Electrode wiring method of semiconductor nano electrothermal film electric heating device

Abstract

The invention belongs to the technical field of electrodes for electrothermal films, and particularly relates to an electrode wiring method for a semiconductor nano electrothermal film electrothermal device, a high-temperature-resistant ceramic output piece and a silver paste electrode on a microcrystalline glass substrate are sintered and cured together at high temperature, and the ceramic output piece has the excellent characteristic of high temperature resistance and stable chemical property, so that the ceramic output piece is not easy to deform. The ceramic output piece can be perfectly combined with silver paste on the glass ceramic base body, sintered and fixed in the glass ceramic base body without falling off, and the silver paste on the glass ceramic base body is directly connected with the silver coating of the ceramic output piece, so that the connection reliability of the whole wiring part is ensured, the stability of electrifying current and voltage is ensured when the ceramic output piece is electrified for use later, and the service life of the ceramic output piece is prolonged. The device can stably adapt to work in a high-temperature environment for a long time, and overcomes the limitation that a tin welding wire technology cannot be used at high temperature.

Description

[Technical field]

[0001] The invention belongs to the technical field of electrodes for electric heating films, and in particular relates to an electrode wiring method for an electric heating device of a semiconductor nano-electric heating film. [Background technology]

[0002] Semiconductor nano-electric heating film is a new generation of heating material. Its heating method is different from that of traditional metal resistance wire. It has zero inductance, pure resistance heating, can accept 1V-1000V voltage input, and the power supply is not divided into positive and negative, and can be used for AC and DC. And the surface heating breaks the traditional linear heating form, with good heat transfer effect and high electric heat conversion efficiency: 80%~97%, which has good energy-saving advantages. It has the physical and chemical properties of acid and alkali corrosion resistance, oxidation resistance, flame retardancy, moisture resistance, high film hardness, and requires grinding with a hardness higher than diamond sand to damage the film. The film is non-toxic, has no harmful radiation, and has no pollution.

[0003] The electrodes of transparent semiconductor nano-electric heating film are divided into high-temperature electrodes and low-temperature electrodes according to the heating temperature of the coated microcrystalline glass. The high-temperature electrode is also called the silver paste electrode. The production process of the electrode is the crystallization process of the silver paste and microcrystalline glass. The silver paste electrode has a series of excellent physical and chemical properties such as high temperature resistance, not easy to oxidize, not easy to wear, high conductivity, moisture resistance, and resistance to certain acidity and alkali. Existing semiconductor nano-electric heating film electric heating devices generally use soldering technology to weld the output terminal to the electrode, but because the solder paste begins to melt at about 180°C, it will cause the wiring to fall off, so that the electrode cannot adapt to the high temperature environment and the working conditions are limited. [Summary of the invention]

[0004] The object of the present invention is to provide an electrode wiring method for a semiconductor nano-electric heating film electric heating device that can adapt to high temperature environments.

[0005] The present invention is achieved by the following technical solutions:

[0006] A method for connecting electrodes of a semiconductor nano-electrothermal film device, the semiconductor nano-electrothermal film device comprising a semiconductor nano-electrothermal film structure and a ceramic output member, the semiconductor nano-electrothermal film structure comprising a microcrystalline glass substrate, an electric heating film arranged on the microcrystalline glass substrate, and two silver paste electrodes arranged at two ends of the electric heating film, the ceramic output member comprising a cordierite ceramic substrate and a conductive sheet, the method for connecting electrodes of the semiconductor nano-electrothermal film device comprising the following steps:

[0007] Step S1: silver plating on the surface of the cordierite ceramic substrate;

[0008] Step S2: installing a conductive sheet on the silver-plated cordierite ceramic substrate to form a ceramic output component, and the conductive sheet is electrically connected to the silver-plated layer;

[0009] Step S3: placing the ceramic output member on the semiconductor nano-electric heating film structure, and the silver-plated layer on the ceramic output member is in contact with the silver paste electrode on the semiconductor nano-electric heating film structure;

[0010] Step S4: sintering the semiconductor nano-electric heating film structure and the ceramic output component at high temperature, so that the microcrystalline glass matrix of the semiconductor nano-electric heating film structure and the cordierite ceramic matrix of the ceramic output component are connected together through silver paste curing.

[0011] In the above-mentioned method for connecting electrodes of a semiconductor nano-electric heating film electric heating device, the step S4 comprises:

[0012] Step S41: preheating and drying stage, the semiconductor nano-electric heating film structure and the ceramic output part placed on the semiconductor nano-electric heating film structure are transported as a whole to a preheating drying tunnel at a temperature of 80-150° C. for 10-15 minutes;

[0013] Step S42: high temperature sintering stage, the semiconductor nano-electric heating film structure and the ceramic output part after preheating and drying are transported as a whole to a sintering furnace at a temperature of 580-750° C. for 10-20 minutes.

[0014] In the electrode wiring method of the semiconductor nano-electrothermal film electrothermal device as described above, in step S4, the temperature of the preheating and drying stage is 80° C. and the time is 15 minutes; the temperature of the high-temperature sintering stage is 580° C. and the time is 20 minutes.

[0015] In the electrode wiring method of the semiconductor nano-electrothermal film electrothermal device described above, in step S4, the temperature of the preheating and drying stage is 110° C. and the time is 13 minutes; the temperature of the high-temperature sintering stage is 650° C. and the time is 15 minutes.

[0016] In the electrode wiring method of the semiconductor nano-electrothermal film electrothermal device as described above, in step S4, the temperature of the preheating and drying stage is 150° C. and the time is 15 minutes; the temperature of the high-temperature sintering stage is 750° C. and the time is 20 minutes.

[0017] In the electrode wiring method of the semiconductor nano-electrothermal film electric heating device as described above, one end of the conductive sheet is fixed to the cordierite ceramic substrate and electrically connected to the silver-plated layer, and the other end is provided with a wire connection hole.

[0018] As described above, in the electrode wiring method of a semiconductor nano-electrothermal film electric heating device, the cordierite ceramic substrate is provided with a plug-in slot, a first connecting hole connected to the plug-in slot, a connecting bolt and a locking nut, one end of the conductive sheet is inserted into the plug-in slot to be electrically connected to the silver-plated layer, and a second connecting hole corresponding to the first connecting hole is provided, the connecting bolt passes through the first connecting hole and the second connecting hole, and cooperates with the locking nut to fix the conductive sheet on the cordierite ceramic substrate.

[0019] Compared with the prior art, the present invention has the following advantages:

[0020] The present invention provides an electrode wiring method for a semiconductor nano-electrothermal film electric heating device, which adopts a high-temperature resistant ceramic output component and a silver paste electrode on a microcrystalline glass substrate to be sintered and solidified together at high temperature. Since the ceramic output component itself has excellent high-temperature resistance and stable chemical properties, it can be perfectly combined with the silver paste on the microcrystalline glass substrate and sintered and fixed in the microcrystalline glass substrate without falling off. The silver paste on the microcrystalline glass substrate is directly connected to the silver-plated layer of the ceramic output component, which ensures the connection reliability of the entire wiring part and the stability of the power-on current and voltage when it is powered on for use later. It can stably adapt to work in a high-temperature environment for a long time, and overcomes the limitation that the tin welding wire technology cannot be used at high temperatures.

Brief Description of the Drawings

[0021] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required for describing the embodiments are briefly introduced below.

[0022] Figure 1 It is a schematic structural diagram of a semiconductor nano-electric heating film electric heating device in a specific embodiment of the present invention;

[0023] Figure 2 It is a structural schematic diagram of a ceramic output member in a specific embodiment of the present invention;

[0024] Figure 3 It is a schematic diagram of the exploded structure of the ceramic output member in a specific embodiment of the present invention;

[0025] Figure 4 It is a schematic flow chart of the electrode wiring method of the semiconductor nano-electrothermal film electric heating device in a specific embodiment of the present invention. [Specific implementation method]

[0026] In order to make the technical problems, technical solutions and beneficial effects solved by the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0027] When the embodiments of the present invention mention ordinal numbers such as "first" and "second", unless they do express the meaning of order according to the context, they should be understood as being merely for the purpose of distinction.

[0028] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0029] Specific embodiments, such as Figure 1-3 A semiconductor nano-electric heating film electric heating device shown includes: a semiconductor nano-electric heating film structure 1, including a microcrystalline glass substrate 11, an electric heating film 12 arranged on the microcrystalline glass substrate 11, and two silver paste electrodes 13 arranged at both ends of the electric heating film 12; a ceramic output member 2, on the surface of which a silver-plated layer 3 is provided, the ceramic output member 2 is fixed on the microcrystalline glass substrate 11, and the silver-plated layer 3 is electrically connected to the silver paste electrode 13. The high-temperature resistant ceramic output member and the silver paste electrode on the microcrystalline glass substrate are sintered and solidified at high temperature. Because the ceramic output member itself has excellent high-temperature resistance and stable chemical properties, it can be perfectly combined with the silver paste on the microcrystalline glass substrate and sintered and fixed in the microcrystalline glass substrate without falling off. The silver paste on the microcrystalline glass substrate is directly connected to the silver-plated layer of the ceramic output member, which ensures the connection reliability of the entire wiring part, and ensures the stability of the current and voltage when it is powered on and used later, and can be long-term and stably adapted to work in a high-temperature environment, overcoming the limitation that the tin welding wire technology cannot be used at high temperatures.

[0030] Specifically, the ceramic output part 2 includes: a cordierite ceramic substrate 21, the silver-plated layer 3 is arranged on the surface of the cordierite ceramic substrate 21; a conductive sheet 22, one end of which is fixed to the cordierite ceramic substrate 21 and electrically connected to the silver-plated layer 3, and the other end is provided with a wire connection hole 221. The high-temperature resistant cordierite ceramic and the silver electrode on the microcrystalline glass are selected and sintered and solidified at high temperature. Because the cordierite ceramic itself has excellent high-temperature resistance and stable chemical properties, it can be perfectly combined with the silver paste on the microcrystalline glass and sintered and fixed in the microcrystalline glass without falling off. The silver paste on the microcrystalline glass is directly connected to the output end of the cordierite ceramic, which ensures the connection reliability of the entire wiring part and ensures the stability of the power-on current and voltage when it is powered on and used later. When in use, the wire is connected to the end of the conductive sheet 22 away from the cordierite ceramic substrate 21, which overcomes the limitation that the tin welding wire technology cannot be used at high temperature.

[0031] In addition, the cordierite ceramic substrate 21 is provided with an insertion slot 41, a first connecting hole 42 connected to the insertion slot 41, a connecting bolt 43 and a locking nut 44. One end of the conductive sheet 22 is inserted into the insertion slot 41 and electrically connected to the silver-plated layer 3, and is provided with a second connecting hole 45 corresponding to the first connecting hole 42. The connecting bolt 43 passes through the first connecting hole 42 and the second connecting hole 45, and cooperates with the locking nut 44 to fix the conductive sheet 22 on the cordierite ceramic substrate 21.

[0032] The present invention also provides an electrode wiring method for a semiconductor nano-electric heating film electric heating device, such as Figure 4 As shown, the following steps are included:

[0033] Step S1: silver plating on the surface of the cordierite ceramic substrate 21;

[0034] Step S2: installing the conductive sheet 22 on the silver-plated cordierite ceramic substrate 21 to form the ceramic output member 2, and the conductive sheet 22 is electrically connected to the silver-plated layer 3;

[0035] Step S3: placing the ceramic output member 2 on the semiconductor nano-electric heating film structure 1, and the silver-plated layer 3 on the ceramic output member 2 is in contact with the silver paste electrode 13 on the semiconductor nano-electric heating film structure 1;

[0036] Step S4: The semiconductor nano-electric heating film structure 1 and the ceramic output part 2 are subjected to high-temperature sintering, so that the microcrystalline glass substrate 11 of the semiconductor nano-electric heating film structure 1 and the cordierite ceramic substrate 21 of the ceramic output part 2 are connected together by curing with silver paste. The high-temperature resistant ceramic output part and the silver paste electrode on the microcrystalline glass substrate are sintered and cured together at high temperature. Because the ceramic output part itself has excellent high-temperature resistance and stable chemical properties, it can be perfectly combined with the silver paste on the microcrystalline glass substrate and sintered and fixed in the microcrystalline glass substrate without falling off. The silver paste on the microcrystalline glass substrate is directly connected to the silver-plated layer of the ceramic output part, which ensures the connection reliability of the entire wiring part, and ensures the stability of the power-on current and voltage when it is powered on and used later. It can adapt to work in a high-temperature environment for a long time and stably, overcoming the limitation that the tin welding wire technology cannot be used at high temperatures.

[0037] Specifically, step S4 includes:

[0038] Step S41: preheating and drying stage, the semiconductor nano-electrothermal film structure 1 and the ceramic output member 2 placed on the semiconductor nano-electrothermal film structure 1 are integrally transported to a preheating drying tunnel at a temperature of 80-150° C. for 10-15 minutes;

[0039] Step S42: high temperature sintering stage, the preheated and dried semiconductor nano-electric heating film structure 1 and the ceramic output member 2 are integrally transported to a sintering furnace at a temperature of 580-750° C. for 10-20 minutes.

[0040] As an optional mode of the present invention, in specific embodiment 1, in step S4, the temperature of the preheating and drying stage is 80° C., and the time is 15 minutes; the temperature of the high-temperature sintering stage is 580° C., and the time is 20 minutes.

[0041] As an optional mode of the present invention, in specific embodiment 2, in step S4, the temperature of the preheating and drying stage is 110° C., and the time is 13 minutes; the temperature of the high-temperature sintering stage is 650° C., and the time is 15 minutes.

[0042] As an optional mode of the present invention, in specific embodiment 3, in step S4, the temperature of the preheating and drying stage is 150° C., and the time is 15 minutes; the temperature of the high-temperature sintering stage is 750° C., and the time is 20 minutes.

[0043] The above is an implementation method provided in combination with specific content, and it is not considered that the specific implementation of the present invention is limited to these descriptions. At the same time, due to different industry naming, it is not limited to the above naming, nor is it limited to English naming. Any similarity or similarity with the method, structure, etc. of the present invention, or a number of technical deductions or substitutions made under the premise of the concept of the present invention, shall be regarded as the protection scope of the present invention.

Claims

1. A method for connecting electrodes of a semiconductor nano-electrothermal film electrothermal device, characterized in that: The semiconductor nano-electrothermal film electric heating device comprises a semiconductor nano-electrothermal film structure (1) and a ceramic output component (2); the semiconductor nano-electrothermal film structure (1) comprises a microcrystalline glass substrate (11), an electric heating film (12) arranged on the microcrystalline glass substrate (11), and two silver paste electrodes (13) arranged at two opposite ends of the electric heating film (12); the ceramic output component (2) comprises a cordierite ceramic substrate (21) and a conductive sheet (22); and the electrode wiring method of the semiconductor nano-electrothermal film electric heating device comprises the following steps: Step S1: silver plating on the surface of the cordierite ceramic substrate (21); Step S2: installing a conductive sheet (22) on the silver-plated cordierite ceramic substrate (21) to form a ceramic output component (2), and the conductive sheet (22) is electrically connected to the silver-plated layer (3); Step S3: placing the ceramic output member (2) on the semiconductor nano-electric heating film structure (1), and the silver-plated layer (3) on the ceramic output member (2) is in contact with the silver paste electrode (13) on the semiconductor nano-electric heating film structure (1); Step S4: The semiconductor nano-electrothermal film structure (1) and the ceramic output component (2) are subjected to high-temperature sintering, so that the microcrystalline glass substrate (11) of the semiconductor nano-electrothermal film structure (1) and the cordierite ceramic substrate (21) of the ceramic output component (2) are connected together by curing with silver paste.

2. The electrode wiring method of a semiconductor nano-electric heating film electric heating device according to claim 1, characterized in that: The step S4 comprises: Step S41: preheating and drying stage, the semiconductor nano-electrothermal film structure (1) and the ceramic output member (2) placed on the semiconductor nano-electrothermal film structure (1) are transported as a whole to a preheating drying tunnel at a temperature of 80-150° C. for 10-15 minutes; Step S42: high temperature sintering stage, the semiconductor nano-electric heating film structure (1) and the ceramic output component (2) after preheating and drying are transported as a whole to a sintering furnace at a temperature of 580-750° C. for 10-20 minutes.

3. The electrode wiring method of a semiconductor nano-electric heating film electric heating device according to claim 2, characterized in that: In step S4, the temperature of the preheating and drying stage is 80° C. and the time is 15 minutes; the temperature of the high-temperature sintering stage is 580° C. and the time is 20 minutes.

4. The electrode wiring method of a semiconductor nano-electric heating film electric heating device according to claim 2, characterized in that: In step S4, the temperature of the preheating and drying stage is 110° C. and the time is 13 minutes; the temperature of the high-temperature sintering stage is 650° C. and the time is 15 minutes.

5. The electrode wiring method of a semiconductor nano-electric heating film electric heating device according to claim 2, characterized in that: In step S4, the temperature of the preheating and drying stage is 150° C. and the time is 15 minutes; the temperature of the high-temperature sintering stage is 750° C. and the time is 20 minutes.

6. The electrode wiring method of a semiconductor nano-electric heating film electric heating device according to claim 1, characterized in that: One end of the conductive sheet (22) is fixed to the cordierite ceramic substrate (21) and electrically connected to the silver-plated layer (3), and the other end is provided with a wire connection hole (221).

7. The electrode wiring method of a semiconductor nano-electric heating film electric heating device according to claim 1, characterized in that: The cordierite ceramic substrate (21) is provided with a plug-in slot (41), a first connection hole (42) connected to the plug-in slot (41), a connection bolt (43) and a locking nut (44); one end of the conductive sheet (22) is inserted into the plug-in slot (41) to be electrically connected to the silver-plated layer (3), and a second connection hole (45) corresponding to the first connection hole (42) is provided; the connection bolt (43) passes through the first connection hole (42) and the second connection hole (45), and cooperates with the locking nut (44) to fix the conductive sheet (22) on the cordierite ceramic substrate (21).

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