Light-emitting chip and LED packaging structure

Abstract

The invention provides a light-emitting chip and an LED packaging structure. The light-emitting chip comprises a substrate, and a P-type semiconductor layer, a light-emitting layer and an N-type semiconductor layer which are stacked are arranged on the substrate; the light-emitting chip further comprises a separator which at least divides the light-emitting layer and the N-type semiconductor layer into a plurality of sections so as to form a plurality of sections of light-emitting parts. Therefore, the number of chips on the substrate can be reduced, the die bonding process can be simplified, the influence of position deviation on the light spot quality of a product can be reduced, the occupied space of the chips on the substrate can be saved, and more chips can be conveniently installed so as to improve the lighting effect of the product.

Description

Technical Field

[0001] The present application relates to the technical field of LED products, and in particular to a light-emitting chip and an LED packaging structure. Background Art

[0002] Two-color COB is a technology that directly mounts two LED chips of different colors on a substrate and packages them into a whole. During die bonding, multiple chips of two different colors need to be accurately mounted to the preset positions of the substrate, which has high requirements on the process and is prone to chip position deviation, affecting the light spot quality of the product. Summary of the invention

[0003] In view of this, the present application provides a light-emitting chip and an LED packaging structure, which are beneficial to improving the light spot quality of LED products.

[0004] In order to achieve the above objectives, this application provides the following technical solutions:

[0005] A light-emitting chip comprises a substrate on which a stacked P-type semiconductor layer, a light-emitting layer and an N-type semiconductor layer are arranged; the light-emitting chip also comprises an isolating member, which at least separates the light-emitting layer and the N-type semiconductor layer into multiple sections to form a multi-segment light-emitting portion.

[0006] Optionally, the light emitting layer has two sections and is symmetrically distributed on both sides of the isolation member; the N-type semiconductor layer has two sections and is symmetrically distributed on both sides of the isolation member.

[0007] Optionally, a first electrode is connected to the P-type semiconductor layer, and two sections of the N-type semiconductor layer are respectively connected to a second electrode.

[0008] Optionally, the P-type semiconductor layer, the light-emitting layer and the N-type semiconductor layer are arranged in sequence in a direction away from the substrate, and a first insulating member is disposed on sides of the first electrode close to the N-type semiconductor layer and the light-emitting layer.

[0009] Optionally, the P-type semiconductor layer is provided with two sections, and is symmetrically arranged on both sides of the isolation member.

[0010] Optionally, two sections of the P-type semiconductor layer are respectively connected to a first electrode, and two sections of the N-type semiconductor layer are respectively connected to a second electrode.

[0011] Optionally, the P-type semiconductor layer, the light-emitting layer and the N-type semiconductor layer are arranged in sequence in a direction close to the substrate, and a second insulating member is provided on the side of the second electrode close to the P-type semiconductor layer and the light-emitting layer.

[0012] Optionally, the two first electrodes are symmetrically distributed on both sides of the isolation member, and the two second electrodes are symmetrically distributed on both sides of the isolation member.

[0013] Optionally, the isolation member is configured as a transparent resin membrane.

[0014] Optionally, the light emitting chip includes a protective layer, and the protective layer extends to the periphery of the substrate to wrap the P-type semiconductor layer, the light emitting layer and the N-type semiconductor layer.

[0015] Optionally, the length of the light emitting chip is set to 991-1041 microns, and the width of the light emitting chip is set to 535-585 microns.

[0016] An LED packaging structure comprises a substrate and a light-emitting chip packaged on the substrate, wherein the light-emitting chip is any of the light-emitting chips described above.

[0017] Optionally, the substrate is encapsulated with a cofferdam, a first fluorescent glue and a second fluorescent glue, the first fluorescent glue covers a section of the light-emitting portion of the light-emitting chip; the second fluorescent glue is located in the cofferdam and covers the first fluorescent glue and the light-emitting chip.

[0018] Optionally, a positive electrode pad and two negative electrode pads are provided on the substrate, the P-type semiconductor layer of the light-emitting chip is electrically connected to the positive electrode pad, and the two N-type semiconductor layers of the light-emitting chip are electrically connected to the two negative electrode pads respectively.

[0019] Optionally, the side length of the substrate is set to 13-19 mm, and the diameter of the die-bonding region of the substrate is set to 10-16 mm.

[0020] Optionally, the side length of the substrate is set to 13.35 mm, the diameter of the solid crystal region of the substrate is set to 10.85 mm, the light-emitting chip is arranged in the solid crystal region of the substrate (11), and the number of the light-emitting chips is set to 28.

[0021] Optionally, the number of the light-emitting chips is set to 28-72.

[0022] Optionally, the side length of the substrate is set to 2.5-3.5 mm, and the number of the light-emitting chips is set to 1-3.

[0023] Optionally, the length of the substrate is set to 3.5 mm and the width is set to 2.8 mm;

[0024] Alternatively, the length and width of the substrate are both set to 3 mm.

[0025] The light-emitting chip and LED packaging structure provided by the present application, the isolating member at least separates the light-emitting layer and the N-type semiconductor layer into multiple sections to form a multi-segment light-emitting portion, and then the two chips of different colors can be integrated into one light-emitting chip, which can reduce the number of chips on the substrate during solid crystal bonding, simplify the solid crystal bonding process, and reduce the impact of position deviation on the quality of the product light spot. Moreover, since the multi-segment light-emitting portions on the light-emitting chip are arranged closely, the space occupied by the chip on the substrate can be saved, which is conducive to installing more chips to improve the light efficiency of the product. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on the provided drawings without paying any creative work.

[0027] Figure 1 A cross-sectional view of a light emitting chip according to a first embodiment;

[0028] Figure 2 A top view of the light emitting chip shown in the first embodiment;

[0029] Figure 3 A cross-sectional view of a light emitting chip according to a second embodiment;

[0030] Figure 4 A top view of the light emitting chip shown in the second embodiment Figure 1 ;

[0031] Figure 5 A top view of the light emitting chip shown in the second embodiment Figure 2 ;

[0032] Figure 6 A cross-sectional view of an LED packaging structure shown in some embodiments;

[0033] Figure 7 FIG. 1 is a top view of an LED package structure according to some embodiments.

[0034] In the figure: 1. substrate; 2. protective layer; 3. P-type semiconductor layer; 4. light-emitting layer; 5. N-type semiconductor layer; 6. isolation member; 7. first electrode; 8. second electrode; 9. first insulating member; 10. second insulating member; 11. base plate; 12. BT board; 13. cofferdam; 14. first fluorescent glue; 15. second fluorescent glue; 16. positive electrode pad; 17. negative electrode pad; 18. light-emitting chip. DETAILED DESCRIPTION

[0035] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0036] like Figure 1-Figure 5 As shown, the embodiment of the present application provides a light-emitting chip, including a substrate 1, and a P-type semiconductor layer 3, a light-emitting layer 4 and an N-type semiconductor layer 5 arranged on the substrate 1, and the P-type semiconductor layer 3, the light-emitting layer 4 and the N-type semiconductor layer 5 are arranged along a first direction (for example Figure 1 and Figure 3 The substrate 1 is stacked in layers (in the vertical direction), and the light-emitting layer 4 is located between the P-type semiconductor layer 3 and the N-type semiconductor layer 5. During processing, the P-type semiconductor layer 3, the light-emitting layer 4 and the N-type semiconductor layer 5 can be grown in sequence on the substrate 1, or the N-type semiconductor layer 5, the light-emitting layer 4 and the P-type semiconductor layer 3 can be grown in sequence on the substrate 1.

[0037] The light emitting chip further includes an isolating member 6, which at least separates the light emitting layer 4 and the N-type semiconductor layer 5 into multiple segments to form a multi-segment light emitting portion. For example, the separated light emitting portions are arranged into two, three or four segments, preferably two segments, and two segments are used as an example for explanation. Specifically, the isolating member 6 is extended along the first direction to separate the light emitting layer 4 and the N-type semiconductor layer 5 into multiple segments arranged along the second direction, and form a plurality of segments along the second direction (for example, Figure 1 and Figure 3 In the process, the isolator 6 can be processed on the substrate 1 first, and then the light-emitting layer 4 and the N-type semiconductor layer 5 can be processed on both sides of the isolator 6; or the P-type semiconductor layer 3, the light-emitting layer 4 and the N-type semiconductor layer 5 can be processed first, and then isolation grooves can be opened on the light-emitting layer 4 and the N-type semiconductor layer 5, and finally the isolator 6 can be arranged in the isolation grooves.

[0038] In this way, through the design of the isolation member 6, a light-emitting chip can have multiple light-emitting sections, and then two chips of different colors can be integrated into one light-emitting chip, which can reduce the number of chips on the substrate 11 during die bonding, simplify the die bonding process, and reduce the impact of position deviation on the quality of the product light spot. Moreover, since the multiple light-emitting sections on the light-emitting chip are arranged closely, the space occupied by the chip on the substrate 11 can be saved, which is conducive to installing more chips to improve the light efficiency of the product.

[0039] It should be noted that, since the light-emitting chip has multiple light-emitting sections for realizing light emission of different colors, the size of the light-emitting chip can be designed to be larger, for example, the size of the light-emitting chip is twice the size of the traditional chip, which is conducive to the glue dispenser to dispense glue on one of the light-emitting sections on the light-emitting chip. Specifically, the length of the light-emitting chip is set to 991-1041 microns, preferably 1016 microns, and the width of the light-emitting chip is set to 535-585 microns, preferably 560 microns.

[0040] In this solution, the isolation member 6 is made of a transparent resin material, which has good light transmittance and structural stability, can be well isolated, is easy to process, and has low cost.

[0041] like Figure 1 and Figure 3 As shown, the light-emitting chip also includes a protective layer 2, which is connected to the periphery of the substrate 1, and forms a receiving cavity inside the protective layer 2, and the P-type semiconductor layer 3, the light-emitting layer 4 and the N-type semiconductor layer 5 are located in the receiving cavity. In this way, the protective layer 2 covers the periphery of the P-type semiconductor layer 3, the light-emitting layer 4 and the N-type semiconductor layer 5, which can protect the P-type semiconductor layer 3, the light-emitting layer 4 and the N-type semiconductor layer 5 and improve the stability of the structure. Here, the protective layer 2 can be set to a silicon oxide material, or it can be set to a multi-layer form, for example, the protective layer has a silicon oxide layer and a transparent resin layer, so that the protective layer has good hardness and structural strength, which can prevent the light-emitting chip from being damaged by bumps.

[0042] In the first embodiment, the spacer 6 separates the light emitting layer 4 and the N-type semiconductor layer 5 into two sections, and the spacer 6 does not separate the P-type semiconductor layer 3. In this way, one P-type semiconductor layer 3 can cooperate with two sections of N-type semiconductor layer 5 respectively, and then by controlling the two sections of N-type semiconductor layer 5 respectively, the two sections of light emitting layer 4 can be lighted separately, that is, the light emitting function of two sections of light emitting parts can be realized on one light emitting chip.

[0043] Among them, the two sections of light-emitting layers 4 are symmetrically distributed on both sides of the isolation member 6, and the two sections of N-type semiconductor layers 5 are symmetrically distributed on both sides of the isolation member 6. In this way, the two sections of light-emitting parts formed on both sides of the isolation member 6 are symmetrically arranged, which can ensure that the light-emitting effects of the two sections of the light-emitting parts are consistent, which is beneficial to the control and design of the light spot of the product, thereby improving the quality of the light spot.

[0044] The light-emitting chip has a first electrode 7 and two second electrodes 8, wherein the first electrode 7 is used to connect to the positive electrode of the power supply, and the second electrode 8 is used to connect to the negative electrode of the power supply. The first electrode 7 is connected to the P-type semiconductor layer 3, and the two second electrodes 8 are respectively connected to the two sections of the N-type semiconductor layer 5. When the LED is packaged, the parallel connection and series connection of the two sections of the light-emitting part can be realized by wiring the first electrode 7 and the two second electrodes 8, and then the wiring connection can be performed according to different design requirements, so that the light-emitting chip has a high adaptability.

[0045] It should be noted that, in order to meet the requirement of connecting the first electrode 7 to two leads, the pad of the first electrode 7 may be enlarged.

[0046] like Figure 1 As shown, the P-type semiconductor layer 3, the light-emitting layer 4 and the N-type semiconductor layer 5 are arranged in sequence in a direction away from the substrate 1, that is, the P-type semiconductor layer 3, the light-emitting layer 4 and the N-type semiconductor layer 5 are grown in sequence on the substrate 1. The first electrode 7 is connected to the P-type semiconductor layer 3 and extends in a direction away from the substrate 1, so that the first electrode 7 sequentially penetrates the light-emitting layer 4, the N-type semiconductor layer 5 and the outermost protective layer 2, so as to facilitate wiring of the first electrode 7. Correspondingly, the second electrode 8 extends in a direction away from the substrate 1 and only penetrates the outermost protective layer 2.

[0047] Among them, a first insulating member 9 is provided on the side of the first electrode 7 close to the N-type semiconductor layer 5 and the light-emitting layer 4, and the first insulating member 9 is used to separate the first electrode 7 from the N-type semiconductor layer 5 / light-emitting layer 4, so as to ensure the stability of the structure and light emission. Here, the first insulating member 9 is set to be a silicon oxide material, which has good hardness and insulation, and can also protect the light-emitting chip to prevent the internal structure from collapsing.

[0048] It can be understood that when the first electrode 7 is located on one side of the N-type semiconductor layer 5 and the light-emitting layer 4, the first insulating member 9 is only provided on one side of the first electrode 7 to isolate the first electrode 7 from the N-type semiconductor layer 5 / light-emitting layer 4. When the first electrode 7 is located in the middle of the N-type semiconductor layer 5 and the light-emitting layer 4, the first insulating member 9 needs to be wrapped around the periphery of the first electrode 7 so that the end of the first electrode 7 is connected to the P-type semiconductor layer 3.

[0049] In the second embodiment, the spacer 6 separates the P-type semiconductor layer 3, the light-emitting layer 4 and the N-type semiconductor layer 5 into two sections. In this way, the two sections of the P-type semiconductor layer 3 can cooperate with the two sections of the N-type semiconductor layer 5 respectively, and then the two sections of the P-type semiconductor layer 3 and the two sections of the N-type semiconductor layer 5 can be controlled respectively to realize the light emission of the two sections of the light-emitting layer 4, that is, the light-emitting function of the two sections of the light-emitting part can be realized on one light-emitting chip.

[0050] Among them, two sections of P-type semiconductor layers 3 are symmetrically distributed on both sides of the isolation member 6, two sections of light-emitting layers 4 are symmetrically distributed on both sides of the isolation member 6, and two sections of N-type semiconductor layers 5 are symmetrically distributed on both sides of the isolation member 6. In this way, the two sections of light-emitting parts formed on both sides of the isolation member 6 are symmetrically arranged, which can ensure that the light-emitting effects of the two sections of the light-emitting parts are consistent, which is beneficial to the control and design of the light spot of the product, thereby improving the quality of the light spot.

[0051] In order to improve the connection stability between the substrate 1 and the isolation member 6, the isolation member 6 can extend into the interior of the substrate 1 and separate the local substrate 1. For example, the substrate 1 is set to a multi-layer structure, and the isolation member 6 only separates one or two layers of the substrate 1.

[0052] The light-emitting chip has two first electrodes 7 and two second electrodes 8, wherein the first electrode 7 is used to connect to the positive electrode of the power supply, and the second electrode 8 is used to connect to the negative electrode of the power supply. The two first electrodes 7 are respectively connected to the two sections of the P-type semiconductor layer 3, and the two second electrodes 8 are respectively connected to the two sections of the N-type semiconductor layer 5. When the LED is packaged, the two sections of the light-emitting parts can be connected in parallel and in series by wiring the two first electrodes 7 and the two second electrodes 8, and then the wiring connection can be performed according to different design requirements, so that the light-emitting chip has a high adaptability.

[0053] like Figure 3 As shown, the P-type semiconductor layer 3, the light-emitting layer 4 and the N-type semiconductor layer 5 are arranged in sequence in the direction close to the substrate 1, that is, the N-type semiconductor layer 5, the light-emitting layer 4 and the P-type semiconductor layer 3 are grown in sequence on the substrate 1. The second electrode 8 is connected to the N-type semiconductor layer 5 and extends in the direction away from the substrate 1, so that the second electrode 8 sequentially penetrates the light-emitting layer 4, the P-type semiconductor layer 3 and the outermost protective layer 2, so as to facilitate wiring of the second electrode 8. Correspondingly, the first electrode 7 extends in the direction away from the substrate 1 and only penetrates the outermost protective layer 2.

[0054] Among them, a second insulating member 10 is provided on the side of the second electrode 8 close to the P-type semiconductor layer 3 and the light-emitting layer 4, and the second insulating member 10 is used to separate the second electrode 8 from the P-type semiconductor layer 3 / light-emitting layer 4, so as to ensure the stability of the structure and light emission. Here, the second insulating member 10 is set to be made of silicon oxide, which has good hardness and insulation, and can also protect the light-emitting chip to prevent the internal structure from collapsing.

[0055] It can be understood that when the second electrode 8 is located on one side of the P-type semiconductor layer 3 and the light-emitting layer 4, the second insulating member 10 is only provided on one side of the second electrode 8 to isolate the second electrode 8 from the P-type semiconductor layer 3 / light-emitting layer 4. When the second electrode 8 is located in the middle of the P-type semiconductor layer and the light-emitting layer 4, the second insulating member 10 needs to be wrapped around the periphery of the second electrode 8 so that the end of the second electrode 8 is connected to the N-type semiconductor layer 5.

[0056] like Figure 4-Figure 5 As shown, in order to meet different wiring requirements, the two first electrodes 7 and the two second electrodes 8 are arranged according to the actual situation, wherein the two first electrodes 7 are respectively arranged on both sides of the isolating member 6, and the two second electrodes 8 are respectively arranged on both sides of the isolating member 6, so that the two sections of the light-emitting parts located on both sides of the isolating member 6 each have a first electrode 7 and a second electrode 8, and the arrangement direction of the first electrode 7 and the second electrode 8 is perpendicular to the arrangement direction of the two sections of the light-emitting parts. When the two sections of the light-emitting parts need to be connected in parallel, the arrangement direction of the two first electrodes 7 is symmetrically distributed on both sides of the isolating member 6, and the two second electrodes 8 are symmetrically distributed on both sides of the isolating member 6; when the two sections of the light-emitting parts need to be connected in series, one of the first electrodes 7 and one of the second electrodes 8 are symmetrically distributed on both sides of the isolating member 6.

[0057] like Figure 6-Figure 7 As shown, the embodiment of the present application provides an LED packaging structure, including a substrate 11 and a light-emitting chip 18. The light-emitting chip 18 is packaged in the die-bonding area on the substrate 11, and the light-emitting chip 18 is the light-emitting chip 18 in the above embodiment. In this way, the light-emitting chip 18 has multiple light-emitting sections, so that two chips of different colors can be integrated into one light-emitting chip 18. When bonding, the number of chips on the substrate 11 can be reduced, the die-bonding process can be simplified, and the impact of position deviation on the quality of the product light spot can be reduced, which is conducive to improving the quality of the light spot. Moreover, since the multiple light-emitting sections on the light-emitting chip 18 are closely arranged, the space occupied by the chip on the substrate 11 can be saved, which is conducive to installing more chips to improve the light efficiency of the product.

[0058] like Figure 6 As shown, the substrate 11 is packaged with a BT board 12, a cofferdam 13, a first fluorescent glue 14 and a second fluorescent glue 15, the first fluorescent glue 14 covers one section of the light-emitting portion of the light-emitting chip 18; the second fluorescent glue 15 is located in the cofferdam 13 and covers the first fluorescent glue 14 and the light-emitting chip 18. During the packaging process, the light-emitting chip 18 is fixed to the die-bonding area of ​​the substrate 11, and the first fluorescent glue 14 is applied to the light-emitting chip 18 by a glue dispenser, so that the first fluorescent glue 14 covers one section of the light-emitting portion of the light-emitting chip 18, and the other section of the light-emitting portion is not covered by the first fluorescent glue 14; then the second fluorescent glue 15 is applied to the BT board 12 and the cofferdam 13, so that the second fluorescent glue 15 covers the light-emitting chip 18 and the first fluorescent glue 14, so as to form a lamp bead product. In this way, since the two sections of the light-emitting portion on the light-emitting chip 18 are close and the light effect is uniform and consistent, it has a good light spot quality, and the process of applying transparent glue on the outermost layer can be omitted, simplifying the process and improving production efficiency.

[0059] like Figure 7As shown, a positive electrode pad 16 and two negative electrode pads 17 are provided on the substrate 11, the P-type semiconductor layer 3 of the light-emitting chip 18 is electrically connected to the positive electrode pad 16 (through the first electrode 7), and the two sections of the N-type semiconductor layer 5 of the light-emitting chip 18 are electrically connected to the two negative electrode pads 17 (through the two second electrodes 8). In this way, the two sections of the light-emitting parts on the same light-emitting chip 18 can be connected in parallel, and the light emission of the two sections of the light-emitting parts on the same light-emitting chip 18 can be controlled by controlling the two negative electrode pads 17, thereby improving the diversity and adaptability of the lamp bead products.

[0060] The LED packaging structure is specifically described below based on different types of lamp bead products.

[0061] For larger lamp bead products, a large number of light-emitting chips 18 are arranged in the solid crystal area of ​​the substrate 11. The shape of the substrate 11 and the solid crystal area can be set to be rectangular, circular or polygonal, etc. In the specific scheme, for example, the shape of the substrate 11 is preferably square, the shape of the solid crystal area is preferably circular, the positive electrode pad 16 and the negative electrode pad 17 are set to be arc-shaped, and are respectively located on both sides of the solid crystal area.

[0062] The side length of the substrate 11 is set to 13-19 mm, the diameter of the die-bonding region of the substrate 11 is set to 10-16 mm, and the number of the light-emitting chips 18 is set to 28-72.

[0063] In a specific solution, when the side length of the substrate 11 is set to 13.35 mm, the diameter of the solid crystal area can be set to 10.85 mm, and the number of light-emitting chips 18 can be set to 28 at most. For example, a light-emitting chip 18 has two sections of light-emitting parts, that is, the light-emitting chip 18 is set to a double crystal form, and the solid crystal area is correspondingly provided with 56 light-emitting crystals. When the side length of the substrate 11 is set to 19 mm, the diameter of the solid crystal area can be set to 15.8 mm, and the number of light-emitting chips 18 can be set to 72 at most. For example, a light-emitting chip 18 has two sections of light-emitting parts, that is, the light-emitting chip 18 is set to a double crystal form, and the solid crystal area is correspondingly provided with 144 light-emitting crystals. In this way, through the improved design of the light-emitting chip 18, the number of light-emitting crystals in the solid crystal area can be increased, thereby improving the light efficiency of the lamp bead product.

[0064] For smaller lamp bead products, a smaller number of light-emitting chips 18 are arranged on the substrate 11. During packaging, the light-emitting chips 18 are first packaged on the side of the substrate 11, and then the light-emitting chips 18 are covered with fluorescent glue and lenses, so that the entire side of the substrate 11 forms a light-emitting surface. The shape of the substrate 11 can be set to be rectangular, circular or polygonal, etc.

[0065] The side length of the substrate 11 is set to 2.5-3.5 mm, and the number of the light emitting chips 18 is set to 1-3. When the size of the light emitting chip 18 is large, one light emitting chip 18 can be arranged on the substrate 11, and when the size of the light emitting chip 18 is small, at most 3 chips can be arranged on the substrate 11.

[0066] In a specific solution, the length of the substrate 11 is set to 3.5 mm, and the width is set to 2.8 mm. Alternatively, the length and width of the substrate 11 are both set to 3 mm.

[0067] The basic principles of the present application are described above in conjunction with specific embodiments. However, it should be noted that the advantages, strengths, effects, etc. mentioned in the present application are only examples and not limitations, and it cannot be considered that these advantages, strengths, effects, etc. are required by each embodiment of the present application. In addition, the specific details disclosed above are only for the purpose of illustration and ease of understanding, not for limitation, and the above details do not limit the present application to being implemented by adopting the above specific details.

[0068] The block diagrams of the devices, apparatuses, equipment, and systems involved in this application are only illustrative examples and are not intended to require or imply that they must be connected, arranged, and configured in the manner shown in the block diagram. As will be appreciated by those skilled in the art, these devices, apparatuses, equipment, and systems can be connected, arranged, and configured in any manner. Words such as "including", "comprising", "having", etc. are open words, referring to "including but not limited to", and can be used interchangeably with them. The words "or" and "and" used here refer to the words "and / or" and can be used interchangeably with them, unless the context clearly indicates otherwise. The words "such as" used here refer to the phrase "such as but not limited to", and can be used interchangeably with them.

[0069] It should also be noted that in the apparatus, device and method of the present application, each component or each step can be decomposed and / or recombined. Such decomposition and / or recombination should be regarded as equivalent solutions of the present application.

[0070] The above description of the disclosed aspects is provided to enable any person skilled in the art to make or use the present application. Various modifications to these aspects will be readily apparent to those skilled in the art, and the general principles defined herein may be applied to other aspects without departing from the scope of the present application. Therefore, the present application is not intended to be limited to the aspects shown herein, but rather to the widest scope consistent with the principles and novel features disclosed herein.

[0071] It should be understood that the qualifiers "first", "second", "third", "fourth", "fifth" and "sixth" used in the description of the embodiments of the present application are only used to more clearly explain the technical solutions and cannot be used to limit the scope of protection of the present application.

[0072] The above description has been given for the purpose of illustration and description. In addition, this description is not intended to limit the embodiments of the present application to the forms disclosed herein. Although multiple example aspects and embodiments have been discussed above, those skilled in the art will recognize certain variations, modifications, changes, additions and sub-combinations thereof.

Claims

1. A light-emitting chip, characterized in that: The invention comprises a substrate (1), on which a stacked P-type semiconductor layer (3), a light-emitting layer (4) and an N-type semiconductor layer (5) are arranged; the light-emitting chip further comprises an isolating member (6), wherein the isolating member (6) at least separates the light-emitting layer (4) and the N-type semiconductor layer (5) into multiple sections to form a multi-section light-emitting portion.

2. The light-emitting chip according to claim 1, characterized in that: The light-emitting layer (4) has two sections and is symmetrically distributed on both sides of the isolation member (6); the N-type semiconductor layer (5) has two sections and is symmetrically distributed on both sides of the isolation member (6).

3. The light-emitting chip according to claim 2, characterized in that: The P-type semiconductor layer (3) is connected to a first electrode (7), and two sections of the N-type semiconductor layer (5) are respectively connected to a second electrode (8).

4. The light-emitting chip according to claim 3, characterized in that: The P-type semiconductor layer (3), the light-emitting layer (4) and the N-type semiconductor layer (5) are arranged in sequence in a direction away from the substrate (1), and a first insulating member (9) is provided on the side of the first electrode (7) close to the N-type semiconductor layer (5) and the light-emitting layer (4).

5. The light-emitting chip according to claim 2, characterized in that: The P-type semiconductor layer is provided with two sections, which are symmetrically arranged on both sides of the isolation member (6).

6. The light emitting chip according to claim 5, characterized in that: The two sections of the P-type semiconductor layer (3) are respectively connected to a first electrode (7), and the two sections of the N-type semiconductor layer (5) are respectively connected to a second electrode (8).

7. The light-emitting chip according to claim 6, characterized in that: The P-type semiconductor layer (3), the light-emitting layer (4) and the N-type semiconductor layer (5) are arranged in sequence in a direction close to the substrate (1), and a second insulating member (10) is provided on the side of the second electrode (8) close to the P-type semiconductor layer (3) and the light-emitting layer (4).

8. The light-emitting chip according to claim 6, characterized in that: The two first electrodes (7) are symmetrically distributed on both sides of the isolation member (6), and the two second electrodes (8) are symmetrically distributed on both sides of the isolation member (6).

9. The light-emitting chip according to claim 1, characterized in that: The isolating member (6) is configured as a transparent resin membrane.

10. The light emitting chip according to claim 1, characterized in that: The light-emitting chip comprises a protective layer (2), wherein the protective layer (2) extends to the periphery of the substrate (1) so as to wrap the P-type semiconductor layer (3), the light-emitting layer (4) and the N-type semiconductor layer (5).

11. The light emitting chip according to claim 1, characterized in that: The length of the light emitting chip is set to 991-1041 microns, and the width of the light emitting chip is set to 535-585 microns.

12. An LED packaging structure, characterized in that: It comprises a substrate (11) and a light-emitting chip packaged on the substrate (11), wherein the light-emitting chip is the light-emitting chip according to any one of claims 1 to 11.

13. The LED packaging structure according to claim 12, characterized in that: The substrate (11) is encapsulated with a dam (13), a first fluorescent glue (14) and a second fluorescent glue (15), wherein the first fluorescent glue (14) covers a section of the light-emitting portion of the light-emitting chip; The second fluorescent glue (15) is located in the cofferdam (13) and covers the first fluorescent glue (14) and the light-emitting chip.

14. The LED packaging structure according to claim 12, characterized in that: A positive electrode pad (16) and two negative electrode pads (17) are provided on the substrate (11); the P-type semiconductor layer (3) of the light-emitting chip is electrically connected to the positive electrode pad (16); and the two sections of the N-type semiconductor layer (5) of the light-emitting chip are electrically connected to the two negative electrode pads (17) respectively.

15. The LED packaging structure according to claim 12, characterized in that: The side length of the substrate (11) is set to 13-19 mm, and the diameter of the crystal bonding area of ​​the substrate (11) is set to 10-16 mm.

16. The LED packaging structure according to claim 15, characterized in that: The side length of the substrate (11) is set to 13.35 mm, the diameter of the crystal-fixing region of the substrate (11) is set to 10.85 mm, the light-emitting chip is arranged in the crystal-fixing region of the substrate (11), and the number of the light-emitting chips is set to 28.

17. The LED packaging structure according to claim 12, characterized in that: The number of the light emitting chips is set to be 28-72.

18. The LED packaging structure according to claim 12, characterized in that: The side length of the substrate (11) is set to 2.5-3.5 mm, and the number of the light-emitting chips is set to 1-3.

19. The LED packaging structure according to claim 12, characterized in that: The length of the substrate (11) is set to 3.5 mm, and the width is set to 2.8 mm; Alternatively, the length and width of the substrate (11) are both set to 3 mm.

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