Display device and ambient light detection method thereof

Abstract

The embodiment of the invention provides a display device and an ambient light detection method thereof. The display device comprises a first substrate which comprises a display area and a frame area located outside the display area, the first substrate comprises a first substrate and a photosensitive thin film transistor located on the display side, facing the display device, of the first substrate, the photosensitive thin film transistor is located in the frame area, and the photosensitive thin film transistor comprises a first active layer, a first electrode and a second electrode; the first electrode and the second electrode are electrically connected with the first active layer, the first electrode is provided with a first voltage signal, and the first active layer can receive ambient light irradiation; and the first detection module is connected with the second electrode, and the first detection module is used for detecting the first leakage current generated by the second electrode and determining the ambient light color temperature and / or the ambient light intensity according to the first leakage current. The display device integrates an ambient light detection function, is beneficial to realizing lightening and thinning of a product, and reduces the cost.

Description

Technical Field

[0001] The present disclosure relates to the field of display technology, and in particular to a display device and a method for detecting ambient light thereof. Background Art

[0002] As the main human-computer interaction interface, flat panel display technology has been widely used in many fields such as life entertainment, car display, industrial control, etc. The human-computer interaction interface provides rich external information for reference by connecting external sensors, and can also output control signals through the flat panel display. It can be seen that the organic combination of flat panel display technology and sensors constitutes the key node of human-computer interaction. Flat panel displays mainly provide display and touch functions.

[0003] In the prior art, flat panel displays mainly rely on external sensors to obtain external information, which results in high costs, is not conducive to the thinness and lightness of the entire device, and affects the product experience. Summary of the invention

[0004] Embodiments of the present disclosure provide a display device and a method for detecting ambient light thereof to solve or alleviate one or more technical problems in the prior art.

[0005] As a first aspect of an embodiment of the present disclosure, an embodiment of the present disclosure provides a display device, the display device comprising:

[0006] A first substrate includes a display area and a frame area outside the display area. The first substrate includes a first substrate and a photosensitive thin film transistor located on a display side of the first substrate facing the display device. The photosensitive thin film transistor is located in the frame area. The photosensitive thin film transistor includes a first active layer, a first electrode and a second electrode. The first electrode and the second electrode are both electrically connected to the first active layer. The first electrode is provided with a first voltage signal. The first active layer can receive ambient light.

[0007] The first detection module is connected to the second electrode, and is used to detect a first leakage current generated by the second electrode and determine the ambient light color temperature and / or ambient light intensity according to the first leakage current.

[0008] In some embodiments, the display device also includes a reference thin film transistor arranged in the same layer as the photosensitive thin film transistor, and the display device also includes a light-shielding layer located on the display side of the reference thin film transistor facing the display device, the orthographic projection of the second active layer of the reference thin film transistor on the first substrate is located within the orthographic projection of the light-shielding layer on the first substrate, the third electrode of the reference thin film transistor is provided with a first voltage signal, the first detection module is also connected to the fourth electrode of the reference thin film transistor, and the first detection module is also used to detect a reference leakage current of the fourth electrode of the reference thin film transistor, and determine the ambient light color temperature and / or ambient light intensity based on the first leakage current and the reference leakage current.

[0009] In some embodiments, the display device further includes a color filter layer, the color filter layer includes a preset color filter, the preset color filter is located on a side of the photosensitive thin film transistor facing the ambient light, the orthographic projection of the first active layer of the photosensitive thin film transistor on the first substrate is located within the orthographic projection of the preset color filter on the first substrate, the photosensitive thin film transistor includes a first photosensitive thin film transistor, a second photosensitive thin film transistor and a third photosensitive thin film transistor, and the preset color filter includes a red color filter, a green color filter and a blue color filter;

[0010] The first detection module is connected to the second electrode of the first photosensitive thin film transistor, the second electrode of the second photosensitive thin film transistor and the second electrode of the third photosensitive thin film transistor respectively. The first detection module is used to detect three first leakage currents generated by the three second electrodes and determine the color temperature of the ambient light based on the three first leakage currents.

[0011] In some embodiments, the display device further includes a color filter layer, the color filter layer includes a preset color filter, the preset color filter is located on the side of the photosensitive thin film transistor facing the ambient light, the orthographic projection of the first active layer of the photosensitive thin film transistor on the first substrate is located within the orthographic projection of the preset color filter on the first substrate, and the preset color filter includes a green color filter;

[0012] The first detection module is used to detect a first leakage current of the second electrode of the photosensitive thin film transistor, and determine the ambient light intensity according to the first leakage current of the second electrode of the photosensitive thin film transistor.

[0013] In some embodiments, the border area includes a first border area and a second border area located on opposite sides of the display area, the first border area includes a fan-shaped routing area and a binding area, the fan-shaped routing area is located between the display area and the binding area, and the photosensitive thin film transistor is located in the second border area.

[0014] In some embodiments, the first substrate includes a first row of binding pins and a second row of binding pins located in the binding area, the first row of binding pins and the second row of binding pins are arranged in a direction from the fan-out wiring area toward the binding area, and the first row of binding pins is divided into a middle area and end areas located at both ends of the middle area;

[0015] The binding pins in the middle area are connected to the first metal routing in the fan-shaped routing area. The display device also includes a second metal routing arranged in the fan-shaped routing area and the binding area. A third metal routing is arranged between the first row of binding pins and the second row of binding pins. The binding pins in at least one end area are connected to one end of the third metal routing. The other end of the third metal routing extends in a direction away from the middle area and is connected to the second metal routing through a via. The first metal routing and the second metal routing are located on the same layer, and the third metal routing and the second metal routing are located on different layers.

[0016] In some embodiments, the first substrate further includes a functional unit, the functional unit is located in the second border area, a plurality of photosensitive thin film transistors are sequentially arranged along an extension direction of the second border area, and the functional unit is located between the photosensitive thin film transistor and the display area;

[0017] The display device also includes an ink layer located in the second frame area. The second frame area is provided with an ink avoidance area. The orthographic projection of the first active layer of the photosensitive thin film transistor on the first substrate is located within the orthographic projection of the ink avoidance area on the first substrate.

[0018] In some embodiments, the distance between the center of the photosensitive thin film transistor and the border of the display area close to the second frame area is 0.08 mm to 0.12 mm.

[0019] In some embodiments, the first substrate further includes a functional unit, the functional unit includes a touch control unit, a data control unit and an anti-static unit, and the anti-static unit is located on a side of the fan-shaped wiring area close to the display area;

[0020] The first substrate includes a first row of binding pins and a second row of binding pins located in a binding area. The first row of binding pins and the second row of binding pins are arranged in a direction from the fan-shaped routing area toward the binding area. The touch control unit and the data control unit are located between the first row of binding pins and the second row of binding pins.

[0021] In some embodiments, the photosensitive thin film transistor includes a plurality of sub-photosensitive thin film transistors, which are arranged in sequence along a first direction, the sub-photosensitive thin film transistors include a first sub-pole and a second sub-pole, the first pole includes a plurality of interconnected first sub-poles, the second pole includes a plurality of interconnected second sub-poles, the first active layer extends along the first direction, and the orthographic projections of the first sub-pole and the second sub-pole on the first substrate are both located within the orthographic projection of the first active layer on the first substrate.

[0022] In some embodiments, the display device also includes a light-shielding layer located on the display side of the display device facing the photosensitive thin film transistor, the light-shielding layer is provided with an opening, the orthographic projection of the opening on the first substrate is located within the orthographic projection of the first active layer on the first substrate, and the sub-photosensitive thin film transistor receives ambient light through the opening.

[0023] In some embodiments, the display device further includes a preset color filter located on the display side of the photosensitive thin film transistor facing the display device, and the orthographic projection of the opening on the first substrate is located within the orthographic projection of the preset color filter on the first substrate.

[0024] In some embodiments, the orthographic projection of the first active layer on the first substrate is located within the orthographic projection of the preset color filter on the first substrate, and the distance between the orthographic projection boundary of the first active layer on the first substrate and the orthographic projection boundary of the preset color filter on the first substrate is greater than or equal to 5 μm.

[0025] In some embodiments, the first sub-poles of two adjacent sub-photosensitive thin-film transistors are adjacent to each other, the opening extends along the first direction, each sub-photosensitive thin-film transistor receives ambient light through the opening, and the distance between the orthographic projection boundary of the opening on the first substrate and the orthographic projection boundary of the first active layer on the first substrate is greater than or equal to 10 μm.

[0026] In some embodiments, the number of openings is the same as the number of sub-photosensitive thin-film transistors, and the multiple openings are arranged at intervals along the first direction. The openings correspond to the sub-photosensitive thin-film transistors one-to-one, and the sub-photosensitive thin-film transistors receive ambient light through the corresponding openings. The ratio between the size of the opening in the first direction and the spacing between two adjacent openings is less than or equal to 0.5.

[0027] In some embodiments, the first substrate further includes a second thin film transistor located in the display area, and the photosensitive thin film transistor is disposed in the same layer as the second thin film transistor.

[0028] In some embodiments, the photosensitive thin film transistor may further include a first gate, the first gate is located between the first active layer and the first substrate, a gate insulating layer is provided between the first gate and the first active layer, the orthographic projection of the first active layer on the first substrate is located within the orthographic projection of the first gate on the first substrate, and a turn-off signal is applied to the first gate so that the first electrode and the second electrode of the photosensitive thin film transistor are disconnected when there is no ambient light irradiation;

[0029] The reference thin film transistor also includes a second gate, which is located between the second active layer and the first substrate, a gate insulating layer is arranged between the second gate and the second active layer, the orthographic projection of the second active layer on the first substrate is located within the orthographic projection of the second gate on the first substrate, and a shutdown signal is applied to the second gate so that the third pole and the fourth pole of the reference thin film transistor are disconnected when there is no ambient light.

[0030] As a second aspect of an embodiment of the present disclosure, an embodiment of the present disclosure provides a method for detecting ambient light of a display device, which is applied to the display device in the embodiment of the present disclosure, and the method includes:

[0031] Detecting a first leakage current of a second electrode of a photosensitive thin film transistor in a display device;

[0032] The color temperature of the ambient light and / or the intensity of the ambient light are determined according to the first leakage current.

[0033] In some embodiments, it also includes:

[0034] detecting a reference leakage current of a second electrode of a reference thin film transistor;

[0035] Determining the color temperature and / or intensity of the ambient light according to the first leakage current includes: determining the color temperature and / or intensity of the ambient light according to the first leakage current and a reference leakage current.

[0036] In some embodiments, the photosensitive thin film transistor includes a first photosensitive thin film transistor, a second photosensitive thin film transistor, and a third photosensitive thin film transistor;

[0037] Detecting a first leakage current of a second electrode of a photosensitive thin film transistor in a display device, comprising: respectively detecting three first leakage currents of a second electrode of a first photosensitive thin film transistor, a second electrode of a second photosensitive thin film transistor, and a second electrode of a third photosensitive thin film transistor;

[0038] Determining the ambient light color temperature according to the first leakage current includes: determining the ambient light color temperature from a leakage current-color temperature data table according to the three first leakage currents, wherein the leakage current-color temperature data table includes correspondences between the three first leakage currents and the color temperatures.

[0039] According to the technical solution of the disclosed embodiment, when the first active layer is irradiated by ambient light, the second electrode generates leakage current, and the first detection module detects the first leakage current of the second electrode. The color temperature and / or intensity of the ambient light can be determined based on the first leakage current. Such a display device integrates the ambient light detection function, and no longer needs to sense the ambient light through an external photosensor, thereby reducing the cost of the display device and facilitating the realization of a thin and light display device.

[0040] The above summary is for illustrative purposes only and is not intended to be limiting in any way. In addition to the illustrative aspects, embodiments and features described above, further aspects, embodiments and features of the present disclosure will be readily apparent by reference to the accompanying drawings and the following detailed description. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] In the accompanying drawings, unless otherwise specified, the same reference numerals throughout the multiple drawings represent the same or similar parts or elements. These drawings are not necessarily drawn to scale. It should be understood that these drawings only depict some embodiments according to the present disclosure and should not be regarded as limiting the scope of the present disclosure.

[0042] Figure 1 is a schematic plan view of a first substrate of a display device according to an embodiment of the present disclosure;

[0043] Figure 2 for Figure 1 BB cross-section diagram of the photosensitive thin film transistor;

[0044] Figure 3 for Figure 1 Schematic diagram of CC cross section of reference thin film transistor;

[0045] Figure 4 is a schematic plan view of a first substrate of a display device according to another embodiment of the present disclosure;

[0046] Figure 5 This is a schematic diagram of a planar structure showing the position of a photosensitive thin film transistor in a substrate according to an embodiment of the present disclosure;

[0047] Figure 6 It is a planar structural schematic diagram of the position of a photosensitive thin film transistor in a display device according to another embodiment of the present disclosure.

[0048] Description of reference numerals:

[0049] 100, photosensitive thin film transistor; 11, first substrate; 121, first gate; 122, second gate; 131, first active layer; 132, second active layer; 141, first electrode; 142, second electrode; 143, third electrode; 144, fourth electrode;

[0050] 200, reference thin film transistor; 21, light shielding layer; 211, opening; 221, preset color filter;

[0051] 31. First voltage signal line; 32. Shutdown voltage signal line; 33. First detection signal line; 34. First row of binding pins; 35. Second row of binding pins; 36. First metal trace; 37. Second metal trace; 38. Third metal trace; 39. Second detection signal line. DETAILED DESCRIPTION

[0052] In the following, only some exemplary embodiments are briefly described. As those skilled in the art will appreciate, the described embodiments may be modified in various ways without departing from the spirit or scope of the present disclosure, and different embodiments may be combined arbitrarily without conflict. Therefore, the drawings and descriptions are considered to be illustrative in nature and not restrictive.

[0053] Figure 1 is a schematic plan view of a first substrate of a display device according to an embodiment of the present disclosure, Figure 2 for Figure 1 BB cross-section diagram of the photosensitive thin film transistor in the middle. Figure 3 for Figure 1 The CC cross-sectional view of the reference thin film transistor is shown in FIG. The present disclosure provides a display device, which includes a first substrate and a first detection module. Figure 1 and Figure 2As shown, the first substrate includes a display area AA and a frame area outside the display area AA. The first substrate includes a first substrate 11 and a photosensitive thin film transistor 100 located on the display side of the first substrate 11 facing the display device, and the photosensitive thin film transistor 100 is located in the frame area. The photosensitive thin film transistor 100 includes a first active layer 131, a first electrode 141 and a second electrode 142, and the first electrode 141 and the second electrode 142 are both electrically connected to the first active layer 131. The first electrode 141 is provided with a first voltage signal, and the first active layer 131 can receive ambient light.

[0054] Exemplarily, the first active layer 131 may include a first conductive region and a second conductive region, the first pole 141 is connected to the first conductive region, and the second pole 142 is connected to the second conductive region, so that the first pole 141 and the second pole 142 are both electrically connected to the first active layer 131. At least the first active layer 131 between the first conductive region and the second conductive region can receive ambient light.

[0055] It should be noted that in the thin film transistor, the material of the first active layer 131 may include semiconductor material, and a patterned semiconductor layer may be formed by a patterning process. The first active layer 131 at least includes a semiconductor material located between the first electrode 141 and the second electrode 142 .

[0056] One of the first electrode 141 and the second electrode 142 may be a source electrode, and the other may be a drain electrode. For example, when the photosensitive thin film transistor 100 is a P-type transistor, the first electrode 141 may be a drain electrode, and the second electrode 142 may be a source electrode; when the photosensitive thin film transistor 100 is an N-type transistor, the first electrode 141 may be a source electrode, and the second electrode 142 may be a drain electrode.

[0057] The first substrate may further include a first voltage signal line 31, the first electrode 141 may be connected to the first voltage signal line 31, and the first voltage signal line 31 provides a first voltage signal to the first electrode 141. The specific voltage value of the first voltage signal may be set as required, as long as it is ensured that the first leakage current can be detected when the first active layer 131 receives ambient light.

[0058] The first detection module is connected to the second electrode 142 , and is used to detect a first leakage current generated by the second electrode 142 , and determine the ambient light color temperature and / or ambient light intensity according to the first leakage current.

[0059] The material of the first active layer 131 may include semiconductor material. When the first active layer 131 is irradiated by ambient light, the second electrode 142 generates a leakage current. There is a certain corresponding relationship between the leakage current and the color temperature and / or the intensity of the ambient light. Therefore, by detecting the first leakage current generated by the second electrode 142, the color temperature and / or the intensity of the ambient light can be determined based on the first leakage current.

[0060] In the display device of the embodiment of the present disclosure, when the first active layer 131 is irradiated by ambient light, the second electrode 142 generates a leakage current, and the first detection module detects the first leakage current of the second electrode 142. The color temperature and / or intensity of the ambient light can be determined based on the first leakage current. Such a display device integrates an ambient light detection function, and there is no need to sense the ambient light through an external photosensor, which reduces the cost of the display device and is conducive to achieving a lightweight effect for the display device.

[0061] In one embodiment, after determining the color temperature and / or intensity of the ambient light, the display device may display the color temperature and / or intensity of the ambient light to provide the user with ambient light information. The display device may also adjust the color temperature and / or intensity of the displayed image according to the color temperature and / or intensity of the ambient light, so that the user can better appreciate the displayed image under ambient light.

[0062] In one embodiment, the first substrate may further include a second thin film transistor located in the display area AA, and the photosensitive thin film transistor 100 is arranged in the same layer as the second thin film transistor. For example, the first active layer 131 of the photosensitive thin film transistor 100 is arranged in the same layer as the active layer of the second thin film transistor, and the source and drain of the photosensitive thin film transistor 100 are arranged in the same layer as the source and drain of the second thin film transistor. When the photosensitive thin film transistor 100 includes a gate, the gate of the photosensitive thin film transistor 100 can be arranged in the same layer as the gate of the second thin film transistor. With such a structure, the arrangement of the photosensitive thin film transistor 100 will not affect the process technology of the first substrate, and will not increase the cost of the first substrate.

[0063] It is understandable that, during the preparation of the first substrate, each first substrate may be different due to differences in the manufacturing process, which may affect the first leakage current and further affect the accuracy of the ambient light color temperature and / or ambient light intensity.

[0064] In order to improve the accuracy of the determined ambient light color temperature and / or ambient light intensity, the display device may further include a reference thin film transistor 200, such as Figure 1 and Figure 2, the reference thin film transistor 200 is arranged in the same layer as the photosensitive thin film transistor 100. The reference thin film transistor 200 includes a second active layer 132132, a third electrode 143 and a fourth electrode 144. The third electrode 143 and the fourth electrode 144 of the reference thin film transistor 200 are both connected to the second active layer 132, and the third electrode 143 of the reference thin film transistor 200 is provided with a first voltage signal. Here, the reference thin film transistor 200 is arranged in the same layer as the photosensitive thin film transistor 100, which should be understood as that each film layer of the reference thin film transistor 200 is arranged in the same layer as each film layer of the photosensitive thin film transistor 100. The second active layer 132 of the reference thin film transistor 200 is arranged in the same layer as the first active layer 131 of the photosensitive thin film transistor 100 and is formed simultaneously by the same process. The third electrode 143 and the fourth electrode 144 of the reference thin film transistor 200 are arranged in the same layer as the first electrode 141 and the second electrode 142 of the photosensitive thin film transistor 100 and are formed simultaneously by the same process. In the case where a gate exists, the gate of the reference thin film transistor 200 is disposed in the same layer as the gate of the photosensitive thin film transistor 100 and is formed simultaneously through the same process.

[0065] The display device may further include a light shielding layer 21, which is located in the frame region and on a side of the reference thin film transistor 200 facing the display side of the display device. Figure 2 As shown, the display side of the display device is the upper side of the first substrate, and the light shielding layer 21 is located on the upper side of the reference thin film transistor 200. The orthographic projection of the second active layer 132132 of the reference thin film transistor 200 on the first substrate 11 is located within the orthographic projection of the light shielding layer 21 on the first substrate 11, so that the light shielding layer 21 can shield the second active layer 132132 to prevent the second active layer 132132 from receiving ambient light.

[0066] The third electrode 143 of the reference thin film transistor 200 is provided with a first voltage signal, and the first detection module is also connected to the fourth electrode 144 of the reference thin film transistor 200. The first detection module is also used to detect a reference leakage current of the fourth electrode 144 of the reference thin film transistor 200, and determine the ambient light color temperature and / or ambient light intensity according to the first leakage current and the reference leakage current.

[0067] It is understandable that the process technology of the first substrate will affect the first leakage current generated by the photosensitive thin film transistor 100. In this embodiment, the first substrate is provided with a reference thin film transistor 200, and the reference thin film transistor 200 is provided on the same layer as the photosensitive thin film transistor 100. The first detection module can use the reference leakage current to correct the first leakage current to obtain the corrected first leakage current. The corrected first leakage current has eliminated the influence of the process technology on the leakage current. Therefore, the ambient light color temperature and / or ambient light intensity can be determined more accurately based on the corrected first leakage current, so that the influence of the process technology on the detection can be avoided, and the accuracy of the ambient light color temperature and / or ambient light intensity can be improved. The reference thin film transistor 200 can be located in the border area.

[0068] In one embodiment, the display device further includes a color filter layer, such as Figure 2 As shown, the color filter layer includes a preset color filter 221. The preset color filter 221 is located on the side of the photosensitive thin film transistor 100 facing the ambient light, and the orthographic projection of the first active layer 131 of the photosensitive thin film transistor 100 on the first substrate 11 is located within the orthographic projection of the preset color filter 221 on the first substrate 11. The photosensitive thin film transistor 100 includes a first photosensitive thin film transistor 101, a second photosensitive thin film transistor 102, and a third photosensitive thin film transistor 103, and the preset color filter 221 includes a red color filter, a green color filter, and a blue color filter. The first photosensitive thin film transistor 101, the second photosensitive thin film transistor 102, and the third photosensitive thin film transistor 103 correspond to the red color filter, the green color filter, and the blue color filter one by one.

[0069] For example, the orthographic projection of the first active layer 131 of the first photosensitive thin film transistor 101 on the first substrate 11 is located within the orthographic projection of the first color filter on the first substrate 11 , so that ambient light irradiates the first active layer 131 of the first photosensitive thin film transistor 101 through the first color filter.

[0070] For example, the orthographic projection of the first active layer 131 of the second photosensitive thin film transistor 102 on the first substrate 11 is located within the orthographic projection of the second color filter on the first substrate 11 , so that ambient light irradiates the first active layer 131 of the second photosensitive thin film transistor 102 through the second color filter.

[0071] For example, the orthographic projection of the first active layer 131 of the third photosensitive thin film transistor 103 on the first substrate 11 is located within the orthographic projection of the third color filter on the first substrate 11 , so that ambient light irradiates the first active layer 131 of the third photosensitive thin film transistor 103 through the third color filter.

[0072] The first detection module is respectively connected to the second electrode 142 of the first photosensitive thin film transistor 101, the second electrode 142 of the second photosensitive thin film transistor 102, and the second electrode 142 of the third photosensitive thin film transistor 103. The first detection module is used to detect three first leakage currents generated by the three second electrodes 142, and determine the ambient light color temperature according to the three first leakage currents.

[0073] The environment can generate light of a preset color after passing through the preset color filter 221. Using three color filters, three colors of light can be generated respectively. After each color of light is irradiated to the first active layer 131 of the corresponding photosensitive thin film transistor 100, the second electrode 142 of the photosensitive thin film transistor 100 can generate a corresponding first leakage current. The first detection module can determine the color temperature of the ambient light based on the three first leakage currents.

[0074] Exemplarily, a leakage current-color temperature data table may be pre-stored in the display device, and the leakage current-color temperature data table includes the correspondence between three first leakage currents and color temperatures. After the first detection module detects the three first leakage currents, the leakage current-color temperature data table may be queried to obtain the ambient light color temperature value.

[0075] For example, the three first leakage currents are a, b, and c, respectively, and there is a corresponding relationship between {a, b, c} and the color temperature value. After obtaining {a, b, c}, the leakage current-color temperature data table can be queried to obtain the ambient light color temperature value.

[0076] The leakage current-color temperature data table can be obtained by relevant personnel through experiments in advance. For example, during product testing, the ambient light color temperature can be tested by professional equipment, and then three first leakage currents {a, b, c} can be detected on the product, and the corresponding relationship between the three first leakage currents {a, b, c} and the ambient light color temperature can be established to establish a leakage current-color temperature data table. The leakage current-color temperature data table can also be provided by a professional organization.

[0077] In one embodiment, the first color filter may include a red color filter; the second color filter may include a green color filter; and the third color filter may include a blue color filter. It is understandable that in the color temperature comparison table, there is a corresponding relationship between the color temperature value and the color, and various colors can be obtained by combining red, green, and blue. Therefore, the color corresponding to each color temperature value can be split into a combination of red, green, and blue in different proportions. Correspondingly, each color corresponding to each color temperature value has a corresponding red first leakage current, green first leakage current, and blue first leakage current. Therefore, by setting the first color filter to include a red color filter, the second color filter to include a green color filter, and the third color filter to include a blue color filter, the color temperature of the ambient light can be detected more accurately.

[0078] Exemplarily, the first detection module can use the reference leakage current of the reference thin film transistor 200 to calibrate the first leakage current of the first photosensitive thin film transistor 101, the first leakage current of the second photosensitive thin film transistor 102, and the first leakage current of the third photosensitive thin film transistor 103, respectively, to obtain the corresponding corrected first leakage currents. The first detection module can determine the ambient light color temperature based on the three corrected first leakage currents. The ambient light color temperature obtained in this way can avoid the influence of the process technology on the detection and improve the accuracy of the determined ambient light color temperature.

[0079] In one embodiment, the preset color filter 221 includes a green color filter. The first detection module is connected to the second electrode 142 of the photosensitive thin film transistor 100, and the first detection module is used to detect the first leakage current of the second electrode 142 of the photosensitive thin film transistor 100, and determine the ambient light intensity according to the first leakage current of the second electrode 142 of the photosensitive thin film transistor 100.

[0080] The green color film has a high light transmittance and is more sensitive to ambient light. Therefore, the use of the green color film is more conducive to detecting the first leakage current of the photosensitive thin film transistor 100 and improving the accuracy of the ambient light intensity structure.

[0081] Exemplarily, the first leakage current of the photosensitive thin film transistor 100 can be corrected by using the reference leakage current of the reference thin film transistor 200 to obtain the corrected first leakage current. The first detection module can determine the ambient light intensity according to the corrected first leakage current of the photosensitive thin film transistor 100. The ambient light intensity obtained in this way can avoid the influence of the process technology on the detection and improve the accuracy of the determined ambient light intensity.

[0082] When performing ambient light intensity detection, the preset color filter 221 is not limited to a green color filter, and the preset color filter 221 can also be a red color filter or a blue color filter.

[0083] like Figure 1 As shown, the frame area may include a first frame area B1 and a second frame area B2, and the first frame area B1 and the second frame area B2 are located on opposite sides of the display area AA. Figure 1 In the embodiment, the first frame area B1 and the second frame area B2 are located at the upper and lower sides of the display area AA, the first frame area B1 is located at the lower side of the display area AA, and the second frame area B2 is located at the upper side of the display area AA. The first frame area B1 includes a fan-shaped routing area B11 and a binding area B12. The fan-shaped routing area B11 is located between the display area AA and the binding area B12. The photosensitive thin film transistor 100 can be located in the second frame area B2. The reference thin film transistor 200 can be located in the second frame area B2.

[0084] The binding area B12 is provided with binding pins for binding electronic components, and the signal lines of the display area AA are connected to the binding pins of the binding area B12 through the fan-shaped routing of the fan-shaped routing area B11.

[0085] like Figure 1 As shown, the first substrate includes a first row of binding pins 34 and a second row of binding pins 35 located in the binding area B12, and the first row of binding pins 34 and the second row of binding pins 35 are used to bind and connect with electronic components such as integrated circuit chips. The arrangement direction of multiple binding pins in the first row of binding pins 34 and the second row of binding pins 35 is the same as the extension direction of the first border area B1. Figure 1 In the embodiment, the extension direction of the first border area B1 is the horizontal direction.

[0086] The first row of binding pins 34 and the second row of binding pins 35 are arranged in a direction from the fan-out wiring area B11 toward the binding area B12. Figure 1 In the embodiment, the first row of binding pins 34 and the second row of binding pins 35 are arranged in a vertical direction. There is a gap between the first row of binding pins 34 and the second row of binding pins 35. For example, the first row of binding pins 34 may be output pins, and the second row of binding pins 35 may be input pins.

[0087] The first row of binding pins 34 can be divided into a middle area M and end areas located at both ends of the middle area (for example, a left end area LE and a right end area RE). The middle area M includes at least one binding pin, and the end area E includes at least one binding pin. The fan-shaped routing area B11 can be provided with a first metal routing 36, the binding pins of the middle area M are connected to the first metal routing 36, the upper end of the first metal routing 36 is connected to the signal line of the display area AA, and the lower end of the first metal routing 36 is connected to the first row of binding pins 34 in the middle area M. The first metal routing 36 is a continuous metal routing arranged in the same layer. For example Figure 1 In the embodiment, the first metal trace 36 may include a first line segment, a second line segment and a third line segment connected to each other, wherein the first line segment, the second line segment and the third line segment are continuous metal traces arranged in the same layer. The first line segment and the third line segment both extend in a vertical direction, and the second line segment extends in an inclined direction.

[0088] like Figure 1As shown, the display device also includes a second metal routing 37, and the second metal routing 37 is located in the fan-shaped routing area B11 and the binding area B12. The second metal routing 37 includes a fourth line segment, a fifth line segment and a sixth line segment connected to each other, and the fourth line segment, the fifth line segment and the sixth line segment are continuous metal routings arranged in the same layer. The fourth line segment and the sixth line segment both extend in a vertical direction, and the fifth line segment extends in an inclined direction. The fourth line segment and the fifth line segment are both located in the fan-shaped routing area B11, and the sixth line segment extends from the fan-shaped routing area B11 to the binding area B12. The second metal routing 37 and the first metal routing 36 are located in the same layer.

[0089] like Figure 1 As shown, the binding area B12 is provided with a third metal trace 38 located between the first row of binding pins 34 and the second row of binding pins 35, and the binding pin of at least one end area is connected to one end of the third metal trace 38. The other end of the third metal trace 38 extends in a direction away from the middle area and is connected to the second metal trace 37 through the via K. For example, Figure 1 In the figure, the third metal trace 38 includes a seventh line segment and an eighth line segment connected to each other, the seventh line segment is in a vertical direction, and the eighth line segment is in a horizontal direction. The upper end of the seventh line segment is connected to the binding pin of the end area, the end of the eighth line segment away from the fourth line segment is the other end of the third metal trace 38, the end of the eighth line segment away from the seventh line segment extends in a direction away from the middle area M, and is connected to the second metal trace 37 through a via K. The end of the eighth line segment away from the seventh line segment is connected to the lower end of the sixth line segment through a via K, and the third metal trace 38 and the second metal trace 37 are located in different layers.

[0090] In the related art, the second metal routing 37 is located in the fan-shaped routing area B11. In order to set the second metal routing 37 in the fan-shaped routing area B11, it is necessary to increase the width of the fan-shaped routing area B11. In the embodiment of the present disclosure, the fourth segment and the fifth segment of the second metal routing 37 are set in the fan-shaped routing area B11, and the sixth segment is extended from the fan-shaped routing area B11 to the binding area B12, and the binding pin of the end area is connected to the lower end of the sixth segment through the third metal routing 38 through the via K. In this way, the space occupied by the sixth segment in the second metal routing 37 in the fan-shaped routing area B11 can be reduced, which is conducive to reducing the width of the fan-shaped routing area B11, and then reducing the width of the first border area B1 of the display device, that is, reducing the width of the lower border of the display device, which is conducive to realizing a narrow border design.

[0091] like Figure 1As shown, the two end areas at both ends of the middle area can be respectively called the left end area LE and the right end area RE, and the connection mode of the left end area LE can be symmetrical with the connection mode of the right end area RE. For example, the third metal trace 38 includes a left third metal trace 38 located on the left side and a right third metal trace 38 located on the right side, and the second metal trace 37 includes a left second metal trace 37 located on the left side of the first metal trace 36 and a right second metal trace 37 located on the right side of the first metal trace 36. The binding pin of the left end area LE is connected to one end of the left third metal trace 38, and the other end of the left third metal trace 38 extends toward the left direction away from the middle area and is connected to the left second metal trace 37 through the via K. The binding pin of the right end area is connected to one end of the right third metal trace 38, and the other end of the right third metal trace 38 extends toward the right direction away from the middle area and is connected to the right second metal trace 37 through the via K.

[0092] It should be noted that the number of binding pins in the left end area and the number of binding pins in the right end area can be set as needed, and the number of binding pins in the left end area and the number of binding pins in the right end area can be the same or different.

[0093] The binding area B12 can be bound and connected to a plurality of electronic components such as integrated circuit chips, for example, Figure 1 The display device is shown to be connected to two integrated circuit chips, so that the binding area B12 is provided with two groups of first-row binding pins 34 and second-row binding pins 35, and the connection method of the two groups of binding pins to the display area AA signal line can be the same. In the related art, when the pins in the first row of binding pins 34 are all connected to the display area AA signal line through the metal wiring of the fan-shaped wiring area B11, some functional units in the display device, such as the touch control unit (Tx Switch Unit) and the data control unit (SourceSwitch Unit), are located between the first row of binding pins 34 and the second row of binding pins 35 in the binding area B12.

[0094] In the present disclosure, Figure 1 As shown, the first substrate also includes a functional unit, and the functional unit is located in the second frame area B2, i.e., the upper frame. The photosensitive thin film transistor 100 is located in the second frame area B2, and is located on the side of the functional unit away from the display area AA. When the number of the photosensitive thin film transistors 100 is multiple, i.e., two or more, the multiple photosensitive thin film transistors 100 are arranged in sequence along the extension direction of the second frame area B2, and the functional unit is located between the photosensitive thin film transistor 100 and the display area AA.

[0095] Exemplarily, the photosensitive thin film transistor 100 and the reference thin film transistor 200 are sequentially arranged along the extension direction of the second border area B2, for example, Figure 1In the embodiment, the first photosensitive thin film transistor 101, the second photosensitive thin film transistor 102, the third photosensitive thin film transistor 103 and the reference thin film transistor 200 are sequentially arranged along the horizontal direction.

[0096] For example, the functional unit includes a touch control unit (Tx Switch Unit), a data control unit (SourceSwitch Unit) and an anti-static unit (ESD Unit), such as Figure 1 As shown, the antistatic unit, the data control unit and the touch control unit are arranged in sequence in the second frame area B2 in a direction away from the display area AA, and the photosensitive thin film transistor 100 and the reference thin film transistor 200 are located on the side of the touch control unit away from the display area AA. The distance d1 between the center of the photosensitive thin film transistor 100 and the reference thin film transistor 200 and the boundary of the display area AA close to the second frame area B2 (i.e., the upper boundary of the display area AA) is about 0.47 mm.

[0097] The display device further includes an ink layer located in the second frame area B2. The second frame area B2 is provided with an ink avoidance area 300. Figure 1 The boundary line of the ink avoidance area 300 is shown in FIG. The orthographic projection of the first active layer 131 of the photosensitive thin film transistor 100 on the first substrate 11 is located within the orthographic projection of the ink avoidance area 300 on the first substrate 11 .

[0098] Typically, the display device includes a cover plate that is buckled with the first substrate, and an ink layer is typically disposed between the first substrate and the cover plate, wherein the outer boundary of the ink layer is along the edge of the first substrate, and the inner boundary of the ink layer is typically about 0.4 mm away from the upper boundary of the display area AA. In order to prevent the ink layer from covering the photosensitive thin film transistor 100 and affecting the photosensitive thin film transistor 100 from receiving ambient light, the embodiment of the present disclosure is provided with an ink avoidance area 300 in the second border area B2, and the orthographic projection of the first active layer 131 of the photosensitive thin film transistor 100 on the first substrate 11 is located within the orthographic projection of the ink avoidance area 300 on the first substrate 11, so that the first active layer 131 of the photosensitive thin film transistor 100 can avoid the ink, and prevent the ink from affecting the first active layer 131 from receiving ambient light.

[0099] Figure 4 FIG. 1 is a plan view of a first substrate of a display device according to another embodiment of the present disclosure. In another embodiment, Figure 4 As shown, the photosensitive thin film transistor 100 and the reference thin film transistor 200 are located in the second border area B2 (i.e., the upper border area). The photosensitive thin film transistor 100 and the reference thin film transistor 200 are arranged in sequence along the extension direction of the second border area B2. Figure 3In the embodiment, the first photosensitive thin film transistor 101, the second photosensitive thin film transistor 102, the third photosensitive thin film transistor 103 and the reference thin film transistor 200 are arranged in sequence in the horizontal direction. The distance d2 between the center of the photosensitive thin film transistor 100 and the reference thin film transistor 200 and the boundary of the display area AA close to the second frame area B2 (i.e., the upper boundary of the display area AA) is 0.08 mm to 0.12 mm. Exemplarily, d2 can be 0.1 mm, at which time, the photosensitive thin film transistor 100 and the reference thin film transistor 200 can avoid the ink layer.

[0100] like Figure 4 As shown, the first substrate may further include a functional unit, the functional unit including a touch control unit, a data control unit and an anti-static unit. The anti-static unit may be located in the fan-shaped wiring area B11 near the display area AA. Figure 4 In the embodiment, the anti-static unit is located in the fan-shaped wiring area B11 and is arranged close to the display area AA.

[0101] like Figure 4 As shown, the first substrate includes a first row of binding pins 34 and a second row of binding pins 35 located in the binding area B12, and the first row of binding pins 34 and the second row of binding pins 35 are used to bind and connect with electronic components such as integrated circuit chips. The arrangement direction of multiple binding pins in the first row of binding pins 34 and the second row of binding pins 35 is the same as the extension direction of the first border area B1. Figure 4 In the embodiment, the extension direction of the first border area B1 is the horizontal direction.

[0102] The first row of binding pins 34 and the second row of binding pins 35 are arranged in a direction from the fan-out wiring area B11 toward the binding area B12. Figure 4 In the embodiment, the first row of binding pins 34 and the second row of binding pins 35 are arranged in a vertical direction. There is a gap between the first row of binding pins 34 and the second row of binding pins 35. For example, the first row of binding pins 34 may be output pins, and the second row of binding pins 35 may be input pins.

[0103] Exemplarily, the touch control unit and the data control unit may be located in the binding area B12 and between the first row of binding pins 34 and the second row of binding pins 35. The first row of binding pins 34 are connected to the signal lines of the display area AA through the fan-shaped metal traces located in the fan-shaped trace area B11.

[0104] exist Figure 4 In the embodiment, the first row of binding pins 34 are connected to the signal line of the display area AA through a fan-shaped metal trace, such as the first metal trace 36. Therefore, the fan-shaped trace area B11 needs to have a sufficient width so that all the pins in the first row of binding pins 34 can be connected to the signal line of the display area AA through the fan-shaped metal trace. Figure 4 In the embodiment, the width of the fan-shaped routing area B11 is greater than Figure 1 The width of the fan-out area B11 in the embodiment, and thus, Figure 4 In the embodiment shown, the width of the first border area B1 (lower border area) is greater than Figure 1 The width of the first border area B1 (lower border area) in the illustrated embodiment.

[0105] Figure 5 This is a schematic plan view showing the position of a photosensitive thin film transistor in a substrate according to an embodiment of the present disclosure. Figure 5 The BB cross-section diagram can be referred to Figure 2 ; Figure 6 FIG. 1 is a planar structural diagram of the position of a photosensitive thin film transistor in a display device according to another embodiment of the present disclosure. The photosensitive thin film transistor 100 may include a plurality of sub-photosensitive thin film transistors 110, and the plurality of sub-photosensitive thin film transistors 110 are arranged in sequence along a first direction. The first direction may be an extension direction of the border area, for example, Figure 1 and Figure 4 In the embodiment, the photosensitive thin film transistor 100 is located in the second border area B2 , the extension direction of the second border area B2 is the horizontal direction, and the plurality of sub-photosensitive thin film transistors 110 may be arranged in sequence along the horizontal direction. Figure 5 and Figure 6 One of the sub-photosensitive thin film transistors 110 is shown in FIG.

[0106] like Figure 5 and Figure 6 As shown, the sub-photosensitive thin film transistor 110 may include a first sub-pole 1410 and a second sub-pole 1420, the first pole 141 includes a plurality of first sub-poles 1410 connected to each other, and the second pole 142 may include a plurality of second sub-poles 1420 connected to each other. The first active layer 131 extends along a first direction, and the orthographic projections of the first sub-pole 1410 and the second sub-pole 1420 on the first substrate 11 are both located within the orthographic projection of the first active layer 131 on the first substrate 11.

[0107] For example, in Figure 5 In the embodiment, the photosensitive thin film transistor 100 includes 8 sub-photosensitive thin film transistors, the first sub-electrodes of the 8 sub-photosensitive thin film transistors are connected to form a first electrode 141 of the photosensitive thin film transistor 100, and the second sub-electrodes of the 8 sub-photosensitive thin film transistors are connected to form a second electrode 142 of the photosensitive thin film transistor 100. Figure 6 In the figure, the photosensitive thin film transistor 100 includes four sub-photosensitive thin film transistors, the first sub-poles of the four sub-photosensitive thin film transistors are connected to each other to form a first pole 141 of the photosensitive thin film transistor 100, and the second sub-poles of the four sub-photosensitive thin film transistors are connected to each other to form a second pole 142 of the photosensitive thin film transistor 100.

[0108] The display device further includes a light shielding layer 21 located on the side of the light-sensitive thin film transistor 100 facing the display device. The light shielding layer 21 is provided with an opening 211. Figure 5 and Figure 6 The boundary of the opening 211 is shown in FIG. The orthographic projection of the opening 211 on the first substrate 11 is located within the orthographic projection of the first active layer 131 on the first substrate 11, and the first active layer of the sub-photosensitive thin film transistor receives ambient light through the opening 211. At least part of the first sub-pole and the second sub-pole of each sub-photosensitive thin film transistor is located within the opening 211, so that when the first active layer 131 receives ambient light through the opening, each sub-photosensitive thin film transistor can generate an induced leakage current, and the photosensitive thin film transistor 100 is equivalent to a plurality of sub-photosensitive thin film transistors connected in parallel, which will greatly increase the value of the first leakage current and facilitate the detection of the first leakage current.

[0109] It should be noted that the area of ​​the first active layer 131 exposed by the opening 211 can be a channel area. When the first active layer 131 receives ambient light through the opening 211, the channel area can generate current, so that the second electrode 142 of the photosensitive thin film transistor 100 can generate a first leakage current.

[0110] In one embodiment, Figure 5 As shown, the first sub-electrodes of two adjacent sub-photosensitive thin film transistors are close to each other, and the opening 211 extends along the first direction. Here, the first sub-electrodes of two adjacent sub-photosensitive thin film transistors are close to each other, which can be understood as the orthographic projections of the first sub-electrodes of the two adjacent sub-photosensitive thin film transistors on the first substrate 11 have an overlapping area. For example, Figure 5 In the figure, the orthographic projections of the first sub-electrode 1410a of the sub-photosensitive thin film transistor and the first sub-electrode 1410b of the sub-photosensitive thin film transistor on the first substrate 11 have an overlapping area.

[0111] exist Figure 5 In the embodiment, each sub-photosensitive thin film transistor receives ambient light through the opening 211. The distance w1 between the orthographic projection boundary of the opening 211 on the first substrate 11 and the orthographic projection boundary of the first active layer 131 on the first substrate 11 is greater than or equal to 10 μm. In other words, one photosensitive thin film transistor 100 corresponds to one opening 211, and each sub-photosensitive thin film transistor in the photosensitive thin film transistor 100 receives ambient light through the same opening.

[0112] In another embodiment, Figure 6As shown, the number of openings 211 is the same as the number of sub-photosensitive thin film transistors. A plurality of openings 211 are arranged at intervals along the first direction, and the openings 211 correspond to the sub-photosensitive thin film transistors one by one, and the sub-photosensitive thin film transistors receive ambient light through the corresponding openings 211. The ratio of the size w2 of the opening 211 in the first direction to the spacing w3 between two adjacent openings 211 is less than or equal to 0.5. In this way, the first sub-poles of two adjacent sub-photosensitive thin film transistors are spaced a certain distance apart and are not in contact with each other.

[0113] Figure 5 In the embodiment shown, the first sub-electrodes of two adjacent sub-photosensitive thin film transistors are adjacent to each other. Figure 6 In the embodiment shown, the first sub-electrodes of two adjacent sub-photosensitive thin film transistors are spaced a certain distance apart. Under the condition of having the same performance, Figure 5 The photosensitive thin film transistor 100 in the illustrated embodiment occupies less space in the first direction. Figure 5 In the embodiment, the opening 211 is relatively large, and the risk of the light-sensitive thin film transistor being exposed through the opening is relatively high. Figure 6 The light-sensitive thin film transistor 100 of the embodiment has a small opening 211, which greatly reduces the visual risk, but the light-sensitive thin film transistor 100 occupies a large space in the first direction. Figure 6 In an embodiment, the ratio of the dimension w2 of the opening 211 in the first direction to the spacing w3 between two adjacent openings is less than or equal to 0.5, thereby ensuring that the dimension of the opening 211 in the first direction is smaller than the dimension of the light shielding layer 21 between the two openings 211, further reducing the visible risk of exposure of the photosensitive thin film transistor through the opening.

[0114] In one embodiment, Figure 5 and Figure 6 As shown, the display device may further include a preset color filter 221 located on the display side of the photosensitive thin film transistor 100 facing the display device, and the orthographic projection of the opening 211 on the first substrate 11 is located within the orthographic projection of the preset color filter 221 on the first substrate 11. With such a structure, the ambient light passes through the preset color filter 221 and irradiates the photosensitive thin film transistor 100, and the photosensitive thin film transistor 100 can generate a first leakage current corresponding to the preset color light, and detect the light intensity of the preset color light in the ambient light. Exemplarily, the preset color filter 221 may include a first color filter, a second color filter, or a third color filter. The first color filter, the second color filter, and the third color filter may be a red filter, a green filter, and a blue filter, respectively.

[0115] like Figure 5 and Figure 6As shown, the orthographic projection of the first active layer 131 on the first substrate 11 is located within the orthographic projection of the preset color filter 221 on the first substrate 11. The distance w4 between the orthographic projection boundary of the first active layer 131 on the first substrate 11 and the orthographic projection boundary of the preset color filter 221 on the first substrate 11 is greater than or equal to 5 μm. This arrangement can ensure that the ambient light entering the opening 211 passes through the preset color filter 221, preventing non-preset color light from entering the opening and affecting the detection accuracy.

[0116] Exemplarily, a distance w1 between an orthographic projection boundary of the opening 211 on the first substrate 11 and an orthographic projection boundary of the first active layer 131 on the first substrate 11 is greater than or equal to 10 μm, and a distance w4 between an orthographic projection boundary of the first active layer 131 on the first substrate 11 and an orthographic projection boundary of the preset color film 221 on the first substrate 11 is greater than or equal to 5 μm.

[0117] In one embodiment, the color filter layer may be a film layer disposed on the first substrate. For example, the first substrate may be an organic light emitting diode (OLED) substrate. The first substrate further includes an organic light emitting diode (OLED) device located on the side of the photosensitive thin film transistor 100 away from the first substrate 11 and located in the display area AA, and an encapsulation layer 15 located on the side of the OLED device away from the first substrate 11, such as Figure 2 and Figure 3 As shown, the color filter layer (eg, the color filter 221 of a preset color) may be located on a side of the encapsulation layer 15 facing away from the first substrate 11 .

[0118] The shading layer 21 can be a film layer arranged on the first substrate. For example, the shading layer 21 can be located between the encapsulation layer 15 and the color filter layer (for example, the preset color filter 221), or the shading layer 21 is located on the side of the color filter layer (for example, the preset color filter 221) away from the first substrate 11.

[0119] In one embodiment, the display device may further include a second substrate, which may be a color filter substrate. The second substrate is arranged in a box with the first substrate. The second substrate may include a second substrate, a light shielding layer 21 and a color filter layer arranged on the side of the second substrate facing the first substrate. Exemplarily, the light shielding layer 21 is located on the side of the second substrate facing the first substrate, and the color filter layer is located on the side of the light shielding layer 21 facing the first substrate.

[0120] The color filter layer may further include a display color filter located in the display area AA, so that the preset color color filter 221 corresponding to the photosensitive thin film transistor 100 is arranged in the same layer as the display color filter in the display area AA, which will not affect the manufacturing process of the display device.

[0121] The display device may further include a black matrix located in the display area AA and between two adjacent sub-pixels. The light shielding layer 21 may be disposed in the same layer as the black matrix. Thus, the disposition of the light shielding layer 21 will not affect the manufacturing process of the display device.

[0122] In one embodiment, the first substrate may further include a second thin film transistor located in the display area AA, and the photosensitive thin film transistor 100 and the second thin film transistor may be arranged in the same layer. That is, the first active layer 131 of the photosensitive thin film transistor 100 may be arranged in the same layer as the active layer of the second thin film transistor, and the source and drain of the photosensitive thin film transistor 100 may be arranged in the same layer as the source and drain of the second thin film transistor. Thus, the arrangement of the photosensitive thin film transistor 100 in the border area will not affect the process technology of the first substrate. Exemplarily, the reference thin film transistor 200 and the second thin film transistor may be arranged in the same layer.

[0123] In one embodiment, Figure 2 As shown, the photosensitive thin film transistor 100 may further include a first gate 121, and the first gate 121 may be located between the first active layer 131 and the first substrate 11. The orthographic projection of the first active layer 131 on the first substrate 11 is located within the orthographic projection of the first gate 121 on the first substrate 11. The material of the first gate 121 may be an opaque metal. With such a structure, the first gate 121 may block the light from the back side of the display device from irradiating the first active layer 131, which may prevent the back side light from affecting the first leakage current, and further improve the accuracy of the detection.

[0124] The reference thin film transistor 200 may further include a second gate 122, and the second gate 122 may be located between the second active layer 132 and the first substrate 11. The orthographic projection of the second active layer 132 on the first substrate 11 is located within the orthographic projection of the second gate 122 on the first substrate 11. The material of the second gate 122 may be an opaque metal. With such a structure, the second gate 122 may block the light from the back side of the display device from irradiating the second active layer 132, thereby preventing the back side light from affecting the reference leakage current, and ensuring the comparative performance of the reference thin film transistor 200.

[0125] The first gate electrode 121 and the second gate electrode 122 may be disposed in the same layer. In order to reduce the influence of the first substrate manufacturing process on the performance of the photosensitive thin film transistor, the structure of the reference thin film transistor 200 and the photosensitive thin film transistor 100 may be the same.

[0126] In one embodiment, in order to further ensure the performance of the photosensitive thin film transistor 100, a shutdown signal may be applied to the first gate 121 to disconnect the first electrode 141 and the second electrode 142 when there is no ambient light. For example, when the photosensitive thin film transistor 100 adopts PMOS, a high-level signal may be applied to the first gate 121 to ensure that the first electrode 141 and the second electrode 142 of the photosensitive thin film transistor 100 are completely disconnected when there is no ambient light; when the photosensitive thin film transistor 100 adopts NMOS, a low-level signal may be applied to the first gate 121 to ensure that the first electrode 141 and the second electrode 142 of the photosensitive thin film transistor 100 are completely disconnected when there is no ambient light.

[0127] A shutdown signal may be applied to the second gate 122 to disconnect the third electrode 143 and the fourth electrode 144 when there is no ambient light. For example, when the reference thin film transistor 200 is a PMOS, a high-level signal may be applied to the second gate 122 to ensure that the third electrode 143 and the fourth electrode 144 of the reference thin film transistor 200 are completely disconnected when there is no ambient light; when the reference thin film transistor 200 is an NMOS, a low-level signal may be applied to the second gate 122 to ensure that the third electrode 143 and the fourth electrode 144 of the reference thin film transistor 200 are completely disconnected when there is no ambient light.

[0128] For example, Figure 1 and Figure 2 As shown, the first electrode 141 of the photosensitive thin film transistor 100 and the third electrode 143 of the reference thin film transistor 200 can be connected to the first voltage signal line 31, and the first voltage signal line 31 is connected to the first pin of the binding area B12, and the first voltage signal can be provided to the first voltage signal line 31 through the first pin. Figure 1 and Figure 4 In the embodiment, the first electrodes of the first photosensitive thin film transistor 101 and the second photosensitive thin film transistor 102 are connected to the first voltage signal line 31a; the first electrode of the third photosensitive thin film transistor 103 and the third electrode of the reference thin film transistor 200 are connected to the first voltage signal line 31b.

[0129] The second electrode 142 of the photosensitive thin film transistor 100 can be connected to the corresponding first detection signal line, and the first detection signal line can be connected to the second pin of the binding area B12. The first detection module can be connected to the second pin, and the first detection module detects the first leakage current through the second pin. Figure 1 and Figure 4 In the embodiment, the second electrode of each photosensitive thin film transistor is connected to a first detection signal line 33 .

[0130] The fourth electrode 144 of the reference thin film transistor 200 can be connected to the corresponding second detection signal line 39, and the second detection signal line 39 can be connected to the third pin of the binding area B12. The first detection module can be connected to the third pin, and the first detection module detects the reference leakage current through the third pin.

[0131] The photosensitive thin film transistor 100 and the reference thin film transistor 200 are thin film transistors of the same type, so that the first gate 121 and the second gate 122 can be connected to the off voltage signal line 32, and the off voltage signal line 32 is connected to the fourth pin of the binding area B12, and the off voltage can be provided to the off voltage signal line through the fourth pin, thereby providing the off voltage to the first gate 121 and the second gate 122. Figure 1 and Figure 4 In the embodiment, the first gates of the first photosensitive thin film transistor 101 and the second photosensitive thin film transistor 102 are connected to the off voltage signal line 32a; the first gate of the third photosensitive thin film transistor 103 and the second gate of the reference thin film transistor 200 are connected to the off voltage signal line 32b.

[0132] The second row of binding pins 35 includes a first pin, a second pin, a third pin or a fourth pin.

[0133] It should be noted that, in the first substrate, an insulating layer needs to be provided between two adjacent conductive layers. Figure 2 and Figure 3 In the embodiment, a gate insulating layer is disposed between the first gate 121 and the first active layer 131 , and a gate insulating layer is disposed between the second gate 122 and the second active layer 132 .

[0134] The embodiment of the present disclosure further provides a method for detecting ambient light of a display device, which is applied to the display device in any embodiment of the present disclosure. The method for detecting ambient light of a display device may include steps S11 to S12.

[0135] Step S11 , detecting a first leakage current of the second electrode 142 of the photosensitive thin film transistor 100 in the display device.

[0136] Step S12: determining the ambient light color temperature and / or ambient light intensity according to the first leakage current.

[0137] In one embodiment, the method for detecting ambient light may further include: step S13 , detecting a reference leakage current of the second electrode 142 of the reference thin film transistor 200 .

[0138] Determining the color temperature and / or the intensity of the ambient light according to the first leakage current may include: determining the color temperature and / or the intensity of the ambient light according to the first leakage current and a reference leakage current.

[0139] In one embodiment, the photosensitive thin film transistor 100 includes a first photosensitive thin film transistor, a second photosensitive thin film transistor, and a third photosensitive thin film transistor.

[0140] Detecting the first leakage current of the second electrode 142 of the photosensitive thin film transistor 100 in the display device may include: respectively detecting three first leakage currents of the second electrode of the first photosensitive thin film transistor, the second electrode of the second photosensitive thin film transistor, and the second electrode of the third photosensitive thin film transistor.

[0141] Determining the ambient light color temperature according to the first leakage current includes: determining the ambient light color temperature from a leakage current-color temperature data table according to the three first leakage currents, wherein the leakage current-color temperature data table includes correspondences between the three first leakage currents and the color temperatures.

[0142] In an exemplary embodiment, the gate, source, drain, and metal wiring can be made of metal materials, such as any one or more of silver (Ag), copper (Cu), aluminum (Al), titanium (Ti), and molybdenum (Mo), or alloy materials of the above metals, such as aluminum-neodymium alloy (AlNd) or molybdenum-niobium alloy (MoNb), and can be a single-layer structure, or a multi-layer composite structure, such as Ti / Al / Ti, etc.

[0143] The display device may be any product or component with a display function, such as a mobile phone, a tablet computer, a television, a monitor, a laptop computer, a digital photo frame, a navigator, or the like.

[0144] In the description of this specification, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present disclosure and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present disclosure.

[0145] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the present disclosure, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0146] In the present disclosure, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or a communication; it can be a direct connection, or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present disclosure can be understood according to specific circumstances.

[0147] In the present disclosure, unless otherwise clearly specified and limited, a first feature being “above” or “below” a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being “above”, “above”, and “above” a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being “below”, “below”, and “below” a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0148] The disclosure above provides many different embodiments or examples to implement different structures of the present disclosure. In order to simplify the present disclosure, the components and settings of specific examples are described above. Of course, they are only examples, and the purpose is not to limit the present disclosure. In addition, the present disclosure can repeat reference numbers and / or reference letters in different examples, and this repetition is for the purpose of simplification and clarity, which itself does not indicate the relationship between the various embodiments and / or settings discussed.

[0149] The above are only specific embodiments of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any technician familiar with the technical field can easily think of various changes or substitutions within the technical scope disclosed in the present disclosure, which should be included in the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be based on the protection scope of the claims.

Claims

1. A display device, characterized in that: The display device comprises: A first substrate, comprising a display area and a frame area outside the display area, the first substrate comprising a first substrate and a photosensitive thin film transistor located on a display side of the first substrate facing the display device, the photosensitive thin film transistor being located in the frame area, the photosensitive thin film transistor comprising a first active layer, a first electrode and a second electrode, the first electrode and the second electrode being electrically connected to the first active layer, the first electrode being provided with a first voltage signal, and the first active layer being capable of receiving ambient light; A first detection module is connected to the second electrode, and the first detection module is used to detect a first leakage current generated by the second electrode and determine the ambient light color temperature and / or ambient light intensity according to the first leakage current.

2. The display device according to claim 1, characterized in that The display device also includes a reference thin film transistor arranged in the same layer as the photosensitive thin film transistor, and the display device also includes a light-shielding layer located on the display side of the reference thin film transistor facing the display device, the orthographic projection of the second active layer of the reference thin film transistor on the first substrate is located within the orthographic projection of the light-shielding layer on the first substrate, the third electrode of the reference thin film transistor is provided with a first voltage signal, the first detection module is also connected to the fourth electrode of the reference thin film transistor, and the first detection module is also used to detect a reference leakage current of the fourth electrode of the reference thin film transistor, and determine the ambient light color temperature and / or ambient light intensity based on the first leakage current and the reference leakage current.

3. The display device according to claim 1, characterized in that The display device further comprises a color filter layer, the color filter layer comprises a preset color filter, the preset color filter is located on a side of the photosensitive thin film transistor facing the ambient light, an orthographic projection of a first active layer of the photosensitive thin film transistor on the first substrate is located within an orthographic projection of the preset color filter on the first substrate, the photosensitive thin film transistor comprises a first photosensitive thin film transistor, a second photosensitive thin film transistor and a third photosensitive thin film transistor, and the preset color filters comprise a red color filter, a green color filter and a blue color filter; The first detection module is connected to the second electrode of the first photosensitive thin film transistor, the second electrode of the second photosensitive thin film transistor and the second electrode of the third photosensitive thin film transistor respectively. The first detection module is used to detect three first leakage currents generated by the three second electrodes and determine the color temperature of the ambient light based on the three first leakage currents.

4. The display device according to claim 1, characterized in that The display device further includes a color filter layer, the color filter layer includes a preset color filter, the preset color filter is located on the side of the photosensitive thin film transistor facing the ambient light, the orthographic projection of the first active layer of the photosensitive thin film transistor on the first substrate is located within the orthographic projection of the preset color filter on the first substrate, and the preset color filter includes a green color filter; The first detection module is used to detect a first leakage current of the second electrode of the photosensitive thin film transistor, and determine the ambient light intensity according to the first leakage current of the second electrode of the photosensitive thin film transistor.

5. The display device according to claim 1, characterized in that The frame area includes a first frame area and a second frame area located on opposite sides of the display area. The first frame area includes a fan-shaped routing area and a binding area. The fan-shaped routing area is located between the display area and the binding area. The photosensitive thin film transistor is located in the second frame area.

6. The display device according to claim 5, characterized in that: The first substrate comprises a first row of binding pins and a second row of binding pins located in the binding area, the first row of binding pins and the second row of binding pins are arranged along a direction from the fan-shaped routing area toward the binding area, and the first row of binding pins is divided into a middle area and end areas located at both ends of the middle area; The binding pins in the middle area are connected to the first metal routing in the fan-shaped routing area. The display device also includes a second metal routing arranged in the fan-shaped routing area and the binding area. A third metal routing is arranged between the first row of binding pins and the second row of binding pins. The binding pins in at least one end area are connected to one end of the third metal routing. The other end of the third metal routing extends in a direction away from the middle area and is connected to the second metal routing through a via. The first metal routing and the second metal routing are located in the same layer, and the third metal routing and the second metal routing are located in different layers.

7. The display device according to claim 6, characterized in that: The first substrate further includes a functional unit, the functional unit is located in the second border area, a plurality of the photosensitive thin film transistors are arranged in sequence along the extension direction of the second border area, and the functional unit is located between the photosensitive thin film transistor and the display area; The display device also includes an ink layer located in the second border area, the second border area is provided with an ink avoidance area, and the orthographic projection of the first active layer of the photosensitive thin film transistor on the first substrate is located within the orthographic projection of the ink avoidance area on the first substrate.

8. The display device according to claim 5, characterized in that The distance between the center of the photosensitive thin film transistor and the boundary of the display area close to the second frame area is 0.08 mm to 0.12 mm.

9. The display device according to claim 8, characterized in that: The first substrate further includes a functional unit, which includes a touch control unit, a data control unit and an anti-static unit, and the anti-static unit is located on a side of the fan-shaped wiring area close to the display area; The first substrate includes a first row of binding pins and a second row of binding pins located in the binding area, the first row of binding pins and the second row of binding pins are arranged in a direction from the fan-shaped routing area toward the binding area, and the touch control unit and the data control unit are located between the first row of binding pins and the second row of binding pins.

10. The display device according to claim 1, characterized in that: The photosensitive thin film transistor includes a plurality of sub-photosensitive thin film transistors, which are arranged in sequence along a first direction. The sub-photosensitive thin film transistor includes a first sub-pole and a second sub-pole, the first pole includes a plurality of first sub-poles connected to each other, the second pole includes a plurality of second sub-poles connected to each other, the first active layer extends along the first direction, and the orthographic projections of the first sub-pole and the second sub-pole on the first substrate are both located within the orthographic projection of the first active layer on the first substrate.

11. The display device according to claim 10, characterized in that: The display device also includes a light-shielding layer located on the display side of the photosensitive thin-film transistor facing the display device, the light-shielding layer is provided with an opening, the orthographic projection of the opening on the first substrate is located within the orthographic projection of the first active layer on the first substrate, and the sub-photosensitive thin-film transistor receives ambient light through the opening.

12. The display device according to claim 11, characterized in that: The display device further comprises a preset color filter located on the display side of the photosensitive thin film transistor facing the display device, and the orthographic projection of the opening on the first substrate is located within the orthographic projection of the preset color filter on the first substrate.

13. The display device according to claim 12, characterized in that: The orthographic projection of the first active layer on the first substrate is located within the orthographic projection of the preset color filter on the first substrate, and the distance between the orthographic projection boundary of the first active layer on the first substrate and the orthographic projection boundary of the preset color filter on the first substrate is greater than or equal to 5 μm.

14. The display device according to claim 11, characterized in that: The first sub-poles of two adjacent sub-photosensitive thin-film transistors are adjacent to each other, the opening extends along the first direction, each of the sub-photosensitive thin-film transistors receives ambient light through the opening, and the distance between the orthographic projection boundary of the opening on the first substrate and the orthographic projection boundary of the first active layer on the first substrate is greater than or equal to 10μm.

15. The display device according to claim 11, characterized in that: The number of the openings is the same as the number of the sub-photosensitive thin-film transistors, and the plurality of openings are arranged at intervals along the first direction. The openings correspond to the sub-photosensitive thin-film transistors one-to-one, and the sub-photosensitive thin-film transistors receive ambient light through the corresponding openings. The ratio of the size of the opening in the first direction to the spacing between two adjacent openings is less than or equal to 0.

5.

16. The display device according to claim 1, characterized in that: The first substrate further includes a second thin film transistor located in the display area, and the photosensitive thin film transistor is arranged in the same layer as the second thin film transistor.

17. The display device according to claim 2, characterized in that: The photosensitive thin film transistor may further include a first gate, the first gate is located between the first active layer and the first substrate, a gate insulating layer is provided between the first gate and the first active layer, an orthographic projection of the first active layer on the first substrate is located within an orthographic projection of the first gate on the first substrate, and a turn-off signal is applied to the first gate so that the first electrode and the second electrode of the photosensitive thin film transistor are disconnected when there is no ambient light irradiation; The reference thin film transistor also includes a second gate, which is located between the second active layer and the first substrate, a gate insulating layer is arranged between the second gate and the second active layer, the orthographic projection of the second active layer on the first substrate is located within the orthographic projection of the second gate on the first substrate, and a shutdown signal is applied to the second gate so that the third electrode and the fourth electrode of the reference thin film transistor are disconnected when there is no ambient light.

18. A method for detecting ambient light of a display device, characterized in that: The display device according to any one of claims 1 to 17, wherein the method comprises: Detecting a first leakage current of a second electrode of a photosensitive thin film transistor in the display device; The color temperature of the ambient light and / or the intensity of the ambient light are determined according to the first leakage current.

19. The method according to claim 18, characterized in that Also includes: detecting a reference leakage current of a second electrode of a reference thin film transistor; Determining the color temperature and / or intensity of ambient light according to the first leakage current includes: determining the color temperature and / or intensity of ambient light according to the first leakage current and the reference leakage current.

20. The method according to claim 18, characterized in that The photosensitive thin film transistor comprises a first photosensitive thin film transistor, a second photosensitive thin film transistor and a third photosensitive thin film transistor; Detecting a first leakage current of a second electrode of a photosensitive thin film transistor in the display device, comprising: respectively detecting three first leakage currents of a second electrode of a first photosensitive thin film transistor, a second electrode of the second photosensitive thin film transistor, and a second electrode of a third photosensitive thin film transistor; Determining the ambient light color temperature according to the first leakage current includes: determining the ambient light color temperature from a leakage current-color temperature data table according to the three first leakage currents, wherein the leakage current-color temperature data table includes correspondences between the three first leakage currents and the color temperatures.

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