Semiconductor substrate processing equipment

Abstract

The invention relates to the technical field of semiconductor wafer processing, and discloses semiconductor substrate processing equipment which comprises an equipment body, a limiting guide groove is formed in the lower position in the equipment body, a tool base is movably arranged in the limiting guide groove, and a plurality of trays are evenly distributed in the tool base. Semiconductor wafers are placed in each group of trays, and vacuum deposition pipes are correspondingly arranged in the equipment main body and above the trays. According to the semiconductor substrate processing equipment, the servo motor is started, one group of vacuum deposition pipes are driven to rotate at a constant speed through a series of transmissions, and each group of vacuum deposition pipes synchronously rotate through the connection effect of the synchronous chain wheels, so that on one hand, the vacuum deposition pipes are heated more uniformly, and on the other hand, the vacuum deposition pipes are heated more uniformly; and on the other hand, the solid particles cannot be attached and are uniformly dispersed under the movement action of the pipe wall in the sinking process, so that the deposition uniformity is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor wafer processing, and in particular to a semiconductor substrate processing device. Background Art

[0002] In the manufacturing process of semiconductor devices, a variety of deposition techniques are usually used to deposit multiple layers of materials on a semiconductor substrate. For example, a material layer is deposited on a semiconductor substrate by chemical vapor deposition (CVD). Chemical vapor deposition is a new technology for preparing inorganic materials developed in recent decades. The basic principle is to introduce a gaseous reactant (or a vapor of a liquid reactant) containing thin film elements into a reaction chamber, and then heat it at a high temperature in the reaction chamber to cause a chemical reaction (or use ionization technology) to generate the desired solid film and deposit it on the surface of the semiconductor wafer. For example, silane (SiH 4 ) and ammonia (NH 3 ) as a precursor gas, reacts at high temperature (600-900℃) to form a silicon nitride film, which is coated on the surface of the semiconductor wafer.

[0003] There are many technical problems in the existing semiconductor wafer plating process. First, the sealing effect of the feed port of the equipment is poor, and air is easily introduced, causing serious interference with the reaction process; second, the gas distribution and heating in the reaction pipeline are uneven, resulting in a low reaction rate, and the sediment is also easy to adhere to the tube wall during the descent process, resulting in uneven uniformity of the deposited film, reducing the plating quality; third, the exhaust gas generated in the reaction tube is difficult to be discharged to the outside in time due to the internal and external pressure difference, causing accumulation in the tube, interfering with the normal progress of the reaction, and easily introducing air in the process of exhausting to the outside, destroying the reaction environment.

[0004] To sum up, considering that the existing facilities cannot meet the work requirements, we propose a semiconductor substrate processing equipment. Summary of the invention

[0005] The main purpose of the present invention is to provide a semiconductor substrate processing device, which can effectively solve the problems in the background technology.

[0006] To achieve the above object, the technical solution adopted by the present invention is: A semiconductor substrate processing device comprises an equipment body, wherein a limiting guide groove is provided at a lower position inside the equipment body, a tooling seat is movably arranged in the limiting guide groove, a plurality of groups of trays are evenly distributed inside the tooling seat, semiconductor wafers are placed in each group of trays, a hydraulic telescopic rod is horizontally welded at a middle position of the rear end of the tooling seat, the hydraulic telescopic rod extends outward from the inside of a hydraulic cylinder, the hydraulic cylinder is mounted on a tail stock, and the tail stock is riveted at a middle position of the rear end surface of the equipment body.

[0007] As a preferred solution of the semiconductor substrate processing equipment described in the present invention, an inlet and outlet are provided at the position where the front end surface of the equipment body is connected to the limiting guide groove, grooves are symmetrically provided on both sides of the inlet and outlet, and a compressed air structure is installed in each group of grooves, and the number of the compressed air structures is 2 groups.

[0008] As a preferred solution of the semiconductor substrate processing equipment described in the present invention, a sealing plate is provided at the front end of the tooling seat, and curved pressure heads are symmetrically welded at both ends of the sealing plate.

[0009] As a preferred solution of the semiconductor substrate processing equipment described in the present invention, a vacuum deposition tube is correspondingly arranged inside the equipment body and above the tray, the number of the vacuum deposition tubes and the trays are preferably 4-8 groups, the upper end of the vacuum deposition tube is connected to the lower end surface of the mixing barrel through a sealing bearing, a heating section is arranged in the middle of the vacuum deposition tube, a heater is installed on the outside of the heating section, and the outer side surface of the heater is fixed to the inner wall of the equipment body.

[0010] As a preferred solution of the semiconductor substrate processing equipment described in the present invention, a mixing cylinder is fixed at the middle position of the upper end surface of the equipment body, a mixing chamber is opened inside the mixing cylinder, an air flow channel corresponding to the upper end of each group of vacuum deposition tubes is opened at the bottom of the mixing chamber, and a first air inlet pipe and a second air inlet pipe are respectively arranged on both sides of the mixing cylinder, and the first air inlet pipe and the second air inlet pipe are both connected to the interior of the mixing chamber.

[0011] As a preferred scheme of the semiconductor substrate processing equipment described in the present invention, the compressed air structure comprises an air cylinder, a mounting sleeve, an air storage cavity, a limiting port, a movable rod, an arc slider, an air plug seat, a reset spring and an exhaust hole, the air cylinder is horizontally fixed in the inner layer of the equipment body by the mounting sleeve, an air storage cavity is provided inside the air cylinder, a limiting port is provided at the middle position of one end face of the air cylinder, a movable rod is movably provided inside the air storage cavity through the limiting port, an arc slider is provided at one end of the movable rod extending out of the limiting port, the arc slider and the corresponding curved pressure head act on each other, an air plug seat is fixed at one end of the movable rod away from the arc slider, the air plug seat and the cavity wall of the air storage cavity are fully fitted, a reset spring sleeved on the outside of the movable rod is fixed between the air plug seat and the limiting port, and an exhaust hole connected to the air storage cavity is provided at the middle position of one end of the air cylinder away from the limiting port.

[0012] As a preferred solution of the semiconductor substrate processing equipment described in the present invention, wherein: an air duct is connected to the exhaust hole, a connecting strip is installed around the inner wall of the inlet and outlet, a sealing airbag is glued to the outside of the connecting strip, and a clamping groove for accommodating the sealing airbag is opened on the inner wall of the inlet and outlet. After the sealing airbag is inflated, it extends out of the clamping groove and acts on the outer surface of the sealing plate. The two groups of air ducts extend outward and are fixed to the connecting strip, and the connection between the two is connected to the interior of the sealing airbag.

[0013] As a preferred solution of a semiconductor substrate processing equipment described in the present invention, wherein: a limit seat is provided at the upper end of the mixing cylinder, the upper end of the limit seat is connected to a driving shell, a crank is rotatably provided at the middle position inside the driving shell, the middle part of the crank is splined with a rotating shaft, the rotating shaft and the uniform speed motor are connected through a coupling, the uniform speed motor is arranged through the driving shell, the end of the crank and the upper end of the connecting rod are hinged, the lower end of the connecting rod is connected to a circular exhaust seat, the middle position of the upper end surface of the circular exhaust seat is provided with a rod groove for the connecting rod to swing, the circular exhaust seat is arranged close to the wall in the mixing chamber, and a plurality of groups of poking columns are evenly distributed on the lower end surface of the circular exhaust seat.

[0014] As a preferred solution of the semiconductor substrate processing equipment described in the present invention, a curved rolling panel is installed in the upper end tube of the vacuum deposition tube, a blocking air port is opened in the middle position of the curved rolling panel, a blocking ball is movably arranged on the blocking air port, and the poking column passes through the air flow channel and extends into the vacuum deposition tube during the downward movement, acting on the corresponding blocking ball.

[0015] As a preferred solution of the semiconductor substrate processing equipment described in the present invention, wherein: a synchronous sprocket is sleeved on each group of the vacuum deposition tubes and located below the heater, and several groups of the synchronous sprockets are uniformly connected and driven by an external chain, and one group of the vacuum deposition tubes is also sleeved on a large gear, and a small gear is meshed with one side of the large gear, and the small gear is sleeved on the output shaft of the servo motor, and the servo motor is fixedly arranged inside the main body of the equipment.

[0016] As a preferred solution of the semiconductor substrate processing equipment described in the present invention, wherein: a tube seat is fixed at the middle position of the lower end face of the mixing cylinder, an annular gas collecting pipe is installed at the lower end of the tube seat, and a plurality of groups of sealed gas collecting hoods are evenly distributed around the outer tube surface of the annular gas collecting pipe, and a moving track is opened in the middle position of the end face of each group of the sealed gas collecting hoods, and a perforated partition plate connected to the inside of the annular gas collecting pipe is installed inside the sealed gas collecting hood, and a sliding rod is horizontally installed extending outward from the middle of the perforated partition plate, and a rotating exhaust structure that acts on the sealed gas collecting hood is installed on the upper outer side of each group of the vacuum deposition tubes, and the rotating exhaust structure moves in the moving track, and the number of the sealed gas collecting hoods and the rotating exhaust structure is preferably 4-8 groups.

[0017] As a preferred solution of a semiconductor substrate processing equipment described in the present invention, the rotary exhaust structure includes a bracket, a curved sealing port, a convex sealer, a spring slot, a connecting inner groove and a sliding rod outer groove, the bracket is fixed on the outer side surface of the vacuum deposition tube, a curved sealing port is penetrated through the middle part of the bracket, a convex sealer is installed on the curved sealing port, spring slots are symmetrically provided on both sides of the curved sealing port on the bracket, a connecting inner groove is provided on the bracket and located at the upper and lower ends of the curved sealing port, the connecting inner groove is connected to the interior of the vacuum deposition tube, and a sliding rod outer groove for the movement of the sliding rod is provided on the outer end surface of the bracket.

[0018] As a preferred solution of a semiconductor substrate processing equipment described in the present invention, the convex sealer includes a sealing plate, a connecting piece, a connecting spring and an arc convex surface, the sealing plate is sealed at the curved sealing opening to form a seal, connecting pieces are arranged on both sides of the sealing plate, connecting springs extending into spring slots are fixed on the connecting pieces, the number of spring slots and connecting springs are preferably 4 groups, and an arc convex surface is arranged on the middle outer surface of the sealing plate, and the arc convex surface acts on the sliding rod.

[0019] As a preferred solution of the semiconductor substrate processing equipment described in the present invention, part of the annular gas collecting pipe is extended outside the equipment body and is connected to a suction pipe, a vacuum pump is installed in the middle of the suction pipe, a spiral coil is arranged on the outer side of the mixing barrel, the upper end of the suction pipe is connected to the spiral coil, and an insulation layer is arranged around the outer side of the spiral coil.

[0020] As a preferred solution of the semiconductor substrate processing equipment described in the present invention, the upper end of the spiral coil is connected to a second exhaust pipe.

[0021] As a preferred solution of the semiconductor substrate processing equipment described in the present invention, the upper end surface of the equipment body is extended outwardly and connected to a first exhaust pipe.

[0022] As a preferred solution of the semiconductor substrate processing equipment described in the present invention, a vacuum pump acting on the inside of the equipment body is installed on the upper end surface of the equipment body.

[0023] As a preferred solution of the semiconductor substrate processing equipment described in the present invention, the lower end of the first air inlet pipe is connected to a first gas storage tank, the lower end of the second air inlet pipe is connected to a second gas storage tank, and the first gas storage tank and the second gas storage tank are respectively located at the left and right ends of the equipment body.

[0024] As a preferred solution of the semiconductor substrate processing equipment described in the present invention, the heater is provided with rotation grooves for the vacuum deposition tubes to pass through.

[0025] As a preferred solution of the semiconductor substrate processing equipment described in the present invention, a sealing ring is arranged around the outer side surface of the circular exhaust seat.

[0026] As a preferred solution of the semiconductor substrate processing equipment described in the present invention, wherein: legs are symmetrically welded on the lower end of the equipment body, and the number of the legs is preferably 2-4 groups.

[0027] As a preferred solution of the semiconductor substrate processing equipment described in the present invention, the connecting rod moves in the driving housing.

[0028] The present invention provides a semiconductor substrate processing device through improvement, which has the following significant improvements and advantages compared with the prior art: During the return process, the curved pressure head contacts the arc slider respectively, generating a squeezing force on the movable rod, so that the movable rod drives the air plug seat to move linearly, squeezing the gas in the air storage cavity. The gas enters the air guide tube through the exhaust hole, inflating the sealing airbag, causing it to expand slowly. The sealing airbag and the sealing plate are tightly fitted around one side, thereby strengthening the seal and achieving the effect of automatic sealing.

[0029] When the circular exhaust seat moves to a position close to the bottom of the mixing chamber, several groups of poking posts extend through the air flow channel into the corresponding vacuum deposition tube, squeezing out the blocking balls at the blocked gas ports, so that the mixed gas in the mixing chamber is evenly and synchronously injected into the vacuum deposition tube from several groups of blocked gas ports, achieving the effect of uniform gas distribution. Then the connecting rod drives the circular exhaust seat back to its position, and the blocking ball rolls back to the upper end of the blocked gas port under the condition that the poking posts leave, thereby achieving automatic sealing and preventing gas reflux.

[0030] The servo motor is started, and one group of vacuum deposition tubes is driven to rotate at a uniform speed through a series of transmissions. Each group of vacuum deposition tubes is rotated synchronously through the connection between the synchronous sprocket and the synchronous sprocket. On the one hand, the vacuum deposition tubes are heated more evenly and the reaction rate is increased. On the other hand, the solid particles are affected by the movement of the tube wall during the sinking process and cannot adhere to it, so they are evenly dispersed and the uniformity of deposition is improved.

[0031] Start the vacuum pump, which acts on the suction pipe and the annular gas collecting pipe in turn, so that suction is generated at the sealed gas collecting hood position, and part of the high-temperature exhaust gas in the vacuum deposition tube is promptly sucked into the sealed gas collecting hood through the curved sealing port. On the one hand, it solves the problem that the exhaust gas in the tube cannot be discharged in time. On the other hand, the high-temperature exhaust gas is injected into the spiral coil and flows slowly along the spiral coil, transferring its own heat to the mixing barrel, preheating the two reaction gases in the mixing chamber and improving the mixing efficiency of the two, which is energy-saving and environmentally friendly. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 It is a schematic diagram of the overall structure of a semiconductor substrate processing device of the present invention; Figure 2 is a cross-sectional view of the main body of the device of the present invention; Figure 3 It is a schematic diagram of the external connection of the air compression structure of the present invention; Figure 4 is a cross-sectional view of the air compression structure of the present invention; Figure 5 Schematic diagram of external connection of the mixing cylinder of the present invention; Figure 6 Schematic diagram of the external structure of the vacuum deposition tube of the present invention; Figure 7 It is a schematic diagram of the transmission structure of the circular exhaust seat of the present invention; Figure 8 It is a schematic diagram of the bottom structure of the circular exhaust seat of the present invention; Fig. 9 It is a schematic diagram of the structure of the upper end portion of the vacuum deposition tube of the present invention; Fig.10 is a cross-sectional view of the thermal insulation layer in the second embodiment of the present invention; Fig.11 Schematic diagram of the external structure of the annular gas collecting pipe in the second embodiment of the present invention; Fig.12 It is a schematic diagram of the specific structure of the rotary exhaust structure of the present invention; Fig.13 It is a schematic diagram of the specific structure of the convex sealer of the present invention.

[0033] In the figure: 1. Equipment body; 2. Limit guide groove; 3. Fixture seat; 4. Hydraulic telescopic rod; 5. Hydraulic cylinder; 6. Tail seat; 8. Compressed air structure; 81. Air cylinder; 82. Mounting sleeve; 83. Air storage chamber; 84. Limit opening; 85. Movable rod; 86. Arc slider; 87. Air plug seat; 88. Reset spring; 89. Exhaust hole; 9. Rotary exhaust structure; 91. Bracket; 92. Curved sealing opening; 93. Convex Surface sealer; 931, sealing plate; 932, connecting piece; 933, connecting spring; 934, arc convex surface; 94, spring slot; 95, connecting inner slot; 96, sliding rod outer slot; 10, tray; 11, semiconductor wafer; 12, sealing plate; 13, curved pressure head; 14, groove; 15, inlet and outlet; 20, air guide tube; 21, connecting strip; 22, sealing airbag; 30, mixing cylinder; 31, limit seat; 3 2. Drive housing; 33. Crank; 34. Servo motor; 35. Rotating shaft; 36. Connecting rod; 37. Circular exhaust seat; 38. Rod groove; 39. Poke column; 40. Vacuum deposition tube; 41. Sealed bearing; 42. Curved roller panel; 43. Blocking air port; 44. Blocking ball; 45. Heating section; 46. Heater; 47. Rotating groove; 50. Synchronous sprocket; 51. Outer chain; 52. Large gear; 53. Small gear ; 54. Uniform speed motor; 60. Pipe seat; 61. Annular gas collecting pipe; 62. Sealed gas collecting hood; 63. Moving track; 64. Perforated partition; 65. Sliding rod; 66. Suction pipe; 67. Suction pump; 68. Spiral coil; 69. Insulation layer; 70. Vacuum pump; 71. First gas storage tank; 72. First air inlet pipe; 73. Second gas storage tank; 74. Second air inlet pipe; 75. First exhaust pipe; 76. Sealing ring. DETAILED DESCRIPTION

[0034] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention. Embodiment 1

[0035] like Figure 1-9 As shown, this embodiment provides a semiconductor substrate processing equipment, including an equipment body 1, the lower end of the equipment body 1 is symmetrically welded with legs, the legs play a supporting role, a limiting guide groove 2 is provided at the lower position inside the equipment body 1, a tooling seat 3 is movably arranged in the limiting guide groove 2, the limiting guide groove 2 plays a limiting guiding role, a plurality of groups of trays 10 are evenly distributed inside the tooling seat 3, each group of trays 10 is placed with a semiconductor wafer 11, and the sizes of the two are adapted to each other.

[0036] Among them, a hydraulic telescopic rod 4 is horizontally welded at the middle position of the rear end of the tooling seat 3, and the hydraulic telescopic rod 4 extends outward from the inside of the hydraulic cylinder 5. The hydraulic cylinder 5 is installed on the tailstock 6, and the tailstock 6 is riveted at the middle position of the rear end surface of the equipment body 1. Figure 2 shown.

[0037] Among them, the front end of the tooling seat 3 is provided with a sealing plate 12, and the two ends of the sealing plate 12 are symmetrically welded with curved pressure heads 13, and the surface of the curved pressure head 13 is smooth. Figure 1 shown.

[0038] Furthermore, an inlet and outlet 15 is provided at the position where the front end surface of the device body 1 and the limiting guide groove 2 are connected, and grooves 14 are symmetrically provided on both sides of the inlet and outlet 15, and a compressed air structure 8 is installed in each group of grooves 14. Figure 1 and 3 shown.

[0039] Specifically, the compressed air structure 8 includes an air cylinder 81, a mounting sleeve 82, an air storage cavity 83, a limit opening 84, a movable rod 85, an arc slider 86, an air plug seat 87, a return spring 88 and an exhaust hole 89. Figure 4 shown.

[0040] In this embodiment, the air cylinder 81 is horizontally fixed in the inner layer of the equipment body 1 through the installation sleeve 82, and an air storage chamber 83 is opened inside the air cylinder 81. A limiting opening 84 is opened in the middle position of one end surface of the air cylinder 81. A movable rod 85 is movably arranged inside the air storage chamber 83 through the limiting opening 84. An arc slider 86 is arranged at one end of the movable rod 85 extending out of the limiting opening 84, and the arc slider 86 interacts with the corresponding curved pressure head 13.

[0041] In this embodiment, an air plug seat 87 is fixed to the end of the movable rod 85 away from the arc slider 86. The air plug seat 87 and the wall of the air storage chamber 83 are fully fitted to form a sliding seal. A return spring 88 is fixed between the air plug seat 87 and the limit opening 84 and is sleeved on the outside of the movable rod 85. The return spring 88 is compressed to generate an elastic force to drive the movable rod 85 to return to its original position. An exhaust hole 89 connected to the air storage chamber 83 is provided at the middle position of the end of the air cylinder 81 away from the limit opening 84.

[0042] Furthermore, the exhaust hole 89 is connected to an air guide pipe 20, such as Figure 3 and 4 shown.

[0043] Furthermore, a connecting strip 21 is installed around the inner wall of the inlet and outlet 15, and a sealing airbag 22 is glued to the outside of the connecting strip 21. A clamping groove for accommodating the sealing airbag 22 is opened on the inner wall of the inlet and outlet 15. After the sealing airbag 22 is inflated, it extends out of the clamping groove and acts on the outer surface of the sealing plate 12. Under natural conditions, the sealing airbag 22 is in an inflated state in the clamping groove, such as Figure 3 shown.

[0044] The two groups of air guide tubes 20 are both extended outward and fixed to the connecting strip 21, and the connection between the two is connected to the interior of the sealing airbag 22. Figure 3 shown.

[0045] Furthermore, a vacuum deposition tube 40 is disposed inside the device body 1 and above the tray 10. The upper end of the vacuum deposition tube 40 is connected to the lower end surface of the mixing barrel 30 through a sealing bearing 41. An oil seal structure is disposed inside the sealing bearing 41. Figure 2 and 6 shown.

[0046] A heating section 45 is provided in the middle of the vacuum deposition tube 40, and a heater 46 is installed on the outside of the heating section 45 (the specific structure of the heater 46 can be designed according to actual conditions), the outer side of the heater 46 is fixed to the inner wall of the device body 1, and a rotation groove 47 is provided inside the heater 46 for the vacuum deposition tube 40 to pass through, and the rotation groove 47 plays a limiting role, such as Figure 6 and 9 shown.

[0047] A curved rolling plate 42 (hollow hemispherical structure) is installed in the upper end of the vacuum deposition tube 40. A blocking air port 43 is provided in the middle of the curved rolling plate 42. A blocking ball 44 is movably provided on the blocking air port 43. The shapes of the two are adapted. To ensure full sealing, the blocking ball 44 has a certain weight. Fig. 9 shown.

[0048] A synchronous sprocket 50 is sleeved on each set of vacuum deposition tubes 40 and located below the heater 46. Several sets of synchronous sprockets 50 are connected and driven by an external chain 51. Figure 6 shown.

[0049] Furthermore, a large gear 52 is sleeved on one of the vacuum deposition tubes 40, and a small gear 53 is meshed with the large gear 52 on one side, and the small gear 53 is sleeved on the output shaft of the uniform speed motor 54, and the uniform speed motor 54 is fixedly arranged inside the device body 1, such as Figure 5 shown.

[0050] Furthermore, a mixing cylinder 30 is fixed at the middle position of the upper end surface of the device body 1, and a mixing chamber is provided inside the mixing cylinder 30. The bottom of the mixing chamber is provided with an air flow channel corresponding to the upper end of each group of vacuum deposition tubes 40, such as Figure 5 shown.

[0051] Furthermore, a limiting seat 31 is provided at the upper end of the mixing cylinder 30, and a driving housing 32 is connected to the upper end of the limiting seat 31. A crank 33 is rotatably provided at the middle position of the driving housing 32. Figure 5 and 7 shown.

[0052] Specifically, the middle part of the crank 33 is spline-connected with a rotating shaft 35, and the rotating shaft 35 and the servo motor 34 are connected through a coupling. The servo motor 34 is arranged through the drive housing 32, and the end of the crank 33 is hinged with the upper end of the connecting rod 36. The connecting rod 36 moves in the drive housing 32, and the lower end of the connecting rod 36 is connected with a circular exhaust seat 37. The middle position of the upper end surface of the circular exhaust seat 37 is provided with a rod groove 38 for the connecting rod 36 to swing. The circular exhaust seat 37 is arranged in the mixing chamber against the wall, and a sealing ring 76 is arranged around the outer side surface of the circular exhaust seat 37. A plurality of groups of poking posts 39 are evenly distributed on the lower end surface of the circular exhaust seat 37, and the lower end of the poking post 39 is set as a slider, such as Figure 7 and 8 shown.

[0053] Among them, the poking column 39 passes through the air flow channel and extends into the vacuum deposition tube 40 during the downward movement (the cross-sectional area of ​​the poking column 39 is smaller than the air flow channel), and acts on the corresponding blocking ball 44. The poking column 39 corresponds to the eccentric position of the blocking ball 44, pushing the blocking ball 44 to leave the center position and move slightly outward.

[0054] Furthermore, a first air inlet pipe 72 and a second air inlet pipe 74 are respectively provided on both sides of the mixing cylinder 30, and a control valve is installed in the first air inlet pipe 72 and the second air inlet pipe 74. The first air inlet pipe 72 and the second air inlet pipe 74 are both connected to the interior of the mixing chamber. Figure 1 shown.

[0055] The lower end of the first air inlet pipe 72 is connected to the first air storage tank 71, and the lower end of the second air inlet pipe 74 is connected to the second air storage tank 73. The first air storage tank 71 and the second air storage tank 73 are respectively located at the left and right ends of the device body 1. Figure 1 shown.

[0056] Furthermore, the upper end surface of the device body 1 is connected to a first exhaust pipe 75 extending outwardly, and the first exhaust pipe 75 is connected to the interior of the device body 1, such as Figure 2 shown.

[0057] Furthermore, a vacuum pump 70 is installed on the upper end surface of the device body 1 to act on the inside of the device body 1. Figure 1 shown.

[0058] When the present embodiment is in use, the semiconductor wafers 11 to be deposited with a thin film layer are first placed on each tray 10 in turn, and then the hydraulic cylinder 5 is started, the hydraulic telescopic rod 4 is retracted, and the tooling seat 3 is driven to return to the interior of the equipment body 1 along the limiting guide groove 2, so that the semiconductor wafers 11 are respectively located directly below the vacuum deposition tube 40. During the return process, the curved pressure heads 13 at both ends of the sealing plate 12 are respectively in contact with the arc slider 86 of the air compression structure 8, and an extrusion force is generated on the movable rod 85, so that the movable rod 85 drives the gas plug seat 87 to move linearly (the return spring 88 is compressed), and the gas in the gas storage cavity 83 is squeezed. The gas enters the air guide tube 20 through the exhaust hole 89, and the two groups of air guide tubes 20 are used to inflate the sealing airbag 22, so that it slowly expands, extends out of the clamping groove, and contacts the outer surface of the sealing plate 12 (at this time, the sealing plate 12 is located in the inlet and outlet 15). The sealing airbag 22 and the sealing plate 12 are tightly fitted around one side, thereby strengthening the seal.

[0059] Then, the vacuum pump 70 is started to extract the air inside the equipment body 1 to create a vacuum environment, and the reaction gases in the first gas storage tank 71 and the second gas storage tank 73 are respectively introduced into the mixing chamber of the mixing barrel 30 through the air inlet pipe, and mixed in the mixing chamber. Then, the servo motor 34 is started to drive the crank 33 to make a circular motion. When the crank 33 makes a circular motion, it causes the movement of the connecting rod 36. The connecting rod 36 drives the circular exhaust seat 37 to move downward in the mixing chamber first, and squeezes the two reaction gases in the mixing chamber. When the circular exhaust seat 37 moves to a position close to the bottom of the mixing chamber, several groups of poking columns 39 extend into the corresponding vacuum deposition tube 40 through the air flow channel during the downward movement, squeezing out the blocked gas. The plugging ball 44 is located at the position of the port 43, so that the mixed gas in the mixing chamber is uniformly and synchronously injected into the heating section 45 of the vacuum deposition tube 40 from several groups of blocked gas ports 43, and then the connecting rod 36 drives the circular exhaust seat 37 to return upward. Under the condition that the poking column 39 leaves, the plugging ball 44 rolls back to the upper end of the blocked gas port 43 to achieve blocking. The high-temperature heating of the heater 46 causes the mixed gas in the heating section 45 to undergo a chemical reaction to generate solid particles and waste gas. The solid particles settle due to their own gravity and sink in the vacuum deposition tube 40, and are finally deposited on the corresponding semiconductor wafer 11, and are continuously plated to form a tight film. After the waste gas is generated, it rises due to the high temperature and is discharged outward from the first waste gas pipe 75.

[0060] When a chemical reaction occurs, the uniform speed motor 54 is started to drive the small gear 53 to rotate, and the large gear 52 is slowed down by meshing, thereby driving one group of vacuum deposition tubes 40 to rotate at a uniform speed, and through the connection between the synchronous sprocket 50 and the synchronous sprocket 50, each group of vacuum deposition tubes 40 rotates synchronously, thereby improving the reaction rate and the uniformity of deposition. Embodiment 2

[0061] On the basis of the first embodiment, on the one hand, the exhaust gas generated in the vacuum deposition tube 40 is difficult to be discharged in time due to the pressure difference between the inside and the outside, and it is easy to introduce air and damage the indoor environment. On the other hand, the exhaust gas carries high-temperature heat, and direct discharge to the outside will cause heat waste. In order to solve the above technical problems, we have the following design, such as Figure 10-13 shown.

[0062] Specifically, a pipe seat 60 is fixed at the middle position of the lower end surface of the mixing cylinder 30, and an annular gas collecting pipe 61 is installed at the lower end of the pipe seat 60. The vacuum deposition pipe 40 is evenly distributed on the periphery of the annular gas collecting pipe 61. Corresponding to the upper position of the vacuum deposition pipe 40 (the heated exhaust gas in the vacuum deposition pipe 40 is easy to gather at the upper position), a plurality of groups of sealed gas collecting covers 62 are evenly distributed around the outer tube surface of the annular gas collecting pipe 61, such as Fig.10 and 11 shown.

[0063] A moving track 63 is provided in the middle of the end surface of each group of sealed air collecting hoods 62. A perforated partition plate 64 connected to the inside of the annular air collecting pipe 61 is installed inside the sealed air collecting hood 62. A plurality of groups of air holes are evenly distributed on the perforated partition plate 64. A sliding rod 65 is horizontally installed in the middle of the perforated partition plate 64 extending outward. Fig.11 shown.

[0064] Furthermore, a rotary exhaust structure 9 that interacts with the sealed gas collecting hood 62 is installed at the upper outer side of each group of vacuum deposition tubes 40. The rotary exhaust structure 9 moves in a motion track 63 (the two are concentric circles). The motion track 63 plays a role of limiting and guiding. The sealed gas collecting hood 62 seals the moving rotary exhaust structure 9. The length of the sealed gas collecting hood 62 is greater than the moving rotary exhaust structure 9 (the rotary exhaust structure 9 moves slowly with the vacuum deposition tube 40). Fig.10 and 11 shown.

[0065] Specifically, the rotary exhaust structure 9 includes a bracket 91, a curved sealing port 92, a convex seal 93, a spring clamping groove 94, a connecting inner groove 95 and a sliding rod outer groove 96. Fig.12 shown.

[0066] In this embodiment, the bracket 91 is fixed to the outer side surface of the vacuum deposition tube 40, and a curved sealing opening 92 is opened through the middle of the bracket 91, and a convex sealer 93 is installed on the curved sealing opening 92. Spring grooves 94 are symmetrically opened on the bracket 91 and located on both sides of the curved sealing opening 92. A connecting inner groove 95 is opened on the bracket 91 and located at the upper and lower ends of the curved sealing opening 92. The connecting inner groove 95 is connected to the interior of the vacuum deposition tube 40, and a sliding rod outer groove 96 for the sliding rod 65 to move is opened on the outer end surface of the bracket 91.

[0067] Furthermore, the convex sealer 93 includes a sealing plate 931, a connecting piece 932, a connecting spring 933 and an arc convex surface 934. Fig.13 shown.

[0068] In this embodiment, the sealing plate 931 is sealed at the curved sealing opening 92 to form a seal, and the two are matched in size. A sealing strip is provided at the edge of the sealing plate 931, and connecting plates 932 are provided on both sides of the sealing plate 931. A connecting spring 933 extending into the spring slot 94 is fixed on the connecting plate 932. Under natural conditions, the connecting spring 933 generates a reset pulling force to make the sealing plate 931 tightly attached to the curved sealing opening 92. A circular arc convex surface 934 is provided on the middle outer surface of the sealing plate 931, and the circular arc convex surface 934 and the sliding rod 65 interact with each other.

[0069] Furthermore, a portion of the annular air collecting pipe 61 extends outward from the equipment body 1 and is connected to a suction pipe 66, and a suction pump 67 is installed in the middle of the suction pipe 66. Fig.10 and 11 shown.

[0070] Furthermore, a spiral coil 68 is disposed on the outer side of the mixing barrel 30, and the upper end of the suction pipe 66 is connected to the spiral coil 68. A heat preservation layer 69 is disposed around the outer side of the spiral coil 68. The heat preservation layer 69 plays a role in heat preservation. After the reaction gas is heated, the activity of the molecules increases significantly. Fig.10 shown.

[0071] The upper end of the spiral coil 68 is connected to a second exhaust pipe.

[0072] When the present embodiment is in use, when each group of vacuum deposition tubes 40 rotates, the rotary exhaust structure 9 outside the vacuum deposition tubes 40 will intermittently enter the sealed gas collecting cover 62 (enter once for each rotation), and make a circular motion along the motion track 63. During this process, the slide bar 65 on the sealed gas collecting cover 62 moves along the slide bar outer groove 96, contacts the sealing plate 931 and slides on it, and generates a relative force with the protruding arc convex surface 934, causing the sealing plate 931 to move (the connecting spring 933 is stretched), and the curved sealing port 92 and the connecting inner groove 95 are formed. The two vacuum tubes 40 and 40 are connected to each other, and the vacuum pump 67 is started at the same time, which acts on the suction pipe 66 and the annular gas collecting pipe 61 in turn, so that suction is generated at the position of the sealed gas collecting hood 62, and part of the high-temperature exhaust gas in the vacuum deposition tube 40 is sucked into the sealed gas collecting hood 62 through the curved sealing port 92 in time. The high-temperature exhaust gas is injected into the spiral coil 68 along the annular gas collecting pipe 61 and the suction pipe 66 in turn, and flows slowly along the spiral coil 68, transferring its own heat to the mixing barrel 30, preheating the two reaction gases in the mixing chamber, and then being discharged through the second exhaust pipe, and the operation is repeated in this way.

[0073] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device.

[0074] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A semiconductor substrate processing device, comprising a device body (1), characterized in that: A limit guide groove (2) is provided at a lower position inside the device body (1), a tooling seat (3) is movably arranged inside the limit guide groove (2), a plurality of groups of trays (10) are evenly distributed inside the tooling seat (3), each group of trays (10) contains a semiconductor wafer (11), a hydraulic telescopic rod (4) is horizontally welded at the middle position of the rear end of the tooling seat (3), the hydraulic telescopic rod (4) extends outward from the inside of a hydraulic cylinder (5), the hydraulic cylinder (5) is mounted on a tailstock (6), and the tailstock (6) is riveted to the middle position of the rear end surface of the device body (1); An inlet and outlet (15) is provided at a position where the front end surface of the device body (1) communicates with the limiting guide groove (2), grooves (14) are symmetrically provided on both sides of the inlet and outlet (15), and a compressed air structure (8) is installed in each group of grooves (14). A sealing plate (12) is provided at the front end of the tooling seat (3), and curved pressure heads (13) are symmetrically welded at both ends of the sealing plate (12); A vacuum deposition tube (40) is disposed inside the device body (1) and above the tray (10), the upper end of the vacuum deposition tube (40) being connected to the lower end surface of the mixing barrel (30) via a sealing bearing (41), a heating section (45) being disposed in the middle of the vacuum deposition tube (40), a heater (46) being installed on the outside of the heating section (45), and the outer side surface of the heater (46) being fixed to the inner wall of the device body (1); A mixing cylinder (30) is fixed at the middle position of the upper end surface of the device body (1), a mixing chamber is provided inside the mixing cylinder (30), an air flow channel corresponding to the upper end of each group of vacuum deposition tubes (40) is provided at the bottom of the mixing chamber, and a first air inlet pipe (72) and a second air inlet pipe (74) are provided on both sides of the mixing cylinder (30), and the first air inlet pipe (72) and the second air inlet pipe (74) are both connected to the interior of the mixing chamber.

2. The semiconductor substrate processing equipment according to claim 1, characterized in that: The compressed air structure (8) comprises an air cylinder (81), a mounting sleeve (82), an air storage chamber (83), a limiting opening (84), a movable rod (85), an arc slider (86), an air plug seat (87), a reset spring (88) and an exhaust hole (89); the air cylinder (81) is horizontally fixed in the inner layer of the device body (1) through the mounting sleeve (82); an air storage chamber (83) is provided inside the air cylinder (81); a limiting opening (84) is provided at the middle position of one end surface of the air cylinder (81); a movable rod (85) is movably provided inside the air storage chamber (83) and passes through the limiting opening (84); the movable rod (85) is movable in the inner part of the air storage chamber (83); An arc slider (86) is provided at one end of the movable rod (85) extending out of the limiting opening (84), and the arc slider (86) and the corresponding curved pressure head (13) interact with each other. An air plug seat (87) is fixed to one end of the movable rod (85) away from the arc slider (86), and the air plug seat (87) and the cavity wall of the air storage chamber (83) are fully fitted. A return spring (88) sleeved on the outside of the movable rod (85) is fixed between the air plug seat (87) and the limiting opening (84), and an exhaust hole (89) connected to the air storage chamber (83) is opened at the middle position of one end of the air cylinder (81) away from the limiting opening (84).

3. The semiconductor substrate processing equipment according to claim 2, characterized in that: The exhaust hole (89) is connected to an air guide tube (20). A connecting strip (21) is installed around the inner wall of the inlet and outlet (15). A sealing air bag (22) is glued to the outside of the connecting strip (21). A clamping groove for accommodating the sealing air bag (22) is opened on the inner wall of the inlet and outlet (15). After the sealing air bag (22) is inflated, it extends out of the clamping groove and acts on the outer surface of the sealing plate (12). The two groups of air guide tubes (20) are both extended outwardly and fixed to the connecting strip (21). The connection between the two is connected to the inside of the sealing air bag (22).

4. The semiconductor substrate processing equipment according to claim 1, characterized in that: A limit seat (31) is provided at the upper end of the mixing barrel (30), and a driving housing (32) is provided at the upper end of the limit seat (31). A crank (33) is rotatably provided at the middle position inside the driving housing (32), and a rotating shaft (35) is splined in the middle of the crank (33). The rotating shaft (35) and the servo motor (34) are connected via a coupling. The servo motor (34) is provided through the driving housing (32). The end of the crank (33) is hingedly connected to the upper end of a connecting rod (36), and the lower end of the connecting rod (36) is connected to a circular exhaust seat (37). A rod groove (38) for the connecting rod (36) to swing is provided at the middle position of the upper end surface of the circular exhaust seat (37). The circular exhaust seat (37) is arranged in the mixing chamber against the wall, and a plurality of groups of poking posts (39) are evenly distributed on the lower end surface of the circular exhaust seat (37).

5. The semiconductor substrate processing equipment according to claim 4, characterized in that: A curved rolling panel (42) is installed in the upper end tube of the vacuum deposition tube (40), a blocking air port (43) is provided in the middle of the curved rolling panel (42), a blocking ball (44) is movably provided on the blocking air port (43), and the poking column (39) passes through the air flow channel and extends into the vacuum deposition tube (40) during the downward movement, and acts on the corresponding blocking ball (44).

6. The semiconductor substrate processing equipment according to claim 5, characterized in that: A synchronous sprocket (50) is sleeved on each group of the vacuum deposition tubes (40) and is located below the heater (46). Several groups of the synchronous sprockets (50) are connected and driven by an external chain (51). A large gear (52) is also sleeved on one group of the vacuum deposition tubes (40). A small gear (53) is meshed with the large gear (52) on one side. The small gear (53) is sleeved on the output shaft of a uniform speed motor (54). The uniform speed motor (54) is fixedly arranged inside the device body (1).

7. The semiconductor substrate processing equipment according to claim 6, characterized in that: A tube seat (60) is fixed at the middle position of the lower end surface of the mixing barrel (30), and an annular gas collecting pipe (61) is installed at the lower end of the tube seat (60). A plurality of groups of sealed gas collecting hoods (62) are evenly distributed around the outer tube surface of the annular gas collecting pipe (61), and a moving track (63) is opened at the middle position of the end surface of each group of the sealed gas collecting hoods (62). A perforated partition plate (64) connected to the inside of the annular gas collecting pipe (61) is installed inside the sealed gas collecting hood (62), and a sliding rod (65) is horizontally installed in the middle of the perforated partition plate (64) extending outward. A rotary exhaust structure (9) that interacts with the sealed gas collecting hood (62) is installed at the upper position of the outer side of each group of the vacuum deposition tubes (40), and the rotary exhaust structure (9) moves in the moving track (63).

8. The semiconductor substrate processing equipment according to claim 7, characterized in that: The rotary exhaust structure (9) comprises a bracket (91), a curved sealing opening (92), a convex sealer (93), a spring clamping groove (94), a connecting inner groove (95) and a sliding rod outer groove (96); the bracket (91) is fixed to the outer side surface of the vacuum deposition tube (40); a curved sealing opening (92) is provided through the middle of the bracket (91); a convex sealer (93) is installed on the curved sealing opening (92); spring clamping grooves (94) are symmetrically provided on the bracket (91) and located on both sides of the curved sealing opening (92); a connecting inner groove (95) is provided on the bracket (91) and located at the upper and lower ends of the curved sealing opening (92); the connecting inner groove (95) is connected to the inside of the vacuum deposition tube (40); and a sliding rod outer groove (96) for the sliding rod (65) to move is provided on the outer end surface of the bracket (91).

9. The semiconductor substrate processing equipment according to claim 8, characterized in that: The convex sealer (93) comprises a sealing plate (931), a connecting piece (932), a connecting spring (933) and a circular arc convex surface (934); the sealing plate (931) blocks the curved sealing opening (92) to form a seal; connecting pieces (932) are provided on both sides of the sealing plate (931); a connecting spring (933) extending into a spring slot (94) is fixed on the connecting piece (932); a circular arc convex surface (934) is provided on the outer surface of the middle portion of the sealing plate (931); the circular arc convex surface (934) and the sliding rod (65) interact with each other.

10. The semiconductor substrate processing equipment according to claim 9, characterized in that: A portion of the annular air collecting pipe (61) extends outside the equipment body (1) and is connected to a suction pipe (66); a suction pump (67) is installed in the middle of the suction pipe (66); a spiral coil (68) is provided on the outer side of the mixing cylinder (30); the upper end of the suction pipe (66) is connected to the spiral coil (68); and a heat-insulating layer (69) is provided around the outer side of the spiral coil (68).

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