Substrate processing method, semiconductor device manufacturing method, program, and substrate processing apparatus

Abstract

The invention provides a technology capable of shortening the time required for cleaning. The technique comprises the following steps: (a) processing a substrate in a processing container; and (b) a first cleaning step for cleaning the inside of the processing container, in which (b) a first cleaning condition is set on the basis of the thickness of the film formed in the processing container in (a), and the cleaning is performed.

Description

Technical Field

[0001] The present invention relates to a substrate processing method, a method for manufacturing a semiconductor device, a program, and a substrate processing device. Background Art

[0002] As one of the steps in the manufacturing process of semiconductor devices, there is a step of supplying a cleaning gas into a processing container of a substrate processing apparatus to clean the processing container (for example, see Patent Document 1).

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 2020-198447 Summary of the Invention

[0006] Problems to be solved by the invention

[0007] Since cleaning takes a long time, productivity may be reduced.

[0008] The present invention provides a technique for shortening the time required for cleaning.

[0009] Means for solving problems

[0010] According to one embodiment of the present invention, a technology is provided, which has the following steps: (a) processing a substrate in a processing container; and (b) performing a first cleaning step of cleaning the inside of the processing container, wherein in (b), the first cleaning condition is set according to the thickness of the film formed in the processing container in (a) to perform the cleaning.

[0011] Effects of the Invention

[0012] According to the present invention, the time required for cleaning can be shortened. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 It is a schematic longitudinal sectional view showing a vertical processing furnace of a substrate processing apparatus according to one embodiment.

[0014] Figure 2 yes Figure 1 AA line schematic cross-sectional view.

[0015] Figure 3 This is a schematic configuration diagram of a controller of a substrate processing apparatus according to one embodiment, and shows a control system of the controller in the form of a block diagram.

[0016] Figure 4 It is a diagram showing a process flow of one embodiment.

[0017] Figure 5 (A) is a diagram for explaining the state inside the reaction tube after the pre-coating step. Figure 5 (B) is a diagram for explaining the state inside the reaction tube after the film forming step. Figure 5 (C) is a diagram for explaining the state inside the reaction tube after the first cleaning step. Figure 5 (D) is a diagram for explaining the state inside the reaction tube after the second cleaning step.

[0018] Figure 6 It is a diagram for explaining a high-temperature region and a low-temperature region of a substrate processing apparatus according to one embodiment. DETAILED DESCRIPTION

[0019] <One embodiment of the present invention>

[0020] The following mainly refers to Figures 1 to 6 This section describes one embodiment of the present invention. The drawings used in the following description are schematic, and the dimensional relationships and ratios of the elements shown in the drawings may not necessarily correspond to actual dimensions. Furthermore, the dimensional relationships and ratios of the elements may not necessarily correspond across multiple drawings.

[0021] (1) Configuration of substrate processing apparatus

[0022] like Figure 1 As shown, the processing furnace 202 includes a heater 207 as a temperature adjustment unit (heating unit). The heater 207 is cylindrical and is vertically mounted by being supported on a holding plate. The heater 207 also functions as an activation mechanism (excitation unit) that activates (excites) the gas using heat.

[0023] Inside heater 207, reaction tube 203 is arranged concentrically with heater 207. Reaction tube 203 is made of a heat-resistant material such as quartz (SiO2) or silicon carbide (SiC) and has a cylindrical shape with a closed top and an open bottom. Below reaction tube 203, manifold 209 (hereinafter referred to as MF209) is arranged concentrically with reaction tube 203. MF209 is made of a metal material such as stainless steel (SUS) and has a cylindrical shape with open top and bottom ends. The upper end of MF209 is configured to engage with the lower end of reaction tube 203, thereby supporting reaction tube 203. An O-ring 220a is provided between MF209 and reaction tube 203 as a sealing member. Like heater 207, reaction tube 203 is mounted vertically. The processing vessel (reaction vessel) is primarily composed of reaction tube 203 and MF209. A processing chamber 201 is formed in the hollow portion of the processing container. The processing chamber 201 is configured to accommodate a wafer 200 as a substrate. Processing of the wafer 200 is performed in the processing chamber 201 .

[0024] Within processing chamber 201, nozzles 249a to 249c, serving as first to third supply units, are disposed so as to penetrate the sidewalls of MF 209. These nozzles 249a to 249c are also referred to as the first to third nozzles, respectively. These nozzles 249a to 249c are made of a heat-resistant material, such as SiO2 or SiC. Gas supply pipes 232a to 232c are connected to these nozzles, respectively. These nozzles 249a to 249c are separate nozzles, and nozzles 249a and 249c are disposed adjacent to nozzle 249b.

[0025] Gas supply pipes 232a to 232c are provided with flow controllers (flow control units), namely mass flow controllers (MFCs) 241a to 241c, and on-off valves, namely valves 243a to 243c, in order from the upstream side of the gas flow. Gas supply pipes 232d and 232f are connected to gas supply pipe 232a downstream of valve 243a. Gas supply pipes 232e and 232g are connected to gas supply pipe 232b downstream of valve 243b. Gas supply pipe 232h is connected to gas supply pipe 232c downstream of valve 243c. MFCs 241d to 241h and valves 243d to 243h are provided in order from the upstream side of the gas flow. Gas supply pipes 232a to 232h are made of a metal material such as SUS.

[0026] like Figure 2As shown, nozzles 249a-249c are each positioned so as to extend upward from the bottom to the top of the inner wall of the reaction tube 203, in the annular space between the inner wall of the reaction tube 203 and the wafers 200, in a plan view. Specifically, nozzles 249a-249c are each positioned along the inner wall of the reaction tube 203, extending from the bottom to the top, in the direction in which the wafers 200 are arranged. Specifically, nozzles 249a-249c are positioned along the wafer arrangement area, lateral to the wafer arrangement area where the wafers 200 are arranged, and in an area horizontally surrounding the wafer arrangement area. When viewed from above, nozzle 249b is positioned so as to be aligned with exhaust port 231a (described later) across the center of wafer 200 loaded into the processing chamber 201. Nozzles 249a and 249c are positioned so as to sandwich a straight line L passing through the center of nozzle 249b and exhaust port 231a from both sides along the inner wall of the reaction tube 203 (the outer periphery of the wafers 200). The straight line L is also a straight line passing through the nozzle 249b and the center of the wafer 200. That is, the nozzle 249c is also arranged on the opposite side of the nozzle 249a across the straight line L. The nozzles 249a and 249c are arranged line-symmetrically with the straight line L as the axis of symmetry. Gas supply holes 250a to 250c for supplying gas are respectively provided on the side surfaces of the nozzles 249a to 249c. The gas supply holes 250a to 250c are respectively opened so as to be opposite (face to face) to the exhaust port 231a in a plan view, and can supply gas toward the wafer 200. A plurality of gas supply holes 250a to 250c are provided from the bottom to the top of the reaction tube 203.

[0027] A first process gas as a raw material gas is supplied from the gas supply pipe 232a through the MFC 241a, the valve 243a, and the nozzle 249a into the process chamber 201. As the first process gas, for example, a metal element-containing gas or a silicon (Si)-containing gas can be used.

[0028] A second process gas as a reaction gas is supplied from the gas supply pipe 232b through the MFC 241b, the valve 243b, and the nozzle 249b into the process chamber 201. As the second process gas, for example, a nitride gas or the like can be used.

[0029] A third process gas serving as a reducing gas is supplied from the gas supply pipe 232c through the MFC 241c, the valve 243c, and the nozzle 249c into the process chamber 201. As the third process gas, for example, a gas containing Si and hydrogen (H) can be used.

[0030] A first cleaning gas (hereinafter referred to as the first CLN gas) is supplied from the gas supply pipe 232d into the processing chamber 201 via the MFC 241d, the valve 243d, the gas supply pipe 232a, and the nozzle 249a. As the first CLN gas, a gas with a selectivity ratio can be used. In addition, as the first CLN gas, a gas that is activated (reacts with the film) in a high-temperature environment, for example, at 400 to 600°C, and can be used to etch at high temperatures. Here, having a selectivity ratio means having a removal rate ratio in the etching of the film, which means selectively etching the target film to be cleaned (hereinafter referred to as CLN). In addition, in this specification, the description of a numerical range such as "400 to 600°C" means that the lower limit and the upper limit are included in the range. Therefore, for example, "400 to 600°C" means "400°C (inclusive) or above and 600°C (inclusive) or below". The same applies to other numerical ranges.

[0031] A second cleaning gas (hereinafter referred to as the second CLN gas) is supplied from the gas supply pipe 232e into the processing chamber 201 via the MFC 241e, the valve 243e, the gas supply pipe 232b, and the nozzle 249b. A gas without selectivity can be used as the second CLN gas. Alternatively, a gas that activates in a low-temperature environment, for example, 200 to 400°C, and that can perform etching even at low temperatures can be used as the second CLN gas.

[0032] Inert gas is supplied from gas supply pipes 232f to 232h through MFCs 241f to 241h, valves 243f to 243h, gas supply pipes 232f to 232h, and nozzles 249a to 249c into the processing chamber 201. The inert gas functions as a purge gas, carrier gas, dilution gas, and the like.

[0033] The first process gas supply system is mainly composed of a gas supply pipe 232a, an MFC 241a, and a valve 243a. The second process gas supply system is mainly composed of a gas supply pipe 232b, an MFC 241b, and a valve 243b. The third process gas supply system is mainly composed of a gas supply pipe 232c, an MFC 241c, and a valve 243c. The first CLN gas supply system is mainly composed of a gas supply pipe 232d, an MFC 241d, and a valve 243d. The second CLN gas supply system is mainly composed of a gas supply pipe 232e, an MFC 241e, and a valve 243e. The inert gas supply system is mainly composed of gas supply pipes 232f to 232h, MFCs 241f to 241h, and valves 243f to 243h.

[0034] Among the various supply systems described above, any or all of them may be configured as an integrated supply system 248, integrating valves 243a-243h, MFCs 241a-241h, and the like. Integrated supply system 248 is configured to connect gas supply pipes 232a-232h, respectively, and to control the supply of various substances (gases) into gas supply pipes 232a-232h, such as the opening and closing of valves 243a-243h and the flow rate adjustment of MFCs 241a-241h, by controller 121, described later. Integrated supply system 248 is configured as a single or split integrated unit, which can be attached to and detached from gas supply pipes 232a-232h, etc., and can be maintained, replaced, or expanded, etc., on an integrated unit basis.

[0035] An exhaust port 231a is provided below the side wall of the reaction tube 203 to exhaust the atmosphere in the processing chamber 201. Figure 2 As shown, the exhaust port 231a is arranged at a position opposite (face to face) to the nozzles 249a to 249c (gas supply holes 250a to 250c) across the wafer 200 in a plan view. The exhaust port 231a can also be arranged along the side wall of the reaction tube 203 from the bottom to the top, that is, along the wafer arrangement area. The exhaust port 231a is connected to the exhaust pipe 231. The exhaust pipe 231 is connected to a vacuum pump 246 as a vacuum exhaust device via a pressure sensor 245 as a pressure detector (pressure detection unit) that detects the pressure in the processing chamber 201 and an APC (Auto Pressure Controller) valve 244 as a pressure regulator (pressure regulation unit). The APC valve 244 is configured to open and close while the vacuum pump 246 is in operation, thereby enabling and stopping vacuum evacuation within the processing chamber 201. Furthermore, while the vacuum pump 246 is in operation, the valve opening is adjusted based on pressure information detected by the pressure sensor 245 to adjust the pressure within the processing chamber 201. The exhaust system is primarily composed of the exhaust pipe 231, the APC valve 244, and the pressure sensor 245. The vacuum pump 246 may also be included in the exhaust system.

[0036] Below MF209, a sealing cover 219 (hereinafter referred to as the cover 219) is provided as a furnace port cover that can airtightly close the lower end opening of MF209. The cover 219 is made of a metal material such as SUS and is formed into a disc shape. On the upper surface of the cover 219, an O-ring 220b is provided as a sealing component that abuts against the lower end of MF209. Below the cover 219, a rotating mechanism 267 is provided for rotating the wafer boat 217 described later. The rotating shaft 255 of the rotating mechanism 267 passes through the cover 219 and is connected to the wafer boat 217. The rotating mechanism 267 is configured to rotate the wafer 200 by rotating the wafer boat 217. The cover 219 is configured to be raised and lowered in the vertical direction by a wafer boat elevator 115 (hereinafter referred to as the elevator 115) as a lifting mechanism provided outside the reaction tube 203. The elevator 115 serves as a transport device (transport mechanism) that moves the cover 219 up and down to carry (transport) the wafer 200 into and out of the processing chamber 201 .

[0037] A shutter 219s, serving as a furnace cover, is installed below the MF 209. When the shutter 219 is lowered to remove the wafer boat 217 from the processing chamber 201, it hermetically seals the lower opening of the MF 209. The shutter 219s is formed of a metal material, such as SUS, and is disc-shaped. An O-ring 220c, serving as a sealing member and contacting the lower end of the MF 209, is installed on the upper surface of the shutter 219s. The opening and closing (lifting and rotating) of the shutter 219s is controlled by a shutter opening and closing mechanism 115s.

[0038] The wafer boat 217, serving as a substrate support, is configured to support multiple wafers 200, for example, 25 to 200, in a horizontal position with their centers aligned. The wafer boat 217 is made of a heat-resistant material such as SiO2 or SiC. Heat shields 218, also made of a heat-resistant material such as SiO2 or SiC, are supported in multiple stages at the bottom of the wafer boat 217.

[0039] A temperature sensor 263 is installed inside the reaction tube 203 as a temperature detector. The power supply to the heater 207 is adjusted based on the temperature information detected by the temperature sensor 263, thereby achieving a desired temperature distribution within the processing chamber 201. The temperature sensor 263 is installed along the inner wall of the reaction tube 203.

[0040] like Figure 3As shown, the control unit (control unit), or controller 121, is comprised of a computer and includes a CPU (Central Processing Unit) 121a, RAM (Random Access Memory) 121b, a storage device 121c, and an I / O port 121d. RAM 121b, storage device 121c, and I / O port 121d are configured to exchange data with CPU 121a via an internal bus 121e. An input / output device 122, such as a touch panel, is connected to controller 121. Furthermore, an external storage device 123 can be connected to controller 121.

[0041] The storage device 121c is composed of, for example, a flash memory, an HDD (Hard Disk Drive), an SSD (Solid State Drive), etc. In the storage device 121c, a control program for controlling the action of the substrate processing device, a process that records the steps or conditions of the substrate processing described later, etc. can be readable and stored. The process composition is composed of the substrate processing device executing each step in the substrate processing described later through the controller 121, and a predetermined result can be obtained, and it functions as a program. Hereinafter, the process, control program, etc. are combined and referred to as a program. In addition, the process is also referred to as a process. When the word program is used in this specification, there are cases where only the process is included, only the control program is included, or both are included. RAM121b is configured as a storage area that temporarily holds the program or data read by CPU121a.

[0042] The I / O port 121d is connected to the above-mentioned MFCs 241a to 241h, valves 243a to 243h, pressure sensor 245, APC valve 244, vacuum pump 246, temperature sensor 263, heater 207, rotation mechanism 267, elevator 115, shutter opening and closing mechanism 115s, and the like.

[0043] The CPU 121a is configured to read and execute a control program from the storage device 121c, and to read a recipe from the storage device 121c based on input of an operation command from the input / output device 122. Based on the contents of the read recipe, the CPU 121a is configured to control the flow rate adjustment of various substances (gases) by the MFCs 241a to 241h, the opening and closing of the valves 243a to 243h, the opening and closing of the APC valve 244 and the pressure adjustment by the APC valve 244 using the pressure sensor 245, the start and stop of the vacuum pump 246, the temperature adjustment of the heater 207 using the temperature sensor 263, the rotation and rotation speed adjustment of the wafer boat 217 by the rotation mechanism 267, the lifting and lowering of the wafer boat 217 by the elevator 115, and the opening and closing of the gate 219s by the gate opening and closing mechanism 115s.

[0044] The controller 121 can be configured by installing the above-mentioned program recorded and stored in the external storage device 123 on a computer. The external storage device 123 includes, for example, a magnetic disk such as an HDD, an optical disk such as a CD, a semiconductor memory such as a USB memory or an SSD. The storage device 121c or the external storage device 123 is configured as a computer-readable recording medium. Hereinafter, these will be collectively referred to as recording media. When the term recording medium is used in this specification, there may be cases where only the storage device 121c is included, only the external storage device 123 is included, or both are included. In addition, the program may be provided to the computer without using the external storage device 123, but using a communication unit such as the Internet or a dedicated line.

[0045] (2) Substrate processing

[0046] Main Use Figures 4 to 6 , a series of processing sequences including a film forming process for forming a film on a wafer 200 using the substrate processing apparatus will be described as a manufacturing process for a semiconductor device (equipment). In the following description, the operations of the various components constituting the substrate processing apparatus are controlled by the controller 121 .

[0047] <Pre-coating process, step S10>

[0048] First, a pre-coating step of forming a film in a processing container before the film forming step will be described.

[0049] [Kong Jingzhou moves in]

[0050] In this step, with the empty wafer boat 217 loaded into the processing container, a film is formed within the processing container. Specifically, a film is formed on the inner wall of the reaction tube 203, the outer surfaces of the nozzles 249a-249c, the inner surfaces of the nozzles 249a-249c, the inner surface of the MF 209, the surface of the wafer boat 217, and the upper surface of the lid 219. Alternatively, the process can be performed while the wafer boat 217 is unloaded. In other words, the processing container is pre-coated.

[0051] [Pre-coating treatment (film formation treatment)]

[0052] (First Processing Gas Supply Step S11)

[0053] In this step, the first process gas is supplied to the processing chamber 201. Specifically, valve 243a is opened to allow the first process gas to flow into the gas supply pipe 232a. The first process gas is flow-regulated by MFC 241a, supplied into the processing chamber 201 through nozzle 249a, and exhausted through exhaust port 231a. At this time, valve 243f is simultaneously opened to allow inert gas to flow into the gas supply pipe 232a. Furthermore, to prevent the first process gas from entering the nozzles 249b and 249c, valves 243g and 243h may be opened to allow inert gas to flow into the gas supply pipes 232b and 232c.

[0054] Here, as the first process gas, for example, a metal element-containing gas can be used. Examples of the metal element-containing gas include gases containing titanium (Ti), aluminum (Al), zirconium (Zr), hafnium (Hf), molybdenum (Mo), gallium (Ga), and indium (In). Examples of the Ti-containing gas include titanium tetrachloride (TiCl4) gas. Furthermore, in addition to the metal element-containing gas, for example, a Si-containing gas can be used as the first process gas. One or more of these gases can be used as the first process gas.

[0055] As the inert gas, rare gases such as nitrogen (N2), argon (Ar), helium (He), neon (Ne), and xenon (Xe) can be used. As the inert gas, one or more of these gases can be used. This also applies to the steps described below.

[0056] (Purge Step S12)

[0057] After a predetermined time has passed since the start of supply of the first process gas, valve 243a is closed to stop the supply of the first process gas into the process chamber 201. Next, the process chamber 201 is evacuated to remove (purge) any remaining gas from the process chamber 201. At this time, valves 243f, 243g, and 243h are opened to supply an inert gas into the process chamber 201. The inert gas functions as a purge gas.

[0058] (Second Processing Gas Supply Step S13)

[0059] Next, the second process gas is supplied to the processing chamber 201. Specifically, valve 243b is opened to allow the second process gas to flow into the gas supply pipe 232b. The second process gas is flow-regulated by MFC 241b, supplied into the processing chamber 201 via nozzle 249b, and exhausted through exhaust port 231a. At this time, valve 243g is simultaneously opened to allow inert gas to flow into the gas supply pipe 232b. Furthermore, to prevent the second process gas from entering the nozzles 249a and 249c, valves 243f and 243h may also be opened to allow inert gas to flow into the gas supply pipes 232a and 232c.

[0060] Here, as the second process gas, for example, a nitriding gas can be used. Examples of the nitriding gas include ammonia (NH3), diimide (N2H2), hydrazine (N2H4), and N3H8 gases. As the second process gas, one or more of these gases can be used.

[0061] (Purge Step S14)

[0062] After a predetermined time has passed since the start of supply of the second process gas, valve 243b is closed to stop the supply of the second process gas into the process chamber 201. Next, the gas remaining in the process chamber 201 is removed (purged) from the process chamber 201 through a process similar to the purge in step S12.

[0063] (Perform step S15 a predetermined number of times)

[0064] By performing steps S11 to S14 asynchronously, i.e., a predetermined number of times (X times, where X is an integer greater than or equal to 1 or 2), a film of a predetermined composition and thickness can be formed on the components within the processing chamber. Here, for example, a titanium nitride (TiN) film is formed.

[0065] (Third Processing Gas Supply Step S16)

[0066] Next, after the cycle of steps S11 to S14 is repeated a predetermined number of times, a third process gas is supplied to the processing chamber 201. Specifically, valve 243c is opened to allow the third process gas to flow into the gas supply pipe 232c. The third process gas is flow-regulated by MFC 241c, supplied into the processing chamber 201 via nozzle 249c, and exhausted through exhaust port 231a. At this time, valve 243h is simultaneously opened to allow an inert gas to flow into the gas supply pipe 232c. Furthermore, to prevent the third process gas from entering the nozzles 249a and 249b, valves 243f and 243g may be opened to allow an inert gas to flow into the gas supply pipes 232a and 232b.

[0067] Here, as the third process gas, for example, a gas containing Si and H can be used. As the gas containing Si and H, for example, a silane-based gas such as monosilane (SiH4) gas, disilane (Si2H6) gas, or trisilane (Si3H8) gas can be used. As the third process gas, one or more of these gases can be used.

[0068] (Purge Step S17)

[0069] After a predetermined time has passed since the start of supply of the third process gas, valve 243c is closed to stop the supply of the third process gas into the process chamber 201. Next, the gas remaining in the process chamber 201 is removed (purged) from the process chamber 201 through a process similar to the purge in step S12.

[0070] (Scheduled number of implementations)

[0071] The above steps S15 to S17 are performed asynchronously, i.e., a predetermined number of times (Y times, where Y is an integer greater than or equal to 1 or 2) of the cycle, thereby processing the components in the container, for example, Figure 5 As shown in FIG. 2A , a film P having a predetermined thickness is formed on the surface inside the reaction tube 203. Here, as the film P, for example, a titanium silicon nitride (TiSiN) film is formed.

[0072] The process is completed through the above series of actions. By means of the above-mentioned pre-coating process, a film different from the film formed on the wafer 200 in the film forming process S20 described later is formed on the surface inside the reaction tube 203 as a film P. Thus, etching using a selective ratio can be performed. In addition, by forming the film P, the adhesion to the inner wall of the reaction tube 203 and the like is improved, and it is difficult for the film to peel off from the inner wall and the like. In addition, the surface roughness of the initial film of the film P can be reduced. In addition, by means of the above-mentioned pre-coating process, the phenomenon of film thickness reduction during film formation can be suppressed. In addition, by means of the above-mentioned pre-coating process, the environment and state inside the processing container before the subsequent film forming process can be adjusted.

[0073] In addition, the supply order or supply timing of the first process gas, the second process gas, and the third process gas in the pre-coating process is not limited to the above-mentioned order or timing.

[0074] [The empty crystal boat moves out]

[0075] After the pre-coating process is completed, the lid 219 is lowered by the elevator 115, opening the lower end of the MF 209. Next, the empty wafer boat 217 is unloaded from the lower end of the MF 209 to the outside of the reaction tube 203. After the wafer boat is unloaded, the gate 219s is moved, and the lower end opening of the MF 209 is sealed by the gate 219s via the O-ring 220c.

[0076] <Film Forming Process, Step S20>

[0077] Hereinafter, a film forming process will be described in which the wafer 200 is loaded into the processing furnace 202 and a film is formed on the wafer 200. That is, in this step, the film forming process is performed on the wafer 200 in the processing container.

[0078] The term "wafer" as used in this specification is intended to refer to the wafer itself, or to a laminate of a wafer and a predetermined layer or film formed on its surface. The term "surface of the wafer" as used in this specification is intended to refer to the surface of the wafer itself, or to the surface of a predetermined layer, etc. formed on the wafer. In this specification, the phrase "forming a predetermined layer on the wafer" is intended to refer to forming the predetermined layer directly on the surface of the wafer itself, or to forming the predetermined layer on top of a layer, etc. formed on the wafer. In this specification, the term "substrate" has the same meaning as the term "wafer".

[0079] [Wafer loading]

[0080] When multiple wafers 200 are loaded into the wafer boat 217, Figure 1 As shown, the wafer boat 217 supporting the plurality of wafers 200 is lifted by the elevator 115 and carried into the processing chamber 201. In this state, the lid 219 closes the lower end opening of the reaction tube 203 via the O-ring 220b.

[0081] The vacuum pump 246 is used to perform vacuum exhaust so that the space inside the processing chamber 201, i.e., the space where the wafer 200 is located, reaches the desired pressure (vacuum degree). At this time, the pressure inside the processing chamber 201 is measured by the pressure sensor 245, and the APC valve 244 performs feedback control (pressure adjustment) based on the measured pressure information. In addition, heating is performed by the heater 207 so that the temperature inside the processing chamber 201 reaches the desired temperature. At this time, the amount of power supplied to the heater 207 is feedback controlled (temperature adjustment) based on the temperature information detected by the temperature sensor 263 so that the temperature inside the processing chamber 201 reaches the desired temperature. In addition, the rotation of the wafer 200 by the rotation mechanism 267 is started. The exhaust in the processing chamber 201, the heating and rotation of the wafer 200 are all continued for at least the period until the processing of the wafer 200 is completed.

[0082] [Film Formation Process] (First Processing Gas Supply Step S21)

[0083] In this step, the first process gas is supplied to the wafers 200 in the processing chamber 201. Specifically, valve 243a is opened to allow the first process gas to flow into the gas supply pipe 232a. The first process gas is flow-regulated by MFC 241a, supplied into the processing chamber 201 through nozzle 249a, and exhausted through exhaust port 231a. At this time, valve 243f is simultaneously opened to allow inert gas to flow into the gas supply pipe 232a. Furthermore, to prevent the first process gas from entering the nozzles 249b and 249c, valves 243g and 243h may be opened to allow inert gas to flow into the gas supply pipes 232b and 232c.

[0084] (Purge Step S22)

[0085] After a predetermined time has passed since the start of supply of the first process gas, valve 243a is closed to stop the supply of the first process gas into the process chamber 201. Next, the gas remaining in the process chamber 201 is removed (purged) from the process chamber 201 through a process similar to the purge in step S12.

[0086] (Second Processing Gas Supply Step S23)

[0087] Next, the second process gas is supplied to the wafers 200 in the processing chamber 201. Specifically, valve 243b is opened to allow the second process gas to flow into the gas supply pipe 232b. The second process gas is flow-regulated by MFC 241b, supplied into the processing chamber 201 via nozzle 249b, and exhausted through exhaust port 231a. At this time, valve 243g is simultaneously opened to allow inert gas to flow into the gas supply pipe 232b. Furthermore, to prevent the second process gas from entering the nozzles 249a and 249c, valves 243f and 243h may be opened to allow inert gas to flow into the gas supply pipes 232a and 232c.

[0088] (Purge Step S24)

[0089] After a predetermined time has passed since the start of supply of the second process gas, valve 243b is closed to stop the supply of the second process gas into the process chamber 201. Next, the gas remaining in the process chamber 201 is removed (purged) from the process chamber 201 through a process similar to the purge in step S12.

[0090] (Scheduled number of implementations)

[0091] By performing the above steps S21 to S24 non-simultaneously, that is, asynchronously, for a predetermined number of times (n times, where n is an integer greater than or equal to 1 or 2), a film of a predetermined composition and a predetermined thickness can be formed on the wafer 200 .

[0092] Here, as a film formed on the wafer 200, a nitride film is formed, for example. As the nitride film, for example, a nitride film containing a metal element is formed. As the nitride film containing a metal element, for example, a TiN film, an aluminum nitride (AlN) film, a gallium nitride (GaN) film, an indium nitride (InN) film, a molybdenum nitride (MoN) film, etc. are formed. In addition, as the nitride film, for example, a silicon nitride (SiN) film is formed.

[0093] (Post-purge and atmospheric pressure recovery)

[0094] After film formation is completed, inert gas is supplied from nozzles 249a to 249c as a purge gas into the processing chamber 201 and exhausted from exhaust port 231a. This purges the processing chamber 201, removing any remaining gas or reaction byproducts (post-purge). The atmosphere in the processing chamber 201 is then replaced with an inert gas (inert gas replacement), and the pressure in the processing chamber 201 is restored to normal pressure (return to atmospheric pressure).

[0095] [Wafer removal]

[0096] Lid 219 is lowered by elevator 115, opening the lower end of MF 209. The processed wafers 200, supported by wafer boat 217, are then unloaded from the lower end of MF 209 to the exterior of reaction tube 203. After the wafer boat is unloaded, gate 219s is moved, sealing the lower end of MF 209 with gate 219s via O-ring 220c. After being unloaded from reaction tube 203, the processed wafers 200 are removed from wafer boat 217.

[0097] When the above-mentioned film forming process is performed, a film is formed in the process container, i.e., on the inner wall of the reaction tube 203, the outer surfaces of the nozzles 249a to 249c, the inner surfaces of the nozzles 249a to 249c, the inner surface of the MF 209, the surface of the wafer boat 217, the upper surface of the cover 219, and other surfaces of the components in the reaction tube 203, and the film is accumulated as a deposit. Figure 5 As shown in (B), in the formation Figure 5 A deposited film F forms on the surface of the film P (A) within the reaction tube 203. When the amount of deposited material, that is, the cumulative thickness of the deposited film F, becomes excessive, the deposited film F may peel off, causing an increase in the amount of particles generated. Therefore, before the deposited film F peels off, a CLN treatment is performed to completely remove the deposited film F within the reaction tube 203. In some cases, a film is formed within the reaction tube 203 after the deposited film F has been completely removed. In this case, the time required for the CLN treatment and film formation is extended, resulting in reduced productivity.

[0098] In the method of the present invention, a first cleaning process (hereinafter referred to as the first CLN process) or a second cleaning process (hereinafter referred to as the second CLN process) is performed based on the thickness of the deposited film F formed in the reaction tube 203 (also referred to as the cumulative film thickness, the amount of deposits). As a result, the time required for CLN can be shortened, thereby improving productivity. Here, the cumulative film thickness refers to the thickness of the deposited film F deposited by the film forming process, and is calculated by subtracting the amount etched by the CLN process when the CLN process is performed. That is, the cumulative film thickness, for example, stores in advance the film thickness formed on the wafer 200 by one film forming process and the amount etched by the CLN process, and each time the film forming process is performed, the number of processes of each process is counted to estimate the cumulative film thickness formed in the reaction tube 203. In addition, the cumulative film thickness can also be measured.

[0099] <First Determination Process, Step S30>

[0100] First, a determination is made as to whether the cumulative film thickness is greater than or equal to a first predetermined value. If the cumulative film thickness is less than the first predetermined value, the process returns to step S20 and the next film formation process is performed on wafer 200. Furthermore, if the cumulative film thickness is greater than or equal to the first predetermined value, the process proceeds to a second determination step S40. Here, the first predetermined value is, for example, 0.015 to 1.0 μm.

[0101] For example, the controller 121 stores the film thickness formed on the wafer 200 by a single film forming step S20 and the film thickness etched by a single first CLN step, and estimates the cumulative film thickness each time the film forming step S20 is performed. Specifically, in this step, the controller 121 counts the number of times the film forming step S20 is performed, i.e., the number of processing operations. When the number of consecutive film forming steps S20 reaches a predetermined number, the controller estimates that the cumulative film thickness is equal to or greater than a first predetermined value.

[0102] Alternatively, the cumulative film thickness may be calculated based on at least one of the processing time, the flow rate of the gas used in the film formation process, and the pressure in the processing chamber 201 .

[0103] <Second Determination Process, Step S40>

[0104] Next, a determination is made as to whether the cumulative film thickness is greater than or equal to a second predetermined value that is greater than the first predetermined value. If the cumulative film thickness is less than the second predetermined value, i.e., greater than or equal to the first predetermined value but less than the second predetermined value, the first CLN step S50, described below, is performed. Furthermore, if the cumulative film thickness is greater than or equal to the second predetermined value, the second CLN step S60, described below, is performed. The second predetermined value is a film thickness at which cracks may form in the deposited film F and / or film P within the reaction tube 203, and is, for example, 0.2 to 3 μm.

[0105] <1st CLN process, step S50>

[0106] In this step, an empty wafer boat 217 is loaded into the processing chamber 201 and a first CLN process is performed to quickly remove at least a portion of the deposited film F accumulated in the processing container. In other words, CLN is performed in the processing container. The first CLN process may also be referred to as a simplified CLN process.

[0107] [Kong Jingzhou moves in]

[0108] The gate opening and closing mechanism 115s moves the gate 219s, opening the lower end of the MF 209. The empty wafer boat 217, i.e., the wafer boat 217 without wafers 200 loaded, is then lifted by the elevator 115 and loaded into the processing chamber 201. In this state, the lid 219 seals the lower end of the MF 209 via the O-ring 220b. Alternatively, the first CLN process can be performed while the wafer boat 217 is unloaded.

[0109] After the empty wafer boat 217 is loaded into the processing chamber 201, vacuum exhaust is performed by the vacuum pump 246 to reduce the pressure in the processing chamber 201 to the desired level. Furthermore, heating is performed by the heater 207 to reduce the temperature in the processing chamber 201 to the desired level. Furthermore, the rotation of the wafer boat 217 by the rotation mechanism 267 is started. The operation of the vacuum pump 246, the heating in the processing chamber 201, and the rotation of the wafer boat 217 continue for at least the duration of this process until the completion of this process. Alternatively, the wafer boat 217 may not be rotated. The process pressure in this process is set to be higher than the process pressure in the second CLN process S60 described later. Furthermore, the process temperature in this process is set to be higher than the process temperature in the second CLN process S60 described later.

[0110] In this specification, the processing temperature refers to the temperature of the wafer 200 or the temperature in the processing chamber 201, and the processing pressure refers to the pressure in the processing chamber 201. In addition, the processing time refers to the time during which the processing is continued. This also applies to the following description.

[0111] [1st CLN process] (supplying the first CLN gas)

[0112] First, the first CLN gas is supplied to the processing chamber 201. Specifically, valve 243d is opened to allow the first CLN gas to flow into the gas supply pipe 232a. The first CLN gas is flow-controlled by MFC 241d, supplied into the processing chamber 201 through nozzle 249a, and exhausted through exhaust pipe 231. Simultaneously, valve 243f is opened to allow inert gas to flow into the gas supply pipe 232a. Furthermore, to prevent the first CLN gas from entering the nozzles 249b and 249c, valves 243g and 243h may be opened to allow inert gas to flow into the gas supply pipes 232b and 232c.

[0113] As the first CLN gas, for example, nitrogen trifluoride (NF3) gas, fluorine (F2) gas, chlorine (Cl2) gas, hydrogen fluoride (HF) gas, etc. As the first CLN gas, one or more of these gases can be used.

[0114] After a predetermined time has elapsed and the first CLN process in processing chamber 201 is complete, valve 243d is closed, stopping the supply of the first CLN gas into processing chamber 201. Specifically, the first CLN gas is supplied briefly into reaction tube 203, where the first CLN target film is being formed. Next, the processing chamber 201 is purged using the same process steps as described above. The atmosphere in processing chamber 201 is then replaced with an inert gas (inert gas replacement).

[0115] Through the above series of operations, the first CLN process is completed.

[0116] In this process, CLN is performed by setting a first CLN condition based on the cumulative film thickness of the deposited film F. Specifically, when the thickness of the deposited film F deposited in the reaction tube 203 is greater than or equal to a first predetermined value and less than a second predetermined value, the first CLN process is performed according to the first CLN condition. Here, the first CLN condition refers to a condition in which an amount equal to or less than the thickness of the deposited film F deposited in the reaction tube 203 is etched. For example, the first CLN condition refers to a condition in which the deposited film F formed in the film formation step S20 is etched, while the film P formed in the pre-coating step S10 is not etched.

[0117] Specifically, for example, when the deposited film F to be CLN is a TiN film, NF3 gas is used as the first CLN gas. Figure 5 As shown in (C), etching can be performed so that at least a portion of the deposited film F, that is, the film P formed in the pre-coating step remains.

[0118] In addition, as the first CLN gas, Figure 6 In this process, the film formed in the high temperature region H of the processing chamber 201 can be etched. Figure 6 The film formed in the low temperature region L can partially etch the film formed in the high temperature region H with a thicker cumulative film thickness. The high temperature region H can also be called a product region where wafers 200 serving as product substrates are arranged.

[0119] Furthermore, the processing pressure in this step is set higher than the processing pressure in the second CLN step S60 described later. This allows etching of the film formed in the high-temperature region H of the reaction tube 203. Specifically, a portion of the film formed in the high-temperature region H, where the cumulative film thickness is greater than that of the film formed in the low-temperature region L, can be etched.

[0120] Furthermore, the processing temperature in this step is set higher than the processing temperature in the second CLN step S60 described later. This allows a difference to be created between the temperature in the high-temperature region H and the temperature in the low-temperature region L outside the high-temperature region H. In other words, the temperature in the high-temperature region H and the temperature in the low-temperature region L can be made non-uniform. In other words, a portion of the film formed in the high-temperature region H, where the cumulative film thickness is greater, can be etched compared to the film formed in the low-temperature region L.

[0121] Furthermore, the supply time of the first CLN gas in this step is set to be shorter than the supply time of the second CLN gas in the second CLN step S60 described later. Thus, in this step, the film formed in the high-temperature region H can be etched. In other words, a portion of the film formed in the high-temperature region H, where the cumulative film thickness is greater than that of the film formed in the low-temperature region L, can be etched.

[0122] Furthermore, as described above, a gas with a selectivity ratio is used as the first CLN gas. This allows etching of at least a portion of the deposited film F, the target film for CLN formed within reaction tube 203, while leaving the film P unetched. Specifically, the deposited film F formed in the film formation step S20 can be etched while the film P formed in the pre-coating step S10 is not etched and left unetched. Consequently, SiO2 on the inner wall of reaction tube 203 and the like can be prevented from peeling off. Specifically, by setting the first CLN conditions based on the cumulative film thickness of the deposited film F and performing CLN, a predetermined amount of film can be left unetched within reaction tube 203.

[0123] Here, for example, in the case of an impermeable film such as a TiN film, heat from heater 207 is difficult to transfer to wafer 200. If the thickness of a film formed on the inner wall of the processing container varies significantly, the temperature within reaction tube 203 may differ between substrate processing immediately after CLN and subsequent substrate processing. Therefore, in this process, the film formed within reaction tube 203 is allowed to remain, maintaining the impermeable state within reaction tube 203. This reduces temperature fluctuations within reaction tube 203 and facilitates temperature control.

[0124] The thickness of the film etched in this step may be the same as, thicker than, or thinner than the thickness of the deposited film F formed in the film forming step S20. In either case, after this step, a film thinner than a predetermined thickness is formed within the reaction tube 203. It is preferred that the film P remain. Furthermore, it is preferred that an impermeable film remain.

[0125] Furthermore, when forming a TiN film in the film forming step S20, for example, abnormal growth nuclei grow along with the TiN crystal growth. In this step, the abnormal growth nuclei formed on the surface of the TiN film in the reaction tube 203 are removed (etched). As a result, the surface of the TiN film formed in the reaction tube 203 is etched and flattened.

[0126] [The empty crystal boat moves out]

[0127] After the first CLN process is completed, the lid 219 is lowered by the elevator 115, opening the lower end of the MF 209. Next, the empty wafer boat 217 is unloaded from the lower end of the MF 209 to the exterior of the reaction tube 203. After the wafer boat is unloaded, the gate 219s is moved, sealing the lower end of the MF 209 via the O-ring 220c. Next, the next plurality of wafers 200 are loaded onto the wafer boat 217, and the film formation step S20 described above is performed.

[0128] <Second CLN Step, S60>

[0129] In this step, an empty wafer boat 217 is carried into the processing chamber 201 , and a second CLN process is performed for a longer time than the first CLN process described above to remove the deposited films F and P deposited on the inner wall of the reaction tube 203 .

[0130] [Kong Jingzhou moves in]

[0131] The gate opening and closing mechanism 115s moves the gate 219s, opening the lower end of the MF 209 (the gate is open). The empty wafer boat 217, i.e., the wafer boat 217 without wafers 200 loaded, is then lifted by the elevator 115 and loaded into the processing chamber 201. In this state, the lid 219 seals the lower end of the MF 209 via the O-ring 220b. Alternatively, the second CLN process can be performed while the wafer boat 217 is unloaded.

[0132] After the empty wafer boat 217 is loaded into the processing chamber 201, vacuum exhaust is performed by the vacuum pump 246 to achieve the desired pressure in the processing chamber 201. In addition, heating is performed by the heater 207 to achieve the desired temperature in the processing chamber 201. In addition, the rotation of the wafer boat 217 by the rotation mechanism 267 is started. The operation of the vacuum pump 246, the heating in the processing chamber 201, and the rotation of the wafer boat 217 are continued for at least until the CLN process is completed. In addition, the wafer boat 217 does not need to be rotated. The processing pressure in this process is set to be lower than the processing pressure in the above-mentioned first CLN process S50. In addition, the processing temperature in this process is set to be lower than the processing temperature in the above-mentioned first CLN process S50.

[0133] [2nd CLN Processing]

[0134] (Supplying the second CLN gas)

[0135] First, the second CLN gas is supplied to the processing chamber 201. Specifically, valve 243e is opened to allow the second CLN gas to flow into the gas supply pipe 232b. The second CLN gas is flow-regulated by MFC 241e, supplied into the processing chamber 201 through nozzle 249b, and exhausted through exhaust pipe 231. Simultaneously, valve 243g is opened to allow inert gas to flow into the gas supply pipe 232b. Furthermore, to prevent the second CLN gas from entering the nozzles 249a and 249c, valves 243f and 243h may be opened to allow inert gas to flow into the gas supply pipes 232a and 232c.

[0136] As the second CLN gas, for example, at least one of fluorine (F2), nitrogen trifluoride (NF3), chlorine trifluoride (ClF3), chlorine (Cl2), boron trichloride (BCl3), and bromine (Br2) can be used. Preferably, a gas different from the first CLN gas is used.

[0137] After the predetermined time has elapsed and the second CLN process in processing chamber 201 is complete, valve 243e is closed, stopping the supply of the second CLN gas into processing chamber 201. Specifically, the second CLN gas is supplied to reaction tube 203, where the second CLN target film is being formed, for a longer period than the supply period of the first CLN gas. Then, the processing chamber 201 is purged using the same process steps as described above. The atmosphere in processing chamber 201 is then replaced with an inert gas (inert gas replacement).

[0138] Through the above series of operations, the second CLN processing is completed.

[0139] In this process, CLN is performed by setting a second CLN condition based on the cumulative film thickness of the deposited film F. Specifically, when the thickness of the deposited film F deposited in the reaction tube 203 reaches or exceeds a second predetermined value that is greater than the first predetermined value, a second CLN process is performed according to the second CLN condition. Here, the second CLN condition is a condition for etching a film having a thickness greater than the thickness of the deposited film F deposited in the reaction tube 203, and is also a condition for etching the film P formed in the reaction tube 203. Specifically, the second CLN process is performed according to the second CLN condition until the film P formed in the reaction tube 203 is completely etched.

[0140] That is, according to the cumulative film thickness of the deposited film F, the second CLN condition is set and CLN is performed, so that Figure 5 As shown in (D), the deposited film F and the film P formed in the reaction tube 203 are etched.

[0141] As the second CLN gas, use Figure 6The gas shown etches the entire film formed within the reaction tube 203, including the low-temperature region L of the reaction tube 203. Here, the low-temperature region L refers to the area where the product substrate, i.e., wafer 200, is not placed, and includes, for example, the thermal insulation area and the periphery of the lid of the reaction tube 203. That is, in this process, the entire film formed within the reaction tube 203, including the low-temperature region L, can be etched.

[0142] Furthermore, the processing pressure in this step is set lower than the processing pressure in the first CLN step S50 described above. This allows etching of the entire film formed in the reaction tube 203 including the low temperature region L of the reaction tube 203 .

[0143] The supply time of the second CLN gas in this step is set longer than the supply time of the first CLN gas in the first CLN step S50 . Therefore, in this step, the film formed in the entire processing chamber 201 including the low temperature region L can be etched.

[0144] Furthermore, the processing temperature in this step is set lower than the processing temperature in the first CLN step S50 described above, thereby making the temperature in the processing chamber 201 uniform.

[0145] Specifically, when the cumulative film thickness in reaction tube 203 is less than a first predetermined value, the next substrate processing step is performed. Subsequently, if the cumulative film thickness exceeds the first predetermined value, the first CLN process is performed in a short time, followed by the substrate processing step. Furthermore, if the cumulative film thickness exceeds a second predetermined value, which is greater than the first predetermined value, the second CLN process is performed. This allows for more efficient CLN processing in a shorter time compared to when the first CLN process is not performed.

[0146] Furthermore, different CLN gases are used for the first CLN gas and the second CLN gas, thereby making it possible to set different CLN targets, that is, to selectively perform etching.

[0147] Next, after the second CLN step S60 is performed, a pre-coating step S10 is performed to form a film P in the reaction tube 203. That is, the inside of the reaction tube 203 is pre-coated.

[0148] (3) Effects of this method

[0149] According to this aspect, one or more of the following effects can be obtained.

[0150] (a) The first CLN process is performed in a short time according to the cumulative film thickness of the deposited film deposited in the processing container, thereby shortening the time required for CLN.

[0151] (b) In addition, by performing the first CLN process or the second CLN process according to the cumulative film thickness of the deposited film deposited in the processing container, the time required for CLN can be shortened compared to the case where the first CLN process is not performed, thereby improving productivity.

[0152] (c) In addition, by performing the first CLN step, a portion of the film formed in the processing container remains, maintaining the non-transmitting state in the processing container, thereby reducing the temperature change in the processing container and facilitating temperature control.

[0153] (d) In addition, by using different CLN gases for the first CLN gas and the second CLN gas, selective etching can be performed.

[0154] (e) In addition, by forming a film different from the film formed on the wafer in the film forming step as the film P, etching utilizing the selectivity can be performed.

[0155] (f) Furthermore, by performing a pre-coating step after the second CLN step, the surface roughness of the initial film in the film P can be reduced. Furthermore, the film thickness reduction phenomenon can be suppressed during the subsequent film formation step. Furthermore, the environment and conditions within the processing chamber can be adjusted for the subsequent film formation step.

[0156] (4) Other Implementation Methods

[0157] The embodiments of the present invention have been described above in detail. However, the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the spirit and scope of the present invention.

[0158] For example, the above embodiment describes a case where the target film for CLN, i.e., the film formed in the film forming step S20, is a TiN film. However, the present invention is not limited to this embodiment, and this embodiment can also be used when the target film for CLN is a film containing at least one of elements such as Si, Al, Ti, Zr, Hf, Mo, W, Co, and Ni. This embodiment also achieves the same effects as the above embodiment.

[0159] Alternatively, in the first determination step S30 of the above embodiment, the film thickness of the product substrate may be used as the first predetermined value. That is, the first CLN step may be performed each time product substrate production begins. This method also achieves the same effects as the above method.

[0160] In addition, it is preferred that the process used in each treatment be individually prepared according to the treatment content and pre-stored in the storage device 121c via a communication line or an external storage device 123. Furthermore, it is preferred that when each treatment is started, the CPU 121a appropriately selects an appropriate process from the multiple processes recorded and stored in the storage device 121c according to the treatment content. This allows a single substrate processing apparatus to reproducibly form films of various film types, composition ratios, film qualities, and film thicknesses. Furthermore, the burden on operators is reduced, operational errors are avoided, and various treatments can be started quickly.

[0161] Furthermore, the above-described process is not limited to being created from scratch; for example, it can be prepared by modifying an existing process already installed in a substrate processing apparatus. When modifying a process, the modified process can be installed in the substrate processing apparatus via a communication line or a recording medium containing the modified process. Furthermore, it is also possible to directly modify an existing process installed in the substrate processing apparatus by operating the input / output device 122 of the existing substrate processing apparatus.

[0162] Furthermore, the above embodiments describe an example of film formation using a batch-type substrate processing apparatus that processes multiple substrates at a time. However, the present invention is not limited to this embodiment and, for example, can also be suitably applied to film formation using a single-wafer-type substrate processing apparatus that processes one or more substrates at a time. Furthermore, the above embodiments describe an example of film formation using a substrate processing apparatus with a hot-wall processing furnace. However, the present invention is not limited to this embodiment and can also be suitably applied to film formation using a substrate processing apparatus with a cold-wall processing furnace.

[0163] When these substrate processing apparatuses are used, various processes can be performed using the same processing steps and processing conditions as those in the above-mentioned method and other methods, thereby obtaining the same effects as those in the above-mentioned method and other methods.

[0164] In addition, the above-mentioned method and other methods can be used in combination as appropriate. In this case, the processing steps and processing conditions can be made the same as those of the above-mentioned method and other methods, for example.

[0165] Explanation of symbols

[0166] 200 wafers (substrates)

[0167] 203 reaction tube.

Claims

1. A substrate processing method, characterized in that: The process is as follows: (a) processing a substrate in a processing container; and (b) performing a first cleaning step of cleaning the inside of the processing container, In (b), the cleaning is performed by setting the first cleaning condition according to the thickness of the film formed in the processing container in (a).

2. The substrate processing method according to claim 1, characterized in that: The first cleaning condition is a condition for etching an amount smaller than the thickness of the film.

3. The substrate processing method according to claim 1, characterized in that: (c) Each time (a) is performed, the thickness of the film is estimated.

4. The substrate processing method according to claim 3, characterized in that: The thickness of the film is calculated based on at least one of a processing time, a number of processing times, a flow rate of a gas used in the processing, and a pressure in the processing container.

5. The substrate processing method according to claim 3, characterized in that: The substrate processing method comprises the following steps: (d) when the thickness of the film is equal to or greater than a first predetermined value, performing (b) and then performing (a).

6. The substrate processing method according to claim 5, characterized in that: The above substrate processing method has the following steps: (e) when the thickness of the film is equal to or greater than a second predetermined value greater than the first predetermined value, setting a second cleaning condition so as to etch the film having a thickness equal to or greater than the thickness of the film in (a); and (f) A second cleaning step of performing cleaning according to the second cleaning condition.

7. The substrate processing method according to claim 6, characterized in that: In (e), the second cleaning condition is set so as to also etch the pre-coating film formed in the processing container.

8. The substrate processing method according to claim 7, characterized in that: The substrate processing method comprises the following steps: (g) after step (f), pre-coating is performed in the processing container.

9. The substrate processing method according to claim 1, characterized in that: The substrate processing method includes the step of forming a pre-coating film in the processing container before step (a).

10. The substrate processing method according to claim 9, characterized in that: The pre-coating film is a film different from the film formed on the substrate in (a).

11. The substrate processing method according to claim 9, characterized in that: In (b), the film formed in (a) is etched, but the pre-coating film is not etched.

12. The substrate processing method according to claim 1, characterized in that: In (b), the film formed in the product region of the processing container is etched.

13. The substrate processing method according to claim 5, characterized in that: In (b), etching is performed on the film formed in the product region of the processing container. In (d), the film formed on the entire processing container is etched.

14. The substrate processing method according to claim 5, characterized in that: In (b), etching the film formed in the high temperature region of the processing container, In (d), the film formed in the low temperature region of the processing container is etched.

15. The substrate processing method according to claim 5, characterized in that: In (b) and (d), different cleaning gases are used.

16. The substrate processing method according to claim 14, characterized in that: In (b), at least one gas selected from the group consisting of NF3, F2, Cl2, and HF is used. In (d), at least one gas selected from the group consisting of NF3, F2, Cl2, Br2, BCl3, and ClF3 is used.

17. A method for manufacturing a semiconductor device, characterized in that: The above manufacturing method has the following steps: (a) processing a substrate in a processing container; and (b) performing a first cleaning step of cleaning the inside of the processing container, In (b), the cleaning is performed by setting the first cleaning condition according to the thickness of the film formed in the processing container in (a).

18. A program, characterized in that The computer enables the substrate processing device to perform the following steps: (a) processing a substrate in a processing container; (b) performing a first cleaning step of cleaning the inside of the processing container; and In (b), the cleaning is performed by setting the first cleaning condition according to the thickness of the film formed in the processing container in (a).

19. A substrate processing device, characterized in that: have: Disposal containers; and The control unit is configured to be able to control so as to perform the following processing: (a) processing a substrate in a processing container; (b) performing a first cleaning process of cleaning the inside of the processing container; and In (b), the cleaning is performed by setting the first cleaning condition according to the thickness of the film formed in the processing container in (a).

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