Quantum dot patterning anti-counterfeit label and preparation method thereof

Abstract

The invention discloses a quantum dot patterning anti-counterfeit label and a preparation method thereof, and belongs to the technical field of anti-counterfeit. The quantum dot patterning anti-counterfeit label comprises a substrate; a quantum dot patterned pixel layer is arranged on the substrate; the quantum dot patterned pixel layer comprises quantum dot pixel units; the quantum dot pixel units are loaded with patterned anti-counterfeiting information; the quantum dot pixel unit comprises at least one of a blue light pixel unit, a green light pixel unit and a red light pixel unit. Quantum dot patterning information is not easy to perceive by human eyes under a sunlight light source, and bright-colored blue, green and red combined pixel patterns can be emitted under extra irradiation excitation of a high-energy light source, so that anti-counterfeiting and easy-to-check functions are well achieved.

Description

Technical Field

[0001] The present application relates to a quantum dot patterned anti-counterfeiting label and a preparation method thereof, and belongs to the field of anti-counterfeiting technology. Background Art

[0002] Quantum dots (QD) are an emerging semiconductor nanocrystalline material, also known as "artificial atoms". The electrons and holes in quantum dots are spatially confined, forming an energy level structure similar to that of atoms, which is what we call the quantum confinement effect. It is this unique property that makes quantum dots have the advantages of precise and adjustable spectrum, narrow half-width, high quantum efficiency, and wide color gamut. Quantum dots are considered to be the best color performance solution and color conversion material at present. Displays using quantum dot technology can significantly improve the color gamut range, present richer colors, improve the vividness of the picture, and truly restore the colors of nature. In addition to being used in the field of backlight display, the unique properties of quantum dots are also particularly useful in anti-counterfeiting labels and the construction of smart label databases.

[0003] The synthesis of quantum dots has experienced several technological breakthroughs. Initially, quantum dot synthesis chemistry achieved a breakthrough between 1990 and 1993, and a "metal organic-coordinating solvent-high temperature" synthesis route emerged. This method was invented at Bell Laboratory and matured in Moungi Bawendi's research group at MIT. It uses dimethyl cadmium as a cadmium source to synthesize high-quality cadmium selenide quantum dots at high temperature (about 300 degrees Celsius) in an organic coordinating solvent. However, since this synthesis route is based on the "metal organic vapor deposition" method and uses highly toxic and explosive raw materials (dimethyl cadmium), it is not conducive to large-scale promotion. This situation was broken by Chinese scholar Professor Peng Xiaogang around 2000. Peng Xiaogang joined Paul Alivisatos' research group as a postdoctoral fellow in 1994, and joined the Department of Chemistry at the University of Arkansas in 1999 to start independent research. Based on a deep understanding of the reaction mechanism, Peng Xiaogang's research group used stable and readily available oxides or carboxylates as precursors to develop a "green" synthesis route based on safe and non-toxic non-coordinating solvents. The development of new synthetic routes has made the synthesis of quantum dots gradually move towards laboratories around the world and be promoted in the industry. Zhijing Technology has achieved large-scale industrialization in the synthesis method of in-situ preparation of perovskite quantum dots, making perovskite blue, green, and red quantum dot polymer powder materials easily available and having a good material life.

[0004] The processing method of quantum dot materials is generally to mix liquid photosensitive resin or thermosetting resin with a certain viscosity for coating, inkjet, photolithography and other processing processes, which can be well processed for the required productization and patterning. The inkjet printing method has great advantages in large-scale pattern design and high-throughput processing, and has a very mature production line.

[0005] As global business activities become more frequent, the harm of counterfeiting should be taken seriously. Counterfeit daily consumer goods affect consumers' experience, counterfeit drugs pose a major threat to patient safety and public health, and counterfeit high-tech products cause significant economic losses in developed and underdeveloped countries. The update and upgrade of anti-counterfeiting technology is a powerful blow to counterfeit products. In the global economy, security and human health, the demand for the next generation of anti-counterfeiting technology is huge and growing. At this time, the development of a graphical anti-counterfeiting label that can take into account both easy detection and anti-counterfeiting capabilities is in line with the requirements of the times. Summary of the invention

[0006] To solve the above problems, the present invention provides a quantum dot patterned anti-counterfeiting label and a preparation method thereof. The pattern information is not easily detected by the human eye under sunlight after inkjet curing at low concentration, but can emit a pattern of three combined pixels of bright colors of blue, green and red under the additional irradiation and excitation of a high-energy light source, thereby playing a good anti-counterfeiting and easy-to-check function.

[0007] In order to achieve the above-mentioned invention object, the present application adopts the following technical solutions:

[0008] In one aspect, the present application provides a quantum dot patterned anti-counterfeiting label, the quantum dot patterned anti-counterfeiting label comprising a substrate;

[0009] A quantum dot patterned pixel layer is provided on the substrate;

[0010] The quantum dot patterned pixel layer includes quantum dot pixel units;

[0011] The quantum dot pixel unit carries patterned anti-counterfeiting information;

[0012] The quantum dot pixel unit includes at least one of a blue light pixel unit, a green light pixel unit, and a red light pixel unit.

[0013] Optionally, the quantum dot pixel unit does not display the patterned anti-counterfeiting information under a sunlight light source.

[0014] Optionally, the quantum dot pixel unit displays the patterned anti-counterfeiting information under the irradiation excitation of a high-energy light source.

[0015] Optionally, the light emission band of the high energy light source is 200-400nm.

[0016] Optionally, the quantum dot patterned pixel layer is sequentially inkjet printed and photocured and adhered to the surface of the substrate.

[0017] Optionally, the quantum dot patterned pixel layer is formed by combining the quantum dot pixel units.

[0018] Optionally, the thickness of the quantum dot patterned pixel layer is 100-500 μm.

[0019] Optionally, the quantum dot pixel unit is formed by a combination of at least one of the blue light pixel unit, the green light pixel unit, and the red light pixel unit.

[0020] In a second aspect, the present application provides a method for preparing the above-mentioned quantum dot patterned anti-counterfeiting label, comprising the following steps:

[0021] (1) stirring, dissolving, and spraying a mixture containing a quantum dot system, a polymer, and a solvent in sequence to obtain a quantum dot polymer powder I;

[0022] (2) performing secondary growth on the quantum dot polymer powder I to obtain quantum dot polymer powder II;

[0023] (3) stirring and dissolving a mixture containing the quantum dot polymer powder II, oligomers, monomers, solvents, and initiators to obtain quantum dot ink;

[0024] (4) Inkjet printing the quantum dot ink onto a substrate, and then photocuring the substrate to obtain the quantum dot patterned anti-counterfeiting label.

[0025] Optionally, in step (1), the quantum dot system includes CsPbCl 3 MAPbCl 3 , FAPbCl 3 、CsSnCl 3 、MASnCl 3 、FASnCl 3 、CsPbBr 3 MAPbBr 3 , FAPbBr 3 , CsSnBr 3 、MASnBr 3 、FASnBr 3 , CsPbI 3 MAPbI 3 , FAPbI 3 、CsSnI 3 、MASnI 3 、FASnI 3 At least one of .

[0026] Optionally, in step (1), the polymer comprises an organic polymer.

[0027] Optionally, the organic polymer includes at least one of polycarbonate (PC), polymethyl methacrylate (PMMA), polyvinylidene fluoride (PVDF), ethylene-vinyl alcohol copolymer (EVOH), acrylonitrile-butadiene-styrene copolymer (ABS), and polyvinylidene chloride (PVDC).

[0028] Optionally, in step (1) and step (3), the solvent independently includes at least one of N,N-dimethylformamide (DMF), dimethyl sulfoxide (DMSO), and propylene glycol methyl ether acetate (PGMEA).

[0029] Optionally, in step (1), the mixing mass ratio of the quantum dot system, polymer and solvent is 1-4:3-10:1000-5000.

[0030] Optionally, in step (1), the temperature of the spray is 60 to 100° C.;

[0031] The gas pressure of the spray is 70-100 MPa;

[0032] The fan frequency of the spray is 20-50 Hz.

[0033] Optionally, in step (1), the temperature of the spray is independently selected from any value among 60°C, 65°C, 70°C, 75°C, 80°C, 85°C, 90°C, 95°C, 100°C or any range between two thereof.

[0034] Optionally, the gas pressure of the spray is independently selected from any value among 70 MPa, 75 MPa, 80 MPa, 85 MPa, 90 MPa, 95 MPa, 100 MPa, or any range value therebetween.

[0035] Optionally, the fan frequency of the spray is independently selected from any value among 20 Hz, 25 Hz, 30 Hz, 35 Hz, 40 Hz, 45 Hz, 50 Hz or any range value therebetween.

[0036] Optionally, in step (2), the temperature of the secondary growth is 80 to 130° C.;

[0037] The secondary growth time is 5 to 20 minutes.

[0038] Optionally, in step (2), the temperature of the secondary growth is independently selected from any value among 80°C, 85°C, 90°C, 95°C, 100°C, 105°C, 110°C, 115°C, 120°C, 125°C, 130°C or any range between two of them.

[0039] Optionally, the secondary growth time is independently selected from any value among 5 min, 8 min, 10 min, 13 min, 15 min, 18 min, 20 min, or any range between two values.

[0040] Optionally, in step (3), the oligomer includes at least one of aliphatic polyurethane acrylate, aliphatic polyurethane hexaacrylate, tin-free aliphatic polyurethane diacrylate, aromatic polyurethane acrylate, aromatic polyurethane hexaacrylate, fluorine-modified polyurethane acrylate, silicone-modified polyurethane acrylate, 2-hydroxy-3-phenoxypropyl acrylate, epoxy acrylate, modified epoxy acrylate, epoxy methacrylate, and fatty acid-modified epoxy acrylate.

[0041] Optionally, in step (3), the monomer includes at least one of 4-tert-butylcyclohexyl acrylate, methacrylate ethylene urea ethoxylate, m-phenoxybenzyl acrylate, dicyclopentenyl acrylate, dicyclopentenyl ethoxylated acrylate, ethoxylated phenoxy acrylate, 3,3,5-trimethylcyclohexyl acrylate, and o-phenylphenoxyethyl acrylate.

[0042] Optionally, in step (3), the initiator includes at least one of 2-methyl-1-[4-(methylthio)phenyl]-2-morpholinyl]-1-propanone, 2,4,6-trimethylbenzoyl-diphenylphosphine oxide, benzoin dimethyl ether, 2-hydroxy-2-methyl-1-phenyl-1-propanone, 1-hydroxy-cyclohexyl-phenyl ketone, benzophenone, isopropylthioxanthone (2,4 isomer mixture), 4-(N,N-dimethylamino)benzoic acid ethyl ester, 4-(N,N-dimethyl)benzoic acid isooctyl ester, 2-isopropylthioxanthone, 2-benzyl-2-(dimethylamino)-4-morpholine, 4-phenylxyl ketone, and methyl o-benzoylbenzoate.

[0043] Optionally, in step (3), the mixing mass ratio of the quantum dot polymer powder II, oligomer, monomer, solvent and initiator is 1-3:1-4:2-5:5-10:0.1-0.3.

[0044] Optionally, in step (4), the flow rate of the inkjet printing is 20 to 80 ml / min.

[0045] Optionally, in step (4), the flow rate of the inkjet printing is independently selected from any value among 20 ml / min, 30 ml / min, 40 ml / min, 50 ml / min, 80 ml / min or any range between two values.

[0046] Optionally, in step (4), the photocuring is performed using UV blue light.

[0047] Optionally, the wavelength of the UV blue light is 350-400 nm.

[0048] Preferably, the wavelength of the UV blue light is 365 nm.

[0049] Optionally, in step (4), the photocuring time is 1 to 10 seconds.

[0050] Optionally, in step (4), the photocuring time is independently selected from any value among 1s, 2s, 3s, 4s, 6s, 8s, 10s, or a range between any two of them.

[0051] The beneficial effects of this application include:

[0052] (1) The quantum dot patterned anti-counterfeiting label provided in the present application utilizes the fact that the pattern information after inkjet curing at low concentration is not easily detected by the human eye under sunlight, but can emit a pattern of three combined pixels of bright blue, green and red under the additional irradiation and stimulation of a high-energy light source, which plays a good anti-counterfeiting and easy-to-check function; the quantum dot patterned anti-counterfeiting label can be adapted to the application of flexible and stretchable devices, and combined with the rich colors of quantum dots, it can realize patterned information labeling in various colors and establish a more complex smart label database; the quantum dot patterned information constructed in the present application takes into account both easy detectability and anti-counterfeiting capabilities, and can help various raw materials in assembly line operations distinguish and identify product competition judgments of non-main enterprises, thereby improving product competitiveness.

[0053] (2) The present application provides a method for preparing a quantum dot patterned anti-counterfeiting label, which utilizes an in-situ spraying method to obtain quantum dot polymer powder on a large scale. The process is simple, the raw materials are cheap, and the powder performance is excellent. The quantum dot polymer powder is mixed with a UV photosensitive resin to form an ink with controllable viscosity and good compatibility, and can be suitable for large-scale inkjet printing. The inkjet printing method can realize patterned information printing of more than 100 μm, and it is permanently retained after curing. It has a strong bonding force with the bottom material and can meet long-term use requirements. Inkjet printing can achieve assembly line high-throughput printing, with low mass production cost and strong operability. BRIEF DESCRIPTION OF THE DRAWINGS

[0054] Figure 1 Schematic diagram of the design process of the quantum dot patterned anti-counterfeiting label of this application;

[0055] Figure 2 This is a schematic diagram of the design of the green quantum dot patterned anti-counterfeiting label for this application;

[0056] Figure 3 This is a schematic diagram of the design of the red quantum dot patterned anti-counterfeiting label for this application;

[0057] Figure 4 This is a schematic diagram of the design of the blue quantum dot patterned anti-counterfeiting label for this application;

[0058] Figure 5 This is a schematic diagram of the design of the green, red and blue quantum dot patterned anti-counterfeiting label for this application. DETAILED DESCRIPTION

[0059] The present application is described in detail below with reference to embodiments, but the present application is not limited to these embodiments.

[0060] Unless otherwise specified, the raw materials in the examples of this application were purchased through commercial channels.

[0061] Example 1

[0062] Cb 3 Green quantum dot polymer ink for anti-counterfeiting pattern design:

[0063] Figure 2 For the design of green quantum dot patterned anti-counterfeiting labels, first, the five components of quantum dot precursor raw materials, cesium bromide, lead bromide, octylamine bromide, PMMA, and DMF, are weighed, heated, stirred, and mixed according to the mass ratio (4.7:4.3:1:80:1250) to form a stable phase quantum dot polymer precursor solution. The prepared quantum dot polymer precursor solution is transported to the nozzle of the spray equipment through a peristaltic pump and a rubber tube, and is atomized into droplets using high-pressure nitrogen (80MPa), and is subjected to a high-temperature thermal field (70°C) to instantly remove most of the polar solvent, so that the precursor raw materials can be ionized and precipitated and crystallized. The whole process goes through the process of droplet atomization and instant drying in a high-temperature thermal field, forming a microsphere polymer powder that is collected by the cyclone collector of the spray equipment. The obtained microsphere polymer powder was spread on tin foil and placed in a blast oven for high temperature (110°C) baking for 10 minutes to remove the solvent. The crystal structure grew again and the powder turned into green powder. It was cooled to room temperature and ground with an agate mortar. Then, it was sieved and bottled. 3 @PMMA) was mixed with 2g oligomer (fluorinated polyurethane acrylate), 3g monomer (dicyclopentenyl ethoxylated acrylate), 5g solvent (PGMEA), and 0.2g initiator (2-hydroxy-2-methyl-1-phenyl-1-propanone) to prepare ink. Furthermore, the ink was sprayed on a substrate using an inkjet printer, and the droplet size and flow rate (30ml / min) were controlled. After printing, the resin was cured by irradiating with a UV blue light 365nm light source for 3 seconds to obtain an anti-counterfeiting label sample 1.

[0064] Example 2

[0065] CxP 3Green quantum dot polymer ink for anti-counterfeiting pattern design:

[0066] Figure 3 For the design of red quantum dot patterned anti-counterfeiting labels, first, the five components of quantum dot precursor raw materials cesium iodide, lead iodide, octyl iodide ammonium, PMMA, and DMF are weighed, heated, stirred, and mixed according to the mass ratio (4.7:4.3:1:80:1250) to form a stable phase quantum dot polymer precursor solution. The prepared quantum dot polymer precursor solution is transported to the nozzle of the spray equipment through a peristaltic pump and a rubber tube, and is atomized into droplets using high-pressure nitrogen (80MPa), and is subjected to a high-temperature thermal field (70°C) to instantly remove most of the polar solvent, so that the precursor raw materials can be ionized and precipitated and crystallized. The whole process goes through the process of droplet atomization and high-temperature thermal field instant drying to form microsphere polymer powder collected by the cyclone collector of the spray equipment. The obtained microsphere polymer powder was spread on tin foil and placed in a blast oven for high temperature (110°C) baking for 10 min to remove the solvent, and the crystal structure grew again. The powder turned into green powder, cooled to room temperature, ground with an agate mortar, sieved and bottled. Secondly, 0.5 g of quantum dot polymer powder (CsPbI 3 @PMMA) was mixed with 2g oligomer (fluorinated polyurethane acrylate), 3g monomer (dicyclopentenyl ethoxylated acrylate), 5g solvent (PGMEA), and 0.2g initiator (2-hydroxy-2-methyl-1-phenyl-1-propanone) to prepare ink. Furthermore, the ink was sprayed on the substrate using an inkjet printer, and the droplet size and flow rate (30ml / min) were controlled. After printing, the resin was irradiated with a UV blue light 365nm light source for 3 seconds to cure the resin. Anti-counterfeiting label sample 2 was obtained.

[0067] Example 3

[0068] CsPbCl 3 Green quantum dot polymer ink for anti-counterfeiting pattern design:

[0069] Figure 4For the design of blue quantum dot patterned anti-counterfeiting labels, first, the five components of quantum dot precursor raw materials, cesium chloride, lead chloride, octyl ammonium chloride, PMMA, and DMF, are weighed, heated, stirred, and mixed according to the mass ratio (4.7:4.3:1:80:1250) to form a stable phase quantum dot polymer precursor solution. The prepared quantum dot polymer precursor solution is transported to the nozzle of the spray equipment through a peristaltic pump and a rubber tube, and is atomized into droplets using high-pressure nitrogen (80MPa), and is subjected to a high-temperature thermal field (70°C) to instantly remove most of the polar solvent, so that the precursor raw materials can be ionized and precipitated and crystallized. The whole process goes through the process of droplet atomization and high-temperature thermal field instant drying, forming microsphere polymer powder that is collected by the cyclone collector of the spray equipment. The obtained microsphere polymer powder was spread on tin foil and placed in a blast oven for high temperature (110°C) baking for 10 min to remove the solvent, and the crystal structure grew again. The powder turned into green powder, cooled to room temperature, ground with an agate mortar, sieved and bottled. 3 @PMMA) was mixed with 2g oligomer (fluorinated polyurethane acrylate), 3g monomer (dicyclopentenyl ethoxylated acrylate), 5g solvent (PGMEA), and 0.2g initiator (2-hydroxy-2-methyl-1-phenyl-1-propanone) to prepare ink. Furthermore, the ink was sprayed on the substrate using an inkjet printer, and the droplet size and flow rate (30ml / min) were controlled. After printing, the resin was irradiated with a UV blue light 365nm light source for 3 seconds to cure the resin. Anti-counterfeiting label sample 3 was obtained.

[0070] Example 4

[0071] Green, red and blue quantum dot polymers are printed simultaneously with ink for anti-counterfeiting pattern design:

[0072] Figure 5 To design a three-color quantum dot patterned anti-counterfeiting label, first obtain the green, red, and blue quantum dots in Examples 1 to 3 and configure them into three colors of ink. Use an inkjet printer to spray the ink side by side on a substrate, and control the droplet size and flow rate (30 ml / min) for each nozzle. After printing, irradiate with a UV blue light 365nm light source for 3 seconds to cure the resin. Obtain anti-counterfeiting label sample 4.

[0073] The above are only a few embodiments of the present application and do not constitute any form of limitation to the present application. Although the present application is disclosed as above with preferred embodiments, it is not intended to limit the present application. Any technician familiar with the profession, without departing from the scope of the technical solution of the present application, using the technical content disclosed above to make slight changes or modifications are equivalent to equivalent implementation cases and fall within the scope of the technical solution.

Claims

1. A quantum dot patterned anti-counterfeiting label, characterized in that: The quantum dot patterned anti-counterfeiting label includes a substrate; A quantum dot patterned pixel layer is provided on the substrate; The quantum dot patterned pixel layer includes quantum dot pixel units; The quantum dot pixel unit carries patterned anti-counterfeiting information; The quantum dot pixel unit includes at least one of a blue light pixel unit, a green light pixel unit, and a red light pixel unit.

2. A quantum dot patterned anti-counterfeiting label according to claim 1, characterized in that: The quantum dot pixel unit does not display the patterned anti-counterfeiting information under a sunlight light source; Preferably, the quantum dot pixel unit displays the patterned anti-counterfeiting information under the irradiation excitation of a high-energy light source; Preferably, the light emission wavelength range of the high energy light source is 200-400 nm.

3. The quantum dot patterned anti-counterfeiting label according to claim 1, characterized in that: The quantum dot patterned pixel layer is sequentially inkjet printed and photocured, and adhered to the surface of the substrate; Preferably, the quantum dot patterned pixel layer is formed by combining the quantum dot pixel units; Preferably, the thickness of the quantum dot patterned pixel layer is 100 to 500 μm; Preferably, the quantum dot pixel unit is formed by a combination of at least one of the blue light pixel unit, the green light pixel unit and the red light pixel unit.

4. The method for preparing a quantum dot patterned anti-counterfeiting label according to any one of claims 1 to 3, characterized in that: The steps include: (1) stirring, dissolving, and spraying a mixture containing a quantum dot system, a polymer, and a solvent in sequence to obtain a quantum dot polymer powder I; (2) performing secondary growth on the quantum dot polymer powder I to obtain quantum dot polymer powder II; (3) stirring and dissolving a mixture containing the quantum dot polymer powder II, oligomers, monomers, solvents, and initiators to obtain quantum dot ink; (4) Inkjet printing the quantum dot ink onto a substrate, and then photocuring the substrate to obtain the quantum dot patterned anti-counterfeiting label.

5. The method for preparing a quantum dot patterned anti-counterfeiting label according to claim 4, characterized in that: In step (1), the quantum dot system includes at least one of CsPbCl3, MAPbCl3, FAPbCl3, CsSnCl3, MASnCl3, FASnCl3, CsPbBr3, MAPbBr3, FAPbBr3, CsSnBr3, MASnBr3, FASnBr3, CsPbI3, MAPbI3, FAPbI3, CsSnI3, MASnI3, and FASnI3.

6. The method for preparing a quantum dot patterned anti-counterfeiting label according to claim 4, characterized in that: In step (1), the polymer comprises an organic polymer; Preferably, the organic polymer includes at least one of polycarbonate, polymethyl methacrylate, polyvinylidene fluoride, ethylene-vinyl alcohol copolymer, acrylonitrile-butadiene-styrene copolymer, and polyvinylidene chloride; Preferably, in step (1) and step (3), the solvent independently comprises at least one of N,N-dimethylformamide, dimethyl sulfoxide, and propylene glycol methyl ether acetate; Preferably, in step (1), the mixing mass ratio of the quantum dot system, polymer and solvent is 1-4:3-10:1000-5000.

7. The method for preparing a quantum dot patterned anti-counterfeiting label according to claim 4, characterized in that: In step (1), the temperature of the spray is 60 to 100° C.; The gas pressure of the spray is 70-100 MPa; The fan frequency of the spray is 20-50 Hz.

8. The method for preparing a quantum dot patterned anti-counterfeiting label according to claim 4, characterized in that: In step (2), the temperature of the secondary growth is 80 to 130° C.; The secondary growth time is 5 to 20 minutes.

9. The method for preparing a quantum dot patterned anti-counterfeiting label according to claim 4, characterized in that: In step (3), the oligomer includes at least one of aliphatic polyurethane acrylate, aliphatic polyurethane hexaacrylate, tin-free aliphatic polyurethane diacrylate, aromatic polyurethane acrylate, aromatic polyurethane hexaacrylate, fluorine-modified polyurethane acrylate, silicone-modified polyurethane acrylate, 2-hydroxy-3-phenoxypropyl acrylate, epoxy acrylate, modified epoxy acrylate, epoxy methacrylate, and fatty acid-modified epoxy acrylate; Preferably, in step (3), the monomer comprises at least one of 4-tert-butylcyclohexyl acrylate, methacrylate ethylene urea ethoxylate, m-phenoxybenzyl acrylate, dicyclopentenyl acrylate, dicyclopentenyl ethoxylated acrylate, ethoxylated phenoxy acrylate, 3,3,5-trimethylcyclohexyl acrylate, and o-phenylphenoxyethyl acrylate; Preferably, in step (3), the initiator comprises at least one of 2-methyl-1-[4-(methylthio)phenyl]-2-morpholinyl]-1-propanone, 2,4,6-trimethylbenzoyl-diphenylphosphine oxide, benzoin dimethyl ether, 2-hydroxy-2-methyl-1-phenyl-1-propanone, 1-hydroxy-cyclohexyl-phenyl ketone, benzophenone, isopropylthioxanthone (2,4 isomer mixture), ethyl 4-(N,N-dimethylamino)benzoate, isooctyl 4-(N,N-dimethyl)benzoate, 2-isopropylthioxanthone, 2-benzyl-2-(dimethylamino)-4-morpholine, 4-phenylxyl ketone, and methyl o-benzoylbenzoate; Preferably, in step (3), the mixing mass ratio of the quantum dot polymer powder II, oligomer, monomer, solvent and initiator is 1-3:1-4:2-5:5-10:0.1-0.

3.

10. The method for preparing a quantum dot patterned anti-counterfeiting label according to claim 4, characterized in that: In step (4), the flow rate of the inkjet printing is 20 to 80 ml / min; Preferably, in step (4), the photocuring is performed using UV blue light; Preferably, the wavelength of the UV blue light is 350-400 nm; Preferably, in step (4), the light curing time is 1 to 10 seconds.

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