Chemical vapor deposition apparatus

Abstract

The application provides a chemical vapor deposition device for depositing a thin film on a substrate, the chemical vapor deposition device comprising a fixed base, a plurality of support blocks distributed on the fixed base, and a driving mechanism, each support block having a support surface, and the driving mechanism being configured to drive each support block to move respectively to adjust a parameter of each support block, so that the support surfaces combine to form a support shape, and each support surface is configured to support the substrate together. The chemical vapor deposition device of the application can adjust the support shape of each support block by the driving mechanism during the deposition process according to the actual deposition film thickness of the substrate, so as to improve the uniformity of the deposition thickness of the substrate.

Description

Technical Field

[0001] This application belongs to the field of chemical vapor deposition technology, and more specifically, relates to a chemical vapor deposition apparatus. Background Technology

[0002] Chemical vapor deposition (CVD) is a vapor-phase growth method for preparing thin film materials. It involves introducing one or more compounds or elemental gases containing the elements constituting the thin film into a reaction chamber containing a substrate, where a solid thin film is deposited on the substrate surface through a gas-phase chemical reaction. The reaction mechanism of CVD is as follows: the reactant gas is introduced into the reactor, where it dissociates into highly reactive ions or ion clusters (plasma) under the influence of heat, electricity, or light energy. These ions or ion clusters diffuse to the surface of the solid substrate, where they undergo a chemical reaction to generate solid products that are then deposited on the substrate surface. However, currently, the thickness uniformity of CVD thin films is relatively poor. Summary of the Invention

[0003] The purpose of this application is to provide a chemical vapor deposition apparatus to solve the technical problem of poor thickness uniformity of chemical vapor deposition films in the prior art.

[0004] To achieve the above objectives, the technical solution adopted in this application is: to provide a chemical vapor deposition apparatus for depositing a thin film on a substrate. The chemical vapor deposition apparatus includes a fixed base, a plurality of support blocks distributed on the fixed base, and a driving mechanism. The support blocks have support surfaces, and the driving mechanism is used to drive each of the support blocks to move separately, so as to adjust the parameters of each of the support blocks respectively, so that the support surfaces are combined to form a support shape, and the support surfaces are used to jointly support the substrate.

[0005] In some embodiments, the parameters of the support block include at least one of the position of the support block and the angle of the support block, and the support shape includes at least one of the plane, concave surface, and convex surface.

[0006] Preferred,

[0007] When the support shape formed by the combination of the aforementioned support surfaces is planar, the support surface is planar;

[0008] When the support shape formed by the combination of the aforementioned support surfaces is a concave surface, the support surface is a plane, an arc surface, or a curved surface;

[0009] When the support shape formed by the combination of the various support surfaces is a convex surface, the support surface is a plane, an arc surface, or a curved surface.

[0010] In some embodiments, the movement of the support block includes rotation;

[0011] Alternatively, the movement of the support block may include rotation and lifting movements.

[0012] In some embodiments, the driving mechanism includes a plurality of driving components, with one driving component corresponding to each support block, and the driving component is used to drive the support block to move;

[0013] Alternatively, the driving mechanism includes multiple driving components, with one driving component corresponding to each group of support blocks. The driving components are used to drive the support blocks in the same group to move respectively, and each group of support blocks includes at least two support blocks.

[0014] In some embodiments, the drive assembly includes a rotary drive member, a reduction gear structure mounted on the output end of the rotary drive member, and a connecting rod connected to the output end of the reduction gear structure, the connecting rod being hinged to the support block.

[0015] In some embodiments, the chemical vapor deposition apparatus further includes a mask, a distance sensor, and a host computer. The mask is spaced apart from the substrate. The distance sensor detects the distance information between the mask and the substrate and feeds it back to the host computer. The host computer controls the drive mechanism based on the distance information to drive each of the support blocks to move respectively.

[0016] Preferably, the edge of the fixing seat is provided with a support for supporting the mask plate;

[0017] Preferably, a shadow frame for pressing the mask is provided above the mask plate;

[0018] Preferably, the chemical vapor deposition apparatus further includes a reaction chamber, the top of which is provided with a diffuser plate for diffusing the reaction gas, and the reaction chamber is also provided with an electric field radio frequency module.

[0019] In some embodiments, the chemical vapor deposition apparatus further includes a thickness detection structure for detecting the thickness of the thin film on the substrate and feeding it back to the host computer, wherein the host computer controls the drive mechanism to drive each of the support blocks to move according to the distance information and the thickness information.

[0020] In some embodiments, the chemical vapor deposition apparatus includes a plurality of distance sensors, each of which is used to detect the distance information between different positions of the substrate and the mask and to feed it back to the host.

[0021] In some embodiments, the support blocks are arranged in a matrix along a first direction and a second direction, and the distance sensors are disposed between two adjacent support blocks, with each distance sensor distributed along the first direction and the second direction.

[0022] In some embodiments, the chemical vapor deposition apparatus further includes a plurality of lifting members, each of which is fixedly disposed and used to support the substrate below, and each of the distance sensors is respectively mounted on each of the lifting members.

[0023] The beneficial effects of the chemical vapor deposition apparatus provided in this application are as follows: by distributing multiple support blocks in a matrix on a fixed base, and by driving a drive mechanism to drive each support block to move separately, the parameters of each support block can be adjusted so that each support surface can be combined to form a support shape. Thus, during the deposition process, the support shape of each support block can be adjusted according to the actual deposition film thickness of the substrate, thereby improving the uniformity of deposition thickness at various parts of the substrate. Attached Figure Description

[0024] To more clearly illustrate the technical solutions in the embodiments of this application, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0025] Figure 1 This is a schematic diagram of the structure of the mask, substrate and support blocks in the chemical vapor deposition apparatus provided in the embodiments of this application.

[0026] Figure 2 A schematic diagram of the structure in the chemical vapor deposition apparatus provided in the embodiments of this application, showing how each support surface forms a plane.

[0027] Figure 3 A schematic diagram of the structure in the chemical vapor deposition apparatus provided in the embodiments of this application, showing that each support surface forms a concave surface;

[0028] Figure 4 A schematic diagram of the structure in the chemical vapor deposition apparatus provided in the embodiments of this application, showing that each support surface forms a convex surface;

[0029] Figure 5 This is a schematic diagram of the drive component in the chemical vapor deposition apparatus provided in the embodiments of this application;

[0030] Figure 6 A schematic diagram of the circuit principle of the chemical vapor deposition apparatus provided in the embodiments of this application;

[0031] Figure 7 This is a schematic diagram of the structure of the chemical vapor deposition apparatus provided in the embodiments of this application;

[0032] Figure 8A schematic diagram showing the distribution of the support block and distance sensor in the chemical vapor deposition apparatus provided in the embodiments of this application;

[0033] Figure 9 This is a schematic diagram showing the distribution of the support block and distance sensor in a chemical vapor deposition apparatus provided in another embodiment of this application.

[0034] The following are the labeling elements in the figure:

[0035] 100. Fixed base; 200. Support block; 210. Support surface; 300. Drive mechanism; 310. Drive assembly; 311. Rotary drive component; 312. Deceleration structure; 313. Connecting rod; 400. Mask plate; 500. Distance sensor; 600. Main unit; 700. Lifting component; 800. Cavity; 900. Diffuser plate; 1000. Support pin; 1100. Thickness detection structure; 1200. Shading frame; 2. Substrate. Detailed Implementation

[0036] To make the technical problems, technical solutions, and beneficial effects to be solved by this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and are not intended to limit the scope of this application.

[0037] It should be noted that when a component is referred to as being "fixed to" or "set on" another component, it can be directly on or indirectly on that other component. When a component is referred to as being "connected to" another component, it can be directly connected to or indirectly connected to that other component.

[0038] It should be understood that the terms "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0039] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this application, "multiple" means two or more, unless otherwise explicitly specified.

[0040] Depositing a dense encapsulating film on a display glass substrate can prevent moisture, oxygen, and other substances from corroding the semiconductor display device, thus extending its lifespan. However, when depositing the film on the glass substrate, a convex base is typically used to support the substrate, which can easily lead to poor uniformity of the deposited film. In addition, other factors can also cause poor uniformity in the deposited film.

[0041] Based on this, this application provides a chemical vapor deposition apparatus, which divides the base into multiple movable support blocks 200, thereby changing the parameters of each support block 200 in a timely manner according to the deposition of the thin film, so as to adjust the deposition thickness at each position of the glass substrate 2, thereby improving the uniformity of the deposited thin film on the glass substrate 2.

[0042] Please see Figures 1 to 4 The chemical vapor deposition apparatus for thin-film encapsulation provided in the embodiments of this application will now be described. This chemical vapor deposition apparatus is used to deposit a thin film on a substrate 2. The substrate 2 can be a glass substrate 2, or a substrate 2 of other materials, and is not limited to any particular material here.

[0043] The chemical vapor deposition apparatus includes a base 100, a plurality of support blocks 200 distributed on the base 100, and a drive mechanism 300. Each support block 200 has a support surface 210. The drive mechanism 300 is used to drive each support block 200 to move separately, so as to adjust the parameters of each support block 200 respectively, so that each support surface 210 is combined to form a support shape. Each support surface 210 is used to jointly support the substrate 2.

[0044] The parameters of the support block 200 include at least one of the position and angle of the support block 200. Specifically, adjusting the position of the support block 200 means adjusting the position of each support block 200 by driving the support block 200 to move; adjusting the angle of the support block 200 means adjusting the angle of the support surface 210 of each support block 200 relative to the horizontal plane by driving the support block 200 to rotate, for example, horizontal, vertical, or inclined; adjusting the position and angle of the support block 200 means adjusting the position and angle of the support block 200 by driving the support block 200 to move and rotate. It should also be noted that the movement of each support block 200 can be the same or not exactly the same. It should be noted that, regardless of how the support blocks 200 are adjusted, it is necessary to ensure that the support surface 210 of each support block 200 faces the substrate 2, and that the support surfaces 210 of each support block 200 can be combined to form a support shape, which can be at least one of a plane, a concave surface, and a convex surface, to ensure support for the substrate 2. Specifically, each supporting surface 210 can be combined to form a plane, a concave surface, or a convex surface, or each supporting surface 210 can be combined to form a partial plane and a partial concave surface, or a partial plane and a partial convex surface, or a partial concave surface and a partial convex surface, or a partial plane, a partial concave surface, and a partial convex surface. For example Figure 2 The support surfaces 210 of each support block 200 are combined to form a plane. Figure 3 The support surfaces 210 of each support block 200 combine to form a concave surface. Figure 4 The support surfaces 210 of each support block 200 are combined to form a convex surface.

[0045] In practical applications, the deposition thickness at each location of the substrate 2 can be obtained in real time by observation or detection. Then, the parameters of each support block 200 can be adjusted in a timely manner by the drive mechanism 300, thereby adjusting the deposition thickness of ions or ion clusters at each location of the substrate 2, and thus improving the uniformity of the deposition thickness at each location of the substrate 2.

[0046] In this embodiment, multiple support blocks 200 are distributed in a matrix on the fixed base 100, and each support block 200 can be driven to move by the driving mechanism 300 to adjust the parameters of each support block 200 so that each support surface 210 can be combined to form a support shape. This allows the support shape of each support block 200 to be adjusted according to the actual deposition film thickness of the substrate 2 during the deposition process, thereby improving the uniformity of deposition thickness at various locations on the substrate 2.

[0047] In some embodiments, when the support shape formed by the combination of the support surfaces 210 is planar, the support surface 210 is planar; when the support shape formed by the combination of the support surfaces 210 is concave, the support surface 210 is planar, arc-shaped, or curved; when the support shape formed by the combination of the support surfaces 210 is convex, the support surface 210 is planar, arc-shaped, or curved. In actual design, the designer can select the support shape formed by the combination of the support surfaces 210 according to the actual deposition needs. For example, the support shape formed by the combination of the support surfaces 210 can be planar and / or concave, or it can be planar and / or convex, or it can be concave and / or convex, or it can be planar and / or convex and / or concave. When the support shape includes a plane, the support surface 210 can only be designed as a plane during the design process. When the support shape does not include a plane, the support surface 210 can be designed as a plane, an arc surface, or a curved surface during the design process.

[0048] In this application, the movement of each support block 200 includes different forms of movement.

[0049] For example, in some of these embodiments, please refer to Figures 2 to 4 The movement of the support block 200 includes rotation. Each support block 200 is driven to rotate slightly by the drive mechanism 300 so that the support surfaces 210 of each support block 200 are combined to form a plane and / or a concave surface and / or a convex surface.

[0050] For example, in some other embodiments of this application, the movement of the support block 200 includes rotation and lifting movements. The drive mechanism 300 can not only drive the support block 200 to rotate, but also drive each support block 200 to lift, so that the change range of the support shape is greater and the adjustment effect of its film thickness uniformity is better.

[0051] In this application, the drive mechanism 300 can drive the movement of each support block 200 in different ways.

[0052] For example, in some of these embodiments, please refer to Figures 1 to 3 The driving mechanism 300 includes multiple driving components 310, with one driving component 310 corresponding to each support block 200. The driving component 310 is used to drive the support block 200 to move. In this embodiment, by providing one driving component 310 for each support block 200, each support block 200 can be driven and controlled independently. The driving control is simple, and the support surfaces 210 can be combined to form multiple sets of different support shapes, thereby improving the consistency of the film thickness deposited on the substrate 2.

[0053] Specifically, the drive component 310 can be used to drive the support block 200 to rotate, so that the support surfaces 210 can be combined to form different support shapes; or, the drive component 310 can be used to drive the support block 200 to rotate and also drive the support block 200 to rise and fall, so that the support surfaces 210 can be combined to form different support shapes; or, a part of the drive component 310 can be used to drive the corresponding support block 200 to rotate, and another part of the drive component 310 can be used to drive the corresponding support block to rotate and rise and fall.

[0054] Please see Figure 5 When the drive assembly 310 is used to drive the support block 200 to rotate, the drive assembly 310 may include a rotary drive 311, the rotary drive 311 is mounted on the fixed base 100, and the support block 200 is connected to the output end of the rotary drive 311, and the support block 200 is driven to rotate by the rotary drive 311.

[0055] Optionally, please refer to Figure 5 The drive assembly 310 also includes a reduction structure 312, which is connected between the rotary drive member 311 and the support block 200, thereby enabling the support block 200 to rotate at a small angle. Specifically, the reduction structure 312 includes a gear assembly.

[0056] Optionally, please refer to Figure 5 The drive assembly 310 also includes a connecting rod 313, one end of which is hinged to the output end of the reduction structure 312, and the other end of which is hinged to the support block 200. The connecting rod 313 is designed to not only transmit complex motions but also bear complex stresses, and further reduce structural interference between the drive assemblies 310 below the support block 200.

[0057] When the drive assembly 310 is used to drive the support block 200 to rotate and also to lift the support block 200, the drive assembly 310 also includes a lifting drive component. The output end of the lifting drive component is connected to the rotation drive component 311, and the lifting drive component drives the rotation drive component 311 and the support block 200 to lift as a whole. Alternatively, a lifting drive component may not be provided. Instead, a linkage assembly is connected to the output end of the reduction structure 312, and the linkage assembly drives the support block 200 to perform a combined lifting and rotating motion.

[0058] In other embodiments of this application, the drive mechanism 300 includes multiple drive components 310, with one drive component 310 corresponding to each group of support blocks 200. The drive component 310 is used to drive the same group of support blocks 200 to move separately, and each group of support blocks 200 includes at least two support blocks 200. That is, different support blocks 200 can be driven to move by one drive component 310. At this time, a reduction structure 312 with different reduction ratios can be connected to the output end of the rotary drive 311, and different support blocks 200 can be connected through different reduction structures 312, thereby realizing the situation where the same rotary drive 311 drives different support blocks 200 to move.

[0059] In some embodiments, please refer to Figure 1 and Figure 6 The chemical vapor deposition apparatus also includes a mask 400, a distance sensor 500, and a host 600. The mask 400 is spaced apart from the substrate 2. The distance sensor 500 is used to detect the distance information between the mask 400 and the substrate 2 and feed it back to the host 600. The host 600 controls the drive mechanism 300 according to the distance information to drive each support block 200 to move respectively.

[0060] Specifically, the first distance D1 between the mask 400 and the substrate 2 is related to the deposition thickness and deposition range of the thin film on the substrate 2. By adjusting the first distance D1 between the mask 400 and the substrate 2, the deposition thickness and deposition range of the thin film can be adjusted. In design applications, the distance sensor 500 can detect the distance information between the mask 400 and the substrate 2 in real time and feed it back to the host 600. When the host 600 determines that the first distance D1 between the mask 400 and the substrate 2 is different from the preset distance stored in the host 600, it can drive each support block 200 to move separately through the drive mechanism 300 to adjust the shape and position of the support shape formed by the combination of each support block 200. This allows adjustment of the first distance D1 between the substrate 2 supported on each support block 200 and the mask 400, thereby adjusting the deposition thickness and deposition range of the thin film.

[0061] In some embodiments, please refer to Figure 1 and Figure 6 The chemical vapor deposition apparatus also includes a thickness detection structure 1100 for detecting the thickness of the thin film on the substrate 2 and feeding it back to the host 600. The host 600 controls the drive mechanism 300 to drive each support block 200 to move according to the distance information and the thickness information.

[0062] Specifically, based on the film thickness information of substrate 2, the thickness of the film at various locations on substrate 2 can be determined. This allows for the assessment of which locations on substrate 2 require increased deposition thickness and which require less increased deposition thickness to ensure film thickness uniformity. The host 600, based on the thickness and distance information, can determine which locations on substrate 2 require increased or decreased first distance D1, thereby controlling the drive mechanism 300 to drive the movement of each support block 200, ultimately achieving the requirement of uniform film thickness deposition on substrate 2.

[0063] Optionally, the thickness detection structure 1100 can detect the film thickness using optical monitoring techniques, such as using an elliptic transducer or interferometer to measure the film thickness in real time.

[0064] In some embodiments, please refer to Figure 6 , Figure 8 and Figure 9 The chemical vapor deposition apparatus includes multiple distance sensors 500. Each distance sensor 500 is used to detect the distance information between different positions of the substrate 2 and the mask 400 and feed it back to the host 600. In practical applications, the substrate 2 is supported on support shapes of different shapes, and the first distance D1 from the substrate 2 to the mask 400 is not exactly the same at different points. By having multiple distance sensors 500 detect the first distance D1 from the substrate 2 to the mask 400 at different points and feed it back to the host 600, the host 600 compares the actual data of each first distance D1 with a preset distance, and drives each support block 200 to move separately through the drive mechanism 300. This allows for adjustment of the first distance D1 from the substrate 2 to the mask 400 at different points, achieving more precise distance adjustment and further improving the uniformity of the film thickness.

[0065] In some embodiments, please refer to Figure 8 and Figure 9 Each support block 200 is arranged in a matrix along the first direction X and the second direction Y. A distance sensor 500 is positioned between adjacent support blocks 200, and the distance sensors 500 are distributed along the first direction X and the second direction Y. A distance sensor 500 can be provided between every two adjacent support blocks 200, or a distance sensor 500 can be provided after every few support blocks 200. The number and distribution density of the distance sensors 500 can be set according to actual needs.

[0066] In some embodiments, please refer to Figure 8 Along the second direction Y, a distance sensor 500 is provided between every two adjacent support blocks 200; along the first direction X, a distance sensor 500 is provided every one, two or three support blocks 200.

[0067] In other embodiments, please refer to Figure 9 The distance sensors are arranged in an X-shape.

[0068] In some embodiments, please refer to Figure 1 and Figure 7 The chemical vapor deposition apparatus also includes multiple lifting members 700, each of which is fixedly installed and serves to support the lower part of the substrate 2. When it is necessary to unload the substrate 2 from the support blocks 200, the drive mechanism 300 can drive the support blocks 200 to descend or be recessed, so that the substrate 2 is supported on the lifting member 700, thereby achieving the unloading of the substrate 2.

[0069] In some embodiments, each distance sensor 500 is mounted on a lifting member 700. That is, the lifting member 700 is not only used to lift the substrate 2, but also to support each distance sensor 500 so as to detect the first distance D1 between the guide mask plates 400 at various locations on the substrate 2. It is understood that in other embodiments of this application, the distance sensor 500 can also be mounted by an additional mounting structure, which is not the only one here.

[0070] In some embodiments, please refer to Figure 1 The distance sensor 500 is installed on the top of the lifting member 700. The distance sensor 500 is used to emit infrared light to the mask plate 400, thereby obtaining the second distance D2 between the distance sensor 500 and the mask plate 400. The third distance D3 between the distance sensor 500 and the deposition surface of the substrate 2 is a fixed value. The first distance D1 is equal to the second distance D2 minus the third distance D3. The third distance D3 can be preset in the host 600 or the distance sensor 500. Therefore, when the distance sensor 500 feeds back the second distance D2 to the host 600, the host 600 can calculate and obtain the first distance D1.

[0071] In some embodiments, please refer to Figure 7 The chemical vapor deposition apparatus also includes a reaction chamber 800 for gas reaction, a diffusion plate 900 located on top of the reaction chamber 800 for diffusion of the reaction gas, a support pin 1000 located at the edge of the mounting base 100 for supporting the mask plate 400, and an electric field radio frequency module. The electric field radio frequency module is used to control the deposition rate, improve film quality, enhance the quality of the deposit, and achieve low-temperature deposition.

[0072] In addition, a shadow frame 1200 for pressing the mask 400 is provided above the mask 400, and the shadow frame 1200 is used to fix the mask 400.

[0073] The above description is merely a preferred embodiment of this application and is not intended to limit this application. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A chemical vapor deposition apparatus for depositing thin films on a substrate, characterized in that, The chemical vapor deposition apparatus includes a fixed base, a plurality of support blocks distributed on the fixed base, and a driving mechanism. The support blocks have support surfaces, and the driving mechanism is used to drive each support block to move separately, so as to adjust the parameters of each support block respectively, so that the support surfaces are combined to form a support shape, and the support surfaces are used to jointly support the substrate. The chemical vapor deposition apparatus further includes a mask, a distance sensor, a host computer, and a thickness detection structure. The mask is spaced apart from the substrate. The distance sensor is used to detect the distance information between the mask and the substrate and feed it back to the host computer. The thickness detection structure is used to detect the thickness of the thin film on the substrate and feed the thickness information back to the host computer. The host computer controls the driving mechanism to drive each of the support blocks to move according to the distance information and the thickness information.

2. The chemical vapor deposition apparatus as described in claim 1, characterized in that, The parameters of the support block include at least one of the position and angle of the support block, and the support shape includes at least one of the plane, concave surface, and convex surface. Preferred, When the support shape formed by the combination of the aforementioned support surfaces is planar, the support surface is planar; When the support shape formed by the combination of the aforementioned support surfaces is a concave surface, the support surface is a plane, an arc surface, or a curved surface; When the support shape formed by the combination of the various support surfaces is a convex surface, the support surface is a plane, an arc surface, or a curved surface.

3. The chemical vapor deposition apparatus as described in claim 1, characterized in that, The movement of the support block includes rotation; Alternatively, the movement of the support block may include rotation and lifting movements.

4. The chemical vapor deposition apparatus as described in claim 1, characterized in that, The driving mechanism includes multiple driving components, with one driving component corresponding to each support block. The driving component is used to drive the support block to move. Alternatively, the driving mechanism includes multiple driving components, with one driving component corresponding to each group of support blocks. The driving components are used to drive the support blocks in the same group to move respectively, and each group of support blocks includes at least two support blocks.

5. The chemical vapor deposition apparatus as described in claim 4, characterized in that, The drive assembly includes a rotary drive component, a reduction gear structure mounted on the output end of the rotary drive component, and a connecting rod connected to the output end of the reduction gear structure. The connecting rod is hinged to the support block.

6. The chemical vapor deposition apparatus according to any one of claims 1 to 5, characterized in that, The edge of the fixing base is provided with supports for supporting the mask plate; A shadow frame for pressing the mask is provided above the mask plate.

7. The chemical vapor deposition apparatus according to any one of claims 1 to 5, characterized in that, The chemical vapor deposition apparatus further includes a reaction chamber, the top of which is provided with a diffuser plate for diffusing the reaction gas, and an electric field radio frequency module is also provided in the reaction chamber.

8. The chemical vapor deposition apparatus according to any one of claims 1 to 5, characterized in that, The chemical vapor deposition apparatus includes multiple distance sensors, each of which is used to detect the distance information between different positions of the substrate and the mask and feed it back to the host computer.

9. The chemical vapor deposition apparatus as described in claim 8, characterized in that, The plurality of support blocks are arranged in a matrix along the first direction and the second direction, and the distance sensor is disposed between two adjacent support blocks, with each distance sensor distributed along the first direction and the second direction.

10. The chemical vapor deposition apparatus as described in claim 9, characterized in that, The chemical vapor deposition apparatus further includes multiple lifting components, each of which is fixedly disposed and used to support the substrate below. Each distance sensor is respectively mounted on each of the lifting components.

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