Thin film deposition method and deposition equipment

Abstract

The invention relates to a thin film deposition method and deposition equipment. The thin film deposition method comprises the following steps: providing a to-be-processed substrate and thin film deposition equipment comprising a process cavity internally provided with a gas diffusion assembly, a radio frequency power supply system with the frequency of 0.1-100MHz and a carrier plate; placing a substrate to be processed on the carrier plate; transferring the carrier plate into a process cavity; the method comprises the following steps: introducing process gas containing silane and a nitrogen source in a gas flow ratio of 0.01-0.5 into a process cavity through a gas diffusion assembly, exciting the process gas into plasma under the action of a radio-frequency power supply system to form a silicon nitride film on the surface of a substrate to be processed, controlling the radio-frequency power density to be 200-5000W / m < 2 >, the reaction temperature to be 150-400 DEG C and the pressure to be 0.5-5Torr when the plasma is excited, the vertical distance between the carrier plate and the gas diffusion assembly is 10-50 mm; and the carrier plate is conveyed out of the process cavity. According to the thin film deposition method and the deposition equipment, the deposition of a high-quality thin film is realized.

Description

Technical Field

[0001] The present application relates to the technical field of solar cells, and in particular to a thin film deposition method and deposition equipment. Background Art

[0002] In solar cell technology, heterojunction solar cells have gradually become the development direction of the next generation of mainstream solar cells due to their advantages such as high photoelectric conversion efficiency, low temperature coefficient, simple process, and easy thinning.

[0003] In the preparation process of heterojunction solar cells, flattening the backlight surface is a key step, which can reduce the thickness of the intrinsic passivation layer on the back, shorten the process time, and at the same time improve hole transmission, reduce series resistance, and increase the fill factor. In addition, the velvet polishing of the backlight surface can reduce the transmission of sunlight from the back and increase the absorption of photons by the silicon wafer body, thereby improving the photoelectric conversion efficiency of the cell. In order to protect the velvet surface of the light-receiving surface from the impact of the backlight polishing process, it is usually necessary to cover the light-receiving surface with a mask. This mask must be removed after the velvet polishing of the backlight surface to ensure the photoelectric performance of the cell.

[0004] For back contact (BC) heterojunction solar cells, the PN junction and metal electrode are set on the backlight side of the cell, while the light-receiving side is not shielded by the electrode. This structure can significantly improve the photoelectric conversion efficiency of the cell. In the process flow of this type of cell, the N-region and P-region on the backlight side need to be isolated by a mask during preparation to prevent mutual interference of local processes and ensure the consistency and reliability of cell performance. In addition, a silicon nitride film can also be deposited on the front of the back contact (BC) heterojunction solar cell as an anti-reflection layer.

[0005] Although the use of silicon nitride thin films has played an important role in the solar cell process, there are still many problems with silicon nitride thin films in the prior art, such as the mask film formed is not dense, severe corrosion during polishing, and uneven film deposition. These problems often lead to the mask being partially removed prematurely during the subsequent removal process, thereby damaging the protected layer, or the anti-reflection of the cell surface is inconsistent when used as an anti-reflection layer. These problems not only affect the performance of solar cells, but also increase manufacturing costs and process complexity. Summary of the invention

[0006] Based on this, it is necessary to provide a thin film deposition method and deposition equipment to address the problem of mask quality of heterojunction solar cells in the prior art, which affects the performance of solar cells and increases manufacturing costs and process complexity.

[0007] In order to achieve the above object, on the one hand, the present application provides a thin film deposition method, comprising the following steps:

[0008] Provide a substrate to be processed and a thin film deposition device, wherein the thin film deposition device comprises at least one process chamber, a radio frequency power supply system and a carrier plate, wherein the frequency of the radio frequency power supply system is 0.1 MHz to 100 MHz, and a gas diffusion component is also provided in the process chamber;

[0009] Placing the substrate to be processed on the carrier;

[0010] transferring the carrier into the process chamber;

[0011] The process gas is introduced into the process chamber through the gas diffusion component, and the process gas is excited into plasma under the action of the radio frequency power supply system, so that the process gas reacts on the surface of the substrate to be processed to form a silicon nitride film, the process gas includes silane and a nitrogen source, the gas flow ratio of the silane to the nitrogen source is 0.01-0.5, and during the plasma excitation process, the radio frequency power density is controlled to be 200W / m 2 ~5000W / m 2 , the reaction temperature is 150° C. to 400° C., the pressure in the process chamber is 0.5 Torr to 5 Torr, and the vertical distance between the carrier plate and the gas diffusion assembly is 10 mm to 50 mm;

[0012] The carrier is transferred out of the process chamber.

[0013] In one embodiment, the nitrogen source includes at least one of nitrogen and ammonia. When the process gas introduced contains silane and nitrogen, the gas flow ratio of the introduced silane to the nitrogen is controlled to be 0.01~0.5; when the process gas introduced contains silane and ammonia, the gas flow ratio of the introduced silane to the ammonia is controlled to be 0.01~0.3.

[0014] In one embodiment, the thin film deposition device further comprises:

[0015] A heat support plate, located in the process chamber, and used to support the carrier plate and heat the substrate to be processed to a reaction temperature;

[0016] A lifting device, used to lift the heat support plate to lift the carrier plate and adjust the vertical distance between the carrier plate and the gas diffusion assembly;

[0017] A pressure control device is used to control the pressure in the process chamber.

[0018] In one embodiment, the gas diffusion assembly at least includes a back plate connected to the RF power system and a gas diffuser mounted on the back plate, the back plate and the gas diffuser together form a gas distribution area, and the gas diffuser is provided with a plurality of gas diffusion channels.

[0019] The step of introducing the process gas into the process chamber through the gas diffusion assembly comprises:

[0020] The process gas is introduced into the gas distribution area from the outside, and the process gas is diffused to the area below the gas diffuser in the process chamber through the gas diffusion channel.

[0021] In one of the embodiments, the center of the side of the gas diffuser away from the back plate is recessed relative to the edge, and the recessed shape of the side of the gas diffuser away from the back plate is arc-shaped or step-shaped.

[0022] In one embodiment, the gas diffusion assembly further includes an adjusting portion, which passes through the back plate and is connected to the gas diffuser, and the adjusting portion is used to form a recess at the center of a side of the gas diffuser away from the back plate and adjust the depth of the recess at the center of a side of the gas diffuser away from the back plate.

[0023] In one embodiment, a dielectric plate is further installed on the gas diffuser, and the dielectric plate is located below a side of the gas diffuser away from the back plate. When the side of the gas diffuser away from the back plate has a depression, a gap is provided between the dielectric plate and the side of the gas diffuser away from the back plate, and the distance of the gap gradually decreases from the center to the edge of the gas diffuser.

[0024] In one embodiment, the thin film deposition equipment further includes a loading and unloading device, which is used to enable the carrier to enter and exit the process chamber. The loading and unloading device includes a loading and unloading chamber, a first conveying mechanism, and a second conveying mechanism. The loading and unloading chamber and the process chamber are arranged in sequence.

[0025] The step of sending the carrier into the process chamber comprises:

[0026] Using the first conveying mechanism to convey the carrier from the loading and unloading chamber to the process chamber;

[0027] Under the action of the radio frequency power system, the process gas is excited into plasma, so that the process gas reacts on the surface of the substrate to be processed to form the silicon nitride film;

[0028] The method of transferring the carrier plate out of the process chamber comprises:

[0029] The carrier is transferred from the process chamber back to the loading and unloading chamber by the second transfer mechanism.

[0030] In one embodiment, the first conveying mechanism and the second conveying mechanism are partially driven by rollers to drive the carrier plate to enter and exit the process chamber, and the rollers of the first conveying mechanism or the second conveying mechanism located in the process chamber can be extended and retracted along the central axis direction of the rollers;

[0031] Wherein, using the first conveying mechanism to convey the carrier from the loading and unloading chamber to the process chamber specifically includes:

[0032] Transmitting the carrier into the loading and unloading chamber through the first conveying mechanism;

[0033] Then, the carrier is transferred into the process chamber by the first conveying mechanism;

[0034] The step of transferring the carrier from the process chamber back to the loading and unloading chamber by the second transfer mechanism specifically includes:

[0035] Extending the roller of the second conveying mechanism into the process chamber and lowering the heat support plate so that the carrier plate on the heat support plate falls onto the roller of the second conveying mechanism;

[0036] The carrier plate dropped onto the roller of the second conveying mechanism is transferred from the process chamber to the loading and unloading chamber through the second conveying mechanism.

[0037] In one embodiment, the thin film deposition equipment further includes a loading and unloading device, which is used to enable the carrier to enter and exit the process chamber. The loading and unloading device includes a loading chamber, an unloading chamber and a third conveying mechanism. The loading chamber, the process chamber and the unloading chamber are arranged in sequence.

[0038] Sending the carrier into the process chamber comprises:

[0039] Using the third conveying mechanism to convey the carrier from the loading chamber to the process chamber;

[0040] Under the action of the radio frequency power system, the process gas is excited into plasma, so that the process gas reacts on the surface of the substrate to be processed to form the silicon nitride film;

[0041] The method of transferring the carrier plate out of the process chamber comprises:

[0042] The carrier is transferred from the process chamber to the unloading chamber by the third transfer mechanism.

[0043] In one embodiment, the carrier plate includes a plurality of supporting frames distributed in an array, a plurality of hollow structures distributed in an array are provided in the supporting frames, and / or a blocking structure for placing the substrate to be processed is provided at an edge of the supporting frame.

[0044] In a second aspect, the present application also provides a thin film deposition device, which is used to perform thin film deposition according to the thin film deposition method described in any of the above embodiments, and the thin film deposition device includes a loading and unloading device, a process chamber, a radio frequency power supply system and a carrier.

[0045] The thin film deposition method in the embodiment of the present application introduces silane and nitrogen source as process gases into the process chamber, and controls the gas flow ratio of silane to nitrogen source to be 0.01-0.5, and excites the process gas into plasma under the action of a radio frequency power system with a frequency configuration of 0.12 MHz-100 MHz, and during the plasma excitation process, controls the radio frequency power density to be 200 W / m 2 ~5000W / m 2 , the reaction temperature is 150℃~400℃, the pressure in the process chamber is 0.5Torr~5Torr, and the vertical distance between the carrier plate and the gas diffusion component is 10mm~50mm, so that the process gas reacts on the surface of the substrate to be processed to form a silicon nitride film, that is, by simultaneously finely regulating the gas flow ratio of the process gas for forming the silicon nitride film, the RF power density, the reaction temperature, the pressure in the process chamber, and the vertical distance between the carrier plate and the gas diffusion component, the formed silicon nitride film has uniform quality, good density and corrosion resistance. In the process of preparing solar cells, it plays a better protective role as a mask, thereby improving the performance and yield of solar cells; in addition, the thin film deposition equipment used for depositing the silicon nitride film in the present application is suitable for large-area deposition, and the required process parameters can be adjusted according to different process requirements and film quality requirements to obtain the best performance film and maximized production capacity. BRIEF DESCRIPTION OF THE DRAWINGS

[0046] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the conventional technology, the drawings required for use in the embodiments or the conventional technology descriptions are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0047] Figure 1 is a schematic flow chart of a thin film deposition method provided in one embodiment;

[0048] Figure 2 A schematic diagram of the structure of a thin film deposition device provided in an embodiment;

[0049] Figure 3 is another schematic diagram of the structure of a thin film deposition device provided in an embodiment;

[0050] Figure 4is a schematic structural diagram of a process chamber provided in an embodiment;

[0051] Figure 5 is a schematic structural diagram of a gas diffuser provided in an embodiment;

[0052] Figure 6 A schematic structural diagram of a gas diffuser provided in an embodiment showing a change in the depth of a depression at the center of a side of the gas diffuser away from the back plate;

[0053] Figure 7 is a schematic structural diagram of a carrier board provided in an embodiment;

[0054] Figure 8 It is a structural schematic diagram of a carrying frame provided in an embodiment;

[0055] Fig. 9 is another structural schematic diagram of a carrying frame provided in an embodiment;

[0056] Fig.10 is another structural schematic diagram of a carrying frame provided in an embodiment;

[0057] Fig.11 It is a structural schematic diagram of a first conveying mechanism provided in an embodiment after conveying the carrier to above the heat support plate;

[0058] Fig.12 It is a structural schematic diagram of a second conveying mechanism provided in an embodiment after conveying the carrier plate to the heat support plate;

[0059] Fig.13 A schematic diagram of a structure of depositing a thin film in a process chamber by a plasma reaction provided in an embodiment;

[0060] Fig.14 It is a structural schematic diagram of a lifting device provided in an embodiment after the carrier plate is lifted to above the second conveying mechanism;

[0061] Fig.15 It is a schematic structural diagram of a lifting device provided in an embodiment after dropping the carrier plate onto the second conveying mechanism.

[0062] Description of reference numerals:

[0063] 1-thin film deposition equipment, 11-process chamber, 111-entry and exit channels, 112-insulating seals, 12-RF power supply system, 13-carrier, 131-carrier frame, 132-blocking structure, 14-gas diffusion assembly, 141-back plate, 142-gas diffuser, 143-gas distribution area, 144-adjusting part, 15-electromagnetic shielding cover, 16-pressure control device, 17-thermal support plate, 18-lifting device, 19-gas supply system, 2A, 2B-loading and unloading devices, 21A-loading and unloading chamber, 22A-first conveying mechanism, 23A-second conveying mechanism, 24A-first heating plate, 21B-loading chamber, 22B-unloading chamber, 23B-third conveying mechanism, 24B-second heating plate. DETAILED DESCRIPTION

[0064] In order to facilitate understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. Embodiments of the present application are provided in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present application more thorough and comprehensive.

[0065] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application.

[0066] In the description of the present application, it should be understood that if the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. appear, the orientation or position relationship indicated by these terms is based on the orientation or position relationship shown in the accompanying drawings, which is only for the convenience of describing the present application and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application.

[0067] In addition, if the terms "first" or "second" appear, these terms are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the features. In the description of this application, if the term "plurality" appears, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0068] In this application, unless otherwise clearly specified and limited, if the terms "installed", "connected", "connected", "fixed" and the like appear, these terms should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integrated connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to the specific circumstances.

[0069] In the present application, unless otherwise clearly specified and limited, if there is a description that a first feature is "above" or "below" a second feature, etc., or similar descriptions appear, it may mean that the first and second features are in direct contact, or that the first and second features are in indirect contact through an intermediate medium. Moreover, the first feature being "above", "above" and "above" the second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. The first feature being "below", "below" and "below" the second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0070] It should be noted that if an element is referred to as being "fixed to" or "disposed on" another element, it may be directly on the other element or there may be a central element. If an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be a central element at the same time. If any, the terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used in this application are for illustrative purposes only and do not represent the only implementation method.

[0071] See also Figure 1 , the present application provides a thin film deposition method, comprising the following steps:

[0072] S1: Provide a substrate to be processed (not shown in the figure) and a thin film deposition device 1, the thin film deposition device 1 includes at least one process chamber 11, a radio frequency power system 12 and a carrier 13, the frequency of the radio frequency power system 12 is configured to be 0.1MHz~100MHz, and a gas diffusion component 14 is also provided in the process chamber 11;

[0073] S2: placing the substrate to be processed on the carrier 13;

[0074] S3: transferring the carrier 13 into the process chamber 11;

[0075] S4: Process gas is introduced into the process chamber 11 through the gas diffusion assembly 14, and the process gas is excited into plasma under the action of the RF power system 12, so that the process gas reacts on the surface of the substrate to be processed to form a silicon nitride film. The process gas includes silane and a nitrogen source, and the gas flow ratio of silane to the nitrogen source is 0.01-0.5. In the plasma excitation process, the RF power density is controlled to be 200W / m 2 ~5000W / m 2 , the reaction temperature is 150° C. to 400° C., the pressure in the process chamber 11 is 0.5 Torr to 5 Torr, and the vertical distance between the carrier plate 13 and the gas diffusion assembly 14 is 10 mm to 50 mm;

[0076] S5 : taking the carrier plate 13 out of the process chamber 11 .

[0077] The above-mentioned thin film deposition method introduces silane and nitrogen source as process gases into the process chamber 11, and controls the gas flow ratio of silane to nitrogen source to be 0.01-0.5, and excites the process gas into plasma under the action of the radio frequency power system 12 with a frequency configuration of 0.1 MHz-100 MHz, and during the plasma excitation process, controls the radio frequency power density to be 500 W / m 2 ~5000W / m 2 , the reaction temperature is 150°C~400°C, the pressure in the process chamber 11 is 0.5Torr~5Torr, and the vertical distance between the carrier 13 and the gas diffusion assembly 14 is 10mm~50mm, so that the process gas reacts on the surface of the substrate to be processed to form a silicon nitride film, that is, by simultaneously finely regulating the gas flow ratio of the process gas for forming the silicon nitride film, the RF power density, the reaction temperature, the pressure in the process chamber 11, and the vertical distance between the carrier 13 and the gas diffusion assembly 14, the formed silicon nitride film has uniform quality, good density and corrosion resistance. In the process of preparing solar cells, it plays a better protective role as a mask, thereby improving the yield of solar cells; in addition, the thin film deposition equipment 1 used in the present application for depositing silicon nitride film is suitable for large-area deposition, and the required process parameters can be adjusted according to different process requirements and film quality requirements to obtain the best performance film and maximized production capacity.

[0078] See also Figures 2 to 10 , execute step S1, provide a substrate to be processed and a thin film deposition device 1, the thin film deposition device 1 includes at least one process chamber 11, a radio frequency power supply system 12 and a carrier 13, the frequency of the radio frequency power supply system 12 is configured to be 0.1MHz~100MHz, and a gas diffusion component 14 is also provided in the process chamber 11.

[0079] In some embodiments, Figure 2 and Figure 4 As shown, the RF power system 12 includes an RF power supply and a matching matcher, which work together to feed RF power to the gas diffusion assembly 14, so that the gas diffusion assembly 14 and the grounded carrier plate 13 or the heat support plate 17 form a high-frequency electromagnetic field to ionize the process gas into plasma. It should be noted that when the frequency of the RF power system 12 is too small or too large, the film layer of the formed film will be of poor quality and it is difficult to meet the production requirements. Therefore, by configuring the frequency of the RF power system 12 to 0.1MHz~100MHz, the production requirements can be met, thereby ensuring the film layer quality of the formed film.

[0080] like Figure 4 As shown, the thin film deposition device 1 further includes an electromagnetic shielding cover 15, which is used to protect the radio frequency power supply system 12 from external electromagnetic interference to ensure that the device can operate stably.

[0081] like Figures 2 to 3 As shown, the process chamber 11 is used to provide an environment for the process gas to react and thin film deposition. In some embodiments, the thin film deposition equipment 1 further includes a pressure control device 16, which is used to control the pressure in the process chamber 11. Since the pressure in the process chamber 11 affects the density and energy distribution of the plasma, and thus affects the efficiency of the thin film deposition process, and thus affects the quality of the thin film, the pressure in the process chamber 11 can be regulated to a desired range by the pressure control device 16. It should be noted that the pressure control device 16 can control multiple chambers, or a pressure control device 16 can be separately provided for each chamber, which will not be further described here.

[0082] In addition, if Figure 4 As shown, at least one inlet and outlet channel 111 is further provided on the side wall of the process chamber 11 for the carrier 13 to enter and exit. When the process gas is introduced into the process chamber 11, the inlet and outlet channel 111 is in a closed state, and the pressure control device 16 can regulate the pressure in the process chamber 11 to be within a desired range. The pressure control device 16 includes a vacuum pump or other suitable components.

[0083] In some embodiments, Figures 2 to 4 As shown, the thin film deposition equipment 1 also includes a heat support plate 17, which is located in the process chamber 11. The heat support plate 17 is used to support the carrier 13 and heat the substrate to be processed to the reaction temperature, and the heat support plate 17 can be raised and lowered in the process chamber 11. The thin film deposition equipment 1 also includes a lifting device 18, which can lift the heat support plate 17 to lift the carrier 13, thereby adjusting the distance between the carrier 13 and the gas diffusion assembly 14, which helps to adjust the electric field and flow field in the process chamber 11, thereby improving the uniformity and quality of the formed film.

[0084] In some embodiments, Figure 4 As shown, the gas diffusion assembly 14 at least includes a back plate 141 connected to the RF power system 12 and a gas diffuser 142 installed on the back plate 141 , a gas distribution area 143 is formed between the back plate 141 and the gas diffuser 142 , and a plurality of gas diffusion channels are provided on the gas diffuser 142 .

[0085] In addition, if Figures 2 to 4 As shown, the thin film deposition equipment 1 also includes a gas supply system 19, which is connected to the back plate 141 and is used to supply process gas to the gas distribution area 143; an insulating seal 112 is also provided between the side wall of the process chamber 11 and the back plate 141 to ensure the sealing of the process chamber 11.

[0086] The gas diffuser 142 and the carrier 13 form a capacitively coupled flat plate discharge structure, and the potential difference between each point on the lower surface of the gas diffuser 142 and the carrier 13 is equal. The RF power system 12 generates a high-frequency electromagnetic field to ionize and excite the process gas flowing out of the gas diffuser 142 in the space between the gas diffuser 142 and the carrier 13 to form a plasma, and then deposit a thin film on the surface of the substrate to be processed.

[0087] In some embodiments, Figure 5 As shown, the center of the side of the gas diffuser 142 away from the back plate 141 is recessed relative to the edge, and the recessed shape of the side of the gas diffuser 142 away from the back plate 141 is arc-shaped or step-shaped.

[0088] In some embodiments, Figure 4 As shown, the gas diffuser assembly 14 further includes an adjusting portion 144, which penetrates the back plate 141 and is connected to the gas diffuser 142. The adjusting portion 144 is used to form a depression at the center of the side of the gas diffuser 142 away from the back plate 141 and adjust the depression depth of the side of the gas diffuser 142 away from the back plate 141. The adjusting portion 144 includes an adjusting bolt or other suitable device.

[0089] That is, by directly designing the center of the side of the gas diffuser 142 away from the back plate 141 to be recessed relative to the edge or by providing an adjustment portion 144 to form a recess in the center of the side of the gas diffuser 142 away from the back plate 141, the distance between the gas diffuser 142 and the carrier 13 can be increased compared to when the gas diffuser 142 is a planar structure.

[0090] Among them, when the gas diffuser 142 is a planar structure, the corresponding uniformity distribution of the deposited silicon nitride film is that the film layer in the central area is thicker. Since the potential difference between the gas diffuser 142 and the carrier 13 is unchanged, when the center of the side of the gas diffuser 142 away from the back plate 141 is recessed relative to the edge, the depth of the recessed area is greater than the periphery. Therefore, the electric field strength between the central recessed area of ​​the gas diffuser 142 and the carrier 13 is lower than when the gas diffuser 142 is a planar structure. Therefore, the plasma density in the central recessed area of ​​the gas diffuser 142 is reduced, the film deposition thickness in the central area is reduced, the phenomenon of thick silicon nitride film deposition in the central area is improved, and the uniformity of film deposition is optimized.

[0091] Exemplarily, the deeper the depression formed at the center of one side of the gas diffuser 142 away from the back plate 141 , that is, the greater the distance between the gas diffuser 142 and the carrier plate 13 , the thinner the corresponding film deposition thickness at that location.

[0092] Therefore, if Figure 6 As shown, when the recessed depth of the side of the gas diffuser 142 away from the back plate 141 is adjusted by the adjusting portion 144, the center of the side of the gas diffuser 142 away from the back plate 141 can be pulled up by the adjusting portion 144, as shown in FIG. Figure 6 As shown in FIG. 1 (a), when the gas diffuser 142 is a planar structure and the adjustment portion 144 is not pulled up, the initial depression depth d=0, as shown in FIG. Figure 6 As shown in FIG. 1( b ), by pulling up the adjusting portion 144 , the d value increases, and the side of the gas diffuser 142 away from the back plate 141 is transformed from a central plane structure to a central concave structure. 2 Taking the process chamber of a planar gas diffuser 142 of size as an example, the maximum value, minimum value and uniformity of the thickness of the prepared silicon nitride film corresponding to different d values ​​are shown in Table 1.

[0093] Table 1

[0094]

[0095] According to the above results, it can be seen that by adjusting the depression depth d through the adjustment part 144, as the d value increases, the maximum thickness and the minimum thickness of the deposited silicon nitride film become closer, and the uniformity of the film is better. That is, by adjusting the depression depth at the center of the side of the gas diffuser 142 away from the back plate 141, it helps to form a film with more uniform thickness.

[0096] In addition, if Figure 6 As shown in FIG. 2( c ), when the center of the side of the gas diffuser 142 away from the back plate 141 is concave, as shown in FIG. Figure 6As shown in FIG. 5( d ), by pulling up the adjusting portion 144 , the depth of the central depression can be further increased to increase the value d. The adjusting portion 144 can be used to flexibly adjust the depression depth of the center of the side of the gas diffuser 142 away from the back plate 141 .

[0097] In some embodiments, a dielectric plate (not shown) is also installed on the gas diffuser 142, and the dielectric plate is located below the side of the gas diffuser 142 away from the back plate 141. When the side of the gas diffuser 142 away from the back plate 141 has a depression, there is a gap between the dielectric plate and the side of the gas diffuser 142 away from the back plate 141, and the distance of the gap gradually decreases from the center to the edge of the gas diffuser 142. During the operation of the electrode, the influence of the lateral standing wave effect of the radio frequency signal can be weakened, and a uniform electric field can be formed between the gas diffuser 142 and the dielectric plate, which can improve the center thickening phenomenon of the deposited film and optimize the uniformity of the film deposition. The dielectric plate is a material with a relative dielectric constant in the range of 2 to 1000.

[0098] In some embodiments, Figure 2 As shown, the thin film deposition device 1 also includes a loading and unloading device 2A, which is used to enable the carrier 13 to enter and exit the process chamber 11. The loading and unloading device 2A includes a loading and unloading chamber 21A, a first conveying mechanism 22A and a second conveying mechanism 23A. The loading and unloading chamber 21A and the process chamber 11 are arranged in sequence. Among them, a valve is also provided on the side wall of the loading and unloading chamber 21A, which is used as a channel for the carrier 13 to enter and exit the loading and unloading chamber 21A; a first heating plate 24A arranged in parallel is provided in the loading and unloading chamber 21A, which is used to preheat the substrate to be processed to ensure that the reaction temperature of the substrate to be processed can be quickly reached later, and it is conducive to removing the impurities adsorbed by the carrier 13 in the external environment; in addition, the loading and unloading chamber 21A can also maintain a high vacuum environment in the chamber through the pressure control device 16 to avoid the influence of impurity gases, and the loading and unloading chamber 21A and the process chamber 11 share the inlet and outlet channel 111.

[0099] Meanwhile, the first conveying mechanism 22A and the second conveying mechanism 23A partially adopt roller transmission to drive the carrier 13 to enter and exit the process chamber 11, and the rollers of the first conveying mechanism 22A or the second conveying mechanism 23A located in the process chamber 11 can be extended and retracted along the central axis direction of the rollers.

[0100] In other embodiments, Figure 3As shown, the thin film deposition device 1 further includes a loading and unloading device 2B, which is used to enable the carrier 13 to enter and exit the process chamber 11. The loading and unloading device 2B includes a loading chamber 21B, an unloading chamber 22B and a third conveying mechanism 23B, and the loading chamber 21B, the process chamber 11 and the unloading chamber 22B are arranged in sequence. The third conveying mechanism 23B drives the carrier 13 to pass through the loading chamber 21B, the process chamber 11 and the unloading chamber 22B in sequence. Among them, a valve is also provided on the side wall of the loading chamber 21B, which is used as a channel for the carrier 13 to enter the loading chamber 21B; two second heating plates 24B arranged in parallel are provided in the loading chamber 21B, which are used to preheat the substrate to be processed to ensure that the reaction temperature of the substrate to be processed can be quickly reached later, and it is beneficial to remove the impurities adsorbed by the carrier in the external environment; in addition, the loading chamber 21B can also maintain a high vacuum environment in the cavity through the pressure control device 16 to avoid the influence of impurity gases; the unloading chamber 22B side wall is also provided with a valve, which is used as a channel for the carrier 13 to exit the unloading chamber 22B; the unloading chamber 22B can also control the required pressure in the cavity through the pressure control device 16, and the loading chamber 21B and the unloading chamber 22B are respectively connected to the two inlet and outlet channels 111 of the process chamber 11.

[0101] Therefore, according to the actual process requirements, the loading and unloading devices 2A and 2B with suitable structures can be selected to meet the actual process requirements. Among them, when the loading and unloading device 2A includes a loading and unloading chamber 21A, a first conveying mechanism 22A and a second conveying mechanism 23A, the floor space of the thin film deposition equipment 1 can be greatly reduced, which helps to reduce production costs.

[0102] In some embodiments, Figure 7 As shown, the carrier 13 includes a plurality of supporting frames 131 distributed in an array for placing substrates to be processed, wherein the supporting frames 131 may be a solid groove structure or a vertically through structure.

[0103] In the prior art, in order to avoid the phenomenon of wrap-around plating, that is, when a thin film is deposited on one side of the substrate to be processed, a small amount of thin film is also formed on the other side of the substrate to be processed, the carrier frame 131 mostly adopts a solid groove structure. In the present application, because the mask will be partially removed in the subsequent removal process, it does not need to consider the technical problems caused by wrap-around plating, and at the same time, considering that the substrate to be processed can be heated quickly, therefore, preferably, the carrier frame 131 adopts a vertically through structure. Figures 8 to 10 As shown, the carrying frame 131 adopts a vertically penetrating structure. Figure 8 As shown, the center of the carrier frame 131 is completely hollowed out, and only the edge has an upper and lower overlapping area with the substrate to be processed, and the area is provided with a blocking structure 132 for supporting the substrate to be processed. Compared with the carrier frame 131 with a solid groove structure in the prior art, the carrier frame 131 with a vertically through structure can quickly heat the substrate to be processed.

[0104] In addition, preferably, Fig. 9 and Fig.10 As shown, the carrying frame 131 is a hollow carrying frame 131 of a graphic structure, and most of the area of ​​the carrying frame 131 is hollowed out, which ensures the rapid heating of the substrate to be processed and can effectively prevent the fragments of the substrate to be processed from falling and affecting the process. In addition, a blocking structure 132 is also provided at the edge of the carrying frame 131. By setting a blocking structure 132 for placing the substrate to be processed at the edge of the carrier 13, it can effectively prevent the substrate to be processed from sliding when the carrier 13 carries the substrate to be processed, and ensure that the substrate to be processed is limited in the carrying frame 131 during the transmission and process. The carrier 13 also includes a tray (not shown) and a frame (not shown). The tray is located at the top, and the surface is provided with a carrying frame 131 to prevent the substrate to be processed from sliding. The frame is located at the bottom, and is composed of a plurality of strip structures to form a mesh structure, which is used to support the tray, reduce the deformation of the carrier 13 caused by loading the substrate to be processed and its own gravity, and maintain a good flatness of the carrier 13.

[0105] See also Figures 11 to 15 , perform steps S2 to S5, place the substrate to be processed on the carrier 13; transfer the carrier 13 to the process chamber 11; introduce process gas into the process chamber 11 through the gas diffusion component 14, and under the action of the radio frequency power supply system 12, excite the process gas into plasma, so that the process gas reacts on the surface of the substrate to be processed to form a silicon nitride film, the process gas includes silane and a nitrogen source, the gas flow ratio of silane to the nitrogen source is 0.01-0.5, and during the plasma excitation process, the radio frequency power density is controlled to be 200W / m 2 ~5000W / m 2 , the reaction temperature is 150° C. to 400° C., the pressure in the process chamber 11 is 0.5 Torr to 5 Torr, and the vertical distance between the carrier plate 13 and the gas diffusion assembly 14 is 10 mm to 50 mm; the carrier plate 13 is transferred out of the process chamber 11 .

[0106] In some embodiments, Figure 2 And such as Figures 11 to 15 As shown, the thin film deposition device 1 also includes a loading and unloading device 2A, which is used to enable the carrier 13 to enter and exit the process chamber 11. The loading and unloading device 2A includes a loading and unloading chamber 21A, a first conveying mechanism 22A and a second conveying mechanism 23A. The loading and unloading chamber 21A and the process chamber 11 are arranged in sequence to deliver the carrier 13 into the process chamber 11, specifically including:

[0107] The carrier 13 is transferred from the loading and unloading chamber 21A to the process chamber 11 by the first transfer mechanism 22A;

[0108] Under the action of the radio frequency power system 12, the process gas is excited into plasma, so that the process gas reacts on the surface of the substrate to be processed to form a silicon nitride film; at this time, the inlet and outlet channels 111 on the side wall of the process chamber 11 are in a closed state;

[0109] The carrier plate 13 is transferred out of the process chamber 11, comprising:

[0110] The carrier 13 is transferred from the process chamber 11 back to the loading and unloading chamber 21A by the second transfer mechanism 23A.

[0111] In some embodiments, the first conveying mechanism 22A and the second conveying mechanism 23A are partially driven by rollers to drive the carrier 13 to enter and exit the process chamber 11, and the rollers of the second conveying mechanism 23A located in the process chamber 11 can be extended and retracted along the central axis of the rollers;

[0112] The method of using the first conveying mechanism 22A to convey the carrier 13 from the loading and unloading chamber 21A to the process chamber 11 specifically includes:

[0113] The carrier 13 is transported into the loading and unloading chamber 21A through the first conveying mechanism 22A, wherein when the carrier 13 enters the loading and unloading chamber 21A, the valve on the side wall of the loading and unloading chamber 21A adjacent to the atmosphere is in an open state, and the inlet and outlet channel 111 on the side wall of the process chamber 11 is in a closed state; after the carrier 13 enters the loading and unloading chamber 21A, the valve on the side wall of the loading and unloading chamber 21A adjacent to the atmosphere and the inlet and outlet channel 111 on the side wall of the process chamber 11 are in a closed state, and the first heating plate 24A is used to preheat the substrate to be processed, and the pressure control device 16 is used to evacuate the loading and unloading chamber 21A;

[0114] The carrier 13 is then transferred into the process chamber 11 by the first conveying mechanism 22A, and the inlet and outlet passage 111 on the side wall of the process chamber 11 is in an open state. The lifting device 18 is then used to lift the heat support plate 17, so that the carrier 13 falls onto the heat support plate 17. At this time, the roller of the second conveying mechanism 23A in the process chamber 11 is in a retracted state, the roller is close to one side of the chamber wall of the process chamber 11, and the inlet and outlet passage 111 on the side wall of the process chamber 11 is in a closed state.

[0115] The lifting device 18 adjusts the height of the heat support plate 17, and then adjusts the distance between the carrier plate 13 and the gas diffusion assembly 14 to the process requirement value, and then under the action of the radio frequency power system 12, the process gas is excited into plasma, so that the process gas reacts on the surface of the substrate to be processed to form a silicon nitride film, completing the film deposition process;

[0116] The carrier 13 is transferred from the process chamber 11 back to the loading and unloading chamber 21A by the second transfer mechanism 23A, specifically including:

[0117] The lifting device 18 adjusts the height of the heat support plate 17, and the roller of the second conveying mechanism 23A extends into the process chamber 11 to lower the height of the heat support plate 17 so that the carrier plate 13 on the heat support plate 17 falls onto the roller of the second conveying mechanism 23A;

[0118] The step of extending the roller of the second conveying mechanism 23A into the process chamber 11 so that the carrier 13 falls onto the roller of the second conveying mechanism 23A may specifically include: using the lifting device 18 to raise the heat support plate 17 to above the roller of the second conveying mechanism 23A, extending the roller of the second conveying mechanism 23A into the process chamber 11, and using the lifting device 18 to lower the heat support plate 17 so that the carrier 13 falls onto the roller of the second conveying mechanism 23A;

[0119] The carrier plate 13 dropped onto the roller of the second conveying mechanism 23A is transferred from the process chamber 11 to the loading and unloading chamber 21A by the second conveying mechanism 23A.

[0120] In other embodiments, Figure 3 As shown, the thin film deposition device 1 also includes a loading and unloading device 2B, which is used to enable the carrier 13 to enter and exit the process chamber 11. The loading and unloading device 2B includes a loading chamber 21B, an unloading chamber 22B and a third conveying mechanism 23B. The loading chamber 21B, the process chamber 11 and the unloading chamber 22B are arranged in sequence.

[0121] The carrier plate 13 is sent into the process chamber 11, comprising:

[0122] The carrier 13 is transferred from the loading chamber 21B to the process chamber 11 by the third transfer mechanism 23B, wherein the transfer of the carrier 13 from the loading chamber 21B to the process chamber 11 by the third transfer mechanism 23B specifically includes: transferring the carrier 13 into the loading chamber 21B through the third transfer mechanism 23B, and then transferring the carrier 13 into the process chamber 11 through the third transfer mechanism 23B, wherein when the carrier 13 enters the loading chamber 21B, the valve of the side wall of the loading chamber 21B adjacent to the atmosphere is opened; after the carrier 13 is transferred into the loading chamber 21B, the valve of the side wall of the loading chamber 21B adjacent to the atmosphere is closed, and the second heating plate 24B is used to preheat the substrate to be processed, and the pressure control device 16 is used to evacuate the loading chamber 21B; when the carrier 13 enters the process chamber 11, the inlet and outlet channel 111 on one side of the process chamber 11 is opened; after the carrier 13 enters the process chamber 11, the inlet and outlet channel 111 on one side of the process chamber 11 is closed;

[0123] Under the action of the radio frequency power system 12, the process gas is excited into plasma, so that the process gas reacts on the surface of the substrate to be processed to form a silicon nitride film;

[0124] The carrier plate 13 is transferred out of the process chamber 11, comprising:

[0125] The carrier 13 is transferred from the process chamber 11 to the unloading chamber 22B by the third transfer mechanism 23B. When the carrier 13 leaves the process chamber 11 , the inlet and outlet passage 111 on the other side of the process chamber 11 is opened.

[0126] In some embodiments, introducing process gas into the process chamber 11 through the gas diffusion assembly 14 includes:

[0127] The process gas is introduced into the gas distribution area 143 from the outside, namely the gas supply system 19 , and diffused to the area below the gas diffuser 142 in the process chamber 11 through the gas diffusion channel.

[0128] In some embodiments, the nitrogen source includes at least one of nitrogen and ammonia, or other suitable nitrogen source gases may be selected according to actual conditions.

[0129] In some embodiments, when the introduced process gas contains silane and nitrogen, the gas flow ratio of the introduced silane to nitrogen is controlled to be 0.01-0.5.

[0130] In other embodiments, when the introduced process gas contains silane and ammonia, the gas flow ratio of the introduced silane to ammonia is controlled to be 0.01-0.3.

[0131] The gas flow ratio of silane to nitrogen source determines the stoichiometric ratio of the formed film, which in turn can affect the electrical and optical properties of the film. Therefore, the present application helps control the diffusion and deposition rate of silane and nitrogen source by precisely regulating the gas flow ratio of silane to nitrogen source, thereby improving the uniformity and density of the film and achieving the deposition of high-quality films.

[0132] For example, when the process gas is introduced into the process chamber 11 , the depression depth of the center of the side of the gas diffuser 142 away from the back plate 141 can be adjusted by the adjustment portion 144 , so that uniform deposition of the thin film can be achieved.

[0133] In addition, when the process gas is introduced, the process conditions for forming the thin film are in the optimal state by further controlling the RF power density, the reaction temperature of the surface of the substrate to be processed, the vertical distance between the carrier 13 and the gas diffusion assembly 14, and the pressure in the process chamber 11, thereby further improving the quality of the formed thin film.

[0134] It should be understood that although Figure 1 The steps in the flowchart are shown in sequence as indicated by the arrows, but these steps are not necessarily executed in the order indicated by the arrows. Unless otherwise specified in this document, there is no strict order restriction for the execution of these steps, and these steps can be executed in other orders. Moreover, Figure 1At least part of the steps may include multiple steps or multiple stages. These steps or stages are not necessarily performed at the same time, but can be performed at different times. The execution order of these steps or stages is not necessarily sequential, but can be performed in turn or alternately with other steps or at least part of the steps or stages in other steps.

[0135] Please continue reading Figures 2 to 3 The present application also provides a thin film deposition device 1, and the thin film deposition device 1 is used for thin film deposition according to the above-mentioned thin film deposition method. The thin film deposition device 1 includes any one of the loading and unloading devices 2A or 2B, a process chamber 11, a radio frequency power supply system 12 and a carrier 13.

[0136] In some embodiments, a gas diffusion assembly 14 is further provided in the process chamber 11, and the thin film deposition equipment also includes an electromagnetic shielding cover 15, a heat support plate 17, a lifting device 18, a pressure control device 16 and a gas supply system 19. It should be noted that the detailed introduction of the various parts of the structure of the thin film deposition equipment 1 can refer to the various parts of the structure of the thin film deposition equipment 1 introduced in the above-mentioned thin film deposition method embodiment, and will not be repeated here.

[0137] The thin film deposition device 1 used to deposit silicon nitride thin films is suitable for large-area deposition and can also adjust the required process parameters according to different process requirements and film quality requirements to obtain the best performance film and maximize production capacity.

[0138] In the description of this specification, the description with reference to the terms "some embodiments", "other embodiments", "ideal embodiments", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic descriptions of the above terms do not necessarily refer to the same embodiment or example.

[0139] The technical features of the above-mentioned embodiments can be combined arbitrarily. In order to make the description concise, not all possible combinations of the technical features of the above-mentioned embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0140] The above-described embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be construed as limiting the scope of the patent application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent application shall be subject to the attached claims.

Claims

1. A thin film deposition method, characterized in that: The following steps are involved: Provide a substrate to be processed and a thin film deposition device, wherein the thin film deposition device comprises at least one process chamber, a radio frequency power supply system and a carrier plate, wherein the frequency of the radio frequency power supply system is configured to be 0.1 MHz to 100 MHz, and a gas diffusion component is also provided in the process chamber; Placing the substrate to be processed on the carrier; transferring the carrier into the process chamber; The process gas is introduced into the process chamber through the gas diffusion component, and the process gas is excited into plasma under the action of the radio frequency power supply system, so that the process gas reacts on the surface of the substrate to be processed to form a silicon nitride film, the process gas includes silane and a nitrogen source, the gas flow ratio of the silane to the nitrogen source is 0.01-0.5, and during the plasma excitation process, the radio frequency power density is controlled to be 200W / m 2 ~5000W / m 2 , the reaction temperature is 150° C. to 400° C., the pressure in the process chamber is 0.5 Torr to 5 Torr, and the vertical distance between the carrier plate and the gas diffusion assembly is 10 mm to 50 mm; The carrier is transferred out of the process chamber.

2. The thin film deposition method according to claim 1, characterized in that: The nitrogen source includes at least one of nitrogen and ammonia. When the process gas introduced contains silane and nitrogen, the gas flow ratio of the silane to the nitrogen is controlled to be 0.01~0.5; when the process gas introduced contains silane and ammonia, the gas flow ratio of the silane to the ammonia is controlled to be 0.01~0.

3.

3. The thin film deposition method according to claim 1, characterized in that: The thin film deposition equipment further comprises: A heat support plate, located in the process chamber, and used to support the carrier plate and heat the substrate to be processed to a reaction temperature; A lifting device, used to lift the heat support plate to lift the carrier plate and adjust the vertical distance between the carrier plate and the gas diffusion assembly; A pressure control device is used to control the pressure in the process chamber.

4. The thin film deposition method according to claim 1, characterized in that: The gas diffusion assembly at least includes a back plate connected to the radio frequency power system and a gas diffuser mounted on the back plate, the back plate and the gas diffuser together form a gas distribution area, and the gas diffuser is provided with a plurality of gas diffusion channels, The step of introducing the process gas into the process chamber through the gas diffusion assembly comprises: The process gas is introduced into the gas distribution area from the outside, and the process gas is diffused to the area below the gas diffuser in the process chamber through the gas diffusion channel.

5. The thin film deposition method according to claim 4, characterized in that: The center of the side of the gas diffuser away from the back plate is recessed relative to the edge, and the recessed shape of the side of the gas diffuser away from the back plate is arc-shaped or step-shaped.

6. The thin film deposition method according to claim 4, characterized in that: The gas diffusion assembly also includes an adjustment portion, which passes through the back plate and is connected to the gas diffuser. The adjustment portion is used to form a depression at the center of the side of the gas diffuser away from the back plate and adjust the depression depth of the center of the side of the gas diffuser away from the back plate.

7. The thin film deposition method according to claim 4, characterized in that: A dielectric plate is also installed on the gas diffuser, and the dielectric plate is located below the side of the gas diffuser away from the back plate. When the side of the gas diffuser away from the back plate has a depression, there is a gap between the dielectric plate and the side of the gas diffuser away from the back plate, and the distance of the gap gradually decreases from the center to the edge along the gas diffuser.

8. The thin film deposition method according to claim 1, characterized in that: The thin film deposition equipment further includes a loading and unloading device, which is used to enable the carrier to enter and exit the process chamber. The loading and unloading device includes a loading and unloading chamber, a first conveying mechanism, and a second conveying mechanism. The loading and unloading chamber and the process chamber are arranged in sequence. The step of sending the carrier into the process chamber comprises: Using the first conveying mechanism to convey the carrier from the loading and unloading chamber to the process chamber; Under the action of the radio frequency power system, the process gas is excited into plasma, so that the process gas reacts on the surface of the substrate to be processed to form the silicon nitride film; The method of transferring the carrier plate out of the process chamber comprises: The carrier is transferred from the process chamber back to the loading and unloading chamber by the second transfer mechanism.

9. The thin film deposition method according to claim 8, characterized in that: The first conveying mechanism and the second conveying mechanism are partially driven by rollers to drive the carrier plate to enter and exit the process chamber, and the rollers of the first conveying mechanism or the second conveying mechanism located in the process chamber can be extended and retracted along the central axis direction of the rollers; Wherein, using the first conveying mechanism to convey the carrier from the loading and unloading chamber to the process chamber specifically includes: Transmitting the carrier into the loading and unloading chamber through the first conveying mechanism; Then, the carrier is transferred into the process chamber by the first conveying mechanism; The step of transferring the carrier from the process chamber back to the loading and unloading chamber by the second transfer mechanism specifically includes: Extending the roller of the second conveying mechanism into the process chamber and lowering the heat support plate so that the carrier plate on the heat support plate falls onto the roller of the second conveying mechanism; The carrier plate dropped onto the roller of the second conveying mechanism is transferred from the process chamber to the loading and unloading chamber through the second conveying mechanism.

10. The thin film deposition method according to claim 1, characterized in that: The thin film deposition equipment further includes a loading and unloading device, which is used to enable the carrier to enter and exit the process chamber. The loading and unloading device includes a loading chamber, an unloading chamber, and a third conveying mechanism. The loading chamber, the process chamber, and the unloading chamber are arranged in sequence. Sending the carrier into the process chamber comprises: Using the third conveying mechanism to convey the carrier from the loading chamber to the process chamber; Under the action of the radio frequency power system, the process gas is excited into plasma, so that the process gas reacts on the surface of the substrate to be processed to form the silicon nitride film; The method of transferring the carrier plate out of the process chamber comprises: The carrier is transferred from the process chamber to the unloading chamber by the third transfer mechanism.

11. The thin film deposition method according to claim 1, characterized in that: The carrier plate includes a plurality of supporting frames distributed in an array, a plurality of hollow structures distributed in an array are arranged inside the supporting frames, and / or a blocking structure for placing the substrate to be processed is arranged at an edge of the supporting frame.

12. A thin film deposition device, used for thin film deposition according to the thin film deposition method described in any one of claims 1 to 11, the thin film deposition device comprising a loading and unloading device, a process chamber, a radio frequency power supply system and a carrier.

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