Adsorption film for chemical mechanical polishing

By designing an adsorption film with a concave circular structure and optimizing its structural dimension relationship, the problems of complex structure and cumbersome operation in the prior art are solved, uniform holding and efficient grinding of the wafer are achieved, and the thickness uniformity of the wafer is improved.

CN119871215APending Publication Date: 2025-04-25NINGBO RUNPING ELECTRONIC MATERIALS CO LTD
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Patent Information

Application Number
CN202510226598.4
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-02-27
Publication Date
2025-04-25

AI Technical Summary

Technical Problem

The existing chemical mechanical grinding technology has complex structure and cumbersome operation, which may lead to uneven pressure conduction distribution and poor wafer plane uniformity.

Method used

An adsorption film for chemical mechanical grinding is designed, which is a concave circular structure, including a bottom plate, a side wall and a cross plate. By optimizing the dimensional relationship of these structures, uniform holding and pressure conduction of the wafer are achieved.

Benefits of technology

The good loading and unloading effect of 200mm wafer is achieved, and the good grinding effect of chemical mechanical grinding is ensured, so that the thickness uniformity of the wafer after grinding is controlled within ±0.01um.

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Abstract

The invention provides an adsorption film for chemical mechanical polishing. The adsorption film is of a concave circular structure. The concave circular structure comprises a bottom plate and a side wall; a transverse plate is fixedly arranged at the top end of the side wall; a rib position is arranged at the end, close to the center line of the concave circular structure, of the transverse plate. Through the design of the adsorption film, when the adsorption film is used for grinding a 200mm wafer, good loading and unloading effects can be achieved, a good fixing effect on the wafer is achieved, pressure conduction of the adsorption film on the wafer is further improved, and then it is guaranteed that chemical mechanical grinding has a good grinding effect; and the ground wafer has excellent thickness uniformity.
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Description

Technical Field

[0001] The invention belongs to the technical field of chemical mechanical polishing, and in particular relates to an adsorption film used for chemical mechanical polishing. Background Art

[0002] In the electronics industry, wafer-related processing is very important, in which the surface of the wafer must be ground to obtain better flatness. Usually, a chemical mechanical grinder is used to properly grind the surface of the wafer to remove impurities on the surface of the wafer and obtain better surface flatness. Usually, such chemical mechanical grinders are equipped with at least one carrier head, which can be used to adsorb the wafer to be ground onto the grinding pad and support the wafer so that it will not fall off the carrier head during the grinding process. In addition, the carrier head needs to apply uniform and appropriate downward pressure to the wafer during the grinding process so that the wafer can obtain a surface with higher true flatness after grinding, which is helpful for subsequent wafer processing.

[0003] At present, CN 101879700A discloses a chemical mechanical polishing element, a wafer polishing method and a wafer polishing system, wherein a chemical mechanical polishing (CMP) element for processing wafers comprises a plate for supporting a wafer to be processed in an upward direction; a polishing head facing the plate, wherein the polishing head comprises a rotatable polishing pad, and when the polishing pad rotates, the polishing pad can be operated to contact the wafer; and a polishing slurry coating system for providing polishing slurry to the polishing pad to polish the wafer. CN110394727A discloses a wafer grinding control method and device, and a grinding equipment, which can control a grinder to grind mass-produced wafers under set grinding parameters. When it is necessary to start monitoring of a test wafer, the grinder is controlled to grind the test wafer under the set grinding parameters. A first overall thickness deviation of the test wafer after grinding can be obtained through a dedicated measuring device, and updated grinding parameters can be obtained based on the first overall thickness deviation. The updated grinding parameters are used as set grinding parameters to control the grinder to grind mass-produced wafers, thereby obtaining wafers with more uniform thickness, thereby improving the flatness of the wafers after grinding.

[0004] Although the above patent document provides a chemical mechanical polishing method, the method provided is complex in structure and cumbersome in operation, which may cause the risk of uneven pressure conduction distribution or poor wafer plane uniformity.

[0005] Therefore, it is necessary to provide an adsorption film to achieve efficient polishing of the wafer. Summary of the invention

[0006] In view of the shortcomings of the prior art, the purpose of the present invention is to provide an adsorption film for chemical mechanical polishing. The present invention, through the design of the adsorption film, can achieve good loading and unloading effects when using the adsorption film for 200mm wafer polishing, has a good holding effect on the wafer, further increases the pressure conduction of the adsorption film on the wafer, and thus ensures that the chemical mechanical polishing has a good polishing effect.

[0007] In order to achieve the purpose of the invention, the present invention adopts the following technical solutions:

[0008] The present invention provides an adsorption film for chemical mechanical polishing, wherein the adsorption film is a concave circular structure;

[0009] The concave circular structure includes a bottom plate and a side wall;

[0010] A transverse plate is fixedly arranged at the top end of the side wall; a rib is arranged at one end of the transverse plate close to the center line of the concave circular structure.

[0011] The adsorption film provided by the present invention has the appearance of a uncovered cylindrical barrel, and the internal recessed position is used to install a grinding head. It has a simple structure and is easy to operate. After the adsorption film is installed on the grinding head, an empty cavity is formed inside the concave circular structure. During use, the bottom plate is evenly expanded by inflating the cavity, thereby achieving pressure applied downward to the wafer, thereby achieving chemical mechanical grinding of the wafer.

[0012] As a preferred technical solution of the present invention, the material of the concave circular structure includes silicone.

[0013] Preferably, the depression depth of the concave circular structure is 0.1 to 9 mm, for example, 0.1 mm, 1 mm, 2 mm, 3 mm, 5 mm, 7 mm or 9 mm, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0014] As a preferred technical solution of the present invention, the length of the horizontal plate is 5 to 15 times the thickness of the side wall, for example, it can be 5 times, 7 times, 9 times, 11 times, 13 times or 15 times, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0015] Preferably, the side wall thickness is 1.5 to 3 times the thickness of the bottom plate, for example, it may be 1.5 times, 1.8 times, 2.1 times, 2.4 times, 2.7 times or 3 times, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0016] In the present invention, by limiting the dimensional relationship between the side wall thickness, the bottom plate thickness and the cross plate length, the uniformity of the pressure of the adsorption film on the wafer is achieved, thereby making the grinding rate of the edge and the center the same during the chemical mechanical grinding process.

[0017] Furthermore, by optimizing the dimensional relationship between the length of the horizontal plate and the thickness of the side wall, the pressure conduction at the edge portion reaches an optimal state; if the length of the horizontal plate is too long, the adsorption head cannot be installed, and the chemical mechanical polishing process cannot be completed; conversely, if the length of the horizontal plate is too short, it will cause air leakage, and the pressure during the polishing process will be too low.

[0018] The lateral loss of edge pressure is resisted by optimizing the dimensional relationship between the side wall thickness and the bottom plate thickness; if the side wall thickness is too thick, it will lead to excessive pressure during the grinding process; conversely, if the side wall thickness is too thin, it will lead to too little pressure during the grinding process.

[0019] As a preferred technical solution of the present invention, the connection angle between the bottom plate and the side wall is provided with an inner fillet on one side close to the center line of the concave circular structure, and an outer fillet on the other side.

[0020] As a preferred technical solution of the present invention, the size of the outer fillet is 0.2 to 2 mm, for example, it can be 0.2 mm, 0.5 mm, 0.75 mm, 1 mm, 1.2 mm, 1.5 mm or 2 mm, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0021] Preferably, the size ratio of the outer fillet to the inner fillet is 1:2 to 1:4, for example, it can be 1:2, 1:2.4, 1:2.8, 1:3.2, 1:3.6 or 1:4, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0022] In the present invention, by optimizing the size of the outer fillet and the size relationship between the outer fillet and the inner fillet, the wear on the fillet of the bottom plate during the grinding process is further reduced.

[0023] As a preferred technical solution of the present invention, a plurality of convex points are evenly arranged on the surface of the bottom plate.

[0024] As a preferred technical solution of the present invention, the diameter of the protrusion is 0.5 to 5 mm, for example, it can be 0.5 mm, 1.0 mm, 2 mm, 3 mm, 4 mm or 5 mm, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0025] Preferably, the height of the protrusion is 0.05-0.5 mm, for example, it can be 0.05 mm, 0.1 mm, 0.15 mm, 0.2 mm, 0.25 mm, 0.3 mm, 0.4 mm or 0.5 mm, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0026] Preferably, the distance between two connected protrusions is 1 to 3 mm, for example, 1 mm, 1.4 mm, 1.8 mm, 2.2 mm, 2.6 mm or 3 mm, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0027] Preferably, the distance between the protrusion and the edge of the bottom plate is ≤5 mm, for example, it can be 5 mm, 4 mm, 3 mm, 2 mm, 1 mm or 0.1 mm, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0028] In the present invention, by arranging convex points on the bottom plate, the pressure can be better dispersed in the entire bottom plate. At the same time, the convex points can be used as a conducting route for the gas inside the cavity, thereby further dispersing the pressure inside the cavity.

[0029] As a preferred technical solution of the present invention, the ribs are hemispherical structures.

[0030] As a preferred technical solution of the present invention, the raised end of the hemispherical structure is arranged on a side close to the bottom plate;

[0031] Preferably, the height of the hemispherical structure is 0.1-5 mm, for example, 0.1 mm, 1 mm, 2 mm, 3 mm, 4 mm or 5 mm, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0032] As a preferred technical solution of the present invention, the diameter of the bottom plate is 0.1 to 200 mm, for example, it can be 0.1 mm, 1 mm, 10 mm, 30 mm, 50 mm, 70 mm, 100 mm, 120 mm, 150 mm, 180 mm or 200 mm, but is not limited to the listed values. Other values ​​not listed within the numerical range are also applicable.

[0033] Preferably, the height of the side wall is 0.1-10 mm, for example, 0.1 mm, 1 mm, 2 mm, 4 mm, 6 mm, 8 mm or 10 mm, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0034] The numerical range described in the present invention not only includes the point values ​​listed above, but also includes any point values ​​between the above numerical ranges that are not listed. Due to space limitations and for the sake of simplicity, the present invention no longer exhaustively lists the specific point values ​​included in the range.

[0035] Compared with the prior art, the present invention has the following beneficial effects:

[0036] (1) The adsorption film provided by the present invention has a simple structure. When the adsorption film is used for 200 mm wafer grinding, it can achieve good loading and unloading effects, and can ensure that chemical mechanical grinding has a good grinding effect;

[0037] (2) The present invention optimizes the dimensions of the horizontal plate, side wall, bottom plate, inner and outer fillet, and bottom plate structure so that the grinding rate of the edge during the grinding process can be consistent with that of the center, thereby controlling the thickness uniformity of the wafer after grinding within ±0.01um. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] Figure 1 A side view of an adsorption film for chemical mechanical polishing provided in a specific embodiment of the present invention;

[0039] Figure 2 A schematic diagram of the structure of a bottom plate in an adsorption membrane for chemical mechanical polishing provided in a specific embodiment of the present invention;

[0040] Among them, 1 is the bottom plate, 2 is the side wall, 3 is the cross plate, H1 is the side wall thickness, H2 is the bottom plate thickness, R1 is the outer fillet, and R2 is the inner fillet. DETAILED DESCRIPTION

[0041] The technical solution of the present invention is further described below by specific implementation methods. It should be understood by those skilled in the art that the embodiments are only to help understand the present invention and should not be regarded as specific limitations of the present invention.

[0042] In one embodiment, the present invention provides an adsorption film for chemical mechanical polishing, such as Figure 1 As shown, the adsorption film is a concave circular structure; the concave circular structure includes a bottom plate 1 and a side wall 2;

[0043] A transverse plate 3 is fixedly arranged at the top of the side wall 2; a rib is arranged at one end of the transverse plate 3 close to the center line of the concave circular structure.

[0044] The material of the concave circular structure includes silicone.

[0045] The length of the horizontal plate 3 is 5 to 15 times the thickness of the side wall H1; the thickness of the side wall H1 is 1.5 to 3 times the thickness of the bottom plate H2;

[0046] The connection angle between the bottom plate 1 and the side wall 2 is provided with an inner fillet R2 on one side close to the center line of the concave circular structure, and an outer fillet R1 on the other side; the size of the outer fillet is 0.2 to 2 mm; the size ratio of the outer fillet R1 to the inner fillet R2 is 1:2 to 1:4;

[0047] like Figure 2 As shown, a plurality of convex points are evenly arranged on the surface of the bottom plate 1; the diameter of the convex points is 0.5-5 mm; the height of the convex points is 0.05-0.5 mm; the distance between two connected convex points is 1-3 mm; the distance between the convex points and the edge of the bottom plate 1 is ≤5 mm;

[0048] The rib is a hemispherical structure; the raised end of the hemispherical structure is arranged on a side close to the bottom plate; the height of the hemispherical structure is 0.1 to 5 mm;

[0049] The diameter of the bottom plate 1 is 0.1-200 mm; the height of the side wall 2 is 0.1-10 mm.

[0050] Example 1

[0051] This embodiment provides an adsorption film for chemical mechanical polishing, such as Figure 1 As shown, the adsorption film is a concave circular structure; the concave circular structure includes a bottom plate 1 and a side wall 2;

[0052] A transverse plate 3 is fixedly arranged at the top of the side wall 2; a rib is arranged at one end of the transverse plate 3 close to the center line of the concave circular structure.

[0053] The concave circular structure is made of silica gel.

[0054] The length of the horizontal plate 3 is 10 times the thickness H1 of the side wall; the thickness H1 of the side wall is 2 times the thickness H2 of the bottom plate;

[0055] The connection angle between the bottom plate 1 and the side wall 2 is provided with an inner fillet R2 on one side close to the center line of the concave circular structure, and an outer fillet R1 on the other side; the size of the outer fillet R1 is 0.15 mm; the size ratio of the outer fillet R1 to the inner fillet R2 is 1:3;

[0056] like Figure 2 As shown, a plurality of convex points are evenly arranged on the surface of the bottom plate 1; the diameter of the convex points is 2.5 mm; the height of the convex points is 0.25 mm; the distance between two connected convex points is 2 mm; the distance between the convex points and the edge of the bottom plate 1 is 2.5 mm;

[0057] The rib is a hemispherical structure; the raised end of the hemispherical structure is arranged on a side close to the bottom plate; the height of the hemispherical structure is 2 mm;

[0058] The diameter of the bottom plate 1 is 100 mm; the height of the side wall 2 is 5 mm.

[0059] Example 2

[0060] This embodiment provides an adsorption film for chemical mechanical polishing, such as Figure 1 As shown, the adsorption film is a concave circular structure; the concave circular structure includes a bottom plate 1 and a side wall 2;

[0061] A transverse plate 3 is fixedly arranged at the top of the side wall 2; a rib is arranged at one end of the transverse plate 3 close to the center line of the concave circular structure.

[0062] The concave circular structure is made of silica gel.

[0063] The length of the horizontal plate 3 is 5 times the thickness H1 of the side wall; the thickness H1 of the side wall is 1.5 times the thickness H2 of the bottom plate;

[0064] The connection angle between the bottom plate 1 and the side wall 2 is provided with an inner fillet R2 on one side close to the center line of the concave circular structure, and an outer fillet R1 on the other side; the size of the outer fillet is 0.2 mm; the size ratio of the outer fillet R1 to the inner fillet R2 is 1:4;

[0065] like Figure 2 As shown, a plurality of convex points are evenly arranged on the surface of the bottom plate 1; the diameter of the convex points is 0.5 mm; the height of the convex points is 0.05 mm; the distance between two connected convex points is 1 mm; the distance between the convex points and the edge of the bottom plate 1 is 3.6 mm;

[0066] The rib is a hemispherical structure; the raised end of the hemispherical structure is arranged on a side close to the bottom plate; the height of the hemispherical structure is 0.1 mm;

[0067] The diameter of the bottom plate 1 is 10 mm; the height of the side wall 2 is 3 mm.

[0068] Example 3

[0069] This embodiment provides an adsorption film for chemical mechanical polishing, such as Figure 1 As shown, the adsorption film is a concave circular structure; the concave circular structure includes a bottom plate 1 and a side wall 2;

[0070] A transverse plate 3 is fixedly arranged at the top of the side wall 2; a rib is arranged at one end of the transverse plate 3 close to the center line of the concave circular structure.

[0071] The concave circular structure is made of silica gel.

[0072] The length of the horizontal plate 3 is 15 times the thickness of the side wall H1; the thickness of the side wall H1 is 3 times the thickness of the bottom plate H2;

[0073] The connection angle between the bottom plate 1 and the side wall 2 is provided with an inner fillet R2 on one side close to the center line of the concave circular structure, and an outer fillet R1 on the other side; the size of the outer fillet is 2 mm; the size ratio of the outer fillet R1 to the inner fillet R2 is 1:2;

[0074] like Figure 2 As shown, a plurality of convex points are evenly arranged on the surface of the bottom plate 1; the diameter of the convex points is 5 mm; the height of the convex points is 0.5 mm; the distance between two connected convex points is 3 mm; the distance between the convex points and the edge of the bottom plate 1 is 5 mm;

[0075] The rib is a hemispherical structure; the raised end of the hemispherical structure is arranged on a side close to the bottom plate; the height of the hemispherical structure is 2.5 mm;

[0076] The diameter of the bottom plate 1 is 180 mm; the height of the side wall 2 is 10 mm.

[0077] Example 4

[0078] This embodiment provides an adsorption film for chemical mechanical polishing. The adsorption film is different from that in Embodiment 1 only in that:

[0079] In this embodiment, the length of the transverse plate 3 is adjusted to be three times the thickness H1 of the side wall.

[0080] Example 5

[0081] This embodiment provides an adsorption film for chemical mechanical polishing. The adsorption film is different from that in Embodiment 1 only in that:

[0082] In this embodiment, the length of the transverse plate 3 is adjusted to 20 times the thickness H1 of the side wall.

[0083] Example 6

[0084] This embodiment provides an adsorption film for chemical mechanical polishing. The adsorption film is different from that in Embodiment 1 only in that:

[0085] In this embodiment, the side wall thickness H1 is adjusted to 1 times the bottom plate thickness H2.

[0086] Example 7

[0087] This embodiment provides an adsorption film for chemical mechanical polishing. The adsorption film is different from that in Embodiment 1 only in that:

[0088] In this embodiment, the side wall thickness H1 is adjusted to 5 times the bottom plate thickness H2.

[0089] Example 8

[0090] This embodiment provides an adsorption film for chemical mechanical polishing. The adsorption film is different from that in Embodiment 1 only in that:

[0091] In this embodiment, the size of the outer fillet is adjusted to 2.5 mm; and the size ratio of the outer fillet R1 to the inner fillet R2 is adjusted to 1:5.

[0092] Example 9

[0093] This embodiment provides an adsorption film for chemical mechanical polishing. The adsorption film is different from that in Embodiment 1 only in that:

[0094] In this embodiment, the size of the outer fillet is adjusted to 0.1 mm; and the size ratio of the outer fillet R1 to the inner fillet R2 is adjusted to 1:1.

[0095] Example 10

[0096] This embodiment provides an adsorption film for chemical mechanical polishing. The adsorption film is different from that in Embodiment 1 only in that:

[0097] In this embodiment, the distance between adjacent protrusions is adjusted to 5 mm.

[0098] Embodiment 11

[0099] This embodiment provides an adsorption film for chemical mechanical polishing. The adsorption film is different from that in Embodiment 1 only in that:

[0100] In this embodiment, the protrusions disposed on the surface of the bottom plate are omitted.

[0101] Comparative Example 1

[0102] This comparative example provides an adsorption film for chemical mechanical polishing, and the adsorption film is the adsorption film for mechanical chemical polishing provided in Example 1 of patent CN214418504U.

[0103] Comparative Example 2

[0104] This comparative example provides an adsorption film for chemical mechanical polishing, and the difference between the adsorption film and Example 1 is only that:

[0105] This comparative example omits the ribs provided at one end of the transverse plate close to the center line of the concave circular structure.

[0106] When the adsorption films provided in the above embodiments and comparative examples are used for grinding 200 mm wafers, Figure 1 As shown, the adsorption film is installed on the polishing head and matched with the wafer to start grinding. The roughness extreme difference and thickness uniformity results of the wafer after grinding are shown in Table 1.

[0107] Table 1

[0108] Roughness extreme / μm Thickness uniformity / um Example 1 0.003 0.004 Example 2 0.004 0.005 Example 3 0.005 0.004 Example 4 0.01 0.008 Example 5 / / Example 6 0.009 0.007 Example 7 0.005 0.012 Example 8 0.007 0.009 Example 9 0.009 0.010 Example 10 0.009 0.008 Embodiment 11 0.018 0.012 Comparative Example 1 0.025 0.017 Comparative Example 2 0.007 0.013

[0109] According to the data in Table 1, we can know the following points:

[0110] (1) Comprehensive analysis of Examples 1-3 shows that the use of the adsorption film provided by the present invention to grind the wafer can further improve the thickness uniformity of the processed wafer;

[0111] (2) Comprehensive analysis of Example 1 and Examples 4-7 shows that the dimensional relationship between the length of the horizontal plate, the thickness of the side wall, and the thickness of the bottom plate will affect the grinding effect;

[0112] When the length of the horizontal plate is too short, the edge pressure of the wafer will be lower than the center pressure during the grinding process, which will lead to poor thickness uniformity of the wafer after grinding and fail to meet the process requirements;

[0113] When the length of the horizontal plate is too long, the polishing head cannot be installed in the adsorption film, and thus the chemical mechanical polishing process cannot be performed normally;

[0114] When the thickness of the sidewall is too thick or too thin, it will cause the loss of lateral pressure during the grinding process, which will lead to poor thickness uniformity of the wafer after grinding and fail to meet the process requirements;

[0115] (3) Comprehensive analysis of Example 1 and Examples 8-9 shows that the size relationship between the outer fillet and the inner fillet will affect the life of the adsorption film;

[0116] When the outer fillet is too large or too small, it will cause greater wear and tear on the bottom plate during the grinding process, thereby affecting the service life of the adsorption film;

[0117] (4) Comprehensive analysis of Example 1 and Examples 10-11 shows that increasing the spacing between adjacent bumps or omitting bumps will cause uneven pressure distribution, which in turn leads to poor thickness uniformity of the wafer after grinding and cannot meet the process requirements;

[0118] (5) Comprehensive analysis of Example 1 and Comparative Example 1 shows that the adsorption film provided in Comparative Example 1 has a complex structure, which is not conducive to installation, and the thickness uniformity of the wafer after grinding is significantly inferior to that of Example 1;

[0119] (6) Comprehensive analysis of Example 1 and Comparative Example 2 shows that omitting the ribs will cause the wafer to shake easily during the wafer holding process, thereby affecting the grinding effect.

[0120] In summary, the present invention, through the design of the adsorption film, can achieve good loading and unloading effects when using the adsorption film for 200mm wafer grinding, has a good holding effect on the wafer, further increases the pressure conduction of the adsorption film to the wafer, thereby ensuring that chemical mechanical grinding has a good grinding effect, so that the wafer has excellent thickness uniformity after grinding.

[0121] The applicant declares that the above is only a specific implementation mode of the present invention, but the protection scope of the present invention is not limited thereto. Those skilled in the art should understand that any changes or substitutions that can be easily thought of by those skilled in the art within the technical scope disclosed by the present invention shall fall within the protection scope and disclosure scope of the present invention.

Claims

1. An adsorption film for chemical mechanical polishing, characterized in that: The adsorption film is a concave circular structure; The concave circular structure includes a bottom plate and a side wall; A transverse plate is fixedly arranged at the top end of the side wall; a rib is arranged at one end of the transverse plate close to the center line of the concave circular structure.

2. The adsorption film for chemical mechanical polishing according to claim 1, characterized in that: The material of the concave circular structure includes silicone.

3. The adsorption film for chemical mechanical polishing according to claim 1 or 2, characterized in that: The length of the horizontal plate is 5 to 15 times the thickness of the side wall; Preferably, the side wall thickness is 1.5 to 3 times the thickness of the bottom plate.

4. The adsorption film for chemical mechanical polishing according to any one of claims 1 to 3, characterized in that: The connection angle between the bottom plate and the side wall is provided with an inner fillet on one side close to the center line of the concave circular structure, and an outer fillet on the other side.

5. The adsorption film for chemical mechanical polishing according to claim 4, characterized in that: The size of the outer fillet is 0.2 to 2 mm; Preferably, the size ratio of the outer fillet to the inner fillet is 1:2 to 1:

4.

6. The adsorption film for chemical mechanical polishing according to any one of claims 1 to 5, characterized in that: A plurality of convex points are evenly arranged on the surface of the bottom plate.

7. The adsorption film for chemical mechanical polishing according to claim 6, characterized in that: The diameter of the protrusion is 0.5 to 5 mm; Preferably, the height of the protrusion is 0.05 to 0.5 mm; Preferably, the distance between two connected protrusions is 1 to 3 mm; Preferably, the distance between the protrusion and the edge of the bottom plate is ≤5 mm.

8. The adsorption film for chemical mechanical polishing according to any one of claims 1 to 7, characterized in that: The ribs are hemispherical structures.

9. The adsorption film for chemical mechanical polishing according to claim 8, characterized in that: The raised end of the hemispherical structure is arranged on a side close to the bottom plate; Preferably, the height of the hemispherical structure is 0.1-5 mm.

10. The adsorption film for chemical mechanical polishing according to any one of claims 1 to 9, characterized in that: The diameter of the bottom plate is 0.1 to 200 mm; Preferably, the height of the side wall is 0.1-10 mm.

Citation Information

Patent Citations

  • Chemical mechanical polishing device, polishing method and system for wafer

    CN101879700A

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    CN110394727A

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  • Elastic film, bearing head, chemical mechanical polishing system and chemical mechanical polishing method

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