Preparation method of photoelectric device, photoelectric device and electronic equipment

Abstract

The invention provides a photoelectric device. The photoelectric device comprises a first electrode and a second electrode which are oppositely arranged; the functional layer is arranged between the first electrode and the second electrode; wherein the material of the first electrode comprises a first alloy, and / or the material of the second electrode comprises a second alloy, the mixing entropy of the first alloy is not less than 1.61 R, the mixing entropy of the second alloy is not less than 1.61 R, and R is a gas constant. The first alloy is doped in the first material, the second alloy is doped in the second material, and the stability and the service life of the photoelectric device are improved and prolonged by utilizing the characteristics of low corrosion resistance, oxidation resistance, high strength, low thermal expansion coefficient and the like of the first alloy and the second alloy.

Description

Technical Field

[0001] The present application relates to the technical field of optoelectronic devices, and in particular to a method for preparing optoelectronic devices, optoelectronic devices and electronic equipment. Background Art

[0002] High-entropy alloys (HEA) are alloys formed by five or more metals in equal or approximately equal amounts. Entropy refers to the degree of disorder in a system. The more disordered the system, the higher the entropy, and the more orderly the system, the lower the entropy. High-entropy alloys are named because of the high degree of disorder in atoms. High-entropy alloys have high thermal stability and resistance to high-temperature oxidation.

[0003] Photoelectric devices refer to a type of device made using the photoelectric effect of semiconductors, including but not limited to light-emitting devices, solar cells or photodetectors. Taking light-emitting devices as an example, light-emitting devices include but are not limited to organic light-emitting diodes 10 (Organic Light-Emitting Diode, OLED) and quantum dot light-emitting diodes (Quantum Dot Light-Emitting Diodes, QLED). OLED / QLED has a "sandwich" structure, that is, it includes an anode, a cathode and a light-emitting layer, wherein the anode and the cathode are arranged opposite to each other, and the light-emitting layer is arranged between the anode and the cathode. The light-emitting principle of OLED / QLED is: electrons are injected from the cathode of the device into the light-emitting area, and holes are injected from the anode of the device into the light-emitting area. Electrons and holes recombine in the light-emitting area to form excitons, and the recombined excitons release photons in the form of radiation transition, thereby emitting light.

[0004] After years of development, optoelectronic devices have made great progress in performance indicators and have shown great potential for application development. However, there are still some shortcomings and the device life of optoelectronic devices needs to be further improved. Summary of the invention

[0005] Embodiments of the present application provide a photoelectric device, a preparation method, and an electronic device to improve the device life of the photoelectric device.

[0006] In a first aspect, an embodiment of the present application provides an optoelectronic device, comprising:

[0007] a first electrode and a second electrode arranged opposite to each other,

[0008] A functional layer disposed between the first electrode and the second electrode;

[0009] The material of the first electrode comprises a first alloy, and / or the material of the second electrode comprises a second alloy;

[0010] The mixing entropy of the first alloy is not less than 1.61R, the mixing entropy of the second alloy is not less than 1.61R, and R is a gas constant.

[0011] In one embodiment, the material of the first electrode further includes a first material; and / or

[0012] The material of the second electrode further comprises a second material;

[0013] Wherein, the first material and the second material are independently selected from a doped metal oxide electrode, a composite electrode, a graphene electrode, a carbon nanotube electrode, a metal element electrode or an alloy electrode; the material of the doped metal oxide electrode includes one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, aluminum-doped magnesium oxide, and cadmium-doped zinc oxide; the composite electrode includes AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, Ca / Al, LiF / Ca, LiF / Al, BaF2 / Al, CsF / Al, CaCO3 / Al or BaF2 / Ca / Al, the material of the metal single substance electrode includes one or more of Ag, Ni, Pt, Au, Ir, Cu, Mo, Al, Ca, Mg and Ba, and the alloy electrode includes Au:Mg alloy electrode or Ag:Mg alloy electrode; and / or

[0014] The thickness of the first electrode is 40-100 nm; and / or

[0015] The thickness of the second electrode is 40-100 nm.

[0016] In one embodiment, the material of the first electrode includes the first alloy and the first material, and the mass ratio of the first material to the first alloy is 1:(0.001-0.2); and / or

[0017] The material of the second electrode includes the second alloy and the second material, and the mass ratio of the second material to the second alloy is 1:(0.001-0.2).

[0018] In one embodiment, the metal elements in the first alloy are selected from at least five of Group IA metals, Group IIA metals, Group IIIA metals, Group IVA metals, Group VA metals and transition metals, and / or the mixing entropy of the first alloy is not less than 1.61R, where R is a gas constant and the value of R is 8.314; and / or

[0019] The metal elements in the second alloy are selected from at least five of Group IA metals, Group IIA metals, Group IIIA metals, Group IVA metals, Group VA metals and transition metals, and / or the mixing entropy of the second alloy is not less than 1.61R, where R is the gas constant and the value of R is 8.314.

[0020] In one embodiment, the metal elements in the first alloy are selected from at least five of Co, Cr, Fe, Ni, Mn, Al, Ti, V, Cu, Al and Ge; and / or

[0021] The molar percentage of each metal element in the first alloy is 5% to 35%;

[0022] The metal elements in the second alloy are selected from at least five of Co, Cr, Fe, Ni, Mn, Al, Ti, V, Cu, Al and Ge; and / or

[0023] The molar percentage of each metal element in the second alloy is 5% to 35%.

[0024] In one embodiment, the first alloy is selected from AlCoCrCuFeNi, TiZrNbHfTa, FeCoNiCrMn, AlCrCuNiFeCo, CoCrFeMnNi; and / or

[0025] The second alloy is selected from AlCoCrCuFeNi, TiZrNbHfTa, FeCoNiCrMn, AlCrCuNiFeCo, CoCrFeMnNi.

[0026] In one embodiment, the functional layer includes a light-emitting layer, and the light-emitting layer includes one or more of an organic light-emitting material and a quantum dot light-emitting material, and the organic light-emitting material includes one or more of 4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridine iridium(III), 4,4',4"-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridine iridium, diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, thermally activated delayed materials, polymers containing BN covalent bonds, hybrid localized charge transfer excited state materials, exciplex light-emitting materials, polyacetylene and its derivatives, polyparaphenylene and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives;The quantum dot luminescent material includes one or more of a single structure quantum dot, a core-shell structure quantum dot and a perovskite semiconductor material. The material of the single structure quantum dot, the core material of the core-shell structure quantum dot and the shell material of the core-shell structure quantum dot are independently selected from one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds and I-III-VI group compounds. The II-VI group compounds include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, Zn STe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, and the IV-VI group compound includes SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, One or more of PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe, the III-V group compound includes GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlN As, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb, the I-III-VI group compound includes one or more of CuInS2, CuInSe2 and AgInS2; the perovskite semiconductor material includes a doped or undoped inorganic perovskite semiconductor or an organic-inorganic hybrid perovskite semiconductor, and the general structural formula of the inorganic perovskite semiconductor is AMX3, wherein A is Cs; + ions, M is a divalent metal cation, including Pb 2+ Sn 2+ , Cu 2+ 、Ni2+ 、Cd 2+ Cr 2+ , Mn 2 + 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl - Br - ,I - One or more of; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, wherein B is an organic amine cation, including CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation, including Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl - Br - ,I - One or more of; and / or

[0027] The functional layer comprises an electronic functional layer, the material of the electronic functional layer is selected from one or more of inorganic electronic functional materials and organic electronic functional materials, the inorganic electronic functional material is selected from one or more of first doped metal oxide particles, first non-doped metal oxide particles, IIB-VIA semiconductor materials, IIIA-VA semiconductor materials and IB-IIIA-VIA semiconductor materials, the organic electronic functional material is selected from one or more of quinoxaline compounds, imidazole compounds, triazine compounds, fluorene-containing compounds, hydroxyquinoline compounds, and fullerene derivatives (PCBM); and / or

[0028] The functional layer comprises a hole functional layer, wherein the material of the hole functional layer is selected from 4,4'-N,N'-dicarbazolyl-biphenyl (CBP), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine (α-NPD), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD), poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine) (Poly-TPD), N,N'-bis(3-methylphenyl)-N,N'-bis(1,1'-biphenyl)-4,4'-diamine (TPD), N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine (TPD), N,N'-bis(3-methylphenyl)-N,N'-bis(1,1'-biphenyl)-4,4'-diamine (TPD), N,N'-bis(1,1'-biphenyl)- -bis(phenyl)-spiro(spiro-TPD), N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine (DNTPD), 4,4',4'-tri(N-carbazolyl)-triphenylamine (TCTA), 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))] (TFB), poly(N-vinylcarbazole) (PVK) and its derivatives, N,N'-di(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl- 4-4'-diamine (NPB), spiro NPB, poly(phenylene vinylene) (PPV), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene] (MEH-PPV), poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene] (MOMO-PPV), 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene (spiro-omeTAD), 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline] (TAPC), 1,3-bis(carbazol-9-yl)benzene (MCP), polyaniline , polypyrrole, poly(p-)phenylene vinylene, aromatic tertiary amine, polynuclear aromatic tertiary amine, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compound, N,N,N',N'-tetraaryl benzidine, PEDOT:PSS and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (HAT-CN), PEDOT, PEDOT:PSS, PEDOT:PSS derivative doped with s-MoO3 (PEDOT:PSS:s-MoO3), 4,4',One or more of 4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), tetracyanoquinodimethane (F4-TCQN), doped graphene, undoped graphene, C60, copper phthalocyanine, second doped metal oxide particles, second undoped metal oxide particles, metal sulfide and metal nitride.

[0029] In a second aspect, an embodiment of the present application provides a method for preparing a photoelectric device.

[0030] In one embodiment, a first electrode is provided, and a functional layer is formed on one side of the first electrode; and

[0031] forming a second electrode on a side of the functional layer away from the first electrode;

[0032] Wherein, the method for preparing the first electrode comprises the steps of: depositing the first material and the first alloy; and / or

[0033] The method for preparing the second electrode comprises the steps of: depositing the second material and the second alloy. In one embodiment, the first material and the first alloy are evaporated, and the mass ratio of the first material to the first alloy is 1:(0.001-0.2), and / or

[0034] Evaporation temperature: 600-1100°C, and / or

[0035] The evaporation rate is: 1 to 5 angstroms / second; and / or

[0036] Vapor depositing the second material and the second alloy, wherein the mass ratio of the second material to the second alloy is 1:(0.001-0.2), and / or

[0037] Evaporation temperature: 600-1100°C, and / or

[0038] The evaporation rate is: 1 to 5 angstroms / second.

[0039] In a third aspect, an embodiment of the present application provides an electronic device including the above-mentioned optoelectronic device, or an optoelectronic device manufactured by the above-mentioned method for manufacturing the optoelectronic device.

[0040] Beneficial effects of the embodiments of the present application:

[0041] In the embodiments of the present application, by doping the first alloy into the first material, and / or doping the second alloy into the second material, the radiation corrosion resistance, oxidation resistance and durability of the first electrode and the second electrode can be improved. The first alloy and the second alloy have a thermal expansion coefficient close to zero and a relatively high strength, which effectively reduces the thermal expansion difference inside the optoelectronic device, thereby greatly improving the device life and the stability of the device on the basis of the existing technology. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0043] Figure 1 It is a schematic diagram of the structure of the optoelectronic device provided in Examples 1-3 of the present application.

[0044] Figure 2 It is a schematic diagram of the structure of the optoelectronic device provided in Examples 4-6 of the present application.

[0045] Reference numerals:

[0046] 1. First electrode; 2. Second electrode; 3. Electron transport layer; 4. Light-emitting layer; 5. Hole injection layer; 6. Hole transport layer. DETAILED DESCRIPTION

[0047] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application. In addition, it should be understood that the specific implementation methods described herein are only used to illustrate and explain the present application, and are not used to limit the present application. In the present application, unless otherwise stated, the directional words such as "upper" and "lower" used generally refer to the upper and lower parts of the device in actual use or working state, specifically the drawing direction in the accompanying drawings; while "inside" and "outside" refer to the outline of the device.

[0048] In this application, "and / or" describes the association relationship of associated objects, indicating that there may be three relationships. For example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone. A and B can be singular or plural.

[0049] In the present application, "at least one" means one or more, and "plurality" means two or more. "At least one", "at least one of the following" or similar expressions refer to any combination of these items, including any combination of single items or plural items. For example, "at least one of a, b, or c", or "at least one of a, b, and c" can all mean: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, c can be single or multiple, respectively.

[0050] In the present application, when a layer is formed "on" another layer, the so-called "on" is a broad concept, which may indicate that the formed another layer is adjacent to the certain layer, or may indicate that there are other spacing structural layers between the another layer and the certain layer. For example, when a second electrode is formed "on" the first carrier functional layer, the so-called "on" may indicate that the formed second electrode is adjacent to the first carrier functional layer, or may indicate that there are other spacing structural layers between the second electrode and the first carrier functional layer, such as a light-emitting layer.

[0051] Various embodiments of the present application may be presented in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity, and should not be understood as a rigid limitation on the scope of the present application; therefore, the range description should be considered to have specifically disclosed all possible sub-ranges and single numerical values ​​within the range. For example, the range description from 1 to 6 should be considered to have specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the range, such as 1, 2, 3, 4, 5 and 6, which apply regardless of the range. In addition, whenever a numerical range is indicated herein, it is meant to include any cited number (fractional or integer) within the indicated range.

[0052] The technical solution of this application is as follows:

[0053] In a first aspect, an embodiment of the present application provides an optoelectronic device, comprising:

[0054] A first electrode and a second electrode disposed opposite to each other; and

[0055] A functional layer is disposed between the first electrode and the second electrode;

[0056] The material of the first electrode includes a first alloy, and / or the material of the second electrode includes a second alloy, the mixing entropy of the first alloy is not less than 1.61R, and the mixing entropy of the second alloy is not less than 1.61R, where R is a gas constant.

[0057] It should be noted that the electrodes of existing light-emitting devices are usually made of materials such as Ag and Al. These materials are structurally unstable and easily oxidized and corroded, especially in high-temperature environments, and are prone to phase change and melting, thereby reducing the stability and service life of the device's light-emitting performance; and the thermal expansion coefficient is large, which is easy to have an adverse effect on other structures, resulting in a reduced lifespan. Therefore, the present application dopes the first material with a first alloy and the second material with a second alloy, and utilizes the characteristics of the first alloy and the second alloy, such as non-corrosion, oxidation resistance, high strength, and low thermal expansion coefficient, to improve the stability and service life of the optoelectronic device.

[0058] In one embodiment, the functional layer includes a light-emitting layer, the light-emitting layer includes one or more of an organic light-emitting material and a quantum dot light-emitting material, the organic light-emitting material includes one or more of 4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridine iridium(III), 4,4',4"-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridine iridium, diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, thermally activated delayed materials, polymers containing BN covalent bonds, hybrid localized charge transfer excited state materials, exciplex light-emitting materials, polyacetylene and its derivatives, polyparaphenylene and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives;The quantum dot luminescent material includes one or more of a single structure quantum dot, a core-shell structure quantum dot and a perovskite semiconductor material. The material of the single structure quantum dot, the core material of the core-shell structure quantum dot and the shell material of the core-shell structure quantum dot are independently selected from one or more of group II-VI compounds, group IV-VI compounds, group III-V compounds and group I-III-VI compounds. The group II-VI compounds include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnST e, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, and Group IV-VI compounds include SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, One or more of PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe, III-V compounds include GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaA lNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb, the I-III-VI group compound includes one or more of CuInS2, CuInSe2 and AgInS2; the perovskite semiconductor material includes a doped or undoped inorganic perovskite semiconductor or an organic-inorganic hybrid perovskite semiconductor, and the general structural formula of the inorganic perovskite semiconductor is AMX3, wherein A is Cs; + ions, M is a divalent metal cation, including Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl - Br - ,I - One or more of; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, wherein B is an organic amine cation, including CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation, including Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl - Br - ,I - One or more of; and / or

[0059] The functional layer includes an electronic functional layer, the material of the electronic functional layer is selected from one or more of inorganic electronic functional materials and organic electronic functional materials, the inorganic electronic functional material is selected from one or more of first doped metal oxide particles, first non-doped metal oxide particles, IIB-VIA semiconductor materials, IIIA-VA semiconductor materials and IB-IIIA-VIA semiconductor materials, and the organic electronic functional material is selected from one or more of quinoxaline compounds, imidazole compounds, triazine compounds, fluorene-containing compounds, hydroxyquinoline compounds, and fullerene derivatives (PCBM); and / or

[0060] The functional layer includes a hole functional layer, and the material of the hole functional layer is selected from 4,4'-N,N'-dicarbazolyl-biphenyl (CBP), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine (α-NPD), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD), poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine) (Poly-TPD), N,N'-bis(3-methylphenyl)-N,N'-bis(1,1'-biphenyl)-4,4'-diamine (TPD). phenyl)-spiro (spiro-TPD), N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine (DNTPD), 4,4',4'-tri(N-carbazolyl)-triphenylamine (TCTA), 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))] (TFB), poly(N-vinylcarbazole) (PVK) and its derivatives, N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4- 4'-diamine (NPB), spiro NPB, poly (phenylene vinylene) (PPV), poly [2-methoxy-5- (2-ethylhexyloxy) -1,4-phenylene vinylene] (MEH-PPV), poly [2-methoxy-5- (3',7'-dimethyloctyloxy) -1,4-phenylene vinylene] (MOMO-PPV), 2,2',7,7'-tetrakis [N,N-di (4-methoxyphenyl) amino] -9,9'-spirobifluorene (spiro-omeTAD), 4,4'-cyclohexyl bis [N,N-di (4-methylphenyl) aniline] (TAPC), 1,3-bis (carbazol-9-yl) benzene (MCP), polyaniline, Polypyrrole, poly(p-)phenylene vinylene, aromatic tertiary amine, polynuclear aromatic tertiary amine, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compound, N,N,N',N'-tetraaryl benzidine, PEDOT:PSS and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (HAT-CN), PEDOT, PEDOT:PSS, PEDOT:PSS derivative doped with s-MoO3 (PEDOT:PSS:s-MoO3), 4,4',One or more of 4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), tetracyanoquinodimethane (F4-TCQN), doped graphene, undoped graphene, C60, copper phthalocyanine, second doped metal oxide particles, second undoped metal oxide particles, metal sulfide and metal nitride.

[0061] It should be noted that the electron functional layer includes an electron injection layer and an electron transport layer, and the hole functional layer includes a hole injection layer and a hole transport layer.

[0062] In some embodiments of the present application, the material of the first electrode includes a first alloy, and the material of the first electrode further includes a first material; and / or

[0063] The material of the second electrode includes a second alloy, and the material of the second electrode further includes a second material;

[0064] The first material and the second material are independently selected from a doped metal oxide electrode, a composite electrode, a graphene electrode, a carbon nanotube electrode, a metal element electrode or an alloy electrode. The material of the doped metal oxide electrode includes one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, aluminum-doped magnesium oxide, and cadmium-doped zinc oxide. The composite electrode includes AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, Ca / Al, LiF / Ca, LiF / Al, BaF2 / Al, CsF / Al, CaCO3 / Al or BaF2 / Ca / Al; the material of the metal single-element electrode includes one or more of Ag, Ni, Pt, Au, Ir, Cu, Mo, Al, Ca, Mg and Ba; the alloy electrode includes Au:Mg alloy electrode or Ag:Mg alloy electrode.

[0065] In some embodiments of the present application, the material of the first electrode includes a first alloy and a first material, and the mass ratio of the first material to the first alloy is 1:(0.001-0.2); and / or

[0066] The material of the second electrode includes a second alloy and a second material, and the mass ratio of the second material to the second alloy is 1:(0.001-0.2).

[0067] In some embodiments of the present application, the metal elements in the first alloy are selected from at least five of Group IA metals, Group IIA metals, Group IIIA metals, Group IVA metals, Group VA metals and transition metals, and / or the mixing entropy of the first alloy is not less than 1.61R, where R is the gas constant and the value of R is 8.314; and / or

[0068] The metal elements in the second alloy are selected from at least five of Group IA metals, Group IIA metals, Group IIIA metals, Group IVA metals, Group VA metals and transition metals, and / or the mixing entropy of the second alloy is not less than 1.61R, where R is the gas constant and the value of R is 8.314.

[0069] In some embodiments of the present application, the metal elements in the first alloy are selected from at least five of Co, Cr, Fe, Ni, Mn, Al, Ti, V, Cu, Al and Ge; and / or

[0070] The molar percentage of each metal element in the first alloy is 5% to 35%;

[0071] The metal elements in the second alloy are selected from at least five of Co, Cr, Fe, Ni, Mn, Al, Ti, V, Cu, Al and Ge; and / or

[0072] The mole percentage of each metal element in the second alloy is 5% to 35%.

[0073] In some embodiments of the present application, the first alloy may be selected from but not limited to AlCoCrCuFeNi, TiZrNbHfTa, FeCoNiCrMn, AlCrCuNiFeCo, CoCrFeMnNi; and / or

[0074] The second alloy may be selected from, but not limited to, AlCoCrCuFeNi, TiZrNbHfTa, FeCoNiCrMn, AlCrCuNiFeCo, CoCrFeMnNi.

[0075] In some embodiments of the present application, the thickness of the first electrode is 40-100 nm; and / or

[0076] The thickness of the second electrode is 40-100 nm.

[0077] In a second aspect, an embodiment of the present application also provides a method for preparing a photoelectric device.

[0078] In some embodiments of the present application, a first electrode is provided, and a functional layer is formed on one side of the first electrode; and

[0079] forming a second electrode on a side of the functional layer away from the first electrode;

[0080] The method for preparing the first electrode comprises the following steps:

[0081] Place the first material and the first alloy in a mass ratio of 1:(0.001-0.2) in a vapor deposition chamber for vapor deposition at a temperature of 600-1100° C. and a rate of 1-5 angstroms / second to obtain a first electrode; and / or

[0082] The preparation method of the second electrode includes the steps of placing the second material and the second alloy with a mass ratio of 1:(0.001-0.2) in a vapor deposition chamber for vapor deposition at a vapor deposition temperature of 600-1100° C. and a vapor deposition rate of 1-5 angstroms / second to obtain the second electrode.

[0083] In some other embodiments of the present application, the functional layer includes a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer and an electron injection layer, and the method for preparing the optoelectronic device specifically includes the steps of:

[0084] Depositing a hole injection layer material on the first electrode, wherein the material of the first electrode includes a first material, to obtain a hole injection layer;

[0085] Depositing a hole transport layer material on the hole injection layer to obtain a hole transport layer;

[0086] Depositing the material of the light-emitting layer on the hole transport layer to obtain the light-emitting layer;

[0087] Depositing an electron transport layer material on the light-emitting layer to obtain an electron transport layer;

[0088] Depositing electron injection layer material on the electron transport layer to obtain an electron injection layer;

[0089] The material of the second electrode is evaporated onto the electron injection layer, wherein the material of the second electrode includes a second alloy and a second material, so as to obtain the second electrode.

[0090] Encapsulation.

[0091] In some other embodiments of the present application, the functional layer includes a hole transport layer, a light emitting layer and an electron transport layer, and the method for preparing the optoelectronic device may also be:

[0092] Depositing a material for an electron transport layer on the first electrode, wherein the material for the first electrode includes a first material, to obtain an electron transport layer;

[0093] Depositing the material of the light-emitting layer on the electron transport layer to obtain the light-emitting layer;

[0094] Depositing hole transport layer materials on the light-emitting layer to obtain a hole transport layer;

[0095] Vapor depositing a material for a second electrode on the hole transport layer, the material for the second electrode comprising a second material and a second alloy, to obtain a second electrode;

[0096] Encapsulation.

[0097] The deposition method can be implemented by technical means well known in the art, including chemical or physical methods. Among them, chemical methods are, for example, chemical vapor deposition, continuous ion layer adsorption and reaction, anodization, electrolytic deposition, and coprecipitation. Physical methods can choose physical plating or solution processing. Specifically, physical plating methods are, for example, thermal evaporation coating, electron beam evaporation coating, magnetron sputtering, multi-arc ion plating, physical vapor deposition, atomic layer deposition, and pulsed laser deposition; solution processing methods are, for example, spin coating, printing, inkjet printing, doctor blade coating, printing, dip-pull method, immersion method, spray coating, roll coating, casting, slit coating, and strip coating. The specific treatment method and treatment conditions can refer to the common methods in the art, which will not be repeated here.

[0098] In a third aspect, an embodiment of the present application further provides an electronic device including an optoelectronic device obtained by the above-mentioned method for preparing an optoelectronic device.

[0099] Electronic devices include, but are not limited to, smart phones, tablet computers, laptop computers, digital cameras, digital video cameras, smart wearable devices, smart weighing electronic scales, car displays, televisions or e-book readers, among which smart wearable devices can be, for example, smart bracelets, smart watches, virtual reality (VR) helmets, etc.

[0100] The present application is described in detail below through specific embodiments. The following embodiments are only partial embodiments of the present application and are not limitations of the present application.

[0101] Example 1

[0102] Reference Figure 1 , this embodiment provides a photoelectric device and a preparation method thereof, the photoelectric device comprises a first electrode 1 (i.e., an anode), a hole injection layer 5, a hole transport layer 6, a light-emitting layer 4, an electron transport layer 3 and a second electrode 2 (i.e., a cathode) which are arranged in sequence, wherein the cathode contains Al and AlCrCuNiFeCo in a mass ratio of 1:0.001;

[0103] Among them, the atomic percentage of each atom of Al CrCuNiFeCo is:

[0104] Aluminum (Al): 20-30%,

[0105] Chromium (Cr): 20-30%,

[0106] Copper (Cu): 10-25%,

[0107] Nickel (Ni): 10-25%,

[0108] Iron (Fe): 10-25%,

[0109] Cobalt (Co): 5-10%;

[0110] In this embodiment, the atomic percentage of Al atoms is 25%, the atomic percentage of Cr atoms is 28%, the atomic percentage of Fe is 18%, the atomic percentage of Ni is 12%, the atomic percentage of Co is 7%, and the atomic percentage of Cu is 10%. The photovoltaic device is a positive type device.

[0111] The method for preparing the optoelectronic device comprises the following steps:

[0112] S1.1, providing a substrate with an ITO anode having a thickness of 80 nm, ultrasonically cleaning the ITO-coated substrate with acetone and ethanol for 15 minutes, then cleaning it again with deionized water, then drying it on a hot plate at 150° C. for 10 minutes, and finally irradiating it with ultraviolet light for 20 minutes to improve the work function and surface energy of ITO;

[0113] S1.2. In a nitrogen atmosphere at room temperature and pressure, spin-coat a PEDOT:PSS material with a mass concentration of 2.8% on the anode at a spin-coating speed of 3000 rpm for 30 seconds and anneal at 150°C for 20 minutes to obtain a hole injection layer with a thickness of 20 nm.

[0114] S1.3, spin coating a TFB-chlorobenzene solution with a concentration of 6.5 mg / mL on the hole injection layer at a spin coating speed of 3000 rpm for 30 seconds, and annealing at 120° C. for 20 minutes to obtain a hole transport layer with a thickness of 20 nm;

[0115] S1.4, spin coating the CdZnSe quantum dot material with a concentration of 10 mg / mL on the hole transport layer at a spin coating speed of 1500 rpm for 30 s, and annealing at 100°C for 5 min to obtain a light-emitting layer;

[0116] S1.5, spin coating a ZnO-ethanol solution with a concentration of 20 mg / mL on the light-emitting layer at a spin coating speed of 4000 rpm for 30 s, and annealing at 80° C. for 10 min to obtain an electron transport layer with a thickness of 70 nm;

[0117] S1.6. Place Al and AlCrCuNiFeCo in a crucible with a mass ratio of 1:0.001, put it into a evaporation chamber, and evaporate them on the electron transport layer at a evaporation rate of 3 angstroms / second for 100 seconds. The evaporation temperature is 850°C, and a cathode with a thickness of 70 nm is obtained by evaporation.

[0118] Encapsulation is performed to obtain an optoelectronic device.

[0119] Example 2

[0120] This embodiment provides a photoelectric device and a method for preparing the same. Compared with the photoelectric device in Example 1, the difference of the photoelectric device in this embodiment is that the cathode contains Al and AlCrCuNiFeCo in a mass ratio of 1:0.09. Compared with the method for preparing the photoelectric device in Example 1, the difference of the method for preparing the photoelectric device in this embodiment is that step S1.6 is replaced by "Al and AlCrCuNiFeCo are placed in a crucible in a mass ratio of 1:0.09, and placed in a evaporation chamber, and evaporated on the electron transport layer at a evaporation rate of 3 angstroms / second for 100 seconds, and the evaporation temperature is 850°C, and the evaporation obtains a cathode with a thickness of 70nm".

[0121] Example 3

[0122] This embodiment provides a photoelectric device and a method for preparing the same. Compared with the photoelectric device in Embodiment 1, the photoelectric device in this embodiment is different in that the mass ratio of Al and AlCrCuNiFeCo contained in the cathode is 1:0.2.

[0123] Compared with the preparation method of the optoelectronic device in Example 1, the difference of the preparation method of the optoelectronic device in this embodiment is that: step S1.6 is replaced by "Al and AlCrCuNiFeCo are placed in a crucible with a mass ratio of 1:0.2, put into a evaporation chamber, and evaporate on the electron transport layer at a evaporation rate of 3 angstroms / second for 100 seconds. The evaporation temperature is 850°C, and the evaporation obtains a cathode with a thickness of 70 nm".

[0124] Example 4

[0125] Reference Figure 2 , this embodiment provides a photoelectric device and a preparation method thereof, the photoelectric device comprising a first electrode 1 (i.e., cathode), an electron transport layer 3, a light-emitting layer 4, a hole transport layer 6, a hole injection layer 5 and a second electrode 2 (i.e., anode) arranged in sequence, wherein the anode contains ITO and Al CoCrCuFeNi in a mass ratio of 1:0.001;

[0126] Among them, the atomic percentage of each atom of Al, Co, Cr, Cu, Fe, Ni is:

[0127] Aluminum (Al): 20-30%,

[0128] Chromium (Cr): 20-30%,

[0129] Copper (Cu): 10-25%,

[0130] Nickel (Ni): 10-25%,

[0131] Iron (Fe): 10-25%,

[0132] Cobalt (Co): 5-10%;

[0133] In this embodiment, the atomic percentage of Al atoms is 25%, the atomic percentage of Co atoms is 5%, the atomic percentage of Cr atoms is 25%, the atomic percentage of Cu atoms is 12%, the atomic percentage of Fe atoms is 21%, and the atomic percentage of Ni atoms is 12%. The photovoltaic device is an inverted device.

[0134] The method for preparing the optoelectronic device comprises the following steps:

[0135] S1.1, providing a substrate with an ITO cathode having a thickness of 70 nm, ultrasonically cleaning the Al-plated substrate with acetone and ethanol for 15 min, then cleaning it again with deionized water, then drying it on a hot plate at 150° C. for 10 min, and finally irradiating it with ultraviolet light for 20 min to improve the work function and surface energy of ITO;

[0136] S1.2, spin coating a ZnO-ethanol solution with a concentration of 20 mg / mL on the cathode at a spin coating speed of 4000 rpm for 30 s, and annealing at 80° C. for 10 min to obtain an electron transport layer with a thickness of 70 nm;

[0137] S1.3, spin coating CdZnSe blue light quantum dots with a concentration of 10 mg / mL on the electron transport layer at a spin coating speed of 1500 rpm for 30 s, and annealing at 100°C for 5 min to obtain a light-emitting layer;

[0138] S1.4, spin coating a TFB-chlorobenzene solution with a concentration of 6.5 mg / mL on the light-emitting layer at a spin coating speed of 3000 rpm for 30 seconds, and annealing at 120° C. for 20 minutes to obtain a hole transport layer with a thickness of 20 nm;

[0139] S1.5, spin coating a PEDOT:PSS material with a mass concentration of 2.8% on the hole transport layer at a spin coating speed of 3000 rpm for 30 seconds, and annealing at 150° C. for 20 minutes to obtain a hole injection layer with a thickness of 20 nm;

[0140] S1.6. Place Al and AlCoCrCuFeNi in a crucible with a mass ratio of 1:0.001, put it into a evaporation chamber, and evaporate them on the hole injection layer at a speed of 3 angstroms / second for 100 seconds. The evaporation temperature is 850°C to obtain an anode with a thickness of 100 nm.

[0141] Encapsulation is performed to obtain an optoelectronic device.

[0142] Example 5

[0143] This embodiment provides a photoelectric device and a method for preparing the same. Compared with the photoelectric device in Embodiment 4, the photoelectric device in this embodiment is different in that the cathode contains ITO and Al CoCrCuFeNi in a mass ratio of 1:0.09.

[0144] Compared with the preparation method of the optoelectronic device in Example 4, the difference of the preparation method of the optoelectronic device in this embodiment is that: step S1.6 is replaced by "Put ITO and Al CoCrCuFeNi in a mass ratio of 1:0.09 in a crucible, put it into a evaporation chamber, and evaporate on the hole injection layer at a speed of 3 angstroms / second for 100 seconds. The evaporation temperature is 850°C to obtain an anode with a thickness of 100 nm."

[0145] Example 6

[0146] This embodiment provides a photoelectric device and a method for preparing the same. Compared with the photoelectric device in Embodiment 4, the photoelectric device in this embodiment is different in that the cathode contains ITO and Al CoCrCuFeNi in a mass ratio of 1:0.2.

[0147] Compared with the preparation method of the optoelectronic device in Example 4, the difference of the preparation method of the optoelectronic device in this embodiment is that: step S1.6 is replaced by "ITO and Al CoCrCuFeNi are placed in a crucible with a mass ratio of 1:0.2, placed in a evaporation chamber, and evaporated on the hole injection layer at a speed of 3 angstroms / second for 100 seconds. The evaporation temperature is 850°C to obtain an anode with a thickness of 100 nm."

[0148] Comparative Example 1

[0149] This embodiment provides a photoelectric device and a method for preparing the same. Compared with the photoelectric device in Embodiment 1, the photoelectric device in this embodiment is different in that the material of the cathode is Al.

[0150] Compared with the preparation method of the optoelectronic device in Example 1, the difference of the preparation method of the optoelectronic device in this embodiment is that: step S1.6 is replaced by "placing Al into the evaporation chamber, and evaporating it on the electron transport layer at a speed of 1 angstrom / second for 100 seconds to obtain a cathode with a thickness of 100 nm".

[0151] Comparative Example 2

[0152] This embodiment provides a photoelectric device and a method for preparing the same. Compared with the photoelectric device in Embodiment 4, the photoelectric device in this embodiment is different in that the material of the anode is Al.

[0153] Compared with the preparation method of the optoelectronic device in Example 4, the difference of the preparation method of the optoelectronic device in this embodiment is that: step S1.6 is replaced by "putting Al into the evaporation chamber, and evaporating it on the hole injection layer at a speed of 1 angstrom / second for 100s to obtain an anode with a thickness of 100nm".

[0154] Device Performance

[0155] Performance test: In a dark box, a voltage is output to the device to make it conductive and luminous, and the luminous characteristics of the devices prepared in the device examples and comparative examples are recorded. Specific device performance data are shown in Table 1.

[0156] Table 1:

[0157]

[0158]

[0159] From Table 1 we can see that:

[0160] Compared with Comparative Examples 1 and 2, the photoelectric devices of Examples 1-6 all have longer lifespans, and the degree of improvement is more than twenty times that of the comparative examples, and the maximum is close to forty-two times. The reason may be that the addition of the first alloy and the second alloy in the anode material and the cathode material improves the corrosion resistance, oxidation resistance and durability of the electrode, thereby improving the device lifespan and luminescence stability. By comparing Examples 1-3 and Examples 4-6 with Comparative Examples 1 and 2, it can be seen that the addition of the first alloy and the second alloy significantly improves the lifespan of both the upright device and the inverted device, and the degree of improvement is almost the same.

[0161] Compared with Comparative Examples 1 and 2, the luminous efficiency of the photoelectric devices of Examples 1-6 is improved by 3.42-9.94, the minimum luminous efficiency is nearly doubled, and the maximum luminous efficiency is nearly six times higher than that of the comparative examples. This is mainly because the thermal expansion coefficient of the electrode is reduced after the anode material or the cathode material is doped with the first alloy or the second alloy, the thermal expansion difference inside the device is reduced, and the luminous efficiency is improved.

[0162] The embodiments of the present application are introduced in detail above. Specific examples are used in this article to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method and core idea of ​​the present application. At the same time, for technical personnel in this field, according to the idea of ​​the present application, there will be changes in the specific implementation method and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A photoelectric device, comprising: The first electrode and the second electrode are arranged opposite to each other, and the functional layer is arranged between the first electrode and the second electrode, characterized in that: The material of the first electrode includes a first alloy, and / or, The material of the second electrode includes a second alloy; The mixing entropy of the first alloy is not less than 1.61R, the mixing entropy of the second alloy is not less than 1.61R, and R is a gas constant.

2. The optoelectronic device according to claim 1, characterized in that: The material of the first electrode further comprises a first material; and / or The material of the second electrode further comprises a second material; Wherein, the first material and the second material are independently selected from a doped metal oxide electrode, a composite electrode, a graphene electrode, a carbon nanotube electrode, a metal element electrode or an alloy electrode; the material of the doped metal oxide electrode includes one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, aluminum-doped magnesium oxide, and cadmium-doped zinc oxide; the composite electrode includes AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, Ca / Al, LiF / Ca, LiF / Al, BaF2 / Al, CsF / Al, CaCO3 / Al or BaF2 / Ca / Al, the material of the metal single substance electrode includes one or more of Ag, Ni, Pt, Au, Ir, Cu, Mo, Al, Ca, Mg and Ba, and the alloy electrode includes Au:Mg alloy electrode or Ag:Mg alloy electrode; and / or The thickness of the first electrode is 40-100 nm; and / or The thickness of the second electrode is 40-100 nm.

3. The optoelectronic device according to claim 2, characterized in that: The material of the first electrode includes the first alloy and the first material, and the mass ratio of the first material to the first alloy is 1:(0.001-0.2); and / or The material of the second electrode includes the second alloy and the second material, and the mass ratio of the second material to the second alloy is 1:(0.001-0.2).

4. The optoelectronic device according to any one of claims 1 to 3, characterized in that: The metal elements in the first alloy are selected from at least five of Group IA metals, Group IIA metals, Group IIIA metals, Group IVA metals, Group VA metals and transition metals, and / or the mixing entropy of the first alloy is not less than 1.61R, where R is a gas constant and the value of R is 8.314; and / or The metal elements in the second alloy are selected from at least five of Group IA metals, Group IIA metals, Group IIIA metals, Group IVA metals, Group VA metals and transition metals, and / or the mixing entropy of the second alloy is not less than 1.61R, where R is the gas constant and the value of R is 8.

314.

5. The optoelectronic device according to claim 4, characterized in that: The metal elements in the first alloy are selected from at least five of Co, Cr, Fe, Ni, Mn, Al, Ti, V, Cu, Al and Ge; and / or The molar percentage of each metal element in the first alloy is 5% to 35%; The metal elements in the second alloy are selected from at least five of Co, Cr, Fe, Ni, Mn, Al, Ti, V, Cu, Al and Ge; and / or The molar percentage of each metal element in the second alloy is 5% to 35%.

6. The optoelectronic device according to claim 5, characterized in that: The first alloy is selected from AlCoCrCuFeNi, TiZrNbHfTa, FeCoNiCrMn, AlCrCuNiFeCo, CoCrFeMnNi; and / or The second alloy is selected from AlCoCrCuFeNi, TiZrNbHfTa, FeCoNiCrMn, AlCrCuNiFeCo, CoCrFeMnNi.

7. The optoelectronic device according to claim 1, characterized in that: The functional layer includes a light-emitting layer, and the material of the light-emitting layer includes one or more of an organic light-emitting material and a quantum dot light-emitting material, and the organic light-emitting material includes one or more of 4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridine iridium(III), 4,4',4"-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridine iridium, diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, thermally activated delayed materials, polymers containing covalent bonds of BN, hybrid localized charge transfer excited state materials, exciplex light-emitting materials, polyacetylene and its derivatives, polyparaphenylene and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives;The quantum dot luminescent material includes one or more of a single structure quantum dot, a core-shell structure quantum dot and a perovskite semiconductor material. The material of the single structure quantum dot, the core material of the core-shell structure quantum dot and the shell material of the core-shell structure quantum dot are independently selected from one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds and I-III-VI group compounds. The II-VI group compounds include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, Zn STe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, and the IV-VI group compound includes SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, One or more of PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe, the III-V group compound includes GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlN As, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb, the I-III-VI group compound includes one or more of CuInS2, CuInSe2 and AgInS2; the perovskite semiconductor material includes a doped or undoped inorganic perovskite semiconductor or an organic-inorganic hybrid perovskite semiconductor, and the general structural formula of the inorganic perovskite semiconductor is AMX3, wherein A is Cs; + ions, M is a divalent metal cation, including Pb 2 + Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl - Br - ,I - One or more of; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, wherein B is an organic amine cation, including CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation, including Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl - Br - ,I - One or more of; and / or The functional layer comprises an electronic functional layer, the material of the electronic functional layer is selected from one or more of inorganic electronic functional materials and organic electronic functional materials, the inorganic electronic functional material is selected from one or more of first doped metal oxide particles, first non-doped metal oxide particles, IIB-VIA semiconductor materials, IIIA-VA semiconductor materials and IB-IIIA-VIA semiconductor materials, the organic electronic functional material is selected from one or more of quinoxaline compounds, imidazole compounds, triazine compounds, fluorene-containing compounds, hydroxyquinoline compounds, and fullerene derivatives (PCBM); and / or The functional layer comprises a hole functional layer, wherein the material of the hole functional layer is selected from 4,4'-N,N'-dicarbazolyl-biphenyl (CBP), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine (α-NPD), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD), poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine) (Poly-TPD), N,N'-bis(3-methylphenyl)-N,N'-bis(1,1'-biphenyl)-4,4'-diamine (TPD), N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine (TPD), N,N'-bis(3-methylphenyl)-N,N'-bis(1,1'-biphenyl)-4,4'-diamine (TPD), N,N'-bis(1,1'-biphenyl)- -bis(phenyl)-spiro(spiro-TPD), N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine (DNTPD), 4,4',4'-tri(N-carbazolyl)-triphenylamine (TCTA), 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))] (TFB), poly(N-vinylcarbazole) (PVK) and its derivatives, N,N'-di(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl- 4-4'-diamine (NPB), spiro NPB, poly(phenylene vinylene) (PPV), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene] (MEH-PPV), poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene] (MOMO-PPV), 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene (spiro-omeTAD), 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline] (TAPC), 1,3-bis(carbazol-9-yl)benzene (MCP), polyaniline , polypyrrole, poly(p-)phenylene vinylene, aromatic tertiary amine, polynuclear aromatic tertiary amine, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compound, N,N,N',N'-tetraaryl benzidine, PEDOT:PSS and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (HAT-CN), PEDOT, PEDOT:PSS, PEDOT:PSS derivative doped with s-MoO3 (PEDOT:PSS:s-MoO3), 4,4',One or more of 4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), tetracyanoquinodimethane (F4-TCQN), doped graphene, undoped graphene, C60, copper phthalocyanine, second doped metal oxide particles, second undoped metal oxide particles, metal sulfide and metal nitride.

8. A method for preparing a photoelectric device, characterized in that: providing a first electrode, and forming a functional layer on one side of the first electrode; and forming a second electrode on a side of the functional layer away from the first electrode; Wherein, the method for preparing the first electrode comprises the steps of: depositing the first material and the first alloy; and / or The method for preparing the second electrode comprises the steps of: depositing the second material and a second alloy.

9. The method for preparing a photoelectric device according to claim 8, characterized in that: Vapor depositing the first material and the first alloy, wherein the mass ratio of the first material to the first alloy is 1:(0.001-0.2), and / or Evaporation temperature: 600-1100°C, and / or The evaporation rate is: 1 to 5 angstroms / second; and / or Vapor depositing the second material and the second alloy, wherein the mass ratio of the second material to the second alloy is 1:(0.001-0.2), and / or Evaporation temperature: 600-1100°C, and / or The evaporation rate is: 1 to 5 angstroms / second.

10. An electronic device, characterized in that: The invention comprises the optoelectronic device according to any one of claims 1 to 7, or the optoelectronic device prepared by the method for preparing the optoelectronic device according to claim 8 or 9.

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