Plasma etching system and method

Abstract

The invention provides a plasma etching system and method, and solves the problem that the side wall of an etching hole is poor in perpendicularity in the prior art. The plasma etching system comprises a particle beam generation device which is used for generating a particle beam which is emitted along a preset direction; the movable carrying table is located on the side, where the particle beam is emitted, of the particle beam generation device, and the movable carrying table comprises a bearing surface; the ionization device is located on the side, away from the movable carrying table, of the particle beam generation device, and the ionization device is used for providing an ionization environment; wherein the movable carrying platform comprises an initial working state and a first working state, in the initial working state, the included angle between the preset direction and the bearing surface is an acute angle, and in the first working state, the movable carrying platform rotates around the normal of the bearing surface based on the initial working state.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a plasma etching system and method. Background Art

[0002] In the semiconductor industry, inductively coupled plasma etching technology is one of the conventional etching processes. However, when using inductively coupled plasma etching technology to etch a film layer, the etching sidewall often has a certain angle and cannot obtain a vertical morphology. Summary of the invention

[0003] In view of this, an embodiment of the present application provides a plasma etching system and method to solve the problem of poor verticality of the sidewalls of the etched holes in the prior art.

[0004] The first aspect of the present application provides a plasma etching system, comprising: a particle beam generating device, for generating a particle beam emitted along a predetermined direction; a movable carrier, located on a side of the emitted particle beam of the particle beam generating device, the movable carrier comprising a bearing surface; and an ionization device, located on a side of the particle beam generating device away from the movable carrier, the ionization device being used to provide an ionization environment; wherein the movable carrier comprises an initial working state and a first working state, in which the angle between the predetermined direction and the bearing surface is an acute angle, and in the first working state, the movable carrier rotates around the normal of the bearing surface based on the initial working state.

[0005] In combination with the first aspect, in some possible implementations, the particle beam generating device includes a first conductive mesh, a second conductive mesh, and a third conductive mesh arranged in parallel in a predetermined direction, the first conductive mesh and the second conductive mesh have opposite electrical properties, and the third conductive mesh is grounded.

[0006] In combination with the first aspect, in some possible implementations, the potential of the first conductive network is positive, and the potential of the second conductive network is negative.

[0007] In combination with the first aspect, in some possible implementations, the particle beam generating device further includes a fourth conductive mesh located between the second conductive mesh and the third conductive mesh, and the fourth conductive mesh is arranged in parallel with the second conductive mesh and the third conductive mesh.

[0008] In combination with the first aspect, in some possible implementations, mesh sizes of at least two of the first conductive mesh, the second conductive mesh, the third conductive mesh, and the fourth conductive mesh are different.

[0009] In combination with the first aspect, in some possible implementations, the ionization device includes a radio frequency coil, and the direction of the magnetic field generated by the radio frequency coil is parallel to a preset direction.

[0010] In combination with the first aspect, in some possible implementations, the plasma etching system further includes a first cavity and a second cavity that are connected, the particle beam generating device and the movable carrier are located in the first cavity, and the ionization device is located in the second cavity.

[0011] In combination with the first aspect, in some possible implementations, the movable platform further includes a second working state, in which the predetermined direction is perpendicular to the carrying surface.

[0012] In combination with the first aspect, in some possible implementations, the plasma etching system also includes an inductively coupled plasma etching component, a third chamber and a transmission component, the inductively coupled plasma etching component is located in the third chamber, the third chamber and the first chamber are independent of each other, and the transmission component is used to transfer the substrate to be etched between the third chamber and the first chamber.

[0013] A second aspect of the present application provides a plasma etching method, which is applicable to the plasma etching system provided in any embodiment of the present application, and the plasma etching method includes: starting an ionization device and a particle beam generating device; controlling a movable carrier to adjust from a current state to an initial working state, a substrate to be etched is carried on a carrying surface, the substrate to be etched includes a primary etching hole, and the primary etching hole is obtained by an inductively coupled plasma etching process; controlling the movable carrier to rotate around the normal of the carrying surface based on the initial working state, so that the particle beam performs secondary etching on the side wall of the primary etching hole to obtain a secondary etching hole, and the verticality between the side wall of the secondary etching hole and the substrate is greater than the verticality between the primary etching hole and the substrate.

[0014] According to the plasma etching system and method provided in the embodiment of the present application, the primary etched hole obtained by inductively coupled plasma etching can be subjected to secondary etching to remove the redundant part on the side wall of the primary etched hole to obtain a secondary etched hole with better verticality. Among them, the plasma etching system includes a particle beam generating device, a movable stage and an ionization device. The particle beam generating device is used to generate a particle beam emitted in a predetermined direction. The movable stage is located on one side of the emitted particle beam of the particle beam generating device, and the movable stage includes a bearing surface. The ionization device is located on the side of the particle beam generating device away from the movable stage, and the ionization device is used to provide an ionized environment. The movable stage includes an initial working state and a first working state. In the initial working state, the angle between the predetermined direction and the bearing surface is an acute angle; in the first working state, the movable stage rotates around the normal of the bearing surface based on the initial working state. When the plasma etching system provided in the present application is used to perform secondary etching on the primary etched hole obtained by inductively coupled plasma etching, the substrate to be etched is placed on the supporting surface. In the initial working state, the particle beam can bombard part of the side wall of the primary etched hole. In the first working state, by rotating the movable stage, the side wall of the primary etched hole in all directions can be secondary etched, thereby obtaining an etched hole with better verticality. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 It is a schematic diagram of the cross-sectional structure of an etched hole obtained by etching a PI film using an inductively coupled plasma etching process in the related art.

[0016] Figure 2 for Figure 1 Schematic diagram of the electric field distribution in the etching chamber during the inductively coupled plasma etching process.

[0017] Figure 3a A schematic structural diagram of a plasma etching system provided in the first embodiment of the present application.

[0018] Figure 3b for Figure 3a An enlarged view of a local area Q of a plasma etching system is shown.

[0019] Figure 4 A schematic flow chart of a plasma etching method provided in the first embodiment of the present application.

[0020] Figure 5a and Figure 5b For execution Figure 4 Schematic diagram of the structure of the intermediate product obtained during the plasma etching method shown.

[0021] Figure 6 A schematic structural diagram of a plasma etching system provided in the second embodiment of the present application.

[0022] Figure 7 A schematic flow chart of a plasma etching method provided in the second embodiment of the present application.

[0023] Figure 8 For execution Figure 7 Scanning electron microscope morphology of the secondary etched holes obtained by the plasma etching method shown. DETAILED DESCRIPTION

[0024] From the advent of the first integrated circuit containing only one bipolar transistor in 1958 to the application of processor chips integrating more than one billion transistors today, integrated circuits have developed rapidly in more than 60 years and have always followed the famous "Moore's Law". With the gradual arrival of the post-Moore era, the industry has gradually shifted from focusing on the advancement of wafer manufacturing technology nodes to the innovation of packaging technology, so advanced packaging technology came into being. Advanced packaging technology can not only increase functions and enhance product value, but also effectively reduce costs, becoming one of the important ways to continue Moore's Law.

[0025] At present, the main advanced packaging technologies include flip chip, wafer level packaging (WLP), 2.5D packaging, 3D packaging, etc. Among them, 2.5D packaging refers to packaging that performs high-density I / O interconnection between chiplets through a middle layer (for example, an adapter board), which is characterized by multi-die integration and high density. At present, 2.5D packaging can be divided into re-distribution layer (RDL), interposer, and silicon interposer. 2.5D RDL Interposer technology connects logic to logic, logic to high-bandwidth memory (HBM) modules through high-density RDL, which has lower cost, simpler process, and thinner size. Therefore, the material type and etching process of the RDL layer will affect the final packaging effect.

[0026] The RDL layer film needs to meet many characteristics such as small angle curvature value (i.e. k value), high heat resistance stability, high insulation strength, high dimensional stability, low stress, low moisture absorption, and good adhesion with metal materials. Polyimide (PI) is an aromatic heterocyclic polymer compound containing imide chain links in its molecular structure. It has good temperature resistance, high insulation, good mechanical properties, high stability and non-toxicity, so it is used as the RDL layer film material. In actual packaging, in order to increase the interconnection density, the number of RDL layers increases, and the line width and line spacing (line / space; L / S, also known as the special diagnosis dimension, CD) decrease (generally less than 10um). It is difficult to obtain vertical PI holes with traditional photolithography and there are photomask limitations. Dry etching is required to obtain vertical PI holes and PI grooves for RDL wiring and high-density interconnection.

[0027] In the related technology, the inductively coupled plasma (ICP) etching process is usually used to etch the PI film layer to obtain PI etching holes. Plasma refers to the use of energy to excite neutral gas molecules to produce active substances such as electrons, ions, and free radicals. The electrons are accelerated due to the potential difference in the electric field. When the electrons collide with other gas molecules during the acceleration process, they are excited and emit energy, and the atoms that are hit are excited and release electrons. This cycle makes the plasma process have electrons, particles, free radicals and neutral molecules at the same time, which is called the plasma state.

[0028] Figure 1 FIG. 1 is a schematic diagram of the cross-sectional structure of an etched hole obtained by etching a PI film using an inductively coupled plasma etching process in the related art. Figure 1 As shown, when the polyimide film layer (PI) is etched by inductively coupled plasma etching, the cross-sectional shape of the etched hole 10 is roughly inverted trapezoidal, and a rectangular hole with better verticality cannot be obtained. The verticality mentioned here refers to the verticality of the side wall of the etched hole 10 relative to the substrate 11.

[0029] The inventor has analyzed and studied the causes of the above problems. Figure 2 for Figure 1 Schematic diagram of the electric field distribution in the etching chamber during the inductively coupled plasma etching process. Figure 2 As shown, an upper electrode and a lower electrode are arranged opposite to each other in the inductively coupled etching chamber, and the direction of the electric field is from the upper electrode to the lower electrode. In the direction from the upper electrode to the lower electrode, the electric field strength is unevenly distributed. Therefore, when the substrate to be etched is placed between the upper electrode and the lower electrode to etch the PI, there will be a certain degree of isotropic etching, so that the cross-sectional shape of the etched hole 10 is roughly an inverted trapezoid, and a rectangular hole with better verticality cannot be obtained.

[0030] In view of this, the present application provides a plasma etching system and method, the plasma etching system can Figure 1 The etched hole shown (hereinafter referred to as the primary etched hole for the sake of distinction) 10 is modified, that is, a secondary etching is performed to remove the redundant part on the side wall of the primary etched hole to obtain a secondary etched hole with better verticality. Among them, the plasma etching system includes a particle beam generating device, a movable stage and an ionization device. The particle beam generating device is used to generate a particle beam emitted in a predetermined direction. The movable stage is located on one side of the emitted particle beam of the particle beam generating device, and the movable stage includes a bearing surface. The ionization device is located on the side of the particle beam generating device away from the movable stage, and the ionization device is used to provide an ionized environment. The movable stage includes an initial working state and a first working state. In the initial working state, the angle between the predetermined direction and the bearing surface is an acute angle; in the first working state, the movable stage rotates around the normal of the bearing surface based on the initial working state.

[0031] When the plasma etching system provided by the present application is used Figure 1 When the substrate to be etched is etched, as shown in FIG. Figure 1 The substrate to be etched is placed on the supporting surface. In the initial working state, the particle beam can bombard part of the side wall of the primary etched hole. In the first working state, by rotating the movable stage, the side wall of the primary etched hole in all directions can be etched for the second time, thereby obtaining an etched hole with better verticality.

[0032] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0033] Figure 3a A schematic structural diagram of a plasma etching system provided in the first embodiment of the present application. Figure 3b for Figure 3a An enlarged view of a local area Q of the plasma etching system shown. Figure 3a and Figure 3b As shown, the plasma etching system includes: a particle beam generating device 21 , a movable stage 22 and an ionizing device 23 .

[0034] The movable stage 22 includes a carrying surface S for carrying the substrate to be etched. Figure 3a As shown, the movable stage 22 can rotate in a vertical plane with the y direction as the axis, and can rotate about the normal line of the supporting surface S as the axis.

[0035] The ionization device 23 is used to provide an ionization environment. When gas is injected into the ionization device 23, the ionization device 23 can ionize the gas to obtain plasma.

[0036] In one embodiment, the ionization device 23 includes a radio frequency coil 231. The radio frequency coil 231 is wound on a ceramic tube 245. The internal space surrounded by the radio frequency coil 231 forms an ionization environment. When gas is injected into the ionization environment, the gas is ionized to generate a particle atmosphere composed of particles of various properties, that is, plasma.

[0037] The particle beam generating device 21 is located between the movable stage 22 and the ionizing device 23. Specifically, the particle beam generating device 21 generates a particle beam emitted along a predetermined direction x based on the plasma generated by the ionizing device 23, the movable stage 12 is located on the side of the particle beam generating device 21 that emits the particle beam, and the ionizing device 23 is located on the side of the particle beam generating device 21 that is away from the movable stage. For example, Figure 3a As shown, the particle beam generating device 21 is used to generate a particle beam emitted horizontally to the left, the movable stage 22 is located on the left side of the particle beam generating device 21, and the ionization device 23 is located on the right side of the particle beam generating device 11. The predetermined direction x and the first direction y and the second direction z constitute a three-dimensional rectangular coordinate system in space.

[0038] The particle beam generating device 21 is implemented as a mesh assembly, which includes multiple layers of conductive meshes arranged in parallel in a predetermined direction x. The conductive mesh refers to a conductive structure with a mesh, such as a metal mesh, a metal plate with a mesh hollow pattern, etc. The multiple layers of conductive mesh include a first conductive mesh 211, a second conductive mesh 212, and a third conductive mesh 213. The first conductive mesh 211, the second conductive mesh 212, and the third conductive mesh 213 are arranged in parallel in a predetermined direction x. The electrical properties of the first conductive mesh 211 and the second conductive mesh 212 are opposite. For example, the potential of the first conductive mesh 211 is positive, that is, a positive voltage is applied to the first conductive mesh 211, so that the first conductive mesh 211 can lead positively charged particles in the plasma. The potential of the second conductive mesh 212 is negative, that is, a negative voltage is applied to the second conductive mesh 212, so that an electric field in the predetermined direction x is formed between the second conductive mesh 212 and the first conductive mesh 211, and the positively charged particles are accelerated by the electric field force to form a particle beam. The third conductive mesh 213 is grounded to lead out the particle beam, and the particle beam bombards the substrate to be etched on the supporting surface S to etch the substrate.

[0039] In one embodiment, the multilayer conductive mesh further includes a fourth conductive mesh 214, which is located between the second conductive mesh 212 and the third conductive mesh 213. The fourth conductive mesh 214 is arranged in parallel with the second conductive mesh 212 and the third conductive mesh 213. The fourth conductive mesh 214 is used to focus the particle beam, so that the particle beam is more collimated and the uniformity of the particle beam is improved. The voltage polarity applied to the fourth conductive mesh 214 can be reasonably set according to actual needs.

[0040] The mesh sizes of at least two of the first conductive mesh 211, the second conductive mesh 212, the third conductive mesh 213, and the fourth conductive mesh 214 are different. In this way, the collimation and uniformity of the particle beam can be improved. Preferably, the mesh sizes of the first conductive mesh 211 and the second conductive mesh 212 are different. In this way, the collimation and uniformity of the particle beam can be further improved.

[0041] like Figure 3a As shown, the plasma etching system further includes a first cavity 241 and a second cavity 242 connected to each other, that is, the second cavity 242 is equivalent to an external body of the first cavity 241. The particle beam generating device 21 and the movable stage 22 are located in the first cavity 241, and the ionization device 23 is located in the second cavity 242.

[0042] Figure 4 The flowchart of the plasma etching method provided in the first embodiment of the present application is shown in FIG. Figure 3a The plasma etching system shown performs Figure 4 The plasma etching method shown can be used for Figure 1 The sidewall of the primary etched hole is etched a second time to obtain a secondary etched hole with better sidewall verticality. Figure 5a and Figure 5b For execution Figure 4 Schematic diagram of the structure of the intermediate product obtained during the plasma etching method shown.

[0043] Combination Figure 4 and Figure 3a As shown, the plasma etching method 400 includes:

[0044] Step S410 , starting the ionization device 23 and the particle beam generating device 21 .

[0045] It should be noted that before starting, the process parameters need to be reasonably set according to actual needs, including gas pressure, gas flow, temperature, etc.

[0046] Afterwards, the etching gas is filled into the second cavity 142, and the RF coil is pressurized to generate a plasma atmosphere. Then, the mesh assembly is pressurized to extract the particles from the second cavity 142 and accelerate them into a particle beam. At the same time, the movable stage is adjusted to a preset angle between the carrying surface S and the predetermined direction x, which can be any angle within a range greater than zero and less than or equal to 90°, and can be reasonably set according to actual needs.

[0047] Step S420, see Figure 3a , control the movable stage 22 to adjust from the current state to the initial working state. The current state can be any state, such as a state where the bearing surface S is horizontal or vertical. The initial working state refers to a state where an acute angle is formed between the predetermined direction x and the bearing surface S. At this time, Figure 5a As shown, the particle beam can bombard the sidewalls of the primary etched hole.

[0048] The substrate to be etched is carried on the carrying surface S. Figure 1 As shown, the substrate to be etched includes a primary etched hole 10, which is obtained by an inductively coupled plasma etching process. Exemplarily, the substrate to be etched includes a substrate 11 (e.g., a wafer) and a film layer 12 to be etched (e.g., a PI film layer) and a mask layer 13 sequentially stacked on the substrate. A buffer layer 14 or the like may also be provided between the substrate 11 and the film layer 12 to be etched.

[0049] The supporting surface S can fix the substrate to be etched by vacuum adsorption.

[0050] Step S430, see Figure 3a , control the movable stage 12 to rotate around the normal of the bearing surface based on the initial working state, so that the particle beam performs secondary etching on the side wall of the primary etched hole 10 to obtain the secondary etched hole 30, such as Figure 5b As shown, the verticality between the sidewall of the secondary etched hole 30 and the substrate 11 is greater than the verticality between the primary etched hole 10 and the substrate 11 .

[0051] According to the plasma etching system provided in this embodiment, by adjusting the size of the angle between the predetermined direction x and the supporting surface S in the initial working state, the particle beam can be selectively controlled to bombard different positions of the side wall of the primary etching hole 10, so that different positions of the side wall of the primary etching hole 10 can be selectively etched, thereby obtaining a secondary etching hole 30 with better side wall verticality.

[0052] In one embodiment, Figure 3a The plasma etching system shown can also be used to etch Figure 1 The primary etching hole 10 is shown. In this case, the movable stage 12 also includes a second working state, in which the predetermined direction x and the carrying surface S are perpendicular.

[0053] Specifically, for the pre-set substrate, the process of etching the pre-set substrate using the plasma etching system includes: firstly, performing step S410. Secondly, adjusting the movable stage 12 to make the carrying surface S perpendicular to the predetermined direction x, for example, Figure 3a As shown, the movable stage 12 is adjusted to a state where the carrying surface S is vertical. In this case, the pre-set substrate is etched once to obtain Figure 2 The primary etched hole 10 is shown. Then, step S420 and step S430 are performed to perform secondary etching on the sidewall of the primary etched hole 10 to obtain a secondary etched hole 30 with a better sidewall verticality.

[0054] Figure 6 This is a schematic diagram of the structure of the plasma etching system provided in the second embodiment of the present application. Figure 6 The plasma etching system shown and Figure 3a The difference between the plasma etching system shown in the figure is that, in this embodiment, the plasma etching system can also include an inductively coupled plasma etching component (not shown in the figure), a third chamber 243 and a transmission component (not shown in the figure). The inductively coupled plasma etching component is located in the third chamber 243, and the inductively coupled plasma etching component can form Figure 2 The electric field shown in FIG. 1 is used to etch the pre-set substrate using an inductively coupled plasma etching assembly to obtain Figure 1 The first etching hole 10 is shown. The third chamber 243 and the first chamber 241 are independent of each other, and the conveying component is used to convey the substrate to be etched between the third chamber 243 and the first chamber 241. The conveying component is, for example, a robot, a conveyor belt, and the like.

[0055] The plasma etching system may further include a fourth chamber 244 . The fourth chamber 244 is, for example, a transmission chamber, and the transmission component is located in the fourth chamber 244 .

[0056] According to the plasma etching system provided in this embodiment, the pre-set substrate can be first etched in the third chamber 243 to obtain a primary etched hole 10, such as Figure 1 Then, the sidewall of the primary etched hole 10 is subjected to secondary etching in the first cavity 241 to obtain a secondary etched hole 30 with better verticality.

[0057] It should be noted that the use of Figure 6 The plasma etching system shown in the figure etches the pre-set substrate once to obtain the etched hole 10 once, which is compared with using Figure 3a As for the process in which the plasma etching system shown etches the preset substrate once to obtain an etched hole 10, the etching rate of the former is faster.

[0058] Figure 7A schematic flow chart of a plasma etching method provided in the second embodiment of the present application. Figure 8 For execution Figure 7 The scanning electron microscope morphology of the secondary etched hole obtained by the plasma etching method shown in FIG. The plasma etching method 700 is suitable for Figure 6 The plasma etching system is shown in FIG. Figure 7 As shown, the plasma etching method 700 includes:

[0059] Step S710, setting process parameters of each cavity.

[0060] Specifically, the process parameters of the third chamber 243 include: 1) setting the gas pressure to less than 100mT, preferably below 20mT; 2) the power of the upper electrode and the lower electrode are both below 1000W, preferably 100W-800W, where the power of the upper electrode is greater than the power of the lower electrode; 3) the etching gas can use O2, N2, NF3, CHF3, CH2F2 and other gases, or a mixture of the above gases, and the gas flow rate is 1sccm-200sccm; 4) the temperature of the supporting surface is less than 100°C; 5) the etching time is less than 10min.

[0061] The process parameters of the first chamber 241 include: 1) setting the gas pressure to less than 1mT; 2) in the mesh assembly, the voltage is set to less than 1500V, wherein the first conductive mesh 211 is applied with a positive voltage, the second conductive mesh 212 is applied with a negative voltage, the third conductive mesh 213 is applied with a positive voltage or a negative voltage, and the fourth conductive mesh 214 is grounded, and the specific voltage value of any conductive mesh may preferably be 200V-600V; 3) the power is set to less than 1000W, preferably 200W-700W; 4) inert gases such as Ar and Xe may be used, or fluorine-based gases such as CHF3, CF4, NF3, etc., or oxygen (O2), nitrogen (N2), etc., or a mixture of the above gases may be used. In particular, an inert gas and a reactive gas atmosphere are preferably used, and the gas flow rate is less than 50sccm; 5) the temperature of the bearing surface is less than 100°C; 6) the etching time is less than 10min; 7) the angle between the bearing surface S and the particle beam may be in the range of greater than 0° and less than or equal to 90°, preferably within 30°.

[0062] Step S720 , controlling the conveying assembly to convey the pre-set substrate to the third chamber 243 for etching, so as to obtain a substrate to be etched having a primary etching hole 10 .

[0063] The etching process in the third chamber 243 is based on ICP technology, and the PI film layer is etched by reactive gas, such as halogen-based gas. When the etching reaches the buffer layer, the etching is stopped.

[0064] Step S730 , controlling the conveying assembly to take the substrate to be etched out of the third chamber 243 and into the fourth chamber 244 , and then continue to transfer the substrate to the first chamber 241 , so as to perform secondary etching on the substrate to be etched in the first chamber 241 .

[0065] In the first cavity 241, by adjusting the angle between the bearing surface S and the preset direction x, different positions of the side wall of the primary etching hole 10 can be selectively etched. By adjusting the rotation speed of the bearing surface S, the uniformity of the secondary etching can be optimized. Among them, the angle between the bearing surface S and the preset direction x can be adjusted to any angle within the range of greater than 0° and less than or equal to 90°, preferably within 30°, to ensure that the particle beam is perpendicular to the side wall of the primary etching hole 10.

[0066] After the substrate to be etched is taken out from the third chamber 243 to the fourth chamber 244, it is transferred to the first chamber 241. Then the etching gas is filled into the second chamber 242, and the coil is pressurized to generate a plasma atmosphere. Then the mesh assembly is pressurized to extract particles from the second chamber 242 and accelerate them into a particle beam.

[0067] The specific details of step S730 can be found in step S420 and step S430, which will not be described in detail here.

[0068] Step S740, control the conveying assembly to take out the substrate to be etched after the second etching from the first chamber 241 to the fourth chamber 244. Finally, the substrate is transferred out of the plasma etching system to obtain Figure 8 The second etching hole 30 is shown, and the etching process is completed.

[0069] See also Figure 8 The scanning electron microscope (SEM) morphology image of the secondary etched hole 30 shows that the secondary etched hole 30 has a vertical sidewall, which is approximately 90 degrees relative to the surface of the substrate to be etched, proving that the present solution is feasible.

[0070] The above description has been given for the purpose of illustration and description. In addition, this description is not intended to limit the embodiments of the present application to the forms disclosed herein. Although multiple example aspects and embodiments have been discussed above, those skilled in the art will recognize certain variations, modifications, changes, additions and sub-combinations thereof.

Claims

1. A plasma etching system, characterized in that: include: A particle beam generating device, used for generating a particle beam emitted in a predetermined direction; a movable stage, located at a side of the particle beam generating device from which the particle beam is emitted, the movable stage comprising a carrying surface; and An ionization device, located at a side of the particle beam generating device away from the movable stage, and used for providing an ionization environment; Among them, the movable platform includes an initial working state and a first working state. In the initial working state, the angle between the predetermined direction and the bearing surface is an acute angle. In the first working state, the movable platform rotates around the normal of the bearing surface based on the initial working state.

2. The plasma etching system according to claim 1, characterized in that: The particle beam generating device comprises a first conductive mesh, a second conductive mesh and a third conductive mesh which are sequentially arranged in parallel along the predetermined direction, the first conductive mesh and the second conductive mesh have opposite electrical properties, and the third conductive mesh is grounded.

3. The plasma etching system according to claim 2, characterized in that: The potential of the first conductive network is positive, and the potential of the second conductive network is negative.

4. The plasma etching system according to claim 2 or 3, characterized in that: The particle beam generating device further includes a fourth conductive mesh located between the second conductive mesh and the third conductive mesh. The fourth conductive mesh is arranged in parallel with the second conductive mesh and the third conductive mesh.

5. The plasma etching system according to claim 4, characterized in that: At least two of the first conductive mesh, the second conductive mesh, the third conductive mesh, and the fourth conductive mesh have different mesh sizes.

6. The plasma etching system according to any one of claims 1 to 3, characterized in that: The ionization device comprises a radio frequency coil, and the direction of the magnetic field generated by the radio frequency coil is parallel to the preset direction.

7. The plasma etching system according to any one of claims 1 to 3, characterized in that: It also includes a first cavity and a second cavity that are connected, the particle beam generating device and the movable carrier are located in the first cavity, and the ionization device is located in the second cavity.

8. The plasma etching system according to any one of claims 1 to 3, characterized in that: The movable stage further includes a second working state, in which the predetermined direction is perpendicular to the carrying surface.

9. The plasma etching system according to claim 7, characterized in that: It also includes an inductively coupled plasma etching component, a third cavity and a transmission component, wherein the inductively coupled plasma etching component is located in the third cavity, the third cavity and the first cavity are independent of each other, and the transmission component is used to transmit the substrate to be etched between the third cavity and the first cavity.

10. A plasma etching method, characterized in that: A plasma etching system applicable to any one of claims 1 to 9, wherein the plasma etching method comprises: Starting the ionization device and the particle beam generating device; Controlling the movable stage to adjust from the current state to the initial working state, the carrying surface carries a substrate to be etched, the substrate to be etched comprises a primary etching hole, and the primary etching hole is obtained by an inductively coupled plasma etching process; The movable stage is controlled to rotate around the normal of the supporting surface based on the initial working state, so that the particle beam performs secondary etching on the side wall of the primary etching hole to obtain a secondary etching hole, and the verticality between the side wall of the secondary etching hole and the substrate is greater than the verticality between the primary etching hole and the substrate.

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