Detection method, detection device, and program

Abstract

The present invention can provide a technique for bringing a probe into contact with an electrode formed on an object to be detected with good accuracy. Provided is a detection method performed by a detection device provided with a mounting table on which an object to be detected is mounted, and a probe card provided with a probe for detecting the object to be detected, the detection method performing a step of bringing the probe into contact with an electrode on the basis of a first offset value, a step of setting a second offset value on the basis of a needle mark region, and a step of detecting the object to be detected on the basis of the second offset value. The probe mark region is formed by the contact of the probe and the electrode based on the first offset value, and a step of bringing the probe and the electrode into contact based on the second offset value.

Description

Technical Field

[0001] The present invention relates to a detection method, a detection device and a program. Background Art

[0002] In the semiconductor manufacturing process, a detection device (probe station) is used to make the electrodes (pads) included in the wiring pattern formed on the semiconductor wafer contact with the probes, and the electrical characteristics of the wiring pattern are checked by the tester. During the detection, the position where the probe contacts the pad is corrected.

[0003] For example, the probe station disclosed in Patent Document 1 obtains the position of the latest needle mark area produced by the contact between the probe and the electrode among multiple needle mark areas in the post-contact image by comparing the post-contact image of the solder pad after the probe contacts the solder pad with the pre-contact image of the solder pad before the probe contacts the solder pad, and obtains the deviation of the contact position of the probe relative to the solder pad based on the position of the latest needle mark area.

[0004] [Prior art literature]

[0005] [Patent Literature]

[0006] [Patent Document 1] Japanese Patent Application Publication No. 2006-278381 Summary of the invention

[0007] [Problems to be solved by the invention]

[0008] The present invention provides a technology that can bring an electrode formed on a test object into contact with a probe with good accuracy.

[0009]

Methods to solve the problem

[0010] According to one embodiment of the present invention, there is provided a detection method, which is a detection method performed by a detection device having a mounting table for mounting an object to be detected and a probe card provided with probes for detecting the object to be detected, and the detection method performs: a process of bringing the probe into contact with an electrode based on a first offset value, a process of setting a second offset value based on a needle mark area (the needle mark area is a needle mark area formed by bringing the probe into contact with the electrode based on the first offset value), and a process of bringing the probe into contact with the electrode based on the second offset value.

[0011] [Effects of the Invention]

[0012] According to one aspect, an electrode formed on a test object can be brought into contact with a probe with high accuracy. BRIEF DESCRIPTION OF THE DRAWINGS

[0013]

Figure 1

[0014]

Figure 2

[0015]

Figure 3

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Figure 4

[0017]

Figure 5

[0018]

Fig. 6A

[0019]

Figure 6B

[0020]

Figure 7

[0021]

Figure 8

[0022]

Fig. 9

[0023]

Fig.10

[0024]

Fig.11

[0025]

Fig.12

[0026]

Fig.13

[0027]

Fig.14

[0028]

Fig.15

[0029]

Fig.16

[0030] Hereinafter, the mode for implementing the present invention will be described with reference to the accompanying drawings. In some cases, the same components in the drawings are given the same reference numerals, and repeated descriptions are omitted.

[0031] [Implementation Method]

[0032] <Summary>

[0033] In the detection device, as the size of the electrode (solder pad) formed on the electronic device to be detected decreases, higher contact accuracy is required. The deviation of the position (contact position) where the probe contacts the solder pad is caused by a combination of many factors, such as the mechanical accuracy and mechanical error of the detection device, the accuracy and mechanical error of the probe card, the temperature change of the mounting table, and the heating of the semiconductor wafer, so it is difficult to improve the contact accuracy. Regardless of the combination of the detection device, the probe card, and the temperature of the semiconductor wafer, it is important to maintain stable contact accuracy.

[0034] In conventional detection devices, the position of the probe mark area formed by the probe contacting the solder pad is regularly checked, and the offset value for correcting the contact position is adjusted. However, in conventional detection devices, the adjustment of the offset value requires manual work by the user, which reduces the operating efficiency and productivity.

[0035] One embodiment of the present invention is a detection device that automatically adjusts an offset value based on a contact position of a probe contacting a solder pad. The detection device of this embodiment is installed with software, which has an algorithm and a data set for adjusting the contact position of the probe relative to the solder pad based on needle mark data representing an actual contact position, a rule for adjusting the offset value, a predefined set value, and a previously used offset value.

[0036] <Structure of detection device>

[0037] Figure 1 is a schematic cross-sectional view showing an example of a detection device according to the present embodiment. Figure 1 As shown, the detection device 1 includes a mounting table 10 , a mounting table driving unit 20 , a detection unit 30 , an imaging unit 40 , a temperature control device 50 , and a control device 60 .

[0038] The stage 10 fixes a semiconductor wafer W, which is an example of a test object, by suction through a vacuum chuck, an electrostatic chuck, or the like. The stage drive unit 20 moves the stage 10 relative to the detection unit 30 or the imaging unit 40. The imaging unit 40 captures the semiconductor wafer W and obtains a multi-grayscale image of the semiconductor wafer W. The temperature control device 50 controls the temperature of the semiconductor wafer W placed on the stage 10. The control device 60 controls other structures of the detection device 1.

[0039] The stage drive unit 20 includes an X-direction moving mechanism 21, a Y-direction moving mechanism 22, a Z-direction moving mechanism 23, and a rotation mechanism 24. The X-direction moving mechanism 21 moves the stage 10 in the Figure 1 The Y-direction moving mechanism 22 moves the mounting table 10 along the X-direction shown in FIG. Figure 1 The Z-direction moving mechanism 23 moves the mounting table 10 along the Y-direction shown in FIG. Figure 1 The rotation mechanism 24 rotates the mounting table 10 around a rotation axis perpendicular to the XY plane.

[0040] The detection unit 30 includes a probe card 31, probes 32, a test head 33, and an infrared sensor 34. The probe card 31 is disposed above the mounting table 10 so as to face the mounting table 10. On the probe card 31, a plurality of probes 32 as contacts are arranged in two dimensions. The probe card 31 is connected to the test head 33. The test head 33 is connected to an external tester 35.

[0041] When each probe 32 contacts the pad of the electronic device formed on the semiconductor wafer W, each probe 32 supplies the electrical signal output from the tester 35 to the electronic device through the test head 33. In addition, each probe 32 transmits the electrical signal output from the electronic device to the tester 35 through the test head 33. Therefore, the probe 32 and the test head 33 function as a supply component for supplying power (energy) to the electronic device.

[0042] The probe card 31 includes a base substrate and a multilayer ceramic substrate, and a plurality of probes 32 protrude from the multilayer ceramic substrate. An infrared sensor 34 for measuring the temperature of an electronic device during detection is mounted on the multilayer ceramic substrate.

[0043] The infrared sensor 34 is, for example, a non-contact temperature sensor, and detects the temperature of the object to be measured by the amount of infrared radiation emitted based on the temperature of the object. The infrared sensor 34 can adopt various elements used in the past, such as a thermistor. The infrared sensor 34 can be used in the form of an infrared camera or a radiation thermometer.

[0044] The semiconductor wafer placement surface of the placement table 10 has suction holes formed thereon for sucking the semiconductor wafer W. In addition, a plurality of temperature sensors 11 are embedded in the semiconductor wafer placement surface at positions separated from each other in a plan view. As such temperature sensors 11, thermocouples can be used.

[0045] The camera unit 40 includes an illumination unit 41, an optical system 42, and an imaging device 43. The illumination unit 41 emits illumination light. The illumination unit 41 is implemented by, for example, a halogen lamp. The optical system 42 guides the illumination light to the semiconductor wafer W and also allows reflected light from the semiconductor wafer W to enter. The imaging device 43 converts the image of the semiconductor wafer W formed by the optical system 42 into an electrical signal and outputs image data of the semiconductor wafer W. The imaging device 43 is implemented by, for example, arranging CCD (charge coupled device) elements.

[0046] Figure 2 FIG. 1 is a diagram showing an example of a semiconductor wafer W. Figure 2 As shown, a semiconductor wafer W as a substrate to be inspected has a plurality of electronic devices D, which are formed by etching and wiring on a roughly disk-shaped silicon substrate so as to maintain a predetermined interval between each other on its surface. A soldering pad E is formed on the surface of the electronic device D, and the soldering pad E is electrically connected to the circuit elements inside the electronic device D. By applying a voltage to the soldering pad E, a current can flow to the circuit elements inside each electronic device D.

[0047] The temperature control device 50 includes a heating mechanism 51, a cooling mechanism 52, and a temperature controller 53. The temperature control device 50 controls the temperature of the electronic device D formed on the semiconductor wafer W on the mounting table 10 to be constant at a target temperature by controlling the heating by the heating mechanism 51, the cooling by the cooling mechanism 52, and the heating and cooling by the temperature controller 53.

[0048] The heating mechanism 51 is configured as a light irradiation mechanism. The heating mechanism 51 irradiates light onto the semiconductor wafer mounting surface of the mounting table 10 to heat the mounting table 10 , thereby heating the semiconductor wafer W and heating the electronic device D formed on the semiconductor wafer W.

[0049] The heating mechanism 51 has, for example, a plurality of LEDs as a heating source for irradiating light to the semiconductor wafer W. Each LED emits, for example, near-infrared light. The light emitted from the LED passes through the mounting table 10 formed of a light-transmitting member and is incident on the semiconductor wafer mounting surface. When the light from the LED is near-infrared light, polycarbonate, quartz, polyvinyl chloride, acrylic resin, or glass can be used as the light-transmitting member.

[0050] The cooling mechanism 52 has a refrigeration unit for storing a refrigerant and a refrigerant pipe for the refrigerant to flow. As the refrigerant, for example, water, which is a liquid that is permeable to the light irradiated from the heating mechanism 51, can be used. The refrigerant pipe is connected to a supply port and a discharge port of a refrigerant flow path provided inside the mounting table 10, and is connected to the refrigeration unit. The refrigerant in the refrigeration unit is circulated and supplied to the refrigerant flow path through the refrigerant pipe by a pump provided on the refrigerant pipe.

[0051] The temperature controller 53 receives a measurement signal of the temperature of the electronic device D measured by the infrared sensor 34 when the electronic device D is detected. The temperature controller 53 controls the heating mechanism 51 and the cooling mechanism 52 based on the measurement signal to perform feedback control on the temperature of the electronic device D. Thus, the temperature controller 53 performs high-precision temperature control. In addition, the temperature controller 53 switches the temperature measurement signal to the temperature sensor 11 provided on the semiconductor wafer mounting surface of the mounting table 10 to perform temperature control when the temperature controller 53 is not detecting.

[0052] <Hardware Structure of Control Device>

[0053] Figure 3 1 is a block diagram showing an example of the hardware configuration of the control device 60 according to the present embodiment. Figure 3 As shown, the control device 60 includes a CPU (central processing unit) 500, a RAM (random access memory) 501, a ROM (read only memory) 502, an auxiliary storage device 503, a communication interface (I / F) 504, an input / output interface (I / F) 505 and a medium interface (I / F) 506.

[0054] CPU 500 operates to control each unit based on a program stored in ROM 502 or auxiliary storage device 503. ROM 502 stores a boot program executed by CPU 500 when control device 60 is activated, a program depending on the hardware of control device 60, and the like.

[0055] The auxiliary storage device 503 is, for example, a HDD (hard disk drive) or an SSD (solid state drive). The auxiliary storage device 503 stores programs executed by the CPU 500 and data used by the programs. The CPU 500 reads the programs from the auxiliary storage device 503, loads them into the RAM 501, and executes the loaded programs.

[0056] The communication I / F 504 communicates with other structures of the detection device 1 through a communication line such as a LAN (local area network). The communication I / F 504 receives data from other structures of the detection device 1 through the communication line and sends it to the CPU 500, and sends the data generated by the CPU 500 to other structures of the detection device 1 through the communication line.

[0057] The CPU 500 controls input devices such as a keyboard and output devices such as a display screen through the input / output I / F 505. The CPU 500 obtains a signal input from the input device through the input / output I / F 505 and sends it to the CPU 500. In addition, the CPU 500 outputs the generated data to the output device through the input / output I / F 505.

[0058] The medium I / F 506 reads the program or data stored in the recording medium 507 and stores it in the auxiliary storage device 503. The recording medium 507 may be, for example, an optical recording medium such as a DVD (digital versatile disc), a PD (phase change rewritable disc), an optical magnetic recording medium such as an MO (magneto-optical disc), a magnetic tape medium, a magnetic recording medium, or a semiconductor memory.

[0059] The CPU 500 of the control device 60 reads the program loaded on the RAM 501 from the recording medium 507 and stores it in the auxiliary storage device 503 . As another example, the program may be acquired from another device via a communication line and stored in the auxiliary storage device 503 .

[0060] <Functional Structure>

[0061] For the functional configuration of the control device according to this embodiment, refer to Figure 4 Provide explanation. Figure 4 It is a block diagram showing an example of the functional configuration of the control device 60 according to the present embodiment.

[0062] like Figure 4 As shown, the control device 60 involved in this embodiment includes a photographic control unit 601, a needle mark position acquisition unit 602, a warning output unit 603, an offset acquisition unit 604, an offset calculation unit 605, an offset setting unit 606, a detection execution unit 607, a setting information storage unit 610, a needle mark data storage unit 611 and an offset storage unit 612.

[0063] The imaging control unit 601, the needle mark position acquisition unit 602, the warning output unit 603, the offset acquisition unit 604, the offset calculation unit 605, the offset setting unit 606 and the detection execution unit 607 are controlled by, for example, Figure 3 The CPU 500 shown in FIG. 1 executes the program loaded into the RAM 501. The setting information storage unit 610, the needle mark data storage unit 611 and the offset storage unit 612 are configured, for example, by Figure 3 The RAM 501 or the auxiliary storage device 503 shown is implemented.

[0064] In the setting information storage unit 610, setting information for calculating the offset value is pre-stored. The setting information includes a pre-defined rule and a pre-defined setting value. The pre-defined rule includes a calculation rule for controlling the timing of calculating the offset value and a correction rule for correcting the calculated offset value. The setting information can be edited at any time based on the user's operation. The details of the setting information will be described later.

[0065] The needle mark data storage unit 611 stores the needle mark data acquired by the needle mark position acquisition unit 602. The needle mark data is data indicating the position of the needle mark region formed when the probe 32 contacts the solder pad E (ie, the contact position).

[0066] The offset storage unit 612 stores offset information about the offset value set by the offset setting unit 606. The offset information includes the set offset value and environment information indicating the environment when the offset value is calculated. The details of the offset information will be described later.

[0067] The imaging control unit 601 controls the imaging unit 40 to image the semiconductor wafer W including the solder pad E after the probe 32 contacts the semiconductor wafer W. The imaging unit 40 images the semiconductor wafer W mounted on the mounting table 10 according to the control from the imaging control unit 601. The imaging control unit 601 acquires a multi-grayscale image (hereinafter also referred to as a "post-contact image") captured by the imaging unit 40.

[0068] The needle mark position acquisition unit 602 acquires the latest position of the needle mark region from the post-contact image acquired by the imaging control unit 601. The needle mark position acquisition unit 602 stores needle mark data indicating the acquired latest position of the needle mark region in the needle mark data storage unit 611.

[0069] The warning output unit 603 determines whether to bring the probe 32 into contact with the soldering pad E (in other words, whether to continue detection) based on the position of the latest needle mark area acquired by the needle mark position acquisition unit 602. The warning output unit 603 determines whether to bring the probe 32 into contact with the soldering pad E based on the correction rule included in the setting information. When the warning output unit 603 determines that the probe 32 is not brought into contact with the soldering pad E, it outputs a warning to the user and stops the detection.

[0070] For example, the warning output unit 603 may determine that the probe 32 is not in contact with the soldering piece E and output a warning when the cumulative value of the deviation amount between the position of the needle mark area and the center position of the soldering piece E exceeds a predetermined first threshold value. The warning output unit 603 may determine that the probe 32 is not in contact with the soldering piece E and output a warning when the deviation amount between the position of the latest needle mark area and the center position of the soldering piece E exceeds a predetermined second threshold value. The first threshold value or the second threshold value used by the warning output unit 603 for determination may be defined in the setting information.

[0071] The offset acquisition unit 604 acquires offset information including environmental information matching the current environment from the offset information stored in the offset storage unit 612. When the offset acquisition unit 604 acquires offset information matching the current environment, it sends the offset information to the offset setting unit 606.

[0072] The offset calculation unit 605 calculates a new offset value based on the needle mark data stored in the needle mark data storage unit 611. The offset calculation unit 605 calculates a new offset value according to the setting information stored in the setting information storage unit 610.

[0073] The offset setting unit 606 sets the offset value calculated by the offset calculation unit 605 as the current offset value. When receiving the offset information from the offset acquisition unit 604, the offset setting unit 606 sets the offset value included in the offset information as the current offset value.

[0074] The detection execution unit 607 performs electrical detection on the semiconductor wafer W placed on the stage 10 by controlling the stage driving unit 20 and the tester 35. The detection execution unit 607 controls the stage driving unit 20 based on the current offset value set by the offset setting unit 606, thereby making the pads E formed on the semiconductor wafer W placed on the stage 10 contact the probes 32. The tester 35 supplies power to the probes 32 through the test head 33, thereby detecting the electrical characteristics of the electronic device D.

[0075] 《Offset Calculation Department》

[0076] Figure 5 605 is a block diagram showing an example of the functional structure of the offset calculation unit 605 involved in this embodiment. Figure 5 As shown, the offset calculation unit 605 according to the present embodiment includes a needle mark data determination unit 701 , a deviation amount calculation unit 702 , an offset calculation unit 703 , and an offset correction unit 704 .

[0077] The needle mark data determination unit 701 determines needle mark data used for calculating the offset value from the needle mark data stored in the needle mark data storage unit 611. The needle mark data determination unit 701 determines the needle mark data based on the calculation rule and the setting value included in the setting information.

[0078] The deviation amount calculation unit 702 calculates the deviation amount between the position of the needle mark area and the center position of the solder pad E for each of the needle mark data determined by the needle mark data determination unit 701. The deviation amount is the distance between the position of the needle mark area and the center position of the solder pad E, and a vector indicating the direction from the center position of the solder pad E toward the position of the needle mark area.

[0079] The offset calculation unit 703 calculates an offset value based on the offset amount calculated by the offset amount calculation unit 702. The offset calculation unit 703 calculates an offset value according to the offset calculation method included in the setting information.

[0080] The offset correction unit 704 corrects the offset value calculated by the offset calculation unit 703. The offset correction unit 704 corrects the offset value based on the correction rule included in the setting information.

[0081] 《Setting Information》

[0082] Regarding the setting information involved in this embodiment, refer to FIGS. Fig.13 Provide explanation.

[0083] (Calculation rules)

[0084] Figure 6 to Fig.10 1 is a diagram for explaining an example of a calculation rule according to the present embodiment. The calculation rule is a rule for controlling the timing of calculating an offset value.

[0085] Fig. 6A This is a diagram showing a first example of the relationship between needle mark data and offset values ​​according to the prior art. Figure 6B FIG. 2 is a diagram showing a second example of the relationship between needle mark data and offset values ​​in the prior art. Fig. 6A As shown in , the offset value is initially calculated based on the needle mark data, and when the offset value is set, the same offset value is continuously used in subsequent inspections. Figure 6B As shown, an offset value is calculated based on needle mark data, and when the offset value is set, the offset value is used continuously a plurality of times, and the offset value is adjusted at an arbitrary timing.

[0086] Figure 7 FIG. 1 is a diagram showing an example of the relationship between needle mark data and offset values ​​according to the present embodiment. Figure 7 As shown, in this embodiment, an offset value is initially calculated based on needle mark data. When the offset value is set, a detection is performed based on the offset value to obtain needle mark data. Next, a new offset value is calculated based on the obtained needle mark data, and the offset value is corrected according to a predetermined correction rule. Next, a detection is performed based on the corrected offset value to obtain needle mark data again.

[0087] The detection device 1 according to the present embodiment automatically adjusts the offset value by repeatedly acquiring needle mark data, calculating the offset value, and correcting the offset value. As a result, the detection device 1 according to the present embodiment improves operating efficiency and accuracy.

[0088] also, Figure 7 In the example of calculating and correcting the offset value each time one needle mark data is obtained, the offset value may be calculated and corrected when a predetermined number of needle mark data are obtained. The timing of calculating and correcting the offset value may also be defined in the setting information.

[0089] When calculating the offset value using a plurality of needle mark data, the method of determining the needle mark data used for calculating the offset value can be defined. Figure 8 1 is a diagram showing a first example of calculating an offset value using a plurality of needle mark data. Figure 8 In the example shown, the first to fifth semiconductor wafers W1 to W5 are detected, and new offset values ​​are calculated based on the detected semiconductor wafers W1 to W5. Next, based on the new offset values, the sixth to tenth semiconductor wafers W6 to W10 are detected, and new offset values ​​are calculated again based on the detected semiconductor wafers W6 to W10. In this way, it can be set to calculate the offset value based on the five semiconductor wafers W that have been detected most recently.

[0090] Fig. 9 2 is a diagram showing a second example of calculating an offset value using a plurality of needle mark data. Fig. 9 In the example shown, initially, a new offset value is calculated based on the detected semiconductor wafers W1 to W5, then the sixth semiconductor wafer W6 is detected based on the new offset value, and a new offset value is calculated again based on the detected semiconductor wafers W2 to W6. In this way, it can also be set so that the offset value is calculated based on the most recently detected semiconductor wafer W and the four semiconductor wafers W detected before it.

[0091] Fig.10 3 is a diagram showing a third example of calculating an offset value using a plurality of needle mark data. Fig.10 In the example shown, initially, after calculating the new offset value based on the detected semiconductor wafers W1 to W5, the 6th and 7th semiconductor wafers W6 to W7 are detected based on the new offset value, and the new offset value is calculated again based on the detected semiconductor wafers W4 to W8. In this way, it can also be set so that the offset value is calculated based on the two semiconductor wafers W detected most recently and the three semiconductor wafers W detected before them.

[0092] In addition, the number of needle mark data used for calculation of the offset value, among which the number of needle mark data acquired most recently, can be defined in the setting information. For example, Figure 8 In the first example shown, the number of needle mark data may be 5, and the number of the most recent needle mark data may be 5. Similarly, Fig. 9 In the second example shown, the number of needle mark data may be 5, the number of the most recent needle mark data may be 1, Fig.10 In the third example shown, the number of needle mark data may be 5, and the most recent number of needle mark data may be 32.

[0093] (Amendment Rules)

[0094] from Figure 11 to Figure 13 2 is a diagram for explaining an example of a correction rule according to the present embodiment. The correction rule is a rule for correcting an offset value calculated based on needle mark data.

[0095] Fig.11FIG. 2 is a diagram showing an example of needle mark data according to the present embodiment. Fig.11 As shown, the position of the needle mark area can be represented by an XY plane with the center position of the solder piece E as the origin. Fig.11 In the example shown, the positions of the needle mark region used to calculate the current offset value (hereinafter also referred to as "original positions") 91-1 to 91-3 are indicated by black solid circles. In addition, the positions of the needle mark region (hereinafter also referred to as "new positions") 92-1 to 92-3 formed by bringing the probe 32 into contact with the solder pad E based on the current offset value are indicated by white hollow circles.

[0096] In addition, in this embodiment, the calculation of the offset value uses a plurality of needle mark data. Fig.11 In the diagram, the original position and the new position in each stitch data are represented on the same XY plane.

[0097] Fig.12 FIG. 1 is a diagram showing an example of a correction rule according to the present embodiment. Fig.12 As shown, the correction rule according to the present embodiment can be defined as a rule for calculating a new offset value for each combination of the existing range of the original positions 91-1 to 91-3 and the existing range of the new positions 92-1 to 92-3.

[0098] also, Fig.11 In the example shown, the original positions 91-1 to 91-3 and the new positions 92-1 to 92-3 all exist in the same quadrant (that is, there is a tendency for the contact position to deviate in a fixed direction). Fig.12 In the correction rule shown, the original position and the new position are defined by absolute values. When the original position and the new position exist in different quadrants (ie, the contact position deviates in an irregular manner), the correction rule can be defined by a combination of ranges including signs.

[0099] For example, if the original position is within a range of less than ±3 μm from the origin (i.e., the center position of the solder pad E), and the new position is within a range of less than ±3 μm from the origin, the calculated offset value is not corrected and is used as the new offset value. In addition, the calculated offset value is an offset value with the center position of the solder pad E as the target position. Here, the target position refers to the position on the solder pad E with the contact position as the alignment target.

[0100] Furthermore, for example, when the original position is within a range of less than ±3 μm from the origin and the new position is within a range of more than 3 μm and less than ±5 μm from the origin, the calculated offset value is corrected to an offset value for aligning the contact position at a position of ±3 μm. The position of ±3 μm refers to any one of the coordinates (+3, +3), (+3, -3), (-3, +3), (-3, -3) in the XY plane with the center position of the pad E as the origin.

[0101] Which coordinates the contact position is aligned with depends on which quadrant the original and new positions exist in. For example, Fig.11 In the example shown, the original position and the new position exist in the first quadrant, so the offset value is corrected to an offset value for aligning the contact position with the coordinate (+3, +3). If the original position and the new position exist in the third quadrant, the offset value is corrected to an offset value for aligning the contact position with the coordinate (-3, -3).

[0102] Fig.13 Yes Fig.11 The needle mark data shown are for Fig.12 An example of an offset value when correcting the rule is shown in FIG. Fig.13 As shown, the offset value calculated based on the new position 92-1 is directly used as the offset value for aligning the contact position with the center position of the solder tab E. This is because the new position 92-1 exists within a range of less than ±3 μm, and the original position 91-1 corresponding to the new position 92-1 exists within a range of less than ±3 μm.

[0103] In addition, the offset value calculated based on the new position 92-2 is corrected to an offset value for aligning the contact position with the coordinates (+3, +3). This is because the new position 92-2 exists in the range of more than ±3μm and less than ±5μm, and the original position 91-2 corresponding to the new position 92-2 exists in the range of more than ±3μm and less than ±5μm.

[0104] Regarding the new position 92-3, the offset value is not corrected and an alarm is output. This is because the new position 92-3 is within the range of ±7 μm or more. At this time, the detection device 1 stops the detection and does not contact the probe 32 with the soldering pad E according to the offset value calculated based on the new position 92-3.

[0105] Correction rules can define rules for outputting alarms based on the accumulated value of the deviation amount. Fig.12 The correction rule example shown defines that an alarm is output when the cumulative value of the deviation is 10 μm or more. At this time, the detection device 1 stops detection and does not contact the probe 32 with the pad E based on the newly calculated deviation value.

[0106] In addition, the cumulative value of the deviation is calculated including the sign. For example, when the first deviation is +5 and the second deviation is -2, the cumulative value of the deviation is |3|. Here, |·| is a symbol indicating the absolute value of the value·.

[0107] When the deviation of the contact position is large, it is possible that something different from the fluctuation of the contact position caused by the temperature of the probe card 31 or the semiconductor wafer W (for example, a failure of the detection device, etc.) may occur. In addition, when the deviation of the contact position exceeds the area of ​​the solder pad E, the probe 32 may also be in contact outside the area of ​​the solder pad E. Therefore, when the deviation of the contact position is large, the detection is stopped and an alarm is output. Based on the output alarm, the user performs maintenance on the detection device 1 and performs repairs, replacements, etc. as needed. In this way, troubles can be prevented before they occur.

[0108] (Setting value)

[0109] The setting information of this embodiment includes setting values ​​that define reference values ​​used when executing various rules, etc. The setting values ​​of this embodiment include abnormal values, whether to use abnormal values, whether to use initial values, data periods, and offset calculation methods.

[0110] The abnormal value is a setting value that defines a reference value for determining whether needle mark data is an abnormal value. An abnormal value is a value that is significantly different from other needle mark data.

[0111] Whether to use abnormal values ​​is a setting value that defines whether to use needle mark data representing abnormal values ​​for offset value calculation. When abnormal values ​​are used for offset value calculation, accurate offset values ​​may not be calculated. Therefore, you can set whether to use needle mark data representing abnormal values ​​for offset value calculation.

[0112] Whether to use the initial value is a setting value that defines whether to use the initial probe mark data for calculating the offset value. The initial probe mark data refers to the probe mark data when the first semiconductor wafer W of each batch is detected, or when the first semiconductor wafer W is detected after the probe card 31 is replaced. The initial probe mark data may have unstable contact accuracy, and when the initial probe mark data is used for calculating the offset value, it may not be possible to calculate an accurate offset value. Therefore, it is possible to set whether to use the initial probe mark data for calculating the offset value.

[0113] The data period is a setting value that defines the period of the needle mark data used for calculating the offset value. The period of the needle mark data is the number of semiconductor wafers detected from the first needle mark data used for calculating the offset value to the last needle mark data. For example, if the offset value is calculated using 5 needle mark data and the data period is 20, the offset value is calculated when 5 or more semiconductor wafers can obtain usable needle mark data out of the 20 semiconductor wafers detected.

[0114] For example, when the needle mark area cannot be identified from the post-contact image, needle mark data may not be generated when inspecting the semiconductor wafer W. If the period from the first needle mark data to the last needle mark data is long, it may not be possible to calculate an appropriate offset value. Therefore, the period of needle mark data used for calculating the offset value is defined.

[0115] The offset calculation method is a setting value that defines the number of needle mark data used for calculating the offset value and the type of statistical value calculated based on the needle mark data. The number of needle mark data per semiconductor wafer used for calculating the offset value is, for example, 4 points or 5 points. The statistical value that can be set is, for example, the arithmetic mean, median, centroid, moving average, etc.

[0116] Offset Information

[0117] For the offset information involved in this embodiment, refer to Fig.14 Provide explanation. Fig.14 This is a conceptual diagram showing an example of offset information involved in this embodiment.

[0118] like Fig.14 As shown, the offset information involved in this embodiment is information associated with the offset value, unit number, type, probe card number, temperature and update time. Among them, the unit number, type, probe card number and temperature are environmental information indicating the environment when calculating the offset value.

[0119] The unit number is identification information for identifying the position of the semiconductor wafer W in the detection system having a plurality of detection devices. The type is information indicating the type of the electronic device D. The probe card number is identification information for identifying the type of the probe card 31. The temperature is the temperature of the semiconductor wafer W or the semiconductor wafer mounting surface of the mounting table 10. The update time is information indicating the time for setting the offset value.

[0120] <Processing Order>

[0121] Regarding the detection method involved in this embodiment, refer to Fig.15 Provide explanation. Fig.15 1 is a flowchart showing an example of the detection method according to the present embodiment. The detection method according to the present embodiment is executed by the detection device 1 .

[0122] In step S1, first, the imaging control unit 601 controls the imaging unit 40 to photograph the solder pads E of the semiconductor wafer W placed on the stage 10. Next, the detection execution unit 607 controls the stage driving unit 20 based on the current offset value stored in the storage unit such as the auxiliary storage device 503 to move the stage 10 to the bottom of the detection unit 30. As a result, the plurality of solder pads E formed on the semiconductor wafer W placed on the stage 10 and the plurality of probes 32 are in a state of facing each other.

[0123] Next, the detection execution unit 607 controls the stage driving unit 20 to raise the stage 10 with a certain overlap amount. As a result, the plurality of probes 32 are in contact with each of the plurality of solder pads E facing them. At this time, the tip of the probe 32 pressed against the solder pad E slightly scrapes the surface of the solder pad E, thereby ensuring the conduction between the probe 32 and the solder pad E.

[0124] Next, the detection execution unit 607 instructs the tester 35 to start the detection. The tester 35 outputs a specified electrical signal to the test head 33. The electrical signal output from the tester 35 is supplied to the pad E of the semiconductor wafer W through the test head 33 and the probe 32. The electrical signal output from the pad E of the semiconductor wafer W is output to the tester 35 through the probe 32 and the test head 33. The tester 35 evaluates the electrical characteristics of the semiconductor wafer W based on the electrical signal output to the test head 33 and the electrical signal output from the test head 33, and outputs the evaluation result to the control device 60.

[0125] When the inspection is finished, the inspection execution unit 607 controls the stage driving unit 20 to lower the stage 10. Thus, the probe 32 is separated from the solder pad E, and the contact mark made by the probe 32 (ie, the latest probe mark area) remains on the solder pad E.

[0126] In step S2, the imaging control unit 601 controls the stage driving unit 20 to move the stage 10 below the imaging unit 40. Thus, the semiconductor wafer W mounted on the stage 10 and the imaging device 43 are brought into a facing state.

[0127] Next, the imaging control unit 601 controls the imaging unit 40 to image the semiconductor wafer W mounted on the mounting table 10. Thus, a multi-gradation post-contact image including the bonding pads E on the semiconductor wafer W is acquired.

[0128] Next, the imaging control unit 601 acquires the post-contact image output from the imaging unit 40. The imaging control unit 601 sends the acquired post-contact image to the needle mark position acquisition unit 602.

[0129] In step S3, the needle mark position acquisition unit 602 receives the post-contact image from the imaging control unit 601. Next, the needle mark position acquisition unit 602 acquires the latest position of the needle mark area and the center position of the solder pad E from the post-contact image. A method of acquiring the latest position of the needle mark area from the post-contact image is disclosed in Patent Document 1, for example.

[0130] Next, the needle mark position acquisition unit 602 generates needle mark data indicating the position of the acquired needle mark region. Next, the needle mark position acquisition unit 602 stores the generated needle mark data in the needle mark data storage unit 611 .

[0131] In step S4, the warning output unit 603 obtains the latest needle mark data from the needle mark data storage unit 611. Next, the warning output unit 603 reads the setting information from the setting information storage unit 610. Next, the warning output unit 603 determines whether to make the probe 32 contact the solder pad E (that is, whether to continue the detection) based on the correction rule included in the setting information.

[0132] Specifically, the warning output unit 603 calculates the deviation between the position of the latest needle mark area and the center position of the solder piece E based on the latest needle mark data obtained. Next, the warning output unit 603 adds the calculated deviation to the cumulative value of the deviation stored in the storage unit. When the cumulative value of the deviation is greater than the threshold of the cumulative value included in the correction rule, the warning output unit 603 determines not to bring the probe 32 into contact with the solder piece E (i.e., not to continue detection). On the other hand, when the cumulative value of the deviation is less than the threshold of the cumulative value included in the correction rule, the warning output unit 603 determines to bring the probe 32 into contact with the solder piece E (i.e., to continue detection).

[0133] The warning output unit 603 may determine not to bring the probe 32 into contact with the soldering pad E when the deviation amount based on the latest needle mark data is greater than the threshold value of the deviation amount included in the correction rule. At this time, the warning output unit 603 may determine to bring the probe 32 into contact with the soldering pad E when the deviation amount based on the latest needle mark data is less than the threshold value of the deviation amount included in the correction rule.

[0134] When the warning output unit 603 determines that the probe 32 is not in contact with the solder pad E (i.e., the detection is not continued) (No), the process is performed in step S5. On the other hand, when the warning output unit 603 determines that the probe 32 is in contact with the solder pad E (i.e., the detection is continued) (Yes), the process is performed in step S6.

[0135] In step S5, the warning output unit 603 outputs a warning to the user. The warning is output to an output device such as a display screen through the input / output I / F 505 provided in the control device 60. Then, the warning output unit 603 ends the processing of the detection method.

[0136] In step S6, the offset acquisition unit 604 acquires the current environment. The current environment is the type of electronic device D, the identification information of the probe card 31, and the temperature of the semiconductor wafer W or the semiconductor wafer mounting surface of the mounting table 10. The type of electronic device D and the identification information of the probe card 31 are input into the control device 60 by the user and stored in the storage unit.

[0137] The temperature of the semiconductor wafer W is acquired from the infrared sensor 34. The temperature of the semiconductor wafer mounting surface of the mounting table 10 is acquired from the temperature sensor 11. When the semiconductor wafer W is mounted on the mounting table 10, the temperature of the semiconductor wafer W can be acquired from the infrared sensor 34. On the other hand, when the semiconductor wafer W is not mounted on the mounting table 10, the temperature of the semiconductor wafer mounting surface of the mounting table 10 can be acquired from the temperature sensor 11.

[0138] Next, the offset acquisition unit 604 acquires offset information including environmental information matching the current environment from the offset information stored in the offset storage unit 612. When the current temperature matches the temperature when the current offset value is calculated, the offset acquisition unit 604 does not acquire the offset information. When the current temperature does not match the temperature when the current offset value is calculated, the offset acquisition unit 604 acquires offset information matching the type of the electronic device D and the identification number of the probe card 31.

[0139] In addition, whether the temperature matches can be determined by whether it is included in a temperature band with a certain width. For example, if the current temperature and the temperature when the current offset value is calculated are within ±10°C, the temperature matches.

[0140] In step S7, the offset acquisition unit 604 determines whether the offset information matching the current environment has been acquired. If the offset information matching the current environment has not been acquired (No), the offset acquisition unit 604 proceeds to step S8. Alternatively, if the offset information matching the current environment has been acquired, the offset acquisition unit 604 may proceed to step S8.

[0141] When the offset information matching the current environment has been acquired (Yes), the offset acquisition unit 604 sends the acquired offset information to the offset setting unit 606. At this time, the offset acquisition unit 604 deletes the needle mark data stored in the needle mark data storage unit 611. Then, the offset acquisition unit 604 skips step S8 and proceeds to step S9.

[0142] In step S8 , the offset calculation unit 605 calculates a new offset value based on the needle mark data stored in the needle mark data storage unit 611 and the setting information stored in the setting information storage unit 610 . The offset calculation unit 605 sends the calculated new offset value to the offset setting unit 606 .

[0143] 《Offset calculation processing》

[0144] Regarding the offset calculation process involved in this embodiment ( Fig.15 For details of step S8), refer to Fig.16 Provide explanation. Fig.16 This is a flowchart showing an example of the offset calculation process according to the present embodiment.

[0145] In step S8 - 1 , the needle mark data determination unit 701 reads the setting information stored in the setting information storage unit 610 . Next, the needle mark data determination unit 701 reads the needle mark data stored in the needle mark data storage unit 611 .

[0146] In step S8 - 2 , the needle mark data determination unit 701 determines the needle mark data used for calculating the offset value among the needle mark data read in step S8 - 1 based on the calculation rule and the setting value included in the setting information.

[0147] The needle mark data determination unit 701 first extracts needle mark data included in a predefined data period. Next, the needle mark data determination unit 701 determines whether to use needle mark data indicating an abnormal value based on whether a predefined abnormal value is used. When needle mark data indicating an abnormal value is not used, the needle mark data determination unit 701 excludes needle mark data having a larger deviation than the predefined abnormal value from the extracted needle mark data.

[0148] Next, the needle mark data determination unit 701 determines whether to use the initial needle mark data based on whether the predefined initial value is used. When the initial needle mark data is not used, the needle mark data determination unit 701 removes the initial needle mark data from the extracted needle mark data.

[0149] In step S8-3, the needle mark data determining unit 701 determines whether the needle mark data required for calculating the offset value can be obtained in step S8-1. The needle mark data determining unit 701 determines whether the needle mark data required for calculating the offset value can be obtained by determining whether the number of needle mark data required by the predefined offset calculation method is satisfied.

[0150] When the needle mark data required for calculating the offset value can be obtained (Yes), the needle mark data determination unit 701 sends the determined needle mark data to the deviation amount calculation unit 702 for processing in step S8-4. On the other hand, when the needle mark data required for calculating the offset value cannot be obtained (No), the needle mark data determination unit 701 ends the offset calculation processing.

[0151] In step S8-4, the deviation amount calculation unit 702 receives the needle mark data from the needle mark data determination unit 701. Next, the deviation amount calculation unit 702 calculates the deviation amount between the position of the needle mark area and the center position of the solder piece E for each of the received needle mark data. Next, the deviation amount calculation unit 702 sends each calculated deviation amount to the offset calculation unit 703.

[0152] In step S8-5, the offset calculation unit 703 receives each offset amount from the offset calculation unit 702. Next, the offset calculation unit 703 calculates an offset value based on each offset amount according to the offset calculation method included in the setting information. Next, the offset calculation unit 703 sends the calculated offset value to the offset correction unit 704.

[0153] In step S8-6, the offset correction unit 704 receives the offset value from the offset calculation unit 703. Next, the offset correction unit 704 corrects the offset value by applying the correction rule included in the setting information. Next, the offset correction unit 704 outputs the corrected offset value as a new offset value.

[0154] The offset correction unit 704 first determines the ranges of the original position and the new position on the XY plane. Next, the offset correction unit 704 obtains a predefined correction rule based on a combination of the existing range of the original position and the existing range of the new position. Next, the offset correction unit 704 corrects the calculated offset value based on the obtained correction rule. In addition, according to the obtained correction rule, the calculated offset value is sometimes used directly, and sometimes the calculated offset value is abandoned and an alarm is output.

[0155] Back to Fig.15 In step S9, the offset setting unit 606 receives a new offset value from the offset calculation unit 605 or the offset acquisition unit 604. The offset setting unit 606 sets the received new offset value as the current offset value. Specifically, the offset setting unit 606 updates the current offset value stored in the storage unit to the new offset value. Therefore, in the subsequent processing, the new offset value received from the offset calculation unit 605 or the offset acquisition unit 604 is used as the current offset value.

[0156] In step S10, the detection execution unit 607 performs electrical detection on the semiconductor wafer W mounted on the mounting table 10 by controlling the mounting table driving unit 20 and the tester 35 based on the current offset value stored in the storage unit (i.e., the new offset value set in step S9). The detection sequence is the same as that of step S1, so the description is omitted here.

[0157] <Effects of Implementation Methods>

[0158] The detection device 1 in the present embodiment sets a new offset value based on the needle mark area formed by bringing the probe 32 into contact with the solder pad E based on the current offset value, and brings the probe 32 into contact with the solder pad E based on the new offset value. That is, the detection device 1 in the present embodiment automatically adjusts the offset value based on the needle mark area formed by bringing the probe 32 into contact with the solder pad E. Therefore, according to the detection device 1 in the present embodiment, the solder pad E formed on the electronic device D can be brought into contact with the probe 32 with good accuracy.

[0159] The detection device 1 in this embodiment associates and stores the set offset value with the environmental information when the offset value is calculated, and uses the offset value when there is an offset value calculated in the same environment. Therefore, the detection device 1 in this embodiment reuses the offset value with a practical result, so that the solder pad E formed on the electronic device D can be brought into contact with the probe 32 with good accuracy.

[0160] The detection device 1 in this embodiment calculates the offset value according to different rules based on the deviation between the position of the needle mark area and the center position of the solder pad E. The rules for calculating the offset value are stored as setting information and can be edited appropriately. Therefore, according to the detection device 1 in this embodiment, appropriate rules can be set based on the tendency of the deviation of the contact position, so that the solder pad E formed on the electronic device D can be accurately contacted with the probe 32.

[0161] The detection device 1 in this embodiment determines whether to make the probe 32 contact with the soldering piece E based on the deviation between the position of the needle mark area and the center position of the soldering piece E. The detection device 1 in this embodiment does not make the probe 32 contact with the soldering piece E and outputs an alarm when the deviation is greater than a predetermined threshold. Therefore, according to the detection device 1 in this embodiment, it is possible to prevent accidents before they happen.

[0162] [Supplement]

[0163] In the above-mentioned embodiment, the current offset value is an example of the first offset value. The new offset value is an example of the second offset value. The detection device and the detection method involved in the embodiment disclosed this time are examples and not limitations in all points. The embodiment can be deformed and improved in various forms without departing from the attached claims and their main purpose. The matters recorded in the above-mentioned multiple embodiments can also take other structures within the scope of non-contradiction, and can also be combined within the scope of non-contradiction.

[0164] This application claims priority based on Japanese Patent Application No. 2022-153611 filed with the Japan Patent Office on September 27, 2022, the entire contents of which are incorporated herein by reference.

[0165] [Reference Signs]

[0166] W Semiconductor Wafer

[0167] D. Electronic equipment

[0168] E Soldering Lug

[0169] 1. Detection device

[0170] 10. Loading table

[0171] 11 Temperature Sensor

[0172] 20 Stage drive unit

[0173] 21 X-direction moving mechanism

[0174] 22 Y direction moving mechanism

[0175] 23 Z-direction moving mechanism

[0176] 24 Rotation mechanism

[0177] 30 Detection Units

[0178] 31 Probe Card

[0179] 32 Probe

[0180] 33 Test Head

[0181] 34 Infrared sensor

[0182] 35 Tester

[0183] 40 Camera Unit

[0184] 41 Lighting Department

[0185] 42 Optical System

[0186] 43 Camera Equipment

[0187] 50 Temperature control device

[0188] 51 Heating mechanism

[0189] 52 Cooling mechanism

[0190] 53 Temperature Controller

[0191] 60 Control device

[0192] 601 Photography Control Department

[0193] 602 Needle Mark Position Acquisition Unit

[0194] 603 Warning output unit

[0195] 604 offset acquisition unit

[0196] 605 Offset calculation unit

[0197] 606 offset setting unit

[0198] 607 Detection Execution Department

[0199] 610 Setting information storage unit

[0200] 611 Needle Mark Data Storage Unit

[0201] 612 offset storage unit

[0202] 701 Needle Mark Data Determination Unit

[0203] 702 Deviation calculation unit

[0204] 703 Offset Calculation Department

[0205] 704 Offset Correction Unit

Claims

1. A detection method, which is a detection method performed by a detection device having a mounting table for mounting a target object and a probe card, wherein the probe card is provided with probes for detecting the target object, and the detection method performs: a step of bringing the probe into contact with an electrode formed on the object to be detected based on a first offset value, a step of setting a second offset value based on a needle mark region formed by contact between the probe and the electrode based on the first offset value; and and bringing the probe into contact with the electrode based on the second offset value.

2. The detection method according to claim 1, further comprising the step of storing the second offset value in association with at least one of the type of the object to be detected, the type of the probe card, and the temperature of the object to be detected or the temperature of the mounting table.

3. The detection method according to claim 2, further comprising the step of acquiring the second offset value based on the type of the object to be detected, the type of the probe card, the temperature of the object to be detected, or the temperature of the mounting table. 4 . The detection method according to claim 3 , wherein the second offset value is calculated according to a different rule based on a deviation between a position of the needle mark area and a center position of the electrode. 5 . The detection method according to claim 4 , wherein the rule includes a rule that causes target positions at which the probe contacts the electrode to be different.

6. According to the detection method of claim 5, the target position is determined based on the positional relationship between the position of the needle mark area used to calculate the first offset value and the position of the needle mark area formed by the probe contacting the electrode based on the first offset value.

7. The detection method according to any one of claims 1 to 6, further comprising the step of determining whether to bring the probe into contact with the electrode based on the deviation between: The position of the needle mark area formed by the contact between the probe and the electrode and the center position of the electrode are determined based on the first offset value.

8. The detection method according to claim 7, wherein the step of determining is: Whether or not the probe is brought into contact with the electrode is determined by comparing a cumulative value of the amount of deviation between the position of the needle mark region and the center position of the electrode with a predetermined threshold value.

9. The detection method according to claim 8, further comprising the step of outputting a warning when it is determined that the probe is not in contact with the electrode.

10. A detection device comprising a mounting table for mounting a detection object, a probe card, and a control device, wherein the probe card is provided with probes for detecting the detection object. The control device performs: a step of bringing the probe into contact with an electrode formed on the object to be detected based on a first offset value, a step of setting a second offset value based on a needle mark region formed by contact between the probe and the electrode based on the first offset value, and bringing the probe into contact with the electrode based on the second offset value.

11. A program for causing a control device for controlling a detection device to execute the following steps, the detection device comprising a mounting table for mounting a detection object and a probe card, the probe card having probes for detecting the detection object: a step of bringing the probe into contact with an electrode formed on the object based on a first offset value, a step of setting a second offset value based on a needle mark area formed by contact between the probe and the electrode based on the first offset value, and A step of bringing the probe into contact with the electrode based on the second offset value.

Images