Driving energy taking system and driving energy taking method of power semiconductor device

Abstract

The invention relates to a driving energy taking system and method of a power semiconductor device, and the system comprises an energy storage unit which is used for providing a first voltage, a current limiting unit which is electrically connected with the energy storage unit and is used for carrying out the current limiting of a power semiconductor device module, and storing the energy released from the energy storage unit, and a voltage stabilizing unit which is electrically connected with the energy storage unit and is used for carrying out the current limiting of the power semiconductor device module. The voltage stabilizing unit is electrically connected with the current limiting unit and the voltage stabilizing unit and is used for stabilizing the voltage of the energy storage unit, the auxiliary energy taking unit is electrically connected with the current limiting unit and the voltage stabilizing unit and is used for taking energy from the current limiting unit and providing a second voltage, and the conversion and driving unit is electrically connected with the energy storage unit and the auxiliary energy taking unit and is used for converting the energy into the second voltage under the condition that the first voltage is obtained. The first voltage is converted to drive a power semiconductor device in the power semiconductor device module under the condition that the first voltage is acquired, the second voltage is converted to drive the power semiconductor device under the condition that the second voltage is acquired, the system disclosed by the invention reduces the power demand of the drive, provides standby power supply for the drive, and significantly improves the reliability and stability of drive energy acquisition.

Description

Technical Field

[0001] The present application relates to the technical field of power semiconductor devices, and in particular to a driving energy acquisition system and a driving energy acquisition method for a power semiconductor device. Background Art

[0002] As an important conversion device in the field of power electronics, the Modular Multilevel Voltage Source Converter (MMVSC) is widely used in the fields of high-voltage direct current transmission (HVDC), renewable energy access, and electric vehicle charging stations. Among them, the turn-off thyristor, as a key power switch, requires a large driving power to ensure its reliable shutdown and conduction. In the prior art, the drive circuit is powered by the bus capacitor through the DC / DC converter, but this method is difficult to implement under high voltage conditions, with high cost and large losses. Specifically, the input voltage of the DC / DC converter needs to reach the withstand voltage of the turn-off thyristor (usually 4.5kV, 6.5kV, 8.5kV), and high power is difficult to achieve. In addition, as a key driving power source, the failure of the DC / DC converter will not only lead to the interruption of the driving power, but also may cause the entire converter to lose control, making it difficult to ensure the reliability and stability of the power system. Summary of the invention

[0003] The present application provides a driving energy acquisition system and a driving energy acquisition method for a power semiconductor device, so as to solve the problem in the related art that it is difficult to realize high power of the power semiconductor device due to excessive power demand of the DC / DC converter.

[0004] According to one aspect of the present application, a driving energy acquisition system for a power semiconductor device is provided, which is electrically connected to a power semiconductor device module, and the driving energy acquisition system includes: an energy storage unit, which is used to provide a first voltage; a current limiting unit, which is electrically connected to the energy storage unit, and is used to limit the current of the power semiconductor device module and store energy released from the energy storage unit; a voltage stabilizing unit, which is electrically connected to the energy storage unit, and is used to stabilize the voltage of the energy storage unit; an auxiliary energy acquisition unit, which is electrically connected to the current limiting unit and the voltage stabilizing unit, respectively, and is used to obtain energy from the current limiting unit and provide a second voltage; a conversion and driving unit, which is electrically connected to the energy storage unit and the auxiliary energy acquisition unit, respectively, and is used to convert the first voltage to drive the power semiconductor device module when the first voltage is obtained, and to convert the second voltage to drive the power semiconductor device module when the second voltage is obtained.

[0005] Optionally, the conversion and driving unit includes: a driving unit, electrically connected to the power semiconductor device module, for driving the power semiconductor device module; a first conversion unit, electrically connected to the energy storage unit and the driving unit, respectively, for converting the first voltage into a third voltage so that the driving unit drives the power semiconductor device in the power semiconductor device module; a second conversion unit, electrically connected to the auxiliary energy extraction unit and the driving unit, respectively, for converting the second voltage into a fourth voltage so that the driving unit drives the power semiconductor device.

[0006] Optionally, the auxiliary energy acquisition unit includes: a first energy storage module, used to store energy for the auxiliary energy acquisition unit; a switch module, electrically connected to the first energy storage module, used to connect or disconnect the auxiliary energy acquisition unit and the voltage stabilizing unit; a voltage stabilization control module, electrically connected to the first energy storage module and the switch module, respectively, used to provide a first threshold voltage, when the second voltage is greater than or equal to the first threshold voltage, the first energy storage module stops charging, and the switch module connects the first energy storage module and the voltage stabilizing unit.

[0007] Optionally, the voltage stabilizing control module includes a first voltage stabilizing diode and a first resistor, the switching module includes a first thyristor, and the first energy storage module includes a first capacitor and a first diode; the auxiliary energy extraction unit also includes a first port, a second port, a third port and a fourth port; the first port is electrically connected to the current limiting unit, the first voltage stabilizing diode, the first diode and the first thyristor respectively; the second port is electrically connected to the voltage stabilizing unit, the first resistor, the first thyristor and the first capacitor respectively; the third port is electrically connected to the conversion and driving unit, the first diode and the first capacitor respectively; the fourth port is electrically connected to the conversion and driving unit, the first capacitor, the first thyristor and the first resistor respectively; the first voltage stabilizing diode is also electrically connected to the first resistor, the first thyristor and the first diode respectively; the first capacitor is also electrically connected to the first diode; the first thyristor is also electrically connected to the first resistor, the first voltage stabilizing diode and the first diode respectively.

[0008] Optionally, the voltage stabilizing unit includes a second capacitor and a second resistor, the second capacitor is electrically connected to the power semiconductor device module, the energy storage unit, the second resistor and the auxiliary energy extraction unit, respectively, and the second resistor is also electrically connected to the current limiting unit and the energy storage unit, respectively.

[0009] Optionally, the energy storage unit includes a third capacitor, one end of the third capacitor is electrically connected to the conversion and driving unit, the current limiting unit and the second resistor respectively, and the other end of the third capacitor is electrically connected to the second capacitor and the power semiconductor device module respectively.

[0010] Optionally, the current limiting unit includes a first inductor, one end of the first inductor is electrically connected to the conversion and driving unit, the energy storage unit and the voltage stabilizing unit respectively, and the other end of the first inductor is electrically connected to the auxiliary energy extraction unit and the power semiconductor device module respectively.

[0011] Optionally, the drive energy acquisition system also includes a switching unit, which is electrically connected between the auxiliary energy acquisition unit and the conversion and drive unit and between the energy storage unit and the conversion and drive unit, and is used to: connect the energy storage unit with the first conversion unit, and disconnect the conversion and drive unit from the auxiliary energy acquisition unit, so that the conversion and drive unit obtains the first voltage; when the conversion and drive unit obtains the second voltage, connect the auxiliary energy acquisition unit with the second conversion unit, and disconnect the conversion and drive unit from the energy storage unit, so that the conversion and drive unit obtains the second voltage.

[0012] According to another aspect of the present application, a driving energy acquisition method for a power semiconductor device is provided, which is applied to the driving energy acquisition system of the above-mentioned power semiconductor device, wherein the driving energy acquisition system is electrically connected to a power semiconductor device module, and the driving energy acquisition method comprises: controlling an energy storage unit in the driving energy acquisition system to provide a first voltage to supply energy to a conversion and driving unit in the driving energy acquisition system, and causing a current limiting module in the driving energy acquisition system to store a first energy, wherein the first energy is part of the energy released by the energy storage unit, and an auxiliary energy acquisition unit in the driving energy acquisition system obtains energy from the current limiting module; controlling the auxiliary energy acquisition unit to provide a second voltage to supply energy to the conversion and driving unit, wherein the second energy in the auxiliary energy acquisition unit is released to a voltage stabilizing unit in the driving energy acquisition system, and the second energy is part of the first energy remaining except for the energy stored in the auxiliary energy acquisition unit.

[0013] Optionally, the conversion and driving unit includes: a driving unit, electrically connected to the power semiconductor device module; a first conversion unit, electrically connected to the energy storage unit and the driving unit, respectively; and a second conversion unit, electrically connected to the auxiliary energy extraction unit and the driving unit, respectively; the controlling the energy storage unit in the driving energy extraction system to provide a first voltage to supply energy to the conversion and driving unit in the driving energy extraction system includes: controlling the energy storage unit to supply energy to the first conversion unit, so that the first conversion unit converts the first voltage into a third voltage, thereby driving the power semiconductor device in the power semiconductor device module through the driving unit; the controlling the auxiliary energy extraction unit to provide a second voltage to supply energy to the conversion and driving unit includes: when a fault of the first conversion unit is detected or the output voltage is lower than a preset value, controlling the auxiliary energy extraction unit to supply energy to the second conversion unit, so that the second conversion unit converts the second voltage into a fourth voltage, thereby driving the power semiconductor device through the driving unit.

[0014] The driving energy acquisition system and driving energy acquisition method of the power semiconductor device provided by the present application, the introduction of the auxiliary energy acquisition unit, can extract part of the energy from the current limiting unit, effectively save the part of the energy and serve as the conversion and driving unit function, realize the reuse of energy, and then effectively reduce the power demand for the conversion and driving unit, so that the conversion and driving unit only needs to bear the base state driving power, and the peak power demand is borne by the auxiliary energy acquisition unit, which significantly reduces the power specification of the conversion and driving unit, thereby reducing the difficulty and cost of high-power implementation of the device. In addition, by setting the energy storage unit and the auxiliary energy acquisition unit, energy supply and conversion under different working conditions are realized, and the stability and reliability of the drive system are improved. In normal operation, the system is mainly powered by the energy storage unit, and when the voltage of the energy storage unit is insufficient or the connection between the energy storage unit and the conversion and driving unit fails, the auxiliary energy acquisition unit can independently provide a second voltage as a backup source for driving, ensuring the continuity of the driving voltage and the normal operation of the power semiconductor device or fault handling. The current limiting unit stores electromagnetic energy when the power semiconductor device module switches, and the auxiliary energy extraction unit can intercept this energy from the current limiting unit, reducing the energy waste dissipated in the form of heat energy, thereby simplifying thermal management and improving system efficiency. In addition, the setting of the current limiting unit and the voltage stabilizing unit further enhances the safety and voltage stability of the system, effectively avoids damage to power semiconductor devices caused by overcurrent and voltage fluctuations, and improves the performance and application scope of the overall system. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] The drawings described herein are used to provide a further understanding of the present application and constitute a part of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0016] Figure 1 is a structural schematic diagram of a driving energy acquisition system for a power semiconductor device provided in an embodiment of the present application;

[0017] Figure 2 It is a schematic diagram of the circuit structure of a driving energy-taking system for a power semiconductor device provided in an embodiment of the present application;

[0018] Figure 3 is a schematic diagram of a circuit structure of an auxiliary energy acquisition unit provided in an embodiment of the present application;

[0019] Figure 4 It is a schematic diagram of the circuit structure of another driving energy-harvesting system of a power semiconductor device provided in an embodiment of the present application.

[0020] Figure 5 It is a schematic diagram of a flow chart of a method for driving and obtaining energy of a power semiconductor device provided in an embodiment of the present application;

[0021] Figure 6 It is a flow chart of another method for driving and obtaining energy of a power semiconductor device provided in an embodiment of the present application.

[0022] The above drawings include the following reference numerals:

[0023] 10. Energy storage unit; 20. Current limiting unit; 30. Auxiliary energy acquisition unit; 301. First energy storage module; 302. Switch module; 303. Voltage stabilization control module; 40. Voltage stabilization unit; 50. Conversion and drive unit; 501. First conversion unit; 502. Second conversion unit; 503. Drive unit; 60. Power semiconductor device module; 70. Switching unit. DETAILED DESCRIPTION

[0024] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present application can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0025] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present application.

[0026] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable where appropriate, so that the embodiments of the present application described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device comprising a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0027] As introduced in the background technology, the turn-off thyristor is a key power switch, which requires a large driving power to ensure its reliable shutdown and conduction. The existing technology uses the bus capacitor to power the driving circuit through the DC / DC converter. This method is difficult to implement under high voltage, high cost, and large loss. As a key driving power source, the failure of the DC / DC converter will not only lead to the interruption of the driving power, but also may cause the entire converter to lose control, making it difficult to ensure the reliability and stability of the power system.

[0028] According to an embodiment of the present application, a power semiconductor device drive energy acquisition system is provided, which is electrically connected to a power semiconductor device module 60, such as Figure 1 As shown, the drive energy acquisition system includes: an energy storage unit 10, which is used to provide a first voltage; a current limiting unit 20, which is electrically connected to the energy storage unit 10, and is used to limit the current of the power semiconductor device module 60 and store the energy released from the energy storage unit 10; a voltage stabilizing unit 40, which is electrically connected to the energy storage unit 10, and is used to stabilize the voltage of the energy storage unit 10; an auxiliary energy acquisition unit 30, which is electrically connected to the current limiting unit 20 and the voltage stabilizing unit 40, respectively, and is used to obtain energy from the current limiting unit 20 and provide a second voltage; a conversion and driving unit 50, which is electrically connected to the energy storage unit 10 and the auxiliary energy acquisition unit 30, respectively, and is used to convert the first voltage to drive the power semiconductor device module 60 when the first voltage is obtained, and to convert the second voltage to drive the power semiconductor device module 60 when the second voltage is obtained.

[0029] In this embodiment, during the state switching of the power semiconductor device, the auxiliary energy extraction unit 30 can intercept and utilize the stored energy from the current limiting unit 20 for the function of the conversion and drive unit 50, so that the conversion and drive unit 50 no longer relies solely on the first voltage provided by the energy storage unit 10 as a driving power source, but reduces its power burden to a certain extent. The second voltage provided by the auxiliary energy extraction unit 30 is used as a supplement. The high-power conversion and drive unit 50 is difficult to design and has high cost. This embodiment reduces the power requirements of the main conversion and drive unit 50, making the design and manufacture of the conversion and drive unit 50 simpler and reducing costs. This architecture reduces the size and complexity of the main drive unit in the conversion and drive unit 50, while also avoiding the design and manufacturing challenges caused by the excessive power of the conversion and drive unit 50, thereby reducing the difficulty and cost of implementing the entire system.

[0030] Furthermore, the independent power supply capability of the auxiliary energy acquisition unit 30 ensures that the drive system can maintain basic operation even if the main conversion and drive unit 50 fails or fails. It can provide the necessary second voltage to drive the power semiconductor devices, so that the system can continue to operate, at least to keep the system stable for a short time or a limited time, greatly improving the reliability of the system.

[0031] Specifically, the current limiting unit 20 stores electromagnetic energy inside the power semiconductor device during its on and off process. This energy is often not fully utilized, but dissipated in some form. However, the auxiliary energy acquisition unit 30 in the present application can effectively recover this energy and convert it into a second voltage for driving the power semiconductor device. This process not only avoids the waste of energy, but also reduces the heat caused by energy dissipation, significantly improves the energy utilization efficiency of the system, and simplifies thermal management.

[0032] In some optional embodiments, such as Figure 2As shown, the conversion and driving unit 50 includes: a driving unit 503, which is electrically connected to the power semiconductor device module 60 and is used to drive the power semiconductor devices (S1, S2) in the power semiconductor device module 60; a first conversion unit 501, which is electrically connected to the energy storage unit 10 and the driving unit 503, respectively, and is used to convert the first voltage into a third voltage, so that the driving unit 503 drives the power semiconductor device module 60; a second conversion unit 502, which is electrically connected to the auxiliary energy acquisition unit 30 and the driving unit 503, respectively, and is used to convert the second voltage into a fourth voltage, so that the driving unit 503 drives the power semiconductor device module 60. When the conversion and driving unit 50 fails and the first conversion unit 501 cannot normally convert the first voltage to drive the power semiconductor device, the auxiliary energy acquisition unit 30 can serve as a backup energy source to provide the second voltage, and the second conversion unit 502 is responsible for converting the second voltage into the fourth voltage to drive the power semiconductor device. This design ensures that even if the main drive path fails, the system can still maintain basic operation, perform necessary fault processing or switch to a safe state, allowing the system to flexibly switch energy sources under different working conditions, thereby significantly improving the reliability of the entire system.

[0033] Specifically, Figure 2 As shown, the first conversion unit 501 and the second conversion unit 502 include but are not limited to DC / DC converters, which can be selected by those skilled in the art according to actual needs, and this application does not make any specific limitations.

[0034] Specifically, Figure 2 As shown, the driving unit 503 includes but is not limited to two driving modules, which can be selected by those skilled in the art according to actual needs, and this application does not make any specific limitation.

[0035] In some optional embodiments, such as Figures 2 to 3As shown, the auxiliary energy acquisition unit 30 includes: a first energy storage module 301, used to store energy for the auxiliary energy acquisition unit 30; a switch module 302, electrically connected to the first energy storage module 301, used to connect or disconnect the auxiliary energy acquisition unit 30 and the voltage stabilizing unit 40; a voltage stabilizing control module 303, electrically connected to the first energy storage module 301 and the switch module 302, respectively, for providing a first threshold voltage, and stopping the first energy storage module 301 from charging when the second voltage is greater than or equal to the first threshold voltage, and enabling the switch module 302 to connect the auxiliary energy acquisition unit 30 and the voltage stabilizing unit 40. The first energy storage module 301 can absorb and store energy from the current limiting unit 20. As the energy of the current limiting unit 20 is transferred, the first energy storage module 301 is gradually charged until the energy stored therein reaches a level sufficient to be converted into a second voltage. At this time, the switch module 302 is turned on under the control of the voltage stabilizing control module 303, and the auxiliary energy extraction unit 30 is connected to the voltage stabilizing unit 40, so that excess energy can be released to the voltage stabilizing unit 40. This design can automatically adjust the charging and discharging process of the auxiliary energy extraction unit 30, avoid damage to the first energy storage module 301 due to overcharging or over-discharging, extend the service life of the first energy storage module 301, and thereby improve the reliability of the entire system.

[0036] In some optional embodiments, such as Figures 2 to 3 As shown, the voltage stabilizing control module 303 includes a first voltage stabilizing diode D4 and a first resistor R1, the switch module 302 includes a first thyristor S3, and the first energy storage module 301 includes a first capacitor C1 and a first diode D3; the auxiliary energy taking unit 30 also includes a first port T3, a second port T4, a third port T5 and a fourth port T6; wherein the first port T3 is electrically connected to the current limiting unit 20, the first voltage stabilizing diode D4, the first diode D3 and the first thyristor S3 respectively; the second port T4 is electrically connected to the voltage stabilizing unit 40, the first resistor R1, the first thyristor S3 and the first capacitor C1 respectively; the third port T5 is electrically connected to the conversion and The driving unit 50, the first diode D3 and the first capacitor C1 are electrically connected; the fourth port T6 is electrically connected to the conversion and driving unit 50, the first capacitor C1, the first thyristor S3 and the first resistor R1 respectively; the first voltage stabilizing diode D4 is electrically connected to the first resistor R1, the first thyristor S3, the first port T3 and the first diode D3 respectively; the first capacitor C1 is electrically connected to the second port T4, the third port T5, the fourth port T6 and the first diode D3 respectively; the first thyristor S3 is electrically connected to the first port T3, the second port T4, the fourth port T6, the first resistor R1, the first voltage stabilizing diode D4 and the first diode D3 respectively.

[0037] In this embodiment, the current limiting module injects current into the first capacitor C1 through the first diode D3, and the voltage of the first capacitor C1 rises. When the voltage of the first capacitor C1 reaches the action threshold of the first voltage stabilizing diode D4, that is, the second voltage, the small current of the first voltage stabilizing diode D4 generates a voltage on the first resistor R1 and triggers the first thyristor S3 to turn on, and the remaining current enters the voltage stabilizing unit 40. In a cycle, the voltage of the first capacitor C1 remains stable, and the drive is powered through the second conversion unit 502. The design of the first capacitor C1, the first voltage stabilizing diode D4 and the first thyristor S3 forms an independent energy supply path. When the main conversion and driving unit 50 cannot work normally, the auxiliary energy taking unit 30 can continue to provide the stabilized second voltage, which is converted into the fourth voltage through the second conversion unit 502 to continue to drive the power semiconductor device. Through this circuit design, the driving unit 503 can use this part of the pre-stored energy when high-power driving is required, instead of relying entirely on the power output of the main energy storage unit 10, and can achieve precise energy management and automatic voltage control. Exemplarily, the first thyristor S3 is a turn-off thyristor, such as Figure 3 As shown, the anode of the first thyristor S3 is respectively connected to the positive electrode of the first diode D3 and the negative electrode of the first voltage zener diode D4, the cathode of the first thyristor S3 is connected to one end of the first resistor R1, and the control electrode of the first thyristor S3 is respectively connected to the other end of the first resistor R1 and the positive electrode of the first voltage zener diode D4.

[0038] Exemplarily, the voltage stabilizing control module in the auxiliary energy extraction unit also includes an overvoltage protection diode, which is connected in parallel at both ends of the first capacitor. By connecting the above-mentioned overvoltage protection diode in parallel, it can be ensured that the first capacitor will not be damaged by overvoltage when the voltage stabilizing diode fails or the system voltage suddenly increases, wherein the overvoltage protection diode is connected in parallel at both ends of the first capacitor, and the overvoltage protection diode is in a cut-off state under normal operating voltage, which will not affect the charging process of the first capacitor, and when the voltage of the first capacitor exceeds the third threshold voltage, the overvoltage protection diode is turned on, and the excess energy is released to the voltage stabilizing unit to prevent the first capacitor from overcharging, and the third threshold voltage is higher than the action voltage of the voltage stabilizing diode and lower than the maximum safe voltage of the first capacitor, so as to ensure that when the voltage stabilizing diode fails or other abnormalities cause the voltage of the first capacitor to increase abnormally, the overvoltage protection diode can be turned on in time to avoid overvoltage damage to the first capacitor.

[0039] In the above specific implementation, by setting an overvoltage protection diode, it is ensured that the first capacitor can respond quickly in the case of overvoltage, and no additional burden is imposed on the system during normal operation, thereby ensuring the stability and reliability of the auxiliary energy extraction unit and providing additional safety protection for the entire system. This design not only reduces the system risk caused by failures, but also optimizes the energy management strategy and improves the overall energy efficiency and thermal management performance of the system.

[0040] In some optional embodiments, such as Figure 2 As shown, the voltage stabilizing unit 40 includes a second capacitor C CL and the second resistor R s , the second capacitor C CL respectively connected to the power semiconductor device module 60, the energy storage unit 10, and the second resistor R s The second resistor R s The auxiliary energy taking unit 30 is also electrically connected to the current limiting unit 20 and the energy storage unit 10. The electromagnetic energy stored in the auxiliary energy taking unit 30 flows into and is stored in the second capacitor C CL , resulting in the second capacitor C CL The potential rises above the potential of the energy storage unit 10, and the excess energy represented by the potential difference passes through the second resistor R s Dissipated as heat energy, this design converts excess electromagnetic energy into heat energy to improve the voltage stability of the system and reduce the impact of voltage fluctuations on power semiconductor devices.

[0041] In some optional embodiments, such as Figure 2 As shown, the energy storage unit 10 includes a third capacitor C DC , the third capacitor C DC One end of each of the two resistors R s Electrical connection, the third capacitor C DC The other end is connected to the second capacitor C CL When the power semiconductor device switches the switch state to the first state, the third capacitor C DC The current limiting unit 20 discharges to the outside, and the current limiting unit 20 has current passing through it and stores electromagnetic energy. At the same time, the third capacitor C DC The first conversion unit 501 is used to supply power to the driver. DC The third capacitor C supports the stability of the DC bus voltage in the circuit, filters out high-frequency noise in the input or output voltage, smoothes the voltage waveform, and in the transient process of the circuit, such as load changes or power fluctuations. DC It can absorb or release energy, act as a buffer, avoid sharp changes in voltage in the circuit, and protect other components in the circuit.

[0042] In some optional embodiments, such as Figure 2 As shown, the current limiting unit 20 includes a first inductor L i , the first inductor L i One end of the first inductor L is electrically connected to the conversion and driving unit 50, the energy storage unit 10 and the voltage stabilizing unit 40 respectively. iThe other end of the first inductor L is electrically connected to the auxiliary energy acquisition unit 30 and the power semiconductor device module 60. i In the circuit, the current cannot change instantaneously, which prevents the sudden change of the current. Therefore, the rapid rise of the current can be limited at the moment when the power semiconductor device is turned on, thereby preventing the device from being subjected to excessive current shock and protecting the device from damage. At the same time, the first inductor L i The electromagnetic energy released during the switching process of power semiconductor devices is accumulated to provide an energy source for auxiliary units.

[0043] Specifically, Figure 2 and Figure 3 As shown, the voltage stabilizing unit 40 may include a second capacitor C CL and the second resistor R s , the energy storage unit 10 may include a third capacitor C DC The current limiting unit 20 includes a first inductor L i , the first inductor L i One end of each of the two resistors R s And the third capacitor C DC Electrical connection, first inductor L i One end of each of the power supply terminals is electrically connected to the first port T3 of the auxiliary energy taking unit 30 and the power semiconductor device module 60 .

[0044] For example, Figure 4 As shown, a driving energy-taking system for a power semiconductor device using a full-bridge module is also shown, wherein each bridge arm in the power semiconductor device module 60 includes two turn-off thyristors and their corresponding anti-parallel diodes, wherein the turn-off thyristors S1, S2, S5, S6 and their anti-parallel diodes D1, D2, D5, D6 form a bridge arm, that is, the turn-off thyristor S1 is connected in parallel with the diode D1, the turn-off thyristor S2 is connected in parallel with the diode D2, the turn-off thyristor S5 is connected in parallel with the diode D5, the turn-off thyristor S6 is connected in parallel with the diode D6, and the part of the turn-off thyristor S1 connected in parallel with the diode D1 and the part of the turn-off thyristor S5 connected in parallel with the diode D5 are connected in series to form a bridge arm, and the turn-off thyristor S1 is connected in parallel with the diode D1 and the part of the turn-off thyristor S5 connected in parallel with the diode D5 are connected in series to form a bridge arm. The part of the thyristor S2 connected in parallel with the diode D2 and the part of the turn-off thyristor S6 connected in parallel with the diode D6 are connected in series to form another bridge arm. The two DC / DC converters independently control the driving unit 503. The driving unit 503 includes driving DRV1, driving DRV2, driving DRV3 and driving DRV4. Driving DRV1 controls the turn-off thyristor S1, driving DRV2 controls the turn-off thyristor S2, driving DRV3 controls the turn-off thyristor S5, driving DRV4 controls the turn-off thyristor S6, energy storage unit 10, current limiting unit 20, auxiliary energy taking unit 30, voltage stabilizing unit 40, conversion and driving unit 50, first conversion unit 501, second conversion unit 502, first inductor Li , the third capacitor C DC , the second capacitor C CL , the second resistor R s The connection methods of port T1 and port T2 refer to the above embodiments, and will not be described in detail in this embodiment. Figure 4 The power semiconductor device module 60 shown has three states: a forward state, a blocking state, and a reverse state.

[0045] In some optional embodiments, such as Figure 2 As shown, the system also includes a switching unit 70, which is electrically connected between the auxiliary energy extraction unit 30 and the conversion and drive unit 50 and the energy storage unit 10 and the conversion and drive unit 50. The switching unit 70 is used to connect the energy storage unit 10 with the first conversion unit 501, and disconnect the conversion and drive unit 50 from the auxiliary energy extraction unit 30, and the conversion and drive unit 50 obtains a first voltage. The switching unit 70 is used to connect the auxiliary energy extraction unit 30 with the first conversion unit 501, and disconnect the conversion and drive unit 50 from the energy storage unit 10, and the conversion and drive unit 50 obtains a second voltage. The above-mentioned intelligent switching mechanism can automatically adjust the energy source according to the system operation state. The above-mentioned switching unit can be set according to the prior art, and the embodiments of the present application are not specifically limited.

[0046] For example, Figure 2 and Figure 3 As shown, a driving energy-taking system of a power semiconductor device using a half-bridge module is shown, wherein the power semiconductor device module 60 includes a turn-off thyristor S1, a turn-off thyristor S2, a diode D1, a diode D2, a port T1 and a port T2, wherein the turn-off thyristors S1, S2 and their anti-parallel diodes D1, D2 form a bridge arm, namely, the turn-off thyristor S1 is connected in parallel with the diode D1, the turn-off thyristor S2 is connected in parallel with the diode D2, the part of the turn-off thyristor S1 connected in parallel with the diode D1 is connected in series with the part of the turn-off thyristor S2 connected in parallel with the diode D2, and one end of the part of the turn-off thyristor S1 connected in parallel with the diode D1 is respectively connected to the first inductor L i One end of the thyristor S2 and the first port T3 are electrically connected, and one end of the part of the thyristor S2 and the diode D2 connected in parallel is respectively connected to the second capacitor C CL , the third capacitor C DC One end is electrically connected and grounded.

[0047] In the above example, if Figure 2As shown, the first conversion unit 501 and the second conversion unit 502 are both DC / DC converters, and the driving unit 503 includes a driving unit DRV1 and a driving unit DRV2. The first conversion unit 501 and the second conversion unit 502 independently control the driving unit DRV1 and the driving unit DRV2. DRV1 controls the turn-off thyristor S1, and DRV2 controls the turn-off thyristor S2.

[0048] In the above example, the first inductor L i It is used to limit the current rise rate when the turn-off thyristors S1 and S2 are turned on. The clamping circuit is used to limit the first inductance L when the turn-off thyristors S1 and S2 are turned off. i When the turn-off thyristor S1 is turned on and the turn-off thyristor S2 is blocked, the third capacitor C DC Through the first inductor L i For external discharge, the first conversion unit 501 is controlled by the switching unit 70 to provide power for the driver, and at the same time, the first inductor L i When the switch-off thyristor S2 is turned on and the switch-off thyristor S1 is blocked, the first inductor L i The stored electromagnetic energy flows unidirectionally through the first diode D3 and is stored in the first capacitor C1. The voltage of the first capacitor C1 rises. When the voltage of the first capacitor C1 reaches the action threshold of the first voltage stabilizing diode D4, the small current of the first voltage stabilizing diode D4 generates a voltage on the first resistor R1 and triggers the first thyristor S3 to turn on. The voltage of the first capacitor C1 remains stable. The second conversion unit 502 is controlled by the switching unit 70 to supply power to the driving unit 503. The remaining current flows into and is stored in the second capacitor C CL When the second capacitor C CL The potential rises above the third capacitor C DC , the excess energy passes through the second resistor R s Dissipated as heat energy, the above process repeats.

[0049] In the above example, the second capacitor C CL Connected to the first conversion unit 501, the second capacitor C CL When the potential rises to the second threshold, the second capacitor C CL The driving power is supplied by the first conversion unit 501 .

[0050] The above-mentioned switching unit may include: an energy acquisition switching module, which is used to connect the energy storage unit with the first conversion unit, and disconnect the conversion and drive unit from the auxiliary energy acquisition unit, so that the conversion and drive unit obtains the first voltage. When the conversion and drive unit obtains the second voltage, the auxiliary energy acquisition unit is connected to the second conversion unit, and the conversion and drive unit is disconnected from the energy storage unit, so that the conversion and drive unit obtains the second voltage.

[0051] Exemplarily, the switching unit further includes:

[0052] A first sensing module, connected to the energy storage unit, and used to obtain first voltage information, where the first voltage information includes an actual voltage value of the energy storage unit;

[0053] A second sensing module is connected to the auxiliary energy acquisition unit and is used to obtain second voltage information, where the second voltage information includes an actual voltage value of the auxiliary energy acquisition unit;

[0054] A sending module is used to send the first voltage information and the second voltage information to the energy acquisition switching module. When the target condition is met, the energy acquisition switching module is controlled to connect the auxiliary energy acquisition unit with the second conversion unit and disconnect the conversion and drive unit from the energy storage unit. When the target condition is not met, the energy acquisition switching module is controlled to connect the energy storage unit with the first conversion unit and disconnect the conversion and drive unit from the auxiliary energy acquisition unit, wherein the target condition includes one of the following: the actual voltage value of the auxiliary energy acquisition unit is greater than or equal to the second voltage, the actual voltage value of the energy storage unit is greater than or equal to the first preset voltage, and the actual voltage value of the energy storage unit is less than or equal to the second preset voltage.

[0055] Specifically, the third capacitor in the energy storage unit is connected to the sensor in the first sensing module to monitor the voltage state of the third capacitor in real time; the auxiliary energy extraction unit is connected to the sensor in the second sensing module to monitor its energy storage state, including the voltage of the auxiliary energy extraction unit; the real-time data from the sensing module is received to monitor the energy storage of the auxiliary energy extraction unit; when the auxiliary energy extraction unit does not reach the second voltage, the energy storage unit is switched to the conversion and drive unit function; when the auxiliary energy extraction unit reaches the second voltage, the auxiliary energy extraction unit is switched to the conversion and drive unit function; when the first conversion unit fails, the voltage of the third capacitor rises to the first preset voltage, and the auxiliary energy extraction unit is switched to supply energy to the second conversion unit; when the energy storage unit fails, when the voltage of the third capacitor drops to the second preset voltage, the auxiliary energy extraction unit is switched to supply energy to the second conversion unit. By analyzing the voltages of the third capacitor and the auxiliary energy extraction unit, the switching unit can decide when to switch the energy supply to avoid overcharging or energy waste.

[0056] By implementing the above dynamic energy acquisition strategy, the auxiliary energy acquisition unit can not only intercept and utilize energy more effectively, but also respond to system changes in real time, ensuring that the driving energy acquisition method of high-voltage and large-capacity power semiconductor devices can achieve optimal performance under various operating conditions. By controlling the auxiliary energy acquisition unit through the switching unit of this embodiment, not only the power demand of the conversion and drive unit is reduced, the circuit design is simplified, and the manufacturing cost is reduced, but also through information interaction and dynamic switching, the stable operation of the system in the face of faults is ensured, and the overall reliability is improved.

[0057] According to an embodiment of the present application, a method for driving and obtaining energy for a power semiconductor device is also provided, which is applied to the above-mentioned driving and obtaining energy system for a power semiconductor device. The method embodiment provided in the embodiment of the present application can be executed in a mobile terminal, a computer terminal or a similar computing device.

[0058] It should be noted that the steps shown in the flowcharts of the accompanying drawings can be executed in a computer system such as a set of computer-executable instructions, and that, although a logical order is shown in the flowcharts, in some cases, the steps shown or described can be executed in an order different from that shown here.

[0059] Figure 5 FIG. 1 is a flow chart of a method for driving and obtaining energy from a power semiconductor device according to an embodiment of the present application. Figure 5 As shown, the driving energy acquisition method includes the following steps:

[0060] S01, controlling the energy storage unit in the drive energy taking system to provide a first voltage to supply energy to the conversion and driving unit in the drive energy taking system, and causing the current limiting module in the drive energy taking system to store the first energy, wherein the first energy is part of the energy released by the energy storage unit, and the auxiliary energy taking unit in the drive energy taking system takes energy from the current limiting module;

[0061] Energy is released from the energy storage unit, and after being regulated by the current limiting unit, part of it is intercepted and stored by the auxiliary energy extraction unit to provide backup energy for subsequent driving. The energy storage unit in the drive energy extraction system provides a first voltage to the conversion and drive unit to drive the power semiconductor device. When the energy storage unit releases energy, the current limiting unit starts to work and stores the first energy, which is part of the energy released by the energy storage unit. The auxiliary energy extraction unit extracts energy from the current limiting unit and converts the first energy into a second voltage that can be used by the drive unit. This method makes the conversion and drive unit no longer need to bear all power requirements alone, because it can obtain additional energy supply from the auxiliary energy extraction unit. Therefore, the power demand of the conversion and drive unit is reduced, the difficulty of design implementation is reduced, and the manufacturing cost is also reduced.

[0062] S02, controlling the auxiliary energy acquisition unit to provide a second voltage to supply energy to the conversion and driving unit, wherein the second energy in the auxiliary energy acquisition unit is released to the voltage stabilizing unit in the driving energy acquisition system, and the second energy is the remaining energy of the first energy except for the energy stored in the auxiliary energy acquisition unit;

[0063] During the switching process of the power semiconductor device, the current limiting module will store a part of the energy (first energy). The auxiliary energy acquisition unit takes energy from the current limiting module and converts part of the energy (second energy) into a second voltage for driving the conversion and drive unit. Since the auxiliary energy acquisition unit can provide additional energy, the need for the conversion and drive unit to directly obtain energy from the energy storage unit is reduced, thereby reducing the design power requirement of the conversion and drive unit. When the conversion and drive unit fails and cannot convert the first voltage normally, the auxiliary energy acquisition unit can be used as an independent power supply to continue to drive the power semiconductor device by providing the second voltage.

[0064] The driving energy-taking system and method of the power semiconductor device provided in the present application can effectively extract and utilize energy from the current-limiting unit by introducing an auxiliary energy-taking unit, thereby reducing energy waste, reducing the power demand of the conversion and driving unit, simplifying thermal management, and improving system efficiency. At the same time, by setting up an energy storage unit and an auxiliary energy-taking unit, the system can flexibly switch energy supply under different working conditions, thereby improving the stability and reliability of the driving system. In practical applications, this design can significantly improve the driving efficiency and reliability of power semiconductor devices, effectively reduce device damage caused by voltage fluctuations and overcurrents, extend the service life of the devices, and reduce maintenance costs. In addition, the setting of the current-limiting unit and the voltage-stabilizing unit further enhances the safety and voltage stability of the system, effectively avoids damage to power semiconductor devices caused by overcurrents and voltage fluctuations, and improves the performance of the overall system.

[0065] In some optional embodiments, the conversion and driving unit includes a driving unit, a first conversion unit and a second conversion unit, wherein the driving unit is electrically connected to the power semiconductor device module, the first conversion unit is electrically connected to the energy storage unit and the driving unit respectively, and the second conversion unit is electrically connected to the auxiliary energy extraction unit and the driving unit respectively. Figure 6 As shown, the driving energy acquisition method includes:

[0066] S101, controlling the energy storage unit to supply energy to the first conversion unit, so that the first conversion unit converts the first voltage into a third voltage, thereby driving the power semiconductor device in the power semiconductor device module through the driving unit;

[0067] The first conversion unit and the energy storage unit are main power supply units of the system. The first conversion unit converts the first voltage into a third voltage to drive the power semiconductor device to ensure the normal operation of the device.

[0068] S102, when it is detected that the first conversion unit fails or the output voltage is lower than a preset value, controlling the auxiliary energy acquisition unit to supply energy to the second conversion unit, so that the second conversion unit converts the second voltage into a fourth voltage, thereby driving the power semiconductor device through the driving unit;

[0069] When the system detects that the energy storage unit is insufficient or the first conversion unit fails, the auxiliary energy acquisition unit will assume the power supply responsibility, convert the second voltage into a fourth voltage through the second conversion unit, and drive the power semiconductor device to ensure normal driving of the power semiconductor device.

[0070] The combination of the first conversion unit and the second conversion unit not only ensures that the drive unit is supplied with stable and efficient energy under normal working conditions, but also provides a backup energy path in the event of a fault, while optimizing energy utilization and simplifying thermal management, thereby reducing system design costs, improving reliability and enhancing efficiency. In practical applications, the driving efficiency and reliability of power semiconductor devices are significantly improved, the damage to devices caused by voltage fluctuations and overcurrent is effectively reduced, the service life of devices is extended, and maintenance costs are reduced.

[0071] Specifically, the system may further include a switching unit, which is electrically connected between the auxiliary energy acquisition unit and the conversion and drive unit and between the energy storage unit and the conversion and drive unit. At this time, when the conversion and drive unit obtains a first voltage, a first control signal can be sent to the switching unit to control the switching unit to connect the energy storage unit with the first conversion unit and disconnect the conversion and drive unit from the auxiliary energy acquisition unit; and when the conversion and drive unit obtains a second voltage, a second control signal can be sent to the switching unit to control the switching unit to connect the auxiliary energy acquisition unit with the first conversion unit and disconnect the conversion and drive unit from the energy storage unit.

[0072] To sum up, the driving energy acquisition system and method of the power semiconductor device provided in the present application can not only reduce the power demand of the conversion and driving unit, reduce the implementation difficulty and manufacturing cost, and significantly improve the driving efficiency and reliability of the power semiconductor device, but also effectively reduce the device damage caused by voltage fluctuations and overcurrent, extend the service life of the device, reduce maintenance costs, and at the same time simplify thermal management and improve system efficiency.

[0073] From the above description, it can be seen that the above embodiments of the present application achieve the following technical effects:

[0074] 1. The present application reduces the power requirement of the conversion and drive unit through an auxiliary energy extraction unit, thereby reducing the difficulty of implementation and manufacturing cost; the second voltage provided by the auxiliary energy extraction unit is used as a supplement, which not only effectively utilizes the energy stored in the current limiting unit, but also reduces the dependence on the main power supply, and reduces the energy consumption of the system during peak power demand. The present application reduces the power requirement of the main conversion and drive unit, making the design and manufacture of the conversion and drive unit simpler, reducing costs, and effectively reducing device damage caused by voltage fluctuations and overcurrents, extending the service life of the device, and reducing maintenance costs. The provision of the current limiting unit and the voltage stabilizing unit further enhances the safety and voltage stability of the system, and effectively avoids damage to power semiconductor devices due to overcurrent and voltage fluctuations;

[0075] 2. After the conversion and drive unit fails, by setting up a second conversion unit and connecting the auxiliary energy acquisition unit's separate control drive unit, the auxiliary energy acquisition unit provides the necessary second voltage to drive the power semiconductor device, so that the system can still maintain operation or perform fault processing, which greatly improves the system reliability;

[0076] 3. The auxiliary energy extraction unit in this application can effectively recycle the electromagnetic energy stored in the current limiting unit, convert it into a second voltage, and use it to drive the power semiconductor device. This process avoids the waste caused by the conversion of energy into heat energy, reduces the release of heat, significantly improves the energy utilization efficiency of the system, and simplifies the thermal management of the system;

[0077] 4. The conversion unit in the present application can automatically detect the unit to switch the power supply. When the voltage stored in the auxiliary energy unit is sufficient to supply power to the conversion and drive unit, the auxiliary energy unit is switched to supply power to the conversion and drive unit, thereby reducing the power requirements of the main conversion and drive unit and reducing energy waste. When the first conversion unit fails, the device can still operate spontaneously without human intervention in a short period of time, thereby improving the reliability of the device.

[0078] The above description is only the preferred embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the principles of the present application shall be included in the protection scope of the present application.

Claims

1. A driving energy-taking system for a power semiconductor device, characterized in that: Electrically connected to the power semiconductor device module, the drive energy acquisition system includes: An energy storage unit, configured to provide a first voltage; a current limiting unit, electrically connected to the energy storage unit, for limiting the current of the power semiconductor device module and storing energy released from the energy storage unit; A voltage stabilizing unit, electrically connected to the energy storage unit, and used for stabilizing the voltage of the energy storage unit; an auxiliary energy taking unit, electrically connected to the current limiting unit and the voltage stabilizing unit, respectively, and configured to take energy from the current limiting unit and provide a second voltage; A conversion and driving unit is electrically connected to the energy storage unit and the auxiliary energy acquisition unit, respectively, and is used to convert the first voltage to drive the power semiconductor device in the power semiconductor device module when the first voltage is obtained, and to convert the second voltage to drive the power semiconductor device when the second voltage is obtained.

2. The drive energy taking system according to claim 1, characterized in that: The conversion and driving unit comprises: a driving unit, electrically connected to the power semiconductor device module, and configured to drive the power semiconductor device module; a first conversion unit, electrically connected to the energy storage unit and the driving unit, respectively, and configured to convert the first voltage into a third voltage so that the driving unit drives the power semiconductor device module; The second conversion unit is electrically connected to the auxiliary energy acquisition unit and the driving unit respectively, and is used to convert the second voltage into a fourth voltage so that the driving unit drives the power semiconductor device module.

3. The drive energy taking system according to claim 1 or 2, characterized in that: The auxiliary energy acquisition unit comprises: A first energy storage module, used to store energy for the auxiliary energy acquisition unit; A switch module, electrically connected to the first energy storage module, and used to connect or disconnect the auxiliary energy taking unit and the voltage stabilizing unit; The voltage stabilization control module is electrically connected to the first energy storage module and the switch module respectively, and is used to provide a first threshold voltage. When the second voltage is greater than or equal to the first threshold voltage, the first energy storage module stops charging and the switch module connects the first energy storage module and the voltage stabilization unit.

4. The drive energy extraction system according to claim 3, characterized in that: The voltage stabilizing control module includes a first voltage stabilizing diode and a first resistor, the switch module includes a first thyristor, and the first energy storage module includes a first capacitor and a first diode; The auxiliary energy acquisition unit further includes a first port, a second port, a third port and a fourth port; The first port is electrically connected to the current limiting unit, the first voltage stabilizing diode, the first diode and the first thyristor respectively; the second port is electrically connected to the voltage stabilizing unit, the first resistor, the first thyristor and the first capacitor respectively; the third port is electrically connected to the conversion and driving unit, the first diode and the first capacitor respectively; the fourth port is electrically connected to the conversion and driving unit, the first capacitor, the first thyristor and the first resistor respectively; The first voltage regulator diode is also electrically connected to the first resistor, the first thyristor and the first diode respectively; the first capacitor is also electrically connected to the first diode; the first thyristor is also electrically connected to the first resistor, the first voltage regulator diode and the first diode respectively.

5. The drive energy taking system according to claim 1 or 2, characterized in that: The voltage stabilizing unit includes a second capacitor and a second resistor, the second capacitor is electrically connected to the power semiconductor device module, the energy storage unit, the second resistor and the auxiliary energy extraction unit respectively, and the second resistor is also electrically connected to the current limiting unit and the energy storage unit respectively.

6. The drive energy extraction system according to claim 5, characterized in that: The energy storage unit includes a third capacitor, one end of the third capacitor is electrically connected to the conversion and driving unit, the current limiting unit and the second resistor respectively, and the other end of the third capacitor is electrically connected to the second capacitor and the power semiconductor device module respectively.

7. The drive energy taking system according to claim 1 or 2, characterized in that: The current limiting unit includes a first inductor, one end of which is electrically connected to the conversion and driving unit, the energy storage unit and the voltage stabilizing unit respectively, and the other end of which is electrically connected to the auxiliary energy extraction unit and the power semiconductor device module respectively.

8. The drive energy extraction system according to claim 2, characterized in that: The system further comprises a switching unit, the switching unit being electrically connected between the auxiliary energy taking unit and the conversion and driving unit and between the energy storage unit and the conversion and driving unit, and being used for: Connecting the energy storage unit to the first conversion unit, and disconnecting the conversion and drive unit from the auxiliary energy acquisition unit, so that the conversion and drive unit acquires the first voltage; The auxiliary energy acquisition unit is connected to the second conversion unit, and the connection between the conversion and driving unit and the energy storage unit is disconnected, so that the conversion and driving unit obtains the second voltage.

9. A method for driving and obtaining energy for a power semiconductor device, characterized in that: A drive energy acquisition system for a power semiconductor device according to any one of claims 1 to 8, wherein the drive energy acquisition system is electrically connected to a power semiconductor device module, and the drive energy acquisition method comprises: Controlling the energy storage unit in the drive energy acquisition system to provide a first voltage to supply energy to the conversion and drive unit in the drive energy acquisition system, and causing the current limiting module in the drive energy acquisition system to store a first energy, wherein the first energy is part of the energy released by the energy storage unit, and the auxiliary energy acquisition unit in the drive energy acquisition system obtains energy from the current limiting module; The auxiliary energy acquisition unit is controlled to provide a second voltage to supply energy to the conversion and driving unit, wherein the second energy in the auxiliary energy acquisition unit is released to the voltage stabilizing unit in the driving energy acquisition system, and the second energy is the remaining part of the first energy except the energy stored in the auxiliary energy acquisition unit.

10. The driving energy acquisition method according to claim 9, characterized in that: The conversion and driving unit includes: a driving unit electrically connected to the power semiconductor device module; a first conversion unit electrically connected to the energy storage unit and the driving unit respectively; a second conversion unit electrically connected to the auxiliary energy extraction unit and the driving unit respectively; The controlling the energy storage unit in the driving energy taking system to provide a first voltage to supply energy to the conversion and driving unit in the driving energy taking system comprises: controlling the energy storage unit to supply energy to the first conversion unit so that the first conversion unit converts the first voltage into a third voltage, thereby driving the power semiconductor device in the power semiconductor device module through the driving unit; The controlling the auxiliary energy acquisition unit to provide a second voltage to supply energy to the conversion and driving unit includes: when it is detected that the first conversion unit fails or the output voltage is lower than a preset value, controlling the auxiliary energy acquisition unit to supply energy to the second conversion unit so that the second conversion unit converts the second voltage into a fourth voltage, thereby driving the power semiconductor device through the driving unit.

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