Driving circuit of power semiconductor device and control method thereof

Abstract

The invention provides a driving circuit of a power semiconductor device and a control method thereof, the driving circuit at least comprises a first inductance commutation module, the two ends of the first inductance commutation module are used for being electrically connected with a cathode and a gate pole respectively, the first inductance commutation module comprises a commutation sub-module, a freewheeling sub-module and a directional sub-module, the current conversion sub-module is used for converting current of the power semiconductor device from a cathode to a gate pole, a first end of the current conversion sub-module, a first end of the freewheeling sub-module and the cathode are electrically connected, the freewheeling sub-module is used for freewheeling the current conversion sub-module, and a second end of the current conversion sub-module is electrically connected with a second end of the freewheeling sub-module. The third end of the freewheeling sub-module is electrically connected with the first end of the directional sub-module, the directional sub-module is used for controlling the current of the power semiconductor device to flow into the freewheeling sub-module from the gate pole, and the second end of the directional sub-module is electrically connected with the gate pole. The driving circuit solves the technical problem of how to improve the reliability of the power semiconductor device.

Description

Technical Field

[0001] The present application relates to the semiconductor field, and in particular, to a driving circuit of a power semiconductor device and a control method of the driving circuit of a power semiconductor device. Background Art

[0002] Power semiconductor devices are semiconductor components used to control and convert electrical energy. They are mainly used for electrical energy conversion and circuit control, and are a bridge between weak current control and strong current operation. They can handle large currents and high voltages, and realize functions such as power conversion, power amplification, power switching, line protection, inversion (DC to AC) and rectification (AC to DC). The drive circuit of the power semiconductor device is used to drive the power semiconductor device, which can improve the efficiency and reliability of the power semiconductor device and provide necessary protection. However, during the operation of the power semiconductor device, the power semiconductor device fails due to reverse breakdown, which affects the reliability of the power semiconductor device.

[0003] Therefore, there is an urgent need for a driving circuit for a power semiconductor device that can solve the above problems. Summary of the invention

[0004] The main purpose of the present application is to provide a driving circuit of a power semiconductor device and a control method of the driving circuit of a power semiconductor device, so as to at least solve the problem of how to improve the reliability of the power semiconductor device in the prior art.

[0005] According to one aspect of the present application, a drive circuit for a power semiconductor device is provided, the drive circuit comprising at least a first inductive commutation module, the power semiconductor device comprising a gate, a cathode and an anode, two ends of the first inductive commutation module being respectively used to be electrically connected to the cathode and the gate, the first inductive commutation module comprising a commutation submodule, a freewheeling submodule and a directional submodule, wherein the commutation submodule is used to commutate the current of the power semiconductor device from the cathode to the gate, the first end of the commutation submodule, the first end of the freewheeling submodule and the cathode are electrically connected, the freewheeling submodule is used to freewheel the commutation submodule, the second end of the commutation submodule is electrically connected to the second end of the freewheeling submodule, the third end of the freewheeling submodule is electrically connected to the first end of the directional submodule, the directional submodule is used to control the current of the power semiconductor device to flow from the gate into the freewheeling submodule, and the second end of the directional submodule is electrically connected to the gate.

[0006] Further, the commutation submodule includes a first commutation inductor, a first switching device and a power supply, the freewheeling submodule includes a second switching device and a third switching device, and the directional submodule includes a fourth switching device, wherein the first end of the first commutation inductor, the first end of the power supply, the second end of the third switching device and the cathode are electrically connected, the second end of the first commutation inductor, the first end of the first switching device and the first end of the second switching device are electrically connected, the second end of the first switching device is electrically connected to the second end of the power supply, the second end of the second switching device, the first end of the third switching device and the first end of the fourth switching device are electrically connected, and the second end of the fourth switching device is electrically connected to the gate.

[0007] Furthermore, the first inductive commutation module further includes a fifth switching device, a first end of the fifth switching device is electrically connected to a second end of the fourth switching device, and a second end of the fifth switching device is electrically connected to the gate.

[0008] Further, the first switching device, the third switching device and the fifth switching device are MOS tubes, the first end of the first switching device, the first end of the third switching device and the first end of the fifth switching device are sources of the MOS tubes, the second end of the first switching device, the second end of the third switching device and the second end of the fifth switching device are drains of the MOS tubes, the second switching device and the fourth switching device are diodes, the first end of the second switching device and the first end of the fourth switching device are cathodes of the diodes, and the second end of the second switching device and the second end of the fourth switching device are anodes of the diodes.

[0009] Furthermore, the driving circuit also includes: at least one second inductive commutation module, the circuit structure of the second inductive commutation module is the same as the circuit structure of the first inductive commutation module, and two ends of the second inductive commutation module are electrically connected to the cathode and the gate respectively.

[0010] Further, the drive circuit also includes: at least one third inductor commutation module, the three-inductor commutation module includes a second commutation inductor, a sixth switch device, a seventh switch device, an eighth switch device and a ninth switch device, the first end of the second commutation inductor, the first end of the eighth switch device and the cathode are electrically connected, the first end of the sixth switch device is electrically connected to the second end of the power supply, the second end of the second commutation inductor, the second end of the sixth switch device and the first end of the seventh switch device are electrically connected, the second end of the seventh switch device, the second end of the eighth switch device and the first end of the ninth switch device are electrically connected, and the second end of the ninth switch device is electrically connected to the gate.

[0011] Further, the sixth switching device and the eighth switching device are MOS tubes, the first end of the sixth switching device and the first end of the eighth switching device are drains of the MOS tubes, the second end of the sixth switching device and the second end of the eighth switching device are sources of the MOS tubes, the seventh switching device and the ninth switching device are diodes, the first end of the seventh switching device and the first end of the ninth switching device are cathodes of the diodes, and the second end of the seventh switching device and the second end of the ninth switching device are anodes of the diodes.

[0012] Furthermore, the driving circuit also includes a turn-on module and a turn-off maintaining module, wherein both ends of the turn-on module and both ends of the turn-off maintaining module are electrically connected to the gate and the cathode respectively, the turn-on module is used to turn on the power semiconductor device, and the turn-off maintaining module is used to maintain the power semiconductor device turned off.

[0013] Furthermore, the shutdown maintaining module includes an energy storage capacitor and a tenth switching device, the first end of the energy storage capacitor is electrically connected to the cathode, the second end of the energy storage capacitor is electrically connected to the first end of the tenth switching device, and the second end of the tenth switching device is electrically connected to the gate.

[0014] Further, the tenth switch device is a MOS tube, the first end of the tenth switch device is the source of the MOS tube, and the second end of the tenth switch device is the drain of the MOS tube.

[0015] According to another aspect of the present application, a control method for a drive circuit of a power semiconductor device is provided, wherein the commutation submodule comprises a first commutation inductor, a first switching device and a power supply, the freewheeling submodule comprises a second switching device and a third switching device, and the directional submodule comprises a fourth switching device, wherein the first end of the first commutation inductor, the first end of the power supply, the second end of the third switching device and the cathode are electrically connected, the second end of the first commutation inductor, the first end of the first switching device and the first end of the second switching device are electrically connected, the second end of the first switching device is electrically connected to the second end of the power supply, the second end of the second switching device, the first end of the third switching device and the fourth switch are electrically connected. The first end of the device is electrically connected, and the second end of the fourth switching device and the gate are electrically connected. The method includes: when the power semiconductor device starts to be turned on, controlling the first switching device and the third switching device to be turned off; when the power semiconductor device starts to be turned off, controlling the first switching device to be turned on to increase the current of the first commutation inductor, and when the current of the first commutation inductor is greater than the current of the anode, controlling the third switching device to be turned on and the first switching device to be turned off to reduce the current of the first commutation inductor, and then controlling the third switching device to be turned off to complete the shutdown of the power semiconductor device; when the power semiconductor device is completely turned off, controlling the third switching device to be turned on.

[0016] Further, the first inductive commutation module also includes a fifth switching device, a first end of the fifth switching device is electrically connected to the second end of the fourth switching device, and a second end of the fifth switching device is electrically connected to the gate. The method also includes: when the power semiconductor device starts to turn on, controlling the fifth switching device to turn off; when the power semiconductor device starts to turn off, controlling the third switching device to turn on the fifth switching device at the same time.

[0017] Further, the driving circuit further includes: at least one second inductor commutation module, the circuit structure of the second inductor commutation module is the same as the circuit structure of the first inductor commutation module, and the two ends of the second inductor commutation module are electrically connected to the cathode and the gate respectively. The method further includes: when the power semiconductor device starts to be turned on, controlling to turn off the first switch device and the third switch device in each of the second inductor commutation modules; when the power semiconductor device starts to be turned off, controlling to turn on the first switch device in each of the second inductor commutation modules to increase the power of each of the second inductor commutation modules. The current of the first commutation inductor, when the current of the first commutation inductor in each of the second inductor commutation modules is greater than the current of the anode, controls the third switching device in each of the second inductor commutation modules to be turned on and the first switching device in each of the second inductor commutation modules to reduce the current of the first commutation inductor in each of the second inductor commutation modules, and then controls the third switching device in each of the second inductor commutation modules to be turned off so that the power semiconductor device completes the shutdown; when the power semiconductor device is completely turned off, controls the third switching device in each of the second inductor commutation modules to be turned on.

[0018] Further, the drive circuit also includes: at least one third inductor commutation module, the three-inductor commutation module includes a second commutation inductor, a sixth switch device, a seventh switch device, an eighth switch device and a ninth switch device, the first end of the second commutation inductor, the first end of the eighth switch device and the cathode are electrically connected, the first end of the sixth switch device is electrically connected to the second end of the power supply, the second end of the second commutation inductor, the second end of the sixth switch device and the first end of the seventh switch device are electrically connected, the second end of the seventh switch device, the second end of the eighth switch device and the first end of the ninth switch device are electrically connected, and the second end of the ninth switch device is electrically connected to the cathode. The gate is electrically connected, and the method further includes: when the power semiconductor device starts to be turned on, controlling to turn off each of the sixth switching devices and the eighth switching device; when the power semiconductor device starts to be turned off, controlling to turn on each of the sixth switching devices to increase the current of the corresponding second commutation inductor, and when the current of the second commutation inductor is greater than the current of the anode, controlling to turn on the eighth switching device and turning off the sixth switching device to reduce the current of the second commutation inductor, and then controlling to turn off each of the eighth switching devices to complete the shutdown of the power semiconductor device; when the power semiconductor device is completely turned off, controlling to turn on each of the eighth switching devices.

[0019] By applying the technical solution of the present application, a driving circuit of a power semiconductor device is provided, the driving circuit at least includes a first inductive commutation module, the two ends of the first inductive commutation module are respectively used to be electrically connected to the cathode and the gate, the first inductive commutation module includes a commutation submodule, a freewheeling submodule and a directional submodule, the commutation submodule is used to commutate the current of the power semiconductor device from the cathode to the gate, the freewheeling submodule is used to freewheel the commutation submodule, and the directional submodule is used to control the current of the power semiconductor device from the gate to the freewheeling submodule. The freewheeling submodule in the first inductive commutation module in the driving circuit of the power semiconductor device can be used as a freewheeling circuit of the commutation submodule, the freewheeling submodule provides an additional release path for the current in the commutation submodule, thereby increasing the degree of freedom of the transfer current, avoiding the gate and cathode of the power semiconductor device in the recovery stage after the power semiconductor device is turned off due to the high turn-off voltage and reverse breakdown failure, thereby improving the reliability of the power semiconductor device, thereby solving the technical problem that the power semiconductor device is affected by the reverse breakdown failure of the power semiconductor device. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] The drawings constituting part of the present application are used to provide a further understanding of the present application. The illustrative embodiments and descriptions of the present application are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0021] Figure 1 A schematic diagram of a driving circuit of a power semiconductor device provided in an embodiment of the present application is shown;

[0022] Figure 2 A schematic diagram of another driving circuit of a power semiconductor device provided in an embodiment of the present application is shown;

[0023] Figure 3 A schematic diagram of a driving circuit of another power semiconductor device provided in an embodiment of the present application is shown;

[0024] Figure 4 A schematic diagram of a driving circuit of another power semiconductor device provided in an embodiment of the present application is shown;

[0025] Figure 5 A schematic diagram of another driving circuit of a power semiconductor device provided in an embodiment of the present application is shown;

[0026] Figure 6 A schematic diagram of a driving circuit of another power semiconductor device provided in an embodiment of the present application is shown;

[0027] Figure 7 A schematic diagram of a driving circuit of another power semiconductor device provided in an embodiment of the present application is shown;

[0028] Figure 8 A schematic diagram of another driving circuit of a power semiconductor device provided in an embodiment of the present application is shown;

[0029] Fig. 9 A schematic diagram of a driving circuit of another power semiconductor device provided in an embodiment of the present application is shown;

[0030] Fig.10 A schematic diagram of a driving circuit of another power semiconductor device provided in an embodiment of the present application is shown;

[0031] Fig.11 A schematic diagram of another driving circuit of a power semiconductor device provided in an embodiment of the present application is shown;

[0032] Fig.12 A schematic diagram of a driving circuit of a power semiconductor device provided in an embodiment of the present application is shown;

[0033] Fig.13 A schematic flow chart of a control method for a driving circuit of a power semiconductor device provided according to an embodiment of the present application is shown.

[0034] The above drawings include the following reference numerals:

[0035] 10. First inductor commutation module; 11. commutation submodule; 12. freewheeling submodule; 13. directional submodule; 101. first commutation inductor; 102. first switch device; 103. second switch device; 104. third switch device; 105. fourth switch device; 106. power supply; 107. fifth switch device; 20. power semiconductor device; G. gate; A. anode; K. cathode; 30. second inductor commutation module; 40. third inductor commutation module; 401. second commutation inductor; 402. sixth switch device; 403. seventh switch device; 404. eighth switch device; 405. ninth switch device; 406. eleventh switch device; 50. opening module; 60. shutdown maintenance module; 601. energy storage capacitor; 602. tenth switch device. DETAILED DESCRIPTION

[0036] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present application can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0037] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present application.

[0038] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequential order. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present application described here. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device comprising a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0039] As introduced in the background technology, in the prior art, power semiconductor devices fail due to reverse breakdown, which will affect the reliability of the power semiconductor devices. To solve the above problem, an embodiment of the present application provides a driving circuit of a power semiconductor device and a control method for the driving circuit of a power semiconductor device.

[0040] Figures 1 to 12 is a schematic diagram of a driving circuit of a power semiconductor device according to an embodiment of the present application. Figures 1 to 12 As shown, the driving circuit at least includes a first inductor commutation module 10, the power semiconductor device 20 includes a gate G, a cathode K and an anode A, the two ends of the first inductor commutation module 10 are respectively used to be electrically connected to the cathode K and the gate G, the first inductor commutation module 10 includes a commutation submodule 11, a freewheeling submodule 12 and a directional submodule 13, wherein the commutation submodule 11 is used to commutate the current of the power semiconductor device 20 from the cathode K to the gate G, and the first The first end of the freewheeling submodule 12 and the cathode K are electrically connected, the freewheeling submodule 12 is used for freewheeling the commutation submodule 11, the second end of the commutation submodule 11 is electrically connected to the second end of the freewheeling submodule 12, the third end of the freewheeling submodule 12 is electrically connected to the first end of the directional submodule 13, the directional submodule 13 is used to control the current of the power semiconductor device 20 to flow from the gate G into the freewheeling submodule 12, and the second end of the directional submodule 13 is electrically connected to the gate G.

[0041] Specifically, the working principle of the power semiconductor device is as follows: before commutation, the current of the power semiconductor device flows from the anode to the cathode, and the device is in the on state. During commutation, the current is directed to the gate through the action of the commutation submodule, thereby realizing commutation. This process can effectively solve the problem of insufficient commutation speed when large current is turned off. After commutation: the current flows to the gate, the device enters the off state, and the commutation process is completed at the same time. In practical applications, the above-mentioned commutation submodule may include an inductor element or a capacitor element to realize commutation by energy storage. The above-mentioned freewheeling submodule may include a freewheeling diode. The above-mentioned directional submodule may include a diode, which uses the unidirectional conduction characteristics of the diode to realize directional control of the current. The above-mentioned power semiconductor device of the present application can be a gate turn-off thyristor (GTO for short), a static gate turn-off thyristor (SGTO for short), a thyristor (Thyristor), a gate commutated thyristor (GCT for short), an integrated gate commutated thyristor (IGCT for short) and one of the hybrid power semiconductor devices.

[0042] The present embodiment provides a driving circuit of a power semiconductor device, the driving circuit at least includes a first inductive commutation module, the two ends of the first inductive commutation module are respectively used to be electrically connected to the cathode and the gate, the first inductive commutation module includes a commutation submodule, a freewheeling submodule and a directional submodule, the commutation submodule is used to commutate the current of the power semiconductor device from the cathode to the gate, the freewheeling submodule is used to freewheel the commutation submodule, and the directional submodule is used to control the current of the power semiconductor device from the gate to flow into the freewheeling submodule. The freewheeling submodule in the first inductive commutation module in the driving circuit of the power semiconductor device can be used as a freewheeling circuit of the commutation submodule, the freewheeling submodule provides an additional release path for the current in the commutation submodule, thereby increasing the degree of freedom of the transfer current, avoiding the gate and cathode of the power semiconductor device in the recovery stage after the power semiconductor device is turned off due to the high turn-off voltage and reverse breakdown failure, thereby improving the reliability of the power semiconductor device, thereby solving the technical problem that the power semiconductor device is affected by the reverse breakdown failure of the power semiconductor device.

[0043] In the specific implementation process, Figures 2 to 12As shown, the commutation submodule 11 includes a first commutation inductor 101, a first switch device 102 and a power source 106, the freewheeling submodule 12 includes a second switch device 103 and a third switch device 104, and the directional submodule 13 includes a fourth switch device 105, wherein the first end of the first commutation inductor 101, the first end of the power source 106, the second end of the third switch device 104 and the cathode are electrically connected, the second end of the first commutation inductor 101, the first end of the first switch device 102 and the first end of the second switch device 103 are electrically connected, the second end of the first switch device 102 is electrically connected to the second end of the power source 106, the second end of the second switch device 103, the first end of the third switch device 104 and the first end of the fourth switch device 105 are electrically connected, and the second end of the fourth switch device 105 is electrically connected to the gate. The above circuit configuration can further simplify the commutation submodule 11, the freewheeling submodule 12 and the directional submodule 13.

[0044] Specifically, the power supply can be a voltage source, the first end of the voltage source is a negative electrode, and the second end of the voltage source is a positive electrode. The first switching device, the second switching device, the third switching device and the fourth switching device can be mechanical switching devices, semiconductor switching devices or other types of switching devices. In practical applications, a sampling resistor can be set in series with the first commutation inductor, and the current flowing through the first commutation inductor is obtained by obtaining the voltage across the sampling resistor. However, this method will increase the impedance in the circuit and thus affect the stability of the circuit. In order to solve the above problem, in another specific embodiment, the current of the first commutation inductor can be detected by detecting the voltage across the third switching device or by setting a sampling resistor in series with the third switching device. In order to further achieve complete decoupling of the turn-on circuit of the power semiconductor device and the first inductor commutation module, such as Figure 3 As shown, in some specific embodiments of the present application, the first inductor inverter module 10 further includes a fifth switching device 107, a first end of the fifth switching device 107 is electrically connected to a second end of the fourth switching device, and a second end of the fifth switching device 107 is electrically connected to the gate.

[0045] Specifically, the fifth switch device may be a mechanical switch device, a semiconductor switch device or other types of switch devices. In practical applications, the fifth switch device may be used as a gate switch of the first inductive commutation module.

[0046] In some other specific embodiments, Figure 3As shown, the first switch device 102, the third switch device 104 and the fifth switch device 107 are MOS transistors, the first end of the first switch device 102, the first end of the third switch device 104 and the first end of the fifth switch device 107 are the sources of the MOS transistors, the second end of the first switch device 102, the second end of the third switch device 104 and the second end of the fifth switch device 107 are the drains of the MOS transistors, the second switch device 103 and the fourth switch device 105 are diodes, the first end of the second switch device 103 and the first end of the fourth switch device 105 are the cathodes of the diodes, and the second end of the second switch device 103 and the second end of the fourth switch device 105 are the anodes of the diodes. This arrangement can further save the cost of the drive circuit and reduce the control complexity of the drive circuit.

[0047] Specifically, the first commutation inductor, the first switching device, the power supply, the second switching device, the third switching device, the fourth switching device and the fifth switching device are for illustration only. In actual applications, the above devices may be composed of a plurality of discrete devices connected in series or in parallel.

[0048] In some embodiments, Figure 4 and Figure 5 As shown, the driving circuit further includes: at least one second inductor commutation module 30, the circuit structure of the second inductor commutation module 30 is the same as the circuit structure of the first inductor commutation module 10, and the two ends of the second inductor commutation module 30 are respectively electrically connected to the cathode K and the gate G. The driving circuit in this embodiment includes the first inductor commutation module 10 and at least one second inductor commutation module 30, which can further reduce the current capacity required by the switching device in the driving circuit, increase the charging speed of the commutation inductor, reduce the turn-off delay of the power semiconductor device 20, increase the energy tolerance of the commutation inductor, and provide fault redundancy between different second inductor commutation modules 30, thereby further improving the reliability of the driving circuit.

[0049] Specifically, the circuit structure of the second inductive commutation module is the same as that of the first inductive commutation module, that is, the second inductive commutation module also includes a commutation submodule, a freewheeling submodule and a directional submodule, and the connection method is the same as that of the first inductive commutation module.

[0050] In some other specific embodiments, Figure 6As shown, the driving circuit further includes: at least one third inductor commutation module 40, the third inductor commutation module 40 includes a second commutation inductor 401, a sixth switch device 402, a seventh switch device 403, an eighth switch device 404 and a ninth switch device 405, the first end of the second commutation inductor 401, the first end of the eighth switch device 404 and the cathode K are electrically connected, the first end of the sixth switch device 402 is electrically connected to the second end of the power supply, the second end of the second commutation inductor 401, the second end of the sixth switch device 402 and the first end of the seventh switch device 403 are electrically connected, the second end of the seventh switch device 403, the second end of the eighth switch device 404 and the first end of the ninth switch device 405 are electrically connected, and the second end of the ninth switch device 405 is electrically connected to the gate G. Figure 7 As shown, the three inductor commutation modules further include: an eleventh switch device 406, a first end of the eleventh switch device 406 is electrically connected to the second end of the ninth switch device 405, and a second end of the eleventh switch device 406 is electrically connected to the gate G. The drive circuit in this embodiment includes a first inductor commutation module 10 and at least one third inductor commutation module 40, which can further reduce the current capacity required by the switch device in the drive circuit, increase the charging speed of the commutation inductor, reduce the turn-off delay of the power semiconductor device 20, increase the energy tolerance of the commutation inductor, and provide fault redundancy between different third inductor commutation modules 40, thereby further improving the reliability of the drive circuit.

[0051] Specifically, compared with the first inductive commutation module, the third inductive commutation module lacks a power supply. Each third inductive commutation module is electrically connected to the power supply in the first inductive commutation module and shares the same power supply.

[0052] In another specific embodiment, Figure 6 and Figure 7 As shown, the sixth switch device 402 and the eighth switch device 404 are MOS transistors, the first end of the sixth switch device 402 and the first end of the eighth switch device 404 are drains of the MOS transistors, the second end of the sixth switch device 402 and the second end of the eighth switch device 404 are sources of the MOS transistors, the seventh switch device 403 and the ninth switch device 405 are diodes, the first end of the seventh switch device 403 and the first end of the ninth switch device 405 are cathodes of the diodes, and the second end of the seventh switch device 403 and the second end of the ninth switch device 405 are anodes of the diodes. This arrangement can further save the cost of the drive circuit and reduce the control complexity of the drive circuit.

[0053] Specifically, the second commutation inductor, the sixth switch device, the seventh switch device, the eighth switch device and the ninth switch device are for illustration only. In actual applications, the above devices may be composed of a plurality of discrete devices connected in series or in parallel.

[0054] like Figure 8 As shown, the driving circuit further includes an opening module 50 and a closing maintaining module 60, both ends of the opening module 50 and both ends of the closing maintaining module 60 are electrically connected to the gate G and the cathode K respectively, the opening module 50 is used to open the power semiconductor device 20, and the closing maintaining module 60 is used to maintain the closing of the power semiconductor device 20. The driving circuit can further realize the opening and closing maintenance of the power semiconductor device 20.

[0055] In some other specific embodiments, Figures 9 to 12 As shown, the shutdown maintaining module 60 includes an energy storage capacitor 601 and a tenth switch device 602, wherein a first end of the energy storage capacitor 601 is electrically connected to the cathode K, a second end of the energy storage capacitor 601 is electrically connected to a first end of the tenth switch device 602, and a second end of the tenth switch device 602 is electrically connected to the gate G. This arrangement can further save the cost of the drive circuit and reduce the control complexity of the drive circuit.

[0056] Specifically, the above-mentioned drive circuit is divided into the following types: the first type of drive circuit includes a first inductor commutation module and a shutdown maintenance module; the second type of drive circuit includes a first inductor commutation module, at least one second inductor commutation module and a shutdown maintenance module; the third type of drive circuit includes a first inductor commutation module, at least one third inductor commutation module and a shutdown maintenance module. In addition, in the above-mentioned drive circuit, the first inductor commutation module or the second inductor commutation module may include the above-mentioned fifth switch device, or may not include the above-mentioned fifth switch device. The third inductor commutation module may include the above-mentioned eleventh switch device, or may not include the above-mentioned eleventh switch device.

[0057] like Figures 9 to 12 As shown, the tenth switch device 602 is a MOS transistor, the first end of the tenth switch device 602 is the source of the MOS transistor, and the second end of the tenth switch device 602 is the drain of the MOS transistor. This arrangement can further save the cost of the drive circuit and reduce the control complexity of the drive circuit.

[0058] Specifically, the energy storage capacitor and the tenth switch device are for illustration only. In practical applications, the device may be composed of a plurality of discrete devices connected in series or in parallel.

[0059] The present application also provides a method for controlling a driving circuit of a power semiconductor device. Fig.13is a schematic diagram of a control method for a driving circuit of a power semiconductor device according to an embodiment of the present application. Fig.13 As shown, the method includes:

[0060] Step S701, when the power semiconductor device starts to be turned on, controlling to turn off the first switch device and the third switch device;

[0061] Step S702, when the power semiconductor device starts to turn off, control the first switch device to turn on to increase the current of the first commutation inductor, and when the current of the first commutation inductor is greater than the current of the anode, control the third switch device to turn on and turn off the first switch device to reduce the current of the first commutation inductor, and then control the third switch device to turn off so that the power semiconductor device completes the shutdown;

[0062] Step S703, when the power semiconductor device is turned off, controlling the third switch device to be turned on.

[0063] Specifically, Fig. 9 The control method of the driving circuit of the power semiconductor device shown is as follows: when the first switch device 102 is controlled to be turned on and the third switch device 104 is controlled to be disconnected, the current of the first commutation inductor 101 increases under the action of the power supply 106; when the first switch device 102 is controlled to be disconnected and the third switch device 104 is controlled to be turned on, the current of the first commutation inductor 101 decreases under the action of the voltage drop of the third switch device 104, the second switch device 103 and the line loss; by controlling the ratio of the on-time of the two sets of switches, the current of the first commutation inductor 101 can be accurately controlled. When the power semiconductor device 20 is turned on, by detecting the current of the anode A and controlling the ratio of the on-time of the two sets of switches, the current of the first commutation inductor 101 is continuously slightly larger than the anode current; when the power semiconductor device 20 is about to be turned off, the third switch device 104 and the first switch device 102 are immediately controlled to be disconnected, and the current of the anode A enters the cathode K through the gate G first inductor commutation module 10 to achieve hard shutdown.

[0064] This embodiment provides a control method for a driving circuit of a power semiconductor device, in which, when the power semiconductor device starts to turn on, the first switch device and the third switch device are controlled to be turned off; in the case where the power semiconductor device starts to turn off, the first switch device is controlled to be turned on to increase the current of the first commutation inductor, and when the current of the first commutation inductor is greater than the current of the anode, the third switch device is controlled to be turned on and the first switch device is turned off to reduce the current of the first commutation inductor, and then the third switch device is controlled to be turned off to complete the shutdown of the power semiconductor device; when the shutdown of the power semiconductor device is completed, the third switch device is controlled to be turned on. In this method, by using different control modes of the first switch device and the second switch device in different working stages of the power semiconductor device, the freewheeling submodule can be used as the freewheeling circuit of the commutation submodule, and the freewheeling submodule provides an additional release path for the current in the commutation submodule, thereby increasing the degree of freedom of the transfer current, avoiding the gate and cathode of the power semiconductor device in the recovery stage after the power semiconductor device is turned off. Failure due to reverse breakdown due to excessively high turn-off voltage, thereby improving the reliability of the power semiconductor device, and thus solving the technical problem that the reliability of the power semiconductor device is affected by reverse breakdown failure of the power semiconductor device.

[0065] As an optional solution, the first inductive commutation module further includes a fifth switch device, the first end of the fifth switch device is electrically connected to the second end of the fourth switch device, and the second end of the fifth switch device is electrically connected to the gate. The method further includes: step S704, when the power semiconductor device starts to turn on, controlling the fifth switch device to turn off; step S705, when the power semiconductor device starts to turn off, controlling the third switch device to turn on while controlling the fifth switch device to turn on. The method can further achieve complete decoupling of the turn-on circuit of the power semiconductor device from the first inductive commutation module.

[0066] Specifically, Fig.10The control method of the driving circuit of the power semiconductor device shown is as follows: when the power semiconductor device 20 is turned on, the first switch device 102, the third switch device 104 and the tenth switch device 602 are disconnected, and the anode current A flows directly from the cathode K. At this time, the opening circuit and the opening maintenance circuit in the driving circuit inject current into the gate G. Since the PN junction conduction voltage drop between the gate G and the cathode K is generally lower than the sum of the conduction voltage drops of the second switch device 103 and the fourth switch device 105, the injected current will not pass through the above two series diodes to charge the first commutation inductor 101. The fifth switch device 107 is used to ensure that the opening circuit, the opening maintenance circuit and the first inductor commutation module 10 are completely decoupled, and the fifth switch device 107 is also in an open circuit state when the power semiconductor device 20 is turned on. When the power semiconductor device 20 is about to be turned off, the first switching device 102 is controlled to be turned on, and the power supply 106 charges the first commutation inductor 101 to a current greater than the anode A of the power semiconductor device 20. Then, the third switching device 104 is controlled to be turned on and the first switching device 102 is controlled to be disconnected. The first commutation inductor 101 continues to flow through the third switching device 104 and the second switching device 103. Due to line loss, switch and diode voltage drop, the current of the first commutation inductor 101 decreases slightly, but is still greater than the current of the anode A. Then, the fifth switching device 107 is controlled to be turned on and the third switching device 104 is controlled to be disconnected. The continuous flow requirement of the first commutation inductor 101 causes the current of the anode A to pass through the gate G, the fifth switching device 107, the fourth switching device 105, the second switching device 103, and the like. and the first commutation inductor 101, then enters the cathode K to realize hard shutdown, and the power semiconductor device 20 completes shutdown; after the power semiconductor device 20 completes shutdown, the tenth switch device 602 is turned on, and the energy storage capacitor 601 maintains reliable shutdown of the power semiconductor device 20, and the residual current of the first commutation inductor 101 is injected into the energy storage capacitor 601 to increase its voltage. When it is detected that the voltage of the energy storage capacitor 601 reaches a certain threshold, the third switch device 104 is turned on, and the first commutation inductor 101 releases energy through the second switch device 103 and the third switch device 104 to prevent the energy storage capacitor 601 from over-voltage causing the gate cathode of the power semiconductor device 20 to reversely breakdown and fail; when the power semiconductor device 20 is about to be turned on, the tenth switch device 602 is controlled to open the circuit, and the opening and closing in the drive maintain the normal operation of the circuit.

[0067] In an optional solution, the driving circuit further includes: at least one second inductor commutation module, the circuit structure of the second inductor commutation module is the same as the circuit structure of the first inductor commutation module, and the two ends of the second inductor commutation module are electrically connected to the cathode and the gate, respectively. The method further includes: step S706, when the power semiconductor device starts to be turned on, controlling the first switch device and the third switch device in each of the second inductor commutation modules to be turned off; step S707, when the power semiconductor device starts to be turned off, controlling the first switch device in each of the second inductor commutation modules to be turned on to increase the power of each of the second inductor commutation modules In the step S708, when the current of the first commutation inductor in each of the second inductor commutation modules is greater than the current of the anode, the third switch device in each of the second inductor commutation modules is controlled to be turned on and the first switch device in each of the second inductor commutation modules is turned off to reduce the current of the first commutation inductor in each of the second inductor commutation modules, and then the third switch device in each of the second inductor commutation modules is controlled to be turned off so that the power semiconductor device is turned off completely; step S708, when the power semiconductor device is turned off completely, the third switch device in each of the second inductor commutation modules is controlled to be turned on. The above method can further reduce the current capacity required by the switch device in the drive circuit, increase the charging speed of the commutation inductor, reduce the turn-off delay of the power semiconductor device, increase the energy tolerance of the commutation inductor, and provide fault redundancy between different second inductor commutation modules, thereby further improving the reliability of the drive circuit.

[0068] Specifically, Figure 5 The control method of the driving circuit of the power semiconductor device shown is as follows:

[0069] In the first case, the corresponding switches (the first switch device 102 or the third switch device 104 with the same number) in the first inductor commutation module 10 and the second inductor commutation module 30 operate simultaneously.

[0070] The second method is that the first inductor commutation module 10 and the second inductor commutation module 30 simultaneously turn on the first switch device 102 to charge the first commutation inductor 101, and the sum of the currents on each first commutation inductor 101 is greater than the current of the anode A when it is turned off by controlling the on-time ratio of the third switch device 104 and the first switch device 102. The currents on each first commutation inductor 101 can be different, and the third switch device 104 is turned off in time and the fifth switch device 107 is turned on to achieve arbitrary commutation current that is continuous in the time domain.

[0071] The driving circuit further includes: at least one third inductor commutation module, the three-inductor commutation module includes a second commutation inductor, a sixth switch device, a seventh switch device, an eighth switch device and a ninth switch device, the first end of the second commutation inductor, the first end of the eighth switch device and the cathode are electrically connected, the first end of the sixth switch device is electrically connected to the second end of the power supply, the second end of the second commutation inductor, the second end of the sixth switch device and the first end of the seventh switch device are electrically connected, the second end of the seventh switch device, the second end of the eighth switch device and the first end of the ninth switch device are electrically connected, and the second end of the ninth switch device is electrically connected to the gate, and the method further includes The method comprises: step S709, when the power semiconductor device starts to be turned on, controlling to turn off each of the sixth switch devices and the eighth switch device; step S710, when the power semiconductor device starts to be turned off, controlling to turn on each of the sixth switch devices to increase the current of the corresponding second commutation inductor, and when the current of the second commutation inductor is greater than the current of the anode, controlling to turn on the eighth switch device and turning off the sixth switch device to reduce the current of the second commutation inductor, and then controlling to turn off each of the eighth switch devices to complete the shutdown of the power semiconductor device; step S711, when the shutdown of the power semiconductor device is completed, controlling to turn on each of the eighth switch devices. The above method can further reduce the current capacity required by the switch devices in the drive circuit, increase the charging speed of the commutation inductor, reduce the shutdown delay of the power semiconductor device, increase the energy tolerance of the commutation inductor, and provide fault redundancy between different third inductor commutation modules, thereby further improving the reliability of the drive circuit.

[0072] Specifically, Figure 7 The control method of the driving circuit of the power semiconductor device shown is as follows:

[0073] In the first type, the corresponding switches (the first switch device 102 and the sixth switch device 402 or the third switch device 104 and the eighth switch device 404) in the first inductor commutation module 10 and the third inductor commutation module 40 operate simultaneously.

[0074] The second type is that the first inductor commutation module 10 turns on the first switch device 102 to charge the first commutation inductor 101, and at the same time the third inductor commutation module 40 turns on the sixth switch device 402 to charge the second commutation inductor 401, and the sum of the currents on each second commutation inductor 401 is greater than the current of the anode A when turned off by controlling the on-time ratio of the eighth switch device 404 and the sixth switch device 402. The currents on each second commutation inductor 401 can be different, and the eighth switch device 404 is turned off in time division and the eleventh switch device 406 is turned on to achieve any commutation current that is continuous in the time domain.

[0075] From the above description, it can be seen that the above embodiments of the present application achieve the following technical effects:

[0076] 1) The driving circuit of the power semiconductor device of the present application comprises at least a first inductive commutation module, the two ends of the first inductive commutation module are respectively used to be electrically connected to the cathode and the gate, the first inductive commutation module comprises a commutation submodule, a freewheeling submodule and a directional submodule, the commutation submodule is used to commutate the current of the power semiconductor device from the cathode to the gate, the freewheeling submodule is used to freewheel the commutation submodule, and the directional submodule is used to control the current of the power semiconductor device from the gate to the freewheeling submodule. The freewheeling submodule in the first inductive commutation module in the driving circuit of the power semiconductor device can be used as a freewheeling circuit of the commutation submodule, and the freewheeling submodule provides an additional release path for the current in the commutation submodule, thereby increasing the degree of freedom of the transfer current, avoiding the gate and cathode of the power semiconductor device in the recovery stage after the power semiconductor device is turned off due to the high turn-off voltage and reverse breakdown failure, thereby improving the reliability of the power semiconductor device, and thus solving the technical problem that the power semiconductor device is affected by the reverse breakdown failure of the power semiconductor device.

[0077] 2) The control method of the driving circuit of the power semiconductor device of the present application, when the power semiconductor device starts to turn on, the first switch device and the third switch device are controlled to be turned off; when the power semiconductor device starts to turn off, the first switch device is controlled to be turned on to increase the current of the first commutation inductor, and when the current of the first commutation inductor is greater than the current of the anode, the third switch device is controlled to be turned on and the first switch device is turned off to reduce the current of the first commutation inductor, and then the third switch device is controlled to be turned off to complete the shutdown of the power semiconductor device; when the shutdown of the power semiconductor device is completed, the third switch device is controlled to be turned on. In this method, by using different control modes of the first switch device and the second switch device in different working stages of the power semiconductor device, the freewheeling submodule can be used as the freewheeling circuit of the commutation submodule, and the freewheeling submodule provides an additional release path for the current in the commutation submodule, thereby increasing the degree of freedom of the transfer current, avoiding the gate and cathode of the power semiconductor device in the recovery stage after the power semiconductor device is turned off. Failure due to reverse breakdown due to excessively high turn-off voltage, thereby improving the reliability of the power semiconductor device, and thus solving the technical problem that the reliability of the power semiconductor device is affected by reverse breakdown failure of the power semiconductor device.

[0078] The above description is only the preferred embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A driving circuit for a power semiconductor device, characterized in that: The drive circuit at least includes a first inductor commutation module, the power semiconductor device includes a gate, a cathode and an anode, two ends of the first inductor commutation module are respectively used to be electrically connected to the cathode and the gate, the first inductor commutation module includes a commutation submodule, a freewheeling submodule and a directional submodule, wherein: The commutation submodule is used to commutate the current of the power semiconductor device from the cathode to the gate, and the first end of the commutation submodule, the first end of the freewheeling submodule and the cathode are electrically connected. The freewheeling submodule is used for freewheeling the commutation submodule, the second end of the commutation submodule is electrically connected to the second end of the freewheeling submodule, and the third end of the freewheeling submodule is electrically connected to the first end of the directional submodule. The directional submodule is used to control the current of the power semiconductor device to flow from the gate into the freewheeling submodule, and the second end of the directional submodule is electrically connected to the gate.

2. The driving circuit of the power semiconductor device according to claim 1, characterized in that: The commutation submodule includes a first commutation inductor, a first switching device and a power supply, the freewheeling submodule includes a second switching device and a third switching device, and the directional submodule includes a fourth switching device, wherein the first end of the first commutation inductor, the first end of the power supply, the second end of the third switching device and the cathode are electrically connected, the second end of the first commutation inductor, the first end of the first switching device and the first end of the second switching device are electrically connected, the second end of the first switching device is electrically connected to the second end of the power supply, the second end of the second switching device, the first end of the third switching device and the first end of the fourth switching device are electrically connected, and the second end of the fourth switching device is electrically connected to the gate.

3. The driving circuit of the power semiconductor device according to claim 2, characterized in that: The first inductive commutation module further includes a fifth switching device, a first end of the fifth switching device is electrically connected to a second end of the fourth switching device, and a second end of the fifth switching device is electrically connected to the gate.

4. The driving circuit of the power semiconductor device according to claim 3, characterized in that: The first switch device, the third switch device and the fifth switch device are MOS tubes, the first end of the first switch device, the first end of the third switch device and the first end of the fifth switch device are sources of the MOS tubes, the second end of the first switch device, the second end of the third switch device and the second end of the fifth switch device are drains of the MOS tubes, the second switch device and the fourth switch device are diodes, the first end of the second switch device and the first end of the fourth switch device are cathodes of the diodes, and the second end of the second switch device and the second end of the fourth switch device are anodes of the diodes.

5. The driving circuit of the power semiconductor device according to claim 1, characterized in that: The driving circuit also includes: at least one second inductive commutation module, the circuit structure of the second inductive commutation module is the same as the circuit structure of the first inductive commutation module, and two ends of the second inductive commutation module are electrically connected to the cathode and the gate respectively.

6. The driving circuit of the power semiconductor device according to claim 2, characterized in that: The drive circuit also includes: at least one third inductor commutation module, the three-inductor commutation module includes a second commutation inductor, a sixth switch device, a seventh switch device, an eighth switch device and a ninth switch device, the first end of the second commutation inductor, the first end of the eighth switch device and the cathode are electrically connected, the first end of the sixth switch device is electrically connected to the second end of the power supply, the second end of the second commutation inductor, the second end of the sixth switch device and the first end of the seventh switch device are electrically connected, the second end of the seventh switch device, the second end of the eighth switch device and the first end of the ninth switch device are electrically connected, and the second end of the ninth switch device is electrically connected to the gate.

7. The driving circuit of the power semiconductor device according to claim 6, characterized in that: The sixth switching device and the eighth switching device are MOS tubes, the first end of the sixth switching device and the first end of the eighth switching device are drains of the MOS tubes, the second end of the sixth switching device and the second end of the eighth switching device are sources of the MOS tubes, the seventh switching device and the ninth switching device are diodes, the first end of the seventh switching device and the first end of the ninth switching device are cathodes of the diodes, and the second end of the seventh switching device and the second end of the ninth switching device are anodes of the diodes.

8. The driving circuit of a power semiconductor device according to claim 1, characterized in that: The driving circuit also includes an opening module and a closing maintaining module, wherein both ends of the opening module and both ends of the closing maintaining module are electrically connected to the gate and the cathode respectively, the opening module is used to open the power semiconductor device, and the closing maintaining module is used to maintain the power semiconductor device closed.

9. The driving circuit of the power semiconductor device according to claim 8, characterized in that: The shutdown maintaining module includes an energy storage capacitor and a tenth switching device, wherein the first end of the energy storage capacitor is electrically connected to the cathode, the second end of the energy storage capacitor is electrically connected to the first end of the tenth switching device, and the second end of the tenth switching device is electrically connected to the gate.

10. The driving circuit of the power semiconductor device according to claim 9, characterized in that: The tenth switch device is a MOS tube, the first end of the tenth switch device is the source of the MOS tube, and the second end of the tenth switch device is the drain of the MOS tube.

11. A method for controlling a driving circuit of a power semiconductor device, characterized in that: A drive circuit for a power semiconductor device according to any one of claims 1 to 10, wherein the commutation submodule comprises a first commutation inductor, a first switching device and a power supply, the freewheeling submodule comprises a second switching device and a third switching device, and the directional submodule comprises a fourth switching device, wherein the first end of the first commutation inductor, the first end of the power supply, the second end of the third switching device and the cathode are electrically connected, the second end of the first commutation inductor, the first end of the first switching device and the first end of the second switching device are electrically connected, the second end of the first switching device is electrically connected to the second end of the power supply, the second end of the second switching device, the first end of the third switching device and the first end of the fourth switching device are electrically connected, and the second end of the fourth switching device is electrically connected to the gate, and the method comprises: When the power semiconductor device starts to be turned on, controlling to turn off the first switching device and the third switching device; When the power semiconductor device starts to turn off, the first switching device is controlled to be turned on to increase the current of the first commutation inductor, and when the current of the first commutation inductor is greater than the current of the anode, the third switching device is controlled to be turned on and the first switching device is turned off to reduce the current of the first commutation inductor, and then the third switching device is controlled to be turned off to complete the shutdown of the power semiconductor device; When the power semiconductor device is completely turned off, the third switching device is controlled to be turned on.

12. The control method of the driving circuit of the power semiconductor device according to claim 11, characterized in that: The first inductive commutation module further includes a fifth switch device, a first end of the fifth switch device is electrically connected to a second end of the fourth switch device, and a second end of the fifth switch device is electrically connected to the gate electrode, and the method further includes: When the power semiconductor device starts to conduct, controlling to turn off the fifth switch device; When the power semiconductor device starts to be turned off, the third switching device is controlled to be turned off and the fifth switching device is controlled to be turned on.

13. The control method of the driving circuit of the power semiconductor device according to claim 11, characterized in that: The driving circuit further includes: at least one second inductor commutation module, the circuit structure of the second inductor commutation module is the same as the circuit structure of the first inductor commutation module, and two ends of the second inductor commutation module are electrically connected to the cathode and the gate, respectively. The method further includes: When the power semiconductor device starts to be turned on, controlling to turn off the first switch device and the third switch device in each of the second inductive commutation modules; When the power semiconductor device starts to shut down, the first switch device in each of the second inductor commutation modules is controlled to be turned on to increase the current of the first commutation inductor in each of the second inductor commutation modules; when the current of the first commutation inductor in each of the second inductor commutation modules is greater than the current of the anode, the third switch device in each of the second inductor commutation modules is controlled to be turned on and the first switch device in each of the second inductor commutation modules is turned off to reduce the current of the first commutation inductor in each of the second inductor commutation modules; and then the third switch device in each of the second inductor commutation modules is controlled to be turned off to complete the shutdown of the power semiconductor device; When the power semiconductor device is completely turned off, the third switch device in each of the second inductor commutation modules is controlled to be turned on.

14. The control method of the driving circuit of the power semiconductor device according to claim 11, characterized in that: The drive circuit further includes: at least one third inductor commutation module, the three-inductor commutation module includes a second commutation inductor, a sixth switch device, a seventh switch device, an eighth switch device and a ninth switch device, a first end of the second commutation inductor, a first end of the eighth switch device and the cathode are electrically connected, a first end of the sixth switch device is electrically connected to a second end of the power supply, a second end of the second commutation inductor, a second end of the sixth switch device and a first end of the seventh switch device are electrically connected, a second end of the seventh switch device, a second end of the eighth switch device and a first end of the ninth switch device are electrically connected, and a second end of the ninth switch device is electrically connected to the gate, and the method further includes: When the power semiconductor device starts to be turned on, controlling to turn off each of the sixth switching device and the eighth switching device; When the power semiconductor device starts to turn off, each of the sixth switching devices is controlled to be turned on to increase the current of the corresponding second commutation inductor; when the current of the second commutation inductor is greater than the current of the anode, the eighth switching device is controlled to be turned on and the sixth switching device is turned off to reduce the current of the second commutation inductor, and then each of the eighth switching devices is controlled to be turned off to complete the shutdown of the power semiconductor device; When the power semiconductor device is completely turned off, each of the eighth switching devices is controlled to be turned on.

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