Wafer high temperature annealing apparatus

Abstract

The application discloses a wafer high-temperature annealing equipment, which comprises a machine body, a cavity arranged in the machine body, a furnace body arranged in the middle of the machine body and used for heat processing of the wafer, a feeding mechanism corresponding to a feeding end of the furnace body, a gas injection mechanism, and a water cooling mechanism arranged around the furnace body. The furnace body is independently powered by a power supply, so that the temperature in the cavity of the furnace body can be increased to 2000 DEG C, thereby providing a better wafer heat processing environment. The water cooling mechanism is arranged around the furnace body and used for reducing the influence of high temperature generated by the furnace body during operation on peripheral components. When the wafer processing is completed, the gas injection mechanism is used to inject a cooling atmosphere into the furnace body, and the water cooling mechanism is used for water circulation, so that the furnace body can be rapidly cooled, thereby achieving the effects of rapid heating and rapid cooling.

Description

Technical Field

[0001] This utility model relates to the technology in the field of wafer processing, and in particular to a high-temperature annealing equipment for wafers. Background Technology

[0002] High-temperature wafer annealing equipment is a key piece of equipment used in semiconductor manufacturing. Its main purpose is to improve the microstructure and performance of wafers through high-temperature processing. Depending on different needs and process requirements, high-temperature wafer annealing equipment can be divided into several types, including traditional high-temperature furnace annealing, rapid thermal annealing (RTA), laser annealing, and ion beam annealing.

[0003] Traditional high-temperature annealing equipment is mostly tube furnace or muffle furnace. The basic principle is to use heating wire or silicon carbide rod to heat the furnace body. The heating and cooling speeds are slow, and the heating and cooling efficiency is low, resulting in problems such as high energy consumption and low production efficiency. Summary of the Invention

[0004] In view of this, the present invention addresses the deficiencies of the existing technology and its main purpose is to provide a wafer high-temperature annealing equipment. It solves the problems of traditional high-temperature annealing equipment, which are mostly tube furnaces or muffle furnaces. The basic principle is usually to use heating wires or silicon carbide rods to heat the furnace body. The heating and cooling speeds are slow, the heating and cooling efficiency is low, resulting in high energy consumption and low production efficiency.

[0005] To achieve the above objectives, the present invention adopts the following technical solution: a wafer high-temperature annealing equipment, comprising a body, wherein the inner cavity of the body is provided with the following components;

[0006] The furnace body, located in the middle of the machine body, is used for thermal processing of wafers;

[0007] The feeding mechanism corresponds to the inlet end of the furnace body. When the feeding mechanism operates, it transports the wafers into the furnace body for processing.

[0008] The gas injection mechanism has a gas injection pipe connected to the furnace body. When the gas injection mechanism is activated, process gas or refrigerant gas is injected into the furnace body.

[0009] The water cooling system has water supply and return pipes connected to the interlayer of the furnace body. The water cooling system is activated to cool the furnace body.

[0010] The heat insulation components are located in the feeding mechanism and inside the furnace.

[0011] Furthermore, the furnace body is equipped with an inner liner, as well as a heating element and a temperature detection element connected to the inner liner at one end, and the feeding end of the feeding mechanism corresponds to the feeding end of the inner liner.

[0012] Furthermore, the water cooling mechanism includes a cooling coil assembly inserted into the interlayer. The cooling coil assembly has a first spiral groove and a second spiral groove that are staggered on both sides. The water supply pipe is connected to the water inlet end of the first spiral groove, and the water return pipe is connected to the water outlet end of the second spiral groove.

[0013] Furthermore, a groove is provided on one side of the cooling coil assembly, and a protrusion is inserted into the groove. The protrusion is provided with a first connecting groove that communicates with the first spiral groove and a second connecting groove that communicates with the second spiral groove. A flow guide channel is also provided in the middle of the protrusion, and the two ends of the flow guide channel are respectively connected to the water outlet of the first connecting groove and the water inlet of the second spiral groove.

[0014] Furthermore, the feeding mechanism includes a cover plate relative to the furnace inlet end, a drive component for driving the cover plate to move, a cap on the cover plate that is adapted to the opening of the inner cavity of the inner liner, a positioning rod connected to the cap, and a carrier plate on the positioning rod; during processing, the cap moves closer to the inner liner, so that the carrier plate is suspended in the inner cavity of the inner liner.

[0015] Furthermore, the inner liner and the cover are provided with a heat insulation component, which includes a first heat insulation sheet disposed on the inner wall of the inner liner and a second heat insulation sheet disposed on the side of the cover opposite to the inner liner. The first heat insulation sheet and the second heat insulation sheet are adapted to each other, and a positioning rod is disposed on the second heat insulation sheet.

[0016] Furthermore, both the first and second heat insulation sheets contain multiple layers, with the multiple layers of the first / second heat insulation sheets stacked sequentially, and the opposite surfaces of the multiple layers of the first and second heat insulation sheets having matching grooves.

[0017] The heating element is a high-purity metal electrode, the first and second heat insulation sheets are high-temperature resistant heat insulation screens, and the water cooling mechanism is connected to the inner cavity of the first and second heat insulation sheets.

[0018] Furthermore, the upper surface of the carrier disk is provided with a receiving groove for accommodating the wafer in the middle, and ear grooves are provided on either side of the receiving groove, and the ear grooves are connected to the receiving groove.

[0019] The two ear slots are provided with buffer pushers. The buffer pushers include receiving grooves provided in the ear slots and the bottom wall of the receiving groove, rods provided in the inner cavity of the receiving groove, and inclined plates that are sleeved on the rods. The inclined plates are provided with a notch at one end of the inner cavity of the receiving groove.

[0020] Furthermore, the machine body is equipped with a power supply that is electrically connected to the heating element inside the furnace. When the power supply is turned on, the heating element heats up and works in conjunction with the process gas injected into the furnace by the gas injection mechanism to process the wafer.

[0021] The machine body is equipped with a vacuum mechanism, which includes a vacuum pump cabinet located next to the machine body and a vacuum pipeline connected to the vacuum pump in the vacuum pump cabinet. The end of the vacuum pipeline away from the vacuum pump cabinet is connected to the furnace body. When the vacuum mechanism operates, it draws air from the furnace body, making the furnace body a vacuum state.

[0022] Furthermore, the gas injection mechanism includes a gas holder and a gas supply pipe connecting each cylinder on the gas holder. The gas supply pipe extends into the furnace body and connects to the inner cavity of the inner liner.

[0023] Compared with the prior art, this utility model has obvious advantages and beneficial effects. Specifically, as can be seen from the above technical solution, by independently supplying power to the furnace body, the temperature inside the furnace cavity can be raised to 2000°, so as to provide a better wafer heat treatment processing environment.

[0024] The water-cooling mechanism is located around the furnace body to reduce the impact of the high temperature generated during furnace operation on surrounding components. When wafer processing is completed, a cooling atmosphere can be injected into the furnace body through the gas injection mechanism and the water circulation through the water-cooling mechanism can be used to quickly cool the furnace body, thereby achieving the effect of rapid heating and rapid cooling.

[0025] To more clearly illustrate the structural features and effects of this utility model, the following detailed description of this utility model is provided in conjunction with the accompanying drawings and specific embodiments. Attached Figure Description

[0026] Figure 1 This is a three-dimensional schematic diagram of Embodiment 1 of the present invention.

[0027] Figure 2 This is a structural assembly diagram of the furnace body according to Embodiment 1 of the present invention.

[0028] Figure 3 This is a perspective view of the furnace body according to Embodiment 1 of the present invention.

[0029] Figure 4 This is a perspective view of the gas injection mechanism of Embodiment 1 of the present invention.

[0030] Figure 5 This is a connection diagram of the furnace body and the feeding mechanism in Embodiment 1 of the present invention.

[0031] Figure 6 This is a perspective view of the feeding mechanism of Embodiment 1 of the present invention.

[0032] Figure 7 This is a rear view of the furnace body according to Embodiment 1 of the present invention.

[0033] Figure 8 This is a diagram illustrating the cooling coil assembly of Embodiment 1 of the present invention.

[0034] Figure 9 This is a diagram showing the inner cavity of the furnace body according to Embodiment 1 of the present invention.

[0035] Figure 10 This is a diagram showing the inner cavity of the receiving groove in Embodiment 1 of the present invention.

[0036] Figure 11This is a cross-sectional view of the carrier disk in Embodiment 1 of the present invention.

[0037] Figure 12 This is a diagram illustrating the buffer pusher of Embodiment 1 of the present invention.

[0038] Figure 13 This is a three-dimensional view of the auxiliary rod of Embodiment 1 of the present invention.

[0039] Explanation of reference numerals in the attached diagram:

[0040] 10 machine bodies;

[0041] 21 Furnace body, 22 Inner liner, 23 Heating element, 24 Temperature detection element, 25 Spacing, 26 Support rod;

[0042] 30 Feeding mechanism, 31 Cover plate, 311 First plate, 312 Second plate, 313 Sealing strip, 32 Driving component, 33 Cover, 331 Insertion hole, 332 Auxiliary rod, 3321 Connecting hole, 3322 Elastic rod, 34 Positioning rod, 341 Overlap groove, 35 Carrier tray, 351 Receiving groove, 352 Ear groove;

[0043] 40 Gas injection mechanism, 41 Gas holder, 42 Gas transmission pipe;

[0044] 50 Water cooling mechanism, 51 Water supply pipe, 52 Water return pipe, 53 Jacket, 54 Cooling coil assembly, 55 First spiral groove, 56 Second spiral groove, 57 Groove, 58 Protrusion, 581 First connecting groove, 582 Second connecting groove, 59 Guide channel;

[0045] 60 power supply;

[0046] 70 Vacuum mechanism, 71 Vacuum pump cabinet, 72 Vacuum piping;

[0047] 80 Thermal insulation component, 81 First thermal insulation sheet, 82 Second thermal insulation sheet, 83 Groove;

[0048] 90 Buffer pusher, 91 Receiving groove, 92 Rod, 93 Inclined plate, 94 Notch, 95 Extension groove, 96 Torsion spring. Detailed Implementation

[0049] Please refer to Figure 1-13 As shown, it illustrates the specific structure of a preferred first embodiment of the present invention, which is a wafer high-temperature annealing device, including a body 10, with the body 10 having a cavity arranged with;

[0050] Furnace body 21, located in the middle of machine body 10, is used for thermal processing of wafers;

[0051] The feeding mechanism 30 corresponds to the feeding end of the furnace body 21. When the feeding mechanism 30 is in operation, it transports the wafer into the furnace body 21 for processing.

[0052] Gas injection mechanism 40, the gas injection pipe of gas injection mechanism 40 is connected to furnace body 21, gas injection mechanism 40 is started to inject process gas or refrigerant gas into furnace body 21;

[0053] The water cooling mechanism 50 has a water supply pipe 51 and a water return pipe 52 connected to the interlayer 53 of the furnace body 21. The water cooling mechanism 50 is activated to cool the furnace body 21.

[0054] A heat insulation component 80 is installed within the feeding mechanism 30 and the furnace body 21. Unlike traditional high-temperature wafer annealing equipment, which is mostly tubular or muffle furnaces, the basic principle is to heat the furnace body using heating wires or silicon carbide rods. This results in slow heating and cooling rates, low efficiency, and the inability to monitor temperature or ensure uniform temperature in the heating area. In contrast, this high-temperature wafer annealing equipment provides independent power to the furnace body 21 via a power supply 60, allowing the internal temperature of the furnace body 21 to rise to 2000°C, providing a better wafer heat treatment environment. Furthermore, the feeding mechanism 30 corresponds to the inlet of the furnace body 21, and driven by external force, it can transport wafers into the furnace body 21 for heat treatment. The gas injection mechanism 40 is placed at the bottom of the inner cavity of the machine body 10, and the gas outlet of the gas injection mechanism 40 is connected to the furnace body 21. The gas injection mechanism 40 injects the formula gas into the furnace body 21, and a chemical reaction occurs at the high temperature inside the furnace body 21 to process the wafers on the feeding mechanism 30. The water cooling mechanism 50 is set around the furnace body 21 to reduce the impact of the high temperature generated by the furnace body 21 during operation on surrounding components. When the wafer processing is completed, the gas injection mechanism 40 can inject a cooling atmosphere into the furnace body 21, and the water circulation of the water cooling mechanism 50 can rapidly cool the furnace body 21, thereby achieving the effect of rapid heating and rapid cooling.

[0055] The furnace body 21 contains an inner liner 22, a heating element 23 connected to one end of the inner liner 22, and a temperature detection element 24. The feeding end of the feeding mechanism 30 corresponds to the feeding end of the inner liner 22. Compared with the inner cavity of the furnace body 21, the inner cavity of the inner liner 22 has a smaller volume. This makes it easier for the heating element 23 to quickly raise the temperature of the inner cavity of the inner liner 22 after the feeding end of the feeding mechanism 30 is inserted into the inner cavity of the inner liner 22. This allows for better thermal processing of the wafers delivered to the inner cavity of the inner liner 22 by the feeding mechanism 30. In addition, there is a gap 25 between the outer wall of the inner liner 22 and the inner wall of the furnace body 21. The gap 25 accommodates the heating element 23 and the temperature detection element 24 while also accommodating the heat conducted out of the inner liner 22, thus preventing the heat from affecting other components near the machine body 10 when it is conducted out of the furnace body 21.

[0056] Specifically, the inner liner 22 is installed inside the furnace body 21 via a detachable support rod 26, aligning the feed end of the inner liner 22 with the feed end of the feeding mechanism 30 for easy replacement in case of damage. The heating element 23 is electrically connected to the power supply 60, and starts heating when the power supply 60 is running. The vacuum mechanism 70 is connected to the inner cavity of the furnace body 21 via a vacuum pipe, ensuring that the inner cavity of the furnace body 21 is in a vacuum state during wafer processing. This prevents the process gas injected into the inner liner 22 by the gas injection mechanism 40 from mixing with air and reducing the wafer processing efficiency.

[0057] like Figure 7 As shown, exemplarily, the water-cooling mechanism 50 includes a cooling coil assembly 54 inserted into the interlayer 53. The cooling coil assembly 54 has a first spiral groove 55 and a second spiral groove 56 staggered on both sides. A water supply pipe 51 is connected to the inlet end of the first spiral groove 55, and a return water pipe 52 is connected to the outlet end of the second spiral groove 56. The cooling coil assembly 54 is adapted to the interlayer 53, so that the surface of the cooling coil assembly 54 is in contact with the furnace body 21. When the temperature inside the furnace body 21 rises, the temperature is conducted to the cooling coil assembly 54. At this time, water flows through the water supply pipe 51 into the first spiral groove 55 to reduce the temperature of the furnace body 21's surface, and then into the second spiral groove 56 to cool the inner wall of the furnace body 21. This increases the water-cooling area and improves the heat dissipation effect, preventing damage to the furnace body 21 at high temperatures.

[0058] It should be noted that the first spiral groove 56 corresponds to the outer wall of the furnace body 21, and the second spiral groove 56 corresponds to the inner wall of the furnace body 21. When water flows into the jacket 53 through the water supply pipe 51 and is discharged through the return water pipe 52, the temperature of the first spiral groove 56 near the outer wall of the furnace body 21 is relatively low, while the temperature of the second spiral groove 56 near the inner wall of the furnace body 21 is relatively high. By adding a cooling ring group 54 in the jacket 53, and opening the first spiral groove 55 and the second spiral groove 56 on the cooling ring group 54, the flow area of ​​the cooling water can be increased, so that the cooling water discharged from the return water pipe 52 can carry away more heat, thereby better preventing damage to the furnace body 21. In addition, it can also achieve a better cooling effect when cooling the furnace body 21.

[0059] like Figure 9As shown, for example, a groove 57 is provided on one side of the cooling coil assembly 54, and a protrusion 58 is inserted into the groove 57. The protrusion 58 is provided with a first connecting groove 581 that communicates with the first spiral groove 55 and a second connecting groove 582 that communicates with the second spiral groove 56. A guide channel 59 is also provided in the middle of the protrusion 58. The two ends of the guide channel 59 are respectively connected to the water outlet of the first connecting groove 581 and the water inlet of the second spiral groove 56. Because of the fit between the cooling coil assembly 54 and the interlayer 53, the water flowing in the first spiral groove 55 cannot enter the second spiral groove 56. Therefore, a groove 57 is opened on the cooling coil assembly 54, and a protrusion 58 corresponding to the groove 57 is fixed in the interlayer 53. When a first connecting groove 581 corresponding to the first spiral groove 55 is opened at one end of the protrusion 58, the water in the first spiral groove 55 can flow normally. When the water flows to the outlet end of the first spiral groove 55, one cooling cycle is completed. The water in the first spiral groove 55 is guided to the second spiral groove 56 through the guide channel 59 opened in the middle of the inner cavity of the protrusion 58. With the connection between the second connecting groove 582 and the second spiral groove 56, the water flows from the outlet end of the second spiral groove 56 into the return water pipe 52, and a second cooling cycle is performed. Through two cooling cycles, the cooling effect of the water cooling mechanism 50 on the furnace body 21 is further improved.

[0060] like Figure 6 As shown, for example, the feeding mechanism 30 includes a cover plate 31 relative to the inlet end of the furnace body 21, a driving member 32 for driving the cover plate 31 to move, a sealing cover 33 provided on the cover plate 31 and adapted to the opening of the inner cavity of the inner liner 22, and a positioning rod 34 connected to the sealing cover 33 and a carrier plate 35 provided on the positioning rod 34; during processing, the sealing cover 33 moves closer to the inner liner 22, so that the carrier plate 35 enters the inner cavity of the inner liner 22 and is suspended in the air. The wafer is placed on the carrier plate 35. When processing the wafer, the drive unit 32 drives the cover plate 31 to move closer to the furnace body 21 until the cover 33 is inserted into the inner cavity of the inner liner 22. With the start of the heating element 23, the temperature of the inner cavity of the inner liner 22 rises and the wafer on the carrier plate 35 is processed. After processing, the inner cavity of the furnace body 21 is cooled by the water cooling mechanism 50 and the gas injection mechanism 40. The gas injection mechanism 40 also cools the inner cavity of the inner liner 22 by injecting refrigerant into the furnace body 21. Then, the cover 33 is separated from the inner liner 22 by the operation of the drive unit 32 again, and the carrier plate 35 is exposed. The operator replaces the unprocessed wafer on the carrier plate 35.

[0061] Specifically, the cover plate 31 is divided into a first plate 311 and a second plate 312. The second plate 312 is located on the side of the first plate 311 opposite to the furnace body 21. The cover 33 is located on the second plate 312, and the drive unit 32 is connected to the first plate 311. The second plate 312 is adapted to the opening of the furnace body 21. As the second plate 312 is in contact with the feed end of the furnace body 21, the sealing strip 313 on the second plate 312 abuts against the end wall of the furnace body 21 to ensure the sealing of the inner cavity of the furnace body 21 during processing.

[0062] In one embodiment, there are at least two positioning rods 34, and the two positioning rods 34 are provided with corresponding overlapping grooves 341. The side edge of the carrier plate 35 is adapted to the overlapping grooves 341 so that the carrier plate 35 can overlap on the overlapping grooves 341 on the positioning rods 34.

[0063] In one embodiment, a receiving groove 351 for accommodating wafers is provided in the middle of the upper end face of the carrier disk 35, and an ear groove 352 is provided on either side of the receiving groove 351 to facilitate the operator to take out the wafers placed in the receiving groove 351.

[0064] In one embodiment, the side of the cap 33 opposite the inner liner 22 has a plurality of equally spaced insertion holes 331. Insertable auxiliary rods 332 are provided within the insertion holes 331, extending below the carrier tray 35. The carrier tray 35 rests on the auxiliary rods 332, primarily corresponding to the receiving groove 351, making the wafers on the carrier tray 35 more stable during processing and transport.

[0065] In one embodiment, the two auxiliary rods 332 are provided with connecting holes 3321 on opposite sides. An elastic element 3322 is inserted into the connecting hole 3321, and the elastic element 3322 contacts the lower end of the carrier plate 35. The connecting hole 3321 is a cleaning hole, and the insertion into the connecting hole 3321 is arc-shaped, so that when the carrier plate 35 is compressed, the elastic element 3322 can abut against the carrier plate 35 to reduce the deformation of the carrier plate 35 and increase its service life.

[0066] like Figure 3 As shown, the inner liner 22 and the cover 33 are provided with a heat insulation component 80. The heat insulation component 80 includes a first heat insulation sheet 81 disposed on the inner wall of the inner liner 22 and a second heat insulation sheet 82 disposed on the side of the cover 33 opposite to the inner liner 22. The first heat insulation sheet 81 and the second heat insulation sheet 82 are adapted to each other, and the positioning rod 34 is disposed on the second heat insulation sheet 82.

[0067] The first heat insulation sheet 81 and the second heat insulation sheet 82 both contain multiple layers, and the multiple layers of the first heat insulation sheet 81 / second heat insulation sheet 82 are stacked in sequence. The opposite surfaces of the multiple layers of the first heat insulation sheet 81 and the second heat insulation sheet 82 are provided with matching grooves 83.

[0068] The heating element 23 is a high-purity metal electrode, and the first heat insulation sheet 81 and the second heat insulation sheet 82 are high-temperature resistant heat insulation screens. The water cooling mechanism 50 is connected to the inner cavities of the first heat insulation sheet 81 and the second heat insulation sheet 82. The first heat insulation sheet 81 covers the four inner walls of the inner liner 22 to reduce the temperature conducted to the furnace body 21 when the temperature inside the inner liner 22 rises, thereby reducing the possibility of damage to the furnace body 21 due to high temperature. The second heat insulation sheet 82 on the cover 33 can also effectively reduce the heat conducted at the cover 33, further reducing the impact on the furnace body 21 and the sealing strip 313 when the temperature inside the inner liner 22 reaches a maximum of 2000°C.

[0069] It should be noted that the high-temperature heat insulation screen can effectively reduce the temperature of the outer surface of the inner liner 22 to avoid damage caused by excessively high temperature inside the furnace body 21.

[0070] Specifically, when the first heat insulation sheet 81 and the second heat insulation sheet 82 are inserted, the grooves 83 on the first heat insulation sheet 81 and the second heat insulation sheet 82 are inserted to further enhance the heat insulation effect of the first heat insulation sheet 81 and the second heat insulation sheet 82.

[0071] like Figure 10 As shown, for example, the upper end face of the carrier disk 35 is provided with a receiving groove 351 for accommodating the wafer in the middle, and ear grooves 352 are provided on either side of the receiving groove 351 opposite to each other, and the ear grooves 352 are connected to the receiving groove 351.

[0072] The two ear slots 352 are equipped with buffer pushers 90. Each buffer pusher 90 includes a receiving groove 91 located on the bottom wall of the ear slot 352 and the receiving groove 351, a rod 92 located in the inner cavity of the receiving groove 91, and an inclined plate 93 sleeved on the rod 92. The inclined plate 93 has a notch 94 at one end located in the inner cavity of the receiving groove 351. When the gripping end of the external robot extends into the ear slot 352 to grip the wafer placed in the receiving groove 351, the gripping end of the robot needs to abut against the bottom wall of the ear slot 352 to grip the wafer because the wafer is relatively thin. However, as the working time of this mechanized process increases, the carrier 35 is prone to bending and tilting. Therefore, a receiving groove 91 extending into the receiving groove 351 is opened on the bottom wall of the ear slot 352 of the carrier 35, and an inclined plate 93 is placed in the receiving groove 91. The inclined plate 93 is sleeved and fixed to the rod in the inner cavity of the receiving groove 91. 92, and one end of the tilt plate 93 is raised and extends above the ear canal 352. When the gripping end of the robot arm is inserted into the ear canal 352, it will abut against the raised end of the tilt plate 93, causing the raised end of the tilt plate 93 to move downward together with the gripping end of the robot arm. At this time, the tilt plate 93 will move around the rod body 92, that is, the side away from the gripping end of the robot arm is raised in the cavity of the receiving groove 351, so that the wafer placed in the receiving groove 351 is suspended in the air, so as to facilitate the gripping end of the robot arm to pick up the wafer in the receiving groove 351.

[0073] It should be noted that the tilting plate 93 is divided into two parts: one part is located in the ear groove 352 and the other part is located in the receiving groove 351. The tilting plate 93 located in the ear groove 352 is in a tilted state when it is not squeezed by the gripping end of the robotic arm, while the part located in the receiving groove 351 is in a concave state. This allows the tilting plate 93 to lift the wafer with the squeeze of the gripping end of the robotic arm, while also ensuring that the tilting plate 93 does not affect the adhesion between the wafer and the bottom wall of the receiving groove 351 during normal processing.

[0074] In one embodiment, to reduce the impact of the tilting plate 93, which drives the wafer upward in the receiving groove 351, on the gripper's clamping of the wafer, a notch 94 is provided on the portion of the tilting plate 93 located in the receiving groove 351, so that the portion of the tilting plate 93 located in the receiving groove 351 changes from a plate body to two legs. By lifting up the two legs, the wafer can be suspended in the cavity of the receiving groove 351 when the tilting plate 93 is lifted up, cooperating with the gripping end of the gripper, while avoiding the tilting plate 93 from obstructing and affecting the gripper's clamping of the wafer.

[0075] In one embodiment, to further prevent the tilting plate 93 from affecting the horizontality of the wafer when it is placed in the receiving groove 351, a recessed extension groove 95 is formed in the portion of the receiving groove 91 located in the receiving groove 351, and the tilting plate 93 extends into the extension groove 95, thereby providing sufficient receiving space for the tilting plate 93 to avoid the tilting plate 93 obstructing and affecting the fit between the wafer and the bottom wall of the receiving groove 351.

[0076] It should be noted that the connection between the extension groove 95 and the receiving groove 91 is provided with an arc-shaped design to facilitate the movement of the tilting plate 93 through the rod 92 under compression. The movement of the tilting plate 93 is consistent with that of the seesaw.

[0077] In one embodiment, to further facilitate the reset of the tilted plate 93 after it has been tilted up, a torsion spring 96 is sleeved on the rod 92, and the two ends of the torsion spring 96 are respectively connected to the inner wall of the tilted plate 93 and the side wall of the receiving groove 91, so that the tilted plate 93 can be elastically reset by the torsion spring 96 when there is no external force pressing.

[0078] The machine body 10 is equipped with a power supply 60 that is electrically connected to the heating element 23 inside the furnace body 21. When the power supply 60 is turned on, the heating element 23 heats up and works in conjunction with the process gas injected into the furnace body 21 by the gas injection mechanism 40 to process the wafer.

[0079] The machine body 10 is equipped with a vacuum mechanism 70, which includes a vacuum pump cabinet 71 located next to the machine body 10 and a vacuum pipeline 72 connected to the vacuum pump in the vacuum pump cabinet 71. The end of the vacuum pipeline 72 away from the vacuum pump cabinet 71 is connected to the furnace body 21. The vacuum mechanism 70 operates to extract air from the furnace body 21, making the furnace body 21 a vacuum state. Before the wafer thermal processing, the vacuum system 70 starts working to perform the vacuuming step, so that the furnace body 21 reaches the set vacuum value. Then, the gas cabinet 41 injects the corresponding process gas into the inner liner 22 to maintain a stable vacuum level in the high-temperature furnace body 21 and the inner liner 22.

[0080] The gas injection mechanism 40 includes a gas holder 41 and gas supply pipes 42 connecting the various cylinders on the gas holder 41. The gas supply pipes 42 extend into the furnace body 21 and communicate with the inner cavity of the inner liner 22. During wafer processing, process gas is ejected from the gas supply pipes 42 to cooperate with the heating element 23 to perform thermal processing on the wafer. After the wafer heat treatment is completed, the power supply 60 is turned off, the heating element 23 stops heating, and a large amount of cooling atmosphere is introduced through the gas holder 41 into the inner liner 22 to rapidly cool the wafer.

[0081] Specifically, the cooling speed of the wafer can be increased by combining the cooling atmosphere with the water flow within the interlayer.

[0082] The above description is merely a preferred embodiment of the present utility model and does not constitute any limitation on the technical scope of the present utility model. Therefore, any minor modifications, equivalent changes and alterations made to the above embodiments based on the technical essence of the present utility model shall still fall within the scope of the technical solution of the present utility model.

Claims

1. A wafer high temperature annealing apparatus comprising a body (10), characterized in that: The inner cavity of the body (10) is provided with; Furnace body (21), which is located in the middle of the machine body (10) and is used for thermal processing of wafers; The feeding mechanism (30) corresponds to the feeding end of the furnace body (21). When the feeding mechanism (30) is in operation, it transports the wafer into the furnace body (21) for processing. Gas injection mechanism (40), the gas injection pipe of the gas injection mechanism (40) is connected to the furnace body (21), the gas injection mechanism (40) is activated to inject process gas or refrigerant gas into the furnace body (21); The water cooling mechanism (50) has a water supply pipe (51) and a return water pipe (52) connected to the interlayer (53) of the furnace body (21). The water cooling mechanism (50) is activated to cool the furnace body (21). A heat insulation component (80) is provided inside the feeding mechanism (30) and the furnace body (21); the furnace body (21) is provided with an inner liner (22), a heating element (23) and a temperature detection element (24) connected to the inner liner (22) at one end, and the feeding end of the feeding mechanism (30) corresponds to the feeding end of the inner liner (22); the water cooling mechanism (50) includes a cooling coil group (54) inserted into the interlayer (53), the cooling coil group (54) is provided with a first spiral groove (55) and a second spiral groove (56) on both sides respectively, and the water supply pipe (51) is connected to the first spiral groove (55) and the second spiral groove (56). 5) The water inlet section is connected, and the return water pipe (52) is connected to the water outlet of the second spiral groove (56); a groove (57) is provided on one side of the cooling coil group (54), and a protrusion (58) is inserted into the groove (57). The protrusion (58) is provided with a first connecting groove (581) connected to the first spiral groove (55) and a second connecting groove (582) connected to the second spiral groove (56). A guide channel (59) is also provided in the middle of the protrusion (58). The two ends of the guide channel (59) are connected to the water outlet of the first connecting groove (581) and the water inlet of the second spiral groove (56) respectively.

2. The wafer high temperature annealing apparatus of claim 1, wherein: The feeding mechanism (30) includes a cover plate (31) relative to the inlet end of the furnace body (21), a driving component (32) for moving the cover plate (31), a cover (33) provided on the cover plate (31) and adapted to the opening of the inner cavity of the inner liner (22), a positioning rod (34) connected to the cover (33) and a carrier plate (35) provided on the positioning rod (34); during processing, the cover (33) moves closer to the inner liner (22) so that the carrier plate (35) is suspended in the inner cavity of the inner liner (22).

3. The wafer high-temperature annealing equipment according to claim 2, characterized in that: The inner liner (22) and the cover (33) are provided with a heat insulation component (80). The heat insulation component (80) includes a first heat insulation sheet (81) disposed on the inner wall of the inner liner (22) and a second heat insulation sheet (82) disposed on the side of the cover (33) opposite to the inner liner (22). The first heat insulation sheet (81) and the second heat insulation sheet (82) are adapted to each other, and a positioning rod (34) is disposed on the second heat insulation sheet (82).

4. The wafer high-temperature annealing equipment according to claim 3, characterized in that: The first heat insulation sheet (81) and the second heat insulation sheet (82) each contain multiple layers, and the multiple layers of the first heat insulation sheet (81) / second heat insulation sheet (82) are stacked in sequence, and the opposite surfaces of the multiple layers of the first heat insulation sheet (81) and the second heat insulation sheet (82) are provided with matching grooves (83). The heating element (23) is a high-purity metal electrode, the first heat insulation sheet (81) and the second heat insulation sheet (82) are high-temperature heat insulation screens, and the water cooling mechanism (50) is connected to the inner cavity of the first heat insulation sheet (81) and the second heat insulation sheet (82).

5. The wafer high-temperature annealing equipment according to claim 4, characterized in that: The upper end face of the carrier disk (35) is provided with a receiving groove (351) for accommodating the wafer, and ear grooves (352) are provided on either side of the receiving groove (351) and are connected to the receiving groove (351). The two ear canals (352) are provided with a buffer pusher (90). The buffer pusher (90) includes a receiving groove (91) provided in the bottom wall of the ear canal (352) and the receiving groove (351), a rod (92) provided in the inner cavity of the receiving groove (91), and an inclined plate (93) sleeved on the rod (92). The inclined plate (93) is provided with a notch (94) at one end of the inner cavity of the receiving groove (351).

6. The wafer high-temperature annealing equipment according to claim 1, characterized in that: The machine body (10) is equipped with a power supply (60) that is electrically connected to the heating element (23) inside the furnace body (21). When the power supply (60) is activated, the heating element (23) heats up and works in conjunction with the process gas injected into the furnace body (21) by the gas injection mechanism (40) to process the wafer. The machine body (10) is equipped with a vacuum mechanism (70). The vacuum mechanism (70) includes a vacuum pump cabinet (71) located next to the machine body (10) and a vacuum pipeline (72) connected to the vacuum pump in the vacuum pump cabinet (71). The end of the vacuum pipeline (72) away from the vacuum pump cabinet (71) is connected to the furnace body (21). The vacuum mechanism (70) operates to extract air from the furnace body (21) so that the furnace body (21) becomes a vacuum state.

7. The wafer high-temperature annealing equipment according to claim 1, characterized in that: The gas injection mechanism (40) includes a gas cabinet (41) and a gas supply pipe (42) connecting each bottle on the gas cabinet (41). The gas supply pipe (42) extends into the furnace body (21) and communicates with the inner cavity of the inner liner (22).

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