Semiconductor process equipment and air inlet assembly thereof

Abstract

The invention discloses semiconductor process equipment and an air inlet assembly thereof, and belongs to the technical field of semiconductors. The semiconductor process equipment comprises a cavity body, a base and a supporting shaft, the base is arranged in the cavity body, the supporting shaft penetrates through the cavity body and is connected with the base, the gas inlet assembly is used for introducing gas into the cavity body, and the gas inlet assembly comprises an adapter ring used for being connected with the supporting shaft and a guide ring used for being arranged outside the supporting shaft in a sleeving mode. The adapter ring is provided with a protective gas channel used for introducing protective gas, the adapter ring is provided with a plurality of first gas outlet holes at intervals in the circumferential direction of the adapter ring, and the protective gas channel communicates with the first gas outlet holes; the guide ring is used for being arranged outside the supporting shaft in a sleeving mode, at least part of the guide ring is located above the adapter ring, and an airflow gap allowing the protective gas to circulate is formed between the guide ring and the supporting shaft and communicates with the first air outlet holes. And the overflowing area of the airflow gap far away from the first air outlet hole is smaller than that of the airflow gap close to the first air outlet hole.

Description

Technical Field

[0001] The present application belongs to the field of semiconductor technology, and specifically relates to a semiconductor process equipment and an air intake component thereof. Background Art

[0002] In the field of semiconductor technology, atomic layer deposition technology is widely used in the semiconductor chip manufacturing process. Its gas intake method is mainly pulsed gas intake, so as to form layers of thin films on the surface of the wafer. Pulsed gas intake means that different process gases are introduced into the chamber body in sequence, and protective gas is continuously introduced for purging during the whole process. The protective gas is used to purge the non-process reaction area to prevent the process gas from entering the non-process reaction area, thereby avoiding chemical reactions and coating.

[0003] In the related art, semiconductor process equipment includes a chamber body, a base and an air intake assembly. The base is arranged in the chamber body, and the base can be raised and lowered between a process position and a wafer transfer position. When the base rises to the process position, a narrow annular gap is formed between the edge of the base and the chamber body. Process gas is introduced into the upper area of ​​the base, and the process gas processes the wafer carried by the base. The air intake assembly introduces protective gas into the lower area of ​​the base (i.e., the non-process reaction area), and the protective gas purges the lower area of ​​the base, and then the protective gas flows into the upper area of ​​the base through the annular gap to prevent the process gas from diffusing to the lower area of ​​the base through the annular gap, thereby preventing the process gas from coating or generating particles in the lower area of ​​the base.

[0004] However, the area below the base is prone to being unable to be purged by the protective gas, and the protective gas has limited blocking effect on the process gas. The process gas is still prone to diffuse to the area below the base to form a film or generate particles. Summary of the invention The purpose of the embodiments of the present application is to provide a semiconductor process equipment and an air intake component thereof, which can solve the problem in the related art that the protective gas of the semiconductor process equipment has a poor effect in blocking the diffusion of the process gas.

[0005] In a first aspect, an embodiment of the present application provides an air intake assembly of a semiconductor process equipment, wherein the semiconductor process equipment comprises a chamber body, a base and a support shaft, wherein the base is disposed in the chamber body, the support shaft passes through the chamber body and is connected to the base, and the air intake assembly is used to introduce gas into the chamber body, wherein the air intake assembly comprises: An adapter ring, the adapter ring is used to connect the support shaft, the adapter ring is provided with a protective gas channel for introducing protective gas, and the adapter ring is provided with a plurality of first gas outlet holes at intervals along its circumference, and the protective gas channel is respectively connected with each of the first gas outlet holes; A guide ring, wherein the guide ring is used to be sleeved on the outside of the support shaft, and at least a part of the guide ring is located above the adapter ring, so that an air flow gap for the protective gas to flow is formed between the guide ring and the support shaft, and the air flow gap is communicated with each of the first air outlets, respectively. The flow area of ​​the air flow gap far from the first air outlet is smaller than the flow area of ​​the air flow gap close to the first air outlet.

[0006] In the second aspect, an embodiment of the present application also provides a semiconductor process equipment, including a chamber body, a base, a support shaft and the above-mentioned air intake assembly, wherein the base is arranged in the chamber body, the support shaft passes through the chamber body and is connected to the base, and the air intake assembly is sleeved on the outside of the support shaft.

[0007] In the embodiment of the present application, the air inlet assembly is provided with an adapter ring and a guide ring. Through the protective gas channel of the adapter ring and the plurality of first air outlets, the protective gas is divided into multiple protective gas flows in the circumferential direction of the support shaft, and the multiple protective gas flows flow to the air flow gap at the same time, so that in the circumferential direction of the support shaft, the protective gas flows evenly to the lower area of ​​the base (i.e., the non-process reaction area) through the air flow gap. Moreover, since the flow area of ​​the air flow gap away from the first air outlet is smaller than the flow area of ​​the air flow gap close to the first air outlet, in the process of multiple protective gases flowing to the chamber body, the flow area of ​​the air flow gap is reduced, the protective gas is blocked and the speed increases, so that the guide ring sprays the protective gas evenly into the chamber body, which is conducive to the lower area of ​​the base being filled with protective gas. Moreover, the increase in the protective gas flow rate is more conducive to the protective gas blocking the process gas above the base from entering the lower area of ​​the base (i.e., the non-process reaction area), which is conducive to improving the effect of blocking the diffusion of process gas. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] Figure 1 It is a structural schematic diagram of semiconductor process equipment in the related art; Figure 2 is a cross-sectional view of a semiconductor process equipment disclosed in an embodiment of the present application; Figure 3 is a partial cross-sectional view of a semiconductor process equipment disclosed in an embodiment of the present application; Figure 4 is a cross-sectional view of the matching structure of the adapter ring, the guide ring and the support shaft disclosed in the embodiment of the present application; Figure 5 It is a schematic diagram of the cooperation between the adapter ring, the guide ring and the support shaft disclosed in the embodiment of the present application; Figure 6 It is a schematic diagram of the structure of the adapter ring disclosed in the embodiment of the present application; Figure 7 and Figure 8They are schematic diagrams of the structures of different parts of the adapter ring disclosed in this embodiment; Fig. 9 It is a schematic diagram of the cooperation of the base, the chamber body, the first ring and the second ring disclosed in one embodiment of the present application; Fig.10 is a schematic diagram of the cooperation of a base, a chamber body, a first ring and a second ring disclosed in another embodiment of the present application; Fig.11 It is one of the partial structural schematic diagrams of the air intake assembly disclosed in the embodiment of the present application; Fig.12 is a cross-sectional view of a partial structure of an air intake assembly disclosed in an embodiment of the present application; Fig.13 It is a schematic diagram of the effect of the rotating airflow disclosed in the embodiment of the present application; Fig.14 This is the second partial structural schematic diagram of the air intake assembly disclosed in the embodiment of the present application; Fig.15A is a top view of a partial structure of an air intake assembly disclosed in an embodiment of the present application; Fig. 15B is a front view of a partial structure of an air intake assembly disclosed in an embodiment of the present application; Figure 16-Figure 20 They are schematic diagrams of the cleaning gas channel and the second gas outlet hole disclosed in different embodiments of the present application; Fig.21 It is a schematic diagram of the distribution of cleaning gas in the non-process reaction area disclosed in the embodiment of the present application.

[0009] Description of reference numerals: 10'-intake assembly, 11'-intake plate, 12'-intake pipe, 13'-corrugated pipe, 10-Intake assembly, 100-adapter ring, 110-protective gas channel, 111-first air flow channel, 111a-first air inlet end, 111b-second air outlet end, 112-second air flow channel, 112a-first air inlet end, 112b-second air outlet end, 113-third air flow channel, 113a-first air inlet end, 113b-second air outlet end, 120-first air outlet hole, 130-fastening hole, 101-first adapter ring, 102-second adapter ring, 103-fastener, 104-spring washer, 105-gasket, 200-guide ring, a-airflow gap, 200a-guide surface, 210-protrusion, 300-First intake pipe, 400-gas distributor, 410-cleaning gas channel, 411-fourth gas flow channel, 411a-second gas inlet end, 411b-second gas outlet end, 412-fifth gas flow channel, 412a-second gas inlet end, 412b-second gas outlet end, 413-sixth gas flow channel, 413a-second gas inlet end, 413b-second gas outlet end, 420-second gas outlet, A-first direction, 401-base plate, 402-gas distribution plate, 403-gas distribution cover plate, 500- Second intake pipe, 20-chamber body, 201-upper cavity, 201a-lap joint, 202-lower cavity, 21-base, 22-support shaft, 22a-connecting protrusion, 23-air inlet block, 23a-air inlet hole, 24-chamber cover plate, 25-spray plate, 31-first ring, 31a-first protruding structure, 32-second ring, 32a-second protruding structure, b-flow channel, b1-first bending channel, b2-second bending channel, 40- Driving mechanism. DETAILED DESCRIPTION

[0010] The following will be combined with the drawings in the embodiments of the present application to clearly describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. All other embodiments obtained by ordinary technicians in this field based on the embodiments in the present application belong to the scope of protection of this application.

[0011] The terms "first", "second", etc. in the specification and claims of the present application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable under appropriate circumstances, so that the embodiments of the present application can be implemented in an order other than those illustrated or described here, and the objects distinguished by "first", "second", etc. are generally of one type, and the number of objects is not limited. For example, the first object can be one or more. In addition, "and / or" in the specification and claims represents at least one of the connected objects, and the character " / " generally indicates that the objects associated with each other are in an "or" relationship.

[0012] In the related art, reference Figure 1As shown, a base 21 and a support shaft 22 are provided in the chamber body 20, and the upper end of the support shaft 22 is connected to the base 21. An opening is provided at the top of the chamber body 20, and an air inlet block 23, a chamber cover plate 24 and a spray plate 25 are provided at the opening in sequence. The spray plate 25 is located above the base 21. The air inlet block 23 is provided with an air inlet hole 23a. The process gas introduced through the air inlet hole 23a flows through the air inlet block 23, the chamber cover plate 24 and the spray plate 25 in sequence, and then enters the chamber body 20. The chamber cover plate 24 is used to diffuse the process gas, and the diffused process gas is sprayed to the top of the base 21 through the spray holes of the spray plate 25.

[0013] When the base 21 is located at the process position, an annular gap is formed between the edge of the base 21 and the chamber body 20, and process gas is introduced into the upper area of ​​the base 21 through the air inlet block 23, the chamber cover 24 and the spray plate 25, and the process gas processes the wafer carried by the base 21. At the same time, the air inlet component 10' is used to introduce protective gas into the gap between the chamber body 20 and the support shaft 22, and the protective gas enters the lower area of ​​the base 21 (that is, the non-process reaction area), and the protective gas purges the lower area of ​​the base 21, and then the protective gas flows into the upper area of ​​the base 21 through the annular gap to prevent the process gas from diffusing to the lower area of ​​the base 21 through the annular gap, thereby preventing the process gas from coating or generating particles in the lower area of ​​the base 21.

[0014] However, the structure of the gas inlet assembly 10' is relatively simple, the uniformity of the protective gas entering the non-process reaction area is poor, and the purging effect of the protective gas on the non-process reaction area is poor, especially there is a purging dead angle at the connection between the base 21 and the support shaft 22, and the process gas is still easy to enter the non-process reaction area, thereby forming a film and generating particles in the non-process reaction area. In addition, the protective gas has limited blocking effect on the process gas, especially for process gas with a large gas volume and process gas with a small gas volume, which are more likely to diffuse into the non-process reaction area, and the blocking effect on the process gas is poor, which is not conducive to the process of the wafer.

[0015] In addition, due to the concentration difference between the process gas and the protective gas, it is difficult to avoid the process gas from diffusing into the lower area of ​​the base 21 (i.e., the non-process reaction area), thereby forming a thin film and generating particles in the lower area of ​​the base 21; the temperature of the bottom of the base 21 and the support shaft 22 is relatively high, so the bottom of the base 21 and the support shaft 22 are more easily coated, thereby generating particles.

[0016] Based on this, an embodiment of the present application provides a semiconductor process equipment and an air intake component thereof to solve the problem in the related art that the protective gas introduced by the air intake component has limited blocking effect on the process gas, and the area below the base 21 is prone to coating and particle generation.

[0017] The semiconductor process equipment and the air intake assembly thereof provided by the embodiments of the present application are described in detail below through specific embodiments and their application scenarios in combination with the accompanying drawings.

[0018] Please refer to Figure 2-Figure 21 The air intake assembly 10 disclosed in the embodiment of the present application is a part of a semiconductor process device, and the semiconductor process device includes a chamber body 20, a base 21 and a support shaft 22, wherein the base 21 is arranged in the chamber body 20, the base 21 is used to carry the wafer, the support shaft 22 is used to support the base 21, and the support shaft 22 runs through the chamber body 20 and is connected to the base 21. Optionally, the upper end of the support shaft 22 and the bottom surface of the base 21 can be fixedly connected by welding, bonding, etc. Moreover, the support shaft 22 can drive the base 21 to rotate so that the wafer carried by the base 21 is evenly processed.

[0019] The air intake assembly 10 is used to introduce gas into the chamber body 20, including protective gas, including but not limited to nitrogen. The air intake assembly 10 is located between the chamber body 20 and the support shaft 22, and the air intake assembly 10 uses the gap between the chamber body 20 and the support shaft 22 to introduce protective gas.

[0020] Specifically, combined Figure 4-Figure 8 As shown, the air intake assembly 10 includes an adapter ring 100 and a guide ring 200, wherein the adapter ring 100 is used to connect the support shaft 22, and the connection method between the adapter ring 100 and the support shaft 22 is not limited to welding, bolt connection, etc. The protective gas is introduced into the gap between the chamber body 20 and the support shaft 22 through the adapter ring 100, and the guide ring 200 is used to limit the airflow of the protective gas introduced by the adapter ring 100 to increase the flow rate of the protective gas.

[0021] The adapter ring 100 is provided with a protective gas channel 110 for introducing protective gas, and the adapter ring 100 is provided with a plurality of first gas outlet holes 120 at intervals along its circumference, and the protective gas channel 110 is respectively connected with each first gas outlet hole 120. Optionally, one protective gas channel 110 can be provided, and the protective gas channel 110 is respectively connected with each first gas outlet hole 120, or a plurality of protective gas channels 110 are provided, and the protective gas channels 110 and the first gas outlet holes 120 are connected one by one. The first gas outlet hole 120 can be a square hole, a circular hole, etc., and the embodiment of the present application does not limit the structure of the first gas outlet hole 120 and the protective gas channel 110. Optionally, the axial direction of the first gas outlet hole 120 is parallel to the support shaft 22.

[0022] In this way, the protective gas is divided into multiple airflows in the circumferential direction of the support shaft 22 through the protective gas channel 110 and the multiple first air outlet holes 120, and the multiple airflows flow to the airflow gap a at the same time, so that in the circumferential direction of the support shaft 22, the protective gas flows evenly through the airflow gap a to the lower area of ​​the base 21 (i.e., the non-process reaction area).

[0023] refer to Figure 4 As shown, the guide ring 200 is used to be sleeved on the outside of the support shaft 22, and at least part of the guide ring 200 is located above the adapter ring 100. Optionally, the entire guide ring 200 can be located above the adapter ring 100, or a part of the guide ring 200 is located above the adapter ring 100, and the other part of the guide ring 200 is opposite to the adapter ring 100 in a direction perpendicular to the support shaft 22, that is, the other part of the guide ring 200 is opposite to the adapter ring 100 in the horizontal direction. An airflow gap a for the flow of protective gas is formed between the guide ring 200 and the support shaft 22, and the airflow gap a is connected to each first air outlet 120 respectively, and the airflow gap a is an annular structure. In this way, the protective gas flowing out of the multiple first air outlets 120 of the adapter ring 100 enters the airflow gap a, and enters the chamber body 20 through the airflow gap a.

[0024] Moreover, the flow area of ​​the airflow gap a away from the first air outlet 120 is smaller than the flow area of ​​the airflow gap a near the first air outlet 120. That is to say, along the outlet direction of the first air outlet 120, the flow area of ​​the airflow gap a will change, and the flow area of ​​the airflow gap a will decrease in the process of the protective gas flowing to the chamber body 20. Optionally, along the outlet direction of the first air outlet 120, the flow area of ​​the airflow gap a can decrease suddenly or evenly. The embodiment of the present application does not limit how the flow area is reduced. In short, the protective gas is blocked by reducing the flow area and the speed is increased.

[0025] In the embodiment of the present application, the air inlet assembly 10 is provided with an adapter ring 100 and a guide ring 200. Through the protective gas channel of the adapter ring and the plurality of first air outlets 120, the protective gas is divided into a plurality of protective gas flows in the circumferential direction of the support shaft 22, and the plurality of protective gas flows simultaneously flow to the air flow gap a, so that in the circumferential direction of the support shaft 22, the protective gas flows evenly to the lower area (i.e., the non-process reaction area) of the base 21 through the air flow gap a. Moreover, since the flow area of ​​the air flow gap away from the first air outlet 120 is smaller than the flow area of ​​the air flow gap close to the first air outlet 120, in the process of the plurality of protective gases flowing to the chamber body 20, the flow area of ​​the air flow gap a is reduced, the protective gas is blocked and the speed increases, so that the guide ring 200 sprays the protective gas evenly into the chamber body 20, which is conducive to the lower area of ​​the base 21 being filled with protective gas. Moreover, the increase in the flow rate of the protective gas is more conducive to the protective gas blocking the process gas above the base 21 from entering the lower area (i.e., the non-process reaction area) of the base 21, which is conducive to improving the effect of blocking the diffusion of the process gas.

[0026] In an optional embodiment, the inner wall surface of the guide ring 200 includes a guide surface 200 a located above the adapter ring 100 , and along the outlet direction of the first outlet hole 120 , the distance from the guide surface 200 a to the axis of the guide ring 200 decreases.

[0027] Optionally, the axis of the guide ring 200 is colinear with the axis of the support shaft 22, and along the air outlet direction of the first air outlet 120, the distance from the guide surface 200a to the axis of the guide ring 200 decreases uniformly, and the guide surface 200a is an annular cone; or, along the air outlet direction of the first air outlet 120, the distance from the guide surface 200a to the axis of the guide ring 200 decreases unevenly, and the guide surface 200a protrudes toward the side where the axis of the guide ring 200 is located, or, the guide surface 200a protrudes in the direction away from the axis of the guide ring 200.

[0028] With such arrangement, in the process of multiple streams of protective gas flowing toward the chamber body 20, they will pass through the gap between the guide surface 200a and the support shaft 22. Since in the outlet direction of the first outlet hole 120, the distance from the guide surface 200a to the axis of the guide ring 200 decreases, it means that the gap between the guide surface 200a and the support shaft 22 gradually decreases, and the flow area of ​​the protective gas gradually decreases. Therefore, under the guiding action of the guide surface 200a, the protective gas is blocked and its speed increases, so that the guide ring 200 can evenly spray the protective gas into the chamber body 20, which is beneficial for the area below the base 21 to be filled with protective gas. Moreover, the increase in the flow rate of the protective gas is more conducive to blocking the process gas above the base 21 from entering the area below the base 21 (i.e., the non-process reaction area), which is beneficial to enhance the effect of blocking the diffusion of process gas.

[0029] Of course, in other embodiments, along the outlet direction of the first air outlet 120, the distance from the guide surface 200a to the axis of the guide ring 200 may not show a decreasing pattern, and the guide surface 200a may also be a bent surface. In short, along the outlet direction of the first air outlet 120, the flow area of ​​the airflow gap a can be reduced.

[0030] In the scheme of the present application, the protective gas channel 110 includes at least two levels of first gas distribution channels, each level of the first gas distribution channel is provided with a first gas inlet end and at least two first gas outlet ends, wherein the two first gas outlet ends are located at the two ends of the first gas distribution channel, and the first gas inlet end is located in the middle position of the first gas distribution channel.

[0031] In two adjacent first air-dividing channels, the first air outlet of the first air-dividing channel of the upper level is connected to the first air inlet of the first air-dividing channel of the lower level. That is to say, the airflow entering the first air-dividing channel of the upper level is divided into at least two streams, and these at least two streams flow into the first air-dividing channel of the lower level through at least two first air outlets, and are further diverted through the first air-dividing channel of the lower level. The number of first air-dividing channels of each level can be one or more, and the embodiment of the present application does not limit the number of first air-dividing channels. In short, the number of first air-dividing channels of the lower level is at least twice the number of first air-dividing channels of the upper level; the extension lengths of the first air-dividing channels of each level can be equal or unequal.

[0032] refer to Figure 4 and Figure 6 As shown, the air intake assembly 10 also includes a first air intake pipe 300, and the first air intake pipe 300 is connected to the adapter ring 100, and the first air intake end of the first-stage first air distribution channel is connected to the first air intake pipe 300. Optionally, the first air intake pipe 300 and the adapter ring 100 can be fixedly connected by welding or the like. The first air intake pipe 300 extends into the space surrounded by the adapter ring 100, and the first air intake pipe 300 is located below the support shaft 22. The first air outlet end of the last-stage first air distribution channel is respectively connected to each first air outlet hole 120. In this way, the protective gas is introduced into the first-stage first air distribution channel through the first air intake pipe 300, and the protective gas flows out from each first air outlet hole 120 after being diverted by multiple stages of first air distribution channels.

[0033] Optionally, each first gas distribution channel is provided with a first gas inlet end and two first gas outlet ends, Figure 6 and Figure 7As shown, the first air distribution channel can be two-stage, namely a first air flow channel 111 and two second air flow channels 112, the two second air flow channels 112 are arranged at intervals along the circumference of the adapter ring 100, the first air inlet end 111a of the first air flow channel 111 is connected to the first air inlet pipe 300, the two first air outlet ends 111b of the first air flow channel 111 are respectively connected to the first air inlet ends 112a of the two second air flow channels 112, and the first air outlet ends 112b of the two second air flow channels 112 are respectively connected to the first Alternatively, the first gas distribution channel can be three-level, including four third gas distribution channels 113 in addition to the first gas flow channel 111 and the two second gas flow channels 112, the four third gas flow channels 113 are arranged at intervals along the circumference of the adapter ring 100, the first gas outlet ends 112b of the two second gas flow channels 112 are respectively connected to the first gas inlet ends 113a of the four third gas flow channels 113, and the first gas outlet ends 113b of the four third gas flow channels 113 are respectively connected to each first gas outlet hole 120. Of course, the protective gas channel 110 can include more levels of first gas distribution channels.

[0034] By adopting this embodiment, a multi-stage first gas distribution duct is utilized, so that the protective gas provided by the first air inlet pipe 300 can be divided into multiple streams step by step, and then the gas is supplied to each first air outlet 120 at the same time. There is no need to set up multiple first air inlet pipes 300 at the same time, and the number of first air inlet pipes 300 is reduced, thereby simplifying the structure of the air inlet component, and also facilitating simplifying the operation of introducing the protective gas.

[0035] Of course, in other embodiments, the protective gas channel 110 may not be provided with a multi-level first gas distribution channel, and the first air inlet pipe 300, the protective gas channel 110 and the first air outlet 120 are connected one by one, and gas can be supplied to each first air outlet 120 through the corresponding protective gas channel 110 through multiple first air inlet pipes 300. In an optional embodiment, each level of the first gas distribution channel is provided with a first gas inlet end and two first gas outlet ends, and each level of the first gas distribution channel extends along the circumference of the adapter ring 100, that is, the first gas distribution channel is an arc-shaped channel. Moreover, in the circumference of the adapter ring 100, the distance between the first gas inlet end and the two first gas outlet ends of the same first gas distribution channel is equal. In other words, the first gas inlet end is located at the center of the first gas distribution channel.

[0036] Optionally, the distance between the first air inlet end and the two first air outlet ends of some of the first air sub-channels may be equal, or the distance between the first air inlet end and the two first air outlet ends of each first air sub-channel may be equal. Further optionally, the distance between the first air inlet end 111a and the two first air outlet ends 111b of the same first air flow channel 111 is equal, the distance between the first air inlet end 112a and the two first air outlet ends 112b of the same second air flow channel 112 is equal, and the distance between the first air inlet end 113a and the two first air outlet ends 113b of the same third air flow channel 113 is equal.

[0037] By adopting this embodiment, the protective gas entering the first gas distribution ducts of each level is divided into two streams, and the path lengths of the two protective gases flowing to the two first gas outlet ends are equal. Therefore, the time for the two protective gases to flow to the first gas distribution duct of the next level tends to be equal, which is beneficial for the protective gas to flow out of each first gas outlet hole 120 at the same time, and is beneficial for improving the uniformity of the purging of the protective gas.

[0038] Of course, in other embodiments, in the circumferential direction of the adapter ring 100 , the distances between the first air inlet end and the two first air outlet ends of the same first air distribution channel are not equal.

[0039] In this embodiment, the protective gas channel 110 includes three levels of first gas distribution channels, namely the first air flow channel 111, the second air flow channel 112 and the third air flow channel 113 mentioned above, the number of the first air inlet pipe 300 and the first air flow channel 111 is 1, the number of the second air flow channels 112 is 2, the number of the third air flow channels 113 is 4, and the number of the first air outlet holes 120 is 8.

[0040] In an alternative embodiment, reference Figure 5 and Figure 6 As shown, the adapter ring 100 includes a first adapter ring 101 and a second adapter ring 102 connected to each other. The first adapter ring 101 is located below the second adapter ring 102. Figure 7 As shown, the first adapter ring 101 is provided with a protective gas channel 110, referring to Figure 8 As shown, the second adapter ring 102 is provided with a plurality of first air outlet holes 120. Optionally, the second adapter ring 102 is connected to the support shaft 22, and the two are connected by a fastener 103.

[0041] Specifically, the air intake assembly 10 further includes a plurality of fasteners 103, a plurality of spring washers 104, and a plurality of gaskets 105. The fasteners 103 may be screws, bolts, etc. Figure 8 As shown, the second adapter ring 102 is provided with a plurality of fastening holes 130, which can be threaded holes. The fastening holes 130, the fasteners 103, the spring washers 104 and the gaskets 105 correspond to each other one by one. Figure 4 As shown, the lower end of the support shaft 22 is provided with a connecting protrusion 22a, and each fastener 103 respectively penetrates the corresponding spring washer 104 and the corresponding gasket 105 and extends into the corresponding fastening hole 130, and the gasket 105 cooperates with the connecting protrusion 22a in the axial upper limit of the adapter ring 100, so that the support shaft 22 and the adapter ring 100 are relatively fixed, and the support shaft 22 and the adapter ring 100 are connected. When each fastener 103 is loosened, the gasket 105 can be separated from the adapter ring 100, and then the gasket 105 no longer limits the connecting protrusion 22a, and the support shaft 22 and the adapter ring 100 can be separated, so that the adapter ring 100 is disassembled.

[0042] Optionally, the number of the fastening holes 130 , the fasteners 103 , the spring washers 104 and the gaskets 105 are all 8. Of course, other numbers may also be set. In the circumferential direction of the adapter ring 100 , the fastening holes 130 and the first air outlet holes 120 are alternately distributed.

[0043] In the related art, reference Figure 1 As shown, the air intake assembly 10' comprises an air intake member 11', an air intake pipe 12' and a bellows 13', the air intake member 11' is connected to the lower end of the support shaft 22, and the air intake member 11' is provided with an air intake channel connected to the air intake pipe 12', the bellows 13' is sleeved on the outside of the support shaft 22, and the upper end of the bellows 13' is connected to the chamber body 20, the lower end of the bellows 13' is connected to the air intake member 11', and the flow gap between the bellows 13' and the support shaft 22 is connected to the air intake channel. In this way, the cleaning gas and the protective gas can enter the lower area of ​​the base 21 in the chamber body 20 through the air intake pipe 12', the air intake channel and the flow gap in sequence.

[0044] In the scheme of this application, reference Fig.11 and Fig.12 As shown, the air intake assembly 10 further includes an air distributor 400, which is an annular structure. The air distributor 400 is sleeved on the guide ring 200. Optionally, the air distributor 400 is sleeved on the outside of the guide ring 200, or the air distributor 400 is sleeved on the inside of the guide ring 200. Moreover, the air distributor 400 is connected to the chamber body 20. Optionally, the air distributor 400 and the chamber body 20, and the air distributor 400 and the guide ring 200 can be connected by welding or the like.

[0045] The gas distributor 400 is provided with a cleaning gas channel 410 for introducing a cleaning gas. The cleaning gas may be a fluorine-containing gas, including but not limited to chlorine trifluoride (ClF3); Fig.14As shown, the gas distributor 400 is provided with a plurality of second gas outlet holes 420 at intervals along its circumferential direction, and the cleaning gas channel 410 is respectively connected to each second gas outlet hole 420. Optionally, one cleaning gas channel 410 may be provided, and the cleaning gas channel 410 is respectively connected to each second gas outlet hole 420, or a plurality of cleaning gas channels 410 are provided, and the cleaning gas channels 410 are connected to the first gas outlet holes 120 in a one-to-one correspondence. The second gas outlet holes 420 may be square holes, circular holes, etc., and the embodiments of the present application do not limit the structures of the second gas outlet holes 420 and the cleaning gas channels 410.

[0046] In this embodiment, cleaning gas is introduced into the chamber body 20 through the gas separator 400, and the coating and particles in the non-process reaction area are cleaned by the cleaning gas. In addition, the gas separator 400 is provided with a plurality of second gas outlets 420, so that the cleaning gas is divided into a plurality of gas streams in the circumferential direction of the support shaft 22, and the plurality of gas streams flow to the lower area of ​​the base 21 (i.e., the non-process reaction area) at the same time, so that the uniformity of the cleaning gas is improved in the circumferential direction of the support shaft 22, which is conducive to uniformly cleaning the coating and particles and improving the cleaning effect.

[0047] In an optional embodiment, the outlet direction of each second air outlet hole 420 intersects or is parallel to the axial direction of the air distributor 400. Specifically, the angle between the outlet direction of the second air outlet hole 420 and the plane perpendicular to the axis of the air distributor 400 is β. When the outlet directions of the second air outlet holes 420 intersect the axial direction of the air distributor 400, 0°<β<90°. When the outlet directions of the second air outlet holes 420 are parallel to the axial direction of the air distributor 400, β=90°. The angle β between the outlet direction of each second air outlet hole 420 and the axial direction of the air distributor 400 may be equal or unequal.

[0048] Optionally, refer to Fig.16 As shown, α=0°, β=60°; or, refer to Fig.17 As shown, α=0°, β=90°, and of course, β may also be other angles.

[0049] In a further embodiment, the outlet directions of the second outlet holes 420 intersect with the first direction A respectively. Fig.15A and Fig. 15B As shown, the first direction A is perpendicular to the axis of the gas separator 400 , and is parallel to the plane where the gas separator 400 is located. The first direction A is the direction from the center of the inlet end of the second air outlet 420 to the axis of the gas separator 400 .

[0050] That is, the gas outlet direction of each second gas outlet 420 intersects with the direction from the center of the inlet end of the second gas outlet 420 to the axis of the gas distributor 400, so that the cleaning gas flowing out through the cleaning gas channel 410 and each second gas outlet 420 forms a rotating gas flow. In other words, the first direction A corresponding to each second gas outlet 420 is different, the gas outlet direction of each second gas outlet 420 is inclined relative to the corresponding first direction A, and the angle between the gas outlet direction of each second gas outlet 420 and the corresponding first direction A is α, α>0°, and each second gas outlet 420 is inclined toward the same side in the circumferential direction of the gas distributor 400, and the angle α between the gas outlet direction of each second gas outlet 420 and the corresponding first direction A may be equal or unequal.

[0051] Optionally, refer to Fig.15A and Fig. 15B As shown, α=30°, β=60°; of course, α may also be other angles.

[0052] In this embodiment, the gas outlet direction of each second gas outlet hole 420 intersects with the first direction A, and the gas outlet direction of each gas outlet hole is inclined toward the same side in the circumferential direction of the gas separator 400, so that the cleaning gas flowing out of each second gas outlet hole 420 flows upward around the support shaft 22 to form a rotating airflow. The rotating airflow gradually reaches the bottom surface of the base 21 and diffuses, which is conducive to the diffusion of the cleaning gas in the non-process reaction area, thereby comprehensively cleaning the non-process reaction area and improving the cleaning effect.

[0053] Of course, in other embodiments, the outlet directions of the second air outlet holes 420 are respectively parallel to the first direction A, that is, α=0°.

[0054] In the scheme of the present application, the cleaning gas channel 410 includes at least two levels of second gas distribution channels, and each level of the second gas distribution channels is provided with a second gas inlet end and at least two second gas outlet ends, wherein the two second gas outlet ends are located at the two ends of the second gas distribution channel, and the second gas inlet end is located in the middle position of the second gas distribution channel.

[0055] In two adjacent levels of second air-dividing air ducts, the second air outlet end of the second air-dividing air duct of the upper level is connected to the second air inlet end of the second air-dividing air duct of the lower level. In other words, the airflow entering the second air-dividing air duct of the upper level is divided into at least two streams, and these at least two streams flow into the second air-dividing air duct of the lower level through at least two second air outlet ends, and are further diverted through the second air-dividing air duct of the lower level. The number of second air-dividing air ducts at each level can be one or more, and the embodiment of the present application does not limit the number of second air-dividing air ducts. In short, the number of second air-dividing air ducts of the lower level is at least twice the number of second air-dividing air ducts of the upper level; the extension lengths of the second air-dividing air ducts at each level can be equal or unequal.

[0056] refer to Figure 11-Figure 14 As shown, the air intake assembly 10 further includes a second air intake pipe 500, which is connected to the air distributor 400, the second air intake end of the first-stage second air distributor is connected to the second air intake pipe 500, and the second air outlet end of the last-stage second air distributor is connected to each second air outlet hole 420. Optionally, the second air intake pipe 500 and the air distributor 400 can be fixedly connected by welding or the like. In this way, the cleaning gas is introduced into the first-stage second air distributor through the second air intake pipe 500, and the cleaning gas flows out from each second air outlet hole 420 after being divided by multiple-stage second air distributors.

[0057] Optionally, each second gas distribution channel is provided with a second gas inlet end and two second gas outlet ends, Fig.16 and Fig.17 As shown, the second gas distribution channel can be two-stage, namely a fourth gas flow channel 411 and two fifth gas flow channels 412, the two fifth gas flow channels 412 are arranged at intervals along the circumference of the gas distribution member 400, the second air inlet end 411a of the fourth gas flow channel 411 is connected to the second air inlet pipe 500, the two second air outlet ends 411b of the fourth gas flow channel 411 are respectively connected to the second air inlet ends 412a of the two fifth gas flow channels 412, and the second air outlet ends 412b of the two fifth gas flow channels 412 are respectively connected to each second air outlet hole 420; or, the second gas distribution channel can be three-stage, refer to Fig. 20 As shown, in addition to the fourth airflow channel 411 and the two fifth airflow channels 412, four sixth airflow channels 413 are also included. The four sixth airflow channels 413 are arranged at intervals along the circumference of the gas distribution member 400. The second gas outlet ends 412b of the two fifth airflow channels 412 are respectively connected to the second gas inlet ends 413a of the four sixth airflow channels 413, and the second gas outlet ends 413b of the four sixth airflow channels 413 are respectively connected to the second gas outlet holes 420. Of course, the cleaning gas channel 410 can include more levels of second gas distribution channels. By adopting this embodiment, a multi-stage second gas distribution channel is utilized, so that the cleaning gas provided by the second air inlet pipe 500 can be divided into multiple streams step by step, and then the gas is supplied to each second air outlet 420 at the same time. There is no need to set up multiple second air inlet pipes 500 at the same time, and the number of second air inlet pipes 500 is reduced, thereby simplifying the structure of the air inlet component 10, which is conducive to simplifying the operation of introducing the cleaning gas.

[0058] Of course, in other embodiments, the cleaning gas channel 410 may not be provided with a multi-level second gas distribution channel, and the second air inlet pipe 500, the cleaning gas channel 410 and the second air outlet 420 are connected one by one, and gas can be supplied to each second air outlet 420 through the corresponding protective gas channel 110 through multiple second air inlet pipes 500.

[0059] In an optional embodiment, each level of the second gas distribution channel is provided with a second gas inlet end and two second gas outlet ends, and each level of the second gas distribution channel extends along the circumference of the gas distribution member 400, that is, the second gas distribution channel is an arc-shaped channel. Moreover, in the circumference of the gas distribution member 400, the distance between the second gas inlet end and the two second gas outlet ends of the same second gas distribution channel is equal. In other words, the second gas inlet end is located at the center of the second gas distribution channel.

[0060] Optionally, the distance between the second air inlet end and the two second air outlet ends of some of the second air sub-channels may be equal, or the distance between the second air inlet end and the two second air outlet ends of each second air sub-channel may be equal. Further optionally, the distance between the second air inlet end 411a and the two second air outlet ends 411b of the same fourth air flow channel 411 is equal, the distance between the second air inlet end 412a and the two second air outlet ends 412b of the same fifth air flow channel 412 is equal, and the distance between the second air inlet end 413a and the two second air outlet ends 413b of the same sixth air flow channel 413 is equal.

[0061] By adopting this embodiment, the cleaning gas entering the second gas distribution channel of each level is divided into two streams, and the path lengths of the two cleaning gases flowing to the two second gas outlet ends are equal. Therefore, the time for the two cleaning gases to flow to the first gas distribution channel of the next level tends to be equal, which is more conducive to the simultaneous outflow of cleaning gas from each second gas outlet 420, and is beneficial to further improve the uniformity of the cleaning gas.

[0062] Of course, in other embodiments, in the circumferential direction of the gas dividing member 400 , the distances between the second gas inlet end and the two second gas outlet ends of the same second gas dividing channel are not equal.

[0063] In this embodiment, the cleaning gas channel 410 includes two levels of second gas distribution channels, namely the fourth air flow channel 411 and the fifth air flow channel 412 mentioned above, the number of the second air inlet pipe 500 and the fourth air flow channel 411 is 1 each, the number of the fifth air flow channel 412 is 2, the number of the sixth air flow channel 413 is 4, and the number of the second air outlet holes 420 is 8.

[0064] In the scheme of this application, reference is made to Fig.12 As shown, the gas separation component 400 includes a base plate 401, a gas separation plate 402 and a gas separation cover plate 403. The base plate 401 is connected to the gas separation plate 402. The base plate 401 and the gas separation plate 402 can be connected by a non-detachable method such as welding, or by a detachable method such as screws. The base plate 401 and the gas separation plate 402 together form a cleaning gas channel 410; the gas separation cover plate 403 is arranged on the side of the gas separation plate 402 facing away from the base plate 401. Optionally, a second air outlet 420 is opened on the gas separation cover plate 403.

[0065] Moreover, the outer wall surface of the guide ring 200 is provided with a protrusion 210, and the protrusion 210 protrudes from the outer wall surface of the guide ring 200. The gas separation cover plate 403, the protrusion 210 and the gas separation plate 402 are sequentially limited and matched, so that the gas separation member 400 and the guide ring 200 are relatively fixed. Optionally, the gas separation cover plate 403, the protrusion 210 and the gas separation plate 402 are sequentially limited and matched in the axial direction of the support shaft 22, and the gas separation cover plate 403 presses the protrusion 210 on the gas separation plate 402.

[0066] Optionally, when the gas distributor 400 is installed to the chamber body 20 , the bottom plate 401 is connected to the inner wall surface of the chamber body 20 , and both the bottom plate 401 and the chamber body 20 are provided with openings for the second air inlet pipe 500 to pass through.

[0067] In this embodiment, the gas separator 400 adopts a split structure, which is convenient for separately opening the cleaning gas channel 410 and the second air outlet 420. Moreover, the split components of the gas separator 400 are limitedly matched with the raised portion 210 of the guide ring 200, which is conducive to achieving relative fixation of the gas separator 400 and the guide ring 200, and there is no need to perform a separate connection operation to fix the guide ring 200.

[0068] Of course, in other embodiments, the gas distributor 400 may also be an integrated structure, or the gas distributor 400 may not be provided with the gas distributor cover plate 403, and the guide ring 200 is connected to the gas distributor 400 separately.

[0069] refer to Fig.21 As shown in the schematic diagram of the distribution of the cleaning gas, the cleaning gas gathers toward the axis of the support shaft 22, and the concentration of the cleaning gas is higher in the area close to the support shaft 22; the concentration of the cleaning gas is lower in the area away from the support shaft 22. Therefore, the use of the air intake assembly 10 in this embodiment can effectively increase the concentration of the cleaning gas in the area close to the support shaft 22, avoid the existence of a cleaning dead angle at the connection between the base 21 and the support shaft 22, and help improve the cleaning effect.

[0070] Based on the air intake assembly 10 disclosed in the present application, the present application embodiment also discloses a semiconductor process equipment, referring to Figure 2 As shown, the semiconductor process equipment includes a chamber body 20, a base 21, a support shaft 22 and the air intake assembly 10 in the above embodiment, the base 21 is arranged in the chamber body 20, the support shaft 22 passes through the chamber body 20 and is connected to the base 21, and the air intake assembly 10 is sleeved on the outside of the support shaft 22.

[0071] Optionally, refer to Figure 2 and Figure 3 As shown, the chamber body 20 includes an upper cavity 201 and a lower cavity 202 connected to each other. The upper cavity 201 is located above the lower cavity 202 . An annular gap is formed between the upper cavity 201 and the base 21 . The support shaft 22 passes through the lower cavity 202 .

[0072] By adopting this embodiment, the air inlet component 10 of the semiconductor process equipment uniformly introduces protective gas into the lower area of ​​the base 21, i.e., the non-process reaction area, and the flow area of ​​the protective gas decreases, the protective gas is blocked and the speed increases, so the protective gas further blocks the process gas from diffusing downward, which is beneficial to improving the effect of blocking the diffusion of the process gas.

[0073] In the solution of the present application, the semiconductor process equipment also includes a first ring 31 and a second ring 32, the first ring 31 is sleeved on the outside of the base 21, the first ring 31 is connected to the edge of the base 21, and the second ring 32 is connected to the chamber body 20. Optionally, the first ring 31 can be connected to the edge of the base 21 by welding, bonding, etc., and the second ring 32 is connected to the upper cavity 201 by welding, bonding, etc. A flow channel b is formed between the first ring 31 and the second ring 32, and the airflow gap a is connected to the flow channel b. In this way, the cleaning gas entering the chamber body 20 through the airflow gap a can enter the upper area of ​​the base 21 through the flow channel b, and the protective gas flowing into the upper area of ​​the base 21 can be drawn away after merging with the process gas.

[0074] Optionally, the width of the flow channel b ranges from 1 mm to 10 mm.

[0075] In an alternative embodiment, reference Figure 3 As shown, the inner wall surface of the chamber body 20 is provided with an overlap portion 201a, the second collar 32 is directly overlapped with the overlap portion 201a, and the first collar 31 is directly overlapped with the upper surface of the base 21. In this configuration, the overlap portion 201a directly supports the second collar 32, and the base 21 directly supports the first collar 31, and there is no need to connect the first collar 31 with the base 21, and there is no need to connect the second collar 32 with the chamber body 20.

[0076] Optionally, to prevent the first ring 31 from rotating relative to the base 21, the first ring 31 and the base 21 can be positioned by positioning pins to prevent the first ring 31 from rotating and shaking; similarly, to prevent the second ring 32 from rotating relative to the chamber body 20, the second ring 32 and the base 21 can also be positioned by positioning pins to prevent the second ring 32 from rotating and shaking.

[0077] In an optional embodiment, the flow channel b is an annular structure, and the flow channel b extends along the axial direction of the base 21.

[0078] In another embodiment, the flow passage b is a meandering passage, that is, the flow passage b does not extend along the axial direction of the base 21 .

[0079] With such a configuration, the flow channel b is a curved channel, and the path of the gas flow through the flow channel b is extended, thereby increasing the flow resistance during the gas flow, causing the gas flow to be turbulent and partially stagnant, thereby preventing the process gas above the base 21 from entering the lower area of ​​the base 21 through the flow channel b, and effectively preventing the process gas from diffusing downward.

[0080] In an optional embodiment, the first ring 31 is provided with at least one first protruding structure 31a, and the second ring 32 is provided with at least one second protruding structure 32a, and a curved channel is formed between the first protruding structure 31a and the second protruding structure 32a. Optionally, the number of the first protruding structure 31a can be one or more, and the number of the second protruding structure 32a can be one or more. The first protruding structure 31a and the second protruding structure 32a are both annular protrusions. Along the plane passing through the axis of the base 21, the cross-sectional shape of the first protruding structure 31a and the second protruding structure 32a can be a square structure or other structures. In short, the first protruding structure 31a protrudes from the surface of the first ring 31, and the second protruding structure 32a protrudes from the surface of the second ring 32.

[0081] In this embodiment, the first protruding structure 31a and the second protruding structure 32a are used to directly form a curved channel, so that the first ring 31 and the second ring 32 are prevented from having too complicated structures, which is conducive to simplifying the structures of the first ring 31 and the second ring 32.

[0082] Of course, in other embodiments, the flow channel b may also be a curved channel of other shapes, and the flow channel b is not limited to being formed by the first protruding structure 31 a and the second protruding structure 32 a .

[0083] In an optional embodiment, reference Fig. 9 As shown, the first protrusion structure 31a and the second protrusion structure 32a are both one, the first protrusion structure 31a is arranged on the outer wall surface of the first ring 31, and the second protrusion structure 32a is arranged at the lower end of the second ring 32. In this way, the protective gas entering the flow channel b flows in the vertical upward direction, in the horizontal direction, and in the vertical upward direction in sequence.

[0084] In another embodiment, at least two first protruding structures 31a are arranged at intervals, and the second protruding structure 32a extends between two adjacent first protruding structures 31a. Optionally, any two adjacent first protruding structures 31a form a first groove, and the second protruding structures 32a correspond to the first grooves one by one, and each second protruding structure 32a extends into the corresponding first groove to form a curved channel.

[0085] Alternatively, refer to Fig.10As shown, at least two second protruding structures 32a are arranged at intervals, and the first protruding structure 31a extends between two adjacent second protruding structures 32a. Optionally, two adjacent second protruding structures 32a form a second groove, and the first protruding structure 31a corresponds to the second groove one by one, and each first protruding structure 31a extends into the corresponding second groove to form a curved channel.

[0086] With such arrangement, the protective gas entering the flow channel b flows in a vertically upward direction, in a horizontal direction, in a vertically downward direction, in a horizontal direction, and in a vertically upward direction in sequence.

[0087] With this embodiment, the number of the first protrusion structure 31a or the second protrusion structure 32a is increased, so that the bending degree of the flow channel b is increased, and the path of the gas flow through the flow channel b is further extended, thereby further increasing the flow resistance during the gas flow process, and more effectively preventing the process gas above the base 21 from passing through the flow channel b into the lower area of ​​the base 21, thereby effectively preventing the process gas from diffusing downward.

[0088] Optionally, refer to Figure 2 As shown, the semiconductor process equipment further includes an air inlet block 23, a chamber cover plate 24 and a shower plate 25, and the air inlet block 23, the chamber cover plate 24 and the shower plate 25 are respectively connected to the chamber body 20. The air inlet block 23 is provided with at least two air inlet holes 23a, and each air inlet hole 23a is used to introduce different types of process gases to achieve different process steps and processes. The process gas entering through the air inlet hole 23a is diffused in the space between the chamber cover plate 24 and the shower plate 25, and is further ejected to the base 21 through the shower hole of the shower plate 25.

[0089] Moreover, a narrow gap is formed between the spray plate 25 and the second ring 32. After the protective gas flowing into the area above the base 21 through the flow channel b merges with the process gas, it can flow to the annular area of ​​the chamber body 20 through the narrow gap. The chamber body 20 is also provided with an exhaust port connected to the annular area, and the gas in the annular area can be extracted through the exhaust port. In the scheme of this application, reference is made to Figure 2 As shown, the semiconductor process equipment further includes a driving mechanism 40, which is located outside the chamber body 20 and is connected to the support shaft 22. The driving mechanism 40 can drive the support shaft 22 to drive the base 21 and the first ring 31 to rise and fall, so as to adjust the flow area of ​​the curved channel. The driving mechanism 40 can be a driving component that can provide a linear driving force, such as a cylinder, an electric cylinder, a linear module, etc.

[0090] Optionally, the shell of the driving mechanism 40 can be connected to the chamber body 20 by welding, bonding, etc., the driving end of the driving mechanism 40 can be directly connected to the lower end of the support shaft 22 by welding, bonding, etc., or the driving end of the driving mechanism 40 can be indirectly connected to the lower end of the support shaft 22 through other components.

[0091] In this way, when the driving mechanism 40 drives the support shaft 22 to rise and fall relative to the chamber body 20, the support shaft 22 drives the base 21 and the first ring 31 to rise and fall relative to the second ring 32, so the width of the flow channel b formed by the first ring 31 and the second ring 32 changes, thereby adjusting its flow area.

[0092] It should be noted that the first ring 31 can only adjust the width of a partial channel in the flow channel b by lifting it relative to the second ring 32, and the plane where this partial channel is located intersects with the axis of the base 21. Optionally, the drive mechanism 40 can only adjust the width of the horizontal channel portion in the flow channel b.

[0093] By adopting this embodiment, the driving mechanism 40 can be adjusted as needed to adjust the flow area of ​​the flow channel b, thereby adjusting the flow resistance of the flow channel b, thereby achieving the adjustment of the gas flow rate and the blocking effect.

[0094] Specifically, when a large amount of process gas is introduced, the process pressure is small, and the driving mechanism 40 drives the support shaft 22 to drive the base 21 and the first ring 31 to descend, the flow area of ​​the flow channel b increases, and the flow resistance decreases, ensuring that the blocking effect remains constant; similarly, when a small amount of process gas is introduced, the process pressure is large, and the driving mechanism 40 drives the support shaft 22 to drive the base 21 and the first ring 31 to rise, the flow area of ​​the flow channel b decreases, the flow resistance increases, and the blocking effect remains constant. Therefore, when different amounts of process gas are introduced, the driving mechanism 400 is adjusted to adjust the flow area of ​​the flow channel b as needed, which can ensure that the gas flow rate and the blocking effect remain constant.

[0095] The embodiments of the present application are described above in conjunction with the accompanying drawings, but the present application is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the guidance of the present application, ordinary technicians in this field can also make many forms without departing from the purpose of the present application and the scope of protection of the claims, all of which are within the protection of the present application.

Claims

1. An air intake assembly of a semiconductor process equipment, the semiconductor process equipment comprising a chamber body (20), a base (21) and a support shaft (22), the base (21) being arranged in the chamber body (20), the support shaft (22) penetrating the chamber body (20) and connected to the base (21), the air intake assembly (10) being used to introduce gas into the chamber body (20), characterized in that: The air intake assembly (10) comprises: An adapter ring (100), the adapter ring (100) being used to connect the support shaft (22), the adapter ring (100) being provided with a protective gas channel (110) for introducing a protective gas, and the adapter ring (100) being provided with a plurality of first gas outlet holes (120) spaced apart along its circumference, the protective gas channel (110) being respectively connected to each of the first gas outlet holes (120); A guide ring (200), the guide ring (200) being used to be sleeved on the outside of the support shaft (22), and at least a portion of the guide ring (200) being located above the adapter ring (100), an airflow gap (a) for the protective gas to flow is formed between the guide ring (200) and the support shaft (22), and the airflow gap (a) is communicated with each of the first air outlet holes (120), respectively. The flow area of ​​the airflow gap (a) far away from the first air outlet (120) is smaller than the flow area of ​​the airflow gap (a) close to the first air outlet (120).

2. The air intake assembly according to claim 1, characterized in that: The inner wall surface of the guide ring (200) comprises a guide surface (200a) located above the adapter ring (100), and along the gas outlet direction of the first gas outlet hole (120), the distance from the guide surface (200a) to the axis of the guide ring (200) decreases.

3. The air intake assembly according to claim 1, characterized in that: The protective gas channel (110) comprises at least two levels of first gas distribution channels, each level of the first gas distribution channels is provided with a first gas inlet end and at least two first gas outlet ends, and in two adjacent levels of the first gas distribution channels, the first gas outlet end of the first gas distribution channel of the upper level is connected to the first gas inlet end of the first gas distribution channel of the lower level, The air intake assembly (10) further comprises a first air intake pipe (300), the first air intake pipe (300) being connected to the adapter ring (100), the first air intake end of the first-stage first air distribution channel being in communication with the first air intake pipe (300), and the first air outlet end of the last-stage first air distribution channel being in communication with each of the first air outlet holes (120).

4. The air intake assembly according to claim 3, characterized in that: Each level of the first gas distribution channel is provided with a first gas inlet end and two first gas outlet ends. The first gas distribution channels of each level extend along the circumference of the adapter ring (100), and in the circumference of the adapter ring (100), the distance between the first gas inlet end and the two first gas outlet ends of the same first gas distribution channel is equal.

5. The air intake assembly according to any one of claims 1 to 4, characterized in that: The air intake assembly (10) further comprises an air separator (400), the air separator (400) being an annular structure, the air separator (400) being sleeved on the guide ring (200), and the air separator (400) being connected to the chamber body (20). The gas separator (400) is provided with a cleaning gas channel (410) for introducing cleaning gas, and the gas separator (400) is provided with a plurality of second gas outlet holes (420) at intervals along its circumference, and the cleaning gas channel (410) is respectively connected to each of the second gas outlet holes (420).

6. The air intake assembly according to claim 5, characterized in that The gas outlet directions of each of the second gas outlet holes (420) intersect with the first direction (A), so that the cleaning gas flowing out through the cleaning gas channel (410) and each of the second gas outlet holes (420) forms a rotating gas flow. The first direction (A) is perpendicular to the axis of the gas separation member (400), and the first direction (A) is the direction from the center of the inlet end of the second gas outlet hole (420) to the axis of the gas separation member (400).

7. The air intake assembly according to claim 5, characterized in that: The cleaning gas channel (410) comprises at least two levels of second gas distribution channels, each level of the second gas distribution channels is provided with a second gas inlet end and at least two second gas outlet ends, and in two adjacent levels of the second gas distribution channels, the second gas outlet end of the upper level of the second gas distribution channel is connected to the second gas inlet end of the lower level of the second gas distribution channel, The air intake assembly (10) further comprises a second air intake pipe (500), the second air intake pipe (500) being connected to the air distributor (400), the second air intake end of the first-stage second air distributor channel being connected to the second air intake pipe (500), and the second air outlet end of the last-stage second air distributor channel being connected to each of the second air outlet holes (420).

8. The air intake assembly according to claim 7, characterized in that: Each stage of the second gas distribution channel is provided with a second gas inlet end and two second gas outlet ends, and each stage of the second gas distribution channel extends along the circumference of the gas distribution component (400), and in the circumference of the gas distribution component (400), the distance between the second gas inlet end and the two second gas outlet ends of the same second gas distribution channel is equal.

9. The air intake assembly according to claim 7, characterized in that: The second gas outlet ends of the second gas distribution channels of the last stage are respectively connected to at least two second gas outlet holes (420), and the gas outlet directions of the at least two second gas outlet holes (420) connected to the same second gas outlet end are different.

10. The air intake assembly according to claim 5, characterized in that The gas separation component (400) comprises a bottom plate (401), a gas separation plate (402) and a gas separation cover plate (403); the bottom plate (401) is connected to the gas separation plate (402); the bottom plate (401) and the gas separation plate (402) together form the protective gas channel (110); and the gas separation cover plate (403) is arranged on a side of the gas separation plate (402) facing away from the bottom plate (401). The outer wall surface of the guide ring (200) is provided with a raised portion (210), and the gas separation cover plate (403), the raised portion (210) and the gas separation plate (402) are sequentially limited and matched to ensure that the gas separation component (400) and the guide ring (200) are relatively fixed.

11. A semiconductor process equipment, characterized in that: The invention comprises a chamber body (20), a base (21), a support shaft (22), and an air intake assembly (10) according to any one of claims 1 to 10, wherein the base (21) is arranged in the chamber body (20), the support shaft (22) passes through the chamber body (20) and is connected to the base (21), and the air intake assembly (10) is sleeved on the outside of the support shaft (22).

12. The semiconductor process equipment according to claim 11, characterized in that: The semiconductor process equipment further comprises a first sleeve ring (31) and a second sleeve ring (32), wherein the first sleeve ring (31) is sleeved on the outside of the base (21), and the first sleeve ring (31) is connected to the edge of the base (21), the second sleeve ring (32) is connected to the chamber body (20), and a flow channel (b) is formed between the first sleeve ring (31) and the second sleeve ring (32), the flow channel (b) is a bent channel, and the airflow gap (a) is connected to the flow channel (b).

13. The semiconductor process equipment according to claim 12, characterized in that: The first collar (31) is provided with at least one first protruding structure (31a), and the second collar (32) is provided with at least one second protruding structure (32a), and the bent channel is formed between the first protruding structure (31a) and the second protruding structure (32a).

14. The semiconductor process equipment according to claim 13, characterized in that: At least two of the first protruding structures (31a) are arranged at intervals, and the second protruding structure (32a) extends between two adjacent first protruding structures (31a); Alternatively, at least two of the second protruding structures (32a) are arranged at intervals, and the first protruding structure (31a) extends between two adjacent second protruding structures (32a).

15. The semiconductor process equipment according to claim 12, characterized in that: The semiconductor process equipment further comprises a driving mechanism (40), wherein the driving mechanism (40) is connected to the support shaft (22), and the driving mechanism (40) can drive the support shaft (22) to drive the base (21) and the first ring (31) to rise and fall, so as to adjust the flow area of ​​the curved channel.

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