Bonded wafer separation equipment and method
By using separation fluid and ultrasonic technology in bonded wafer separation equipment, the problem of damage during bonded wafer separation process in traditional technology is solved, and a softer separation process is achieved.
Patent Information
- Application Number
- CN202311366813.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2023-10-20
- Publication Date
- 2025-04-22
AI Technical Summary
In traditional technology, bonded wafers are easily damaged during separation.
A bonded wafer separation device including a separation groove, a clamping device and an ultrasonic transmitter is used. The clamping device fixes the bonded wafer, injects the separation liquid into the separation tank, and the ultrasonic transmitter emits ultrasonic waves into the separation tank, causing bubbles to be generated at the bonded wafer connection and rupture, thereby achieving separation.
Through the separation liquid infiltration and ultrasonic cavitation method, the damage to the bonded wafer is reduced and a softer separation process is achieved.
Smart Images
Figure CN119864292A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of integrated circuit technology, and in particular to a bonded wafer separation device and method. Background Art
[0002] In the traditional wafer processing process, two wafers need to be bonded to form a bonded wafer.
[0003] As an intermediate state in the wafer processing process, the bonded wafer needs to be separated after a preset processing process.
[0004] However, the conventional method for separating bonded wafers has the problem of damaging the bonded wafers. Summary of the Invention
[0005] Based on this, it is necessary to provide a bonded wafer separation device and method to address the problem of damaging bonded wafers in traditional technologies.
[0006] In order to achieve the above objectives, the present application provides, on the one hand, a bonded wafer separation device, comprising:
[0007] A separation tank, used for accommodating a separation liquid;
[0008] The clamping device includes a clamping base and a pair of support rods, wherein the clamping base is located in the separation groove and is fixedly connected to the separation groove, and the support rod pair is located on the clamping base and is movably connected to the clamping base, and the support rod pair includes two clamping support rods arranged opposite to each other;
[0009] The ultrasonic transmitter is used to transmit ultrasonic waves to the separation tank.
[0010] In the bonded wafer separation apparatus described above, a clamping device secures the bonded wafer, and a separation tank accommodates the clamping device, the bonded wafer, and the separation liquid, so that the bonded wafer is soaked in the separation liquid. An ultrasonic generator emits ultrasonic waves into the separation tank. The ultrasonic waves generate and rupture bubbles at the bonded wafer joints, separating the bonded wafers. The bonded wafer separation apparatus of this embodiment separates the bonded wafers through separation liquid soaking and ultrasonic cavitation, minimizing damage to the bonded wafers.
[0011] In one embodiment, the bonded wafer separation equipment includes a plurality of the support rod pairs, and the plurality of support rod pairs are arrayed in the separation groove.
[0012] In one embodiment, the clamping support rods include adsorption structures, and in the same support rod pair, both clamping support rods are provided with the adsorption structures on the sides facing each other.
[0013] In one embodiment, the adsorption structure includes negative pressure holes.
[0014] In one embodiment, the device further includes a transport device for transporting the separated wafers.
[0015] The present application also provides a bonded wafer separation method, comprising:
[0016] Providing a bonded wafer, the bonded wafer comprising a first wafer and a second wafer bonded to each other;
[0017] The bonded wafer is clamped by two clamping rods arranged opposite to each other in a rod pair, wherein the rod pair is movably connected to a clamping base, and the clamping base is fixed in the separation groove;
[0018] injecting a separation liquid into the separation tank, wherein the separation liquid infiltrates the bonded wafer;
[0019] emitting ultrasonic waves into the separation groove to generate bubbles at the connection between the bonded wafers;
[0020] The bubbles are broken by ultrasonic vibration to separate the first wafer from the second wafer.
[0021] In the above-described bonded wafer separation method, a separation liquid is injected into the separation tank, which soaks the bonded wafers held by the support rods. Simultaneously, ultrasonic waves are emitted into the separation tank, causing tiny bubbles at the bonded wafer junctions to grow and burst, thereby separating the bonded wafers. The combination of separation liquid soaking and ultrasonic cavitation makes the bonded wafer separation process in this embodiment gentler and minimizes damage to the bonded wafers.
[0022] In one embodiment, the bonded wafer is clamped by two clamping rods that are oppositely arranged in the rod pair, and the bonded wafer is adsorbed by the two clamping rods.
[0023] In one embodiment, after the bubbles are broken by ultrasonic vibration to separate the first wafer from the second wafer, the method further includes:
[0024] Transferring the first wafer by sucking it with one of the clamping rods in the rod pair;
[0025] The second wafer is transferred by suction to the other clamping pin in the pin pair.
[0026] In one embodiment, the separation liquid includes a high-surface-active liquid, and / or the separation liquid also includes a cleaning liquid.
[0027] In one embodiment, a bonded wafer is provided, comprising:
[0028] Providing multiple bonded wafers;
[0029] Clamping the bonded wafer by two clamping rods arranged opposite to each other in a rod pair, comprising:
[0030] The plurality of bonded wafers are clamped by a plurality of support rod pairs. BRIEF DESCRIPTION OF THE DRAWINGS
[0031] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the conventional technology, the following briefly introduces the drawings required for use in the embodiments or the conventional technology descriptions. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.
[0032] Figure 1 is a flow chart of a bonded wafer separation method provided in one embodiment;
[0033] Figure 2 is a schematic diagram of a bonded wafer provided in one embodiment;
[0034] Figure 3 is a schematic structural diagram of a clamping device provided in one embodiment;
[0035] Figure 4 Schematic diagram of the structure of a bonded wafer separation device provided in one embodiment;
[0036] Figure 5 A partial schematic diagram of bonding wafer separation provided in one embodiment.
[0037] Explanation of the reference numerals: 100 - bonding wafer, 110 - first wafer, 120 - second wafer, 210 - support rod pair, 211 - clamping support rod, 211a - adsorption structure, 220 - clamping base, 300 - ultrasonic transmitter, 400 - separation tank, 410 - separation liquid, 500 - bubble. DETAILED DESCRIPTION
[0038] To facilitate understanding of the present application, the present application will be described more fully below with reference to the accompanying drawings. The accompanying drawings provide embodiments of the present application. However, the present application may be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to make the disclosure of the present application more thorough and comprehensive.
[0039] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application pertains. The terms used herein in the specification of this application are for the purpose of describing specific embodiments only and are not intended to limit this application.
[0040] It should be understood that when an element or layer is referred to as being “on,” “adjacent,” “connected to,” or “coupled to” another element or layer, it can be directly on, adjacent, connected, or coupled to the other element or layer, or intervening elements or layers may be present. In contrast, when an element is referred to as being “directly on,” “directly adjacent to,” “directly connected to,” or “directly coupled to” another element or layer, there are no intervening elements or layers present.
[0041] Spatially relative terms such as "under," "beneath," "beneath," "under," "above," "above," etc., may be used herein to describe the relationship of an element or feature shown in the figures to other elements or features. It should be understood that in addition to the orientations shown in the figures, spatially relative terms also include different orientations of the device in use and operation. For example, if the device in the drawings is turned over, the element or feature described as "under" or "beneath" or "beneath" the other elements will be oriented as "above" the other elements or features. Thus, the exemplary terms "under" and "under" can include both upper and lower orientations. In addition, the device can also include alternative orientations (e.g., rotated 90 degrees or other orientations), and the spatial descriptors used herein are interpreted accordingly.
[0042] When used herein, the singular forms "a", "an", and "the" may also include the plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "include / comprise" or "have" and the like specify the presence of stated features, integers, steps, operations, components, parts, or combinations thereof, but do not preclude the possibility of the presence or addition of one or more other features, integers, steps, operations, components, parts, or combinations thereof.
[0043] While embodiments of the present invention are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized embodiments (and intermediate structures) of the present invention, variations from the illustrated shapes as a result, for example, of manufacturing techniques and / or tolerances are to be expected. Thus, embodiments of the present invention should not be limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing techniques.
[0044] In one embodiment, see Figure 3 as well as Figure 4 , provides a bonded wafer 100 separation device, including: a separation groove 400, a clamping device, and an ultrasonic generator 300.
[0045] The separation tank 400 is used to accommodate the separation liquid 410 .
[0046] The clamping device includes a clamping base 220 and a pair of support rods 210. The clamping base 220 is located within the separation tank 400 and is fixedly connected to the separation tank 400. The support rod pair 210 is located on the clamping base 220 and is movably connected to the clamping base 220. The support rod pair 210 includes two clamping support rods 211 arranged opposite each other. The clamping device is used to secure the bonded wafer 100.
[0047] The ultrasonic generator 300 is used to emit ultrasonic waves to the separation tank 400. As an example, the ultrasonic generator 300 can be located on the side wall of the separation tank 400. There is no limitation on the number of ultrasonic generators 300, and the number can be set according to actual needs.
[0048] In this embodiment, the clamping device fixes the bonded wafer 100, and the separation tank 400 accommodates the clamping device, the bonded wafer 100, and the separation liquid 410, so that the bonded wafer 100 is infiltrated by the separation liquid 410. The ultrasonic generator 300 emits ultrasonic waves into the separation tank 400. The ultrasonic waves cause bubbles 500 to form at the connection between the bonded wafers 100 and rupture, thereby separating the bonded wafers 100. The bonded wafer 100 separation device of this embodiment completes the separation of the bonded wafers 100 through infiltration of the separation liquid 410 and ultrasonic cavitation, thereby reducing damage to the bonded wafers 100.
[0049] In one embodiment, the bonded wafer 100 separation device may include a plurality of support rod pairs 210 , and the plurality of support rod pairs 210 are arranged in an array within the separation groove 400 .
[0050] As an example, a plurality of support rod pairs 210 may be arranged in an array on the same clamping base 220 , and the clamping base 220 is located in the separation slot 400 .
[0051] As another example, the bonded wafer 100 separation apparatus may further include a plurality of clamping bases 220. The number of clamping bases 220 may be consistent with the number of support rod pairs 210, and the two may be provided in a one-to-one correspondence. When the plurality of clamping bases 220 are arranged in an array within the separation tank 400, the plurality of clamping support rods 211 may be respectively located on the plurality of clamping bases 220 and arranged in an array together with the plurality of clamping support rods 211 within the separation tank 400.
[0052] In another example, the bonded wafer 100 separation device may further include a plurality of clamping bases 220 . The number of the clamping bases 220 may be consistent with the number of the clamping support rods 211 . In this case, a pair of support rods 210 is provided corresponding to two clamping bases 220 .
[0053] In this embodiment, the bonded wafer 100 separation device includes multiple support rod pairs 210, which can fix multiple bonded wafers 100, so that multiple bonded wafers 100 can be separated together, thereby improving the separation efficiency of the bonded wafer 100 separation device.
[0054] In one embodiment, the clamping rods 211 include suction structures 211a. Within the pair of rods 210, both clamping rods 211 are provided with suction structures 211a on the side facing each other. The suction structures 211a are used to absorb the separated wafers. The number of suction structures 211a that can be included in the clamping rods 211 is not limited.
[0055] As an example, the adsorption structure 211a includes negative pressure holes. In this case, the negative pressure holes on the clamping rods 211 create a pressure difference between the two sides of the separated wafers, thereby allowing the clamping rods 211 to adsorb the separated wafers.
[0056] Furthermore, as an example, the adsorption structure 211a includes a negative pressure hole. The negative pressure hole can also adsorb the bonded wafer 100, thereby assisting in clamping. The air pressure within the negative pressure hole is lower than the external air pressure. There is a pressure difference between the area where the surface of the bonded wafer 100 contacts the negative pressure hole and the external air pressure, causing the bonded wafer 100 to be adsorbed between the clamping rods 211.
[0057] In one embodiment, the bonded wafer 100 separation device further includes a transmission device for transmitting the separated wafers.
[0058] In one embodiment, see Figure 1 , providing a method for separating a bonded wafer 100, comprising:
[0059] Step S100 , providing a bonding wafer 100 , wherein the bonding wafer 100 includes a first wafer 110 and a second wafer 120 bonded to each other;
[0060] Step S200 , clamping the bonded wafer 100 by two opposing clamping rods 211 in the rod pair 210 , wherein the rod pair 210 is movably connected to the clamping base 220 , and the clamping base 220 is fixed in the separation tank 400 ;
[0061] Step S300 , injecting a separation liquid 410 into the separation tank 400 , and the separation liquid 410 infiltrates the bonded wafer 100 ;
[0062] Step S400 , emitting ultrasonic waves into the separation groove 400 to generate bubbles 500 at the connection between the bonded wafers 100 ;
[0063] In step S500 , the bubbles 500 are broken by ultrasonic vibration to separate the first wafer 110 from the second wafer 120 .
[0064] In step S100, refer to Figure 2During the wafer processing process, the first wafer 110 and the second wafer 120 are bonded together through intermolecular forces, thereby forming a bonded wafer 100. The materials of the first wafer 110 and the second wafer 120 are not limited; for example, both can be made of silicon (Si). Other film layers can also be formed on the first wafer 110 and the second wafer 120, also without limitation.
[0065] In step S200, refer to Figure 3 The support rod pair 210 includes two clamping support rods 211 disposed opposite to each other. The bonded wafer 100 is placed between the two clamping support rods 211 so that the support rod pair 210 clamps the bonded wafer 100 .
[0066] The support rod pair 210 is movably connected to the clamping base 220. When the bonded wafer 100 is placed between the two clamping support rods 211, the clamping support rods 211 can slide from both sides of the clamping base 220 to the bonded wafer 100. The clamping base 220 is used to support the bonded wafer 100. The clamping base 220 is fixed in the separation groove 400, which is used to accommodate the clamping base 220, the support rod pair 210 and the bonded wafer 100.
[0067] In step S300, refer to Figure 4 The separation tank 400 is also used to accommodate a separation liquid 410 . The separation liquid 410 is injected into the separation tank 400 so that the bonded wafer 100 is infiltrated by the separation liquid 410 .
[0068] As an example, the separation liquid 410 may be a high-surface-active liquid. The contact angle between the high-surface-active liquid and the bonded wafer 100 is small, so the liquid is less likely to stay at the edge of the bonded wafer 100 and more likely to enter the center of the bonded wafer 100 from the edge of the bonded wafer 100, thereby making it easier for the bonded wafer 100 to be infiltrated by the high-surface-active liquid.
[0069] In another example, the separation liquid 410 may also include a cleaning liquid. In this case, the separation liquid 410 may also be used to clean the surface of the wafer after separation, so that the separation and cleaning of the bonded wafer 100 are completed simultaneously, thereby improving process efficiency and reducing process costs.
[0070] In step S400, refer to Figure 5 In FIG. 4 , (a), ultrasonic waves are emitted into the separation tank 400 . The ultrasonic waves have a cavitation effect, that is, tiny bubbles 500 in the separation liquid 410 at the connection of the bonded wafers 100 vibrate, grow, and continuously accumulate energy under the action of the ultrasonic waves.
[0071] As an example, ultrasonic waves can be emitted into the separation tank 400 by an ultrasonic generator 300, and the ultrasonic generator 300 can be disposed on a sidewall of the separation tank 400. The number of ultrasonic generators 300 is not limited herein.
[0072] In step S500, refer to Figure 5 In FIG. 5( b ), the energy accumulated in the bubble 500 due to ultrasonic vibration reaches a preset value, the bubble 500 located at the connection of the bonded wafer 100 ruptures, and the bonded wafer 100 is separated.
[0073] In this embodiment, separation liquid 410 is injected into separation tank 400 to soak the bonded wafers 100 held by support rod pair 210. Simultaneously, ultrasonic waves are emitted into separation tank 400, causing tiny bubbles 500 at the junction of bonded wafers 100 to grow and burst, thereby separating bonded wafers 100. The combination of separation liquid 410 soaking and ultrasonic cavitation makes the separation of bonded wafers 100 in this embodiment gentler, minimizing damage to bonded wafers 100.
[0074] In one embodiment, during step S200 , the wafer 100 is adsorbed and bonded by two clamping rods 211 .
[0075] The bonding wafer 100 is adsorbed by the clamping support rods 211. Specifically, the bonding wafer 100 can be adsorbed by the adsorption structures 211a on the clamping support rods 211. In the same support rod pair 210, the adsorption structures 211a are provided on the sides of the two clamping support rods 211 facing each other. There is no limit on the number of adsorption structures 211a included in each clamping support rod 211. The number of adsorption structures 211a on the two clamping support rods 211 of the same support rod pair 210 can be equal or different, and can be set according to actual needs.
[0076] As an example, the suction structure 211a includes a negative pressure hole. When the bonded wafer 100 is clamped by the support rod pair 210, the negative pressure hole can also absorb the bonded wafer 100, thereby assisting in clamping. The air pressure within the negative pressure hole is lower than the external air pressure. There is a pressure difference between the area where the surface of the bonded wafer 100 contacts the negative pressure hole and the external air pressure, causing the bonded wafer 100 to be adsorbed between the clamping support rods 211.
[0077] In one embodiment, after step S500, the method further includes:
[0078] Step S610 , transferring the first wafer 110 by adsorbing it through one of the clamping rods 211 in the rod pair 210 ;
[0079] In step S620 , the second wafer 120 is transferred by adsorbing the second wafer 120 through the other clamping support rod 211 of the support rod pair 210 .
[0080] The bonded wafer 100 is separated into a first wafer 110 and a second wafer 120. For example, the first wafer 110 can be adsorbed by one of the clamping rods 211 in the rod pair 210 via the adsorption structure 211a, and the second wafer 120 can be adsorbed by the other clamping rod 211 in the rod pair 210 via the adsorption structure 211a. The adsorption structure 211a on the clamping rod 211 creates a pressure difference between the two sides of the separated wafers, thereby causing the clamping rod 211 to adsorb the separated wafers.
[0081] Furthermore, after the first wafer 110 and the second wafer 120 are separated, the first wafer 110 can be transferred to the transport device by being attracted by one of the clamping rods 211 in the rod pair 210. The second wafer 120 can also be transferred to the transport device by being attracted by the other clamping rod 211 in the rod pair 210. The first wafer 110 and the second wafer 120 are then transported away using the transport device.
[0082] In one embodiment, step S100 includes:
[0083] Step S110, providing a plurality of bonding wafers 100;
[0084] Step S200 includes:
[0085] In step S220 , a plurality of bonded wafers 100 are clamped by a plurality of support rod pairs 210 .
[0086] A plurality of bonded wafers 100 may be provided at the same time, where the term "a plurality" means two or more. The plurality of bonded wafers 100 are clamped and fixed by a plurality of support rod pairs 210 .
[0087] In this embodiment, multiple bonded wafers 100 are respectively placed between two clamping rods 211 of multiple rod pairs 210. The same separation groove 400 can carry multiple bonded wafers 100 and complete the separation of multiple bonded wafers 100, effectively improving the separation rate of the bonded wafers 100.
[0088] It should be understood that although Figure 1 The steps in the flowchart are shown in sequence as indicated by the arrows, but these steps are not necessarily executed in the order indicated by the arrows. Unless otherwise specified in this document, there is no strict order restriction for the execution of these steps, and these steps can be executed in other orders. In addition, Figure 1At least part of the steps may include multiple steps or multiple stages. These steps or stages are not necessarily performed at the same time, but can be performed at different times. The order of execution of these steps or stages is not necessarily one by one, but can be performed in turn or alternately with other steps or at least part of the steps or stages in other steps.
[0089] Throughout this specification, references to terms such as "some embodiments," "other embodiments," and "desired embodiments" indicate that a particular feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the present application. The schematic descriptions of these terms throughout this specification do not necessarily refer to the same embodiment or example.
[0090] The technical features of the above-mentioned embodiments can be combined arbitrarily. In order to make the description concise, not all possible combinations of the technical features of the above-mentioned embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.
[0091] The above-described embodiments merely represent several implementation methods of the present application. While the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that a person of ordinary skill in the art may make various modifications and improvements without departing from the spirit of the present application, and these modifications and improvements fall within the scope of protection of the present application. Therefore, the scope of protection of the present patent application shall be determined by the appended claims.
Claims
1. A bonded wafer separation device, characterized in that: include: A separation tank, used for containing a separation liquid; The clamping device comprises a clamping base and a pair of support rods, wherein the clamping base is located in the separation groove and is fixedly connected to the separation groove, the support rod pair is located on the clamping base and is movably connected to the clamping base, and the support rod pair comprises two clamping support rods arranged opposite to each other; The ultrasonic transmitter is used to transmit ultrasonic waves to the separation tank.
2. The bonded wafer separation device according to claim 1, characterized in that: The bonded wafer separation equipment comprises a plurality of the support rod pairs, and the plurality of support rod pairs are arrayed in the separation groove.
3. The bonded wafer separation device according to claim 1, characterized in that: The clamping support rods include an adsorption structure. In the same support rod pair, the two clamping support rods are both provided with the adsorption structure on the side facing each other.
4. The bonded wafer separation device according to claim 3, characterized in that: The adsorption structure includes negative pressure holes.
5. The bonded wafer separation device according to claim 1, characterized in that: The device also includes a transmission device for transmitting the separated wafers.
6. A method for separating bonded wafers, characterized in that: include: Providing a bonded wafer, the bonded wafer comprising a first wafer and a second wafer bonded to each other; The bonding wafer is clamped by two clamping rods arranged opposite to each other in a rod pair, the rod pair is movably connected to a clamping base, and the clamping base is fixed in the separation groove; Injecting a separation liquid into the separation tank, wherein the separation liquid infiltrates the bonded wafer; emitting ultrasonic waves into the separation groove to generate bubbles at the connection of the bonded wafers; The bubbles are broken by ultrasonic vibration to separate the first wafer from the second wafer.
7. The bonded wafer separation method according to claim 6, characterized in that: The bonding wafer is clamped by two clamping support rods that are arranged opposite to each other in the support rod pair, and the bonding wafer is adsorbed by the two clamping support rods.
8. The bonded wafer separation method according to claim 6, characterized in that: After the bubbles are broken by ultrasonic vibration to separate the first wafer from the second wafer, the method further includes: Transferring the first wafer by sucking it with one of the clamping rods in the rod pair; The second wafer is transferred by suction by the other clamping pin in the pin pair.
9. The bonded wafer separation method according to claim 6, characterized in that: The separation liquid includes a high-surface-activity liquid, and / or the separation liquid also includes a cleaning liquid.
10. The bonded wafer separation method according to claim 6, characterized in that: Provide bonded wafers, including: Providing multiple bonded wafers; The bonding wafer is clamped by two clamping rods arranged opposite to each other in a rod pair, comprising: The plurality of bonded wafers are clamped by a plurality of supporting rod pairs.