Cleaning device and cleaning method for cleaning wafer bearing device

Abstract

The embodiment of the invention provides a cleaning device and a cleaning method for cleaning a wafer bearing device, and the cleaning device comprises a rotating part, the wafer bearing device is located on the rotating part, the rotating part is used for driving the wafer bearing device to rotate along a first direction and a second direction, and the first direction is different from the second direction. And the accommodating part is positioned around the wafer bearing device, and the accommodating part and a part of the wafer bearing device are used for accommodating a cleaning substance with a cleaning function. The ultrasonic generating device is located below the rotating part, and the ultrasonic generating device is in a working state in at least part of the process that the wafer bearing device rotates in the first direction and the second direction, and is used for enabling at least part of the cleaning substances to generate morphological change so as to obtain a target state; at least part of the cleaning substance in the target state is in contact with the wafer bearing device so as to clean the wafer bearing device.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor manufacturing, and in particular to a cleaning device and a cleaning method for cleaning a wafer carrier. Background Art

[0002] In the process of manufacturing semiconductor devices, material deposition and etching are essential and important links. In the process of material deposition and etching operations, the wafer carrier plays an important role. It supports the wafer in the process of manufacturing semiconductor devices and ensures the stability of the process operation. However, with the continuous progress of the production process, in actual operation, there are still many problems with the wafer carrier that need to be improved. Summary of the invention

[0003] The present disclosure provides a cleaning device for cleaning a wafer carrier, the cleaning device comprising: A rotating part, on which the wafer carrying device is located, and the rotating part is used to drive the wafer carrying device to rotate along a first direction and a second direction, wherein the first direction is different from the second direction; A containing component, the containing component is located around the wafer carrying device, and the containing component and part of the wafer carrying device are used to contain a cleaning material with a cleaning function; The ultrasonic generating device is located below the rotating part. During at least part of the process in which the wafer carrier rotates along the first direction and the second direction, the ultrasonic generating device is in working state, and is used to cause at least part of the cleaning material to change its shape to obtain a target state. At least part of the cleaning material in the target state contacts with the wafer carrier to clean the wafer carrier.

[0004] The embodiment of the present disclosure also provides a method for cleaning a wafer carrier, wherein a receiving component is disposed around the wafer carrier, and a cleaning material having a cleaning function is contained in the receiving component and a part of the wafer carrier, and the method comprises: Providing a wafer carrier to be cleaned; Rotating wafer carrier; Providing ultrasonic waves to the cleaning material to change the shape of at least a portion of the cleaning material to obtain a target state, and at least a portion of the cleaning material in the target state contacts the wafer carrier to clean the wafer carrier; Wherein, rotating the wafer supporting device includes rotating the wafer supporting device along a first direction and rotating the wafer supporting device along a second direction, and the first direction and the second direction are different.

[0005] In some embodiments, rotating the wafer support along a first direction includes: In a first time period, rotating the wafer carrier in a first direction at a first rotation speed; In the second time period, the rotation speed of the wafer carrying device rotating along the first direction is reduced to 0; Rotating the wafer support along a second direction includes: In a third time period, the rotation speed of the wafer carrier is accelerated from 0 to a second rotation speed along the second direction; Wherein, one of the first direction and the second direction is a clockwise direction, and the other is a counterclockwise direction; Provides ultrasonic waves to cleaning materials, including: After a preset time period after the start of the first time period, and in the second time period and the third time period, ultrasonic waves are provided to the cleaning material.

[0006] In some embodiments, the first rotation speed ranges from 50 rpm to 150 rpm; the second rotation speed ranges from 50 rpm to 150 rpm.

[0007] In some embodiments, the time range of the second time period is between 0.5s and 2s, and the time range of the third time period is between 0.5s and 2s.

[0008] In some embodiments, after accelerating the rotation speed of the wafer carrier from 0 to the second rotation speed along the second direction, rotating the wafer carrier along the second direction further includes: In a fourth time period, the wafer carrying device continues to rotate in the second direction at the second rotation speed; In a fifth time period, the rotation speed of the wafer carrier rotating along the second direction is reduced from the second rotation speed to 0; Providing ultrasonic waves to the cleaning material also includes: In the fourth time period and the fifth time period, ultrasonic waves are provided to the cleaning substance.

[0009] In some embodiments, the first time period ranges from 5s to 15s, and the fourth time period ranges from 5s to 15s.

[0010] In some embodiments, the wafer carrier includes a clamp and a chuck; And / or, the cleaning substance includes ultrapure water having a preset temperature.

[0011] In some embodiments, during the cleaning process, the cleaning material is replenished; and / or, The flow rate when replenishing cleaning material is between 500ml / min and 2000ml / min.

[0012] In some embodiments, after providing ultrasonic waves to the cleaning material to change the morphology of the cleaning material to obtain a target state, and at least a portion of the cleaning material in the target state contacts the wafer carrier to clean the wafer carrier, the cleaning method further includes: The wafer carrier is dried.

[0013] The cleaning device and cleaning method for cleaning a wafer carrier provided in the embodiments of the present disclosure include: a rotating part, on which the wafer carrier is located, and the rotating part is used to drive the wafer carrier to rotate along a first direction and a second direction, the first direction being different from the second direction; a containing component, which is located around the wafer carrier, and the containing component and part of the wafer carrier are used to contain a cleaning substance with a cleaning function; an ultrasonic generator located below the rotating part, which is in a working state during at least part of the process in which the wafer carrier rotates along the first direction and the second direction, and is used to cause the cleaning substance to change its shape to obtain a target state, and the cleaning substance in the target state contacts at least part of the wafer carrier to clean the wafer carrier. It can be understood that in the cleaning device provided in the embodiment of the present disclosure, the wafer carrier rotates with a variable rotation direction, and during the rotation of the wafer carrier, the ultrasonic generating device is in a working state. The sound energy provided by the ultrasonic generating device can cause the cleaning material to change its form, for example, it can change from a liquid state to a bubble state, etc., that is, to reach a target state. When the cleaning material in the target state comes into contact with the contaminants on the wafer carrier, the resulting bubble bursting can have a strong impact on the contaminants, thereby allowing the contaminants to separate from the wafer carrier and achieve the purpose of cleaning.

[0014] The details of one or more embodiments of the present disclosure are set forth in the accompanying drawings and the description below. Other features and advantages of the present disclosure will become apparent from the description and the drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0016] Figure 1 A schematic diagram of the structure of a cleaning device provided in an embodiment of the present disclosure; Figure 2 A schematic diagram of the three-dimensional structure of a cleaning device provided in an embodiment of the present disclosure; Figure 3 A flowchart of a cleaning method provided by an embodiment of the present disclosure; Figure 4 One of the flow charts of the cleaning method provided in the embodiment of the present disclosure; Figure 5 The second flow chart of the cleaning method provided in the embodiment of the present disclosure; Figure 6 The third flow chart of the cleaning method provided in the embodiment of the present disclosure; Figure 7 A fourth flow chart of the cleaning method provided in the embodiment of the present disclosure; Figure 8 A fifth flow chart of the cleaning method provided in the embodiment of the present disclosure; Fig. 9 The sixth flow chart of the cleaning method provided in the embodiment of the present disclosure; Fig.10 The seventh flow chart of the cleaning method provided in the embodiment of the present disclosure; Fig.11 The eighth flow chart of the cleaning method provided in the embodiment of the present disclosure; Fig.12 A ninth flow chart of the cleaning method provided in the embodiment of the present disclosure; Fig.13 The tenth flowchart of the cleaning method provided in the embodiment of the present disclosure; Fig.14 11 is a flow chart of a cleaning method provided in an embodiment of the present disclosure; Fig.15 A schematic diagram of a cleaning substance provided in an embodiment of the present disclosure cleaning a wafer carrier during deceleration and acceleration; Fig.16 A schematic diagram of a process of removing contaminants from a wafer carrier provided by an embodiment of the present disclosure; Fig.17 A schematic diagram of performing a drying process on a wafer carrier provided in an embodiment of the present disclosure. DETAILED DESCRIPTION

[0017] The exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although the exemplary embodiments of the present disclosure are shown in the accompanying drawings, it should be understood that the present disclosure can be implemented in various forms and should not be limited by the specific embodiments set forth herein. On the contrary, these embodiments are provided in order to enable a more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

[0018] In the following description, a large number of specific details are given to provide a more thorough understanding of the present disclosure. However, it is obvious to those skilled in the art that the present disclosure can be implemented without one or more of these details. In other examples, in order to avoid confusion with the present disclosure, some technical features known in the art are not described; that is, all features of actual embodiments are not described here, and well-known functions and structures are not described in detail.

[0019] In the drawings, the sizes of layers, regions, elements and their relative sizes may be exaggerated for clarity. Like reference numerals denote like elements throughout.

[0020] It should be understood that when an element or layer is referred to as "on ...", "adjacent to ...", "connected to" or "coupled to" other elements or layers, it can be directly on, adjacent to, connected to or coupled to other elements or layers, or there can be intervening elements or layers. On the contrary, when an element is referred to as "directly on ...", "directly adjacent to ...", "directly connected to" or "directly coupled to" other elements or layers, there is no intervening element or layer. It should be understood that although the terms first, second, third, etc. can be used to describe various elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Therefore, without departing from the teachings of the present disclosure, the first element, component, region, layer or part discussed below can be represented as the second element, component, region, layer or part. And when the second element, component, region, layer or part is discussed, it does not indicate that the present disclosure necessarily has the first element, component, region, layer or part.

[0021] Spatial relationship terms such as "under", "below", "below", "under", "above", "above", etc., may be used here for convenience of description to describe the relationship between an element or feature shown in the figure and other elements or features. It should be understood that in addition to the orientation shown in the figure, the spatial relationship terms are intended to include different orientations of the device in use and operation. For example, if the device in the accompanying drawings is turned over, then the elements or features described as "under other elements" or "under it" or "under it" will be oriented as "on" other elements or features. Therefore, the exemplary terms "under" and "under" may include both upper and lower orientations. The device can be oriented otherwise (rotated 90 degrees or other orientations) and the spatial descriptors used herein are interpreted accordingly.

[0022] The purpose of the terms used herein is only to describe specific embodiments and is not intended to be a limitation of the present disclosure. When used herein, the singular forms "one", "an" and "said / the" are also intended to include plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "consisting of" and / or "comprising", when used in this specification, determine the presence of the features, integers, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups. When used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0023] In the preparation process of semiconductor devices, material deposition and etching are essential and important links. For example, in some wet processes, when thicker material layers need to be removed, including but not limited to oxide layers, it is often necessary to use multiple liquids, such as acidic and alkaline liquids, to achieve the removal operation. This can easily leave difficult-to-remove contaminants on the wafer carrier after the process is completed, such as crystallized salts.

[0024] If these contaminants cannot be removed in time, it is easy for some of them to fall off during subsequent operations, causing scratches on the wafers placed in this environment, affecting the final production yield.

[0025] Based on this, the following technical solutions of the embodiments of the present disclosure are proposed: The present disclosure provides a cleaning device for cleaning a wafer carrier, the cleaning device comprising: A rotating part, on which the wafer carrying device is located, and the rotating part is used to drive the wafer carrying device to rotate along a first direction and a second direction, wherein the first direction is different from the second direction; A containing component, the containing component is located around the wafer carrying device, and the containing component and part of the wafer carrying device are used to contain a cleaning material with a cleaning function; The ultrasonic generating device is located below the rotating part. During at least part of the process in which the wafer carrier rotates along the first direction and the second direction, the ultrasonic generating device is in working state, and is used to cause at least part of the cleaning material to change its shape to obtain a target state. At least part of the cleaning material in the target state contacts with the wafer carrier to clean the wafer carrier.

[0026] It can be understood that in the cleaning device provided in the embodiment of the present disclosure, the wafer carrier rotates with a variable rotation direction, and during the rotation of the wafer carrier, the ultrasonic generating device is in a working state. The sound energy provided by the ultrasonic generating device can cause the cleaning material to change its form, for example, it can change from a liquid state to a bubble state, etc., that is, to reach a target state. When the cleaning material in the target state comes into contact with the contaminants on the wafer carrier, the resulting bubble bursting can have a strong impact on the contaminants, thereby allowing the contaminants to separate from the wafer carrier and achieve the purpose of cleaning.

[0027] In order to make the above-mentioned purposes, features and advantages of the present disclosure more obvious and easy to understand, the specific implementation methods of the present disclosure are described in detail below in conjunction with the accompanying drawings. When describing the embodiments of the present disclosure in detail, for the convenience of explanation, the schematic diagram will not be partially enlarged according to the general proportion, and the schematic diagram is only an example, which should not limit the scope of protection of the present disclosure.

[0028] Figure 1 A schematic diagram of the structure of a cleaning device provided in an embodiment of the present disclosure; Figure 2 The schematic diagram of the three-dimensional structure of the cleaning device provided by the embodiment of the present disclosure is as follows. It should be noted that in order to clearly show the relationship between the structure around the chuck and the chuck, the chuck is located near the Figure 2 The semi-transparent treatment method is used for exemplary purposes only and is not used to limit the structure of the chuck.

[0029] like Figure 1 and Figure 2 As shown, the cleaning device Z comprises: A rotating part 20 , on which the wafer carrying device 10 is located, and the rotating part 20 is used to drive the wafer carrying device 10 to rotate along a first direction X and a second direction Y, wherein the first direction X is different from the second direction Y; A receiving component C, which is located around the wafer carrying device 10, and the receiving component C and a part of the wafer carrying device 10 are used to receive a cleaning material A having a cleaning function; The ultrasonic generating device 30 located below the rotating part 20 is in working state during at least part of the process that the wafer carrier 10 rotates along the first direction X and the second direction Y, and is used to cause at least part of the cleaning substance A to change its shape to obtain the target state Q. At least part of the cleaning substance A in the target state Q contacts the wafer carrier 10 to clean the wafer carrier 10.

[0030] In some embodiments, the wafer carrying device 10 includes a clamp 11 and a chuck 12. The clamp 11 is used to clamp and fix the chuck 12. The chuck 12 is used to support the target wafer during the process of performing the process operation on the target wafer to prevent the target wafer from shifting during the operation.

[0031] In some embodiments, the rotating portion 20 may include but is not limited to a spin base, and the spin base may be driven by a spin motor to rotate around a rotation axis, thereby driving the wafer carrier 10 to rotate along the first direction X and the second direction Y.

[0032] In some embodiments, the cleaning device Z can be used in combination with a cleaning device E, such as a wet cleaning device, and the accommodating component C can be the side wall of the structure for placing the wafer carrier 10 in the cleaning device E, and can even include a bottom structural part. In actual operation, it can be selected and set according to actual conditions, and no specific limitation is made here.

[0033] In some embodiments, the chuck 12 and the receiving component C are used together to contain a cleaning material A having a cleaning function.

[0034] In some embodiments, one of the first direction X and the second direction Y is a clockwise direction, and the other is a counterclockwise direction.

[0035] In some embodiments, the first direction X may be a clockwise direction, and the second direction Y may be a counterclockwise direction, but is not limited thereto. In other embodiments, the first direction X may be a counterclockwise direction, and the second direction Y may be a clockwise direction. Specifically, the direction may be flexibly selected according to actual conditions and is not specifically limited herein.

[0036] In some embodiments, the ultrasonic generator 30 is used to convert acoustic energy into mechanical energy. It converts the acoustic energy of the high-power ultrasonic frequency source into mechanical vibration through a transducer, and radiates ultrasonic waves into the cleaning material A through the bottom plate of the chuck 12 .

[0037] It is understandable that in the preparation process of semiconductor devices, wet process operations are indispensable. When forming the required structure or important structural layer in the semiconductor wet process, acidic and alkaline liquids are often used in the step at the same time. For example, after using a mixture of hydrofluoric acid (HF) + ammonium hydroxide / hydrogen peroxide / deionized water (APM) to remove a thicker material layer (such as an oxide film layer), the APM liquid is used to remove the particles on the surface with its high cleaning power. Since acid and alkaline liquids are used at the same time in this operation step, it is very easy to form pollutants W, such as crystallized salts (including but not limited to ammonium fluoride, etc.). When the crystals adhere to the clamp 11 (clamp) of the wafer carrying device 10 that carries the wafer, it is easy to cause product failure (defect). This is because when the wafer rotates at high speed, there is a possibility that the crystals will fall off, and the fallen crystals are likely to be thrown onto the equipment structure in the surrounding area and then rebound onto the wafer (such as Figure 6 Scratches or particle maps are formed on the wafer W0 in the process. In normal operation, this phenomenon is usually handled by cleaning with a dust-free cloth during preventive maintenance (PM), but the cleaning effect is limited. At the same time, as production capacity increases, conventional wiping methods are difficult to effectively solve this problem.

[0038] In the embodiment of the present disclosure, due to the radiation of ultrasonic waves S, the cleaning material A is transformed from a liquid state to a target state Q, such as but not limited to a bubble state, a microbubble state and a vibration state, etc. The bubbles or microbubbles can maintain vibration under the action of sound waves, thereby having a certain impact effect on the contaminants W attached to the wafer carrier 10, reducing their adhesion strength on the wafer carrier 10, thereby removing the contaminants W from the wafer carrier 10.

[0039] Furthermore, since in the disclosed embodiment, the wafer carrier 10 also has a situation where the rotation direction changes, so that in this process, there are acceleration and deceleration processes. On the basis that the cleaning substance A produces the cleaning substance in the target state Q, the acceleration and deceleration settings are coordinated to make the wafer carrier 10 and the cleaning substance A contact more fully and more forcefully, so that in this process, the cleaning substance A can play a role in strengthening the impact force on the different surfaces of the clamp 11 in the wafer carrier 10 and the different regional positions of the chuck 12, so that the crystals are peeled off through the bubble bursting, and the contaminants W stubbornly on the surface of the wafer carrier 10, such as crystal salt, are removed, so that the contaminants W at different positions have a good cleaning effect. In this way, it can reduce the situation that the contaminants W will cause scratches or particles (particle map) when they fall onto the surface of the wafer W0 to be processed in the subsequent process, which is conducive to improving the production yield and reducing the risk of product failure.

[0040] In some embodiments, the cleaning substance A includes but is not limited to liquid cleaning fluid, solid cleaning substance, gaseous cleaning substance or at least one of other cleaning substances, which is not specifically limited here and can be flexibly selected according to actual conditions.

[0041] In some specific embodiments, the cleaning substance A includes a cleaning liquid.

[0042] In some embodiments, the ultrasonic generating device 30 may include but is not limited to an ultrasonic vibrator and the like.

[0043] In some embodiments, the ultrasonic frequency range of the ultrasonic generating device 30 when in working state is between 30 kHz and 100 kHz (including the endpoint values), for example, 35 kHz, 40 kHz, 45 kHz, 50 kHz, 55 kHz, 60 kHz, 65 kHz, 70 kHz, 75 kHz, 80 kHz, 85 kHz, 90 kHz, 95 kHz, etc.

[0044] The present disclosure also provides a method for cleaning the wafer carrier 10. Figure 1 and Figure 2 As shown, a receiving component C is disposed around the wafer carrier 10, and a cleaning material A having a cleaning function is contained in the receiving component C and a part of the wafer carrier 10, such as Figure 3 As shown, the method includes the following steps: Step S101: providing a wafer carrying device to be cleaned; Step S102: rotating the wafer carrying device; Step S103: providing ultrasonic waves to the cleaning material, so that at least a portion of the cleaning material undergoes a morphological change to obtain a target state, and at least a portion of the cleaning material in the target state contacts the wafer carrier to clean the wafer carrier; Wherein, rotating the wafer supporting device includes rotating the wafer supporting device along a first direction and rotating the wafer supporting device along a second direction, and the first direction and the second direction are different.

[0045] It should be understood that although Figure 3 The steps in the process are shown in sequence as indicated by the arrows, but the steps are not necessarily executed in the order indicated by the arrows. Unless otherwise specified in this document, there is no strict order restriction for the execution of the steps, and the steps can be executed in other orders. Figure 3 At least part of the steps may include multiple sub-steps or multiple stages. These sub-steps or stages are not necessarily executed at the same time, but can be executed at different times. The execution order of these sub-steps or stages is not necessarily sequential, but can be executed in turn or alternately with other steps or at least part of the sub-steps or stages of other steps.

[0046] In some embodiments, Figures 4 to 6 As shown, the wafer carrying device 10 includes a clamp 11 and a chuck 12. The clamp 11 is used to clamp and fix the chuck 12. The chuck 12 is used to support the target wafer during the process of performing the process operation on the target wafer to prevent the target wafer from shifting during the operation.

[0047] like Figure 5 As shown, in the wafer carrier 10, due to various possible reasons, the area B circled in the fixture 11 is an area where contaminants W are more likely to be generated. The area B can be understood to include the area located in the area directly opposite to the observer's visual field and the areas located on both sides of the area and in the area circled by area B when viewed from direction a. However, it is not limited to this. It can be understood that when the cleaning method provided in the embodiment of the present disclosure is adopted, both the contaminants W on the chuck 12 and the contaminants W on the fixture 11 can be effectively removed. The cleaning method provided in the embodiment of the present disclosure does not make special requirements for the location of the contaminants W. The contaminants W can be effectively removed in any area that can be reached by the cleaning substance A.

[0048] In some embodiments, Figure 2As shown, the cleaning method can be implemented in a cleaning device E, such as a wet cleaning device. The accommodating component C can be the side wall of the structure for placing the wafer carrier 10 in the cleaning device E, and may even include a bottom structural part. In actual operation, it can be selected and set according to actual conditions, and no specific limitation is made here.

[0049] In some embodiments, the cleaning equipment E may further include other structures 13 for fixing or lifting purposes, which may be configured according to actual conditions and are not specifically limited here.

[0050] In some embodiments, Figure 1 and Fig.16 As shown in FIG. (1), when ultrasonic waves S are provided to the cleaning material A, an ultrasonic wave generator 30 can be used to convert acoustic energy into mechanical energy, and the ultrasonic wave generator converts the acoustic energy of the power ultrasonic frequency source into mechanical vibration through a transducer. In the process of providing ultrasonic waves S, the ultrasonic waves are radiated into the cleaning material A through the chuck 12 chassis. Due to the irradiation of ultrasonic waves, the cleaning material A is transformed from a liquid state to a target state Q, such as but not limited to a bubble state, a microbubble state, and a vibration state, etc. The cleaning material A, bubbles, or microbubbles can maintain vibration under the action of the sound waves, thereby exerting a certain impact effect on the contaminants W attached to the wafer carrier 10, reducing their adhesion strength on the wafer carrier 10, so that the contaminants W are separated from the wafer carrier 10.

[0051] In some embodiments, the ultrasonic generating device 30 may include but is not limited to an ultrasonic vibrator and the like.

[0052] In some embodiments, the ultrasonic frequency range of the ultrasonic generating device 30 when in working state is between 30 kHz and 100 kHz (including the endpoint values), for example, 35 kHz, 40 kHz, 45 kHz, 50 kHz, 55 kHz, 60 kHz, 65 kHz, 70 kHz, 75 kHz, 80 kHz, 85 kHz, 90 kHz, 95 kHz, etc.

[0053] In some embodiments, the cleaning substance A includes but is not limited to liquid cleaning fluid, solid cleaning substance, gaseous cleaning substance or at least one of other cleaning substances, which is not specifically limited here and can be flexibly selected according to actual conditions.

[0054] In some specific embodiments, Figure 7 As shown, the cleaning substance A includes a cleaning solution. Further, in some embodiments, the cleaning substance A includes ultrapure water with a preset temperature.

[0055] In some embodiments, the preset temperature can range from 25°C to 100°C (including endpoint values), for example, 30°C, 35°C, 40°C, 45°C, 50°C, 55°C, 60°C, 65°C, 70°C, 75°C, 80°C, 85°C, 90°C, 95°C, etc.

[0056] In some specific embodiments, the preset temperature may range from 70° C. to 100° C. (including endpoints).

[0057] Understandable, such as Figure 7 As shown, Figure 7 Figure (1) is a schematic diagram of the cleaning material A cleaning the wafer carrier 10 during the rotation process. Figure 7 Figure (2a) and Figure 7 Figure (2b) in the figure is a schematic diagram of the first cleaning substance A1 with a higher preset temperature (for example, ultrapure water HDIW with a temperature range of 70°C to 100°C) and the second cleaning substance A2 with a lower preset temperature (for example, ultrapure water DIW with a room temperature) under the action of ultrasonic wave S so that the cleaning substance A has a target state Q. It can be seen that the cavitation effect of ultrasonic wave S in the first cleaning substance A1 (for example, ultrapure water HDIW with a higher preset temperature) is stronger. The higher the temperature, the more target state Q, such as the number of bubbles, is generated per unit volume.

[0058] However, it should be noted that, compared with conventional cleaning methods, the second cleaning substance A2 (eg, ultrapure water DIW with a lower preset temperature) can also improve the cleaning effect in the method provided by the embodiment of the present disclosure.

[0059] In some embodiments, Figures 8 to 12 As shown, the wafer carrying device 10 is rotated along the first direction X, including: In the first time period T1, the wafer carrier 10 is rotated along the first direction X at a first rotation speed V1 (for details, please refer to Figure 8 and Fig.10 ); In the second time period T2, the rotation speed of the wafer carrier 10 rotating along the first direction X is reduced to 0 (for details, please refer to Fig.11 ); Rotating the wafer carrying device 10 along the second direction Y includes: In the third time period T3, the rotation speed of the wafer carrier 10 is accelerated from 0 to the second rotation speed V2 along the second direction Y (for details, please refer to Fig.12 ); Wherein, one of the first direction X and the second direction Y is a clockwise direction, and the other is a counterclockwise direction; Providing ultrasonic waves S to the cleaning material A, including: After the first time period T1 starts, after a preset time period h (i.e., the period after T1-h belonging to T1), and in the second time period T2 and the third time period T3, ultrasonic waves S are provided to the cleaning material A (for details, please refer to Figures 10 to 12 ).

[0060] In some embodiments, one of the first direction X and the second direction Y is a clockwise direction, and the other is a counterclockwise direction.

[0061] In some embodiments, the first direction X may be a clockwise direction, and the second direction Y may be a counterclockwise direction, but is not limited thereto. In other embodiments, the first direction X may be a counterclockwise direction, and the second direction Y may be a clockwise direction. Specifically, the direction may be flexibly selected according to actual conditions and is not specifically limited herein.

[0062] In some embodiments, the first rotational speed V1 ranges from 50rpm to 150 rpm (including endpoint values), for example, 60rpm, 70rpm, 80rpm, 85rpm, 90rpm, 95rpm, 100rpm, 105rpm, 110rpm, 115rpm, 120rpm, 130rpm, 140rpm, 150rpm, etc., for example; the second rotational speed V2 ranges from 50rpm to 150 rpm (including endpoint values), for example, 60rpm, 70rpm, 80rpm, 85rpm, 90rpm, 95rpm, 100rpm, 105rpm, 110rpm, 115rpm, 120rpm, 130rpm, 140rpm, 150rpm, etc.

[0063] In some embodiments, during the cleaning process, cleaning material A is replenished; and / or, When the replenishing device 40 is used to replenish the cleaning material A, the flow rate range is between 500ml / min and 2000ml / min (including the endpoint values), for example, 600ml / min, 700ml / min, 800ml / min, 1000ml / min, 1200ml / min, 1400ml / min, 1500ml / min, 1600ml / min, 1800ml / min, 2000ml / min, etc.

[0064] In some embodiments, the first speed V1 and the second speed V2 may be the same, but are not limited thereto. In actual operation, the two may also be different. Specifically, the first speed V1 and the second speed V2 may be different according to the needs. Fig. 9For example, when the contaminants W are more on the first surface S1 than on other surfaces, the rotation speed set in the clockwise direction can be larger, so that a stronger impact force can be generated on the first surface S1 during the rotation, acceleration and deceleration of the wafer carrier 10. Similarly, when the contaminants W are more on the second surface S2 than on other surfaces, the rotation speed set in the counterclockwise direction can be larger, so that a stronger impact force can be generated on the second surface S2 during the rotation, acceleration and deceleration of the wafer carrier 10.

[0065] References Figure 8 and Fig. 9 It can be seen that after the first time period T1 starts and before the preset time h is reached, when the ultrasonic wave S is not applied, there are only a small amount of bubbles Q1 in the cleaning material A. At this time, by rotating the wafer carrier 10 at a suitable rotation speed (first rotation speed V1), the water film formed by the cleaning material A on the chuck 12 (chuck) in the wafer carrier 10 has good fluidity and rotates in a vortex. However, when the rotation speed is a relatively large speed V+ or a relatively small rotation speed V-, this effect cannot be achieved.

[0066] In addition, it can be understood that during the entire cleaning process, with the participation of ultrasonic waves S, when the wafer carrier 10 maintains a suitable rotation speed (the first rotation speed V1 or the second rotation speed V2), and the cleaning material A with a suitable flow rate is supplemented, the proportion of the cleaning material A in the target form Q in the cleaning material A can be increased on the chuck 12 (chuck) in the wafer carrier 10. These bubbles of the cleaning material A with the target form Q are highly attached to the roots of the contaminants W. The strong impact generated during the bubble bursting process can impact the surface contaminants W, achieving the effect of loosening the connection. At the same time, the cleaning material A that is not in the target form Q can continuously produce the cleaning material A with the target form Q under the action of ultrasonic waves S, the appropriate rotation speed and the continuous supplementation of the cleaning material A, so that the wafer carrier 10 can continuously produce an effective cleaning effect.

[0067] It can be understood that the impact forms an obtuse angle between the clamp 11 (clamp) and the first surface S1 (and also the second surface S2 when rotating in the opposite direction), and then is thrown out under the centrifugal force of the chuck 12 (chuck), which has a cleaning effect on the chuck 12 during the rotation process. Furthermore, the cleaning method provided by the embodiment of the present disclosure not only has a good cleaning effect on the side of the clamp 11 facing the center of the chuck, but also helps to have a good cleaning effect on the entire clamp 11, including but not limited to the adjacent surfaces of the surface on the side facing the center of the chuck (the side surface of the clamp 11), that is, the first surface S1 and the second surface S2. Therefore, it can have a good cleaning effect on the contaminants W on the wafer carrier 10, reduce the occurrence of wafer scratches caused by the falling of contaminants W in the subsequent process, and help reduce the risk of product failure and improve the yield.

[0068] Continue to refer Figure 1 , Fig.10 and Fig.16 As shown in FIG. (1), when ultrasonic waves S are provided to the cleaning material A for a preset time length h after the start of the first time period T1, i.e., the time period after T1-h, the ultrasonic wave generating device 30 is placed at the bottom of the chuck 12. The radiation of ultrasonic waves S generates a large amount of cleaning material A in the target state Q in the cleaning material A. The cleaning material A in the target state Q (for example, the microbubble state) can keep vibrating under the action of the sound waves.

[0069] like Fig.11 , Fig.15 and Fig.16 As shown in the middle figure of Figure (2), in the second time period T2, it is a deceleration state. At this time, the wafer carrier 10 is reduced from the first rotation speed V1 to a rotation speed of 0 (clockwise, positive deceleration). In this process, when the chuck 12 (chuck) stops rotating, in this deceleration process, the cleaning material A in the target state Q is subjected to an inertial force, the direction of the force is biased to the right, and the contact with the second surface S2 side of the clamp 11 (sub-clamp 111) is tighter. The bubbles are highly attached to the roots of the contaminants on the second surface S2 side. The cleaning material A in the target state Q (for example, the microbubble state) produces a strong impact when the bubbles burst, and the surface contaminants W are hit to generate a force F1, loosening the connection, so that the contaminants W leave the surface of the wafer carrier 10.

[0070] like Fig.12 and Fig.16As shown in the right side of Figure (2), in the third time period T3, it is an accelerated state. At this time, the wafer carrier 10 accelerates from a rotation speed of 0 to a second rotation speed of V2 (counterclockwise, reverse deceleration). In this process, the contaminant W and the fixture 11 (sub-clamp 111) are subjected to an inertial force F2, and the direction of the force is biased to the left. The contaminant and the fixture 11 (sub-clamp 111) are located on the second surface S2 and are removed in the same principle, thereby achieving the effect of removing the contaminants located on the first surface S1.

[0071] In some embodiments, the time range of the second time period is between 0.5s and 2s (including endpoint values), such as 0.5s, 1s, 1.5s, 2s, etc., and the time range of the third time period is between 0.5s and 2s (including endpoint values), such as 0.5s, 1s, 1.5s, 2s, etc.

[0072] In some embodiments, Fig.13 and Fig.14 As shown, after accelerating the rotation speed of the wafer carrier 10 from 0 to the second rotation speed V2 along the second direction Y, rotating the wafer carrier 10 along the second direction Y, further comprising: In a fourth time period T4, the wafer carrying device 10 continues to rotate along the second direction Y at the second rotation speed; In the fifth time period T5, the rotation speed of the wafer carrying device 10 rotating along the second direction Y is reduced from the second rotation speed to 0; Providing ultrasonic waves to the cleaning material also includes: The ultrasonic wave S is provided to the cleaning substance A during the fourth period T4 and the fifth period T5.

[0073] In some embodiments, the first time period T1 ranges from 5s to 15s (including endpoint values), for example, 5s, 6s, 7s, 8s, 9s, 10s, 11s, 12s, 13s, 14s, etc., and the fourth time period T4 ranges from 5s to 15s (including endpoint values), for example, 5s, 6s, 7s, 8s, 9s, 10s, 11s, 12s, 13s, 14s, etc.

[0074] In some specific embodiments, the first time period T1 and the fourth time period T4 may both range from 5s to 15s (including the endpoint values).

[0075] In some embodiments, the range of the fifth time period T5 may be the same as the range of the second time period T2 or the third time period T3, but is not limited thereto. They may also be different and are not specifically limited here.

[0076] Regarding the role played in the fourth time period T4 and the fifth time period T5 in the wafer carrier 10, please refer to the above content for correspondence and will not be elaborated here. The purpose of executing these multiple steps is to better remove the contaminant W to reduce the damage to the wafer in the later stage and improve the yield.

[0077] In some embodiments, Fig.17 As shown, after providing ultrasonic waves S to the cleaning material A to change the shape of the cleaning material to obtain a target state Q, and at least a portion of the cleaning material A in the target state Q contacts the wafer carrier 10 to clean the wafer carrier 10, the cleaning method further includes: The wafer carrier 10 is subjected to a drying process.

[0078] In some embodiments, Fig.17 As shown, the wafer carrier 10 is subjected to a drying process, including: In the case of no application of ultrasonic waves, while the wafer carrier 10 keeps rotating, the wafer carrier 10 is purged using a nozzle P containing a preset gas G, wherein the preset gas G includes but is not limited to nitrogen (N2) or any other suitable gas type.

[0079] In some embodiments, when the wafer carrier 10 is purged, the rotation speed of the wafer carrier 10 is between 800rpm and 1500rpm (including endpoint values), for example, 900rpm, 1000rpm, 1100rpm, 1200rpm, 1300rpm, 1400rpm, 1500rpm, etc., and the time range is between 10s and 40s (including endpoint values), for example, 15s, 20s, 25s, 30s, 35s, etc. The specific rotation speed and time range can be flexibly selected according to actual conditions, and no specific limitation is made here.

[0080] In some embodiments, Fig.17 As shown, during the drying process of the wafer carrier 10, the angle between the nozzle P and the wafer carrier 10 can be 45°, and when the nozzle P on the robot B is purging, the movement trajectory of the nozzle P can refer to any one of the first trajectory D1 and the second trajectory D2. Among them, point O can be the center point of the wafer carrier 10, or the center point or center point of the chuck 12. The first trajectory D1 here can be understood as the direction from point O to the boundary of the wafer carrier 10 or the chuck 12, and the second trajectory D2 can be understood as the trajectory obtained when a point on the boundary of the wafer carrier 10 or the chuck 12 is moved in a straight line and then passes through point O to reach another point on the boundary of the wafer carrier 10 or the chuck 12.

[0081] In some embodiments, if the wafer carrier 10 or the chuck 12 is approximately regarded as a circular structure, the first trajectory D1 can be understood as a trajectory along the radial direction, and the second trajectory D2 can be understood as a trajectory along the diameter direction.

[0082] In some specific embodiments, if the wafer carrier 10 or the chuck 12 is roughly understood as a circular structure, and the radius is 150 mm, the nozzle P (or the preset gas G) when performing the drying process using the first trajectory D1 can start from a position 50 mm away from the center of the circle and continue to perform the purge operation until it reaches a position 148 mm away from the center of the circle and stops the purge operation.

[0083] The various technical features in the technical solutions recorded in the embodiments provided in the present disclosure can be arbitrarily combined without conflict.

[0084] The above description is only a preferred embodiment of the present disclosure and is not intended to limit the protection scope of the present disclosure. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present disclosure should be included in the protection scope of the present disclosure.

Claims

1. A cleaning device for cleaning a wafer carrier, characterized in that: The cleaning device comprises: A rotating part, the wafer carrying device is located on the rotating part, and the rotating part is used to drive the wafer carrying device to rotate along a first direction and a second direction, and the first direction is different from the second direction; A containing component, the containing component is located around the wafer carrying device, and the containing component and a part of the wafer carrying device are used to contain a cleaning material with a cleaning function; The ultrasonic generating device located below the rotating part is in working state during at least part of the process when the wafer carrier rotates along the first direction and the second direction, and is used to change the shape of at least part of the cleaning material to obtain a target state. At least part of the cleaning material in the target state contacts with the wafer carrier to clean the wafer carrier.

2. A method for cleaning a wafer carrier, characterized in that: The wafer carrying device is surrounded by a receiving component, and the receiving component and a part of the wafer carrying device contain a cleaning material with a cleaning function. The method includes: Providing a wafer carrier to be cleaned; Rotating the wafer carrying device; Providing ultrasonic waves to the cleaning material to change the shape of at least a portion of the cleaning material to obtain a target state, and at least a portion of the cleaning material in the target state contacts the wafer carrier to clean the wafer carrier; Wherein, rotating the wafer carrying device includes rotating the wafer carrying device along a first direction and rotating the wafer carrying device along a second direction, and the first direction and the second direction are different.

3. The cleaning method according to claim 2, characterized in that: Rotating the wafer support along a first direction includes: In a first time period, rotating the wafer carrier in a first direction at a first rotation speed; In the second time period, the rotation speed of the wafer carrying device rotating along the first direction is reduced to 0; Rotating the wafer support along a second direction includes: In a third time period, accelerating the rotation speed of the wafer carrier from 0 to a second rotation speed along the second direction; Wherein, one of the first direction and the second direction is a clockwise direction, and the other is a counterclockwise direction; Providing ultrasonic waves to the cleaning material comprises: After a preset time period after the start of the first time period, and in the second time period and the third time period, ultrasonic waves are provided to the cleaning material.

4. The cleaning method according to claim 3, characterized in that: The first rotation speed ranges from 50 rpm to 150 rpm; the second rotation speed ranges from 50 rpm to 150 rpm.

5. The cleaning method according to claim 3, characterized in that: The time range of the second time period is between 0.5s and 2s, and the time range of the third time period is between 0.5s and 2s.

6. The cleaning method according to claim 3, characterized in that: After accelerating the rotation speed of the wafer carrier from 0 to the second rotation speed along the second direction, rotating the wafer carrier along the second direction further includes: In a fourth time period, the wafer carrying device continues to rotate in the second direction at the second rotation speed; In a fifth time period, the rotation speed of the wafer carrying device rotating along the second direction is reduced from the second rotation speed to 0; Providing ultrasonic waves to the cleaning material also includes: In the fourth time period and the fifth time period, ultrasonic waves are provided to the cleaning substance.

7. The cleaning method according to claim 6, characterized in that: The first time period ranges from 5s to 15s, and the fourth time period ranges from 5s to 15s.

8. The cleaning method according to any one of claims 2 to 7, characterized in that: The wafer carrying device comprises a clamp and a chuck; And / or, the cleaning substance includes ultrapure water having a preset temperature.

9. The cleaning method according to claim 8, characterized in that: During the cleaning process, replenishing the cleaning material; and / or, The flow rate when replenishing the cleaning substance is between 500 ml / min and 2000 ml / min.

10. The cleaning method according to claim 2, characterized in that: After providing ultrasonic waves to the cleaning material to change the shape of the cleaning material to obtain a target state, and at least a portion of the cleaning material in the target state contacts the wafer carrier to clean the wafer carrier, the cleaning method further includes: A drying process is performed on the wafer carrier.

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