Substrate processing apparatus

Abstract

A substrate processing apparatus according to an embodiment of the present invention includes a chamber having a sidewall, a susceptor having an inclined side surface and mounting a substrate inside the chamber, an upper dome covering an upper surface of the chamber and formed of a dielectric material, a lower dome covering a lower surface of the chamber and formed of a dielectric material, and a gasket disposed inside the chamber and between the upper dome and the lower dome. The pad includes a sloped portion having a sloped inner surface opposite the sloped side surface of the base.

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus, and more particularly, to an epitaxial plasma enhanced chemical vapor deposition apparatus that uses a lamp heater to rapidly heat a substrate at a high temperature to deposit a thin film. Background Art

[0002] In semiconductor manufacturing, a single crystal silicon film with the same crystal structure as the single crystal silicon substrate is deposited on a substrate. When growing a single crystal silicon film, inorganic insulating materials such as silicon oxide are deposited and patterned to form a single crystal region only in the silicon exposed portion of the semiconductor surface, which is called Selective Epitaxial Growth (SEG).

[0003] In addition, when manufacturing thin-film solar cells on a large-area substrate, a P-type layer that receives sunlight, an I-type layer that forms electron-hole pairs, and an N-type layer that serves as an opposite electrode of the P-type layer are essential elements. Similarly, a liquid crystal display (LCD) device is based on an array element and a color filter element formed on an array substrate and a color filter substrate, respectively.

[0004] Several photolithography processes are required to manufacture thin film elements for solar cells and liquid crystal display devices. This photolithography process includes a thin film deposition process, a photosensitive layer coating process, an exposure and development process, and an etching process. In addition, this photolithography process is accompanied by various processes such as a cleaning process, an attachment process, a cutting process, etc.

[0005] Plasma Enhanced Chemical Vapor Deposition (PECVD) is a process for forming a thin film while exciting a reaction gas into a plasma state inside a chamber by applying a high RF (Radio Frequency) voltage to an antenna or an electrode.

[0006] Recently, in order to prevent particles or byproducts generated in a process using plasma enhanced chemical vapor deposition from adhering to the inner wall of the chamber, the inner wall is designed with quartz, and upper and lower domes in the upper and lower parts of the chamber are designed with quartz.

[0007] In the deposition process using such plasma enhanced chemical vapor deposition, the pressure inside the chamber is maintained at several mTorr and is maintained at an ultra-high vacuum state of 10E-9 Torr under the basic vacuum state, so as to significantly reduce the number of particles or byproducts generated in the deposition process and reduce the deposition process time, thereby facilitating improving production yield.

[0008] This plasma enhanced chemical vapor deposition has a problem in that a process gas injected into an upper space between the upper dome and the susceptor may be introduced into a lower space in a lower portion of the susceptor to generate particles or byproducts. Summary of the invention

[0009] Technical issues

[0010] An aspect of the present invention is to prevent a process gas injected into an upper space between an upper dome and a lower dome from being introduced into a lower space of a lower portion of the susceptor by using a structure of a gasket disposed between an upper dome and a lower dome and a shape of the susceptor.

[0011] Technical Solution

[0012] A substrate processing apparatus according to an example embodiment includes a chamber having a sidewall, a susceptor having an inclined side surface and mounting a substrate inside the chamber, an upper dome covering an upper surface of the chamber and formed of a dielectric material, a lower dome covering a lower surface of the chamber and formed of a dielectric material, and a liner disposed inside the chamber and between the upper dome and the lower dome. The liner may include an inclined portion having an inclined inner side surface opposite to the inclined side surface of the susceptor.

[0013] In an example embodiment, a first inclination angle of the inclined side surface of the base may be the same as a second inclination angle of the inclined portion of the pad.

[0014] In an example embodiment, each of the first tilt angle and the second tilt angle may be 70 degrees.

[0015] In an example embodiment, the gasket may include an upper gasket having a first inner diameter and disposed adjacent to the upper dome, and a lower gasket continuously connected to the upper gasket and including an inclined portion having a gradually increasing inner diameter. The lower gasket may include a first opening disposed adjacent to a lower surface of the upper gasket to discharge gas, and a second opening disposed on the other side opposite to the first opening to provide a path for the substrate.

[0016] In an example embodiment, the base may have a thickness greater than a height of the first opening or a height of the second opening.

[0017] In an example embodiment, when the susceptor is disposed in the upper position, a distance between the inclined portion of the lower pad and the inclined side surface of the susceptor may be 1 mm to 3 mm.

[0018] In an example embodiment, when the base is disposed in the lower position, a distance between the inclined portion of the lower pad and the inclined side surface of the base may be 7 mm to 13 mm.

[0019] In an example embodiment, the pad may further include a connection portion bent between the upper pad and the lower pad.

[0020] In an example embodiment, the connection portion may have a diameter greater than a diameter of an upper surface of the base and smaller than a diameter of a lower surface of the base.

[0021] In an example embodiment, the base may include a bent portion bent on an upper surface of the base, and the inclined side surface is continuously connected to the bent portion.

[0022] In an example embodiment, the base may include a bent portion bent on an upper surface of the base, and the inclined side surface is continuously connected to the bent portion, and the bent portion of the base may face the connection portion of the pad.

[0023] In an exemplary embodiment, a vertical distance between the bent portion of the base and the connecting portion of the pad may be 4 mm to 7 mm.

[0024] In an example embodiment, the susceptor may be formed of ceramic or graphite, and may have a thickness of 30 mm or more.

[0025] In an example embodiment, when the susceptor is disposed in the processing position, an upper space defined by the susceptor and the upper dome may be smaller than a lower space defined by the lower dome and the susceptor.

[0026] Beneficial Effects

[0027] In the substrate processing apparatus according to example embodiments, process gas introduced into the lower space may be significantly reduced, and generation of particles and by-products may be significantly reduced to stably perform plasma enhanced chemical vapor deposition. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 FIG. 1 is a conceptual diagram showing an in-situ process in a plasma enhanced chemical vapor deposition apparatus according to an embodiment of the present invention.

[0029] Figure 2 It is shown Figure 1 Conceptual diagram of the upper position of a plasma enhanced chemical vapor deposition apparatus.

[0030] Figure 3 It is shown Figure 1 A conceptual diagram of a plasma enhanced chemical vapor deposition device taken along another direction.

[0031] Figure 4 It is shown Figure 1 A cross-sectional perspective view of an upper liner, a lower liner, and a lower dome of a plasma enhanced chemical vapor deposition apparatus.

[0032] Figure 5is a conceptual diagram illustrating a plasma enhanced chemical vapor deposition apparatus according to another embodiment of the present invention. DETAILED DESCRIPTION

[0033] Conventionally, a high processing temperature of about 900 degrees Celsius is required to grow a silicon germanium single crystal or a silicon single crystal layer on a substrate. In semiconductor manufacturing using such selective epitaxial growth, there is an advantage that semiconductor devices having three-dimensional structures such as fin field effect transistors (FIN-FETs) that are difficult to manufacture using conventional planar technology can be easily manufactured.

[0034] Chemical vapor deposition equipment including upper and lower domes use liners to prevent unwanted deposition of thin films on the inner walls of the chamber. The liners may be replaced or cleaned periodically.

[0035] A chemical vapor deposition apparatus according to an exemplary embodiment includes an upper dome and a lower dome, a process gas may be injected into an upper space defined by the upper dome and a susceptor, and the process gas may be discharged through an opening of a liner connected to the upper space. When the process gas supplied to the upper space is introduced into the lower space through the lower dome and the susceptor, an abnormal thin film may be deposited on the lower dome and the liner.

[0036] The gasket according to the present invention may include an upper gasket having a constant inner diameter, a lower gasket continuously connected to the upper gasket and having an inner diameter gradually increasing at a constant inclined angle, and a connecting portion having a curved shape between the upper gasket and the lower gasket.

[0037] The susceptor according to the present invention may have a thickness of 30 mm or more, and the side surface of the susceptor may have an inclined angle. In addition, the pad may have an inclined portion to maintain a constant distance from the inclined side surface of the susceptor.

[0038] When the susceptor is in the processing position (or upper position) to process the substrate, the susceptor may be raised to the connection portion of the pad. The distance (or gap) between the lower pad and the inclined side surface of the susceptor may be maintained at a level of 2 mm. Such a narrow gap may provide low conductance to inhibit the process gas in the upper space from moving into the lower space.

[0039] A first opening for exhaust of process gas and a second opening for entry and exit of the substrate may be formed in the lower liner and may contact the connection portion. Thus, when the susceptor is in the processing position, the inclined side surface of the susceptor may be arranged to be opposite to the first opening and the second opening so that the first opening and the second opening may be substantially closed. However, the connection portion may define a space on the upper side surface of the susceptor, and the connection portion and the first opening may provide a path for exhaust of process gas.

[0040] The susceptor may have a sufficient thickness and may have a height higher than the first opening. In the processing position, the upper surface of the susceptor may be set to be substantially the same as the upper surface of the first opening, and the lower surface of the susceptor may be set to be substantially lower than the lower surface of the first opening. The gap between the inclined side surface of the susceptor and the lower liner may be maintained at a level of 2 mm. Therefore, the processing gas introduced along the direction of the first opening may not be introduced into the lower space due to low conductivity.

[0041] The susceptor according to the present invention may have a thickness sufficient to cover the first opening and the inclined side surface, and may inhibit the process gas injected into the upper space from entering the lower space. Therefore, the lower space may inhibit the generation of abnormal films and particles. In addition, the inclined side surface of the susceptor may inhibit the light of the infrared lamp from entering the upper space, so as to effectively heat the susceptor.

[0042] According to the present invention, the susceptor may be rotated to achieve processing uniformity.

[0043] According to the present invention, by supplying a purge gas to the lower dome and supplying a process gas to the upper space between the upper dome and the susceptor, the process gas can be prevented from flowing into the lower dome to suppress deposition of an abnormal film on the lower dome.

[0044] According to the present invention, when the susceptor is in the processing position, the upper space may be smaller than the lower space. To this end, the height of the lower pad may be higher than the height of the upper pad. As the upper space decreases, the deposition rate may increase.

[0045] In the present invention, the lower liner may have an inclined surface to inject the purge gas supplied from the lower dome in a direction toward the upper dome and install more lamp heaters. Since the gap between the susceptor and the lower liner may be maintained narrow, the purge gas supplied from the lower dome may be injected toward the upper dome to cause a pressure difference. Due to the narrow gap between the susceptor and the lower liner, the process gas injected into the upper space may remain only in the upper space to prevent the lower space from being contaminated.

[0046] In the present invention, the antenna for inductively coupled plasma can be arranged to be spaced apart from the upper dome, and the wire constituting the antenna can be in the form of a strip line, and the strip line can be vertically aligned in the width direction. Therefore, infrared light incident in the direction of the lower dome can be incident on the antenna to a minimum extent. Therefore, the antenna can suppress heating by infrared light, and infrared light reflected from the electromagnetic wave shielding shell can significantly reduce shadows.

[0047] In the present invention, the electromagnetic wave shielding shell surrounding the antenna and shielding the electromagnetic waves can be plated by gold plating so that the infrared light can be reflected and then re-incident on the substrate. In addition, the electromagnetic wave shielding shell can have a cylindrical shape instead of a dome shape to mitigate the situation where the antenna is heated by the re-incident caused by the reflection of the infrared light.

[0048] In the present invention, the lamp heater disposed under the lower dome may be a ring-shaped lamp heater, and may be provided as a plurality of lamp heaters. The ring-shaped lamp heaters may be grouped together to independently control power to uniformly heat the substrate.

[0049] In the present invention, a turbomolecular pump (TMP) connected to an exhaust portion of the chamber may allow a basic vacuum to be maintained inside the chamber, and a stable plasma may be generated at a pressure of several Torr or less even during processing.

[0050] The plasma-assisted chemical vapor deposition according to the present invention can alleviate the performance degradation caused by the inductively coupled plasma antenna set on the upper dome being heated by infrared light, and can provide infrared light reflected from the electromagnetic wave shielding shell back to the substrate to form a uniform thin film on the substrate at a high speed.

[0051] When the lamp heater is applied to a process temperature of about 900 degrees Celsius, it is used to generate Inductive coupling The antenna of the plasma may be heated by the lamp heater to increase the temperature, and thus the resistance value may be increased. Therefore, the antenna may not be able to effectively generate inductively coupled plasma due to energy loss caused by ohmic heating. In addition, the antenna may cast a shadow on the infrared light reflected by the electromagnetic wave shielding housing, making the temperature of the substrate uneven. In order to achieve process stability, the electromagnetic wave shielding housing may be heated to shield the electromagnetic waves while maintaining the antenna at a constant temperature.

[0052] In addition, the electromagnetic wave shielding shell arranged to surround the antenna may reflect a part of the infrared light emitted from the lamp heater, and the remaining part of the infrared light may be absorbed and heated in the electromagnetic wave shielding shell, thereby reducing reliability. The spatially non-uniform temperature distribution in the electromagnetic wave shielding shell may produce spatially non-uniform black body radiation. Therefore, the electromagnetic wave shielding shell can utilize an additional resistance heater to heat to a uniform temperature and can provide spatially uniform black body radiation. The electromagnetic wave shielding shell can be heated to 200 degrees Celsius to 600 degrees Celsius, and when the electromagnetic wave shielding shell enters direct thermal contact with the chamber, heat loss may be increased. Therefore, the electromagnetic wave shielding shell can be thermally isolated from the chamber to significantly reduce heat loss. For example, a heat insulating spacer can be arranged between the electromagnetic wave shielding shell and the chamber to reduce the heat loss of the electromagnetic wave shielding shell. The electromagnetic wave shielding shell can be electrically grounded by an additional wire. The heat insulating spacer can have an annular shape and can be formed by a ceramic material. The heat insulating spacer can be formed by a porous ceramic material.

[0053] Below, the example embodiments will be described more completely with reference to the accompanying drawings showing some example embodiments. However, the example embodiments can be implemented in many different forms and should not be construed as being limited to the embodiments set forth herein. These example embodiments are instead provided to enable the present invention to be thoroughly and completely understood and to fully convey the scope of the example embodiments of the present invention to those of ordinary skill in the art. In the accompanying drawings, the thickness of the layers and regions is exaggerated for clarity. Similar characters and / or numbers in the accompanying drawings indicate similar elements.

[0054] Figure 1 FIG. 1 is a conceptual diagram showing an in-situ process in a plasma enhanced chemical vapor deposition apparatus according to an embodiment of the present invention.

[0055] Figure 2 It is shown Figure 1 Conceptual diagram of the upper position of a plasma enhanced chemical vapor deposition apparatus.

[0056] Figure 3 It is shown Figure 1 A conceptual diagram of a plasma enhanced chemical vapor deposition device taken along another direction.

[0057] Figure 4 It is shown Figure 1 A cross-sectional perspective view of an upper liner, a lower liner, and a lower dome of a plasma enhanced chemical vapor deposition apparatus.

[0058] Please refer to Figures 1 to 4, the plasma enhanced chemical vapor deposition apparatus 100 may include a chamber 160 having a sidewall, a susceptor 172 having an inclined side surface and mounting a substrate inside the chamber 160, an upper dome 152 covering an upper surface of the chamber and formed of a dielectric material, a lower dome 158 covering a lower surface of the chamber and formed of a dielectric material, and a liner 180 disposed inside the chamber and between the upper dome 152 and the lower dome 158. The liner 190 may include an inclined portion 195 having an inclined inner side surface opposite to the inclined side surface 172a of the susceptor.

[0059] The chamber 160 may be formed by a conductor and may have a cylindrical inner space and a rectangular outer space. The chamber 160 may be cooled by cooling water. The chamber 160, the upper dome 152 and the lower dome 158 may be coupled to each other to provide a closed space. The chamber 160 may include a substrate inlet 160a formed on the side surface of the chamber, and an exhaust port 160b formed on the side surface facing the substrate inlet. The exhaust port 160b may be connected to a high vacuum pump 10. The high vacuum pump 10 may be a turbomolecular pump. The high vacuum pump may be maintained at a low base pressure, and may be maintained at a pressure of several Torr or lower even during processing. The upper surface of the exhaust port 160b may be arranged at the same level as the upper surface of the substrate inlet 160a, or higher than the upper surface of the substrate inlet 160a.

[0060] For example, when the upper surface of the exhaust port 160b and the upper surface of the substrate inlet 160a are disposed at the same level, the upper surface of the susceptor 172 may be changed to the same position as the upper surfaces of the exhaust port 160b and the substrate inlet during the process. Therefore, the symmetry inside the chamber may be improved, and the flow of the process gas may be improved to provide uniform thin film deposition.

[0061] When the substrate 174 is introduced through the substrate inlet 160a formed on the side surface of the chamber, the base 172 can mount the substrate 174. The base 172 may have a disc shape and may have a thickness of 30 mm or more. The base 172 may have a thickness H1 of 40 mm or more. The base may include a curved portion 172b curved on the upper surface of the base, and an inclined side surface 172a continuously connected to the curved portion. The first inclination angle of the inclined side surface 172a of the base may be 70 degrees. The thickness H1 of the base may be greater than the height H2 of the first opening or the height H2 of the second opening.

[0062] The susceptor 172 may have the same plate shape as the substrate, and may be formed of ceramic or graphite having improved thermal conductivity. The susceptor 172 may be heated by infrared light incident from a lower portion of the susceptor 172, and the substrate 174 may be heated by heat transfer. In the process, the upper surface of the susceptor may be substantially the same as the upper surfaces of the discharge port and the substrate inlet. The susceptor 172 may be rotated to improve azimuthal symmetry.

[0063] The first lifter 184 may extend along the central axis of the lower dome 158 and may include a first lifter body and a first lift pin having a tripod shape. The first lifter 184 and the second lifter 182 may have a coaxial structure. When the substrate 174 is transferred into the chamber, the first lifter 184 may be raised from a lower position or in situ to support the substrate. Then, the first lifter 184 may be lowered to place the substrate on the pedestal 172. The material of the first lifter 184 may be quartz or metal. The first lifter 184 may be moved vertically by a drive shaft.

[0064] The second lifter 182 may extend along the central axis of the lower dome 158 and may include a second lifter body and a second lift pin having a tripod shape. The second lifter 182 may lift the pedestal 172 on which the substrate is mounted from the original position (or the lower position) to the processing position (or the upper position). In the processing position, the upper surface of the pedestal 172 may be arranged in a plane substantially the same as the upper surface of the second opening 194b for introducing the substrate into the upper pad 190. In addition, in the processing position, the upper surface of the pedestal 172 may be arranged in a plane substantially the same as the upper surface of the first opening 194a for discharging the gas in the pad 190. Therefore, the inclined side surface 172a of the pedestal 172 may be arranged to close the first opening 194a and the second opening 194b. The material of the second lifter 182 may be quartz or metal. The second lifter 182 may be moved vertically by a drive shaft. The second lifter 182 may be rotated to rotate the pedestal.

[0065] The upper dome 152 may be sapphire or quartz as a dielectric material. The upper dome 152 may be inserted into and coupled to a raised spot formed on the upper surface of the chamber 160. In the upper dome 152, a coupling portion coupled to the chamber 160 to provide a vacuum seal may have a gasket shape. The upper dome 152 may have an arc shape or an elliptical shape. The upper dome 152 may allow infrared light incident from a lower portion to pass through the upper dome 152. Infrared light reflected from the electromagnetic wave shielding housing 130 may pass through the upper dome 152 to be incident on the substrate 174 again.

[0066] The lower dome 158 may be sapphire or quartz as a dielectric material. The lower dome 158 may include a funnel-shaped lower dome body 158b, a washer-shaped coupling portion 158a coupled to a lift point formed on the lower surface of the chamber, and a cylindrical flow tube 158c having a cylindrical shape and connected to the center of the lower dome body 158b. The lower dome 158 may be inserted and coupled to the lift point formed on the lower surface of the chamber. The coupling portion 158a of the lower dome 158 coupled to the chamber to provide a vacuum seal may have a washer shape. The drive shaft of the first lifter and the drive shaft of the second lifter may be arranged to be inserted into the cylindrical flow tube 158c. The purge gas supplied through the lower dome may be supplied through a flow path. The flow path may be a cylindrical flow tube 158c. The purge gas may be an inert gas such as argon or nitrogen. The purge gas may inhibit the process gas from being injected into the lower space below the susceptor.

[0067] The pad 190 may be disposed inside the chamber and may be disposed between the upper dome 152 and the lower dome 158. The pad 190 may include an inclined portion 195 having an inclined inner surface. The second inclination angle of the inclined portion 195 of the pad 190 may be equal to the first inclination angle of the inclined side surface 172a of the susceptor. Each of the first inclination angle and the second inclination angle may be 70 degrees. When the first inclination angle is the same as the second inclination angle, the inclined side surface 172a of the susceptor and the inclined portion 195 of the pad may maintain a constant distance. When the susceptor is in the processing position, the inclined side surface 172a of the susceptor and the inclined portion 195 of the pad may be maintained at a minimum gap of 2 mm.

[0068] The gasket 190 may include an upper gasket 192 having a first inner diameter D1 and disposed adjacent to the upper dome, and a lower gasket 194 continuously connected to the upper gasket 192 and including an inclined portion 195 having a gradually increasing inner diameter. The lower gasket 194 may include a first opening 194a disposed adjacent to the lower surface of the upper gasket 192 to discharge gas, and a second opening 194b disposed to provide a path for the substrate to the other side facing the first opening 194a. The gasket 190 may further include a curved connecting portion 196 located between the upper gasket and the lower gasket. The upper gasket 192 and the lower gasket 194 may be formed to be integrated with each other. The gasket 190 may include an upper gasket 192 having a constant inner diameter, a connecting portion 196 having a curvature at the upper gasket and having a gradually increasing diameter, and a lower gasket 194 having a constant inclination angle in a joint portion.

[0069] When the base 172 is in the lower position, the gap between the inclined portion 195 of the lower pad and the inclined side surface 172a of the base may be 7 mm to 13 mm, preferably 11 mm.

[0070] When the base 172 is in the upper position, the gap between the inclined side surface 172a of the base and the inclined portion 195 of the pad can be 1 mm to 3 mm, preferably 2 mm. Such a narrow gap can reduce the cross-sectional area, allowing fluid to flow therethrough to provide low conductivity. The thickness of the base of tens of millimeters or more can provide lower conductivity for the fluid.

[0071] When the pedestal 172 is in the upper position, the vertical distance between the curved portion 172b of the pedestal 172 and the connection portion 196 of the pad may be 4 mm to 7 mm, preferably 5.7 mm. The outer diameter of the upper surface of the pedestal 172 may be substantially equal to the inner diameter D1 of the upper pad 192, or may be several millimeters larger than the inner diameter D1 of the upper pad 192. When the pedestal 172 is raised so that the upper surface of the pedestal 172 matches the upper surface of the first opening, the connection portion 196 may provide an exhaust path that allows the process gas to be exhausted to the first opening.

[0072] The liner 190 may be a transparent or opaque dielectric material. The liner 190 may be quartz, alumina, sapphire, or aluminum nitride. The liner 190 may be selected from materials that inhibit deposition of abnormal thin films. When the liner 190 is contaminated, the liner 190 may be disassembled and cleaned.

[0073] The upper gasket 192 may have an overall annular shape, and an upper surface of the upper gasket 192 may be a curved surface having an upper dome shape. An outer upper surface of the upper gasket 192 may have a flat portion. An inner diameter of the upper gasket 192 may be D1.

[0074] The upper liner 192 may include at least one process gas supply part 159a, 159b supplying a process gas through a side surface of the upper liner. The process gas supply parts 159a, 159b may protrude from an inner surface of the upper liner 172. For example, the process gas supply part may include a first process gas supply part 159a supplying a first process gas such as SiH4, and a second process gas supply part 159b supplying a second process gas.

[0075] The first process gas supply part 159a may protrude more from the side surface of the upper liner to expose a large amount of the first process gas such as SiH4 to the plasma. On the other hand, the second process gas supply part 159b may protrude less from the side surface of the upper liner to expose a small amount of the second process gas such as hydrogen H2 to the plasma. Since the purge gas is introduced into the upper space 12 of the chamber from the lower dome, the purge gas can be uniformly supplied around the circumference to have a spatially uniform pressure distribution.

[0076] The connection portion 196 may have a concave structure with a curvature on the lower inner surface of the upper pad. The connection portion 196 may have a width and depth of several millimeters. The diameter D3 of the connection portion 196 may be greater than the diameter of the upper surface of the base and smaller than the diameter D2 of the lower surface of the base. Therefore, the curved portion 172b of the base may face the connection portion 196 with a preset gap.

[0077] The lower liner 194 may be disposed inside the chamber and have a cylindrical shape around the inner circumference of the upper edge of the lower dome. The lower liner 194 may include an inclined lower outer surface 197a coupled to the lower dome 158, and an inclined portion 195 inclined on the inner surface. The inclined lower outer surface 197a may have a flat portion 197 on the outer side.

[0078] The lower liner 194 may be transparent or opaque quartz. For example, the lower liner may have an inner circumferential surface facing the space of the lower dome, and the inner circumferential surface of the lower liner may have a slope along which the thickness increases from the lower portion to the upper portion of the chamber in the vertical direction. The second inclination angle θ of the inclined portion may be about 70 degrees. The inclined portion 195 may expose the lamp heater 166 to provide more uniform heating, and may scatter incident infrared light to suppress heating of the chamber 160.

[0079] An inert gas (or a purge gas) such as argon, nitrogen, etc. may be injected between the susceptor 172 and the lower liner 194 to suppress the process gas from being injected into the lower space.

[0080] The lower liner 194 may have a first opening 194a formed on an inner side surface adjacent to the upper liner to discharge gas, and a second opening 194b formed on the other side facing the first opening 194a to provide a path to the substrate. The first opening 194a and the second opening 194b may be formed in the inclined portion 195. The first opening 194a may be aligned with the discharge portion, and the second opening 194b may be aligned with the substrate inlet. When the susceptor 172 is set in the upper position, the first opening 194a and the second opening 194b may be basically closed by the susceptor 172 to inhibit the process gas of the upper space 12 from moving to the lower space 14 defined by the susceptor and the lower dome. The first opening 194a, the connecting portion 196, and the curved portion 172b of the susceptor may provide a path through which the process gas can flow.

[0081] The heat insulating portion 162 may be disposed between the lower surface of the chamber 160 and the reflector 160, and may have an annular shape. The heat insulating portion 162 may slow down the transfer of heat from the heated reflector 160 to the chamber. The heat insulating portion 162 may be formed of a ceramic material. The upper surface of the heat insulating portion 162 may be provided with a lifting point. The lifting point of the heat insulating portion and the lifting point of the lower surface of the chamber may accommodate the washer-shaped coupling portion 158a of the lower dome, and the washer-shaped coupling portion 158a of the lower dome may be vacuum-sealed.

[0082] The concentric lamp heater 166 may include a plurality of concentric and annular lamp heaters, and may be connected to a power supply 164. The concentric and annular lamp heaters may be arranged at fixed intervals along the inclined surface of the lower dome 158, and the concentric and annular lamp heaters 166 may be divided into three groups to receive power independently. The concentric and annular lamp heaters may be inserted into an annular groove formed on the inclined surface of the reflector 160 to be aligned. For example, the concentric and annular lamp heaters 166 may be halogen lamp heaters, and eight concentric and annular lamp heaters 166 may be provided. The bottom three lamp heaters may constitute a first group, the middle two lamp heaters may constitute a second group, and the upper three lamp heaters may constitute a third group. The first group may be connected to a first power supply 164a, the second group may be connected to a second power supply 164b, and the third group may be connected to a third power supply 164c. The first power supply 164a, the second power supply 164b, and the third power supply 164c may be independently controlled to uniformly heat the substrate.

[0083] The reflector 160 may support the lower surface of the insulating portion 162 and may be mounted with a lamp heater. The inclined surface on which the lamp heater 166 is mounted may have a conical shape to maintain a preset gap with the inclined surface of the lower dome 158. The reflector 160 may be formed of a conductive material and may be cooled by cooling water.

[0084] The fixture 150 may be arranged to contact the upper surface of the chamber 160 and cover the edge of the upper dome 152. The fixture 150 may be a part of the chamber that performs the same function as the cover of the chamber. The fixture 150 may be formed of a conductive material and may be cooled by cooling water. The lower surface of the fixture 150 may be provided with a lifting point coupled to a washer-shaped coupling portion of the upper dome, and may include a curved portion 150a to cover a portion of the curved portion of the upper dome 152. The curved portion 150a of the fixture 150 may be gold-plated to reflect infrared light. The inner diameter of the fixture 150 may be substantially the same as the inner diameter D1 of the upper pad, or greater than the inner diameter D1 of the upper pad. In addition, the inner diameter of the fixture 150 may be the same as the diameter of the electromagnetic wave shielding shell 130.

[0085] The antenna 110 may be disposed on the upper dome to generate inductively coupled plasma in the upper space 12. The RF power supply 140 may supply RF power to the antenna 110 through an impedance matching box 142 and a power supply line 143.

[0086] The electromagnetic wave shielding shell 130 may be disposed to surround the antenna 110. The heat insulating spacer 339 may be thermally isolated from the electromagnetic wave shielding shell 130 and the upper surface of the chamber. The cooling shell 132 may be disposed to surround the electromagnetic wave shielding shell while being spaced apart from the electromagnetic wave shielding shell. The cooling shell 132 may have a flow path therein and may be cooled by a refrigerant.

[0087] Figure 5 is a conceptual diagram illustrating a plasma enhanced chemical vapor deposition apparatus according to another embodiment of the present invention.

[0088] Please refer to Figure 5 , a plasma chemical vapor deposition apparatus 200 according to an example embodiment may include a chamber 160 having a sidewall, a susceptor 272 having inclined side surfaces 272a, 272b and mounting a substrate inside the chamber, an upper dome 152 covering an upper surface of the chamber 160 and formed of a dielectric material, a lower dome 158 covering a lower surface of the chamber and formed of a dielectric material, and a liner 180 disposed inside the chamber and between the upper dome 152 and the lower dome 158. The liner 190 may include an inclined portion 195 having an inclined inner side surface facing the inclined side surfaces 272a, 272b of the susceptor.

[0089] The base 272 may include a curved portion 272c curved on the upper surface of the base, and the inclined side surfaces 272a, 272b are continuously connected to the curved portion. The inclined side surface may include at least one of the first inclined surface 272a and the second inclined surface 272b. The first inclined surface 272a may not be continuously connected to the second inclined surface 272b. The second inclined surface 272b may narrow the gap between the lower pad 194 and the first inclined surface 272a, and may provide a space sufficient to discharge the process gas to the first opening while controlling the flow direction of the process gas.

[0090] Although the present invention and its advantages have been described in detail, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the invention as defined by the appended claims.

Claims

1. A substrate processing device, comprising: a chamber having a sidewall; a base having an inclined side surface and mounting a substrate inside the chamber; an upper dome covering an upper surface of the chamber and formed of a dielectric material; a lower dome covering a lower surface of the chamber and formed of a dielectric material; and a liner disposed inside the chamber and between the upper dome and the lower dome, in, The gasket includes an inclined portion having an inclined inner side surface opposite to the inclined side surface of the base.

2. The substrate processing apparatus according to claim 1, wherein: A first inclination angle of the inclined side surface of the base is the same as a second inclination angle of the inclined portion of the pad.

3. The substrate processing apparatus according to claim 2, wherein: Each of the first inclination angle and the second inclination angle is 70 degrees.

4. The substrate processing apparatus according to claim 1, wherein: The liner comprises: an upper liner having a first inner diameter and disposed adjacent the upper dome; and a lower gasket continuously connected to the upper gasket and including the inclined portion having a gradually increasing inner diameter, and The lower gasket includes a first opening disposed adjacent to a lower surface of the upper gasket to discharge gas, and a second opening disposed on another side opposite to the first opening to provide a path for the substrate.

5. The substrate processing apparatus according to claim 4, wherein: The base has a thickness greater than a height of the first opening or a height of the second opening.

6. The substrate processing apparatus according to claim 4, wherein: When the base is disposed in an upper position, a distance between the inclined portion of the lower pad and the inclined side surface of the base is 1 mm to 3 mm.

7. The substrate processing apparatus according to claim 4, wherein: When the base is disposed in a lower position, a distance between the inclined portion of the lower pad and the inclined side surface of the base is 7 mm to 13 mm.

8. The substrate processing apparatus according to claim 4, wherein: The gasket further includes a connection portion bent between the upper gasket and the lower gasket.

9. The substrate processing apparatus according to claim 8, wherein: The connection portion has a diameter greater than a diameter of an upper surface of the base and smaller than a diameter of a lower surface of the base.

10. The substrate processing apparatus according to claim 1, wherein: The base includes a bent portion bent on an upper surface of the base, and the inclined side surface continuously connected to the bent portion.

11. The substrate processing apparatus according to claim 8, wherein: The base includes a curved portion curved on an upper surface of the base, and the inclined side surface continuously connected to the curved portion, and The bent portion of the base faces the connecting portion of the pad.

12. The substrate processing apparatus according to claim 11, wherein: A vertical distance between the bent portion of the base and the connecting portion of the pad is 4 mm to 7 mm.

13. The substrate processing apparatus according to claim 1, wherein: The base is formed of ceramic or graphite, and The base has a thickness of 30 mm or more.

14. The substrate processing apparatus according to claim 1, wherein: When the susceptor is disposed in a processing position, an upper space defined by the susceptor and the upper dome is smaller than a lower space defined by the lower dome and the susceptor.

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