuit and provide a stable power supply voltage for the electronic device.

[0094] In some embodiments, the DC negative terminal 213 and the DC positive terminal 211 are located on the same side of the power semiconductor device unit. This arrangement can reduce the overall size of the assembly, which is very helpful for the compactness and high-density layout of electronic equipment, especially for space-constrained applications such as power modules or inverters. In addition, the DC negative busbar 212 and the DC positive busbar 210 located on the same side can more easily connect the DC power supply and other circuit elements, simplify the layout design of the circuit, reduce the connection lines with longer distances, help reduce the complexity of the circuit, and reduce potential failure points. In addition, since the DC negative terminal 213 and the DC positive terminal 211 are located on the same side, the current path between them is shorter, reducing the current circulation path, helping to reduce electromagnetic interference and mutual inductance effects, and improving the anti-interference performance of the circuit.

[0095] like Figure 2 As shown, the AC output pole busbar 214 leads to an AC terminal 215 on the fourth side or the third side of the power semiconductor device unit, and the AC terminal 215 is suitable for connecting to a load 26, such as a motor, a lighting device, or other equipment requiring an AC power supply. The load 26 connected to the AC terminal 215 can receive AC power from the power semiconductor device unit. The AC terminal 215 is located on the opposite side of the device from the DC positive terminal 211 or the DC negative terminal 213. This means that they are located on different sides of the busbar assembly 21. This design can help isolate the DC and AC circuits, thereby reducing electromagnetic interference between DC and AC, and ensuring the stability and reliability of the circuit.

[0096] In some embodiments, Figure 3-Figure 5 As shown, the busbar assembly 21 further includes a first insulating layer 217, and the first insulating layer 217 is located between the DC positive busbar 210 and the DC negative busbar 212. The function of the first insulating layer 217 can be to provide electrical isolation and insulation protection between the DC positive busbar 210 and the DC negative busbar 212 to prevent current short circuit or circuit failure.

[0097] In addition, the busbar assembly 21 further includes a second insulating layer 218, which is located between the DC negative busbar 212 and the AC output busbar 214. The second insulating layer 218 can provide electrical isolation and insulation protection between the DC negative busbar 212 and the AC output busbar 214 to prevent current short circuit or circuit failure.

[0098] In addition, the busbar assembly 21 also includes a third insulating layer 216, which is located above the DC positive busbar 210. The function of the third insulating layer 216 can be to provide additional electrical isolation between the DC positive busbar 210 and other parts. This helps to ensure that the current of the DC positive busbar 210 does not affect other components or structures located above. The first insulating layer 217, the second insulating layer 218, and the third insulating layer 216 can also provide physical protection for electronic components. It can reduce the risk of dust, pollutants, or foreign objects entering the busbar assembly 21 and affecting circuit performance.

[0099] In some embodiments, the first insulating layer 217, the second insulating layer 218, and the third insulating layer 216 may be made of different insulating materials, such as insulating plastic or insulating resin, glass fiber, etc. The material selection of the insulating layer can be determined according to the specific application and environmental requirements. Different insulating materials have different electrical and mechanical properties, so it is necessary to select a material suitable for a specific application, which is not specifically limited here.

[0100] In some embodiments, the first insulating layer 217, the second insulating layer 218, and the third insulating layer 216 are usually flat to ensure effective electrical isolation. Their thickness and size need to be determined according to design requirements and are not specifically limited here.

[0101] In some embodiments, the main body of the busbar assembly 21 does not need to have holes, and the integrity of the flow path can be maintained, which helps to reduce resistance and improve current transmission efficiency, and reduce process complexity. The connection between the terminal of each busbar and the terminal of the corresponding connected transistor is uniform in thickness and has a certain horizontal contact area, and there is no obstruction above, which is convenient for connection using laser welding. Laser welding can be a high-precision connection method suitable for precise connection of small electronic components. Through laser welding, connection under local high temperature can be achieved to ensure the firmness of the connection point without affecting other parts.

[0102] Specifically, during the laser welding process, the laser beam is focused on the contact points of the busbar terminals and the transistor terminals to generate high temperatures to fuse them together. Since they have sufficient horizontal contact area, this can ensure the stability and reliability of the welding connection while reducing the resistance in the connection. This design can be used to connect the busbar assembly 21 and the transistor in the power semiconductor device unit to ensure the high performance and stability of the circuit.

[0103] Figure 6 is an equivalent circuit diagram of a half-bridge subunit according to an embodiment of the present invention, which is used to describe the circuit behavior of the half-bridge subunit 70 during the switching process. Figure 6 As shown, arrows indicate the commutation loop of the half-bridge subunit 70 during the switching process. Figure 7 is an equivalent circuit diagram of a power semiconductor device unit according to an embodiment of the present invention, such as Figure 7 As shown, the DC positive busbar 210 is connected to the drain of the first power semiconductor device 220 in each half-bridge sub-unit 70 in sequence, and the DC negative busbar 212 is connected to the source of the second power semiconductor device 230 in each half-bridge sub-unit 70 in sequence, and the half-bridge sub-units 70 are connected in parallel in a "serial" manner to form an overall structure of the power semiconductor device unit.

[0104] like Figure 7 As shown in the figure, during the switching process, the current directions of the DC positive busbar 210 and the DC negative busbar 212 are opposite, which can reduce the parasitic inductance introduced by the busbar, thereby improving the dynamic uneven current effect of different power semiconductor devices during the switching process. Specifically, the DC positive busbar 210 and the DC negative busbar 212 are located above the busbar assembly 21, and they are respectively connected to the DC positive terminal 211 and the DC negative terminal 213 in the power semiconductor device unit. The current directions of the two are opposite, so Figure 7 The direction is the reference, that is, the current of the positive busbar flows from left to right, while the current of the negative busbar flows from right to left. This opposite current direction can make their mutual inductance cancel each other, thereby reducing the parasitic inductance introduced by the busbar.

[0105] In addition, in a switching circuit, the current may change during the switching process, which may easily lead to uneven current in different parts. By designing the current directions in the DC positive busbar 210 and the DC negative busbar 212 to be opposite, the current unevenness between different power semiconductor devices can be reduced, and the dynamic response and stability of the circuit can be improved.

[0106] Figure 8 is a diagram of the electric field simulation result of a busbar assembly according to an embodiment of the present invention, Figure 8 The electric field line distribution in the mutual capacitance simulation between the AC output busbar 214 and the rest is shown. During the inverter operation of the power semiconductor device unit, the potential of the AC output busbar 214 jumps back and forth between the DC positive voltage and the DC negative voltage, which may cause electromagnetic interference to the other components in the system, especially the driver board 23 which is closer. The range that the electric field lines emitted from the AC output busbar 214 can reach is the area that can be affected. The denser the electric field lines, the greater the impact.

[0107] contrast Figure 1 and Figure 8 For example, Figure 1 As shown in FIG. 1 , the AC output busbar 214 is close to the driving board 23, and there are dense electric field lines between the two, which indicates that the potential jump on the AC output busbar 214 in the prior art is likely to affect the driving board 23. Figure 8As shown, the DC positive busbar 210 and the DC negative busbar 212 form a shield between the AC output busbar 214 and the drive board 23 in the embodiment of the present invention, and the main electric field lines emitted from the AC output busbar 214 cannot reach the drive board 23. Therefore, the potential jump on the AC output busbar 214 in the embodiment of the present invention is not likely to affect the normal operation of the drive board 23. This design reduces the possibility of electromagnetic interference and improves the electromagnetic compatibility of the system.

[0108] Reference below Figure 2-Figure 19 A power semiconductor module according to an embodiment of the present invention is described. The power semiconductor module 10 can be used to drive a power semiconductor device unit and realize efficient power conversion and distribution.

[0109] In some embodiments, the power semiconductor module 10 includes: at least one power semiconductor device unit, each power semiconductor device unit includes a plurality of power semiconductor devices, a driving board 23 and the busbar assembly 21 described in the above embodiments.

[0110] In some embodiments, the power semiconductor device may generally include various types of semiconductor devices, and the specific selection depends on the application needs and performance requirements. The power semiconductor device may include but is not limited to silicon (Si) power semiconductor devices, silicon carbide (SiC) power semiconductor devices, gallium nitride (GaN) power semiconductor devices, etc. No specific limitation is made here.

[0111] Among them, SiC power semiconductor devices have become increasingly popular in recent years and are widely used in many fields. This is because SiC power semiconductor devices can be used in high-performance and high-temperature applications such as power conversion in electric vehicles and solar inverters. Compared with Si power semiconductor devices, SiC power semiconductor devices have lower switching losses and higher operating temperature capabilities, thereby improving the efficiency and reliability of the system.

[0112] In some embodiments, the driver board 23 can be used to control and manage the power semiconductor device unit. The driver board 23 can include circuits, chips, electronic components, etc. to ensure the correct operation of the power semiconductor device unit. The design of the driver board 23 usually involves electrical connection with the power semiconductor device unit to ensure proper current and voltage control.

[0113] In some embodiments, the busbar assembly 21 may be one of the key components of the power semiconductor module 10. The busbar assembly 21 may include a DC positive busbar 210, a DC negative busbar 212, an AC output busbar 214, and an insulating layer. These busbars are used to connect and distribute current, provide voltage connection, and reduce the impact range of electromagnetic interference through a specific layout structure to ensure stable operation of the circuit.

[0114] According to the power semiconductor module 10 of the embodiment of the present invention, by adopting the busbar assembly 21 described in the above embodiment, the layout structure of the busbar assembly 21 adopts a DC busbar and an AC output pole busbar 214 that are stacked in sequence from top to bottom along the thickness direction of the power semiconductor device unit. The AC output pole busbar 214 is away from the driving board 23, and when the power semiconductor device is working, the AC output pole busbar 214 can be affected by the electromagnetic shielding effect of the DC busbar above, which effectively limits the electromagnetic interference of the potential jump of the AC output pole busbar to other key circuit components, especially the driving board 23 that is relatively close, thereby improving the anti-interference performance of the power semiconductor device unit, thereby ensuring the stable operation of the unit.

[0115] In an embodiment, a plurality of power semiconductor devices of each power semiconductor device unit are spaced apart and arranged in an array, wherein the number of rows and columns of the array is not specifically limited herein.

[0116] Fig. 9 is a schematic diagram of a layout of power semiconductor devices connected in parallel according to an embodiment of the present invention, such as Fig. 9 As shown, the power semiconductor device includes a plurality of first power semiconductor devices 220 and a plurality of second power semiconductor devices 230 .

[0117] Among them, a plurality of first power semiconductor devices 220 are connected in parallel, and a plurality of second power semiconductor devices 230 are also connected in parallel to increase the current carrying capacity and power processing capacity. A plurality of first power semiconductor devices 220 are arranged along a first direction, and a plurality of second power semiconductor devices 230 are arranged along a first direction. For example, the first direction may be the length direction of the power semiconductor device unit. A plurality of first power semiconductor devices 220 and a plurality of second power semiconductor devices 230 are arranged correspondingly along a second direction. For example, the second direction may be the width direction of the power semiconductor device unit. The first direction and the second direction are both perpendicular to the thickness direction of the power semiconductor device unit, and the first direction and the second direction intersect.

[0118] The plurality of first power semiconductor devices 220 together form an upper bridge structure 50, and the plurality of second power semiconductor devices 230 together form a lower bridge structure 60. In addition, in order to reduce the parasitic inductance of the commutation loop, the upper bridge structure 50 and the lower bridge structure 60 should be as close as possible, so as to naturally form a Fig. 9 The upper and lower bridge structures are shown arranged in a line.

[0119] Fig.10 is a schematic diagram of a layout of four groups of power semiconductor devices connected in parallel according to an embodiment of the present invention, Fig.10 The arrangement of the power semiconductor devices of the embodiment of the present invention and the corresponding positions of the bus capacitor 24 and the load 26 are shown. Fig.10As shown, the first power semiconductor device 220 and the second power semiconductor device 230 cooperate with each other to form a half-bridge subunit 70 of the power semiconductor device. Fig.10 The four half-bridge subunits 70 are closely arranged along the length direction. The bus capacitor 24 and the load 26 can be arranged on both sides of the half-bridge subunit 70 along the length direction. The positions of the bus capacitor 24 and the load 26 can be interchanged.

[0120] In some embodiments, the design of the busbar assembly 21 needs to consider the layout of the capacitor and the load 26. The power semiconductor device needs to be connected to the DC capacitor, and the distance between the two needs to be as close as possible. Specifically, when the busbar capacitor 24 is arranged in the width direction of the power semiconductor device, multiple power semiconductor device units need to be arranged in the length direction. Assuming that the length direction of the power semiconductor device is L, the length of multiple power semiconductor device units (such as three power semiconductor device units) along the dimension expansion direction is 3*N*L. When the busbar capacitor 24 is arranged in the length direction of the power semiconductor device, multiple power semiconductor device units need to be arranged in the width direction. At this time, the length of multiple power semiconductor device units (such as three power semiconductor device units) along the dimension expansion direction is N*L, and high-power occasions require more power semiconductor devices to be connected in parallel. Therefore, the busbar capacitor 24 is arranged in the length direction of the power semiconductor device. Multiple power semiconductor device units have smaller unidirectional dimensions, which can improve the overall integration of the system.

[0121] Fig.11 is a schematic diagram of the layout of power semiconductor devices in a half-bridge subunit according to an embodiment of the present invention, such as Fig.11 As shown, the half-bridge subunit 70 may include a first power semiconductor device 220 and a second power semiconductor device 230. The first power semiconductor device 220 and the second power semiconductor device 230 may be arranged in rotational symmetry, and the terminal of the first power semiconductor device 220 is located on the side of the first power semiconductor device 220 away from the second power semiconductor device 230 in the second direction. This means that the terminal of the first power semiconductor device 220, such as an electrode or a pin, is positioned on the side farther from the second power semiconductor device 230. The terminal of the second power semiconductor device 230 is located on the side of the second power semiconductor device 230 away from the first power semiconductor device 220 in the second direction. This means that the terminal of the second power semiconductor device 230, such as an electrode or a pin, is positioned on the side farther from the second power semiconductor device 230.

[0122] Therefore, the terminals of the two power semiconductor devices face different sides. This arrangement helps to avoid electromagnetic interference and short circuit between the terminals, and is easier to connect to the corresponding busbar. There are no terminals on the adjacent sides of the two power semiconductor devices, so there is no need to consider the insulation distance. The system integration can be improved by reducing the distance between the two power semiconductor devices.

[0123] Fig.12 is a schematic diagram of a first power semiconductor device according to an embodiment of the present invention, Fig.12 As shown, the terminals of the first power semiconductor device 220 include a first drain terminal 221 and a first source terminal 222. These terminals may be electrodes or pins on the device, and are used to connect to a circuit for current control and power transmission.

[0124] The first drain terminal 221 is connected to the first DC connection terminal of the busbar assembly 21, and can be connected to the DC positive busbar 210, so that the current can flow from the DC positive busbar 210 to the first drain terminal 221 of the first power semiconductor device 220. The first source terminal 222 is connected to the first AC connection terminal of the busbar assembly 21. This connection method helps to guide the output current from the first power semiconductor device 220 to the AC output busbar 214, and then transmit it to the external load 26 or other circuit parts.

[0125] Through this connection method, the first drain terminal 221 and the first source terminal 222 of the first power semiconductor device 220 are respectively connected to different terminals of the busbar assembly 21 to achieve the transmission of DC and AC current, which is conducive to the normal operation and power transmission of the power semiconductor module 10.

[0126] In some embodiments, Fig.13 As shown, the terminals of the second power semiconductor device 230 include a second drain terminal 231 and a second source terminal 232. These terminals can also be electrodes or pins on the device, which are used to connect to the circuit for current control and power transmission.

[0127] The second drain terminal 231 is connected to the second AC connection terminal of the busbar assembly 21. This connection mode allows the output current to be guided from the second power semiconductor device 230 to the AC output busbar 214, and then transmitted to the external load 26 or other circuit parts to transfer power or signals. The second source terminal 232 is connected to the second DC connection terminal of the busbar assembly 21. This connection mode helps to connect the second source terminal 232 of the second power semiconductor device 230 to a DC power supply or other related circuit elements to ensure that the current flows from the device to other parts.

[0128] Through this connection mode, the second drain terminal 231 and the second source terminal 232 of the second power semiconductor device 230 are respectively connected to different terminals of the busbar assembly 21 to achieve the transmission of direct current and alternating current. This connection mode can be used in semiconductor power modules to effectively control current and transmit power.

[0129] like Figure 2 and Fig.12 As shown, the terminal of the first power semiconductor device 220 also includes a first drive terminal 223. The first drive terminal 223 extends from the side of the busbar assembly 21 along the thickness direction of the power semiconductor device unit and is connected to the drive board 23, which is used to control and adjust the operation of the power semiconductor device. By connecting to the drive board 23, the first drive terminal 223 can receive a signal from the control circuit to effectively control the working state of the first power semiconductor device 220. This connection allows the control electronics in the circuit to work in coordination with the power semiconductor device to achieve the required power transfer and current control. The first drive terminal 223 can be divided into a first drive source terminal 224 and a first drive gate terminal 225.

[0130] like Figure 2 and Fig.13 As shown, the terminal of the second power semiconductor device 230 also includes a second drive terminal 233, which extends from the side of the busbar assembly along the thickness direction of the power semiconductor device unit and is connected to the drive board 23. In this way, the second drive terminal 233 can receive a signal from the control circuit to effectively control the working state of the second power semiconductor device 230. The second drive terminal 233 can be divided into a first drive source terminal 234 and a first drive gate terminal 235.

[0131] In an embodiment, the lead-out side of the DC positive terminal and the DC negative terminal of the busbar assembly of the power semiconductor device unit is different from the lead-out side of the terminal of the first power semiconductor device (220), and the lead-out side of the DC positive terminal and the DC negative terminal of the busbar assembly of the power semiconductor device unit is different from the lead-out side of the terminal of the second power semiconductor device (230). For example, the lead-out side of the DC positive terminal and the DC negative terminal is one side of the length direction of the power semiconductor device unit, so as to be connected to the DC bus capacitor located on one side of the length direction of the power semiconductor device unit, and the first power semiconductor device and the second power semiconductor device respectively lead out terminals from both sides of the width direction of the power semiconductor device.

[0132] In some embodiments, the driving terminal of the power semiconductor device can be connected using Kelvin. This can eliminate the common source inductance of the power circuit and the driving circuit in the device, reduce the impact of the power circuit current on the driving circuit, and reduce the power loss during the switching process. This design can improve switching efficiency and reduce power loss, which is particularly important in high-power applications.

[0133] In some embodiments, multiple power chips can be packaged inside a power semiconductor device. This means that multiple power chips can work in parallel in the same device, thereby improving the overall power carrying capacity. This multi-chip packaging design helps to meet the needs of high-power applications and improve power density.

[0134] Fig.14 is a schematic diagram of a heat dissipation substrate according to an embodiment of the present invention. Fig.14 As shown, each power semiconductor device unit further includes a heat dissipation substrate 25 . A plurality of power semiconductor devices are disposed on the heat dissipation substrate 25 .

[0135] Among them, the heat dissipation substrate 25 can be a key component in the power semiconductor device unit, which is used to provide mechanical support and heat dissipation for the power semiconductor device unit, thereby ensuring the stable operation and good heat dissipation performance of the power semiconductor device unit. The heat dissipation substrate 25 is usually made of a material with good thermal conductivity, such as aluminum or copper, to effectively transfer the heat generated by the power semiconductor device to the external environment to prevent the device from overheating, thereby keeping the operating temperature of the device within an acceptable range. Therefore, the heat dissipation substrate 25 plays an important role in heat dissipation in the power semiconductor module 10.

[0136] In some embodiments, the heat dissipation substrate 25 can achieve good thermal conductivity and ensure that the CTE (coefficient of thermal expansion) of the heat dissipation substrate 25 matches that of the power semiconductor device. This means ensuring that the heat dissipation substrate 25 and the power semiconductor device have similar coefficients of thermal expansion to prevent different degrees of size or shape changes between them when the temperature changes. If their coefficients of thermal expansion do not match, they may be distorted, stressed, or cracked when the temperature rises or falls, thereby affecting the performance and reliability of the device.

[0137] like Fig.14As shown, the heat dissipation substrate 25 includes: a substrate 251, a plurality of bosses 252 and a plurality of heat dissipation columns 253. Among them, the substrate 251 can be the main part of the heat dissipation substrate 25, which is usually a flat plate-like structure for supporting and fixing the power semiconductor device and realizing heat dissipation. It is usually made of a material with good thermal conductivity, such as metal. A plurality of bosses 252 are arranged on the first surface of the substrate 251, and these bosses 252 can be small protrusion structures for placing power semiconductor devices. A plurality of bosses 252 are arranged corresponding to a plurality of power semiconductor devices, and the power semiconductor devices are located on these bosses 252. The design of the bosses 252 helps to increase the contact area between the device and the heat dissipation substrate 25 to conduct heat more effectively. In an embodiment, the substrate 251, the plurality of bosses 252 and the heat dissipation columns 253 of the heat dissipation substrate can be an integral structure formed by the same material such as copper.

[0138] In addition, a boss 252 is machined on the upper surface of the heat dissipation substrate 25, which can be used to ensure that the creepage distance between the terminal and the heat dissipation substrate 25 meets the safety requirements and facilitates installation and positioning. The creepage distance can be the minimum distance between two conductive surfaces, which needs to meet specific electrical safety standards to ensure the reliability and safety of the equipment. This is very critical in power electronic equipment, especially in high-power applications, because electrical isolation and insulation problems may cause serious safety risks when the voltage is high. Therefore, it is necessary to ensure that the distance between the terminal of the power semiconductor device and the heat dissipation substrate 25 is large enough to prevent electric breakdown or electrical short circuit, thereby preventing damage to the circuit or causing a malfunction.

[0139] In some embodiments, a plurality of heat dissipation columns 253 are disposed on the second surface of the substrate 251, and the second surface of the substrate 251 is opposite to the first surface of the substrate 251. The heat dissipation columns 253 may transfer the heat transferred to the substrate 251 through the bosses 252 to the external environment of the module to ensure that the power semiconductor device is maintained at a safe operating temperature.

[0140] In some embodiments, the heat sink 253 can dissipate heat through a liquid cooling system. Specifically, the heat sink 253 can be a thermally conductive element, usually made of metal, used to transfer the heat of the device to the coolant for heat dissipation. In the liquid cooling system, the coolant flows through the heat sink 253, absorbs the heat generated by the device, and then takes the heat away by flowing to maintain the temperature of the device within an acceptable range. The design and placement of the heat sink 253 are very important for effective liquid cooling. They need to be in close contact with the device to maximize the heat transfer efficiency and ensure that the coolant can effectively absorb and dissipate heat.

[0141] Fig.15 Schematic diagram of a heat conducting layer according to an embodiment of the present invention. Fig.15As shown, a heat conducting layer 240 is provided at the bottom of the power semiconductor device. The heat conducting layer 240 is usually made of a material with good thermal conductivity, such as a copper layer. The main function of the heat conducting layer 240 is to increase the heat conduction efficiency between the power semiconductor device and the boss 252. By adding a heat conducting layer 240 at the bottom of the power semiconductor device, the heat generated by the device can be more effectively transferred to the boss 252, and then conducted to the heat dissipation substrate 25. This helps to prevent the power semiconductor device from overheating and improves the performance and reliability of the device. In some embodiments, the heat conducting layer 240 and the corresponding boss 252 can be connected by a sintering process.

[0142] Specifically, for example, a power semiconductor device may use a copper-ceramic-copper structure substrate, with the chip and device terminals connected to the upper copper surface, the middle layer of ceramic playing an insulating and thermal conductive role, and the lower copper surface exposed as a thermal conductive layer 240.

[0143] Fig.16 It is a thermal simulation diagram based on the prior art. Fig.17 is a thermal simulation diagram according to an embodiment of the present invention. Fig.16 and Fig.17 The influence of the arrangement of power semiconductor devices in the prior art and the present invention on heat dissipation is demonstrated. Except for the different arrangements and the resulting differences in the size of the heat dissipation substrate 25, other simulation conditions are kept consistent, including the same chip and substrate 251 size, heat dissipation pin size, single chip loss, inlet and outlet pressure difference, inlet coolant temperature, etc. The maintenance of these conditions makes the comparison more reliable.

[0144] Furthermore, the simulation results show that the average junction temperature of the chip under the prior art is 150.0°C, the maximum junction temperature is 159.4°C, and the average junction temperature difference between the group of power semiconductor devices closest to the entrance and the group of power semiconductor devices farthest is 21.7°C. The simulation results of the present invention show that the average junction temperature of the chip is 145.4°C, the maximum junction temperature is 153.1°C, and the average junction temperature difference between the group of power semiconductor devices closest to the entrance and the group of power semiconductor devices farthest is 17°C. It can be seen from the simulation results that the arrangement adopted by the present invention performs better in terms of heat dissipation and temperature uniformity. There are two main reasons for this difference:

[0145] First, the length of the water tank flow channel is shorter. In the design of the present invention, the water tank flow channel is shorter, which reduces the overall flow resistance and thus improves the overall heat dissipation performance. The shorter water tank flow channel can more effectively transfer the coolant to the vicinity of the chip, reducing the operating temperature of the chip.

[0146] Second, the temperature difference between the inlet and outlet coolant is reduced. The layout design of the present invention can reduce the temperature difference between the inlet and outlet coolant, which helps to improve the temperature uniformity performance. A smaller temperature difference means that the cooling effect on chips at different positions is more uniform, thereby reducing the temperature difference.

[0147] Taking all these factors into consideration, the design of the present invention has obvious advantages in terms of heat dissipation and temperature uniformity, which helps to ensure the stability and reliability of the system under high load 26.

[0148] In some embodiments, the at least one power semiconductor device unit includes three power semiconductor device units, and the three power semiconductor device units are arranged along the second direction to form a three-phase full-bridge power semiconductor device unit.

[0149] Fig.18 is a schematic diagram of the layout of a three-phase full-bridge power semiconductor device unit according to an embodiment of the present invention, such as Fig.18 As shown, the U-phase half-bridge power semiconductor device unit 20, the V-phase half-bridge power semiconductor device unit 30, and the W-phase half-bridge power semiconductor device unit 40 are arranged on the heat dissipation substrate 25 along the length direction to form a three-phase full-bridge power semiconductor device unit. The DC connection terminal of each phase is located on the same side for connecting the external bus capacitor 24, while the AC connection terminal is located on the other side for connecting the load 26. This layout can ensure that each phase can be easily connected to the required circuit elements, and the three-phase full-bridge power semiconductor device unit has a more moderate length-to-width ratio, which is conducive to improving the integration of the converter, and has good scalability when the number of power semiconductor devices in parallel increases.

[0150] Fig.19 1 is an overall schematic diagram of a three-phase full-bridge integrated power semiconductor device unit according to an embodiment of the present invention. Fig.19 As shown, the power semiconductor module 10 is composed of a heat dissipation substrate 25, a three-phase full-bridge power semiconductor device unit and a driving board 23 from bottom to top. This layout has high integration, compact design, good heat dissipation performance and reliability, and is particularly suitable for high-power and high-density applications.

[0151] Reference below Fig. 20 An electronic device according to an embodiment of the present invention is described.

[0152] Fig. 20 is a block diagram of an electronic device according to an embodiment of the present invention, such as Fig. 20 As shown, the electronic device 1 includes the power semiconductor module 10 described in the above embodiment.

[0153] In some embodiments, the electronic device 1 can be any type of electronic system or device. This device may be used in various applications, including but not limited to power electronic converters, motor drives, power supplies, etc. The electronic device 1 can be applied in various fields, such as industrial automation, transportation, medical equipment, energy management, etc. The specific application depends on the type and configuration of the power semiconductor module 10, as well as the design and purpose of the device.

[0154] According to the electronic device 1 of the embodiment of the present invention, by adopting the power semiconductor module 10 described in the above embodiment, the layout structure of the busbar assembly 21 in the power semiconductor module 10 adopts a DC positive busbar 210, a DC negative busbar 212 and an AC output busbar 214 that are stacked in sequence from top to bottom in the vertical direction. The AC output busbar 214 is away from the driving board 23, and when the power semiconductor device is working, the AC output busbar 214 can be subjected to the electromagnetic shielding effect from the upper DC positive busbar 210 and the DC negative busbar 212, which effectively limits the electromagnetic interference of the potential jump of the AC output busbar to other key circuit components, especially the driving board 23 that is relatively close, and improves the anti-interference performance of the power semiconductor device unit, thereby helping to improve the performance and stability of the electronic device and ensure the reliable operation of the unit.

[0155] Fig.21 is a block diagram of a vehicle according to an embodiment of the present invention, such as Fig.21 As shown, a vehicle 100 includes the electronic device 1 described in the above embodiment.

[0156] In some embodiments, the vehicle 100 may include, but is not limited to, a car, a truck, a motorcycle, an electric car, etc. Such a vehicle 100 is generally used for transportation, commuting, entertainment, or other purposes. The electronic device may generally be installed in the power control system of the vehicle 100 for managing and controlling tasks such as power flow, motor control, and battery management of the vehicle 100. The power semiconductor module 10 of the electronic device may play a key role in the vehicle power system. It may control the charging and discharging of the battery, manage the power output of the motor, and ensure the stability and efficiency of the vehicle power system.

[0157] The vehicle 100 according to the embodiment of the present invention, by adopting the electronic equipment described in the above embodiment, can reduce the risk of electromagnetic interference, improve the anti-interference performance of the power semiconductor device unit, ensure the reliability and stability of the vehicle's electronic system, and thus improve the overall performance of the vehicle 100.

[0158] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0159] In the description of the present invention, "plurality" means two or more.

[0160] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials, or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example.

[0161] Although the embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the claims and their equivalents.

Claims

1. A busbar assembly, characterized in that: Used in a power semiconductor device unit, the power semiconductor device unit comprising a plurality of power semiconductor devices and a driving board; The busbar assembly is suitable for being arranged between the plurality of power semiconductor devices and the driving board; The busbar assembly comprises a DC busbar and an AC output pole busbar which are stacked along the thickness direction of the power semiconductor device unit, and the AC output pole busbar is far away from the driving board.

2. The busbar assembly according to claim 1, characterized in that: The DC busbar comprises a DC positive busbar and a DC negative busbar stacked along the thickness direction of the power semiconductor device unit; The DC positive busbar is close to the driving board or the DC negative busbar is close to the driving board.

3. The busbar assembly according to claim 2, characterized in that: The current directions of the DC positive busbar and the DC negative busbar are opposite.

4. The busbar assembly according to claim 2, characterized in that: The DC positive busbar extends along a first direction and a second direction, and a first DC connection terminal is led out from a first side of the power semiconductor device unit; The first direction and the second direction are both perpendicular to the thickness direction of the power semiconductor device unit, and the first direction intersects with the second direction.

5. The busbar assembly according to claim 4, characterized in that: The DC negative busbar extends along the first direction and the second direction, and a second DC connection terminal is led out from a second side of the power semiconductor device unit, wherein the first side and the second side are opposite sides along the second direction.

6. The busbar assembly according to claim 5, characterized in that: The AC output busbar extends along the first direction and the second direction and leads out a first AC connection terminal at a first side of the power semiconductor device unit, and the AC output busbar leads out a second AC connection terminal at a second side of the power semiconductor device unit.

7. The busbar assembly according to claim 5, characterized in that: The DC positive busbar leads out a DC positive terminal from the third side or the fourth side of the power semiconductor device unit, and the DC positive terminal is suitable for being connected to the first end of the bus capacitor, wherein the third side and the fourth side of the power semiconductor device unit are opposite sides along the first direction.

8. The busbar assembly according to claim 7, characterized in that: The DC negative busbar leads out a DC negative terminal on the third side or the fourth side of the power semiconductor device unit, and the DC negative terminal is suitable for being connected to the second end of the bus capacitor. The DC negative terminal and the DC positive terminal are located on the same side of the power semiconductor device unit.

9. The busbar assembly according to claim 7, characterized in that: The AC output busbar leads out an AC terminal on the fourth side or the third side of the power semiconductor device unit, the AC terminal is suitable for connecting to a load, and the AC terminal and the DC positive terminal or the DC negative terminal are located on opposite sides of the power semiconductor device unit.

10. The busbar assembly according to any one of claims 1 to 9, characterized in that: The busbar assembly further comprises: A first insulating layer, wherein the first insulating layer is located between the DC positive busbar and the DC negative busbar.

11. The busbar assembly according to claim 10, characterized in that: The busbar assembly further comprises: A second insulating layer, wherein the second insulating layer is located between the DC negative busbar and the AC output busbar.

12. The busbar assembly according to claim 11, characterized in that: The busbar assembly further comprises: A third insulating layer, wherein the third insulating layer is located on the DC positive busbar.

13. The busbar assembly according to claim 6, characterized in that: The terminals of each busbar and the terminals of the corresponding connected power semiconductor device have a horizontal contact area to be connected by laser welding.

14. A power semiconductor module, characterized in that: include: At least one power semiconductor device unit, each of the power semiconductor device units comprises a plurality of power semiconductor devices, a driving board and a busbar assembly as claimed in any one of claims 1-13.

15. The power semiconductor module according to claim 14, characterized in that: The multiple power semiconductor devices of each power semiconductor device unit are arranged at intervals and in an array.

16. The power semiconductor module according to claim 15, characterized in that: The plurality of power semiconductor devices include a plurality of first power semiconductor devices connected in parallel and a plurality of second power semiconductor devices connected in parallel; A plurality of the first power semiconductor devices are arranged along a first direction, and a plurality of the second power semiconductor devices are arranged along the first direction; The plurality of first power semiconductor devices and the plurality of second power semiconductor devices are arranged in a one-to-one correspondence along the second direction.

17. The power semiconductor module according to claim 16, characterized in that: The terminal of the first power semiconductor device is located on a side of the first power semiconductor device away from the second power semiconductor device; The terminal of the second power semiconductor device is located at a side of the second power semiconductor device away from the first power semiconductor device.

18. The power semiconductor module according to claim 17, characterized in that: The terminals of the first power semiconductor device include a first drain terminal and a first source terminal; The first drain terminal is connected to the first DC connection terminal of the busbar assembly; The first source terminal is connected to the first AC connection terminal of the busbar assembly.

19. The power semiconductor module according to claim 18, characterized in that The terminals of the second power semiconductor device include a second drain terminal and a second source terminal; The second drain terminal is connected to the second AC connection terminal of the busbar assembly; The second source terminal is connected to the second DC connection terminal of the busbar assembly.

20. The power semiconductor module according to claim 19, characterized in that The terminals of the first power semiconductor device further include a first driving terminal, which extends from a side of the busbar assembly along a thickness direction of the power semiconductor device unit and is connected to the driving board; The terminals of the second power semiconductor device further include a second driving terminal, which extends from a side surface of the busbar assembly along a thickness direction of the power semiconductor device unit and is connected to the driving board.

21. The power semiconductor device module according to claim 17, characterized in that: The lead-out sides of the DC positive terminal and the DC negative terminal of the busbar assembly of the power semiconductor device unit are different from the lead-out sides of the terminals of the first power semiconductor device, and the lead-out sides of the DC positive terminal and the DC negative terminal of the busbar assembly of the power semiconductor device unit are different from the lead-out sides of the terminals of the second power semiconductor device.

22. The power semiconductor module according to claim 14, characterized in that: Each of the power semiconductor device units further includes a heat dissipation substrate, and a plurality of the power semiconductor devices are arranged on the heat dissipation substrate.

23. The power semiconductor module according to claim 22, characterized in that: The heat dissipation substrate comprises: substrate; A plurality of bosses, wherein the plurality of bosses are arranged on the first surface of the substrate, the plurality of bosses are arranged corresponding to the plurality of power semiconductor devices, and the power semiconductor devices are located on the bosses; A plurality of heat dissipation columns are arranged on the second surface of the substrate, and the second surface of the substrate is opposite to the first surface of the substrate.

24. The power semiconductor module according to claim 23, characterized in that A heat-conducting layer is arranged at the bottom of the power semiconductor device, and the heat-conducting layer is connected to the corresponding boss through a sintering process.

25. The power semiconductor module according to claim 14, characterized in that The at least one power semiconductor device unit includes three power semiconductor device units, and the three power semiconductor device units are arranged along the second direction.

26. An electronic device, characterized in that: A power semiconductor module comprising any one of claims 14-25.

27. A vehicle, characterized in that: An electronic device comprising the electronic device described in claim 26.

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