Substrate processing apparatus, method for manufacturing semiconductor device, and program

Abstract

The present invention provides a technique provided with: a substrate support capable of supporting at least one substrate; a processing container into which the plurality of substrate supports are respectively loaded and which processes the substrate supported by the substrate supports; a storage unit that stores the cumulative value of the film thickness of each of the processing container and the plurality of substrate supports; and a control unit configured so as to be able to control, when the accumulated value of the processing container is equal to or greater than a threshold value defined in advance, the cleaning time of the processing container, which is defined in advance, to be allocated for each of the substrate supports in accordance with the accumulated value of the substrate supports, and to control the cleaning time of the processing container, which is defined in advance, to be allocated for each of the substrate supports in accordance with the accumulated value of the substrate supports. And a cleaning unit configured to perform a cleaning process of the processing container and the substrate support by performing entry and exit of the substrate support into the processing container in accordance with the allocated cleaning time of each of the substrate support.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus, a method for manufacturing a semiconductor device, and a program. Background Art

[0002] As a substrate processing device for processing a substrate, there is a structure that is configured to have a processing container and a substrate holder (also called a substrate support) that holds the substrate in multiple layers, and performs film forming processing on the substrate in a state where the substrate holder is inserted into the processing container. In such a substrate processing device, if the film forming processing of the substrate is repeatedly performed, a film may also accumulate in the processing container or the substrate holder. In this case, cleaning is sometimes performed on both the processing container and the substrate holder to remove the accumulated film.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2013-214726 Summary of the invention

[0006] Means for solving problems

[0007] The present disclosure provides a technology for efficiently performing cleaning to remove accumulated films in a substrate processing apparatus using a plurality of substrate supports for one processing container.

[0008] According to one aspect of the present disclosure, the following technology is provided, wherein

[0009] a substrate support capable of supporting at least one substrate;

[0010] a processing container into which the plurality of substrate supports are respectively carried and processes the substrates supported by the substrate supports;

[0011] a storage unit storing an accumulated value of the film thickness of each of the processing container and the plurality of substrate supports;

[0012] A control unit is configured to control the pre-defined cleaning time of the processing container to be allocated to each substrate support according to the cumulative value of the substrate support when the cumulative value of the processing container becomes above a pre-defined threshold value, and to move the substrate support into and out of the processing container in accordance with the allocated cleaning time of each substrate support, and to perform cleaning processing of the processing container and the substrate support.

[0013] Effects of the Invention

[0014] According to the present disclosure, cleaning for removing accumulated films can be efficiently performed for one processing container in a substrate processing apparatus using a plurality of substrate supports. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 It is an overall perspective view of a substrate processing apparatus.

[0016] Figure 2 It is a plan cross-sectional view of a substrate processing device.

[0017] Figure 3 It is a longitudinal sectional view of a processing furnace of a substrate processing apparatus.

[0018] Figure 4 This is a block diagram showing a controller unit of a substrate processing apparatus.

[0019] Figure 5 This is a flow chart of the film thickness monitoring process.

[0020] Figure 6 This is a flowchart of part of the processing of the main control unit after receiving the cleaning signal.

[0021] Figure 7 This is a flowchart of the cleaning time allocation process.

[0022] Figure 8 This is a table showing a specific example of the allocation of cleaning time.

[0023] Fig. 9 It is a flow chart of the cleaning process.

[0024] Fig.10 The drawings are explanatory diagrams showing the positions of wafer boats during cleaning processing, wherein (A) shows a first wafer boat arranged in a processing chamber, (B) shows a second wafer boat arranged in a processing chamber, and (C) shows a third wafer boat arranged in a processing chamber. DETAILED DESCRIPTION

[0025] Below, while referring to the attached Figure 1 The present embodiment is described while explaining the present embodiment. In addition, the drawings used in the following description are all schematic diagrams, and the relationship between the dimensions of the elements shown in the drawings, the ratio of the elements, etc. are not necessarily consistent with the actual situation. In addition, the relationship between the dimensions of the elements, the ratio of the elements, etc. between multiple drawings are not necessarily consistent. In addition, the processing temperature in this specification refers to the temperature of the substrate (wafer 7) or the temperature in the processing chamber (processing chamber 101).

[0026] (Structure of substrate processing apparatus)

[0027] The substrate processing apparatus 1 of the present embodiment processes a substrate by executing a substrate processing recipe based on a recipe defining a processing program and processing conditions, and is configured as a vertical batch type substrate processing apparatus that processes a plurality of substrates simultaneously.

[0028] As a substrate to be processed, for example, a semiconductor wafer substrate (hereinafter referred to as "wafer") manufactured in a semiconductor integrated circuit device (semiconductor device (equipment)) can be cited. In addition, as a typical example of the processing performed by the substrate processing device, a film forming processing such as a processing of forming a thin film on the surface of the wafer can be cited.

[0029] Figure 1 1 is an overall perspective view of a substrate processing apparatus 1 for implementing a method for manufacturing an apparatus. The substrate processing apparatus 1 includes a housing 2 configured as a pressure-resistant container. Figure 1 A receiving and transferring table 8 for transferring and receiving a substrate storage container, i.e., a wafer box 50, is provided at the lower left side of the figure.

[0030] The wafer cassette 50 is a sealed transport container that transports a predetermined number of wafers 7 to be processed, and has an openable and closable lid. Specifically, for example, a FOUP (front opening unified pod) is used as the wafer cassette 50 .

[0031] The transfer station 8 is used to transfer the wafer box 50 between the substrate processing apparatus 1 and the outside, and is provided with an opening and closing device (not shown) for opening and closing a cover (not shown) of the wafer box 50. In addition, corresponding to the transfer station 8, a wafer loading and unloading port (not shown) is opened on the front wall of the frame 2 to communicate with the inside and outside of the frame 2.

[0032] The wafer transfer unit 11, the boat transfer unit 12, and the processing furnace 13 are roughly arranged in the housing 2. The structure of the processing furnace 13 will be described later.

[0033] (Wafer transfer unit)

[0034] like Figure 1 or Figure 2As shown, the wafer transfer unit 11 is arranged to face the transfer platform 8 across the wafer loading and unloading port, and is configured to transfer the wafer 7 between the wafer box 50 on the transfer platform 8 and the wafer boat 21 as a substrate holder supported by the wafer boat transfer unit 12 described later. More specifically, the wafer transfer unit 11 includes: an elevator 42 having a lifting mechanism; an elevator base 43 that is lifted and lowered by the elevator 42; a rotating table 44 that is arranged to be rotatable on the elevator base 43; and a wafer transfer head 46 that is arranged to be able to move forward and backward on the rotating table 44. On the wafer transfer head 46, the wafer transfer plates 47 that hold the wafers 7 are arranged in a predetermined number of layers in the up and down direction. Moreover, the wafer transfer unit 11 is configured to load and unload the wafers 7 to the wafer boat 21 through the cooperation of lifting, rotating, and moving forward and backward.

[0035] The wafer transfer unit 11 is electrically connected to a mechanical control unit 205 of the controller unit 200 described later, and is configured to control operations such as lifting, rotating, and advancing and retreating according to instructions from the mechanical control unit 205 .

[0036] (Wafer transfer unit)

[0037] like Figure 1 or Figure 2 As shown, the wafer boat transfer unit 12 is arranged in the rear area of ​​the wafer transfer unit 11 (the back side when viewed from the front of the frame 2), has four platforms 4A, 4B, 4C, 5 for supporting the wafer boat 21, and is constructed to transfer the wafer boat 21 between the platforms 4A, 4B, 4C, 5.

[0038] The wafer boat 21 is configured to horizontally hold a plurality of wafers 7 (eg, 50 to 200) aligned in the vertical direction. The wafer boat 21 is made of a heat-resistant material such as quartz (SiO2) or silicon carbide (SiC).

[0039] The four platforms 4A, 4B, 4C, and 5 include: a transfer position (hereinafter referred to as "TR") platform 5 which is located at the position closest to the wafer transfer unit 11 for loading or unloading the wafer 7 through the wafer transfer unit 11; exit position (hereinafter referred to as "ES") platforms 4B and 4C which are located away from the wafer transfer unit 11; and a wafer boat loading position (hereinafter referred to as "BL") platform 4A which is located between these and directly below the processing furnace 13.

[0040] The boat transfer unit 12 includes a boat elevator 20 provided corresponding to the BL stage 4A. The boat elevator 20 is configured to carry the boat 21 from the BL stage 4A into the processing furnace 13 and carry it out from the processing furnace 13 to the BL stage 4A.

[0041] Further, if Figure 2 As shown, the boat transfer unit 12 includes boat transfer mechanisms 30A and 30B, which are disposed at positions opposite to the boat elevator 20 across the BL stage 4A. The boat transfer mechanisms 30A and 30B are configured to transfer the boat 21 between the TR stage 5, the BL stage 4A, and the ES stages 4B and 4C. The boat transfer mechanism 30A includes an upper arm 32 and a lower arm 31. The boat transfer mechanism 30B includes an arm 33. The upper arm 32, the lower arm 31, and the arm 33 are all formed in an arc shape so as to be able to fit into a predetermined position of the boat 21.

[0042] The boat elevator 20 and the boat transfer mechanisms 30A and 30B are electrically connected to a mechanical control unit 205 in the controller unit 200 described later. The boat transfer unit 12 is configured to control the lifting and transfer of the boat 21 according to instructions from the mechanical control unit 205 .

[0043] (Processing Room)

[0044] like Figure 3 As shown, the processing furnace 13 includes a process tube 103. The process tube 103 includes an inner tube 104 and an outer tube 105 arranged on the outside thereof. The inner tube 104 is made of a heat-resistant material such as quartz (SiO2) or silicon carbide (SiC). The inner tube 104 is formed into a cylindrical shape with an upper end and a lower end opened. A processing chamber 101 for processing a wafer 7 as a substrate is formed in the hollow portion of the tube inside the inner tube 104. Therefore, the inner tube 104 is configured to be loaded with a wafer boat 21 and can accommodate the wafer boat 21 that is unloaded. The outer tube 105 is set to be concentric with the inner tube 104. The inner diameter of the outer tube 105 is larger than the outer diameter of the inner tube 104, and is formed into a cylindrical shape with a closed upper end and an open lower end. The outer tube 105 is made of a heat-resistant material such as SiO2 or SiC.

[0045] (Heater)

[0046] A heater 106 is provided outside the process tube 103 so as to surround the side wall surface of the process tube 103. The heater 106 is configured to generate heat by supplying power to the heater element wire, and is vertically installed by being supported by the heater base 151. A temperature sensor 163 is provided between the inner tube 104 and the outer tube 105. The heater 106 and the temperature sensor 163 are electrically connected to the temperature control unit 202 of the controller unit 200 described later.

[0047] (Manifold)

[0048] A manifold 109 is disposed below the outer tube 105 so as to form a concentric circle with the outer tube 105. The manifold 109 is made of, for example, stainless steel, and is formed into a cylindrical shape with an open upper end and a lower end. The manifold 109 is engaged with the lower end of the inner tube 104 and the lower end of the outer tube 105, respectively, and is provided to support them. In addition, an O-ring 120a as a sealing member is provided between the manifold 109 and the outer tube 105. Although not shown in the figure, the manifold 109 is supported by the heater base 151, whereby the process tube 103 is vertically installed. The process tube 103 and the manifold 109 form a processing container.

[0049] (First gas supply system)

[0050] In the manifold 109, a nozzle 130a for supplying a silicon-containing gas as a first gas into the processing chamber 101 is provided to be connected to the processing chamber 101. The upstream end of the nozzle 130a is connected to the downstream end of the gas supply pipe 132a. In the gas supply pipe 132a, a first gas supply source 171, a valve 162a, a mass flow controller (MFC) 141a and a valve 161a are provided in order from the upstream side. The first gas supply system is mainly constituted by the nozzle 130a, the gas supply pipe 132a, the MFC 141a, the valves 161a and 162a. The first gas supply source 171 may also be included in the first gas supply system. The MFC 141a, the valves 161a and 162a are electrically connected to a gas flow control unit 204 of the controller unit 200 described later.

[0051] (Second gas supply system)

[0052] In the manifold 109, a nozzle 130b for supplying a nitrogen-containing gas as a second gas into the processing chamber 101 is arranged to be connected to the processing chamber 101. The upstream end of the nozzle 130b is connected to the downstream end of the gas supply pipe 132b. In the gas supply pipe 132b, a second gas supply source 172, a valve 162b, an MFC141b and a valve 161b are arranged in sequence from the upstream side. The second gas supply system is mainly constituted by the nozzle 130b, the gas supply pipe 132b, the MFC141b, the valves 161b and 162b. The second gas supply source 172 may also be included in the second gas supply system. The MFC141b, the valves 161b and 162b are electrically connected to a gas flow control unit 204 of the controller unit 200 described later.

[0053] (Third gas (cleaning gas) supply system)

[0054] A gas supply pipe 132e is connected to the downstream side of the gas supply pipe 132a from the valve 161a to supply a cleaning gas such as a fluorine (F)-containing gas as the third gas into the processing chamber 101. As the F-containing gas, for example, chlorine trifluoride (ClF3) gas, chlorine fluoride (ClF) gas, nitrogen trifluoride (NF3) gas, hydrogen fluoride (HF) gas, fluorine (F2) gas, etc. can be used. As the F-containing gas, one or more of these can be used. In the gas supply pipe 132e, a third gas supply source 174, a valve 162e, an MFC 141e, and a valve 161e are provided in order from the upstream side.

[0055] Furthermore, a gas supply pipe 132f for supplying a third gas into the processing chamber 101 is connected to the downstream side of the gas supply pipe 132b from the valve 161b. The upstream end of the gas supply pipe 132f is connected to the upstream side of the valve 162e of the gas supply pipe 132e. The valve 162f, the MFC 141f, and the valve 161f are provided in the gas supply pipe 132f in order from the upstream side.

[0056] The third gas supply system is mainly composed of the nozzles 130a, 130b, the gas supply pipes 132a, 132b, 132e, 132f, the MFCs 141e, 242f, and the valves 161e, 161f, 162e, 162f. The third gas supply source 174 may be included in the third gas supply system.

[0057] The MFCs 141e and 141f and the valves 161e, 161f, 162e, and 162f are electrically connected to a gas flow control unit 204 of a controller unit 200 described later.

[0058] (Fourth gas (inert gas) supply system)

[0059] A gas supply pipe 132c is connected to the downstream side of the valve 161a of the gas supply pipe 132a to supply nitrogen (N2) gas, which is an inert gas serving as the fourth gas, into the processing chamber 101. The gas supply pipe 132c includes a fourth gas supply source 173, a valve 162c, an MFC 141c, and a valve 161c in this order from the upstream side.

[0060] In addition, a gas supply pipe 132d for supplying a fourth gas into the processing chamber 101 is connected to the downstream side of the valve 161b of the gas supply pipe 132b. The upstream end of the gas supply pipe 132d is connected to the upstream side of the valve 162c of the gas supply pipe 132c. In the gas supply pipe 132d, a valve 162d, an MFC 141d, and a valve 161d are provided in order from the upstream side.

[0061] The fourth gas supply system is mainly composed of the nozzles 130a, 130b, the gas supply pipes 132a, 132b, 132c, 132d, the MFCs 141c, 141d, and the valves 161c, 161d, 162c, 162d. The fourth gas supply source 173 may be included in the fourth gas supply system.

[0062] The MFCs 141c, 141d, valves 161c, 161d, 162c, 162d are electrically connected to a gas flow control unit 204 of a controller unit 200 described later. The gas supply system of the present disclosure is mainly composed of at least one of the first gas supply system, the second gas supply system, the third gas supply system, and the fourth gas supply system.

[0063] (Exhaust system)

[0064] An exhaust pipe 131 for exhausting the atmosphere in the processing chamber 101 is provided in the manifold 109. The exhaust pipe 131 is arranged at the lower end of the cylindrical space 150 formed by the gap between the inner tube 104 and the outer tube 105, and is connected to the cylindrical space 150. A vacuum exhaust device 146 such as a vacuum pump is provided on the downstream side of the exhaust pipe 131 (the connection side and the opposite side to the manifold 109) via a pressure sensor 145 and a variable flow conductance valve such as an APC (Auto Pressure Controller) valve and other pressure adjustment devices 142. The vacuum exhaust device 146 is configured to exhaust in a manner that the pressure in the processing chamber 101 becomes a predetermined pressure (vacuum degree). The pressure adjustment device 142 and the pressure sensor 145 are electrically connected to a pressure control unit 203 in the controller unit 200 described later.

[0065] By configuring as described above, the first gas, the second gas, the third gas, and the fourth gas rise in the inner tube 104 (inside the processing chamber 101), flow out from the upper end opening of the inner tube 104 to the cylindrical space 150, flow down in the cylindrical space 150, and are exhausted from the exhaust pipe 131. The exhaust system of this embodiment is mainly composed of the exhaust pipe 131 and the pressure regulating device 142. The vacuum exhaust device 146 may also be included in the exhaust system.

[0066] (Sealing cover)

[0067] The lower part of the manifold 109 is hermetically closed by a sealing cover 19 provided in the boat elevator 20 of the boat transfer unit 12. That is, the sealing cover 19 functions as a furnace port cover that can hermetically close the lower end opening of the manifold 109, so that it abuts against the lower end of the manifold 109 from the vertical lower side. The sealing cover 19 is formed into a disc shape by metal such as stainless steel. An O-ring 120b as a sealing member abutting against the lower end of the manifold 109 is provided on the upper surface of the sealing cover 19.

[0068] (Rotation mechanism)

[0069] A rotating mechanism 154 for rotating the wafer boat 21 is provided near the center of the seal cap 19 and on the opposite side of the processing chamber 101. A rotating shaft 155 of the rotating mechanism 154 passes through the seal cap 19 and supports the wafer boat 21 from below. The rotating mechanism 154 is configured to be able to rotate the wafer boat 21.

[0070] (Jingzhou Lift)

[0071] The sealing cover 19 is configured to be raised and lowered in the vertical direction by a wafer boat elevator 20 vertically provided outside the process tube 103. By raising and lowering the sealing cover 19, the wafer boat 21 can be transported in and out of the processing chamber 101. The mechanical control unit 205 of the controller unit 200 described later is electrically connected to the rotation mechanism 154 and the wafer boat elevator 20.

[0072] (Baffle)

[0073] Furthermore, a furnace port baffle 147 is provided below the manifold 109 as a second furnace port cover body capable of airtightly closing the lower end opening of the manifold 109. The furnace port baffle 147 is configured to abut against the lower end of the manifold 109 after the wafer boat 21 is unloaded from the processing chamber 101 by lifting and rotating, and airtightly close the processing chamber 101 after the wafer boat 21 is unloaded. An O-ring 120c is provided on the upper surface of the furnace port baffle 147 as a sealing member abutting against the lower end of the manifold 109.

[0074] (3) Controller unit structure

[0075] The processing operation of the substrate processing apparatus 1 configured as above is controlled by instructions from the controller unit 200 as a control unit. The controller unit 200 may be arranged in the housing 2 of the substrate processing apparatus 1, or may be provided separately from the housing 2 of the substrate processing apparatus 1 and electrically connected via a communication line or the like.

[0076] Hereinafter, the configuration of the controller unit 200 according to the present embodiment will be described with reference to the drawings.

[0077] like Figure 4As shown, the controller unit 200 is configured to include a main control unit 201 and multiple control units, all of which are constructed by computers. The computer mentioned here performs information processing instructed by the program by executing a program. Specifically, it is composed of a combination of a CPU (Central Processing Unit), a RAM (Random Access Memory), a memory, an input and output device, etc. As multiple control units, there are a temperature control unit 202, a pressure control unit 203, a gas flow control unit 204 and a mechanical control unit 205. The temperature control unit 202, the pressure control unit 203 and the gas flow control unit 204 are connected to the process control unit 216, and the mechanical control unit 205 is connected to the conveying control unit 217. The process control unit 216 and the conveying control unit 217 are connected to the I / O port 208 via a communication line, and are connected to the main control unit 201 via bus B.

[0078] The temperature control unit 202 is configured to control the power supply to the heater 106 at a desired timing based on the temperature information detected by the temperature sensor 163 so that the temperature in the processing chamber 101 has a desired temperature distribution.

[0079] The pressure control unit 203 is configured to control the pressure regulating device 142 at a desired timing based on the pressure information detected by the pressure sensor 145 so that the pressure in the processing chamber 101 becomes a desired pressure.

[0080] The gas flow control unit 204 is configured to control the gas flow rate supplied to the processing chamber 101. More specifically, the gas flow control unit 204 is configured to control the MFC 141a, valves 161a, and 162a, respectively, so that the flow rate of the silicon-containing gas supplied to the processing chamber 101 becomes a predetermined flow rate at a predetermined timing. In addition, the gas flow control unit 204 is configured to control the MFC 141b, valves 161b, and 162b, respectively, so that the flow rate of the nitrogen-containing gas supplied to the processing chamber 101 becomes a predetermined flow rate at a predetermined timing. In addition, the gas flow control unit 204 is configured to control the MFC 141e, 141f, valves 161e, 161f, 162e, and 162f, respectively, so that the flow rate of the cleaning gas supplied to the processing chamber 101 becomes a predetermined flow rate at a predetermined timing. Furthermore, the MFCs 141 c and 141 d and the valves 161 c , 161 d , 162 c , and 162 d are controlled so that the flow rates of the inert gas supplied into the processing chamber 101 become predetermined flow rates at predetermined timings.

[0081] The mechanical control unit 205 is configured to control the wafer transfer unit 11 , the boat transfer mechanism 30 , the boat elevator 20 , the rotation mechanism 154 , etc. to perform desired operations at desired timings.

[0082] The main control unit 201 controls the temperature control unit 202 , the pressure control unit 203 , and the gas flow control unit 204 via the process control unit 216 , and controls the mechanical control unit 205 via the transport control unit 217 , thereby controlling the overall operation of the substrate processing apparatus 1 .

[0083] In addition, in addition to the above-mentioned control units, the main control unit 201 is also connected to an operation unit 211 such as a touch panel and a display unit 212 such as a display, an external communication unit 213 for communicating with the outside, and an external storage unit 214 which is an external storage unit.

[0084] The controller unit 200 is provided with a storage unit 207. The storage unit 207 has a storage device such as a hard disk device, and is configured to store various programs and recipes for performing operations of the substrate processing device 1. In addition, the recipes stored in the storage unit 207 include a maintenance recipe for cleaning the inside of the processing chamber 101 in addition to the recipes defining the processing program and processing conditions of the substrate processing process. For example, a gas cleaning recipe or a purge cleaning recipe is stored in the storage unit 207 as a maintenance recipe. The storage unit 207 is connected to the main control unit 201 via a bus B.

[0085] The controller unit 200 includes a monitoring unit 220 and a calculation unit 222. The monitoring unit 220 and the calculation unit 222 are both constructed by a computer, and perform information processing instructed by the program by executing a program. As described later, the monitoring unit 220 has a function of monitoring the cumulative film thickness A0 of the processing chamber 101, and performs film thickness monitoring processing. As described later, the calculation unit 222 has a function of allocating cleaning time according to the cumulative value of the film thickness of each of the plurality of wafer boats 21, namely the first wafer boat 21a, the second wafer boat 21b, and the third wafer boat 21c, and performs a cleaning time allocation processing for allocating cleaning time.

[0086] The controller 200 can be configured by installing the above-mentioned program stored in the external storage unit 124 on a computer. The external storage unit 124 includes, for example, a disk such as an HDD, an optical disk such as a CD, an optical disk such as an MO, a semiconductor memory such as a USB memory or an SSD, etc. The storage unit 207 or the external storage unit 124 is configured as a computer-readable recording medium. Hereinafter, they may also be collectively referred to as recording media. When the term recording medium is used in this specification, sometimes only the storage unit 207 monomer is included, sometimes only the external storage unit 124 monomer is included, or sometimes both of them are included. In addition, the program provision to the computer may also be carried out without using the external storage unit 124, but by using a communication method such as the Internet or a dedicated line.

[0087] (4) Substrate processing method

[0088] Next, a substrate processing method implemented using the substrate processing apparatus 1 is described. Here, a case where a substrate processing step, which is one of the steps in the manufacturing process of a semiconductor device, is implemented is taken as an example. Figure 1 As shown, the substrate processing apparatus 1 includes three wafer boats 21 (hereinafter referred to as “first wafer boat 21 a ”, “second wafer boat 21 b ”, and “third wafer boat 21 c ”) which are placed on the TR stage 5 and the ES stages 4B and 4C, respectively.

[0089] When a substrate processing step is performed, in the controller unit 200, first, a recipe corresponding to the substrate processing to be performed is read from the storage unit 207 and expanded in the RAM in the main control unit 201. Then, the main control unit 201 gives an action instruction to each control unit 202, 203, 204, and 205 via the process control unit 216 and the transport control unit 217. In this way, the substrate processing step performed is roughly divided into a transfer step, a loading step, a film forming step, a wafer boat transfer step, and a unloading step.

[0090] (Transfer process)

[0091] If the first wafer boat 21a placed on the TR stage 5 is an empty wafer boat, the main control unit 201 issues a driving instruction to the mechanical control unit 205 to the wafer transfer unit 11. Then, the wafer transfer unit 11 starts transferring the wafers 7 from the wafer cassette 50 on the transfer table 8 to the first wafer boat 21a on the TR stage 5 in accordance with the instruction from the mechanical control unit 205. The transfer process is performed until all the predetermined wafers 7 are loaded into the wafer boat 21.

[0092] (Loading process)

[0093] When a designated number of wafers 7 are loaded into the first wafer boat 21a on the TR stage 5, the first wafer boat 21a is transferred from the TR stage 5 to the BL stage 4A by the lower arm 31 of the wafer boat transfer mechanism 30 that operates according to the instruction from the mechanical control unit 205, and is transferred to the sealing cover 19 of the wafer boat elevator 20. Then, after the transfer of the first wafer boat 21a, the lower arm 31 returns to the TR stage 5.

[0094] Then, the first wafer boat 21a is lifted by the wafer boat elevator 20 operated according to the instruction from the mechanical control unit 205, and is carried into the processing chamber 101 formed in the inner tube 104 of the processing furnace 13. When the first wafer boat 21a is completely carried in, the sealing cover 19 of the wafer boat elevator 20 closes the lower end of the manifold 109 of the processing furnace 13 in an airtight manner.

[0095] At this time, the processing chamber 101 is purged by supplying N2 gas according to the instruction from the gas control unit 204. That is, by opening the valves 162c, 161c, 162d, 161d, the N2 gas supplied from the fourth gas supply source 173 to the gas supply pipes 132c, 132d is controlled to a predetermined flow rate by the MFCs 141c, 141d, and then supplied from the nozzles 130a, 130b to the processing chamber 101 via the gas supply pipes 132a, 132b. In addition, the supply of N2 gas to the processing chamber 101 will continue until all the substrate processing steps are completed.

[0096] (Film Forming Process)

[0097] Then, in the processing chamber 101, the vacuum exhaust device 146 performs vacuum exhaust to achieve a predetermined film forming pressure according to the instruction from the pressure control unit 203. In addition, in the processing chamber 101, the heater 106 heats the chamber to a predetermined temperature according to the instruction from the temperature control unit 202. Next, in accordance with the instruction from the mechanical control unit 205, the rotation of the first wafer boat 21a by the rotation mechanism 154 is started.

[0098] When the processing chamber 101 is maintained at a predetermined film forming temperature and a predetermined film forming pressure, the silicon-containing gas and the nitrogen-containing gas are supplied into the processing chamber 101 according to the instruction from the gas flow control unit 204. That is, the first gas supplied from the first gas supply source 171 into the gas supply pipe 132a by opening the valves 162a and 161a is controlled to a predetermined flow rate by the MFC 141a, and then supplied from the nozzle 130a into the processing chamber 101 through the gas supply pipe 132a. Furthermore, the second gas supplied from the second gas supply source 172 into the gas supply pipe 132b by opening the valves 162b and 161b is controlled to a predetermined flow rate by the MFC 141b, and then supplied from the nozzle 130b into the processing chamber 101 through the gas supply pipe 132b.

[0099] At this time, the N2 gas supplied into the processing chamber 101 functions as a dilution gas for diluting the film forming gas (the first gas and the second gas) or as a carrier gas for promoting diffusion into the processing chamber 101. By controlling the supply flow rate of the N2 gas, the concentration and diffusion rate of the film forming gas can be controlled.

[0100] When the film-forming gas passes through the processing chamber 101, it contacts the surface of the wafer 7. At this time, a thin film (hereinafter also referred to as a film) is deposited on the wafer 7 through a thermal CVD reaction. If a film of a predetermined thickness is formed after a predetermined processing time, valves 162a, 161a, 162b, and 161b are closed to stop supplying the film-forming gas to the processing chamber 101. The processing time in this specification refers to the time for continuing the processing. This is also the same in the following descriptions. Here, when a silicon-containing gas is used as the first gas and a nitrogen-containing gas is used as the second gas, a silicon nitride film is formed on the wafer 7.

[0101] Then, while keeping the valves 162c, 161c, 162d, and 161d open, the N2 gas is continuously supplied to the processing chamber 101, and the processing chamber 101 is exhausted, thereby purging the processing chamber 101. When the atmosphere in the processing chamber 101 is replaced with the N2 gas, the opening of the pressure regulating device 142 is adjusted to restore the pressure in the processing chamber 101 to normal pressure. In addition, the heater 106 is stopped from being powered, and the temperature in the processing chamber 101 is cooled to a predetermined temperature (wafer unloading temperature).

[0102] (Wafer boat transfer process)

[0103] During the film forming process on the first boat 21 a , the second boat 21 b or the third boat 21 c is transferred from the ES stage 4B or 4C to the TR stage 5 by the boat transfer mechanism 30 in accordance with an instruction from the mechanical control unit 205 .

[0104] At this time, if the second wafer boat 21b or the third wafer boat 21c transferred to the TR stage 5 is an empty wafer boat, the transfer process is performed on the second wafer boat 21b or the third wafer boat 21c. That is, the wafers 7 of the wafer box 50 on the transfer stage 8 are transferred to the second wafer boat 21b or the third wafer boat 21c on the TR stage 5 by the wafer transfer unit 11. However, in the case where the processed wafers 7 are held on the second wafer boat 21b or the third wafer boat 21c, after the processed wafers 7 are unloaded from the second wafer boat 21b or the third wafer boat 21c and transferred to the wafer box 50, new unprocessed wafers 7 are transferred to the second wafer boat 21b or the third wafer boat 21c.

[0105] (Carrying out process)

[0106] If the film forming process of the first wafer boat 21a is completed, the rotation of the first wafer boat 21a performed by the rotating mechanism 154 is stopped according to the instructions from the mechanical control unit 205, the sealing cover 19 is lowered by the wafer boat elevator 20 to open the lower end of the manifold 109, and the first wafer boat 21a holding the processed wafers 7 is moved out of the process tube 103.

[0107] Then, the first wafer boat 21a holding the processed wafers 7 is immediately transferred from the BL stage 4 to the ES stage 4B or ES stage 4C by the wafer boat transfer mechanism 30 in accordance with the instruction from the mechanical control unit 205. After the transfer, the first wafer boat 21a in a high temperature state placed on the ES stage 4B, 4C is extremely effectively cooled by the purge air 15 blown from the purge unit 3. Then, if it is cooled to, for example, below 150°C, the first wafer boat 21a is transferred from the ES stage 4B, 4C to the TR stage 5 by the wafer boat transfer mechanism 30. In addition, at this time, the transfer of the unprocessed wafers 7 to the second wafer boat 21b or the third wafer boat 21c on the TR stage 5 has been completed, and the loading of the second wafer boat 21b or the third wafer boat 21c into the processing chamber 101 has also been completed.

[0108] By repeating the above-described steps, the substrate processing apparatus 1 of the present embodiment can form a film on the wafer 7 with high throughput.

[0109] (5) Maintenance method of substrate processing device

[0110] The above-mentioned film forming process forms a film on the wafer 7, but in fact, the film is also formed on other surfaces besides the wafer 7, such as the inner wall of the inner tube 104 or the wafer boat 21. If the formed film is deposited thickly, the applied stress increases and cracks are generated, and sometimes foreign matter (particles) are generated in the processing chamber 101. Therefore, if the thickness of the film deposited in the process tube 103 reaches a predetermined thickness by repeating the above-mentioned film forming process, the substrate processing apparatus 1 of the present embodiment implements a cleaning process as described below as a maintenance process for maintaining the process tube 103, etc.

[0111] When the cleaning process is performed, the controller 200 first reads the maintenance recipe for the cleaning to be performed from the storage 207 and expands it in the RAM in the main control unit 201. Then, the main control unit 201 gives the cleaning process to the control units 202, 203, 204, and 205 with an operation instruction.

[0112] (Cleaning (CLN) process)

[0113] The cumulative value of the thickness of the deposit (the accumulated thin film) attached to the process tube 103 (the cumulative film thickness A0 (hereinafter referred to as film thickness A0)), the cumulative value of the thickness of the deposit attached to the first wafer boat 21a (the cumulative film thickness A1 (hereinafter referred to as film thickness A1)), the cumulative value of the thickness of the deposit attached to the second wafer boat 21b (the cumulative film thickness A2 (hereinafter referred to as film thickness A2)), and the cumulative value of the thickness of the deposit attached to the third wafer boat 21c (the cumulative film thickness A3 (hereinafter referred to as film thickness A3)) are respectively stored in the storage unit 207. The cumulative values ​​of the film thicknesses can be obtained based on the number of times the processing chamber 101 is used for the film forming process or the estimated film thickness value based on the use time and the like. In addition, it can also be a film thickness value detected by a film thickness detector (not shown) provided in the processing chamber 101.

[0114] The storage unit 207 stores a cumulative film thickness threshold THA (hereinafter referred to as threshold THA). The threshold THA is the film thickness before peeling, falling, or breaking occurs due to stress applied in a normal process, and is pre-defined by the user. The definition can be set by the user inputting from the operation unit 211. In addition, the storage unit 207 stores a CLN time T0 corresponding to the film thickness A0. The CLN time T0 is pre-set in consideration of the CLN time corresponding to the film thickness A0.

[0115] In addition, the threshold value THA may be acquired from another device connected via the network by the external communication unit 213 .

[0116] The storage process (storage step) of the film thickness A0-A4 in the storage unit 207 is performed by adding the film thickness A0 of the process tube 103 and the cumulative film thickness of the wafer boat to be processed (the wafer boat processed in the process chamber 101 among the first wafer boat 21a, the second wafer boat 21b, and the third wafer boat 21c) and the film thickness of the deposits attached during the substrate processing each time the substrate processing in the process chamber 101 is completed. In addition, after the CLN processing described later is performed, the film thickness A0 of the process tube 103 and the film thickness A of the wafer boat 21 subjected to the CLN processing are cleared.

[0117] The monitoring unit 220 has a function of monitoring the film thickness A0. Specifically, the film thickness monitoring process is performed each time the accumulated film thickness storage process is performed. In the film thickness monitoring process, Figure 5As shown in FIG. 1 , the film thickness A0 of the processing chamber 101 is obtained from the storage unit 207 (step S10), and the obtained film thickness A0 is compared with the threshold value THA (step S12). As a result of the comparison, when the obtained film thickness A0 is greater than the threshold value THA, in step S14, a notification information indicating that the time for performing CLN has arrived, that is, a CLN signal, is sent to the main control unit 201. As a result of the comparison, when the obtained film thickness A0 is less than the threshold value THA, the processing is terminated.

[0118] When the main control unit 201 receives the CLN signal indicating that the film thickness A0 is greater than the threshold value THA, it determines to start the CLN process. Figure 6 As shown, the calculation unit 222 is requested to execute the CLN time allocation process (step S16). In addition, the notification information is stored in the storage unit 207, and as the notification information, the display unit 212 is displayed to indicate that the time for performing CLN has arrived and to indicate that the CLN process is being performed (step S17). In addition, the display on the display unit 212 may be an alarm such as lighting of a mark, or may be a notification based on sound.

[0119] Furthermore, when the main control unit 201 receives a signal indicating that the film thickness A0 is greater than the threshold value THA, the main control unit 201 performs a removal process of the wafer 7 when there is a wafer 7 placed on the wafer boat 21 (step S18). When the wafer 7 is placed on the first wafer boat 21a, the removal process is performed before the CLN process described later or before step S51 in the CLN process (in the process of switching the temperature of the processing chamber 101 to the CLN temperature before the first wafer boat 21a is moved into the processing chamber 101). When the wafer 7 is placed on the second wafer boat 21b, the removal process can be performed in the CLN of the first wafer boat 21a in step S52, and when the wafer 7 is placed on the third wafer boat 21c, the removal process can be performed in the CLN of the second wafer boat 21b in step S55.

[0120] The calculation unit 222 executes the CLN time allocation process when receiving a request from the main control unit 201. Specifically, Figure 7As shown, in step S20, the film thickness A0 in the processing chamber 101 is obtained from the storage unit 207, and in step S21, the CLN time T0 corresponding to the film thickness A0 is obtained from the storage unit 207. Next, in step S22, the cumulative film thickness A (any one of A1, A2, A3: hereinafter referred to as film thickness A) for one wafer boat 21 is obtained from the storage unit 207. Then, in step S23, the CLN time (any one of T1, T2, T3) for the wafer boat is calculated. The CLN time is calculated by allocating the CLN time T0 corresponding to the obtained film thickness A0 to the time corresponding to the film thickness A of the wafer boat 21. Specifically, the CLN time T0 is multiplied by the film thickness A / film thickness A0 and calculated in a manner proportional to the film thickness A of the wafer boat 21.

[0121] In step S24, it is determined whether the calculation of the CLN time has been completed for all wafer boats 21. If there is a wafer boat 21 for which the calculation of the CLN time has not been completed, the process returns to step S22 and the above steps S23 and S24 are repeated. When the calculation of the CLN time has been completed for all wafer boats 21, in step S25, the allocation result is sent to the main control unit 201, and the CLN time allocation process is completed.

[0122] Figure 8 : is a table showing a specific example of the allocation of CLN time. The threshold value THA is set to 10μm. The film thickness A0 of the process tube 103 (processing container) stored in the storage unit 207 is 10μm, the film thickness A1 of the first wafer boat 21a is 5μm, the film thickness A2 of the second wafer boat 21b is 3μm, and the film thickness A3 of the third wafer boat 21c is 2μm. Since the wafer boats 21 processed using the processing chamber 101 are only these wafer boats, the film thickness A0 of the process tube 103 is the total of these wafer boats 21. For these wafer boats 21, the CLN time T0 of the process tube 103 is allocated in proportion to the film thickness. Since the film thickness A0 is 10μm, the CLN time T0 of the process tube 103 is 100min (pre-set). Therefore, the CLN time T1 of the first wafer boat 21a is 50 minutes, the CLN time T2 of the second wafer boat 21b is 30 minutes, and the CLN time T3 of the third wafer boat 21c is 20 minutes. That is, the CLN time T0 is equal to the CLN time which is the sum of the CLN time T1, CLN time T2, and CLN time T3.

[0123] When the main control unit 201 receives the allocation result from the calculation unit 222, the CLN process is executed. Fig. 9As shown in FIG. 1 , in the CLN process, in step S50, the temperature in the process chamber 101 is switched to the CLN temperature. In step S51, it is determined whether the CLN time T1 for the first wafer boat 21a is greater than zero. If the determination is yes, in step S52, the first wafer boat 21a is moved into the process chamber 101. In step S53, CLN of the first wafer boat 21a is performed (see FIG. 1 ). Fig.10 ).

[0124] When the determination in step S51 is negative, the CLN time T1 allocated to the first wafer boat 21 a is zero, and since the film thickness A1 is zero, the process is not performed in the process chamber 101. Therefore, steps S52 to S54 are skipped.

[0125] In the CLN of step S53, a pre-set CLN recipe such as gas cleaning or purge cleaning is implemented. Fig.10 As shown in (A) in FIG. 8 , the recipe is executed in a state where the first wafer boat 21 a is loaded into the process tube 103 .

[0126] As an example, during gas cleaning, CLN gas is supplied into the processing chamber 101. By opening valves 162e, 161e, 162f, 161f, the third gas supplied from the third gas supply source 174 into the gas supply pipes 132e, 132f is controlled to a predetermined flow rate by the MFCs 141e, 141f, and then supplied into the processing chamber 101 from the nozzles 130a, 130b via the gas supply pipes 132a, 132b.

[0127] At this time, the N2 gas supplied into the processing chamber 101 functions as a diluent gas for diluting the CLN gas, i.e., the F-containing gas, or as a carrier gas for promoting diffusion into the processing chamber 101. By controlling the supply flow rate of the N2 gas, the concentration or diffusion rate of the F-containing gas can be controlled.

[0128] When the F-containing gas passes through the processing chamber 101, it contacts the film etc. accumulated in the processing chamber 101 or the first wafer boat 21a, and removes the film etc. by a thermochemical reaction. That is, the F-containing gas activated by heating becomes an etching species, and etches and removes the film etc. accumulated in the processing chamber 101 and the first wafer boat 21a.

[0129] When the CLN time T1 allocated to the first wafer boat 21a has passed, the valves 162c, 161c, 162d, and 161d are closed to stop supplying the F-containing gas into the processing chamber 101. Then, while the valves 162c, 161c, 162d, and 161d are kept open, the processing chamber 101 is exhausted while continuing to supply the N2 gas into the processing chamber 101, thereby purging the processing chamber 101. Then, in step S54, the first wafer boat 21a is unloaded from the processing chamber 101.

[0130] Next, in step S55, it is determined whether the CLN time T2 for the second wafer boat 21b is greater than zero. If the determination is affirmative, in step S56, the second wafer boat 21b is moved into the processing chamber 101. In step S57, the CLN of the second wafer boat 21b is performed (refer to Fig.10 (B) in FIG. 1 ). The CLN of the second wafer boat 21 b is performed in the same manner as the first wafer boat 21 a , and the CLN time is executed at the CLN time T2 allocated to the second wafer boat 21 b . Then, in step S58 , the second wafer boat 21 b is unloaded from the processing chamber 101 .

[0131] When the determination in step S55 is negative, the time T2 allocated to the second wafer boat 21 b is zero and the film thickness A2 is zero, so the process in the process chamber 101 is not performed. Therefore, steps S56 to S58 are skipped.

[0132] Next, in step S59, it is determined whether the CLN time T3 for the third wafer boat 21c is greater than zero. If the determination is affirmative, in step S60, the third wafer boat 21c is moved into the processing chamber 101. In step S61, the CLN of the third wafer boat 21c is performed (refer to Fig.10 (C) in FIG. 1 ). The CLN of the third wafer boat 21 c is performed in the same manner as the first wafer boat 21 a , and the CLN time is executed at the CLN time T3 allocated to the third wafer boat 21 c . Then, in step S62 , the third wafer boat 21 c is unloaded from the processing chamber 101 .

[0133] When the determination in step S59 is negative, the CLN time T3 allocated to the third wafer boat 21 c is zero and the film thickness A3 is zero, so the process is not performed in the process chamber 101. Therefore, steps S60 to S62 are skipped.

[0134] Then, in step S63 , the temperature in the processing chamber 101 is switched to the processing temperature. In step S64 , the film thickness A0 of the processing chamber 101 and the film thickness A of the wafer boat 21 subjected to the CLN processing stored in the storage unit 207 are cleared to terminate the CLN processing.

[0135] (Effects of this embodiment)

[0136] According to this embodiment, one or more of the following effects can be obtained.

[0137] (a) In the present embodiment, the CLN process is performed on the plurality of wafer boats 21 (the first wafer boat 21a, the second wafer boat 21b, and the third wafer boat 21c) at the same timing as the CLN process of the process tube 103. Therefore, the time for the CLN process is reduced, including the time for preparing the temperature or atmosphere of the process chamber 101, compared with the case where the CLN process of the process tube 103 and the CLN process of each wafer boat 21 are performed separately.

[0138] (b) In this embodiment, the CLN time T0 of the process tube 103 is allocated to each wafer boat 21 according to the film thickness A, and each wafer boat 21 is brought into and out of the processing chamber 101 in accordance with the allocated CLN time, and the CLN process is performed. Therefore, the remaining film thickness after one CLN process can be made uniform. In addition, by allocating the CLN time T0 in proportion to the film thickness A, a CLN time corresponding to the film thickness A can be set.

[0139] (c) In the present embodiment, since the threshold THA is stored in the storage unit 207, and the film thickness A0, film thickness A1, film thickness A2, and film thickness A3 are updated and stored for each substrate processing, the information on the film thickness can be maintained even when the substrate processing apparatus 1 is restarted. Furthermore, after the CLN processing is completed, the accumulated film thickness stored in the storage unit 207 is cleared to maintain the latest accumulated film thickness. The same is true for the notification information.

[0140] (d) In the present embodiment, the threshold value THA can be set by input from the operation unit 211, so the threshold value THA can be appropriately changed according to substrate processing conditions and the like.

[0141] (e) In this embodiment, the monitoring unit 220 performs the film thickness monitoring process every time the substrate processing (film forming process) in the processing chamber 101 is completed. Therefore, the latest film thickness A can be compared with the threshold value THA.

[0142] (f) In this embodiment, the CLN time is calculated when a signal indicating that the cumulative film thickness A0 is equal to or greater than the threshold value THA is received from the monitoring unit 220. Therefore, the CLN time is calculated only when CLN is performed, and the CLN calculation time can be reduced.

[0143] (g) In the present embodiment, as notification information, a display indicating that the CLN time has arrived and a display indicating that the CLN process has been executed are displayed on the display unit 212. Therefore, the CLN-related information can be clearly visually indicated to the user.

[0144] (h) In the present embodiment, before the CLN process is performed, when the wafer 7 is placed on the wafer boat 21, the wafer 7 is removed. The removal is performed at the time when the temperature of the processing chamber 101 is switched or when the CLN process is performed on other wafer boats 21, so the removal time can be absorbed in other processes.

[0145] (i) In the present embodiment, when the CLN process starts, the CLN process such as loading the wafer boat 21 into the process chamber 101 is skipped for the wafer boat 21 whose film thickness A is zero. Therefore, the overall CLN process time can be shortened.

[0146] When a plurality of wafer boats 21 are used for one processing container, the thickness of the accumulated film may be different on each wafer boat 21. In this case as well, cleaning for removing the accumulated film can be performed efficiently.

[0147] As mentioned above, although embodiment of this disclosure was specifically described, this disclosure is not limited to the said embodiment, Various changes can be implemented in the range which does not deviate from the summary.

[0148] For example, in the above-mentioned embodiments of the present disclosure, the substrate to be processed is a semiconductor wafer substrate, but the present disclosure is not limited to this and can also be applied to substrate processing devices for processing glass substrates of LCD (Liquid Crystal Display) devices, etc.

[0149] In addition, for example, in the above-mentioned embodiment of the present disclosure, Si-based film formation is cited as an example of the process performed by the substrate processing device 1, but the present disclosure is not limited to this. That is, it can also be a process of forming an oxide film, a nitride film, and a process of forming a film containing a metal. In addition, regardless of the specific content of the substrate processing, not only film formation processing, but also other substrate processing such as annealing, oxidation, nitridation, diffusion, and photolithography can be applied. Furthermore, the present disclosure can also be appropriately applied to other substrate processing devices, such as annealing devices, oxidation devices, nitridation devices, exposure devices, coating devices, drying devices, heating devices, CVD devices using plasma, and other substrate processing devices. The same effects as those of the above-mentioned embodiment can also be achieved in these modified examples.

[0150] In addition, for example, in the above-mentioned embodiments of the present disclosure, an example of forming a film using a batch-type substrate processing device that processes multiple substrates is described at once. However, the present disclosure is not limited to the above-mentioned embodiments, and for example, it can also be applied to the case where a film is formed using a single-piece substrate processing device that processes one or more substrates at a time. In addition, in the above-mentioned embodiments of the present disclosure, an example of forming a film using a substrate processing device having a hot-wall type processing furnace is described. However, the present disclosure is not limited to the above-mentioned embodiments, and it can also be applied to the case where a film is formed using a substrate processing device having a cold-wall type processing furnace.

[0151] Even when these substrate processing apparatuses are used, each process can be performed under the same processing procedures and processing conditions as those of the above-mentioned embodiment or modification of the present disclosure, and the same effects as those of the above-mentioned embodiment or modification can be obtained.

[0152] The above-mentioned embodiments or modified examples may be used in combination as appropriate. The processing procedure and processing conditions in this case may be, for example, the same as those of the above-mentioned embodiments or modified examples.

[0153] The disclosure of Japanese Patent Application No. 2022-194510 filed on December 5, 2022 is incorporated herein by reference in its entirety. All documents, patent applications, and technical specifications described in this specification are incorporated herein by reference to the same extent as if each document, patent application, and technical specification were specifically and separately described as being incorporated by reference.

[0154] Description of Reference Numerals

[0155] 1 substrate processing apparatus, 21 substrate support, 103 processing container, 200 control unit, 207 storage unit.

Claims

1. A substrate processing device, characterized in that: have: a substrate support capable of supporting at least one substrate; a processing container into which the plurality of substrate supports are respectively carried and processes the substrates supported by the substrate supports; a storage unit storing an accumulated value of the film thickness of each of the processing container and the plurality of substrate supports; A control unit is configured to control the pre-defined cleaning time of the processing container to be allocated to each substrate support according to the cumulative value of the substrate support when the cumulative value of the processing container becomes above a pre-defined threshold value, and to move the substrate support into and out of the processing container in accordance with the allocated cleaning time of each substrate support, and to perform cleaning processing of the processing container and the substrate support.

2. The substrate processing device according to claim 1, characterized in that: The cleaning time of each of the plurality of substrate supports is proportional to an accumulated value of the substrate supports.

3. The substrate processing device according to claim 1, characterized in that: The substrate processing apparatus includes: a monitoring unit that monitors the accumulated value of the processing container; If the cumulative value is equal to or greater than the threshold value, the monitoring unit sends a cleaning signal to the control unit.

4. The substrate processing device according to claim 3, characterized in that: The substrate processing apparatus comprises: an operation unit capable of setting the threshold value of the processing container; The monitoring unit compares the set threshold value with the cumulative value of the processing container.

5. The substrate processing device according to claim 3, characterized in that: The monitoring unit determines whether the cumulative value of the processing container is equal to or greater than the threshold value when processing of the substrate is completed.

6. The substrate processing apparatus according to claim 1, wherein: The substrate processing apparatus includes: a calculation unit that calculates the cleaning time of each of the substrate supports; When determining to start a cleaning process, the control unit requests the calculation unit to calculate the cleaning time for each of the substrate supports.

7. The substrate processing device according to claim 6, characterized in that: The calculation unit calculates the cleaning time of each of the substrate supports based on the cleaning time of the processing container and the accumulated value of the substrate supports.

8. The substrate processing device according to claim 6, characterized in that: The control unit controls execution of the cleaning process based on the calculation result of the calculation unit.

9. The substrate processing apparatus according to claim 1, wherein: The control unit is configured to control the processing container to notify the accumulated value as notification information when the accumulated value exceeds the threshold value.

10. The substrate processing apparatus according to claim 9, wherein: The storage unit is capable of storing the notification information.

11. The substrate processing apparatus according to claim 9, wherein: The substrate processing apparatus includes a display unit capable of displaying the notification information, and the notification information is displayed on the display unit in accordance with the notification.

12. The substrate processing apparatus according to claim 1, wherein: When the cleaning process is executed, the control unit removes the substrate before carrying the substrate support into the processing container when the substrate is supported by the substrate support.

13. The substrate processing apparatus according to claim 1, wherein: After the cleaning process is completed, the storage unit clears the accumulated value stored in the storage unit.

14. The substrate processing apparatus according to claim 13, wherein: The accumulated value is cleared by the processing container and the substrate support that have been subjected to the cleaning process.

15. The substrate processing apparatus according to claim 1, wherein: When the control unit performs the cleaning process, if the accumulated value of the substrate support is not changed after being cleared, the control unit skips the cleaning process of the corresponding substrate support.

16. A method for manufacturing a semiconductor device, characterized in that: have: a substrate supporting step of supporting the substrate on a substrate supporting member capable of supporting at least one substrate; A substrate processing step of moving the plurality of substrate supports into processing containers for performing processing of the substrates, respectively, and performing processing of the substrates; A storage step of storing the accumulated value of the film thickness of the processing container; a storing step of storing the accumulated values ​​of the film thickness of each of the plurality of substrate supports; In a cleaning process, when the accumulated value of the processing container becomes above a predefined threshold value, the predefined cleaning time of the processing container is allocated to each substrate support according to the accumulated value of the substrate support, and the substrate support is moved in and out of the processing container in accordance with the allocated cleaning time of each substrate support, thereby performing cleaning processing of the processing container and the substrate support.

17. A program, characterized in that The computer enables the substrate processing device to perform the following process: A substrate supporting process, supporting the substrate on a substrate supporting member capable of supporting at least one substrate; In a substrate processing process, the plurality of substrate supports are respectively moved into a processing container for performing processing of the substrate, and the processing of the substrate is performed; A storage process for storing the accumulated value of the film thickness of the processing container; a storing process for storing the accumulated values ​​of the film thickness of each of the plurality of substrate supports; In the cleaning process, when the accumulated value of the processing container becomes above a predefined threshold value, the predefined cleaning time of the processing container is allocated to each substrate support according to the accumulated value of the substrate support, and the substrate support is moved in and out of the processing container in accordance with the allocated cleaning time of each substrate support, thereby performing cleaning processing of the processing container and the substrate support.

Images