Object stage

Abstract

The stage includes: a first metal plate including a first groove; a second metal plate below the first metal plate and including a through hole; a third metal plate below the second metal plate and including a second groove; a heat insulation part in which the first groove, the through hole, and the second groove communicate with each other; a first circulation path and a first heater provided in one of the first metal plate, the second metal plate, and the third metal plate; and at least one of a second circulation path and a second heater, the first circulation path and the second circulation path being provided in a first region bounded by the heat insulating portion, and the first heater and the second heater being provided in a second region opposite to the first region bounded by the heat insulating portion.

Description

Technical Field

[0001] One embodiment of the present invention relates to a stage for placing a wafer or the like. Background Art

[0002] In a semiconductor device for manufacturing semiconductors, a stage for placing a wafer is provided. From the perspective of the degree of freedom in configuring a heater, contamination, and heat resistance, ceramics are generally used as the stage. For example, as a stage using ceramics, Patent Document 1 discloses a ceramic plate having a temperature gradient distribution in which the temperature of the inner peripheral region and the temperature of the outer peripheral region are different by controlling the heater elements of the inner peripheral region and the heater elements of the outer peripheral region respectively. In the ceramic plate disclosed in Patent Document 1, the temperature increases from the inner peripheral region to the outer peripheral region, and a temperature gradient distribution in which the temperature difference between the inner peripheral region and the outer peripheral region is about 10°C can be achieved.

[0003] (Prior art literature)

[0004] (Patent Document)

[0005] Patent Document 1: International Publication No. 2018 / 030433 Summary of the invention

[0006] (Problems to be solved by the invention)

[0007] In recent years, there is a demand for a greater temperature difference between the inner and outer areas of a stage. However, in a stage using ceramics, if the temperature difference between the inner and outer areas is 10° C. or more, the stage may be damaged.

[0008] In view of the above problems, one of the objects of one embodiment of the present invention is to provide a stage capable of achieving a temperature gradient distribution with a large temperature difference between an inner area and an outer area.

[0009] (Measures taken to solve the problem)

[0010] According to one embodiment of the present invention, a stage includes: a first metal plate including a first groove; a second metal plate located below the first metal plate and including a through hole; a third metal plate located below the second metal plate and including a second groove; an insulating portion, wherein the first groove, the through hole and the second groove are interconnected; a first circulation path and a first heater arranged on one of the first metal plate, the second metal plate and the third metal plate; and at least one of the second circulation path and the second heater, wherein the first circulation path and the second circulation path are arranged in a first area bounded by the insulating portion, and the first heater and the second heater are arranged in a second area opposite to the first area bounded by the insulating portion.

[0011] The first region may be a region surrounded by the heat insulating portion. The second region may be a region surrounded by the heat insulating portion.

[0012] The second heater may be disposed on a metal plate used to dispose the first heater. One of the two adjacent metal plates may be a metal plate used to dispose the first heater, and the second circulation path may be disposed on the other of the two adjacent metal plates. One of the two separated metal plates may be a metal plate used to dispose the first heater, and the second circulation path may be disposed on the other of the two separated metal plates.

[0013] One of the two adjacent metal plates may be a metal plate for setting the first heater, and the second heater may be set on the other metal plate of the two adjacent metal plates. The second circulation path may be set on the other metal plate of the two adjacent metal plates. The second circulation path may be set on a metal plate different from the two adjacent metal plates.

[0014] One of the two separated metal plates may be a metal plate for setting the first heater, and the second heater may be set on the other metal plate of the two separated metal plates. The second circulation path may be set on the other metal plate of the two separated metal plates. The second circulation path may be set on a metal plate different from the two separated metal plates.

[0015] The cross-sectional diameter of the second heater may also be different from the cross-sectional diameter of the first heater.

[0016] The first heater and the second heater may be electrically insulated from each other.

[0017] In addition, a stage according to one embodiment of the present invention includes: a first metal plate including a first groove; a second metal plate located below the first metal plate and including a through hole; a third metal plate located below the second metal plate and including a second groove; an insulating portion, wherein the first groove, the through hole and the second groove are interconnected; a first circulation path arranged on one of the first metal plate, the second metal plate and the third metal plate; a first heater arranged on another metal plate different from the one metal plate; and at least one of a second circulation path and a second heater arranged on a metal plate different from the one metal plate and the other metal plate, wherein the first circulation path and the second circulation path are arranged in a first area bounded by the insulating portion, and the first heater and the second heater are arranged in a second area opposite to the first area bounded by the insulating portion.

[0018] A metal plate may be adjacent to another metal plate.

[0019] One metal plate may be spaced apart from another metal plate.

[0020] The temperature difference between the lowest surface temperature and the highest surface temperature of the first metal plate may be 20° C. or more.

[0021] (Effects of the Invention)

[0022] The stage according to one embodiment of the present invention can realize a temperature gradient distribution with a large temperature difference between the inner area and the outer area. Therefore, even when the temperature of the inner area or the outer area of ​​the wafer placed on the stage drops significantly, the temperature of the inner area or the outer area of ​​the wafer can be compensated to make the temperature distribution in the wafer uniform. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 It is a schematic perspective view showing the structure of a stage according to one embodiment of the present invention.

[0024] Figure 2 It is a schematic plan view showing the structure of a stage according to one embodiment of the present invention.

[0025] Figure 3 This is a schematic cross-sectional view showing the structure of a stage according to one embodiment of the present invention.

[0026] Figure 4A It is a schematic plan view showing the structure of a circulating flow path of a stage according to one embodiment of the present invention.

[0027] Figure 4B It is a schematic plan view showing the structure of a circulating flow path of a stage according to one embodiment of the present invention.

[0028] Figure 5 This is a schematic cross-sectional view showing the structure of a plate portion of a stage according to one embodiment of the present invention.

[0029] Figure 6 It is a schematic plan view showing the structure of the second metal plate of the stage according to one embodiment of the present invention.

[0030] Figure 7 It is a schematic plan view showing the structure of the second metal plate of the stage according to one embodiment of the present invention.

[0031] Figure 8 This is a graph illustrating the temperature gradient distribution of the stage according to one embodiment of the present invention.

[0032] Fig. 9 This is a schematic cross-sectional view showing the structure of a plate portion of a stage according to one embodiment of the present invention.

[0033] Fig.10This is a schematic cross-sectional view showing the structure of a plate portion of a stage according to one embodiment of the present invention.

[0034] Fig.11 This is a schematic cross-sectional view showing the structure of a plate portion of a stage according to one embodiment of the present invention.

[0035] Fig.12 This is a schematic cross-sectional view showing the structure of a plate portion of a stage according to one embodiment of the present invention.

[0036] Fig.13 This is a schematic cross-sectional view showing the structure of a plate portion of a stage according to one embodiment of the present invention.

[0037] Fig.14 This is a schematic cross-sectional view showing the structure of a plate portion of a stage according to one embodiment of the present invention.

[0038] Fig.15 This is a schematic cross-sectional view showing the structure of a plate portion of a stage according to one embodiment of the present invention.

[0039] Fig.16 This is a schematic cross-sectional view showing the structure of a plate portion of a stage according to one embodiment of the present invention.

[0040] Fig.17 This is a schematic cross-sectional view showing the structure of a plate portion of a stage according to one embodiment of the present invention.

[0041] Fig.18 This is a schematic cross-sectional view showing the structure of a plate portion of a stage according to one embodiment of the present invention.

[0042] Fig.19 This is a schematic cross-sectional view showing the structure of a plate portion of a stage according to one embodiment of the present invention.

[0043] Fig. 20 This is a schematic cross-sectional view showing the structure of a plate portion of a stage according to one embodiment of the present invention.

[0044] Fig.21 This is a schematic cross-sectional view showing the structure of a plate portion of a stage according to one embodiment of the present invention.

[0045] Fig. 22 This is a schematic cross-sectional view showing the structure of a plate portion of a stage according to one embodiment of the present invention.

[0046] Fig.23 This is a graph illustrating the temperature gradient distribution of the stage according to one embodiment of the present invention.

[0047] Fig.24 This is a schematic cross-sectional view showing the structure of a plate portion of a stage according to one embodiment of the present invention.

[0048] Fig.25 This is a schematic cross-sectional view showing the structure of a plate portion of a stage according to one embodiment of the present invention.

[0049] Fig.26 This is a schematic cross-sectional view showing the structure of an etching device according to one embodiment of the present invention.

[0050] Fig. 27 This is a schematic cross-sectional view showing the structure of a CVD apparatus according to one embodiment of the present invention.

[0051] Fig.28 It is a schematic cross-sectional view showing the structure of a sputtering device according to one embodiment of the present invention.

[0052] Fig.29 This is a schematic cross-sectional view showing the structure of a vapor deposition device according to one embodiment of the present invention. DETAILED DESCRIPTION

[0053] Hereinafter, each embodiment of the invention disclosed in the present application will be described with reference to the accompanying drawings. However, the present invention can be implemented in various forms without departing from the gist thereof, and should not be construed as being limited to the description of the embodiments illustrated below.

[0054] For a clearer description, the drawings may schematically show the width, thickness, shape, etc. of each part compared to the actual form, but this is only an example and does not limit the interpretation of the present invention. In addition, in this specification and the drawings, elements having the same functions as those described with reference to the drawings already shown may be shown with the same reference numerals, and their repeated description may be omitted. In addition, for ease of description, the words "above" or "below" are used for description, but "above" or "below" respectively indicate the direction when the stage is used (when the wafer is placed).

[0055] In this specification and drawings, the same reference numerals are used to represent the same or similar multiple structural elements in general, and capital letters are added to distinguish each of the multiple structural elements. When distinguishing multiple parts of a structural element, the same reference numerals are used and hyphens and natural numbers are also used.

[0056] In this specification, the "inner area" of the stage refers to the inner area surrounded by the heat insulation part and the area overlapping with this area. In addition, in this specification, the "outer area" of the stage refers to the area outside the inner area. That is, the "outer area" is the area on the outer peripheral side of the stage. Note that in this specification, the terms "inner area" and "outer area" are used not only for the stage but also for the wafer, but the "inner area" and "outer area" of the wafer refer to the areas overlapping with the "inner area" and "outer area" of the stage, respectively, when the wafer is placed on the stage.

[0057] <First Embodiment>

[0058] Reference Figures 1 to 8 , a stage 10 according to an embodiment of the present invention will be described.

[0059] Figure 1 It is a schematic perspective view showing the structure of the stage 10 according to one embodiment of the present invention. Figure 2 1 is a schematic plan view showing the structure of a stage 10 according to an embodiment of the present invention. Figure 2 In FIG. 1 , a circulation path 112 described later is indicated by a dotted line. Figure 3 1 is a cross-sectional view showing the structure of a stage 10 according to an embodiment of the present invention. Specifically, Figure 3 is shown along Figure 2 The cross-sectional view is a cross-sectional view of a portion of the stage 10 cut along the line A1 - A2 shown. Figure 4A and Figure 4B Each of them is a schematic cross-sectional view showing the structure of the circulation path 112 of the stage 10 according to one embodiment of the present invention.

[0060] like Figure 1 As shown, the stage 10 includes a plate portion 100 and a shaft portion 200. On the stage 10, a wafer is placed on a first surface 101 of the plate portion 100. The shaft portion 200 is connected to a second surface 102 of the plate portion 100 opposite to the first surface 101.

[0061] As the wafer placed on the stage 10, for example, silicon (Si), silicon carbide (SiC), sapphire, quartz, glass, gallium phosphide (GaP), gallium arsenide (GaAs), indium phosphide (InP) or gallium nitride (GaN) can be used, but it is not limited thereto. As described above, since the wafer is placed on the first surface 101 of the plate portion 100, a height difference for guiding the placed wafer can also be provided on the first surface 101.

[0062] The plate portion 100 includes a first metal plate 110, a second metal plate 120, a third metal plate 130, and a fourth metal plate 140. The first metal plate 110 to the fourth metal plate 140 are stacked in this order. That is, the second metal plate 120 is located below the first metal plate 110, the third metal plate 130 is located below the second metal plate 120, and the fourth metal plate 140 is located below the third metal plate 130.

[0063] The first metal plate 110 and the second metal plate 120, the second metal plate 120 and the third metal plate 130, and the third metal plate 130 and the fourth metal plate 140 are connected to each other by welding, screwing, solid phase diffusion bonding, brazing, etc. As the brazing filler metal, for example, an alloy containing silver, copper and zinc, an alloy containing copper and zinc, copper containing a trace amount of phosphorus, an alloy containing aluminum, an alloy containing titanium, copper and nickel, an alloy containing titanium, zirconium and copper, or an alloy containing titanium, zirconium, copper and nickel can be used.

[0064] like Figure 2 As shown, when viewed from above, the first metal plate 110 has a circular shape. The second metal plate 120 to the fourth metal plate 140 overlapping the first metal plate 110 also have a circular shape. However, the shapes of the first metal plate 110 to the fourth metal plate 140 are not limited to circular shapes. The shapes of the first metal plate 110 to the fourth metal plate 140 can be appropriately determined according to the shape of the wafer, and the first metal plate 110 to the fourth metal plate 140 can also have an elliptical shape or a polygonal shape.

[0065] In addition, the thicknesses of the first metal plate 110 to the fourth metal plate 140 may be the same or different.

[0066] As the material of the first metal plate 110 to the fourth metal plate 140, for example, metals such as aluminum, titanium, iron, copper, nickel, molybdenum, tungsten, or gold, or alloys containing these metals can be used. Iron-containing alloys include, for example, stainless steel, Kovar alloy, 42 alloy, etc. In addition, nickel-containing alloys include, for example, Inconel or Hastelloy corrosion-resistant nickel-based alloys, etc. As described below, the first metal plate 110 is provided with a loop 112 and a heater 113 for circulating a cooling medium. The surface of the first metal plate 110 is equivalent to the first surface 101 of the plate portion 100, and the wafer is placed on the surface of the first metal plate 110. Therefore, in order to efficiently conduct the heat emitted by the heater 113 to the wafer and to efficiently absorb the heat from the cooling medium circulating in the loop 112, the first metal plate 110 preferably uses a material with high thermal conductivity. For example, as the material of the first metal plate 110, a metal or alloy with a thermal conductivity of more than 200W / mK and less than 430W / mK can be used. In addition, the first metal plate 110 to the fourth metal plate 140 may be made of the same material or different materials. In the case where the first metal plate 110 to the fourth metal plate 140 are different, preferably, the metal or alloy contained in the first metal plate 110 to the fourth metal plate 140 has a 5×10 -6 / K or above and 25×10 -6 In addition, preferably, the materials of the two adjacent metal plates are selected so that the difference in their thermal expansion coefficients is 10×10 -6 / K or less. Thus, deformation of the stage 10 due to the difference in thermal expansion is suppressed, and thus the reliability of the stage 10 can be improved.

[0067] like Figure 3 As shown, the first metal plate 110 includes a circulation path 112 and a heater 113. The circulation path 112 and the heater 113 are arranged on the second metal plate 120 side of the first metal plate 110 and are blocked by the second metal plate 120. In addition, the circulation path 112 is arranged in the inner area of ​​the plate portion 100, and the heater 113 is arranged in the outer area of ​​the plate portion 100.

[0068] In addition, the second metal plate 120 includes a circulation path 122 and a heater 123. The circulation path 122 and the heater 123 are provided on the third metal plate 130 side of the second metal plate 120 and are blocked by the third metal plate 130. In addition, the circulation path 122 is provided in the inner area of ​​the plate portion 100, and the heater 123 is provided in the outer area of ​​the plate portion 100.

[0069] When viewed from a plan view, the circulation path 112 overlaps with the circulation path 122. In addition, when viewed from a plan view, the heater 113 overlaps with the heater 123.

[0070] A cooling medium such as liquid water or gas is introduced into the circulation path 112 from the inlet 112a, flows widely in the first metal plate 110 along the circulation path 112, and then is discharged to the outside of the first metal plate 110 from the outlet 112b (see Figure 2 The circulation path 112 may be a structure directly formed on the first metal plate 110, or a structure in which a tubular member is arranged in a groove provided in the first metal plate 110.

[0071] When viewed from a plan view, Figure 2 The annular flow path 112 shown in FIG. 1 has a smooth curved shape (ie, the side of the annular flow path 112 has a smooth curved surface), but the structure of the annular flow path 112 is not limited thereto. Figure 4A As shown, when viewed from a plan view, the annular flow path 112 may have a sawtooth shape. Figure 4B As shown, the circulation path 112 may have a concave-convex shape when viewed from a plan view. That is, the width of the circulation path 112 may vary in the circumferential direction instead of being constant.

[0072] The loop path 122 has the same structure as the loop path 112. However, the shape of the loop path 112 and the shape of the loop path 122 may be different. In addition, the conditions (e.g., type, temperature, or flow rate, etc.) of the cooling medium flowing in the loop path 112 may be the same as or different from the conditions of the cooling medium flowing in the loop path 122. That is, the loop path 112 and the loop path 122 may independently control the conditions of the cooling medium.

[0073] The heater 113 is driven under the control of a control device (not shown). The heater 113 is composed of, for example, a heating wire and is arranged along the outer periphery of the first metal plate 110. The heater 113 may be buried in the first metal plate 110 or may be arranged in a groove provided in the first metal plate 110. For example, the heater 113 may be arranged in the groove of the first metal plate 110 and then covered with a thermal spray film or the like, thereby, the heater 113 may be provided on the first metal plate 110. The heater 113 heats the outer area of ​​the wafer through the first metal plate 110.

[0074] The heater 123 has the same structure as the heater 113. However, the heater 123 may be different from the heater 113 in kind, cross-sectional diameter, power density, etc. In addition, the heater 123 may be controlled independently of the heater 113. That is, the heater 113 and the heater 123 are electrically insulated from each other.

[0075] In the plate portion 100, a heat insulating portion 150 is provided between the circulation path 112 arranged in the inner region of the first metal plate 110 (or the circulation path 122 arranged in the inner region of the second metal plate 120) and the heater 113 arranged in the outer region of the first metal plate 110 (or the heater 123 arranged in the outer region of the second metal plate 120). Figures 5 to 7 The structure of the plate portion 100 will be described.

[0076] Figure 5 1 is a schematic cross-sectional view showing the structure of the plate portion 100 of the stage 10 according to one embodiment of the present invention. Figure 6 and Figure 7 Each of them is a schematic plan view showing the structure of the second metal plate 120 of the stage 10 according to one embodiment of the present invention. Specifically, Figure 6 and Figure 7 Each of them is a top view showing the second metal plate 120 .

[0077] like Figure 5 As shown, the heat insulating part 150 includes a first groove 111 formed in the first metal plate 110, a through hole 121 formed in the second metal plate 120, and a second groove 131 formed in the third metal plate 130. The first groove 111, the through hole 121, and the second groove 131 overlap each other. The first groove 111 has an opening surface on the second metal plate 120 side. The through hole 121 penetrates the second metal plate 120 and has opening surfaces on the first metal plate 110 side and the third metal plate 130 side. The second groove 131 has an opening surface on the second metal plate 120 side. The opening surface of the first groove 111 is substantially consistent with the opening surface of one end of the through hole 121, and the opening surface of the second groove 131 is substantially consistent with the opening surface of the other end of the through hole 121. That is, the heat insulating part 150 has a structure in which the first groove 111, the through hole 121, and the second groove 131 are connected to each other. In other words, the heat insulating portion 150 has a closed space that passes through the second metal plate 120 and has an upper surface formed on the first metal plate 110 and a bottom surface formed on the third metal plate. The interior of the heat insulating portion 150 may be a vacuum, or may be filled with a liquid or a gas. In addition, the interior of the heat insulating portion 150 may be connected to an external vacuum pump or the like, and the pressure, temperature or gas flow rate may be adjusted. As a gas filled in the heat insulating portion 150 or circulated in the heat insulating portion 150, an inert gas such as helium, argon or nitrogen may be used. In addition, the heat insulating portion 150 may be filled with an insulating material.

[0078] When viewed from a plan view, the first groove 111, the through hole 121, and the second groove 131 are formed in a circular shape on the first metal plate 110, the second metal plate 120, and the third metal plate 131, respectively. Figure 6As shown, the second metal plate 120 is also provided with through holes 121 in a circumferential shape. That is, in the second metal plate 120, the inner area and the outer area are separated. In this case, when the second metal plate 120 is connected to the first metal plate 110 or the third metal plate 130, the second metal plate 120 is arranged in a manner such that the separated inner area and outer area of ​​the second metal plate 120 do not contact, and the second metal plate 120 is connected to the first metal plate 110 or the third metal plate 130. However, if the through holes 121 formed in the second metal plate 120 are provided on the entire circumference and the inner area and the outer area of ​​the second metal plate 120 are separated from each other, it may be difficult to handle when connecting the second metal plate 120. Therefore, as Figure 7 As shown, a connection area 125a and a connection area 125b for connecting the inner area and the outer area may be provided on the second metal plate 120. Since the connection area 125a and the connection area 125b can be used as a heat conduction path, it is preferred that the width of the connection area 125a and the connection area 125b is as small as possible. Figure 7 , two connection regions 125a and 125b are shown, but at least one connection region 125 is sufficient in the second metal plate 120. The number of connection regions 125 corresponds to the number of through holes 121. For example, if the second metal plate 120 has three connection regions 125, the second metal plate 120 has three through holes 121.

[0079] In addition, the first groove 111 and the second groove 131 may be divided into a plurality of parts.

[0080] The heat insulating part 150 is located between the circulation paths 112 and 122 of the inner area and the heaters 113 and 123 of the outer area. In addition, the heat insulating part 150 is provided across the first metal plate 110, the second metal plate 120, and the third metal plate 130, and has a large space. Therefore, the heat insulating part 150 can suppress heat conduction from the inner area to the outer area and heat conduction from the outer area to the inner area not only in the first metal plate 110 but also in the second metal plate 120 and the third metal plate 130. As a result, in the stage 10, a large temperature difference between the inner area and the outer area can be achieved.

[0081] Figure 8 : is a graph showing the temperature gradient distribution of the stage 10 according to one embodiment of the present invention.

[0082] exist Figure 8The horizontal axis of the graph shown shows the position of the surface of the first metal plate 110 along a predetermined direction (for example, the direction of the A1-A2 line) with the center position of the surface of the first metal plate 110 as zero, and the vertical axis of the graph shows the surface temperature of the surface of the first metal plate 110. The first position P1 and the second position P2 respectively represent the positions of the heat insulating portion 150 and the heater 113. That is, the area between the two P1s corresponds to the inner area, and the area between P1 and P2 corresponds to the outer area.

[0083] In the stage 10, the inner area of ​​the first metal plate 110 is cooled by the cooling medium flowing through the circulation paths 112 and 122 in the inner areas of the first metal plate 110 and the second metal plate 120. On the other hand, the outer area of ​​the first metal plate 110 is heated by the heaters 113 and 123 in the outer areas of the first metal plate 110 and the second metal plate 120. The heat of the outer area of ​​the first metal plate 110 is conducted to the inner area, but since the heat insulation part 150 is provided between the inner area and the outer area, the heat conduction path between the inner area and the outer area is limited, and the heat conduction from the outer area to the inner area is suppressed. Therefore, even if the outer area is heated by the heaters 113 and 123, the temperature rise in the inner area is suppressed. In addition, due to the reduction of the heat flow caused by the heat insulation part 150, the temperature difference between the inner area and the outer area becomes larger. For example, the maximum temperature difference between the lowest surface temperature T0 measured near the center of the first metal plate 110 and the highest surface temperature T2 measured near the heater 113 is 20°C or more, preferably 60°C or more, and more preferably 100°C or more. The temperature difference between the inner area and the outer area of ​​the stage 10 can be adjusted by changing the power supplied to the heaters 113, 123 or the conditions of the cooling medium flowing through the circulation paths 112, 122. In addition, as described above, in the stage 10, the heaters 113, 123 can be controlled independently, and the conditions of the cooling medium can be controlled independently. Therefore, the stage 10 can achieve a large temperature difference between the inner area and the outer area while adjusting the temperature of the inner area and the temperature of the outer area.

[0084] A flow path (not shown) for the circulation of the cooling medium is formed inside the shaft portion 200. Specifically, the shaft portion 200 supplies the cooling medium to the inlet 112a through the flow path, and receives the cooling medium discharged from the outlet 112b. One end of the shaft portion 200 is connected to the second surface 102 of the plate portion 100. The other end of the shaft portion 200 is connected to a supply source of the cooling medium. The supply source may be a tank and a pump or a water pipe for holding the cooling medium, but is not limited thereto.

[0085] Furthermore, the lead wires of the heater 113 may be housed inside the shaft portion 200. Furthermore, in the case where an electrostatic chuck is provided, wiring connected to the electrostatic chuck may be housed inside the shaft portion 200.

[0086] In addition, the shaft portion 200 may be connected to a rotating mechanism. By connecting the shaft portion 200 to the rotating mechanism, the stage 10 may be rotated around the long axis of the shaft portion 200 .

[0087] The structure of the stage 10 is described above, and here, the advantages of the stage 10 when compared with the conventional stage will be described.

[0088] In the process in the semiconductor device, it is sometimes necessary to heat the wafer placed on the stage, in which case it is necessary to make the temperature distribution in the wafer uniform. In the conventional stage, when heated, the temperature of the outer area may be lower than the temperature of the inner area. In addition, depending on the semiconductor device, there is a situation where the temperature of the inner area of ​​the wafer placed on the stage rises. For example, in the case of forming a film on a wafer in a CVD (Chemical Vapor Deposition) device or an ALD (Atomic Layer Deposition) device, by applying plasma, the temperature of the central part of the wafer locally rises, and the temperature of the inner area of ​​the wafer is higher than the temperature of the outer area. Therefore, in the conventional stage, a significant temperature drop is observed in the outer area of ​​the wafer.

[0089] On the other hand, in a semiconductor device using stage 10, the temperature difference between the inner area and the outer area of ​​stage 10 is large, which can make up for the above-mentioned significant temperature drop and make the temperature distribution in the wafer uniform. In particular, in stage 10, since a temperature difference larger than the temperature difference that causes cracks in ceramics can be obtained, stage 10 can be applied to more semiconductor devices than a stage using ceramics.

[0090] However, the thermal expansion coefficient of the metal or alloy contained in the first metal plate 110 to the fourth metal plate 140 is larger than that of the ceramic. Therefore, in a conventional stage in which the heat insulation part 150 is not provided and the temperature difference between the inner area and the outer area is increased only by controlling the circulation path 112 and the heater 113, the stage may be deformed due to thermal stress. In other words, in the case of a conventional stage in which the heat insulation part 150 is not provided, the stage is deformed due to thermal stress, so it is difficult to achieve a large temperature difference between the inner area and the outer area of ​​the stage 10. On the other hand, in the stage 10, the space of the heat insulation part 150 shrinks or expands, so that the thermal stress can be alleviated. That is, the heat insulation part 150 is used as a damper to absorb the thermal stress generated by the temperature difference between the inner area and the outer area of ​​the stage. In addition, in the stage 10, the heat insulation part 150 is arranged in a straddling manner on the first metal plate 110, the second metal plate 120 and the third metal plate 130. Therefore, in the stage 10, not only the thermal stress in the first metal plate 110 provided with the heater 113 and the second metal plate 120 provided with the heater 123, but also the thermal stress in the third metal plate 130 that conducts heat from the heaters 113 and 123 is alleviated. Therefore, even if the temperature difference between the inner area and the outer area is increased, the stage 10 is difficult to deform.

[0091] As described above, in the stage 10, the heat insulating portion 150 can suppress the heat from the heaters 113 and 123 provided in the outer region from being conducted to the inner region. That is, since the space formed by the heat insulating portion 150 reduces the cross-sectional area of ​​the heat conduction path connecting the outer region and the inner region of the plate portion 100, the heat insulating portion 150 can play a role of heat blocking / heat blocking. Thus, since the temperature difference between the inner region and the outer region becomes larger in the stage 10, for example, when the stage 10 is applied to a wafer whose temperature in the outer region is significantly lowered, the temperature of the outer region of the wafer can be compensated, and the temperature distribution in the wafer can be made uniform.

[0092] Hereinafter, some modified examples of the stage 10 according to one embodiment of the present invention will be described. In addition, modification of the structure of the stage 10 is not limited to the modified examples described below.

[0093] <Modification 1>

[0094] refer to Fig. 9 , a modification example of the stage 10 according to one embodiment of the present invention will be described. In addition, in the following, the description of the structure that is the same as or similar to the structure of the stage 10 may be omitted.

[0095] Fig. 9 1 is a schematic cross-sectional view showing the structure of a plate portion 100A of a stage 10A according to an embodiment of the present invention.

[0096] like Fig. 9 As shown, the plate portion 100A of the stage 10A includes a first metal plate 110, a second metal plate 120, a third metal plate 130, and a fourth metal plate 140. The first metal plate 110 is provided with a first groove 111, a circulation path 112, and a heater 113. The second metal plate 120 is provided with a through hole 121, a circulation path 122, and a heater 123. The third metal plate 130 is provided with a second groove 131, a circulation path 132, and a heater 133. That is, in the stage 10A, like the first metal plate 110 and the second metal plate 120, the third metal plate 130 is also provided with a circulation path 132 and a heater 133. The circulation path 132 and the heater 133 are arranged to sandwich the heat insulating portion 150.

[0097] In the inner region of the stage 10A, the circulation paths 112, 122, and 132 overlap with each other. In the outer region of the stage 10A, the heaters 113, 123, and 133 overlap with each other. In the stage 10A, the heaters 113, 123, and 133 can be controlled independently, and the conditions of the cooling medium flowing through the circulation paths 112, 122, and 132 can be controlled independently. Therefore, the stage 10A can increase the temperature difference between the inner region and the outer region while adjusting the temperature of the inner region and the temperature of the outer region.

[0098] <Modification 2>

[0099] Reference Fig.10 , another modification of the stage 10 according to one embodiment of the present invention will be described. In addition, in the following description, the description of the structure that is the same as or similar to the structure of the stage 10 or the stage 10A may be omitted.

[0100] Fig.10 1 is a schematic cross-sectional view showing the structure of a plate portion 100B of a stage 10B according to an embodiment of the present invention.

[0101] like Fig.10 As shown, the plate portion 100B of the stage 10B includes a first metal plate 110, a second metal plate 120, a third metal plate 130, and a fourth metal plate 140. The first metal plate 110 is provided with a first groove 111, a circulating path 112, and a heater 113. The second metal plate 120 is provided with a through hole 121. The third metal plate 130 is provided with a second groove 131, a circulating path 132, and a heater 133. That is, in the stage 10B, the circulating paths 112, 132, and the heaters 113, 133 are provided on the first metal plate 110 and the third metal plate 130, and the circulating path and the heater are not provided on the second metal plate 120.

[0102] In the inner region of the stage 10B, the circulation path 112 and the circulation path 132 overlap each other. In the outer region of the stage 10B, the heater 113 and the heater 133 overlap each other. In the stage 10B, the heater 113 and the heater 133 can be controlled independently of each other, and the conditions of the cooling medium flowing through the circulation path 112 and the circulation path 132 can be controlled independently of each other. In the stage 10B, when a sufficient temperature difference between the inner region and the outer region is obtained by the heater 113 provided on the first metal plate 110 and the cooling medium flowing through the circulation path 112, the first metal plate 110 is heated by the heater 133 through the second metal plate 120, or the first metal plate 110 is cooled by the cooling medium flowing through the circulation path 132, so that the temperature difference between the inner region and the outer region can be adjusted.

[0103] <Variation 3>

[0104] Reference Fig.11 , another modification of the stage 10 according to one embodiment of the present invention will be described. In addition, in the following, descriptions of structures that are the same as or similar to the structures of the stages 10 to 10B may be omitted.

[0105] Fig.11 1 is a schematic cross-sectional view showing the structure of a plate portion 100C of a stage 10C according to an embodiment of the present invention.

[0106] like Fig.11 As shown, the plate portion 100C of the stage 10C includes a first metal plate 110, a second metal plate 120, a third metal plate 130, and a fourth metal plate 140. The first metal plate is provided with a first groove 111. The second metal plate 120 is provided with a through hole 121, a circulating flow path 122, and a heater 123. The third metal plate 130 is provided with a second groove 131, a circulating flow path 132, and a heater 133. That is, in the stage 10C, the circulating flow paths 122, 132 and the heaters 123, 133 are provided on the second metal plate 120 and the third metal plate 130, and the circulating flow path and the heater are not provided on the first metal plate 110.

[0107] In the inner area of ​​the stage 10C, the loop 122 and the loop 132 overlap each other. In the outer area of ​​the stage 10C, the heater 123 and the heater 133 overlap each other. In the stage 10C, the heater 123 and the heater 133 can be controlled independently of each other, and the conditions of the cooling medium flowing through the loop 122 and the loop 132 can be controlled independently of each other. In the stage 10C, the heater 123 heats the outer area of ​​the first metal plate 110, and the cooling medium flowing through the loop 122 cools the inner area of ​​the first metal plate 110, thereby increasing the temperature difference between the inner area and the outer area. In addition, by controlling the heater 133 of the third metal plate 130 and the cooling medium flowing through the loop 132, the temperature difference between the inner area and the outer area can be adjusted.

[0108] <Variation 4>

[0109] Reference Fig.12 , another modification of the stage 10 according to one embodiment of the present invention will be described. In addition, in the following, descriptions of structures that are the same as or similar to the structures of the stages 10 to 10C are sometimes omitted.

[0110] Fig.12 1 is a schematic cross-sectional view showing the structure of a plate portion 100D of a stage 10D according to an embodiment of the present invention.

[0111] like Fig.12 As shown, the plate portion 100D of the stage 10D includes a first metal plate 110, a second metal plate 120, a third metal plate 130, and a fourth metal plate 140. The first metal plate 110 is provided with a first groove 111, a circulation path 112, and a heater 113. The second metal plate 120 is provided with a through hole 121 and a heater 123. The third metal plate 130 is provided with a second groove 131. That is, in the stage 10D, the circulation path 112 and the heater 113 are provided on the first metal plate 110, and the circulation path and the heater are not provided on the third metal plate 130. In addition, the heater 123 is provided on the second metal plate 120, but the circulation path is not provided.

[0112] In the outer area of ​​the stage 10D, the heater 113 and the heater 123 overlap each other. In the stage 10D, the heater 113 and the heater 123 can be controlled independently. In the stage 10D, the heater 113 heats the outer area of ​​the first metal plate 110, and the cooling medium flowing in the circulation path 112 cools the inner area of ​​the first metal plate 110, thereby increasing the temperature difference between the inner area and the outer area. In addition, by controlling the heater 123 of the second metal plate 120, the temperature of the outer area can be further adjusted.

[0113] <Variation 5>

[0114] Reference Fig.13 , another modification of the stage 10 according to one embodiment of the present invention will be described. In addition, in the following, descriptions of structures that are the same as or similar to the structures of the stages 10 to 10D are sometimes omitted.

[0115] Fig.13 1 is a schematic cross-sectional view showing the structure of a plate portion 100E of a stage 10E according to an embodiment of the present invention.

[0116] like Fig.13 As shown, the plate portion 100E of the stage 10E includes a first metal plate 110, a second metal plate 120, a third metal plate 130, and a fourth metal plate 140. The first metal plate 110 is provided with a first groove 111, a circulation path 112, and a heater 113. The second metal plate 120 is provided with a through hole 121. The third metal plate 130 is provided with a second groove 131, a circulation path 132, and a heater 133. That is, in the stage 10E, the circulation path 112 and the heater 113 are provided on the first metal plate 110, and the circulation path and the heater are not provided on the third metal plate 130. In addition, the circulation path 122 is provided on the second metal plate 120, but the heater is not provided.

[0117] In the inner region of the stage 10E, the loop 112 and the loop 122 overlap each other. In the stage 10E, the conditions of the cooling medium flowing through the loop 112 and the loop 122 can be controlled independently. In the stage 10E, the heater 113 heats the outer region of the first metal plate 110, and the cooling medium flowing through the loop 112 cools the inner region of the first metal plate 110, thereby increasing the temperature difference between the inner region and the outer region. In addition, by controlling the conditions of the cooling medium flowing through the loop 122 of the second metal plate 120, the temperature of the inner region can be further adjusted.

[0118] <Variation 6>

[0119] refer to Fig.14 , another modification of the stage 10 according to one embodiment of the present invention will be described. In addition, in the following, descriptions of structures that are the same as or similar to the structures of the stages 10 to 10E may be omitted.

[0120] Fig.14 1 is a schematic cross-sectional view showing the structure of a plate portion 100F of a stage 10F according to an embodiment of the present invention.

[0121] like Fig.14As shown, the plate portion 100F of the stage 10F includes a first metal plate 110, a second metal plate 120, a third metal plate 130, and a fourth metal plate 140. The first metal plate 110 is provided with a first groove 111, a circulation path 112, a first heater 113-1, and a second heater 113-2. The second metal plate 120 is provided with a through hole 121. The third metal plate 130 is provided with a second groove 131. That is, in the stage 10F, the circulation path 112, the first heater 113-1, and the second heater 113-2 are provided on the first metal plate 110, and the circulation path and the heater are not provided on the second metal plate 120 and the third metal plate 130.

[0122] In the stage 10F, the first heater 113-1 and the second heater 113-2 can be controlled independently. That is, the first heater 113-1 and the second heater 113-2 are electrically insulated from each other. In the stage 10F, the first heater 113-1 heats the outer area of ​​the first metal plate 110, and the cooling medium flowing in the circulation path 112 cools the inner area of ​​the first metal plate, thereby increasing the temperature difference between the inner area and the outer area. In addition, by controlling the second heater 113-2 of the first metal plate 110, the temperature of the outer area can be further adjusted.

[0123] <Variation 7>

[0124] Reference Fig.15 , another modification of the stage 10 according to one embodiment of the present invention will be described. In addition, in the following, descriptions of structures that are the same as or similar to the structures of the stages 10 to 10F are sometimes omitted.

[0125] Fig.15 1 is a schematic cross-sectional view showing the structure of a plate portion 100G of a stage 10G according to an embodiment of the present invention.

[0126] like Fig.15 As shown, the plate portion 100G of the stage 10G includes a first metal plate 110, a second metal plate 120, a third metal plate 130, and a fourth metal plate 140. The first metal plate 110 is provided with a first groove 111 and a circulating flow path 112. The second metal plate 120 is provided with a through hole 121 and a heater 123. The third metal plate 130 is provided with a second groove 131 and a circulating flow path 132. That is, in the stage 10G, one of the circulating flow path and the heater is provided on each of the first metal plate 110 to the third metal plate 130.

[0127] In the inner area of ​​the stage 10G, the circulation path 112 and the circulation path 132 overlap each other. In the stage 10G, the conditions of the cooling medium flowing through the circulation path 112 and the circulation path 132 can be controlled independently. In the stage 10G, the heater 123 heats the outer area of ​​the first metal plate 110, and the cooling medium flowing through the circulation path 112 cools the inner area of ​​the first metal plate 110, thereby increasing the temperature difference between the inner area and the outer area. In addition, by controlling the conditions of the cooling medium flowing through the circulation path 132 of the third metal plate 130, the temperature of the outer area can be further adjusted.

[0128] In addition, as modification 7, the structure of the plate portion 100G including two circulation paths and one heater is described, but it can also be a structure of a plate portion including one circulation path and two heaters. In this case, the temperature of the outer area can be adjusted by controlling one of the two heaters. In addition, the two circulation paths or the two heaters can be respectively provided on two adjacent metal plates, or respectively provided on two separated metal plates.

[0129] <Variation 8>

[0130] Reference Fig.16 , another modification of the stage 10 according to one embodiment of the present invention will be described. In addition, in the following, descriptions of structures that are the same as or similar to the structures of the stages 10 to 10G are sometimes omitted.

[0131] Fig.16 1 is a schematic cross-sectional view showing the structure of a plate portion 100H of a stage 10H according to an embodiment of the present invention.

[0132] like Fig.16 As shown, the plate portion 100H of the stage 10H includes a first metal plate 110, a second metal plate 120, a third metal plate 130, and a fourth metal plate 140. The first metal plate 110 is provided with a first groove 111, a circulation path 112, and a heater 113. The second metal plate 120 is provided with a through hole 121. The third metal plate 130 is provided with a second groove 131. The fourth metal plate 140 is provided with a circulation path 142 and a heater 143. That is, in the stage 10H, at least one of the circulation path and the heater is provided in the fourth metal plate 140 connected to the shaft portion 200.

[0133] In the inner area of ​​the stage 10H, the loop 112 and the loop 142 overlap each other. In the outer area of ​​the stage 10H, the heater 113 and the heater 143 overlap each other. In the stage 10H, the heater 113 and the heater 143 can be independently controlled, and the conditions of the cooling medium flowing in the loop 112 and the loop 142 can be independently controlled. In the stage 10H, the heater 113 heats the outer area of ​​the first metal plate 110, and the cooling medium flowing in the loop 112 cools the inner area of ​​the first metal plate 110, thereby increasing the temperature difference between the inner area and the outer area. In addition, by controlling the heater 143 of the fourth metal plate 140 and the cooling medium flowing in the loop 142, the temperature difference between the inner area and the outer area can be adjusted.

[0134] <Variation 9>

[0135] Reference Fig.17 , another modification of the stage 10 according to one embodiment of the present invention will be described. In addition, in the following, descriptions of structures that are the same as or similar to the structures of the stages 10 to 10H are sometimes omitted.

[0136] Fig.17 1 is a schematic cross-sectional view showing the structure of a plate portion 100I of a stage 10I according to an embodiment of the present invention.

[0137] like Fig.17 As shown, the plate portion 100I of the stage 10I includes a first metal plate 110, a second metal plate 120, a third metal plate 130 and a fourth metal plate 140. The first metal plate 110 is provided with a first groove 111, a circulation path 112 and a heater 113. The second metal plate 120 is provided with a first through hole 121, a circulation path 122 and a heater 123. The third metal plate 130 is provided with a second through hole 134. The fourth metal plate 140 is provided with a second groove 141. In the plate portion 100I, a heat insulating portion 150I is formed to interconnect the first groove 111, the first through hole 121, the second through hole 134 and the second groove 141. That is, in the stage 10I, the second groove 141 is provided in the fourth metal plate 140 connected to the shaft portion 200, and the heat insulating portion 150I is provided in a leapfrogging manner from the first metal plate 110 to the fourth metal plate 140.

[0138] In the inner area of ​​the stage 10I, the loop 112 and the loop 122 overlap each other. The heater 113 and the heater 123 overlap each other in the outer area of ​​the stage 10I. In the stage 10I, the heater 113 and the heater 123 can be independently controlled, and the conditions of the cooling medium flowing in the loop 112 and the loop 122 can be independently controlled. In the stage 10I, the heater 113 heats the outer area of ​​the first metal plate 110, and the cooling medium flowing in the loop 112 cools the inner area of ​​the first metal plate 110, thereby increasing the temperature difference between the inner area and the outer area. In addition, by controlling the heater 123 of the second metal plate 120 and the cooling medium flowing in the loop 122, the temperature difference between the inner area and the outer area can be adjusted. In the stage 10I, since the heat insulating portion 150I is provided across the first metal plate 110 to the fourth metal plate 140, heat conduction from the inner area to the outer area and heat conduction from the outer area to the inner area can be further suppressed.

[0139] <Variation 10>

[0140] Reference Fig.18 , another modification of the stage 10 according to one embodiment of the present invention will be described. In addition, in the following, descriptions of structures that are the same as or similar to the structures of the stages 10 to 10I are sometimes omitted.

[0141] Fig.18 1 is a schematic cross-sectional view showing the structure of a plate portion 100J of a stage 10J according to an embodiment of the present invention.

[0142] like Fig.18 As shown, the plate portion 100J of the stage 10J includes a first metal plate 110, a second metal plate 120, a third metal plate 130, and a fourth metal plate 140. The first metal plate 110 is provided with a first through hole 114, a circulating path 112, and a heater 113. The second metal plate 120 is provided with a second through hole 121, a circulating path 122, and a heater 123. The third metal plate 130 is provided with a third through hole 134. The fourth metal plate 140 is provided with a fourth through hole 144. In the plate portion 100J, a heat insulating portion 150J is formed to interconnect the first through hole 114, the second through hole 121, the third through hole 134, and the fourth through hole 144. That is, in the stage 10J, a second groove 141 is provided in the fourth metal plate 140 connected to the shaft portion 200, and the heat insulating portion 150J is provided in a straddling manner from the first metal plate 110 to the fourth metal plate 140.

[0143] In addition, when the first through hole 114, the second through hole 121, the third through hole 134, and the fourth through hole 144 are all arranged in a circular shape, the inner area and the outer area of ​​the stage 10J are separated. Therefore, in at least one of the first through hole 114, the second through hole 121, the third through hole 134, and the fourth through hole 144, a Figure 7 The connection area 125 is shown.

[0144] In the inner area of ​​the stage 10J, the loop 112 and the loop 122 overlap each other. The heater 113 and the heater 123 overlap each other in the outer area of ​​the stage 10J. In the stage 10J, the heater 113 and the heater 123 can be controlled independently of each other, and the conditions of the cooling medium flowing through the loop 112 and the loop 122 can be controlled independently of each other. In the stage 10J, the heater 113 heats the outer area of ​​the first metal plate 110, and the cooling medium flowing in the loop 112 cools the inner area of ​​the first metal plate 110, thereby increasing the temperature difference between the inner area and the outer area. In addition, by controlling the heater 123 of the second metal plate 120 and the cooling medium flowing in the loop 122, the temperature difference between the inner area and the outer area can be adjusted. In the stage 10J, since the heat insulating portion 150J is provided across the first metal plate 110 to the fourth metal plate 140 , heat conduction from the inner region to the outer region and heat conduction from the outer region to the inner region can be further suppressed.

[0145] <Variation 11>

[0146] Reference Fig.19 , another modification of the stage 10 according to one embodiment of the present invention will be described. In addition, in the following, descriptions of structures that are the same as or similar to the structures of the stages 10 to 10J are sometimes omitted.

[0147] Fig.19 1 is a schematic cross-sectional view showing the structure of a plate portion 100K of a stage 10K according to an embodiment of the present invention.

[0148] like Fig.19As shown, the plate portion 100K of the stage 10K includes a first metal plate 110, a second metal plate 120, a third metal plate 130 and a fourth metal plate 140. The first metal plate 110 is provided with a first groove 111, a circulation path 112 and a heater 113. The second metal plate 120 is provided with a through hole 121, a circulation path 122 and a heater 123. The third metal plate 130 is provided with a second groove 131. The fourth metal plate 140 is provided with a third groove 141. In the plate portion 100K, a first heat insulating portion 150K-1 is formed to interconnect the first groove 111, the through hole 121 and the second groove 131. In addition, a second heat insulating portion 150K-2 is formed to close the third groove 141 by the third metal plate 130. That is, in the stage 10K, a heat insulating portion 150K divided into two is provided.

[0149] In the inner area of ​​the stage 10K, the loop 112 and the loop 122 overlap each other. The heater 113 and the heater 123 overlap each other in the outer area of ​​the stage 10K. In the stage 10K, the heater 113 and the heater 123 can be independently controlled, and the conditions of the cooling medium flowing through the loop 112 and the loop 122 can be independently controlled. In the stage 10K, the heater 113 heats the outer area of ​​the first metal plate 110, and the cooling medium flowing through the loop 112 cools the inner area of ​​the first metal plate 110, thereby increasing the temperature difference between the inner area and the outer area. In addition, by controlling the heater 123 of the second metal plate 120 and the cooling medium flowing through the loop 122, the temperature difference between the inner area and the outer area can be adjusted. In the stage 10K, since the heat insulating portion 150K is provided across the first metal plate 110 to the fourth metal plate 140 , heat conduction from the inner region to the outer region and heat conduction from the outer region to the inner region can be further suppressed.

[0150] In addition, Fig.19 Although the heat insulating portion 150K is shown divided into two, the number of divisions of the heat insulating portion 150K may be three or more.

[0151] <Variation 12>

[0152] Reference Fig. 20 , another modification of the stage 10 according to one embodiment of the present invention will be described. In addition, in the following, descriptions of structures that are the same as or similar to the structures of the stages 10 to 10K may be omitted.

[0153] Fig. 20 1 is a schematic cross-sectional view showing the structure of a plate portion 100L of a stage 10L according to an embodiment of the present invention.

[0154] like Fig. 20As shown, the plate portion 100L of the stage 10L includes a first metal plate 110, a second metal plate 120, a third metal plate 130 and a fourth metal plate 140. The first metal plate 110 is provided with a first groove 111, a circulation path 112 and a heater 113. The second metal plate 120 is provided with a first through hole 121, a circulation path 122 and a heater 123. The third metal plate 130 is provided with a second through hole 134. The fourth metal plate 140 is provided with a second groove 141. One end of the opening surface of the second through hole 134 is closed by the fourth metal plate 140. A first heat insulating portion 150L-1 is formed in the plate portion 100L so that the first groove 111, the first through hole 121 and the second through hole 134 are interconnected. In addition, although the second groove 141 is open to the outside of the stage 10L, the area in contact with the external atmosphere is increased by providing the second groove 141. In addition, the second groove 141 reduces the cross-sectional area of ​​the heat conduction path connecting the inner area and the outer area. Therefore, the second groove 141 functions as a second heat insulating portion 150L-2 that suppresses heat conduction from the inner area to the outer area and from the outer area to the inner area. That is, the stage 10L is provided with a heat insulating portion 150L divided into two parts.

[0155] In the inner area of ​​the stage 10L, the loop 112 and the loop 122 overlap each other. The heater 113 and the heater 123 overlap each other in the outer area of ​​the stage 10L. In the stage 10K, the heater 113 and the heater 123 can be controlled independently of each other, and the conditions of the cooling medium flowing through the loop 112 and the loop 122 can be controlled independently of each other. In the stage 10L, the heater 113 heats the outer area of ​​the first metal plate 110, and the cooling medium flowing through the loop 112 cools the inner area of ​​the first metal plate 110, thereby increasing the temperature difference between the inner area and the outer area. In addition, by controlling the heater 123 of the second metal plate 120 and the cooling medium flowing through the loop 122, the temperature difference between the inner area and the outer area can be adjusted. In the stage 10L, since the heat insulating portion 150L is provided across the first metal plate 110 to the fourth metal plate 140 , heat conduction from the inner region to the outer region and heat conduction from the outer region to the inner region can be further suppressed.

[0156] In addition, Fig. 20 In the figure, the second groove 141 in contact with the external atmosphere is shown in the fourth metal plate 140 , but the stage 10L may have a structure in which a groove in contact with the external atmosphere is provided in the first metal plate 110 .

[0157] <Variation 13>

[0158] Reference Fig.21, another modification of the stage 10 according to one embodiment of the present invention will be described. In addition, in the following, descriptions of structures that are the same as or similar to the structures of the stages 10 to 10L are sometimes omitted.

[0159] Fig.21 1 is a schematic cross-sectional view showing the structure of a plate portion 100M of a stage 10M according to an embodiment of the present invention.

[0160] like Fig.21 As shown, the plate portion 100M of the stage 10M includes a first metal plate 110, a second metal plate 120, a third metal plate 130 and a fourth metal plate 140. The first metal plate 110 is provided with a first groove 111, a circulation path 112 and a heater 113. The second metal plate 120 is provided with a through hole 121, a circulation path 122 and a heater 123. The third metal plate 130 is provided with a second groove 131. The fourth metal plate 140 is provided with a third groove 141. In the plate portion 100M, a first heat insulating portion 150M-1 is formed so that the first groove 111, the through hole 121 and the second groove 131 are interconnected. In addition, a second heat insulating portion 150M-2 is formed in which the opening surface of the third groove 141 is closed by the third metal plate 130. That is, in the stage 10M, a heat insulating portion 150M divided into two is provided. However, when viewed from a plan view, the second heat insulating portion 150M-2 does not overlap with the first heat insulating portion 150M-1. When viewed from a plan view, the second heat insulating portion 150M-2 overlaps with the heaters 113 and 123. In addition, in the following description, for convenience, the first heat insulating portion 150M-1 is regarded as the boundary between the inner area and the outer area, and the second heat insulating portion 150M-2 is described as being provided in the outer area.

[0161] In the inner area of ​​the stage 10M, the loop 112 and the loop 122 overlap each other. The heater 113 and the heater 123 overlap each other in the outer area of ​​the stage 10M. In the stage 10M, the heater 113 and the heater 123 can be independently controlled, and the conditions of the cooling medium flowing in the loop 112 and the loop 122 can be independently controlled. In the stage 10M, the heater 113 heats the outer area of ​​the first metal plate 110, and the cooling medium flowing in the loop 112 cools the inner area of ​​the first metal plate 110, thereby increasing the temperature difference between the inner area and the outer area. In addition, by controlling the heater 123 of the second metal plate 120 and the cooling medium flowing in the loop 122, the temperature difference between the inner area and the outer area can be adjusted. In the stage 10M, the first heat insulating part 150M-1 can suppress heat conduction from the inner area to the outer area and heat conduction from the outer area to the inner area. In addition, at the position close to the heaters 113 and 123 in the outer region, the second heat insulating part 150M- 2 can suppress heat conduction from the heaters 113 and 123 .

[0162] In addition, Fig.21 , the second heat insulating portion 150M-2 formed by the third groove 141 provided in the fourth metal plate 140 is illustrated, however, the second heat insulating portion 150M-2 may be formed by a groove provided in the third metal plate 130 (a groove different from the second groove 131), or may be formed by a groove provided in the third metal plate 130 and a third groove 141 provided in the fourth metal plate 140. In addition, the width of the second groove 141 may be increased so that the second heat insulating portion 150M-2 overlaps with the first heat insulating portion 150M-1 when viewed from a plan view. In addition, the second heat insulating portion 150M-2 may also be provided in the inner area.

[0163] In the present embodiment, a structure obtained by appropriately combining the structures described in Modification 1 to Modification 13 can also be applied.

[0164] As described above, including the structures described in Modifications 1 to 13, the stage 10 of one embodiment of the present invention includes a heat insulating portion 150 in which the first groove 111 of the first metal plate 110, the through hole 121 of the second metal plate 120, and the second groove of the third metal plate 130 are interconnected. In addition, a first circulation path for cooling the inner area of ​​the first metal plate 110 and a first heater for heating the outer area of ​​the first metal plate 110 are provided with the heat insulating portion 150 sandwiched in the middle. Through this structure, in the stage 10, the temperature difference between the inner area and the outer area can be increased. In addition, the stage 10 includes a second circulation path overlapping with the first circulation path or a second heater overlapping with the first heater. The conditions of the cooling medium circulating in the first circulation path and the conditions of the cooling medium circulating in the second circulation path can be independently controlled. The first heater and the second heater can be independently controlled. Therefore, the temperature of the inner area can be adjusted by controlling the conditions of the cooling medium flowing in the second circulation path, or the temperature of the outer area can be adjusted by controlling the second heater. Therefore, in the stage 10, not only a large temperature difference between the inner area and the outer area can be achieved but also the temperature difference can be adjusted.

[0165] <Second Embodiment>

[0166] Reference Fig. 22 and Fig.23 , a stage 11 according to an embodiment of the present invention will be described. In addition, in the following, description of the structure that is the same as or similar to the structure of the stage 10 is sometimes omitted.

[0167] Fig. 22 It is a schematic cross-sectional view showing the structure of the stage 11 according to one embodiment of the present invention.

[0168] like Fig. 22 As shown, the plate portion 300 of the stage 11 includes a first metal plate 110, a second metal plate 120, a third metal plate 130 and a fourth metal plate 140. The first metal plate 110 includes a first groove 111, a circulation path 112 and a heater 113. The second metal plate 120 includes a through hole 121, a circulation path 122 and a heater 123. The third metal plate 130 includes a second groove 131. In addition, the plate portion 300 of the stage 11 includes a heat insulating portion 150 that interconnects the first groove 111 of the first metal plate 110, the through hole 121 of the second metal plate 120, and the second groove 131 of the third metal plate 130. The circulation paths 112, 122 and the heaters 113, 123 are respectively arranged in the outer area and the inner area bounded by the heat insulating portion 150. That is, in the inner area, the heater 113 and the heater 123 overlap each other. Furthermore, in the outer region, the circulating flow path 112 and the circulating flow path 122 overlap each other.

[0169] The heat insulating part 150 can suppress heat conduction from the inner area to the outer area and from the outer area to the inner area in each of the first metal plate 110 to the third metal plate 130. Thus, a large temperature difference can be achieved between the inner area and the outer area in the stage 11.

[0170] Fig.23 : is a graph showing the temperature gradient distribution of the stage 11 according to one embodiment of the present invention.

[0171] exist Fig.23 The horizontal axis of the graph shown shows the position of the surface of the first metal plate 110 along a predetermined direction, with the center position of the surface of the first metal plate 110 being zero, and the vertical axis of the graph shows the surface temperature of the surface of the first metal plate 110. The first position P1 and the third position P3 respectively show the positions of the heat insulating portion 150 and the circulation path 112. That is, the area between the two P1s corresponds to the inner area, and the area between P1 and P3 corresponds to the outer area.

[0172] In the stage 11, the inner area of ​​the first metal plate 110 is heated by controlling the heater 113 and the heater 123 of the inner area of ​​the first metal plate 110 and the second metal plate 120. On the other hand, the outer area of ​​the first metal plate 110 is cooled by controlling the conditions of the cooling medium of the circulation path 112 and the circulation path 122 flowing through the outer area of ​​the first metal plate 110 and the second metal plate 120. The heat of the inner area of ​​the first metal plate 110 is conducted to the outer area, but since the heat insulation part 150 is provided between the inner area and the outer area, the heat conduction path of the inner area and the outer area is limited, and the heat conduction from the outer area to the inner area is suppressed. Therefore, even if the inner area is heated by the heater 113 and the heater 123, the temperature rise in the outer area is also suppressed. In addition, due to the reduction of the heat flow caused by the heat insulation part 150, the temperature difference between the inner area and the outer area becomes larger. For example, the maximum temperature difference between the highest surface temperature T0 measured near the center of the first metal plate 110 and the lowest surface temperature T3 measured near the circulation path 112 is 20°C or more, preferably 60°C or more, and more preferably 100°C or more. As described above, in the stage 11, the heater 113 and the heater 123 can be independently controlled, and the conditions of the cooling medium can be independently controlled. Therefore, the stage 11 can achieve a large temperature difference between the inner area and the outer area while adjusting the temperature of the inner area and the temperature of the outer area.

[0173] As described above, in the stage 11, the heat insulating portion 150 can suppress the heat from the heater 113 and the heater 123 provided in the outer region from being conducted to the inner region. That is, since the space formed by the heat insulating portion 150 reduces the cross-sectional area of ​​the heat conduction path connecting the outer region and the inner region of the plate portion 100, the heat insulating portion 150 can function as a heat blockage / heat blocking. As a result, in the stage 11, the temperature difference between the inner region and the outer region becomes larger, so that, for example, when the stage 11 is applied to a wafer whose temperature in the inner region is significantly reduced, the temperature of the inner region of the wafer can be compensated, and the temperature distribution in the wafer can be made uniform.

[0174] <Third Embodiment>

[0175] Reference Fig.24 , a stage 12 according to an embodiment of the present invention will be described. Note that in the following, description of a structure that is the same as or similar to that of the stage 10 or the stage 11 is sometimes omitted.

[0176] Fig.24 It is a schematic cross-sectional view showing the structure of the stage 12 according to one embodiment of the present invention.

[0177] like Fig.24 As shown, the plate portion 400 of the stage 12 includes a first metal plate 110, a second metal plate 120, a third metal plate 130, and a fourth metal plate 140. The first metal plate 110 includes a first groove 111, a circulation path 112, and a heater 113. The second metal plate 120 includes a through hole 121, a circulation path 122, and a heater 123. The third metal plate 130 includes a second groove 131. In addition, the plate portion 400 of the stage 12 includes a heat insulating portion 150 that interconnects the first groove 111 of the first metal plate 110, the through hole 121 of the second metal plate 120, and the second groove 131 of the third metal plate 130. In the first metal plate 110, the circulation path 112 and the heater 113 are respectively arranged in the inner area and the outer area with the heat insulating portion 150 as the boundary. In addition, in the second metal plate 120, the circulation path 122 and the heater 123 are respectively arranged in the outer region and the inner region with the heat insulating portion 150 as the boundary. That is, in the inner region, the circulation path 112 and the heater 123 overlap each other. In addition, in the outer region, the heater 113 and the circulation path 122 overlap each other.

[0178] In the stage 12, the temperature of the first metal plate 110 is controlled by using the cooling medium and the heater 113 that flow through the circulation path 112 provided in the first metal plate 110. At this time, the heat conduction from the outer area to the inner area can be suppressed by the heat insulation part 150, so that Figure 8The temperature gradient distribution shown can achieve a large temperature difference between the inner region and the outer region. In addition, the use of a cooling medium flowing through the circulation path 122 can also suppress heat conduction from the first metal plate 110 to the second metal plate 120 .

[0179] In addition, in the stage 12, the temperature of the first metal plate 110 is controlled by the heater 123 provided on the second metal plate 120 and the cooling medium flowing in the circulation path 112. At this time, the heat conduction from the inner area to the outer area can be suppressed by the heat insulation part 150, so that Fig.23 The temperature gradient distribution shown can achieve a large temperature difference between the inner area and the outer area.

[0180] Therefore, in the stage 12, two types of temperature gradient distributions with a large temperature difference between the inner area and the outer area can be realized.

[0181] <Modification 1>

[0182] Reference Fig.25 , a position modification example of the stage 12 according to one embodiment of the present invention will be described. In addition, in the following, description of the structure that is the same as or similar to the structure of the stage 12 may be omitted.

[0183] Fig.25 1 is a schematic cross-sectional view showing the structure of a plate portion 400A of a stage 12A according to an embodiment of the present invention.

[0184] like Fig.25 As shown, the plate portion 400A of the stage 12A includes a first metal plate 110, a second metal plate 120, a third metal plate 130, and a fourth metal plate 140. The first metal plate 110 is provided with a first groove 111, a first circulation path 112-1, a second circulation path 112-2, a first heater 113-1, and a second heater 113-2. The second metal plate 120 is provided with a through hole 121. The third metal plate 130 is provided with a second groove 131. In addition, the plate portion 400A of the stage 12A includes a heat insulating portion 150 that interconnects the first groove 111 of the first metal plate 110, the through hole 121 of the second metal plate 120, and the second groove 131 of the third metal plate 130. The first circulation path 112-1 and the first heater 113-1 are arranged in an inner area with the heat insulating portion 150 as a boundary. The second circulation path 112 - 2 and the second heater 113 - 2 are disposed in the outer region with the heat insulating portion 150 as a boundary.

[0185] In the stage 12A, the temperature of the first metal plate 110 is controlled by using the cooling medium flowing through the first circulation path 112-1 provided in the inner region and the second heater 113-2 provided in the outer region. At this time, the heat conduction from the outer region to the inner region can be suppressed by the heat insulating portion 150, so that Figure 8 The temperature gradient distribution shown can achieve a large temperature difference between the inner area and the outer area.

[0186] In addition, in the stage 12A, the temperature of the first metal plate 110 is controlled by the first heater 113-1 provided in the inner region and the cooling medium flowing in the circulation path provided in the outer region. At this time, since the heat conduction to the inner region can be suppressed by the heat insulating portion 150, it is possible to obtain Fig.23 The temperature gradient distribution shown can achieve a large temperature difference between the inner area and the outer area.

[0187] Therefore, in the stage 12A, two types of temperature gradient distributions with a large temperature difference between the inner area and the outer area can be realized. In addition, in the second metal plate 120 or the third metal plate 130, a circulation path and a heater can be arranged in the same manner as the first metal plate 110. In this case, the temperature of the first metal plate 110 can be adjusted using the cooling medium and the heater that flow through the circulation path arranged in the second metal plate 120 or the third metal plate 130.

[0188] <Fourth Embodiment>

[0189] Reference Fig.26 , an etching device 50 according to an embodiment of the present invention will be described. The etching device 50 includes a stage 10. Therefore, the description of the same or similar structure as that of the stage 10 described in the first embodiment may be omitted below.

[0190] Fig.26 It is a schematic cross-sectional view showing the structure of an etching device 50 according to one embodiment of the present invention.

[0191] The etching device 50 can perform dry etching on various films. The etching device 50 includes a chamber 502. The chamber 502 provides a space for etching a film such as a conductor, an insulator, or a semiconductor formed on a wafer.

[0192] An exhaust device 504 is connected to the chamber 502 so that the interior of the chamber 502 can be set to a reduced pressure atmosphere. The chamber 502 is also provided with an inlet pipe 506 for introducing a reaction gas, and the reaction gas for etching is introduced into the chamber 502 through a valve 508. As the reaction gas, for example, carbon tetrafluoride (CF 4 ), octafluorocyclobutane (cC 4 F8 ), decafluorocyclopentane (cC 5 F 10 ) or hexafluorobutadiene (C 4 F 6 ) and the like.

[0193] The microwave source 512 may be disposed at the upper portion of the chamber 502 via the waveguide 510. The microwave source 512 has an antenna for supplying microwaves, etc., and outputs high-frequency microwaves such as 2.45 GHz microwaves or 13.56 MHz radio waves (RF). The microwaves generated by the microwave source 512 are propagated to the upper portion of the chamber 502 through the waveguide 510, and are introduced into the chamber 502 through a window 514 made of quartz or ceramics. The reaction gas is plasmatized by the microwaves, and the film is etched by the electrons, ions, or radicals contained in the plasma.

[0194] The stage 10 for placing the wafer is arranged at the lower part of the chamber 502. The power supply 524 is connected to the stage 10, and applies high-frequency power to the stage 10, forming an electric field caused by microwaves in a direction perpendicular to the surface of the stage 10 and the surface of the wafer. Magnets 516, 518, and 520 may be arranged at the upper part and the side of the chamber 502. Magnets 516, 518, and 520 may be permanent magnets or electromagnets with electromagnetic coils. Magnets 516, 518, and 520 generate a magnetic field parallel to the stage 10 and the surface of the wafer. Through the cooperation of the magnetic field and the electric field caused by microwaves, the electrons in the plasma resonate under the action of the Lorentz force and are bound to the stage 10 and the surface of the wafer. As a result, high-density plasma may be generated on the surface of the wafer.

[0195] A heater power supply 530 for controlling the heater 113 provided on the stage 10 is also connected to the stage 10. As an optional structure, a power supply 526 for an electrostatic chuck for fixing a wafer on the stage 10, a temperature controller 528 for controlling the temperature of a medium circulating inside the stage 10, and a rotation control device (not shown) for rotating the stage 10 may also be connected to the stage 10.

[0196] <Fifth Embodiment>

[0197] Reference Fig. 27 , a CVD apparatus 60 according to an embodiment of the present invention will be described. The CVD apparatus 60 includes a stage 10. Therefore, the description of the same or similar structure as that of the stage 10 described in the first embodiment may be omitted below.

[0198] Fig. 27 It is a schematic cross-sectional view showing the structure of a CVD apparatus 60 according to one embodiment of the present invention.

[0199] The CVD apparatus 60 has a chamber 602. The CVD apparatus 60 provides a place for chemically reacting reaction gases to chemically form various films on a wafer.

[0200] The exhaust device 604 is connected to the chamber 602 and can reduce the pressure in the chamber 602. The chamber 602 is also provided with an inlet pipe 606 for introducing a reaction gas, and the reaction gas for film formation is introduced into the chamber 602 through a valve 608. Various gases can be used as the reaction gas according to the film to be prepared. The gas can be a liquid at room temperature. For example, a thin film of silicon, silicon oxide or silicon nitride can be formed by using silane, dichlorosilane or tetraethoxysilane. In addition, a metal thin film of tungsten or aluminum can be formed by using tungsten fluoride or trimethylaluminum.

[0201] Similar to the etching device 50, the microwave source 612 can be arranged at the upper part of the chamber 602 via the waveguide 610. The microwaves generated by the microwave source 612 are introduced into the chamber 602 through the waveguide 610. The reaction gas is plasmatized by the microwaves, and the chemical reaction of the gas is promoted by the various active species contained in the plasma. The product obtained by the chemical reaction is accumulated on the wafer to form a thin film. As an arbitrary structure, a magnet 644 for increasing the plasma density can be arranged in the chamber 602. The stage 10 is arranged at the lower part of the chamber 602, and the thin film can be deposited in a state where the wafer is placed on the stage 10. Similar to the etching device 50, magnets 616 and magnets 618 can be further arranged on the side of the chamber 602.

[0202] A heater power supply 630 for controlling the heater 113 provided on the stage 10 is also connected to the stage 10. A power supply 624 for supplying high-frequency power to the stage 10, a power supply 626 for an electrostatic chuck, a temperature controller 628 for controlling the temperature of a cooling medium circulating inside the stage 10, and a rotation control device (not shown) for rotating the stage 10 may also be connected to the stage 10 as an arbitrary structure.

[0203] <Sixth Embodiment>

[0204] Reference Fig.28 , a sputtering device 70 according to an embodiment of the present invention will be described. The sputtering device 70 includes a stage 10. Therefore, the description of the same or similar structure as that of the stage 10 described in the second embodiment may be omitted below.

[0205] Fig.28 It is a schematic cross-sectional view showing the structure of a sputtering device 70 according to one embodiment of the present invention.

[0206] The sputtering device 70 has a chamber 702. The sputtering device 70 provides a place for high-speed ions to collide with a target and for target atoms generated in the collision to be deposited on a wafer.

[0207] An exhaust device 704 for reducing the pressure inside the chamber 702 is connected to the chamber 702. The chamber 702 is provided with a gas inlet pipe 706 and a valve 708 for introducing a sputtering gas such as argon into the chamber 702.

[0208] A target stage 710 holding a target containing a film forming material and functioning as a cathode is provided at the bottom of the chamber 702, and a target 712 is provided thereon. A high frequency power supply 714 is connected to the target stage 710 and can generate plasma in the chamber 702.

[0209] The stage 10 may be disposed at the upper portion of the chamber 702. In this case, the thin film is formed in a state where the wafer is placed under the stage 10. As with the etching device 50 and the CVD device 60, a heater power source 730 is connected to the stage 10. In addition, a power source 724 for supplying high-frequency power to the stage 10, a power source 726 for an electrostatic chuck, a temperature controller 728, and a rotation control device (not shown) for rotating the stage 10 may be connected to the stage 10.

[0210] Argon ions accelerated by the plasma generated in the chamber 702 collide with the target 712, thereby ejecting atoms of the target 712. When a shutter 716 is opened, the ejected atoms fly toward a wafer disposed under the stage 10 and are deposited on the wafer.

[0211] Although Fig.28 The structure in which the stage 10 is disposed at the upper part of the chamber 702 and the target stage 710 is disposed at the lower part of the chamber 702 is shown, but the structure of the sputtering device 70 is not limited thereto, and may have a structure in which the target 712 is located above the stage 10. Alternatively, the structure in which the stage 10 is disposed in a manner that the main surface of the wafer is arranged vertically with respect to the horizontal plane and the target stage 710 is disposed in a manner opposite thereto may be also possible.

[0212] <Seventh Embodiment>

[0213] Reference Fig.29 , a vapor deposition device 80 according to an embodiment of the present invention will be described. The vapor deposition device 80 includes a stage 10. Therefore, the description of the same or similar structure as that of the stage 10 described in the first embodiment may be omitted below.

[0214] Fig.29 It is a schematic cross-sectional view showing the structure of a vapor deposition device 80 according to one embodiment of the present invention.

[0215] The evaporation device 80 has a chamber 802. The evaporation device 80 provides a space for evaporating a material in an evaporation source 810 and depositing the evaporated material on a wafer.

[0216] An exhaust device 504 for making the interior of the chamber 802 high vacuum is connected to the chamber 802. The chamber 802 is provided with an inlet pipe 806 for returning the chamber 802 to atmospheric pressure, and an inert gas such as nitrogen or argon is introduced into the chamber 802 through a valve 808.

[0217] The stage 10 may be disposed at the upper portion of the chamber 802. The deposition of the material is performed with the wafer placed under the stage 10. As with the etching device 50, the CVD device 60, and the sputtering device 70, a heater power supply 828 is further connected to the stage 10. In addition, as an arbitrary structure, a power supply 824 for an electrostatic chuck, a temperature controller 826, and a rotation control device 830 for rotating the stage 10 may be connected to the stage 10. The stage 10 may further include a mask holder 816 for fixing a metal mask between the wafer and the evaporation source 810. Thus, the metal mask may be arranged near the wafer so that the opening of the metal mask overlaps with the deposition area of ​​the material.

[0218] The evaporation source 810 is provided at the lower side of the chamber, and the material to be evaporated is filled in the evaporation source 810. The evaporation source 810 is provided with a heater for heating the material, and the heater is controlled by the control device 812. The evaporation is started by making the inside of the chamber 802 a high vacuum using the exhaust device 804, and heating the evaporation source 810 to vaporize the material. When the evaporation speed becomes constant, the material is deposited on the wafer by opening the shielding plate 814.

[0219] As described above, the etching apparatus 50, CVD apparatus 60, sputtering apparatus 70, and vapor deposition apparatus 80 described in the fourth to seventh embodiments use the stage 10. By using the stage 10, the temperature distribution in the wafer can be made uniform for a wafer whose outer region temperature is significantly lowered.

[0220] As the embodiments of the present invention, each embodiment as described above can be appropriately combined and implemented as long as they are not contradictory. In addition, those skilled in the art can appropriately add, delete, or design and change constituent elements according to each embodiment, and as long as they have the gist of the present invention, these are included in the scope of the present invention.

[0221] Furthermore, even if other effects different from the effects obtained by the above-mentioned embodiments are effects that are obvious from the description of this specification or that can be easily predicted by a person skilled in the art, they can be understood as effects that can be obtained by the present invention.

[0222] (Explanation of Reference Numerals)

[0223] 10, 10A, 10B, 10C, 10D, 10E, 10F, 10G, 10H, 10I, 10J, 10K, 10L, 10M, 11, 12, 12A: stage; 50: etching device; 60: CVD device; 70: sputtering device;

[0224] 80: evaporation device; 100, 100A, 100B, 100C, 100D, 100E, 100F, 100G, 100H, 100I, 100J, 100K, 100L, 100M: plate portion; 101: first surface; 102: second surface;

[0225] 110: first metal plate; 111: groove; 112: circulation path; 112a: inlet; 112b: outlet;

[0226] 113: heater; 120: second metal plate; 121: through hole; 122: circulation path;

[0227] 123: heater; 125, 125a, 125b: connection area; 130: third metal plate; 131: groove;

[0228] 132: circulation path; 133: heater; 134: through hole; 140: fourth metal plate; 141: groove;

[0229] 144: through hole; 150, 150L, ​​150M: heat insulation part; 200: shaft part; 300: plate part;

[0230] 400, 400A: plate portion; 502: chamber; 504: exhaust device; 506: air inlet pipe; 508: valve;

[0231] 510: waveguide; 512: microwave source; 514: window; 516, 518, 520: magnets;

[0232] 524, 526: power supply; 528: temperature controller; 530: heater power supply; 602: chamber;

[0233] 604: exhaust device; 606: air inlet pipe; 608: valve; 610: waveguide; 612: microwave source;

[0234] 616, 618: magnet; 624, 626: power supply; 628: temperature controller; 630: heater power supply;

[0235] 644: magnet; 702: chamber; 704: exhaust device; 706: air inlet pipe; 708: valve;

[0236] 710: target stage; 712: target; 714: high frequency power supply; 716: shielding plate; 724, 726: power supply;

[0237] 728: temperature controller; 730: heater power supply; 802: chamber; 804: exhaust device;

[0238] 806: air inlet pipe; 808: valve; 810: evaporation source; 812: control device; 814: shielding plate;

[0239] 816: mask support; 824: power supply; 826: temperature controller; 828: heater power supply;

[0240] 830: Rotary Controls

Claims

1. A stage, comprising: a first metal plate including a first groove; a second metal plate, located below the first metal plate and comprising a first through hole; a third metal plate located below the second metal plate and including at least one of a second groove and a second through hole; a heat insulating portion, wherein the first groove, the first through hole, and at least one of the second groove and the second through hole are connected to each other; a first circulating flow path and a first heater, wherein the first circulating flow path and the first heater are provided on one metal plate among the first metal plate, the second metal plate and the third metal plate; and In at least one of the second circulation path and the second heater, The first circulation path and the second circulation path are arranged in a first region bounded by the heat insulating portion. The first heater and the second heater are provided in a second region opposite to the first region with the heat insulating portion as a boundary.

2. The stage according to claim 1, further comprising: a fourth metal plate located below the third metal plate, The second circulation path and the second heater are provided on the fourth metal plate.

3. The stage according to claim 1, wherein: The first region is a region surrounded by the heat insulating portion.

4. The stage according to claim 1, wherein: The second region is a region surrounded by the heat insulating portion.

5. The stage according to claim 1, wherein: The second heater is provided on the one metal plate on which the first heater is provided.

6. The stage according to claim 5, wherein: One of the two adjacent metal plates is the one metal plate for providing the first heater, and the second circulation path is provided on the other of the two adjacent metal plates.

7. The stage according to claim 5, wherein: One of the two spaced metal plates is the metal plate for providing the first heater, and the second circulation path is provided on the other of the two spaced metal plates.

8. The stage according to claim 1, wherein: One of the two adjacent metal plates is the one metal plate for providing the first heater, and the second heater is provided on the other of the two adjacent metal plates.

9. The stage according to claim 8, wherein: The second circulation path is provided on the other of the two adjacent metal plates.

10. The stage according to claim 8, wherein: The second circulation path is provided on a metal plate different from the two adjacent metal plates.

11. The stage according to claim 1, wherein: One of the two spaced metal plates is the metal plate for providing the first heater, and the second heater is provided on the other of the two spaced metal plates.

12. The stage according to claim 11, wherein: The second circulation path is provided on the other of the two spaced metal plates.

13. The stage according to claim 11, wherein: The second circulation path is provided on a metal plate different from the two separated metal plates.

14. The stage according to claim 1, wherein: A cross-sectional diameter of the second heater is different from a cross-sectional diameter of the first heater.

15. The stage according to claim 1, wherein: The first heater and the second heater are electrically insulated from each other.

16. A stage, comprising: a first metal plate including a first groove; a second metal plate, located below the first metal plate and comprising a first through hole; a third metal plate located below the second metal plate and including at least one of a second groove and a second through hole; a heat insulating portion, wherein the first groove, the first through hole, and at least one of the second groove and the second through hole are connected to each other; A first circulation path, which is provided on one metal plate among the first metal plate, the second metal plate and the third metal plate; a first heater provided on another metal plate different from the one metal plate; and At least one of the second circulation path and the second heater is provided on a metal plate different from the one metal plate and the other metal plate, The first circulation path and the second circulation path are arranged in a first region bounded by the heat insulating portion. The first heater and the second heater are provided in a second region opposite to the first region with the heat insulating portion as a boundary.

17. The stage according to claim 16, further comprising: a fourth metal plate located below the third metal plate, At least one of the second circulating flow path and the second heater is disposed on the fourth metal plate.

18. The stage according to claim 16, wherein: The first region is a region surrounded by the heat insulating portion.

19. The stage according to claim 16, wherein: The second region is a region surrounded by the heat insulating portion.

20. The stage according to claim 16, wherein: The one metal plate is adjacent to the other metal plate.

21. The stage according to claim 16, wherein: The one metal plate is spaced apart from the other metal plate.

22. A stage, comprising: a first metal plate including a first groove; a second metal plate, located below the first metal plate and comprising a first through hole; a third metal plate located below the second metal plate and including at least one of a second groove and a second through hole; a heat insulating portion, wherein the first groove, the first through hole, and at least one of the second groove and the second through hole are connected to each other; A first circulation path and a first heater, which are arranged on one metal plate among the first metal plate, the second metal plate and the third metal plate; as well as A second circulation path and a second heater, The first circulation path and the second heater are arranged in a first region bounded by the heat insulating portion. The first heater and the second circulation path are provided in a second region opposite to the first region with the heat insulating portion as a boundary.

23. The stage according to claim 22, further comprising: a fourth metal plate located below the third metal plate, At least one of the second circulation path and the second heater is provided on the fourth metal plate.

24. The stage according to claim 22, wherein: The second circulation path and the second heater are provided on the one metal plate on which the first circulation path and the first heater are provided.

25. The stage according to claim 22, wherein: One of the two adjacent metal plates is the metal plate for setting the first circulation path and the first heater, The second circulation path and the second heater are provided on the other of the two adjacent metal plates.

26. The stage according to claim 22, wherein: One of the two separated metal plates is the metal plate used to set the first circulation path and the second circulation path, The second circulation path and the second heater are provided on the other of the two spaced metal plates.

27. The stage according to any one of claims 1 to 26, wherein: The temperature difference between the lowest surface temperature and the highest surface temperature of the first metal plate is 20° C. or more.

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