Substrate processing apparatus and substrate processing method

Abstract

Disclosed are a substrate processing apparatus and a substrate processing method. The substrate processing apparatus includes: a chamber including a processing space defined therein; a substrate supporting unit configured to support a substrate in the processing space; a microwave unit configured to supply microwaves to the processing space; a window member disposed below the microwave unit and configured to transmit microwaves supplied from the microwave unit; a heat transfer plate disposed in the processing space to be spaced apart from the window member by a predetermined distance, and configured to be heated by the microwaves supplied to the processing space and to transfer heat to the substrate; and a controller configured to control the microwave unit.

Description

Technical Field

[0001] The present invention relates to a substrate processing device and a substrate processing method, and more particularly to a substrate processing device for uniformly heating a substrate using microwaves. Background Art

[0002] Typically, semiconductor chips are manufactured through a series of processes, such as a process of depositing a thin film on a substrate surface, an etching process, a cleaning process, and a drying process. During these processes, the substrate needs to meet the optimal conditions for implementing each process. For example, the etching or deposition process is implemented by physical or chemical methods. The substrate can be heated to a suitable temperature to activate the reaction between the substrate and the etchant or material used for deposition.

[0003] Among various methods of increasing the temperature of a substrate, a substrate processing apparatus using plasma adopts a method of increasing the temperature of a substrate using a heating device (heating wire) of a substrate supporting unit on which the substrate is placed. In the case of a conventional substrate heating method using a heater, it takes a long time to increase and decrease the temperature, and it is difficult to uniformly heat the entire substrate.

[0004] As a conventional method for solving this problem, a method of heating a substrate using a microwave unit on an upper side of a chamber has been proposed.

[0005] Figure 1 is a view schematically showing a conventional substrate processing apparatus.

[0006] like Figure 1 As shown, the substrate processing device 1 may include a chamber 100, a substrate supporting unit 200, a window member 310, and a microwave unit 500. When the microwave unit 500 is used to heat the substrate W, the substrate W is raised using the lifting pins 252 arranged in the substrate supporting unit 200, and the microwaves generated by the microwave unit 500 pass through the window member 310 and reach the substrate W, thereby heating the substrate W. This method shortens the time required for heating, but there is a problem in that, since the microwaves cannot reach the entire surface of the substrate W uniformly, there is a temperature difference between the regions of the substrate W. In detail, since the microwaves first reach the peripheral region W2 of the substrate W, the peripheral region W2 of the substrate W is heated first, and then the central region W1 of the substrate W is heated. Therefore, the temperature of the peripheral region W2 of the substrate W and the temperature of the central region W1 of the substrate W are different from each other, resulting in defects in the semiconductor chip and resulting in a reduction in yield.

[0007] Therefore, a new technology for uniformly transmitting microwaves generated by a microwave unit to the entire surface of a substrate is required. Summary of the invention

[0008] The present invention aims to solve the above problems, and an object of the present invention is to provide a substrate processing device including a microwave unit and a substrate processing method, which can transmit microwaves supplied to a processing space in a chamber to a substrate, thereby improving the temperature uniformity of the entire surface of the substrate.

[0009] Objects to be achieved by the present invention are not limited to the above-mentioned objects, and other objects not mentioned herein will be clearly understood by those skilled in the art from the following description.

[0010] According to one aspect of the present invention, the above and other objects can be achieved by providing a substrate processing device, which includes: a chamber including a processing space defined therein; a substrate supporting unit configured to support a substrate in the processing space; a microwave unit configured to supply microwaves to the processing space; a window member arranged below the microwave unit and configured to transmit the microwaves supplied from the microwave unit; a heat transfer plate arranged in the processing space to be spaced a predetermined distance from the window member and configured to be heated by the microwaves supplied to the processing space and transfer heat to the substrate; and a controller configured to control the microwave unit.

[0011] In one embodiment, the heat transfer plate may include a central region and a peripheral region formed along an outer peripheral surface of the central region, and the peripheral region of the heat transfer plate may include openings formed therein to allow microwaves to pass through the peripheral region of the heat transfer plate.

[0012] In one embodiment, the heat transfer plate may be made of a material comprising silicon, or may be coated with silicon.

[0013] In one embodiment, the microwave unit may include a power source configured to generate microwaves and a ring waveguide configured to transmit the microwaves to the processing space in the chamber.

[0014] In one embodiment, the waveguide may include a plurality of slots formed in an inner circumference thereof, and the plurality of slots may be arranged to be spaced apart from each other at regular intervals along the inner circumference of the waveguide.

[0015] In one embodiment, the central region of the heat transfer plate may include at least one hole formed therein.

[0016] In one embodiment, the window member may include an upper electrode to generate plasma in the processing space.

[0017] In one embodiment, the upper electrode may be a transparent electrode.

[0018] In one embodiment, the substrate supporting unit may include lift pins to elevate and lower the substrate, and the controller may control the operation of the lift pins to elevate the substrate while driving the microwave unit.

[0019] According to another aspect of the present invention, there is provided a substrate processing method for etching a thin film formed on a substrate, the substrate processing method comprising: a modification step of supplying a modifying gas to a processing space in a chamber accommodating the substrate to modify the substrate; a first purge step of supplying a purge gas to the processing space to remove the modifying gas remaining in the processing space; an etching step of supplying microwaves to the processing space, and transferring heat from a heat transfer plate heated by the supplied microwaves to the substrate, thereby etching the modified substrate in units of atomic layers; and a second purge step of supplying a purge gas to the processing space to remove etching byproducts remaining in the processing space.

[0020] In one embodiment, the cycle including the modifying step to the second purge step may be repeated one or more times.

[0021] In one embodiment, the heat transfer plate may include a central region and a peripheral region formed along an outer peripheral surface of the central region, and the peripheral region of the heat transfer plate may include openings formed therein to allow microwaves to pass through the peripheral region of the heat transfer plate.

[0022] In one embodiment, during the etching step, lift pins may be used to move the modified substrate to a position below the heat transfer plate.

[0023] In one embodiment, the etching step may be performed at a temperature of 300° C. or higher.

[0024] In one embodiment, in the modifying step, the modifying gas supplied to the process space may be converted into plasma, and in the etching step, only microwaves may be supplied to the process space.

[0025] According to another aspect of the present invention, there is provided a substrate processing apparatus, the substrate processing apparatus comprising: a chamber including a processing space defined therein; a substrate supporting unit including lifting pins to support a substrate in the processing space; a gas supply unit configured to supply gas to the processing space; a plasma generating unit configured to convert the supplied gas into plasma; a microwave unit configured to supply microwaves to the processing space; a window member disposed below the microwave unit and configured to transmit the microwaves supplied from the microwave unit; and a heat transfer plate disposed below the microwave unit. in a processing space to be separated from the window member by a predetermined distance and configured to be heated by microwaves supplied to the processing space and to transfer heat to the substrate; and a controller configured to control the plasma generating unit, the gas supplying unit and the microwave unit, wherein a heat transfer plate includes a central area and a peripheral area formed along an outer peripheral surface of the central area, the central area of ​​the heat transfer plate includes at least one hole formed therein, the peripheral area of ​​the heat transfer plate includes an opening formed therein, and the microwaves supplied by the microwave unit are transmitted to the central area of ​​the heat transfer plate to heat the central area, and are supplied to the substrate through the opening in the peripheral area of ​​the heat transfer plate to heat the substrate.

[0026] In one embodiment, the controller may perform control such that the gas supply unit is not driven while the microwave unit is driven.

[0027] In one embodiment, the plasma supply unit may convert the gas supplied by the gas supply unit into plasma, and the gas converted into plasma may pass through at least one hole in the central region of the heat transfer plate and the opening in the peripheral region of the heat transfer plate to be supplied to the substrate.

[0028] In one embodiment, the heat transfer plate may be made of a material comprising silicon, or may be coated with silicon.

[0029] In one embodiment, the substrate processing apparatus may be an apparatus configured to etch a substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] The above and other objects, features and other advantages of the present invention will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which:

[0031] Figure 1 is a view showing a conventional substrate processing apparatus;

[0032] Figure 2 is a view showing a substrate processing apparatus according to an embodiment of the present invention;

[0033] Figure 3is a view showing a window member according to an embodiment of the present invention;

[0034] Figure 4 is a view showing a waveguide according to an embodiment of the present invention;

[0035] Figure 5 is a view showing a heat transfer plate according to an embodiment of the present invention; and

[0036] Figure 6 is a flowchart illustrating a substrate processing method according to an embodiment of the present invention. DETAILED DESCRIPTION

[0037] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily implement these embodiments. However, the present invention can be implemented in many different forms and should not be construed as being limited to the embodiments set forth herein.

[0038] In the following description of the embodiments of the present invention, detailed description of known functions or configurations incorporated herein will be omitted when it may unnecessarily obscure the subject matter of the present invention. In all drawings, components performing similar functions and operations are denoted by the same reference numerals.

[0039] At least some of the terms used in this specification are defined in consideration of the functions obtained according to the present invention, and may be changed according to the intention of the user or operator or common practice. Therefore, the definitions of these terms should be determined based on the entire content of this specification.

[0040] As used herein, unless the context clearly indicates otherwise, a singular form may include a plural form. In addition, unless otherwise mentioned, the terms "include", "comprises" or "has" described herein should be interpreted as not excluding other elements, but further including such other elements.

[0041] In the drawings, the size or shape of elements and the thickness of lines may be exaggerated for clarity and convenience of description.

[0042] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, and the same or similar elements are denoted by the same reference numerals even though they are shown in different drawings and their redundant description will be omitted.

[0043] Figure 2 is a view showing a substrate processing apparatus according to an embodiment of the present invention.

[0044] refer to Figure 2, the substrate processing apparatus 10 may include a chamber 100 , a substrate supporting unit 200 , a plasma generating unit 300 , a gas supply unit 400 , a microwave unit 500 , and a controller 600 .

[0045] The chamber 100 may have a processing space defined therein to allow a plasma process to be performed therein, and may include a body 110 and a cover 120. The body 110 may have an open upper surface and may have an internal space defined therein. In one example, the body 110 may have a cylindrical shape having an open upper surface and having an internal space defined therein. The cover 120 may be arranged on the upper end of the body 110. The cover 120 may seal the open upper surface of the body 110. In one example, the cover 120 may have a cylindrical shape having an open lower surface. The body 110 and the cover 120 may be assembled with each other to form the chamber 100.

[0046] The chamber 100 may include an exhaust port 102 formed at a lower side thereof, and the exhaust port 102 may be connected to an exhaust line installed with a pump P. The pump P may exhaust reaction byproducts generated during a plasma process and gas remaining in the chamber 100 to the outside of the chamber 100 through the exhaust line. In this case, the pressure in the internal space of the chamber 100 may be reduced to a predetermined pressure.

[0047] The chamber 100 may include an opening 104 formed in a sidewall thereof. The opening 104 may serve as a passage for a substrate W to enter the chamber 100. The opening 104 may be configured to be opened and closed by a door assembly.

[0048] The substrate supporting unit 200 may be disposed in a lower region of the chamber 100. The substrate supporting unit 200 may support the substrate W using an electrostatic force. However, the embodiment is not limited thereto. The substrate W may be supported in various ways, such as mechanical clamping or vacuum support.

[0049] The substrate supporting unit 200 may include a supporting body 210 and an electrostatic chuck 220 disposed on an upper surface of the supporting body 210. The electrostatic chuck 220 may be configured to electrostatically attract and hold the substrate W, and may include a ceramic layer provided with electrodes.

[0050] According to an embodiment of the present invention, although not shown, a heating member and a cooling member may be provided in the substrate supporting unit 200 to maintain the process temperature of the substrate W. The heating member may be a heating coil, and the cooling member may be provided as a cooling line through which a refrigerant flows.

[0051] In order to support the support body 210 and the electrostatic chuck 220, a base 230 may be provided below the support body 210. The base 230 may be formed in a cylindrical shape having a predetermined height and may have a space defined therein. The lift pin assembly 250 may be disposed in the base 230.

[0052] The lift pin assembly 250 according to an embodiment of the present invention may include a lift pin 252 , a lift pin supporting member 254 , a lift pin driving unit 256 , and a bellows 258 .

[0053] The substrate supporting unit 200 may include a plurality of lift pins 252 disposed at regular intervals to load and unload the substrate W. The substrate supporting unit 200 may include a plurality of pin holes 202 vertically penetrating the substrate supporting unit 200 to allow the lift pins 252 to vertically move therethrough.

[0054] A plurality of lift pins 252 may be provided, and each of the plurality of lift pins 252 may be received in a corresponding one of the pin holes 202 formed in the substrate supporting unit 200. The diameter of the lift pin 252 may be formed slightly smaller than that of the pin hole 202.

[0055] The lift pins 252 may be inserted into and fixed in lift pin brackets (not shown). The number of lift pin brackets (not shown) may be the same as the number of lift pins 252 , and the lift pin brackets (not shown) may be coupled and fixed to the lift pin supporting member 254 .

[0056] The lift pin support member 254 may be disposed in the chamber 100 and may support the lift pins 252 and the lift pin brackets (not shown). The lift pin support member 254 may be formed in a plate shape to support a plurality of lift pins 252 and a plurality of lift pin brackets (not shown). However, the embodiment is not limited thereto. The lift pin support member 254 may be connected to the lift pin driving unit 256 and may be vertically moved by the lift pin driving unit 256.

[0057] The lift pin driving unit 256 can raise and lower the lift pin support member 254. Due to the operation of the lift pin driving unit 256, the lift pin support member 254 can be moved vertically, and thus the lift pin 252 can be moved along the pin hole 202. The lift pin driving unit 256 can be arranged outside the chamber 100. The lift pin driving unit 256 can adopt a hydraulic cylinder, a pneumatic cylinder, etc. However, the embodiment is not limited to this. Although the embodiment of the present invention is described as including one lift pin driving unit 256, the embodiment is not limited to this. A plurality of lift pin driving units 256 can be provided to raise and lower the corresponding lift pins 252.

[0058] The bellows 258 may be disposed on a portion of the lift pin driving unit 256 extending to the outside of the chamber 100. The bellows 258 may have a structure capable of expansion and contraction, and may be disposed to surround the lift pin driving unit 256. Therefore, the interior of the chamber 100 may be isolated from the outside, and thus the vacuum state in the chamber 100 may be maintained even when the lift pin supporting member 254 moves vertically.

[0059] The plasma generating unit 300 may generate plasma in the processing space of the chamber 100. The plasma may be generated in a region above the substrate supporting unit 200 in the chamber 100. According to an embodiment of the present invention, the plasma generating unit 300 may generate plasma in the processing space of the chamber 100 using a capacitively coupled plasma (CCP) source.

[0060] However, the embodiment is not limited thereto. The plasma generating unit 300 may also generate plasma in the processing space of the chamber 100 using another type of plasma source, such as an inductively coupled plasma (ICP) source or microwaves.

[0061] The plasma generating unit 300 may include a high frequency power supply 302 and a matching device 304. The high frequency power supply 302 may supply high frequency power to any one of the upper electrode and the lower electrode to generate a potential difference between the upper electrode and the lower electrode. Here, the upper electrode may be arranged in a window member 310 to be described later, and the lower electrode may be a substrate supporting unit 200. The high frequency power supply 302 may be connected to an upper electrode 312 arranged in the window member 310, and the lower electrode may be grounded (not shown).

[0062] Figure 3 2 is a view showing a window member according to an embodiment of the present invention.

[0063] refer to Figure 3 , the window member 310 according to an embodiment of the present invention may include a first window 311, an upper electrode 312, and a second window 313. The window member 310 may be configured to allow microwaves generated by a microwave unit 500 (to be described later) to be transmitted to the substrate W without loss (or with minimal loss).

[0064] The upper electrode 312 may be stacked on the first window 311. The upper electrode 312 may be formed to have a thickness that allows microwaves for heating the substrate W to pass therethrough. In an example, the upper electrode 312 may be a transparent electrode and may be ITO. Alternatively, the upper electrode 312 may include AZO, FTO, ATO, SnO 2 、ZnO、IrO 2 、RuO 2, graphene, metal nanowires, CNTs, mixtures thereof, or multiple layers thereof. The upper electrode 312 may be formed to have a first thickness or less. The first thickness is a thickness that allows microwaves to pass through the determined material. The first thickness may vary based on the material selected as the upper electrode 312. In this description, the thickness that allows microwaves to pass through the determined material may be a thickness that does not greatly affect the transmittance of the determined material. In an example, if the upper electrode 312 is made of ITO, the first thickness may be set to 1 μm or less. The upper electrode 312 and the substrate support unit 200 may be combined to generate an electric field due to high-frequency power applied from the high-frequency power supply 302 to at least one of the upper electrode and the substrate support unit. In an example, the high-frequency power supply 302 may apply high-frequency power to the upper electrode 312, and the substrate support unit 200 may be grounded (not shown).

[0065] The first window 311 may be made of a material that allows microwaves for heating the substrate W to pass therethrough, and may be made of a corrosion-resistant material. The first window 311 according to an embodiment of the present invention may be quartz.

[0066] The second window 313 may be stacked on the upper electrode 312. The second window 313 may be made of a material that allows microwaves for heating the substrate W to pass therethrough, and may be, for example, quartz.

[0067] Reference again Figure 2 , the shower head 320 may be arranged in the chamber 100 to be spaced a predetermined distance from the window member 310 and vertically opposite to the electrostatic chuck 220. The shower head 320 may include a plurality of gas injection holes formed therein to uniformly inject gas into the interior of the chamber 100, and may be formed to have a larger diameter than the electrostatic chuck 220. The microwave unit 500 may be arranged above the shower head 320 to quickly increase the temperature of the substrate W. In this case, the shower head 320 may be made of a transparent material to allow microwaves supplied from the microwave unit 500 to pass through and be transmitted to the substrate W. Although in Figure 2 The middle showerhead 320 is illustrated as being disposed between the heat transfer plate 530 and the window member 310 , but the embodiment is not limited thereto.

[0068] The gas supply unit 400 may supply the gas required for the process to the inside of the chamber 100. The gas supply unit 400 may include a gas source 402, a gas supply line 404, and a gas nozzle. The gas supply line 404 may connect the gas source 402 to the gas nozzle. The gas supply line 404 may supply the gas stored in the gas source 402 to the gas nozzle. A gas supply valve 406 may be installed on the gas supply line 404 to open and close a channel of the gas supply line 404, or to adjust the amount of fluid flowing through the channel.

[0069] Despite Figure 2 4 shows one gas source 402 and one gas supply valve 406, but the gas supply unit of the present invention may include a plurality of gas sources to supply a plurality of gases to the chamber, and a plurality of gas supply valves to independently control the supply of corresponding gases.

[0070] The microwave unit 500 may apply microwaves to the processing space in the chamber 100. The microwave unit 500 may include a power supply 510 and a waveguide 520.

[0071] The power supply 510 may include a matching network 512. The power supply 510 may be used to generate microwaves, and the generated microwaves may have a frequency of about 2.3 GHz to about 2.5 GHz. The power supply 510 may be connected to the waveguide 520, and the matching network 512 may be arranged between the power supply 510 and the waveguide 520. The matching network 512 may match the microwaves supplied from the power supply 510 to a predetermined frequency.

[0072] The waveguide 520 may be formed in a tube shape having a polygonal or circular cross section. The waveguide 520 may include a conductive inner surface. In an example, the inner surface of the waveguide 520 may be made of gold or silver. The waveguide 520 may provide a channel through which microwaves generated by the power supply 510 are transmitted.

[0073] Figure 4 is a view showing a waveguide according to an embodiment of the present invention.

[0074] refer to Figure 2 and Figure 4 , the waveguide 520 according to the embodiment of the present invention may include a first portion 522, a second portion 524, and a third portion 526. The first portion 522, the second portion 524, and the third portion 526 may be formed integrally with each other.

[0075] The first part 522 may be formed in an annular shape and may include a cutting portion. In addition, the first part 522 may include a plurality of slots 528 formed in its inner periphery. The slots 528 may be formed as through slots penetrating the side surface of the first part 522 and may be selectively filled with a material capable of transmitting microwaves. The slots 528 may have a rectangular shape elongated in the longitudinal direction of the waveguide 520. A plurality of slots 528 may be arranged to be spaced apart from each other at regular intervals along the inner periphery of the first part 522.

[0076] The second portion 524 may extend from the first portion 522. In an example, the second portion 524 may extend upward from an upper surface of the first portion 522. The second portion 524 may be coupled to the upper surface of the first portion 522 at a position adjacent to a cut portion of the first portion 522.

[0077] The third portion 526 may extend from the second portion 524. In an example, the third portion 526 may extend in a horizontal direction from an upper surface of the second portion 524. The third portion 526 may be connected to the power source 510.

[0078] Figure 5 : are views showing a heat transfer plate according to an embodiment of the present invention.

[0079] refer to Figure 2 and Figure 5 , the heat transfer plate 530 according to an embodiment of the present invention may be disposed in the processing space in the chamber 100, and may be disposed below the showerhead 320. In another embodiment, the heat transfer plate 530 may be disposed between the showerhead 320 and the window member 310. The heat transfer plate 530 may be used to uniformly transfer the microwaves supplied from the microwave unit 500 to the substrate W. The heat transfer plate 530 may have a disc shape, and may include a central region S1 and a peripheral region S2 formed along an outer peripheral surface of the central region S1.

[0080] The heat transfer plate 530 may include a plurality of holes 532 formed in a central region S1 thereof. The holes 532 may have a predetermined size and may allow the gas converted into plasma by the plasma generation unit 300 to pass therethrough. In detail, the gas converted into plasma by the plasma generation unit 300 may be decomposed into ions, radicals, and electrons, and the decomposed ions, radicals, and electrons may pass through the holes 532 formed in the heat transfer plate 530 to be supplied to the substrate W. Although the holes 532 in the central region S1 of the heat transfer plate 530 according to an embodiment of the present invention are shown to have the same size, the embodiment is not limited thereto. In addition, a portion of the central region S1 of the heat transfer plate 530 where the holes 532 are not provided may be heated by the microwaves supplied from the microwave unit 500, thereby transferring heat to the central region W1 of the substrate W.

[0081] The heat transfer plate 530 may include a plurality of openings 536 formed in the peripheral region S2 thereof. In an example, four openings 536 may be formed in the peripheral region S2, but the embodiment is not limited thereto. The openings 536 may not only supply the gas converted into plasma to the substrate W, but may also directly supply the microwaves supplied from the microwave unit 500 to the substrate W. The microwaves supplied from the microwave unit 500 may be supplied to the periphery of the substrate W to heat the peripheral region W2 of the substrate W.

[0082] The heat transfer plate 530 may be made of a material having corrosion resistance, plasma resistance, heat resistance, and high thermal conductivity. In an example, the heat transfer plate 530 may be made of a material containing silicon, or may be coated with silicon. The heat transfer plate 530 according to an embodiment of the present invention may be made of silicon carbide (SiC), but the embodiment is not limited thereto. Alternatively, the heat transfer plate 530 may also be made of a material capable of transmitting microwaves.

[0083] The controller 600 can comprehensively control the operation of the substrate processing device 10 configured as described above. The controller 600 can be, for example, a computer, and can include a central processing unit (CPU), a random access memory (RAM), a read-only memory (ROM), and an auxiliary storage device. The CPU can operate based on a program or process condition stored in the ROM or the auxiliary storage device to control the overall operation of the device. In an example, the controller 600 can control the operation of the lift pin assembly 250, and can also control the supply operation of various gases of the gas supply unit 400 and the operation of the power supply 302 of the plasma generation unit 300. In addition, the computer-readable program required for the control can be stored in a storage medium. The storage medium can include, for example, a floppy disk, a compact disk (CD), a CD-ROM, a hard disk, a flash memory, a DVD, etc. The controller 600 can be arranged inside or outside the substrate processing device 10. In the case where the controller 600 is arranged outside the substrate processing device 10, the controller 600 can control the substrate processing device 10 using a wired or wireless communication method.

[0084] To perform this process, the controller 600 according to an embodiment of the present invention may perform control so that gas is supplied to the processing space in the chamber 100 and the supplied gas is converted into plasma by the plasma generation unit 300. In addition, the controller 600 may control the lift pin driving unit 256 to vertically move the lift pins 252 to load / unload the substrate W before / after performing heat treatment on the substrate W using the microwave unit 500.

[0085] As described above, since the heat transfer plate is arranged in the processing space in the chamber, the entire surface of the substrate can be uniformly heated. In more detail, the heat transfer plate can be arranged below the showerhead, and the microwaves supplied from the microwave unit can be supplied to the substrate. The heat transfer plate may include a central area and a peripheral area formed along the outer peripheral surface of the central area. The central area of ​​the heat transfer plate may include a hole formed therein, and its peripheral area may include an opening formed therein. The gas converted into plasma can be supplied to the substrate through the hole formed in the central area and the opening formed in the peripheral area. In addition, the microwaves supplied from the microwave unit can be directly supplied to the peripheral area of ​​the substrate through the opening formed in the peripheral area of ​​the heat transfer plate, and the portion of the central area of ​​the heat transfer plate where the hole is not provided can be heated by the microwave, thereby supplying heat to the central area of ​​the substrate. Therefore, the substrate can be uniformly heated, thereby reducing defects in semiconductor chips and improving yield.

[0086] Figure 6 is a flowchart illustrating a substrate processing method according to an embodiment of the present invention.

[0087] refer to Figure 6 , according to an embodiment of the present invention, a method for etching a thin film formed on a substrate may include: a modification step (S100), supplying a modification gas to a processing space in a chamber provided with a substrate to modify the substrate; a first purge step (S200), supplying a purge gas to the processing space to remove the modification gas remaining in the processing space; an etching step (S300), supplying microwaves to the processing space to etch the modified substrate in units of atomic layers; and a second purge step (S400), supplying a purge gas to the processing space to remove etching byproducts remaining in the processing space. The modification step to the second purge step (S100 to S400) may be set as a cycle, and the cycle may be repeatedly performed one or more times to etch the substrate to a desired thickness.

[0088] The modification step (S100) is a step of supplying a modification gas to a processing space in a chamber in which a substrate is disposed to modify the substrate. The modification gas may be supplied from a gas supply unit, and the supplied modification gas may be converted into plasma and then supplied to the substrate. The modification gas converted into plasma may cause a chemical reaction with the substrate to modify the surface layer of the substrate.

[0089] The first purge step (S200) is a step of supplying a purge gas through a gas supply unit to remove the modified gas remaining in the chamber. The purge gas may be supplied after the supply of the modified gas is interrupted, and may be directly supplied to the processing space in the chamber without using plasma. Due to the supply of the purge gas, the modified gas and reaction byproducts remaining in the chamber after being supplied in the modifying step (S100) may be removed. An inert gas (such as argon (Ar), helium (He) or nitrogen (N 2 )) can be used as a purge gas.

[0090] The etching step (S300) is a step of supplying microwaves to the processing space in the chamber so as to etch the modified substrate in units of atomic layers. By supplying microwaves (i.e., heat) to the substrate using a microwave unit, the modified substrate can be etched in units of atomic layers. According to an embodiment of the present invention, a microwave unit can be used to supply heat of 300°C or higher to the substrate. In this case, the substrate can be raised by a lifting pin assembly to be arranged near the heat transfer plate and below the showerhead. The microwaves supplied from the microwave unit can pass through an opening formed in the peripheral area of ​​the heat transfer plate and can be supplied to the peripheral area of ​​the substrate. In addition, the microwaves can heat the central area of ​​the heat transfer plate, such as a portion of the central area of ​​the heat transfer plate where no holes are set, thereby transferring heat to the substrate. In this way, since the heat transfer plate is arranged in the chamber, heat can be uniformly supplied to the entire surface of the substrate, and the entire surface of the substrate can be uniformly etched.

[0091] The second purge step (S400) is a step of supplying a purge gas through a gas supply unit to remove etching byproducts remaining in the chamber. The purge gas may be supplied after the microwave supply is interrupted, and may be directly supplied to the processing space in the chamber without using plasma. Due to the supply of the purge gas, the etching byproducts generated during the etching step (S300) may be removed. An inert gas (such as argon (Ar), helium (He), or nitrogen (N 2 )) can be used as a purge gas.

[0092] As is apparent from the above description, according to the present invention, a heat transfer plate may be arranged in a processing space in a chamber, thereby improving temperature uniformity across a surface of a substrate.

[0093] Effects achievable by the present invention are not limited to the above-mentioned effects, and other effects not mentioned herein will be clearly understood by those skilled in the art from the above description.

[0094] It will be apparent to those skilled in the art that various changes in form and detail may be made without departing from the basic features of the invention as set forth herein. Therefore, the above detailed description is not intended to be interpreted as limiting the invention in all respects and should be considered as exemplary. The scope of the invention should be determined by reasonable interpretation of the appended claims, and all equivalent modifications made without departing from the invention should be included in the appended claims.

Claims

1. A substrate processing device, comprising: a chamber including a processing space defined therein; a substrate supporting unit configured to support a substrate in the processing space; a microwave unit configured to supply microwaves to the processing space; a window member disposed below the microwave unit, the window member being configured to transmit microwaves supplied from the microwave unit; a heat transfer plate arranged in the processing space to be spaced apart from the window member by a predetermined distance, the heat transfer plate being configured to be heated by microwaves supplied to the processing space and to transfer heat to the substrate; as well as A controller is configured to control the microwave unit.

2. The substrate processing apparatus according to claim 1, wherein: The heat transfer plate comprises: Central area; and a peripheral region formed along an outer peripheral surface of the central region, and Wherein, the peripheral region of the heat transfer plate includes openings formed therein to allow the microwaves to pass through the peripheral region of the heat transfer plate.

3. The substrate processing apparatus according to claim 1, wherein: The heat transfer plate is made of a material containing silicon, or is coated with silicon.

4. The substrate processing apparatus according to claim 1, wherein: The microwave unit comprises: a power source configured to generate microwaves; and A ring waveguide is configured to transmit the microwaves to the processing space in the chamber.

5. The substrate processing apparatus according to claim 4, wherein: The waveguide includes a plurality of slots formed in an inner periphery thereof, and wherein the plurality of slots are arranged to be spaced apart from each other at regular intervals along the inner periphery of the waveguide.

6. The substrate processing apparatus according to claim 2, wherein: The central region of the heat transfer plate includes at least one hole formed therein.

7. The substrate processing apparatus according to claim 1, wherein: The window member includes an upper electrode to generate plasma in the processing space.

8. The substrate processing apparatus according to claim 7, wherein: The upper electrode is a transparent electrode.

9. The substrate processing apparatus according to claim 1, wherein: The substrate supporting unit includes lift pins that raise and lower the substrate, and The controller controls the operation of the lifting pins to lift the substrate while driving the microwave unit.

10. A substrate processing method for etching a thin film formed on a substrate, the substrate processing method comprising: a modifying step of supplying a modifying gas to a processing space in a chamber accommodating the substrate to modify the substrate; a first purge step of supplying a purge gas to the processing space to remove the modified gas remaining in the processing space; an etching step of supplying microwaves to the processing space and transferring heat from a heat transfer plate heated by the supplied microwaves to the substrate, thereby etching the modified substrate in units of atomic layers; as well as The second purge step is to supply a purge gas to the processing space to remove etching byproducts remaining in the processing space.

11. The substrate processing method according to claim 10, wherein: The cycle including the modifying step to the second purging step is repeatedly performed one or more times.

12. The substrate processing method according to claim 10, wherein: The heat transfer plate comprises: Central area; and a peripheral region formed along an outer peripheral surface of the central region, and Wherein, the peripheral region of the heat transfer plate includes openings formed therein to allow the microwaves to pass through the peripheral region of the heat transfer plate.

13. The substrate processing method according to claim 10, wherein: In the etching step, the modified substrate is moved to a position below the heat transfer plate using lift pins.

14. The substrate processing method according to claim 10, wherein: The etching step is performed at a temperature of 300° C. or higher.

15. The substrate processing method according to claim 10, wherein: In the modifying step, the modifying gas supplied to the processing space is converted into plasma, and Wherein, in the etching step, only microwaves are supplied to the processing space.

16. A substrate processing device, comprising: a chamber including a processing space defined therein; a substrate supporting unit including lift pins to support a substrate in the processing space; a gas supply unit configured to supply gas to the processing space; a plasma generating unit configured to convert the supplied gas into plasma; a microwave unit configured to supply microwaves to the processing space; a window member disposed below the microwave unit, the window member being configured to transmit microwaves supplied from the microwave unit; a heat transfer plate arranged in the processing space to be spaced apart from the window member by a predetermined distance, the heat transfer plate being configured to be heated by microwaves supplied to the processing space and to transfer heat to the substrate; as well as a controller configured to control the plasma generating unit, the gas supply unit, and the microwave unit, Wherein, the heat transfer plate comprises: Central area; and a peripheral region formed along an outer peripheral surface of the central region, wherein the central region of the heat transfer plate includes at least one hole formed therein, wherein the peripheral region of the heat transfer plate includes an opening formed therein, and The microwaves supplied by the microwave unit are transmitted to the central region of the heat transfer plate to heat the central region, and are supplied to the substrate through the openings in the peripheral region of the heat transfer plate to heat the substrate.

17. The substrate processing apparatus according to claim 16, wherein: The controller performs control so that the gas supply unit is not driven while the microwave unit is driven.

18. The substrate processing apparatus according to claim 16, wherein: The plasma supply unit converts the gas supplied by the gas supply unit into plasma, and wherein the gas converted into plasma passes through the at least one hole in the central region of the heat transfer plate and the opening in the peripheral region of the heat transfer plate to be supplied to the substrate.

19. The substrate processing apparatus according to claim 16, wherein: The heat transfer plate is made of a material containing silicon, or is coated with silicon.

20. The substrate processing apparatus according to claim 16, wherein: The substrate processing apparatus is an apparatus configured to etch the substrate.

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