Gas supply assembly and semiconductor wafer processing apparatus using the same

Abstract

A gas supply assembly and a semiconductor wafer processing apparatus are provided. The gas supply assembly includes: a thermal control plate including a heater and a cooler; a gas distribution plate below the thermal control plate and including a process gas distribution passage through which a process gas is delivered and a thermal conditioning gas distribution passage through which a thermal conditioning gas is delivered; a heat transfer pad under the gas distribution plate and including a dielectric material pad including an electrode therein; and a showerhead including a nozzle communicating with the process gas distribution passage and discharging the process gas. The heat transfer pad also includes a process gas movement channel in communication with the process gas distribution passage of the gas distribution plate and a thermal conditioning gas movement channel in communication with the thermal conditioning gas distribution passage of the gas distribution plate.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority from Korean Patent Application No. 10-2023-0143147 filed on October 24, 2023 in the Korean Intellectual Property Office, the disclosure of which is incorporated herein in its entirety for all purposes. Technical Field

[0003] The present disclosure relates to a gas supply assembly and a semiconductor substrate processing apparatus including the gas supply assembly. Background Art

[0004] In a semiconductor process for manufacturing a semiconductor device, a deposition process or an etching process may be performed using a semiconductor wafer processing apparatus using plasma.

[0005] The surface temperature of the showerhead of the gas supply assembly can have a significant impact on wafer processing. If the surface temperature of the showerhead is relatively high, blockage (no clearing, NOP) may occur when etching the substrate wafer, and when the temperature of the showerhead is low, the mask becomes wider, resulting in a problem of increasing the critical dimension (CD) of the bow.

[0006] Recently, in an etching process of a high aspect ratio contact (HARC) developed due to a demand for high integration of a semiconductor substrate, there is a need to improve a temperature control speed of a showerhead having a significant influence on the process.

[0007] The upper module of the semiconductor wafer processing equipment of the prior art may have a shower head, a gas distribution plate, a temperature control plate, etc. stacked on each other. Generally, a heater and a cooler may be provided in the temperature control plate to control the temperature of the shower head. In the process of controlling the temperature of the shower head, the upper module may have a large total mass, and may have a problem that the speed of controlling the temperature of the shower head is slow and limited due to the specific heat and thermal resistance of each plate.

[0008] If the temperature control of the showerhead is limited, it has a significant impact on the high aspect ratio contact etch process, leading to issues such as blocking in specific wafer areas or increased bow critical dimensions due to over-etching of the mask. Summary of the invention

[0009] One or more example embodiments of the present disclosure provide a gas supply assembly that can quickly adjust a surface temperature of a showerhead.

[0010] Furthermore, one or more example embodiments of the present disclosure provide a semiconductor wafer processing apparatus in which process efficiency and quality of a semiconductor wafer may be improved by controlling the temperature of a showerhead through dividing the wafer.

[0011] According to one aspect of an example embodiment, a gas supply assembly includes: a thermal control plate including a heater and a cooler; a gas distribution plate below the thermal control plate and including at least one process gas distribution passage configured to deliver a process gas and at least one heat regulating gas distribution passage configured to deliver a heat regulating gas; a showerhead including a nozzle connected to at least one process gas distribution passage of the gas distribution plate, the nozzle being configured to discharge the process gas; a heat transfer pad below the gas distribution plate and contacting the showerhead, the heat transfer pad including: a dielectric material pad; an electrode in the dielectric material pad; at least one process gas movement channel connected to at least one process gas distribution passage of the gas distribution plate; and at least one heat regulating gas movement channel connected to at least one heat regulating gas distribution passage of the gas distribution plate; and at least one gas collection portion between the showerhead and the heat transfer pad and connected to at least one heat regulating gas movement channel of the heat transfer pad, each of the at least one gas collection portion being a space configured to collect heat regulating gas therein.

[0012] According to one aspect of an example embodiment, a semiconductor wafer processing apparatus includes: a process chamber configured to accommodate a semiconductor wafer; a gas supply assembly in an upper portion of the process chamber and configured to discharge a process gas to the semiconductor wafer; and an electrostatic chuck configured to support the semiconductor wafer within the process chamber and generate plasma by interacting with the gas supply assembly. The gas supply assembly includes: a thermal control plate including a heater and a cooler; a gas distribution plate, which is below the thermal control plate and includes at least one process gas distribution passage configured to deliver a process gas and at least one heat regulating gas distribution passage configured to deliver a heat regulating gas; a showerhead, which includes a nozzle connected to at least one process gas distribution passage of the gas distribution plate, the nozzle being configured to discharge the process gas; a heat transfer pad, which is below the gas distribution plate and contacts the showerhead, the heat transfer pad including: a dielectric material pad; an electrode in the dielectric material pad; at least one process gas movement channel connected to at least one process gas distribution passage of the gas distribution plate; and at least one heat regulating gas movement channel connected to at least one heat regulating gas distribution passage of the gas distribution plate; and at least one gas collection portion, which is between the showerhead and the heat transfer pad and connected to at least one heat regulating gas movement channel of the heat transfer pad, each of the at least one gas collection portion being a space configured to collect heat regulating gas therein. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] The above and other aspects, features and advantages of the present disclosure will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which:

[0014] Figure 1 is a schematic cross-sectional view of a semiconductor wafer processing apparatus according to an example embodiment;

[0015] Figure 2 yes Figure 1 A schematic cross-sectional view of a gas supply assembly of a semiconductor wafer processing apparatus;

[0016] Figure 3 is from Figure 2 A bottom view of the nozzle viewed from direction A;

[0017] Figure 4 is from Figure 2 A schematic perspective view of a nozzle viewed from direction A;

[0018] Figure 5 is a schematic bottom view of a heat transfer pad according to an example embodiment;

[0019] Figure 6 is a schematic bottom view of a heat transfer pad according to another embodiment;

[0020] Figure 7 is a schematic bottom view of a heat transfer pad according to another embodiment;

[0021] Figure 8 is a schematic diagram showing electrical connections between electrodes embedded in a heat transfer pad and a showerhead according to an example embodiment;

[0022] Fig. 9 is a schematic diagram showing electrical connections between electrodes embedded in a heat transfer pad and a showerhead according to another embodiment; and

[0023] Fig.10 is a schematic diagram illustrating an operation of plasma polymer based on showerhead temperature control in a semiconductor wafer processing apparatus according to example embodiments. DETAILED DESCRIPTION

[0024] Hereinafter, non-limiting examples of embodiments of the present disclosure will be described with reference to the accompanying drawings.

[0025] The exemplary embodiments of the present disclosure may be modified to have various other forms, and may be described to provide a more complete explanation of the present disclosure to those skilled in the art. Accordingly, for clear description, the shapes and sizes of the elements in the figures may be exaggerated, and the elements referred to by the same symbols in the figures refer to the same elements.

[0026] In the present disclosure, the meaning of "connection" includes not only "direct connection" but also "indirect connection" through other structures. In addition, in some cases, it is a concept including all "electrically connected objects".

[0027] In the present disclosure, expressions such as "first", "second", etc. are used to distinguish one component from another component, and do not limit the order and / or importance of these components. In some cases, a first component may be named a second component, and similarly, a second component may be named a first component without departing from the scope of the present disclosure.

[0028] The terms used in the present disclosure are used to describe examples only and are not intended to limit the present disclosure.In the present disclosure, unless the context clearly indicates otherwise, a singular expression includes a plural expression.

[0029] Figure 1 is a schematic cross-sectional view of a semiconductor wafer processing apparatus according to example embodiments.

[0030] A semiconductor wafer processing apparatus 1 according to an example embodiment of the present disclosure includes a process chamber 10 , a gas supply assembly 20 , and an electrostatic chuck 42 .

[0031] The processing chamber 10 may provide a space sealed relative to the outside for the wafer W, and the sealed space may provide a space in which a process is performed on the wafer W. The semiconductor process may include, for example, at least one of a deposition process, an etching process, and a cleaning process. The etching process may include an etching process of a high aspect ratio contact (HARC) performed in response to the demand for high integration of the semiconductor substrate.

[0032] The process chamber 10 is formed of a metal material such as aluminum (Al), etc. In example embodiments, the process chamber 10 may include a substrate passage through which a wafer W is loaded or unloaded.

[0033] The gas supply assembly 20 can control the thickness distribution and film quality characteristics of the deposited material by adjusting the uniformity and distribution of the process gas sprayed on the wafer W in the process chamber 10. The gas supply assembly 20 receives the process gas from the gas supply unit 14 and sprays the gas. The gas supply assembly 20 is connected to the power supply device 12, and generates plasma P between the electrostatic chuck 42 in the process chamber 10 and the gas supply assembly 20 by interacting with the electrostatic chuck 42 supporting the wafer W.

[0034] The electrostatic chuck 42 is an upper member of the wafer support 40 that supports the wafer W, and is vertically raised or lowered by power from a power supply unit 45 to adjust its distance relative to the gas supply assembly 20 .

[0035] The electrostatic chuck 42 may be a susceptor including a heating pattern 450, and the heating pattern 450 may heat the susceptor using power supplied from the outside. For example, the susceptor may be made of a material such as aluminum nitride (AlN), aluminum oxide (Al 2 O 3 ) and other ceramic materials.

[0036] As an example, when a high aspect ratio contact etching process is performed on a wafer W on an electrostatic chuck 42 in a process chamber 10 where plasma P has been generated, the surface temperature of the showerhead 28 of the gas supply assembly 20 significantly affects the stability of the etching process.

[0037] If the surface temperature of the shower head 28 is relatively high, clogging (no-op, NOP) occurs when etching the wafer W, and if the surface temperature of the shower head 28 is low, the mask becomes wider, which causes a problem that a bow critical dimension (CD) becomes larger.

[0038] Therefore, it is possible to control the temperature of the showerhead 28 , which will be described in detail below with reference to the gas supply assembly 20 .

[0039] Figure 2 yes Figure 1 A schematic cross-sectional view of a gas supply assembly of a semiconductor wafer processing apparatus, Figure 3 is from Figure 2 Bottom view of the nozzle viewed from direction A, Figure 4 is from Figure 2 Schematic perspective view of the spray head viewed from direction A.

[0040] Reference Figures 2 to 4 A gas supply assembly 20 according to an example of the present disclosure may include a thermal control plate 22 , a gas distribution plate 24 , a heat transfer pad 26 , and a showerhead 28 .

[0041] A heater H and a cooler C capable of controlling the temperature of the nozzle 28 are embedded in the heat control plate 22. The cooler C may be a refrigerant pipe through which the refrigerant flows. Because the total mass of the gas supply assembly 20 structure is large, and due to the specific heat of the corresponding components of the gas supply assembly 20 or the thermal resistance between the corresponding components, the speed at which the heater H and the cooler C control the temperature of the nozzle 28 is limited.

[0042] When plasma P is generated in the processing chamber 10 during a process and a temperature gradient occurs in the shower head 28 , the heat transfer pad 26 functions as a variable resistor in order to instantly control the temperature of a specific position of the shower head 28 .

[0043] The gas distribution plate 24 is disposed between the thermal control plate 22 and the heat transfer pad 26. The thermal control pad 23 may be disposed between the thermal control plate 22 and the gas distribution plate 24.

[0044] The gas distribution plate 24 is disposed below the heat control plate 22 , and a process gas distribution passage 242 through which a process gas is delivered and a heat regulating gas distribution passage 244 through which a heat regulating gas is delivered are formed in the gas distribution plate 24 .

[0045] The heat transfer pad 26 is a pad of dielectric material disposed below the gas distribution plate 24 , and the electrode 250 is embedded within the heat transfer pad 26 .

[0046] The heat transfer pad 26 is provided with a process gas moving channel 262 communicating with the process gas distribution passage 242 of the gas distribution plate 24 and a heat regulating gas moving channel 264 communicating with the heat regulating gas distribution passage 244 of the gas distribution plate 24 .

[0047] The showerhead 28 is provided with a nozzle 282 which is in communication with the process gas distribution passage 242 of the gas distribution plate 24 and discharges the process gas.

[0048] The process gas supplied from the gas supply unit 14 and passing through the process gas distribution passage 242 of the gas distribution plate 24 is sprayed onto the wafer W through the nozzles 282 of the shower head 28 .

[0049] The process gas may include one or more source gases. The plurality of nozzles 282 may uniformly apply the process gas to the wafer W to control the thickness distribution of the deposited material.

[0050] In addition, the heat regulating gas is supplied from the gas supply unit 14 and moves to the heat regulating gas distribution passage 244 of the gas distribution plate 24 and the heat regulating gas moving passage 264 of the heat transfer pad 26 .

[0051] The heat regulating gas moved to the heat regulating gas moving passage 264 moves to the gas collecting portion 260 disposed between the shower head 28 and the heat transfer pad 26 and in contact with the shower head 28 , and is collected.

[0052] The heat regulating gas collected in the gas collecting part 260 may be He, Ar and N 2 At least one of the above can control the temperature of the upper surface of the showerhead 28. During the process, in the case where the temperature of the showerhead 28 is high at a specific location, a relatively large amount of heat regulating gas can be provided to reduce the temperature of the showerhead 28 at the specific location. If the temperature of the showerhead 28 is low at the specific location, the temperature of the showerhead 28 at the specific location can be increased by stopping or reducing the supply of the heat regulating gas.

[0053] By controlling the heat conditioning gas as described above, the temperature can be adjusted at specific locations of the showerhead 28.

[0054] The heat transfer pad 26 includes a lower surface that contacts the upper closed surface 285 of the shower head 28, and also includes a concave cavity groove 265 that does not contact the upper closed surface 285 of the shower head 28. For example, the concave cavity groove 265 may be recessed in the lower surface of the heat transfer pad 26 to form the gas collection portion 260 and does not contact the upper closed surface 285 of the shower head 28.

[0055] The gas collecting portion 260 is a space between a partition wall portion 266 of the heat transfer pad 26 surrounding the process gas moving channel 262 thereof and a cavity groove 265 of the heat transfer pad 26. The partition wall portion 266 contacts an upper closing surface 285 of the showerhead 28.

[0056] Figure 5 is a schematic bottom view of a heat transfer pad according to an example embodiment, Figure 6 is a schematic bottom view of a heat transfer pad according to another embodiment, Figure 7 is a schematic bottom view of a heat transfer pad according to another embodiment.

[0057] The concave cavity groove 265 formed in the lower side of the heat transfer pad 26 is divided into a plurality of concave cavity groove sections in the radial direction R of the heat transfer pad 26 by a plurality of partition bars 300 contacting the upper closing surface 285 of the shower head 28 .

[0058] exist Figure 5 In the plurality of partition bars 300 of the exemplary embodiment, the process gas moving channels 262 and the heat regulating gas moving channels 264 are arranged at equal intervals. In this case, the process gas moving channels 262 are formed in the partition wall portions 266, respectively, and the heat regulating gas moving channels 264 are formed in the concave grooves 265.

[0059] The temperature of the showerhead 28 can be controlled by controlling the pressure or amount of the heat regulating gas collected in the concave cavity grooves 265 divided by the plurality of partition bars 300. At this time, the temperature of the showerhead 28 at a specific position can be controlled by changing the pressure or amount of the heat regulating gas in the concave cavity grooves 265 divided by the plurality of partition bars 300.

[0060] exist Figure 6 In at least one of the concave groove sections of the concave groove 265 divided by the plurality of dividing bars 300 in the exemplary embodiment, the process gas moving channel 262 and the heat regulating gas moving channel 264 are densely arranged adjacent to each other at unequal intervals. In addition, in at least another concave groove section of the concave groove 265 divided by the plurality of dividing bars 300, the process gas moving channel 262 and the heat regulating gas moving channel 264 may be densely arranged adjacent to each other at unequal intervals or arranged at equal intervals.

[0061] In this embodiment, the temperature of the showerhead 28 can also be controlled by controlling the pressure or amount of the heat regulating gas collected in the concave cavity grooves 265 divided by the plurality of partition bars 300. At this time, the temperature of the showerhead 28 at a specific position can be controlled by changing the pressure or amount of the heat regulating gas in the concave cavity grooves 265 divided by the plurality of partition bars 300.

[0062] exist Figure 7In the exemplary embodiment of the embodiment of the present invention, at least one of the concave groove sections of the concave groove 265 divided by the plurality of partition bars 300 is provided with a plurality of process gas moving channels 262-1, 262-2 and 262-3 in the partition wall portion 266. In this case, the plurality of heat regulating gas moving channels 264-1, 264-2 and 264-3 may be provided in the same number and / or arrangement as the number and / or arrangement of the process gas moving channels 262-1, 262-2 and 262-3. For example, Figure 7 As shown, in the outer one of the concave cavity groove sections of the concave cavity groove 265, the process gas moving channels 262-1, 262-2 and 262-3 and the heat regulating gas moving channels 264-1, 264-2 and 264-3 are each arranged in the form of groups of three adjacent channels so that each group has a triangle shape.

[0063] In this embodiment, the temperature of the showerhead 28 can also be controlled by controlling the pressure or amount of the heat regulating gas collected in the concave cavity grooves 265 divided by the plurality of partition bars 300. At this time, the temperature of the showerhead 28 at a specific position can be controlled by changing the pressure or amount of the heat regulating gas in the concave cavity grooves 265 divided by the plurality of partition bars 300.

[0064] Figure 8 is a schematic diagram showing electrical connections between electrodes embedded in a heat transfer pad and a showerhead according to an example embodiment, Fig. 9 is a schematic diagram showing electrical connections between an electrode embedded in a heat transfer pad and a showerhead according to another embodiment.

[0065] exist Figure 8 The electrodes 250 embedded in the heat transfer pad 26 of the exemplary embodiment are direct current (DC) electrodes, and the DC electrodes are monopolar electrodes.

[0066] The dielectric material of the heat transfer pad 26 includes AlN and Al 2 O 3 The showerhead 28 comprises a silicon material doped with a conductive material. The doped conductive material may be boron (B).

[0067] By providing a + electrode for the unipolar electrode of heat transfer pad 26, a negative (-) electrode is induced in showerhead 28 due to the presence of a portion of heat transfer pad 26 formed of dielectric material between electrode 250 (e.g., DC electrode) and showerhead 28. The negative (-) electrode originates from a plasma source within processing chamber 10.

[0068] Heat transfer pad 26 and showerhead 28 are mechanically coupled by bolting or riveting, and may also be electrically clamped coupled by applying voltage to electrodes 250 of heat transfer pad 26 , thereby conducting opposite voltage to showerhead 28 .

[0069] exist Fig. 9 The plurality of electrodes 252 embedded in the heat transfer pad 26 of the exemplary embodiment of FIG. 2 are also DC electrodes, and the DC electrodes are bipolar electrodes.

[0070] The dielectric material of the heat transfer pad 26 includes AlN and Al 2 O 3 The showerhead 28 comprises a silicon material doped with a conductive material. The doped conductive material may be Br.

[0071] By providing one of the electrodes 252 (eg, bipolar electrodes) of the heat transfer pad 26 with a + electrode and the other with a − electrode, the − electrode is charged to the showerhead 28 due to the presence of a portion of the heat transfer pad 26 formed of dielectric material between the electrode 252 and the showerhead 28 .

[0072] Even if the nozzle 28 and one of the electrodes 252 are charged with voltages of the same polarity, electrical clamping may occur due to the large potential difference.

[0073] Fig.10 is a schematic diagram illustrating the operation of plasma polymer based on showerhead temperature control in a semiconductor wafer processing apparatus according to an example embodiment of the present disclosure.

[0074] In the semiconductor wafer processing apparatus 1 according to the example embodiment, temperature control of the shower head 28 mechanically and electrically coupled to the heat transfer pad 26 is achieved as follows.

[0075] Fig.10 Part (a) shows the case where the temperature of the nozzle 28 is high. Fig.10 Part (b) shows a case where the temperature of the shower head 28 is low.

[0076] As an example, when a high aspect ratio contact etching process is performed on a wafer W on an electrostatic chuck 42 in a process chamber 10 where plasma P has been generated, the surface temperature of the showerhead 28 of the gas supply assembly 20 is a factor that greatly affects the reliability of the etching process.

[0077] When the surface temperature of the shower head 28 is high (see part (a)), blockage (no-pass, NOP) occurs during etching due to accumulation of polymer 15 of the plasma P in the direction toward the wafer W. In this case, the surface temperature of the shower head 28 should be lowered, and thus, the pressure or amount of the heat transfer gas in the gas collecting part 260 is increased. By increasing the pressure of the gas collecting part 260 (see part (b)), the heat transfer gas in the gas collecting part 260 is increased. Figure 2 ) increases the pressure or amount of the heat transfer gas in the nozzle 28, the surface temperature of the nozzle 28 decreases, and the polymer 15 of the plasma P moves toward the nozzle 28.

[0078] When the surface temperature of the shower head 28 is low (see part (b)), the polymer 15 in the plasma is concentrated on the shower head 28, resulting in a larger plasma reaction and widening of the mask, thus causing a problem of increasing the bending critical dimension (CD) of the wafer W. In this case, the surface temperature of the shower head 28 should be increased, thereby reducing the pressure or amount of the heat transfer gas in the gas collecting part 260. By reducing the pressure or amount of the heat transfer gas in the gas collecting part 260, the surface temperature of the shower head 28 is increased, and the polymer 15 in the plasma P moves toward the wafer W.

[0079] By using the above principle, the surface temperature of the showerhead 28 can be controlled at a specific position, thereby reducing the blockage (NOP) phenomenon when etching the wafer W and achieving uniform etching on the wafer W.

[0080] As described above, in the gas supply assembly and the semiconductor wafer processing apparatus according to example embodiments, the occurrence of clogging can be reduced by controlling the temperature of the showerhead at high speed even in a high aspect ratio contact process, and the bending critical dimension can be properly maintained by preventing over-etching of the mask.

[0081] In addition, in the gas supply assembly and the semiconductor wafer processing apparatus according to example embodiments, a specific wafer region where a treatment process is performed may be independently controlled, thereby obtaining efficient and stable process yield.

[0082] According to an embodiment of the present disclosure, the semiconductor wafer processing apparatus 1 may further include a controller configured to control the components of the semiconductor wafer processing apparatus 1 to perform their functions. For example, the controller may be configured to control the power supply device 12, the gas supply unit 14, the heater H, the cooler C, the power supply unit 45, the heating pattern 450, the electrode 250, etc. to perform their corresponding functions.

[0083] Although non-limiting example embodiments are shown in the drawings and described above, it will be apparent to those skilled in the art that modifications and changes may be made without departing from the scope of the present disclosure as defined by the appended claims.

Claims

1. A gas supply assembly, comprising: a thermal control panel including a heater and a cooler; a gas distribution plate below the thermal control plate and comprising at least one process gas distribution passage configured to deliver a process gas and at least one heat conditioning gas distribution passage configured to deliver a heat conditioning gas; a showerhead comprising a nozzle in communication with the at least one process gas distribution passage of the gas distribution plate, the nozzle being configured to discharge the process gas; a heat transfer pad below the gas distribution plate and contacting the showerhead, the heat transfer pad comprising: Dielectric material pad; electrodes in the dielectric material pad; at least one process gas movement channel in communication with the at least one process gas distribution passage of the gas distribution plate; and at least one heat regulating gas movement channel in communication with the at least one heat regulating gas distribution passage of the gas distribution plate; and At least one gas collecting portion is between the showerhead and the heat transfer pad and communicates with the at least one heat regulating gas moving channel of the heat transfer pad, each of the at least one gas collecting portion is a space configured to collect the heat regulating gas therein.

2. The gas supply assembly according to claim 1, wherein: The heat transfer pad also includes: a lower surface that contacts an upper closure surface of the spray head; at least one partition wall portion surrounding the at least one process gas movement channel; and a concave cavity groove which does not contact the upper closing surface of the spray head, and Wherein, each of the at least one gas collecting portion is a space between the concave cavity groove of the heat transfer pad and one of the at least one partition wall portion of the heat transfer pad.

3. The gas supply assembly according to claim 2, wherein: The concave cavity groove is divided into a plurality of concave cavity groove sections in a radial direction of the heat transfer pad by a plurality of dividing strips contacting the upper closed surface of the shower head.

4. The gas supply assembly according to claim 3, wherein: The at least one process gas moving channel is a plurality of process gas moving channels, wherein the at least one heat regulating gas moving channel is a plurality of heat regulating gas moving channels, and The plurality of processing gas moving channels and the plurality of heat regulating gas moving channels are arranged at equal intervals within the plurality of partition strips.

5. The gas supply assembly according to claim 3, wherein: The at least one process gas moving channel is a plurality of process gas moving channels, wherein the at least one heat regulating gas moving channel is a plurality of heat regulating gas moving channels, and wherein, in at least one of the plurality of concave cavity slot sections, the plurality of processing gas moving channels and the plurality of heat regulating gas moving channels are arranged adjacent to each other at unequal intervals, and in at least one of the plurality of concave cavity slot sections, the plurality of processing gas moving channels and the plurality of heat regulating gas moving channels are more densely arranged than in another concave cavity slot section among the plurality of concave cavity slot sections.

6. The gas supply assembly according to claim 3, wherein: The at least one process gas moving channel is a plurality of process gas moving channels, and Wherein, in at least one of the plurality of concave cavity slot sections, two or more of the plurality of process gas movement channels are in a single partition wall portion among the at least one partition wall portion.

7. The gas supply assembly according to claim 6, wherein: The at least one heat regulating gas moving channel is a plurality of heat regulating gas moving channels, and Wherein, the total number of the plurality of heat regulating gas moving channels is equal to the total number of the plurality of processing gas moving channels.

8. The gas supply assembly according to claim 1, wherein: The dielectric material pad includes at least one of AlN and Al2O3, and Wherein, the showerhead comprises a silicon material doped with a conductive material.

9. The gas supply assembly according to claim 1, wherein: The electrodes of the heat transfer pad are direct current electrodes, and the direct current electrodes are monopolar electrodes or bipolar electrodes.

10. The gas supply assembly of claim 9, wherein: The showerhead and the heat transfer pad are mechanically coupled to each other by bolting or riveting, and are electrically clamped by applying a first voltage to the DC electrode of the heat transfer pad so that a second voltage is conducted to the showerhead, and The first voltage and the second voltage have opposite polarities to each other, or the first voltage and the second voltage have the same polarity but different magnitudes from each other.

11. A semiconductor wafer processing device comprising: a processing chamber configured to receive a semiconductor wafer; a gas supply assembly in an upper portion of the process chamber and configured to discharge a process gas toward the semiconductor wafer; as well as an electrostatic chuck configured to support the semiconductor wafer within the processing chamber and to generate plasma by interacting with the gas supply assembly, Wherein, the gas supply assembly comprises: a thermal control panel including a heater and a cooler; a gas distribution plate below the thermal control plate and comprising at least one process gas distribution passage configured to deliver the process gas and at least one heat conditioning gas distribution passage configured to deliver a heat conditioning gas; a showerhead comprising a nozzle in communication with the at least one process gas distribution passage of the gas distribution plate, the nozzle being configured to discharge the process gas, A heat transfer pad below the gas distribution plate and contacting the showerhead, the heat transfer pad comprising: Dielectric material pad; electrodes in the dielectric material pad; at least one process gas movement channel in communication with the at least one process gas distribution passage of the gas distribution plate; and at least one heat regulating gas movement channel in communication with the at least one heat regulating gas distribution passage of the gas distribution plate; and At least one gas collecting portion is between the showerhead and the heat transfer pad and communicates with the at least one heat regulating gas moving channel of the heat transfer pad, each of the at least one gas collecting portion is a space configured to collect the heat regulating gas therein.

12. The semiconductor wafer processing equipment according to claim 11, wherein: The heat transfer pad also includes: a lower surface contacting an upper closure surface of the spray head; at least one partition wall portion surrounding the at least one process gas movement channel; and a concave cavity groove that does not contact the upper closure surface of the spray head, and Wherein, each of the at least one gas collecting portion is a space between the concave cavity groove of the heat transfer pad and one of the at least one partition wall portion of the heat transfer pad.

13. The semiconductor wafer processing equipment according to claim 12, wherein: The concave cavity groove is divided into a plurality of concave cavity groove sections in a radial direction of the heat transfer pad by a plurality of dividing strips contacting the upper closed surface of the shower head.

14. The semiconductor wafer processing equipment according to claim 13, wherein: The at least one process gas moving channel is a plurality of process gas moving channels, wherein the at least one heat regulating gas moving channel is a plurality of heat regulating gas moving channels, and The plurality of processing gas moving channels and the plurality of heat regulating gas moving channels are arranged at equal intervals within the plurality of partition strips.

15. The semiconductor wafer processing equipment according to claim 14, wherein: In at least one concave cavity slot section among the plurality of concave cavity slot sections, the plurality of processing gas moving channels and the plurality of heat regulating gas moving channels are arranged adjacent to each other at unequal intervals, and in at least one concave cavity slot section among the plurality of concave cavity slot sections, the plurality of processing gas moving channels and the plurality of heat regulating gas moving channels are more densely arranged than in another concave cavity slot section among the plurality of concave cavity slot sections.

16. The semiconductor wafer processing equipment according to claim 14, wherein: In at least one concave cavity slot section among the plurality of concave cavity slot sections, two or more of the plurality of process gas moving channels are in a single partition wall section among the at least one partition wall section.

17. The semiconductor wafer processing equipment according to claim 16, wherein: A total number of the plurality of heat regulating gas moving channels is equal to a total number of the plurality of process gas moving channels.

18. The semiconductor wafer processing equipment according to claim 11, wherein: The dielectric material pad includes at least one of AlN and Al2O3, and Wherein, the showerhead comprises a silicon material doped with a conductive material.

19. The semiconductor wafer processing equipment according to claim 11, wherein: The electrodes of the heat transfer pad are direct current electrodes, and the direct current electrodes are monopolar electrodes or bipolar electrodes.

20. The semiconductor wafer processing equipment according to claim 19, wherein: The showerhead and the heat transfer pad are mechanically coupled to each other by bolting or riveting, and are electrically clamped by applying a first voltage to the DC electrode of the heat transfer pad so that a second voltage is conducted to the showerhead, and The first voltage and the second voltage have opposite polarities to each other, or the first voltage and the second voltage have the same polarity but different magnitudes from each other.

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