Manufacturing method of display panel, display panel and electronic equipment
In the manufacturing process of the OLED display panel, patterning the conductive material layer is etched using a preset etching liquid with a less impact on the isolation structure, which solves the problem of poor overlap between the sub-pixel electrode and the isolation structure, and improves the consistency of display yield and electrical connection effect.
Patent Information
- Application Number
- CN202410742017.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-06-07
- Publication Date
- 2025-04-29
- Estimated Expiration
- 2044-06-07
AI Technical Summary
The process performance of existing OLED display products needs to be improved, especially in the problem of poor overlap between sub-pixel electrodes and isolation structures and inconsistent overlap resistance, which affects the display effect.
During the manufacturing process of the display panel, the conductive material layer is patterned by using a preset etching liquid with a less impact on the isolation structure, so as to reduce the influence of the earlier formed sub-pixels on the later-formed sub-pixel isolation structure, thereby ensuring the effectiveness and consistency of subsequent electrode evaporation overlaps for each sub-pixel.
Good overlap between each sub-pixel electrode and the isolation structure is achieved, the display yield is improved, and the consistency and effectiveness of the electrical connection effect of light emitting devices of different colors is ensured.
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Figure CN119907425A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of display technology, and in particular, to a method for manufacturing a display panel, a display panel, and an electronic device. Background Art
[0002] Organic Light Emitting Diode (OLED) and flat panel display devices based on technologies such as Light Emitting Diode (LED) have been widely used in various consumer electronic products such as mobile phones, televisions, laptops, desktop computers, etc. due to their advantages such as high image quality, power saving, thin body and wide application range, becoming the mainstream in display devices.
[0003] However, the process performance of current OLED display products needs to be improved. Summary of the invention
[0004] In order to overcome the above-mentioned deficiencies in the prior art, the object of the present application is to provide a method for manufacturing a display panel, comprising:
[0005] providing a substrate;
[0006] An isolation structure is formed on one side of the substrate, wherein the isolation structure includes a plurality of isolation openings arranged at intervals; the plurality of isolation openings include a first isolation opening and a second isolation opening;
[0007] A first light emitting material layer, a first conductive material layer and a first packaging material layer are sequentially formed on a side of the substrate provided with the isolation structure, wherein at least parts of the first light emitting material layer, the first conductive material layer and the first packaging material layer are located in the first isolation opening and the second isolation opening;
[0008] removing the first packaging material layer in the second isolation opening;
[0009] Etching the first conductive material layer using a preset etching solution to remove the first conductive material layer in the second isolation opening;
[0010] removing the first light emitting material layer in the second isolation opening;
[0011] The corrosion resistance of the isolation structure to the preset etching solution is greater than the corrosion resistance of the first conductive material layer to the preset etching solution.
[0012] In some possible implementations, components of the preset etching solution include C6H8O7, HNO3 and CH3COOH.
[0013] In some possible implementations, the mass fraction of C6H8O7 in the preset etching solution is greater than or equal to 15% and less than or equal to 30%, the mass fraction of HNO3 is greater than or equal to 5% and less than or equal to 10%, and the mass fraction of CH3COOH is greater than or equal to 5% and less than or equal to 10%.
[0014] In some possible implementations, the step of forming an isolation structure on one side of the substrate includes:
[0015] forming an isolation layer on one side of the substrate;
[0016] The isolation layer is patterned and etched to form an isolation structure, wherein the isolation structure includes a support portion and a shielding portion stacked in sequence in a direction away from the substrate, and the orthographic projection of the support portion on the substrate is located within the orthographic projection of the shielding portion on the substrate; the first undercut lengths of the isolation structure corresponding to the first isolation opening and the second isolation opening are equal or the absolute value of the difference is less than or equal to 0.1 micrometers, and the first undercut length is the distance between the orthographic projection of one end of the support portion close to the isolation opening on the substrate and the orthographic projection of one end of the shielding portion close to the isolation opening on the substrate;
[0017] The corrosion resistance of the support portion to the preset etching solution is greater than the corrosion resistance of the first conductive material layer to the preset etching solution.
[0018] In some possible implementations, the isolation structure further includes a receiving portion located on a side of the support portion close to the substrate, an orthographic projection of the support portion on the substrate is located within an orthographic projection of the receiving portion on the substrate; an area of the orthographic projection of the support portion on the substrate is smaller than an area of the orthographic projection of the receiving portion on the substrate;
[0019] The corrosion resistance of the receiving portion to the preset etching solution is greater than the corrosion resistance of the first conductive material layer to the preset etching solution;
[0020] The second undercut lengths of the isolation structures corresponding to the first isolation opening and the second isolation opening are equal or the absolute value of the difference is less than or equal to 0.1 micrometers, and the second undercut length is the distance between the orthographic projection of one end of the receiving portion close to the isolation opening on the substrate and the orthographic projection of one end of the shielding portion close to the isolation opening on the substrate;
[0021] Optionally, the first conductive material layer is in electrical contact with the receiving portion.
[0022] In some possible implementations, after removing the first light emitting material layer in the second isolation opening, the method further includes:
[0023] forming a second light-emitting material layer, a second conductive material layer and a second packaging material layer in the second isolation opening; the light-emitting colors of the first light-emitting material layer and the second light-emitting material layer are different;
[0024] Alternatively, the isolation opening further includes a third isolation opening;
[0025] While removing the first packaging material layer in the second isolation opening, the first packaging material layer in the third isolation opening is removed;
[0026] while removing the first conductive material layer in the second isolation opening, removing the first conductive material layer in the third isolation opening;
[0027] While removing the first light emitting material layer in the second isolation opening, the first light emitting material layer in the third isolation opening is removed;
[0028] After removing the first light emitting material layer in the second isolation opening, the method further includes:
[0029] A second light emitting material layer, a second conductive material layer and a second packaging material layer are sequentially formed on a side of the substrate provided with the isolation structure, wherein at least parts of the second light emitting material layer, the second conductive material layer and the second packaging material layer are located in the first isolation opening, the second isolation opening and the third isolation opening;
[0030] removing the second packaging material layer in the first isolation opening and the third isolation opening;
[0031] The second conductive material layer is etched using a preset etching solution to remove the second conductive material layer in the first isolation opening and the third isolation opening; the corrosion resistance of the isolation structure to the preset etching solution is greater than the corrosion resistance of the second conductive material layer to the preset etching solution;
[0032] removing the second light emitting material layer in the first isolation opening and the third isolation opening;
[0033] A third light-emitting material layer, a third conductive material layer and a third packaging material layer are sequentially formed on a side of the substrate provided with the isolation structure, wherein at least parts of the third light-emitting material layer, the third conductive material layer and the third packaging material layer are located in the first isolation opening, the second isolation opening and the third isolation opening; the first light-emitting material layer, the second light-emitting material layer and the third light-emitting material layer have different light-emitting colors;
[0034] removing the third packaging material layer in the first isolation opening and the second isolation opening;
[0035] The third conductive material layer is etched using a preset etching solution or an etching solution different from the preset etching solution to remove the third conductive material layer in the first isolation opening and the second isolation opening; the corrosion resistance of the isolation structure to the preset etching solution is greater than the corrosion resistance of the third conductive material layer to the preset etching solution;
[0036] The third light emitting material layer in the first isolation opening and the second isolation opening is removed.
[0037] In some possible implementations, the isolation structure does not react with a preset etching solution.
[0038] Another object of the present application is to provide a display panel, comprising:
[0039] substrate;
[0040] An isolation structure located on one side of the substrate, the isolation structure comprising a plurality of isolation openings arranged at intervals; the isolation structure comprising a support portion and a shielding portion stacked in sequence in a direction away from the substrate, the orthographic projection of the support portion on the substrate being within the orthographic projection of the shielding portion on the substrate;
[0041] A plurality of light-emitting devices with different luminous colors, at least part of the light-emitting devices being located in the isolation opening, the first undercut lengths of the isolation structures corresponding to the isolation openings corresponding to at least two light-emitting devices with different luminous colors being equal or the absolute value of the difference being less than or equal to 0.1 micron, and the first undercut length being the distance between the orthographic projection of one end of the supporting portion close to the isolation opening on the substrate and the orthographic projection of one end of the shielding portion close to the isolation opening on the substrate.
[0042] In some possible implementations, the display panel includes at least three light-emitting devices with different luminous colors, and the first bottom cut lengths of the isolation structures corresponding to the isolation openings corresponding to the light-emitting devices with different luminous colors are equal or the absolute value of the difference is less than or equal to 0.1 micrometer.
[0043] Optionally, the plurality of light-emitting devices with different luminous colors include a light-emitting device for emitting red light, a light-emitting device for emitting green light, and a light-emitting device for emitting blue light.
[0044] In some possible implementations, the display panel further includes:
[0045] A pixel defining layer, the pixel defining layer comprising a pixel opening, the pixel opening being correspondingly connected to the isolation opening, and an orthographic projection of the pixel opening on the substrate being located within an orthographic projection of the isolation opening on the substrate;
[0046] Optionally, the pixel defining layer is located between the isolation structure and the substrate, or the pixel defining layer is provided with a clearance opening, and the isolation structure is located in the clearance opening.
[0047] In some possible implementations, the light-emitting device includes a first electrode, a light-emitting unit, and a second electrode which are sequentially stacked in a direction away from the substrate.
[0048] In some possible implementations, the isolation structure is conductive, and the second electrode is electrically connected to the isolation structure;
[0049] Optionally, the second electrode extends from the isolation opening to contact a side wall of the isolation structure facing the isolation opening.
[0050] In some possible implementations, the activity of the material of the supporting portion is greater than the activity of the material of the shielding portion;
[0051] Optionally, the material of the supporting part includes aluminum, and the material of the shielding part includes titanium.
[0052] In some possible implementations, the isolation structure further includes a receiving portion located on a side of the support portion close to the substrate, and an orthographic projection of the support portion on the substrate is located within an orthographic projection of the receiving portion on the substrate;
[0053] The area of the orthographic projection of the supporting portion on the substrate is smaller than the area of the orthographic projection of the receiving portion on the substrate;
[0054] Optionally, the second electrode is in electrical contact with the receiving portion.
[0055] In some possible implementations, the second undercut lengths of the isolation structures corresponding to the isolation openings corresponding to the light-emitting devices of at least two different light-emitting colors are equal or the absolute value of the difference is less than or equal to 0.1 micrometers, and the second undercut length is the distance between the orthographic projection of one end of the receiving portion close to the isolation opening on the substrate and the orthographic projection of one end of the shielding portion close to the isolation opening on the substrate;
[0056] Optionally, the display panel includes at least three light-emitting devices with different luminous colors, and the second undercut lengths of the isolation structures corresponding to the isolation openings corresponding to the light-emitting devices with different luminous colors are equal or the absolute value of the difference is less than or equal to 0.1 micrometer;
[0057] Optionally, the material of the receiving portion includes molybdenum.
[0058] In some possible implementations, the display panel further includes an encapsulation unit located on a side of the light-emitting device away from the substrate, and the encapsulation unit extends from the isolation opening to a side of the isolation structure away from the substrate;
[0059] Optionally, there is a gap between the packaging units corresponding to adjacent isolation openings, and the gap is located on a side of the isolation structure away from the substrate.
[0060] In some possible implementations, the display panel further includes a second encapsulation layer and a third encapsulation layer which are located on a side of the encapsulation unit away from the substrate and are sequentially stacked in a direction away from the substrate;
[0061] Optionally, the materials of the encapsulation unit and the third encapsulation layer include inorganic materials, and the material of the second encapsulation layer includes organic materials.
[0062] In some possible implementations, the isolation structure includes at least two isolation openings with different opening sizes, where the opening size is the size of an orthographic projection of the isolation opening on the substrate.
[0063] In some possible implementations, the isolation openings corresponding to at least two light-emitting devices with different light-emitting colors have different opening sizes.
[0064] The present application also provides an electronic device, which includes a display panel manufactured by the display panel manufacturing method provided before the present application, or includes the display panel provided in the present application.
[0065] Compared with the prior art, this application has the following beneficial effects:
[0066] The manufacturing method, display panel and electronic device of the display panel provided in the present application can reduce the impact of the production process of sub-pixels formed earlier on the isolation structure of sub-pixels formed later by patterning the conductive material layer using a preset etching solution that has less impact on the isolation structure, thereby ensuring the effectiveness of subsequent electrode evaporation overlap of each sub-pixel and ensuring the display yield. BRIEF DESCRIPTION OF THE DRAWINGS
[0067] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.
[0068] Figure 1 is a schematic diagram of a display panel with an isolation structure;
[0069] Figure 2 is a schematic diagram of a manufacturing process of a display panel with an isolation structure;
[0070] Figure 3 The second schematic diagram of the manufacturing process of the display panel with an isolation structure;
[0071] Figure 4 A schematic flow chart of the steps of the method for manufacturing a display panel provided in this embodiment;
[0072] Figure 5 This is a schematic diagram of a manufacturing process of a display panel provided in this embodiment;
[0073] Figure 6 The second schematic diagram of the manufacturing process of the display panel provided in this embodiment;
[0074] Figure 7 The third schematic diagram of the manufacturing process of the display panel provided in this embodiment;
[0075] Figure 8 One of the schematic diagrams of the display panel provided in this embodiment;
[0076] Fig. 9 A second schematic diagram of a display panel provided in this embodiment;
[0077] Fig.10 A schematic diagram of an isolation structure provided in this embodiment;
[0078] Fig.11 A fourth schematic diagram of a display panel provided in this embodiment;
[0079] Fig.12 A fifth schematic diagram of a display panel provided in this embodiment;
[0080] Fig.13 A sixth schematic diagram of a display panel provided in this embodiment;
[0081] Fig.14 This is the seventh schematic diagram of the display panel provided in this embodiment.
[0082] Icon: 110-substrate; 120-first electrode; 130-pixel defining layer; 140-isolation structure; 141-support portion; 142-shielding portion; 143-receiving portion; 150-light-emitting unit; 160-second electrode; 170-packaging unit; 180-second packaging layer; 190-third packaging layer; 910-etching blocking portion; 1510-first light-emitting material layer; 1610-first electrode material layer; 1710-first packaging material layer; P1-first sub-pixel; P2-second sub-pixel; P3-third sub-pixel. DETAILED DESCRIPTION
[0083] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. The components of the embodiments of the present application described and shown in the drawings here can be arranged and designed in various different configurations.
[0084] Therefore, the following detailed description of the embodiments of the present application provided in the accompanying drawings is not intended to limit the scope of the present application for which protection is sought, but merely represents selected embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in the field without creative work are within the scope of protection of the present application.
[0085] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, further definition and explanation thereof is not required in subsequent drawings.
[0086] In the description of the present application, it should be noted that the terms "center", "upper", "lower", "vertical", "horizontal", "inner", "outer", etc. indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, or the positions or positional relationships in which the inventive product is usually placed when in use. They are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific position, be constructed and operated in a specific position, and therefore cannot be understood as a limitation on the present application. In addition, the terms "first", "second", "third", etc. are only used to distinguish the description, and cannot be understood as indicating or implying relative importance.
[0087] It should be noted that, in the absence of conflict, different features in the embodiments of the present application may be combined with each other.
[0088] Please refer to Figure 1 In some display panels using the isolation structure 140, the display panel generally includes a substrate 110, a pixel defining layer 130, an isolation structure 140, and a light-emitting device, wherein a pixel opening of the pixel defining layer 130 is connected to an isolation opening of the isolation structure 140, the light-emitting device is at least partially located in the pixel opening and / or the isolation opening, and the light-emitting device includes a first electrode 120, a light-emitting unit 150, and a second electrode 160. The display panel may further include an encapsulation unit 170, which is located on a side of the light-emitting device away from the substrate.
[0089] The isolation structure can enclose a plurality of isolation openings. The setting of the isolation structure can form a plurality of light-emitting units of various colors and a second electrode corresponding to the light-emitting unit in the light-emitting material layer and the second electrode layer respectively without the need for a fine metal mask, thereby reducing the manufacturing cost of the display panel. The isolation structure can separate the light-emitting material layer and the second electrode in the light-emitting device, so that different light-emitting devices are independent of each other, so as to improve the crosstalk between adjacent light-emitting devices and enhance the display effect. Adjacent light-emitting devices can be independently packaged to improve the packaging yield. At the same time, due to the existence of the isolation structure, the light-emitting material layer and the second electrode layer in the light-emitting device of each color in the display panel can be first prepared on the entire surface and then patterned, thereby eliminating the fine metal mask to save the manufacturing cost of the display panel.
[0090] Among them, patent applications PCT / CN2023 / 134518, 202310759370.2, 202310740412.8, 202310707209.0, 202311346196.5, and 202311499823.9 record relevant technical solutions of the isolation structure 140 (or partition structure), and their contents are incorporated into this application by reference for reference.
[0091] The inventors have discovered that, during the manufacturing process of the above-mentioned display panel, in the etching operation of the second electrode 160 (for example, the cathode) of the sub-pixel (which may include a light-emitting device) formed earlier, the etching action may affect the isolation structure 140 of the sub-pixel formed later (which may be side-etched, and the side engraving depth increases), thereby causing the sub-pixel formed later to have a problem of poor overlap between the electrode and the isolation structure, and / or, the overlap resistance of each sub-pixel is inconsistent, the side engraving depth of the isolation structure exceeds a certain value, the rear pixel has difficulty in overlapping, and the abnormal cathode overlap leads to poor dark spots, affecting the display effect.
[0092] For details, please refer to Figure 2 In the case where the first sub-pixel P1 is manufactured before the second sub-pixel P2 and the third sub-pixel P3, the first electrode 120, the pixel defining layer 130 and the isolation structure 140 are usually manufactured on the substrate 110, and then a first light-emitting material layer 1510, a first conductive material layer 1610 and a first encapsulation material layer 1710 are provided to cover the entire layer by evaporation, and then an etching protection portion 910 is provided at the isolation opening corresponding to the first sub-pixel P1.
[0093] Next, please refer to Figure 3 The first light-emitting material layer 1510, the first conductive material layer 1610 and the first packaging material layer 1710 not covered by the etching protection part 910 are removed respectively by etching gas, etching solution and stripping solution to form the light-emitting unit 150, the second electrode 160 and the packaging unit 170 corresponding to the first sub-pixel P1.
[0094] In this process, the etching solution used to remove the first conductive material layer 1610 may also cause certain damage to the isolation structure 140 not covered by the etching protection portion 910, causing the support portion 141 in the isolation structure 140 that is more susceptible to etching to further shrink inward compared to the shielding portion 142, thereby causing the first undercut length SA2 corresponding to the second sub-pixel P2 to increase compared to the first undercut length SA1 corresponding to the first sub-pixel P1. When the second electrode 160 corresponding to the second sub-pixel P2 is subsequently formed, the second electrode 160 corresponding to the second sub-pixel P2 cannot be effectively overlapped with the isolation structure 140, affecting the lighting yield of the second sub-pixel P2.
[0095] In view of this, the present embodiment provides a solution that can improve the consistency of the first undercut lengths corresponding to the isolation openings. The solution provided by the present embodiment is described in detail below.
[0096] Please refer to Figure 4 , Figure 4 A schematic flow chart of the steps of a method for manufacturing a display panel provided in this embodiment, the method may include the following steps.
[0097] Step S110 , providing a substrate 110 .
[0098] In this embodiment, a buffer layer, an active layer, multiple conductive layers (such as metal layers), multiple insulating layers, and a planarization layer may be provided on one side of the substrate 110. The multiple film layer structures may form multiple thin film transistors (TFTs) at different positions, and the thin film transistors may cooperate with each other to form multiple pixel driving units or driving circuits.
[0099] Step S120: forming an isolation structure 140 on one side of the substrate 110, wherein the isolation structure 140 includes a plurality of isolation openings arranged at intervals, and the plurality of isolation openings include a first isolation opening and a second isolation opening.
[0100] Optionally, in this embodiment, the isolation structure 140 may include a support portion 141 and a shielding portion 142 which are sequentially stacked in a direction away from the substrate 110, and the orthographic projection of the support portion 141 on the substrate 110 is located within the orthographic projection of the shielding portion 142 on the substrate 110. The orthographic projection area of the support portion 141 on the substrate 110 is smaller than the orthographic projection area of the shielding portion 142 on the substrate 110. That is, at the isolation opening, the support portion 141 of the isolation structure 140 is retracted compared to the shielding portion 142 to form an undercut structure, which is equivalent to a T-shaped cross section of the isolation structure 140.
[0101] In this embodiment, the first undercut length corresponding to the isolation opening is the distance between the orthographic projection of one end of the support portion 141 close to the isolation opening on the substrate 110 and the orthographic projection of one end of the shielding portion 142 close to the isolation opening on the substrate 110 .
[0102] In step S130, a first light-emitting material layer 1510, a first conductive material layer 1610 and a first packaging material layer 1710 are sequentially formed on the side of the substrate 110 where the isolation structure 140 is provided, and at least part of the first light-emitting material layer 1510, the first conductive material layer 1610 and the first packaging material layer 1710 are located in the first isolation opening and the second isolation opening.
[0103] In this embodiment, the first light-emitting material layer 1510 and the first conductive material layer 1610 may be provided in a fully covered manner by evaporation, and the first packaging material layer 1710 may be provided in a fully covered manner by chemical vapor deposition. In this case, at least a portion of the first light-emitting material layer 1510, the first conductive material layer 1610, and the first packaging material layer 1710 are located in the first isolation opening and the second isolation opening.
[0104] Step S140 , removing the first packaging material layer 1710 in the second isolation opening.
[0105] In this embodiment, dry etching may be used to remove the first packaging material layer 1710 in the second isolation opening.
[0106] Step S150: using a preset etching solution to etch the first conductive material layer 1610 to remove the first conductive material layer 1610 in the second isolation opening.
[0107] In this embodiment, the corrosion resistance of the isolation structure 140 to the preset etching solution is greater than the corrosion resistance of the first conductive material layer 1610 to the preset etching solution.
[0108] For example, see Figure 2 and Figure 3 In the process of manufacturing the first sub-pixel P1, when the first conductive material layer 1610 is pattern-etched, the preset etching solution provided in this embodiment is used for etching. Since the corrosion resistance of the isolation structure 140 to the preset etching solution is greater than the corrosion resistance of the first conductive material layer 1610 to the preset etching solution, the preset etching solution will not have a significant impact on the isolation structure 140. That is, Figure 3 As shown, the etching process of step S150 in the manufacturing process of the first sub-pixel P1 does not affect the first undercut length SA2 corresponding to the isolation opening of the second sub-pixel P2.
[0109] Step S160 , removing the first light emitting material layer 1510 in the second isolation opening.
[0110] Based on the above design, in this embodiment, by using a preset etching solution that has less impact on the isolation structure 140 to pattern-etch the conductive material layer (for example, the first conductive material layer), the impact of the manufacturing process of the sub-pixels formed earlier on the isolation structure 140 corresponding to the sub-pixels formed later can be reduced, thereby ensuring the effectiveness and / or consistency of the subsequent electrode evaporation overlap of each sub-pixel and ensuring the display yield.
[0111] In some possible implementations, the preset etching solution does not etch the isolation structure in the second isolation opening, or the isolation structure 140 does not react with the preset etching solution. In this way, the influence of the manufacturing process of the sub-pixel formed earlier on the isolation structure 140 corresponding to the sub-pixel formed later can be avoided, thereby ensuring the effectiveness and / or consistency of the subsequent electrode evaporation overlap of each sub-pixel and ensuring the display yield.
[0112] In some possible implementations, the preset etching solution includes citric acid C6H8O7.
[0113] Furthermore, in some possible implementations, components of the preset etching solution include C6H8O7, HNO3 and CH3COOH.
[0114] Optionally, the mass fraction of C6H8O7 in the preset etching solution is greater than or equal to 15% and less than or equal to 30%, for example, the mass fraction of C6H8O7 may be 15%, 16%, 17%, 18%, 19%, 20%, 21%, 22%, 23%, 24%,, 25%, 26%, 27%, 28%, 29% or 30%. The mass fraction of HNO3 (which can be called nitric acid) is greater than or equal to 5% and less than or equal to 10%, for example, the mass fraction of HNO3 can be 5%, 6%, 7%, 8%, 9% or 10%, and the mass fraction of CH3COOH (which can be called acetic acid) is greater than or equal to 5% and less than or equal to 10%, for example, the mass fraction of CH3COOH can be 5%, 6%, 7%, 8%, 9% or 10%.
[0115] For example, the mass fraction of C6H8O7 is greater than or equal to 21.5% and less than or equal to 30%, the mass fraction of HNO3 is greater than or equal to 5% and less than or equal to 9%, and the mass fraction of CH3COOH is greater than or equal to 5% and less than or equal to 9%.
[0116] For another example, the mass fraction of C6H8O7 is greater than or equal to 20% and less than or equal to 28.8%, the mass fraction of HNO3 is greater than or equal to 5% and less than or equal to 8.8%, and the mass fraction of CH3COOH is greater than or equal to 5% and less than or equal to 8.8%.
[0117] In some possible implementations, step S120 may include the following sub-steps.
[0118] Step S121 , forming an isolation layer on one side of the substrate 110 .
[0119] Step S122, pattern-etching the isolation layer to form an isolation structure 140 having a plurality of isolation openings arranged at intervals. The isolation structure 140 includes a support portion 141 and a shielding portion 142 which are sequentially stacked in a direction away from the substrate 110, and the orthographic projection of the support portion 141 on the substrate 110 is located within the orthographic projection of the shielding portion 142 on the substrate 110. The orthographic projection area of the support portion 141 on the substrate 110 may be smaller than the orthographic projection area of the shielding portion 142 on the substrate 110. The corrosion resistance of the support portion 141 to the preset etching solution is greater than the corrosion resistance of the first conductive material layer 1610 to the preset etching solution. The corrosion resistance of the shielding portion 142 to the preset etching solution is greater than the corrosion resistance of the first conductive material layer 1610 to the preset etching solution. The activity of the material of the shielding portion 142 may be less than the activity of the material of the support portion 141.
[0120] The first undercut lengths of the isolation structure 140 corresponding to the first isolation opening and the second isolation opening are equal or the absolute value of the difference is less than or equal to 0.1 microns (for example, the difference caused by process fluctuations), and the first undercut length is the distance between the orthographic projection of one end of the support portion 141 close to the isolation opening on the substrate 110 to the orthographic projection of one end of the shielding portion 142 close to the isolation opening on the substrate 110.
[0121] For example, see Figure 5 In this embodiment, in the isolation structure 140 manufactured by step S120, the first undercut length SA1 corresponding to the first isolation opening used to form the first sub-pixel P1, the first undercut length SA2 corresponding to the second isolation opening used to form the second sub-pixel P2, and the first undercut length SA3 corresponding to the third isolation opening used to form the third sub-pixel P3 are all equal, that is, in step S120, SA1=SA2=SA3. Alternatively, the absolute value of the difference between any two of the first undercut length SA1 corresponding to the first isolation opening used to form the first sub-pixel P1, the first undercut length SA2 corresponding to the second isolation opening used to form the second sub-pixel P2, and the first undercut length SA3 corresponding to the third isolation opening used to form the third sub-pixel P3 is less than or equal to 0.1 micrometers.
[0122] On this basis, in step S150, the preset etching solution provided in this embodiment is used to pattern-etch the conductive material layer, which can reduce the impact of the etching solution on the support portion 141 of the isolation structure 140, thereby ensuring that the first bottom cut length corresponding to each isolation opening remains unchanged as much as possible.
[0123] By patterning the conductive material layer using a preset etching solution that has less impact on the support portion 141 in the isolation structure, the impact of the manufacturing process of the sub-pixel formed earlier on the receiving portion in the isolation structure of the sub-pixel formed later can be reduced, thereby improving the effectiveness of the overlap between the second electrode 160 and the support portion 141 of the light-emitting devices of different colors, the consistency of the overlap width, the consistency and effectiveness of the electrical connection effect, and ensuring the display yield.
[0124] For example, see Figure 3After the first sub-pixel P1 is manufactured, the first undercut length SA1 corresponding to the isolation opening of the first sub-pixel P1, the first undercut length SA2 corresponding to the isolation opening subsequently used to form the second sub-pixel P2, and the first undercut length SA3 corresponding to the isolation opening subsequently used to form the third sub-pixel P3 are still equal or differ by less than or equal to 0.1 micrometer. In this way, when the second electrode 160 of the second sub-pixel P2 and the second electrode 160 of the third sub-pixel P3 are subsequently formed by evaporation, the same evaporation angle or evaporation process can be used to ensure the effectiveness and / or consistency of the overlap between the second electrode 160 and the isolation structure 140.
[0125] In some possible implementations, in step S121 , a supporting layer and a shielding layer stacked in sequence may be formed on one side of the substrate 110 as an isolation layer.
[0126] In step S122 , the shielding layer and the supporting layer may be processed by dry etching to form the shielding portion 142 and the original supporting portion, and then the original supporting portion may be side-etched by wet etching to form the supporting portion 141 .
[0127] In some possible implementations, the display panel provided in this embodiment may include sub-pixels of multiple luminous colors, and each sub-pixel may be patterned and etched in a conductive material layer using the preset etching solution provided in this embodiment. In this case, the isolation opening corresponding to the light-emitting device currently being manufactured is the first isolation opening, and the isolation openings other than the first isolation opening include the second isolation opening.
[0128] In the case where the light-emitting device corresponding to the first isolation opening is manufactured before the light-emitting device corresponding to the second isolation opening, after step S160, the method may further include: forming a second light-emitting material layer, a second conductive material layer and a second encapsulation material layer in sequence at the second isolation opening. The first light-emitting material layer and the second light-emitting material layer have different luminous colors. In this way, the light-emitting unit 150, the second electrode 160 and the encapsulation unit 170 of the light-emitting device of the second sub-pixel P2 corresponding to the second isolation opening are formed.
[0129] In some other possible implementations, the patterning etching process of the conductive material layer of only some sub-pixels may use the preset etching solution provided in this embodiment. In this case, the isolation opening further includes a third isolation opening.
[0130] Through step S130 to step S160, a light-emitting device of the first sub-pixel P1 corresponding to the first isolation opening can be formed, and the light-emitting device includes a light-emitting unit 150 at least partially located in the first isolation opening, a second electrode 160 and a packaging unit 170. Figure 6 shown.
[0131] In step S140 , the first encapsulation material layer 1710 in the third isolation opening may be removed while the first encapsulation material layer 1710 in the second isolation opening is removed.
[0132] In step S150, the first conductive material layer 1610 in the third isolation opening can be removed while the first conductive material layer 1610 in the second isolation opening is removed. For example, the etching solution is preset not to etch the isolation structure in the second isolation opening.
[0133] In step S160 , the first light emitting material layer 1510 in the third isolation opening may be removed while the first light emitting material layer 1510 in the second isolation opening is removed.
[0134] After step S160, the method provided in this embodiment may further include the following steps.
[0135] In step S210, a second light-emitting material layer, a second conductive material layer and a second packaging material layer are sequentially formed on the side of the substrate 110 where the isolation structure 140 is provided, and at least part of the second light-emitting material layer, the second conductive material layer and the second packaging material layer are located in the first isolation opening, the second isolation opening and the third isolation opening.
[0136] Step S220 , removing the second packaging material layer in the first isolation opening and the third isolation opening.
[0137] Step S230, etching the second conductive material layer with a preset etching solution to remove the second conductive material layer in the first isolation opening and the third isolation opening. The corrosion resistance of the isolation structure to the preset etching solution may be greater than the corrosion resistance of the second conductive material layer to the preset etching solution. The corrosion resistance of the support portion to the preset etching solution may be greater than the corrosion resistance of the second conductive material layer to the preset etching solution. The corrosion resistance of the shielding portion to the preset etching solution may be greater than the corrosion resistance of the second conductive material layer to the preset etching solution.
[0138] Step S240 , removing the second light emitting material layer in the first isolation opening and the third isolation opening.
[0139] Through step S210 to step S240, a light-emitting device of a second sub-pixel P2 corresponding to the second isolation opening can be formed, and the light-emitting device includes a light-emitting unit 150, a second electrode 160 and a packaging unit 170 at least partially located in the second isolation opening. Figure 7 shown.
[0140] The first sub-pixel P1 corresponding to the first isolation opening and the second sub-pixel P2 corresponding to the second isolation opening are formed earlier. Therefore, during the corresponding production processes of the first sub-pixel P1 and the second sub-pixel P2, a preset etching solution is used to formulate patterned etching, which can avoid the influence of the etching process on the isolation structure 140 of the third sub-pixel P3.
[0141] Step S310, a third light emitting material layer, a third conductive material layer and a third packaging material layer are sequentially formed on the side of the substrate 110 provided with the isolation structure 140, and at least part of the third light emitting material layer, the third conductive material layer and the third packaging material layer are located in the first isolation opening, the second isolation opening and the third isolation opening. The first light emitting material layer, the second light emitting material layer and the third light emitting material layer have different luminescent colors.
[0142] Step S320 , removing the third packaging material layer in the first isolation opening and the second isolation opening.
[0143] Step S330, etching the third conductive material layer using a preset etching solution or an etching solution different from the preset etching solution, and removing the third conductive material layer in the first isolation opening and the second isolation opening. The corrosion resistance of the isolation structure to the preset etching solution may be greater than the corrosion resistance of the third conductive material layer to the preset etching solution. The corrosion resistance of the support portion to the preset etching solution may be greater than the corrosion resistance of the third conductive material layer to the preset etching solution. The corrosion resistance of the shielding portion to the preset etching solution may be greater than the corrosion resistance of the third conductive material layer to the preset etching solution.
[0144] Step S340 , removing the third light emitting material layer in the first isolation opening and the second isolation opening.
[0145] After step S240, since the sidewalls of the isolation structure 140 corresponding to the first sub-pixel P1 have been covered and protected by the encapsulation unit 170 corresponding to the first sub-pixel P1, and the sidewalls of the isolation structure 140 corresponding to the second sub-pixel P2 have been covered and protected by the encapsulation unit 170 corresponding to the second sub-pixel P2, they will no longer be affected by the etching solution, and after the third sub-pixel P3, no more pixels need to be made. Therefore, when making the third sub-pixel P3, the isolation opening corresponding to the third sub-pixel P3 is the third isolation opening, and the preset etching solution provided in this embodiment may be used, or the preset etching solution provided in this embodiment may not be used to perform patterned etching of the conductive material layer corresponding to the third sub-pixel P3.
[0146] Through step S310 to step S340, a light-emitting device of a third sub-pixel P3 corresponding to the third isolation opening can be formed, and the light-emitting device includes a light-emitting unit 150, a second electrode 160 and a packaging unit 170 at least partially located in the third isolation opening. Figure 8 shown.
[0147] Please refer to Fig.10 and Fig.11 , the isolation structure 140 also includes a receiving portion 143 located on the side of the support portion 141 close to the substrate 110, and the orthographic projection of the support portion 141 on the substrate 110 is located within the orthographic projection of the receiving portion 143 on the substrate 110. The area of the orthographic projection of the support portion 141 on the substrate 110 is smaller than the area of the orthographic projection of the receiving portion 143 on the substrate 110. The corrosion resistance of the receiving portion to the preset etching solution is greater than the corrosion resistance of the first conductive material layer to the preset etching solution. The corrosion resistance of the receiving portion to the preset etching solution may be greater than the corrosion resistance of the third conductive material layer to the preset etching solution. The corrosion resistance of the receiving portion to the preset etching solution may be greater than the corrosion resistance of the second conductive material layer to the preset etching solution.
[0148] The second undercut lengths of the isolation structures corresponding to the first isolation opening and the second isolation opening are equal or the absolute value of the difference is less than or equal to 0.1 microns (for example, the difference caused by process fluctuations), and the second undercut length is the distance between the orthographic projection of one end of the supporting portion close to the isolation opening on the substrate to the orthographic projection of one end of the shielding portion close to the isolation opening on the substrate.
[0149] Optionally, the first conductive material layer (i.e., the second electrode) of the light-emitting device corresponding to the first sub-pixel P1 is in electrical contact with the receiving portion. The second conductive material layer (i.e., the second electrode) of the light-emitting device corresponding to the second sub-pixel P2 is in electrical contact with the receiving portion. The third conductive material layer (i.e., the second electrode) of the light-emitting device corresponding to the third sub-pixel P3 is in electrical contact with the receiving portion.
[0150] By patterning the conductive material layer using a preset etching solution that has less impact on the connecting portion in the isolation structure, the impact of the manufacturing process of the sub-pixel formed earlier on the connecting portion in the isolation structure of the sub-pixel formed later can be reduced, thereby improving the overlap effectiveness of the second electrode 160 and the connecting portion 143 of the light-emitting devices of different colors, the consistency of the overlap width, and the consistency and effectiveness of the electrical connection effect to ensure the display yield.
[0151] Based on the same concept, this embodiment also provides a display panel. The display panel can be manufactured by the manufacturing method of the display panel provided in this embodiment. Figure 8 The display panel includes a substrate 110 and an isolation structure 140. The display panel also includes a plurality of light emitting devices with different light emitting colors. At least part of the light emitting device is located in the isolation opening.
[0152] The isolation structure 140 is located on one side of the substrate 110, and the isolation structure 140 includes a plurality of isolation openings arranged at intervals; the isolation structure 140 includes a supporting portion 141 and a shielding portion 142 which are stacked in sequence in a direction away from the substrate 110, and the orthographic projection of the supporting portion 141 on the substrate 110 is located within the orthographic projection of the shielding portion 142 on the substrate 110.
[0153] The first undercut lengths of the isolation openings corresponding to at least two light-emitting devices with different light-emitting colors and the isolation structures 140 corresponding to the isolation openings are equal or the absolute value of the difference is less than or equal to 0.1 microns, and the first undercut length is the distance between the orthographic projection of one end of the supporting portion 141 close to the isolation opening on the substrate 110 to the orthographic projection of one end of the shielding portion 142 close to the isolation opening on the substrate 110.
[0154] For example, the first undercut length SA1 corresponding to the first subpixel P1, the first undercut length SA2 corresponding to the second subpixel P2, and the first undercut length SA3 corresponding to the third subpixel P3 are equal, or differ by less than or equal to 0.1 micrometer.
[0155] By patterning the conductive material layer using a preset etching solution that has less impact on the support portion 141 in the isolation structure, the impact of the production process of sub-pixels formed earlier on the support portion 141 in the isolation structure of sub-pixels formed later can be reduced, thereby ensuring the effectiveness and / or consistency of overlapping of subsequent electrode evaporation angles of each sub-pixel, thereby ensuring display yield.
[0156] In some possible implementations, the isolation structure 140 includes at least two isolation openings with different opening sizes, where the opening size is the size of the orthographic projection of the isolation opening on the substrate 110. The first undercut lengths of the isolation structure 140 corresponding to the isolation openings of different sizes are equal or the absolute value of the difference is less than or equal to 0.1 micrometer.
[0157] Optionally, the display panel includes at least two light emitting devices with different light emitting colors, and the isolation openings corresponding to the at least two light emitting devices with different light emitting colors have different opening sizes.
[0158] Optionally, the display panel includes at least three light emitting devices with different luminous colors. The first undercut lengths of the isolation openings corresponding to the light emitting devices with different luminous colors and the isolation structures 140 are equal or the absolute value of the difference is less than or equal to 0.1 micrometer.
[0159] For example, see Fig. 9The display panel provided in this embodiment may include a first sub-pixel P1, a second sub-pixel P2, and a third sub-pixel P3, and the light-emitting colors of the light-emitting devices corresponding to the first sub-pixel P1, the second sub-pixel P2, and the third sub-pixel P3 are different from each other. In this case, at least two of the size W1 of the isolation opening corresponding to the first sub-pixel P1, the size W2 of the isolation opening corresponding to the second sub-pixel P2, and the size W3 of the isolation opening corresponding to the third sub-pixel P3 are different.
[0160] In some possible implementations, the display panel includes at least two light-emitting devices with different luminous colors, at least part of the light-emitting devices are located in the isolation openings, and the first bottom cut lengths of the isolation structures corresponding to the isolation openings corresponding to the light-emitting devices of different luminous colors are equal or the absolute value of the difference is less than or equal to 0.1 microns.
[0161] For some possible implementations, please refer again to Figure 8 The display panel may further include a pixel defining layer 130 .
[0162] The pixel defining layer 130 includes a pixel opening, and the orthographic projection of the pixel opening on the substrate 110 is located within the orthographic projection of the isolation opening on the substrate 110. The pixel opening and the isolation opening are correspondingly connected.
[0163] Optionally, the pixel defining layer 130 is located between the isolation structure 140 and the substrate 110. Alternatively, the pixel defining layer 130 is provided with a clearance opening, and the isolation structure 140 is located in the clearance opening.
[0164] Optionally, in this embodiment, the material of the pixel defining layer 130 may include an inorganic insulating material.
[0165] In some possible implementations, the display panel may further include a light emitting device.
[0166] At least part of the light emitting device is located in the isolation opening, and the light emitting device includes a first electrode 120, a light emitting unit 150, and a second electrode 160 which are sequentially stacked in a direction away from the substrate. One of the first electrode 120 and the second electrode 160 can be an anode, and the other can be a cathode. For example, the first electrode 120 can be a cathode.
[0167] For example, the first electrode 120 may be located on one side of the substrate 110, the pixel defining layer 130 may be located on a side of the first electrode 120 away from the substrate 110, and the pixel opening and the isolation opening may jointly expose at least a portion of the first electrode 120. At least a portion of the light-emitting unit 150 and the second electrode 160 are located in the pixel opening and / or the isolation opening. The isolation structure 140 is conductive, and the second electrode 160 is electrically connected to the isolation structure 140, for example, the second electrode 160 extends from the isolation opening to contact the side wall of the isolation structure 140 facing the isolation opening.
[0168] In some possible implementations, the activity of the material of the support portion 141 is greater than the activity of the material of the shielding portion 142. The support portion 141 may include a metal material. The shielding portion 142 may include a metal material. For example, the material of the support portion 141 includes aluminum, and the material of the shielding portion 142 includes titanium.
[0169] For some possible implementations, see Fig.10 The isolation structure 140 further includes a receiving portion 143 located on a side of the support portion 141 close to the substrate 110, and the orthographic projection of the support portion 141 on the substrate 110 is located within the orthographic projection of the receiving portion 143 on the substrate 110. The area of the orthographic projection of the support portion 141 on the substrate 110 is smaller than the area of the orthographic projection of the receiving portion 143 on the substrate 110. The cross section of the isolation structure 140 may be in an I-shape.
[0170] The receiving portion 143 may include a metal material. Optionally, the receiving portion 143 includes molybdenum.
[0171] Optionally, the second undercut lengths of the isolation structures corresponding to the isolation openings corresponding to the light-emitting devices of at least two different light-emitting colors are equal or the absolute value of the difference is less than or equal to 0.1 microns, and the second undercut length is the distance between the orthographic projection of one end of the supporting part close to the isolation opening on the substrate and the orthographic projection of one end of the shielding part close to the isolation opening on the substrate.
[0172] By patterning the conductive material layer using a preset etching solution that has less impact on the connecting portion in the isolation structure, the impact of the production process of sub-pixels formed earlier on the connecting portion in the isolation structure of sub-pixels formed later can be reduced, thereby ensuring the effectiveness and / or consistency of subsequent electrode evaporation overlap of each sub-pixel and ensuring display yield.
[0173] Optionally, the display panel includes at least three light-emitting devices with different luminous colors, and the second undercut lengths of the isolation structures corresponding to the isolation openings corresponding to the light-emitting devices with different luminous colors are equal or the absolute value of the difference is less than or equal to 0.1 micrometer.
[0174] Optionally, the plurality of light-emitting devices with different luminous colors include a light-emitting device for emitting red light, a light-emitting device for emitting green light, and a light-emitting device for emitting blue light.
[0175] For example, see Fig.11 After completing the production of the first sub-pixel P1, the second undercut length SA4 corresponding to the isolation opening of the first sub-pixel P1, the second undercut length SA5 corresponding to the isolation opening subsequently used to form the second sub-pixel P2, and the second undercut length SA6 corresponding to the isolation opening subsequently used to form the third sub-pixel P3 are still equal or the difference is less than or equal to 0.1 microns.
[0176] Optionally, see some possible implementations. Fig.12 , the second electrode 160 may extend to contact the side of the support portion 141 facing the isolation opening. In other possible implementations, see Fig.13 , the second electrode 160 may extend only to contact the receiving portion 143. The second electrode 160 may or may not be in electrical contact with the supporting portion.
[0177] By patterning the conductive material layer using a preset etching solution that has less impact on the connecting portion in the isolation structure, the impact of the manufacturing process of the sub-pixel formed earlier on the connecting portion in the isolation structure of the sub-pixel formed later can be reduced, thereby improving the effectiveness of the overlap between the second electrode 160 and the connecting portion 143 of the light-emitting devices of different colors, the consistency of the overlap width, the consistency and effectiveness of the conductive effect, and ensuring the display yield.
[0178] In some possible implementations, the display panel further includes an encapsulation unit 170 located on a side of the light emitting device away from the substrate 110 , and the encapsulation unit 170 extends from the isolation opening to a side of the isolation structure 140 away from the substrate 110 .
[0179] Optionally, there is a gap between the packaging units 170 corresponding to adjacent isolation openings, and the gap is located on a side of the isolation structure 140 away from the substrate 110 .
[0180] For some possible implementations, see Fig.14 The display panel further includes a second encapsulation layer 180 and a third encapsulation layer 190 which are located on a side of the first encapsulation layer formed by the encapsulation unit 170 away from the substrate 110 and are sequentially stacked in a direction away from the substrate 111 .
[0181] Optionally, the materials of the first encapsulation layer and the third encapsulation layer 190 include inorganic materials, and the material of the second encapsulation layer 180 includes organic materials. For example, the first encapsulation layer and the third encapsulation layer 190 can be formed by chemical vapor deposition (CVD), and the second encapsulation layer 180 can be formed by inkjet printing (IJP).
[0182] This embodiment also provides an electronic device, which includes a display panel manufactured by the method for manufacturing a display panel provided in this embodiment, or includes the display panel provided in this embodiment. The electronic device may include a mobile phone, a tablet computer, a smart wearable device, a television, a laptop computer, a monitor, and other devices with a display function.
[0183] In summary, the manufacturing method of the display panel, the display panel and the electronic device provided by the present application can reduce the impact of the production process of sub-pixels formed earlier on the isolation structure of sub-pixels formed later by patterning the conductive material layer using a preset etching solution that has less impact on the isolation structure, thereby ensuring the effectiveness and / or consistency of subsequent electrode evaporation overlap of each sub-pixel and ensuring the display yield.
[0184] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.
[0185] The above-mentioned embodiments only express several implementation methods of the present invention, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that, for ordinary technicians in this field, several variations and improvements can be made without departing from the concept of the present invention, and these all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention shall be subject to the attached claims.
Claims
1. A method for manufacturing a display panel, characterized in that: The method comprises: providing a substrate; An isolation structure is formed on one side of the substrate, wherein the isolation structure includes a plurality of isolation openings arranged at intervals; the plurality of isolation openings include a first isolation opening and a second isolation opening; A first light emitting material layer, a first conductive material layer and a first packaging material layer are sequentially formed on a side of the substrate where the isolation structure is provided, wherein at least parts of the first light emitting material layer, the first conductive material layer and the first packaging material layer are located in the first isolation opening and the second isolation opening; removing the first packaging material layer in the second isolation opening; Using a preset etching solution to etch the first conductive material layer to remove the first conductive material layer in the second isolation opening; removing the first light emitting material layer in the second isolation opening; Wherein, the corrosion resistance of the isolation structure to the preset etching solution is greater than the corrosion resistance of the first conductive material layer to the preset etching solution.
2. The method according to claim 1, characterized in that The components of the preset etching solution include C6H8O7, HNO3 and CH3COOH.
3. The method according to claim 3, characterized in that: The mass fraction of C6H8O7 in the preset etching solution is greater than or equal to 15% and less than or equal to 30%, the mass fraction of HNO3 is greater than or equal to 5% and less than or equal to 10%, and the mass fraction of CH3COOH is greater than or equal to 5% and less than or equal to 10%.
4. The method according to claim 1, characterized in that: The step of forming an isolation structure on one side of the substrate comprises: forming an isolation layer on one side of the substrate; The isolation layer is patterned and etched to form the isolation structure, wherein the isolation structure comprises a supporting portion and a shielding portion which are sequentially stacked in a direction away from the substrate, and the orthographic projection of the supporting portion on the substrate is located within the orthographic projection of the shielding portion on the substrate; the first undercut lengths of the isolation structure corresponding to the first isolation opening and the second isolation opening are equal or the absolute value of the difference is less than or equal to 0.1 micrometer, and the first undercut length is the distance between the orthographic projection of one end of the supporting portion close to the isolation opening on the substrate and the orthographic projection of one end of the shielding portion close to the isolation opening on the substrate; The corrosion resistance of the support portion to the preset etching solution is greater than the corrosion resistance of the first conductive material layer to the preset etching solution.
5. The method according to claim 4, characterized in that The isolation structure further includes a receiving portion located on a side of the support portion close to the substrate, and an orthographic projection of the support portion on the substrate is located within an orthographic projection of the receiving portion on the substrate; The area of the orthographic projection of the supporting portion on the substrate is smaller than the area of the orthographic projection of the receiving portion on the substrate; The corrosion resistance of the receiving portion to the preset etching solution is greater than the corrosion resistance of the first conductive material layer to the preset etching solution; The second undercut lengths of the isolation structure corresponding to the first isolation opening and the second isolation opening are equal or the absolute value of the difference is less than or equal to 0.1 micrometer, and the second undercut length is the distance between the orthographic projection of one end of the receiving portion close to the isolation opening on the substrate and the orthographic projection of one end of the shielding portion close to the isolation opening on the substrate; Preferably, the first conductive material layer is in electrical contact with the receiving portion.
6. The method according to claim 1, characterized in that After removing the first light emitting material layer in the second isolation opening, the method further includes: forming a second light-emitting material layer, a second conductive material layer and a second packaging material layer in the second isolation opening; the first light-emitting material layer and the second light-emitting material layer have different light-emitting colors; Alternatively, the isolation opening further includes a third isolation opening; while removing the first packaging material layer in the second isolation opening, removing the first packaging material layer in the third isolation opening; while removing the first conductive material layer in the second isolation opening, removing the first conductive material layer in the third isolation opening; while removing the first light emitting material layer in the second isolation opening, removing the first light emitting material layer in the third isolation opening; After removing the first light emitting material layer in the second isolation opening, the method further includes: A second light emitting material layer, a second conductive material layer and a second packaging material layer are sequentially formed on a side of the substrate where the isolation structure is provided, wherein at least parts of the second light emitting material layer, the second conductive material layer and the second packaging material layer are located in the first isolation opening, the second isolation opening and the third isolation opening; removing the second packaging material layer in the first isolation opening and the third isolation opening; The second conductive material layer is etched using the preset etching solution to remove the second conductive material layer in the first isolation opening and the third isolation opening; the corrosion resistance of the isolation structure to the preset etching solution is greater than the corrosion resistance of the second conductive material layer to the preset etching solution; removing the second light emitting material layer in the first isolation opening and the third isolation opening; A third light-emitting material layer, a third conductive material layer and a third packaging material layer are sequentially formed on one side of the substrate where the isolation structure is provided, wherein at least parts of the third light-emitting material layer, the third conductive material layer and the third packaging material layer are located in the first isolation opening, the second isolation opening and the third isolation opening; and the first light-emitting material layer, the second light-emitting material layer and the third light-emitting material layer have different light-emitting colors; removing the third packaging material layer in the first isolation opening and the second isolation opening; The third conductive material layer is etched using the preset etching solution or an etching solution different from the preset etching solution to remove the third conductive material layer in the first isolation opening and the second isolation opening; the corrosion resistance of the isolation structure to the preset etching solution is greater than the corrosion resistance of the third conductive material layer to the preset etching solution; The third light emitting material layer in the first isolation opening and the second isolation opening is removed.
7. The method according to claim 1, characterized in that The isolation structure does not react with the preset etching solution.
8. A display panel, characterized in that: include: substrate; An isolation structure located on one side of the substrate, the isolation structure comprising a plurality of isolation openings arranged at intervals; The isolation structure comprises a supporting portion and a shielding portion which are sequentially stacked in a direction away from the substrate, wherein the orthographic projection of the supporting portion on the substrate is located within the orthographic projection of the shielding portion on the substrate; A plurality of light-emitting devices with different luminous colors, at least part of the light-emitting devices being located within the isolation opening, the first undercut lengths of the isolation structures corresponding to the isolation openings corresponding to at least two of the light-emitting devices with different luminous colors being equal or the absolute value of the difference being less than or equal to 0.1 micrometer, and the first undercut length being the distance between the orthographic projection of one end of the supporting portion close to the isolation opening on the substrate and the orthographic projection of one end of the shielding portion close to the isolation opening on the substrate.
9. The display panel according to claim 8, characterized in that: The display panel comprises at least three light-emitting devices with different luminous colors, and the first undercut lengths of the isolation openings corresponding to the light-emitting devices with different luminous colors and the isolation structures corresponding to the isolation openings are equal or the absolute value of the difference is less than or equal to 0.1 micrometer; Preferably, the plurality of light-emitting devices with different light-emitting colors include a light-emitting device for emitting red light, a light-emitting device for emitting green light, and a light-emitting device for emitting blue light.
10. The display panel according to claim 8, characterized in that: The display panel further includes: A pixel defining layer, the pixel defining layer comprising a pixel opening, the pixel opening being correspondingly connected to the isolation opening, and an orthographic projection of the pixel opening on the substrate being located within an orthographic projection of the isolation opening on the substrate; Preferably, the pixel defining layer is located between the isolation structure and the substrate, or the pixel defining layer is provided with a clearance opening, and the isolation structure is located in the clearance opening.
11. The display panel according to claim 8, characterized in that: The light emitting device comprises a first electrode, a light emitting unit and a second electrode which are sequentially stacked in a direction away from the substrate.
12. The display panel according to claim 11, characterized in that: The isolation structure is conductive, and the second electrode is electrically connected to the isolation structure; Preferably, the second electrode extends from the isolation opening to contact the side wall of the isolation structure facing the isolation opening; Preferably, the second electrode is in electrical contact with the support portion.
13. The display panel according to claim 12, characterized in that: The activity of the material of the supporting part is greater than that of the material of the shielding part; Preferably, the material of the supporting portion includes aluminum, and the material of the shielding portion includes titanium.
14. The display panel according to claim 11, characterized in that: The isolation structure further includes a receiving portion located on a side of the support portion close to the substrate, and an orthographic projection of the support portion on the substrate is located within an orthographic projection of the receiving portion on the substrate; The area of the orthographic projection of the supporting portion on the substrate is smaller than the area of the orthographic projection of the receiving portion on the substrate; Preferably, the second electrode is in electrical contact with the receiving portion.
15. The display panel according to claim 14, characterized in that: The second undercut lengths of the isolation structures corresponding to the isolation openings corresponding to the light-emitting devices of at least two different light-emitting colors are equal or the absolute value of the difference is less than or equal to 0.1 micrometers, and the second undercut length is the distance between the orthographic projection of one end of the receiving portion close to the isolation opening on the substrate and the orthographic projection of one end of the shielding portion close to the isolation opening on the substrate; Preferably, the display panel comprises at least three light-emitting devices of different luminous colors, and the second undercut lengths of the isolation structures corresponding to the isolation openings corresponding to the light-emitting devices of different luminous colors are equal or the absolute value of the difference is less than or equal to 0.1 micrometer; Preferably, the material of the receiving portion includes molybdenum.
16. The display panel according to claim 8, characterized in that: The display panel further comprises a packaging unit located at a side of the light emitting device away from the substrate, wherein the packaging unit extends from the isolation opening to a side of the isolation structure away from the substrate; Preferably, there is a gap between the packaging units corresponding to adjacent isolation openings, and the gap is located on a side of the isolation structure away from the substrate.
17. The display panel according to claim 16, characterized in that: The display panel further includes a second encapsulation layer and a third encapsulation layer which are located at a side of the encapsulation unit away from the substrate and are sequentially stacked in a direction away from the substrate; Preferably, the material of the encapsulation unit and the third encapsulation layer comprises an inorganic material, and the material of the second encapsulation layer comprises an organic material.
18. The display panel according to claim 8, characterized in that: The isolation structure includes at least two isolation openings with different opening sizes, and the opening size is the size of the orthographic projection of the isolation opening on the substrate.
19. The display panel according to claim 18, characterized in that: The isolation openings corresponding to at least two light-emitting devices with different light-emitting colors have different opening sizes.
20. An electronic device, characterized in that: The electronic device includes a display panel manufactured by the method for manufacturing a display panel according to any one of claims 1 to 7, or includes a display panel according to any one of claims 8 to 19.
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