A heating component for semiconductor heat treatment

Abstract

The present application discloses a semiconductor heat treatment heating assembly, comprising a cover plate, a bottom plate and a heating mechanism, wherein the heating mechanism is arranged between the cover plate and the bottom plate, and comprises first to third mica sheets; the third mica sheet is arranged between the first and second mica sheets, and comprises a first inner mica sheet and a first outer mica sheet; the inner peripheral edge of the first outer mica sheet is clamped and combined with the outer peripheral edge of the first inner mica sheet; the first inner mica sheet and the first outer mica sheet are both staggered with resistance wires, and the distribution density of the resistance wires on the surfaces of the first inner mica sheet and the first outer mica sheet is the same. The design of the present application can make the semiconductor heat treatment heating assembly generate heat more evenly and effectively extend its service life.

Description

Technical Field

[0001] The present application relates to the field of semiconductor processing, and in particular to a heating component for semiconductor heat treatment. Background Art

[0002] In the current semiconductor manufacturing process, heat treatment is involved in many processes such as oxidation, passivation, and etching, so heating devices are indispensable in most semiconductor processing equipment. Among them, the most widely used heating device for semiconductor processing is to use the metal resistance characteristics to achieve electrical heating.

[0003] Generally speaking, for heating devices for semiconductor processing based on resistance heating, their working efficiency is directly related to the winding method and structure of the resistance wire. The resistance wire structure includes flat metal strips, cylindrical metal wires and metal hollow tubes, etc. Common winding methods of metal resistance materials include spiral, parallel arrangement, ring or concentric circle, etc. These methods each have different advantages, but in actual applications, due to the characteristics of the winding structure, the heating device, especially the planar heating device, will heat unevenly, which will not only affect the heat treatment of the semiconductor, but also make the heating device itself easy to damage. Summary of the invention

[0004] The main purpose of the present application is to provide a heating component for semiconductor thermal treatment to solve the problems existing in the prior art.

[0005] To achieve the above objectives, this application provides the following technical solutions.

[0006] Some embodiments of the present application provide a heating component for semiconductor heat treatment, which includes a cover plate, a base plate and a heating mechanism; the heating mechanism is arranged between the cover plate and the base plate, and includes a first mica sheet, a second mica sheet and a third mica sheet; the third mica sheet includes a first inner mica sheet and a first outer mica sheet; the first outer mica sheet is arranged around the first inner mica sheet, and the inner peripheral edge of the first outer mica sheet is snap-connected with the outer peripheral edge of the first inner mica sheet; the first inner mica sheet and the first outer mica sheet are both staggered with resistance wires, and the distribution density of the resistance wires on the surfaces of the first inner mica sheet and the first outer mica sheet is the same.

[0007] In the above embodiments of the present application, by setting the third mica sheet, i.e., the mica sheet carrying the resistance wire, as a first inner mica sheet and a first outer mica sheet that can be split along the radial direction, winding the resistance wire on the first inner mica sheet and the first outer mica sheet respectively, and making the distribution density of the resistance wire on the first inner mica sheet and the first outer mica sheet the same, when the heating component is working normally, the heat obtained per unit area by the first inner mica sheet and the first outer mica sheet in the same period is the same or basically consistent, so as to effectively ensure the uniform distribution of heat on the heating surface of the entire heating component, achieve the effect of uniform heating, and at the same time reduce the risk of the third mica sheet cracking under the action of internal stress due to uneven heating.

[0008] In one embodiment, the bending points of the resistance wire distributed on the outer side of the first inner mica sheet and the bending points of the resistance wire distributed on the outer side of the first outer mica sheet are arranged staggeredly, so as to further make the temperature distribution of the heating mechanism more uniform and improve the service life of the third mica sheet.

[0009] In one embodiment, the bending point of the resistance wire wound on the radial inner side of the first outer mica sheet penetrates the first inner mica sheet, and the resistance wire is wound on the radial outer side of the first outer mica sheet to form an extension section. Such a setting can increase the winding amount of the resistance wire on the radial outer side of the circular first outer mica sheet, thereby increasing the temperature of the outer ring of the circular first outer mica sheet and making the temperature of the whole of the first inner mica sheet and the circular first outer mica sheet more uniform.

[0010] In one embodiment, both the first inner mica sheet and the first outer mica sheet are circular rings.

[0011] In one embodiment, the inner peripheral edge of the first outer mica sheet is in close contact with the outer peripheral edge of the first inner mica sheet to ensure their heat conduction connection and obtain a more uniform heating effect.

[0012] In one embodiment, a breather pipe and an inner sleeve are provided on the cover plate. Among them, a driving mechanism for driving the semiconductor carrier to rotate is installed inside the inner sleeve. A first through hole matching the breather pipe and a second through hole matching the inner sleeve are opened on the bottom plate.

[0013] In one embodiment, a plurality of anti-collision pieces are symmetrically arranged along the circumferential direction on the outer peripheral edge of the cover plate.

[0014] In one embodiment, a plurality of fixing columns for connecting with the bottom plate are provided on the cover plate.

[0015] In one embodiment, a temperature control switch and a temperature monitoring device are connected to the bottom of the bottom plate, and the temperature monitoring device is used to monitor the temperature in the working space where the heating component is located.

[0016] In one embodiment, two sets of ceramic sheaths are provided at the bottom of the base plate, and metal sleeves are movably installed inside the two sets of ceramic sheaths through the setting of limiting steps. A high-temperature resistant protective sleeve is sleeved on the metal sleeve. The high-temperature resistant protective sleeve is arranged between the metal sleeve and the ceramic sheath, and an outer convex ring for engaging the limiting step is provided on the outer part of the metal sleeve. The high-temperature resistant protective sleeve can be made of materials such as carbon fiber composite materials. By providing the high-temperature resistant protective sleeve, it can not only resist high temperatures but also prevent the metal sleeve and the ceramic sheath from rubbing against each other, thereby extending the service life of the components.

[0017] In one embodiment, both ends of the resistance wire respectively penetrate and extend into the interiors of the two metal sleeves, output power lines and input power lines are respectively arranged inside the two metal sleeves, and a conductive core is arranged inside the power line. The conductive core, the resistance wire, and the metal sleeve are fixed by a resistance welding process.

[0018] Some embodiments of the present invention provide a heating assembly for semiconductor heat treatment, which includes a cover plate, a base plate, and a heating mechanism; the heating mechanism is arranged between the cover plate and the base plate and includes a first mica sheet, a second mica sheet, and a third mica sheet; the third mica sheet includes a first inner mica sheet, a second inner mica sheet, and a second outer mica sheet. The inner peripheral portion and the outer peripheral portion of the second inner mica sheet are respectively clamped and combined with the outer peripheral portion of the first inner mica sheet and the inner peripheral portion of the second outer mica sheet. Resistance wires are alternately wound on both the first inner mica sheet and the second inner mica sheet, and the distribution density of the resistance wires on the surfaces of the first inner mica sheet and the second inner mica sheet is the same. A plurality of resistance wire spiral winding structures are evenly distributed on the second outer mica sheet, and the resistance wire spiral winding structure is formed by winding the resistance wire.

[0019] In the above embodiments of the present application, by alternately winding resistance wires with a uniform density distribution outside the first inner mica sheet and the second inner mica sheet, and evenly distributing a plurality of resistance wire spiral winding structures on the second outer mica sheet, the overall temperature distribution of the third mica sheet is made more uniform. The resistance wire spiral winding structure can make up for the problem of insufficient temperature at the outer peripheral portion of the second inner mica. Moreover, the resistance wire spiral winding structure is wound around the outside of the air permeable pipe, and the air permeable pipe can be heated by using the resistance wire spiral winding structure, so as to preheat the gas flowing through the air permeable pipe, avoid the semiconductor from deforming or being damaged when contacting the semiconductor due to too low gas temperature, and the preheated gas can better transfer heat to the semiconductor.

[0020] In one embodiment, when the heating mechanism is operating normally, the heat generated per unit area by the heating wires on the first inner mica sheet, the second inner mica sheet, and the second outer mica sheet is the same. In this way, the overall temperature distribution of the heating mechanism can be made uniform, and then the heat transferred by the heating mechanism can be evenly transferred to the semiconductor. The semiconductor being evenly heated can eliminate internal stress and improve the quality of the product.

[0021] In one embodiment, the inner peripheral portion of the second inner mica sheet is closely attached to the outer peripheral portion of the first inner mica sheet, and the inner peripheral portion of the second outer mica sheet is closely attached to the outer peripheral portion of the second inner mica sheet. In this way, the risk of breakage of the first inner mica sheet, the second inner mica sheet, and the second outer mica sheet can be reduced. If the third mica sheet composed of the first inner mica sheet, the second inner mica sheet, and the second outer mica sheet is made of a whole mica sheet, when the third mica sheet receives the heat conduction of the heating wire, internal stress may occur due to uneven heating, and the internal stress is likely to cause the mica sheet material to break and affect the heat conduction efficiency.

[0022] In one embodiment, the bending points of the heating wires distributed on the outside of the first inner mica sheet and the bending points of the heating wires distributed on the outside of the second inner mica sheet are arranged in a staggered manner. In this way, the temperature of the inner peripheral portion and the outer peripheral portion of the first inner mica can be made consistent. When the heating wires are wound around the first inner mica sheet in an alternating manner, since the heating wires are densely distributed on the inner peripheral portion of the first inner mica sheet and sparsely distributed on the outer peripheral portion of the first inner mica sheet, the temperature of the inner edge of the first inner mica sheet is higher than that of the outer edge. Furthermore, by arranging the bending points of the heating wires distributed on the outside of the first inner mica sheet and the bending points of the heating wires distributed on the outside of the second inner mica sheet in a staggered manner, the relatively high temperature of the inner peripheral portion of the second inner mica sheet can make up for the insufficient temperature of the outer peripheral portion of the first inner mica sheet, and the problem of insufficient temperature of the outer peripheral portion of the second inner mica sheet is made up by the provided spiral winding structure of the heating wire, and the spiral winding structure of the heating wire can preheat the air-permeable pipe.

[0023] In one embodiment, the first inner mica sheet is circular ring-shaped, the second inner mica sheet is ring-shaped, and a plurality of isosceles trapezoidal extension portions are evenly distributed along the circumferential direction on the outer peripheral portion. The isosceles trapezoidal extension portions extend radially outward and are snap-fitted with a plurality of isosceles trapezoidal grooves provided on the inner peripheral portion of the second outer mica sheet.

[0024] In one embodiment, an air-permeable pipe and an inner sleeve are provided on the cover plate, and the air-permeable pipes are in multiple groups and are evenly distributed. Among them, a driving mechanism for driving the semiconductor carrier to rotate is installed inside the inner sleeve. A first through hole matching the air-permeable pipe and a second through hole matching the inner sleeve are opened on the bottom plate.

[0025] In one embodiment, a plurality of anti-collision pieces are symmetrically arranged along the circumferential direction on the outer peripheral edge of the cover plate.

[0026] In one embodiment, a plurality of fixing columns for connecting with the bottom plate are arranged on the cover plate.

[0027] In one embodiment, a temperature control switch and a temperature monitoring device are connected to the bottom of the bottom plate, and the temperature monitoring device is used to monitor the heating temperature of the heating component.

[0028] In one embodiment, the ventilation pipe axially penetrates through the second outer mica sheet, the resistance wire is spirally wound outside a plurality of groups of ventilation pipes, and spiral grooves for fitting the resistance wire are arranged outside each group of ventilation pipes.

[0029] In one embodiment, two groups of ceramic sheaths are arranged at the bottom of the bottom plate, and metal sleeves are movably installed inside the two groups of ceramic sheaths by arranging limiting steps. A high-temperature resistant protective sleeve is sleeved on the metal sleeve. The high-temperature resistant protective sleeve is arranged between the metal sleeve and the ceramic sheath, and an outer convex ring for engaging with the limiting step is arranged outside the metal sleeve. Two ends of the resistance wire respectively penetrate and extend into the interiors of the two groups of metal sleeves, output power lines and input power lines are respectively arranged inside the two groups of metal sleeves, and the conductive cores inside the power lines are fixedly combined with the resistance wire and the metal sleeve through a pressure welding process.

[0030] Compared with the prior art, the heating component for semiconductor heat treatment provided by the present application can achieve a more uniform heating effect, thereby improving the semiconductor processing quality, and has better working stability and longer service life. Description of the Drawings

[0031] Figure 1 It is a schematic diagram of the overall structure of a heating component in the first embodiment of the present application;

[0032] Figure 2 It is a schematic diagram of the distribution of a bottom plate, a temperature control switch, a thermal resistor and a ceramic sheath in the first embodiment of the present application;

[0033] Figure 3 It is a schematic diagram of the installation of a cover plate, a ventilation pipe, an inner sleeve, an anti-collision piece and a fixing column in the first embodiment of the present application;

[0034] Figure 4 It is an exploded view of a heating mechanism in the first embodiment of the present application;

[0035] Figure 5 It is a schematic diagram of the distribution of a first mica sheet and a power line in the first embodiment of the present application;

[0036] Figure 6Schematic diagram of the winding structure of a first inner mica sheet, a first outer mica sheet and a resistance wire in Embodiment 1 of the present application;

[0037] Figure 7 Top view of the installation of a first inner mica sheet and a first outer mica sheet in Embodiment 1 of the present application;

[0038] Figure 8 For Figure 5 Enlarged view of part A in

[0039] Figure 9 Schematic diagram of the installation of a power cord, a ceramic sheath and a bottom plate in Embodiment 1 of the present application;

[0040] Figure 10 For Figure 9 Enlarged view of part B in

[0041] Figure 11 Schematic diagram of the installation of a first inner mica sheet, a first outer mica sheet and a resistance wire in Embodiment 2 of the present application;

[0042] Figure 12 Schematic diagram of the distribution of the resistance wire on both sides of the first inner mica sheet and the first outer mica sheet in Embodiment 2 of the present application;

[0043] Figure 13 Schematic diagram of the overall structure of a heating component in Embodiment 3 of the present application;

[0044] Figure 14 Schematic diagram of the installation of a cover plate, multiple groups of air vent pipes and an inner sleeve in Embodiment 3 of the present application;

[0045] Figure 15 Schematic diagram of the installation of a bottom plate, a convex platform and a fixing column in Embodiment 3 of the present application;

[0046] Figure 16 Exploded view of a heating component in Embodiment 3 of the present application;

[0047] Figure 17 Schematic diagram of the distribution of a second mica sheet and a second limiting ring in Embodiment 3 of the present application;

[0048] Figure 18 Schematic diagram of the distribution of a first mica sheet and a first limiting ring in Embodiment 3 of the present application;

[0049] Figure 19 Schematic diagram of the distribution of a cover plate, a first inner mica sheet, a second inner mica sheet, a second outer mica sheet and a resistance wire in Embodiment 3 of the present application;

[0050] Figure 20 Schematic diagram of the distribution of a first inner mica sheet, a second inner mica sheet, a second outer mica sheet and a resistance wire in Embodiment 3 of the present application;

[0051] Figure 21 It is a schematic diagram of the distribution of heating wires in the third embodiment of the present application;

[0052] Figure 22 It is a schematic diagram of the distribution of temperature test points V1, V2, V3, V4, V5, and V6 in the first embodiment of the present application;

[0053] Figure 23 It is a temperature curve graph of thermal uniformity at different positions in the first embodiment of the present application.

[0054] Explanation of reference numerals: 1, cover plate; 2, vent pipe; 3, inner sleeve; 4, anti-collision piece; 5, fixing column; 6, bottom plate; 7, first through hole; 8, second through hole; 9, temperature control switch; 10, thermal resistor; 11, ceramic sheath; 12, power cord; 13, conductive core; 14, heating mechanism; 1401, first mica sheet; 1402, second mica sheet; 1403, first inner mica sheet; 1404, first outer mica sheet; 1405, heating wire; 1406, first limiting ring; 1407, second limiting ring; 1408, second inner mica sheet; 1409, second outer mica sheet; 15, metal sleeve; 16, outer convex ring; 17, high-temperature protection sleeve; 18, limiting step; 19, fixing hole; 20, long bolt; 21, first limiting ring; 22, second limiting ring; 23, convex platform; 24, extension section. Detailed implementation manners

[0055] In the prior art, the heating device applied to the semiconductor heat treatment process usually uses a mica sheet with a heating wire wound on its surface as the main heating element. However, for a large-diameter mica sheet, there are many potential hazards in winding the heating wire on it to form a heating mechanism. Taking a circular mica sheet with a large diameter and a small inner diameter as an example, the heating wires are more densely distributed in the area close to the inner ring of the mica sheet, while the heating wires are more sparsely distributed in the area close to the outer periphery of the mica sheet. Therefore, when the heating element works, the heat per unit area in the area close to the inner ring of the mica sheet is often significantly higher than the heat per unit area in the area close to the outer periphery of the mica sheet, resulting in a large difference in the heating rate and temperature on the heating surface of the heating element, and further causing uneven heating of the semiconductor as the heating object, thereby causing problems such as deformation and breakage. At the same time, since the mica sheet is a whole structure, the temperature difference between its inner ring area and outer periphery area is large, which will cause large internal stress in it, and then make it easy to break, seriously shortening its service life.

[0056] In view of the above-mentioned defects in the prior art, the applicant has proposed the technical solution of the present application after long-term research and practice. The technical solution of the present application will be clearly and completely described below in combination with several embodiments and drawings. The embodiments described below with reference to the drawings are exemplary and are only used to explain the present application, and cannot be understood as limiting the present application.

[0057] The following describes the embodiments of the present application based on its overall structure.

[0058] Embodiment 1:

[0059] See also Figure 1 - Figure 10 A heating assembly for semiconductor heat treatment provided in this embodiment includes a cover plate 1, a bottom plate 6 and a heating mechanism 14, and the heating mechanism 14 is arranged in a space mainly enclosed by the cover plate 1 and the bottom plate 6. The cover plate 1 and the bottom plate 6 can be made of metal materials. The heating mechanism 14 includes a first mica sheet 1401, a second mica sheet 1402 and a third mica sheet. The third mica sheet includes a first inner mica sheet 1403 and a first outer mica sheet 1404, and the first inner mica sheet and the first outer mica sheet can both be annular. The second mica sheet 1402 and the first mica sheet 1401 can play the role of insulation and heat conduction. The outer peripheral edge of the first inner mica sheet 1403 is provided with a plurality of clamping blocks along the circumferential direction, and the inner peripheral edge of the first outer mica sheet 1404 is provided with a plurality of clamping slots along the circumferential direction. By making each clamping block tightly engage with a corresponding clamping slot, the first inner mica sheet 1403 and the first outer mica sheet 1404 can be tightly combined in the radial direction, which can ensure the stable installation of the first inner mica sheet 1403 and the first outer mica sheet 1404 on the one hand, and can reduce the internal stress of the third mica sheet when heated on the other hand, and prevent the third mica sheet from being damaged due to different internal stress caused by uneven temperature distribution when the whole mica sheet is used to make the third mica sheet. At the same time, the first inner mica sheet 1403 and the first outer mica sheet 1404 are both interlaced with resistance wires 1405, and the distribution density of the resistance wires 1405 on the surfaces of the first inner mica sheet 1403 and the first outer mica sheet 1404 is the same. By winding the resistance wire 1405 on the first inner mica sheet 1403 and the first outer mica sheet 1404 respectively to form a heating mica layer for generating heat, the resistance wire 1405 can be more evenly distributed on the third mica sheet, thereby reducing or avoiding the problem of large difference in distribution density of the resistance wire 1405 in the inner ring area and the outer peripheral area of ​​the third mica sheet, thereby ensuring uniform heat distribution on the heating surface of the entire heating component and achieving a uniform heating effect. At the same time, it can also reduce the risk of the third mica sheet cracking due to internal stress due to uneven heating in different radial areas.

[0060] Furthermore, the bending points of the resistance wire 1405 distributed on the outer side of the first inner mica sheet 1403 and the bending points of the resistance wire 1405 distributed on the outer side of the first outer mica sheet 1404 are arranged in a staggered manner. By setting the first inner mica sheet 1403 and the first outer mica sheet 1404 to be snap-connected, and then using the resistance wire 1405 to wind them both in an interleaved manner, when winding, the bending point of the resistance wire 1405 at the radially outer edge of the first inner mica sheet 1403 and the bending point of the resistance wire 1405 at the radially inner edge of the first outer mica sheet 1404 are also arranged in a staggered manner. This can not only make the overall temperature distribution of the heating mechanism 14 more uniform, but also eliminate the internal stress of the third mica sheet by making the temperature distribution more uniform, effectively extending the service life of the third mica sheet.

[0061] Please refer to Figure 2 and Figure 3 As shown in FIGS. and, the top surface of the cover plate 1 is the heating working surface, and the bottom surface is provided with a vent pipe 2 and an inner sleeve 3. The inner sleeve 3 can be arranged at the center of the bottom surface of the cover plate 1, while the vent pipe 2 is arranged offset from the center of the bottom surface of the cover plate 1. The bottom surface of the cover plate 1 is arranged opposite to the top surface of the bottom plate 6. The bottom plate 6 is provided with a first through hole 7 and a second through hole 8. The first through hole 7 allows the vent pipe 2 to pass through, and the second through hole 8 allows the inner sleeve 3 to pass through. The vent pipe 2 and the inner sleeve 3 can be respectively formed by metal rings welded to the bottom surface of the cover plate 1.

[0062] Obviously, the cover plate 1 is also provided with through-hole structures respectively communicating with the vent pipe 2 and the inner sleeve 3, so that the air-introducing device connected to the vent pipe 2 can transport the gas that can participate in the heat treatment to the upper part of the heating component. For example, the air-introducing device transports nitrogen, argon, hydrogen or other working gases to the upper space of the heating component through the vent pipe 2. Using the working gas can not only quickly conduct heat to the wafer, but also provide isolation protection for the heat treatment of the wafer. A driving mechanism will be installed in the space where the bottom of the heating component is located. The output shaft of the driving mechanism passes through the inner sleeve to the upper part of the heating component. A carrier for placing the wafer carrier is installed at the top of the output shaft of the driving mechanism, so that the heating of the wafer is carried out above the heating component. The driving mechanism drives the wafer carrier to rotate, and fully contacts with the inert gas for heat conduction.

[0063] At the same time, a plurality of anti-collision pieces 4 are symmetrically arranged along the circumferential direction on the outer peripheral edge of the cover plate 1 to protect the heating component. In addition, a plurality of fixing columns 5 for connecting with the bottom plate 6 can be arranged on the bottom surface of the cover plate 1. The cover plate 1 and the bottom plate 6 can be quickly and simply assembled by screwing the screws into the fixing columns 5.

[0064] In addition, a temperature control switch 9 and a temperature monitoring device are provided on the bottom surface of the bottom plate 6. The temperature monitoring device can be a thermal resistor 10 or a temperature sensor, etc. The temperature control switch can be connected in series to the power supply circuit of the heating component for safety control to prevent problems such as overheating and overload. The temperature monitoring device can be connected to the control module of the heating component for real-time temperature measurement and control of the heating temperature change.

[0065] Please refer to Figure 2 , Figure 5 , Figures 8 - 10 , two groups of ceramic sheaths 11 can be provided on the bottom surface of the bottom plate 6, and a metal sleeve 15 is movably installed inside each of the two groups of ceramic sheaths 11 by setting a limiting step 18. A high-temperature resistant protective sleeve 17 is sleeved outside the metal sleeve 15. The high-temperature resistant protective sleeve 17 is used to prevent the metal sleeve 15 and the ceramic sheath 11 from rubbing against each other. An outer convex ring 16 for engaging with the limiting step 18 is provided outside the metal sleeve 15. By sleeving another layer of high-temperature resistant protective sleeve 17 outside the metal sleeve 15, such as a high-temperature resistant protective sleeve 17 made of carbon fiber composite material, it can not only resist high temperature but also prevent the metal sleeve 15 and the ceramic sheath 11 from rubbing against each other, thereby extending the service life of the components.

[0066] Please refer to Figures 8 - 10 , both ends of the resistance wire 1405 respectively penetrate and extend into the interiors of the two groups of metal sleeves 15, and output power lines 12 and input power lines 12 are respectively provided inside the two groups of metal sleeves 15. A conductive core 13 is provided inside the power line 12. The conductive core 13, the resistance wire 1405, and the metal sleeve 15 are fixed by a pressure welding process. By setting the metal sleeve 15 to perform pressure welding and fixing on the resistance wire 1405 and the conductive core 13, the connection between the resistance wire 1405 and the conductive core 13 is made more firm.

[0067] When the heating component of this embodiment is working, current is transmitted through the conductive core 13 of the power cord 12 to the resistance wire 1405 to form a circuit. When the current passes through the resistance wire 1405, the resistance wire 1405 converts electrical energy into heat energy. Thus, the temperatures of the first inner mica sheet 1403 and the first outer mica sheet 1404 begin to rise. The temperatures of the first inner mica sheet 1403 and the first outer mica sheet 1404 are transmitted to the first mica sheet 1401 and the second mica sheet 1402. The first mica sheet 1401 and the second mica sheet 1402 play an insulating role for the current while conducting heat. The first mica sheet 1401 is attached to the bottom plate 6. Furthermore, the heat of the first mica sheet 1401 is transmitted to the bottom plate 6. The second mica sheet 1402 is attached to the cover plate 1. Furthermore, the heat of the second mica sheet 1402 is transmitted to the cover plate 1. The temperature control switch 9 at the bottom of the bottom plate 6 is used to monitor the temperature of the bottom plate 6 to prevent the temperature of the bottom plate 6 from being too high and overloaded. When the temperature of the bottom plate 6 is too high, the temperature control switch 9 can cut off the power cord 12. The thermal resistor 10 can measure the temperature change in real time so as to facilitate the equipment control circuit to adjust the power to control the temperature change. Since the temperatures of the first inner mica sheet 1403 and the first outer mica sheet 1404 are respectively transmitted to the first mica sheet 1401 and the second mica sheet 1402, the temperatures of the cover plate 1 and the bottom plate 6 are nearly the same. By detecting and understanding the temperature of the bottom plate 6, the temperature of the cover plate 1 can be indirectly controlled. The cover plate 1 is used for a semiconductor, for example, heating a semiconductor wafer.

[0068] Embodiment Two:

[0069] Please refer to Figure 11 - Figure 12 The heating component for semiconductor heat treatment provided in this embodiment is basically the same as that in Embodiment One. Among them, the resistance wire 1405 is wound inside the first outer mica sheet 1404 in the radial direction, and the bending point penetrates through the first inner mica sheet 1403. And the resistance wire 1405 is wound outside the first outer mica sheet 1404 in the radial direction to form an extension section 24. By bending the resistance wire 1405 at the bending point inside the first outer mica sheet 1404 in the radial direction and penetrating it onto the first inner mica sheet 1403, the winding of the resistance wire 1405 can make the clamping connection between the first inner mica sheet 1403 and the first outer mica sheet 1404 more firm. And the resistance wire 1405 is wound outside the first outer mica sheet 1404 in the radial direction to form an extension section 24. The setting of the extension section 24 can increase the winding amount of the resistance wire 1405 outside the first outer mica sheet 1404 in the radial direction, thereby increasing the temperature of the outer ring of the first outer mica sheet 1404. When the temperature of the outer ring and the inner ring of the first outer mica sheet 1404 are also kept the same, the temperature distribution of the first outer mica sheet 1404 becomes more uniform, effectively extending the service life of the first outer mica sheet 1404 and making the overall temperature of the first inner mica sheet 1403 and the first outer mica sheet 1404 more uniform.

[0070] In this embodiment, by further optimizing the winding method of the resistance wire 1405, the resistance wire 1405 is wound in a staggered manner outside both the first inner mica sheet 1403 and the first outer mica sheet 1404, and the winding bending points are distributed in a staggered manner. When the resistance wire 1405 is wound outside the radial outer side of the first outer mica sheet 1404, an extension section 24 of a certain length can be wound. The arrangement of the extension section 24 can increase the winding amount of the resistance wire 1405, thereby compensating for the problem of insufficient temperature on the radial outer side of the first outer mica sheet 1404. Moreover, the winding bending point of the resistance wire 1405 on the radial inner side of the first outer mica sheet 1404 is transferred to the first inner mica sheet 1403, and a plurality of holes are formed in the first inner mica sheet 1403 for passing through and winding the resistance wire 1405. This enables the resistance wire 1405 to wind and bind the first inner mica sheet 1403 and the first outer mica sheet 1404 together, thereby improving the firmness of the snap connection between the first inner mica sheet 1403 and the first outer mica sheet 1404.

[0071] Embodiment Three:

[0072] Please refer to Figure 13 - Figure 21 A heating component for semiconductor heat treatment provided in this embodiment may have a basic structure similar to that of Embodiment One. The heating mechanism 14 also includes a first mica sheet 1401, a second mica sheet 1402, and a third mica sheet, and the third mica sheet is disposed between the first mica sheet 1401 and the second mica sheet 1402. Different from Embodiment One, the third mica sheet includes a first inner mica sheet 1403, a second inner mica sheet 1408, and a second outer mica sheet 1409. The first inner mica sheet 1403 is circular, and the outer peripheral edge portion of the first inner mica sheet 1403 and the inner peripheral edge portion of the second inner mica sheet 1408 may adopt a snap connection structure similar to the snap block / groove structure in Embodiment One. The second inner mica sheet 1408 is annular, and a plurality of isosceles trapezoidal extension portions are uniformly distributed along the circumferential direction on the outer peripheral edge portion. The isosceles trapezoidal extension portions extend radially outward and are snap-connected to a plurality of isosceles trapezoidal grooves provided on the inner peripheral edge portion of the second outer mica sheet 1409, so that the inner peripheral edge portion of the second inner mica sheet 1408 is closely attached to the outer peripheral edge portion of the first inner mica sheet 1403, and the inner peripheral edge portion of the second outer mica sheet 1409 is closely attached to the outer peripheral edge portion of the second inner mica sheet 1408.

[0073] Meanwhile, a resistance wire 1405 is intertwined around the outer sides of the first inner mica sheet 1403 and the second inner mica sheet 1408, and the distribution density of the resistance wire 1405 on the surfaces of the first inner mica sheet 1403 and the second inner mica sheet 1408 is the same. Further, the bending points of the resistance wire 1405 distributed on the outer side of the first inner mica sheet 1403 and the bending points of the resistance wire 1405 distributed on the outer side of the second inner mica sheet 1408 are arranged staggeredly. And a plurality of resistance wire 1405 spiral winding structures are evenly distributed on the second outer mica sheet 1409, and the resistance wire 1405 spiral winding structures are formed by winding the resistance wire 1405.

[0074] Further, multiple groups of second limiting rings 1407 are concentrically arranged on the top surface of the first mica sheet 1401, and multiple groups of first limiting rings 1406 are concentrically arranged on the bottom surface of the second mica sheet 1402. Multiple groups of second limiting circles 22 are concentrically arranged on the bottom surface of the cover plate 1, and multiple groups of first limiting circles 21 are concentrically arranged on the top surface of the bottom plate 6. The bottom surface of the cover plate 1 is arranged opposite to the top surface of the first mica sheet 1401, and the top surface of the bottom plate 6 is arranged opposite to the bottom surface of the second mica sheet 1402. Each second limiting circle 22 can be tightly fitted with a second limiting ring 1407, and each first limiting ring 1406 is tightly fitted with a first limiting circle 21, so that the cover plate 1, the bottom plate 6 and the heating mechanism 14 are installed more tightly. The tight fit eliminates the air conduction medium and can keep the heat transfer efficiency between the cover plate 1, the bottom plate 6 and the heating mechanism 14 unchanged all the time.

[0075] Multiple groups of air-permeable pipes 2 are evenly arranged on the bottom surface of the cover plate 1, and an inner sleeve 3 is arranged at the center of the bottom surface of the cover plate 1. The air-permeable pipes 2 can continuously penetrate through the second outer mica sheet and the bottom plate. The resistance wire 1405 is spirally wound outside the air-permeable pipes 2 to form the aforementioned resistance wire 1405 spiral winding structures, and spiral grooves for fitting the resistance wire 1405 are arranged outside each group of air-permeable pipes 2. The gas in the working space can pass through each air-permeable pipe 2 and then contact the semiconductor to be processed, realizing uniform heating of the wafer, and the temperature at the position of each group of air-permeable pipes 2 can make up for the problem of insufficient temperature in the outer circle of the radial direction of the second inner mica sheet 1408.

[0076] In addition, multiple groups of fixing holes 19 are arranged at the bottom edge position of the cover plate 1, and long bolts 20 are installed inside each group of fixing holes 19. Multiple groups of bosses 23 are arranged on the side surface of the bottom plate 6, and fixing columns 5 are arranged at the top of each group of bosses 23. The fixing columns 5 and the fixing holes 19 are matched. By arranging the fixing columns 5 to extend into the fixing holes 19, the cover plate 1 and the bottom plate 6 can be combined by using the fixing columns 5 and the fixing holes 19, and then they can be screwed and fixed inside the working space through the long bolts 20.

[0077] The working mode of the heating component in this embodiment is basically the same as that in the first and second embodiments. The power supply is also connected to the resistance wire 1405. Since the resistance wire 1405 is distributed spirally outside each group of air-permeable tubes 2, the temperatures of multiple groups of air-permeable tubes 2 will increase. As a result, the temperature distributions of the first inner mica sheet 1403, the second inner mica sheet 1408, and the second outer mica sheet 1409 become more uniform. The increase in the temperatures of multiple groups of air-permeable tubes 2 can not only be used to heat gases at lower temperatures but also to make up for the insufficient temperature on the radially outer side of the second outer mica sheet 1409. The heat of the first inner mica sheet 1403, the second inner mica sheet 1408, and the second outer mica sheet 1409 is respectively transferred to the second mica sheet 1402 and the first mica sheet 1401. Multiple groups of second limit rings 1407 and second limit circles 22 are provided between the second mica sheet 1402 and the cover plate 1 for clamping, so that the heat of the second mica sheet 1402 can be better transferred to the cover plate 1. Multiple groups of first limit rings 1406 and first limit circles 21 are provided between the first mica sheet 1401 and the bottom plate 6 for clamping, so that the heat of the first mica sheet 1401 can be better transferred to the bottom plate 6.

[0078] Please refer to Figure 22 , and select a heating component for semiconductor heat treatment in the first embodiment for testing. The diameter of this heating component is about 210 mm, and the diameter of the third mica sheet is about 200 mm, with a thickness of about 0.5 mm. Different sites on the cover plate 1 are selected as temperature test points, where V1 is the temperature control site, V2 is the back temperature control site, and V3 - V6 are any other four heating sites on the cover plate 1. For the test results, please refer to Figure 23 , where the abscissa represents time and the ordinate represents temperature. Temperature data is collected every 5 seconds and plotted into a temperature curve graph. Analyzing the trend of this curve graph shows that the temperature differences among the six temperature test points in different heating stages are relatively small. It can be seen that the heating component for semiconductor heat treatment in this application can achieve a uniform heating effect.

[0079] Using the same method to test multiple specifications of heating component products in the first to third embodiments, the results all show a uniform heating effect, and the service life is extended by more than 20% compared with existing similar products. The heating uniformity, working stability, and service life of the product in the third embodiment are particularly excellent.

[0080] Although embodiments of the present application have been shown and described, the specific embodiments are merely explanations of the present application and are not limitations thereof. The specific features, structures, materials, or characteristics described may be combined in a suitable manner in any one or more embodiments or examples. After reading this specification, those skilled in the art may make modifications, substitutions, and variations that do not make creative contributions to the embodiments as needed, but as long as they are within the scope of the claims of the present application, they are protected by the patent law.

Claims

1. A heating assembly for semiconductor heat treatment, characterized in that: The invention comprises a cover plate (1), a bottom plate (6) and a heating mechanism (14); the heating mechanism (14) is arranged between the cover plate (1) and the bottom plate (6), and comprises a first mica sheet (1401), a second mica sheet (1402) and a third mica sheet; the third mica sheet comprises a first inner mica sheet (1403) and a first outer mica sheet (1404); the first outer mica sheet (1404) is arranged around the first inner mica sheet (1403), and the inner peripheral edge of the first outer mica sheet (1404) is snap-fitted with the outer peripheral edge of the first inner mica sheet (1403); the first inner mica sheet (1403) and the first outer mica sheet (1404) are both staggeredly wound with resistance wires (1405), and the distribution density of the resistance wires (1405) on the surfaces of the first inner mica sheet (1403) and the first outer mica sheet (1404) is the same; Two groups of ceramic sleeves (11) are arranged at the bottom of the base plate (6), and metal sleeves (15) are movably mounted inside the two groups of ceramic sleeves (11) by means of limiting steps (18), a high temperature resistant protective sleeve (17) is sleeved on the metal sleeve (15), the high temperature resistant protective sleeve (17) is arranged between the metal sleeve (15) and the ceramic sleeve (11), and an outer convex ring (16) for engaging the limiting step (18) is arranged on the outside of the metal sleeve (15).

2. The semiconductor heat treatment heating element according to claim 1, characterized in that: The bending point of the resistance wire (1405) distributed outside the first inner mica sheet (1403) and the bending point of the resistance wire (1405) distributed outside the first outer mica sheet (1404) are arranged in a staggered distribution; And / or, the resistance wire (1405) is located on the radial inner side of the first outer mica sheet (1404) and is wound around the bending point and passes through the first inner mica sheet (1403), and the resistance wire (1405) is located on the radial outer side of the first outer mica sheet (1404) and is wound around to form an extension section (24); And / or, the first inner mica sheet (1403) and the first outer mica sheet (1404) are both in the shape of a circular ring; And / or, the inner peripheral edge of the first outer mica sheet (1404) is tightly fitted with the outer peripheral edge of the first inner mica sheet (1403).

3. The semiconductor heat treatment heating assembly according to claim 1, characterized in that: The cover plate (1) is provided with a vent pipe (2) and an inner sleeve (3), and the bottom plate (6) is provided with a first through hole (7) matching the vent pipe (2) and a second through hole (8) matching the inner sleeve (3); And / or, a plurality of anti-collision plates (4) are symmetrically arranged along the circumferential direction on the outer peripheral edge of the cover plate (1); And / or, the cover plate (1) is provided with a plurality of groups of fixing columns (5) for connecting with the bottom plate (6); And / or, a temperature control switch (9) and a temperature monitoring device are connected to the bottom of the base plate (6), and the temperature monitoring device is used to monitor the heating temperature of the heating component.

4. The semiconductor heat treatment heating assembly according to claim 1, characterized in that: The two ends of the resistance wire (1405) extend through the interior of the two groups of metal sleeves (15), and the interior of the two groups of metal sleeves (15) are respectively provided with an output power line (12) and an input power line (12), and the conductive core (13) inside the power line (12) is fixedly connected to the resistance wire (1405) and the metal sleeve (15) by a pressure welding process.

5. A heating assembly for semiconductor heat treatment, characterized in that: The invention comprises a cover plate (1), a bottom plate (6) and a heating mechanism (14); the heating mechanism (14) is arranged between the cover plate (1) and the bottom plate (6), and comprises a first mica sheet (1401), a second mica sheet (1402) and a third mica sheet; the third mica sheet comprises a first inner mica sheet (1403), a second inner mica sheet (1408) and a second outer mica sheet (1409); the inner peripheral edge and the outer peripheral edge of the second inner mica sheet (1408) are respectively aligned with the outer peripheral edge of the first inner mica sheet (1403). The first inner mica sheet (1403) and the second inner mica sheet (1409) are snap-fitted together, the first inner mica sheet (1403) and the second inner mica sheet (1408) are both wound with resistance wires (1405) in an alternating manner, and the distribution density of the resistance wires (1405) on the surfaces of the first inner mica sheet (1403) and the second inner mica sheet (1408) is the same, and the second outer mica sheet (1409) is evenly distributed with a plurality of resistance wire spiral winding structures, and the resistance wire spiral winding structures are formed by winding the resistance wires (1405).

6. The semiconductor heat treatment heating assembly according to claim 5, characterized in that: When the heating mechanism (14) works normally, the heat generated per unit area by the resistance wires on the first inner mica sheet (1403), the second inner mica sheet (1408) and the second outer mica sheet (1409) is the same; and / or, the inner peripheral edge of the second inner mica sheet (1408) is in close contact with the outer peripheral edge of the first inner mica sheet (1403), and the inner peripheral edge of the second outer mica sheet (1409) is in close contact with the outer peripheral edge of the second inner mica sheet (1408); And / or, the bending point of the resistance wire (1405) distributed outside the first inner mica sheet (1403) and the bending point of the resistance wire (1405) distributed outside the second inner mica sheet (1408) are staggered; And / or, the first inner mica sheet (1403) is annular, the second inner mica sheet (1408) is annular and has a plurality of isosceles trapezoidal extensions evenly distributed along the circumferential direction on the outer peripheral edge, the isosceles trapezoidal extensions extend radially outward and are snap-fitted with a plurality of isosceles trapezoidal grooves arranged on the inner peripheral edge of the second outer mica sheet (1409).

7. The semiconductor heat treatment heating element according to claim 5, characterized in that: The cover plate (1) is provided with a vent pipe (2) and an inner sleeve (3), and the vent pipe (2) is in multiple groups and evenly distributed; And / or, a plurality of anti-collision plates (4) are symmetrically arranged along the circumferential direction on the outer peripheral edge of the cover plate (1); And / or, the cover plate (1) is provided with a plurality of groups of fixing columns (5) for connecting with the bottom plate (6); And / or, the bottom plate (6) is provided with a first through hole (7) matching the air permeable tube (2) and a second through hole (8) matching the inner sleeve (3); And / or, a temperature control switch (9) and a temperature monitoring device are connected to the bottom of the base plate (6), and the temperature monitoring device is used to monitor the heating temperature of the heating component.

8. The semiconductor heat treatment heating assembly according to claim 7, characterized in that: The air permeable tube (2) penetrates the second outer mica sheet (1409) along the axial direction, the resistance wire (1405) is located outside the plurality of groups of air permeable tubes (2) and is spirally wound, and a spiral groove for engaging the resistance wire (1405) is provided on the outer wall of the air permeable tube (2).

9. The semiconductor heat treatment heating assembly according to claim 7, characterized in that: Two groups of ceramic sleeves (11) are arranged at the bottom of the base plate (6), and metal sleeves (15) are movably installed inside the two groups of ceramic sleeves (11) by providing a limiting step (18). A high temperature resistant protective sleeve (17) is sleeved on the metal sleeve (15), and the high temperature resistant protective sleeve (17) is arranged between the metal sleeve (15) and the ceramic sleeve (11). An outer convex ring (16) for engaging the limiting step (18) is arranged on the outside of the metal sleeve (15). The two ends of the resistance wire (1405) respectively extend through the inside of the two groups of metal sleeves (15). The inside of the two groups of metal sleeves (15) is respectively provided with an output power line (12) and an input power line (12), and the conductive core (13) inside the power line (12) is fixedly combined with the resistance wire (1405) and the metal sleeve (15) by a pressure welding process.

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