Ion beam etching method

Abstract

The ion beam etching method disclosed by the invention comprises the following steps: providing an ion beam etching machine, wherein the ion beam etching machine comprises an ion source for providing an ion beam and a supporting table for supporting a semiconductor material; positioning a semiconductor material on the support table; and controlling the ion beam to etch the semiconductor material at an incident angle of 0-45 degrees. According to the method, the shape and the size of the semiconductor material can be accurately controlled, and burrs and residues are not easy to generate on the semiconductor material, so that the manufacturing precision and the performance of a semiconductor device are improved.

Description

Technical Field

[0001] The invention relates to the field of semiconductor manufacturing, and in particular to an ion beam etching method. Background Art

[0002] Etching is a very important step in semiconductor manufacturing, microelectronics manufacturing, and micro-nano manufacturing. For example, in semiconductor device manufacturing, semiconductor materials need to be processed to adjust their size or shape. Ion beam etching technology has advantages over mechanical or chemical cutting, but the current ion beam etching method is not accurate enough to meet current production needs.

[0003] Therefore, it is urgent to provide an improved ion beam etching method to overcome the above defects. Summary of the invention

[0004] The object of the present invention is to provide an improved ion beam etching method, which can accurately control the shape and size of semiconductor materials and is not prone to generating burrs and residues on the semiconductor materials, thereby improving the manufacturing accuracy and performance of semiconductor devices.

[0005] To achieve the above object, the ion beam etching method of the present invention comprises the following steps:

[0006] An ion beam etcher is provided, the ion beam etcher comprising an ion source for providing an ion beam and a support table for supporting a semiconductor material;

[0007] positioning a semiconductor material on the support table; and

[0008] The ion beam is controlled to etch the semiconductor material at an incident angle of 0-45°.

[0009] Compared with the prior art, the ion beam etcher provided by the present invention comprises an ion source for providing an ion beam and a support table for supporting semiconductor materials. After positioning the semiconductor material on the support table, the ion beam is controlled to etch the semiconductor material at an incident angle of 0-45°, so that the semiconductor material is etched into a predetermined shape, such as an arc surface. Moreover, the semiconductor material with an arc surface obtained by the etching method has a smooth surface, and burrs and residues are not easily generated on the semiconductor material. The method can accurately control the shape and size of the semiconductor material and improve the performance of the semiconductor device.

[0010] Preferably, the semiconductor material includes silicon, silicon carbide, silicon nitride and / or gallium arsenide.

[0011] Preferably, the energy of the ion beam is 5 kV to 10 kV.

[0012] Preferably, the flow rate of the ion beam is 80 μA / cm 2 Up to 100μA / cm 2 .

[0013] Preferably, the ion beam etcher is a reactive ion beam etcher, an electron beam physical vapor deposition machine or an ion beam deposition machine.

[0014] Preferably, the ion beam etcher further comprises a rotating mechanism for controlling the rotation of the supporting platform.

[0015] Preferably, the method further includes: during the etching process, controlling the support platform and the semiconductor material to rotate. DETAILED DESCRIPTION

[0016] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are described in detail below in conjunction with some embodiments. In the following description, many specific details are set forth to facilitate a full understanding of the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the present application, so the present application is not limited by the specific embodiments disclosed below.

[0017] In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like to indicate orientations or positional relationships are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0018] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In the description of this application, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0019] In this application, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0020] In the present application, unless otherwise clearly specified and limited, a first feature being “above” or “below” a second feature may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, a first feature being “above”, “above”, and “above” a second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. A first feature being “below”, “below”, and “below” a second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0021] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it may be directly on the other element or there may be a central element. When an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be a central element at the same time. The terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used herein are for illustrative purposes only and are not intended to be the only implementation method.

[0022] The ion beam etching method of the present invention is further described below in conjunction with the embodiments, but the present invention is not limited thereby. The method of the present invention is intended to provide an improved ion beam etching method, which can accurately control the shape and size of semiconductor materials, and is not prone to generating burrs and residues on the semiconductor materials, thereby improving the manufacturing accuracy and performance of semiconductor devices.

[0023] In one embodiment of the ion beam etching method of the present invention, the following steps are included:

[0024] An ion beam etcher is provided, the ion beam etcher comprising an ion source for providing an ion beam and a support table for supporting a semiconductor material;

[0025] positioning a semiconductor material on the support table; and

[0026] The ion beam is controlled to etch the semiconductor material at an incident angle of 0-45°.

[0027] The ion beam etcher provided by the present invention comprises an ion source for providing an ion beam and a support platform for supporting semiconductor materials. After positioning the semiconductor material on the support platform, the ion beam is controlled to etch the semiconductor material at an incident angle of 0-45°, so that the semiconductor material is etched into a predetermined shape, such as an arc surface. Moreover, the semiconductor material with an arc surface obtained by the etching method has a smooth surface and is not prone to burrs and residues on the semiconductor material. The method can accurately control the shape and size of the semiconductor material and improve the performance of the semiconductor device.

[0028] Specifically, the ion beam etcher of the present invention can be a reactive ion beam etcher, an electron beam physical vapor deposition machine or an ion beam deposition machine. The basic principle of ion beam bombardment etching by physical action is to form ions from gas and act on the surface of the material through the ions to achieve etching of the material.

[0029] In one embodiment, an ion beam etcher includes an ion source for providing an ion beam and a support table for supporting a semiconductor material.

[0030] The semiconductor material may include silicon, silicon carbide, silicon nitride and / or gallium arsenide. The semiconductor material is positioned on a support table, and the ion beam is controlled to etch the semiconductor material at an incident angle of 0-45°. To achieve the adjustable incident angle, it can be achieved by controlling the angle of one of the semiconductor material and the ion beam. For example, the semiconductor material changes its angle by rotating, thereby changing the incident angle of the ion beam thereon. Alternatively, the incident angle of the ion beam is adjusted by controlling the rotation of the platform where the ion source is located.

[0031] In a preferred embodiment, the ion beam etcher further comprises a rotating mechanism for controlling the rotation of the support platform, that is, the rotation of the support body and the semiconductor material thereon is controlled by controlling the rotating mechanism, thereby adjusting the incident angle of the ion beam.

[0032] Specifically, the incident angle of the ion beam is 0-45° to obtain etching separation surfaces of different shapes.

[0033] In one embodiment, the energy of the ion beam is 5 kV to 10 kV, and the energy of the ion beam can be adjusted for different semiconductor materials to obtain an optimized etching effect. More preferably, the flow rate of the ion beam is controlled to be 80 μA / cm 2 Up to 100μA / cm 2 , so as to more accurately etch and separate the separation surface with a specific shape.

[0034] It can be seen that the ion beam etching method provided by the present invention controls the ion beam to etch the semiconductor material at an incident angle of 0-45°, so that the semiconductor material is etched into a predetermined shape, such as an arc surface. Moreover, the semiconductor material with an arc surface obtained by the etching method has a smooth surface and is not easy to produce burrs and residues on the semiconductor material. This method can accurately control the shape and size of the semiconductor material, thereby improving the performance of the semiconductor device.

[0035] The above disclosure is only a preferred embodiment of the present invention, which certainly cannot be used to limit the scope of rights of the present invention. Therefore, equivalent changes made according to the scope of the patent application of the present invention are still within the scope covered by the present invention.

Claims

1. An ion beam etching method, characterized in that: The following steps are involved: An ion beam etcher is provided, the ion beam etcher comprising an ion source for providing an ion beam and a support table for supporting a semiconductor material; positioning the semiconductor material on the support platform; as well as The ion beam is controlled to etch the semiconductor material at an incident angle of 0-45°.

2. The ion beam etching method according to claim 1, characterized in that: The semiconductor material includes silicon, silicon carbide, silicon nitride and / or gallium arsenide.

3. The ion beam etching method according to claim 1, characterized in that: The energy of the ion beam is 5 kV to 10 kV.

4. The ion beam etching method according to claim 1, wherein: The flux of the ion beam is 80 μA / cm 2 Up to 100μA / cm 2 .

5. The ion beam etching method according to claim 1, characterized in that: The ion beam etcher is a reactive ion beam etcher, an electron beam physical vapor deposition machine or an ion beam deposition machine.

6. The ion beam etching method according to claim 1, characterized in that: The ion beam etcher further comprises a rotating mechanism for controlling the rotation of the supporting platform.

7. The ion beam etching method according to claim 6, characterized in that: Also includes: During the etching process, the support platform and the semiconductor material are controlled to rotate.