Ion beam detection device, ion beam detection method and ion implantation equipment

Abstract

The invention relates to an ion beam detection device, an ion beam detection method and ion implantation equipment. The ion beam detection device comprises an ion beam deflection unit, a first Faraday detection unit and a processing unit. The ion beam deflection unit is provided with an ion beam transmission channel and used for controlling the ion beam in the ion beam transmission channel to be emitted in the target direction. The first Faraday detection unit is located on the ion beam emitting side of the ion beam deflection unit and used for reciprocating in the second direction and obtaining a first ion beam waveform in at least one detection period when the target direction is the same as the first direction and a second ion beam waveform in at least one detection period when the target direction deflects relative to the first direction. And the processing unit is connected with the first Faraday detection unit and is configured to compare the waveform difference between the first ion beam waveform and the second ion beam waveform so as to determine the real injection energy of the ion beam according to the waveform difference. The method is used for accurately measuring the real injection energy of the ion beam.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to an ion beam detection device and an ion beam detection method, and an ion implantation device. Background Art

[0002] Ion implantation is one of the important process steps in semiconductor manufacturing, which directly determines the conductivity and capacity of the device. The three most critical parameters in the ion implantation process are the ion beam implantation amount, ion beam implantation angle and ion beam implantation energy. However, the ion beam implantation energy is directly related to the implantation depth of the ion implantation process. Summary of the invention

[0003] Based on this, the embodiments of the present application provide an ion beam detection device and an ion beam detection method, and an ion implantation device, which can accurately measure the actual implantation energy of the ion beam to ensure that the actual implantation energy of the ion beam is within the acceptable range of the process, thereby helping to improve product yield. At the same time, it has strong applicability and scalability, and can be widely used in various ion implantation processes.

[0004] In order to achieve the above-mentioned purpose, on the one hand, some embodiments of the present application provide an ion beam detection device, including an ion beam deflection unit, a first Faraday detection unit and a processing unit. The ion beam deflection unit has an ion beam transmission channel for controlling the ion beam in the ion beam transmission channel to be emitted along a target direction. The ion beam transmission channel extends along a first direction, and the target direction is the same as the first direction or is deflected relative to the first direction. The first Faraday detection unit is located on one side of the ion beam emitted by the ion beam deflection unit, and is used to reciprocate along a second direction, and obtain a first ion beam waveform within at least one detection cycle when the target direction is the same as the first direction, and a second ion beam waveform within at least one detection cycle when the target direction is deflected relative to the first direction. The second direction intersects with the first direction. The processing unit is connected to the first Faraday detection unit and is configured to: compare the waveform difference between the first ion beam waveform and the second ion beam waveform, so as to determine the actual injection energy of the ion beam based on the waveform difference.

[0005] In some embodiments of the present application, the ion beam deflection unit includes: a cavity and a wire winding. The cavity has an ion beam transmission channel extending in a trumpet shape along a first direction. The wire winding is insulated and wound around the outer wall of the cavity, and is used to form a magnetic field in the ion beam transmission channel after power is turned on.

[0006] In some embodiments of the present application, the first Faraday detection unit includes: a first Faraday sensor and a driving mechanism. The first Faraday sensor has a slit facing the ion beam deflection unit. The driving mechanism is connected to the first Faraday sensor and is used to drive the first Faraday sensor to reciprocate along the second direction.

[0007] In some embodiments of the present application, the first Faraday detection unit further includes an encoder. The encoder is connected to the driving mechanism and / or the first Faraday sensor and is configured to record the moving position of the first Faraday sensor.

[0008] In some embodiments of the present application, the ion beam detection device further includes: a second Faraday detection unit. The second Faraday detection unit includes: a horizontal detection unit and a vertical detection unit respectively located on two adjacent sides of the target wafer. The horizontal detection unit is used to obtain the rotation position of the vertical detection unit and the corresponding third ion beam waveform when the vertical detection unit rotates up and down along the second direction for at least one detection cycle. The vertical detection unit is used to obtain the rotation position of the horizontal detection unit and the corresponding fourth ion beam waveform when the horizontal detection unit rotates left and right along the first direction for at least one detection cycle.

[0009] Correspondingly, the processing unit is also connected to the second Faraday detection unit and is configured to: analyze whether the third ion beam waveform and / or the fourth ion beam waveform has a reversal point, so as to determine the actual deflection angle of the ion beam relative to the target wafer in response to the rotation position corresponding to the reversal point.

[0010] In some embodiments of the present application, the vertical detection unit rotates up and down along the second direction within the detection period within a range of -60° to +90°. The horizontal detection unit rotates left and right along the first direction within the detection period within a range of -90° to +90°.

[0011] On the other hand, the present application also provides an ion beam detection method according to some embodiments, which is applied to the ion beam detection device in the above embodiments. The ion beam detection method includes the following steps.

[0012] Acquire a first ion beam waveform within at least one detection cycle; the first ion beam waveform is an ion beam waveform acquired when the first Faraday detection unit reciprocates along the second direction when the ion beam deflection unit controls the ion beam in the ion beam transmission channel to emit along the first direction; the first direction is the extension direction of the ion beam transmission channel.

[0013] Acquire a second ion beam waveform within at least one detection cycle; the second ion beam waveform is an ion beam waveform acquired by the first Faraday detection unit reciprocating along the second direction when the ion beam in the ion beam transmission channel is deflected relative to the first direction and then emitted.

[0014] A waveform difference between the first ion beam waveform and the second ion beam waveform is determined.

[0015] The actual implantation energy of the ion beam is determined based on the waveform difference.

[0016] In some embodiments of the present application, the actual injection energy of the ion beam is determined based on the waveform difference, including: if the first ion beam waveform and the second ion beam waveform are relatively shifted and the two waveforms are the same or the waveform difference between the two is less than or equal to a first target threshold, then the actual injection energy of the ion beam meets the process target; if the first ion beam waveform and the second ion beam waveform are relatively shifted and the waveform difference between the two is greater than the second target threshold, then the actual injection energy of the ion beam does not meet the process target, and an ion beam energy adjustment signal is output.

[0017] In some embodiments of the present application, the ion beam detection method further includes the following steps.

[0018] Acquire the rotation position of the vertical detection unit within at least one detection cycle and the corresponding third ion beam waveform; the third ion beam waveform is the ion beam waveform acquired by the horizontal detection unit when the vertical detection unit rotates up and down along the second direction; the second Faraday detection unit includes the horizontal detection unit and the vertical detection unit respectively located on two adjacent sides of the target wafer; the second direction intersects with the first direction.

[0019] The rotation position of the horizontal detection unit and the corresponding fourth ion beam waveform within at least one detection cycle are acquired; the fourth ion beam waveform is the ion beam waveform acquired by the vertical detection unit when the horizontal detection unit rotates left and right along the first direction.

[0020] The third ion beam waveform and / or the fourth ion beam waveform are analyzed to determine whether they have a reversal point, and a real deflection angle of the ion beam relative to the target wafer is determined in response to a rotation position corresponding to the reversal point.

[0021] On the other hand, the present application also provides an ion beam detection device according to some embodiments, including a second Faraday detection unit and a processing unit. The second Faraday detection unit includes: a horizontal detection unit and a vertical detection unit respectively located on two adjacent sides of the target wafer. The horizontal detection unit is used to obtain the rotation position of the vertical detection unit and the corresponding third ion beam waveform when the vertical detection unit rotates up and down in the vertical direction for at least one detection cycle. The vertical detection unit is used to obtain the rotation position of the horizontal detection unit and the corresponding fourth ion beam waveform when the horizontal detection unit rotates left and right in the horizontal direction for at least one detection cycle. The processing unit is connected to the second Faraday detection unit and is configured to: analyze whether the third ion beam waveform and / or the fourth ion beam waveform has a reversal point, so as to determine the actual deflection angle of the ion beam relative to the target wafer in response to the rotation position corresponding to the reversal point.

[0022] On the other hand, the present application also provides an ion beam detection method according to some embodiments, which is applied to the ion beam detection device in the above embodiments. The ion beam detection method includes the following steps.

[0023] Acquire the rotation position of the vertical detection unit within at least one detection cycle and the corresponding third ion beam waveform; the third ion beam waveform is the ion beam waveform acquired by the horizontal detection unit when the vertical detection unit rotates up and down in the vertical direction; the second Faraday detection unit includes the horizontal detection unit and the vertical detection unit respectively located on two adjacent sides of the target wafer.

[0024] The rotation position of the horizontal detection unit and the corresponding fourth ion beam waveform within at least one detection cycle are acquired; the fourth ion beam waveform is the ion beam waveform acquired by the vertical detection unit when the horizontal detection unit rotates left and right along the horizontal direction.

[0025] The third ion beam waveform and / or the fourth ion beam waveform is analyzed to determine whether they have a reversal point, and a real deflection angle of the ion beam relative to the target wafer is determined in response to a rotation position corresponding to the reversal point.

[0026] On the other hand, the present application also provides an ion implantation device according to some embodiments, including the ion beam detection device as described in any of the above embodiments.

[0027] The embodiments of the present application may or at least have the following advantages:

[0028] In the embodiment of the present application, the ion beam is controlled to deflect or not deflect in its ion beam transmission channel by the ion beam deflection unit, and the first ion beam waveform when the ion beam is not deflected and the second ion beam waveform after the ion beam is deflected are obtained by the first Faraday detection unit, and then the processing unit can compare the waveform difference between the first ion beam waveform and the second ion beam waveform, and determine the real injection energy of the ion beam according to the waveform difference. In this way, the ion beam detection device provided in the embodiment of the present application can monitor the real injection energy of the ion beam online. The embodiment of the present application takes into account the ion beam energy changes at the macroscopic and microscopic angles, and can accurately measure the real injection energy of the ion beam to ensure that the real injection energy of the ion beam is within the acceptable range of the process, thereby helping to improve the product yield. In addition, the ion beam deflection unit and the first Faraday detection unit in the embodiment of the present application can operate independently and cooperate with each other. The embodiment of the present application can arbitrarily lock the ion beam injection energy (especially the purity of the energy) required by the process, has strong applicability and ductility, and can be widely used in various ion implantation processes (especially high-end processes).

[0029] The details of one or more embodiments of the present application are set forth in the following drawings and description. Other features, objects, and advantages of the present application will become apparent from the description, drawings, and claims. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0031] Figure 1 is a schematic structural diagram of an ion beam detection device provided in some embodiments;

[0032] Figure 2 is a schematic structural diagram of an ion beam deflection unit provided in some embodiments;

[0033] Figure 3 for Figure 2 A schematic diagram of a state in which an ion beam is deflected upward in an ion beam deflection unit shown;

[0034] Figure 4 for Figure 2 A schematic diagram of a state in which an ion beam is deflected downward in an ion beam deflection unit shown;

[0035] Figure 5 is a schematic structural diagram of a first Faraday detection unit provided in some embodiments;

[0036] Figure 6 is a schematic structural diagram of an ion beam incident end face in a first Faraday sensor provided in some embodiments;

[0037] Figure 7 A schematic diagram of a state where a first Faraday detection unit is located at different moving positions relative to an ion beam deflection unit provided in some embodiments;

[0038] Figure 8 is a schematic diagram of a first ion beam waveform provided in some embodiments;

[0039] Fig. 9 A schematic diagram of an ion beam deflection path provided in some embodiments;

[0040] Fig.10 A waveform comparison schematic diagram of a first ion beam waveform and a second ion beam waveform provided in some embodiments;

[0041] Fig.11 A waveform comparison schematic diagram of another first ion beam waveform and a second ion beam waveform provided in some embodiments;

[0042] Fig.12 is a schematic side view of another ion beam detection device provided in some embodiments;

[0043] Fig.13 A schematic diagram of a three-dimensional structure of another ion beam detection device provided in some embodiments;

[0044] Fig.14 A schematic diagram of the distribution of rotation angles of a vertical detection unit provided in some embodiments;

[0045] Fig.15 is a waveform schematic diagram of a fourth ion beam waveform provided in some embodiments;

[0046] Fig.16 A waveform schematic diagram of a fourth ion beam waveform when a rotation angle deviation between a second Faraday detection unit and an ion beam is greater than 5° provided in some embodiments;

[0047] Fig.17 A waveform schematic diagram of a fourth ion beam waveform when a rotation angle deviation between a second Faraday detection unit and an ion beam is less than -5° provided in some embodiments;

[0048] Fig.18 A schematic flow chart of an ion beam detection method provided in some embodiments;

[0049] Fig.19 A schematic flow chart of another ion beam detection method provided in some embodiments.

[0050] Description of reference numerals:

[0051] 1-ion beam deflection unit, 10-ion beam transmission channel, 11-cavity, 12-wire winding, 2-first Faraday detection unit, 21-first Faraday sensor, 211-slit, 22-driving mechanism, 221-telescopic assembly, 222-driving motor, 23-encoder, 3-processing unit, 4-second Faraday detection unit, 41-horizontal detection unit, 42-vertical detection unit, 5-wafer carrier plate, 51-hollow connecting tube, 6-target wafer. DETAILED DESCRIPTION

[0052] In order to facilitate understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. The preferred embodiments of the present application are given in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present application more thorough and comprehensive.

[0053] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application.

[0054] It should be understood that when an element or layer is referred to as being "on," "adjacent to," or "connected to" other elements or layers, it may be directly on, adjacent to, connected to, or coupled to other elements or layers, or there may be intervening elements or layers. It should be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers, doping types, and / or portions, these elements, components, regions, layers, doping types, and / or portions should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer, doping type, or portion from another element, component, region, layer, doping type, or portion. Therefore, without departing from the teachings of the present application, the first element, component, region, layer, doping type, or portion discussed below may be represented as a second element, component, region, layer, or portion.

[0055] When used herein, the singular forms "a", "an", and "said / the" may also include plural forms, unless the context clearly indicates otherwise. It should also be understood that when the terms "consisting of" and / or "comprising" are used in this specification, the presence of the features, integers, steps, operations, elements and / or parts can be determined, but the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups is not excluded. At the same time, when used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0056] The ion beam implantation energy is directly related to the implantation depth of the ion implantation process. At present, as the size of devices is getting smaller and smaller, the device manufacturing process has more and more precise requirements for the ion implantation depth. For example, too deep ion implantation will cause the position that should not be conductive to be implanted, resulting in uncontrollable device opening; while too shallow ion implantation will often result in insufficient conductive channels, causing the device to be unable to turn on at the turn-on voltage.

[0057] In the related art, the energy of the ion beam depends on the potential difference between the ion beam and the target wafer before implantation. In theory, the potential difference between the ion beam and the target wafer before implantation can be used to characterize the implantation energy of the ion beam, and the change and fluctuation of the ion beam implantation energy is consistent with the change and fluctuation of the corresponding potential difference. Therefore, in the related art, the implantation energy of the ion beam is often obtained by measuring the potential difference between the potential device on the machine (such as the ion beam emission end) and the ground.

[0058] However, the applicant has found that, from a microscopic perspective, the ion beam will experience scattering, sputtering, collision, mutual repulsion and attraction during transmission, which makes the actual injection energy of the ion beam inconsistent with the preset potential difference. For example, when the ion beam is accelerated and focused, it is easy to gain or release energy due to various fields generated by itself and / or the environment, but these energies are not controllable, and these energy changes of the ion beam will also be injected into the target wafer to a certain extent, resulting in poor controllability of the process device, thus becoming a bottleneck for improving product yield in high-end processes.

[0059] Based on this, the embodiments of the present application provide an ion beam detection device and an ion beam detection method, and an ion implantation device, which can accurately measure the actual implantation energy of the ion beam to ensure that the actual implantation energy of the ion beam is within the acceptable range of the process, thereby helping to improve product yield. At the same time, it has strong applicability and scalability, and can be widely used in various ion implantation processes.

[0060] See also Figure 1 The ion beam detection device provided in some embodiments of the present application includes an ion beam deflection unit 1, a first Faraday detection unit 2 and a processing unit 3.

[0061] The ion beam deflection unit 1 has an ion beam transmission channel for controlling the ion beam in the ion beam transmission channel to be emitted along a target direction. The ion beam transmission channel extends along a first direction (e.g., X direction), and the target direction is the same as the first direction (e.g., X direction) or is deflected relative to the first direction (e.g., X direction).

[0062] The first Faraday detection unit 2 is located on one side of the ion beam emitted by the ion beam deflection unit 1, and is used to reciprocate along the second direction (for example, the Y direction), and obtain the first ion beam waveform within at least one detection period when the target direction is the same as the first direction (for example, the X direction), and the second ion beam waveform within at least one detection period when the target direction is deflected relative to the first direction (for example, the X direction).

[0063] Here, the second direction (eg, the Y direction) intersects with, eg, is orthogonal to, the first direction (eg, the X direction).

[0064] For example, the first direction (eg, X direction) is a horizontal direction, and the second direction (eg, Y direction) is a vertical direction.

[0065] Please continue reading Figure 1 The processing unit 3 is connected to the first Faraday detection unit 2 and is configured to compare the waveform difference between the first ion beam waveform and the second ion beam waveform to determine the actual injection energy of the ion beam according to the waveform difference.

[0066] In the embodiment of the present application, the ion beam is controlled to be deflected or not deflected in its ion beam transmission channel by the ion beam deflection unit 1, and the first ion beam waveform when the ion beam is not deflected and the second ion beam waveform after the ion beam is deflected are obtained by the first Faraday detection unit 2, and then the processing unit 3 can compare the waveform difference between the first ion beam waveform and the second ion beam waveform, and determine the actual injection energy of the ion beam according to the waveform difference. In this way, the ion beam detection device provided in the embodiment of the present application can be used as an actual beam injection energy monitoring system (Actual Beam Energy Monitor System, referred to as ABEMS) to monitor the actual injection energy of the ion beam online. The embodiment of the present application takes into account the changes in ion beam energy at both macroscopic and microscopic angles, and can accurately measure the actual injection energy of the ion beam to ensure that the actual injection energy of the ion beam is within the acceptable range of the process, thereby helping to improve the product yield.

[0067] Moreover, the ion beam deflection unit 1 and the first Faraday detection unit 2 in the embodiment of the present application can operate independently and cooperate with each other. The embodiment of the present application can arbitrarily lock the ion beam injection energy (especially the purity of energy) required by the process, has strong applicability and ductility, and can be widely used in various ion injection processes (especially high-end processes).

[0068] See also Figure 2 In some embodiments of the present application, the ion beam deflection unit 1 includes: a cavity 11 and a wire winding 12. The cavity 11 has an ion beam transmission channel 10 extending in a trumpet shape along a first direction (for example, the X direction). The wire winding 12 is insulated and wound around the outer wall of the cavity 11, and is used to form a magnetic field in the ion beam transmission channel 10 after power is turned on. The wires of adjacent turns in the wire winding 12 are insulated from each other.

[0069] It can be understood that the above-mentioned ion beam deflection unit 1, as an energy magnetic field unit (EMU), can realize ion beam deflection control in any direction by changing the winding direction of the wire winding 12 and the current direction when energized, so as to adapt to different spaces of the cavity 11. Specifically, according to Ampere's law, after direct current is passed through the wire winding 12 in the ion beam deflection unit 1, the wire winding 12 forms a magnetic field in the ion beam transmission channel 10. According to the current direction in the wire winding 12 and the direction of the thumb, the N pole of the magnetic field can be determined. When the current direction in the wire winding 12 changes, the N pole of the magnetic field also changes accordingly.

[0070] Correspondingly, according to the left-hand rule, charged particles moving in a magnetic field will be deflected.

[0071] For example, Figure 3As shown in FIG. 1 , the ion beam deflection unit 1 controls the ion beam to deflect upward along the second direction (for example, the Y direction). At this time, the magnetic field generated by the wire winding 12 after being energized is as follows: Figure 3 As shown in , the charged ion beam can be deflected upward under the action of the magnetic field when passing through the ion beam deflection unit 1. When the electron mass m, the electron velocity v (controlled by the energy of the charged particles) and the electron charge q are all unchanged, the deflection radius r is inversely proportional to the magnetic field strength. That is, by controlling the magnetic field strength, the deflection radius of the ion beam can be controlled accordingly. The magnetic field formula in the wire winding 12 is: B=μ0·n·I, where μ0 is the magnetic permeability in vacuum, n is the number of wire turns per unit area, and I is the wire current. Since the magnetic permeability μ0 in vacuum and the number of wire turns per unit area n are constant, by controlling the wire current I, the magnetic field strength can be controlled accordingly, and then the deflection radius of the ion beam can be controlled.

[0072] In other examples, such as Figure 4 As shown in , by changing the current direction in the wire winding 12 , the ion beam deflection unit 1 can control the ion beam to deflect downward along the second direction (eg, the Y direction).

[0073] See also Figure 5 and Figure 6 In some embodiments of the present application, the first Faraday detection unit 2 includes: a first Faraday sensor 21 and a driving mechanism 22. The first Faraday sensor 21 has a slit 211 facing the ion beam deflection unit 1. The driving mechanism 22 is connected to the first Faraday sensor 21, and is used to drive the first Faraday sensor 21 to reciprocate along the second direction (for example, the Y direction).

[0074] For example, the first Faraday sensor 21 includes but is not limited to a Faraday Cup. The detection principle of the first Faraday sensor 21 can be expressed as follows: positive ions are neutralized with electrons after entering the first Faraday sensor 21, so that a real-time current is displayed on the ammeter, and the current represents the size of the ion beam. The waveform change of the ion beam can be characterized by the current change.

[0075] In some examples, the length L of the first Faraday sensor 21 is greater than the diameter of the target wafer. Taking a 12-inch target wafer as an example, the length L of the first Faraday sensor 21 ranges from 280 mm to 360 mm; the length L can be, for example, 280 mm, 290 mm, 300 mm, 320 mm, 350 mm, or 360 mm.

[0076] In some examples, the height of the slit 211 in the first Faraday sensor 21 ranges from 0.1 mm to 10 mm; the height may be, for example, 0.1 mm, 0.5 mm, 1 mm, 2 mm, 5 mm, 8 mm, or 10 mm. The smaller the height of the slit 211, the higher the measurement accuracy of the first Faraday sensor 21. However, it is understandable that if the height of the slit 211 is too small, it is easy to cause pressure on design and maintenance. Therefore, the height of the slit 211 can be reasonably selected according to the matching requirements.

[0077] For example, the driving mechanism 22 includes a telescopic assembly 221 connected to the first Faraday sensor 21, and a driving motor 222 connected to the telescopic assembly 221. When the driving motor 222 rotates, the telescopic assembly 221 can drive the first Faraday sensor 21 to move at a uniform speed in the second direction (eg, Y direction).

[0078] Please continue reading Figure 5 In some embodiments of the present application, the first Faraday detection unit 2 further includes an encoder 23. The encoder 23 is connected to the driving mechanism 22 and / or the first Faraday sensor 21, and is configured to record the moving position of the first Faraday sensor 21.

[0079] For example, the encoder 23 is disposed at the driving end of the driving motor 222 in the driving mechanism 22 , and can record the moving position of the first Faraday sensor 21 through the driving output of the driving electrode 222 .

[0080] Please combine Figure 7 As can be understood from Figures (a), (b) and (c) in the figure, the driving mechanism 22 drives the first Faraday sensor 21 to move from bottom to top from the initial position along the second direction (eg, the Y direction), wherein: Figure 7 Figure (a) is a schematic diagram of the state when the first Faraday sensor 21 is located at the initial position; Figure 7 FIG. (b) is a schematic diagram of the state when the first Faraday sensor 21 is located at the target position. At this time, the ion beam can pass through the slit 211 and enter the first Faraday sensor 21, and the first Faraday sensor 21 detects the ion beam waveform; Figure 7 Figure (c) is a schematic diagram of the state when the first Faraday sensor 21 is at the extreme position. At this time, the first Faraday sensor 21 stops moving and can move back to the initial position along the second direction (for example, the Y direction). That is, this moment is also the reversal point P in the subsequent ion beam waveform diagram.

[0081] Understandable, see Figure 7 In FIG. 5( c ), when the first Faraday sensor 21 is located at the extreme position, the extension line of the graphite wire in the first Faraday sensor 21 along the first direction (eg, X direction) needs to be higher than the top of the ion beam deflection unit 1 .

[0082] To facilitate description of the working principle of the ion beam detection device in the above embodiments, some of the following embodiments are described in detail by taking the example of the ion beam deflection unit 1 controlling the ion beam to deflect upward along the second direction (eg, the Y direction).

[0083] Please combine Figure 8~Figure 10 It is understood that when the wire winding 12 in the ion beam deflection unit 1 is not energized, the ion beam transmission path remains unchanged and can be emitted from the ion beam deflection unit 1 along the first direction (for example, the X direction). The first Faraday detection unit 2 can obtain the first ion beam waveform F1 within a detection period T as shown in FIG. Figure 8 and Fig.10 As shown in Figure (a).

[0084] On this basis, the wire winding 12 in the ion beam deflection unit 1 is energized to generate a magnetic field B in the ion beam transmission channel 10, and the magnetic field B is controlled by the wire current I in the wire winding 12. The first Faraday detection unit 2 can obtain a second ion beam waveform F2 in a detection period T as shown in FIG. Fig.10 As shown in Figure (b).

[0085] It can be understood that the ion beam deflection radius r satisfies the formula: r=mv / Bq, where m is the electron mass, v is the electron velocity, and q is the electron charge. Since m, v, B, and q are all known, the ion beam deflection radius r is also known. Assuming that the injection energy of all ion beams is the same, then Fig.10 As shown in , after the ion beam is deflected, the starting position of the second ion beam waveform F2 that can be obtained by the first Faraday detection unit 2 within a detection period T should be the position where the starting position of the first ion beam waveform F1 is translated by a distance H. Fig. 9 Understand that sinα=L / r; H=L×tanα; where the distance L and the deflection radius r are known, then the distance H is determined.

[0086] In some embodiments, if by comparing the waveform difference between the first ion beam waveform F1 and the second ion beam waveform F2, it is found that only relative translation occurs between the first ion beam waveform F1 and the second ion beam waveform F2 and the two waveforms are the same or the waveform difference between the two is less than or equal to the first target threshold, it can be determined that the actual implantation energy of the ion beam meets the process target. The first target threshold includes but is not limited to 1%.

[0087] Here, the smaller the first target threshold is, the stricter the purity detection of the ion beam implantation energy by the ion beam detection device is. The value of the first target threshold can determine the purity detection accuracy of the ion beam implantation energy to achieve purity control of the ion beam implantation energy.

[0088] If, by comparing the waveform difference between the first ion beam waveform F1 and the second ion beam waveform F2, it is found that a relative translation has occurred between the first ion beam waveform F1 and the second ion beam waveform F2 and the waveform difference between the two is greater than the second target threshold, then the actual injection energy of the ion beam does not meet the process target, and an ion beam energy adjustment signal needs to be output so that the machine can readjust the injection energy of the ion beam in response to the ion beam energy adjustment signal until the actual injection energy of the ion beam (i.e., energy purity) meets the process target.

[0089] Illustratively, the second target threshold is the same as the first target threshold, or the second target threshold is greater than the first target threshold.

[0090] For example, see Fig.11 , there is a relative translation between the first ion beam waveform F1 and the second ion beam waveform F2, and the waveform difference between the two is greater than the second target threshold. This proves that the deflection radius of the ion beam corresponding to the second ion beam waveform F2 has changed. Since the electron mass m, electron charge q and magnetic field B have not changed, it can be uniquely determined that the waveform change of the second ion beam waveform F2 is derived from the change of the electron velocity v, and the change of the electron velocity v can represent the change of the real injection energy of the ion beam.

[0091] See also Fig.12 and Fig.13 In some embodiments of the present application, the ion beam detection device further includes: a second Faraday detection unit 4. The second Faraday detection unit 4 includes: a horizontal detection unit 41 and a vertical detection unit 42 respectively located on two adjacent sides of the target wafer 6. The horizontal detection unit 41 is used to obtain the rotation position of the vertical detection unit 42 and the corresponding third ion beam waveform when the vertical detection unit 42 rotates up and down along the second direction (for example, the Y direction) for at least one detection cycle. The vertical detection unit 42 is used to obtain the rotation position of the horizontal detection unit 41 and the corresponding fourth ion beam waveform when the horizontal detection unit 41 rotates left and right along the first direction (for example, the X direction) for at least one detection cycle.

[0092] Here, the vertical detection unit 42 rotates up and down along the second direction (for example, the Y direction) and the horizontal detection unit 41 rotates left and right along the first direction (for example, the X direction), both of which can be performed independently, or the second Faraday detection unit 4 can be rotated as a whole, which is not limited in this embodiment of the present application.

[0093] Correspondingly, the processing unit 3 is also connected to the second Faraday detection unit 4 and is configured to: analyze whether the third ion beam waveform and / or the fourth ion beam waveform has a reversal point, so as to determine the actual deflection angle of the ion beam relative to the target wafer 6 in response to the rotation position corresponding to the reversal point.

[0094] In the embodiment of the present application, the rotation position of the vertical detection unit 4 and the corresponding third ion beam waveform are obtained through the horizontal detection unit 41, and the rotation position of the horizontal detection unit 41 and the corresponding fourth ion beam waveform are obtained through the vertical detection unit 42, and then the processing unit 3 can analyze whether the third ion beam waveform and / or the fourth ion beam waveform has a reversal point, so as to determine the real deflection angle of the ion beam relative to the target wafer 6 in response to the rotation position corresponding to the reversal point. Compared with the ion beam injection angle characterized by a single ion beam angle in the related art, the ion beam detection device provided in the embodiment of the present application can monitor the real deflection angle of the ion beam relative to the target wafer 6 online, so as to perform linkage detection and compensation for the real injection angle between the ion beam and the target wafer 6, thereby filling the gap in the industry, which is conducive to further improving the product yield and has strong applicability and ductility, and can be widely used in various ion injection processes (especially high-end processes).

[0095] In some examples, the horizontal detection unit 41 and the vertical detection unit 42 both include: a Faraday sensor, a driving mechanism, and an encoder. The Faraday sensor has a slit for capturing an ion beam, including but not limited to a Faraday cup; the driving mechanism is connected to the Faraday sensor and is used to drive the Faraday sensor to rotate; the encoder is connected to the driving mechanism and / or the Faraday sensor and is configured to record the rotational position of the Faraday sensor.

[0096] It can be understood that when the driving mechanism has both the up and down movement function and the rotation function, the aforementioned first Faraday detection unit 2 and the horizontal detection unit 41 can share the same detection unit.

[0097] Optionally, the encoder 23 in the first Faraday detection unit 2 and the encoders in the vertical detection unit 42 and the horizontal detection unit 41 can be independently provided respectively, or can be integrated as one.

[0098] In addition, please refer to Fig.13 , the target wafer 6 is carried on the wafer carrier plate 5. The wafer carrier plate 5 is usually placed vertically and has a hollow connecting tube 51. Accordingly, the horizontal detection unit 41 and the vertical detection unit 42 can be rotatably installed in a designated area of ​​the wafer carrier plate 5, for example, located beside the wafer carrier plate 5 and close to the back of the wafer carrier plate 5, wherein the horizontal detection unit 41 is placed extending in the horizontal direction, and the vertical detection unit 42 is placed extending in the vertical direction. The signal line connecting the horizontal detection unit 41 and the vertical detection unit 42 can be passed through the aforementioned hollow connecting tube 51 and led out to connect with the processing unit 3.

[0099] Optionally, when detecting the real implantation energy and / or the real implantation angle of the ion beam, the target wafer 6 carried on the wafer carrier plate 5 may be a dummy wafer rather than a formal production wafer.

[0100] It is worth mentioning that in some embodiments of this application, please combine Fig.14 It is understood that the vertical detection unit 42 rotates up and down along the second direction (e.g., the Y direction) within the detection period within a range of angles from -60° to +90°. The horizontal detection unit 41 rotates left and right along the first direction (e.g., the X direction) within the detection period within a range of angles from -90° to +90°.

[0101] It can be understood that within a detection cycle, the smaller the rotation angles of the horizontal detection unit 41 and the vertical detection unit 42 are, the higher the detection accuracy is. At the same time, higher requirements are also imposed on the machine hardware and the ion beam angle deviation.

[0102] Optionally, the rotation angles of the horizontal detection unit 41 and the vertical detection unit 42 may each range from 0.5° to 10°.

[0103] In some examples, the vertical detection unit 42 rotates up and down along the second direction (e.g., the Y direction) within the detection period at an angle ranging from -5° to +5°. The horizontal detection unit 41 rotates left and right along the first direction (e.g., the X direction) within the detection period at an angle ranging from -5° to +5°.

[0104] In the following embodiments, Figure 15~Figure 17 Taking the second Faraday detection unit 4 as a whole rotating, and the corresponding rotation angle of the vertical detection unit 42 and the horizontal detection unit 41 in one detection cycle as an example, the detection principle of the actual injection angle of the ion beam in the above embodiment is described in detail.

[0105] See also Fig.15 When the horizontal detection unit 41 rotates left and right from the middle 0 degree along the first direction (for example, the X direction) within the detection period, the driving motor in the vertical detection unit 42 rotates the same angle, and the vertical detection unit 42 can detect and obtain the fourth ion beam waveform F4 as shown in FIG. Fig.15 Here, the rotation angle of the driving motor in the vertical detection unit 42 can be used to represent the rotation position of the horizontal detection unit 41.

[0106] Please continue reading Fig.15 In a detection cycle when the vertical detection unit 42 starts to capture the ion beam, the second Faraday detection unit 4 first rotates counterclockwise from the middle 0° to -5°, then returns to 0°, and then rotates clockwise to +5°. Fig.15As shown in , the fourth ion beam waveform F4 will have an intersection point within a detection cycle, and the maximum ion beam current point corresponding to the vicinity of the intersection point can be called a reversing point P. The reversing point P corresponds to the rotation angle of the driving motor in the vertical detection unit 42 marked as T0. The rotation angle T0 at this time is the true vertical angle between the ion beam and the target wafer 6 (or wafer carrier plate 5).

[0107] Similarly, when the vertical detection unit 42 rotates up and down from the middle 0 degree along the second direction (for example, the Y direction) during the detection period, the driving motor in the horizontal detection unit 41 rotates the same angle, and the horizontal detection unit 41 can detect and obtain the third ion beam waveform F3, which is consistent with Fig.15 Here, the rotation angle of the driving motor in the horizontal detection unit 41 can be used to characterize the rotation position of the vertical detection unit 42. In addition, combined with the aforementioned determination method of the rotation angle T0, the true horizontal angle between the ion beam and the target wafer 6 (or the wafer carrier 5) can also be obtained.

[0108] It can be understood that the real rotation angle T0 between the ion beam and the target wafer 6 (or wafer carrier plate 5) will have a certain deviation from the absolute vertical 0° or absolute horizontal 0° of the target wafer 6 (or wafer carrier plate 5), for example, there is a deviation Δ. After detecting and obtaining the aforementioned real vertical angle and / or real horizontal angle, before the ion beam is formally injected, the angle compensation of the deviation Δ can be performed on the basis of the angle set in the control menu of the ion beam. For example, +T0 (T0 is a vector with a direction) can be added to the original set angle to ensure that the real injection angle of the ion beam meets the target setting value.

[0109] For ease of description, the following embodiments are still described by taking the example that the horizontal detection unit 41 rotates left and right from the middle 0 degree along the first direction (eg, X direction) within the detection period, and the vertical detection unit 42 detects and obtains the fourth ion beam waveform F4.

[0110] See also Fig.16 and Fig.17 , Fig.16 The fourth ion beam waveform F4 shown is the ion beam waveform when the rotation angle deviation Δ between the second Faraday detection unit 4 and the ion beam is greater than 5°. Fig.17 The fourth ion beam waveform F4 shown is the ion beam waveform when the rotation angle deviation Δ between the second Faraday detection unit 4 and the ion beam is less than -5°. Fig.16 and Fig.17 No reversing point P appears in the fourth ion beam waveform F4 shown.

[0111] Therefore, if there is no reversal point P in the third ion beam waveform F3 and / or the fourth ion beam waveform F4, it means that the deviation between the machine hardware and the ion beam angle is greater than or equal to the set threshold (usually the minimum value allowed by the machine hardware). In other words, by detecting the presence of the reversal point P in the ion beam waveform, the working state of the machine hardware can also be determined to ensure that the machine hardware is in good working condition before each ion implantation.

[0112] For example, if no reversing point P appears in the third ion beam waveform F3 and / or the fourth ion beam waveform F4, the processing unit 3 may also control the machine to stop and / or trigger an alarm so that the operator can promptly check the machine hardware.

[0113] The embodiment of the present application also provides an ion beam detection method, which is applied to the ion beam detection device in the above embodiment. The ion beam detection method also has the technical advantages of the above ion beam detection device, which will not be described in detail here.

[0114] See also Fig.18 The ion beam detection method includes the following steps S100~S400.

[0115] S100, acquiring a first ion beam waveform within at least one detection cycle.

[0116] Here, the first ion beam waveform is the ion beam waveform obtained by the first Faraday detection unit reciprocating along the second direction when the ion beam deflection unit controls the ion beam in the ion beam transmission channel to emit along the first direction; the first direction is the extension direction of the ion beam transmission channel.

[0117] S200, acquiring a second ion beam waveform within at least one detection cycle.

[0118] Here, the second ion beam waveform is the ion beam waveform obtained by the first Faraday detection unit reciprocating along the second direction when the ion beam in the ion beam transmission channel is controlled by the ion beam deflection unit to be deflected relative to the first direction and then emitted.

[0119] S300, determining a waveform difference between a first ion beam waveform and a second ion beam waveform.

[0120] S400, determining the actual implantation energy of the ion beam according to the waveform difference.

[0121] By way of example, in some embodiments of the present application, in step S400, the actual injection energy of the ion beam is determined based on the waveform difference, including: if the first ion beam waveform and the second ion beam waveform are relatively shifted and the two waveforms are the same or the waveform difference between the two is less than or equal to the first target threshold, then the actual injection energy of the ion beam meets the process target; if the first ion beam waveform and the second ion beam waveform are relatively shifted and the waveform difference between the two is greater than the second target threshold, then the actual injection energy of the ion beam does not meet the process target, and an ion beam energy adjustment signal is output.

[0122] See also Fig.19 In some other embodiments of the present application, the ion beam detection method also includes the following steps S500~S700.

[0123] S500, acquiring a rotation position of a vertical detection unit and a corresponding third ion beam waveform within at least one detection cycle.

[0124] Here, the third ion beam waveform is the ion beam waveform acquired by the horizontal detection unit when the vertical detection unit rotates up and down along the second direction. The second Faraday detection unit includes a horizontal detection unit and a vertical detection unit respectively located on two adjacent sides of the target wafer. The second direction intersects with the first direction, for example, orthogonal.

[0125] S600, obtaining the rotational position of the horizontal detection unit and the corresponding fourth ion beam waveform within at least one detection cycle.

[0126] Here, the fourth ion beam waveform is the ion beam waveform acquired by the vertical detection unit when the horizontal detection unit rotates left and right along the first direction.

[0127] S700, analyzing whether the third ion beam waveform and / or the fourth ion beam waveform has a reversal point, and determining a real deflection angle of the ion beam relative to the target wafer in response to a rotation position corresponding to the reversal point.

[0128] In some embodiments of the present application, step S700 analyzes whether the third ion beam waveform and / or the fourth ion beam waveform has a reversal point, and determines the actual deflection angle of the ion beam relative to the target wafer in response to the rotation position corresponding to the reversal point, which may include the following steps S710 and S720.

[0129] S710, in response to the third ion beam waveform and / or the fourth ion beam waveform having a reversal point, determine the rotation position corresponding to the reversal point, and determine the actual deflection angle of the ion beam relative to the target wafer based on the deviation between the rotation position and the absolute 0° corresponding to the target wafer.

[0130] S720: In response to the third ion beam waveform and / or the fourth ion beam waveform having no reversing point, output a machine stop instruction and / or an alarm instruction.

[0131] It should be understood that although Fig.18 and Fig.19 The steps in the flowchart are shown in sequence as indicated by the arrows, but these steps are not necessarily executed in the order indicated by the arrows. Unless otherwise specified in this document, there is no strict order restriction for the execution of these steps, and these steps can be executed in other orders. Moreover, Fig.18 and Fig.19 At least part of the steps may include multiple sub-steps or multiple stages. These sub-steps or stages are not necessarily executed at the same time, but can be executed at different times. The execution order of these sub-steps or stages is not necessarily sequential, but can be executed in turn or alternately with other steps or at least part of the sub-steps or stages of other steps.

[0132] It should be added that, in some embodiments, the ion beam injection angle is directly related to the injection depth of the ion injection process and the conduction performance of the device. The method of detecting the ion beam injection angle in the related art is a single detection method for the theoretical angle, which is prone to large errors. However, the applicant found that the injection angle when the ions are actually injected does not only depend on the angle of the ion beam, but is also affected by the relative angle between the ion beam and the target wafer. In addition, the actual ion injection angle not only determines the ion injection depth, but also relates to the shape of the device after ion injection. As the process line width becomes smaller and smaller, the ion injection angle has an increasingly significant effect on the shape of the device after ion injection, which can directly determine the conductive performance of the device. Based on this, the embodiment of the present application also provides an ion beam detection device and an ion beam detection method, which can accurately measure the actual injection angle of the ion beam, so as to perform linkage detection and compensation for the actual injection angle between the ion beam and the target wafer, thereby helping to improve the product yield, and at the same time has strong applicability and ductility, and can be widely used in various ion injection processes.

[0133] See also Fig.12 and Fig.13The ion beam detection device provided in the embodiment of the present application includes: a second Faraday detection unit 4 and a processing unit 3. The second Faraday detection unit 4 includes: a horizontal detection unit 41 and a vertical detection unit 42 respectively located on two adjacent sides of the target wafer 6. The horizontal detection unit 41 is used to obtain the rotation position of the vertical detection unit 42 and the corresponding third ion beam waveform when the vertical detection unit 42 rotates up and down in the vertical direction (for example, the Y direction) for at least one detection cycle. The vertical detection unit 42 is used to obtain the rotation position of the horizontal detection unit 41 and the corresponding fourth ion beam waveform when the horizontal detection unit 41 rotates left and right in the horizontal direction (for example, the X direction) for at least one detection cycle. The processing unit is connected to the second Faraday detection unit and is configured to: analyze whether the third ion beam waveform and / or the fourth ion beam waveform has a reversal point, so as to determine the actual deflection angle of the ion beam relative to the target wafer in response to the rotation position corresponding to the reversal point. The processing unit 3 is connected to the second Faraday detection unit 4 and is configured to: analyze whether the third ion beam waveform and / or the fourth ion beam waveform has a reversal point, so as to determine the actual deflection angle of the ion beam relative to the target wafer 6 in response to the rotation position corresponding to the reversal point.

[0134] In addition, the specific features, structures, materials or characteristics related to or described in the corresponding examples in some of the aforementioned ion beam detection device embodiments may also be combined with the embodiment or included in at least one embodiment or example of the present application.

[0135] See also Fig.19 The ion beam detection method provided in the embodiment of the present application includes the following steps S500~S700.

[0136] S500, acquiring a rotation position of a vertical detection unit and a corresponding third ion beam waveform within at least one detection cycle.

[0137] Here, the third ion beam waveform is the ion beam waveform acquired by the horizontal detection unit when the vertical detection unit rotates up and down in the vertical direction. The second Faraday detection unit includes a horizontal detection unit and a vertical detection unit respectively located on two adjacent sides of the target wafer.

[0138] S600, obtaining the rotation position of the horizontal detection unit and the corresponding fourth ion beam waveform within at least one detection cycle.

[0139] Here, the fourth ion beam waveform is the ion beam waveform acquired by the vertical detection unit when the horizontal detection unit rotates left and right along the horizontal direction.

[0140] S700, analyzing whether the third ion beam waveform and / or the fourth ion beam waveform has a reversal point, and determining a real deflection angle of the ion beam relative to the target wafer in response to a rotation position corresponding to the reversal point.

[0141] In addition, the specific steps or schemes described in some of the aforementioned ion beam detection method embodiments that are related to this embodiment or correspond to the examples may also be combined with this embodiment or included in at least one embodiment or example of the present application.

[0142] The embodiments of the present application also provide an ion implantation device, including an ion beam detection device as described in any of the above embodiments. The technical advantages possessed by the aforementioned ion beam detection device are also possessed by the ion implantation device, which will not be elaborated here. Moreover, after obtaining the actual injection energy and / or actual angle deviation of the ion beam detected by the ion beam detection device, the ion implantation device provided in the embodiments of the present application can accurately control the ion beam according to the feedback signal of the actual injection energy and / or actual angle deviation of the ion beam, thereby improving the online monitoring of the ion beam implantation process and effectively improving the product yield.

[0143] In the description of this specification, the description with reference to the terms "some embodiments", "some examples", "exemplarily", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic descriptions of the above terms do not necessarily refer to the same embodiment or example.

[0144] The technical features of the above embodiments may be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0145] The above-mentioned embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that, for ordinary technicians in this field, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application.

Claims

1. An ion beam detection device, characterized in that: include: An ion beam deflection unit, having an ion beam transmission channel, for controlling the ion beam in the ion beam transmission channel to be emitted in a target direction; The ion beam transmission channel extends along a first direction, and the target direction is the same as the first direction or deflected relative to the first direction; A first Faraday detection unit, located at a side of the ion beam emitted by the ion beam deflection unit, is used to reciprocate along a second direction and obtain a first ion beam waveform within at least one detection period when the target direction is the same as the first direction, and a second ion beam waveform within at least one detection period when the target direction is deflected relative to the first direction; The second direction intersects the first direction; The processing unit is connected to the first Faraday detection unit and is configured to compare the waveform difference between the first ion beam waveform and the second ion beam waveform to determine the actual injection energy of the ion beam according to the waveform difference.

2. The ion beam detection device according to claim 1, characterized in that: The ion beam deflection unit comprises: a cavity having the ion beam transmission channel extending in a trumpet shape along the first direction; The wire winding is insulated and wound around the outer wall of the cavity, and is used to form a magnetic field in the ion beam transmission channel after power is turned on.

3. The ion beam detection device according to claim 1, characterized in that: The first Faraday detection unit comprises: a first Faraday sensor having a slit facing the ion beam deflection unit; A driving mechanism is connected to the first Faraday sensor and is used to drive the first Faraday sensor to reciprocate along the second direction.

4. The ion beam detection device according to claim 3, characterized in that: The first Faraday detection unit also includes: An encoder is connected to the driving mechanism and / or the first Faraday sensor and is configured to record the moving position of the first Faraday sensor.

5. The ion beam detection device according to any one of claims 1 to 4, characterized in that: Also includes: The second Faraday detection unit comprises: a horizontal detection unit and a vertical detection unit respectively located on two adjacent sides of the target wafer; the horizontal detection unit is used to obtain the rotation position of the vertical detection unit and the corresponding third ion beam waveform when the vertical detection unit rotates up and down along the second direction for at least one detection cycle; the vertical detection unit is used to obtain the rotation position of the horizontal detection unit and the corresponding fourth ion beam waveform when the horizontal detection unit rotates left and right along the first direction for at least one detection cycle; Wherein, the processing unit is also connected to the second Faraday detection unit and is configured to: analyze whether the third ion beam waveform and / or the fourth ion beam waveform has a reversal point, so as to determine the actual deflection angle of the ion beam relative to the target wafer in response to the rotation position corresponding to the reversal point.

6. The ion beam detection device according to claim 5, characterized in that: The vertical detection unit rotates up and down along the second direction within the detection period. The angle range includes: -60° to +90°; The angle value range of the horizontal detection unit rotating left and right along the first direction within the detection period includes: -90°~+90°.

7. An ion beam detection method, characterized in that: include: Acquire a first ion beam waveform within at least one detection period; The first ion beam waveform is an ion beam waveform obtained when the first Faraday detection unit reciprocates along the second direction when the ion beam deflection unit controls the ion beam in the ion beam transmission channel to be emitted along the first direction; the first direction is the extension direction of the ion beam transmission channel; Acquire a second ion beam waveform within at least one detection cycle; the second ion beam waveform is an ion beam waveform acquired when the first Faraday detection unit reciprocates along the second direction when the ion beam in the ion beam transmission channel is deflected relative to the first direction and then emitted by the ion beam deflection unit; determining a waveform difference between the first ion beam waveform and the second ion beam waveform; The actual implantation energy of the ion beam is determined based on the waveform difference.

8. The ion beam detection method according to claim 7, characterized in that: Determining the actual implantation energy of the ion beam according to the waveform difference comprises: If the first ion beam waveform and the second ion beam waveform are relatively shifted and the two waveforms are the same or the difference between the two waveforms is less than or equal to the first target threshold, then the actual implantation energy of the ion beam meets the process target; If the first ion beam waveform and the second ion beam waveform are relatively shifted and the waveform difference between the two is greater than a second target threshold, the actual implantation energy of the ion beam does not meet the process target, and an ion beam energy adjustment signal is output.

9. The ion beam detection method according to claim 7 or 8, characterized in that: Also includes: Acquire the rotation position of the vertical detection unit and the corresponding third ion beam waveform within at least one detection cycle; the third ion beam waveform is the ion beam waveform acquired by the horizontal detection unit when the vertical detection unit rotates up and down along the second direction; the second Faraday detection unit includes the horizontal detection unit and the vertical detection unit respectively located on two adjacent sides of the target wafer; the second direction intersects with the first direction; Acquire the rotation position of the horizontal detection unit and the corresponding fourth ion beam waveform within at least one detection cycle; the fourth ion beam waveform is the ion beam waveform acquired by the vertical detection unit when the horizontal detection unit rotates left and right along the first direction; The third ion beam waveform and / or the fourth ion beam waveform is analyzed to determine whether they have a reversal point, and a real deflection angle of the ion beam relative to the target wafer is determined in response to a rotation position corresponding to the reversal point.

10. An ion beam detection device, characterized in that: include: The second Faraday detection unit includes: a horizontal detection unit and a vertical detection unit respectively located on two adjacent sides of the target wafer; the horizontal detection unit is used to obtain the rotation position of the vertical detection unit and the corresponding third ion beam waveform when the vertical detection unit rotates up and down in the vertical direction for at least one detection cycle; the vertical detection unit is used to obtain the rotation position of the horizontal detection unit and the corresponding fourth ion beam waveform when the horizontal detection unit rotates left and right in the horizontal direction for at least one detection cycle; A processing unit, connected to the second Faraday detection unit, is configured to: analyze whether the third ion beam waveform and / or the fourth ion beam waveform has a reversal point, so as to determine a real deflection angle of the ion beam relative to the target wafer in response to a rotation position corresponding to the reversal point.

11. An ion beam detection method, characterized in that: include: Acquire the rotation position of the vertical detection unit and the corresponding third ion beam waveform within at least one detection cycle; the third ion beam waveform is the ion beam waveform acquired by the horizontal detection unit when the vertical detection unit rotates up and down in the vertical direction; the second Faraday detection unit includes the horizontal detection unit and the vertical detection unit respectively located on two adjacent sides of the target wafer; Acquire the rotation position of the horizontal detection unit and the corresponding fourth ion beam waveform within at least one detection cycle; the fourth ion beam waveform is the ion beam waveform acquired by the vertical detection unit when the horizontal detection unit rotates left and right in the horizontal direction; The third ion beam waveform and / or the fourth ion beam waveform is analyzed to determine whether they have a reversal point, and a real deflection angle of the ion beam relative to the target wafer is determined in response to a rotation position corresponding to the reversal point.

12. An ion implantation device, characterized in that: Includes the ion beam detection device as described in any one of claims 1 to 6, or includes the ion beam detection device as described in claim 10.

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