Wafer defect detection device, method and equipment and computer readable storage medium

Abstract

The invention relates to the technical field of semiconductor detection, and discloses a wafer defect detection device, method and equipment and a computer readable storage medium. The invention provides a wafer defect detection device, which comprises a wafer box module, a wafer moving module, an edge searching module and a defect detection module, and is characterized in that the wafer moving module comprises an adsorption moving unit and a position detection unit, and the position detection unit is used for detecting the wafer placement position in the wafer box module; the adsorption moving unit is used for adsorbing a wafer in the wafer box module to move to the edge searching module and moving to the defect detection module from the edge searching module, the defect detection module comprises a standard detection module and an amplification detection module, and the standard detection module is used for detecting defects on the surface of the wafer and determining a defect area to be amplified; and the amplification detection module is used for defect detection of the defect area to be amplified.

Description

Technical Field

[0001] The present invention belongs to the field of semiconductor detection technology, and in particular relates to a wafer defect detection device, method, equipment and computer-readable storage medium. Background Art

[0002] At present, in the process of wafer processing and manufacturing, various defects will inevitably appear on the surface. Wafer surface defect detection is generally carried out by manually visually inspecting the wafer image. By observing the wafer image, it is judged whether the wafer has defects and the type of defects that exist is evaluated. This method of manual defect detection is inevitably affected by personal subjective factors, and as the workload increases, it will lead to problems such as low detection accuracy, low detection efficiency and high labor costs. The existing technology uses relevant detection devices to detect common planar defects such as scratches on the wafer surface, but some minor defects or special defect types cannot be directly presented by the detection device, such as pits, surface particles and three-dimensional structural defects, which will lead to a decrease in wafer quality and affect subsequent processing and manufacturing.

[0003] In order to solve the above technical problems, the present invention designs a wafer defect detection device, method, equipment and computer-readable storage medium. Summary of the invention

[0004] To solve the above problems, the present invention provides the following technical solutions: a wafer defect detection device, comprising a wafer box module, a wafer moving module, an edge-finding module and a defect detection module, the wafer moving module comprising an adsorption moving unit and a position detection unit, the position detection unit being used to detect the wafer placement position in the wafer box module, the adsorption moving unit being used to adsorb the wafer in the wafer box module and move it to the edge-finding module and from the edge-finding module to the defect detection module, the defect detection module comprising a standard detection module and an amplification detection module, the standard detection module being used to detect defects on the wafer surface and determine defect areas to be amplified, the amplification detection module being used for defect detection in defect areas to be amplified.

[0005] Based on the above technical solution, the standard detection module includes a first light source, a first camera, a first lens and a first wafer loading table, the first camera, the first lens and the first wafer loading table are arranged in sequence, the first light source is arranged between the first camera and the first lens, the first camera can move in a direction close to or away from the first lens, the first camera includes a first lens and a second lens, the magnification of the second lens is greater than the magnification of the first lens, the side of the first lens close to the first camera is a plane, and the side of the first lens close to the first wafer loading table is a convex surface.

[0006] Based on the above technical solution, the amplification detection module includes a second light source, a beam splitter, a second camera, a second lens, a third lens and a second wafer loading table. The second camera, the beam splitter, the second lens, the third lens and the second wafer loading table are arranged in sequence. The second light source is arranged between the second camera and the second lens. The second camera can move in a direction close to or away from the second lens. The side of the second lens close to the second camera is a plane, the side of the second lens close to the third lens is a convex surface, and the third lens is a plane flat crystal.

[0007] Specifically, the adsorption movement unit includes a first adsorption arm and a second adsorption arm, which are arranged in the up and down directions. The position detection unit includes a first subunit and a second subunit, which are arranged opposite to the first adsorption arm and the second adsorption arm respectively.

[0008] Furthermore, the wafer moving module also includes a base and a base moving slide rail, the adsorption moving unit is arranged on the base, the base is arranged on the base moving slide rail, and the base moving slide rail extends in a direction close to the edge finding module.

[0009] In a second aspect, the present invention provides a wafer defect detection method, which is applied to a wafer defect detection device as described in any one of the above embodiments, comprising the following steps: S1, controlling the position detection unit to scan the cassette module to obtain the position of the wafer to be detected in the cassette module; S2, controlling the adsorption moving unit to adsorb the wafer and move it to the edge finding module to position and correct the eccentricity of the wafer; S3, controlling the adsorption moving unit to adsorb the wafer and move it to the standard inspection module, performing preliminary defect inspection on the wafer, and obtaining defect information of the defect area of ​​the wafer, wherein the defect information includes defect location, defect type and defect quantity; S4, determining whether a high magnification detection is required for the defective area of ​​the wafer, and if the high magnification detection is not required, controlling the adsorption moving unit to adsorb the wafer and move it back to the preset position of the cassette module; S5, when high magnification detection is required, determining the defect position to be magnified in the defect area of ​​the wafer that needs to be detected with high magnification according to the defect information obtained in step S3, controlling the adsorption moving unit to adsorb the wafer and move it to the magnification detection module, and performing high magnification detection on the defect position to be magnified; S6, after the inspection is completed, the adsorption moving unit is used to adsorb the wafer and move it back to the preset position in the cassette module.

[0010] Specifically, step S5 includes the following steps: S5.1, when high-magnification detection is required, according to the defect information obtained in step S3, the defect position to be magnified that needs to be detected with high magnification in the defect area of ​​the wafer is determined, and the adsorption moving unit is controlled to adsorb the wafer and move it to the magnification detection module; S5.2, the standard detection surface, the first detection surface and the second detection surface of the wafer are detected by the magnification detection module, wherein the first detection surface is higher than the standard detection surface and the second detection surface is lower than the standard detection surface; S5.3, the defect detection result information of the standard detection surface, the first detection surface and the second detection surface of the wafer is analyzed to obtain the defect information of the defect position to be magnified.

[0011] Furthermore, during high magnification inspection, the wafer surface is partitioned to obtain N two-dimensional areas to ensure that all of the two-dimensional areas are clearly imaged at the same magnification, where N is a positive integer. After the inspection is completed, each two-dimensional area is labeled and the inspection result information is recorded; the wafer is positioned through the edge-finding module, and a coordinate system is established to uniquely determine the position of the two-dimensional area.

[0012] Preferably, the two-dimensional area is divided as follows: starting from the center of the wafer, M concentric circles are divided, where M is a positive integer, and non-minimum concentric circles are further divided into fan rings, and all divided fan rings have equal areas, wherein the two-dimensional area includes the minimum concentric circle and the fan ring.

[0013] In a third aspect, the present invention provides a wafer defect detection device, comprising a processor and a memory storing program instructions, wherein the processor is configured to execute a wafer defect detection method as described in any one of the above embodiments when running the program instructions.

[0014] In a fourth aspect, the present invention provides a computer-readable storage medium storing program instructions, which, when executed, are used to enable a computer to execute a wafer defect detection method as described in any one of the above embodiments.

[0015] Compared with the related art, the beneficial effects of the present invention are as follows: 1. The present invention detects wafer defects by setting a standard detection module and an amplified detection module. A specific defect area to be amplified can be selected by the standard detection module for high magnification detection. In this way, it is not necessary to maintain a high magnification state for continuous detection during the detection process of the standard detection module. It is only necessary to perform high magnification detection on the selected defect area to be amplified. Moreover, the user can choose whether to use the amplified detection module for detection according to the detection requirements. If amplified detection is not required, the speed of defect detection can be accelerated. In this way, the accuracy of defect detection can be improved while improving the efficiency of defect detection. Moreover, the position detection unit can automatically detect the position of the wafer in the cassette module, and then the adsorption and movement unit can automatically complete the wafer adsorption and movement, avoiding errors caused by staff intervention, realizing the automation of wafer defect detection, and improving the efficiency of wafer defect detection.

[0016] 2. In the process of high-magnification detection, the present invention performs detection imaging on the standard detection surface, the first detection surface and the second detection surface of the wafer for the defect position to be magnified, and obtains the defect information of the defect position to be magnified by comprehensively analyzing the imaging results of the three surfaces. Through detection in this way, not only the plane-type defects can be identified, but also the three-dimensional type defects on the wafer surface can be more clearly identified. In this way, the wafer surface defects can be detected more accurately to a certain extent, thereby improving the product quality of the wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the prior art descriptions are briefly introduced below. Obviously, the drawings described below are only one embodiment of the present invention, and for ordinary technicians in this field, other implementation drawings can be derived from the provided drawings without creative work.

[0018] Figure 1 It is a structural schematic diagram of a wafer defect detection device provided by the present invention; Figure 2 It is a structural schematic diagram and optical path diagram of a standard detection module provided by the present invention; Figure 3 It is a structural schematic diagram and optical path diagram of an amplification detection module provided by the present invention; Figure 4 The present invention provides Figure 1 An enlarged structural schematic diagram of the A portion shown; Figure 5 The present invention provides Figure 1 An enlarged structural schematic diagram of part B shown; Figure 6It is a structural schematic diagram of a film box module provided by the present invention; Figure 7 It is a structural schematic diagram of an edge-finding module provided by the present invention; Figure 8 is a structural schematic diagram of another wafer defect detection device provided by the present invention; Fig. 9 It is a flow chart of a wafer defect detection method provided by the present invention; Fig.10 It is a schematic diagram of a two-dimensional area division of a wafer surface provided by the present invention; Fig.11 is another schematic diagram of two-dimensional area division of a wafer surface provided by the present invention; Fig.12 It is a schematic diagram of a wafer defect detection device provided by the present invention.

[0019] In the figure: 1. Film box module; 11. Film box; 12. Fixing plate; 13. Stop block; 2. Wafer moving module; 21. Adsorption moving unit; 211. First adsorption arm; 212. Second adsorption arm; 213. Height adjustment table; 214. First movable arm; 215. Second movable arm; 22. Position detection unit; 221. First subunit; 222. Second subunit; 23. Base; 24. Base moving slide rail; 3. Edge finding module; 31. Edge finding sensor; 32. Camera; 33. Rotating stage; 4. Standard detection module; 41. First light source; 42. First camera; 43. First lens; 44. First wafer loading station; 5. Amplification detection module; 51. Second light source; 511. Beam splitter; 52. Second camera; 53. Second lens; 54. Third lens; 55. Second wafer loading station; 6. Housing; 61. Preparation chamber; 62. Detection chamber; 63. Feed port; 71. First ventilation module; 72. Second ventilation module; 73. Ventilation hole; 8. Display module. DETAILED DESCRIPTION

[0020] The present invention will be further described below in conjunction with the accompanying drawings and examples: Embodiments of the present invention are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and cannot be understood as limiting the present invention.

[0021] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be directly connected or indirectly connected through an intermediate medium. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0022] In the description of the present invention, it should be understood that the terms "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside" and "outside" etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present invention.

[0023] Combination Figure 1 and Figure 4 As shown, an embodiment of the present disclosure provides a wafer defect detection device, including a wafer box module 1, a wafer moving module 2, an edge-finding module 3 and a defect detection module, the wafer moving module 2 including an adsorption moving unit 21 and a position detection unit 22, the position detection unit 22 is used to detect the wafer placement position in the wafer box module 1, the adsorption moving unit 21 is used to adsorb the wafer in the wafer box module 1 and move it to the edge-finding module 3 and move it from the edge-finding module 3 to the defect detection module, the defect detection module includes a standard detection module 4 and an amplification detection module 5, the standard detection module 4 is used to detect defects on the wafer surface and determine the defect area to be amplified, the amplification detection module 5 is used for defect detection in the defect area to be amplified.

[0024] The wafer defect detection device provided by the embodiment of the present disclosure is used to detect wafer defects by setting a standard detection module 4 and an amplification detection module 5. A specific defect area to be amplified can be selected by the standard detection module 4 for high magnification detection. In this way, during the detection process of the standard detection module 4, it is not necessary to maintain a high magnification state for continuous detection. It is only necessary to perform high magnification detection on the selected defect area to be amplified. Moreover, the user can choose whether to perform the detection by the amplification detection module 5 according to the detection requirements. If the amplification detection is not required, the speed of defect detection can be accelerated. In this way, the defect detection efficiency can be improved while the accuracy of defect detection can be improved. Moreover, the position detection unit 22 can automatically detect the wafer position in the cassette module 1, and then the adsorption and movement unit 21 can automatically complete the wafer adsorption and movement, thereby avoiding errors caused by staff intervention, realizing the automation of wafer defect detection, and improving the efficiency of wafer defect detection.

[0025] On the basis of the above technical scheme, the standard detection module 4 includes a first light source 41, a first camera 42, a first lens 43 and a first wafer loading table 44, the first camera 42, the first lens 43 and the first wafer loading table 44 are arranged in sequence, the first light source 41 is arranged between the first camera 42 and the first lens 43, the first camera 42 can move in a direction close to or away from the first lens 43, the first camera 42 includes a first lens and a second lens, the magnification of the second lens is greater than the magnification of the first lens, the side of the first lens 43 close to the first camera 42 is a plane, and the side of the first lens 43 close to the first wafer loading table 44 is a convex surface.

[0026] Specifically, during the inspection process of the standard inspection module 4, the first light source 41 emits a light beam, which is irradiated to the first lens 43. The first lens 43 collimates the light beam into a parallel light beam and vertically incidents on the surface of the wafer on the first wafer loading platform 44. After being reflected from the wafer surface to the first lens 43, it is incident on the first camera 42 to complete the imaging. The specific light path transmission process is as follows: Figure 2 As shown, the wafer surface image obtained by the first camera 42 can analyze the defect situation of the wafer surface, set the judgment standard according to the actual demand, and determine the defect area to be magnified on the wafer surface that needs to be detected with high magnification according to the judgment standard. Among them, the first lens and the second lens in the first camera 42 can be switched according to the detection requirements, and the first camera 42 can be moved in a direction perpendicular to the wafer surface through the electric slide rail to change the distance between the first camera 42 and the wafer surface.

[0027] On the basis of the above technical solution, the amplification detection module 5 includes a second light source 51, a beam splitter 511, a second camera 52, a second lens 53, a third lens 54 and a second wafer loading table 55. The second camera 52, the beam splitter 511, the second lens 53, the third lens 54 and the second wafer loading table 55 are arranged in sequence. The second light source 51 is arranged between the second camera 52 and the second lens 53. The second camera 52 can move in a direction close to or away from the second lens 53. The side of the second lens 53 close to the second camera 52 is a plane, the side of the second lens 53 close to the third lens 54 is a convex surface, and the third lens 54 is a plane flat crystal.

[0028] Specifically, during the detection process of the wafer amplification detection module, the second light source 51 emits a light beam, which is divided into a first light beam and a second light beam after passing through the beam splitter 511. The first light beam is converted into a parallel light beam after passing through the second lens 53. After the parallel light beam is irradiated to the third lens 54, it is reflected back to the second lens 53 and returns to the beam splitter 511 along the original light path. The second light beam is converted into a parallel light beam after passing through the second lens 53. The parallel light beam is transmitted through the third lens 54 and irradiated to the surface of the wafer on the second wafer loading platform 55. After being reflected from the wafer surface, it passes through the third lens 54 and the second lens 53 in sequence and returns to the beam splitter 511. The specific light path transmission process is as follows: Figure 3 shown.

[0029] The first light beam and the second light beam both return to the beam splitter 511. In the case of defects on the wafer surface, the unevenness of the wafer surface will cause an optical path difference between the first light beam and the second light beam. Thus, according to the principle of light interference, when the optical path difference meets certain conditions, the two light beams will interfere to form interference fringes. If the wafer surface is an ideal plane, the interference fringes are regular. If there are defects on the wafer surface, the interference fringes will be deformed accordingly. The interference fringes are observed by the second camera 52, and the shape, spacing, and curvature of the interference fringes are analyzed to obtain detection information such as the flatness and microscopic morphology of the wafer surface, and obtain wafer surface defect information. For example, the curvature of the interference fringes can reflect the height change of the wafer surface.

[0030] Among them, the second camera 52 can realize the movement in the direction perpendicular to the wafer surface through the electric slide rail, and change the distance between the second camera 52 and the wafer surface. When the distance between the second camera 52 and the wafer surface is the first distance, the focal plane of the second camera 52 imaging is located on the wafer surface, and the imaging is clear; when the distance between the second camera 52 and the wafer surface is the second distance, the focal plane of the second camera 52 imaging is located above the wafer surface, and at this time, particles and other contaminant type defects above the wafer surface can be captured; when the distance between the second camera 52 and the wafer surface is the third distance, the focal plane of the second camera 52 imaging is located below the wafer surface, and at this time, depressions and scratches type defects below the wafer surface can be captured; wherein the second distance is greater than the first distance, and the third distance is less than the first distance. Through the detection of the amplified detection module 5, not only can the plane type defects be identified, but also the three-dimensional type defects on the wafer surface can be more clearly identified, so that the surface defects of the wafer can be detected more accurately to a certain extent, and the product quality of the wafer can be improved.

[0031] In order to further improve the detection efficiency, based on the above technical solutions, Figure 4As shown, the adsorption movement unit 21 includes a first adsorption arm 211 and a second adsorption arm 212, and the first adsorption arm 211 and the second adsorption arm 212 are arranged in the up and down directions. The position detection unit 22 includes a first subunit 221 and a second subunit 222, and the first subunit 221 and the second subunit 222 are respectively arranged opposite to the first adsorption arm 211 and the second adsorption arm 212.

[0032] like Figure 4 As shown, specifically, the adsorption moving unit 21 also includes a height adjustment platform 213 and a movable arm, the movable arm includes a first movable arm 214 and a second movable arm 215, the first movable arm 214 and the second movable arm 215 are both movably connected to the top of the height adjustment platform 213, the first adsorption arm 211 and the first subunit 221 are both connected to the first movable arm 214, the second adsorption arm 212 and the second subunit 222 are both connected to the second movable arm 215, wherein the setting of the first movable arm 214 and the second movable arm 215 can make the working positions of the first adsorption arm 211 and the second adsorption arm 212 and the first subunit 221 and the second subunit 222 more flexible, and can perform more accurate adsorption and detection according to the initial position of the wafer and the position to be moved. The first subunit 221 and the second subunit 222 can be infrared sensors or laser sensors.

[0033] The first movable arm 214 includes a first section, a second section and a third section. One end of the first section is rotatably connected to the height adjustment platform 213, one end of the second section is rotatably connected to the other end of the first section, one end of the third section is rotatably connected to the other end of the second section, and the other end of the third section is connected to the first adsorption arm 211 and the first subunit 221. The second movable arm 215 is similar to the first movable arm 214 and will not be described in detail. The heights of the first section, the second section and the third section are successively increased. One end of the second section is arranged above the other end of the first section, and the other end of the second section is arranged below the third section. The three-section arrangement of the first movable arm 214 and the second movable arm 215 can expand the working range of the first adsorption arm 211 and the second clamping adsorption 212 as well as the first subunit 221 and the second subunit 222, increase the working flexibility, and the three-section movable arm is staggered and can be retracted together when it is not necessary to stretch it out to work. There is no interference between each section, which improves the space utilization rate.

[0034] The height of the third section of the first movable arm 214 is higher than that of the third section of the second movable arm 215 , so that the first adsorption arm 211 and the second adsorption arm 212 are arranged in the up and down direction, which can avoid the mutual influence between the operations of the first adsorption arm 211 and the second adsorption arm 212 .

[0035] Furthermore, combined with Figure 5 As shown, the wafer moving module 2 also includes a base 23 and a base moving slide rail 24 , the adsorption moving unit 21 is arranged on the base 23 , the base 23 is arranged on the base moving slide rail 24 , and the base moving slide rail 24 extends in a direction close to the edge finding module 3 .

[0036] The base 23 and the base moving slide rail 24 are arranged so that the base moving slide rail 24 drives the base 23, and the base 23 drives the adsorption moving unit 21 to adsorb the wafer and move it to the edge-finding module 3. Specifically, the base moving slide rail 24 includes a sliding rail and a driving chain. The sliding rail extends in a direction close to the edge-finding module 3. The base 23 is provided with a sliding part, and the sliding part cooperates with the sliding rail so that the base 23 can slide relative to the base moving slide rail 24 in a direction close to or away from the edge-finding module 3. One end of the driving chain is connected to one side of the base 23, and the other end extends along the extension direction of the sliding rail.

[0037] Furthermore, if Figure 6 As shown, the film box module 1 includes a film box 11, a fixed plate 12 and a limit block 13. The film box 11 and the limit block 13 are arranged on the fixed plate 12. The film box 11 is provided with a limit part, and the limit block 13 is provided with a plurality of limit matching parts. The limit parts match with the limit matching parts, and the size of the wafer loaded in the film box 11 is determined according to the position of the limit matching parts matching with the limit parts.

[0038] Specifically, the multiple limiting fitting parts of the limiting block 13 are connected in a step shape, the number of the limiting blocks 13 is two, the two limiting blocks 13 are arranged opposite to each other, the number of the limiting parts is also two, the two limiting blocks 13 are respectively arranged corresponding to the two limiting parts, the models of the wafer boxes 11 for loading wafers of different sizes are different, the distances between the two limiting parts of the wafer boxes 11 of different models are different, the corresponding limiting fitting parts are different, and different limiting fitting parts represent different wafer sizes.

[0039] Based on the above technical solution, Figure 7 As shown, the edge-finding module 3 includes an edge-finding sensor 31 , a camera 32 and a rotating stage 33 . The wafer is placed on the rotating stage 33 , and the edge-finding sensor 31 and the camera 32 are arranged above the edge of the wafer.

[0040] Preferably, combined Figure 1 and Figure 8As shown, the wafer defect detection device also includes a shell 6, which includes a preparation chamber 61 and a detection chamber 62. The film box module 1, the wafer moving module 2 and the edge-finding module 3 are arranged in the preparation chamber 61, the standard detection module 4 and the amplification detection module 5 are arranged in the detection chamber 62, and two feed ports 63 are arranged between the preparation chamber 61 and the detection chamber 62. The two feed ports 63 are respectively arranged opposite to the standard detection module 4 and the amplification detection module 5.

[0041] Furthermore, the wafer defect detection device also includes a ventilation module, which includes a first ventilation module 71 and a second ventilation module 72, wherein the first ventilation module 71 is arranged at the top of the preparation chamber 61, and the second ventilation module 72 is arranged at the top of the detection chamber 62, and ventilation holes 73 are provided at the bottom of the preparation chamber 61 and the detection chamber 62.

[0042] Specifically, the first ventilation module 71 and the second ventilation module 72 are ventilation fans, which cooperate with the ventilation holes 73 to achieve air circulation in the preparation chamber 61 and the detection chamber 62 to ensure the cleanliness of the chambers.

[0043] On the basis of the above technical solution, the wafer defect detection device further includes a display module 8 and a control module, wherein the display module 8 is movably connected to the housing 6, and the control module is connected to the film box module 1, the wafer moving module 2, the edge finding module 3 and the defect detection module. The display module 8 is used to display the operation interface during the detection process, so that the operator can adjust the operation in time according to the needs and the actual situation during the detection process. The control module is used to control the cooperation between the film box module 1, the wafer moving module 2, the edge finding module 3 and the defect detection module to realize the automatic detection of wafer surface defects.

[0044] Combination Fig. 9 As shown, an embodiment of the present disclosure provides a wafer defect detection method, which is applied to a wafer defect detection device as described in any one of the above embodiments, comprising the following steps: S1, controlling the position detection unit to scan the cassette module to obtain the position of the wafer to be detected in the cassette module; S2, controlling the adsorption moving unit to adsorb the wafer and move it to the edge finding module to position and correct the eccentricity of the wafer; S3, controlling the adsorption moving unit to adsorb the wafer and move it to the standard inspection module, performing preliminary defect inspection on the wafer, and obtaining defect information of the defect area of ​​the wafer, wherein the defect information includes defect location, defect type and defect quantity; S4, determining whether a high magnification detection is required for the defective area of ​​the wafer, and if the high magnification detection is not required, controlling the adsorption moving unit to adsorb the wafer and move it back to the preset position of the cassette module; S5, when high magnification detection is required, determining the defect position to be magnified in the defect area of ​​the wafer that needs to be detected with high magnification according to the defect information obtained in step S3, controlling the adsorption moving unit to adsorb the wafer and move it to the magnification detection module, and performing high magnification detection on the defect position to be magnified; S6, after the inspection is completed, the adsorption moving unit is used to adsorb the wafer and move it back to the preset position in the cassette module.

[0045] By adopting the wafer defect detection method provided in the embodiment of the present disclosure, the wafer position in the cassette module can be automatically detected by the position detection unit, and then the wafer adsorption and movement can be automatically completed by the adsorption and movement unit, thereby avoiding errors caused by staff intervention, realizing the automation of wafer defect detection, and improving the efficiency of wafer defect detection. Wafer defects are detected by the standard detection module and the amplification detection module, and a specific defect area to be amplified can be selected by the standard detection module for high magnification detection. In this way, during the detection process of the standard detection module, it is not necessary to maintain a high magnification state for continuous detection, and only the selected defect area to be amplified needs to be detected at a high magnification. Moreover, the user can choose whether to use the amplification detection module for detection according to the detection requirements. If amplification detection is not required, the speed of defect detection can be accelerated. In this way, the accuracy of defect detection can be improved while improving the efficiency of defect detection.

[0046] In step S2, when the adsorption moving unit 21 places the wafer on the edge-finding module 3, the edge-finding module 3 can position the wafer and perform eccentricity detection on the wafer, so that the position of the wafer can be determined and the accuracy of subsequent detection can be ensured. When the wafer is eccentric, the adsorption moving unit 21 can move the wafer according to the eccentricity until the center of the wafer is aligned with the center of the edge-finding module 3, thereby improving the accuracy of the standard detection module 4 during operation. Before the wafer moves between the standard detection module 4 and the amplification detection module 5, the edge-finding module 3 can also perform wafer positioning and eccentricity detection again to further improve the detection accuracy.

[0047] Specifically, step S5 includes the following steps: S5.1, when high-magnification detection is required, according to the defect information obtained in step S3, the defect position to be magnified that needs to be detected with high magnification in the defect area of ​​the wafer is determined, and the adsorption moving unit is controlled to adsorb the wafer and move it to the magnification detection module; S5.2, the standard detection surface, the first detection surface and the second detection surface of the wafer are detected by the magnification detection module, wherein the first detection surface is higher than the standard detection surface and the second detection surface is lower than the standard detection surface; S5.3, the defect detection result information of the standard detection surface, the first detection surface and the second detection surface of the wafer is analyzed to obtain the defect information of the defect position to be magnified.

[0048] During the high magnification detection process, the standard detection surface, the first detection surface, and the second detection surface of the wafer are all detected and imaged for the defect position to be magnified. By comprehensively analyzing the imaging results of the three surfaces, the defect information of the defect position to be magnified is obtained. Through such detection, not only the planar type defects can be identified, but also the three-dimensional type defects on the wafer surface can be more clearly identified. In this way, the surface defects of the wafer can be detected more accurately to a certain extent, and the product quality of the wafer can be improved. Among them, the height of the standard detection surface, the first detection surface, and the second detection surface from the wafer surface is determined according to the defect information of the detection standard.

[0049] Furthermore, during high magnification inspection, the wafer surface is partitioned to obtain N two-dimensional areas to ensure that all of the two-dimensional areas are clearly imaged at the same magnification, where N is a positive integer. After the inspection is completed, each two-dimensional area is labeled and the inspection result information is recorded; the wafer is positioned through the edge-finding module, and a coordinate system is established to uniquely determine the position of the two-dimensional area.

[0050] One of the two-dimensional region partitioning methods is Fig.10 As shown, starting from the center of the wafer, M concentric circles are divided, where M is a positive integer. The non-minimum concentric circle is further divided into fan rings, and the areas of all fan rings are the same. In this way, there is no need to re-enlarge and focus during high-magnification re-inspection, which simplifies the inspection process.

[0051] Another implementation example is Fig.11 As shown, starting from the center of the wafer, P concentric circles are divided, where P is a positive integer, and the non-minimum concentric circles are further divided into fan rings, and one of the straight sides of the inner and outer adjacent fan rings is in the same radial direction.

[0052] In other embodiments, the detection area can be divided into other shapes according to detection requirements, such as further dividing the minimum concentric circle into sectors or dividing the wafer into other shapes such as rectangles and triangles based on the angle positioning initial point.

[0053] Combination Fig.12 As shown, an embodiment of the present disclosure provides a wafer defect detection device, including a processor and a memory storing program instructions. Optionally, the device may also include a communication interface and a bus. The processor, the communication interface, and the memory may communicate with each other through the bus. The communication interface may be used for information transmission. The processor is configured to execute a wafer defect detection method as described in any one of the above embodiments when running the program instructions.

[0054] In addition, the logic instructions in the above-mentioned memory can be implemented in the form of software functional units and can be stored in a computer-readable storage medium when sold or used as an independent product.

[0055] The memory, as a computer-readable storage medium, can be used to store software programs and computer executable programs, such as program instructions / modules corresponding to the method in the embodiments of the present disclosure. The processor executes the function application and data processing by running the program instructions / modules stored in the memory, that is, realizing the wafer defect detection method described in the above embodiments.

[0056] The memory may include a program storage area and a data storage area, wherein the program storage area may store an operating system and an application required for at least one function; the data storage area may store data created according to the use of the terminal device, etc. In addition, the memory may include a high-speed random access memory and may also include a non-volatile memory.

[0057] An embodiment of the present disclosure provides a computer-readable storage medium storing program instructions, which, when executed, are used to enable a computer to execute a wafer defect detection method as described in any one of the above embodiments.

[0058] The technical solution of the embodiment of the present disclosure can be embodied in the form of a software product, which is stored in a storage medium and includes one or more instructions for enabling a computer device (which may be a personal computer, a server, or a network device, etc.) to execute all or part of the steps of the method described in the embodiment of the present disclosure. The aforementioned storage medium may be a non-transient storage medium, such as: a USB flash drive, a mobile hard disk, a read-only memory (ROM), a random access memory (RAM), a disk or an optical disk, and other media that can store program codes.

[0059] The above description and the accompanying drawings fully illustrate the embodiments of the present disclosure so that those skilled in the art can practice them. Other embodiments may include structural, logical, electrical, process and other changes. The embodiments represent only possible changes. Unless explicitly required, separate components and functions are optional, and the order of operations may vary. Parts and features of some embodiments may be included in or replace parts and features of other embodiments. Moreover, the words used in this application are only used to describe the embodiments and are not used to limit the claims. As used in the description of the embodiments and the claims, unless the context clearly indicates, the singular forms of "a", "an" and "the" are intended to include plural forms as well. Similarly, the term "and / or" as used in this application refers to any and all possible combinations of one or more associated listings. In addition, when used in this application, the term "comprise" and its variants "comprises" and / or comprising refer to the presence of stated features, wholes, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, wholes, steps, operations, elements, components and / or groups thereof. In the absence of further restrictions, the elements defined by the sentence "including one..." do not exclude the presence of other identical elements in the process, method or device including the elements. In this article, each embodiment may focus on the differences from other embodiments, and the same and similar parts between the embodiments may refer to each other. For the methods, products, etc. disclosed in the embodiments, if they correspond to the method part disclosed in the embodiments, then the relevant parts can refer to the description of the method part.

[0060] Those skilled in the art will appreciate that the units and algorithm steps of each example described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are performed in hardware or software may depend on the specific application and design constraints of the technical solution. The technicians may use different methods for each specific application to implement the described functions, but such implementations should not be considered to exceed the scope of the embodiments of the present disclosure. The technicians may clearly understand that, for the convenience and simplicity of description, the specific working processes of the systems, devices and units described above may refer to the corresponding processes in the aforementioned method embodiments, and will not be repeated here.

[0061] In the embodiments disclosed herein, the disclosed methods and products (including but not limited to devices, equipment, etc.) can be implemented in other ways. For example, the device embodiments described above are only schematic. For example, the division of the units can be only a logical function division. There may be other division methods in actual implementation, such as multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. In addition, the coupling or direct coupling or communication connection between each other shown or discussed can be through some interfaces, indirect coupling or communication connection of devices or units, which can be electrical, mechanical or other forms. The units described as separate components may or may not be physically separated, and the components displayed as units may or may not be physical units, that is, they may be located in one place, or they may be distributed on multiple network units. Some or all of the units may be selected according to actual needs to implement this embodiment. In addition, each functional unit in the embodiment of the present disclosure may be integrated in a processing unit, or each unit may exist physically alone, or two or more units may be integrated in one unit.

[0062] The flowchart and block diagram in the accompanying drawings show the possible architecture, function and operation of the system, method and computer program product according to the embodiment of the present disclosure. In this regard, each box in the flowchart or block diagram can represent a module, a program segment or a part of the code, and the module, the program segment or a part of the code contains one or more executable instructions for realizing the specified logical function. In some alternative implementations, the functions marked in the box can also occur in a different order from the order marked in the accompanying drawings. For example, two consecutive boxes can actually be executed substantially in parallel, and they can sometimes be executed in the opposite order, which can depend on the functions involved. In the description corresponding to the flowchart and the block diagram in the accompanying drawings, the operations or steps corresponding to different boxes can also occur in a different order from the order disclosed in the description, and sometimes there is no specific order between different operations or steps. For example, two consecutive operations or steps can actually be executed substantially in parallel, and they can sometimes be executed in the opposite order, which can depend on the functions involved. Each block in the block diagrams and / or flowcharts, and combinations of blocks in the block diagrams and / or flowcharts, may be implemented by a dedicated hardware-based system that performs the specified functions or actions, or may be implemented by a combination of dedicated hardware and computer instructions.

[0063] The present invention is described above by way of examples, but the present invention is not limited to the above specific embodiments, and any changes or modifications made based on the present invention belong to the scope of protection claimed by the present invention.

Claims

1. A wafer defect detection device, characterized in that: It includes a film box module, a wafer moving module, an edge-finding module and a defect detection module. The wafer moving module includes an adsorption moving unit and a position detection unit. The position detection unit is used to detect the wafer placement position in the film box module. The adsorption moving unit is used to adsorb the wafer in the film box module and move it to the edge-finding module and move it from the edge-finding module to the defect detection module. The defect detection module includes a standard detection module and an amplification detection module. The standard detection module is used to detect defects on the wafer surface and determine the defect area to be amplified. The amplification detection module is used for defect detection in the defect area to be amplified.

2. The wafer defect detection device according to claim 1, characterized in that: The standard detection module includes a first light source, a first camera, a first lens and a first wafer loading table, wherein the first camera, the first lens and the first wafer loading table are arranged in sequence, the first light source is arranged between the first camera and the first lens, the first camera can move in a direction approaching or away from the first lens, the first camera includes a first lens and a second lens, the magnification of the second lens is greater than the magnification of the first lens, the side of the first lens close to the first camera is a plane, and the side of the first lens close to the first wafer loading table is a convex surface.

3. The wafer defect detection device according to claim 2, characterized in that: The amplification detection module includes a second light source, a beam splitter, a second camera, a second lens, a third lens and a second wafer loading table. The second camera, the beam splitter, the second lens, the third lens and the second wafer loading table are arranged in sequence. The second light source is arranged between the second camera and the second lens. The second camera can move in a direction close to or away from the second lens. The side of the second lens close to the second camera is a plane, the side of the second lens close to the third lens is a convex surface, and the third lens is a plane flat crystal.

4. The wafer defect detection device according to claim 3, characterized in that: The adsorption movement unit includes a first adsorption arm and a second adsorption arm, which are arranged in the up and down directions. The position detection unit includes a first subunit and a second subunit, which are arranged opposite to the first adsorption arm and the second adsorption arm respectively.

5. The wafer defect detection device according to claim 1, characterized in that: The wafer moving module also includes a base and a base moving slide rail, the adsorption moving unit is arranged on the base, the base is arranged on the base moving slide rail, and the base moving slide rail extends in a direction close to the edge finding module.

6. A wafer defect detection method, applied to a wafer defect detection device as claimed in any one of claims 1 to 5, characterized in that: The following steps are involved: S1, controlling the position detection unit to scan the cassette module to obtain the position of the wafer to be detected in the cassette module; S2, controlling the adsorption moving unit to adsorb the wafer and move it to the edge finding module to position and correct the eccentricity of the wafer; S3, controlling the adsorption moving unit to adsorb the wafer and move it to the standard inspection module, performing preliminary defect inspection on the wafer, and obtaining defect information of the defect area of ​​the wafer, wherein the defect information includes defect location, defect type and defect quantity; S4, determining whether a high magnification detection is required for the defective area of ​​the wafer, and if the high magnification detection is not required, controlling the adsorption moving unit to adsorb the wafer and move it back to the preset position of the cassette module; S5, when high magnification detection is required, determining the defect position to be magnified in the defect area of ​​the wafer that needs to be detected with high magnification according to the defect information obtained in step S3, controlling the adsorption moving unit to adsorb the wafer and move it to the magnification detection module, and performing high magnification detection on the defect position to be magnified; S6, after the inspection is completed, the adsorption moving unit is used to adsorb the wafer and move it back to the preset position in the cassette module.

7. The wafer defect detection method according to claim 6, characterized in that: Step S5 includes the following steps: S5.1, when high magnification detection is required, determine the defect position to be magnified in the wafer defect area that needs high magnification detection according to the defect information obtained in step S3, and control the adsorption moving unit to adsorb the wafer and move it to the magnification detection module; S5.2, using an amplified detection module to detect a standard detection surface, a first detection surface, and a second detection surface of the wafer, wherein the first detection surface is higher than the standard detection surface, and the second detection surface is lower than the standard detection surface; S5.3, analyzing the defect detection result information of the standard detection surface, the first detection surface, and the second detection surface of the wafer to obtain defect information of the defect position to be amplified.

8. The wafer defect detection method according to claim 6, characterized in that: During high magnification inspection, the wafer surface is partitioned to obtain N two-dimensional areas, ensuring that all the two-dimensional areas are clearly imaged at the same magnification, where N is a positive integer, and each two-dimensional area is labeled and recorded with inspection result information after the inspection is completed; The wafer is positioned by an edge-finding module, and a coordinate system is established to uniquely determine the position of the two-dimensional area.

9. The wafer defect detection method according to claim 8, characterized in that: The two-dimensional area is divided as follows: starting from the center of the wafer, M concentric circles are divided, where M is a positive integer, and non-minimum concentric circles are further divided into fan rings, and all the divided fan rings have equal areas, wherein the two-dimensional area includes the minimum concentric circle and the fan ring.

10. A wafer defect detection device, comprising a processor and a memory storing program instructions, characterized in that: The processor is configured to execute the wafer defect detection method according to any one of claims 6 to 9 when running the program instructions.

11. A computer-readable storage medium storing program instructions, characterized in that: When the program instructions are executed, the computer is used to execute the wafer defect detection method according to any one of claims 6 to 9.

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