Silver electrode lead wiring method for semiconductor nano electric heating device

Abstract

The invention belongs to the technical field of electrodes for electrothermal films, and particularly relates to a silver electrode lead wiring method for a semiconductor nano electrothermal device, which is characterized in that a high-temperature-resistant cordierite ceramic matrix and a silver paste electrode on a microcrystalline glass matrix are sintered and cured together at high temperature, and the cordierite ceramic matrix has the excellent characteristic of high temperature resistance; the cordierite ceramic substrate is a silver wire, has stable chemical properties, can be perfectly combined with silver paste on the glass-ceramic substrate, is sintered and fixed in the glass-ceramic substrate without falling off, the silver wire is fixed through the cordierite ceramic substrate, and the silver wire is directly connected with the silver paste on the glass-ceramic substrate in the high-temperature sintering process, so that the connection reliability of the whole wiring part is ensured, and the service life of the whole wiring part is prolonged. Stability of electrifying current and voltage is guaranteed during later electrifying and using, the high-temperature-resistant power supply can stably adapt to work in a high-temperature environment for a long time, and the limitation that a tin welding wire technology cannot be used at a high temperature is overcome.

Description

[Technical field]

[0001] The invention belongs to the technical field of electrodes for electric heating films, and in particular relates to a method for connecting silver electrode leads of a semiconductor nano-electric heating device. [Background technology]

[0002] Semiconductor nano-electric heating film is a new generation of heating material. Its heating method is different from that of traditional metal resistance wire. It has zero inductance, pure resistance heating, can accept 1V-1000V voltage input, and the power supply is not divided into positive and negative, and can be used for AC and DC. And the surface heating breaks the traditional linear heating form, with good heat transfer effect and high electric heat conversion efficiency: 80%~97%, which has good energy-saving advantages. It has the physical and chemical properties of acid and alkali corrosion resistance, oxidation resistance, flame retardancy, moisture resistance, high film hardness, and requires grinding with a hardness higher than diamond sand to damage the film. The film is non-toxic, has no harmful radiation, and has no pollution.

[0003] The electrodes of transparent semiconductor nano-electric heating film are divided into high-temperature electrodes and low-temperature electrodes according to the heating temperature of the coated microcrystalline glass. The high-temperature electrode is also called the silver paste electrode. The production process of the electrode is the crystallization process of the silver paste and microcrystalline glass. The silver paste electrode has a series of excellent physical and chemical properties such as high temperature resistance, not easy to oxidize, not easy to wear, high conductivity, moisture resistance, and resistance to certain acidity and alkali. Existing semiconductor nano-electric heating film electric heating devices generally use soldering technology to weld the output terminal to the electrode, but because the solder paste begins to melt at about 180°C, it will cause the wiring to fall off, so that the electrode cannot adapt to the high temperature environment and the working conditions are limited. [Summary of the invention]

[0004] The invention provides a silver electrode lead wiring method for a semiconductor nano-electric heating device which can adapt to high temperature environments.

[0005] The present invention is achieved by the following technical solutions:

[0006] A method for connecting silver electrode leads of a semiconductor nano-electrothermal device, the semiconductor nano-electrothermal device comprising a microcrystalline glass substrate, an electric heating film arranged on the microcrystalline glass substrate, two silver paste electrodes arranged at two ends of the electric heating film, a cordierite ceramic substrate arranged on the silver paste electrodes, and a silver wire fixed on the cordierite ceramic substrate and electrically connected to the silver paste electrodes. The method for connecting silver electrode leads of the semiconductor nano-electrothermal device comprises the following steps:

[0007] Step S1: opening a lead groove at the bottom of the cordierite ceramic substrate;

[0008] Step S2: embedding one end of the silver wire in the lead groove, and applying a proper amount of silver paste at the position of the lead groove at the bottom of the cordierite ceramic substrate;

[0009] Step S3: placing the cordierite ceramic substrate in step S2 on the glass-ceramic substrate, and the applied silver paste is in contact with the silver paste electrode;

[0010] Step S4: sintering the glass-ceramic substrate carrying the cordierite ceramic substrate in step S3 at a high temperature, so that the cordierite ceramic substrate and the glass-ceramic substrate are fixedly connected together by silver paste.

[0011] As described above, in a method for connecting silver electrode leads of a semiconductor nano-electrothermal device, the lead groove is L-shaped, and one end of the lead groove penetrates the side wall of the cordierite ceramic substrate, one end of the silver wire is embedded in the lead groove, and the other end penetrates the side wall of the cordierite ceramic substrate and extends out of the cordierite ceramic substrate.

[0012] In the above-mentioned method for connecting silver electrode leads of a semiconductor nano-electric heating device, the step S4 comprises:

[0013] Step S41: preheating and drying stage, the glass-ceramic substrate carrying the cordierite ceramic substrate is transported as a whole to a preheating drying tunnel at a temperature of 80-150° C. for 10-15 minutes;

[0014] Step S42: high temperature sintering stage, the preheated and dried cordierite ceramic substrate and the microcrystalline glass substrate are transported as a whole to a sintering furnace at a temperature of 580-750°C for 10-20 minutes.

[0015] In the above-mentioned method for connecting silver electrode leads of a semiconductor nano-electrothermal device, in step S4, the temperature of the preheating and drying stage is 80° C. and the time is 15 minutes; the temperature of the high-temperature sintering stage is 580° C. and the time is 20 minutes.

[0016] In the above-mentioned method for connecting silver electrode leads of a semiconductor nano-electrothermal device, in step S4, the temperature of the preheating and drying stage is 110° C. and the time is 13 minutes; the temperature of the high-temperature sintering stage is 650° C. and the time is 15 minutes.

[0017] In the above-mentioned method for connecting silver electrode leads of a semiconductor nano-electrothermal device, in step S4, the temperature of the preheating and drying stage is 150° C. and the time is 15 minutes; the temperature of the high-temperature sintering stage is 750° C. and the time is 20 minutes.

[0018] Compared with the prior art, the present invention has the following advantages:

[0019] The invention provides a method for wiring silver electrode leads of a semiconductor nano-electrothermal device, wherein a high-temperature resistant cordierite ceramic substrate and a silver paste electrode on a microcrystalline glass substrate are sintered and solidified together at high temperature. Since the cordierite ceramic substrate itself has excellent high-temperature resistance and stable chemical properties, it can be perfectly combined with the silver paste on the microcrystalline glass substrate and sintered and fixed in the microcrystalline glass substrate without falling off. The silver wire is fixed by the cordierite ceramic substrate, and during the high-temperature sintering process, the silver wire is directly connected to the silver paste on the microcrystalline glass substrate, thereby ensuring the connection reliability of the entire wiring part and the stability of the power-on current and voltage when it is powered on for use later. The cordierite ceramic substrate can stably adapt to work in a high-temperature environment for a long time, thereby overcoming the limitation that the tin welding wire technology cannot be used at high temperatures.

Brief Description of the Drawings

[0020] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required for describing the embodiments are briefly introduced below.

[0021] Figure 1 It is a schematic flow chart of a method for wiring silver electrode leads of a semiconductor nano-electrothermal device in a specific embodiment of the present invention;

[0022] Figure 2 It is a schematic diagram of the structure of a semiconductor nano-electrothermal device in a specific embodiment of the present invention;

[0023] Figure 3 Schematic diagram of the decomposed structure of the cordierite ceramic substrate and the silver wire in a specific embodiment of the present invention. [Specific implementation method]

[0024] In order to make the technical problems, technical solutions and beneficial effects solved by the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0025] When the embodiments of the present invention mention ordinal numbers such as "first" and "second", unless they do express the meaning of order according to the context, they should be understood as being merely for the purpose of distinction.

[0026] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0027] Specific embodiments, such as Figure 1-3 A method for connecting silver electrode leads of a semiconductor nano-electrothermal device is shown, wherein the semiconductor nano-electrothermal device comprises a microcrystalline glass substrate 1, an electrothermal film 2 arranged on the microcrystalline glass substrate 1, two silver paste electrodes 3 arranged at two ends of the electrothermal film 2, a cordierite ceramic substrate 4 arranged on the silver paste electrodes 3, and a silver wire 5 fixed on the cordierite ceramic substrate 4 and electrically connected to the silver paste electrodes 3. The method for connecting silver electrode leads of the semiconductor nano-electrothermal device comprises the following steps:

[0028] Step S1: opening a lead groove 6 at the bottom of the cordierite ceramic substrate 4;

[0029] Step S2: embed one end of the silver wire 5 in the lead groove 6, and apply a proper amount of silver paste at the position of the bottom of the cordierite ceramic substrate 4 corresponding to the lead groove 6;

[0030] Step S3: placing the cordierite ceramic substrate 4 in step S2 on the glass-ceramic substrate 1, and the applied silver paste is in contact with the silver paste electrode 3;

[0031] Step S4: high-temperature sintering the microcrystalline glass substrate 1 carrying the cordierite ceramic substrate 4 in step S3, so that the cordierite ceramic substrate 4 and the microcrystalline glass substrate 1 are fixedly connected together by silver paste.

[0032] Specifically, the lead groove 6 is L-shaped, and one end of the lead groove 6 penetrates the side wall of the cordierite ceramic substrate 4, one end of the silver wire 5 is embedded in the lead groove 6, and the other end penetrates the side wall of the cordierite ceramic substrate 4 and extends out of the cordierite ceramic substrate 4, so that the silver wire 5 is fixed more firmly.

[0033] Specifically, step S4 includes:

[0034] Step S41: preheating and drying stage, the glass-ceramic substrate 1 carrying the cordierite ceramic substrate 4 is transported as a whole to a preheating drying tunnel at a temperature of 80-150° C. for 10-15 minutes;

[0035] Step S42: high temperature sintering stage, the preheated and dried cordierite ceramic substrate 4 and the glass-ceramic substrate 1 are integrally transported to a sintering furnace at a temperature of 580-750° C. for 10-20 minutes.

[0036] As an optional mode of the present invention, in specific embodiment 1, in step S4, the temperature of the preheating and drying stage is 80° C., and the time is 15 minutes; the temperature of the high-temperature sintering stage is 580° C., and the time is 20 minutes.

[0037] As an optional mode of the present invention, in specific embodiment 2, in step S4, the temperature of the preheating and drying stage is 110° C., and the time is 13 minutes; the temperature of the high-temperature sintering stage is 650° C., and the time is 15 minutes.

[0038] As an optional mode of the present invention, in specific embodiment 3, in step S4, the temperature of the preheating and drying stage is 150° C., and the time is 15 minutes; the temperature of the high-temperature sintering stage is 750° C., and the time is 20 minutes.

[0039] The above is an implementation method provided in combination with specific content, and it is not considered that the specific implementation of the present invention is limited to these descriptions. At the same time, due to different industry naming, it is not limited to the above naming, nor is it limited to English naming. Any similarity or similarity with the method, structure, etc. of the present invention, or a number of technical deductions or substitutions made under the premise of the concept of the present invention, shall be regarded as the protection scope of the present invention.

Claims

1. A method for connecting silver electrode leads of a semiconductor nano-electric heating device, characterized in that: The semiconductor nano-electric heating device comprises a microcrystalline glass substrate (1), an electric heating film (2) arranged on the microcrystalline glass substrate (1), two silver paste electrodes (3) arranged at two opposite ends of the electric heating film (2), a cordierite ceramic substrate (4) arranged on the silver paste electrodes (3), and a silver wire (5) fixed on the cordierite ceramic substrate (4) and electrically connected to the silver paste electrodes (3). The method for connecting the silver electrode leads of the semiconductor nano-electric heating device comprises the following steps: Step S1: opening a lead groove (6) at the bottom of the cordierite ceramic substrate (4); Step S2: embedding one end of the silver wire (5) in the lead groove (6), and applying a proper amount of silver paste at the position of the lead groove (6) at the bottom of the cordierite ceramic substrate (4); Step S3: placing the cordierite ceramic substrate (4) in step S2 on the microcrystalline glass substrate (1), and the applied silver paste is in contact with the silver paste electrode (3); Step S4: high-temperature sintering is performed on the microcrystalline glass substrate (1) carrying the cordierite ceramic substrate (4) in step S3, so that the cordierite ceramic substrate (4) and the microcrystalline glass substrate (1) are fixedly connected together by silver paste.

2. A method for connecting silver electrode leads of a semiconductor nano-electric heating device according to claim 1, characterized in that: The lead groove (6) is L-shaped, and one end of the lead groove (6) penetrates the side wall of the cordierite ceramic substrate (4); one end of the silver wire (5) is embedded in the lead groove (6), and the other end penetrates the side wall of the cordierite ceramic substrate (4) and extends out of the cordierite ceramic substrate (4).

3. A method for connecting silver electrode leads of a semiconductor nano-electric heating device according to claim 1, characterized in that: The step S4 comprises: Step S41: preheating and drying stage, the glass-ceramic substrate (1) carrying the cordierite ceramic substrate (4) is transported as a whole to a preheating drying tunnel at a temperature of 80-150° C. for 10-15 minutes; Step S42: high temperature sintering stage, the preheated and dried cordierite ceramic substrate (4) and the microcrystalline glass substrate (1) are transported as a whole to a sintering furnace at a temperature of 580-750°C for 10-20 minutes.

4. A method for connecting silver electrode leads of a semiconductor nano-electric heating device according to claim 3, characterized in that: In step S4, the temperature of the preheating and drying stage is 80° C. and the time is 15 minutes; the temperature of the high-temperature sintering stage is 580° C. and the time is 20 minutes.

5. A method for connecting silver electrode leads of a semiconductor nano-electric heating device according to claim 3, characterized in that: In step S4, the temperature of the preheating and drying stage is 110° C. and the time is 13 minutes; the temperature of the high-temperature sintering stage is 650° C. and the time is 15 minutes.

6. A method for connecting silver electrode leads of a semiconductor nano-electric heating device according to claim 3, characterized in that: In step S4, the temperature of the preheating and drying stage is 150° C. and the time is 15 minutes; the temperature of the high-temperature sintering stage is 750° C. and the time is 20 minutes.

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