Chemical vapor deposition process and equipment suitable for plate-shaped workpiece

Abstract

The invention is suitable for the technical field of chemical vapor deposition, and provides a chemical vapor deposition process and equipment suitable for a plate-shaped workpiece. The chemical vapor deposition technology suitable for the plate-shaped workpiece comprises the following steps that the plate-shaped workpiece is placed on a rotary material table; airflow channels are formed in the inner sides of the two surfaces of the plate-shaped workpiece respectively, and air enters the airflow channels from the side edges; the exhaust holes are formed in the exhaust ends of the airflow channels, so that the exhaust holes and the plate-shaped workpiece are located on the same plane, airflow parallel to the airflow channels converges towards the two surfaces, the compactness of a coating formed by the heterogeneous surface reaction of the airflow along the surface of the workpiece and the base body bonding performance are improved, and the service life of the coating is prolonged. And therefore, the problem of low product yield of the surface coating of the plate-shaped workpiece matrix is solved.

Description

Technical Field

[0001] The invention belongs to the technical field of chemical vapor deposition, and in particular relates to a chemical vapor deposition process and equipment suitable for plate-shaped workpieces. Background Art

[0002] The chemical vapor deposition process on the surface of plate-like workpieces is widely used in the aerospace and semiconductor fields, such as the anti-oxidation coating on the surface of the hot end components of aircraft engines (ceramic coatings such as PyC / SiC) and the surface coating of the wafer carrier in the epitaxial process of the third-generation semiconductor SiC substrate (SiC / TaC and other coatings), as well as the surface coating of the electrostatic chuck used in the core process links such as etching, PVD, and CVD in the integrated circuit manufacturing process (SiC / TaC and other coatings).

[0003] Plate-shaped workpieces usually include circular plates, square plates, special-shaped plates and other structures, and their shape characteristics are: 1. The length and width (or diameter) are much larger than the thickness; 2. The horizontal surface is closed. Usually, the precursor gas has poor diffusion due to its large relative molecular weight, and the uneven gas flow field will lead to uneven coating thickness, affecting the quality of the coating. Therefore, the above objective reasons have led to the low product yield of the existing plate-shaped workpiece substrate surface coating. Summary of the invention

[0004] The purpose of the embodiments of the present invention is to provide a chemical vapor deposition process suitable for a plate-like workpiece, aiming to solve the problem of low product yield of a coating on the surface of a plate-like workpiece substrate.

[0005] The embodiment of the present invention is implemented as follows: a chemical vapor deposition process applicable to a plate-shaped workpiece, the chemical vapor deposition process applicable to a plate-shaped workpiece comprising the following steps:

[0006] Place the plate-shaped workpiece on the rotating table;

[0007] Air flow channels are formed on the inner sides of the two surfaces of the plate-like workpiece, respectively, and air is introduced into the air flow channels from the sides;

[0008] An exhaust hole is arranged at the exhaust end of the airflow channel, so that the exhaust hole and the plate-shaped workpiece are on the same plane, so that the airflow parallel to the airflow channel converges to the two surfaces.

[0009] Furthermore, the air intake directions of the two surfaces are not parallel, and the two direction lines form skew lines. The intersection of the two skew lines translated on the same plane falls on the rotation axis of the rotating material table, and the exhaust direction of the exhaust hole bisects the angle formed by the two skew lines.

[0010] Further, the chemical vapor deposition process applicable to the plate-shaped workpiece is:

[0011] At least two plate-shaped workpieces are arranged on the rotating material table in parallel and at intervals;

[0012] Two adjacent plate-like workpieces form the airflow channel, and multiple rows of air intake pipes are arranged on the sides of the plate-like workpieces, so that each row of air intake pipes alternately intakes air into the airflow channel;

[0013] An exhaust pipe is arranged at the exhaust end of the airflow channel, and the exhaust pipe is provided with the exhaust holes having the same number as the plate-like workpieces. The exhaust holes correspond to the plate-like workpieces one by one and are all located on the same plane.

[0014] Furthermore, the air intake direction of each row of the air intake pipes is in the same plane, all planes intersect on the rotation axis of the rotating material table, and are symmetrical relative to the plane where the exhaust direction of the exhaust pipes is located.

[0015] Another object of an embodiment of the present invention is a chemical vapor deposition device suitable for a plate-shaped workpiece, the chemical vapor deposition device suitable for a plate-shaped workpiece comprising:

[0016] Sedimentation chamber;

[0017] A rotating material table is arranged inside the deposition chamber and is used to place a plate-like workpiece so that air flow channels are formed on the inner sides of two surfaces of the plate-like workpiece;

[0018] An air inlet pipe passes through the deposition chamber and is disposed on a side of the plate-like workpiece, and is used to inlet air into the air flow channel from the side;

[0019] An exhaust pipe is provided with an exhaust hole at one end and leads out of the deposition chamber at the other end; the exhaust hole is located at the exhaust end of the air flow channel and is on the same plane as the plate-shaped workpiece.

[0020] Furthermore, the air intake directions of the two surfaces are not parallel, and the two direction lines form skew lines. The intersection of the two skew lines translated on the same plane falls on the rotation axis of the rotating material table, and the exhaust direction of the exhaust hole bisects the angle formed by the two skew lines.

[0021] Furthermore, the rotating material table is provided with a loading tooling that can place at least two plate-like workpieces in parallel, and the two adjacent plate-like workpieces form the air flow channel. A plurality of rows of air intake pipes are arranged on the sides of the plate-like workpieces so that each row of the air intake pipes alternately intakes air into the air flow channel; the exhaust pipe is provided with exhaust holes with the same number as the plate-like workpieces, and the exhaust holes correspond one-to-one to the plate-like workpieces and are all on the same plane.

[0022] Furthermore, the air intake direction of each row of the air intake pipes is in the same plane, all planes intersect on the rotation axis of the rotating material table, and are symmetrical relative to the plane where the exhaust direction of the exhaust pipes is located.

[0023] Furthermore, the exhaust pipe is a rectangular long pipe, and the exhaust hole is in a square shape.

[0024] Furthermore, the chemical vapor deposition equipment suitable for plate-shaped workpieces also includes:

[0025] A heating module is arranged at the periphery of the deposition chamber;

[0026] A thermal insulation layer wraps the heating module and the deposition chamber;

[0027] A furnace shell, wrapping the thermal insulation layer;

[0028] The air inlet pipe and the exhaust pipe pass through the heating module, the thermal insulation layer and the furnace shell in sequence.

[0029] The chemical vapor deposition process suitable for plate-like workpieces provided in the embodiment of the present invention comprises a rotating table that carries the plate-like workpiece in uniform rotational motion, so that uniform deposition is achieved on each surface of the plate-like workpiece; air flow is introduced into the inner sides of the two surfaces of the plate-like workpiece, and the air flow flows in the direction of the exhaust holes, thereby converging and closing the air intake on the two surfaces of the plate-like workpiece, thereby improving the density and substrate bonding of the coating formed by the heterogeneous surface reaction of the air flow along the surface of the workpiece, thereby solving the problem of low product yield of the coating on the surface of the substrate of the plate-like workpiece. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 The chemical vapor deposition process flow chart applicable to a plate-shaped workpiece in the first embodiment;

[0031] Figure 2 It is a schematic diagram of the gas flow direction of the chemical vapor deposition process in the first embodiment;

[0032] Figure 3 is a transverse cross-sectional view of a chemical vapor deposition apparatus suitable for a plate-shaped workpiece in an embodiment of the present invention;

[0033] Figure 4 is a process flow chart of chemical vapor deposition applicable to a plate-shaped workpiece in a second embodiment;

[0034] Figure 5 A schematic diagram of the gas flow direction of a chemical vapor deposition process of a multi-layer plate-shaped workpiece in the second embodiment;

[0035] Figure 6 is a structural diagram of an exhaust pipe in a third embodiment;

[0036] Figure 7 is a structural diagram of a chemical vapor deposition device suitable for a plate-shaped workpiece in a third embodiment;

[0037] 100, deposition chamber; 200, rotating material table; 210, loading tooling; 300, air inlet pipe; 400, exhaust pipe; 410, exhaust hole; 500, plate-shaped workpiece; 600, heating module; 700, insulation layer; 800, furnace shell. DETAILED DESCRIPTION

[0038] In order to make the purpose, technical solution and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0039] In the first embodiment, if Figure 1 and 2 As shown, a chemical vapor deposition process suitable for a plate-shaped workpiece is proposed, and the chemical vapor deposition process suitable for a plate-shaped workpiece includes steps S102 to S106:

[0040] Step S102 , placing the plate-shaped workpiece 500 on the rotating table 200 .

[0041] In this embodiment, a loading fixture 210 is provided on the rotating material table 200, which can fix the plate-like workpiece 500. This embodiment does not limit the number of plate-like workpieces, which can be one plate-like workpiece or several plate-like workpieces; if there are several plate-like workpieces, the second embodiment will provide a detailed description. The plate-like workpiece can be placed horizontally, tilted, or vertically. As long as air flow channels are formed on both sides of the plate-like workpiece and the air flow is guided to converge and close on the two surfaces, the technical solution of this embodiment can be realized. There is no limitation on the placement inclination of the plate-like workpiece, and this embodiment takes a horizontally placed plate-like workpiece as an example. Correspondingly, the rotation axis of the rotating material table 200 is located at the center of the plate-like workpiece 500 and is perpendicular to the plate-like workpiece 500. The rotating material table 200 rotates the plate-like workpiece 500 at a uniform speed, so that each surface of the plate-like workpiece 500 is evenly deposited.

[0042] Step S104 , forming air flow channels on the inner sides of the two surfaces of the plate-like workpiece 500 , respectively, and letting air flow into the air flow channels from the sides.

[0043] In this embodiment, if Figure 2 As shown, the "air flow channel" refers to the flow path of the reaction gas on the surface of the plate-like workpiece, which is close to the two surfaces of the plate-like workpiece; this means that the "air flow channel" is not necessarily a space that is closed on all sides, but rather, as long as the reaction gas can be guided close to the surface of the plate-like workpiece and converge and close, the "air flow channel" can be formed.

[0044] Step S106, an exhaust hole 410 is provided at the exhaust end of the airflow channel, so that the exhaust hole 410 and the plate-like workpiece 500 are on the same plane, so that the airflow parallel to the airflow channel converges to the two surfaces.

[0045] In this embodiment, chemical vapor deposition is carried out in a vacuum environment with a temperature of 1000°C and an air pressure of 1000-10000Pa. In addition to the high requirements for the uniformity of the temperature and pressure in the working area, the chemical vapor deposition process also has high requirements for the uniformity of the airflow field, the workpiece loading method, and the air intake and exhaust structure. Usually, the precursor gas has a large relative molecular weight and usually exhibits poor diffusivity, and the unevenness of the airflow field will lead to uneven coating thickness, thereby affecting the quality of the coating. In addition, the air intake and exhaust structure of the equipment will directly affect the path and flow rate of the airflow. Usually, the airflow flows along the surface of the workpiece, and the exhaust is unobstructed, which is more likely to cause heterogeneous surface reactions and form a coating with good density and substrate bonding. Therefore, in this embodiment, the airflow is introduced into the inner side of the two surfaces of the plate-like workpiece 500, and the airflow flows in the direction of the exhaust hole 410, so that the air intake on the two surfaces of the plate-like workpiece 500 is converged and closed, which improves the density and substrate bonding of the coating formed by the heterogeneous surface reaction of the airflow along the surface of the workpiece, thereby solving the problem of low product yield of the substrate surface coating of the plate-like workpiece.

[0046] In the first embodiment, the airflow direction of the air intake pipe 300 is further optimized. The air intake directions of the two surfaces are not parallel, and the two direction lines form skew lines. The intersection point formed by the translation of the two skew lines on the same plane falls on the rotation axis of the rotating material table 200, and the exhaust direction of the exhaust hole 410 bisects the angle formed by the two skew lines.

[0047] In this optimization scheme, if Figure 2 and Figure 3 As shown, the air inlet pipes 300 are divided into two rows, A and B. The air inlet pipe A is used to inlet air on the lower surface of the plate-like workpiece 500, and the air inlet pipe B is used to inlet air on the upper surface of the plate-like workpiece 500. The air inlet pipes 300 on the two surfaces are not arranged on the same vertical plane, and the staggered positions can ensure that the airflow on the upper and lower surfaces of the plate-like workpiece 500 is equal.

[0048] In the second embodiment, if Figure 4 and 5 As shown, a chemical vapor deposition process suitable for plate-like workpieces is provided. This embodiment is improved on the basis of the first embodiment and can be suitable for processing multiple plate-like workpieces at the same time. The chemical vapor deposition process suitable for plate-like workpieces includes steps S202 to S206:

[0049] Step S202 , placing at least two plate-shaped workpieces 500 on the rotating table 200 in parallel and at intervals.

[0050] Step S204 , two adjacent plate-like workpieces 500 form the airflow channel, and multiple rows of air intake pipes 300 are arranged on the side of the plate-like workpiece 500 , so that each row of the air intake pipes 300 alternately intakes air into the airflow channel.

[0051] Step S202 , an exhaust pipe 400 is provided at the exhaust end of the airflow channel, and the exhaust pipe 400 is provided with the exhaust holes 410 having the same number as the plate-like workpieces 500 . The exhaust holes 410 correspond to the plate-like workpieces 500 one by one and are all on the same plane.

[0052] At present, the equipment for chemical vapor deposition on plate-like parts usually adopts the traditional structure of bottom air intake and top exhaust, taking into account the natural upward rising force caused by the change in density of the gas at high temperature. Taking the wafer carrier in the semiconductor industry as an example, the outer diameter is relatively large (about φ700mm). In order to ensure the deposition quality of the upper and lower surfaces, the amount of loading is usually one piece per furnace, and two furnaces are required for deposition, with one "windward" surface deposited in each furnace. The above-mentioned furnace loading process method leads to low production efficiency and high cost, and it is easy to cause contamination of the workpiece during the second loading of the furnace, reducing the cleanliness (purity) of the product, especially in the semiconductor application industry, which has a huge impact. In addition, the superposition effect of the two deposition processes will directly affect the uniformity of the coating thickness and the crystal quality of the coating.

[0053] In this embodiment, if Figure 5 As shown, at least two plate-shaped workpieces 500 are loaded, and the loading amount depends on the height of the working area of ​​the equipment and the number of air inlets arranged in the vertical direction. Figure 3 and 5 As shown, the air intake pipe 300 is divided into two columns, A and B. The air intake pipes in column A include A1 to A5, and the air intake pipes in column B include B1 to B5. The two columns of air intake pipes are arranged alternately. The air intake pipes 300 of this embodiment are not limited to 2 columns, and the number of air intake pipes in each column is not limited to 5. The number of columns and the number of the columns are determined according to the actual production situation. The air intake pipes 300 located on the side of the plate-like workpiece 500 are arranged in two columns (or multiple columns), and each column of the air intake pipes 300 alternately intakes air into the air flow channel. Compared with the single-column arrangement, the furnace loading capacity can be doubled, and the production efficiency of the chemical vapor deposition process of the plate-like workpiece can be improved. In addition, the side exhaust pipe 400 is a vertical structure, which is arranged on the other side. On the exhaust pipe 400, an exhaust hole 410 is opened at the position flush with each workpiece, and the air intake on the upper and lower surfaces of the workpiece is converged and closed, which just improves the airflow along the surface of the workpiece to react with the surface in a different phase to form a coating with good density and substrate bonding.

[0054] In the second embodiment, the arrangement of multiple rows of intake pipes 300 is further optimized. The intake direction of each row of intake pipes 300 is in the same plane, all planes intersect on the rotation axis of the rotating material table 200, and are symmetrical with respect to the plane where the exhaust direction of the exhaust pipes 400 is located.

[0055] In this optimization scheme, if Figure 3 As shown, the intersection of the air intake direction falls on the rotation axis of the rotating material table 200, which can make the airflow more uniform.

[0056] In the second embodiment, the air intake and exhaust are further optimized. According to the trend that the bottom opening is larger than the top opening, the spacing between the workpieces and the opening size of the exhaust pipe 400 are appropriately adjusted in combination with the simulation results to ensure the best airflow field effect.

[0057] In a third embodiment, if Figure 2 and 3 As shown, a chemical vapor deposition device suitable for plate-shaped workpieces is proposed. The device of this embodiment can perform the chemical vapor deposition process suitable for plate-shaped workpieces described in the first embodiment and the second embodiment. The chemical vapor deposition device suitable for plate-shaped workpieces includes:

[0058] Deposition chamber 100;

[0059] The rotating material table 200 is arranged inside the deposition chamber 100 and is used to place the plate-shaped workpiece 500 so that air flow channels are formed on the inner sides of the two surfaces of the plate-shaped workpiece 500;

[0060] An air inlet pipe 300 passes through the deposition chamber 100 and is disposed on the side of the plate-like workpiece 500 to supply air to the air flow channel from the side;

[0061] The exhaust pipe 400 is provided with an exhaust hole 410 at one end and leads out of the deposition chamber 100 at the other end; the exhaust hole 410 is located at the exhaust end of the air flow channel and is on the same plane as the plate-like workpiece 500 .

[0062] In this embodiment, the deposition chamber 100 provides a high-temperature vacuum environment for chemical vapor deposition; a loading fixture 210 is provided on the rotating material table 200 for carrying the plate-like workpiece 500. Airflow is introduced into the inner sides of the two surfaces of the plate-like workpiece 500, and the airflow flows in the direction of the exhaust hole 410, converging and closing the air intake on the two surfaces of the plate-like workpiece 500, thereby improving the density and substrate bonding of the coating formed by the heterogeneous surface reaction of the airflow along the surface of the workpiece, thereby solving the problem of low product yield of the coating on the surface of the plate-like workpiece substrate.

[0063] In a third embodiment, if Figure 3As shown, the structure of the air intake pipe 300 is further optimized. The air intake directions of the two surfaces are not parallel, and the two direction lines form skew lines. The intersection point formed by the translation of the two skew lines on the same plane falls on the rotation axis of the rotating material table 200, and the exhaust direction of the exhaust hole 410 bisects the angle formed by the two skew lines.

[0064] In a third embodiment, if Figure 3 and 5 As shown, the structures of the loading fixture 210, the air intake pipe 300 and the exhaust pipe 400 are further optimized. The rotating material table 200 is provided with a loading fixture 210 that can place at least two plate-like workpieces 500 in parallel. Two adjacent plate-like workpieces 500 form the air flow channel. Multiple rows of air intake pipes 300 are arranged on the sides of the plate-like workpieces 500, so that each row of the air intake pipes 300 alternately intakes air into the air flow channel; the exhaust pipe 400 is provided with exhaust holes 410 that are the same in number as the plate-like workpieces 500, and the exhaust holes 410 correspond one-to-one with the plate-like workpieces 500 and are all in the same plane. The air intake direction of each row of the air intake pipes 300 is in the same plane, and all planes intersect on the rotation axis of the rotating material table 200, and are symmetrical with respect to the plane where the exhaust direction of the exhaust pipe 400 is located. As shown Figure 6 As shown, the exhaust pipe 400 is a rectangular long tube, and the exhaust hole 410 is in a square shape.

[0065] In this optimization scheme, multiple rows of air inlet pipes 300 and multiple exhaust holes 410 are provided, which are suitable for multiple plate-shaped workpieces 500, increase the furnace loading capacity, and can achieve full surface deposition of workpieces in a single furnace, greatly improving production efficiency. In addition, by improving the air inlet and exhaust structure of the equipment and assisting with simulation technology, the uniformity of the airflow field is improved, the path and flow rate of the airflow are improved, and the product yield is greatly improved.

[0066] In a third embodiment, if Figure 3 and 7 As shown, the chemical vapor deposition equipment suitable for plate-shaped workpieces is further optimized. The chemical vapor deposition equipment suitable for plate-shaped workpieces also includes:

[0067] A heating module 600 is disposed on the periphery of the deposition chamber 100;

[0068] The heat preservation layer 700 wraps the heating module 600 and the deposition chamber 100;

[0069] A furnace shell 800, wrapping the thermal insulation layer 700;

[0070] The air inlet pipe 300 and the exhaust pipe 400 pass through the heating module 600 , the heat insulation layer 700 and the furnace shell 800 in sequence.

[0071] In this optimization scheme, the heating module 600 provides heat for the deposition chamber 100, the insulation layer 700 reduces heat loss, and the furnace shell 800 plays a protective role.

[0072] The working principle of the third embodiment is: the plate-like workpieces 500 are installed on the loading fixture 210 at equal intervals and in parallel, and multiple rows of air intake pipes 300 are used to intake air from the side. The airflow flows along the surface of the plate-like workpiece 500. Under the guidance of the exhaust holes 410, the airflow converges and closes toward the two sides of the plate-like workpiece 500, and finally passes through the exhaust pipes 400 to the outside.

[0073] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0074] The above-mentioned embodiments only express several implementation methods of the present invention, and the description thereof is relatively specific and detailed, but it cannot be understood as limiting the scope of the patent of the present invention. It should be pointed out that, for ordinary technicians in this field, several variations and improvements can be made without departing from the concept of the present invention, which all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention shall be subject to the attached claims.

Claims

1. A chemical vapor deposition process suitable for plate-shaped workpieces, characterized in that: The chemical vapor deposition process applicable to a plate-shaped workpiece comprises the following steps: Place the plate-shaped workpiece on the rotating table; Air flow channels are formed on the inner sides of the two surfaces of the plate-like workpiece, respectively, and air is introduced into the air flow channels from the sides; An exhaust hole is arranged at the exhaust end of the airflow channel, so that the exhaust hole and the plate-shaped workpiece are on the same plane, so that the airflow parallel to the airflow channel converges to the two surfaces.

2. The chemical vapor deposition process for plate-shaped workpieces according to claim 1, characterized in that: The air intake directions of the two surfaces are not parallel, and the two direction lines form skew lines. The intersection of the two skew lines translated on the same plane falls on the rotation axis of the rotating material table, and the exhaust direction of the exhaust hole bisects the angle formed by the two skew lines.

3. The chemical vapor deposition process for plate-shaped workpieces according to claim 1, characterized in that: The chemical vapor deposition process suitable for plate-shaped workpieces is: At least two plate-shaped workpieces are arranged on the rotating material table in parallel and at intervals; Two adjacent plate-like workpieces form the airflow channel, and multiple rows of air intake pipes are arranged on the sides of the plate-like workpieces, so that each row of air intake pipes alternately intakes air into the airflow channel; An exhaust pipe is arranged at the exhaust end of the airflow channel, and the exhaust pipe is provided with the exhaust holes having the same number as the plate-like workpieces. The exhaust holes correspond to the plate-like workpieces one by one and are all located on the same plane.

4. The chemical vapor deposition process for plate-shaped workpieces according to claim 3, characterized in that: The air intake direction of each row of the air intake pipes is in the same plane, all the planes intersect on the rotation axis of the rotating material table, and are symmetrical relative to the plane where the exhaust direction of the exhaust pipes is located.

5. A chemical vapor deposition device suitable for plate-shaped workpieces, characterized in that: The chemical vapor deposition equipment suitable for plate-shaped workpieces comprises: Sedimentation chamber; A rotating material table is arranged inside the deposition chamber and is used to place a plate-like workpiece so that air flow channels are formed on the inner sides of two surfaces of the plate-like workpiece; An air inlet pipe passes through the deposition chamber and is disposed on a side of the plate-like workpiece, and is used to inlet air into the air flow channel from the side; An exhaust pipe is provided with an exhaust hole at one end and leads out of the deposition chamber at the other end; the exhaust hole is located at the exhaust end of the air flow channel and is on the same plane as the plate-shaped workpiece.

6. The chemical vapor deposition equipment suitable for plate-shaped workpieces according to claim 5, characterized in that: The air intake directions of the two surfaces are not parallel, and the two direction lines form skew lines. The intersection of the two skew lines translated on the same plane falls on the rotation axis of the rotating material table, and the exhaust direction of the exhaust hole bisects the angle formed by the two skew lines.

7. The chemical vapor deposition equipment suitable for plate-shaped workpieces according to claim 5, characterized in that: The rotating material table is provided with a loading tooling that can place at least two plate-like workpieces in parallel, and the two adjacent plate-like workpieces form the air flow channel. Multiple rows of air intake pipes are arranged on the sides of the plate-like workpieces, so that each row of the air intake pipes alternately intakes air into the air flow channel; the exhaust pipe is provided with exhaust holes with the same number as the plate-like workpieces, and the exhaust holes correspond to the plate-like workpieces one by one and are all on the same plane.

8. The chemical vapor deposition equipment suitable for plate-shaped workpieces according to claim 7, characterized in that: The air intake direction of each row of the air intake pipes is in the same plane, all the planes intersect on the rotation axis of the rotating material table, and are symmetrical relative to the plane where the exhaust direction of the exhaust pipes is located.

9. The chemical vapor deposition device suitable for plate-shaped workpieces according to claim 5, characterized in that: The exhaust pipe is a rectangular long pipe, and the exhaust hole is in a square shape.

10. The chemical vapor deposition device suitable for plate-shaped workpieces according to any one of claims 5 to 9, characterized in that: The chemical vapor deposition equipment suitable for plate-shaped workpieces also includes: A heating module is arranged at the periphery of the deposition chamber; A thermal insulation layer wraps the heating module and the deposition chamber; A furnace shell, wrapping the thermal insulation layer; The air inlet pipe and the exhaust pipe pass through the heating module, the thermal insulation layer and the furnace shell in sequence.

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