Chemical vapor deposition device

Abstract

The invention provides a chemical vapor deposition device which is used for depositing a thin film on a substrate, the chemical vapor deposition device comprises a fixed seat, a plurality of supporting blocks distributed on the fixed seat and a driving mechanism, each supporting block is provided with a supporting surface, and the driving mechanism is used for driving each supporting block to move respectively so as to adjust parameters of each supporting block respectively. The supporting surfaces are combined to form a supporting shape and are used for jointly supporting the substrate. According to the chemical vapor deposition device, in the deposition process, the supporting shape of each supporting block can be adjusted through the driving mechanism according to the actual deposition film thickness of the substrate, so that the uniformity and consistency of the deposition thickness of each part of the substrate are improved.

Description

Technical Field

[0001] The present application belongs to the technical field of chemical vapor deposition, and more specifically, relates to a chemical vapor deposition device. Background Art

[0002] Chemical vapor deposition (CVD) is a vapor growth method for preparing thin film materials. It is a process technology that deposits a solid thin film on the surface of the substrate by means of a spatial gas phase chemical reaction by passing one or more compounds or simple gases containing the elements constituting the thin film into a reaction chamber where a substrate is placed. The reaction mechanism of chemical vapor deposition is as follows: the reaction gas is introduced into the reactor, and dissociates under the action of heat energy, electrical energy or light energy to become highly active ions or ion clusters (plasma). The ions or ion clusters diffuse to the surface of the solid substrate, undergo chemical reactions to generate solid products, and are deposited on the surface of the substrate. However, the thickness uniformity of chemical vapor deposition films is currently poor. Summary of the invention

[0003] The purpose of the embodiments of the present application is to provide a chemical vapor deposition device to solve the technical problem of poor thickness uniformity of chemical vapor deposition films existing in the prior art.

[0004] To achieve the above-mentioned purpose, the technical solution adopted in the present application is: to provide a chemical vapor deposition device for depositing a thin film on a substrate, the chemical vapor deposition device comprising a fixed seat, a plurality of support blocks distributed on the fixed seat and a driving mechanism, the support block having a support surface, the driving mechanism being used to drive each of the support blocks to move separately, so as to adjust the parameters of each of the support blocks separately, so that each of the support surfaces is combined to form a support shape, and each of the support surfaces is used to jointly support the substrate.

[0005] In some embodiments, the parameters of the support block include at least one of the position of the support block and the angle of the support block, and the support shape includes at least one of a plane, a concave surface, and a convex surface.

[0006] Preferably,

[0007] When the support shape formed by the combination of the support surfaces is a plane, the support surface is a plane;

[0008] When the supporting shape formed by the combination of the supporting surfaces is a concave surface, the supporting surface is a plane, an arc surface or a curved surface;

[0009] When the supporting shape formed by the combination of the supporting surfaces is a convex surface, the supporting surface is a plane, an arc surface or a curved surface.

[0010] In some embodiments, the movement of the support block includes rotation;

[0011] Alternatively, the movement of the support block includes rotation and lifting movement.

[0012] In some embodiments, the driving mechanism includes a plurality of driving components, one of which corresponds to each of the supporting blocks, and the driving component is used to drive the supporting blocks to move;

[0013] Alternatively, the driving mechanism includes a plurality of driving components, one driving component is provided for each group of the support blocks, the driving component is used to drive the support blocks in the same group to move separately, and each group of the support blocks includes at least two support blocks.

[0014] In some embodiments, the driving assembly includes a rotary driving member, a reduction structure installed at an output end of the rotary driving member, and a connecting rod connected to the output end of the reduction structure, wherein the connecting rod is hinged to the support block.

[0015] In some embodiments, the chemical vapor deposition device further includes a mask plate, a distance sensor and a host, wherein the mask plate is spaced apart from the substrate, the distance sensor is used to detect the distance information between the mask plate and the substrate and feed it back to the host, and the host controls the driving mechanism according to the distance information to drive each of the supporting blocks to move respectively.

[0016] Preferably, the edge of the fixing seat is provided with support pins for supporting the mask plate;

[0017] Preferably, a shadow frame for crimping the mask plate is provided above the mask plate;

[0018] Preferably, the chemical vapor deposition device further comprises a reaction chamber, a diffusion plate for diffusing the reaction gas is disposed on the top of the reaction chamber, and an electric field radio frequency module is also disposed in the reaction chamber.

[0019] In some embodiments, the chemical vapor deposition device further includes a thickness detection structure for detecting the thickness of the film on the substrate and feeding back to the host. The host controls the driving mechanism according to the distance information and the thickness information to drive each of the supporting blocks to move separately.

[0020] In some embodiments, the chemical vapor deposition apparatus includes a plurality of distance sensors, each of which is used to respectively detect distance information between different positions of the substrate and the mask plate and feed the distance information back to the host.

[0021] In some embodiments, the support blocks are distributed in a matrix along the first direction and the second direction, the distance sensors are disposed between two adjacent support blocks, and the distance sensors are distributed along the first direction and the second direction.

[0022] In some embodiments, the chemical vapor deposition device further includes a plurality of lifting members, each of which is fixedly arranged, each of which is used to support the bottom of the substrate, and each of the distance sensors is respectively mounted on each of the lifting members.

[0023] The beneficial effect of the chemical vapor deposition device provided by the present application is that: by distributing a plurality of support blocks in a matrix on a fixed seat, and by a driving mechanism being able to drive each support block to move separately, so as to adjust the parameters of each support block separately, so that each support surface can be combined to form a support shape, so that during the deposition process, the support shape of each support block can be adjusted according to the actual deposited film thickness of the substrate, thereby improving the uniformity of the deposition thickness at various locations on the substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0025] Figure 1 A schematic diagram of the structure of a mask plate, a substrate and various supporting blocks in a chemical vapor deposition device provided in an embodiment of the present application;

[0026] Figure 2 A schematic diagram of the structure in which each supporting surface forms a plane in the chemical vapor deposition device provided in an embodiment of the present application;

[0027] Figure 3 A schematic diagram of a structure in which each supporting surface forms a concave surface in a chemical vapor deposition device provided in an embodiment of the present application;

[0028] Figure 4 A schematic diagram of a structure in which each supporting surface forms a convex surface in a chemical vapor deposition device provided in an embodiment of the present application;

[0029] Figure 5 A schematic diagram of the structure of a driving component in a chemical vapor deposition device provided in an embodiment of the present application;

[0030] Figure 6 A schematic diagram of the circuit principle of a chemical vapor deposition device provided in an embodiment of the present application;

[0031] Figure 7 A schematic diagram of the structure of a chemical vapor deposition device provided in an embodiment of the present application;

[0032] Figure 8A schematic diagram of the distribution of support blocks and distance sensors in a chemical vapor deposition device provided in an embodiment of the present application;

[0033] Fig. 9 A schematic diagram of the distribution of support blocks and distance sensors in a chemical vapor deposition device provided in another embodiment of the present application.

[0034] Among them, the reference numerals in the figure are:

[0035] 100, fixed seat; 200, support block; 210, support surface; 300, driving mechanism; 310, driving assembly; 311, rotating driving member; 312, deceleration structure; 313, connecting rod; 400, mask plate; 500, distance sensor; 600, host; 700, lifting member; 800, cavity; 900, diffusion plate; 1000, shelf pin; 1100, thickness detection structure; 1200, shadow frame; 2, substrate. DETAILED DESCRIPTION

[0036] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present application more clearly understood, the present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0037] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it can be directly on the other element or indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or indirectly connected to the other element.

[0038] It should be understood that the terms "length", "width", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0039] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of this application, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0040] Deposition is performed on the display glass substrate to form a dense encapsulation film, which can prevent water vapor, oxygen, etc. from corroding the semiconductor display device, thereby extending the life of the display device. However, when depositing a thin film on a glass substrate, the glass substrate is generally supported by a convex base, which easily leads to poor uniformity of the deposited film on the glass substrate. In addition, there are other influencing factors that can also lead to poor uniformity of the deposited film.

[0041] Based on this, an embodiment of the present application provides a chemical vapor deposition device, which divides the base into multiple movable support blocks 200, so that the parameters of each support block 200 can be changed in time according to the deposition conditions of the thin film to adjust the deposition thickness at each position of the glass substrate 2, thereby improving the uniformity of the deposited thin film on the glass substrate 2.

[0042] See also Figures 1 to 4 Now, the chemical vapor deposition device for thin film encapsulation provided in the embodiment of the present application is described. The chemical vapor deposition device is used to deposit a thin film on a substrate 2. The substrate 2 can be a glass substrate 2 or a substrate 2 of other materials, which is not limited here.

[0043] The chemical vapor deposition device includes a fixed base 100, a plurality of support blocks 200 distributed on the fixed base 100, and a driving mechanism 300. The support block 200 has a support surface 210. The driving mechanism 300 is used to drive each support block 200 to move separately to adjust the parameters of each support block 200 separately so that each support surface 210 is combined to form a support shape. Each support surface 210 is used to jointly support a substrate 2.

[0044] The parameters of the support block 200 include at least one of the position of the support block 200 and the angle of the support block 200. Specifically, adjusting the position of the support block 200 means adjusting the position of each support block 200 by driving the support block 200 to move; adjusting the angle of the support block 200 means driving the support block 200 to rotate to adjust the angle of the support surface 210 of each support block 200 relative to the horizontal plane, for example, horizontal, vertical, or inclined; adjusting the position and angle of the support block 200 means driving the support block 200 to move and rotate to adjust the position and angle of the support block 200. It should be noted that the movement of each support block 200 can be the same or the movement of each support block 200 is not completely the same. It should be noted that no matter how the support blocks 200 are adjusted, it is necessary to ensure that the support surface 210 of each support block 200 faces the substrate 2, and the support surface 210 of each support block 200 can be combined together to form a support shape, which can be at least one of a plane, a concave surface, and a convex surface to ensure support for the substrate 2. Specifically, each support surface 210 can be combined to form a plane, a concave surface or a convex surface, or each support surface 210 can be combined to form a partial plane and a partial concave surface, or a partial plane and a partial convex surface, or a partial concave surface and a partial convex surface, or a partial plane, a partial concave surface and a partial convex surface. Figure 2 The support surfaces 210 of the support blocks 200 are combined to form a plane. Figure 3 The support surfaces 210 of the support blocks 200 are combined to form a concave surface. Figure 4 The supporting surfaces 210 of each supporting block 200 are combined to form a convex surface.

[0045] In practical applications, the deposition thickness at each position of the substrate 2 can be obtained in real time by observation or detection, and then the parameters of each support block 200 can be adjusted in time through the driving mechanism 300 to adjust the deposition thickness of ions or ion clusters at various locations on the substrate 2, thereby improving the uniformity of the deposition thickness at various locations on the substrate 2.

[0046] In the embodiment of the present application, a plurality of support blocks 200 are distributed in a matrix on a fixed seat 100, and each support block 200 can be driven to move separately by a driving mechanism 300, so as to adjust the parameters of each support block 200 separately, so that each support surface 210 can be combined to form a support shape, so that during the deposition process, the support shape of each support block 200 can be adjusted according to the actual deposited film thickness of the substrate 2, thereby improving the uniformity of the deposition thickness at various locations on the substrate 2.

[0047] In some embodiments, when the support shape formed by the combination of the support surfaces 210 is a plane, the support surface 210 is a plane; when the support shape formed by the combination of the support surfaces 210 is a concave surface, the support surface 210 is a plane, an arc surface or a curved surface; when the support shape formed by the combination of the support surfaces 210 is a convex surface, the support surface 210 is a plane, an arc surface or a curved surface. In actual design, the designer can select the support shape formed by the combination of the support surfaces 210 according to actual deposition needs. For example, the support shape formed by the combination of the support surfaces 210 can be designed to be a plane and / or a concave surface, or the support shape formed by the combination of the support surfaces 210 can be designed to be a plane and / or a convex surface, or the support shape formed by the combination of the support surfaces 210 can be designed to be a concave surface and / or a convex surface, or the support shape formed by the combination of the support surfaces 210 can be designed to be a plane and / or a convex surface, or the support shape formed by the combination of the support surfaces 210 can be designed to be a plane and / or a convex surface, or the support shape formed by the combination of the support surfaces 210 can be designed to be a plane and / or a convex surface and / or a concave surface. When the support shape includes a plane, the support surface 210 can only be designed as a plane during design; when the support shape does not include a plane, the support surface 210 can be designed as a plane, an arc surface or a curved surface during design.

[0048] In the present application, the movement of each supporting block 200 includes different forms of movement.

[0049] For example, in some of these embodiments, see Figures 2 to 4 The movement of the support block 200 includes rotation, and the driving mechanism 300 drives each support block 200 to perform micro-rotation respectively, so that the support surfaces 210 of each support block 200 are combined to form a plane and / or a concave surface / or a convex surface.

[0050] For example, in some other embodiments of the present application, the movement of the support block 200 includes rotation and lifting movement. The driving mechanism 300 can not only drive the support block 200 to rotate, but also drive each support block 200 to rise and fall, so that the change range of the support shape is larger and the adjustment effect of the film thickness uniformity is better.

[0051] In the present application, the driving mechanism 300 can drive each supporting block 200 to move in different ways.

[0052] For example, in some of these embodiments, see Figures 1 to 3 The driving mechanism 300 includes a plurality of driving components 310, one driving component 310 is provided for each supporting block 200, and the driving component 310 is used to drive the supporting block 200 to move. In this embodiment, by providing one driving component 310 for each supporting block 200, each supporting block 200 can be independently driven and controlled, the driving control is simple, and each supporting surface 210 can be combined to form a plurality of groups of different supporting shapes, so as to improve the consistency of the thickness of the deposited film on the substrate 2.

[0053] Specifically, the driving component 310 can be used to drive the support block 200 to rotate so that the various support surfaces 210 are combined to form support shapes of different shapes; or, the driving component 310 can be used to drive the support block 200 to rotate while also being able to drive the support block 200 to rise and fall, so that the various support surfaces 210 are combined to form support shapes of different shapes; or, a part of the driving component 310 can be used to drive the corresponding support block 200 to rotate, and another part of the driving component 310 can be used to drive the corresponding support block 200 to rotate and rise and fall.

[0054] See also Figure 5 When the driving assembly 310 is used to drive the support block 200 to rotate, the driving assembly 310 may include a rotating driving member 311, which is installed on the fixing seat 100, and the support block 200 is connected to the output end of the rotating driving member 311, and the supporting block 200 is driven to rotate by the rotating driving member 311.

[0055] Optionally, see Figure 5 The driving assembly 310 further includes a deceleration structure 312, which is connected between the rotating driving member 311 and the supporting block 200, so that the supporting block 200 can be rotated at a small angle. Specifically, the deceleration structure 312 includes a gear assembly.

[0056] Optionally, see Figure 5 The driving assembly 310 further includes a connecting rod 313, one end of which is hinged to the output end of the deceleration structure 312, and the other end of which is hinged to the support block 200. The setting of the connecting rod 313 can not only transmit complex motions, but also bear complex stresses, and can also reduce the structural interference of each driving assembly 310 under the support block 200.

[0057] When the driving assembly 310 is used to drive the support block 200 to rotate and also to drive the support block 200 to rise and fall, the driving assembly 310 also includes a lifting driving member, the output end of which is connected to the rotating driving member 311, and the lifting driving member drives the rotating driving member 311 and the support block 200 to rise and fall as a whole. Alternatively, the lifting driving member may not be provided, but a connecting rod assembly may be connected to the output end of the speed reduction structure 312, and the supporting block 200 may be driven to perform a combined movement of lifting and rotating through the connecting rod assembly.

[0058] In other embodiments of the present application, the driving mechanism 300 includes a plurality of driving components 310, and a driving component 310 is provided for each group of support blocks 200. The driving component 310 is used to drive the same group of support blocks 200 to move respectively, and each group of support blocks 200 includes at least two support blocks 200. That is, different support blocks 200 can be driven to move respectively by one driving component 310. At this time, a reduction structure 312 with different reduction ratios can be connected to the output end of the rotating driving member 311, and different support blocks 200 can be connected through different reduction structures 312, so as to realize the situation that the same rotating driving member 311 drives different support blocks 200 to move.

[0059] In some embodiments, see Figure 1 and Figure 6 The chemical vapor deposition device also includes a mask plate 400, a distance sensor 500 and a host 600. The mask plate 400 is spaced apart from the substrate 2. The distance sensor 500 is used to detect the distance information between the mask plate 400 and the substrate 2 and feed it back to the host 600. The host 600 controls the driving mechanism 300 according to the distance information to drive each supporting block 200 to move separately.

[0060] Specifically, the first distance D1 between the mask plate 400 and the substrate 2 is related to the deposition thickness and deposition range of the thin film on the substrate 2. By adjusting the first distance D1 between the mask plate 400 and the substrate 2, the deposition thickness and deposition range of the thin film can be adjusted. In the design application, the distance sensor 500 can detect the distance information between the mask plate 400 and the substrate 2 in real time and feedback it to the host 600. When the host 600 determines that the first distance D1 between the mask plate 400 and the substrate 2 is different from the preset distance pre-stored in the host 600, the driving mechanism 300 can be used to drive each support block 200 to move separately to adjust the shape and position of the support shape formed by the combination of each support block 200, so as to adjust the first distance D1 between the substrate 2 supported on each support block 200 and the mask plate 400, so as to adjust the deposition thickness and deposition range of the thin film.

[0061] In some embodiments, see Figure 1 and Figure 6 The chemical vapor deposition device also includes a thickness detection structure 1100 for detecting the thickness of the film on the substrate 2 and feeding back to the host 600. The host 600 controls the driving mechanism 300 to drive each supporting block 200 to move separately according to the distance information and the thickness information.

[0062] Specifically, the thickness of the film at each location on the substrate 2 can be known based on the film thickness information of the substrate 2, so that it can be determined which locations on the substrate 2 need to increase the deposition thickness more and which locations can increase the deposition thickness less to ensure the uniformity of the film thickness. The host 600 can determine which locations of the substrate 2 need to increase the first distance D1 and which locations of the substrate 2 need to decrease the first distance D1 based on the thickness information and the distance information, thereby controlling the driving mechanism 300 to drive each support block 200 to move, thereby achieving the requirement of uniformity of the thickness of the deposited film on the substrate 2.

[0063] Optionally, the thickness detection structure 1100 may detect the film thickness by optical monitoring technology, such as using an ellipsometer or an interferometer to measure the film thickness in real time.

[0064] In some embodiments, see Figure 6 , Figure 8 and Fig. 9 The chemical vapor deposition device includes a plurality of distance sensors 500, each of which is used to detect the distance information between different positions of the substrate 2 and the mask plate 400 and feed it back to the host 600. In practical applications, the substrate 2 is carried on supporting shapes of different shapes, and the first distance D1 from each position of the substrate 2 to the mask plate 400 is not completely the same. The first distance D1 from each position of the substrate 2 to the mask plate 400 is detected by a plurality of distance sensors 500 and fed back to the host 600. The host 600 compares the actual data of each first distance D1 with the preset distance, and drives each support block 200 to move respectively through the driving mechanism 300, so that the first distance D1 from each position of the substrate 2 to the mask plate 400 can be adjusted, so as to achieve more accurate distance adjustment and further improve the uniformity of the film thickness.

[0065] In some embodiments, see Figure 8 and Fig. 9 , each support block 200 is distributed in a matrix along the first direction X and the second direction Y, the distance sensors 500 are arranged between two adjacent support blocks 200, and each distance sensor 500 is distributed along the first direction X and the second direction Y. A distance sensor 500 is arranged between each two adjacent support blocks 200, or a distance sensor 500 is arranged after every plurality of support blocks 200, and the number and distribution density of the distance sensors 500 can be set according to actual needs.

[0066] In some embodiments, see Figure 8 Along the second direction Y, a distance sensor 500 is provided between every two adjacent support blocks 200 ; along the first direction X, a distance sensor 500 is provided every one, two or three support blocks 200 .

[0067] In some other embodiments, see Fig. 9 , each distance sensor 500 is distributed in an X shape.

[0068] In some embodiments, see Figure 1 and Figure 7 The chemical vapor deposition apparatus further includes a plurality of lifting members 700, each of which is fixedly arranged and used to support the bottom of the substrate 2. When the substrate 2 needs to be unloaded from each supporting block 200, the driving mechanism 300 can be used to drive each supporting block 200 to descend or concave, so that the substrate 2 is supported on the lifting members 700, thereby realizing the unloading of the substrate 2.

[0069] In some embodiments, each distance sensor 500 is mounted on each lifting member 700, that is, the lifting member 700 is not only used to lift the substrate 2, but also used to carry each distance sensor 500, so as to detect the first distance D1 between the guide mask plates 400 at various locations of the substrate 2. It can be understood that in other embodiments of the present application, the distance sensor 500 can also be installed through an additional mounting structure, which is not limited here.

[0070] In some embodiments, see Figure 1 The distance sensor 500 is installed at the top of the lifting member 700. The distance sensor 500 is used to emit infrared light to the mask plate 400, so that the second distance D2 between the distance sensor 500 and the mask plate 400 can be obtained, and the third distance D3 between the distance sensor 500 and the deposition surface of the substrate 2 is a determined value. The first distance D1 is equal to the second distance D2 minus the third distance D3. The third distance D3 can be preset in the host 600 or the distance sensor 500. Therefore, when the distance sensor 500 feeds back the second distance D2 to the host 600, the host 600 can calculate the first distance D1.

[0071] In some embodiments, see Figure 7 The chemical vapor deposition device also includes a reaction chamber 800 for gas reaction, a diffusion plate 900 disposed on the top of the reaction chamber 800 and used for diffusion of reaction gas, a support pin 1000 located at the edge of the fixing seat 100 for supporting the mask plate 400, and an electric field radio frequency module. Among them, the electric field radio frequency module is used to control the deposition rate, improve the quality of the film, improve the quality of the deposit, and achieve low-temperature deposition.

[0072] In addition, a shadow frame 1200 for pressing the mask plate 400 is provided above the mask plate 400 , and the shadow frame 1200 is used to fix the mask plate 400 .

[0073] The above description is only a preferred embodiment of the present application and is not intended to limit the present application. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present application should be included in the protection scope of the present application.

Claims

1. A chemical vapor deposition apparatus for depositing a thin film on a substrate, characterized in that: The chemical vapor deposition device includes a fixed seat, a plurality of support blocks distributed on the fixed seat, and a driving mechanism, wherein the support blocks have support surfaces, and the driving mechanism is used to drive each of the support blocks to move separately, so as to adjust the parameters of each of the support blocks separately, so that each of the support surfaces is combined to form a support shape, and each of the support surfaces is used to jointly support the substrate.

2. The chemical vapor deposition apparatus according to claim 1, characterized in that: The parameters of the support block include at least one of the position of the support block and the angle of the support block, and the support shape includes at least one of a plane, a concave surface, and a convex surface. Preferably, When the support shape formed by the combination of the support surfaces is a plane, the support surface is a plane; When the supporting shape formed by the combination of the supporting surfaces is a concave surface, the supporting surface is a plane, an arc surface or a curved surface; When the supporting shape formed by the combination of the supporting surfaces is a convex surface, the supporting surface is a plane, an arc surface or a curved surface.

3. The chemical vapor deposition apparatus according to claim 1, characterized in that: The movement of the support block includes rotation; Alternatively, the movement of the support block includes rotation and lifting movement.

4. The chemical vapor deposition apparatus according to claim 1, wherein: The driving mechanism comprises a plurality of driving components, one of which corresponds to each supporting block, and the driving component is used to drive the supporting block to move; Alternatively, the driving mechanism includes a plurality of driving components, one driving component is provided for each group of the support blocks, the driving component is used to drive the support blocks in the same group to move separately, and each group of the support blocks includes at least two support blocks.

5. The chemical vapor deposition apparatus according to claim 4, characterized in that: The driving assembly comprises a rotary driving member, a reduction structure installed at the output end of the rotary driving member, and a connecting rod connected to the output end of the reduction structure, wherein the connecting rod is hinged to the supporting block.

6. The chemical vapor deposition apparatus according to any one of claims 1 to 5, characterized in that: The chemical vapor deposition device further includes a mask plate, a distance sensor and a host, wherein the mask plate is spaced apart from the substrate, the distance sensor is used to detect the distance information between the mask plate and the substrate and feed it back to the host, and the host controls the driving mechanism according to the distance information to drive each of the supporting blocks to move respectively. Preferably, the edge of the fixing seat is provided with support pins for supporting the mask plate; Preferably, a shadow frame for crimping the mask plate is provided above the mask plate; Preferably, the chemical vapor deposition device further comprises a reaction chamber, a diffusion plate for diffusing the reaction gas is disposed on the top of the reaction chamber, and an electric field radio frequency module is also disposed in the reaction chamber.

7. The chemical vapor deposition apparatus according to claim 6, characterized in that: The chemical vapor deposition device also includes a thickness detection structure for detecting the thickness of the film on the substrate and feeding back to the host. The host controls the driving mechanism according to the distance information and the thickness information to drive each of the supporting blocks to move separately.

8. The chemical vapor deposition apparatus according to claim 6, characterized in that: The chemical vapor deposition device includes a plurality of distance sensors, each of which is used to respectively detect distance information between different positions of the substrate and the mask plate and feed back the distance information to the host.

9. The chemical vapor deposition apparatus according to claim 8, characterized in that: The plurality of support blocks are distributed in a matrix along a first direction and a second direction. The distance sensors are arranged between two adjacent support blocks. Each of the distance sensors is distributed along the first direction and the second direction.

10. The chemical vapor deposition apparatus according to claim 9, characterized in that: The chemical vapor deposition device further includes a plurality of lifting members, each of which is fixedly arranged and used for supporting below the substrate, and each of the distance sensors is respectively mounted on each of the lifting members.

Images