Box forming method and system of liquid crystal on silicon and display panel

Abstract

The invention relates to a box forming method and system for silicon-based liquid crystal and a display panel. The box forming method comprises the steps that a wafer substrate and a transparent glass substrate are provided, and the wafer substrate and / or the transparent glass substrate are / is coated with frame glue used for attaching the wafer substrate and the transparent glass substrate; the wafer substrate and the transparent glass substrate are attached to form a primary box forming panel; the primary box-forming panel is subjected to box pressing and curing, so that the box thickness of the primary box-forming panel is the target box thickness; the primary cassette panel of the target cassette thickness is thermally cured to form a target cassette panel. In the application, the primary box forming panel formed by laminating the wafer substrate and the transparent glass substrate is subjected to box pressing and curing, so that the box thickness can be adjusted in time in the box forming process, the step of releasing external pressure after box forming is reduced, the box preparation flexibility is further improved, and the production cost is reduced. The quality of the target box-forming panel can be improved, and the display panel with an excellent effect can be obtained.

Description

Technical Field

[0001] The present application relates to the technical field of liquid crystal display manufacturing, and in particular to a silicon-based liquid crystal box forming method, system and display panel. Background Art

[0002] The existing box-making process usually uses a laminating machine (air bag or flat plate) for laminating and pressing, and box-making is performed by external pressure; after box-making, the external pressure needs to be released and the colloid is solidified. The preparation process is cumbersome and it is difficult to guarantee the quality of the box panel. Summary of the invention

[0003] Based on this, it is necessary to provide a silicon-based liquid crystal box forming method, system and display panel to address the above technical problems.

[0004] In a first aspect, the present application provides a method for forming a cell of a silicon-based liquid crystal, the method comprising:

[0005] Providing a wafer substrate and a transparent glass substrate, wherein the wafer substrate and / or the transparent glass substrate is coated with a sealant for bonding the wafer substrate and the transparent glass substrate;

[0006] Laminating the wafer substrate and the transparent glass substrate to form a primary box panel;

[0007] Pressing and curing the primary box-forming panel so that the box thickness of the primary box-forming panel reaches the target box thickness;

[0008] The primary box-forming panel of the target box thickness is thermally cured to form a target box-forming panel.

[0009] In one embodiment, pressing and curing the primary boxed panel comprises:

[0010] Providing a vacuum container;

[0011] Placing the primary box panel in the cavity of a vacuum container;

[0012] The cavity is evacuated with a preset vacuum amplitude until the box thickness of the primary box panel reaches the target box thickness.

[0013] In one embodiment, the step of evacuating the cavity with a preset vacuum amplitude includes:

[0014] detecting a vacuum pressure value of the cavity, and when the vacuum pressure value of the cavity meets a preset condition, detecting whether Newton rings exist on the surface of the transparent glass substrate;

[0015] When Newton rings exist on the surface of the transparent glass substrate, the vacuuming amplitude of the vacuum container is adjusted until the Newton rings disappear and the cell thickness of the primary cell panel reaches the target cell thickness.

[0016] In one embodiment, thermally curing the primary box-forming panel of the target box thickness to form the target box-forming panel comprises:

[0017] The primary box panel of the target box thickness is irradiated by a light source to complete the primary thermal curing;

[0018] The primary box-forming panel of the target box thickness after the initial heat curing is placed in an oven for secondary heat curing; the primary box-forming panel of the target box thickness after the secondary heat curing is the target box-forming panel.

[0019] In one embodiment, a transparent conductive film is disposed on the surface of the transparent glass substrate, and the wafer substrate includes a semiconductor device layer; and bonding the wafer substrate and the transparent glass substrate includes:

[0020] Providing a laminating jig, wherein the laminating jig is provided with a positioning column and a direction alignment point;

[0021] Aligning the wafer substrate with the positioning posts and the direction alignment points in the bonding fixture;

[0022] The side of the transparent glass substrate provided with the transparent conductive film is bonded to the side of the wafer substrate where the semiconductor device layer is located.

[0023] In one of the embodiments, when the box thickness of the primary box panel is the target box thickness, the vacuum pressure value in the cavity includes: 0.1Pa ~ 50Pa.

[0024] In one embodiment, before the transparent glass substrate and the wafer substrate form a primary box panel, the method further includes:

[0025] Performing an alignment layer coating process on the wafer substrate and / or the transparent glass substrate;

[0026] A sealant with a preset pattern is applied to the wafer substrate coated with the alignment layer and / or the transparent glass substrate.

[0027] In one embodiment, the box forming method further comprises:

[0028] Liquid crystal is injected into a cavity formed by bonding the frame glue, the bonding surface of the transparent glass substrate and the bonding surface of the wafer substrate.

[0029] In a second aspect, the present application further provides a silicon-based liquid crystal box-forming system, the silicon-based liquid crystal box-forming system comprising:

[0030] A bonding jig is provided with positioning posts and direction alignment points, wherein the positioning posts and direction alignment points are used to align and bond the wafer substrate and the transparent glass substrate to form a primary box panel;

[0031] A vacuum container, comprising an upper plate, a lower plate, and a heating assembly, wherein when the upper plate and the lower plate are arranged relative to each other, a cavity for placing the primary box panel is formed between the upper plate and the lower plate, and the vacuum container is used to evacuate the cavity with a preset vacuuming amplitude, and heat the cavity by the heating assembly until the box thickness of the primary box panel reaches a target box thickness;

[0032] The heat curing device is used for heat curing the primary box-forming panel of the target box thickness to form the target box-forming panel.

[0033] In a third aspect, the present application further provides a display panel, comprising a target box-forming panel manufactured by the above-mentioned silicon-based liquid crystal box-forming method.

[0034] The above-mentioned silicon-based liquid crystal box forming method, system and display panel, the box forming method includes providing a wafer substrate-based transparent glass substrate, the wafer substrate and / or the transparent glass substrate is coated with a sealant for bonding the wafer substrate and the transparent glass substrate; bonding the wafer substrate and the transparent glass substrate to form a primary box panel; pressing and curing the primary box panel to make the box thickness of the primary box panel the target box thickness; thermally curing the primary box panel with the target box thickness to form a target box panel. In the present application, by pressing and curing the primary box panel formed by bonding the wafer substrate and the transparent glass substrate, the box thickness can be adjusted in time during the box forming process, thereby reducing the step of releasing the external pressure after box forming, further improving the flexibility of box preparation, and being conducive to improving the quality of the target box panel, and obtaining a display panel with excellent effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Figure 1 This is one of the schematic flow diagrams of a method for forming a cell of liquid crystal on silicon in one embodiment;

[0036] Figure 2 A schematic diagram of a process for pressing and curing a primary box panel in an embodiment;

[0037] Figure 3 A schematic diagram of the structure of a vacuum container in one embodiment;

[0038] Figure 4 It is a schematic diagram of a process of evacuating a cavity with a preset vacuuming amplitude in one embodiment;

[0039] Figure 5A schematic diagram of a process for thermally curing a primary box panel having a target box thickness in one embodiment;

[0040] Figure 6 It is a schematic diagram of a process of bonding a wafer substrate and a transparent glass substrate in one embodiment;

[0041] Figure 7 is a schematic structural diagram of a bonding fixture in an embodiment;

[0042] Figure 8 is a schematic structural diagram of a primary box panel in an embodiment;

[0043] Fig. 9 The second schematic diagram is a flow chart of a method for forming a cell of liquid crystal on silicon in one embodiment;

[0044] Fig.10 It is a schematic block diagram of the structure of a silicon-based liquid crystal box-forming system in one embodiment.

[0045] Reference numerals:

[0046] Upper plate of vacuum container: 310; lower plate of vacuum container: 320; box pressing platform: 330; heating component: 340; fixing quick-locking screws: 350; vacuum pressure value meter: 360; vacuum extraction pipeline: 370; primary box forming panel: 380; positioning column of bonding fixture: 710; direction alignment point of bonding fixture: 720; wafer substrate: 810; transparent glass substrate: 820; transparent conductive film: 821; box forming system of silicon-based liquid crystal: 100; bonding fixture: 101; vacuum container: 102; thermal curing equipment: 103. DETAILED DESCRIPTION

[0047] In order to make the purpose, technical solution and advantages of the present application more clearly understood, the present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0048] In one embodiment, Figure 1 The present application provides a method for forming a box of silicon-based liquid crystals, and the method for forming a box comprises the following steps 102 to 108:

[0049] Step 102 : providing a wafer substrate and a transparent glass substrate. The wafer substrate and / or the transparent glass substrate are coated with a sealant for bonding the wafer substrate and the transparent glass substrate.

[0050] Among them, the wafer substrate and the transparent glass substrate are both cleaned. The wafer substrate is configured with semiconductor device layers, such as a drive layer, a pixel layer, etc., and the transparent glass substrate is configured with ITO (Indium Tin Oxide, transparent conductive film). Optionally, it can also be configured with AR (Anti-Reflective Glass, anti-reflective film) stacked on the surface opposite to the surface where the ITO is located, which can make the transparent glass substrate have good conductivity, ultra-high light transmittance and ultra-bright color performance. The frame glue can be applied on the wafer substrate or the glass substrate by a dispensing machine, and the coating shape or pattern of the frame glue needs to be set according to the design requirements.

[0051] Step 104 , bonding the wafer substrate and the transparent glass substrate to form a primary box panel.

[0052] Among them, the above-mentioned bonding usually requires that the accessory to be bonded be attached to the convex portion of the curved cover plate by a bonding jig. In the present application, the accessory to be bonded can be the above-mentioned wafer substrate, and the curved cover plate can be the above-mentioned transparent glass substrate.

[0053] Step 106, pressing and curing the primary box panel to make the box thickness of the primary box panel reach the target box thickness.

[0054] Among them, box pressing and curing refers to evacuating the sealed cavity after the primary box panel is placed in the sealed cavity so that the vacuum pressure value in the sealed cavity gradually changes during the vacuuming process, wherein the vacuum pressure value in the sealed cavity is negatively correlated with the box thickness of the primary box panel, so the box thickness of the primary box panel can be adjusted by controlling the vacuum pressure value in the sealed cavity through box pressing and curing. Among them, the box thickness will affect the thickness of the liquid crystal layer of the target box panel, and the thickness of the liquid crystal layer will affect the light penetration, and then affect the response speed of the display panel prepared by the target box panel. When the thickness of the liquid crystal layer becomes larger, the response takes more time. When the response speed is abnormal, the picture projected by the display panel will have abnormal conditions such as afterimages, thereby affecting the contrast of the display color of the display panel. When the box thickness increases, the viewing angle range of the display panel will decrease. Therefore, preparing a target box panel with an ideal box thickness is particularly important for preparing a display panel with excellent display effect. In the present embodiment, the primary box panel is pressed and cured so that the box thickness of the primary box panel is the target box thickness. This enables timely adjustment of the box thickness during the box forming process, thereby reducing the need to release external pressure after box forming, further improving the flexibility of box preparation and facilitating the acquisition of a display panel with excellent effects.

[0055] Step 108, thermally curing the primary box-forming panel of the target box thickness to form a target box-forming panel.

[0056] Among them, thermal curing refers to the irreversible chemical reaction of thermosetting materials to crosslink polymer chains and form a rigid material. In the present application, the wafer substrate and the transparent glass substrate are more closely bonded by thermally curing the primary box panel. In the above-mentioned silicon-based liquid crystal box forming method, the wafer substrate and the transparent glass substrate are bonded to form a primary box panel; the primary box panel is pressed and cured so that the box thickness of the primary box panel is the target box thickness; the primary box panel with the target box thickness is thermally cured to form a target box panel. In the present application, the quality of the target box panel can be improved by pressing and curing the primary box panel formed by bonding the wafer substrate and the transparent glass substrate.

[0057] In one embodiment, Figure 2 The schematic diagram of the process of pressing and curing the primary box panel is shown; pressing and curing the primary box panel includes the following steps 202 to 206:

[0058] Step 202, providing a vacuum container.

[0059] Step 204, placing the primary box panel in the cavity of the vacuum container.

[0060] Among them, Figure 3 The schematic diagram of the structure of the vacuum container shown in the figure, the vacuum container is composed of an upper plate 310, a lower plate 320, a box pressing platform 330, a heating assembly 340, a fixed quick-locking screw 350, a vacuum pressure value meter 360 and a vacuum pipe 370. The fixed quick-locking screw 350 is used to fix the upper plate 310 and the lower plate 320 to form a cavity, and the cavity is used to place the primary box panel 380. The vacuum pressure value meter 360 is used to obtain the vacuum pressure value in the cavity; the vacuum pipe 370 is used to evacuate the cavity, wherein the position of the upper plate 310 corresponding to the cavity is in a sealed and transparent state. It can be understood that the above-mentioned vacuum container can also be a box pressing jig.

[0061] Step 206 , evacuate the cavity with a preset vacuum amplitude until the box thickness of the primary box panel reaches the target box thickness.

[0062] The cavity can be evacuated at a preset time with a preset vacuum amplitude, and the preset time can be set to 2 minutes to 30 minutes. The specific value of the preset time is negatively correlated with the above-mentioned vacuum amplitude.

[0063] In this embodiment, the primary box panel is placed in the cavity of the vacuum container, and the cavity is evacuated with a preset vacuum pressure value within a preset time through the vacuum evacuation pipeline of the vacuum container, so that the primary box panel in the cavity is pressed into a box during the vacuum evacuation process, and the box thickness of the primary box panel after being pressed into a box will change. After one vacuum evacuation, the box thickness of the primary box panel is measured. When the measured box thickness is greater than the target box thickness, the applied vacuum pressure value is incrementally adjusted with a preset step unit. On the basis of one vacuum evacuation, the primary box panel is vacuumed twice with the adjusted vacuum pressure value within a preset time until the box thickness of the primary box panel is the target box thickness. When the measured box thickness is less than the target box thickness, the applied vacuum pressure value is decrementally adjusted with a preset step unit. On the basis of one vacuum evacuation, the primary box panel is vacuumed twice with the adjusted vacuum pressure value within a preset time until the box thickness of the primary box panel is the target box thickness. Wherein, the preset step unit can be set according to the applied vacuum pressure value. Through the above process, the box thickness of the primary box panel can be flexibly controlled by adjusting the vacuum pressure value, so that the box thickness of the target box panel finally prepared meets the use requirements.

[0064] In one embodiment, Figure 4 The schematic diagram of the process of evacuating the cavity with a preset vacuuming amplitude is shown; evacuating the cavity with a preset vacuuming amplitude includes the following steps 402 to 404:

[0065] Step 402, detecting the vacuum pressure value in the cavity, and after the vacuum pressure value in the vacuum container meets a preset condition, detecting whether there are Newton rings on the surface of the transparent glass substrate.

[0066] The preset condition is that the vacuum pressure value is stable at a certain value. For example, the preset condition may be that the vacuum pressure value is stable at 0.1-1 Pa.

[0067] Whether Newton's rings exist on the surface of the transparent glass substrate can be detected by visual observation or by using a detection instrument.

[0068] Newton's rings, also known as "Newton circles". In optics, Newton's rings are a thin film interference phenomenon. An interference pattern of light is a series of concentric rings of light and dark. For example, when the convex surface of a convex lens with a large radius of curvature is in contact with a flat glass, under sunlight or when illuminated by white light, you can see that the contact point is a dark spot surrounded by some light and dark colored rings, while when illuminated by monochromatic light, it appears as some light and dark monochrome circles. The distances between these circles are not equal, and they gradually narrow as the distance from the center point increases. They are interference fringes formed by the interference of light reflected on the spherical surface and the plane surface.

[0069] Step 404, when Newton rings exist on the surface of the transparent glass substrate, the vacuuming amplitude of the vacuum container is adjusted until the Newton rings disappear and the box thickness of the primary box panel reaches the target box thickness.

[0070] Specifically, after the primary box panel is placed in a vacuum container, after the vacuum pressure value in the vacuum container meets the preset conditions (i.e., the vacuum pressure value is stable), the surface of the transparent glass substrate of the primary box panel can be observed by human eyes or a camera (taking pictures) to see whether Newton rings are generated. When Newton rings are present on the surface of the transparent glass substrate of the primary box panel, the vacuuming amplitude for vacuuming the cavity in the vacuum container is adjusted according to the preset step unit, thereby adjusting the vacuum pressure value in the vacuum container until the Newton rings disappear. After the Newton rings disappear, the vacuum pressure value corresponding to the disappearance moment is maintained for a period of time, so that the vacuum pressure value in the vacuum container meets the preset conditions (i.e., the vacuum pressure value is stable). The above-mentioned vacuuming amplitude can be -1Pa to -50Pa, and the step unit can be 1Pa.

[0071] In this embodiment, according to the principle of Newton's ring formation, when the transparent glass substrate or the wafer substrate is in a non-planar state, Newton's rings will be formed on the surface of the transparent glass substrate. By observing whether Newton's rings exist, it can be determined whether the transparent glass substrate and / or the wafer substrate has undergone different degrees of deformation during the vacuuming process. Therefore, when Newton's rings exist on the surface of the transparent glass substrate, the vacuum pressure value applied to the vacuum container is adjusted until the Newton's rings disappear, which can ensure that the deformation degree of the transparent glass substrate and the wafer substrate is consistent, and the box thickness of the target box panel is customized. It can be seen that the box forming method of the present application can visualize the preparation process, so that the performance of the target box panel obtained can be guaranteed.

[0072] In one embodiment, Figure 5 The schematic diagram of the process of heat curing the primary box panel of the target box thickness is shown; heat curing the primary box panel of the target box thickness to form the target box panel includes the following steps 502 to 504:

[0073] Step 502, the primary box panel of the target box thickness is irradiated by a light source to complete the initial thermal curing.

[0074] The specific light source is selected for irradiation according to the type of sealant used in the bonding process of the primary box panel. In this embodiment, UV sealant is used, so the light source can be UV light.

[0075] Step 504, placing the primary box-forming panel of the target box thickness after the initial thermal curing in an oven for secondary thermal curing; the primary box-forming panel of the target box thickness after the secondary thermal curing is the target box-forming panel.

[0076] The specific heating device is selected according to the type of frame glue used in the bonding process of the primary box panel. In this embodiment, heat-curing epoxy glue is also used, so the above-mentioned oven can be an N2 oven.

[0077] In this embodiment, UV glue and heat-curing epoxy glue are used to bond the wafer substrate and the transparent glass substrate. According to the material of the adhesive, UV light from various light sources can be used to irradiate the primary box panel of the target box thickness, so that the UV glue in the adhesive is cured, thereby preliminarily stabilizing the bonding point of the wafer substrate and the transparent glass substrate. Furthermore, since heat-curing epoxy glue is also used to bond the wafer substrate and the transparent glass substrate, it is necessary to place the primary box panel of the target box thickness after the initial heat curing in an N2 oven to gel the heat-curing epoxy glue, thereby enhancing the hardness of the bonding point between the wafer substrate and the transparent glass substrate, and making the bonding point between the wafer substrate and the transparent glass substrate more solid.

[0078] In one embodiment, Figure 6 The process diagram of bonding a wafer substrate and a transparent glass substrate is shown; the surface of the transparent glass substrate is provided with a transparent conductive film, and the wafer substrate includes a semiconductor device layer; bonding the wafer substrate and the transparent glass substrate includes the following steps 602 to 606:

[0079] Step 602, providing a bonding jig, wherein the bonding jig is provided with positioning posts and direction alignment points.

[0080] Step 604 , the wafer substrate is aligned with the positioning posts and the direction alignment points in the bonding fixture.

[0081] Among them, Figure 7 The structural schematic diagram of the bonding fixture shown in the figure includes a positioning column 710 and a direction alignment point 720, which can make the wafer substrate and the transparent glass substrate fit more neatly.

[0082] Step 606 , laminating the side of the transparent glass substrate where the transparent conductive film is disposed to the side of the wafer substrate where the semiconductor device layer is located.

[0083] The semiconductor device layer may be a driving layer.

[0084] In this embodiment, the wafer substrate 810 is placed on the positioning column 710 and the direction alignment point 720 in the bonding fixture, and the side of the transparent glass substrate 820 provided with the transparent conductive film 821 is bonded to the side of the semiconductor device layer (not shown in the figure) of the wafer substrate 810, so as to form a wafer substrate 810 as shown in FIG. Figure 8The primary box panel shown enables the transparent conductive film 821 and the semiconductor device layer of the above-mentioned primary box panel to be conductive, and controls the direction of the liquid crystal according to the power drive when an external power supply is connected, so that the target box panel prepared according to the primary box panel has better performance.

[0085] In one embodiment, when the box thickness of the primary box panel is the target box thickness, the vacuum pressure value in the cavity includes: 0.1Pa-50Pa.

[0086] It can be understood that the above-mentioned cavity is a sealed cavity in a vacuum container, and the positive air pressure value in the sealed cavity should not be too large, otherwise it will easily cause the primary box surface placed in the sealed cavity to be subjected to overload pressure and cause damage. At the same time, the vacuum container also has the risk of damage due to excessive internal and external pressure difference.

[0087] In this embodiment, when the box thickness of the primary box panel is the target box thickness, the vacuum pressure value in the cavity is between 0.1Pa and 50Pa, which can ensure that the vacuum pressure value in the cavity of the vacuum container is within a safe range when the primary box panel is pressed and cured.

[0088] In one embodiment, the box forming method further includes injecting liquid crystal into the bonding surface of the transparent glass substrate and the wafer substrate.

[0089] Optionally, after obtaining the target box panel, filling is performed to avoid damaging the liquid crystal molecules due to high curing temperature of the frame glue caused by thermal curing, and ion precipitation during the curing process of the frame glue due to incomplete curing of the frame glue, which may cause liquid crystal contamination.

[0090] Optionally, after obtaining the target box thickness, the primary box panel with the target box thickness is filled with crystals. The primary box panel with the target box thickness can be filled with crystals only when the material and process conditions are met. For example, in order to prevent the liquid crystal molecules from being destroyed due to high temperature, high temperature resistant liquid crystals can be selected. In order to prevent the liquid crystal from being contaminated, photoresist can be set at the boundary of the display area as a barrier before setting the frame glue to prevent the separation of spacers and cause the liquid crystal to be contaminated.

[0091] In this embodiment, the injection of liquid crystal into the bonding surface of the transparent glass substrate and the wafer substrate can be performed after the primary cell panel of the target cell thickness is thermally cured, thereby avoiding damage to the liquid crystal caused by the high temperature during thermal curing.

[0092] In one embodiment, before the transparent glass substrate and the wafer substrate form a primary box panel, the process further includes applying an alignment layer to the wafer substrate; and applying a sealant to the wafer substrate coated with the alignment layer.

[0093] The alignment layer coating method includes relief printing, spin coating, inkjet printing, etc.; in particular, in this embodiment, the alignment layer is coated by spin coating to ensure the uniformity of the alignment layer distribution.

[0094] The frame glue can be at least one of UV glue, thermosetting glue or a mixture of UV glue and thermosetting glue. In particular, the present embodiment uses a mixture of UV glue and thermosetting glue. The frame line width of the frame glue is 0.1 mm to 2 mm.

[0095] In this embodiment, before the transparent glass substrate and the wafer substrate form the primary box panel, the alignment layer is coated on the wafer substrate. Since the thicker the alignment layer is, the greater the loss voltage is, but the alignment layer can make the liquid crystal molecules discharge in the same direction, so as to ensure that when the target box panel is used for the display panel, the display effect of the display panel can be more uniform, the thickness of the alignment layer is controlled between 20nm and 100nm, especially 70nm, to ensure that the alignment layer does not produce excessive loss, while ensuring the beneficial effect of the alignment layer. The wafer substrate coated with the alignment layer is subjected to the frame glue coating process, so that the wafer substrate and the transparent glass substrate can be firmly attached.

[0096] In another embodiment, the wafer substrate and the transparent glass substrate may be bonded by UV glue or heat-curing epoxy glue. When the wafer substrate and the transparent glass substrate are bonded by heat-curing epoxy glue, the transparent glass substrate may be coated with an alignment layer before bonding the transparent glass substrate and the wafer substrate, and the transparent glass substrate coated with the alignment layer may be coated with heat-curing epoxy glue. In this process, the uniformity of the heat-curing epoxy glue may be ensured as much as possible. After the heat-curing epoxy glue is coated, the transparent glass substrate containing the heat-curing epoxy glue is pre-cured through a tunnel curing furnace to facilitate the heat-curing epoxy glue to fully infiltrate the surface of the transparent glass substrate, to facilitate the removal of low molecular volatiles generated by the curing reaction of the heat-curing epoxy glue and the volatile solvents remaining in the heat-curing epoxy glue layer, so as to facilitate the control of the thickness of the heat-curing epoxy glue layer. After the primary box panel is formed, the primary box panel is cured again through a tunnel curing furnace to allow the heat-curing epoxy glue to enter the gel process, that is, to change from a curing mixture to a viscous curing phase. Furthermore, the primary boxed panels that have been cured again through the tunnel curing furnace will be placed in the N2 oven for full curing, so that the thermosetting epoxy glue enters the solid stage to form a colloid with extremely high hardness, which can more firmly bond the wafer substrate and the transparent glass substrate.

[0097] Among them, the curing temperature of the tunnel curing furnace is in the range of 40 degrees Celsius to 80 degrees Celsius, and the curing time is in the range of 1 minute to 3 minutes.

[0098] It can be understood that the coating method of the alignment layer in this embodiment includes relief printing, spin coating, inkjet printing, etc. In particular, the alignment layer can be coated by spin coating to ensure the uniformity of the distribution of the alignment layer.

[0099] In one embodiment, Fig. 9 Another method for forming a cell of liquid crystal on silicon shown in the figure includes the following steps 902 to 920:

[0100] Step 902, clean the wafer substrate and the transparent glass substrate.

[0101] Step 904 , performing an alignment layer coating process on the wafer substrate by spin coating, wherein the thickness of the alignment layer ranges from 20 nm to 100 nm.

[0102] Step 906 , applying sealant to the wafer substrate coated with the alignment layer, wherein the sealant includes UV sealant and thermal curing epoxy sealant, wherein the frame line width of the sealant includes 0.1 mm to 2 mm.

[0103] Step 908 , the wafer substrate is aligned with the positioning posts and direction alignment points in the bonding fixture.

[0104] Step 910 , laminating the side of the transparent glass substrate where the transparent conductive film is disposed to the side of the wafer substrate where the driving layer is located.

[0105] Step 912, placing the primary box panel in the cavity of the vacuum container.

[0106] Step 914: after the vacuum pressure value in the vacuum container meets the preset condition, detect whether there are Newton rings on the surface of the transparent glass substrate.

[0107] Step 916, when Newton rings exist on the surface of the transparent glass substrate, the vacuuming amplitude of the vacuum container is adjusted until the Newton rings disappear and the box thickness of the primary box panel reaches the target box thickness.

[0108] Step 918, the primary box panel of the target box thickness is irradiated by a light source to complete the initial thermal curing.

[0109] Step 920, placing the primary box-forming panel of the target box thickness after the initial thermal curing in an oven for secondary thermal curing; the primary box-forming panel of the target box thickness after the secondary thermal curing is the target box-forming panel.

[0110] In this embodiment, the above method can realize the boxing of silicon-based liquid crystal through simple method steps, and the primary boxing panel is placed in the cavity of the vacuum container. After the vacuum pressure value in the vacuum container meets the preset conditions, it is detected whether Newton rings exist on the surface of the transparent glass substrate. When Newton rings exist on the surface of the transparent glass substrate, the vacuum amplitude of the vacuum container is adjusted until the Newton rings disappear, and the box thickness of the primary boxing panel is the target box thickness, so that the box thickness of the prepared target boxing panel can be visually controlled.

[0111] It should be understood that, although the various steps in the flowcharts involved in the above-mentioned embodiments are displayed in sequence according to the indication of the arrows, these steps are not necessarily executed in sequence according to the order indicated by the arrows. Unless there is a clear explanation in this article, the execution of these steps does not have a strict order restriction, and these steps can be executed in other orders. Moreover, at least a part of the steps in the flowcharts involved in the above-mentioned embodiments can include multiple steps or multiple stages, and these steps or stages are not necessarily executed at the same time, but can be executed at different times, and the execution order of these steps or stages is not necessarily to be carried out in sequence, but can be executed in turn or alternately with other steps or at least a part of the steps or stages in other steps.

[0112] Based on the same inventive concept, the embodiment of the present application also provides a silicon-based liquid crystal box-forming system for implementing the silicon-based liquid crystal box-forming method involved above. The implementation scheme for solving the problem provided by the system is similar to the implementation scheme recorded in the above method, so the specific limitations of one or more silicon-based liquid crystal box-forming system embodiments provided below can be referred to the limitations of the silicon-based liquid crystal box-forming method above, and will not be repeated here.

[0113] In one embodiment, Fig.10 The structural block diagram of the silicon-based liquid crystal box-forming system shown in FIG. 1 is a silicon-based liquid crystal box-forming system 100, and the silicon-based liquid crystal box-forming system 100 includes:

[0114] The bonding fixture 101 is provided with positioning posts and direction alignment points, which are used to align and bond the wafer substrate and the transparent glass substrate to form a primary box panel.

[0115] The vacuum container 102 includes an upper plate, a lower plate, and a heating assembly. When the upper plate and the lower plate are relatively arranged, a cavity for placing the primary box panel is formed between the upper plate and the lower plate. The vacuum container is used to evacuate the cavity with a preset vacuum amplitude, and heat the cavity through the heating assembly until the box thickness of the primary box panel reaches the target box thickness.

[0116] Among them, the upper plate and the lower plate can be transparent plates. Using transparent plates as the upper plate and the lower plate can facilitate users to observe the status of the primary box-forming panel in the vacuum container, which can further ensure that the primary box-forming panel obtains the target box thickness.

[0117] The heat curing device 103 is used to heat cure the primary box-forming panel of the target box thickness to form the target box-forming panel.

[0118] In this embodiment, the silicon-based liquid crystal box-forming system 100 includes a bonding jig 101, a vacuum container 102 and a heat curing device 103. A target box-forming panel with a target box thickness can be produced by a simple and feasible silicon-based liquid crystal box-forming system 100. Compared with the prior art, the use of a bonding machine and a flat-plate (airbag) hot press can be omitted, thereby simplifying the preparation system.

[0119] In one embodiment, the vacuum container is further used to evacuate the cavity with a preset vacuum amplitude until the box thickness of the primary box panel reaches the target box thickness; and to detect the vacuum pressure value in the cavity.

[0120] In one embodiment, the LCOS cell forming system further includes a detection device for detecting whether Newton's rings exist on the surface of the transparent glass substrate when the vacuum pressure value in the cavity meets a preset condition.

[0121] In one embodiment, the heat curing equipment is also used to irradiate the primary box panel of the target box thickness with a light source to complete the initial heat curing; the primary box panel of the target box thickness that has been initially heat cured is placed in an oven for secondary heat curing; the primary box panel of the target box thickness after the secondary heat curing is the target box panel.

[0122] In one embodiment, the silicon-based liquid crystal box forming system also includes a line drawing machine for performing an alignment layer coating process on a wafer substrate and / or a transparent glass substrate, and performing a frame glue coating process on a wafer substrate and / or a transparent glass substrate coated with an alignment layer.

[0123] In one embodiment, the present application provides a display panel, which includes a target cell-forming panel manufactured by the cell-forming method of silicon-based liquid crystal according to any of the above embodiments.

[0124] The technical features of the above embodiments may be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0125] The above-described embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the present application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the present application shall be subject to the attached claims.

Claims

1. A method for forming a cell of silicon-based liquid crystal, characterized in that: The box-forming method comprises: Providing a wafer substrate and a transparent glass substrate, wherein the wafer substrate and / or the transparent glass substrate is coated with a sealant for bonding the wafer substrate and the transparent glass substrate; Laminating the wafer substrate and the transparent glass substrate to form a primary box panel; Pressing and curing the primary box-forming panel so that the box thickness of the primary box-forming panel reaches the target box thickness; The primary box-forming panel of the target box thickness is thermally cured to form a target box-forming panel.

2. The box-forming method according to claim 1, characterized in that: The pressing and curing of the primary box panel comprises: Provide a vacuum container; Placing the primary box panel in the cavity of a vacuum container; The cavity is evacuated with a preset vacuum amplitude until the box thickness of the primary box panel reaches the target box thickness.

3. The box-forming method according to claim 2, characterized in that: The step of evacuating the cavity with a preset evacuation amplitude comprises: detecting a vacuum pressure value of the cavity, and when the vacuum pressure value of the cavity meets a preset condition, detecting whether Newton rings exist on the surface of the transparent glass substrate; When Newton rings exist on the surface of the transparent glass substrate, the vacuuming amplitude of the vacuum container is adjusted until the Newton rings disappear and the cell thickness of the primary cell panel reaches the target cell thickness.

4. The box-forming method according to claim 1, characterized in that: The step of thermally curing the primary box-forming panel of the target box thickness to form the target box-forming panel comprises: The primary box panel of the target box thickness is irradiated by a light source to complete the primary thermal curing; The primary box-forming panel of the target box thickness after the initial heat curing is placed in an oven for secondary heat curing; the primary box-forming panel of the target box thickness after the secondary heat curing is the target box-forming panel.

5. The box-forming method according to claim 1, characterized in that: The surface of the transparent glass substrate is provided with a transparent conductive film, and the wafer substrate includes a semiconductor device layer; and bonding the wafer substrate and the transparent glass substrate comprises: Providing a laminating jig, wherein the laminating jig is provided with a positioning column and a direction alignment point; Aligning the wafer substrate with the positioning posts and the direction alignment points in the bonding fixture; The side of the transparent glass substrate provided with the transparent conductive film is bonded to the side of the wafer substrate where the semiconductor device layer is located.

6. The box-forming method according to claim 2, characterized in that: When the box thickness of the primary box panel is the target box thickness, the vacuum pressure value in the cavity includes: 0.1Pa~50Pa.

7. The box-forming method according to claim 1, characterized in that: Before the transparent glass substrate and the wafer substrate form a primary box panel, the method further includes: Performing an alignment layer coating process on the wafer substrate and / or the transparent glass substrate; A sealant with a preset pattern is applied to the wafer substrate coated with the alignment layer and / or the transparent glass substrate.

8. The box-forming method according to claim 1 or 7, characterized in that: The box forming method further comprises: Liquid crystal is injected into a cavity formed by bonding the frame glue, the bonding surface of the transparent glass substrate and the bonding surface of the wafer substrate.

9. A silicon-based liquid crystal box system, characterized in that: The silicon-based liquid crystal box forming system comprises: A bonding jig is provided with positioning posts and direction alignment points, wherein the positioning posts and direction alignment points are used to align and bond the wafer substrate and the transparent glass substrate to form a primary box panel; A vacuum container, comprising an upper plate, a lower plate, and a heating assembly, wherein when the upper plate and the lower plate are arranged relative to each other, a cavity for placing the primary box panel is formed between the upper plate and the lower plate, and the vacuum container is used to evacuate the cavity with a preset vacuuming amplitude, and heat the cavity by the heating assembly until the box thickness of the primary box panel reaches a target box thickness; The heat curing device is used for heat curing the primary box-forming panel of the target box thickness to form the target box-forming panel.

10. A display panel, characterized in that: A target box-forming panel obtained by the box-forming method of silicon-based liquid crystal according to any one of claims 1 to 8.

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