Semiconductor wet cleaning apparatus and self-cleaning method thereof

Abstract

The application discloses a semiconductor wet cleaning equipment and a self-cleaning method thereof, and relates to the semiconductor field. The semiconductor wet cleaning equipment comprises a cavity, a bearing device, a protective cover and a self-cleaning device. The bearing device and the protective cover are arranged in the cavity, the protective cover is arranged outside the bearing device, the protective cover comprises a plurality of recovery cavities arranged along the axial direction of the cavity and used for recovering process liquid, and gaps are arranged between adjacent two recovery cavities. The self-cleaning device comprises a liquid inlet assembly and a spraying assembly. The spraying assembly is arranged in the gap, and the liquid inlet assembly is connected with the spraying assembly and used for conveying cleaning medium to the spraying assembly and spraying the cleaning medium to the gap through the spraying assembly. The application can at least solve the problem that the process is affected by the accumulation of liquid in the gap between the recovery layers, and the wafer is damaged.

Description

TECHNICAL FIELD

[0001] The present application belongs to the field of semiconductor, and particularly relates to a semiconductor wet cleaning device and a self-cleaning method thereof. BACKGROUND

[0002] In the integrated circuit manufacturing process, wet cleaning as a very important surface treatment method accounts for about 30% of the process. With the progress of semiconductor chip manufacturing process, the mainstream cleaning equipment is a single chip cleaning device. Compared with the tank type, the process chamber of the single chip is smaller and the internal structure is more complex. With the promotion of single chip cleaning machine in the whole process, it will contact different types, different effects and different temperature chemicals. Under this background, the market has more and more requirements for the internal chamber of single chip cleaning machine.

[0003] For the chemicals which are easy to evaporate, have high process temperature and are easy to splash, a protective cover can be arranged in the process chamber for collecting the chemicals. However, during the process, the chemicals are easy to accumulate in the protective cover, affecting the normal process and causing damage to the wafer. SUMMARY

[0004] The purpose of the embodiments of the present application is to provide a semiconductor wet cleaning device and a self-cleaning method thereof, which can at least solve the problems of chemical accumulation in the protective cover affecting the process and causing damage to the wafer.

[0005] In order to solve the above technical problems, the present application is implemented as follows:

[0006] The embodiments of the present application provide a semiconductor wet cleaning device, which comprises a cavity, a bearing device, a protective cover and a self-cleaning device.

[0007] The bearing device and the protective cover are arranged in the cavity, the protective cover is arranged outside the bearing device, the protective cover comprises a plurality of recovery cavities arranged along the axial direction of the cavity and used for recovering process liquid, and a gap is arranged between adjacent two recovery cavities.

[0008] The self-cleaning device comprises a liquid inlet assembly and a spraying assembly, the spraying assembly is arranged in the gap, the liquid inlet assembly is connected with the spraying assembly, is used for conveying cleaning medium to the spraying assembly, and sprays the cleaning medium to the gap through the spraying assembly.

[0009] The embodiments of the present application further provide a self-cleaning method of a semiconductor wet cleaning device, which is applied to the above semiconductor wet cleaning device, and comprises the following steps.

[0010] The spraying assembly arranged in the gap sprays cleaning medium to the gap, so as to clean the pollutants accumulated in the gap by the cleaning medium.

[0011] In the embodiments of the present application, the cleaning medium is delivered to the spraying assembly by the liquid inlet assembly, and the cleaning medium is sprayed into the gap between the recovery cavity of the protective cover by the spraying assembly, so that the pollutants accumulated in the gap can be cleaned by the cleaning medium, thereby effectively alleviating the problem that the gap is blocked due to the accumulation of pollutants in the gap, reducing or even eliminating the influence of the gap blockage on the flow field of the wafer surface, alleviating the particle pollution problem, and also alleviating the problem that the structure hardware is corroded by pollutants. BRIEF DESCRIPTION OF DRAWINGS

[0012] Figure 1 FIG. 1 is a structural schematic diagram of a protective cover and a process chuck in the related art;

[0013] Figure 2 FIG. 1 is a structural schematic diagram of a protective cover and a process chuck in the related art;

[0014] Figure 3 FIG. 1 is a structural schematic diagram of a protective cover and a process chuck in the related art;

[0015] Figure 4 FIG. 1 is a structural schematic diagram of a protective cover and a process chuck in the related art;

[0016] Figure 5 FIG. 1 is a structural schematic diagram of a protective cover and a process chuck in the related art;

[0017] Figure 6 FIG. 1 is a structural schematic diagram of a protective cover and a process chuck in the related art;

[0018] Figure 7 FIG. 1 is a structural schematic diagram of a protective cover and a process chuck in the related art;

[0019] Figure 8 FIG. 1 is a structural schematic diagram of a protective cover and a process chuck in the related art;

[0020] Figure 9 FIG. 1 is a structural schematic diagram of a protective cover and a process chuck in the related art;

[0021] Figure 10 FIG. 1 is a structural schematic diagram of a protective cover and a process chuck in the related art;

[0022] BRIEF DESCRIPTION OF DRAWINGS

[0023] 01-process chuck; 02-process chuck protective cover; 021-chemical liquid recovery layer; 022-gap;

[0024] 100-self-cleaning device;

[0025] 110 - liquid inlet assembly; 111 - liquid inlet branch pipe; 112 - gas inlet branch pipe; 113 - liquid inlet main pipe; 114 - water mist generator; 115 - nozzle; 116 - first control valve; 117 - second control valve; 118 - first flow detection element; 119 - second flow detection element;

[0026] 120 - spraying assembly; 121 - spraying cavity; 1211 - inclined top wall; 1212 - inclined bottom wall; 1213 - inner ring wall; 1214 - outer ring wall; 122 - inlet; 123 - grid hole;

[0027] 130 - liquid outlet assembly; 131 - liquid outlet box; 132 - liquid outlet main pipe; 133 - gas-liquid separator; 134 - waste gas branch pipe; 135 - waste liquid branch pipe;

[0028] 200 - protective cover; 210 - recovery cavity; 220 - gap;

[0029] 300 - bearing device. DETAILED DESCRIPTION

[0030] The technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work fall within the scope of protection of the present application.

[0031] The terms "first", "second", and the like in the specification and claims of the present application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the data used in this way can be exchanged under appropriate circumstances, so that the embodiments of the present application can be implemented in an order other than those illustrated or described herein, and the objects distinguished by "first", "second", etc. are usually a category, and are not limited to the number of objects, for example, the first object can be one or more. In addition, "and / or" in the specification and claims indicates at least one of the connected objects, and the character " / ", generally indicates that the front and rear associated objects are in an "or" relationship.

[0032] The embodiments of the present application will be described in detail below with reference to the drawings and specific examples and their application scenarios.

[0033] For the liquid medicine which is easy to evaporate, has high process temperature and is easy to splash, it is necessary to clean the process chamber. Referring to Figure 1, process chuck 01, mechanical arm, spray head, process chuck protective cover 02, etc. In the current equipment, the liquid medicine vapor will gather and crystallize at the gap 022 between the liquid medicine recovery layer 021 during the process, such as BOE (HF, NH4F, H2O), ACT NE-111 (finished acid, AlIC Clean), NH4F, etc. These crystals may fall on the surface of the process chuck 01 with the action of the chamber, block the clamping needle opening, cause the process chuck 01 to open and close abnormally, and even cause wafer damage in severe cases. In addition, if the crystallization falls during the process, a large number of particles will be generated, causing serious process problems; the liquid medicine splashed and left in the gap 022, for example, TMAH (tetramethylammonium hydroxide, commonly used in chemical mechanical polishing), REZi-38 (finished acid, Al / CU stripping solution), SPM (H2SO4, H2O2, H2O mixture) etc. When this liquid medicine splashes into the gap 022, over time, it will corrode the hardware and reduce the service life of the hardware, and when it is blocked to a certain extent, it may affect the wafer surface flow field, causing micro-environment damage and particle contamination problems.

[0034] To solve the above problems, the embodiments of the present application disclose a semiconductor wet cleaning equipment, which is used for processing wafers. The semiconductor wet cleaning equipment can perform wet cleaning process on wafers, that is, wet etching process, etc.

[0035] Reference Figures 2 to 10 The disclosed semiconductor wet cleaning equipment includes a cavity, a bearing device 300, a protective cover 200 and a self-cleaning device 100.

[0036] The cavity is a basic component, which can provide a containing space for the bearing device 300, the protective cover 200, the self-cleaning device 100, etc., and also can provide a sealed environment for process treatment (such as wet cleaning process, etc.), the bearing device 300 is used for bearing wafers, and the protective cover 200 is used for protection.

[0037] In order to perform process treatment, the semiconductor wet cleaning equipment can further include a liquid medicine spraying device and an ultrapure water spraying device (not shown in the figure), so as to spray liquid medicine or ultrapure water to the bearing device 300 and the wafer respectively during the process, so as to meet the process requirements in the wet etching process.

[0038] In the actual process (such as wet cleaning or wet etching), the wafer is placed on the bearing device 300 and carried by the bearing device 300 to rotate, the process liquid is sprayed to the wafer surface by the liquid spraying device, and the ultrapure water is sprayed to the wafer surface by the ultrapure water spraying device, so that the impurities on the wafer surface can be removed or the thin film layer (such as a silicon nitride layer) on the wafer surface can be etched, thereby improving the quality of the product. In addition, the process liquid and ultrapure water can be more uniformly sprayed to the wafer surface by carrying the wafer to rotate by the bearing device 300, thereby further improving the uniformity of the process and improving the product yield. In addition, the process liquid can be collected by the protective cover 200 during the process to prevent the process liquid from splashing randomly.

[0039] In some embodiments, the bearing device 300 and the protective cover 200 are arranged in the cavity, and the protective cover 200 is arranged outside the bearing device 300. In this way, the process liquid can be collected around the bearing device 300 by the protective cover 200. The protective cover 200 can include a plurality of recovery cavities 210 arranged along the axial direction of the cavity, and the plurality of recovery cavities 210 are used to recover the process liquid, and the adjacent two recovery cavities 210 have a gap 220 therebetween.

[0040] Based on the above arrangement, a plurality of recovery cavities 210 can be formed in the cavity to surround the bearing device 300 outside, so that the process liquid splashed during the rotation of the bearing device 300 can be recovered to prevent the process liquid from splashing randomly and causing pollution or damaging the cavity. Considering that the protective cover 200 includes a plurality of recovery cavities 210 arranged in a stacked manner, a gap 220 is formed between the adjacent two recovery cavities 210. Due to the existence of the gap 220, the gas generated by the evaporation of the process liquid during the process can enter the gap 220 and deposit. If the cleaning is not timely or not in place, the process liquid may crystallize at the gap 220, especially at the edge of the gap 220. Over time, this may affect the normal use of the cavity or corrode the hardware. In addition, the crystallization may also cause the cavity to be contaminated and affect the product yield if it accidentally falls.

[0041] Based on the above situation, the semiconductor wet cleaning equipment in the embodiments of the present application includes a self-cleaning device 100, which includes a liquid inlet assembly 110 and a spraying assembly 120. The spraying assembly 120 is arranged in the gap 220, and the liquid inlet assembly 110 is connected with the spraying assembly 120 and used to deliver a cleaning medium to the spraying assembly 120, and the spraying assembly 120 sprays the cleaning medium to the gap 220 to clean the pollutants in the gap 220 by the cleaning medium.

[0042] Based on the above setting, in the embodiment of the present application, the liquid inlet assembly 110 delivers the cleaning medium to the spraying assembly 120, and the spraying assembly 120 sprays the cleaning medium into the gap 220 between the recovery cavities 210 of the protective cover 200, so as to clean the pollutants accumulated in the gap 220 by the cleaning medium, thereby effectively alleviating the problem that the pollutants accumulated in the gap 220 cause the gap 220 to be blocked, reducing or even eliminating the influence of the blockage of the gap 220 on the flow field on the wafer surface, alleviating the particle pollution problem, and also alleviating the problem that the structure hardware is corroded by the pollutants.

[0043] In some embodiments, the spraying assembly 120 can include a spraying cavity 121 provided with an inlet 122, and the liquid inlet assembly 110 communicates with the inlet 122. In addition, the spraying cavity 121 can be provided with a grid hole 123, and the inner cavity of the spraying cavity 121 communicates with the gap 220 through the grid hole 123. Through the setting of the grid hole 123, the cleaning medium in the spraying cavity 121 can be blocked to some extent, so as to prevent the cleaning medium from directly diffusing downward after entering the inlet 122, thereby effectively alleviating the problem that the cleaning medium directly diffuses downward and causes uneven cleaning effect. In addition, the grid hole 123 can also uniformly diffuse the cleaning medium, so as to improve the uniformity of the spraying of the cleaning medium.

[0044] Based on the above setting, the liquid inlet assembly 110 can deliver the cleaning medium into the spraying cavity 121 through the inlet 122, and the cleaning medium in the spraying cavity 121 can be sprayed into the gap 220 through the grid hole 123. Through the setting of the grid hole 123, the spraying area of the cleaning medium can be increased, and the cleaning medium can be diffused, so as to clean the gap 220 in all directions, improve the uniformity of the cleaning effect, and thus improve the cleaning effect of the gap 220, effectively preventing the process liquid from being accumulated and crystallized in the gap 220.

[0045] It should be noted here that the grid density of the grid hole 123 should not be too low, because too low grid density will cause the spraying cavity 121 to not have the storage effect on the cleaning medium. Of course, the grid density should not be too high, because too high grid density will cause the pressure in the spraying cavity 121 to be too high. Therefore, when designing the grid density, the delivery pressure and the spraying pressure of the cleaning medium should be considered.

[0046] Considering that the protective cover 200 is arranged outside the bearing device 300, the plurality of recovery cavities 210 are annular cavities, and an annular gap is formed between the adjacent two recovery cavities 210, and the annular gap gradually extends downward from the center line of the protective cover 200 to the edge direction.

[0047] In order to adapt to the gap 220, the spray cavity 121 can be an annular cavity, and the cross-sectional area of the first end opening of the spray cavity 121 is smaller than that of the second end opening in the axial direction of the cavity. Based on this arrangement, the spray cavity 121 of this shape can adapt to the shape of the gap 220 to facilitate omnidirectional spray cleaning of the gap 220 and ensure the uniformity of the cleaning effect of the gap 220.

[0048] In some embodiments, the spray cavity 121 can include a tilted top wall 1211, an inner ring wall 1213, a tilted bottom wall 1212 and an outer ring wall 1214 connected in sequence, wherein the tilted top wall 1211 is connected to the top of the gap 220, the tilted bottom wall 1212 is spaced apart from the bottom of the gap 220, and the grid holes 123 are distributed on the tilted bottom wall 1212, and the inlet 122 is provided on the tilted top wall 1211. Based on this arrangement, the cleaning medium can enter through the top of the spray cavity 121 and be sprayed to the bottom of the gap 220 through the grid holes 123 on the tilted bottom wall 1212 under the action of gravity, and finally flow out of the gap 220 along the gap 220, and the contaminants are carried out of the gap 220, to achieve cleaning of the gap 220 and ensure the cleanliness of the gap 220.

[0049] In addition, by spraying the cleaning medium into the gap 220 from top to bottom through the spray cavity 121, the structure is relatively simple, the stability is strong, and the flow and angle of the cleaning medium are less demanding.

[0050] Exemplarily, the spray cavity 121 is in the shape of a trapezoidal ring as a whole, and the cross section can be in the shape of a parallelogram. The spray cavity 121 of this shape can adapt to the shape of the gap 220, facilitate fitting to the top surface of the gap 220, and the inclination angle is consistent with the top surface.

[0051] Further, the inlet 122 can be located in the region of the tilted top wall 1211 close to the inner ring wall 1213, and the inlet 122 is arranged opposite to the inner ring wall 1213. Based on this design, the cleaning medium entering the spray cavity 121 through the inlet 122 first collides with the inner ring wall 1213, and then flows downward along the spray cavity 121, so that the cleaning medium can flow obliquely from top to bottom through the tilted bottom wall 1212, and can be sprayed more uniformly from the grid holes 123 to the gap 220, to a certain extent, the spraying uniformity of the cleaning medium can be improved, and the uniformity of the cleaning effect of the gap 220 can be improved.

[0052] Exemplarily, the axis of the inlet 122 extends in a horizontal direction, which can make the cleaning medium enter the spraying cavity 121 in a horizontal direction and be blocked by the inner ring wall 1213 to diffuse in the spraying cavity 121, thereby improving the diffusion effect of the cleaning medium in the spraying cavity 121.

[0053] In some embodiments, the liquid inlet assembly 110 can include a liquid inlet branch pipe 111, an air inlet branch pipe 112, a liquid inlet main pipe 113, a water mist generator 114, and a nozzle 115, wherein the liquid inlet branch pipe 111 and the air inlet branch pipe 112 are respectively connected to the input end of the water mist generator 114, the liquid inlet main pipe 113 is connected to the output end of the water mist generator 114, the nozzle 115 is connected to the end of the liquid inlet main pipe 113 away from the water mist generator 114, and is connected to the spraying assembly 120. Based on this arrangement, the liquid inlet branch pipe 111 and the air inlet branch pipe 112 can respectively deliver the liquid cleaning medium and the gas to the water mist generator 114, the water mist generator 114 can generate water mist cleaning medium after processing, the water mist cleaning medium can be delivered to the nozzle 115 through the liquid inlet main pipe 113, and can be sprayed by the nozzle 115 to the spraying assembly 120, and finally to the gap 220, so as to clean the gap 220 by the water mist cleaning medium.

[0054] Specifically, the nozzle 115 can be connected to the inlet 122 of the spraying cavity 121, so that the water mist cleaning medium enters the spraying cavity 121 through the inlet 122, fills the spraying cavity 121, and is finally sprayed to the gap 220 through the grid holes 123, so as to achieve the cleaning effect on the gap 220.

[0055] Exemplarily, the nozzle 115 can be a water mist nozzle, the water mist sprayed by the water mist nozzle is closer to the gas, which facilitates the water mist cleaning medium to fill the entire spraying cavity 121; in addition, the gas introduced into the air inlet branch pipe 112 can be an inert gas, such as nitrogen.

[0056] Based on the above arrangement, the pollutants in the gap 220 can be cleaned by the water mist cleaning medium, which can improve the contact area between the cleaning medium and the gap 220, prolong the contact time between the cleaning medium and the pollutants, and to a certain extent, improve the cleaning efficiency and the cleaning effect; in addition, the uniformity of the distribution of the cleaning medium in the gap 220 can be improved, so that the cleaning medium fills the space in the entire gap 220, and to a certain extent, the uniformity of the cleaning effect can be improved.

[0057] In addition, the liquid inlet assembly 110 can further include a first control valve 116, a second control valve 117, a first flow detection element 118 and a second flow detection element 119, wherein the first control valve 116 and the first flow detection element 118 are arranged on the liquid inlet branch pipe 111, and the first control valve 116 is electrically connected with the first flow detection element 118; the second control valve 117 and the second flow detection element 119 are arranged on the gas inlet branch pipe 112, and the second control valve 117 is electrically connected with the second flow detection element 119. Based on the above arrangement, the flow of the liquid cleaning medium in the liquid inlet branch pipe 111 can be detected in real time by the first flow detection element 118, and the flow can be controlled in real time by the first control valve 116 according to actual needs; the flow of the gas in the gas inlet branch pipe 112 can be detected in real time by the second flow detection element 119, and the flow can be controlled by the second control valve 117 according to actual needs.

[0058] For example, in order to achieve the desired atomization effect, the flow of the liquid cleaning medium can be set to be not less than 200 ml / min, and the flow of the gas can be set to be not less than 60 L / min, of course, other ranges can also be used, which are not limited here.

[0059] It should be noted that in order to form the water mist cleaning medium, the flow of the liquid cleaning medium and the flow of the gas entering the water mist generator 114 need to be controlled. For example, the flow of the liquid cleaning medium is 200 ml / min to 300 ml / min, and the flow of the nitrogen gas is 60 L / min. Assuming that the flow of the nitrogen gas is constant, when the first flow detection element 118 detects that the flow of the liquid cleaning medium in the liquid inlet branch pipe 111 is less than 200 ml / min, the liquid content in the water mist cleaning medium is too low, which leads to incomplete cleaning within the preset time, and the cleaning time needs to be prolonged, which affects the cleaning process efficiency; when the first flow detection element 118 detects that the flow of the liquid cleaning medium in the liquid inlet branch pipe 111 is higher than 300 ml / min, the liquid content in the water mist cleaning medium is too high, which leads to that the cleaning medium can only clean part of the area, thereby leading to incomplete cleaning of the pollutants. Therefore, the first flow detection element 118 sends a signal to the first control valve 116, so as to increase or decrease the flow of the liquid cleaning medium in the liquid inlet branch pipe 111 by adjusting the first control valve 116, thereby ensuring that the flow of the liquid cleaning medium is appropriate.

[0060] Of course, when the flow of the liquid cleaning medium is constant, the second control valve 117 can also be controlled according to the flow of the gas in the gas inlet branch pipe 112 detected by the second flow detection element 119, so as to decrease or increase the flow of the gas in the gas inlet branch pipe 112 by adjusting the second control valve 117, thereby ensuring that the flow of the gas is appropriate.

[0061] Exemplarily, the first flow detection element 118 and the second flow detection element 119 can each be a flow meter, and can also be other components, which are not specifically limited here. In addition, the first control valve 116 and the second control valve 117 can each be a pneumatic valve, and can also be other types of valve bodies, which are not specifically limited here.

[0062] To further improve the uniformity of cleaning, the spraying assembly 120 can include an annular spraying cavity 121 (i.e., the annular cavity described above), which is provided with a plurality of inlets 122 uniformly arranged along the circumference of the spraying cavity 121. Correspondingly, the liquid inlet assembly 110 can include a plurality of nozzles 115 in one-to-one correspondence with the plurality of inlets 122. Based on this arrangement, the water mist cleaning medium can be sprayed into the plurality of inlets 122 through the plurality of nozzles 115, so as to improve the uniformity of diffusion of the water mist cleaning medium in the spraying cavity 121, and thus facilitate the spraying of the water mist cleaning medium into the gap 220 through the grid holes 123, and improve the cleaning effect.

[0063] Exemplarily, the liquid inlet assembly 110 can include three nozzles 115, and correspondingly, the spraying cavity 121 can be provided with three inlets 122, and the three nozzles 115 and the three inlets 122 are uniformly arranged respectively, so as to further improve the uniformity of diffusion of the water mist cleaning medium in the spraying cavity 121. Of course, there can also be other quantities, which are not specifically limited here.

[0064] To prevent the cleaning medium carrying pollutants from flowing into the cavity and causing pollution in the cavity, the self-cleaning device 100 can also include a liquid discharge assembly 130, which can collect the cleaning medium flowing out of the gap 220 and discharge it out of the cavity, so as to prevent the cleaning medium carrying pollutants from accumulating in the cavity and causing pollution.

[0065] The liquid drainage assembly 130 can include a liquid drainage box 131, a liquid drainage main pipe 132, a gas-liquid separator 133, a waste gas branch pipe 134, and a waste liquid branch pipe 135. The liquid drainage box 131 is located below the protective cover 200 and is used to receive the cleaning medium flowing out of the gap 220 via the gap 220. The liquid drainage main pipe 132 is connected between the liquid drainage box 131 and the input end of the gas-liquid separator 133. The waste gas branch pipe 134 and the waste liquid branch pipe 135 are respectively connected to the output end of the gas-liquid separator 133. Based on the above arrangement, after the cleaning medium cleans the gap 220, the cleaning medium carrying the pollutants flows out of the gap 220 and falls into the liquid drainage box 131. Then, the cleaning medium is transported to the gas-liquid separator 133 via the liquid drainage main pipe 132 for gas-liquid separation. After the gas-liquid separation, the waste gas formed can be transported to a designated location (for example, a waste gas treatment plant) via the waste gas branch pipe 134, and the waste liquid can be transported to another designated location (for example, a waste liquid treatment plant) via the waste liquid branch pipe 135. Therefore, the cleaning medium carrying the pollutants can be prevented from polluting the cavity, and the waste gas and the waste liquid can be prevented from polluting the external environment.

[0066] Based on the above arrangement, the application further discloses a self-cleaning method of a semiconductor wet cleaning device.

[0067] Reference Figures 2 to 10 The disclosed self-cleaning method includes the following steps.

[0068] 701. The spray assembly 120 arranged in the gap 220 is used to spray the cleaning medium to the gap 220, so that the pollutants accumulated in the gap 220 are cleaned by the cleaning medium.

[0069] Based on the above step, the gap 220 of the protective cover 200 can be cleaned by the cleaning medium, so that the pollutants in the gap 220 are cleaned and the cleanliness of the gap 220 is ensured.

[0070] Optionally, the liquid inlet assembly 110 can include a water mist generator 114.

[0071] The self-cleaning method includes the following steps.

[0072] 801. The water mist generator 114 is used to generate water mist cleaning medium, which is sprayed to the gap 220 via the spray assembly 120, so that the pollutants accumulated in the gap 220 are cleaned.

[0073] Compared with liquid cleaning, the water mist cleaning method adopted by the application can be beneficial to the diffusion of the cleaning medium and improve the uniformity of the cleaning medium sprayed into the gap 220, so that the cleaning effect uniformity can be improved.

[0074] Further, the water mist generator 114 generates the water mist cleaning medium by the following steps.

[0075] 8011、According to the preset flow ratio, the cleaning medium and the gas are respectively introduced into the water mist generator 114 to generate the water mist cleaning medium through the water mist generator 114.

[0076] Specifically, the flow rates of the cleaning medium and the gas are detected respectively;

[0077] The flow rate of at least one of the cleaning medium and the gas is adjusted, so that the cleaning medium and the gas are respectively delivered to the water mist generator 114 according to the preset flow ratio.

[0078] Reference Figure 10 The flow of the self-cleaning method in the embodiment of the application is as follows:

[0079] Step 1001, start;

[0080] Step 1002, detect whether there is a wafer in the cavity for processing, if yes, execute step 1003, if not, execute step 1004;

[0081] 1003, wait for the end of the process;

[0082] 1004, lower the carrying device 300 to a low position and rotate;

[0083] 1005, open the nitrogen gas protection on the front of the carrying device 300;

[0084] 1006, spray the water mist cleaning medium into the gap 220 to clean the gap 220;

[0085] 1007, close the first control valve 116 and the second control valve 117;

[0086] 1008, spray nitrogen gas to the surface of the carrying device 300, and the carrying device 300 returns to the original position;

[0087] 1009, end.

[0088] The specific process is that, before starting the self-cleaning process, first detect whether there is a wafer in the cavity for processing, if yes, wait for the completion of all wafer processes before starting the cleaning process, if not, prepare for starting the cleaning process;

[0089] Lower the carrying device 300 to a low position, so that the carrying device 300 is located within the range surrounded by the protective cover 200, and start the carrying device 300 to rotate, and then spray protective gas such as nitrogen gas to the surface of the carrying device 300, so as to prevent residual process liquid, ultrapure water, etc. from entering the carrying device 300 during the process;

[0090] After the above preparation work is completed, start the cleaning process, spray the water mist cleaning medium into the gap 220 through the spraying assembly 120, so as to clean the pollutants accumulated in the gap 220 through the water mist cleaning medium.

[0091] Specifically, the liquid cleaning medium and the gas enter the water mist generator 114 according to a preset flow ratio, the water mist cleaning medium is generated by the water mist generator 114, is sprayed into the spraying cavity 121 through the nozzle 115, and is diffused in the spraying cavity 121 by being blocked by the inner ring wall 1213 of the spraying cavity 121; after the water mist cleaning medium fills the spraying cavity 121, the water mist cleaning medium diffuses downward through the grid hole 123 to clean the gap 220, and at the same time of cleaning the gap 220, the water mist cleaning medium gathers downward along the wall surface of the gap 220, and finally all flows into the liquid discharge box 131 and passes through the gas-liquid separator 133, the generated waste gas enters the factory through the waste gas branch pipe 134, and the generated waste liquid enters the factory through the waste liquid branch pipe 135.

[0092] After the cleaning process lasts for a period of time (for example, 1 min, etc.), the first control valve 116 and the second control valve 117 are closed, the input of the liquid cleaning medium and the gas is stopped, and a period of time (for example, 1 min, etc.) is waited to ensure that all the water mist cleaning medium enters the liquid discharge box 131.

[0093] Nitrogen is sprayed to the surface of the bearing device 300 to dry the surface of the bearing device 300, and after the bearing device 300 is dried, the bearing device 300 is homed to facilitate preparation for the next process.

[0094] In summary, the spraying cavity 121 is designed for the gap 220 of the protective cover 200, and the grid hole 123 is designed, so that the spraying from top to bottom can be realized, the structure is more simple, the stability is relatively high, the flow of the cleaning medium and the spraying angle are relatively low, the water mist cleaning medium is used to clean the gap 220, and the cleaning effect uniformity can be improved to a certain extent.

[0095] Based on the above steps, by adjusting the flow ratio between the cleaning medium and the gas, the liquid content in the cleaning medium can not be too high or too low, the respective contents of the cleaning medium and the gas are appropriately ensured, and then the water mist cleaning medium with a better cleaning effect is generated, so that the cleaning effect is improved. Therefore, the problems of cleaning of pollutants in the gap 220, non-uniform spraying cleaning effect, and relatively poor stability can be alleviated.

[0096] The embodiments of the application are described above in combination with the drawings, but the application is not limited to the specific embodiments described above, the specific embodiments described above are only illustrative but not limiting, and those skilled in the art can make many forms under the inspiration of the application without departing from the purpose of the application and the scope protected by the claims.

Claims

1. A semiconductor wet cleaning apparatus, characterized in that, The utility model relates to a self-cleaning device for a cavity, a bearing device (300), a protective cover (200) and a self-cleaning device (100) are included. The bearing device (300) and the protective cover (200) are arranged in the cavity, the protective cover (200) is arranged on the outer side of the bearing device (300), the protective cover (200) includes a plurality of recovery cavities (210) arranged along the axial direction of the cavity and used for recovering process liquid, and a gap (220) is arranged between adjacent two recovery cavities (210). The self-cleaning device (100) includes a liquid inlet assembly (110) and a spraying assembly (120), the spraying assembly (120) is arranged in the gap (220), the liquid inlet assembly (110) is connected with the spraying assembly (120) and used for conveying cleaning medium to the spraying assembly (120) and spraying the cleaning medium to the gap (220) through the spraying assembly (120). The spraying assembly (120) includes a spraying cavity (121), the spraying cavity (121) is provided with an inlet (122), the liquid inlet assembly (110) is communicated with the inlet (122).

2. The semiconductor wet cleaning apparatus according to claim 1, wherein The spraying cavity (121) is provided with a grid hole (123), and the inner cavity of the spraying cavity (121) is communicated with the gap (220) through the grid hole (123). The spraying cavity (121) is an annular cavity, and the cross-sectional area of the first end opening of the spraying cavity (121) is smaller than the cross-sectional area of the second end opening in the axial direction of the cavity.

3. The semiconductor wet cleaning apparatus according to claim 2, wherein The spraying cavity (121) includes an inclined top wall (1211), an inner ring wall (1213), an inclined bottom wall (1212) and an outer ring wall (1214) connected in sequence.

4. The semiconductor wet cleaning apparatus according to claim 3, wherein The inclined top wall (1211) is connected to the top of the gap (220), the inclined bottom wall (1212) is arranged in a spaced manner with the bottom of the gap (220), the grid hole (123) is distributed on the inclined bottom wall (1212), the inlet (122) is arranged on the region of the inclined top wall (1211) close to the inner ring wall (1213), and the inlet (122) is arranged in a spaced manner with the inner ring wall (1213). The liquid inlet assembly (110) includes a liquid inlet branch pipe (111), an air inlet branch pipe (112), a liquid inlet main pipe (113), a water mist generator (114) and a nozzle (115).

5. The semiconductor wet cleaning apparatus according to claim 1, wherein The liquid inlet branch pipe (111) and the air inlet branch pipe (112) are connected with the input end of the water mist generator (114) respectively, the liquid inlet main pipe (113) is connected with the output end of the water mist generator (114), and the nozzle (115) is connected to one end of the liquid inlet main pipe (113) away from the water mist generator (114) and connected with the spraying assembly (120). The liquid inlet assembly (110) further includes a first control valve (116), a second control valve (117), a first flow detection element (118) and a second flow detection element (119).

6. The semiconductor wet cleaning apparatus according to claim 5, wherein ​ The first control valve (116) and the first flow detection element (118) are arranged in the liquid inlet branch (111), and the first control valve (116) is electrically connected with the first flow detection element (118); The second control valve (117) and the second flow detection element (119) are arranged in the gas inlet branch (112), and the second control valve (117) is electrically connected with the second flow detection element (119).

7. The semiconductor wet cleaning apparatus according to claim 5, wherein The spraying assembly (120) comprises an annular spraying cavity (121), and a plurality of inlets (122) are uniformly arranged along the circumference of the spraying cavity (121); The liquid inlet assembly (110) comprises a plurality of nozzles (115), and the plurality of nozzles (115) are in one-to-one correspondence with the plurality of inlets (122).

8. The semiconductor wet cleaning apparatus according to claim 1, wherein The self-cleaning device (100) further comprises a liquid discharge assembly (130), and the liquid discharge assembly (130) comprises a liquid discharge box (131), a liquid discharge main pipe (132), a gas-liquid separator (133), a waste gas branch pipe (134), and a waste liquid branch pipe (135); The liquid discharge box (131) is located below the protective cover (200) and is used for receiving the cleaning medium flowing out through the gap (220), the liquid discharge main pipe (132) is connected between the liquid discharge box (131) and the input end of the gas-liquid separator (133), and the waste gas branch pipe (134) and the waste liquid branch pipe (135) are respectively connected with the output end of the gas-liquid separator (133).

9. A self-cleaning method of a semiconductor wet cleaning apparatus, applied to the semiconductor wet cleaning apparatus according to any one of claims 1 to 8, characterized by, The self-cleaning method comprises: The spraying assembly (120) arranged in the gap (220) is used to spray the cleaning medium into the gap (220) to clean the pollutants accumulated in the gap (220) by the cleaning medium.

10. The self-cleaning method according to claim 9, characterized in that, The liquid inlet assembly (110) comprises a water mist generator (114); The self-cleaning method comprises: The water mist generator (114) is used to generate the water mist cleaning medium and spray the water mist cleaning medium into the gap (220) through the spraying assembly (120) to clean the pollutants accumulated in the gap (220).

11. The self-cleaning method according to claim 10, wherein The water mist generator (114) generates the water mist cleaning medium, comprising: According to a preset flow ratio, the cleaning medium and the gas are respectively introduced into the water mist generator (114) to generate the water mist cleaning medium by the water mist generator (114).

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