Temperature measurement system and preparation method thereof

Abstract

The present invention relates to the field of photovoltaic technology and provides a temperature measurement system and a method for manufacturing the same. The method comprises: drawing a circuit diagram of the temperature measurement system according to an application scenario of the temperature measurement system; and forming the circuit structure on the substrate according to the circuit diagram of the temperature measurement system.

Description

Technical Field

[0001] The embodiments of the present application relate to the field of photovoltaic technology, and more specifically, to a temperature measurement system and a preparation method thereof. Background Art

[0002] In the photovoltaic and semiconductor industries, the performance of temperature measurement systems, core temperature measurement components of solar cell and semiconductor manufacturing equipment, directly impacts the equipment's production accuracy and efficiency. Existing temperature measurement systems primarily utilize non-contact, high-temperature radiation measurement, but this method suffers from low accuracy and long response times, making it difficult to meet these requirements. Summary of the Invention

[0003] In a first aspect, the present application provides a method for preparing a temperature measurement system. The temperature measurement system includes a substrate and a circuit structure located on the substrate. The circuit structure includes at least one temperature measurement line. Each temperature measurement line includes at least one stack. Each stack includes a temperature measurement layer and a protective layer located on the temperature measurement layer. The temperature measurement layer includes a positive electrode layer and a negative electrode layer. The positive electrode layer and the negative electrode layer are connected to form a thermoelectric node at the connection. The method for preparing the temperature measurement system includes:

[0004] According to the application scenario of the temperature measurement system, a circuit diagram of the circuit structure of the temperature measurement system is drawn: when the application scenario is scattered-point temperature measurement, the number of temperature measuring lines in the circuit structure is multiple, the number of stacking layers in each temperature measuring line is one, and the multiple temperature measuring lines are spaced apart; when the application scenario is linear multi-point temperature measurement, the number of temperature measuring lines in the circuit structure is one, the number of stacking layers in the temperature measuring line is multiple, and all thermoelectric nodes on the temperature measuring line are spaced apart along the length direction of the temperature measuring line; when the application scenario is temperature field characterization, the number of temperature measuring lines in the circuit structure is multiple, the number of stacking layers in the temperature measuring line is multiple, and the multiple temperature measuring lines are spaced apart, and all thermoelectric nodes on each temperature measuring line are spaced apart along the length direction of the temperature measuring line; and

[0005] According to the circuit diagram of the temperature measurement system, a circuit structure is formed on the substrate.

[0006] The method for preparing a temperature measurement system according to the first aspect of the present application designs a corresponding circuit structure according to different application scenarios (scattered point temperature measurement, linear multi-point temperature measurement, temperature field characterization), including the number of temperature measurement lines, the number of stacks, and the layout of thermoelectric nodes. As a result, the method for preparing the temperature measurement system is highly adaptable. In different application scenarios, the method for preparing the temperature measurement system can flexibly adjust the configuration of the temperature measurement lines and stacks to meet diverse temperature measurement needs. Moreover, by rationally arranging the thermoelectric nodes, more precise temperature distribution measurements can be achieved, thereby improving the accuracy of the overall temperature measurement system. In addition, appropriate temperature measurement line and stack design can shorten the thermoelectric response path and improve the response speed of the system.

[0007] In some embodiments, when the substrate is a special-shaped part, the circuit structure is formed by coating; when the substrate is a regular part, the circuit structure is formed by screen printing.

[0008] In some embodiments, forming the circuit structure by screen printing further includes: selecting a circuit type of the temperature measuring line according to the operating temperature range of the temperature measuring system, and then determining the slurry material of the positive electrode layer and the slurry material of the negative electrode layer; wherein the operating temperature range of the temperature measuring system, the slurry material of the positive electrode layer, and the slurry material of the negative electrode layer corresponding to different circuit types of the temperature measuring line are as follows:

[0009] Circuit Type K: The operating temperature range is between -270 and 1370°C. The slurry materials for the positive electrode layer include nickel-chromium alloy powder, glass powder, dispersant, antioxidant, and diluent. The slurry materials for the negative electrode layer include nickel-aluminum alloy powder, glass powder, dispersant, antioxidant, and diluent.

[0010] Circuit type N: The operating temperature range is between -270 and 1300°C. The slurry materials for the positive electrode layer include nickel-chromium-silicon alloy powder, glass powder, dispersant, antioxidant, and diluent. The slurry materials for the negative electrode layer include nickel-silicon-magnesium alloy powder, glass powder, dispersant, antioxidant, and diluent.

[0011] Circuit Type T: The operating temperature range is between -270 and 400°C. The slurry materials for the positive electrode layer include copper powder, glass powder, dispersant, antioxidant, and diluent. The slurry materials for the negative electrode layer include copper-nickel alloy powder, glass powder, dispersant, antioxidant, and diluent.

[0012] Circuit Type J: The operating temperature range is between -210 and 1200°C. The slurry materials for the positive electrode layer include iron powder, glass powder, dispersant, antioxidant, and diluent. The slurry materials for the negative electrode layer include copper-nickel alloy powder, glass powder, dispersant, antioxidant, and diluent.

[0013] Circuit Type E: Operating temperature range is between -270~1000℃. The slurry materials of the positive electrode layer include nickel-chromium alloy powder, glass powder, dispersant, antioxidant, and diluent. The slurry materials of the negative electrode layer include copper-nickel alloy powder, glass powder, dispersant, antioxidant, and diluent.

[0014] Circuit type R: The operating temperature range is between -50 and 1500°C. The slurry materials of the positive electrode layer include platinum-rhodium alloy powder, glass powder, dispersant, antioxidant, and diluent. The slurry materials of the negative electrode layer include platinum powder, glass powder, dispersant, antioxidant, and diluent.

[0015] Circuit type S: The operating temperature range is between -50 and 1500°C. The slurry materials for the positive electrode layer include platinum-rhodium alloy powder, glass powder, dispersant, and diluent. The slurry materials for the negative electrode layer include platinum powder, glass powder, dispersant, and diluent.

[0016] Circuit type B: The operating temperature range is between 0~1500℃. The slurry materials of the positive electrode layer include platinum-rhodium alloy powder, glass powder, dispersant, and diluent. The slurry materials of the negative electrode layer include platinum powder, glass powder, dispersant, and diluent.

[0017] In some embodiments, forming the circuit structure by screen printing further includes:

[0018] Step S10: printing a temperature measurement layer on the substrate, including: printing a slurry material of a positive electrode layer on the substrate to obtain a positive electrode layer; printing a slurry material of a negative electrode layer on the substrate to obtain a negative electrode layer, connecting the positive electrode layer and the negative electrode layer to form a thermoelectric node at the connection;

[0019] Step S20: performing heat treatment on the temperature measuring layer;

[0020] Step S30: printing a protective layer on the side of the temperature measuring layer facing away from the substrate; and

[0021] Step S40: performing heat treatment on the protective layer.

[0022] When there are multiple temperature measuring lines, in step S10, the positive electrode layer of the multiple temperature measuring lines is obtained by printing once, and the negative electrode layer of the multiple temperature measuring lines is obtained by printing once; in step S30, the protective layer of the multiple temperature measuring lines is obtained by printing once.

[0023] When there are multiple stacks, the circuit structure is formed by screen printing, and steps S10 to S40 are performed in a loop, with each loop of steps S10 to S40 forming one stack.

[0024] In some embodiments, when the substrate is made of a conductive material, before forming the temperature measurement layer, the method for preparing the temperature measurement system further includes: forming an insulating layer on the substrate; and forming the temperature measurement layer on a surface of the insulating layer facing away from the substrate.

[0025] In some embodiments, each temperature measuring layer has an opening facing away from the thermoelectric node, and each stack is flush at one end at the opening; when there are multiple stacks, the lengths of the multiple stacks decrease in the direction away from the substrate; and / or when there are multiple temperature measuring lines, the lengths of the multiple stacks are different along the arrangement direction of the multiple temperature measuring lines.

[0026] In some embodiments, the method for preparing the temperature measurement system further includes: performing a secondary dimension test and / or an electrical performance test on the circuit structure to obtain a hot end module that meets preset standards.

[0027] In some embodiments, the preparation method of the temperature measurement system further includes: assembling the compensation wire, the cold end module, and the hot end module, and performing a temperature point calibration test.

[0028] The second aspect of the present application provides a temperature measurement system. The temperature measurement system includes a substrate and a circuit structure. The circuit structure is located on the substrate. The circuit structure includes at least one temperature measuring line, each temperature measuring line includes at least one stack, each stack includes a temperature measuring layer and a protective layer located on the temperature measuring layer, the temperature measuring layer includes a positive electrode layer and a negative electrode layer, the positive electrode layer and the negative electrode layer are connected, and a thermoelectric node is formed at the connection. Wherein, the number of temperature measuring lines is multiple, the number of stacks in each temperature measuring line is one, and the multiple temperature measuring lines are arranged at intervals; or, the number of temperature measuring lines is one, the number of stacks in the temperature measuring line is multiple, and the thermoelectric nodes of all stacks are arranged at intervals along the length direction of the temperature measuring line; or, the number of temperature measuring lines is multiple, the number of stacks in the temperature measuring line is multiple, and the multiple temperature measuring lines are arranged at intervals, and all the thermoelectric nodes on each temperature measuring line are arranged at intervals along the length direction of the temperature measuring line.

[0029] The temperature measurement system of the second aspect of the present application can meet the temperature measurement requirements of at least one application scenario including scattered point temperature measurement, linear multi-point temperature measurement, temperature field characterization, etc.

[0030] In some embodiments, when there are multiple stacks, each temperature measuring line has an opening facing away from the thermoelectric node, and each stack is flush at one end of the opening; the lengths of the multiple stacks decrease in the direction away from the substrate; and / or, when there are multiple temperature measuring lines, the lengths of the multiple stacks are different along the arrangement direction of the multiple temperature measuring lines. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 This is a flow chart of a method for preparing a temperature measurement system according to an embodiment of the present application.

[0032] Figure 2 This is a three-dimensional schematic diagram of the circuit structure of a temperature measurement system applied to scattered-point temperature measurement according to an embodiment of the present application.

[0033] Figure 3 for Figure 2 Schematic diagram of the middle temperature measurement layer.

[0034] Figure 4 Figures (a), (b), (c), (d), and (e) are Figure 2 Schematic diagram of the circuit structure at different perspectives.

[0035] Figure 5 This is a three-dimensional schematic diagram of the circuit structure of a temperature measurement system applied to linear multi-point temperature measurement according to an embodiment of the present application.

[0036] Figure 6 Figures (a), (b), (c), (d), and (e) are Figure 5 Schematic diagram of the circuit structure at different perspectives.

[0037] Figure 7 This is a three-dimensional schematic diagram of the circuit structure of a temperature measurement system for temperature field characterization according to an embodiment of the present application.

[0038] Figure 8 Figures (a), (b), (c), (d), and (e) are Figure 7 Schematic diagram of the circuit structure at different perspectives.

[0039] Figure 9 Figures (a) and (b) are three-dimensional schematic diagrams of the circuit structure of the temperature measurement system of an embodiment of the present application at different viewing angles at the corresponding cold end module.

[0040] Figure 10 Figures (a) and (b) are Figure 9 The front view and top view of the structure in Figure 10 Figures (c), (d), (e), and (f) are Figure 10 Figure (b) is a schematic cross-sectional view along lines EE, FF, GG, and HH.

[0041] Description of main component symbols:

[0042] Circuit structure: 10a, 10b, 10c; temperature measuring line: L; stack: 11; temperature measuring layer: 111; positive electrode layer: 111a, 211a; positive electrode column: 311a; negative electrode layer: 111b, 211b; negative electrode column: 311b; thermoelectric node: N; first parallel part: A1; first connecting part: C1; second parallel part: A2; second connecting part: C2; protective layer: 112; insulating layer: 12, 22; opening: O; first direction: D1; second direction: D2; third direction: D3.

[0043] The following specific implementation methods will further illustrate the present application in conjunction with the above-mentioned drawings. DETAILED DESCRIPTION

[0044] The embodiments of the present application are described in detail below. Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the embodiments of the present application and are not to be construed as limiting the present application.

[0045] In the description of the embodiments of the present application, the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing the implementation methods of the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0046] In the description of the embodiments of this application, the terms "first" and "second" are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of the technical features indicated. Therefore, features specified as "first" or "second" may explicitly or implicitly include one or more of the aforementioned features.

[0047] In the description of the embodiments of the present application, unless otherwise specified, “a plurality of” means two or more than two.

[0048] In the description of the embodiments of the present application, unless otherwise specified, the terms "installed", "connected" and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection or mutual communication; it can be a direct connection or an indirect connection through an intermediate medium; it can be the internal connection of two elements or the interaction relationship between two elements.

[0049] For those skilled in the art, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0050] With the development of industry and various advanced manufacturing technologies, various industries are placing increasingly higher demands on future manufacturing technologies in terms of manufacturing precision and obtaining high spatial resolution sensor signals. Therefore, as a supporting discipline for industrial production, in-depth research on thin-film sensors with high spatial resolution is urgently needed. Among them, thin-film thermocouples offer numerous advantages, such as low mass, fast response, low heat capacity, and no damage to the structure of the measured object. They have become an advanced surface temperature measurement technology and a primary means of contact temperature measurement. Thin-film thermocouples can be considered special artificial thermocouples, an advanced temperature sensor for measuring transient temperature changes in an object. With a thickness of microns, thin-film thermocouples do not interfere with the original temperature distribution of the measured object, making them suitable for a variety of special temperature measurement applications. The operating mechanism of thin-film thermocouples is the same as that of conventional thermocouples: if a certain temperature difference exists between the hot and cold ends of a circuit composed of two different homogeneous conductors, the circuit will generate a corresponding thermoelectric potential.

[0051] The present invention provides a method for preparing a temperature measurement system that can be used to collect temperature points over a large area in a large heating chamber (e.g., a metal or quartz chamber). By mapping the temperature field to assist in temperature control, temperature fluctuations within the device can be monitored in real time, and the output temperature measurement is highly accurate. Depending on different needs, the order of certain steps or substeps in the method for preparing the temperature measurement system may be changed, and certain steps or substeps may be omitted or combined.

[0052] like Figure 1 As shown, the preparation method of the temperature measurement system includes the following steps S1 to S2.

[0053] Step S1: Draw a circuit diagram of the temperature measurement system according to the application scenario of the temperature measurement system.

[0054] Specifically, the temperature measurement system includes a substrate and a circuit structure located on the substrate. The circuit structure includes at least one temperature measuring wire. Each temperature measuring wire includes at least one laminate. Each laminate includes a temperature measuring layer and a protective layer located above the temperature measuring layer. The temperature measuring layer includes a positive electrode layer and a negative electrode layer, which are connected to form a thermoelectric node at the connection. The number and arrangement of temperature measuring wires and the number and arrangement of laminates in the circuit structure vary depending on the application scenario of the temperature measurement system.

[0055] Specifically, the application scenarios of the temperature measurement system can include, but are not limited to, scattered-point temperature measurement, linear multi-point temperature measurement, and temperature field characterization. In this article, the application scenario of the temperature measurement system as "scattered-point temperature measurement" means that the temperature measurement system can be used to detect temperature points at several discrete locations; the application scenario of the temperature measurement system as "linear multi-point temperature measurement" means that the temperature measurement system can be used to measure multiple temperature points continuously along a single direction; and the application scenario of the temperature measurement system as "temperature field characterization" means that the temperature measurement system can be used to characterize the temperature distribution in two-dimensional and / or three-dimensional space.

[0056] In some embodiments, the application scenario of the temperature measurement system is scattered-point temperature measurement. The number of temperature measurement lines in the temperature measurement system is multiple, the number of stacks in each temperature measurement line is one, and the multiple temperature measurement lines are arranged at intervals.

[0057] In some embodiments, the application scenario of the temperature measurement system is linear multi-point temperature measurement, then the number of temperature measuring lines in the circuit structure is one, the number of stacks in the temperature measuring line is multiple, and all thermoelectric nodes on the temperature measuring line are spaced apart along the length direction of the temperature measuring line.

[0058] In some embodiments, the application scenario of the temperature measurement system is temperature field characterization, then the number of temperature measuring lines in the circuit structure is multiple, the number of stacks in the temperature measuring line is multiple, and the multiple temperature measuring lines are spaced apart, and all the thermoelectric nodes on each temperature measuring line are spaced apart along the length direction of the temperature measuring line.

[0059] Therefore, the preparation method of the temperature measurement system of the embodiment of the present application designs the number of temperature measuring lines and the number of stacking layers in the circuit structure according to different application scenarios, so that the temperature measurement system can flexibly adapt to various temperature measurement needs such as scattered point temperature measurement, linear multi-point temperature measurement and temperature field characterization.

[0060] It should be noted that, during the process of circuit modeling and drawing the circuit diagram in step S1, attention should be paid to the interference between the layers in the circuit structure and the structural parts on the substrate, or there should be no circuit interference and printing interference between the circuits in the circuit structure.

[0061] Specifically, in step S1, circuit modeling and drawing of a circuit diagram of a circuit structure can be achieved by, but not limited to, the following means: professional electronic design automation software (such as Altium Designer, KiCAD, Eagle, etc.) or general drawing software (such as AutoCAD, SolidWorks, Visio, etc.).

[0062] The following is combined with Figure 2 、 Figure 3 and Figure 4 The circuit structure 10a of a temperature measurement system for scattered-point temperature measurement according to an embodiment of the present application is described.

[0063] like Figure 2 As shown, the circuit structure 10a includes a plurality of temperature measuring lines L. The number of the laminate 11 in each temperature measuring line L is one.

[0064] For the convenience of description below, the width direction of each temperature measuring line L is defined as the first direction D1, the length direction is defined as the second direction D2, and the thickness direction is defined as the third direction D3.

[0065] Figure 2 In the embodiment, a plurality of temperature measuring lines L are arranged at intervals along the first direction D1. The lengths of the temperature measuring lines L are different.

[0066] In some embodiments, the substrate (not shown) is made of a conductive material (such as stainless steel), and each temperature measuring line L further includes an insulating layer 12. The laminate 11 is positioned on the insulating layer 12. The circuit structure 10a is formed on the surface of the insulating layer 12 facing away from the substrate. Forming the insulating layer 12 on the conductive substrate thus helps prevent electrical short circuits between the circuit structure and the substrate, thereby improving the accuracy of the temperature measurement system.

[0067] In other embodiments, when the material of the substrate is an insulating material (such as quartz or ceramic), the insulating layer 12 in each temperature measuring line L can be omitted.

[0068] Specifically, the stack 11 includes a temperature measuring layer 111 and a protective layer 112 located on the temperature measuring layer 111. The protective layer 112 is located on the side of the temperature measuring layer 111 facing away from the insulating layer 12, or in other words, on the side of the temperature measuring layer 111 facing away from the substrate. The protective layer 112 is used to protect the temperature measuring layer 111 to prevent damage to the temperature measuring layer 111 and affect the accuracy of temperature measurement.

[0069] In some embodiments, the material of the protective layer 112 may be, but is not limited to, an oxide film and / or a nitride film. Both oxide films and nitride films have good corrosion resistance and chemical stability, can resist erosion from the external environment, and can provide good protection for the temperature measuring layer 111.

[0070] like Figure 3 As shown, the temperature measurement layer 111 includes a positive electrode layer 111a and a negative electrode layer 111b. The positive electrode layer 111a and the negative electrode layer 111b are connected to form a thermoelectric node N at the connection point. The positive electrode layer 111a and the negative electrode layer 111b are arranged roughly symmetrically. Both the positive electrode layer 111a and the negative electrode layer 111b are roughly L-shaped. The temperature measurement layer 111 is roughly U-shaped and has an opening O. The thermoelectric node N is opposite the opening O.

[0071] Specifically, the positive electrode layer 111a includes a first parallel portion A1 and a first connecting portion C1, and the negative electrode layer 111b includes a second parallel portion A2 and a second connecting portion C2. The first parallel portion A1 of the positive electrode layer 111a and the second parallel portion A2 of the negative electrode layer 111b are opposite and spaced apart. The first connecting portion C1 bends and extends from one end of the first parallel portion A1 toward the second parallel portion A2. The second connecting portion C2 bends and extends from one end of the second parallel portion A2 toward the first parallel portion A1 and connects to the first connecting portion C1 between the first and second parallel portions A1 and A2. The end face of the first connecting portion C1 of the positive electrode layer 111a and the end face of the second connecting portion C2 of the negative electrode layer 111b contact and connect, forming a thermoelectric node N in the contact area.

[0072] In other embodiments, the first connection portion C1 and the second connection portion C2 may be partially overlapped to form a thermoelectric node N.

[0073] The positive electrode layer 111a and the negative electrode layer 111b can be connected to instruments (not shown) in the control room via leads (not shown), forming a conductive circuit between the positive electrode layer 111a, the negative electrode layer 111b, the leads, and the instruments. The positive electrode layer 111a and the negative electrode layer 111b are each formed from different conductors. Because the thermoelectric differential electromotive force varies between different conductor materials and changes with temperature, the variation in this electromotive force follows a fixed pattern. Therefore, when the temperature measuring layer 111 is heated, the electrons in the positive electrode layer 111a and the negative electrode layer 111b are affected by the thermal energy to varying degrees, generating a thermoelectric differential electromotive force at the thermoelectric node N. By measuring this thermoelectric differential electromotive force with an instrument, the temperature at the location of the temperature measuring layer 111 can be determined.

[0074] like Figure 2 and Figure 4 As shown in FIG. 1( a ), the opening O at the laminate 11 of each temperature measuring line L faces the same direction.

[0075] like Figure 2 、 Figure 4 Figure (b) in Figure 4 Figure (c) in the Figure 4 As shown in Figure (d), each temperature measuring line L includes an insulating layer 12 and a laminate 11. Along the positive direction of the first direction D1, the lengths of the multiple temperature measuring lines L, or the lengths of the multiple laminates 11, increase. In other embodiments, the lengths of the multiple temperature measuring lines L, or the lengths of the multiple laminates 11, vary along the arrangement direction of the temperature measuring lines L. However, the length trend of the multiple temperature measuring lines L, or the lengths of the multiple laminates 11, along the arrangement direction of the temperature measuring lines L is not limited to increasing. For example, along the arrangement direction of the temperature measuring lines L, the lengths of the multiple temperature measuring lines L, or the lengths of the multiple laminates 11, may first increase and then decrease, or first decrease and then increase, or may change irregularly, as long as it satisfies the temperature measurement requirements of multiple discrete locations.

[0076] like Figure 2 and Figure 4 As shown in FIG. 5( e ), the orientation of the thermoelectric node N at the stack 11 of each temperature measurement line L is the same.

[0077] comprehensive Figure 2 、 Figure 3 and Figure 4 As can be seen, the circuit structure 10a can perform scattered point tests on multiple temperature measurement areas. Since the circuit structure 10a has multiple temperature measurement lines L, the circuit structure 10a is particularly suitable for temperature detection in large spaces.

[0078] The following is combined with Figure 5 and Figure 6 The circuit structure 10b of a temperature measurement system for linear multi-point temperature measurement according to an embodiment of the present application is described.

[0079] like Figure 5 As shown, circuit structure 10b has only one temperature measuring line L. Unlike circuit structure 10a, circuit structure 10b includes multiple stacks 11 in temperature measuring line L. Multiple stacks 11 are stacked sequentially along a third direction D3. The thermoelectric nodes N in each stack 11 are exposed at the corresponding protective layer 112, and all thermoelectric nodes N are spaced apart along the length of temperature measuring line L.

[0080] like Figure 5 and Figure 6 As shown in FIG. 5( a ), along the second direction D2 , the thermoelectric nodes N of the plurality of stacks 11 are arranged at intervals.

[0081] like Figure 5 and Figure 6 As shown in FIG. 5( b ), the end surfaces of each laminate 11 are flush at the opening O. Along the positive direction of the third direction D3 (or in other words, along the direction away from the substrate), the lengths of the plurality of laminates 11 decrease in sequence.

[0082] Thus, the decreasing length design of the multiple stacks 11 ensures that the multiple thermoelectric nodes N do not interfere with each other and are evenly distributed, thereby measuring the temperatures of multiple different temperature zones, improving the accuracy and reliability of temperature measurement. Furthermore, the optimized arrangement of the stacks 11 improves the space utilization of the circuit structure, making the temperature measurement system more compact and lightweight.

[0083] like Figure 5 and Figure 6 As shown in Figure (c) of FIG. 1 , the temperature measuring line L further includes an insulating layer 12. Similar to circuit structure 10a, circuit structure 10b can be used when the substrate is made of a conductive material. Insulating layer 12 serves to insulate and separate circuit structure 10b from the substrate. If the substrate is made of an insulating material, insulating layer 12 can be omitted from circuit structure 10b.

[0084] like Figure 5 and Figure 6 As shown in FIG. 5( d ), the thermoelectric nodes N in each stack 11 are oriented in the same direction.

[0085] like Figure 5 and Figure 6 As shown in FIG. 5( e ), the openings O in each stack 11 are oriented in the same direction. Furthermore, along the third direction D3 , the openings O in the stacks 11 are substantially aligned.

[0086] Combine Figure 5 and Figure 6 It can be seen that the number of the temperature measuring line L in the circuit structure 10b is one, and therefore, the circuit structure 10b is particularly suitable for temperature detection in a small space.

[0087] The following is combined with Figure 7 and Figure 8The circuit structure 10c of a temperature measurement system for temperature field characterization according to an embodiment of the present application is described.

[0088] like Figure 7 As shown, the structure of the temperature measuring lines L in the circuit structure 10c is the same as that of the temperature measuring lines L in the circuit structure 10b. The difference from the circuit structure 10b is that the number of temperature measuring lines L in the circuit structure 10c is multiple.

[0089] like Figure 7 and Figure 8 As shown in FIG. 5( a ), a plurality of temperature measuring lines L are arranged at intervals along the first direction D1 . The openings O of the plurality of laminates 11 in each temperature measuring line L face the same direction.

[0090] like Figure 7 、 Figure 8 Figure (b) and Figure 8 As shown in FIG. 5( d ), one end of each laminate 11 is flush at the opening O. Along the positive direction of the third direction D3 (or in other words, in the direction away from the substrate), the length of each laminate 11 decreases successively.

[0091] Thus, the decreasing length design of the multiple stacks 11 ensures that the multiple thermoelectric nodes N do not interfere with each other and are evenly distributed, thereby measuring the temperatures of multiple different temperature zones, improving the accuracy and reliability of temperature measurement. Furthermore, the optimized arrangement of the stacks 11 improves the space utilization of the circuit structure, making the temperature measurement system more compact and lightweight.

[0092] like Figure 7 and Figure 8 As shown in Figure (c), each temperature measuring line L also includes an insulating layer 12, and the dimensions of the insulating layer 12 of each temperature measuring line L are substantially the same. Similar to circuit structure 10a, circuit structure 10c can be used when the substrate is made of a conductive material. Insulating layer 12 is used to insulate and separate circuit structure 10c from the substrate. If the substrate is made of an insulating material, insulating layer 12 can be omitted from circuit structure 10c.

[0093] like Figure 7 and Figure 8 As shown in Figure (e), the thermoelectric nodes N in each stack 11 are oriented in the same direction. Furthermore, along the second direction D2, the multiple thermoelectric nodes N in each temperature measurement line L are spaced apart. Thus, each temperature measurement line L can measure the temperature of multiple regions along the second direction D2, and multiple temperature measurement lines L can measure the temperature of multiple regions along the first direction D1. Consequently, the circuit structure 10c can measure the temperature field in the two-dimensional plane defined by the first and second directions D1 and D2.

[0094] Combine Figure 7 and Figure 8It can be seen that the number of temperature measuring lines L in the circuit structure 10c is multiple, and therefore, the circuit structure 10c is particularly suitable for temperature detection in a large space.

[0095] Step S2: forming a circuit structure on a substrate according to a circuit diagram of the temperature measurement system.

[0096] In some embodiments, when the substrate is a special-shaped part, the circuit structure is formed by coating. In some embodiments, when the substrate is a regular part, the circuit structure is formed by screen printing. Thus, the preparation method of the temperature measurement system of the embodiment of the present application can select an appropriate process based on the shape of the substrate, ensuring the uniformity and adhesion of the circuit structure, simplifying the production process, reducing manufacturing costs, and enhancing the reliability of the circuit structure.

[0097] In some embodiments, the material of the substrate is a conductive material. In step S2 , an insulating layer 12 needs to be formed on the substrate first, and then a temperature measuring layer 111 is formed on the surface of the insulating layer 12 facing away from the substrate.

[0098] In some embodiments, the material of the substrate is insulating (or non-metallic substrate), and then there is no need to form the insulating layer 12 on the substrate in step S2 , and the temperature measuring layer 111 can be directly formed on the substrate.

[0099] In some embodiments, forming the circuit structure by screen printing further includes: selecting the circuit type of the temperature measuring line L according to the operating temperature range of the temperature measuring system, and then determining, configuring and producing the slurry material of the positive electrode layer 111a and the slurry material of the negative electrode layer 111b.

[0100] Specifically, the operating temperature range of the temperature measurement system, the slurry material of the positive electrode layer 111 a , and the slurry material of the negative electrode layer 111 b corresponding to different line types of the temperature measurement line L are as follows.

[0101] Circuit type K: operating temperature range is between -270 ~ 1370 ° C. The slurry material of the positive electrode layer 111a includes nickel-chromium alloy powder, glass powder, dispersant, antioxidant, and diluent. The slurry material of the negative electrode layer 111b includes nickel-aluminum alloy powder, glass powder, dispersant, antioxidant, and diluent.

[0102] Circuit type N: operating temperature range is between -270 ~ 1300 ° C. The slurry material of the positive electrode layer 111a includes nickel-chromium-silicon alloy powder, glass powder, dispersant, antioxidant, and diluent. The slurry material of the negative electrode layer 111b includes nickel-silicon-magnesium alloy powder, glass powder, dispersant, antioxidant, and diluent.

[0103] Circuit type T: operating temperature range is between -270 ~ 400 ° C. The slurry material of the positive electrode layer 111a includes copper powder, glass powder, dispersant, antioxidant, and diluent. The slurry material of the negative electrode layer 111b includes copper-nickel alloy powder, glass powder, dispersant, antioxidant, and diluent.

[0104] Circuit type J: operating temperature range is between -210 ~ 1200 ° C. The slurry material of the positive electrode layer 111a includes iron powder, glass powder, dispersant, antioxidant, and diluent. The slurry material of the negative electrode layer 111b includes copper-nickel alloy powder, glass powder, dispersant, antioxidant, and diluent.

[0105] Circuit type E: operating temperature range is between -270 ~ 1000 ° C. The slurry material of the positive electrode layer 111a includes nickel-chromium alloy powder, glass powder, dispersant, antioxidant, and diluent. The slurry material of the negative electrode layer 111b includes copper-nickel alloy powder, glass powder, dispersant, antioxidant, and diluent.

[0106] Circuit type R: The operating temperature range is between -50 and 1500°C. The slurry material of the positive electrode layer 111a includes platinum-rhodium alloy powder, glass powder, dispersant, antioxidant, and diluent. The slurry material of the negative electrode layer 111b includes platinum powder, glass powder, dispersant, antioxidant, and diluent.

[0107] Circuit type S: The operating temperature range is between -50 and 1500°C. The slurry material of the positive electrode layer 111a includes platinum-rhodium alloy powder, glass powder, dispersant and diluent. The slurry material of the negative electrode layer 111b includes platinum powder, glass powder, dispersant and diluent.

[0108] Circuit type B: The operating temperature range is between 0 and 1500°C. The slurry material of the positive electrode layer 111a includes platinum-rhodium alloy powder, glass powder, dispersant, and diluent. The slurry material of the negative electrode layer 111b includes platinum powder, glass powder, dispersant, and diluent.

[0109] It should be noted that when selecting the slurry for the positive electrode layer 111a and the slurry for the negative electrode layer 111b, the following performance indicators of the slurry can be considered: main material ratio, viscosity, fineness, printing screen, drying temperature, sintering temperature, fired film thickness, coating rate, square resistance, solderability, solder resistance, adhesion, corresponding diluent, etc.

[0110] In addition, the configuration and production of the slurry material of the positive electrode layer 111a and the slurry material of the negative electrode layer 111b may include the following steps:

[0111] (1) Preparation and production of solid main materials: Weigh the solid main materials in proportion, mix, ball mill, and ultrasonically screen them for later use (herein referred to as material A);

[0112] (2) Preparation and production of dispersant: weigh the raw materials according to the dispersant ratio, mix, grind, heat, homogenize, add the appropriate proportion of diluent and set aside (this is called material B);

[0113] (3) Preparation and production of slurry: Material A and material B are prepared in proportion, mixed, heated and homogenized, and then diluent is added to adjust the construction viscosity according to different working conditions.

[0114] Specifically, based on actual working conditions, the line type and slurry material of the line structure are shown in Table 1 and Table 2.

[0115] In Table 1, single-layer multi-line means that the number of laminated layers consisting of the temperature measuring layer and the protective layer is one, and the number of temperature measuring lines is greater than one; multi-layer single-line means that the number of laminated layers consisting of the temperature measuring layer and the protective layer is greater than one, and the number of temperature measuring lines is one; multi-layer multi-line means that the number of laminated layers consisting of the temperature measuring layer and the protective layer is greater than one, and the number of temperature measuring lines is greater than one.

[0116] In the present embodiment, when screen printing is used to form the circuit structure, the circuit type of the temperature measurement line L is selected based on the operating temperature range, and the slurry material of the positive and negative electrode layers 111b is determined. Furthermore, multiple circuit types (K, N, T, J, E, R, S, and B) are provided, each corresponding to a specific operating temperature range and slurry material formulation. Thus, by providing multiple circuit types, the temperature measurement system can cover a wider temperature range and meet the needs of different application environments.

[0117] Table 1

[0118]

[0119] Table 2

[0120]

[0121] In addition, by selecting the appropriate slurry material according to different temperature ranges, the performance and stability of the temperature measuring line L at specific temperatures can be improved. Furthermore, the material and structure of the temperature measuring line L can be customized according to specific application requirements, improving the flexibility and market competitiveness of the temperature measurement system.

[0122] In some embodiments, one or more of the positive electrode layer 111a, negative electrode layer 111b, insulating layer 12, and protective layer 112 may be thick films (e.g., thicker than 2.5 microns), formed using thick film printing technology. When either the positive electrode layer 111a or the negative electrode layer 111b is a thick film, the thermal differential electromotive force at the junction of the positive and negative electrode layers 111a and 111b can be adjusted by adjusting the composition of the slurry in the positive and negative electrode layers 111a and 111b. Furthermore, thick film printing technology can form thick films on large-diameter cylindrical components.

[0123] In some embodiments, forming the circuit structure by screen printing further includes the following steps S10 to S40.

[0124] Step S10: printing a temperature measuring layer on the substrate.

[0125] Specifically, step S10 includes: printing a paste material of a positive electrode layer on a substrate to obtain a positive electrode layer; printing a paste material of a negative electrode layer on a substrate to obtain a negative electrode layer; connecting the positive electrode layer and the negative electrode layer to form a thermoelectric node at the connection.

[0126] In some embodiments, there are multiple temperature measuring lines L in the circuit structure (for example, circuit structure 10a and circuit structure 10c). In step S10, the positive electrode layer 111a of multiple temperature measuring lines L is obtained by one printing, and the negative electrode layer 111b of multiple temperature measuring lines L is obtained by one printing.

[0127] Thus, by printing the positive electrode layer 111a or the negative electrode layer 111b of multiple temperature measuring lines L at one time, production speed is significantly increased and manufacturing costs are reduced. Moreover, the unified printing and heat treatment steps ensure process consistency of each temperature measuring line L, improving product quality.

[0128] Step S20: performing heat treatment on the temperature measuring layer.

[0129] In some embodiments, the heat treatment in step S20 includes drying and firing. In general continuous production, drying and firing are performed in a continuous kiln at one time.

[0130] Step S30: printing a protective layer on the side of the temperature measuring layer facing away from the substrate.

[0131] In some embodiments, there are multiple temperature measuring lines L in the circuit structure (eg, the circuit structure 10 a and the circuit structure 10 c ). In step S30 , the protective layer 112 of the multiple temperature measuring lines L is obtained by printing at one time.

[0132] Thus, by printing the protective layer 112 of multiple temperature measuring lines L at one time, production speed is significantly increased and manufacturing costs are reduced. Moreover, the unified printing and heat treatment steps ensure process consistency of each temperature measuring line L, thereby improving product quality.

[0133] Step S40: performing heat treatment on the protective layer.

[0134] In some embodiments, the circuit structure includes multiple layers 11 of temperature measuring lines L (e.g., circuit structure 10b and circuit structure 10c). Screen printing is used to form the circuit structure, and steps S10 to S40 are performed repeatedly, with each cycle of steps S10 to S40 forming one layer 11. Thus, multiple printing and heat treatment cycles help maintain process consistency and simplify the production process.

[0135] In some embodiments, the heat treatment in step S40 includes drying and firing. In general continuous production, drying and firing are performed in a continuous kiln at one time.

[0136] Specifically, according to the circuit type, specific application and circuit diagram, the printing method is shown in Table 3.

[0137] Table 3

[0138]

[0139] It should be noted that among the formation methods listed in Table 3 above, the coating method for forming the circuit structure does not require the preparation of a slurry. Coating methods can include, but are not limited to, physical vapor deposition and chemical vapor deposition. The remaining printing methods utilize screens of varying properties and can be manually, semi-automatically, or automatically printed to produce the desired circuitry.

[0140] It should also be noted that the various formation methods listed in Table 3 above are not mutually exclusive. For example, thick film printing can include flat screen printing or curved screen printing. Alternatively, coating can form thin films (e.g., less than 2.5 microns thick) using flat screen printing or curved screen printing.

[0141] In some embodiments, the method for preparing the temperature measurement system further includes: performing a secondary dimension test and / or an electrical performance test on the circuit structure to obtain a hot end module that meets preset standards.

[0142] Specifically, during the secondary dimension testing, the line width dimensional error (mm) of the temperature measuring line L is required to be ±0.01, the line length dimensional error (mm) to be ±0.1, and the line thickness dimensional error (mm) to be ±0.005. During the electrical performance testing, the line square resistance error (Ω) of a single temperature measuring line L is required to be ±0.15, and the inter-line square resistance (MΩ) to be ≥2. Therefore, secondary dimension testing ensures that the geometric dimensions of the line structure meet design requirements, avoiding temperature measurement errors caused by dimensional deviations. The electrical performance testing, on the other hand, ensures the stability and accuracy of the line structure in actual operation, reducing measurement deviations caused by poor electrical performance. Therefore, these testing steps collectively improve the measurement accuracy and data reliability of the entire temperature measurement system.

[0143] In some embodiments, the preparation method of the temperature measurement system further includes: assembling the compensation wire, the cold end module, and the hot end module, and performing a temperature point calibration test.

[0144] Specifically, using a standard thermocouple as the temperature measurement device, the thermal differential electromotive force (DEMF) of each circuit at each temperature point is recorded. The temperature measurement characteristic curve is then plotted and the correlation coefficient (R) is calculated, with an R ≥ 0.95 requirement. This benchmarking test at each temperature point calibrates the temperature measurement system's accuracy, ensuring measurement accuracy in practical applications.

[0145] In some embodiments, the overall temperature measurement system adopts flange-type splicing, and the cold end derivation method is modular plug-in type.

[0146] Specifically, Figures 2 to 8 The circuit structure of the temperature measurement system in different application scenarios is shown in the schematic diagram of the corresponding hot end module. Figure 9 and Figure 10 A schematic diagram illustrating the circuit structure of the temperature measurement system according to an embodiment of the present application corresponding to the cold end module. Figures 2 to 8 The hot end module portion of the circuit structure shown may be formed on the inner wall of the reaction chamber of the furnace body. Figure 9 and Figure 10 The cold end module of the circuit structure shown can be formed on the flange at the furnace mouth or on the furnace door by printing. The cold end module and the hot end module can be connected by a compensation wire, but is not limited thereto.

[0147] like Figure 9 As shown in (a) and (b) of FIG, the cold end module of the circuit structure includes a positive electrode layer 211 a, a negative electrode layer 211 b, an insulating layer 22, a positive electrode column 311 a and a negative electrode column 311 b.

[0148] Please refer to Figure 9 and Figure 10 In Figures (a), (b), (c), (d), (e), and (f), multiple positive electrode layers 211a are stacked along the third direction D3. An insulating layer 22 is located between two adjacent positive electrode layers 211a along the third direction D3, isolating and electrically insulating the two adjacent positive electrode layers 211a along the third direction D3 from each other. The number of positive electrode posts 311a is the same as the number of positive electrode layers 211a. The multiple positive electrode posts 311a are spaced apart along the first direction D1, and each positive electrode layer 211a is electrically connected to a corresponding positive electrode post 311a. The number of negative electrode layers 211b is the same as the number of positive electrode layers 211a. Multiple negative electrode layers 211b are stacked along the third direction D3. An insulating layer 22 is located between two adjacent negative electrode layers 211b along the third direction D3, and all negative electrode layers 211b are connected to the same negative electrode post 311b. This simplifies the circuit structure of the cold end module.

[0149] In other embodiments, the structures of the positive electrode layer 211a and the negative electrode layer 211b at the cold end module are not limited to Figure 9 and Figure 10For example, in other embodiments, a negative electrode column 311b may be provided for each negative electrode layer 211b, and each negative electrode layer 211b is connected to a corresponding negative electrode column 311b.

[0150] In some embodiments, Figure 9 and Figure 10 The cold end module of the circuit structure shown is formed on the furnace door. When the furnace door is closed, the positive electrode column 311a at the cold end module of the circuit structure contacts and is electrically connected to the positive electrode layer 111a at the hot end module of the circuit structure on the inner wall of the reaction chamber of the furnace body, and the negative electrode column 311b at the cold end module of the circuit structure contacts and is electrically connected to the negative electrode layer 111b at the hot end module of the circuit structure in the reaction chamber, thereby forming a conductive loop.

[0151] The present application also provides a temperature measurement system (not shown). The temperature measurement system includes a substrate and a circuit structure located on the substrate. The substrate can be, but is not limited to, a reaction chamber of a heating furnace. The circuit structure can be Figures 2 to 10 The circuit structure described in any one of the embodiments and its variations.

[0152] In summary, the temperature measurement system and preparation method of the embodiment of the present application are conducive to solving the problem of large-area temperature point collection in a large heating chamber (metal or / quartz). By drawing the temperature field to assist in temperature control, the temperature fluctuation inside the equipment can be monitored in real time, and the output temperature measurement temperature is highly accurate. Printing routes for different processes can be flexibly designed according to the application scenario of the equipment.

[0153] The above embodiments are only used to illustrate the technical solutions of the present application and are not intended to limit the present application. Although the present application has been described in detail with reference to the above preferred embodiments, those skilled in the art should understand that modifications or equivalent replacements of the technical solutions of the present application should not depart from the spirit and scope of the technical solutions of the present application.

Claims

1. A method for preparing a temperature measurement system, characterized in that: The temperature measurement system includes a substrate and a circuit structure located on the substrate, the circuit structure includes at least one temperature measurement line, each temperature measurement line includes at least one stack, each stack includes a temperature measurement layer and a protective layer located on the temperature measurement layer, the temperature measurement layer includes a positive electrode layer and a negative electrode layer, the positive electrode layer and the negative electrode layer are connected to form a thermoelectric node at the connection; the preparation method of the temperature measurement system includes: According to the application scenario of the temperature measurement system, a circuit diagram of the circuit structure is drawn: when the application scenario is scattered-point temperature measurement, the number of the temperature measuring lines in the circuit structure is multiple, the number of the stacking layers in each temperature measuring line is one, and the multiple temperature measuring lines are spaced apart along the width direction of the temperature measuring line; when the application scenario is linear multi-point temperature measurement, the number of the temperature measuring line in the circuit structure is one, the number of the stacking layers in the temperature measuring line is multiple, and all the thermoelectric nodes on the temperature measuring line are spaced apart along the length direction of the temperature measuring line; when the application scenario is temperature field characterization, the number of the temperature measuring lines in the circuit structure is multiple, the number of the stacking layers in the temperature measuring line is multiple, and the multiple temperature measuring lines are spaced apart along the width direction of the temperature measuring line, and all the thermoelectric nodes on each temperature measuring line are spaced apart along the length direction of the temperature measuring line; and forming the circuit structure on the substrate according to the circuit diagram of the temperature measurement system; Each of the temperature measurement layers has an opening facing away from the thermoelectric node, and one end of each of the stacked layers is flush with the opening; When there are multiple stacks in the temperature measuring line, the lengths of the multiple stacks in the temperature measuring line decrease along the direction away from the substrate; and / or when there are multiple temperature measuring lines, the lengths of the multiple stacks are different along the arrangement direction of the multiple temperature measuring lines.

2. The method for preparing a temperature measurement system according to claim 1, wherein: When the substrate is a special-shaped part, the circuit structure is formed by coating; when the substrate is a regular part, the circuit structure is formed by screen printing.

3. The method for preparing a temperature measurement system according to claim 2, wherein: Forming the circuit structure by screen printing also includes: According to the operating temperature range of the temperature measuring system, the line type of the temperature measuring line is selected, and then the slurry material of the positive electrode layer and the slurry material of the negative electrode layer are determined; wherein, the operating temperature range of the temperature measuring system, the slurry material of the positive electrode layer and the slurry material of the negative electrode layer corresponding to different line types of the temperature measuring line are as follows: Circuit Type K: The operating temperature range is between -270 and 1370°C. The slurry materials for the positive electrode layer include nickel-chromium alloy powder, glass powder, dispersant, antioxidant, and diluent. The slurry materials for the negative electrode layer include nickel-aluminum alloy powder, glass powder, dispersant, antioxidant, and diluent. Circuit type N: The operating temperature range is between -270 and 1300°C. The slurry materials for the positive electrode layer include nickel-chromium-silicon alloy powder, glass powder, dispersant, antioxidant, and diluent. The slurry materials for the negative electrode layer include nickel-silicon-magnesium alloy powder, glass powder, dispersant, antioxidant, and diluent. Circuit Type T: The operating temperature range is between -270 and 400°C. The slurry materials for the positive electrode layer include copper powder, glass powder, dispersant, antioxidant, and diluent. The slurry materials for the negative electrode layer include copper-nickel alloy powder, glass powder, dispersant, antioxidant, and diluent. Circuit Type J: The operating temperature range is between -210 and 1200°C. The slurry materials for the positive electrode layer include iron powder, glass powder, dispersant, antioxidant, and diluent. The slurry materials for the negative electrode layer include copper-nickel alloy powder, glass powder, dispersant, antioxidant, and diluent. Circuit Type E: Operating temperature range is between -270~1000℃. The slurry materials of the positive electrode layer include nickel-chromium alloy powder, glass powder, dispersant, antioxidant, and diluent. The slurry materials of the negative electrode layer include copper-nickel alloy powder, glass powder, dispersant, antioxidant, and diluent. Circuit type R: The operating temperature range is between -50 and 1500°C. The slurry materials of the positive electrode layer include platinum-rhodium alloy powder, glass powder, dispersant, antioxidant, and diluent. The slurry materials of the negative electrode layer include platinum powder, glass powder, dispersant, antioxidant, and diluent. Circuit type S: The operating temperature range is between -50 and 1500°C. The slurry materials for the positive electrode layer include platinum-rhodium alloy powder, glass powder, dispersant, and diluent. The slurry materials for the negative electrode layer include platinum powder, glass powder, dispersant, and diluent. Circuit type B: The operating temperature range is between 0~1500℃. The slurry materials of the positive electrode layer include platinum-rhodium alloy powder, glass powder, dispersant, and diluent. The slurry materials of the negative electrode layer include platinum powder, glass powder, dispersant, and diluent.

4. The method for preparing a temperature measurement system according to claim 3, wherein: Forming the circuit structure by screen printing also includes: Step S10: printing a temperature measurement layer on the substrate, including: printing the slurry material of the positive electrode layer on the substrate to obtain a positive electrode layer; printing the slurry material of the negative electrode layer on the substrate to obtain a negative electrode layer, wherein the positive electrode layer and the negative electrode layer are connected to form a thermoelectric node at the connection; Step S20: performing heat treatment on the temperature measuring layer; Step S30: printing a protective layer on a side of the temperature measuring layer away from the substrate; and Step S40: performing heat treatment on the protective layer; When there are multiple temperature measuring lines, in step S10, the positive electrode layer of the multiple temperature measuring lines is obtained by printing once, and the negative electrode layer of the multiple temperature measuring lines is obtained by printing once; in step S30, the protective layer of the multiple temperature measuring lines is obtained by printing once; When there are multiple stacks, the circuit structure is formed by screen printing, and the steps S10 to S40 are performed in a loop, with each loop of the steps S10 to S40 forming one stack.

5. The method for preparing a temperature measurement system according to claim 4, characterized in that: When the substrate is made of a conductive material, before forming the temperature measurement layer, the method for preparing the temperature measurement system further includes: An insulating layer is formed on the substrate; and the temperature measuring layer is formed on a surface of the insulating layer facing away from the substrate.

6. The method for preparing a temperature measurement system according to any one of claims 1 to 5, characterized in that: The method for preparing the temperature measurement system further includes: performing a secondary dimension test and / or an electrical performance test on the circuit structure to obtain a hot end module that meets preset standards.

7. The method for preparing a temperature measurement system according to claim 6, characterized in that: The preparation method of the temperature measurement system further includes: assembling the compensation wire, the cold end module, and the hot end module, and performing a temperature point calibration test.

8. A temperature measurement system, characterized in that: include: matrix; as well as a circuit structure located on the substrate, the circuit structure comprising at least one temperature measuring line, each temperature measuring line comprising at least one laminate, each laminate comprising a temperature measuring layer and a protective layer located on the temperature measuring layer, the temperature measuring layer comprising a positive electrode layer and a negative electrode layer, the positive electrode layer and the negative electrode layer being connected to form a thermoelectric node at the connection; There are multiple temperature measuring lines, each of which has one stack, and the multiple temperature measuring lines are spaced apart in a width direction of the temperature measuring line. Alternatively, the number of the temperature measuring line is one, the number of the stacks in the temperature measuring line is multiple, and the thermoelectric nodes of all the stacks are spaced apart along the length direction of the temperature measuring line; Alternatively, there are a plurality of temperature measuring lines, a plurality of stacked layers in the temperature measuring lines, and the plurality of temperature measuring lines are spaced apart along the width direction of the temperature measuring lines, and all the thermoelectric nodes on each temperature measuring line are spaced apart along the length direction of the temperature measuring line; Each of the temperature measuring wires has an opening facing away from the thermoelectric node, and one end of each of the stacked layers is flush with the opening; When there are multiple stacks in the temperature measuring line, the lengths of the multiple stacks in the temperature measuring line decrease along the direction away from the substrate; and / or when there are multiple temperature measuring lines, the lengths of the multiple stacks are different along the arrangement direction of the multiple temperature measuring lines.

Images