Leak Detection Method, Control Device and Computer Readable Storage Medium for Process Chamber

Abstract

The present disclosure provides a leak detection method, a control device, and a computer-readable storage medium for a process chamber. The leak detection method for the process chamber is to move a workpiece carrier device to multiple leak detection positions by a moving component and detect the leak detection pressure of the process chamber at each leak detection position within the corresponding leak detection time after exhausting and degassing the process chamber, so as to perform leak detection, thereby determining whether there is a leak in the process chamber and whether there is a leak defect in the moving component. Compared with the related art, the leak detection method for the process chamber provided by the present disclosure has a simple process, does not affect the semiconductor process, has accurate detection, and can timely repair or replace the moving component detected with a leak defect, ensuring compliance with the airtightness requirements of the process chamber, being more conducive to the subsequent process of semiconductor wafers, and improving the yield.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor technology, and particularly to a leak detection method for a process chamber, a control device, and a computer-readable storage medium. Background Art

[0002] In semiconductor manufacturing processes, semiconductor process equipment is often utilized to perform process treatments on semiconductor wafers placed in the process chambers of the semiconductor process equipment. Such semiconductor process equipment can be, for example, semiconductor thin film deposition equipment, plasma ashing equipment, plasma etching equipment, etc. Taking semiconductor thin film deposition equipment as an example, through the semiconductor thin film deposition equipment, thin film deposition can be carried out on semiconductor wafers. Thin film deposition techniques generally include PVD (Physical Vapor Deposition) and CVD (Chemical Vapor Deposition).

[0003] Generally, in the process of implementing the above processes on semiconductor wafers using semiconductor process equipment, the semiconductor wafers to be processed (e.g., wafers) are placed in a sealed process chamber, and reaction gases required for the process reaction are provided to enter the process chamber to participate in the reaction. As the requirements for the process quality of semiconductor wafers increase relatively, the accuracy of pressure control and the airtightness requirements in the process chamber are also relatively strict. However, due to the deterioration of some components in semiconductor process equipment after long-term use, cracks may occur, leading to problems such as gas leakage in the process chamber. For example, in some semiconductor process equipment, heating plates and other components in the process will lift the position of the semiconductor wafer through lifting components. After long-term use, the lifting components are prone to fatigue rupture, resulting in gas leakage in the process chamber, which has an adverse impact on both the process results and the machine safety. Moreover, the leakage rate is strongly correlated with the position of the moving component. Some positions do not leak, some positions leak, some positions have a high leakage rate, and some positions have a low leakage rate. In related technologies, it is usually manually checked whether there is leakage in the chamber, and the leakage rate situation of the lifting component at different positions is not concerned, resulting in a large leak detection blind area for the leakage rate.

[0004] Therefore, it is particularly important to promptly detect abnormal situations of the machine and promptly replace or repair components with leakage defects. Summary of the Invention

[0005] In view of the above-mentioned disadvantages of the related technologies, the purpose of the present disclosure is to provide a leak detection method for a process chamber, a control device, and a computer-readable storage medium to solve various problems in the related technologies.

[0006] The first aspect of the present disclosure provides a leak detection method for a process chamber, which is applied to semiconductor process equipment. The semiconductor process equipment includes a process chamber, a workpiece carrier device, a moving component, at least one intake device, and an exhaust device. An intake main valve is provided between the at least one intake device and the process chamber. The exhaust device includes an exhaust pipeline and an exhaust valve assembly and an exhaust pump provided on the exhaust pipeline. The leak detection method for the process chamber includes the following steps:

[0007] Close the intake main valve, open the exhaust valve assembly in the exhaust device, and start the exhaust pump so that the process chamber enters the exhaust mode to perform exhaust;

[0008] Close the intake main valve, close the exhaust valve assembly in the exhaust device, so that the process chamber enters the degassing mode to perform degassing; after the degassing is completed, detect the initial pressure of the process chamber;

[0009] Close the intake main valve, close the exhaust valve assembly in the exhaust device, so that the process chamber enters the leak detection mode. Move the workpiece carrier device to multiple leak detection positions through the moving component, and detect the leak detection pressure of the process chamber at each leak detection position within the corresponding leak detection time;

[0010] Determine whether there is a leak in the process chamber and whether there is a leak defect in the moving component according to the detected initial pressure and multiple leak detection pressures of the process chamber.

[0011] In some examples of the first aspect, moving the workpiece carrier device to multiple leak detection positions through the moving component and detecting the leak detection pressure of the process chamber at each leak detection position within the corresponding leak detection time includes: in the moving order, sequentially move the workpiece carrier device to a new leak detection position through the moving component and detect the leak detection pressure of the process chamber at the new detection position within the corresponding leak detection time to obtain a corresponding number of multiple leak detection pressures.

[0012] In some examples of the first aspect, for any leak detection position, detecting the leak detection pressure of the process chamber at the leak detection position within the corresponding leak detection time includes the following methods: move the workpiece carrier device to the leak detection position through the moving component, and after a continuous corresponding leak detection time, detect the leak detection pressure of the process chamber; or, move the workpiece carrier device to the leak detection position at a uniform speed within the corresponding leak detection time through the moving component and detect the leak detection pressure of the process chamber when reaching the leak detection position.

[0013] In certain examples of the first aspect, determining whether there is a leak in the process chamber and whether there is a leak defect in the moving part according to the initial pressure of the detected process chamber and multiple leak detection pressures includes the following steps: calculating the segmented leak rate per single leak detection time for each change in the detection position according to the initial pressure of the detected process chamber and the multiple leak detection pressures; the segmented leak rate is the ratio of the pressure difference corresponding to before and after each change in the detection position to the leak detection time; comparing each calculated segmented leak rate with a set leak threshold, and when any one of the segmented leak rates is greater than or equal to the leak threshold, determining that there is a leak in the process chamber; when it is determined that there is a leak in the process chamber and there are at least two different segmented leak rates, determining that there is a leak defect in the moving part.

[0014] In certain examples of the first aspect, determining whether there is a leak in the process chamber and whether there is a leak defect in the moving part according to the initial pressure of the detected process chamber and multiple leak detection pressures further includes the following steps: calculating the overall leak rate of the change in the initial position corresponding to the initial pressure and the final position corresponding to the last leak detection pressure within the total leak detection time according to the initial pressure of the detected process chamber and the last leak detection pressure among the multiple leak detection pressures; the overall leak rate is the ratio of the difference between the last leak detection pressure and the initial pressure corresponding to before and after the change in the detection position to the total leak detection time; comparing the calculated overall leak rate with a set leak threshold, and when the overall leak rate is greater than or equal to the leak threshold, determining that there is a leak in the process chamber and there is a leak defect in the moving part.

[0015] In certain examples of the first aspect, the moving part is a lifting part, the detection positions include the upper limit position, the lower limit position, and at least one interval position between the upper limit position and the lower limit position, the upper limit position refers to the highest position where the workpiece carrying device rises, and the lower limit position refers to the lowest position where the workpiece carrying device descends; moving the workpiece carrying device to multiple leak detection positions through the moving part and detecting the leak detection pressure of the process chamber at each leak detection position within the corresponding leak detection time includes: lifting and lowering the workpiece carrying device to the upper limit position, the lower limit position, and at least one interval position through the lifting part and detecting the leak detection pressure of the process chamber at each leak detection position within the corresponding leak detection time.

[0016] In some examples of the first aspect, lifting the workpiece carrier device to the upper limit position, the lower limit position, and at least one intermediate position by the lifting member includes any of the following: first lifting the workpiece carrier device to the upper limit position by the lifting member, then lowering the workpiece carrier device to the lower limit position by the lifting member, and then lifting the workpiece carrier device to at least one intermediate position by the lifting member; first lifting the workpiece carrier device to the upper limit position by the lifting member, then lowering the workpiece carrier device to at least one intermediate position by the lifting member, and then lowering the workpiece carrier device to the lower limit position by the lifting member; first lowering the workpiece carrier device to the lower limit position by the lifting member, then lifting the workpiece carrier device to the upper limit position by the lifting member, and then lowering the workpiece carrier device to at least one intermediate position by the lifting member; first lowering the workpiece carrier device to the lower limit position by the lifting member, then lifting the workpiece carrier device to at least one intermediate position by the lifting member, and then lifting the workpiece carrier device to the upper limit position by the lifting member.

[0017] In some examples of the first aspect, starting the exhaust pump to perform exhaust includes: starting the exhaust pump to exhaust; after a continuous exhaust time, closing the exhaust pump to stop exhaust; after degassing is completed, detecting the initial pressure of the process chamber includes: performing degassing, after a continuous degassing time, ending degassing, and detecting the initial pressure of the process chamber.

[0018] The second aspect of the present disclosure provides a control device, including: a processor; a memory storing a leak detection program for the process chamber; wherein, when the leak detection program for the process chamber is run by the processor, it executes the leak detection method for the process chamber as described above.

[0019] The third aspect of the present disclosure provides a computer-readable storage medium, on which a leak detection program for the process chamber is stored, and when the leak detection program for the process chamber is run by the processor, it executes the leak detection method for the process chamber as described above.

[0020] As described above, the embodiments of the present disclosure provide a leak detection method for a process chamber, a control device, and a computer-readable storage medium, which can be used to detect leaks in a process chamber with moving parts. In the leak detection method for the process chamber, first exhaust and degas the process chamber in sequence. After degassing is completed, move the workpiece carrier device to different leak detection positions by the moving parts and detect the leak detection pressure of the process chamber at the corresponding leak detection times respectively to obtain different leak detection pressures, and then determine whether there is a leak in the process chamber and whether there is a leak defect in the moving parts. Compared with the related art, the leak detection method for the process chamber provided by the present disclosure has a simple process, does not affect the semiconductor process, has accurate detection, and can timely repair or replace the moving parts detected to have internal leaks, ensuring compliance with the airtightness requirements of the process chamber, being more conducive to the subsequent semiconductor wafer manufacturing process, and improving the yield. Description of the Drawings

[0021] Figure 1 Shown is a schematic structural diagram of a semiconductor process equipment applied to the leak detection method of the process chamber of the present disclosure in an embodiment.

[0022] Figure 2 Shown is a schematic flow diagram of the leak detection method of the process chamber provided by the present disclosure in an embodiment.

[0023] Figures 3 to 7 Shown as Figure 1 in the semiconductor process equipment according to Figure 2 the method flow of in schematic structural diagrams at different stages.

[0024] Figure 8 Shown is a schematic block diagram of the control device provided by the present disclosure in an embodiment. Detailed Description of the Invention

[0025] The following uses specific specific examples to illustrate the embodiments of the present disclosure. Those skilled in the art can easily understand other advantages and effects of the present disclosure from the information disclosed by the present disclosure. The present disclosure can also be implemented or applied through other different specific embodiments. Various details in the present disclosure can also be modified or changed according to different viewpoints and application modules without departing from the spirit of the present disclosure. It should be noted that, without conflict, the embodiments and features in the embodiments of the present disclosure can be combined with each other.

[0026] The following takes the drawings as a reference and details the embodiments of the present disclosure so that those skilled in the technical field to which the present disclosure belongs can easily implement it. The present disclosure can be embodied in many different forms and is not limited to the embodiments described herein.

[0027] In the description of the present disclosure, the reference terms "one embodiment", "some embodiments", "example", "specific example", or "some examples", etc., mean that the specific features, structures, materials, or characteristics represented in connection with the embodiment or example are included in at least one embodiment or example of the present disclosure. Moreover, the specific features, structures, materials, or characteristics represented can be combined in a suitable manner in any one or a group of embodiments or examples. In addition, without contradiction, those skilled in the art can combine and combine the different embodiments or examples represented in the present disclosure and the features of the different embodiments or examples.

[0028] In addition, the terms "first" and "second" are used for illustrative purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include at least one such feature. In the representation of the present disclosure, the meaning of "a group" is two or more, unless otherwise specifically defined.

[0029] To clearly illustrate the present disclosure, devices irrelevant to the description are omitted, and the same or similar constituent elements throughout the specification are given the same reference numerals.

[0030] Throughout the specification, when it is said that a device is "connected" to another device, this includes not only the case of "direct connection", but also the case of "indirect connection" with other elements interposed therebetween. In addition, when it is said that a certain device "includes" a certain constituent element, unless there is a particularly contrary record, it does not exclude other constituent elements, but means that other constituent elements may also be included.

[0031] Although in some examples the terms first, second, etc. are used herein to denote various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, the first interface and the second interface, etc. are indicated. Furthermore, as used herein, the singular forms "a", "an" and "the" are also intended to include the plural forms unless the context indicates otherwise. It should be further understood that the terms "comprising", "including" indicate the presence of the stated features, steps, operations, elements, modules, items, kinds, and / or groups, but do not preclude the presence, occurrence or addition of one or more other features, steps, operations, elements, modules, items, kinds, and / or groups. The terms "or" and "and / or" used herein are to be interpreted as inclusive or meaning any one or any combination. Thus, "A, B or C" or "A, B and / or C" means "any of the following: A; B; C; A and B; A and C; B and C; A, B and C". An exception to this definition will occur only when the combination of elements, functions, steps or operations is mutually exclusive in some way.

[0032] The technical terms used herein are only for referring to specific embodiments and are not intended to limit the present disclosure. The singular forms used herein also include the plural forms as long as the statements do not clearly indicate the contrary meaning. The meaning of "including" used in the specification is to embody specific characteristics, regions, integers, steps, operations, elements and / or components, and does not exclude the existence or addition of other characteristics, regions, integers, steps, operations, elements and / or components.

[0033] Although not defined differently, including technical terms and scientific terms used herein, all terms have the same meaning as generally understood by those skilled in the art to which this disclosure pertains. Terms defined in commonly used dictionaries are additionally interpreted to have meanings consistent with relevant technical literature and the currently presented disclosure. Unless otherwise defined, they should not be overly interpreted as ideal or overly formulaic meanings.

[0034] In the process of semiconductor wafer manufacturing, strict requirements are imposed on the accuracy of pressure control and airtightness within the process chamber to ensure the product quality and yield of semiconductor wafers during the manufacturing process. Generally, after long-term use, some components (e.g., moving components) in semiconductor process equipment may deteriorate, resulting in cracks and gas leakage within the process chamber, which has an adverse impact on both the process results and the machine's safety.

[0035] Embodiments of the present disclosure provide a leak detection method for a process chamber, which is used to detect gas leakage in the process chamber applied to semiconductor process equipment to determine whether there is leakage in the process chamber and whether there are leakage defects in the moving components.

[0036] Please refer to Figure 1 , which shows a schematic structural diagram of a semiconductor process equipment to which the leak detection method of the process chamber of the present disclosure is applied in an embodiment.

[0037] The semiconductor process equipment is used to perform corresponding process treatments on semiconductor wafers. Such semiconductor process equipment can be, for example, semiconductor thin film deposition equipment, plasma ashing equipment, plasma etching equipment, etc. In the following description, the semiconductor wafer can be, for example, a wafer on which multiple wafers are disposed. The semiconductor process equipment can be, for example, a wafer thin film deposition equipment for depositing a thin film on the wafer. Thin film deposition techniques generally include PVD (Physical Vapor Deposition) and CVD (Chemical Vapor Deposition), etc.

[0038] As Figure 1 shown, the semiconductor process equipment in this embodiment may include: a process chamber 10, a workpiece carrier 11, a moving component 12, at least one intake device, and an exhaust device.

[0039] The process chamber 10 is suitable for performing thin film deposition on wafers. Taking conventional Chemical Vapor Deposition (CVD) as an example, the Chemical Vapor Deposition heats one or more gases (referred to as precursors) to decompose them, generating reaction products, and depositing them on the wafer surface to form the desired thin film.

[0040] The process chamber 10 includes a sealed chamber with side walls, and a workpiece carrier 11 is disposed in the central region of the sealed chamber.

[0041] A top cover is provided at the upper part of the process chamber 10, and a showerhead or a showerhead assembly 101 facing the workpiece carrier 11 is provided on the top cover for spraying reaction gas onto the workpiece carrier 11.

[0042] The showerhead or the showerhead assembly 101 is connected to at least one intake device for delivering reaction gas into the process chamber 10. Each intake device includes an intake pipeline and a reaction gas source and a gas source valve provided on the intake pipeline. For Figure 1 example, the first intake device includes a first intake pipeline and a first reaction gas source GS1 and a first gas source valve V1 provided on the first intake pipeline; the second intake device includes a second intake pipeline and a second reaction gas source GS2 and a second gas source valve V2 provided on the second intake pipeline;...; the nth intake device includes an nth intake pipeline and an nth reaction gas source GSn and an nth gas source valve Vn provided on the nth intake pipeline. Wherein, the reaction gas that the reaction gas source can provide includes but is not limited to silane (SiH4), methane (CH4), ammonia (NH3), oxygen (O2), nitrogen (N2), etc.

[0043] In addition, an intake main valve is provided between the multi-channel intake device and the process chamber, that is, as Figure 1 shown, an intake main valve Vin is also provided between the multi-channel intake device and the showerhead or the showerhead assembly 101.

[0044] An inlet / outlet port may be opened on the side wall of the process chamber 10, and relevant workpieces can be transferred by using the inlet / outlet port. The workpieces include but are not limited to wafers, etc. Generally, a first slit valve is provided at the inlet / outlet port, and the first slit valve can move in the up-down direction or the left-right direction relative to the inlet / outlet port.

[0045] The workpiece carrier is disposed in the process chamber for carrying semiconductor wafers. As Figure 1 shown, the workpiece carrier 11 is disposed in the process chamber 10 for carrying the wafer 100. In some embodiments, a thin film deposition process is only performed on one wafer at a time in the process chamber 10. Therefore, the workpiece carrier 11 is located at the central position of the process chamber 10.

[0046] In some embodiments, a wafer adsorption structure for adsorbing the wafer 100 is further provided on the workpiece carrier 11. Exemplarily, the wafer adsorption structure may, for example, include an adsorption groove and an adsorption pump.

[0047] In some embodiments, the workpiece carrier 11 may also be provided with a heating device (not shown in the figures) for heating the carried wafer 100 to a desired temperature.

[0048] In some embodiments, the sidewall surface and the top cover surface of the process chamber 10 may be coated with a high-reflection film or polished to reflect the thermal radiation heated by the heating device back to the surface of the workpiece carrier 11 and the wafer 100 carried thereon.

[0049] In some embodiments, the workpiece carrier 11 may be associated with a moving member 12. By using the moving member 12, the workpiece carrier 11 can be driven to move. Exemplarily, the moving member 12 may be, for example, a lifting member that can drive the workpiece carrier 11 and the wafer 100 carried thereon to move up and down.

[0050] In some embodiments, the carrier 11 may also be associated with a rotating device. The rotating device may include a selected rotating member and a rotating power mechanism. The rotating member may be hermetically arranged with the workpiece carrier 11 and the process chamber 10. Through the selected power mechanism, the rotating member and the associated workpiece carrier 11 and the wafer 100 carried thereon can be driven to rotate reciprocally, enabling the deposition of the thin film on the wafer 100 to be more uniform.

[0051] The exhaust device is used to extract the reaction gas in the process chamber. As Figure 1 shown, the exhaust device includes an exhaust pipeline connected to the process chamber 10 and an exhaust valve assembly 13 and an exhaust pump 14 provided on the exhaust pipeline.

[0052] In some embodiments, the exhaust valve assembly 13 includes an exhaust valve.

[0053] In some embodiments, the exhaust valve assembly 13 includes a combination of an exhaust valve and a throttle valve. Exemplarily, the exhaust valve may be, for example, an ordinary exhaust valve. Exemplarily, the exhaust valve may be, for example, a combination of a quick exhaust valve and a slow exhaust valve, wherein the slow exhaust valve is used to establish an initial vacuum environment, and the quick exhaust valve is used to more quickly discharge the remaining gas to achieve a lower vacuum degree. The throttle valve may be, for example, a butterfly valve that can achieve an opening degree of 0% to 100%.

[0054] When depositing a thin film on a wafer, the wafer can be fed into the process chamber and placed on the workpiece carrier, heated and kept warm, and the corresponding reaction gas is introduced into the process chamber through a multi-channel gas inlet device to deposit the required thin film on the surface of the wafer. At the same time, according to the requirements of the process, the workpiece carrier and the wafer carried thereon are driven to move up and down by a lifting member to move to different positions.

[0055] Please refer to Figure 2, which shows a schematic flow chart of the leak detection method for the process chamber provided by the present disclosure in an embodiment.

[0056] Step S201, close the main intake valve, open the exhaust valve assembly in the exhaust device, and start the exhaust pump so that the process chamber enters the exhaust mode to perform exhaust.

[0057] In step S201, by closing the main intake valve, opening the exhaust valve assembly in the exhaust device, and starting the exhaust pump, the gas in the intake pipe section from the main intake valve to the process chamber and the gas in the process chamber can be evacuated.

[0058] In some embodiments, the exhaust time can be set, and the exhaust device exhausts according to the exhaust time. After continuously exhausting and reaching the exhaust time, the exhaust pump is closed and the exhaust stops. Exemplarily, the exhaust time can be, for example, dozens of seconds or several minutes, such as 30 seconds, 45 seconds, 60 seconds, 75 seconds, 90 seconds, 120 seconds, etc.

[0059] Combined with Figure 1 , in step S201, close the main intake valve Vin, open the exhaust valve assembly 13 in the exhaust device, and start the exhaust pump 14 so that the process chamber 10 enters the exhaust mode to perform exhaust. That is, the gas in the intake pipe section from the main intake valve Vin to the process chamber 10 and the gas in the process chamber 10 are evacuated (specifically, refer to Figure 3 , in Figure 3 , the closing of the main intake valve Vin can be represented by "×", and the opening of the exhaust valve assembly 13 can be represented by "√").

[0060] Step S203, close the main intake valve, close the exhaust valve assembly in the exhaust device, so that the process chamber enters the degassing mode to perform degassing; after completing degassing, detect the initial pressure of the process chamber.

[0061] In step S203, by closing the main intake valve and closing the exhaust valve assembly in the exhaust device, a closed space is formed in the process chamber and it enters the degassing mode to perform degassing. After completing degassing, detect the initial pressure of the process chamber.

[0062] In some embodiments, the degassing time can be set, and degassing can be performed according to the degassing time. After continuously degassing and reaching the degassing time, degassing stops, and the initial pressure of the process chamber is detected. Exemplarily, the degassing time can be, for example, dozens of seconds or several minutes, such as 30 seconds, 45 seconds, 60 seconds, 75 seconds, 90 seconds, 120 seconds, etc.

[0063] In some embodiments, detecting the initial pressure of the process chamber can be achieved through a pressure gauge associated with the process chamber.

[0064] Combined withFigure 1 In step S203, the intake main valve Vin is closed, and the exhaust valve assembly 13 in the exhaust device is closed, so that the process chamber 10 forms a sealed space, and degassing is carried out in the sealed space. After a period of degassing time, the degassing is stopped, and the initial pressure P0 of the process chamber is detected by the pressure gauge 15 (specifically, refer to Figure 4 In Figure 4 , the closing of the intake main valve Vin can be represented by "×", and the closing of the exhaust valve assembly 13 can be represented by "×").

[0065] Step S205: Close the intake main valve and the exhaust valve assembly in the exhaust device, so that the process chamber enters the leak detection mode. The workpiece carrier device is moved to multiple leak detection positions by the moving part, and the leak detection pressure of the process chamber at each leak detection position within the corresponding leak detection time is detected.

[0066] In step S203, the intake main valve is closed, and the exhaust valve assembly in the exhaust device is closed, so that the process chamber forms a sealed space and enters the leak detection mode. The moving part moves the workpiece carrier device to multiple leak detection positions, and the leak detection pressure of the process chamber at each leak detection position within the corresponding leak detection time is detected.

[0067] In some embodiments, the number of the detection positions is multiple. The workpiece carrier device is moved to different detection positions by the moving part, and the leak detection pressure of the process chamber at different detection positions within the corresponding detection time is detected. According to the multiple detection pressures, it is determined whether there is a leak in the process chamber.

[0068] In some embodiments, for each position movement, a leak detection time can be set. After a leak detection time elapses, the leak detection pressure of the process chamber is detected. Exemplarily, the leak detection time can be, for example, dozens of seconds or several minutes, such as 30 seconds, 45 seconds, 60 seconds, 75 seconds, 90 seconds, 120 seconds, etc.

[0069] In some embodiments, detecting the leak detection pressure of the process chamber at each leak detection position within the corresponding leak detection time can be achieved by a pressure gauge associated with the process chamber.

[0070] Combined with Figure 1, taking the moving part as the lifting part as an example, it may include multiple detection positions, and these detection positions may include an upper limit position, a lower limit position, and at least one interval position between the upper limit position and the lower limit position. Among them, the upper limit position refers to the highest position where the lifting part drives the workpiece carrying device to rise, and the lower limit position refers to the lowest position where the lifting part drives the workpiece carrying device to descend. In this way, the workpiece carrying device can be lifted to the upper limit position, the lower limit position, and at least one interval position by the lifting part, and the leak detection pressure of the process chamber can be detected at each leak detection position within the corresponding leak detection time.

[0071] In some embodiments, lifting the workpiece carrying device to the upper limit position, the lower limit position, and at least one interval position by the lifting part includes any one of the following:

[0072] Exemplarily, first lift the workpiece carrying device to the upper limit position by the lifting part, then lower the workpiece carrying device to the lower limit position by the lifting part, and then lift the workpiece carrying device to at least one interval position by the lifting part. In addition, if there are multiple interval positions, transfer between the multiple interval positions in sequence. For example, starting from an interval position closest to the lower limit position, rise in sequence until reaching an interval position closest to the upper limit position.

[0073] Exemplarily, first lift the workpiece carrying device to the upper limit position by the lifting part, then lower the workpiece carrying device to at least one interval position by the lifting part, and then lower the workpiece carrying device to the lower limit position by the lifting part. In addition, if there are multiple interval positions, transfer between the multiple interval positions in sequence. For example, starting from an interval position closest to the upper limit position, descend in sequence until reaching an interval position closest to the lower limit position.

[0074] Exemplarily, first lower the workpiece carrying device to the lower limit position by the lifting part, then lift the workpiece carrying device to the upper limit position by the lifting part, and then lower the workpiece carrying device to at least one interval position by the lifting part. In addition, if there are multiple interval positions, transfer between the multiple interval positions in sequence. For example, starting from an interval position closest to the upper limit position, descend in sequence until reaching an interval position closest to the lower limit position.

[0075] Exemplarily, first lower the workpiece carrying device to the lower limit position by the lifting part, then lift the workpiece carrying device to at least one interval position by the lifting part, and then lift the workpiece carrying device to the upper limit position by the lifting part. In addition, if there are multiple interval positions, transfer between the multiple interval positions in sequence. For example, starting from an interval position closest to the lower limit position, rise in sequence until reaching an interval position closest to the upper limit position.

[0076] Combined withFigure 1 , taking the detection position including an upper limit position, a lower limit position, and an interval position between the upper limit position and the lower limit position as an example, illustratively, the interval position may be located in the middle between the upper limit position and the lower limit position, and therefore, the middle position may also be referred to as the center position.

[0077] After the process chamber enters the leakage detection mode, the workpiece carrier 11 is first raised to the upper limit position by the lifting component as the moving component 12, and the first leakage detection pressure P1 of the process chamber 10 is detected within the corresponding first leakage detection time T1 at the upper limit position (for details, please refer to Figure 5 ,exist Figure 5 In the figure, the closing of the main intake valve Vin can be represented by “×”, and the closing of the exhaust valve assembly 13 can be represented by “×”).

[0078] Then, the workpiece carrier 11 is lowered to the center position by the lifting component as the moving component 12, and the second leak detection pressure P2 of the process chamber 10 at the center position is detected within the corresponding second leak detection time T2 (for details, please refer to Figure 6 ,exist Figure 6 In the figure, the closing of the main intake valve Vin can be represented by “×”, and the closing of the exhaust valve assembly 13 can be represented by “×”).

[0079] Then, the workpiece carrier 11 is lowered to the lower limit position by the lifting component as the moving component 12, and the third leak detection pressure P3 of the process chamber 10 in the corresponding third leak detection time T3 at the lower limit position is detected (for details, please refer to Figure 7 ,exist Figure 7 In the figure, the closing of the main intake valve Vin can be represented by “×”, and the closing of the exhaust valve assembly 13 can be represented by “×”).

[0080] Of course, the lifting sequence of the workpiece carrying device 11 at the upper limit position, the lower limit position, and the middle position driven by the lifting component as the moving component 12 may have other variations, which will not be described in detail here.

[0081] In addition, regarding detecting the leak detection pressure of the process chamber at the leak detection position within the corresponding detection time, multiple implementation methods may also be included.

[0082] In certain implementations, the workpiece carrier is moved to the leak detection position by a moving component, and after a corresponding leak detection time has passed, the leak detection pressure of the process chamber is detected.

[0083] Taking the above-mentioned detection positions including the upper limit position, the lower limit position, and the center position as an example, the workpiece carrier 11 is first raised to the upper limit position by the lifting component serving as the movable component 12. After the first leak detection time T1 is maintained, the first leak detection pressure P1 of the process chamber 10 at the upper limit position is detected.

[0084] Then, the workpiece carrying device 11 is lowered to the centered position by the lifting member serving as the moving member 12, and after the second leak detection time T2 elapses, the second leak detection pressure P2 of the process chamber 10 at the centered position is detected.

[0085] After that, the workpiece carrying device 11 is lowered to the lower limit position by the lifting member serving as the moving member 12, and after the third leak detection time T3 elapses, the third leak detection pressure P3 of the process chamber 10 at the lower limit position is detected.

[0086] Of course, the lifting sequence of the workpiece carrying device 11 by the lifting member serving as the moving member 12 at the upper limit position, the lower limit position, and the centered position can have other variations, which will not be elaborated here.

[0087] In some implementations, the workpiece carrying device is uniformly moved to the leak detection position by the moving member within the corresponding leak detection time, and the leak detection pressure of the process chamber is detected when reaching the leak detection position.

[0088] Taking the above-mentioned detection positions including the upper limit position, the lower limit position, and the centered position as an example, first, the workpiece carrying device 11 is raised to the upper limit position by the lifting member serving as the moving member 12 within the first leak detection time T1, and the first leak detection pressure P1 of the process chamber 10 at the upper limit position is detected when reaching the upper limit position.

[0089] Then, the workpiece carrying device 11 is lowered to the centered position by the lifting member serving as the moving member 12 within the second leak detection time T2, and the second leak detection pressure P2 of the process chamber 10 at the centered position is detected when reaching the centered position.

[0090] After that, the workpiece carrying device 11 is lowered to the lower limit position by the lifting member serving as the moving member 12 within the third leak detection time T3, and the third leak detection pressure P3 of the process chamber 10 at the lower limit position is detected when reaching the lower limit position.

[0091] Of course, the lifting sequence of the workpiece carrying device 11 by the lifting member serving as the moving member 12 at the upper limit position, the lower limit position, and the centered position can have other variations, which will not be elaborated here.

[0092] Through the above step S205, the workpiece carrying device is moved to multiple leak detection positions by the moving member, and the leak detection pressure of the process chamber at each leak detection position within the corresponding leak detection time is detected.

[0093] Step S207: Determine whether there is a leak in the process chamber and whether there is a leak defect in the moving member according to the detected initial pressure and multiple leak detection pressures of the process chamber.

[0094] In step S207, according to the respective leak detection pressures and corresponding leak detection times of the process chamber detected in step S205, the corresponding leak rates are calculated, and based on this, it is determined whether there is a leak in the process chamber and whether there is a leak defect in the moving part.

[0095] In some embodiments, according to the initial pressure of the detected process chamber and multiple leak detection pressures, it is determined whether there is a leak in the process chamber and whether there is a leak defect in the moving part. It may further include the following steps:

[0096] First, according to the initial pressure of the detected process chamber and multiple leak detection pressures, calculate the segmented leak rate within a single leak detection time for each change in the detection position; the segmented leak rate is the ratio of the pressure difference corresponding before and after each change in the detection position to the leak detection time.

[0097] Among them, calculating the segmented leak rate within a single leak detection time for each change in the detection position is specifically the ratio of the pressure difference corresponding before and after the current change in the detection position to the corresponding leak detection time.

[0098] Taking the above detection positions including the upper limit position, the lower limit position, and the middle position as an example, according to the initial pressure P0 (unit: mTorr, millitorr) of the detected process chamber and the first detection pressure P1 (unit: mTorr, millitorr) at the upper limit position, calculate the ratio (P1 - P0) of the pressure difference before and after moving from the initial position to the upper limit position to the corresponding leak detection time T1 (unit: min, minute), (P1 - P0) / T1, as the first segmented leak rate S1, that is, the first segmented leak rate S1 = (P1 - P0) / T1 mTorr / min.

[0099] Similarly, according to the first detection pressure P1 at the upper limit position of the detected process chamber and the second detection pressure P2 (unit: mTorr, millitorr) at the middle position, calculate the ratio (P2 - P1) of the pressure difference before and after moving from the upper limit position to the middle position to the corresponding leak detection time T2 (unit: min, minute), (P2 - P1) / T2, as the second segmented leak rate S2, that is, the second segmented leak rate S2 = (P2 - P1) / T2 mTorr / min.

[0100] Similarly, according to the second detection pressure P2 at the middle position of the detected process chamber and the third detection pressure P3 (unit: mTorr, millitorr) at the lower limit position, calculate the ratio (P3 - P2) of the pressure difference before and after moving from the middle position to the lower limit position to the corresponding leak detection time T3 (unit: min, minute), (P3 - P2) / T3, as the third segmented leak rate S3, that is, the third segmented leak rate S3 = (P3 - P2) / T3 mTorr / min.

[0101] In some embodiments, it further includes calculating the overall leakage rate of the change in the initial position corresponding to the initial pressure and the final position corresponding to the last leak detection pressure within the total leak detection time. The overall leakage rate is the ratio of the difference between the last leak detection pressure and the initial pressure corresponding to the change in the detection position before and after to the total leak detection time. Specifically, taking the above detection positions including the upper limit position, the lower limit position, and the middle position as an example, according to the initial pressure P0 of the process chamber at the initial position and the third detection pressure P3 at the lower limit position detected, calculate the ratio (P3 - P0) of the pressure difference (P3 - P0) before and after moving from the initial position to the lower limit position to the corresponding leak detection time T1 + T2 + T3 (unit: min, minute), i.e., (P3 - P0) / (T1 + T2 + T3), as the overall leakage rate S, that is, the overall leakage rate S = (P3 - P0) / (T1 + T2 + T3) mTorr / min.

[0102] Next, compare each calculated segment leakage rate with the set leakage threshold, and when any one of the segment leakage rates is greater than or equal to the leakage threshold, it is determined that there is a leak in the process chamber.

[0103] The leakage threshold can be set according to the requirements of the relevant gases involved in the semiconductor process. For example, in some embodiments, the leakage threshold S th can be set to 4 mTorr / min (millitorr per minute) to 6 mTorr / min (millitorr per minute), for example, 5 mTorr / min (millitorr per minute).

[0104] Compare each calculated segment leakage rate with the set leakage threshold respectively to determine whether there is a leak in the process chamber.

[0105] In some embodiments, when any one of the segment leakage rates is greater than or equal to the leakage threshold, it can be determined that there is a leak in the process chamber, that is, as long as there is one segment leakage rate greater than or equal to the leakage threshold, it can be determined that there is a leak in the process chamber.

[0106] Taking the above detection positions including the upper limit position, the lower limit position, and the middle position as an example, compare the first segment leakage rate S1 = (P1 - P0) / T1 with the leakage threshold S th make a comparison, compare the second segment leakage rate S2 = (P2 - P1) / T2 with the leakage threshold S th make a comparison, compare the third segment leakage rate S3 = (P3 - P2) / T3 with the leakage threshold S th make a comparison, when any one of the segment leakage rates S1, S2, or S3 is greater than or equal to the leakage threshold S th at this time, it can be determined that there is a leak in the process chamber. Exemplarily, the segment leakage rate S1 is greater than or equal to the leakage threshold S thAnd the segmented leakage rates S2 and S3 are both less than the leakage threshold S th or the segmented leakage rate S2 is greater than or equal to the leakage threshold S th and the segmented leakage rates S1 and S3 are both less than the leakage threshold S th or the segmented leakage rate S3 is greater than or equal to the leakage threshold S th and the segmented leakage rates S1 and S2 are both less than the leakage threshold S th it is determined that there is a leak in the process chamber. Exemplarily, the segmented leakage rates S1 and S2 are both greater than or equal to the leakage threshold S th and the segmented leakage rate S3 is less than the leakage threshold S th or the segmented leakage rates S2 and S3 are both greater than or equal to the leakage threshold S th and the segmented leakage rate S1 is less than the leakage threshold S th or the segmented leakage rates S1 and S3 are both greater than or equal to the leakage threshold S th and the segmented leakage rate S2 is less than the leakage threshold S th it is determined that there is a leak in the process chamber. Exemplarily, the segmented leakage rates S1, S2, and S3 are all greater than or equal to the leakage threshold S th it is determined that there is a leak in the process chamber.

[0107] It should be noted that in the case of the overall leakage rate calculated above, the calculated overall leakage rate can be compared with the set leakage threshold, and when the overall leakage rate is greater than or equal to the leakage threshold, it is determined that there is a leak in the process chamber. That is, comparing the overall leakage rate S = (P3 - P0) / (T1 + T2 + T3) with the leakage threshold S th when the overall leakage rate S is greater than or equal to the leakage threshold S th it can be determined that there is a leak in the process chamber.

[0108] In addition, it is judged whether the segmented leakage rates are the same. If it is determined that there is a leak in the process chamber and there are at least two segmented leakage rates that are different, it proves that the leakage rates of the process chamber caused by the workpiece carrier device at different positions are different, and the leakage rate is strongly related to the position of the moving part. Then, it is very likely that the different leakage rates are caused by the moving part. Therefore, it can be determined that the moving part has a leakage defect.

[0109] Taking the above detection positions including the upper limit position, the lower limit position, and the middle position as an example: If as long as one of the first segmented leakage rate S1, the second segmented leakage rate S2, and the third segmented leakage rate S3 is greater than or equal to the leakage threshold S thMoreover, if at least two of the first-stage leakage rate S1, the second-stage leakage rate S2, and the third-stage leakage rate S3 are different (i.e., excluding the case where S1, S2, and S3 are all the same), it can be determined that there is a leakage defect in the lifting component as the moving component.

[0110] In addition, in the case of the overall leakage rate calculated above, the overall leakage rate can be used as a reference.

[0111] Subsequently, the moving component determined to have a leakage defect can be repaired or replaced.

[0112] The present disclosure provides a leak detection method for a process chamber. First, the process chamber is evacuated, and then degassing is performed on the sealed space formed by the process chamber. After degassing is completed, the workpiece carrier device is moved to multiple leak detection positions by a moving component, and the leak detection pressure of the process chamber at each leak detection position within the corresponding leak detection time is detected to perform leak detection, thereby determining whether there is a leak in the process chamber and whether there is a leak defect in the moving component. Compared with the related art, the leak detection method for the process chamber provided by the present disclosure has a simple process, does not affect the semiconductor process, has accurate detection, and can timely repair or replace the moving component detected to have a leak defect, ensuring compliance with the airtightness requirements of the process chamber, being more conducive to the subsequent semiconductor wafer manufacturing process, and improving the yield.

[0113] The present disclosure also provides a control device. In some embodiments, the control device can be, for example, a host computer, and the host computer is connected to at least one intake device, an intake main valve, an exhaust device, etc.

[0114] Please refer to Figure 8 , which shows the principle block diagram of the control device provided by the present disclosure in an embodiment.

[0115] As Figure 8 shown, the control device 8 includes a processor 81 and a memory 83. Communication can be carried out between the processor 81 and the memory 83 through a bus 82. A leak detection program for the process chamber can be stored in the memory 83. The processor 81 executes each step in the leak detection method for the process chamber by running the internal leak detection program in the memory 83.

[0116] The bus 82 can be a Peripheral Component Interconnect (PCI) bus, an Extended Industry Standard Architecture (EISA) bus, or the like. The bus can be divided into an address bus, a data bus, a control bus, etc. For ease of representation, although only a thick line is used in the figure, it does not mean that there is only one bus or one type of bus.

[0117] In some embodiments, the processor 81 can be implemented as a Central Processing Unit (CPU), a Micro Controller Unit (MCU), a System on Chip (SoC), or a Field Programmable Gate Array (FPGA), etc. The memory 83 can include volatile memory for temporarily storing data when running a program, such as Random Access Memory (RAM). The memory 83 can also include non-volatile memory (Non-Volatile Memory; NVM) for data storage, such as Read-Only Memory (ROM), flash memory, a Hard Disk Drive (HDD), or a Solid-State Disk (SSD).

[0118] In practical applications, the control device can be associated with at least one intake device, an intake main valve, an exhaust device, etc., and is used to control each component in the intake device, the intake main valve, and each component in the exhaust device, so as to complete the internal leakage detection of the mass flow controller, determine whether there is internal leakage in each mass flow controller, and repair or replace the mass flow controller with internal leakage, ensuring the accuracy of gas flow control, which is more beneficial to the subsequent semiconductor wafer manufacturing process and improves the yield.

[0119] An embodiment of the present disclosure can also provide a computer-readable storage medium storing a computer program or instructions, and when the computer program or instructions are run, the method flow or function in any previous embodiment is implemented.

[0120] That is, the method steps in the above embodiments are implemented as software or computer code that can be stored in a recording medium (such as a CD ROM, RAM, floppy disk, hard disk, or magneto-optical disk), or as computer code that is originally stored in a remote recording medium or a non-transitory machine-readable medium and downloaded through a network and will be stored in a local recording medium, so that the method represented herein can be stored on such a software process on a recording medium using a general-purpose computer, a dedicated processor, or programmable or dedicated hardware (such as an ASIC or FPGA).

[0121] In an embodiment of the present disclosure, a computer program product may also be provided. Multiple computer programs or instructions, when run, fully or partially execute the processes or functions in the embodiments of the present disclosure. The computer program product includes multiple computer programs or instructions.

[0122] The computer program or instructions may be stored in a readable storage medium, or transmitted from one readable storage medium to another readable storage medium. For example, the computer program or instructions may be transmitted from one website, computer, server, or data center to another website, computer, server, or data center in a wired or wireless manner. The readable storage medium may be any available medium that can be accessed or a data storage device such as a server or data center that integrates multiple available media. The available medium may be a magnetic medium, such as a floppy disk, hard disk, or magnetic tape; it may also be an optical medium, such as a digital video disc; or it may be a semiconductor medium, such as a solid-state drive. The computer-readable storage medium may be a volatile or non-volatile storage medium, or may include both volatile and non-volatile types of storage media.

[0123] The above embodiments are only illustrative of the principles and effects of the present disclosure, and are not used to limit the present disclosure. Any person familiar with this technology can modify or change the above embodiments without departing from the spirit and scope of the present disclosure. Therefore, all equivalent modifications or changes made by those with ordinary knowledge in the technical field without departing from the spirit and technical ideas disclosed by the present disclosure should still be covered by the protection scope of the present disclosure.

Claims

1. A leak detection method for a process chamber, characterized in that: Applied to semiconductor process equipment, the semiconductor process equipment includes a process chamber, a workpiece carrying device, a moving component, at least one air intake device, and an exhaust device, the moving component is a lifting component, an air intake main valve is provided between the at least one air intake device and the process chamber, the exhaust device includes an exhaust pipeline and an exhaust valve assembly and an exhaust pump provided on the exhaust pipeline; the leak detection method of the process chamber includes the following steps: Close the main air inlet valve, open the exhaust valve assembly in the exhaust device, start the exhaust pump, and put the process chamber into exhaust mode to implement exhaust; The main air inlet valve is closed, and the exhaust valve assembly in the exhaust device is closed, so that the process chamber enters the degassing mode to implement degassing; after the degassing is completed, the initial pressure of the process chamber is detected; The main air inlet valve is closed, and the exhaust valve assembly in the exhaust device is closed, so that the process chamber enters the leak detection mode, and the workpiece carrier device is driven to rise and fall to multiple leak detection positions by the lifting component, and the leak detection pressure of the process chamber at each leak detection position within the corresponding leak detection time is detected; as well as Determine whether there is leakage in the process chamber and whether there is leakage defect in the lifting component according to the detected initial pressure of the process chamber and multiple leak detection pressures; Among them, judging whether there is leakage in the process chamber and whether there is leakage defect in the lifting component according to the detected initial pressure of the process chamber and multiple leak detection pressures includes the following steps: calculating the segmented leakage rate of each detection position change within a single leak detection time according to the detected initial pressure of the process chamber and multiple leak detection pressures; the segmented leakage rate is the ratio of the pressure difference corresponding to each detection position change before and after the leak detection time; comparing each calculated segmented leakage rate with a set leakage threshold, and when any segmented leakage rate is greater than or equal to the leakage threshold, judging that there is leakage in the process chamber; when judging that there is leakage in the process chamber and there are at least two segmented leakage rates that are different, judging that there is leakage defect in the lifting component.

2. The process chamber leak detection method according to claim 1, characterized in that: The workpiece-carrying device is lifted to a plurality of leak detection positions by means of a lifting component, and the leak detection pressure of the process chamber at each leak detection position is detected within a corresponding leak detection time, including: in accordance with a lifting sequence, the workpiece-carrying device is lifted to new leak detection positions by means of a lifting component in sequence, and the leak detection pressure of the process chamber at the new leak detection position is detected within a corresponding leak detection time, to obtain a corresponding number of multiple leak detection pressures.

3. The process chamber leak detection method according to claim 1 or 2, characterized in that: For any leak detection position, detecting the leak detection pressure of the process chamber at the leak detection position within the corresponding leak detection time includes the following methods: The workpiece carrying device is lifted to the leak detection position by the lifting component, and after the corresponding leak detection time is continued, the leak detection pressure of the process chamber is detected; or The workpiece carrying device is lifted and lowered uniformly to the leak detection position within the corresponding leak detection time by the lifting component, and the leak detection pressure of the process chamber is detected when the leak detection position is reached.

4. The process chamber leak detection method according to claim 1, characterized in that: The detection position includes an upper limit position, a lower limit position, and at least one interval position between the upper limit position and the lower limit position, wherein the upper limit position refers to the highest position of the workpiece bearing device when it rises, and the lower limit position refers to the lowest position of the workpiece bearing device when it descends; The method of lifting the workpiece carrier to a plurality of leak detection positions by means of a lifting component and detecting the leak detection pressure of the process chamber at each leak detection position within a corresponding leak detection time comprises: lifting the workpiece carrier to an upper limit position, a lower limit position, and at least one interval position by means of a lifting component and detecting the leak detection pressure of the process chamber at each leak detection position within a corresponding leak detection time.

5. The process chamber leak detection method according to claim 4, characterized in that: The lifting of the workpiece bearing device to the upper limit position, the lower limit position, and at least one interval position by the lifting component includes any of the following: Firstly, the workpiece bearing device is raised to the upper limit position by the lifting component, then the workpiece bearing device is lowered to the lower limit position by the lifting component, and finally the workpiece bearing device is raised to at least one interval position by the lifting component; Firstly, the workpiece bearing device is raised to the upper limit position by the lifting component, then the workpiece bearing device is lowered to at least one interval position by the lifting component, and finally the workpiece bearing device is lowered to the lower limit position by the lifting component; Firstly, the workpiece bearing device is lowered to the lower limit position by the lifting component, then the workpiece bearing device is raised to the upper limit position by the lifting component, and finally the workpiece bearing device is lowered to at least one interval position by the lifting component; as well as The workpiece bearing device is firstly lowered to the lower limit position by the lifting component, then raised to at least one interval position by the lifting component, and finally raised to the upper limit position by the lifting component.

6. The process chamber leak detection method according to claim 1, characterized in that: The starting of the exhaust pump to implement exhaust includes: starting the exhaust pump to exhaust; after continuing for a certain exhaust time, turning off the exhaust pump to stop exhausting; after completing degassing, detecting the initial pressure of the process chamber includes: implementing degassing, after continuing for a certain degassing time, ending the degassing, and detecting the initial pressure of the process chamber.

7. A control device, characterized in that: include: processor; A memory storing a leak detection program of the process chamber; Wherein, when the leak detection program of the process chamber is executed by the processor, the leak detection method of the process chamber according to any one of claims 1 to 6 is executed.

8. A computer-readable storage medium having a process chamber leak detection program stored thereon, characterized in that: When the leak detection program of the process chamber is executed by the processor, the leak detection method of the process chamber according to any one of claims 1 to 6 is implemented.

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