Array substrate, preparation method of array substrate and display panel

Abstract

The invention provides an array substrate, a preparation method of the array substrate and a display panel, and relates to the technical field of display, the array substrate comprises a substrate, a thin film transistor layer formed on the substrate, an organic insulating layer covering the thin film transistor layer and a gas absorbing layer formed above the organic insulating layer, the gas absorption layer can absorb gas released by the organic insulation layer. According to the technical scheme provided by the invention, the product yield of the array substrate can be improved.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to an array substrate, a method for preparing the array substrate, and a display panel. Background Art

[0002] With the rapid development of display technology, users have higher and higher requirements for the picture performance of display panels. Thin Film Transistor (TFT) is a key component in display devices, and the requirements for the typical performance and stability of TFT are also increasing.

[0003] Thin film transistors using metal oxide as active layer materials, such as thin film transistors using indium gallium zinc oxide (IGZO) as active layer, have good current output characteristics, lower leakage current, and higher electron mobility than amorphous silicon thin film transistors, and have become the mainstream driving element in display panels.

[0004] When preparing an array substrate based on IGZO technology, an organic film is usually used as an insulating layer placed on the IGZO active layer to improve the stability of the thin film transistor. However, under certain conditions, such as high temperature, the organic film layer will slowly release small molecular carbon oxide gas. When the gas gathers, the film layer will bulge or even fall off, reducing the product yield of the array substrate. Summary of the invention

[0005] In view of this, the present application provides an array substrate, a method for preparing the array substrate, and a display panel, which are used to improve the product yield of the array substrate.

[0006] In order to achieve the above-mentioned objectives, in the first aspect, an embodiment of the present application provides an array substrate, which includes: a base substrate, a thin film transistor layer formed on the base substrate, an organic insulating layer covering the thin film transistor layer, and a gas absorption layer formed above the organic insulating layer, wherein the gas absorption layer can absorb gas released by the organic insulating layer.

[0007] By forming a gas absorption layer above the organic insulating layer, the gas released by the organic insulating layer can be absorbed, and the film layer can be reduced from falling off, thereby improving the product yield of the array substrate.

[0008] In a possible implementation manner of the first aspect, the gas absorption layer includes a foam material layer and a felt-like spinning layer that are stacked.

[0009] Through the above implementation, the foaming material layer can absorb the gas of the organic insulating layer and form bubbles. The felt-like spinning layer has a large number of gaps, and the bubbles can be fixed and formed in the felt-like spinning layer, so that the effect of absorbing the escaped gas can be achieved on the basis of the film thickness of the foaming material layer and the felt-like spinning layer not changing. In addition, since the foaming material layer and the felt-like spinning layer have a certain degree of softness, the buffering capacity of the array substrate can also be improved.

[0010] In a possible implementation manner of the first aspect, the foaming material layer is formed on the organic insulating layer by inkjet printing or printing process.

[0011] The foaming material layer is formed by adopting inkjet printing or printing process, so that the preparation efficiency of the foaming material layer can be improved.

[0012] In a possible implementation of the first aspect, the felt-like spinning layer is formed on the foaming material layer by an electrostatic stretching spinning method.

[0013] The electrostatic stretching spinning method is used to form a felt-like spinning layer, so that the preparation efficiency of the felt-like spinning layer can be improved.

[0014] In a possible implementation manner of the first aspect, the foaming material layer includes one or more of plastic, rubber, a catalyst, a foam stabilizer and a foaming agent;

[0015] In a possible implementation of the first aspect, the felt-like spinning layer includes one or more of polyester spinning, polyamide spinning, polyvinyl alcohol spinning, polyacrylonitrile spinning, polyurethane spinning and poly(p-phenylene terephthalamide) spinning.

[0016] By adopting the above embodiment, since the foaming material layer and the felt-like spinning layer are prepared from a variety of materials, the reliability of the prepared foaming material layer and the felt-like spinning layer can be improved.

[0017] In a possible implementation manner of the first aspect, a first inorganic layer is formed between the thin film transistor layer and the organic insulating layer, and a second inorganic layer is further covered on the gas absorption layer.

[0018] By forming the first inorganic layer, the adhesion between the thin film transistor layer and the film layer above it can be improved, thereby improving the durability and stability of the thin film transistor. By forming the second inorganic layer, on the one hand, the film adhesion between the gas absorption layer and the second inorganic layer can be improved, and on the other hand, it can also play a role in packaging and pressing the gas absorption layer, facilitating the subsequent deposition and preparation of the metal layer or other film layer on the second inorganic layer.

[0019] In a second aspect, an embodiment of the present application provides a method for preparing an array substrate, which is used to prepare the array substrate according to the first aspect or any implementation manner of the first aspect, and the method includes:

[0020] forming a thin film transistor layer on a substrate;

[0021] forming an organic insulating layer on the thin film transistor layer;

[0022] A gas absorption layer is formed on the organic insulating layer, and the gas absorption layer is used to absorb gas released from the organic insulating layer.

[0023] In a possible implementation manner of the second aspect, forming a gas absorption layer on the organic insulating layer includes:

[0024] forming a foaming material layer on the organic insulating layer;

[0025] A felt-like spinning layer is formed on the foamed material layer.

[0026] In a possible implementation manner of the second aspect, a first inorganic layer is formed between the thin film transistor layer and the organic insulating layer, and a second inorganic layer is formed above the gas absorption layer.

[0027] In a third aspect, an embodiment of the present application provides a display panel, comprising: an array substrate as described in the first aspect or any embodiment of the first aspect, an opposing substrate, and a display medium layer sandwiched between the array substrate and the opposing substrate.

[0028] The array substrate, the method for preparing the array substrate and the display panel provided in the embodiments of the present application, wherein the array substrate comprises a base substrate, a thin film transistor layer formed on the base substrate, an organic insulating layer covering the thin film transistor layer and a gas absorption layer formed on the organic insulating layer, wherein the gas absorption layer can absorb the gas released by the organic insulating layer. The technical solution provided in the present application can improve the product yield of the array substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 A graph of a thermogravimetric experiment provided in an embodiment of the present application;

[0030] Figure 2 A schematic diagram of the shedding of the PFA film layer provided in the embodiment of the present application;

[0031] Figure 3 A schematic diagram of the structure of a gas detection device provided in an embodiment of the present application;

[0032] Figure 4 A schematic diagram of the structure of an array substrate provided in an embodiment of the present application;

[0033] Figure 5 A schematic diagram of the structure of the gas absorption layer provided in the embodiment of the present application;

[0034] Figure 6 A schematic diagram of the process of gas absorption by the gas absorption layer provided in an embodiment of the present application;

[0035] Figure 7 A schematic diagram of a process for preparing an array substrate provided in an embodiment of the present application;

[0036] Figure 8 A schematic diagram of the structure of a bottom-gate thin film transistor provided in an embodiment of the present application;

[0037] Fig. 9 A schematic diagram of the structure of a top-gate thin film transistor provided in an embodiment of the present application;

[0038] Fig.10 A schematic diagram of a process for preparing a gas absorption layer provided in an embodiment of the present application;

[0039] Fig.11 A schematic diagram of the structure of a display panel provided in an embodiment of the present application.

[0040] Description of reference numerals:

[0041] 10-head space assembly; 11-head space bottle; 12-adsorption tube; 20-gas phase analysis assembly; 21-chromatographic column; 22-gas chromatograph detector; 23-mass spectrometer detector; 24-signal analyzer;

[0042] 30-substrate substrate; 31-thin film transistor layer; 311-gate layer; 312-gate insulating layer; 313-active layer; 314-source and drain layer; 315-light shielding layer; 316-buffer layer;

[0043] 32-organic insulating layer; 33-gas absorption layer; 331-foaming material layer; 332-felt spinning layer; 34-first inorganic layer; 35-second inorganic layer; 36-pixel electrode layer;

[0044] 100 - array substrate; 200 - opposite substrate; 300 - display medium layer. DETAILED DESCRIPTION

[0045] The embodiments of the present application are described below in conjunction with the drawings in the embodiments of the present application. The terms used in the implementation method section of the embodiments of the present application are only used to explain the specific embodiments of the present application, and are not intended to limit the present application. The following specific embodiments can be combined with each other, and the same or similar concepts or processes may not be repeated in some embodiments.

[0046] In array substrates, thin-film transistors with metal oxides as active layers have attracted widespread attention in the display industry due to their large ion mobility and small leakage current. Indium Gallium Zinc Oxide (IGZO), as a high-performance transparent conductive oxide, is often used in display technology to improve the transparency and conductivity of thin-film transistors.

[0047] Taking the thin film transistor made of IGZO material as an example, the preparation of thin film transistor needs to be carried out in a high temperature and chemical corrosion environment, which puts higher requirements on the performance reliability of thin film transistor. In related technologies, an organic film layer (also called an organic insulating layer or an organic flat layer) is usually used in combination with IGZO material. The material of the organic film layer may include tetrafluoroethylene-perfluoroalkoxy vinyl ether copolymer (Polyfluoroalkoxy, PFA), polyimide and benzocyclobutene, etc.

[0048] Taking PFA as an example, the main components of the PFA film layer may include polymer resin, photosensitive substances, additives and solvents. Among them, the polymer resin, as the main component of the PFA film layer, can have good thermal curing properties, film-forming properties and alkali solubility when PFA is a positive photoresist, and the photosensitive substance may include a photosensitive compound for achieving alkali solubility reversal; when PFA is a negative photoresist, the polymer resin has not only the above-mentioned properties, but also photocuring properties, so that after being exposed to light, it can quickly undergo chemical changes in a short period of time to form cross-linked and cured oligomers.

[0049] The photosensitive material may include a photoinitiator, which may generate free radicals to initiate photocuring. In addition, when PFA is a negative photoresist, PFA may also include a multifunctional monomer for further improving the photocuring properties of PFA. Additives may include a tackifier and a surface leveling agent, and the solvent may improve the solubility, uniformity and leveling properties of the above materials.

[0050] PFA has good wear resistance and corrosion resistance. Covering the thin film transistor with the PFA film as an organic insulating layer can effectively improve the stability of the thin film transistor and the performance of the product.

[0051] The PFA film layer will release a variety of organic gas products during the OVEN process and subsequent use, resulting in weight loss. Taking the thermal weight loss experiment of two negative PFA materials, DuPont IRIS-510S and Dongjin DN2900L, as an example, in the experiment, DuPont IRIS-510S is used as the main material, and Dongjin PFA is used as the control (Competitor). The thermal weight loss test results can be shown as follows: Figure 1 See Figure 1When the experimental temperature has not reached 50℃, both materials have begun to have a slight weight loss phenomenon (weight decrease). When the temperature is higher than 200℃, the weight loss phenomenon of the two materials continues while keeping the temperature environment unchanged, which proves that PFA material decomposes at high temperature and produces gas products.

[0052] After the gas product escapes from the PFA membrane layer, it will move and gather freely and non-directionally in the adjacent membrane layer. When the amount of gas reaches a certain level, the membrane layer will bulge or even fall off. Figure 2 This shedding phenomenon is more obvious in areas where the lower layer of the PFA film is a metal with poor adhesion or the PFA film is thin. Once the film layer falls off, the product yield and service life of the entire array substrate will be reduced.

[0053] To determine the type of gas released when PFA decomposes at high temperatures, Figure 3 The gas detection device shown is used to collect the generated gas. The gas detection device can use the headspace-GC / MS method to perform gas analysis, and specifically can include a headspace component 10 and a gas phase analysis component 20. The test sample material can be: PFA (35000A) / Si, Si is the carrier of the sample PFA, and the sample size is 5 cm square.

[0054] When performing gas detection, the PFA material can be placed in the headspace bottle 11 for pretreatment. The pretreatment steps are: preheat the sample for 100s at a temperature of 105°C, and then expose the sample to an exposure amount of 23mj to simulate the conditions for preparing the PFA film layer. After that, the sample is heated at a temperature of 240°C for 40 minutes to simulate the effect of temperature on the PFA film layer when preparing other film layers. The adsorption tube 12 can be filled with adsorption material, and the gas generated by the headspace bottle 11 can be enriched and concentrated in the adsorption tube 12 after passing through the pipeline to facilitate subsequent gas phase analysis. The gas generated by the headspace component 10 is separated by the chromatographic column 21, the gas separation and detection by the gas chromatograph detector 22, the gas type identification by the mass spectrometer detector 23, and the recording and analysis by the signal analyzer 24, so as to obtain the gas composition.

[0055] Table 1 is a table of main gas components provided in the embodiment of the present application. As can be seen from Table 1, after the PFA material is heated and baked, a variety of organic intermediates and monomer organic substances will escape, and the main release temperature is above 150°C. In the actual process, the temperature of the PFAOVEN process has reached about 200°C, and the generated gases will gather at adjacent film layers, which will inevitably affect the stability of the film layer structure.

[0056] Table 1

[0057]

[0058] In view of this, an embodiment of the present application provides an array substrate, which can improve the product yield of the array substrate. Figure 4 This is a schematic diagram of the structure of the array substrate provided in the embodiment of the present application. Figure 4 As shown, the array substrate may include a base substrate 30, a thin film transistor layer 31 formed on the base substrate 30, an organic insulating layer 32 covering the thin film transistor layer 31, and a gas absorption layer 33 formed above the organic insulating layer 32, wherein the gas absorption layer 33 can absorb gas released by the organic insulating layer 32.

[0059] The base substrate 30 may be a glass substrate, a plastic flexible substrate, a silicon substrate, etc. The thin film transistor layer 31 may include a plurality of thin film transistors (not shown), each of which may be composed of a plurality of film layers. Taking the thin film transistor as a bottom gate structure as an example, the thin film transistor may exemplarily include a gate layer formed on the base substrate, a gate insulating layer covering the gate layer, an active layer formed on the gate insulating layer, and a source-drain electrode layer.

[0060] The materials of the gate layer and the source-drain layer can be metal to facilitate the transmission of driving signals. The gate insulating layer can isolate the charges between the gate layer and the source-drain layer to prevent the generation of reverse current and leakage current. The material can be an inorganic material, such as silicon oxide or silicon nitride. The thickness of the gate layer, the gate insulating layer and the source-drain layer can be 2000-6000 angstroms. The active layer can control the magnitude of the current between the source and the drain through the voltage on the gate layer. The material can be a metal oxide such as IGZO.

[0061] Figure 5 This is a schematic diagram of the structure of the gas absorption layer provided in the embodiment of the present application. Figure 5 The gas absorption layer 33 may include a foaming material layer 331 and a felt-like spinning layer 332 which are stacked. The foaming material layer 331 may be disposed above the organic insulating layer 32 and in contact with the organic insulating layer 32 .

[0062] The foaming material layer 331 can be formed on the organic insulating layer 32 by inkjet printing or printing process to improve the preparation efficiency, and the thickness can be 500-1500 angstroms. The foaming material refers to a foaming material that can be gasified inside the material to generate bubbles and make it a porous material. The soft foaming material is a plastic (such as polyethylene, ethylene-vinyl acetate copolymer, etc.), rubber (such as styrene-butadiene rubber, chloroprene rubber, etc.), elastomer or natural polymer material as a polymer matrix, and is added with catalysts, foam stabilizers, foaming agents and other auxiliary materials to form a foam gel.

[0063] Taking the foam gel as a polyurethane foam gel as an example, the polyurethane foam gel can be foamed by physical foaming or cross-linking, so that a large amount of fine foam appears in the polymer matrix after absorbing the gas, the volume increases, and the density decreases. The catalyst can choose an amine or oxide catalyst from Evonik, so that it can also be foamed and converted into a polyurethane foam gel at room temperature. The content of the catalyst can be 0.5%-1% of the total mass of the foaming material, so that the life of the foaming material layer 331 absorbing the escaped gas can be extended, so that the foaming material layer 331 can still absorb the gas after the preparation of the array substrate is completed. Of course, the specific content can also be selected according to actual needs.

[0064] By using the foaming material, not only can the gas escaping from the organic insulating layer 32 be absorbed, but also the buffering capacity of the array substrate can be improved. In addition, since the foaming material layer 331 has the characteristics of light weight, good softness and low density, the etching efficiency of the etching process can be improved during dry etching. The gas for dry etching can adopt the existing technology, and the embodiments of the present application will not be repeated here.

[0065] The felt-like spinning layer 332 can be formed on the foaming material layer 331 by an electrostatic stretching spinning method to improve the preparation efficiency, and the thickness can be 2500-3500 angstroms. The felt-like spinning layer 332 has a large number of gaps. For example, the polymer solution or melt can be sprayed and stretched under the action of electrostatics to form a thin stream, and the solvent in the thin stream is evaporated or solidified during the spraying process, so that the thin stream can fall on the collection surface (the foaming material layer 331 in the embodiment of the present application) to form a fiber felt (i.e., the felt-like spinning layer 332) similar to a non-woven fabric. For a detailed description of the electrostatic stretching spinning method, reference can be made to the prior art. Depending on the polymer solution or melt, the felt-like spinning layer 332 can include one or more of polyester spinning, polyamide spinning, polyvinyl alcohol spinning, polyacrylonitrile spinning, polyurethane spinning, and poly(p-phenylene terephthalamide) spinning.

[0066] The materials of the foaming material layer 331 and the felt-like spinning layer 332 are both highly elastic and flexible materials, and thus can disperse the stress of the entire system (i.e., the thin film transistor). That is, when the display device is a liquid crystal display device, the foaming material layer 331 and the felt-like spinning layer 332 can increase the pressure resistance of the array substrate. When the display device is a flexible organic light-emitting diode display device (OLED), the damage to the array substrate caused by the stress when the OLED display device is deformed can be reduced, thereby increasing the service life of the array substrate and further increasing the applicability of the present solution. The preparation temperature of the foaming material layer 331 and the felt-like spinning layer 332 can be selected according to actual needs, and the embodiments of the present application are not particularly limited here.

[0067] In one possible implementation, see Figure 5 A first inorganic layer 34 may be formed between the thin film transistor layer 31 and the organic insulating layer 32. The first inorganic layer 34 may be formed by chemical vapor deposition and may have a thickness of 1000-2000 angstroms. By forming the first inorganic layer 34, the adhesion between the thin film transistor layer 31 and the film layer above it may be improved, thereby improving the durability and stability of the thin film transistor.

[0068] A second inorganic layer 35 may also be covered on top of the gas absorption layer 33, and the thickness may be the same as that of the first inorganic layer 34. The second inorganic layer 35 may also be formed by a chemical vapor deposition process. By forming the second inorganic layer 35 on top of the gas absorption layer 33, on the one hand, in the process of forming the second inorganic layer 35 by chemical vapor deposition, the material of the second inorganic layer 35 may fill part of the gaps on the upper surface of the gas absorption layer 33, so as to improve the film adhesion between the gas absorption layer 33 and the second inorganic layer 35. On the other hand, this may also play a role in encapsulating and pressing the gas absorption layer 33, so as to facilitate the subsequent deposition and preparation of the metal layer or other film layer on the second inorganic layer 35.

[0069] It is understood that in some embodiments, when preparing the first inorganic layer 34, the organic insulating layer 32, the gas absorption layer 33 and the second inorganic layer 35, a non-layer-by-layer deposition method can be used, but at least two of the materials for preparing the first inorganic layer 34, the organic insulating layer 32, the gas absorption layer 33 and the second inorganic layer 35 are mixed, so that a composite film layer can be formed during preparation to improve the preparation efficiency. Exemplarily, the materials for preparing the foaming material layer 331, the felt-like spinning layer 332 and the second inorganic layer 35 can be mixed, and the preparation process can be inkjet printing, printing or liquid phase mixing to simplify the film structure and reduce the thickness of the display panel.

[0070] Figure 6 The schematic diagram of the gas absorption process of the gas absorption layer provided in the embodiment of the present application is shown in FIG. Figure 6 The gas in the organic insulating layer 32 can escape to the side of the foaming material layer 331 , the polyurethane soft foam gel can be foamed and deformed under the action of the catalyst, and the gas can be absorbed by the foaming material layer 331 .

[0071] Specifically, the polyurethane soft foam gel can be foamed and deformed under the action of a catalyst, so that the gas molecules escaping from the organic insulating layer 32 can penetrate into the polymer matrix after entering the foaming material layer 331, and move in the entire polymer matrix through molecular diffusion. When the gas diffuses into the unsaturated area in the polymer matrix, it will gather together to form original tiny bubbles, that is, the bubbles nucleate in the polymer matrix to form bubble nuclei. After the bubble nucleus is formed, the gas molecules dissolved in the polymer matrix begin to gradually diffuse toward the bubble nucleus, causing the bubble pores to continue to expand and grow. Since the felt-like spinning layer 332 has a large number of gaps and the spinning also has good elasticity, the convex bubble nuclei of the foaming material layer 331 can grow in the gaps, see Figure 6 (a).

[0072] During the growth of the pores, the free energy in the system continues to decrease, the driving force for the growth of the pores decreases, and the bubbles gradually become stable and solidified in the felt-like spinning layer 332. Figure 6 (b), the whole process can continue until the user's use stage. During the whole process, the film thickness of the foaming material layer 331 and the felt-like spinning layer 332 does not change, and the stress between the film layers does not increase, so that the film layer structure is relatively stable. In addition, since the bubbles are solidified and shaped in the felt-like spinning layer 332, the bonding force between the foaming material layer 331 and the felt-like spinning layer 332 can be further improved, thereby further improving the stability of the film layer structure.

[0073] By forming a gas absorption layer 33 on the organic insulating layer 32, the escaped gas can be absorbed while maintaining the stability of the film structure, thereby eliminating the need to open holes and grooves in the film layer above the organic insulating layer 32 for exhaust, thereby reducing damage to the film layer of the array substrate, thereby improving the stability of the array substrate.

[0074] The array substrate provided in the present application includes: a base substrate, a thin film transistor layer formed on the base substrate, an organic insulating layer covering the thin film transistor layer, and a gas absorption layer formed above the organic insulating layer. The gas absorption layer can continuously absorb the gas released by the organic insulating layer, reduce the impact of the gas on each film layer in the array substrate, and reduce the stress between the film layers, thereby improving the structural stability and product yield of the array substrate.

[0075] Based on the same inventive concept, the present application also provides a method for preparing an array substrate. Figure 7 A schematic diagram of a process for preparing an array substrate provided in an embodiment of the present application is shown in FIG. Figure 7 As shown, the method may include the following steps:

[0076] S110, forming a thin film transistor layer on the base substrate.

[0077] The thin film transistor layer may include a plurality of thin film transistors, which can be mainly divided into a bottom gate thin film transistor structure and a top gate thin film transistor structure according to the position of the gate electrode and the active layer.

[0078] Figure 8 The schematic diagram of the structure of the bottom-gate thin film transistor provided in the embodiment of the present application is as follows: Figure 8 As shown, the thin film transistor layer 31 may exemplarily include a gate layer 311 formed on the base substrate 30, a gate insulating layer 312 covering the gate layer 311, an active layer 313 formed on the gate insulating layer 312, and a source-drain electrode layer 314 disposed on the active layer 313. Among them, the gate layer 311 and the source-drain electrode layer 314 may be formed by a physical vapor deposition process, and the width of the gate in the gate layer 311 may be greater than the width of the active layer 313 to prevent the active layer 313 from being illuminated by backlight to generate photogenerated carriers, resulting in an increase in the leakage current of the device, and reducing the influence of backlight on the electrical properties of the semiconductor. The gate insulating layer 312 and the active layer 313 may be formed by a chemical vapor deposition process.

[0079] Fig. 9 A schematic diagram of the structure of a top-gate thin film transistor provided in an embodiment of the present application is shown in FIG. Fig. 9 As shown, the thin film transistor layer 31 may include an active layer 313 and a source-drain electrode layer 314 located above the base substrate 30, a gate insulating layer 312 formed above the active layer, and a gate layer 311 located above the gate insulating layer. For a top-gate thin film transistor, in some embodiments, the thin film transistor layer 31 may also include a light shielding layer 315 formed on the base substrate 30, a buffer layer 316 covering the light shielding layer 315, and the active layer 313 and the source-drain electrode layer 314 are formed on the buffer layer 316.

[0080] The light shielding layer 315 can block the backlight to reduce the influence of the backlight on the electrical properties of the semiconductor. The buffer layer 316 can reduce the stress of the film layer and improve the stability of the array substrate under stress. The source and drain layer 314 and the active layer 313 can be arranged in the same layer. For top-gate thin film transistors, this can simplify the manufacturing process and improve the device performance.

[0081] Step S120: forming an organic insulating layer on the thin film transistor layer.

[0082] After the thin film transistor layer is formed, an organic insulating layer 32 may be deposited on the thin film transistor layer by chemical vapor deposition. The material of the organic insulating layer 32 may include soluble polytetrafluoroethylene (Polyfluoroalkoxy, PFA), polyimide, benzocyclobutene, etc.

[0083] In some embodiments, before forming the organic insulating layer 32, a first inorganic layer 34 may be formed on the thin film transistor layer. Figure 8 , to improve the stability of thin film transistors.

[0084] Step S130 , forming a gas absorption layer on the organic insulating layer.

[0085] Taking the material of the organic insulating layer 32 as PFA as an example, the PFA film layer will release a variety of organic gas products during the OVEN process stage and the subsequent use stage, which can easily cause the film layer to bulge or even fall off. By forming a gas absorption layer 33 on the PFA film layer, the escaped gas can be absorbed, thereby improving the structural stability between the film layers.

[0086] See also Fig.10 , step S130 may further include the following sub-steps:

[0087] Step S131 : forming a foaming material layer on the organic insulating layer.

[0088] The foaming material layer 331 may be formed by inkjet printing or printing process, and may absorb the gas escaped from the organic insulating layer 32 to form bubbles.

[0089] Step S132: forming a felt-like spinning layer on the foaming material layer.

[0090] The felt-like spinning layer 332 can be formed on the foaming material layer 331 by electrostatic stretching spinning. There are a lot of gaps in the felt-like spinning layer 332, and the bubbles of the foaming material layer 331 can grow in the gaps without affecting the structural stability of the felt-like spinning layer 332.

[0091] In some embodiments, see Figure 8 and Fig. 9 After forming the felt-like spinning layer 332, a second inorganic layer 35 may be formed on the felt-like spinning layer 332 to improve the stability of the thin film transistor. Of course, in the array substrate, other film layers, such as a pixel electrode layer 36, etc., may be formed on the second inorganic layer 35, and the embodiment of the present application does not specifically limit this.

[0092] Based on the same inventive concept, the embodiment of the present application further provides a display panel, Fig.11 This is a schematic diagram of the structure of the display panel provided in the embodiment of the present application. Fig.11 As shown, the display panel may include the array substrate 100 , the opposite substrate 200 and the display medium layer 300 sandwiched between the array substrate 100 and the opposite substrate 200 as described in the above embodiment.

[0093] The array substrate 100 provided in the embodiment of the present application can be applied not only to liquid crystal display panels, but also to other types of display panels, for example, organic light emitting diode display panels.

[0094] For example, in Figure 8 When the array substrate shown is applied to a liquid crystal display panel, the display medium layer 300 may be a liquid crystal layer. The liquid crystal molecules in the liquid crystal layer may be deflected under the drive of the array substrate 100, thereby controlling the amount of light passing through the liquid crystal layer, and after filtering by the opposite substrate 200, the image is displayed on the liquid crystal display panel.

[0095] exist Fig. 9 When the array substrate shown is applied to an organic light emitting diode display panel, the display medium layer 300 may be a pixel defining layer, wherein an organic light emitting layer is disposed in the pixel defining layer. The organic light emitting layer may emit light under the drive of the array substrate 100, and after being filtered by the counter substrate 200, a picture is displayed on the organic light emitting diode display panel.

[0096] The structure of the array substrate 100 and the functions of each film layer may refer to the above embodiment, and the arrangement of the opposite substrate 200 and the display medium layer 300 may refer to the prior art, which will not be described in detail in this application.

[0097] It is to be understood that those skilled in the art may make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include these modifications and variations.

[0098] Since the display panel in this embodiment includes the array substrate in the above embodiment, that is, the display panel in this embodiment has all the technical features and technical effects of the above array substrate embodiments, specific reference is made to the above embodiment and no further details are given here.

[0099] It should be understood that in the description of the present application specification and the appended claims, the terms "include", "comprises", "has" and any variations thereof are intended to cover non-exclusive inclusions and mean "including but not limited to", unless otherwise specifically emphasized.

[0100] In the description of this application, unless otherwise specified, " / " indicates that the objects associated with each other are in an "or" relationship. For example, A / B can represent A or B. "And / or" in this application is used to describe the association relationship between associated objects, indicating that three relationships may exist. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone, where A and B can be singular or plural.

[0101] Furthermore, in the description of the present application, unless otherwise specified, "plurality" refers to two or more than two. "At least one of the following" or similar expressions refers to any combination of these items, including any combination of single or plural items.

[0102] In addition, in the description of the present application, it should be understood that the terms "longitudinal", "horizontal", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "vertical", "top", "bottom", "inside", "outside", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0103] In the present application, unless otherwise clearly specified and limited, the terms "connection", "connected", etc. should be understood in a broad sense. For example, it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium. It can be the internal connection of two elements or the interaction relationship between two elements. Unless otherwise clearly defined, ordinary technicians in this field can understand the specific meanings of the above terms in this application according to the specific circumstances.

[0104] In addition, in the description of the present specification and the appended claims, the terms "first", "second", etc. are used to distinguish similar objects, but not necessarily to describe a specific order or sequence, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments described herein can be implemented in an order other than that illustrated or described herein; the features defined as "first" or "second" may explicitly or implicitly include at least one of the features.

[0105] In the embodiments of the present application, the words "exemplarily" or "for example" are used to indicate examples, illustrations or explanations. Any embodiment or design described as "exemplarily" or "for example" in the embodiments of the present application should not be interpreted as being more preferred or more advantageous than other embodiments or designs. Specifically, the use of words such as "exemplarily" or "for example" is intended to present related concepts in a specific way.

[0106] References to "one embodiment" or "some embodiments" etc. described in the specification of this application mean that one or more embodiments of the present application include specific features, structures or characteristics described in conjunction with the embodiment. Therefore, the phrases "in one embodiment", "in some embodiments", "in some other embodiments", "in some other embodiments", etc. appearing in different places in this specification do not necessarily refer to the same embodiment, but mean "one or more but not all embodiments", unless otherwise specifically emphasized in other ways.

[0107] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit it. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. An array substrate, characterized in that: include: A base substrate, a thin film transistor layer formed on the base substrate, an organic insulating layer covering the thin film transistor layer, and a gas absorption layer formed above the organic insulating layer, wherein the gas absorption layer can absorb gas released by the organic insulating layer.

2. The array substrate according to claim 1, characterized in that: The gas absorption layer includes a foaming material layer and a felt-like spinning layer which are stacked.

3. The array substrate according to claim 2, characterized in that: The foaming material layer is formed on the organic insulating layer by inkjet printing or printing process.

4. The array substrate according to claim 2, characterized in that: The felt-like spinning layer is formed on the foaming material layer by an electrostatic stretching spinning method.

5. The array substrate according to claim 2, characterized in that: The foaming material layer includes multiple types of plastic, rubber, catalyst, foam stabilizer and foaming agent.

6. The array substrate according to claim 2, characterized in that: The felt-like spinning layer includes one or more of polyester spinning, polyamide spinning, polyvinyl alcohol spinning, polyacrylonitrile spinning, polyurethane spinning and poly(p-phenylene terephthalamide) spinning.

7. The array substrate according to any one of claims 1 to 6, characterized in that: A first inorganic layer is formed between the thin film transistor layer and the organic insulating layer, and a second inorganic layer is also formed on the gas absorption layer.

8. A method for preparing an array substrate, characterized in that: For preparing the array substrate according to claims 1-7, the method comprises: forming a thin film transistor layer on a substrate; forming an organic insulating layer on the thin film transistor layer; A gas absorption layer is formed on the organic insulating layer, and the gas absorption layer is used to absorb gas released from the organic insulating layer.

9. The method according to claim 8, characterized in that The forming of a gas absorption layer on the organic insulating layer comprises: forming a foaming material layer on the organic insulating layer; A felt-like spinning layer is formed on the foamed material layer.

10. A display panel, characterized in that: include: An array substrate, an opposing substrate, and a display medium layer sandwiched between the array substrate and the opposing substrate as described in claims 1-7.

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